JP2002305326A - ZnTe-BASED COMPOUND SEMICONDUCTOR AND ITS MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an n-type ZnTe-based com pound semiconductor that is effective to obtain a semiconductor device having excellent characteristics and has high carrier concentration and low resistance, to provide a ZnTe-based compound semiconductor manufactured by the method, and to provide the semiconductor device using the ZnTe-based compound semi conductor. SOLUTION: In growing the ZnTe-based compound semiconductor epitaxially on a substrate, first and second dopants are implanted in a ZnTe-based compound crystal so that the number of atoms in the second dopant becomes smaller than that in the first one. In this case, the first dopant controls a conductivity type to a first conductivity type such as an n type. The second dopant controls the conductivity type to a second conductivity type such as a p type that differs from the first one.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a ZnTe-based compound semiconductor suitable for a material of a semiconductor device, and a method for manufacturing the same.
The present invention relates to a Te-based compound semiconductor and a semiconductor device.

[0002]

2. Description of the Related Art At present, a ZnTe-based compound semiconductor is expected as a material that can be used for a green light emitting element such as a light emitting diode. However, since it is difficult to control the conduction type of a II-VI compound semiconductor required for manufacturing a light-emitting diode, materials that can be used for the light-emitting diode are limited.

For example, a pn junction diode has been manufactured using a ZnSe-based compound semiconductor crystal in which several layers of ZnSe-based mixed crystal thin films are grown on a GaAs substrate by a molecular beam epitaxial growth method. At this time, ZnSe
Since it is considered that it is difficult to control a p-type semiconductor in a thermal equilibrium state, a system compound semiconductor is formed using a special device called a radical particle beam source. But,
The p-type ZnSe-based compound semiconductor obtained by this method had a low dopant activation rate and did not become a low-resistance crystal.

On the other hand, in the case of a ZnTe-based material, a p-type semiconductor can be easily achieved, but there is a problem that an n-type semiconductor has a low carrier concentration and does not have low resistance. That is, generally, in a ZnTe-based compound semiconductor, a molecular beam epitaxy (MBE) or a metal organic chemical vapor deposition (MO) is used.
It is known that an n-type semiconductor can be obtained by doping a group III element Al, Ga, In into a ZnTe-based compound crystal using an epitaxial growth technique such as CVD). Was poor, so that an n-type semiconductor could not be obtained. In recent years, it has become possible to achieve an n-type semiconductor by increasing the purity of the raw material and improving the epitaxial growth technique. However, increasing the amount of dopant increases the self-compensation effect. However, the carrier concentration decreases, and the problem of lowering the resistance has not been solved.

For example, an n-type ZnTe compound semiconductor is referred to as MB
The carrier concentration in the case of doping with Cl by the E method is up to 3 × 10 ¹⁶ cm ⁻³ ,
The carrier concentration in the case of doping with 1 is ~ 4.
× 10 ¹⁷ cm ⁻³ . As described above, when doping is performed so as not to affect the crystallinity, the carrier concentration is limited to 10 ¹⁷ cm ^−3, but a carrier concentration of 10 ¹⁸ cm ⁻³ or more is required for manufacturing a semiconductor device. In addition, since the n-type ZnTe compound semiconductor obtained at present has a low carrier concentration, the resistance does not become low and a semiconductor device having good characteristics cannot be obtained.

[0006] In addition, no experiment has been conducted on conductivity control of a heterostructure material required for manufacturing a semiconductor device. Under such circumstances, a light emitting diode using a II-VI group compound semiconductor other than a ZnSe-based compound semiconductor has not been put to practical use at present.

[0007] In recent years, a technique for controlling the conductivity of a semiconductor by simultaneous doping has been proposed.
The effect has been confirmed with O-based materials (NEW DIAMON
D 60th vol.17 No.1 p18-23).

[0008] The co-doping method is to obtain a semiconductor of a desired conductivity type by adding a second dopant for obtaining another conductivity together with a first dopant for obtaining the conductivity. Is a method of introducing about half of the amount into the crystal. According to this method, the level of the dopant in the forbidden band becomes shallow and the carrier concentration can be increased.

In general, when a dopant is added to a crystal at a high concentration, the amount of the dopant which melts into the crystal due to the repulsive force between the dopants is limited. Since the repulsive force between the dopants is alleviated, the amount of the dopant that melts into the crystal can be increased, and a crystal having lower resistance can be obtained.

The first dopant emits carriers and is ionized. However, since the second dopant screens the Coulomb field in the crystal, carrier scattering is suppressed. Therefore, the dopant can be added at a high concentration without lowering the carrier mobility, and a low-resistance semiconductor crystal can be obtained.

As described above, it is theoretically expected that a low resistance of a semiconductor crystal can be realized by the simultaneous doping method.

Here, a demonstration experiment of the simultaneous doping method performed on the GaN compound semiconductor will be briefly described.

Conventionally, it has been difficult to form a p-type semiconductor of a GaN compound. That is, in general, Mg is introduced as a p-type dopant in a GaN compound semiconductor, but Mg has a relatively high level in the forbidden band and is low because the holes are not sufficiently activated at room temperature as can be seen from the Fermi-Dirac statistics. It was difficult to obtain a p-type semiconductor having resistance.

On the other hand, according to the calculation based on the theory of the simultaneous doping method, in order to obtain a low-resistance p-type GaN compound semiconductor, about half of Mg is doped with oxygen which can be an n-type dopant together with p-type dopant Mg. Was expected to be effective. Then, as a result of simultaneously doping the dopant by MOCVD, it was observed that the carrier concentration increased by about two orders of magnitude. In addition, no decrease in carrier mobility was observed.

Thus, the theory of the co-doping method for the GaN compound semiconductor has been proved, and it has been confirmed that the method is effective for obtaining a low-resistance semiconductor.

[0016]

However, the above-described co-doping method has not been theoretically studied or tested for ZnTe-based compound semiconductors. for that reason,
In fact, it has not yet been possible to obtain a sufficiently low-resistance semiconductor by controlling the conductivity of a ZnTe-based compound semiconductor.

The present invention provides an n-type Z-type semiconductor having a high carrier concentration and a low resistance, which is effective for obtaining a semiconductor device having good characteristics.
Method for manufacturing nTe-based compound semiconductor, ZnTe-based compound semiconductor manufactured by the manufacturing method, and Zn
It is an object to provide a semiconductor device using a Te-based compound semiconductor.

[0018]

SUMMARY OF THE INVENTION The present invention has been made to achieve the above-mentioned object, and is intended to provide a method for epitaxially growing a ZnTe-based compound semiconductor on a substrate.
In the e-based compound crystal, a first dopant controlling the conductivity type to the first conductivity type and a second dopant controlling the conductivity type to a second conductivity type different from the first conductivity type, This is a method for manufacturing a ZnTe-based compound semiconductor in which doping is performed such that the number of atoms of the second dopant is smaller than the number of atoms of the first dopant. Note that the ZnTe-based compound is a group 12 (2B) element Z
It means that the compound contains at least one of Te, which is an n or 16 (6B) group element, and is a compound lattice-matched with ZnTe.

By the above-described method of simultaneously doping the crystal with the two dopants (simultaneous doping method), Z
It is possible to relatively easily control the conductivity type of the nTe-based compound semiconductor. In other words, according to the simultaneous doping method, the activation rate of the dopant (the rate at which the doped dopant is effectively activated as a carrier) increases.
A desired carrier concentration can be achieved with a small doping amount as compared with the related art, and the crystallinity of the obtained crystal is improved.

In particular, the first conductivity type is n-type and the second conductivity type is n-type.
Is effective when applied to a case where an n-type ZnTe-based compound semiconductor is manufactured, where the conductivity type is p-type.

Specifically, the first dopant is 13
(3B) group element, and the second dopant is 15 (5
Group B). For example, the group 13 (3B) element includes at least one of Al, Ga, and In, and the group 15 (5B) element includes at least one of N, P, and As. In other words, the group 13 (3B) element may include at least one element of Al, Ga, and In, and for example, Al and Ga may be doped together. In this case, the doping amount of the 15 (5B) group element depends on the number of Al atoms of the 13 (3B) group to be doped and G
a The number of atoms is smaller than the number obtained by adding the number of atoms. It is to be noted that the doping of the group 15 (5B) element is not limited to one of N, P, and As, as long as the number of atoms to be doped is smaller than the number of atoms of the group 13 (3B) element. May be.

The first dopant is 17 (7
A similar effect can be obtained when the second dopant is a Group 1 element and a second dopant is a Group 1 (1A) element. In this case, the group 17 (7B) element includes at least one of Cl, Br, and I, and the group 1 (1A) element includes at least Li.

Further, the first and second dopants are both 14 (4B) group elements, the first dopant contains at least C, and the second dopant is S
At least one of i and Ge may be included. The group IV element can control the conductivity type of the ZnTe-based compound semiconductor to n-type or p-type depending on the occupied atomic position.
Si and Ge easily enter the atomic position of Zn and make the conductivity type of the ZnTe-based compound semiconductor n-type, while C easily enter the atomic position of Te and make the conductivity type of the ZnTe-based compound semiconductor p-type.

When a ZnTe-based compound semiconductor is formed, the substrate is preferably made of ZnTe crystal. In this case, it is preferable to grow a ZnTe-based compound crystal that lattice-matches with the ZnTe substrate. Note that the lattice matching condition is set to 0.
It is desirable to be within 5%, preferably within 0.2%. For example, ZnTe, ZnMgSeTe, CdSeTe, Cd
By growing any one of ZnSeTe, BeMgTe, and BeZnMgTe on a ZnTe substrate, a high-quality crystal can be grown.

When a semiconductor device is manufactured using a ZnTe substrate and a non-lattice-matched compound semiconductor, the photoelectric conversion efficiency decreases due to leak current due to the growth of defects during use of the semiconductor device, or the lifetime due to the growth of defects increases. The effect of co-doping is diminished because of the possibility of lowering.

The above-described simultaneous doping method can be realized by an epitaxial growth technique.
MOCVD or VPE, which is a molecular beam epitaxy method (MBE) or a chemical vapor deposition method, is suitable.

Further, a carrier concentration of 1 × ¹⁰ 17 ^{cm -3} or more by co-doping method described above, and is the carrier mobility is 300 cm ² / Vsec or more ZnTe
A compound semiconductor can be obtained. Further, the carrier concentration is 1 × 10 ¹⁸ cm by the simultaneous doping method described above.
⁻³ or more, and the carrier mobility is 130 cm ² / Vs
A ZnTe-based compound semiconductor having an ec or more can be obtained. Further, these ZnTe-based compound semiconductors have a resistance value of 0.5 Ω · m or less.

As a result, a low-resistance n-type semiconductor can be realized, and can be used as a semiconductor device material. In addition, in the simultaneous doping method, the activation rate of the dopant is high, so that the doping amount can be suppressed to a small amount as compared with the conventional method. Therefore, the obtained ZnTe-based compound semiconductor has excellent crystallinity and is suitable as a semiconductor device material. is there.

Further, according to the semiconductor device having the n-type ZnTe-based compound semiconductor as a substrate, since the activation rate of the dopant is high, there is no formation of a deep level or the like due to the non-activated dopant, so that the photoelectric conversion with high quantum efficiency is achieved. Not only is obtained, but also the contact resistance with the n-type electrode is reduced, so that the heat generation due to the operating voltage can be reduced, and a longer life of the semiconductor device can be expected.

Hereinafter, the present invention will be described in detail. Conventionally, in order to obtain an n-type semiconductor layer of a ZnTe compound, Al, Ga, In, or the like, which is a Group 13 (3B) element, is doped alone using an epitaxial growth technique such as MBE or MOCVD. However, when the doping amount of the dopant is increased, the self-compensation effect is increased. Therefore, a phenomenon was observed in which the carrier concentration did not increase or the carrier concentration decreased even when the doping amount was increased. When doping was performed so as not to affect the crystallinity, the carrier concentration was limited to 10 ¹⁷ cm ⁻³ .

On the other hand, using the co-doping method of the present invention, Zn
When Ga, In and N, P, As, which are 15 (5B) group elements, are simultaneously doped so that the number of atoms of the 15 (5B) group becomes about half the number of atoms of the 13 (3B) group, the carrier concentration is increased. The effect of improving was obtained. Note that 13
When the doping amount of the (3B) group element is 100, 1
Good results were obtained when the doping amount of the Group 5 (5B) element was 10 to 90.

In particular, when In is used as the 13 (3B) group element, the mobility of carriers does not decrease and no deep level is formed, so that the carrier concentration can be effectively increased. . This is because in the case of ZnTe, the covalent radius of the 15 (5B) group element that can be simultaneously doped is smaller than the covalent radius of Te, so that Al or Ga having a smaller covalent radius than Zn is doped at a high concentration. Then, it is considered that the strain increases. On the other hand, In has a covalent bond radius larger than that of Zn and relaxes the strain, so that the effect of simultaneous doping is considered to be obtained.

Further, Cl, B, which is a 17 (7B) group element,
When r and I are used as n-type dopants, 1 (1
The effect of simultaneous doping was obtained by using Li which is a group A element as a p-type dopant. However, 1
When, for example, Na was used as a p-type dopant other than Li as the (1A) group element, the effect of simultaneous doping was not obtained. This is considered to be because Na has high ionicity and does not work effectively as a simultaneous dopant. In addition, 1
When the doping amount of Li is set to 10 to 90 when the doping amount of the Group 7 (7B) element is set to 100, 17
An n-type semiconductor having a higher carrier concentration than that obtained by doping the group 7B element alone was obtained.

When the 14 (4B) group is used as the dopant, Si and Ge easily enter the atomic position of Zn and make the conductivity type of the semiconductor n-type, and C enters the atomic position of Te and change the conductivity type to p-type. Therefore, the effect of simultaneous doping was obtained by using Si and Ge as n-type dopants and C as a p-type dopant. When the doping amount of C is 10 to 90 when the doping amount of at least one element of Si or Ge is 100,
An n-type semiconductor having a high carrier concentration was obtained.

As a method for epitaxially growing a ZnTe compound semiconductor crystal, MBE, MOCVD, L
Simultaneous doping can be realized by using PE,
In each case, the co-doping effect was obtained. Especially M
Good results have been obtained using OCVD. It is considered that this is because the MOCVD method has excellent controllability of the dopant amount, and the growth temperature can be set relatively high, so that the dopant can sufficiently move on the substrate and easily enter a stable site. The growth temperature for epitaxially growing a ZnTe compound semiconductor crystal is 3
50 ° C. or higher is desirable.

The above-described co-doping method uses ZnT
Not limited to e-compound semiconductors, ZnT on ZnTe substrate
ZnMgSeTe, CdSe that are lattice-matched to e
Te, CdZnSeTe, BeMgTe, BeZnMg
It is also effective when forming Te, and the carrier concentration can be increased as compared with the case where a single dopant is used.

In producing a ZnTe-based compound semiconductor, for example, when a III-V compound-based substrate such as a GaAs substrate or an oxide-based substrate such as a sapphire substrate is used, or when a ZnTe-based compound to be grown is used. Heterogeneous I
When an I-VI group substrate is used, the effect of simultaneous doping can be obtained, but it is difficult to obtain a highly reliable device because lattice mismatch occurs.

[0038]

(Embodiment 1) In this embodiment, a p-type Z
In this example, when an ZnTe compound semiconductor is epitaxially grown by MOCVD using nTe crystal as a substrate, In is used as an n-type dopant, P is used as a p-type dopant, and these dopants are simultaneously doped to form an n-type semiconductor.

First, a ZnTe buffer layer was formed on a p-type ZnTe substrate. At this time, TMZn (trimethylzinc) was used as a Zn source as a semiconductor raw material, and TETe triethyltellurium) was used as a Te source.

Next, an n-type ZnTe compound semiconductor layer was formed on the ZnTe buffer layer by simultaneously doping In and P. At this time, TM is used as the n-type dopant source.
In (trimethyl indium) was used, and PH ₃ was used as a p-type dopant source. Note that the doping amount of In was set so that the carrier concentration in the crystal became 10 ¹⁹ cm ⁻³ , and the doping amount of P was set to approximately half the amount of In.

An n-type ZnTe compound semiconductor layer having a thickness of 1 μm
After the epitaxial growth, the carrier was taken out of the crystal growth apparatus and the carrier concentration was measured by the van deapo method. As a result, an n-type carrier concentration of ５5 × 10 ¹⁸ cm ⁻³ was obtained. The carrier mobility is 200 cm ² / V
sec, which was a sufficiently high value.

SIMS (secondary ion mass spectrometer)
As a result of measuring the dopant concentration in the crystal, the In concentration was 10 ¹⁹ cm ⁻³ and the P concentration was 30 to 40% of the In concentration.
%.

For comparison, In as an n-type dopant,
The same measurement was performed on a ZnTe compound semiconductor manufactured by doping singly, and the n-type carrier concentration was 10 ¹⁶ cm ⁻³ and the mobility was 10 cm ² /
Vsec was low.

When the concentration of P at the time of simultaneous doping is set to about 1% of the In concentration, the carrier concentration is
It remained low at 0 ¹⁶ cm ^-3 .

Embodiment 2 In this embodiment, when a ZnTe compound semiconductor is epitaxially grown by MBE using a p-type ZnTe crystal as a substrate, Cl is used as an n-type dopant, and Li is used as a p-type dopant. Is simultaneously doped to form an n-type semiconductor.

First, a ZnTe buffer layer was formed on a p-type ZnTe substrate. At this time, a high-purity Zn metal was used as a Zn source as a semiconductor raw material, and a high-purity Te metal was used as a Te source.

Next, an n-type ZnTe compound semiconductor layer was formed on the ZnTe buffer layer by simultaneously doping Cl and Li. At this time, as the n-type dopant source, Z
nCl ₂ was used. The doping amount of Cl is such that the carrier concentration in the crystal becomes -10 ¹⁹ cm ^-3 and L
The doping amount of i was about half the amount of Cl.

An n-type ZnTe compound semiconductor layer having a thickness of 1 μm
After the epitaxial growth, the carrier was taken out of the crystal growth apparatus and the carrier concentration was measured by the van deapo method. As a result, an n-type carrier concentration of ５5 × 10 ¹⁸ cm ⁻³ was obtained. The carrier mobility is 250 cm ² / V
sec, which was a sufficiently high value.

The dopant concentration in the crystal by SIMS
As a result of the measurement, ¹⁹cm^-3And L
Confirm that the i concentration is 60-70% of the Cl concentration
Was.

For comparison, Cl is used as an n-type dopant.
The same measurement was performed on a ZnTe compound semiconductor manufactured by doping singly, the n-type carrier concentration was up to 5 × 10 ¹⁶ cm ⁻³ and the mobility was also 10 cm.
² / Vsec. When the substrate was evaluated by photoluminescence, a broad deep level was formed on the long wavelength side. In the co-doped sample, emission from a deep level was hardly observed.

Embodiment 3 In this embodiment, when a ZnTe-based compound semiconductor is epitaxially grown by MOCVD using a p-type ZnTe crystal as a substrate, In is used as an n-type dopant, and N is used as a p-type dopant.
In this example, an n-type semiconductor is formed by simultaneously doping these dopants.

First, a p-type ZnTe buffer layer was formed on a p-type ZnTe substrate by doping N as a p-type dopant. Further, N is doped as a p-type dopant to form p-type ZnMgSeT on the p-type ZnTe buffer layer.
An e-clad layer was formed. At this time, TMZn (trimethylzinc) was used as a Zn source as a semiconductor material, and T
H ₂ Te was used as an e source. Further, NH ₃ was used as an N source as a p-type dopant.

Thereafter, an undoped CdZnSeTe active layer was grown on the p-type ZnMgSeTe cladding layer.

Next, an n-type ZnMgSeTe cladding layer was formed on the CdZnSeTe active layer by simultaneously doping In and N. Furthermore, simultaneous doping was performed to form an n-type ZnTe contact layer on the ZnMgSeTe cladding layer, thereby producing a ZnTe-based compound semiconductor.
Note that the doping amount of N was set to about half the amount of In.

The carrier concentration of the n-type ZnMgSeTe cladding layer in the obtained ZnTe-based compound semiconductor is 7 ×.
A 10 ¹⁷ cm ^-3, the carrier concentration of the n-type ZnTe contact layer was 5 × ¹⁰ 18 ^{cm -3.}

Thereafter, a gold electrode is formed on the ZnTe substrate side, and W (tungsten) is formed on the n-type ZnTe contact layer side.
An electrode was formed to produce a light emitting diode.

The light-emitting diode was energized to evaluate the light-emitting characteristics. As a result, high-luminance green light was observed at an operating voltage of 2.5 V. Further, since the contact resistance between the n-type ZnTe contact layer and the W electrode is reduced, heat generation can be reduced, and a long life can be expected.

For comparison, In as an n-type dopant, In
Doped alone to form an n-type semiconductor layer
In the e-type compound semiconductor, the carrier concentration of the n-type semiconductor layer was measured to be 10 ¹⁶ cm ⁻³ . Further, in the light emitting diode manufactured using this ZnTe-based compound semiconductor, the operating voltage was as high as 5 V, and light emission from a deep level was observed, and the light emission efficiency was reduced. Also, n
Deterioration due to heat generation was observed in the electrode portion on the side of the type ZnTe contact layer, and a long-life element could not be obtained.

As described above, the invention made by the inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above embodiments. For example, the combination of dopants used for co-doping is 13 (3B)
An n-type dopant containing at least one of Al, Ga, and In that is a group 15 element, and N, P, and a group 15 (5B) element.
It may be a combination of p-type dopants containing at least one of As. In addition, C that is a group 17 (7B) element
A combination of an n-type dopant containing at least one of l, Br, and I and a p-type dopant made of Li which is a 1 (1A) group element may be used. Further, a combination of an n-type dopant made of Si and Ge and a p-type dopant made of C may be used.

In this embodiment, the amount of the p-type dopant used for the simultaneous doping is set to about half the amount of the n-type dopant.
When the value is 0, the doping amount of the p-type dopant is 10 to 10.
It may be adjusted in the range of 90. The growth temperature for epitaxially growing the ZnTe compound semiconductor crystal is desirably 350 ° C. or higher.

In addition to the ZnTe compound semiconductor and ZnMgSeTe compound semiconductor described in this embodiment,
CdSeTe, CdZnS, which are lattice matched to Te
The present invention can also be applied to the case of forming an n-type semiconductor of eTe, BeMgTe, BeZnMgTe.

[0062]

According to the present invention, a first dopant for controlling the conductivity type to the first conductivity type and a second dopant for controlling the conductivity type to the second conductivity type different from the first conductivity type are provided. Is formed so as to form a ZnTe-based compound semiconductor by a simultaneous doping method in which the number of atoms of the second dopant is smaller than the number of atoms of the first dopant. Has the effect that the conductivity type can be controlled relatively easily.

In particular, the first conductivity type is n-type and the second conductivity type is n-type.
Is effective when applied to a case where an n-type ZnTe-based compound semiconductor is manufactured, where the conductivity type is p-type.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kenji Sato 3--17-3 Nishinaminami, Toda City, Saitama Prefecture Inside the Nikko Materials Toda Factory (72) Inventor Tomoaki Asahi 3-17 Niisaminami, Toda City, Saitama Prefecture No. 35 F-term in Nikko Materials Toda Factory (reference) 5F041 AA44 CA41 CA49 CA57 CA65 CA83 5F045 AA04 AA05 AB22 AC19 CA10 DA52 DA57 DA60

Claims (14)

[Claims] When a ZnTe-based compound semiconductor is epitaxially grown on a substrate, a first dopant for controlling a conductivity type to a first conductivity type and a conductivity type of the first conductivity type are set in a ZnTe-based compound crystal. And doping with a second dopant controlled to a second conductivity type different from that of the first dopant so that the number of atoms of the second dopant is smaller than the number of atoms of the first dopant.
A method for producing a Te-based compound semiconductor. 2. The method according to claim 1, wherein the first conductivity type is an n-type, and the second conductivity type is a p-type. 3. The ZnTe-based compound semiconductor according to claim 2, wherein the first dopant is a group 13 (3B) element, and the second dopant is a group 15 (5B) element. Production method. 4. The group 13 (3B) element is Al, Ga,
15 (5B) containing at least one of In
4. The method according to claim 3, wherein the group III element includes at least one of N, P, and As. 5. The ZnTe-based compound semiconductor according to claim 2, wherein the first dopant is a group 17 (7B) element and the second dopant is a group 1 (1A) element. Production method. 6. The 17 (7B) group element is Cl, Br,
The method for producing a ZnTe-based compound semiconductor according to claim 5, wherein at least one of I is included, and the 1 (1A) group element includes at least Li. 7. The first and second dopants are both Group 4 (4B) elements, and the first dopant is S
3. The method of claim 2, wherein the second dopant contains at least one of i and Ge, and the second dopant contains at least C. 4. 8. The ZnT according to claim 1, wherein the substrate is a ZnTe crystal.
A method for producing an e-based compound semiconductor. 9. The method according to claim 1, wherein the ZnTe-based compound semiconductor is ZnT.
e, ZnMgSeTe, CdSeTe, CdZnSeT
The method for producing a ZnTe-based compound semiconductor according to any one of claims 1 to 8, wherein the method is any one of e, BeMgTe, and BeZnMgTe. 10. The ZnTe-based compound semiconductor is Zn
The method for producing a ZnTe-based compound semiconductor according to any one of claims 1 to 9, wherein the ZnTe-based compound semiconductor is formed on a Te substrate by a molecular beam epitaxy method or a metal organic chemical vapor deposition method. 11. An n-type ZnTe-based compound semiconductor obtained by the method according to claim 1, wherein the carrier concentration is 1 × 10 ¹⁷ cm ⁻³ or more and the carrier mobility is 11. Is not less than 300 cm ² / Vsec. 12. An n-type ZnTe-based compound semiconductor obtained by the method according to claim 1, wherein the carrier concentration is 1 × 10 ¹⁸ cm ⁻³ or more, and the carrier mobility is 12. Is not less than 130 cm ² / Vsec. 13. The Zn according to claim 11, wherein the resistance is 0.05 Ω · m or less.
Te-based compound semiconductor. 14. A semiconductor device comprising the ZnTe-based compound semiconductor according to claim 11 as a substrate.