JP2002299748A - Semiconductor laser module mount and semiconductor laser module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser module mount, capable of preventing deterioration of an optical coupling ratio from a semiconductor laser element to an optical component and improving heat sink characteristics, and to provide a semiconductor laser module. SOLUTION: In the semiconductor laser module mount, the bottom 5a of a package 5 of the semiconductor laser module 1 is fixed onto a mouthing board 2. The bottom 5a is fixed onto the board 2, by screw clamping screws 3 in four screw holes 15 of the bottom 5a. Here, a sheet member 4 is interposed between the bottom 5a of the package 5 of the module 1 and the board 2. This member 4 is made of, for example, graphite having anisotropy in thermal conductivity, and hence has thermal conductivity of 300 W/m.k or more in the a surface direction.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor laser module package and a semiconductor laser module.

[0002]

2. Description of the Related Art Conventionally, for example, a semiconductor laser module package as shown in FIG. 5 is known. As shown in FIG. 5, the semiconductor laser module mounting body is mounted and fixed by, for example, a semiconductor laser module 1 used as a communication light source for optical communication or an excitation light source of an optical fiber amplifier, and screwing with a screw 3 or the like. And a mounting substrate 2 such as a print base 13 and a heat sink. The semiconductor laser module 1 includes a semiconductor laser element 6 inside a package 5.
(Not shown in FIG. 5) for inputting and transmitting laser light to the optical fiber 9. Between the bottom plate 5a of the package 5 of the semiconductor laser module 1 and the mounting substrate 2, for example, a thickness of about 0.2 mm and a thermal conductivity of
Member 17 made of silicone resin of about / m · K
Is interposed.

[0003]

In such a semiconductor laser module mounted body, since the heat conductivity of the sheet member 17 is low, it is necessary to improve the heat radiation characteristics from the semiconductor laser module 1 to the mounting board 2 by using the mounting board. It is necessary to fix the semiconductor laser module 1 in a state where the semiconductor laser module 1 is strongly pressed against the mounting substrate 2 by, for example, extremely increasing the screw tightening torque of the semiconductor laser module 1 with respect to the mounting substrate 2. In such a case, in the semiconductor laser module 1, the optical coupling rate from the semiconductor laser element 6 to the optical fiber 9 may be deteriorated, and the optical output may be reduced. This is because the semiconductor laser module 1 itself warps due to strong pressing against the mounting substrate 2 and the resin sheet member 1
It is considered that the reason is that the resin sheet member 17 is easily deformed to the bottom plate 5a of the semiconductor laser module 1 because the resin sheet 7 is soft. An object of the present invention is to provide a semiconductor laser module mounted body and a semiconductor laser module that can prevent deterioration of an optical coupling rate from a semiconductor laser element to an optical component and improve heat radiation characteristics.

[0004]

According to a first aspect of the present invention, there is provided a semiconductor laser device, an optical component for transmitting a laser beam output from the semiconductor laser device, and a semiconductor laser device. A semiconductor laser module mounting body having a semiconductor laser module having a package containing a part of the optical component fixed on a mounting board, and between the semiconductor laser module and the mounting board in a plane direction. A semiconductor laser module package is provided, wherein a graphite sheet member having a thermal conductivity of 300 W / m · K or more is interposed so as to be able to conduct heat.

According to a second aspect of the present invention, there is provided the semiconductor laser module package according to the first aspect, wherein the thickness of the sheet member is 0.2 mm or less.

According to a third aspect of the present invention, a resin layer is formed between the sheet member and the package and / or between the sheet member and the mounting board. 2. A semiconductor laser module package according to item 2.

According to a fourth aspect of the present invention, there is provided the semiconductor laser module package according to the third aspect, wherein a total thickness of the resin layer is 0.05 mm or less.

According to a fifth aspect of the present invention, the semiconductor laser module has an optical output of 300 mW or more, and a temperature control module for radiating heat generated by the semiconductor laser element to the mounting substrate is provided inside the package. The semiconductor laser module package according to any one of claims 1 to 4 is provided.

According to a sixth aspect of the present invention, there is provided a semiconductor laser comprising: a semiconductor laser device; an optical component for transmitting a laser beam output from the semiconductor laser device; and a package accommodating the semiconductor laser device and a part of the optical component. A semiconductor laser module, wherein a graphite sheet member having a thermal conductivity of 300 W / m · K or more in a surface direction is fixed on a mounting substrate mounting surface of the package. Is provided.

According to a seventh aspect of the present invention, there is provided the semiconductor laser module according to the sixth aspect, wherein the sheet member has a uniform thickness of 0.2 mm or less.

According to an eighth aspect of the present invention, there is provided the semiconductor laser module according to the sixth or seventh aspect, wherein a resin layer is formed between the sheet member and the package.

In the ninth aspect, the thickness of the resin layer is 0.0
9. The semiconductor laser module according to claim 8, wherein the length is 5 mm or less.

According to a tenth aspect of the present invention, the optical output is 300 mW or more, and a temperature control module for dissipating heat generated in the semiconductor laser element to the mounting substrate side is provided inside the package. A semiconductor laser module according to any one of 6 to 9, is provided.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to the drawings. FIGS. 1A and 1B are side sectional views of a semiconductor laser module package according to the present embodiment. As shown in FIGS. 1 (a) and 1 (b), this semiconductor laser module package is a semiconductor laser module 1 used as a communication light source for optical communication or an excitation light source for an optical amplifier, for example.
And a mounting substrate 2 such as a print base 13 or a heat sink, which is mounted and fixed by screwing with screws 3 or the like.

The semiconductor laser module 1 includes a semiconductor laser element 6, a first lens 7, a second lens 8, and an optical fiber 9 as optical components for transmitting laser light output from the semiconductor laser element 6. Laser element 6
And a package 5 containing the first lens 7 and the second lens 8. The package 5 has a bottom plate 5a having good thermal conductivity made of, for example, a Cu-W based alloy.
As shown in FIG. 1B, screw holes 15 are formed in the four flange portions a.

The semiconductor laser element 6 includes a chip carrier 20
And a temperature control module 14 (so-called TEC: Thermal)
Electric Cooler) fixed and temperature control module 1
The lower portion 4 is soldered to the upper surface of the bottom plate 5a of the package 5.

The first lens 7 and the optical isolator 12 are fixed on the base 13. A second lens 8 is fixed in a cylindrical portion 5 b protruding from a side portion of the package 5. An optical fiber 9 is fixed to the outside of the package 5 of the cylindrical portion 5b via a ferrule 10 and a sleeve 11. Reference numeral 18 denotes a hermetic glass that transmits laser light, and reference numeral 19 denotes a monitor photodiode that monitors light output from the rear of the semiconductor laser element 6. A thermistor (not shown) is provided in the vicinity of the semiconductor laser element 6 to detect the temperature, and the temperature control module 14 controls the thermistor temperature to be constant.

In such a semiconductor laser module 1, the laser light emitted from the front of the semiconductor laser element 6 is converted into parallel light by the first lens 7,
2. The light is condensed by the second lens via the hermetic glass 18, is incident on the optical fiber 9, and is transmitted through the optical fiber 9.

In the semiconductor laser module mounted body of this embodiment, the semiconductor laser module 1 includes a package 5
Is fixed on the mounting board 2. Bottom plate 5a
The bottom plate 5 a is fixed on the mounting board 2 by screwing the four screw holes 15 with the screws 3.

Here, a sheet member 4 is interposed between the bottom plate 5a of the package 5 of the semiconductor laser module 1 and the mounting substrate 2. The sheet member 4 is made of, for example, graphite having anisotropic thermal conductivity, and has a thermal conductivity of 300 W / m · K or more in the plane direction.

As the sheet member 4, for example, a PGS (trademark) sheet manufactured by Matsushita Electronic Parts Co., Ltd. can be used. By using such a sheet member 4 having a high heat radiation property, the heat radiation characteristic from the semiconductor laser module 1 to the mounting substrate 2 is ensured even when the screw tightening torque is, for example, about 0.1 N · m. Of the semiconductor laser module 1 due to too high a screw tightening torque can be prevented. The screw tightening torque of the screw 3 is preferably, for example, 0.2 N · m or less from the viewpoint of deterioration of the optical coupling rate.

For example, in the configuration of this embodiment, when the optical coupling ratio is about 80% before screwing with the screw 3, it is about 80% even after screwing with the screw 3, that is, almost the same high. The value is maintained. Also, the sheet member 4
Is formed with a uniform thickness of 0.2 mm or less. Since the sheet member 4 is formed to have a thickness of 0.2 mm or less in the thickness direction where the thermal conductivity is low, the heat radiation from the semiconductor laser module 1 to the mounting board 2 is favorably maintained. .

FIG. 2 shows a semiconductor module 6 using a laser module package using such a sheet member 4.
5 is a graph in which the horizontal axis represents the driving current (laser driving current) and the vertical axis represents changes in the TEC power consumption and the package temperature. The sheet member 4 has a thermal conductivity of 6 in the plane direction.
00 W / m · K, thermal conductivity in the thickness direction is 5 W / m · K,
Those having a width of 13 mm, a length of 30 mm, and a thickness of 0.1 mm were used.

As a comparative example, the results when a sheet member 17 made of a silicone resin is interposed (see FIG. 5) are also shown. As the sheet member 17 made of silicone resin, a sheet member having a thermal conductivity of 10 W / m · K, a width of 13 mm, a length of 30 mm, and a thickness of 0.1 mm was used. The package temperature is set to 75 ° C. on the mounting board 2 side. The semiconductor laser module 1 and the mounting board 2 have four screws 3 of JIS standard value M2 at four points.
The screw tightening torque was 0.1 N · m.

In FIG. 2, a curve represents a change in power consumption of the temperature control module in the case of the present embodiment, and a curve represents a change in power consumption of the temperature control module in the case of the comparative example. The curves of the change of the package temperature in the case of the embodiment show the change of the package temperature in the case of the comparative example, respectively.

From the curve, the power consumption of the TEC is:
The case of the present embodiment is about 2 times smaller than that of the comparative example.
It was found to be 5% lower. From the curve again,
The change in the package temperature is not more than 1 ° C. in the present embodiment, as compared with a maximum temperature difference of 10 ° C. in the comparative example.
° C, and it was found that there was almost no change. That is, it was found that the comparative example had a large thermal resistance between the semiconductor laser module 1 and the mounting substrate 2, whereas the embodiment had only 1/10 or less the thermal resistance of the comparative example.

With the above screw tightening torque, the optical coupling ratio hardly deteriorated. Even if the screw tightening torque is improved, in the case of the present embodiment using the sheet member 4 made of hard graphite, it is sufficiently expected that the deterioration of the optical coupling rate is suppressed as compared with the comparative example.

As described above, according to the present embodiment, it is possible to provide a semiconductor laser module mounted body having improved heat radiation from the semiconductor laser element 6 and a high optical coupling rate.
In particular, the semiconductor laser module 1 used as an excitation light source for an optical fiber amplifier is required to increase the optical output year by year. Recently, a high output module that can be industrially used up to 300 mW or more is required.

Such a high-power module can further utilize heat radiation characteristics and light even if the present technology for increasing the power of the semiconductor laser element 6, the heat radiation technology of the temperature control module 14, and the assembly technology of the semiconductor laser module 1 are used. It is difficult to realize unless both coupling rates are good. Therefore 30
It is very effective to use the configuration as in the present embodiment for a semiconductor laser module package requiring a high optical output of 0 mW or more.

The surface of the package 5 and the surface of the mounting board 2 on which the sheet member 4 is interposed may not have good flatness. In such a case, as shown in FIG. 3, between the sheet member 4 and the package 5 and / or between the sheet member 4 and the mounting board 2, an acrylic resin, a polyimide resin, By forming resin layers 16 a and 16 b made of resin or the like and filling gaps that can be minutely generated between the semiconductor laser module 1 or the mounting substrate 2 and the sheet member 4, the semiconductor laser module 1 can be further mounted on the mounting substrate 2. Heat dissipation can be improved.

The resin layers 16a and 16b are
If the thickness is too large, heat dissipation from the semiconductor laser element 6 may be reduced. Therefore, the resin layer 16 is required to secure heat dissipation.
It is preferable that the total thickness of a and 16b is 0.05 mm or less. It is preferable that the resin layers 16a and 16b have high viscosity so as not to flow out to other portions on the mounting board 2.

Next, FIG. 4 shows a side view of the semiconductor laser module 1 of this embodiment. The package 5 and the inside of the semiconductor laser module 1 are the same as those shown in FIG. The semiconductor laser module 1 of the present embodiment integrates the semiconductor laser module 1 and the sheet member 4 in advance by using a highly adhesive resin layer 16a between the sheet member 4 and the semiconductor laser module 1. Is characteristic.

[0033] Graphite is a material having little adhesion. Therefore, if the sheet member 4 made of the material is bonded and fixed to the semiconductor laser module 1 using the adhesive resin layer 16a, workability is improved when the semiconductor laser module 1 is mounted on the mounting substrate 2. preferable.

Although the embodiments of the present invention have been described above, the semiconductor laser module mounted body and the semiconductor laser module 1 of the present invention are not limited to these. For example, the semiconductor laser module 1 is not limited to the one that inputs laser light to the optical fiber 9 with two lenses as in each of the embodiments described above. The light may be directly incident on the optical fiber 9 without passing through the optical fiber 9.

The method of fixing the semiconductor laser module 1 and the mounting substrate 2 is not limited to screw tightening. A method of providing a mechanism for pressing the resin layer, or simply using a material having good adhesiveness as the resin layers 16a and 16b and bonding and fixing the same can be used.

For example, when screw tightening is used, heat radiation is ensured because the surface contact between the semiconductor laser module 1 and the mounting substrate 2 is improved, but the surface contact between the semiconductor laser module 1 and the mounting substrate 2 is improved. A smaller one is preferable from the viewpoint of preventing the deterioration of the optical coupling rate of the semiconductor laser module 1.

As the surface adhesion between the semiconductor laser module 1 and the mounting substrate 2 decreases, the resin layer 16a,
The use of the resin layers 16a and 16b is preferred because the heat radiation effect of the use of the resin layers 16b is enhanced.

[0038]

According to the semiconductor laser module mounted body and the semiconductor laser module of the present invention, the semiconductor laser module is mounted between the semiconductor laser module and the mounting substrate in a plane direction.
Since a graphite sheet member having a thermal conductivity of 0 W / m · K or more is interposed, it is possible to prevent the deterioration of the optical coupling rate from the semiconductor laser element to the optical component and to prevent the semiconductor laser module from being mounted on the mounting substrate. Heat radiation characteristics can be improved.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing one embodiment of a semiconductor laser module package according to the present invention.

FIG. 2 shows a semiconductor laser module package according to the present invention;
FIG. 9 is a graph of a semiconductor laser module mounted body of a comparative example, in which a horizontal axis indicates a drive current of a semiconductor laser element, and a vertical axis indicates power consumption and a package temperature of a temperature control module, and a heat radiation characteristic is measured.

FIG. 3 is a partial side sectional view showing a modified example of the semiconductor laser module mounted body of the present invention.

FIG. 4 is a side sectional view showing one embodiment of the semiconductor laser module of the present invention.

FIG. 5 is a side view of a conventional semiconductor laser module package.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor laser module 2 Mounting board 3 Screw 4 Graphite sheet member 5 Package 5a Package bottom plate 5b Package cylindrical part 6 Semiconductor laser element 7 First lens 8 Second lens 9 Optical fiber 10 Ferrule 11 Sleeve 12 Optical isolator 13 Base 14 Temperature control module 15 Screw holes 16a, 16b Resin layer 17 Resin sheet member 18 Hermetic glass 19 Monitor photodiode 20 Chip carrier

Claims (10)

[Claims] 1. A semiconductor laser module having a semiconductor laser device, an optical component for transmitting laser light output from the semiconductor laser device, and a package containing a part of the semiconductor laser device and the optical component is mounted. A semiconductor laser module mounted body fixed on a substrate, between the semiconductor laser module and the mounting substrate,
A semiconductor laser module mounted body characterized in that a graphite sheet member having a thermal conductivity of 300 W / m · K or more is interposed in a plane direction so as to be able to conduct heat. 2. The semiconductor laser module package according to claim 1, wherein said sheet member has a thickness of 0.2 mm or less. 3. The resin layer according to claim 1, wherein a resin layer is formed between the sheet member and the package and / or between the sheet member and the mounting board. Semiconductor laser module package. 4. The semiconductor laser module package according to claim 3, wherein a total thickness of said resin layer is 0.05 mm or less. 5. An optical output of the semiconductor laser module is 30.
0 mW or more, and a temperature control module for dissipating heat generated by the semiconductor laser element to the mounting substrate side is provided inside the package.
5. The semiconductor laser module package according to any one of 4. 6. A semiconductor laser module comprising: a semiconductor laser device; an optical component for transmitting laser light output from the semiconductor laser device; and a package containing a part of the semiconductor laser device and the optical component. The package mounting surface of the package has 3
A semiconductor laser module, wherein a graphite sheet member having a thermal conductivity of 00 W / m · K or more is surface-fixed. 7. The semiconductor laser module according to claim 6, wherein said sheet member has a uniform thickness of 0.2 mm or less. 8. The semiconductor laser module according to claim 6, wherein a resin layer is formed between said sheet member and said package. 9. The semiconductor laser module according to claim 8, wherein said resin layer has a thickness of 0.05 mm or less. 10. The package according to claim 6, wherein an optical output is 300 mW or more, and a temperature control module for dissipating heat generated in the semiconductor laser device to a mounting substrate side is provided inside the package. The semiconductor laser module according to any one of the above.