JP2002280638A - Magnetoresistive element, memory element and memory cell using the same, and recording/reproducing method of memory element - Google Patents

Magnetoresistive element, memory element and memory cell using the same, and recording/reproducing method of memory element

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Publication number
JP2002280638A
JP2002280638A JP2001078470A JP2001078470A JP2002280638A JP 2002280638 A JP2002280638 A JP 2002280638A JP 2001078470 A JP2001078470 A JP 2001078470A JP 2001078470 A JP2001078470 A JP 2001078470A JP 2002280638 A JP2002280638 A JP 2002280638A
Authority
JP
Japan
Prior art keywords
magnetic layer
magnetic
magnetization
layer
magnetoresistive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001078470A
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Japanese (ja)
Other versions
JP3658331B2 (en
Inventor
Naoki Nishimura
直樹 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2001078470A priority Critical patent/JP3658331B2/en
Priority to US10/098,116 priority patent/US6713830B2/en
Priority to TW091105059A priority patent/TWI272610B/en
Priority to DE60216838T priority patent/DE60216838T2/en
Priority to EP02006094A priority patent/EP1244117B1/en
Priority to CNB021206007A priority patent/CN100490003C/en
Priority to KR10-2002-0014631A priority patent/KR100502113B1/en
Publication of JP2002280638A publication Critical patent/JP2002280638A/en
Application granted granted Critical
Publication of JP3658331B2 publication Critical patent/JP3658331B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn

Abstract

PROBLEM TO BE SOLVED: To provide a magnetoresistive element that is used as a magnetic memory element or the like, has a stable magnetization state, and can stably record information with low current consumption. SOLUTION: A first magnetic layer 1 that is magnetized in a film surface vertical direction, a first non-magnetic layer N1, a second magnetic layer 2 that is magnetized in the film surface vertical direction, a second non-magnetic layer N2, and a third magnetic layer N3 that is magnetized in a film surface vertical direction, are laminated in order. As each of non-magnetic layers N1 and N2, a spin tunnel insulating film is preferably used.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、不揮発性固体メモ
リなどに使用される磁気抵抗素子に関し、特に、２重ト
ンネル垂直磁化ＴＭＲ素子である磁気抵抗素子と、この
磁気抵抗素子を用いたメモリ素子及びメモリセルと、そ
のようなメモリ素子の記録再生方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive element used for a nonvolatile solid-state memory, and more particularly to a magnetoresistive element which is a double tunneling perpendicular magnetization TMR element and a memory element using the magnetoresistive element. And a memory cell and a method for recording and reproducing such a memory element.

【０００２】[0002]

【従来の技術】近年、磁気抵抗素子を用いた磁気メモリ
が盛んに研究されている。この磁気メモリ素子を用いた
メモリ装置として磁気ランダムアクセスメモリ（ＭＲＡ
Ｍ：Magnetic Random Access Memory）は、情報の保存
に磁性膜を用いているため、電源を落としても情報が消
えない、すなわち不揮発性であるという特徴を有してい
る。2. Description of the Related Art In recent years, magnetic memories using magnetoresistive elements have been actively studied. As a memory device using this magnetic memory element, a magnetic random access memory (MRA)
M: Magnetic Random Access Memory (M: Magnetic Random Access Memory) uses a magnetic film for storing information, and therefore has a feature that information is not erased even when the power is turned off, that is, it is nonvolatile.

【０００３】ＭＲＡＭのメモリセルには、スピントンネ
ル効果による磁気抵抗素子が設けられている。この素子
は、一般にＴＭＲ素子と呼ばれており、抵抗変化率（Ｍ
Ｒ比）が従来の磁気抵抗素子と比較して大きく、抵抗値
も数ＫΩから数十ＫΩとＭＲＡＭのメモリセルとして最
適な値に設定することが可能なため、ＭＲＡＭの記憶素
子として一般的に用いられている。A memory cell of an MRAM is provided with a magnetoresistive element based on a spin tunnel effect. This element is generally called a TMR element, and has a resistance change rate (M
R ratio) is larger than that of the conventional magnetoresistive element, and the resistance value can be set to several KΩ to several tens of KΩ, which is an optimum value for the memory cell of the MRAM. Used.

【０００４】ところが、このＴＭＲ素子は、素子にかか
るバイアス電圧が大きくなると、ＭＲ比が減少するとい
う特性を持ち合わせている。例えば、数ｍＶで５０％近
いＭＲ比が得られているが、５００ｍＶで約２０％にな
るといった報告がなされている。ＭＲＡＭでは、数１０
０ｍＶのバイアス電圧がＴＭＲ素子に印加されるため、
この減少率は無視できないレベルであり、検出感度を劣
化させることになる。However, this TMR element has a characteristic that the MR ratio decreases as the bias voltage applied to the element increases. For example, an MR ratio close to 50% is obtained at several mV, but it is reported that the MR ratio becomes approximately 20% at 500 mV. In MRAM,
Since a bias voltage of 0 mV is applied to the TMR element,
This reduction rate is not negligible, and degrades the detection sensitivity.

【０００５】このＴＭＲ素子のＭＲ比のバイアス電圧依
存性の課題に対する対策案として、絶縁層を２個設けた
ＴＭＲ素子を用いることが提案されている。例えば、特
開平９−２６０７４３号公報には、膜面内方向に磁化さ
れた磁性層を用いて、磁性層と絶縁層と磁性層と絶縁層
と磁性層の積層構造により、トンネル接合膜を作成した
素子が開示されている。図１１は絶縁層を２つ有する従
来のＴＭＲ素子の構成を示すものであり、（ａ）は二値
の記録の一方に対応する磁化状態を示し、（ｂ）は二値
の記録の他方に対応する磁化状態を示している。図中、
矢印は各磁性層の磁化の方向を示している。このＴＭＲ
素子は、面内磁化膜である第１磁性層１１、第１非磁性
層Ｎ１１、面内磁化膜である第２磁性層１２、第２非磁
性層Ｎ１２及び面内磁化膜である第３磁性層１３をこの
順に積層したものであって、各磁性層１１〜１３の保磁
力の差異を利用して、中央に位置する第２磁性層１２の
磁化方向を、より保磁力の高い第１磁性層１１及び第３
磁性層１３の磁化方向に対して平行にするか（ａ）、あ
るいは反平行にするか（ｂ）で、二値の情報を記憶し、
また、これら２つの状態間でトンネル膜の抵抗値に差が
できるようにして、記憶された情報を読み出せるように
する。As a countermeasure against the problem of the dependency of the MR ratio of the TMR element on the bias voltage, use of a TMR element provided with two insulating layers has been proposed. For example, Japanese Unexamined Patent Publication No. 9-260743 discloses that a tunnel junction film is formed by using a magnetic layer magnetized in a film plane direction and a laminated structure of a magnetic layer, an insulating layer, a magnetic layer, an insulating layer, and a magnetic layer. A disclosed device is disclosed. FIGS. 11A and 11B show a configuration of a conventional TMR element having two insulating layers. FIG. 11A shows a magnetization state corresponding to one of binary recordings, and FIG. The corresponding magnetization states are shown. In the figure,
Arrows indicate the direction of magnetization of each magnetic layer. This TMR
The elements are a first magnetic layer 11, a first non-magnetic layer N11 which is an in-plane magnetic film, a second magnetic layer 12, a second non-magnetic layer N12 which is an in-plane magnetic film, and a third magnetic layer which is an in-plane magnetic film. The layers 13 are stacked in this order, and the magnetization direction of the second magnetic layer 12 located at the center is changed by using the difference in the coercive force of each of the magnetic layers 11 to 13 so that the first magnetic layer having a higher coercive force is used. Layer 11 and third
Binary information is stored depending on whether the magnetization direction of the magnetic layer 13 is parallel (a) or antiparallel (b),
Further, the stored information can be read out by making a difference in the resistance value of the tunnel film between these two states.

【０００６】このような絶縁層を２個設けたＴＭＲ素子
は、通常のＴＭＲ素子を２個直列に接続するのと同じよ
うに、１つのトンネル障壁膜にかかるバイアス電圧が半
減するため、ＭＲ比のバイアス電圧による劣化が小さく
なるといった効果がある。In a TMR element provided with two such insulating layers, the bias voltage applied to one tunnel barrier film is reduced by half, as in the case of connecting two ordinary TMR elements in series. This has the effect of reducing deterioration due to the bias voltage.

【０００７】[0007]

【発明が解決しようとする課題】しかしながら、図１１
に示した従来の磁気抵抗素子は、バイアス電圧依存性に
対しては効果があるものの、素子サイズが小さくなると
磁化状態が不安定になるといった課題が生じる。これ
は、磁気抵抗素子に面内磁化膜を用いているために生
じ、特に図１１の（ａ）に示す磁化状態の場合には、各
磁性層の磁化が同じ方向を向くために、磁性膜の端面に
ある磁極による自己磁界（反磁界）が各層に印加され、
各層の磁化状態がより不安定となる。このために、
（ａ）に示す状態のように一方向に磁化配向させるため
には、磁化容易軸方向に磁性膜を長くするといった素子
形状の改良で対策を取ることが一般的である。これは、
素子サイズが大きくなり、メモリセル面積の増加、すな
わち、集積度の低下の原因となる。However, FIG.
Although the conventional magnetoresistive element shown in (1) has an effect on the bias voltage dependency, a problem arises in that the magnetization state becomes unstable as the element size decreases. This occurs because the in-plane magnetized film is used for the magnetoresistive element. In particular, in the case of the magnetized state shown in FIG. 11A, the magnetization of each magnetic layer is oriented in the same direction. The self-magnetic field (demagnetizing field) by the magnetic pole at the end face of is applied to each layer,
The magnetization state of each layer becomes more unstable. For this,
In order to orient the magnetization in one direction as in the state shown in (a), it is general to take measures by improving the element shape such as lengthening the magnetic film in the direction of the easy axis of magnetization. this is,
The element size increases, causing an increase in the memory cell area, that is, a reduction in the degree of integration.

【０００８】さらに、図１１の（ａ），（ｂ）の２つの
状態のうち、（ｂ）の状態は磁性層１１〜１３から出る
磁束が閉じるため、エネルギー的に安定な状態である。
しかし（ａ）の状態は、各磁性層１１〜１３の磁化が反
発しあうため、エネルギー的に高い状態にあり不安定で
ある。このため、磁化状態を（ｂ）から（ａ）にするの
に必要な磁界が、磁化状態を（ａ）から（ｂ）にするの
に必要な磁界よりも大きくなる。磁気メモリ素子におい
て、情報の記録のために磁性膜の磁化を反転させるため
には、書き込み線に電流を流してそこから発生する磁界
を磁性膜に印加する。このため、反転磁界が大きくなる
と、書き込み線には大きな電流を流す必要があり、全体
の消費電力が大きくなってしまう。また、磁化状態
（ａ）は、エネルギー的に不安定であるため、熱などの
影響で（ｂ）の状態に変わりやすい特性を有する。この
ため、情報の安定性に欠けることとなる。Further, of the two states shown in FIGS. 11A and 11B, the state shown in FIG. 11B is an energy stable state because the magnetic flux exiting from the magnetic layers 11 to 13 is closed.
However, in the state (a), since the magnetizations of the magnetic layers 11 to 13 repel each other, the state is energetically high and unstable. Therefore, the magnetic field required to change the magnetization state from (b) to (a) becomes larger than the magnetic field required to change the magnetization state from (a) to (b). In a magnetic memory element, in order to invert the magnetization of a magnetic film for recording information, a current is applied to a write line and a magnetic field generated therefrom is applied to the magnetic film. For this reason, when the reversal magnetic field increases, a large current needs to flow through the write line, and the overall power consumption increases. Further, the magnetization state (a) is unstable in terms of energy, and thus has a characteristic that easily changes to the state (b) due to heat or the like. Therefore, the information lacks stability.

【０００９】これらの不安定性や反転磁界の問題は、素
子サイズが小さくなるとより顕著になる傾向がある。し
たがって、従来提案された素子においては、集積度を高
くしようとすると、磁化状態が不安定になったり、反転
磁界が増加するといった課題があった。These problems of instability and switching field tend to be more pronounced as the element size decreases. Therefore, in the conventionally proposed device, there is a problem in that the magnetization state becomes unstable or the reversal magnetic field increases in order to increase the degree of integration.

【００１０】そこで本発明の目的は、磁化状態が安定で
あるとともに情報の記録を低消費電流で安定して行うこ
とができる磁気抵抗素子と、このような磁気抵抗素子を
用いたメモリ素子及びメモリセルと、これらのメモリ素
子に対する記録再生方法とを提供することにある。An object of the present invention is to provide a magnetoresistive element having a stable magnetization state and capable of stably recording information with low current consumption, a memory element using such a magnetoresistive element, and a memory. An object of the present invention is to provide a cell and a recording / reproducing method for these memory elements.

【００１１】[0011]

【課題を解決するための手段】上述した課題に鑑み、本
発明者は、磁気抵抗素子を構成する磁性膜として反磁界
エネルギーの小さい磁性膜を用い、さらに反平行磁化状
態のときと平行磁化状態のときとでエネルギー的に差異
の少ない媒体構成を用いることによって、上記課題を解
決することを見出し、本発明を完成させた。In view of the above-mentioned problems, the present inventor has used a magnetic film having a small demagnetizing field energy as a magnetic film constituting a magnetoresistive element, and furthermore, has employed a magnetic film having a parallel magnetization state and an antiparallel magnetization state. It has been found that the above-mentioned problems can be solved by using a medium configuration having a small difference in energy from that of the first embodiment, and the present invention has been completed.

【００１２】すなわち上記の目的は、（１）膜面垂直方
向に磁化した第１磁性層と、第１非磁性層と、膜面垂直
方向に磁化した第２磁性層と、第２非磁性層と、膜面垂
直方向に磁化した第３磁性層とが順に積層されたことを
特徴とする磁気抵抗素子、及び、（２）第１磁性層及び
第３磁性層の保磁力がいずれも第２磁性層の保磁力より
も大きい、（１）に記載の磁気抵抗素子、及び、（３）
第１磁性層及び第３磁性層の保磁力がいずれも第２磁性
層の保磁力よりも小さい、（１）に記載の磁気抵抗素
子、及び、（４）第１磁性層の磁化の向きと第３磁性層
の磁化の向きが反平行である、（３）に記載の磁気抵抗
素子、及び、（５）第１磁性層、第２磁性層及び第３磁
性層の少なくとも１つの磁性層が希土類−鉄族元素合金
からなる、上記記載の磁気抵抗素子、及び、（６）第１
磁性層及び第３磁性層の一方が鉄族元素副格子磁化優勢
な希土類鉄族合金膜であり、第１磁性層及び第３磁性層
の他方が希土類元素副格子磁化優勢な希土類鉄族合金膜
である、（５）に記載の磁気抵抗素子、及び、（７）第
１磁性層、第２磁性層及び第３磁性層の少なくとも１つ
がフェリ磁性層からなる、（１）〜（４）に記載の磁気
抵抗素子、及び、（８）フェリ磁性層がＧｂ，Ｔｂ、Ｄ
ｙの少なくとも１種を含む希土類元素とＦｅ，Ｃｏのう
ち少なくとも１種を含む鉄族元素とからなる、（７）に
記載の磁気抵抗素子、及び、（９）第１非磁性層及び第
２非磁性層が絶縁層からなる上記記載の磁気抵抗素子、
及び、（１０）第１磁性層と第１非磁性層の間、第２磁
性層と第１非磁性層の間、第２磁性層と第２非磁性層の
間、第２非磁性層と第３磁性層の間の少なくとも一つ
に、前記第１磁性層もしくは前記第２磁性層もしくは前
記第３磁性層よりもスピン分極率の高い磁性層が設けら
れている上記記載の磁気抵抗素子、及び、（１１）スピ
ン分極率の高い磁性層が、Ｆｅ，Ｃｏのうち少なくとも
１種を含む、（１０）に記載の磁気抵抗素子、及び、
（１２）スピン分極率の高い磁性層がＣｏＦｅからな
る、（１１）に記載の磁気抵抗素子、及び、（１３）
（２）に記載の磁気抵抗素子を用い、第１磁性層と第３
磁性層の磁化方向を一定にし、第２磁性層の磁化方向を
記録情報に応じて変化させるようにしたことを特徴とす
るメモリ素子、及び、（１４）（２）に記載の磁気抵抗
素子を用い、第１磁性層と第３磁性層の磁化方向を記録
情報に応じて変化させ、第２磁性層の磁化方向を読出し
時に反転させるようにしたことを特徴とするメモリ素
子、及び、（１５）（３）に記載の磁気抵抗素子を用
い、第２磁性層の磁化方向を一定にし、第１磁性層及び
第３磁性層の磁化方向を記録情報に応じて変化させるよ
うにしたことを特徴とするメモリ素子、及び、（１６）
（３）に記載の磁気抵抗素子を用い、第２磁性層の磁化
方向を記録情報に応じて変化させ、第１磁性層及び第３
磁性層の磁化方向を読出し時に反転させるようにしたこ
とを特徴とするメモリ素子、及び、（１７）上記記載の
磁気抵抗素子と、磁気抵抗素子の膜面に垂直方向の磁界
を発生する磁場発生手段とを有し、磁場発生手段を用い
て磁気抵抗素子に情報の記録を行うことを特徴とするメ
モリ素子、及び、（１８）（１７）に記載のメモリ素子
の磁気抵抗素子の一端を電界効果トランジスタのドレイ
ン領域に接続し、他端をビット線に接続したことを特徴
とするメモリセル、及び、（１９）（１３）に記載のメ
モリ素子の記録再生方法において、第２磁性層の磁化の
向きにより情報を記録し、メモリ素子の抵抗値により、
記録された情報の読出しを行うことを特徴とするメモリ
素子の記録再生方法、及び、（２０）（１４）に記載の
メモリ素子の記録再生方法において、第２磁性層の磁化
の向きにより情報を記録し、読出し時に、第１磁性層及
び第３磁性層の磁化の向きを反転させた際の抵抗値の変
化に基づいて、記録された情報を読み出すことを特徴と
するメモリ素子の記録再生方法、及び、（２１）（１
５）に記載のメモリ素子の記録再生方法において、第１
磁性層及び第３磁性層の磁化の向きにより情報を記録
し、メモリ素子の抵抗値により、記録された情報の読出
しを行うことを特徴とするメモリ素子の記録再生方法、
及び、（２２）（１６）に記載のメモリ素子の記録再生
方法において、第１磁性層及び前記第３磁性層の磁化の
向きにより情報を記録し、読出し時に、第２磁性層の磁
化の向きを反転させた際の抵抗値の変化に基づいて、記
録された情報を読み出すことを特徴とするメモリ素子の
記録再生方法、によって達成される。That is, the above objects are as follows: (1) a first magnetic layer magnetized in a direction perpendicular to the film surface, a first nonmagnetic layer, a second magnetic layer magnetized in a direction perpendicular to the film surface, and a second nonmagnetic layer. And a third magnetic layer magnetized in the direction perpendicular to the film surface in that order, and (2) both the first magnetic layer and the third magnetic layer have a coercive force of the second magnetic layer. The magnetoresistive element according to (1), which is larger than the coercive force of the magnetic layer, and (3)
(1) the coercive force of the first magnetic layer and the coercive force of the third magnetic layer are both smaller than the coercive force of the second magnetic layer; and (4) the direction of magnetization of the first magnetic layer. The magnetoresistance element according to (3), wherein the magnetization direction of the third magnetic layer is antiparallel, and (5) at least one of the first magnetic layer, the second magnetic layer, and the third magnetic layer is The magnetoresistive element described above, comprising a rare earth-iron group element alloy, and (6) a first element.
One of the magnetic layer and the third magnetic layer is a rare earth iron group alloy film in which the iron group element sublattice magnetization is dominant, and the other of the first magnetic layer and the third magnetic layer is a rare earth iron group alloy film in which the rare earth element sublattice magnetization is dominant. And (7) at least one of the first magnetic layer, the second magnetic layer, and the third magnetic layer comprises a ferrimagnetic layer. And (8) the ferrimagnetic layer is composed of Gb, Tb, D
(7) The magnetoresistive element according to (7), comprising a rare earth element containing at least one of y and an iron group element containing at least one of Fe and Co, and (9) a first nonmagnetic layer and a second nonmagnetic layer. The magnetoresistive element according to the above, wherein the nonmagnetic layer comprises an insulating layer,
And (10) between the first magnetic layer and the first non-magnetic layer, between the second magnetic layer and the first non-magnetic layer, between the second magnetic layer and the second non-magnetic layer, and The magnetoresistive element according to the above, wherein a magnetic layer having a higher spin polarizability than the first magnetic layer, the second magnetic layer, or the third magnetic layer is provided at least between the third magnetic layers. And (11) the magnetoresistive element according to (10), wherein the magnetic layer having a high spin polarizability contains at least one of Fe and Co;
(12) The magnetoresistive element according to (11), wherein the magnetic layer having a high spin polarizability is made of CoFe; and (13)
The first magnetic layer and the third magnetic layer are formed by using the magnetoresistive element described in (2).
The memory element wherein the magnetization direction of the magnetic layer is made constant and the magnetization direction of the second magnetic layer is changed in accordance with the recorded information, and the magnetoresistive element described in (14) and (2). (15) a memory element wherein the magnetization directions of the first magnetic layer and the third magnetic layer are changed in accordance with recording information, and the magnetization direction of the second magnetic layer is inverted at the time of reading; And (3) using the magnetoresistive element described in (3), wherein the magnetization direction of the second magnetic layer is made constant, and the magnetization directions of the first magnetic layer and the third magnetic layer are changed according to recorded information. A memory element, and (16)
Using the magnetoresistive element described in (3), the magnetization direction of the second magnetic layer is changed according to the recorded information, and the first magnetic layer and the third
A memory element wherein the magnetization direction of the magnetic layer is inverted at the time of reading; and (17) the magnetoresistive element described above, and a magnetic field generation for generating a magnetic field in a direction perpendicular to the film surface of the magnetoresistive element Means for recording information on the magnetoresistive element using the magnetic field generating means, and one end of the magnetoresistive element of the memory element described in (18) or (17). In the memory cell, wherein the drain is connected to the drain region of the effect transistor and the other end is connected to the bit line, and the method of recording / reproducing a memory element according to any one of (19) and (13), the magnetization of the second magnetic layer The information is recorded according to the direction of the
In the recording / reproducing method for a memory element, which reads recorded information, and the recording / reproducing method for a memory element according to any one of (20) and (14), information is read by the direction of magnetization of the second magnetic layer. A recording / reproducing method for a memory element, comprising: reading recorded information based on a change in resistance value when the magnetization directions of the first magnetic layer and the third magnetic layer are reversed during recording and reading. , And (21) (1
5) The method for recording / reproducing a memory element according to the item 5),
Recording / reproducing a memory element, wherein information is recorded by the magnetization directions of the magnetic layer and the third magnetic layer, and the recorded information is read by the resistance value of the memory element;
And (22) In the recording / reproducing method of the memory element according to (16), information is recorded by the magnetization directions of the first magnetic layer and the third magnetic layer, and at the time of reading, the magnetization direction of the second magnetic layer is read. And a method for reading and writing recorded information based on a change in resistance value when the data is inverted.

【００１３】[0013]

【発明の実施の形態】次に、本発明の好ましい実施の形
態について、図面を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a preferred embodiment of the present invention will be described with reference to the drawings.

【００１４】（第１の実施形態）図１は、本発明の第１
の実施形態の磁気抵抗素子の構造の一例を示したもので
ある。図中矢印は各磁性層の磁化方向を示しており、ま
た、（ａ），（ｂ）はこの磁気抵抗素子が安定してとり
える２つの磁化状態のそれぞれを示している。(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
13 shows an example of the structure of the magnetoresistive element of the embodiment. The arrows in the figure indicate the magnetization direction of each magnetic layer, and (a) and (b) indicate the two magnetization states that this magnetoresistive element can stably take.

【００１５】この磁気抵抗素子は、膜面垂直方向に磁化
した第１磁性層１と、第１非磁性層Ｎ１と、膜面垂直方
向に磁化した第２磁性層２と、第２非磁性層Ｎ２と、膜
面垂直方向に磁化した第３磁性層３と、を順に積層して
構成したものである。図示（ａ）の状態では、全ての磁
性層１〜３の磁化は上向きであり、（ｂ）の状態では、
第２磁性層２のみが下向きの磁化となっている。各非磁
性層Ｎ１，Ｎ２としては絶縁層が用いられる。これらの
非磁性層Ｎ１，Ｎ２はトンネル電流が流れる程度の厚さ
であって、スピントンネル効果によってそのトンネル抵
抗値が変化するようになっている。ここでは絶縁層であ
る非磁性層が２層設けられており、各磁性層が垂直磁化
膜によって構成されているから、このような磁気抵抗素
子のことを２重トンネル垂直磁化ＴＭＲ素子とも呼ぶ。
この素子の膜厚方向に電流を流すと、（ａ）の状態では
磁化が平行の状態なので抵抗は小さいが、（ｂ）の状態
では、第１磁性層１と第２磁性層２の磁化が反平行、第
２磁性層２と第３磁性層３の磁化も反平行のため、抵抗
が大きくなる。This magnetoresistive element has a first magnetic layer 1 magnetized in a direction perpendicular to the film surface, a first nonmagnetic layer N1, a second magnetic layer 2 magnetized in a direction perpendicular to the film surface, and a second nonmagnetic layer. N2 and a third magnetic layer 3 magnetized in the direction perpendicular to the film surface are sequentially laminated. In the state shown in FIG. 3A, the magnetizations of all the magnetic layers 1 to 3 are upward, and in the state shown in FIG.
Only the second magnetic layer 2 has a downward magnetization. An insulating layer is used as each of the nonmagnetic layers N1 and N2. These nonmagnetic layers N1 and N2 are thick enough to allow a tunnel current to flow, and their tunnel resistance changes due to the spin tunnel effect. Here, two nonmagnetic layers, which are insulating layers, are provided, and each magnetic layer is constituted by a perpendicular magnetization film. Therefore, such a magnetoresistance element is also called a double tunneling perpendicular magnetization TMR element.
When a current flows in the film thickness direction of this element, the resistance is small in the state (a) because the magnetization is parallel, but in the state (b), the magnetizations of the first magnetic layer 1 and the second magnetic layer 2 are changed. Since the magnetizations of the second magnetic layer 2 and the third magnetic layer 3 are antiparallel and antiparallel, the resistance increases.

【００１６】このように絶縁層を２個含んだＴＭＲ素子
では、素子の上下に印加した電圧の１／２の電圧が個々
の絶縁層に印加される。このため、ＭＲ比のバイアス電
圧依存性は軽減され、ＭＲ比の劣化を抑えることが可能
となる。As described above, in a TMR element including two insulating layers, a voltage that is 1/2 of the voltage applied above and below the element is applied to each insulating layer. Therefore, the dependency of the MR ratio on the bias voltage is reduced, and deterioration of the MR ratio can be suppressed.

【００１７】また垂直磁化膜は、一般に反磁界エネルギ
ーが小さく、磁化の大きさが面内磁化膜と比較して小さ
い。したがって、この磁気抵抗素子によれば、積層され
た各磁性層の磁化から他の磁性層にかかる磁界の大きさ
を小さくすることができ、容易に、反平行磁化状態とす
ることができる。また、外部磁界がない場合に他の磁性
層にかかる磁界を低減できるため、ＭＲカーブ（抵抗と
印加磁界の関係を示したグラフ）が漏洩磁界分だけずれ
るシフト量が小さくなる。このシフト磁界（オフセット
磁界）が低減できることは、すなわち、反転磁界の増大
を抑制できることであり、これにより、消費電力を抑制
することが可能となる。In addition, the perpendicular magnetization film generally has a small demagnetizing field energy, and the magnitude of magnetization is smaller than that of the in-plane magnetization film. Therefore, according to this magnetoresistive element, the magnitude of the magnetic field applied to the other magnetic layers from the magnetization of each of the stacked magnetic layers can be reduced, and the antiparallel magnetization state can be easily achieved. Further, since the magnetic field applied to the other magnetic layers can be reduced in the absence of an external magnetic field, the shift amount by which the MR curve (a graph showing the relationship between the resistance and the applied magnetic field) is shifted by the leakage magnetic field is reduced. The fact that the shift magnetic field (offset magnetic field) can be reduced means that the increase of the reversal magnetic field can be suppressed, whereby power consumption can be suppressed.

【００１８】（第２の実施形態）図１に示したような第
２磁性層２の磁化方向のみが変化した磁化状態は、第１
の実施形態に示す層構成において、第１磁性層１と第３
磁性層３の保磁力を第２磁性層２の保磁力よりも高く設
定することにより実現できる。すなわち、この素子に対
し第１磁性層１及び第３磁性層３の保磁力よりも大きな
磁界を印加してこれらの磁性層の向きを配向させた後、
これより小さな磁界を印加して第２磁性層２の磁化の向
きを変更することによって、実現される。この素子にお
いては、外部磁界によって第２磁性層２の磁化方向を変
えることで、スピントンネル効果による素子抵抗値を大
きくしたり小さくしたりすることができる。(Second Embodiment) The magnetization state in which only the magnetization direction of the second magnetic layer 2 as shown in FIG.
In the layer configuration shown in the embodiment, the first magnetic layer 1 and the third magnetic layer 1
This can be realized by setting the coercive force of the magnetic layer 3 higher than the coercive force of the second magnetic layer 2. That is, after applying a magnetic field larger than the coercive force of the first magnetic layer 1 and the third magnetic layer 3 to the element to orient these magnetic layers,
This is realized by changing the direction of magnetization of the second magnetic layer 2 by applying a smaller magnetic field. In this device, by changing the magnetization direction of the second magnetic layer 2 by an external magnetic field, the device resistance value due to the spin tunnel effect can be increased or decreased.

【００１９】（第３の実施形態）第２の実施形態とは逆
に、第１の実施形態に示す層構成において第１磁性層１
と第３磁性層３の保磁力を第２磁性層２の保磁力よりも
低く設定すれば、図２に示すように、第２磁性層２の磁
化方向を固定したまま、第１磁性層１及び第３磁性層３
の磁化の方向を外部磁界によって変化させることができ
る。これにより、図２の（ａ）に示す低抵抗状態と
（ｂ）に示す高抵抗状態とを作ることができる。(Third Embodiment) Contrary to the second embodiment, the first magnetic layer 1 in the layer configuration shown in the first embodiment is different from that of the first embodiment.
When the coercive force of the third magnetic layer 3 is set lower than the coercive force of the second magnetic layer 2, the first magnetic layer 1 is kept fixed with the magnetization direction of the second magnetic layer 2 as shown in FIG. And the third magnetic layer 3
Can be changed by the external magnetic field. Thus, a low resistance state shown in FIG. 2A and a high resistance state shown in FIG. 2B can be created.

【００２０】（第４の実施形態）第２の実施形態の磁気
抵抗素子において、第１磁性層１と第３磁性層３の磁化
方向を一定にし、第２磁性層２の磁化方向を記録情報に
応じて変化させ、読出し時に抵抗値を検出すれば、メモ
リ素子として機能させることができる。(Fourth Embodiment) In the magnetoresistive element according to the second embodiment, the magnetization directions of the first magnetic layer 1 and the third magnetic layer 3 are kept constant, and the magnetization direction of the second magnetic layer 2 is recorded information. If the resistance value is detected at the time of reading, it can function as a memory element.

【００２１】（第５の実施形態）第２の実施形態に示す
磁気抵抗素子において、第１磁性層１と第３磁性層３の
磁化方向を記録情報に応じて変化させ、第２磁性層の磁
化方向を読出し時に反転させることとすれば、メモリ素
子とすることができる。図３にその例を示した。図３に
おいて、（ａ−１）及び（ａ−２）では、第１磁性層１
及び第３磁性層３が上向きに記録されており、一方、
（ｂ−１）及び（ｂ−２）では下向きに記録されてお
り、それぞれが、“０”，“１”の二値のデータに相当
する。（ａ−１）及び（ａ−２）の違いは、第２磁性層
２の磁化の方向である。（ｂ−１）及び（ｂ−２）の違
いも、第２磁性層２の磁化の方向である。各々の場合に
ついてもいずれも、まず、素子に上向きの磁界を印加し
たのち、下向きの磁界を印加するものとする。この際の
磁界は、第２磁性層２の磁化のみが反転するように、第
２磁性層２の保磁力よりも大きく、第１磁性層１及び第
３磁性層３の保磁力よりも小さく設定する。第１磁性層
１及び第３磁性層３が上向きに記録されている場合は、
抵抗値については、（ａ−１）が低い状態、（ａ−２）
が高い状態であるため、高い状態から低い状態へ遷移す
るが、第１磁性層１及び第３磁性層３が下向きに記録さ
れている場合は、抵抗値については、（ｂ−１）が高い
状態、（ｂ−２）が低い状態であるため、低い状態から
高い状態に遷移する。このような抵抗値の状態の変化を
センシングすれば、記録されている情報を読み出すこと
ができる。(Fifth Embodiment) In the magnetoresistive element shown in the second embodiment, the magnetization directions of the first magnetic layer 1 and the third magnetic layer 3 are changed according to the recorded information, If the magnetization direction is reversed at the time of reading, a memory element can be obtained. FIG. 3 shows an example. In FIG. 3, in (a-1) and (a-2), the first magnetic layer 1
And the third magnetic layer 3 is recorded upward, while
In (b-1) and (b-2), data is recorded downward, and each corresponds to binary data of “0” and “1”. The difference between (a-1) and (a-2) is the direction of magnetization of the second magnetic layer 2. The difference between (b-1) and (b-2) is also the direction of magnetization of the second magnetic layer 2. In each case, an upward magnetic field is first applied to the element, and then a downward magnetic field is applied. The magnetic field at this time is set to be larger than the coercive force of the second magnetic layer 2 and smaller than the coercive force of the first magnetic layer 1 and the third magnetic layer 3 so that only the magnetization of the second magnetic layer 2 is reversed. I do. When the first magnetic layer 1 and the third magnetic layer 3 are recorded upward,
Regarding the resistance value, (a-1) is low, (a-2)
Is a high state, the state transitions from a high state to a low state. However, when the first magnetic layer 1 and the third magnetic layer 3 are recorded downward, the resistance value (b-1) is high. Since the state (b-2) is a low state, the state transits from a low state to a high state. By sensing such a change in the state of the resistance value, recorded information can be read.

【００２２】（第６の実施形態）第３の実施形態３の磁
気抵抗素子において、第２磁性層２の磁化方向を一定に
し、第１磁性層１と第３磁性層３の磁化方向を記録情報
に応じて変化させ、読出し時に抵抗値を検出すれば、メ
モリ素子として機能させることができる。(Sixth Embodiment) In the magnetoresistive element of the third embodiment, the magnetization direction of the second magnetic layer 2 is kept constant, and the magnetization directions of the first magnetic layer 1 and the third magnetic layer 3 are recorded. If the resistance is changed according to the information and the resistance value is detected at the time of reading, it can function as a memory element.

【００２３】（第７の実施形態）第３の実施形態の磁気
抵抗素子において、第２磁性層２の磁化方向を記録情報
に応じて変化させ、第１磁性層１及び第３磁性層３の磁
化方向をいずれも読出し時に反転させることとすれば、
この磁気抵抗素子をメモリ素子に応用することができ
る。図４にその例を示した。図４において、（ａ−
１），（ａ−２）は第２磁性層２が上向きの状態を示
し、これら両者の違いは、第１磁性層１及び第３磁性層
３の磁化がいずれも上向きか下向きかである。また、
（ｂ−１），（ｂ−２）では第２磁性層２が下向きに記
録されており、両者は、第１磁性層１及び第３磁性層３
の磁化がいずれも上向きか下向きかで相違している。
（ａ−１），（ａ−２）は“０”，“１”の二値データ
の一方に対応し、（ｂ−１），（ｂ−２）は他方に対応
する。(Seventh Embodiment) In the magnetoresistive element of the third embodiment, the magnetization direction of the second magnetic layer 2 is changed in accordance with the recorded information, and the first magnetic layer 1 and the third magnetic layer 3 If both magnetization directions are reversed at the time of reading,
This magnetoresistive element can be applied to a memory element. FIG. 4 shows an example thereof. In FIG. 4, (a-
1) and (a-2) show a state where the second magnetic layer 2 is upward, and the difference between the two is that the magnetizations of the first magnetic layer 1 and the third magnetic layer 3 are both upward or downward. Also,
In (b-1) and (b-2), the second magnetic layer 2 is recorded downward, and both of them are the first magnetic layer 1 and the third magnetic layer 3.
Are different depending on whether the magnetization is upward or downward.
(A-1) and (a-2) correspond to one of the binary data "0" and "1", and (b-1) and (b-2) correspond to the other.

【００２４】この実施形態においても、第５の実施形態
の場合と同様に、まず、素子に上向きの磁界を印加した
のち、下向きの磁界を印加するものとする。この際の磁
界は、第１磁性層１及び第３磁性層の磁化が反転し第２
磁性層の磁化が反転しないように、第２磁性層２の保磁
力よりも小さく、第１磁性層１及び第３磁性層３の保磁
力よりも大きく設定する。そして、第５の実施形態と同
様にして抵抗値の状態の変化をセンシングすれば、記録
されている情報を読み出すことができる。In this embodiment, as in the fifth embodiment, an upward magnetic field is first applied to the element, and then a downward magnetic field is applied. The magnetic field at this time is such that the magnetizations of the first magnetic layer 1 and the third magnetic layer are
The coercive force is set smaller than the coercive force of the second magnetic layer 2 and larger than the coercive force of the first magnetic layer 1 and the third magnetic layer 3 so that the magnetization of the magnetic layer is not reversed. Then, by sensing a change in the state of the resistance value in the same manner as in the fifth embodiment, recorded information can be read.

【００２５】（第８の実施形態）第２の実施形態の磁気
抵抗素子において、第１磁性層１の磁化の向きと第３磁
性層３の磁化の向きを反平行にすることによって、第２
磁性層２に印加される漏洩磁界を低減することができ
る。図５にこの素子構成を示した。図中、第１磁性層１
及び第３磁性層３中の矢印のうち、外側の白抜きの矢印
はその磁性層の総体としての磁化の向きを示しており、
内側の黒実線の矢印は、磁気抵抗効果に影響を与える副
格子磁化の向きを示している。(Eighth Embodiment) In the magnetoresistive element of the second embodiment, the direction of magnetization of the first magnetic layer 1 and the direction of magnetization of the third magnetic layer 3 are made antiparallel so that the second
The leakage magnetic field applied to the magnetic layer 2 can be reduced. FIG. 5 shows this element configuration. In the figure, the first magnetic layer 1
Of the arrows in the third magnetic layer 3, the outer white arrow indicates the direction of magnetization as a whole of the magnetic layer,
The black solid line arrows inside indicate the direction of the sublattice magnetization that affects the magnetoresistance effect.

【００２６】第１磁性層１と第３磁性層３の磁化は反平
行であるため、これらの磁性層の磁化から第２磁性層に
印加される漏洩磁界は、相互に打ち消しあって弱まる。
このため、第２磁性層２は、他の磁性層からの結合力を
受けない単層膜のように振舞うことができ、反転磁界の
増大やシフトなどをなくすことができる。Since the magnetizations of the first magnetic layer 1 and the third magnetic layer 3 are antiparallel, the leakage magnetic fields applied to the second magnetic layer from the magnetizations of these magnetic layers cancel each other out and weaken.
For this reason, the second magnetic layer 2 can behave like a single-layer film that does not receive a coupling force from another magnetic layer, and can prevent an increase or a shift of a reversal magnetic field.

【００２７】（第９の実施形態）第８の実施形態の磁気
抵抗素子を実現するためには、第１磁性層１を鉄族元素
副格子磁化優勢な希土類鉄族合金膜とし、第３磁性層を
希土類元素副格子磁化優勢な希土類鉄族合金膜とすれば
よい。希土類鉄族合金膜は、希土類元素の副格子磁化と
鉄族元素の副格子磁化が反平行であるフェリ磁性体であ
って、正味の磁化は、これらの副格子磁化の差となる。
また、磁気抵抗に起因するのは、主に鉄族元素の副格子
磁化である。よって、どちらかの磁性層を鉄族元素副格
子磁化優勢、他の磁性層を希土類元素副格子磁化優勢と
すれば、正味の磁化と磁気抵抗に起因する磁化の方向を
反平行にしたりすることが可能である。(Ninth Embodiment) In order to realize the magnetoresistive element of the eighth embodiment, the first magnetic layer 1 is made of a rare earth iron group alloy film in which the iron group element sublattice magnetization is dominant, and the third magnetic layer 1 is made of a third magnetic layer. The layer may be a rare earth iron group alloy film in which rare earth element sublattice magnetization is dominant. The rare earth iron group alloy film is a ferrimagnetic material in which the sublattice magnetization of the rare earth element and the sublattice magnetization of the iron group element are antiparallel, and the net magnetization is the difference between these sublattice magnetizations.
Further, what is caused by the magnetoresistance is mainly the sublattice magnetization of the iron group element. Therefore, if one of the magnetic layers is predominant in iron group element sublattice magnetization and the other magnetic layer is predominant in rare earth element sublattice magnetization, the direction of the net magnetization and the magnetization due to magnetoresistance can be made antiparallel. Is possible.

【００２８】また、第１磁性層１を希土類元素副格子磁
化優勢、第３磁性層３を鉄族元素副格子磁化優勢として
もよい。Further, the first magnetic layer 1 may have a rare earth element sublattice magnetization dominance, and the third magnetic layer 3 may have an iron group element sublattice magnetization dominance.

【００２９】（第１０の実施形態）本発明の磁気抵抗素
子における各非磁性層Ｎ１，Ｎ２は、巨大磁気抵抗効果
（ＧＭＲ効果）がおきるようにＣｕなどの良導体にして
もよいし、スピントンネル効果がおきるようにＡｌ2Ｏ3
などの絶縁体にしてもよい。しかし、スピントンネル効
果の方がＧＭＲ効果より磁気抵抗変化率が大きく、ＭＲ
ＡＭのメモリセルに適した抵抗値に設定することが可能
なため、スピントンネル効果がおきるようにすることが
好ましい。すなわち、第１非磁性層Ｎ１及び第２非磁性
層Ｎ２の両方が絶縁層からなることが望ましい。(Tenth Embodiment) Each of the nonmagnetic layers N1 and N2 in the magnetoresistive element of the present invention may be made of a good conductor such as Cu so as to have a giant magnetoresistance effect (GMR effect), or a spin tunnel. Al 2 O 3
Or the like. However, the spin tunnel effect has a larger magnetoresistance change rate than the GMR effect,
Since it is possible to set a resistance value suitable for the memory cell of the AM, it is preferable that a spin tunnel effect occurs. That is, it is desirable that both the first nonmagnetic layer N1 and the second nonmagnetic layer N2 are formed of insulating layers.

【００３０】（第１１の実施形態）本発明において、磁
気抵抗素子を構成する垂直磁化膜である第１磁性層、第
２磁性層及び第３磁性層は、膜面垂直方向に磁化しかつ
磁気抵抗効果をもたらすものならどのようなものでも使
用できる。そのような垂直磁化膜として、例えば、希土
類鉄族合金膜、ＣｏＣｒ合金膜、ガーネット膜などを使
用することができる。中でも、希土類−鉄族元素合金
は、室温で成膜後に容易に垂直磁化膜となる点、アモル
ファス合金のため結晶粒界の悪影響がない点などから好
ましい。したがって、第１磁性層１、第２磁性層２及び
第３磁性層３の全てを希土類元素と鉄族元素との合金か
らなるフェリ磁性膜とすることが好ましい。(Eleventh Embodiment) In the present invention, the first magnetic layer, the second magnetic layer, and the third magnetic layer, which are the perpendicular magnetic films constituting the magnetoresistive element, are magnetized in the direction perpendicular to the film surface and are magnetic. Anything that produces a resistance effect can be used. As such a perpendicular magnetization film, for example, a rare earth iron group alloy film, a CoCr alloy film, a garnet film, or the like can be used. Among them, a rare earth-iron group element alloy is preferable because it easily becomes a perpendicular magnetization film after film formation at room temperature, and there is no adverse effect of crystal grain boundaries due to an amorphous alloy. Therefore, it is preferable that all of the first magnetic layer 1, the second magnetic layer 2, and the third magnetic layer 3 are ferrimagnetic films made of an alloy of a rare earth element and an iron group element.

【００３１】希土類鉄族合金膜として、本発明における
第１磁性層１、第２磁性層２及び第３磁性層３に使用で
きるものとして、例えば、ＧｄＦｅ，ＧｄＦｅＣｏ，Ｔ
ｂＦｅ，ＴｂＦｅＣｏ，ＤｙＦｅ，ＤｙＦｅＣｏなどが
挙げられる。これらの磁性膜は、垂直磁気異方性が、Ｇ
ｄ，Ｄｙ，Ｔｂを含む順に大きくなる傾向がある。この
ため、保磁力の高い層にはＴｂＦｅ，ＴｂＦｅＣｏなど
を用いるのがよく、保磁力の低い層にはＧｄＦｅもしく
はＧｄＦｅＣｏを用いるのがよい。Examples of the rare earth iron group alloy film that can be used for the first magnetic layer 1, the second magnetic layer 2 and the third magnetic layer 3 in the present invention include, for example, GdFe, GdFeCo, T
bFe, TbFeCo, DyFe, DyFeCo and the like. These magnetic films have perpendicular magnetic anisotropy of G
It tends to increase in the order including d, Dy, and Tb. Therefore, it is preferable to use TbFe, TbFeCo or the like for the layer having a high coercive force, and to use GdFe or GdFeCo for the layer having a low coercive force.

【００３２】また，第１磁性層、第２磁性層、第３磁性
層の膜厚は、２ｎｍから１μｍまでの範囲が良い。これ
は，２ｎｍより薄くなると磁化を一方向に保存しておく
ことが容易でなくなるためである。１μｍより厚くなる
と加工が難しい、ラフネスが大きくなってトンネル障壁
膜がショートする、などの製造プロセスの問題が発生す
るためであり、好ましくは１００ｎｍ以下が良い。さら
に望ましくは，５ｎｍ以上５０ｎｍ以下がよい。The thicknesses of the first, second, and third magnetic layers are preferably in the range of 2 nm to 1 μm. This is because when the thickness is less than 2 nm, it is not easy to store the magnetization in one direction. If the thickness is more than 1 μm, it is difficult to process, and a problem of a manufacturing process such as an increase in roughness and a short circuit of a tunnel barrier film occurs. Preferably, the thickness is 100 nm or less. More preferably, the thickness is 5 nm or more and 50 nm or less.

【００３３】図６は、希土類元素と鉄族元素の合金から
なるフェリ磁性膜を用いた本発明に基づく磁気抵抗素子
の磁化状態を示したものである。層構成自体は第１の実
施形態のものと同様である。第１磁性層１及び第３磁性
層３における実線は鉄族元素（ＴＥ）の副格子磁化の向
きを示し、点線は希土類元素（ＲＥ）の副格子磁化の向
きを示している。図６は、第１磁性層１及び第３磁性層
３の磁化の方向が一定であって第２磁性層２の磁化方向
を反転させる場合を示している。FIG. 6 shows a magnetization state of a magnetoresistive element according to the present invention using a ferrimagnetic film made of an alloy of a rare earth element and an iron group element. The layer configuration itself is the same as that of the first embodiment. The solid lines in the first magnetic layer 1 and the third magnetic layer 3 indicate the direction of the sublattice magnetization of the iron group element (TE), and the dotted lines indicate the direction of the sublattice magnetization of the rare earth element (RE). FIG. 6 shows a case where the magnetization directions of the first magnetic layer 1 and the third magnetic layer 3 are constant and the magnetization direction of the second magnetic layer 2 is reversed.

【００３４】交換結合力に関して鉄族元素の交換力が希
土類元素の交換力よりも強いので、磁性層間の交換結合
力には主に鉄族元素が寄与する。図６の（ａ）では鉄族
元素副格子磁化が平行となっており、スピントンネル効
果における低抵抗状態となっている。（ｂ）では、第１
磁性層１と第２磁性層２の間、及び、第２磁性層２と第
３磁性層３の間では反平行磁化状態となっており、高抵
抗状態となっている。Since the exchange force of the iron group element is stronger than that of the rare earth element with respect to the exchange coupling force, the iron group element mainly contributes to the exchange coupling force between the magnetic layers. In FIG. 6A, the iron-group element sublattice magnetization is parallel, and a low resistance state due to the spin tunnel effect is obtained. In (b), the first
Between the magnetic layer 1 and the second magnetic layer 2, and between the second magnetic layer 2 and the third magnetic layer 3, an anti-parallel magnetization state is established and a high resistance state is established.

【００３５】また、図７は、図６に示すものと同じ原理
であるが、第２磁性層２の磁化の方向が一定であって、
第１磁性層１及び第３磁性層３の磁化が反転する場合を
示している。FIG. 7 shows the same principle as that shown in FIG. 6, except that the direction of magnetization of the second magnetic layer 2 is constant.
The case where the magnetizations of the first magnetic layer 1 and the third magnetic layer 3 are reversed is shown.

【００３６】この実施の形態においては、第１磁性層
１、第２磁性層２及び第３磁性層３は、全て、希土類元
素と鉄族元素との合金からなるフェリ磁性膜とするとこ
とが好ましい。In this embodiment, the first magnetic layer 1, the second magnetic layer 2, and the third magnetic layer 3 are preferably all ferrimagnetic films made of an alloy of a rare earth element and an iron group element. .

【００３７】（第１２の実施形態）磁気抵抗効果、特に
スピントンネル効果を高めて磁気抵抗変化率を高めるた
めには、非磁性層の両側に、スピン分極率の高い材料の
磁性層を設けることが望ましい。第１磁性層、第２磁性
層、第３磁性層は、膜面垂直方向に磁化した磁性膜であ
る。これらの磁性膜が十分高い抵抗変化率を生じせしめ
ない場合には、非磁性層の両側に抵抗変化率が高くなる
ような磁性膜を設けて、これらの磁性膜が垂直磁化膜と
磁気的に結合するようにすればよい。抵抗変化率が高く
なる磁性膜とは、特にスピントンネル効果の場合、スピ
ン分極率が高いことに相当する。したがって、第１磁性
層と第１非磁性層の間、第２磁性層と第１非磁性層の
間、第２磁性層と第２非磁性層の間、第２非磁性層と第
３磁性層の間の少なくとも１箇所に、スピン分極率の高
い磁性層が設けると良い。(Twelfth Embodiment) In order to increase the magnetoresistance effect, particularly the spin tunnel effect, and to increase the magnetoresistance ratio, a magnetic layer made of a material having a high spin polarizability is provided on both sides of the nonmagnetic layer. Is desirable. The first magnetic layer, the second magnetic layer, and the third magnetic layer are magnetic films magnetized in a direction perpendicular to the film surface. If these magnetic films do not produce a sufficiently high resistance change rate, provide a magnetic film on both sides of the nonmagnetic layer so that the resistance change rate is high, and these magnetic films are magnetically connected to the perpendicular magnetization film. What is necessary is just to combine. A magnetic film having a high resistance change rate corresponds to a high spin polarizability, especially in the case of a spin tunnel effect. Therefore, between the first magnetic layer and the first nonmagnetic layer, between the second magnetic layer and the first nonmagnetic layer, between the second magnetic layer and the second nonmagnetic layer, and between the second nonmagnetic layer and the third magnetic layer. At least one magnetic layer having a high spin polarizability is preferably provided between the layers.

【００３８】また、磁気的な結合としては，交換結合と
静磁結合が挙げられる。このうち、交換結合は、膜面に
均一に作用し、磁性層間に非磁性層を設ける必要がない
ので、磁気的な結合としては、交換結合がより望まし
い。The magnetic coupling includes exchange coupling and magnetostatic coupling. Of these, exchange coupling acts uniformly on the film surface and does not require the provision of a non-magnetic layer between magnetic layers. Therefore, exchange coupling is more desirable as magnetic coupling.

【００３９】スピン分極率が高い磁性層の膜厚として
は、原子オーダーから、１０ｎｍの範囲がよい。好まし
くは、１ｎｍから５ｎｍの範囲がよい。スピン分極率が
高い材料は、フェロ磁性材料などがあげられ、例えばＦ
ｅ，Ｃｏ，ＦｅＣｏなどであり、磁化が大きいために反
磁界により膜面内方向に磁化しやすい性質がある。第１
磁性層、第２磁性層、第３３磁性層と交換結合させて垂
直方向に磁化させるためには薄いほうが、垂直に磁化さ
せやすいからである。The thickness of the magnetic layer having a high spin polarizability is preferably in the range from the atomic order to 10 nm. Preferably, the range is 1 nm to 5 nm. Examples of the material having a high spin polarizability include a ferromagnetic material.
e, Co, FeCo, etc., which have a property of being easily magnetized in the in-plane direction of the film due to the demagnetizing field due to the large magnetization. First
This is because, in order to exchange-couple with the magnetic layer, the second magnetic layer, and the 33rd magnetic layer and to vertically magnetize, the thinner the magnetic layer, the easier the perpendicular magnetization.

【００４０】図８は、このようなスピン分極率の高い磁
性層を有する磁気抵抗素子を示している。この磁気抵抗
素子は、第１の実施形態の磁気抵抗素子において、第１
磁性層１と第１非磁性層Ｎ１の間に高スピン分極率材料
層Ｍ１、第１非磁性層Ｎ１と第２磁性層２の間に高スピ
ン分極率材料層Ｍ２、第２磁性層２と第２非磁性層Ｎ２
の間に高スピン分極率材料層Ｍ３、第２非磁性層Ｎ２と
第３磁性層３の間に高スピン分極率材料層Ｍ４をそれぞ
れ設けた構成のものである。FIG. 8 shows a magnetoresistive element having a magnetic layer having such a high spin polarizability. This magnetoresistive element is different from the magnetoresistive element of the first embodiment in that the first
A high spin polarizability material layer M1 between the magnetic layer 1 and the first nonmagnetic layer N1, a high spin polarizability material layer M2 between the first nonmagnetic layer N1 and the second magnetic layer 2, and a second magnetic layer 2 Second non-magnetic layer N2
And a high spin polarizability material layer M4 between the second nonmagnetic layer N2 and the third magnetic layer 3, respectively.

【００４１】高スピン分極率材料層Ｍ１〜Ｍ４として
は、Ｃｏ，Ｆｅ，ＣｏＦｅなどの層を用いることができ
るが、中でも、ＣｏＦｅが、高いＭＲ比を達成されるた
めに、好ましい。またこれらの材料は、単独で膜形成し
た場合には面内磁化膜となるため、薄膜として形成して
第１磁性層１、第２磁性層２、第３磁性層３などと交換
結合させることにより垂直磁化膜とすることが好まし
い。As the high spin polarizability material layers M1 to M4, layers of Co, Fe, CoFe and the like can be used. Among them, CoFe is preferable because a high MR ratio is achieved. In addition, since these materials become in-plane magnetized films when formed alone, they should be formed as thin films and exchange-coupled with the first magnetic layer 1, the second magnetic layer 2, the third magnetic layer 3, and the like. It is preferable to use a perpendicular magnetization film.

【００４２】（第１３の実施形態）本発明に基づく前述
した各実施形態の磁気抵抗素子に、垂直方向の磁界を発
生させる磁場発生手段を設けることで、この磁場発生手
段を用いて磁気抵抗素子に情報の記録を行い、メモリ素
子とすることができる。例えば図９に示すように、図示
しない絶縁膜を介して書き込み線９００を磁気抵抗素子
の近傍に配置する。ここで絶縁膜を設けるのは、磁気抵
抗素子と書き込み線９００との電気的な接触を防ぐため
である。(Thirteenth Embodiment) A magnetic field generating means for generating a magnetic field in the vertical direction is provided in the magnetoresistive element according to each of the above-described embodiments based on the present invention. The information can be recorded in the memory device to form a memory element. For example, as shown in FIG. 9, a write line 900 is arranged near a magnetoresistive element via an insulating film (not shown). The reason why the insulating film is provided here is to prevent electrical contact between the magnetoresistive element and the write line 900.

【００４３】書き込み線９００は、紙面の垂直方向に延
びており、（ａ）では、紙面奥側に向かって電流を流す
ことにより、第２磁性層２の磁化を上向きとする。また
（ｂ）では、紙面から手前に向かって電流を流すことに
より、第２磁性層１の磁化を下向きにすることができ
る。The write line 900 extends in the direction perpendicular to the plane of the drawing. In FIG. 7A, the current is caused to flow toward the back of the drawing to make the magnetization of the second magnetic layer 2 upward. In (b), the magnetization of the second magnetic layer 1 can be directed downward by flowing a current from the paper surface toward this side.

【００４４】（第１４の実施形態）メモリ装置（ＭＲＡ
Ｍ）を構成する場合には、それぞれ上述したようなメモ
リ素子からなるメモリセルをマトリックス状に配置す
る。この際に生じるメモリセル間のクロストークを解消
するためには、スイッチング素子を設けるとよい。Fourteenth Embodiment Memory Device (MRA)
In the case of configuring M), memory cells each including the above-described memory element are arranged in a matrix. In order to eliminate crosstalk between memory cells generated at this time, a switching element may be provided.

【００４５】図１０は、スイッチング素子を有するメモ
リセルアレイを示したものであり、ここでは、メモリセ
ルアレイ中の多数あるメモリセルのうちの１つのみを取
り出して示したものである。実際には、図示横方向と奥
手方向に同様のメモリセルが並んでおり、上面から見て
マトリックス状に配置されている。FIG. 10 shows a memory cell array having a switching element. Here, only one of many memory cells in the memory cell array is taken out and shown. Actually, similar memory cells are arranged in the horizontal direction and the depth direction in the drawing, and are arranged in a matrix when viewed from above.

【００４６】図１０において、シリコン半導体のｐ型基
板３３上に作成したｎ+領域であるソース領域３２及び
ドレイン領域３１と、ゲート電極８０とからなるＭＯＳ
ＦＥＴ（金属酸化物半導体電界効果トランジスタ）のう
ち、ドレイン領域３１に上述の磁気抵抗素子の一端が接
続されている。磁気抵抗素子の他端はセンス線４０に接
続される。In FIG. 10, a MOS comprising an n + -type source region 32 and a drain region 31 formed on a silicon semiconductor p-type substrate 33 and a gate electrode 80.
In the FET (metal oxide semiconductor field effect transistor), one end of the above-described magnetoresistive element is connected to the drain region 31. The other end of the magnetoresistive element is connected to a sense line 40.

【００４７】記録情報の書き込み・消去は、紙面垂直方
向に延びた書き込み線９００と紙面横方向に延びたセン
ス線４０とに電流を流すことで、それらの交点に位置し
た磁気抵抗素子（メモリセル）に記録を行うことができ
る。ソース領域３２に接続された電極７０は接地されて
おり、センス線４０の左端に電流源、右端にセンス回路
を設けることで、磁気抵抗素子の抵抗値に応じた電位を
センス回路に与えることができ、情報の検出が可能とな
る。Writing and erasing of recorded information is performed by applying a current to a write line 900 extending in a direction perpendicular to the plane of the drawing and a sense line 40 extending in a direction perpendicular to the plane of the drawing, so that a magnetoresistive element (memory cell ) Can be recorded. The electrode 70 connected to the source region 32 is grounded. By providing a current source at the left end of the sense line 40 and a sense circuit at the right end, a potential corresponding to the resistance value of the magnetoresistive element can be applied to the sense circuit. And information can be detected.

【００４８】[0048]

【発明の効果】以上説明したように本発明は、磁気抵抗
素子として垂直磁化膜を用いるとともに２つの非磁性層
を設けることにより、素子を微細化しても安定に磁化情
報を保存することができるとともに、ＭＲ比のバイアス
依存性を改善することができるという効果がある。As described above, according to the present invention, by using a perpendicular magnetization film as a magnetoresistive element and providing two nonmagnetic layers, magnetization information can be stably stored even when the element is miniaturized. In addition, there is an effect that the bias dependency of the MR ratio can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施形態の磁気抵抗素子を示す
断面図である。FIG. 1 is a sectional view showing a magnetoresistive element according to a first embodiment of the present invention.

【図２】第３の実施形態における磁気抵抗素子の磁化状
態を示す図である。FIG. 2 is a diagram illustrating a magnetization state of a magnetoresistive element according to a third embodiment.

【図３】第５の実施形態におけるメモリ素子からの情報
の読出しを説明する図である。FIG. 3 is a diagram illustrating reading of information from a memory element according to a fifth embodiment.

【図４】第７の実施形態におけるメモリ素子からの情報
の読出しを説明する図である。FIG. 4 is a diagram illustrating reading of information from a memory element according to a seventh embodiment.

【図５】第８の実施形態における磁気抵抗素子の磁化状
態を説明する図である。FIG. 5 is a diagram illustrating a magnetization state of a magnetoresistive element according to an eighth embodiment.

【図６】第１１の実施形態における磁気抵抗素子の磁化
状態の例を示す図である。FIG. 6 is a diagram illustrating an example of a magnetization state of a magnetoresistive element according to an eleventh embodiment.

【図７】第１１の実施形態における磁気抵抗素子の磁化
状態の別の例を示す図である。FIG. 7 is a diagram illustrating another example of the magnetization state of the magnetoresistive element according to the eleventh embodiment.

【図８】第１２の実施形態の磁気抵抗素子の断面図であ
る。FIG. 8 is a sectional view of a magnetoresistive element according to a twelfth embodiment.

【図９】メモリ素子の基本構成を示す図である。FIG. 9 is a diagram showing a basic configuration of a memory element.

【図１０】メモリセルの構成の一例を示す断面図であ
る。FIG. 10 is a cross-sectional view illustrating an example of a configuration of a memory cell.

【図１１】従来の磁気抵抗素子の構成の一例を示す断面
図である。FIG. 11 is a sectional view showing an example of a configuration of a conventional magnetoresistive element.

【符号の説明】[Explanation of symbols]

１，１１ 第１磁性層 ２，１２ 第２磁性層 ３，１３ 第３磁性層 ３１ ドレイン領域 ３２ ソース領域 ３３ Ｓｉ基板 ４０ センス線 ７０ ソース電極 ８０ ゲート電極 ９００ 書き込み線 Ｎ１，Ｎ１１ 第１非磁性層 Ｎ２，Ｎ１２ 第２非磁性層 Ｍ１〜Ｍ４ 高スピン分極率材料層 Reference Signs List 1,11 First magnetic layer 2,12 Second magnetic layer 3,13 Third magnetic layer 31 Drain region 32 Source region 33 Si substrate 40 Sense line 70 Source electrode 80 Gate electrode 900 Write line N1, N11 First nonmagnetic layer N2, N12 Second nonmagnetic layer M1 to M4 High spin polarizability material layer

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｆ 10/16 Ｈ０１Ｆ 10/32 10/32 Ｇ０１Ｒ 33/06 Ｒ Ｈ０１Ｌ 27/105 Ｈ０１Ｌ 27/10 ４４７ ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01F 10/16 H01F 10/32 10/32 G01R 33/06 R H01L 27/105 H01L 27/10 447

Claims (22)

【特許請求の範囲】[Claims] 【請求項１】 膜面垂直方向に磁化した第１磁性層と、
第１非磁性層と、膜面垂直方向に磁化した第２磁性層
と、第２非磁性層と、膜面垂直方向に磁化した第３磁性
層とが順に積層されたことを特徴とする磁気抵抗素子。A first magnetic layer magnetized in a direction perpendicular to a film surface;
A first nonmagnetic layer, a second magnetic layer magnetized in a direction perpendicular to the film surface, a second nonmagnetic layer, and a third magnetic layer magnetized in a direction perpendicular to the film surface are sequentially stacked. Resistance element. 【請求項２】 前記第１磁性層及び前記第３磁性層の保
磁力がいずれも前記第２磁性層の保磁力よりも大きい、
請求項１に記載の磁気抵抗素子。2. The coercive force of each of the first magnetic layer and the third magnetic layer is larger than the coercive force of the second magnetic layer.
The magnetoresistive element according to claim 1. 【請求項３】 前記第１磁性層及び前記第３磁性層の保
磁力がいずれも前記第２磁性層の保磁力よりも小さい、
請求項１に記載の磁気抵抗素子。3. The coercive force of each of the first magnetic layer and the third magnetic layer is smaller than the coercive force of the second magnetic layer.
The magnetoresistive element according to claim 1. 【請求項４】 前記第１磁性層の磁化の向きと前記第３
磁性層の磁化の向きが反平行である請求項３に記載の磁
気抵抗素子。4. The method according to claim 1, wherein the direction of magnetization of the first magnetic layer and the third
4. The magnetoresistive element according to claim 3, wherein the magnetization direction of the magnetic layer is antiparallel. 【請求項５】 前記第１磁性層、前記第２磁性層及び前
記第３磁性層の少なくとも１つの磁性層が希土類−鉄族
元素合金からなる、請求項１乃至４いずれか１項に記載
の磁気抵抗素子。5. The magnetic recording medium according to claim 1, wherein at least one of the first magnetic layer, the second magnetic layer, and the third magnetic layer is made of a rare earth-iron group element alloy. Magnetic resistance element. 【請求項６】 前記第１磁性層及び前記第３磁性層の一
方が鉄族元素副格子磁化優勢な希土類鉄族合金膜であ
り、前記第１磁性層及び前記第３磁性層の他方が希土類
元素副格子磁化優勢な希土類鉄族合金膜である、請求項
５に記載の磁気抵抗素子。6. One of the first magnetic layer and the third magnetic layer is a rare earth iron group alloy film in which the iron group element sublattice magnetization is dominant, and the other of the first magnetic layer and the third magnetic layer is a rare earth element. 6. The magnetoresistive element according to claim 5, wherein the element is a rare earth iron group alloy film in which elemental sublattice magnetization is dominant. 【請求項７】 前記第１磁性層、前記第２磁性層及び前
記第３磁性層の少なくとも１つがフェリ磁性層からなる
請求項１乃至４のいずれか１項に記載の磁気抵抗素子。7. The magnetoresistive element according to claim 1, wherein at least one of said first magnetic layer, said second magnetic layer and said third magnetic layer comprises a ferrimagnetic layer. 【請求項８】 前記フェリ磁性層がＧｂ，Ｔｂ、Ｄｙの
少なくとも１種を含む希土類元素とＦｅ，Ｃｏのうち少
なくとも１種を含む鉄族元素とからなる請求項７に記載
の磁気抵抗素子。8. The magnetoresistive element according to claim 7, wherein said ferrimagnetic layer comprises a rare earth element containing at least one of Gb, Tb, and Dy and an iron group element containing at least one of Fe and Co. 【請求項９】 前記第１非磁性層及び前記第２非磁性層
が絶縁層からなる請求項１乃至８いずれか１項に記載の
磁気抵抗素子。9. The magnetoresistive element according to claim 1, wherein the first nonmagnetic layer and the second nonmagnetic layer are formed of an insulating layer. 【請求項１０】 前記第１磁性層と前記第１非磁性層の
間、前記第２磁性層と前記第１非磁性層の間、前記第２
磁性層と前記第２非磁性層の間、前記第２非磁性層と前
記第３磁性層の間の少なくとも一つに、前記第１磁性層
もしくは前記第２磁性層もしくは前記第３磁性層よりも
スピン分極率の高い磁性層が設けられている、請求項１
乃至９のいずれか１項に記載の磁気抵抗素子。10. The semiconductor device according to claim 1, wherein the first magnetic layer and the first non-magnetic layer, the second magnetic layer and the first non-magnetic layer,
At least one between the magnetic layer and the second non-magnetic layer, and at least one between the second non-magnetic layer and the third magnetic layer, the first magnetic layer, the second magnetic layer, or the third magnetic layer; 2. A magnetic layer having a high spin polarizability.
10. The magnetoresistive element according to any one of claims 9 to 9. 【請求項１１】 前記スピン分極率の高い磁性層が、Ｆ
ｅ，Ｃｏのうち少なくとも１種を含む請求項１０に記載
の磁気抵抗素子。11. The magnetic layer having a high spin polarizability,
11. The magnetoresistive element according to claim 10, comprising at least one of e and Co. 【請求項１２】 前記スピン分極率の高い磁性層が、Ｃ
ｏＦｅからなる請求項１１に記載の磁気抵抗素子。12. The magnetic layer having a high spin polarizability,
The magnetoresistive element according to claim 11, comprising oFe. 【請求項１３】 請求項２に記載の磁気抵抗素子を用
い、前記第１磁性層と前記第３磁性層の磁化方向を一定
にし、前記第２磁性層の磁化方向を記録情報に応じて変
化させるようにしたことを特徴とするメモリ素子。13. The magnetic resistance element according to claim 2, wherein the magnetization directions of the first magnetic layer and the third magnetic layer are fixed, and the magnetization direction of the second magnetic layer is changed according to recording information. A memory element characterized in that it is made to cause. 【請求項１４】 請求項２に記載の磁気抵抗素子を用
い、前記第１磁性層と前記第３磁性層の磁化方向を記録
情報に応じて変化させ、前記第２磁性層の磁化方向を読
出し時に反転させるようにしたことを特徴とするメモリ
素子。14. Using the magnetoresistive element according to claim 2, changing the magnetization directions of the first magnetic layer and the third magnetic layer according to recorded information, and reading the magnetization direction of the second magnetic layer. A memory element characterized in that it is occasionally inverted. 【請求項１５】 請求項３に記載の磁気抵抗素子を用
い、前記第２磁性層の磁化方向を一定にし、前記第１磁
性層及び前記第３磁性層の磁化方向を記録情報に応じて
変化させるようにしたことを特徴とするメモリ素子。15. Using the magnetoresistive element according to claim 3, keeping the magnetization direction of the second magnetic layer constant, and changing the magnetization directions of the first magnetic layer and the third magnetic layer according to recorded information. A memory element characterized in that it is made to cause. 【請求項１６】 請求項３に記載の磁気抵抗素子を用
い、前記第２磁性層の磁化方向を記録情報に応じて変化
させ、前記第１磁性層及び前記第３磁性層の磁化方向を
読出し時に反転させるようにしたことを特徴とするメモ
リ素子。16. Using the magnetoresistive element according to claim 3, changing the magnetization direction of the second magnetic layer according to recording information, and reading the magnetization directions of the first magnetic layer and the third magnetic layer. A memory element characterized in that it is occasionally inverted. 【請求項１７】 前記請求項１乃至１２のいずれか１項
に記載の磁気抵抗素子と、 前記磁気抵抗素子の膜面に垂直方向の磁界を発生する磁
場発生手段とを有し、 前記磁場発生手段を用いて前記磁気抵抗素子に情報の記
録を行うことを特徴とするメモリ素子。17. The magnetic field generation device according to claim 1, further comprising: a magnetic field generation unit configured to generate a magnetic field in a direction perpendicular to a film surface of the magnetoresistance element. A memory element for recording information in said magnetoresistive element using a means. 【請求項１８】 請求項１７に記載のメモリ素子の磁気
抵抗素子の一端を電界効果トランジスタのドレイン領域
に接続し、他端をビット線に接続したことを特徴とする
メモリセル。18. A memory cell according to claim 17, wherein one end of the magnetoresistive element of the memory element is connected to a drain region of the field effect transistor, and the other end is connected to a bit line. 【請求項１９】 請求項１３に記載のメモリ素子の記録
再生方法において、前記第２磁性層の磁化の向きにより
情報を記録し、前記メモリ素子の抵抗値により、記録さ
れた情報の読出しを行うことを特徴とするメモリ素子の
記録再生方法。19. The recording / reproducing method of a memory element according to claim 13, wherein information is recorded according to a direction of magnetization of the second magnetic layer, and the recorded information is read according to a resistance value of the memory element. A recording / reproducing method for a memory element, comprising: 【請求項２０】 請求項１４に記載のメモリ素子の記録
再生方法において、前記第２磁性層の磁化の向きにより
情報を記録し、読出し時に、前記第１磁性層及び前記第
３磁性層の磁化の向きを反転させた際の抵抗値の変化に
基づいて、記録された情報を読み出すことを特徴とする
メモリ素子の記録再生方法。20. The recording / reproducing method for a memory element according to claim 14, wherein information is recorded according to the direction of magnetization of said second magnetic layer, and said first and third magnetic layers are magnetized during reading. A recorded information is read out based on a change in a resistance value when the direction is reversed. 【請求項２１】 請求項１５に記載のメモリ素子の記録
再生方法において、前記第１磁性層及び前記第３磁性層
の磁化の向きにより情報を記録し、前記メモリ素子の抵
抗値により、記録された情報の読出しを行うことを特徴
とするメモリ素子の記録再生方法。21. The recording / reproducing method of a memory element according to claim 15, wherein information is recorded by a magnetization direction of the first magnetic layer and the third magnetic layer, and the information is recorded by a resistance value of the memory element. And reading information from the memory element. 【請求項２２】 請求項１６に記載のメモリ素子の記録
再生方法において、前記第１磁性層及び前記第３磁性層
の磁化の向きにより情報を記録し、読出し時に、前記第
２磁性層の磁化の向きを反転させた際の抵抗値の変化に
基づいて、記録された情報を読み出すことを特徴とする
メモリ素子の記録再生方法。22. The recording / reproducing method for a memory element according to claim 16, wherein information is recorded according to the magnetization directions of the first magnetic layer and the third magnetic layer, and the magnetization of the second magnetic layer is read at the time of reading. A recorded information is read out based on a change in a resistance value when the direction is reversed.
JP2001078470A 2001-03-19 2001-03-19 Recording / reproducing method of memory element, magnetoresistive element, and magnetic random access memory Expired - Lifetime JP3658331B2 (en)

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US10/098,116 US6713830B2 (en) 2001-03-19 2002-03-15 Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element
DE60216838T DE60216838T2 (en) 2001-03-19 2002-03-18 Magnetoresistive element, memory element with this magnetoresistive element, and recording / reproducing method for the memory element
EP02006094A EP1244117B1 (en) 2001-03-19 2002-03-18 Magnetoresistive element, memory element using the magnetorestistive element, and recording/reproduction method for the memory element
TW091105059A TWI272610B (en) 2001-03-19 2002-03-18 Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element
CNB021206007A CN100490003C (en) 2001-03-19 2002-03-19 Magnetic resistance element, storage element using same and relative recording/reproducing method
KR10-2002-0014631A KR100502113B1 (en) 2001-03-19 2002-03-19 Magnetoresistive element, memory element using the magnetoresistive element, and recording/reproduction method for the memory element

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JP2010021580A (en) * 2005-10-19 2010-01-28 Toshiba Corp Magneto-resistance effect device, magnetic random access memory, electronic card, electronic apparatus, production process of magneto-resistance effect device, and production process of magnetic random access memory
US7663197B2 (en) 2005-10-19 2010-02-16 Kabushiki Kaisha Toshiba Magnetoresistive element
JP2010080476A (en) * 2008-09-24 2010-04-08 Toshiba Corp Magnetic memory, reproducing method and writing method of the same,
JP2012519957A (en) * 2009-03-03 2012-08-30 アバランチ テクノロジー， インコーポレイテッド Multi-state spin injection magnetic random access memory

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Publication number Priority date Publication date Assignee Title
JP2010021580A (en) * 2005-10-19 2010-01-28 Toshiba Corp Magneto-resistance effect device, magnetic random access memory, electronic card, electronic apparatus, production process of magneto-resistance effect device, and production process of magnetic random access memory
US7663197B2 (en) 2005-10-19 2010-02-16 Kabushiki Kaisha Toshiba Magnetoresistive element
US8036025B2 (en) 2005-10-19 2011-10-11 Kabushiki Kaisha Toshiba Magnetoresistive element
US8363462B2 (en) 2005-10-19 2013-01-29 Kabushiki Kaisha Toshiba Magnetoresistive element
JP2010080476A (en) * 2008-09-24 2010-04-08 Toshiba Corp Magnetic memory, reproducing method and writing method of the same,
JP2012519957A (en) * 2009-03-03 2012-08-30 アバランチ テクノロジー， インコーポレイテッド Multi-state spin injection magnetic random access memory

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