JP2002299670A5 - - Google Patents
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- JP2002299670A5 JP2002299670A5 JP2001105020A JP2001105020A JP2002299670A5 JP 2002299670 A5 JP2002299670 A5 JP 2002299670A5 JP 2001105020 A JP2001105020 A JP 2001105020A JP 2001105020 A JP2001105020 A JP 2001105020A JP 2002299670 A5 JP2002299670 A5 JP 2002299670A5
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【特許請求の範囲】
【請求項１】 シリコン原子を主成分とするシリコン系薄膜であって、前記シリコン系薄膜は、非晶質相の中にダイヤモンド構造の構造秩序をもつ領域が分散して存在する領域を有し、
前記非晶質相の中にダイヤモンド構造の構造秩序をもつ領域が分散して存在する領域におけるダイヤモンド構造の構造秩序距離の最大値が０．５ｎｍ以上２０ｎｍ以下である領域が、前記シリコン系薄膜の７５％以上を占めていることを特徴とするシリコン系薄膜。
【請求項２】 前記最大値が０．５ｎｍ以上２０ｎｍ以下であるダイヤモンド構造の構造秩序距離をもつ領域の形状が、概球状であることを特徴とする請求項１に記載のシリコン系薄膜。
【請求項３】 前記シリコン系薄膜の光学的バンドギャップが１．５ｅＶ以上１．８ｅＶ以下であることを特徴とする請求項１または２に記載のシリコン系薄膜。
【請求項４】 前記シリコン系薄膜の結晶成分に起因するラマン散乱強度がアモルファス成分に起因するラマン散乱強度以下であること特徴とする請求項１乃至３のいずれか１項に記載のシリコン系薄膜。
【請求項５】 シリコン系薄膜の製造方法であって、
該シリコン系薄膜が、真空容器内に原料ガスを導入し、前記真空容器内に導入した基板上に、前記真空容器内に設けられた高周波導入部から高周波を導入することによって行われる高周波プラズマＣＶＤ法を用いて形成されたものであって、
プラズマの生起している放電空間の一部が前記基板の少なくとも一部で覆われており、高周波導入部と前記基板とが対向しており、前記高周波導入部と前記基板との距離が３ｍｍ以上３０ｍｍ以下であり、放電空間内の圧力が９０Ｐａ（０．６８Ｔｏｒｒ）以上１．５×１０４Ｐａ（１１３Ｔｏｒｒ）以下であり、前記プラズマの生起している放電空間の体積をＶ（ｍ３）、前記原料ガスの流量をＱ（ｃｍ３／ｍｉｎ（ｎｏｒｍａｌ））、放電空間の圧力をＰ（Ｐａ）としたときに、τ＝５９２×Ｖ×Ｐ／Ｑで定義される滞留時間τが、０．０１秒以上１０秒以下であることを特徴とするシリコン系薄膜の製造方法。
【請求項６】 前記原料ガスが、水素化シリコン化合物と水素とを含む混合ガスからなることを特徴とする請求項５に記載のシリコン系薄膜の製造方法。
【請求項７】 前記高周波導入部と前記基板との距離を変化させながら形成を行うことを特徴とする請求項５に記載のシリコン系薄膜の製造方法。
【請求項８】 前記高周波導入部と前記基板との距離の変化が周期的な変化であることを特徴とする請求項７に記載のシリコン系薄膜の製造方法。
【請求項９】 前記高周波の出力が、前記原料ガスを１００％分解するのに必要な出力以下であることを特徴とする請求項５に記載のシリコン系薄膜の製造方法。
【請求項１０】 前記高周波の出力が、前記原料ガスを１００％分解するのに必要な出力の１／３以上であることを特徴とする請求項９に記載のシリコン系薄膜の製造方法。
【請求項１１】 基板上に少なくとも一組のｐｉｎ接合からなる半導体層を含んだ光起電力素子の少なくとも一つのｉ型半導体層が、シリコン原子を主成分とするシリコン系薄膜を含み、前記シリコン系薄膜が、非晶質相の中にダイヤモンド構造の構造秩序をもつ領域が分散して存在する領域を含み、前記非晶質相の中にダイヤモンド構造の構造秩序をもつ領域が分散して存在する領域におけるダイヤモンド構造の構造秩序距離の最大値が０．５ｎｍ以上２０ｎｍ以下である領域が、前記シリコン系薄膜の７５％以上を占めていることを特徴とする光起電力素子。
【請求項１２】 前記最大値が０．５ｎｍ以上２０ｎｍ以下であるダイヤモンド構造の構造秩序距離をもつ領域の形状が、概球状であることを特徴とする請求項１１に記載の光起電力素子。
【請求項１３】 前記シリコン系薄膜の光学的バンドギャップが１．５ｅＶ以上１．８ｅＶ以下であることを特徴とする請求項１１または１２に記載の光起電力素子。
【請求項１４】 前記シリコン系薄膜の結晶成分に起因するラマン散乱強度がアモルファス成分に起因するラマン散乱強度以下であること特徴とする請求項１１乃至１３のいずれか１項に記載の光起電力素子。
【請求項１５】 基板上に少なくとも一組のｐｉｎ接合からなる半導体層を含んだ光起電力素子の製造方法であって、
前記半導体層が、真空容器内に原料ガスを導入し、前記真空容器内に導入した基板上に、前記真空容器内に設けられた高周波導入部から高周波を導入することによって行われる高周波プラズマＣＶＤ法を用いて形成されたものであって、
光起電力素子の少なくとも一つのｉ型半導体層を構成するシリコン原子を主成分とするシリコン系薄膜の作製条件が、プラズマの生起している放電空間の一部が前記基板の少なくとも一部で覆われており、高周波導入部と前記基板とが対向しており、前記高周波導入部と前記基板との距離が３ｍｍ以上３０ｍｍ以下であり、放電空間内の圧力が９０Ｐａ（０．６８Ｔｏｒｒ）以上１．５×１０４Ｐａ（１１３Ｔｏｒｒ）以下であり、前記プラズマの生起している放電空間の体積をＶ（ｍ３）、前記原料ガスの流量をＱ（ｃｍ３／ｍｉｎ（ｎｏｒｍａｌ））、放電空間の圧力をＰ（Ｐａ）としたときに、τ＝５９２×Ｖ×Ｐ／Ｑで定義される滞留時間τが、０．０１秒以上１０秒以下であることを特徴とする光起電力素子の製造方法。
【請求項１６】 前記原料ガスが、水素化シリコン化合物と水素とを含む混合ガスからなることを特徴とする請求項１５に記載の光起電力素子の製造方法。
【請求項１７】 前記高周波導入部と前記基板との距離を変化させながら形成を行うことを特徴とする請求項１５に記載の光起電力素子の製造方法。
【請求項１８】 前記高周波導入部と前記基板との距離の変化が周期的な変化であることを特徴とする請求項１７に記載の光起電力素子の製造方法。
【請求項１９】 前記高周波の出力が、前記原料ガスを１００％分解するのに必要な出力以下であることを特徴とする請求項１５に記載の光起電力素子の製造方法。
【請求項２０】 前記高周波の出力が、前記原料ガスを１００％分解するのに必要な出力の１／３以上であることを特徴とする請求項１９に記載の光起電力素子の製造方法。
[Claims]
1. A silicon-based thin film containing silicon atoms as a main component, wherein the silicon-based thin film has a region in which regions having a structural order of a diamond structure are dispersed in an amorphous phase. ,
The region where the maximum value of the structural order distance of the diamond structure in the region where the region having the structural order of the diamond structure is dispersed in the amorphous phase is 0.5 nm or more and 20 nm or less is the region of the silicon-based thin film. A silicon-based thin film characterized by occupying 75% or more.
2. The silicon-based thin film according to claim 1, wherein a region having a structural order distance of a diamond structure having a maximum value of 0.5 nm or more and 20 nm or less is substantially spherical.
3. The silicon-based thin film according to claim 1, wherein an optical band gap of the silicon-based thin film is 1.5 eV or more and 1.8 eV or less.
4. The silicon-based thin film according to claim 1, wherein the Raman scattering intensity caused by the crystalline component of the silicon-based thin film is not more than the Raman scattering intensity caused by the amorphous component. .
[Claim 5] A method for producing a silicon-based thin film,
TheA high-frequency plasma CVD method in which a silicon-based thin film is introduced by introducing a raw material gas into a vacuum vessel and introducing a high frequency from a high-frequency introduction portion provided in the vacuum vessel onto a substrate introduced into the vacuum vessel. Formed using
A part of the discharge space where the plasma is generated is covered with at least a part of the substrate, the high-frequency introduction part and the substrate are opposed to each other, and the distance between the high-frequency introduction part and the substrate is 3 mm or more. 30 mm or less, and the pressure in the discharge space is 90 Pa (0.68 Torr) or more and 1.5 × 104Pa (113 Torr) or less, and the volume of the discharge space in which the plasma occurs is V (m3), The flow rate of the source gas is Q (cm3/ Min (normal)), where the discharge space pressure is P (Pa), the residence time τ defined by τ = 592 × V × P / Q is 0.01 seconds or more and 10 seconds or less. FeaturesRuRecon thin filmManufacturing method.
6. The silicon-based thin film according to claim 5, wherein the source gas is a mixed gas containing a silicon hydride compound and hydrogen.Manufacturing method.
7. The formation is performed while changing a distance between the high-frequency introducing portion and the substrate.UThe silicon-based thin film according to claim 5Manufacturing method.
8. The silicon-based thin film according to claim 7, wherein a change in the distance between the high-frequency introducing portion and the substrate is a periodic change.Manufacturing method.
9. The silicon-based thin film according to claim 5, wherein the output of the high frequency is equal to or lower than an output necessary for 100% decomposition of the source gas.Manufacturing method.
10. The silicon-based thin film according to claim 9, wherein the output of the high frequency is 1/3 or more of the output required for 100% decomposition of the source gas.Manufacturing method.
11. A photovoltaic device comprising a semiconductor layer comprising at least one pair of pin junctions on a substrate, wherein at least one i-type semiconductor layer comprises a silicon-based thin film mainly composed of silicon atoms, A thin film containing a region in which a structural order of diamond structure is dispersed in an amorphous phase, and a region having a structural order of diamond structure is present in the amorphous phase. A photovoltaic device characterized in that a region where the maximum value of the structural order distance of the diamond structure in the region to be applied is 0.5 nm or more and 20 nm or less occupies 75% or more of the silicon-based thin film.
12. The photovoltaic device according to claim 11, wherein the shape of the region having a structural order distance of a diamond structure having a maximum value of 0.5 nm to 20 nm is approximately spherical.
13. The photovoltaic device according to claim 11, wherein an optical band gap of the silicon-based thin film is 1.5 eV or more and 1.8 eV or less.
14. The photovoltaic device according to claim 11, wherein the Raman scattering intensity caused by the crystalline component of the silicon-based thin film is not more than the Raman scattering intensity caused by the amorphous component. element.
15. Claims A method for producing a photovoltaic device including a semiconductor layer comprising at least one pair of pin junctions on a substrate,
AboveSemiconductor layerHowever, using a high-frequency plasma CVD method in which a source gas is introduced into a vacuum vessel and a high frequency is introduced from a high-frequency introduction portion provided in the vacuum vessel onto a substrate introduced into the vacuum vessel. Formed,
The production conditions of the silicon-based thin film mainly composed of silicon atoms constituting at least one i-type semiconductor layer of the photovoltaic device are as follows:A part of the discharge space where the plasma is generated is covered with at least a part of the substrate, the high-frequency introduction part and the substrate are opposed to each other, and the distance between the high-frequency introduction part and the substrate is 3 mm or more. 30 mm or less, and the pressure in the discharge space is 90 Pa (0.68 Torr) or more and 1.5 × 104Pa (113 Torr) or less, and the volume of the discharge space in which the plasma occurs is V (m3), The flow rate of the source gas is Q (cm3/ Min (normal)), where the discharge space pressure is P (Pa), the residence time τ defined by τ = 592 × V × P / Q is 0.01 seconds or more and 10 seconds or less. FeaturesLightElectromotive force elementManufacturing method.
16. The photovoltaic device according to claim 15, wherein the source gas is a mixed gas containing a silicon hydride compound and hydrogen.Manufacturing method.
17. The formation is performed while changing a distance between the high-frequency introduction portion and the substrate.UThe photovoltaic device according to claim 15, whereinManufacturing method.
18. The photovoltaic element according to claim 17, wherein a change in the distance between the high-frequency introducing portion and the substrate is a periodic change.Manufacturing method.
19. The photovoltaic device according to claim 15, wherein the output of the high frequency is equal to or lower than an output necessary for 100% decomposition of the source gas.Manufacturing method.
20. The photovoltaic device according to claim 19, wherein the output of the high frequency is not less than 1/3 of the output required for 100% decomposition of the source gas.Manufacturing method.
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| JP2001105020A JP2002299670A (en) | 2001-04-03 | 2001-04-03 | Silicon-based thin film and photovoltaic element |
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| JP2001105020A JP2002299670A (en) | 2001-04-03 | 2001-04-03 | Silicon-based thin film and photovoltaic element |
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| JP2002299670A JP2002299670A (en) | 2002-10-11 |
| JP2002299670A5 true JP2002299670A5 (en) | 2009-12-17 |
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