JP2002280510A - Method for manufacturing semiconductor device and method for manufacturing hybrid integrated circuit device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of forming a large number of semiconductor devices at one time and remarkably improving a manufacturing process and a manufacturing cost, and to provide a method for manufacturing a hybrid integrated circuit device for realizing simple assembling steps by omitting a wire bonding step of a fine wire or a die bonding step of a semiconductor element or the like. SOLUTION: The method for manufacturing the semiconductor used for the hybrid integrated circuit device or particularly the semiconductor containing a power transistor 13 comprises steps of fixing the power transistor on a heat sink 11, connecting an extracting electrode 12 provided adjacent to the transistor 13 by a fine metal wire 16, and molding them with an insulating resin 17. Thereafter, the semiconductor device is fixed to a mounting substrate 21 having a conductive pattern 22 formed thereon, and hence assembling steps of the hybrid integrated circuit device can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit device and a method of manufacturing the same, in which a semiconductor device is preliminarily manufactured in a preparatory process, a thin metal wire bonding process and a chip The present invention relates to a method of manufacturing a semiconductor device which can omit a die bonding step and greatly reduce the number of assembling steps, and a method of manufacturing a hybrid integrated circuit device using the same.

[0002]

2. Description of the Related Art Conventionally, in a hybrid integrated circuit device set in an electronic device, a conductive pattern is formed on, for example, a printed circuit board, a ceramic substrate, or a metal substrate, and an active element such as an LSI or a discrete TR is formed thereon. , A passive element such as a chip capacitor, a chip resistor or a coil is mounted. Then, the conductive pattern and the element are electrically connected to realize a circuit having a predetermined function.

[0003] An example of a circuit is an audio circuit, and the elements shown therein are mounted as shown in FIG.

In FIG. 11, the outermost rectangular line is a mounting substrate 1 having at least a surface insulated. On top of this, a conductive pattern 2 made of Cu is adhered. The conductive pattern 2 includes an external extraction electrode 2A, a wiring 2B, a die pad 2C, a bonding pad 2D, an electrode 4 for fixing the passive element 3, and the like.

The die pad 2C has a TR, a diode,
It is in the form of a bare chip such as a composite element or LSI, and is fixed via solder. The electrode on the fixed chip and the bonding pad 2D are electrically connected to each other via thin metal wires 5A, 5B, and 5C for bonding wires. The thin metal wires are generally classified into small signals and large signals, and the small signal portion is a thin metal wire having a diameter of 20 to 80 μmφ. And here, A of about 40 μmφ
An l line 5A or an Au line is employed. The large signal portion employs an Al wire of about 100 to 500 μmφ. In particular, since a large signal has a large wire diameter, an Al wire 5B of 150 μmφ and an Al wire 5C of 300 μmφ are selected.
The diameter of the large-signal thin metal wire is appropriately adopted in consideration of the flowing current capacity, the bonding pad size, and the like.

A power TR 6 for flowing a large current is fixed to a heat sink 7 on the die pad 2C in order to prevent a temperature rise of the chip.

The wiring 2B extends to various places in order to make the external extraction electrode 2A, die pad 2C, bonding pad 2D and electrode 4 into circuits. When the wirings cross each other due to the position of the chip and the way the wirings extend, the jumping lines 8A and 8B are adopted.

[0008]

As is apparent from FIG. 11, a chip capacitor, a chip resistor, and a TR for small signals are used.
Chip, TR chip for large signal, diode and LSI
And so on, each of which is fixed with a brazing material or the like. Semiconductor elements such as TR chips are electrically connected using thin metal wires. The thin metal wires are classified into a plurality of types according to the current capacity, and the number of the thin metal wires is very large. In addition, since the technology for bonding thin metal wires is technically advanced, maintenance of bonding equipment and the like is required. As is evident from this, the attachment of the chip and the connection of the thin metal wire greatly increase the assembly process and increase the cost.

In the same manner as described above, when the power transistor is fixed to the substrate on which the conductive path is incorporated, first, a heat sink is fixed, the power transistor is fixed on the heat sink, and then the bonding pad portion of the power transistor is formed. And the conductive path are electrically connected by using a thick thin metal wire for a power transistor. For this reason, the cost is increased and the working time is prolonged due to the extremely long assembly process. Further, when the bonding pad portion of the power transistor and the conductive path are connected by a thin metal wire, there is a problem that the thin metal wire is cut or short-circuited due to contact with the heat sink.

In the case where a thin metal wire electrically connecting a semiconductor element such as a transistor has a structure in which the thin metal wire is exposed, work such as epoxy coating and a case is required to protect the exposed thin metal wire. There was a necessary problem.

When a package in which a semiconductor element is fixed to a lead frame currently on the market is mounted on a hybrid integrated circuit board, the package size is extremely large.
There is also a problem that the size of the hybrid integrated circuit board becomes large.

As described above, even if an attempt is made to reduce the cost by adopting a hybrid integrated circuit board, the cost is increased due to the fact that the assembly process is lengthened, and that the equipment requires maintenance because of the advanced bonding technology. There was a problem of inviting.

[0013]

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-mentioned conventional problems, and has been made in consideration of the above-mentioned problems. A step of providing a large number of units and the step of fixing a bare chip of a semiconductor element to the heat sink of each unit of the metal plate,
A step of connecting the electrode of the semiconductor element of each unit of the metal plate and the extraction electrode; a step of integrally molding each unit of the metal plate with an insulating resin; and A step of removing a concave portion between the heat sink and the extraction electrode of each unit; and a step of cutting the insulating resin to separate the unit into individual units.

In the method for manufacturing a semiconductor integrated circuit device according to the present invention, preferably, in the step of half-pressing the metal plate, the metal plate is formed to be ２〜 to ／ of the thickness of the metal plate.
A plurality of the units can be integrally formed on the metal plate by extracting the unit to a certain extent.

In the method of manufacturing a semiconductor integrated circuit device according to the present invention, preferably, in the step of integrally molding the insulating resin on the metal plate, a metal between the heat sink and the extraction electrode of each unit is provided. A plurality of through holes are simultaneously formed on the plate. Thereby, in the step of removing the concave portion between the heat sink and the extraction electrode of each unit, the metal plate extracted by the half press is pressed through the through hole and the metal plate is pressed between the heat sink and the extraction electrode. The metal plate can be removed to form a large number of units at one time.

Further, in the method of manufacturing a semiconductor integrated circuit device according to the present invention, a step of half-pressing a metal plate to provide a large number of units having a heat sink and an extraction electrode arranged in a position close to the heat sink is formed as a convex portion. Fixing a bare chip of a semiconductor element to the heat sink of each unit of the metal plate; connecting an electrode of the semiconductor element of each unit of the metal plate to the extraction electrode; A step of integrally molding each unit with an insulating resin, a step of removing a concave portion between the heat sink and the extraction electrode of each unit from a surface of the insulating resin, and cutting the insulating resin. A step of separating the unit into individual units, and a step of incorporating the unit into a mounting board on which a plurality of conductive patterns are formed. And wherein the door.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a hybrid integrated circuit device capable of simplifying an assembling process. In particular, the present invention performs a bonding process of a thin metal wire and a die bonding process of a semiconductor element in a preparatory process. The present invention relates to a hybrid integrated circuit device that simplifies an assembly process. The preparation step referred to here is a step of preparing a large number of semiconductor devices including semiconductor elements such as small signal elements and power transistors at once.

In general, in a hybrid integrated circuit device, an electronic circuit is composed of various circuit elements, and an active element such as a TR chip, an IC chip or an LSI chip, and a passive element such as a chip capacitor or a chip resistor are mounted as necessary. ing. These circuit elements are electrically connected to a conductive pattern formed on the mounting board. In order to realize a circuit, a wiring is provided in the conductive pattern, and the circuit elements are electrically connected through a brazing material, conductive balls, solder balls, conductive paste, or fine metal wires.

In particular, the hybrid integrated circuit device according to the present invention relates to a hybrid integrated circuit device using a large-current semiconductor element requiring heat radiation, for example, a power transistor, a power MOSFET or the like. Specifically, a power transistor formed on a metal plate used as a heat sink, a lead electrode, and a thick thin metal wire for a power transistor that electrically connects the power transistor and the lead electrode are transfer-molded with an insulating resin. The present invention relates to a hybrid integrated circuit device in which a semiconductor device formed by bonding is mounted on a mounting substrate on which a plurality of conductive patterns are formed.

Embodiments of a hybrid integrated circuit device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

FIG. 1 shows a semiconductor device used for the hybrid integrated circuit device of the present embodiment. A power transistor 13, an extraction electrode 12, and a thin metal wire 16 for electrically connecting them are formed on an insulating resin 17 on a metal plate. 3A is a cross-sectional view of the semiconductor device transfer-molded in FIG. The semiconductor device used in this embodiment is:
A power transistor 13 is fixed on a heat sink 11 made of a copper metal plate via an adhesive 14 obtained by melting a solder ribbon or a solder wire by heat. Then, a thin metal wire 16 for electrically connecting the bonding pad portion 15 of the power transistor 13 and the extraction electrode 12 formed of a copper metal plate formed adjacent to the heat sink 11 is transfer-molded with an insulating resin 17. It is formed by doing. The metal plate may be made of a metal such as silver other than copper. Although not shown, the heat sink 11 may be silver-plated or gold-plated in consideration of the adhesiveness to the adhesive 14 obtained by melting the solder ribbon or the solder wire by heat. Further, a thin metal wire 16 is formed on the extraction electrode 12.
Silver plating or nickel plating is applied in consideration of the adhesiveness of the metal.

Here, the side surfaces of the heat sink 11 and the extraction electrode 12 made of a copper metal plate have a shear surface 18 and a fracture surface 23. The thickness of the shear surface 18 is formed to be about 1/2 to 1/3 of the thickness of the metal plate.
In the present embodiment, as shown in FIG.
Has a structure in which the insulating resin 17 is not coated on the fracture surface 23 and the back surface of the metal plate of the heat sink 11 and the extraction electrode 12. As a result, for example, in consideration of the oxidation of the surface of the metal plate made of Cu and the melting property of the solder which is the material for forming the electrode 20 on the bottom surface of the metal plate, the metal plate of the heat sink 11 and the extraction electrode 12 are taken into account. Ag plating, Au plating, nickel plating or the like is applied to the fractured surface 18 and the rear surface of the substrate.

On the back surface of the semiconductor device shown in FIG. 1, the lower surface of the metal plate of the heat sink 11 and the extraction electrode 12 has an electrode portion 20 formed by soldering. In addition, the semiconductor device has a structure having a plurality of through holes 24, and the through holes 24 will be described in detail in a method of manufacturing a semiconductor device described below.

The above-described semiconductor device having the power transistor 13 and the like built therein is used as shown in FIG. 2B with a conductive material 22 on a mounting substrate 21 shown in FIG. Thus, a hybrid integrated circuit device that can simplify the conventional manufacturing process can be realized.

Here, the mounting board 21 will be described.
As the mounting board 21 for mounting the above-described semiconductor device,
A printed circuit board, a ceramic substrate, a flexible sheet substrate or a metal substrate is conceivable. This mounting board 21
Since the conductive pattern is formed on the surface, at least the surface of the substrate is insulated in consideration of electrical insulation. Since the printed circuit board, ceramic substrate, and flexible sheet substrate are made of insulating material,
What is necessary is just to form a conductive pattern on the surface as it is. However, in the case of a metal substrate, an insulating material is applied at least on the surface, and a conductive pattern is applied thereon.

In the semiconductor device used in the hybrid integrated circuit device of this embodiment, the heat sink 1 made of a copper metal plate is used.
1 and the height of the extraction electrode 12 are formed at the same position. Therefore, the thin metal wire 16 electrically connecting the power transistor 13 and the extraction electrode 12 fixed on the heat sink 11 does not come into contact with the heat sink 11, so that the thin metal wire 16 is cut off or Since a short circuit does not occur, a semiconductor device with further improved product quality can be formed.

As described above, in the present embodiment, the case where the power transistor is used as the semiconductor element has been described, but it is not particularly limited to the power transistor. For example, in a power semiconductor device, a power MOSFET is used.
Even when T, IGBT, SIT, Tr for large current drive, IC for large current drive (MOS type BIP type Bi-CMOS type) memory element, etc., semi-power semiconductor elements and small signal semiconductor elements are used. The same effect can be obtained even if the user has a case. In addition, various changes can be made without departing from the spirit of the present invention.

Next, a method of manufacturing the hybrid integrated circuit device will be described. A first embodiment of a method of manufacturing a semiconductor device having a built-in power transistor and the like used in the method of manufacturing a hybrid integrated circuit device according to the present invention will be described with reference to FIGS.

As shown in FIG. 3, first, a large metal plate 3
Prepare 1 The metal plate 31 is made of a metal such as copper or silver,
It has a plate thickness of 0.5 to 3.0 mm.

Next, as shown in FIG. 4 (A), the metal plate 31 prepared in FIG. 3 is placed on a pedestal 32 of a press, and the metal plate 31 is formed with a heat sink 36, an emitter and a base extraction electrode 37. To the press machine,
The punch 33 is pressed into a half-punched state while leaving the portion where the heat sink 36, the emitter and the base extraction electrode 37 are formed. At this time, about 1/2 to 4/5 of the metal plate 31 is extracted, but the metal plate 31 is pressed so as to reduce the number of connection portions as much as possible according to the intended use.

As shown in FIG. 4B, the side surfaces of the concave portion formed on the surface of the pressed metal plate 31 and the convex portion formed on the back surface of the metal plate 31 have shear surfaces 34 and A fracture surface 35 is formed. The shear surface 34 is formed at the front and rear ends of the metal plate 31, and the fracture surface 35 is formed at the connection portion of the extracted metal plate 31 and its periphery. Note that the thickness of the shearing surface 34 is one of the thickness of the metal plate 31.
The thickness is about ２〜 to １ ／. Here, the fracture surface 35 is shown separately, but actually, the fracture surface 35 is joined.

Next, as shown in FIG.
The position of the plurality of heat sinks 36, emitters, and base extraction electrodes 37 formed on 1 is made to be recognized by the press machine. Then, a plurality of semiconductor device forming portions are formed on the metal plate 31 by repeating the above-described press working so as to leave the respective installation portions 36 and the electrodes 37 on the metal plate 31.

Next, as shown in FIG. 5, a power transistor 38 is fixed to the heat sink 36 at the convex portion of the metal plate 31 via a solder ribbon or an adhesive 39 obtained by melting a solder wire by heat. Then, the bonding pad portion of the fixed power transistor 38 and the emitter and base extraction electrodes 3
7 are electrically connected by a thin metal wire 40. At this time, since the power transistor 38, which flows a large current, has a large chip and a large current capacity, the size of the bonding pad is large, so that, for example, a large-diameter (300 μm) Al wire is used as the thin metal wire 40. . Then, it is connected to the bonding pad portion and the electrode 37 by ultrasonic die bonding with a thick wire bonder.

Although not shown, the heat sink 3
In some cases, silver plating or gold plating is applied on 6 in consideration of adhesiveness with the solder paste 39. Further, on the extraction electrode 37, silver plating or nickel plating is applied in consideration of the adhesiveness of the thin metal wire 40.

Next, as shown in FIG. 6, a power transistor 38 is fixed to a plurality of semiconductor device forming portions via a solder ribbon or an adhesive 39 obtained by melting a solder wire by heat. And a step of attaching the insulating resin 41 to the metal plate 31 connected to the base extraction electrode 37. This can be realized by transfer molding, injection molding, or potting or printing. In the present embodiment, for example, the insulating resin 41 is integrally molded by transfer molding. Here, as the insulating resin 41, a thermosetting resin such as an epoxy resin, or a thermoplastic resin such as a polyimide resin or polyphenylene sulfide can be used. As the insulating resin 41, any resin can be adopted as long as it is a resin that is hardened using a mold or a resin that can be applied and covered.

In the present embodiment, the through holes 42 used in the step of separating the heat sink 36 from the emitter and base extraction electrode 37 described in the next step are simultaneously formed in the step of integrally molding the insulating resin 41 on the metal plate 31. It is characterized by being formed.

More specifically, as shown in FIG.
The metal plate 31 shown in FIG. 5 prepared in the previous step is placed on the lower mold 47. Next, the upper mold 48 shown in FIG. 7B is installed in the lower mold 47 on which the metal plate 31 is installed, the insulating resin 41 is poured, and the inside of the mold is filled with the insulating resin 41. By curing, the insulating resin 41 is formed on the metal plate 31.
Adheres. At this time, as shown in FIG. 1 (B), the through-hole 42 is
A plurality of forming columns 49 are formed. As a result, the insulating resin 41 does not flow into the formation portion of the pillar 49 and the through hole 4
2 are formed. As a result, as shown in FIG. 6, a plurality of through holes 42 are formed in the insulating resin 41 on the metal plate 31.

In FIG. 7A, the column 49 of the upper mold and the thin metal wire 40 are shown as being in contact with each other, but actually, as shown in FIG. 1B, the two are in contact with each other. Absent.

Further, the thickness of the insulating resin 41 coated on the surface of the metal plate 31 is adjusted so as to cover about 100 μm from the top of the power transistor 38. This thickness can be increased or reduced in consideration of strength.

Conventionally, a transfer mold has been required for each component size. However, in the present invention, since the insulating resin 41 is integrally molded on the metal plate 31 to which the plurality of power transistors 38 are fixed by transfer molding, the mold for transfer molding has a size corresponding to the size of the frame. With a set, transfer molding can be performed using the same mold regardless of the size of the component.

Next, as shown in FIG. 8, the metal plate 31 is pressed through the through hole 42 from the surface of the metal plate 31 entirely covered with the insulating resin 41, and the heat sink 36, the emitter and the base extraction electrode are formed. 37. Here, the metal plate 31 half-pressed in the previous process,
That is, the step of removing the metal plate 31 between the heat sink 36 and the emitter / base extraction electrode 37 is performed by using the insulating resin 4 using the through hole 42 formed in the insulating resin 41.
This is a step of pressing the metal plate 31 below the through-hole 42 from the surface of the metal plate 31. In an example of the embodiment of the present invention, as shown in FIG. 4, the metal plate 31 having the through hole 42 is installed on the press table 32, and the press machine recognizes the position of the through hole 42. Then, the metal plate 31 is punched through the through-hole 42.
By pressing, in the previous process, it is already 1/2 to 4/5
The metal plate 31 that has been extracted to a certain extent is completely removed. As a result, the heat sink 36 can be separated from the emitter and the base extraction electrode 37.

In the step of removing the metal plate 31, the heat sink 36, the emitter, and the base extraction electrode 37 are separated from the back surface of the metal plate 31 by polishing, cutting, etching, laser metal evaporation, or the like. In addition, the number of steps can be reduced, and the cost can be significantly reduced.

Next, as shown in FIG. 9A, there is a step of forming an electrode portion on the back surface of the metal plate 31 separated into the heat sink 36, the emitter, and the base extraction electrode 37. By the above-described steps, the insulating resin 41 is not attached to the fracture surface 35 and the back surface of the metal plate 31 of the heat sink 36 and the extraction electrode 37, and the metal plate 31 is exposed. Therefore, for example, in consideration of the oxidation of the surface of the metal plate made of Cu and the melting property of the solder that is the material for forming the electrode 44 on the bottom surface of the metal plate, the heat sink 36 and the extraction electrode 37 are formed of Ag plating, Au plating, nickel plating, or the like is applied to the fracture surface 35 and the back surface. Then, the heat sink 36 and the extraction electrode 3
The electrode portion is completed by fixing the solder 44 to only the rear surface of the metal plate 31 of 7, for example, by screen printing or the like.

FIG. 9B shows another embodiment.
As shown in FIG. 8, in the step of separating the heat sink 36 from the emitter and base extraction electrode 37 described in FIG. 8, the fractured surface 35 of the metal plate 31 after the metal plate 31 has been removed and the exposed portion of the back surface are removed. It may be removed by polishing, cutting, etching or the like. In this embodiment, a resist 43 is applied to the entire back surface where the metal plate 31 and the insulating resin 41 are exposed. At this time, the resist 43 is formed so as to have a thickness of about 40 μm. Then, the resist 43 on the back surface of the heat sink 36, the emitter, and the base extraction electrode 37, which are the portions for extending the wiring on the mounting board, is removed by etching. The electrode portion is completed by fixing the solder 44 to the removed portion.

Next, as shown in FIG. 10A, a plurality of semiconductor devices formed on the metal plate 31 are divided into individual semiconductor devices to separate individual devices as shown in FIG. As a result, the semiconductor device used in the hybrid integrated circuit device according to the present invention is completed. Dicing blade 45 for division
Then, the electrode portion 44 formed on the back surface of the metal plate 31 is directly recognized by a dicing machine, and the metal plate 31 is cut vertically and horizontally along a dicing line 46. The dicing line 46 is connected to the heat sink 36 of the adjacent semiconductor device.
Since it is located at the center of the insulating resin layer between the electrode and the emitter and base extraction electrodes 37, smooth dicing can be performed.

Finally, by incorporating the above-described semiconductor device with a built-in power transistor into the hybrid integrated circuit shown in FIG. 2A, the method of manufacturing a hybrid integrated circuit device according to the present invention is completed.

At this time, as described above, by preparing in advance a semiconductor device including the power transistor 38, the thin metal wire 40 for electrically connecting the power transistor 38 to the emitter and the base extraction electrode 37, and the like, In the assembly process of the hybrid integrated circuit device, the semiconductor device is die-bonded with a chip mounter or the like, so that the wire bonding process of the thin metal wires 40 can be omitted and a simple assembly process can be realized.

The method of manufacturing a semiconductor device according to the present invention and the method of manufacturing a hybrid integrated circuit device using the same are not limited to the above-described embodiments. For example, as a semiconductor device to be incorporated in a hybrid integrated circuit device, a power MOSFET, an IG
BT, SIT, Tr for driving large current, I for driving large current
The above embodiment can also be applied to a case where a power semiconductor element which is used with a large current and requires heat dissipation, such as a C (MOS, BIP, Bi-CMOS) memory element, is used. In addition, by adjusting the thickness of the metal plate by the half blanking process described above, it is possible to use a semiconductor device incorporating a semi-power semiconductor element such as a semi-power transistor and a small-signal semiconductor element such as a small-signal transistor, which do not require much heat radiation. And a method of manufacturing the same. In addition, various changes can be made without departing from the spirit of the present invention.

[0049]

According to the method of manufacturing a semiconductor device of the present invention, a step of half-pressing a metal plate to provide a large number of units having a heat sink and an extraction electrode arranged at a position close to the heat sink is formed as a projection. Fixing a bare chip of a semiconductor element to the heat sink of each unit of the metal plate; connecting an electrode of the semiconductor element of each unit of the metal plate to the extraction electrode; A step of integrally molding each unit with an insulating resin, a step of removing a concave portion between the heat sink and the extraction electrode of each unit from a surface of the insulating resin, and cutting the insulating resin. Separating the individual units. Accordingly, it is possible to provide a method of manufacturing a semiconductor device in which a large number of semiconductor devices each having the semiconductor element embedded on the metal plate can be formed at one time, and the manufacturing process and the manufacturing cost can be greatly improved. Can be.

Further, according to the method of manufacturing a semiconductor device of the present invention, preferably, in the step of removing a concave portion between the heat sink and the extraction electrode of each unit from a surface of the insulating resin, By forming a plurality of through holes at the same time when the respective units are integrally molded with an insulating resin, the unit can be removed by pressing a concave portion between the heat sink and the extraction electrode through the through holes. . As a result, compared with the step of separating the heat sink and the extraction electrode from the back surface of the metal plate by polishing, cutting, etching, laser metal evaporation, and the like, the number of steps can be significantly reduced, and the cost can be reduced. Can also be significantly reduced.

Further, according to the method of manufacturing a semiconductor device of the present invention, preferably, in a transfer molding step of a semiconductor device used for a hybrid integrated circuit device, a plurality of semiconductor devices formed on a metal plate are insulated by transfer molding. Since the conductive resin is integrally molded, the mold for transfer molding must be one that matches the size of the frame.
With such a set, transfer molding can be performed using the same mold regardless of the size of the semiconductor device, so that significant cost reduction can be achieved.

Further, according to the method of manufacturing a hybrid integrated circuit device of the present invention, as described above, by preparing a semiconductor device incorporating the semiconductor element, the thin metal wire, and the like as a preparation step, the hybrid integrated circuit device is prepared. In a circuit device assembling process, a hybrid integrated circuit that realizes a simple assembling process by die bonding the semiconductor device with a chip mounter or the like to omit a wire bonding process of the fine metal wire or a die bonding process of the semiconductor element. A method for manufacturing the device can be provided.

[Brief description of the drawings]

FIG. 1A is a cross-sectional view of a hybrid integrated circuit device of the present invention, and FIG.

2A is a circuit diagram of a hybrid integrated circuit device according to the present invention, and FIG.

FIG. 3 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 4 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 5 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 6 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 7 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 8 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 9 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 10 is a diagram illustrating a method of manufacturing a hybrid integrated circuit device according to the present invention.

FIG. 11 is a circuit diagram of a conventional hybrid integrated circuit device.

Claims (25)

[Claims] A step of half-pressing a metal plate to provide a large number of sets of units each including a heat sink and a take-out electrode disposed at a position close to the heat sink; Fixing the bare chip of the semiconductor element to the metal plate, connecting the electrode of the semiconductor element and the extraction electrode of each unit of the metal plate, and integrally molding each unit of the metal plate with an insulating resin. Removing the concave portion between the heat sink and the extraction electrode of each unit from the surface of the insulating resin; and cutting the insulating resin to separate the unit into individual units. A method for manufacturing a semiconductor device, comprising: 2. In the step of half-pressing the metal plate, the metal plate is を to ／ of the thickness of the metal plate.
2. The method for manufacturing a semiconductor device according to claim 1, wherein the degree is extracted. 3. The method according to claim 2, wherein in the step of integrally molding the insulating resin, a plurality of through holes are simultaneously formed in the insulating resin on the metal plate between the heat sink and the extraction electrode of each unit. The method for manufacturing a semiconductor device according to claim 1. 4. In the step of removing a concave portion between the heat sink and the extraction electrode of each unit, the metal plate extracted by the half press is pressed through the through hole to form the heat sink and the extraction electrode. 2. The method according to claim 1, wherein said metal plate is removed.
A method for manufacturing a semiconductor device according to any one of claims 1 to 3. 5. The method according to claim 1, wherein the heat sink and the extraction electrode are made of a copper plate or a silver plate. 6. The method according to claim 1, wherein said connecting means is formed by wire bonding. 7. The power semiconductor device, wherein:
2. The method according to claim 1, wherein one of a semi-power semiconductor element and a small signal semiconductor element is fixed. 8. A step of half-pressing a metal plate to provide a plurality of sets of units each having a convex portion with a heat sink and an extraction electrode arranged at a position close to the heat sink, and the heat sink of each unit of the metal plate Fixing the bare chip of the semiconductor element to the metal plate, connecting the electrode of the semiconductor element and the extraction electrode of each unit of the metal plate, and integrally molding each unit of the metal plate with an insulating resin. Removing the bottom of the heat sink and the extraction electrode of each unit from the surface of the insulating resin; and removing the bottom of the heat sink and the extraction electrode of each unit from the back surface of the metal plate. And a step of cutting the insulating resin to separate into individual units. A method for manufacturing a conductor device. 9. In the step of half-pressing the metal plate, the metal plate is １ ／ to 金属 of the thickness of the metal plate.
9. The method for manufacturing a semiconductor device according to claim 8, wherein the degree is extracted. 10. In the step of integrally molding the insulating resin, a plurality of through holes are simultaneously formed in the insulating resin on a metal plate between the heat sink and the extraction electrode of each unit. The method for manufacturing a semiconductor device according to claim 8. 11. The step of removing a concave portion between the heat sink and the extraction electrode of each of the units includes pressing the metal plate extracted by the half press through the through-hole to form the heat sink and the extraction electrode. The method for manufacturing a semiconductor device according to claim 8, wherein the metal plate is removed between the metal plates. 12. The semiconductor device according to claim 8, wherein in the step of removing the bottom of the heat sink and the extraction electrode of each unit from the back surface of the metal plate, the metal plate is cut from the back surface. Production method. 13. The step of removing the concave portion between the heat sink and the extraction electrode of each unit from the back surface of the metal plate, first cutting from the back surface of the metal plate, and thereafter etching from the cut surface. 9. The method for manufacturing a semiconductor device according to claim 8, wherein 14. The method according to claim 8, wherein the heat sink and the extraction electrode are formed of a copper plate or a silver plate. 15. The method according to claim 8, wherein said connecting means is formed by wire bonding. 16. The method according to claim 8, wherein the semiconductor element is any one of a power semiconductor element, a semi-power semiconductor element, and a small signal semiconductor element. 17. A step of half-pressing a metal plate to provide a large number of sets of units each including a heat sink and a lead-out electrode disposed in a position close to the heat sink, the unit comprising: Fixing the bare chip of the semiconductor element to the metal plate, connecting the electrode of the semiconductor element and the extraction electrode of each unit of the metal plate, and integrally molding each unit of the metal plate with an insulating resin. Removing the concave portion between the heat sink and the extraction electrode of each unit from the surface of the insulating resin; cutting the insulating resin to separate the unit into individual units; Incorporating a plurality of conductive patterns on a mounting substrate on which a plurality of conductive patterns are formed. Law. 18. The method according to claim 18, wherein in the step of half-pressing the metal plate, the thickness of the metal plate is set to 1/2 to 4 /
18. The method of manufacturing a hybrid integrated circuit device according to claim 17, wherein about five are extracted. 19. The method according to claim 19, wherein in the step of integrally molding the insulating resin, a plurality of through holes are simultaneously formed in the insulating resin on the metal plate between the heat sink and the extraction electrode of each unit. 18. The method of manufacturing a hybrid integrated circuit device according to claim 17, wherein 20. In the step of removing a concave portion between the heat sink and the extraction electrode of each unit, the metal plate extracted by the half press is pressed through the through hole to form the heat sink and the extraction electrode. 20. The method of manufacturing a hybrid integrated circuit device according to claim 17, wherein said metal plate between said metal plates is removed. 21. The hybrid integrated circuit according to claim 17, wherein in the step of incorporating the unit into the mounting substrate on which a plurality of conductive patterns are formed, the unit is fixed to the conductive pattern via a brazing material. A method for manufacturing a circuit device. 22. The method according to claim 17, wherein the heat sink and the extraction electrode are made of a copper plate or a silver plate. 23. The method for manufacturing a hybrid integrated circuit device according to claim 17, wherein the mounting substrate is a metal plate whose surface is insulated. 24. The method according to claim 17, wherein said connecting means is formed by wire bonding. 25. The method according to claim 17, wherein the semiconductor element is any one of a power semiconductor element, a semi-power semiconductor element, and a small signal semiconductor element.