JP2002299787A - High-frequency circuit structure and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a low-loss high-frequency circuit structure, capable of obtaining the intrinsic characteristics of an integrated circuit, to which a flip- chip is mounted, and to provide its manufacturing method. SOLUTION: In a flip-chip mounted part of an integrated circuit chip 109, as a though-hole 106 is formed in a board 101 and a dielectric film 103 corresponding to a circuit pattern region 109b of the integrated circuit chip 109, the bard 101 and the dielectric film 103 are not present on the circuit pattern region 109b. Furthermore, when a sealant 203 is injected into the jointing part of a projection electrode 108 to a signal wire 105, it will not infiltrate into the circuit pattern region 109b.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit structure used for manufacturing a circuit board and the like, and a method of manufacturing the same.

[0002]

2. Description of the Related Art Hitherto, various methods for forming a high-frequency circuit have been proposed. For example, Japanese Patent Application Laid-Open No. 2000-124564 discloses forming a signal wiring on a thin film structure in order to realize a low-loss circuit in a high-frequency circuit. FIG. 6 is a sectional view showing a conventional high-frequency circuit. First, as shown in FIG. 6A, in a conventional high-frequency circuit, a dielectric film 2 is provided on a substrate 1, and a signal wiring 3 and a ground conductor 4 are formed on the dielectric film 2, respectively. I have. In addition, the substrate 1 corresponding to the wiring pattern region of the signal wiring 3 is removed by etching to form a hole region 7. Further, a cover member 6 is put on a portion corresponding to the wiring pattern region of the signal wiring 3 to form a shield structure. The cover member 6 is formed by forming a recess in a portion corresponding to the wiring pattern region of the signal wiring 3 and forming the metal layer 5 by sputtering, plating, or the like. In such a structure, the lines of electric force pass through the air layer 8, so that the loss can be reduced.

On the other hand, in manufacturing a circuit board, it is necessary to mount a chip-shaped integrated circuit on the board by some mounting method. One of the mounting methods is a flip chip. In flip-chip mounting, a chip-shaped integrated circuit is connected face-down to a substrate. Compared to the mounting method of bonding chip-shaped integrated circuits using wires, flip-chip mounting not only reduces the mounting area, but also eliminates the effect of wire inductance in high-frequency circuits, so that effective mounting is possible. It is expected as a method.

[0004]

When the chip-shaped integrated circuit 9 is flip-chip mounted as in the above-described conventional technique, there are the following problems.

FIG. 6B is a cross-sectional view showing flip-chip mounting in a conventional high-frequency circuit structure. FIG.
2B, the protruding electrode 11 is formed on the electrode 10 of the chip-shaped integrated circuit 9. The protruding electrodes 11 are joined to the signal wires 3 with the conductive paste 12 to obtain electrical continuity. Then, an insulating sealing material 13 is injected between the integrated circuit 9 and the dielectric film 2.

In general, the chip-shaped integrated circuit 9 is not manufactured on the assumption that it is mounted on a flip chip.
It is manufactured assuming face-up, that is, bonding (wire bonding) with wiring on a substrate using a wire such as gold with the wiring pattern surface of the chip-shaped integrated circuit 9 facing up.

Accordingly, the chip-shaped integrated circuit 9 is mounted on the substrate 1.
6 is flip-chip mounted, the substrate 1 and the dielectric film 2 are opposed to the wiring pattern surface 9a of the chip-shaped integrated circuit 9 as shown in FIG. 2 and the sealing material 13 that enters the gap between the chip-shaped integrated circuit 9 and the substrate 1, the desired characteristics of the original chip-shaped integrated circuit 9 cannot be obtained. There is.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and can obtain desired characteristics of an integrated circuit even when the integrated circuit is flip-chip mounted. It is an object to provide a functional high-frequency circuit structure and a method thereof.

[0009]

In order to solve this problem, in a flip chip mounting portion of an integrated circuit chip, a through hole is formed in a substrate and a dielectric film corresponding to a circuit pattern region of the integrated circuit chip. By keeping
When the integrated circuit chip is flip-chip mounted, the substrate and the dielectric film do not exist on the circuit pattern area,
When the sealing material is injected between the electrode of the integrated circuit and the substrate, the sealing material does not enter the circuit pattern region.

[0010] Accordingly, even when the integrated circuit chip is designed to obtain desired characteristics on the premise of face-up mounting, even when the integrated circuit chip is flip-chip mounted, the circuit is formed by the through hole. There is only air on the pattern area, and the design conditions can be made the same.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A high-frequency circuit structure according to a first aspect of the present invention comprises a substrate or a substrate on which signal wiring is formed, a dielectric film formed so as to cover a main surface of the substrate, A signal wiring formed in a desired wiring pattern on a partial region of the dielectric film, and a partial region of the substrate corresponding to a partial region of the dielectric film on which the signal wiring is formed And the substrate and the dielectric film penetrate into a region facing the circuit pattern region of the integrated circuit chip when the integrated circuit chip is flip-chip mounted on the main surface side of the substrate. And a through-hole formed so as to form a hole.

A high-frequency circuit structure according to a second aspect of the present invention includes a substrate or a substrate on which signal wiring is formed; a dielectric film formed on a main surface of the substrate; A signal wiring formed in a multilayer on a part of the region, and a void region formed in a part of the substrate corresponding to a part of the dielectric film on which the signal wiring is formed And a through-hole formed to penetrate the substrate and the dielectric film in a region facing the circuit pattern region of the integrated circuit chip when the integrated circuit chip is flip-chip mounted on the main surface side of the substrate. And a hole.

Further, the high-frequency circuit structure according to a third aspect of the present invention, in the first or second aspect, includes a shield member covered with the signal wiring to shield the signal wiring, and an opening of the through hole. And an integrated circuit chip that is flip-chip mounted on the main surface side of the substrate in a state where the circuit pattern region is positioned so as to face the portion.

With these configurations, even when the integrated circuit chip is designed to obtain desired characteristics on the premise of face-up mounting, even when the integrated circuit chip is flip-chip mounted, With the through holes penetrating the dielectric film, only air is present on the circuit pattern area, and the design conditions can be made the same. Also,
A hole region is formed in a partial region of the substrate, and the lines of electric force pass through an air layer provided by shielding signal wiring on the hole region, so that loss can be reduced. it can.

A high-frequency circuit structure according to a fourth aspect of the present invention is characterized in that, in any one of the first to third aspects, the dielectric film is formed of benzocyclobutene.

With this configuration, since benzocyclobutene has a small derivative loss, a high-frequency circuit with lower loss can be obtained, and benzocyclobutene can be formed into a film by spin coating and curing (curing). This is very effective for multilayering and miniaturizing a circuit.

According to a fifth aspect of the present invention, there is provided a method for manufacturing a high-frequency circuit structure, comprising: forming a dielectric film on a main surface of a substrate or a substrate on which signal wiring is formed; Forming a signal wiring with a desired wiring pattern on the area of the portion, and removing a part of a region of the substrate corresponding to a part of the dielectric film on which the signal wiring is formed and removing the space. Forming a hole region, and penetrating the substrate and the dielectric film in a region facing the circuit pattern region of the integrated circuit chip when the integrated circuit chip is flip-chip mounted on the main surface side of the substrate Forming a through hole as described above.

A method of manufacturing a high-frequency circuit structure according to a sixth aspect of the present invention includes the steps of: forming a dielectric film on a main surface of a substrate or a substrate on which signal wiring is formed; Forming a signal wiring in a desired wiring pattern on a partial area of the integrated circuit chip; and forming an area facing the circuit pattern area of the integrated circuit chip when the integrated circuit chip of the dielectric film is flip-chip mounted. Forming an opening by selectively etching the substrate, and selectively etching the substrate from the back side to form a substrate corresponding to a partial region of the dielectric film where the signal wiring is formed. A hole region is formed by removing a part of the region, and at the same time, a region corresponding to an opening formed in the dielectric film is removed to form a through hole so as to penetrate the substrate and the dielectric film. And the step, the comprises.

The high-frequency circuit structure manufactured by these methods can flip the integrated circuit chip even if the integrated circuit chip is designed to obtain desired characteristics on the premise of face-up mounting. Even when a chip is mounted, only the air is present on the circuit pattern region due to the through holes penetrating the substrate and the dielectric film, and the design conditions can be made the same. Further, a hole region is formed in a partial region of the substrate, and the lines of electric force pass through an air layer provided by shielding the signal wiring on the hole region, thereby reducing loss. be able to.

According to a seventh aspect of the present invention, in the method for manufacturing a high-frequency circuit structure according to the sixth aspect, after the dielectric film is etched to form an opening, the dielectric film including at least the opening is formed. Forming a protective layer on the surface of the substrate, disposing an electrode on the main surface side of the substrate, and selectively etching plasma from the back side by plasma etching. To prevent.

According to this method, even if the substrate is removed and the through hole is formed, the plasma does not reach the electrode because the protective layer is provided, so that the high frequency circuit structure having the through hole and the hole region can be easily formed. In addition, it can be manufactured without breaking the plasma etching apparatus.

In the method for manufacturing a high-frequency circuit structure according to an eighth aspect of the present invention, in the sixth or seventh aspect, the selective etching is performed using a resist film as a mask.

In the method for manufacturing a high-frequency circuit structure according to a ninth aspect of the present invention, in any one of the fifth to eighth aspects, the dielectric film is formed using benzocyclobutene.

According to this method, since benzocyclobutene has a small derivative loss, a high-frequency circuit with lower loss can be obtained, and benzocyclobutene can be formed into a film by spin coating and curing treatment (curing). This is very effective for multilayering and miniaturizing a circuit.

A tenth aspect of the present invention is a wireless terminal device having the high-frequency circuit structure according to any one of the first to fourth aspects.

An eleventh aspect of the present invention is a radio base station device having the high-frequency circuit structure according to any one of the first to fourth aspects.

A twelfth aspect of the present invention is a radar device having the high-frequency circuit structure according to any one of the first to fourth aspects.

According to a thirteenth aspect of the present invention, there is provided a wireless terminal device comprising a high-frequency circuit manufactured by using the method for manufacturing a high-frequency circuit structure according to any one of the fifth to ninth aspects. It is.

According to a fourteenth aspect of the present invention, there is provided a radio base station comprising a high-frequency circuit manufactured by using the high-frequency circuit structure manufacturing method according to any one of the fifth to ninth aspects. Device.

According to a fifteenth aspect of the present invention, there is provided a radar apparatus comprising a high-frequency circuit manufactured by using the high-frequency circuit structure manufacturing method according to any one of the fifth to ninth aspects. is there.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing a high-frequency circuit structure according to an embodiment of the present invention. A wiring pattern of a first signal wiring 102 is formed on a main surface 101a of a substrate 101 made of silicon. On the main surface 101a of the substrate 101 including the first signal wiring 102, a dielectric film 103 is formed as an interlayer insulating film.

In a part of the surface of the dielectric film 103, second signal wirings 105 and 112 are formed in a desired wiring pattern. Also, the second signal wiring 11
A hole region 107 is formed in the substrate 101 corresponding to a region (hereinafter, referred to as a wiring pattern region) 112a in which two wiring patterns are formed. Due to the void region 107, the second signal wiring 112 has a thin film structure formed on the dielectric film 103 without the substrate 101.

Further, a ground conductor 113 is formed so as to surround the wiring pattern region 112a. Further, a cover member 111 is placed over the wiring pattern area 112a. The cover member 111 includes a wiring pattern area 112.
A concave portion 111a is formed to provide a space region above a. A metal layer 110 is formed on the inner surface of the lid member 111 including the concave portion 111a by a sputtering method, plating, or the like. When the cover member 111 is covered, the metal layer 110 and the ground conductor 113 conduct with each other, thereby forming a shield structure for shielding the second signal wiring 112. By employing this shield structure, the lines of electric force pass through the space region, so that the loss can be reduced.

On the other hand, in other regions on the dielectric film 103,
A second signal wiring 105 is formed. The second signal wiring 105 is for inputting and outputting a signal to and from a chip-shaped integrated circuit (hereinafter, referred to as an integrated circuit chip) 109. The first signal wiring 102 and the second signal wiring 105 are electrically connected via a wiring 104 formed in a via hole 114 formed through the dielectric film 103.

When the integrated circuit chip 109 is flip-chip mounted on the second signal wiring 105, it faces a region where the circuit pattern of the integrated circuit chip 109 is formed (hereinafter, referred to as a circuit pattern region). In the region, a through hole 106 penetrating through the substrate 101 and the dielectric film 103 is formed.

A mounting portion of the integrated circuit chip 109 surrounded by a broken line A in FIG. 1 will be described with reference to FIG. FIG. 2 is an enlarged sectional view showing a mounting portion of an integrated circuit chip having a high-frequency circuit structure according to the above embodiment.

An integrated circuit chip (GaAs active element in this example) 109 has a circuit pattern 1 on one surface thereof.
09a is formed in the circuit pattern region 109b. The electrode 201 is formed on the same surface as the circuit pattern region 109b. The protruding electrodes 108 are formed on the electrodes 201, respectively.

The integrated circuit chip 109 having such a configuration is configured such that the surface on which the circuit pattern region 109b is formed is face-down so as to face the main surface 101a of the substrate 101, and the projecting electrode 108 and the second Is electrically connected to the signal wiring 105 by the conductive paste 202. Further, a joint between the protruding electrode 108 and the second signal wiring 105 is sealed with a sealing material 203.

In the flip-chip mounting portion of the integrated circuit chip 109 as described above, the integrated circuit chip 10
Since the through-hole 106 is formed in the substrate 101 and the dielectric film 103 corresponding to the 9 circuit pattern regions 109b, the substrate 101 and the dielectric film 103 do not exist on the circuit pattern region 109b. Further, when the sealing material 203 is injected into the joint between the protruding electrode 108 and the second signal wiring 105 during flip-chip mounting, the sealing material 203 does not enter the circuit pattern region 109b.
As a result, the integrated circuit chip 109 is mounted with the circuit pattern region 109b facing upward, that is, in the same direction as the substrate 101 (hereinafter, referred to as face-up mounting), and there is only air on the circuit pattern region 109b. According to the high-frequency circuit structure according to the present embodiment, even if the integrated circuit chip 109 is flip-chip mounted, even if it is designed to obtain desired characteristics, Only air is present on the pattern region 109b, which can be the same as the design condition. Accordingly, it is possible to prevent a situation in which the gain inherent in the integrated circuit chip 109 cannot be obtained due to a difference from the design conditions due to the influence of the substrate 101, the dielectric film 103, and the sealing material 203. .

It is preferable to use benzocyclobutene (BCB) having a small dielectric loss as a material of the dielectric film 103 to obtain a high-frequency circuit with a lower loss. Also, BC
B can be formed into a film by spin coating and curing treatment (curing), and is very effective in multilayering and miniaturizing a circuit.

Next, a method of manufacturing the high-frequency circuit structure according to this embodiment will be described. FIG. 3 is a cross-sectional view showing each step of the method for manufacturing the high-frequency circuit structure according to the above embodiment.

As shown in FIG. 3A, a first signal wiring 102 is formed on a main surface of a substrate 101. The first signal wiring 102 is formed, for example, by forming a metal film in a desired pattern on the main surface of the substrate 101 by electroplating or the like.

Next, as shown in FIG. 3B, a dielectric film 103 is formed so as to cover the main surface of the substrate 101 with the first signal wiring 102. The dielectric film 103 can be formed, for example, by spin-coating a dielectric film material such as benzocyclobutene and then performing a curing process (curing).

Next, as shown in FIG.
A resist film 301 is formed on the surface of the substrate 03, and a resist opening 302 is formed in the resist film 301 in a predetermined pattern. Then, dry etching is performed using the resist film 301 as an etching mask to form a via hole 114 in the dielectric film 103 and a circuit when the integrated circuit chip 109 is flip-chip mounted as shown in FIG. An opening 303 is formed in a region corresponding to the pattern region 109b.

Next, as shown in FIG.
After a metal film is formed on the surface of the substrate 03, the wiring 104, the second signal wirings 105 and 112, and the ground conductor 113 in the via hole 114 are respectively formed by etching with a predetermined pattern.

Thereafter, as shown in FIG.
01, a resist film 305 is formed on the back surface 101b,
Openings 306 and 307 are formed. Dry etching is performed using the resist film 305 as an etching mask. As a result, as shown in FIG. 3G, the substrate 101 corresponding to the wiring pattern area 112a where the second signal wiring 112 is formed is removed, and the hole area 107 is formed. At the same time, when the integrated circuit chip 109 is flip-chip mounted, the circuit pattern area 109
The substrate 101 in the region corresponding to b is removed, and a through hole 106 is formed in communication with the opening 303 formed in the dielectric film 103. In this manner, the hole area 107 for the thin film structure and the through-hole 106 for flip-chip mounting the integrated circuit chip 109 can be formed on the substrate 101 at the same time.

Next, dry etching performed by the method for manufacturing a high-frequency circuit structure according to the above embodiment will be described.

The formation of the through hole 106 and the hole region 107 in the substrate 101 is performed by dry etching. The dry etching method includes an inductively coupled plasma source (IC
P) is effective, and ICP can generate high-density plasma as compared with reactive ion etching (RIE), which is a general dry etching method, and is suitable for through hole processing and high aspect processing. FIG. 4 is a schematic configuration diagram showing a plasma etching apparatus using an inductively coupled plasma source equipped with a multi-spiral coil. 4 in the figure
01 indicates a multi-spiral coil. The multi-spiral coil 401 is provided on a quartz plate 403 provided on the top of an etching chamber 402 having a substantially cylindrical shape. Further, a high frequency power supply 404 is connected to the multi-spiral coil 401 so that a high frequency can be applied. Multi spiral coil 40
A matching circuit 408 for matching high-frequency power applied from the high-frequency power supply 404 to the multi-spiral coil 401 is connected to 1. The lower electrode 405 is also connected to a high frequency power supply 406 for applying a high frequency.
Etching places the substrate 407 on the lower electrode 405,
The process is performed by introducing a process gas into the chamber and applying a high frequency.

In the step of performing the dry etching shown in FIG. 3F, when the through hole 106 is formed, the plasma generated in the dry etching apparatus
6 and may reach the lower electrode 405 of the dry etching apparatus.

In order to prevent the plasma from reaching the lower electrode 405, as shown in FIG.
3, the protective layer 501 is formed in a part of the region including the opening 303, or as shown in FIG. 5B, the protective layer 503 is formed over the entire surface of the dielectric film 103. The protective layers 501 and 503 are, for example, a resist film, a laminate film, or the like. When plasma etching is performed in such a state, even if the substrate 101 is removed and the through-hole 106 is formed, the through-hole 106 is formed without the plasma reaching the lower electrode 405 because the protective layers 501 and 503 exist. be able to. Finally, the protective layer 50 on the dielectric film 103
By removing 1,503, a high-frequency circuit structure having the through-hole 106 and the hole region 107 for the thin film structure can be easily manufactured without breaking the plasma etching apparatus.

Although only one dielectric film 103 is used in the above-described embodiment, it is possible to form the signal wiring in multiple layers by using multiple layers. The through-hole 106 and the hole region 107 for the thin-film structure can be formed on the same substrate, so that miniaturization and high functionality of the circuit can be achieved.

The high-frequency circuit structure according to the present embodiment can be used for a radio terminal device, a radio base station device, and a radar device. For example, the second signal wiring 11 having a thin film structure
By adopting 2 as an antenna or a filter, a wireless terminal device, a wireless base station device, or a radar device equipped with a low-loss antenna or filter can be provided.

[0053]

As described above, according to the present invention,
In manufacturing a high-frequency circuit, a through-hole structure and a thin-film structure can be formed in the same substrate. By forming a through-hole structure in advance at a location where the chip-shaped integrated circuit is to be flip-chip mounted, characteristics inherent in the original chip-shaped integrated circuit can be obtained. Further, by shielding the signal wiring on the thin film structure, a circuit such as an antenna and a filter with low loss can be formed, and a small, high-performance high-frequency circuit board can be formed. In addition, by forming the wiring into multiple layers using a dielectric film such as BCB, it is possible to form a small-sized and low-loss multi-layer circuit board having a through hole structure and a thin film structure. Play.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a high-frequency circuit structure according to an embodiment of the present invention.

FIG. 2 is an enlarged sectional view showing a mounting portion of an integrated circuit chip having a high-frequency circuit structure according to the embodiment.

FIG. 3 is a sectional view showing each step of the method for manufacturing the high-frequency circuit structure according to the embodiment;

FIG. 4 is a schematic configuration diagram showing a plasma etching apparatus using an inductively coupled plasma source equipped with a multi-spiral coil.

FIG. 5 is a sectional view showing a modification of the method of manufacturing the high-frequency circuit structure according to the embodiment.

FIG. 6 is a sectional view showing a conventional high-frequency circuit.

[Explanation of symbols]

 Reference Signs List 101 substrate 101a main surface of substrate 101b back surface of substrate 102 first signal wiring 103 dielectric film 104 wiring 105 second signal wiring 106 through hole 107 hole area 108 projecting electrode 109 integrated circuit chip 109a circuit pattern 109b Circuit pattern region 110 Metal layer 111 Lid member 111a Depression 112 Second signal wiring 112a Wiring pattern region 113 Ground conductor 114 Via hole 201 Electrode 202 Conductive paste 203 Sealing material 301, 305 Resist film 401 Multi spiral coil 402 Etching chamber 403 Quartz plate 404 High-frequency power supply 405 Lower electrode 406 High-frequency power supply 407 Substrate 408 Matching circuit 501, 503 Protective layer

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H05K 1/02 H05K 1/02 P 5F058 3/00 K 3/00 3/46 Q 3/46 9/00 E 9/00 H01L 21/302 BF term (reference) 5E321 AA02 BB23 GG05 5E336 AA04 BB02 BB03 BC01 BC12 BC25 CC32 CC43 CC55 CC58 EE03 GG09 GG11 5E338 AA02 AA03 CC01 CC05 CC06 EE11 5E346 AA11 AABB BB11 BB16 FF45 GG15 GG22 HH06 5F004 AA02 BA20 BB18 BC08 DB01 5F058 AA10 AB10 AC10 AF04 AG01 AH02

Claims (15)

[Claims] A substrate or a substrate on which signal wiring is formed, a dielectric film formed so as to cover a main surface of the substrate, and a desired wiring pattern on a partial region of the dielectric film. The formed signal wiring, a hole area formed in a part of the substrate corresponding to a part of the dielectric film where the signal wiring is formed, and a main surface side of the substrate. And a through hole formed to penetrate the substrate and the dielectric film in a region facing the circuit pattern region of the integrated circuit chip when the integrated circuit chip is flip-chip mounted. High frequency circuit structure. 2. A substrate having a substrate or a signal wiring formed thereon, a dielectric film formed on a main surface of the substrate, and a multi-layered signal film formed on a partial region of the dielectric film. Wiring, a hole region formed in a partial region of the substrate corresponding to a partial region of the dielectric film in which the signal wiring is formed, and an integrated circuit chip on a main surface side of the substrate. A high frequency circuit structure comprising: a through hole formed to penetrate the substrate and the dielectric film in a region facing a circuit pattern region of the integrated circuit chip when flip-chip mounted. . 3. A flip chip mounted on a main surface side of a substrate in a state where a circuit member is positioned so as to cover the signal wiring and shield the signal wiring, and a circuit pattern region is positioned to face an opening of the through hole. 3. The high-frequency circuit structure according to claim 1, further comprising: an integrated circuit chip. 4. The high-frequency circuit structure according to claim 1, wherein the dielectric film is formed of benzocyclobutene. 5. A step of forming a dielectric film on a main surface of a substrate or a substrate on which signal wiring is formed, and forming a signal wiring in a desired wiring pattern on a partial region of the dielectric film. Forming a hole area by removing a part of the substrate corresponding to a part of the dielectric film on which the signal wiring is formed; and forming a hole region on the main surface of the substrate. Forming a through hole so as to penetrate the substrate and the dielectric film in a region facing the circuit pattern region of the integrated circuit chip when the integrated circuit chip is flip-chip mounted. A method for manufacturing a high-frequency circuit structure. 6. A step of forming a dielectric film on a main surface of a substrate or a substrate on which signal wiring is formed, and forming a signal wiring in a desired wiring pattern on a partial region of the dielectric film. Forming an opening by selectively etching a region facing a circuit pattern region of the integrated circuit chip when the integrated circuit chip of the dielectric film is flip-chip mounted; and Is selectively etched from the back side to remove a part of the substrate corresponding to a part of the dielectric film on which the signal wiring is formed, thereby forming a hole region and simultaneously forming the dielectric layer. Forming a through hole so as to penetrate the substrate and the dielectric film by removing a region corresponding to the opening formed in the body film. Construction method. 7. After forming an opening by etching the dielectric film, a protective layer is formed on a surface of the dielectric film including at least the opening, and an electrode is arranged on a main surface side of the substrate to form a back surface. 7. The method for manufacturing a high-frequency circuit structure according to claim 6, wherein, when selectively etching by plasma etching from the side, the protection layer prevents plasma passing through the through-hole from reaching the electrode. 8. The method according to claim 6, wherein the selective etching is performed using a resist film as a mask. 9. The method of manufacturing a high-frequency circuit structure according to claim 5, wherein the dielectric film is formed using benzocyclobutene. 10. A wireless terminal device having the high-frequency circuit structure according to claim 1. 11. A radio base station apparatus having the high-frequency circuit structure according to claim 1. 12. A radar apparatus having the high-frequency circuit structure according to claim 1. Description: 13. A wireless terminal device comprising a high-frequency circuit manufactured by using the method of manufacturing a high-frequency circuit structure according to claim 5. 14. A radio base station apparatus comprising a high-frequency circuit manufactured by using the method for manufacturing a high-frequency circuit structure according to claim 5. 15. A radar device comprising a high-frequency circuit manufactured by using the high-frequency circuit structure manufacturing method according to claim 5.