JP2002289828A - Color imaging device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce variation in signal-to-noise ratio from one color to another in a color imaging sensor. SOLUTION: A color imaging device includes sampling points containing an array, where first photoelectric conversion element rows in first color and second photoelectric conversion element rows in a second color and in a third color are alternately arranged in the direction of columns; vertical charge transfer channels formed, in one-to-one correspondence with the photoelectric conversion element columns; the edges in certain positions of the photoelectric conversion elements contained in the first photoelectric conversion element rows and the second photoelectric conversion element rows; first and second readout gates respectively formed between the photoelectric conversion element columns containing the respective photoelectric conversion elements and the corresponding vertical charge transfer channels; and first and second charge transfer electrodes, that are formed in one-to-one correspondence with the photoelectric conversion element rows and cover the first and second readout gates. A charge readout signal is applied only to either the first charge transfer electrode or the second charge transfer electrode with a first timing. A charge readout pulse signal is applied to the first and second charge transfer electrodes with a second timing. Charges read out with the first timing are externally transferred through the vertical charge transfer channels, during the period between readout with the first timing and readout with the second timing.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a color image pickup apparatus, and more particularly to a so-called honeycomb type color image pickup apparatus in which sampling points are arranged in a checkered pattern. , R / B interpolation point sequential or R / B interpolation line sequential primary color system color imaging apparatus.

[0002]

2. Description of the Related Art In a color image pickup apparatus used for a digital still camera or the like, a large number of photoelectric conversion elements are arranged on a two-dimensional plane at a constant pitch in a plurality of columns and a plurality of rows. The conversion element column and one photoelectric conversion element row each include a plurality of photoelectric conversion elements.

FIG. 5 is a plan view of a CCD solid-state imaging device using color filters of three primary colors of RGB. The CCD solid-state imaging device B includes a semiconductor substrate 100 that defines a two-dimensional plane.
Above, photoelectric conversion elements (photodiodes) 103 are formed in a matrix. The vertical charge transfer channel 105 extends in the vertical direction (column direction) on the drawing sheet in the vicinity of the photoelectric conversion element array arranged in the column direction. Photoelectric conversion element 1
A read gate 103a is formed between the read gate 103 and the vertical charge transfer channel 105.

A horizontal charge transfer channel 107 extending in the horizontal direction (row direction) is provided at one end of the vertical charge transfer channel 105.
Are formed. An output amplifier 11 for amplifying and outputting a charge signal is provided at one end of the horizontal charge transfer channel 107.
0 is formed.

On the plurality of vertical charge transfer channels 105, two upper and lower vertical charge transfer electrodes 111a and 111b are formed for one photoelectric conversion element 103.

Further, the solid-state imaging device B includes a read pulse signal for reading charges from the photoelectric conversion element 103 to the vertical charge transfer channel 105 with respect to the vertical charge transfer electrodes 111a and 111b,
5 is transferred to the horizontal charge transfer channel 107.
And a control circuit C for applying a charge transfer signal for transfer in the direction of.

The control circuit C controls the vertical charge transfer electrode 111a
When a high-voltage pulse voltage for reading out charges is applied to the, the charges stored in the photoelectric conversion element 103 are read out into the vertical charge transfer channel 105. When the control circuit C applies a voltage for transferring charges to the vertical charge transfer electrode 111a and the vertical charge transfer electrode 111b, the electrons in the vertical charge transfer channel 105 are transferred to the horizontal charge transfer channel 107. You. The electrons transferred into the horizontal charge transfer channel 107 are transferred toward the output amplifier 110 by applying a voltage to the horizontal charge transfer electrodes 115a and 115b.

[0008] By processing these signals, an image signal can be formed.

[0009]

In a solid-state imaging device having a primary color filter, R (red) and B
The sensor sensitivity of G (green) (signal / noise ratio: hereinafter referred to as S / N ratio) is higher than that of (blue). This is because, in the spectral sensitivity of the photodiode, G is R and B
(Hereinafter abbreviated as “RB”), and a certain level of noise, which hardly depends on the amount of incident light, is dominant among the noise components.

An object of the present invention is to provide an S / N ratio of RB to G.
It is to improve the ratio.

[0011]

According to one aspect of the present invention, the first photoelectric conversion element having the first color filter is a sampling point which is arranged in a checkered and matrix manner. A first photoelectric conversion element row aligned in the direction, and a second photoelectric conversion element with a second color filter and a third photoelectric conversion element with a third color filter are arranged in the row direction. Sampling points including alternately arranged second photoelectric conversion element rows arranged in the column direction, and one sampling point each corresponding to one column of photoelectric conversion element rows arranged in the column direction are provided. A vertical charge transfer channel extending in the column direction, a first read gate formed between the first photoelectric conversion element and the corresponding vertical charge transfer channel, and the second and third photoelectric conversion elements And between the corresponding vertical charge transfer channel A second read gate formed, and at least one charge transfer electrode formed on the vertical charge transfer channel and provided for one row of photoelectric conversion elements, wherein the charge transfer electrode is provided on the first read gate. Charge transfer electrode including a first charge transfer electrode covering the first readout gate and a second charge transfer electrode covering the second readout gate, and an exposure start timing for starting accumulation of charges in the photoelectric conversion element At a first read timing t2 after a lapse of a first period from t1, a charge read pulse signal is applied to only one of the first charge transfer electrode and the second charge transfer electrode. At a second read timing t3 after a lapse of a second period from the first read timing t2, a charge read pulse signal is applied to the first and second charge transfer electrodes, One, the first
A signal for transferring charges read out at the first read timing t2 to the outside as unnecessary charges via the vertical charge transfer channel within a certain period between the readout timing t2 and the second readout timing t3. And a control circuit for applying the control signal to the charge transfer electrode.

According to another aspect of the present invention, the sampling points are arranged in a checkered and matrix form, and the first photoelectric conversion elements having the first color filters are arranged in the row direction. A first photoelectric conversion element row, and a second photoelectric conversion element provided with a second color filter and a third photoelectric conversion element provided with a third color filter are alternately arranged in the row direction. A second photoelectric conversion element row, a sampling point including an alternating arrangement in the column direction, a single vertical charge transfer channel provided corresponding to the photoelectric conversion element columns arranged in the column direction and extending in the column direction, The edge provided at a certain position of the photoelectric conversion element included in the first photoelectric conversion element row and the second photoelectric conversion element row and the photoelectric conversion element row including each photoelectric conversion element are provided. A vertical charge transfer channel And a second readout gate, and at least one charge transfer electrode provided in one row of the photoelectric conversion element row and extending in the row direction, wherein the first photoelectric conversion element row and the second photoelectric conversion element are provided. A color imaging device including, for each row, a charge transfer electrode including a first charge transfer electrode covering over the first readout gate and a second charge transfer electrode covering over the second readout gate. A control method, wherein: (a) at an exposure start timing t1, a step of starting accumulation of electric charges in the photoelectric conversion element;
(B) At a first read timing t2 after a lapse of a first period from the exposure start timing t1, the first read timing t2
Applying a charge readout pulse signal to only one of the charge transfer electrode or the second charge transfer electrode,
(C) discharging the signal charges read in the step (b) to the outside as unnecessary charges through the vertical charge transfer channel; and (d) after a lapse of a second period from the first read timing t2. Applying a charge readout pulse signal to both the first and second charge transfer electrodes at the second readout timing t3.

At the first read timing, only the electric charges accumulated in one of the first photoelectric conversion element row and the second photoelectric conversion element row are read out, and the unnecessary electric charges which do not contribute to image formation are sent to the outside. Spit out. At the second readout timing, by reading out the second charges accumulated in the first to third rows of the photoelectric conversion elements, the second charges can be used for image formation.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS If the exposure time of RB and the exposure time of G can be properly adjusted, the difference in S / N ratio between RB and G can be improved. As a method of adjusting the exposure time of G and RB, a method of opening and closing an electronic shutter using an overflow drain structure can be considered. However, the control method using the electronic shutter is a method of uniformly discharging charges to the substrate side for all photoelectric conversion elements. Since the charges accumulated in RB and G cannot be discharged independently, the exposure time of RB and G cannot be adjusted independently.

The inventor of the present invention has proposed that R
Forming a row in which only B exists and a row in which only G exists,
In the exposure state, for example, it was conceived to read out only the charge of G independently of the charge of RB, and then perform the operation of reading out RGB again. The G charge read first may be transferred from the horizontal charge transfer channel to the outside via the vertical charge transfer channel. Preferably, for each of the RGB colors, a color filter array having a well-balanced color arrangement is formed.

In a solid-state imaging device having a general Bayer array as a primary color array, since RB and G are mixed in the same row, only G charges are independently read out to the vertical charge transfer channel. Can not do.

Based on the above considerations, a color imaging device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a plan view of a color imaging device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of FIG.
It is sectional drawing which follows the II 'line. FIG. 3 is a timing chart showing the operation of the control circuit included in the color imaging device.

In the present specification, the expression that the sampling points are arranged in a checkered pattern means that the positions of the photoelectric conversion elements to be read are in a checkered pattern. Even if a photoelectric conversion element is present in a checkered gap, the above expression is applied when a predetermined reading operation is performed and an operation of reading out electric charges from the photoelectric conversion element existing at the checkered position is possible. Things.

Further, in addition to the photoelectric conversion element having the first to third color filters, a photoelectric conversion element having other color filters may be present. Furthermore, "a first photoelectric conversion element row in which the first photoelectric conversion elements provided with the first color filters are arranged in a row direction at sampling points arranged in a checkered and matrix form, A column of a second photoelectric conversion element row in which a second photoelectric conversion element including a second color filter and a third photoelectric conversion element including a third color filter are alternately arranged in a row direction; The expression “sampling points including the direction alternating arrangement” does not necessarily apply to the color arrangement of the entire photoelectric conversion unit of the color imaging device, but it suffices if the color arrangement of a partial region applies to the above expression. This does not exclude the case where a certain percentage of photoelectric conversion elements having other color filters are present in a row in which the photoelectric conversion elements having the first color filter are arranged in the row direction.

FIG. 1 is a diagram showing a color arrangement of a honeycomb CCD color image pickup device. In this arrangement, the sampling points are arranged in a checkered pattern, the arrangement of the color filters is a G square lattice,
This is an array of R / B interpolation points in order. The respective arrangements of RGB are isotropic and have good color balance in plan view.

As shown in FIG. 1, in the color imaging apparatus A, only the G photoelectric conversion element (first photoelectric conversion element G) having the readout gate 3a on the two-dimensional plane 1 and having the green filter is provided. L1, L arranged in the direction
3, L5 and L7 (odd rows) are formed. Further, the color imaging device A includes an R photoelectric conversion element (second photoelectric conversion element R) having a readout gate 3b and a red filter and a B photoelectric conversion element (third photoelectric conversion element) having a readout gate 3c and a blue filter. Rows L2, L4, L6 and L8 in which the conversion elements B) are alternately arranged in the row direction
(Even line). These two types of photoelectric conversion element rows are alternately arranged in the column direction.

In the column direction, a column in which only the first photoelectric conversion elements G are arranged in the column direction, and a second photoelectric conversion element R and a third photoelectric conversion element B are alternately arranged in the column direction. Columns are alternately arranged in the row direction.

A plurality of vertical charge transfer channels 5 extending in the vertical direction are formed adjacent to each of the RGB photoelectric conversion elements so as to meander between the photoelectric conversion elements. On the vertical charge transfer channel 5, a plurality of first to fourth charge transfer electrodes 11a, 11b extending in a row direction (horizontal direction).
11c and 11d are formed so as to meander between the photoelectric conversion elements. A horizontal charge transfer channel 17 is formed at one end of the plurality of vertical charge transfer channels 5, and an output amplifier 21 is formed at one end thereof. The horizontal charge transfer channel 17 is a region 1 connected to the vertical charge transfer channel 15.
7a and a region 17b arranged between adjacent regions 17a
It is divided into and.

In FIG. 1, a pixel row L9 is an invalid area which does not contribute to imaging. The electrodes denoted by reference numerals T1 and T2 are charge transfer electrodes for transferring the charge in the vertical charge transfer channel 5 to the horizontal charge transfer channel 17.

The general structure of a solid-state image pickup device including a color image pickup device is described in US Patent Application No. 08/96.
No. 0,058, page 15, line 1 to page 16, line 13 and FIG. 1, the contents of which are incorporated herein by reference.

In the solid-state imaging device A shown in FIG.
A large number of charge transfer electrodes are provided on the vertical charge transfer channel 5 with the charge transfer electrodes 11a to 11d as one unit. 2 between adjacent photoelectric conversion element rows in the column direction
There are provided charge transfer electrodes. Therefore, four charge transfer electrodes are formed between the photoelectric conversion elements adjacent in the column direction, and all pixels can be read.

Read gate 3a of first photoelectric conversion element G
Is provided only in a region below the third charge transfer electrode 11c. The readout gates 3b and 3c for the second and third photoelectric conversion elements R and B are provided only in the region below the first charge transfer electrode 11a. That is, the first charge transfer electrode 11a and the third charge transfer electrode 11c also serve as charge readout electrodes and charge transfer electrodes.

The control circuit C has four signals from ΦV1 to ΦV4.
A phase pulse signal can be generated. From ΦV1 to Φ
Up to V4, the first charge transfer electrode 11a and the second
Is a pulse signal applied to the charge transfer electrode 11b, the third charge transfer electrode 11c, and the fourth charge transfer electrode 11d. The control circuit C also controls the timing for applying the pulse signal.

The control circuit C can apply a read pulse signal to both ΦV3 and ΦV1 at the same time, or can apply a read pulse signal independently to ΦV3 and ΦV1.

The control circuit C controls the third charge transfer electrode 11c.
When a high positive voltage (read voltage), for example, 15 V, is applied to (ΦV3), all the G signals arranged in the row and column directions are read into the vertical charge transfer channel 5.
The charge read into the vertical charge transfer channel 5 is the first charge
The fourth to fourth charge transfer electrodes 11a to 11d transfer in the vertical direction (column direction) by, for example, a four-phase driving method (ΦV1 to ΦV4), and finally transfer into the horizontal charge transfer channel 17. .

The charge signal transferred into the horizontal charge transfer channel 17 through the vertical charge transfer channel 5 is transferred in the horizontal charge transfer channel 17 by, for example, a two-phase driving method, and is output to the outside through the output amplifier 21. .

Next, the structure of the region including the photoelectric conversion element and the vertical charge transfer channel in the solid-state imaging device is shown in FIG.
This will be described with reference to FIG.

As shown in FIG. 2, a p-type semiconductor layer 23 is formed on an n-type semiconductor substrate 1. On the p-type semiconductor layer 31, an n-type semiconductor layer 2 and an n-type semiconductor layer 5 are formed. A photoelectric conversion element (photodiode) having a pn junction by the n-type semiconductor layer 2 and the p-type semiconductor layer 31
3 is formed.

In the above structure, a vertical overflow drain structure (VOFD structure) is formed. A substrate voltage adjuster Vsub is provided so that the potential of the semiconductor substrate 1 can be changed. Substrate voltage adjuster Vsu
When a high substrate voltage is applied to the semiconductor substrate 1 by b, the charge stored in the photoelectric conversion element 3 is drawn to the semiconductor substrate 1 side. It functions as a so-called electronic shutter. Note that the maximum charge amount that can be accumulated in the photoelectric conversion element 3 can be adjusted by changing the substrate voltage.

The n-type semiconductor layer 5 forms a vertical charge transfer channel for transferring charges stored in the photoelectric conversion element 3. On the vertical charge transfer channel 5, a first layer formed of polycrystalline silicon via a first layer insulating film 30a is formed.
And third charge transfer electrodes 11a and 11c. First and third charge transfer electrodes 11a and 11c
A second charge transfer electrode 11b and a fourth charge transfer electrode 11c are formed adjacent to the second charge transfer layer via a second layer insulating film 30b. These charge transfer electrodes 11a to 11d transfer the charge read from the electric conversion element 3 together with the vertical charge transfer channel 5 to the vertical charge for transferring the charge in the vertical charge transfer channel 5 to the horizontal charge transfer channel 17. A transfer path is formed.

The first to fourth charge transfer electrodes 11a to 11a
A first interlayer insulating film 3 on the semiconductor substrate 1 covering up to 1d
1 is formed. On the first interlayer insulating film 31, a conductive light-shielding film 41 having an opening on the light receiving surface of each photoelectric conversion element 3 is formed. The conductive light-shielding film 41 covers a non-light-receiving surface such as the vertical charge transfer path (5, 11a, 11b). A second interlayer insulating film (flattening film) 37 is formed so as to cover the insulating film 31 and the light shielding film 41. RGB color filters 45 and microlenses 51 are formed on the flattening film 37.

The light condensed by the microlens 51 enters the photoelectric conversion element 3. Conductive light shielding film 41
Reduces the influence of the incident light in the area other than the photoelectric conversion element 3.

A method of adjusting the effective exposure time of the first photoelectric conversion element G and the second and third photoelectric conversion elements RB will be described with reference to FIGS.

As shown in FIG. 3, until the time t1, the electronic shutter is off, that is, the substrate potential V
This is a state where the sub is raised. In this case, the charge in the photoelectric conversion element is extracted to the semiconductor substrate 1 (overflow drain) side, and the charge is not accumulated in the photoelectric conversion element.

When the electronic shutter is turned off at time t1, the accumulation of charges in the first to third photoelectric conversion elements RGB starts.

Here, a predetermined period (t2-
At a time t2 when t1) has elapsed, the photoelectric conversion elements 3 to the vertical charge transfer channel 5 with respect to the photoelectric conversion element rows L1, L3, L5, and L7 in FIG. Of the first charge read operation. More specifically, the control circuit C shown in FIG. 1 applies a positive high voltage as ΦV3 to the third charge transfer electrode 11c. The charges stored in the photoelectric conversion elements G in the solid-state imaging device are read out into the vertical charge transfer channels 5.

At time t3 when a predetermined period (t3-t2) has elapsed from time t2, photoelectric conversion elements L1 to L8 in FIG. 1, that is, photoelectric conversion elements G and RB, A second charge read operation from the conversion element to the vertical charge transfer channel is performed.
More specifically, the control circuit C shown in FIG. 1 applies positive high voltages as ΦV1 and ΦV3 to the first and third charge transfer electrodes 11a and 11c. The charges accumulated in all the photoelectric conversion elements RGB in the solid-state imaging device are read out into the vertical charge transfer channel 5.

The signal charge read into the vertical charge transfer channel 5 is, for example, 0 V and-with respect to the first to fourth charge transfer electrodes 11a to 11d after time t3.
By alternately applying a voltage of 8 V, charges can be transferred to the horizontal charge transfer channel.

During a certain period between the first read time t2 and the second read time t3, the G charge read in the first read operation is transferred as unnecessary charge from the vertical charge transfer channel to the horizontal charge transfer channel. It may be discharged to the outside via the charge transfer channel and the output amplifier. The G charge discharged to the outside is not subjected to signal processing and does not contribute to image formation. In FIG. 3, the discharge of the G charge is performed over the entire period from t2 to t3.
It may be performed only during a certain period in the period from 2 to t3.

The G and RB signals read at the second read time t3 undergo normal charge transfer operations and signal processing to form an image.

The time during which the photoelectric conversion element is irradiated with light and the electronic shutter is on so that the electric charge can be stored is constant in the photoelectric conversion element having any color filter. When the above operation is performed, in the second read operation, only the charges accumulated in the period from time t2 to time t3 are effectively read from the photoelectric conversion element G. Regarding the photoelectric conversion element RB, the time t1 to the time t
Charges accumulated throughout the period up to 3 are read.

The effective exposure time is (t3-t2) for the photoelectric conversion element G, whereas it is (t3-t1) for the photoelectric conversion element RB. The effective exposure time can be adjusted with the photoelectric conversion element G and the photoelectric conversion element RB.
In the above example, the effective exposure time of the photoelectric conversion element G is
This is shorter than the effective exposure time of the photoelectric conversion element RB.
The S / N ratio of the RB can be made (t3-t1) / (t3-t2) times as large as that of a general exposure method. Therefore, it is possible to adjust the S / N ratio of G and the S / N ratio of RB almost equally.

Next, a solid-state imaging device according to a modification of the embodiment of the present invention will be described with reference to FIG. FIG.
2 is a plan view of the solid-state imaging device, and is a diagram corresponding to FIG.

In the honeycomb CCD color imaging device shown in FIG. 4, the sampling points are arranged in a checkered pattern, similarly to the honeycomb CCD color imaging device according to the first embodiment.
However, unlike the honeycomb CCD color imaging device according to the first embodiment, the arrangement of the color filters is a G square lattice and R / B interpolation line sequential arrangement.

The arrangement of the G square lattice and the R / B interpolation line-sequential means a row (L) where only the photoelectric conversion elements G are arranged in one row.
1, L3, L5, and L7) and rows (L2, L4, L) in which photoelectric conversion elements R and photoelectric conversion elements B are alternately arranged.
6 and L8) are alternately arranged in the column direction.
A column in which only the photoelectric conversion elements G are arranged in one column, and a column in which only the same color pixels of any of the photoelectric conversion elements R or the photoelectric conversion elements B are arranged are alternately arranged in the row direction. A row in which only the photoelectric conversion elements R are arranged and a row in which only the photoelectric conversion elements B are arranged are alternately arranged via the photoelectric conversion element rows in which only the photoelectric conversion elements G are formed. Sequence.

In the above-mentioned honeycomb CCD color image pickup device, a photoelectric conversion element row in which only the photoelectric conversion elements G are lined up,
The charge can be read out separately from the photoelectric conversion element row in which only the photoelectric conversion elements RB are arranged. The arrangement of the color filters of the photoelectric conversion elements on the first and second rows is the same as that of the color imaging device according to the first embodiment.

The solid-state imaging device A also has a control circuit C similar to that of the solid-state imaging device according to the first embodiment. Therefore, the photoelectric conversion element G and the photoelectric conversion element RB can be read independently. By performing the same operation, the S / S of the signal read from the photoelectric conversion element G
N ratio and S of signal read from photoelectric conversion element R or B
It is also possible to adjust the / N ratio to be substantially equal.

In the above embodiment, the operation in the still image mode has been described as an example on the assumption that all pixels are read out. However, the color imaging technique according to the present embodiment is also applicable to the movie mode. It is possible.

For example, in the case of performing １ ／ thinning-out reading for reading out only one row out of four rows for each of the RB photoelectric conversion element rows and the G photoelectric conversion element rows, , G and RB photoelectric conversion element rows, the effective exposure time may be adjusted in the same manner as in the method described in the above embodiment.

In addition to the color filter color arrangement described in the above embodiment, there are many other color arrangements that can separate G and RB. These are also included in the category of the present invention. However, actually, the color arrangement described in the above embodiment is a color arrangement in which each of RGB is isotropically arranged (having a square lattice arrangement) on a plane.
Good color balance when expressed as a color image.

Although the embodiments of the present invention have been described above, they have no restrictive meaning.

It will be apparent to those skilled in the art that various changes, improvements, combinations, and the like can be made.

[0058]

In a color image pickup apparatus in which sampling points are arranged in a checkered pattern and the color filters are arranged in the order of R / B interpolation points or R / B interpolation lines,
The S / N ratio with B can be controlled to be constant. The S / N ratio of RB can be improved.

[Brief description of the drawings]

FIG. 1 shows a honeycomb C according to a first embodiment of the present invention.
FIG. 3 is a plan view showing a schematic structure of a CD color imaging device.

FIG. 2 shows a honeycomb C according to the first embodiment of the present invention.
FIG. 2 is a diagram illustrating a schematic structure of a CD color imaging device, and is a cross-sectional view taken along line II-II ′ of FIG.

FIG. 3 is a conceptual diagram illustrating a control method of a honeycomb CCD color imaging device according to a modification of the first embodiment of the present invention.

FIG. 4 shows a honeycomb C according to a second embodiment of the present invention.
FIG. 3 is a plan view showing a schematic structure of a CD color imaging device.

FIG. 5 is a plan view showing a schematic structure of a conventional CCD color imaging device.

[Explanation of symbols]

 A, color imaging device C control circuit G photoelectric conversion element having green color filter R photoelectric conversion element having red color filter B photoelectric conversion element having blue color filter 1 two-dimensional plane 3 photoelectric conversion element 3a readout gate (for G pixel 3b Readout gate (for RB pixel) 5 Vertical charge transfer channel 11a, 11b, 11c, 11d Charge transfer electrode 17 Horizontal charge transfer channel 21 Output amplifier

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4M118 AA06 AB01 BA13 CA03 CA20 DA12 DB03 DB08 DB09 FA07 FA13 FA33 GB08 GC08 GC14 GD04 5C065 AA03 BB22 CC01 DD07 DD11 DD17 EE05 EE06 EE10 EE11 GG14

Claims (7)

[Claims] 1. A first photoelectric conversion element, which is a sampling point arranged in a checkered and matrix form, wherein a first photoelectric conversion element having a first color filter is arranged in a row direction. A second photoelectric conversion element row in which a row and a second photoelectric conversion element having a second color filter and a third photoelectric conversion element having a third color filter are alternately arranged in the row direction A vertical charge transfer channel provided in correspondence with one of the photoelectric conversion element rows arranged in the column direction and extending in the column direction; and A first read gate formed between one photoelectric conversion element and the corresponding vertical charge transfer channel; and a first read gate formed between the second and third photoelectric conversion elements and the corresponding vertical charge transfer channel. A second read gate, A first charge transfer electrode formed on the vertical charge transfer channel and provided for at least one photoelectric conversion element row, the first charge transfer electrode covering the first readout gate; A charge transfer electrode including a second charge transfer electrode covering over the second readout gate; and a first charge transfer electrode after a first period elapses from an exposure start timing t1 at which charge accumulation in the photoelectric conversion element is started. At a read timing t2, a charge read pulse signal is applied to only one of the first charge transfer electrode and the second charge transfer electrode, and a second period elapses from the first read timing t2. At a later second read timing t3, a charge read pulse signal is applied to the first and second charge transfer electrodes, and the first read timing t2 And a signal for transferring the charge read out at the first read timing t2 to the outside as unnecessary charge via the vertical charge transfer channel within a certain period between the charge transfer and the second read timing t3. A color imaging device having a control circuit for applying an electrode. 2. The color filter according to claim 1, wherein the first color filter is a green color filter, one of the second and third color filters is a red color filter, and the other is a blue color filter. 3. The color imaging device according to item 1. 3. The control circuit according to claim 2, wherein the sensor sensitivity of the first photoelectric conversion element is S1, and the second and third sensors are
When the sensor sensitivities of the photoelectric conversion elements are S2 and S3, a read pulse signal is generated at a timing having a relationship between the exposure start time t1 and the first and second read timings t2 and t3 determined by the following equation. The color imaging device according to claim 1, which is a control circuit. S2 / S1 = (t3-t1) / (t3-t2) or S3
/ S1 = (t3-t1) / (t3-t2) 4. The color imaging device according to claim 1, wherein the first to third photoelectric conversion elements are isotropically arranged on a plane for each color. . 5. A first photoelectric conversion element row in which first photoelectric conversion elements having first color filters are arranged in a row direction at sampling points arranged in a checkered and matrix form. A second photoelectric conversion element row in which a second photoelectric conversion element including a second color filter and a third photoelectric conversion element including a third color filter are alternately arranged in a row direction;
And a vertical charge transfer channel provided in correspondence with the photoelectric conversion element columns arranged in the column direction and extending in the column direction, and the first photoelectric conversion element rows. Between the edge of a certain position of the photoelectric conversion element included in the second photoelectric conversion element row and the vertical charge transfer channel provided corresponding to the photoelectric conversion element column including each photoelectric conversion element. The first and second readout gates formed, and at least one charge transfer electrode provided for one row of the photoelectric conversion element row and extending in the row direction, wherein the first photoelectric conversion element row and the second A second charge transfer electrode including a first charge transfer electrode covering the first read gate and a second charge transfer electrode covering the second read gate. Color imaging device including A control method, wherein: (a) at the exposure start timing t1, a step of starting to accumulate charges in the photoelectric conversion element; and (b) a first period after a lapse of a first period from the exposure start timing t1. At the read timing t2, the first
(C) applying a charge readout pulse signal to only one of the charge transfer electrode and the second charge transfer electrode; and (c) transferring the signal charge read out in the step (b) to the vertical charge transfer channel. (D) discharging at a second read timing t3 after a lapse of a second period from the first read timing t2 to both of the first and second charge transfer electrodes. Applying a charge readout pulse signal. 6. The method according to claim 1, wherein the step (c) includes: a charge transfer pulse for transferring charge to the charge transfer electrode within a certain period between a first read timing t2 and a second read timing t3. The method for controlling a color imaging device according to claim 5, wherein the method is a step of applying a signal. 7. A first photoelectric conversion element row in which first photoelectric conversion elements having first color filters are arranged in a row direction at sampling points arranged in a checkered and matrix form. And a second photoelectric conversion element row in which a second photoelectric conversion element including a second color filter and a third photoelectric conversion element including a third color filter are alternately arranged in a row direction. The first photoelectric conversion element is provided at a sampling point including an alternate arrangement in the column direction and at a first read timing t2 after a lapse of a first period from an exposure start timing t1 at which charge accumulation in the photoelectric conversion element is started. The charge is read out from only one of the row and the second photoelectric conversion element row, and at the second read timing t3 after the lapse of a second period from the first read timing t2, the first and second rows are read. Performs charge read from both the second photoelectric conversion element row, and wherein the first read timing t2 the second read timing t
A control circuit for performing control to transfer the charge read out at the first read timing t2 as unnecessary charge to the outside during a certain period between the first and second color imaging devices.