JP2002279892A - Manufacturing method of electron emission element, electron emission element, charging device and image forming device - Google Patents
Manufacturing method of electron emission element, electron emission element, charging device and image forming deviceInfo
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- JP2002279892A JP2002279892A JP2001080179A JP2001080179A JP2002279892A JP 2002279892 A JP2002279892 A JP 2002279892A JP 2001080179 A JP2001080179 A JP 2001080179A JP 2001080179 A JP2001080179 A JP 2001080179A JP 2002279892 A JP2002279892 A JP 2002279892A
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Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、電子放出素子の
製造方法、電子放出素子、帯電装置及び画像形成装置に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electron-emitting device, an electron-emitting device, a charging device, and an image forming device.
【０００２】[0002]
【従来の技術】従来、最も一般的な帯電装置の一つとし
て、コロナ放電を用いた帯電装置が挙げられるが、これ
は非常に多くのオゾン、NOxを発生するという欠点を有
している。このオゾン、NOxの発生は、コロナ帯電装置
から放出される電子の運動エネルギーが非常に大きく、
大気中のＯ２、Ｎ２を電離させることが原因である。2. Description of the Related Art Heretofore, one of the most common charging devices is a charging device using corona discharge, which has a drawback that it generates a great deal of ozone and NOx. Ozone and NOx are generated because the kinetic energy of the electrons emitted from the corona charger is very large,
This is caused by ionizing O 2 and N 2 in the atmosphere.
【０００３】また、電子写真装置における帯電装置は、
一般に60μｍ程度のワイヤに高圧を印加して、放電を発
生させるコロナ放電器であるが、上記のとおり、多くの
放電生成物を発生させる。A charging device in an electrophotographic apparatus is
Generally, a corona discharger generates a discharge by applying a high voltage to a wire of about 60 μm, but generates a large number of discharge products as described above.
【０００４】そこで、特開平9-114192号公報に開示の技
術では、オゾンの発生量を低減する手段が提案されてい
る。これは、非常に細い、４０〜５０μｍのワイヤを用
いて放電を行うことによりオゾンの発生量を５０％以下
に低減している。0Therefore, in the technology disclosed in Japanese Patent Application Laid-Open No. 9-114192, means for reducing the amount of generated ozone has been proposed. This is to reduce the amount of generated ozone to 50% or less by performing discharge using a very thin wire of 40 to 50 μm. 0
【０００５】また、特開平6-324556号公報には、ワイヤ
の３方を囲むように配置された金属筐体と解放部近傍に
金属メッシュ電極を配置し、ワイヤから発生したオゾン
を閉じこめ、オゾン分子の衝突確率を高めることにより
放出されるオゾン量の低減を図る技術が開示されてい
る。[0005] Japanese Patent Application Laid-Open No. 6-324556 discloses a metal housing arranged so as to surround three sides of a wire and a metal mesh electrode arranged near an open portion to confine ozone generated from the wire, A technique for reducing the amount of released ozone by increasing the probability of collision of molecules is disclosed.
【０００６】[0006]
【発明が解決しようとする課題】しかし、特開平9-1141
92号公報、特開平6-324556号公報に開示の技術では、せ
いぜい５０％程度のオゾン量の低減しか出来ず、オゾン
吸着剤等の併用が必要であった。そして、この吸着剤は
経時劣化が生じるためにオゾンフィルタの交換、メンテ
ナンスが必要であった。However, Japanese Patent Application Laid-Open No. 9-1141 discloses
In the technology disclosed in Japanese Patent Application Laid-Open No. 92-324556 and Japanese Patent Application Laid-Open No. Hei 6-324556, the amount of ozone can be reduced by only about 50% at most, and it is necessary to use an ozone adsorbent or the like in combination. Then, the adsorbent is exchanged ozone filter to deterioration over time occurs, maintenance was required.
【０００７】また、近年の社会動向においては、ＵＬ規
格、ＴＵＶ規格、ＢＡＭ規格など、複数の国、地域で、
複数の団体により電子写真方式の画像形成装置に対して
発生するオゾン量を規制するための規格が設定されてい
る。[0007] In addition, in recent years of social trends, UL standard, TUV standards, such as BAM standards, a number of countries, in the region,
A plurality of organizations have set standards for regulating the amount of ozone generated in an electrophotographic image forming apparatus.
【０００８】これらに対応するため、半導体からなる電
子放出素子Ａを用いた帯電装置及びこれを用いた電子写
真装置を使用することが考えられる（特願2000-76511明
細書を参照）。このような帯電装置によれば、放電生成
物を全く発生しない帯電が可能となる。In order to cope with these problems, it is conceivable to use a charging device using an electron-emitting device A made of a semiconductor and an electrophotographic device using the same (see Japanese Patent Application No. 2000-76511). According to such a charging device, it is possible to perform charging without generating any discharge product.
【０００９】かかる技術では、電子放出面の形状は、各
々の装置目的に合わせた形状とすることが必要となって
くる。例えば、電子写真装置用の帯電装置の場合、画像
を形成する被記録体幅以上の長さを有する帯電装置を製
作する必要が生じる。In this technique, the shape of the electron emission surface needs to be adjusted to the purpose of each device. For example, in the case of a charging device for an electrophotographic device, it is necessary to manufacture a charging device having a length equal to or greater than the width of a recording medium on which an image is formed.
【００１０】ところで、最も一般的な半導体材料として
シリコンが挙げられるが、単結晶材料の場合、その大き
さについては制約があり、ポリシリコンのようにCVD法
によってシリコン材料を長尺基板に成膜する際は、基板
を高温に加熱する必要が生じるため、基板の耐熱性を所
定値以上及び冷却後の基板の収縮率を所定値以下とする
必要が生じ、この場合基板材料の制約が大きくなる。By the way, silicon is mentioned as the most common semiconductor material. However, in the case of a single crystal material, the size is limited, and a silicon material is formed on a long substrate by a CVD method like polysilicon. In this case, it is necessary to heat the substrate to a high temperature, so that the heat resistance of the substrate needs to be equal to or higher than a predetermined value and the shrinkage ratio of the substrate after cooling needs to be equal to or lower than a predetermined value. .
【００１１】一般的な金属基板上にポリシリコンを成膜
した場合、冷却後の収縮によりシリコン薄膜に割れ等の
劣化が生じ易い。また、タングステン、チタンなどを基
板として用いた場合、高温下においてシリコンと反応し
てシリサイドとなり易く、所望のポリシリコン薄膜を得
ることが困難であるという不具合がある。When a polysilicon film is formed on a general metal substrate, the silicon thin film is liable to be deteriorated such as a crack due to shrinkage after cooling. In addition, when tungsten, titanium, or the like is used as a substrate, it reacts with silicon at a high temperature to easily form silicide, and it is difficult to obtain a desired polysilicon thin film.
【００１２】上記の耐熱性、収縮率等の条件を満たす材
料として石英ガラスが挙げられるが、この場合は材料コ
ストの増加といった問題が生じる。As a material satisfying the above conditions such as heat resistance and shrinkage, quartz glass can be cited, but in this case, there is a problem that the material cost increases.
【００１３】また、一般にCVD法、スパッタ法による成
膜は、その成膜スピードが遅く、数μmレベルの膜厚を
短時間で得るのが困難であり、さらに、装置自体が高価
であるため、この場合製造コストの増加といった不具合
が生じる。Further, in general, film formation by the CVD method or the sputtering method is slow, and it is difficult to obtain a film thickness of several μm level in a short time, and the apparatus itself is expensive. In this case, a problem such as an increase in manufacturing cost occurs.
【００１４】この発明の目的は、電子放出素子の製造コ
ストを低減することである。An object of the present invention is to reduce the manufacturing cost of an electron-emitting device.
【００１５】この発明の目的は、高効率での電子放出が
可能となる電子放出素子を提供することである。An object of the present invention is to provide an electron-emitting device capable of emitting electrons with high efficiency.
【００１６】この発明の目的は、半導体層と絶縁層から
なる微細構造を複数形成することを可能とすることであ
る。An object of the present invention is to make it possible to form a plurality of fine structures including a semiconductor layer and an insulating layer.
【００１７】この発明の目的は、電子放出面内の電子放
出特性が均一である電子放出素子を提供することであ
る。An object of the present invention is to provide an electron-emitting device having uniform electron-emitting characteristics in an electron-emitting surface.
【００１８】この発明の目的は、基板の製造を非常に簡
単な装置で行うことが可能とすることである。An object of the present invention is to make it possible to manufacture a substrate with a very simple apparatus.
【００１９】[0019]
【課題を解決するための手段】請求項１に記載の発明
は、基板上に半導体層、絶縁体層及び電極が順次積層さ
れてなり、電圧を印加することにより電子を放出する電
子放出素子を製造する電子放出素子製造方法において、
粒状の半導体材料を微粒子吹き付け法により前記基板上
に形成することで当該基板上に前記半導体材料からなる
前記半導体層と前記半導体材料が酸化又は窒化した前記
絶縁体層とを順次形成する第１の工程と、この第１の工
程後、前記絶縁体層上に電極を形成する第２の工程と、
を含んでなることを特徴とする電子放出素子の製造方法
である。According to a first aspect of the present invention, there is provided an electron-emitting device comprising a semiconductor layer, an insulator layer, and an electrode sequentially laminated on a substrate, and emitting electrons by applying a voltage. In the method for manufacturing an electron-emitting device,
First of the said semiconductor layer comprising a particulate semiconductor material from the semiconductor material on the substrate by forming on the substrate by fine spraying method the semiconductor material is sequentially formed and the insulating layer oxidized or nitrided a step, after the first step, a second step of forming an electrode on the insulator layer,
And a method for manufacturing an electron-emitting device.
【００２０】したがって、CVD法、スパッタ法等のプロ
セスで半導体層、絶縁体層を形成した場合と比較して、
成膜速度が早く、かつ、様々な材料の基板を用いること
が可能となるため、電子放出素子の製造コストの低減が
可能となる。Therefore, compared with the case where the semiconductor layer and the insulator layer are formed by processes such as the CVD method and the sputtering method,
Since the film formation speed is high and substrates of various materials can be used, the manufacturing cost of the electron-emitting device can be reduced.
【００２１】請求項２に記載の発明は、請求項１に記載
の電子放出素子の製造方法において、前記第１の工程
は、前記微粒子吹き付け法により前記半導体層と前記絶
縁体層が積層された微細構造を複数形成することを特徴
とする。According to a second aspect of the present invention, in the method of manufacturing an electron-emitting device according to the first aspect, in the first step, the semiconductor layer and the insulator layer are laminated by the fine particle spraying method. It is characterized by forming a plurality of fine structures.
【００２２】したがって、高効率での電子放出が可能と
なる電子放出素子を提供することができる。Therefore, it is possible to provide an electron-emitting device capable of emitting electrons with high efficiency.
【００２３】請求項３に記載の発明は、請求項２に記載
の電子放出素子の製造方法において、前記第１の工程
は、前記微細構造を陽極化成により形成することを特徴
とする。According to a third aspect of the present invention, in the method of manufacturing an electron-emitting device according to the second aspect, the first step includes forming the fine structure by anodization.
【００２４】したがって、簡便な装置を用いて、半導体
層の微細構造がナノスケールで形成され、その後これを
酸化することにより半導体層と絶縁層からなる微細構造
を複数形成することが可能となる。Therefore, the fine structure of the semiconductor layer is formed on a nano scale by using a simple device, and then, by oxidizing the fine structure, a plurality of fine structures including the semiconductor layer and the insulating layer can be formed.
【００２５】請求項４に記載の発明は、請求項１〜３の
何れかの一に記載の電子放出素子の製造方法において、
前記第１の工程は、前記基板として表面に微細な凹凸が
形成され、この凹凸が絶縁性でかつ前記電子放出を行う
ときの電子放出方向に対して略平行方向に配向している
ものを用いることを特徴とする。[0025] The invention described in claim 4 is the method of manufacturing an electron-emitting device according to any one of claims 1 to 3,
In the first step, a substrate having fine irregularities formed on the surface thereof, the irregularities being insulating and oriented in a direction substantially parallel to an electron emission direction when performing the electron emission is used in the first step. It is characterized by the following.
【００２６】したがって、半導体層の半導体材料は基板
の凹凸の中に入り込む形で電子放出方向に整列している
ため、電子放出面（基板と反対側）内の電子放出特性を
均一にすることができる。Therefore, since the semiconductor material of the semiconductor layer is aligned in the electron emission direction so as to enter the unevenness of the substrate, it is possible to make the electron emission characteristics in the electron emission surface (the side opposite to the substrate) uniform. it can.
【００２７】請求項５に記載の発明は、請求項４に記載
の電子放出素子の製造方法において、前記第１の工程
は、前記基板としてアルミニウム製で陽極酸化したもの
を用いることを特徴とする。According to a fifth aspect of the present invention, in the method of manufacturing an electron-emitting device according to the fourth aspect, the first step uses an anodized aluminum substrate as the substrate. .
【００２８】したがって、基板の製造を非常に簡単な装
置で行うことが可能となる。Therefore, it is possible to manufacture the substrate with a very simple apparatus.
【００２９】請求項６に記載の発明は、基板上に半導体
層、絶縁体層及び電極が順次積層されてなり、電圧を印
加することにより電子を放出する電子放出素子におい
て、前記絶縁体層は前記半導体層を形成する半導体材料
と同じ半導体材料の酸化物、窒化物又は窒化酸化物で形
成されていることを特徴とする電子放出素子である。According to a sixth aspect of the present invention, in the electron-emitting device in which a semiconductor layer, an insulator layer, and an electrode are sequentially laminated on a substrate and emit electrons when a voltage is applied, the insulator layer is An electron-emitting device comprising an oxide, nitride, or nitrided oxide of the same semiconductor material as the semiconductor material forming the semiconductor layer.
【００３０】したがって、半導体層、絶縁体層を微粒子
吹き付け法で形成することが可能となるため、CVD法、
スパッタ法等のプロセスで形成した場合と比較して、成
膜速度が早く、かつ、様々な材料の基板を用いることが
でき、電子放出素子の製造コストの低減が可能となる。Therefore, the semiconductor layer and the insulator layer can be formed by the fine particle spraying method.
Compared to the case where the film is formed by a process such as a sputtering method, a substrate can be formed with a higher film forming speed and with various materials, so that the manufacturing cost of the electron-emitting device can be reduced.
【００３１】請求項７に記載の発明は、請求項６に記載
の電子放出素子において、前記半導体層はシリコンで形
成され、前記絶縁体層はシリコン酸化物、シリコン窒化
物又はシリコン窒化酸化物で形成されていることを特徴
とする。According to a seventh aspect of the present invention, in the electron-emitting device according to the sixth aspect, the semiconductor layer is formed of silicon, and the insulator layer is formed of silicon oxide, silicon nitride, or silicon nitride oxide. It is characterized by being formed.
【００３２】したがって、シリコンを材料として、半導
体層、絶縁体層を微粒子吹き付け法で形成することが可
能となるため、CVD法、スパッタ法等のプロセスで形成
した場合と比較して、成膜速度が早く、かつ、様々な材
料の基板を用いることができ、電子放出素子の製造コス
トの低減が可能となる。Therefore, since the semiconductor layer and the insulator layer can be formed by a fine particle spraying method using silicon as a material, the film forming speed can be reduced as compared with the case where the semiconductor layer and the insulating layer are formed by a process such as a CVD method or a sputtering method. quickly, and it is possible to use a substrate of various materials, it is possible to reduce the cost of manufacturing the electron-emitting device.
【００３３】請求項８に記載の発明は、請求項６又は７
に記載の電子放出素子において、前記基板は、前記半導
体層側の表面に微細な凹凸が形成され、この凹凸が絶縁
性でかつ前記電子放出を行うときの電子放出方向に対し
て略平行方向に配向していることを特徴とする。The invention according to claim 8 is the invention according to claim 6 or 7
In the electron-emitting device according to the above, the substrate has fine irregularities formed on the surface on the semiconductor layer side, and the irregularities are insulative and substantially parallel to an electron emission direction when performing the electron emission. It is characterized by being oriented.
【００３４】したがって、半導体層の半導体材料は基板
の凹凸の中に入り込む形で電子放出方向に整列している
ため、電子放出面（基板と反対側）内の電子放出特性を
均一にすることができる。Therefore, since the semiconductor material of the semiconductor layer is aligned in the electron emission direction so as to enter the unevenness of the substrate, it is possible to make the electron emission characteristics in the electron emission surface (the side opposite to the substrate) uniform. it can.
【００３５】請求項９に記載の発明は、請求項８に記載
の電子放出素子において、前記基板は、アルミニウム製
で前記半導体層側の表面が酸化していることを特徴とす
る。According to a ninth aspect of the present invention, in the electron-emitting device according to the eighth aspect, the substrate is made of aluminum and the surface on the semiconductor layer side is oxidized.
【００３６】したがって、基板の製造を非常に簡単な装
置で行うことが可能となる。Therefore, it is possible to manufacture a substrate with a very simple apparatus.
【００３７】請求項１０に記載の発明は、請求項６〜９
の何れかの一に記載の電子放出素子を備えていることを
特徴とする帯電装置である。[0037] The invention according to claim 10, claim 6-9
A charging device comprising the electron-emitting device according to any one of the above.
【００３８】したがって、請求項６〜９の何れかの一に
記載の発明と同様の作用、効果を奏することができる。Therefore, the same operation and effect as the invention according to any one of claims 6 to 9 can be obtained.
【００３９】請求項１１に記載の発明は、請求項１０に
記載の帯電装置を感光体の帯電用に備えていることを特
徴とする電子写真方式の画像形成装置である。An eleventh aspect of the present invention is an electrophotographic image forming apparatus comprising the charging device of the tenth aspect for charging a photosensitive member.
【００４０】したがって、請求項１０に記載の発明と同
様の作用、効果を奏する。[0040] Accordingly, it brings the same operation and effect as those of the invention described in claim 10, the effect.
【００４１】[0041]
【発明の実施の形態】この発明の一実施の形態について
説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described.
【００４２】まず、この発明の一実施の形態である電子
放出素子Ａの製造方法について説明する。First, a method for manufacturing an electron-emitting device A according to an embodiment of the present invention will be described.
【００４３】図１は、かかる製造方法に用いる製造装置
の説明図である。FIG. 1 is an explanatory view of a manufacturing apparatus used in such a manufacturing method.
【００４４】（１）まず、原材料粉末を、例えば直径が
１ｍｍ程度のセラミクス製のボールなどと共にボールミ
ル等により粉砕して、平均粒径が数十ｎｍ〜数百ｎｍの
均一な大きさの超微粒子粉状の微粒子１にする。(1) First, the raw material powder is pulverized with a ball mill or the like together with a ceramic ball having a diameter of about 1 mm, for example, to obtain ultrafine particles having an average particle size of several tens nm to several hundreds nm. Powder 1 is obtained.
【００４５】（２）ここで得られた微粒子１を、ガス／
微粒子混合用器２に投入する。ガス／微粒子混合用器２
は搬送管３を介して膜形成室４と連通している。そし
て、ガス／微粒子混合用器２にはガス流入弁５を介して
ガス（空気）が導入され、膜形成室４内は真空ポンプ６
により吸引される。膜形成室４内には予め基板７を用意
しておく。微粒子１は、ガス／微粒子混合用器２と膜形
成室４との圧力差により加速され、数百ｍ／ｓｅｃの速
度でノズル８から噴射されることにより、基板７上に微
粒子堆積膜９が形成される。この場合に、基板７は加熱
する（微粒子吹き付け法）（第１の工程）。(2) The fine particles 1 obtained here were mixed with gas /
It is charged into the fine particle mixing device 2. Gas / Particle Mixer 2
Is in communication with the film formation chamber 4 via the transfer pipe 3. Gas (air) is introduced into the gas / particle mixing device 2 through a gas inflow valve 5, and a vacuum pump 6
Is sucked. A substrate 7 is prepared in the film forming chamber 4 in advance. The fine particles 1 are accelerated by the pressure difference between the gas / fine particle mixing device 2 and the film forming chamber 4 and are ejected from the nozzle 8 at a speed of several hundred m / sec, whereby the fine particle deposition film 9 is formed on the substrate 7. It is formed. In this case, the substrate 7 is heated (fine particle spraying method) (first step).
【００４６】（３）このように基板７上に形成された微
粒子堆積膜９の上に薄膜電極１２（図１において図示せ
ず）を形成して、電子放出素子Ａとする（第２の工
程）。[0046] (3) thus forming a thin film electrode 12 on the particle-deposited film 9 formed on the substrate 7 (not shown in FIG. 1), the electron-emitting devices A (second step ).
【００４７】ところで、一般に半導体素子から放出され
る電子の運動エネルギーは、コロナ放電によるものと比
較すると小さく、大気中の気体分子の電離をほとんど起
こさず、CO３ −、O２ −イオンなどの負イオンを生成す
ることが可能である。さらに帯電を行う場合は、これら
が被帯電物に到達する、あるいは、電子が直接被帯電物
に到達する現象を利用することにより帯電を行うため、
帯電によるオゾン等、放電生成物が発生しない。In general, the kinetic energy of electrons emitted from a semiconductor element is smaller than that of corona discharge, hardly causes ionization of gas molecules in the atmosphere, and negative ions such as CO 3 − and O 2 − ions. It is possible to generate ions. In the case of further charging, the charge reaches the object to be charged, or the charge is performed by utilizing a phenomenon in which electrons directly reach the object to be charged.
No discharge products such as ozone due to charging are generated.
【００４８】図２は、図１を参照して説明した微粒子吹
き付け法により基板７上に微粒子堆積膜９を形成して製
造された電子放出素子Ａに電圧を印加する場合の概念図
である。この電子放出素子Ａは、半導体層１３の上に絶
縁体層１１、薄膜電極１２が順次形成されてなるもので
ある。すなわち、前記の製造方法により吹き付けられる
微粒子１で形成された微粒子堆積膜９は半導体層１３と
なる、そして、微粒子１の外周が絶縁性材料で覆われて
いて、その絶縁性材料が絶縁体層１１となる。このた
め、微粒子堆積膜の断面構造が図２のようになり、前記
のような微粒子１の吹き付け工程のみで、半導体層１３
と絶縁体層１１が積層された微細構造が複数形成され、
この上に薄膜電極１２を形成して電子放出素子Ａとす
る。FIG. 2 is a conceptual diagram in the case where a voltage is applied to the electron-emitting device A manufactured by forming the fine particle deposition film 9 on the substrate 7 by the fine particle spraying method described with reference to FIG. The electron-emitting device A is obtained by sequentially forming an insulator layer 11 and a thin-film electrode 12 on a semiconductor layer 13. That is, the fine particle deposition film 9 formed by the fine particles 1 sprayed by the above-described manufacturing method becomes the semiconductor layer 13, and the outer periphery of the fine particles 1 is covered with an insulating material. It becomes 11. For this reason, the sectional structure of the fine particle deposition film is as shown in FIG. 2, and the semiconductor layer 13 is formed only by the step of spraying the fine particles 1 as described above.
And a plurality of microstructures in which the insulator layer 11 is laminated,
The thin-film electrode 12 is formed thereon to obtain an electron-emitting device A.
【００４９】一般に、図２に示すような構成では、半導
体層１３中のフェルミ準位近傍の電子がトンネル現象に
よりポテンシャル障壁を透過して絶縁体層１１の伝導帯
へ注入される。これは高抵抗であり大きな電位勾配が生
じているため、そこで加速されて薄膜電極１２の伝導帯
へ注入されホットエレクトロンとなる。この電位勾配が
電子放出のエネルギーに寄与するため、絶縁体層１１の
膜厚は所定値以下、印加電圧は所定値以上とする必要が
ある。In general, in the configuration shown in FIG. 2, electrons near the Fermi level in the semiconductor layer 13 penetrate the potential barrier by the tunnel phenomenon and are injected into the conduction band of the insulator layer 11. This is high in resistance and has a large potential gradient, and is accelerated there and injected into the conduction band of the thin film electrode 12 to become hot electrons. Since this potential gradient contributes to the energy of electron emission, it is necessary that the thickness of the insulator layer 11 be equal to or less than a predetermined value and the applied voltage be equal to or more than a predetermined value.
【００５０】一般には絶縁体層１１の膜厚は数μｍ程度
からそれ以下、印加電圧は１０V程度からそれ以上が必
要である。これら素子内部で生成したホットエレクトロ
ンのうち、薄膜電極１２の仕こと関数φ以上のエネルギ
ーを有するものは、この電極１２をトンネルし、電子放
出素子Ａ外部に所定の運動エネルギーを有して放出され
る。この薄膜電極１２は電子がトンネルすることを妨げ
ることのない範囲の膜厚で形成することが必要であり、
一般には数十nm以下である。In general, the thickness of the insulator layer 11 needs to be about several μm or less, and the applied voltage needs to be about 10 V or more. Among the hot electrons generated inside these elements, those having energy equal to or greater than the work function φ of the thin-film electrode 12 tunnel through this electrode 12 and are emitted outside the electron-emitting device A with a predetermined kinetic energy. that. The thin-film electrode 12 needs to be formed in a thickness that does not prevent electrons from tunneling.
Generally, it is several tens nm or less.
【００５１】図３、図４に示すように、半導体層１３を
シリコン半導体材料とした場合、半導体層１３と絶縁体
層（シリコン酸化物）１１からなる微細構造が複数形成
されている場合、この中を電子が多数回トンネルするた
めに、電子のドリフト長が伸び、容易にホットエレクト
ロン化して外部に放出されると考えられている。このた
め、良好な電子放出特性が得られる。As shown in FIGS. 3 and 4, when the semiconductor layer 13 is made of a silicon semiconductor material, and when a plurality of fine structures including the semiconductor layer 13 and the insulator layer (silicon oxide) 11 are formed, It is considered that the electron drifts long because electrons tunnel through it many times, and is easily converted into hot electrons and emitted to the outside. Therefore, good electron emission characteristics can be obtained.
【００５２】このように、この電子放出素子Ａは、電圧
の印加により電子放出機能を発現する素子であり、その
電子を放出する部位が半導体層１３と絶縁体層１１が積
層された微細構造が複数形成されている。このため、高
効率での電子放出が可能となる。これは以下のメカニズ
ムによるものである。以下の説明においては半導体層１
３としてシリコン、絶縁体層１１としてSiO２を例示し
てある。As described above, the electron-emitting device A is a device that exhibits an electron-emitting function when a voltage is applied. The electron-emitting portion has a fine structure in which the semiconductor layer 13 and the insulator layer 11 are laminated. A plurality is formed. Thus, highly efficient electron emission is possible. This is due to the following mechanism. In the following description, the semiconductor layer 1
3 is exemplified by silicon, and the insulator layer 11 is exemplified by SiO 2 .
【００５３】すなわち、前記微細構造は、陽極化成によ
って形成されている。陽極化成によれば、図１に例示す
るような簡便な製造装置によって、図４に示すような半
導体層１３の微細構造がナノスケールで形成され、その
後、これを酸化することにより半導体層１３と絶縁体層
１１からなる微細構造を複数形成することが可能とな
る。[0053] That is, the microstructure is formed by anodization. According to anodization, by simple manufacturing apparatus as illustrated in FIG. 1, the microstructure of semiconductor layer 13 as shown in FIG. 4 is formed at the nanoscale, then the semiconductor layer 13 by oxidizing this It becomes possible to form a plurality of fine structures composed of the insulator layer 11.
【００５４】このように微粒子１はシリコン材料であ
り、このシリコン材料が膜形成室４内で加熱されること
で、絶縁体層１１が形成される。すなわち、シリコンは
酸素中での加熱により酸化膜が、NOｘ中での加熱により
窒化酸化膜などとして絶縁体層１１が容易に形成され
る。よって、シリコン酸化膜、シリコン窒化膜、シリコ
ン窒化酸化膜の少なくとも一つから成り、これで覆われ
ている。このため膜形成室４内では、図５に示すよう
な、絶縁体層１１となる絶縁材料２１に覆われた半導体
層１３となる半導体粒子２２（微粒子１）が容易に得ら
れる。[0054] particles 1 thus is a silicon material, that this silicon material is heated by the film forming chamber 4, the insulating layer 11 is formed. That is, the insulator layer 11 is easily formed as an oxide film by heating in oxygen and as a nitrided oxide film by heating in NOx. Therefore, it is composed of at least one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film, and is covered with the same. Therefore, in the film forming chamber 4, semiconductor particles 22 (fine particles 1) serving as the semiconductor layer 13 covered with the insulating material 21 serving as the insulator layer 11 can be easily obtained as shown in FIG.
【００５５】ここで、酸化膜においてはダングリングボ
ンド等の欠陥がSi−SiO２界面近傍に存在し、これらが
熱酸化膜の界面不安定性を生じさせる原因と考えられて
おり、これは電子放出素子Ａの信頼性において障害とな
り得る。窒化酸化膜においては、その窒素原子濃度を１
０at％以下とすることで、信頼性と素子性能維持を両立
可能である。Here, defects such as dangling bonds exist in the oxide film near the Si—SiO 2 interface, and these are considered to be the causes of the interface instability of the thermal oxide film. This can be an obstacle in the reliability of the device A. In the nitrided oxide film, the nitrogen atom concentration is set to 1
By setting the content to 0 at% or less, both reliability and element performance maintenance can be achieved.
【００５６】前記の場合に、基板７の表面に微細な凹凸
を形成しておき、この凹凸面に前記の方法で微粒子１を
吹き付けることにより、図６の断面図に示すような電子
放出素子Ａが形成される。基板７の表面の凹凸は絶縁性
であり、電子放出方向に対して略平行方向に配向してい
る。図６に示すように、微細な凹凸が電子放出方向に略
平行方向に配向しているため、吹き付けられた半導体の
微粒子１は、凹凸の凹部の中に入り込む形で電子放出方
向に整列している。この素子の電子放出面（基板７と反
対側）に電子がトンネル可能な厚さで薄膜電極１２を形
成し、ここに電圧を印加すると、面内の電子放出特性が
均一な電子放出素子Ａを得ることが可能となる。In the above case, fine irregularities are formed on the surface of the substrate 7 and the fine particles 1 are sprayed on the irregular surface by the above-mentioned method, so that the electron-emitting device A shown in the sectional view of FIG. There is formed. The irregularities on the surface of the substrate 7 are insulative and oriented in a direction substantially parallel to the electron emission direction. As shown in FIG. 6, since the fine irregularities are oriented in a direction substantially parallel to the electron emission direction, the sprayed semiconductor fine particles 1 are aligned in the electron emission direction so as to enter the concave portions of the irregularities. I have. A thin-film electrode 12 is formed on the electron-emitting surface (the side opposite to the substrate 7) of this device with a thickness allowing electrons to tunnel, and when a voltage is applied thereto, an electron-emitting device A having uniform in-plane electron emission characteristics is formed. It is possible to obtain.
【００５７】この場合に、基板７をアルミニウム製とし
て、このアルミニウム製の基板７の表面を陽極酸化する
ことで表面に絶縁材料である酸化アルミニウムからなる
凹凸状の絶縁層２３を形成したものを用いれば（図７参
照）、図６に示すような基板７の製造を非常に簡単な図
１のような装置で行うことが可能となる。なお、一般に
アルミニウムの陽極酸化は、水を主成分とする溶媒を用
い、硫酸溶液中で電解を行うが、これに限定する必要は
ない。In this case, the substrate 7 is made of aluminum, and the surface of the aluminum substrate 7 is anodized to form an uneven insulating layer 23 made of aluminum oxide as an insulating material on the surface. In this case (see FIG. 7), it becomes possible to manufacture the substrate 7 as shown in FIG. 6 using a very simple apparatus as shown in FIG. In general, the anodic oxidation of aluminum is performed in a sulfuric acid solution using a solvent containing water as a main component, but it is not limited to this.
【００５８】ところで、アルミニウムを陽極酸化したも
のは、基板７と半導体の微粒子１との間に絶縁材料であ
る酸化アルミニウム２３を介した構造を有するため、駆
動電圧として直流を印加した場合これが抵抗となる。よ
って、抵抗が無い場合と比較して所定の電流を素子に流
すため、電圧を高くする必要が生じる場合がある。By the way, those of aluminum was anodized has a structure in which through the aluminum oxide 23 which is an insulating material between the substrate 7 and the particles 1 of the semiconductor, which is the resistance when applying a direct current as the drive voltage Become. Therefore, in order to pass a predetermined current through the element as compared with the case where there is no resistance, it may be necessary to increase the voltage.
【００５９】図７に示す電子放出素子Ａの場合、駆動電
圧として交流、若しくはパルス電圧を印加してもよい。
この場合、さらに薄膜電極１２と半導体の微粒子１との
間に絶縁体層２４を形成してもよい（図８、図９参
照）。図８、図９では、かかる構成における駆動時の模
式図を示してある。In the case of the electron-emitting device A shown in FIG. 7, an alternating current or a pulse voltage may be applied as the driving voltage.
In this case, an insulator layer 24 may be further formed between the thin film electrode 12 and the semiconductor fine particles 1 (see FIGS. 8 and 9). 8 and 9 are schematic diagrams at the time of driving in such a configuration.
【００６０】図８では薄膜電極１２側から半導体粒子層
（微粒子１）へ電子が流入しているが、酸化アルミニウ
ム層（絶縁層２３）により基板電極（基板７）に電子が
流れるのを抑制している。この状態から図９に示すの方
向に電圧が印加されると、半導体粒子層（微粒子１）に
蓄積された電子が電子放出素子Ａの外部に放出される。In FIG. 8, electrons flow into the semiconductor particle layer (fine particles 1) from the thin film electrode 12 side, but the aluminum oxide layer (insulating layer 23) suppresses the flow of electrons to the substrate electrode (substrate 7). ing. When a voltage is applied in the direction shown in FIG. 9 from this state, the electrons accumulated in the semiconductor particle layer (fine particles 1) are emitted to the outside of the electron-emitting device A.
【００６１】以上のようにして製造した電子放出素子Ａ
は、電子写真の画像形成プロセスで用いる帯電装置（図
示せず）に使用することができる。そして、この帯電装
置を感光体の帯電用として、電子写真方式の画像形成装
置（図示せず）に使用することができる。これらの帯電
装置、画像形成装置によれば、オゾンや、NOxがほとん
ど発生しない。The electron-emitting device A manufactured as described above
Can be used in a charging device (not shown) used in an electrophotographic image forming process. This charging device can be used in an electrophotographic image forming apparatus (not shown) for charging a photosensitive member. According to these charging devices and image forming devices, ozone and NOx are hardly generated.
【００６２】[0062]
【実施例】［実施例１］図１０に示す装置を用いて、Ti
製の基板７上にSi製の微粒子１を陽極化成し、多孔質化
した基板とした。これを図１１に示す装置で酸化し、半
導体層１３と絶縁体層１１（図１２参照）が積層された
微細構造が複数形成された構造を作製した。これに金製
の薄膜電極１２（図１２参照）を約10nmの厚さで蒸着
し、図１２に断面図で示すような電子放出素子Ａを作製
し、図１３に示す装置にて、負イオン生成の代用特性と
して、被帯電物（25μm厚のPETにAlを蒸着したもの）の
帯電を行い、そのときのオゾン、NOxの測定を行った。
各々の条件は以下の通りである。結果を図１６に示す。 ・Si基板作製方法：チタン基板上に微粒子吹き付け法に
よりSi微粒子を吹き付け、Si薄膜を1.5μm形成（基板温
度220℃）。 ・Si基板陽極化成条件： 化成液；HF／エタノール＝１／１（vol%)→Ti腐食防
止のため、テフロン（登録商標）テープで基板を覆った 化成槽温度；0℃ 500Wタングステンランプ照射 ・酸化条件： 酸化液；1mol／L硫酸水溶液→Ti腐食防止のため、テ
フロンテープで基板を覆った。 酸化槽温度；22℃ 遮光 ・評価条件 大気中、室温EXAMPLES Example 1 using the apparatus shown in FIG. 10, Ti
The microparticles 1 made of Si were anodized on a substrate 7 made of silicon to form a porous substrate. This was oxidized by the apparatus shown in FIG. 11 to produce a structure in which a plurality of microstructures in which the semiconductor layer 13 and the insulator layer 11 (see FIG. 12) were stacked were formed. A thin film electrode 12 (see FIG. 12) made of gold is deposited thereon to a thickness of about 10 nm to produce an electron-emitting device A as shown in a sectional view in FIG. As a substitute characteristic of generation, an object to be charged (25 μm thick PET with Al deposited thereon) was charged, and ozone and NOx at that time were measured.
Each condition is as follows. FIG. 16 shows the results.・ Si substrate fabrication method: Si fine particles are sprayed on a titanium substrate by a fine particle spray method to form a 1.5 μm Si thin film (substrate temperature 220 ° C.).・ Si substrate anodizing conditions: Chemical conversion solution; HF / ethanol = 1/1 (vol%) → To prevent Ti corrosion, the substrate was covered with Teflon (registered trademark) tape. Oxidation conditions: Oxidizing solution; 1 mol / L sulfuric acid aqueous solution → The substrate was covered with Teflon tape to prevent Ti corrosion. Oxidation bath temperature: 22 ° C Shading ・ Evaluation conditions Atmosphere, room temperature
【００６３】［実施例２］実施例１のSi基板作製方法に
おいて、前記のSi製の微粒子１の代わりに、表面がSiO
２でコートされたSi製の微粒子１を用い、この微粒子１
の堆積膜を得た。これに対し、陽極化成、酸化を行わな
かった以外は、実施例１と同様の実験を行った。結果を
図１６に示す。さらに、この実施例２においては、図１
４に示す装置で電子放出素子Ａ面内の放出電子のばらつ
きについての評価を、発光の面内のばらつきを目視評価
することで行った。[0063] In the Si substrate manufacturing method of Example 2 Example 1, in place of said Si-made fine particles 1, surface SiO
2 using Si fine particles 1 coated with
Was obtained. On the other hand, the same experiment as in Example 1 was performed, except that anodization and oxidation were not performed. FIG. 16 shows the results. Further, in the second embodiment, FIG.
4 was used to evaluate the variation of the emitted electrons in the plane of the electron-emitting device A by visually evaluating the variation in the plane of emission.
【００６４】［実施例３］実施例２のTi製の基板７をAl
製の基板７に代え、この基板７に対し以下の条件で陽極
化成を行った以外は、実施例２と同様に実験を行った。
結果を図１６に示す。 ・Al基板陽極化成条件 化成液：10wt%硫酸水溶液 化成槽温度：22℃ ［比較例１］実施例１の電子放出素子Ａを図１５に示す
コロナワイヤ４１にかえ、−４．２KVの直流を印加した
以外は、実施例１と同様の実験を行った。結果を図１６
に示す。Example 3 The substrate 7 made of Ti of Example 2 was
An experiment was performed in the same manner as in Example 2 except that the substrate 7 was anodized under the following conditions, instead of the substrate 7 made of
FIG. 16 shows the results. -Al substrate anodizing conditions Chemical solution: 10 wt% sulfuric acid aqueous solution Chemical bath temperature: 22 ° C [Comparative Example 1] The electron-emitting device A of Example 1 was replaced with a corona wire 41 shown in FIG. The same experiment as in Example 1 was performed except that the voltage was applied. FIG. 16 shows the results.
Shown in
【００６５】[0065]
【発明の効果】請求項１に記載の発明は、CVD法、スパ
ッタ法等のプロセスで半導体層、絶縁体層を形成した場
合と比較して、成膜速度が早く、かつ、様々な材料の基
板を用いることが可能となるため、電子放出素子の製造
コストの低減が可能となる。According to the first aspect of the present invention, as compared with a case where a semiconductor layer and an insulator layer are formed by a process such as a CVD method or a sputtering method, a film forming speed is higher and various materials can be formed. Since a substrate can be used, the manufacturing cost of the electron-emitting device can be reduced.
【００６６】請求項２に記載の発明は、請求項１に記載
の電子放出素子の製造方法において、高効率での電子放
出が可能となる電子放出素子を提供することができる。According to a second aspect of the present invention, in the method for manufacturing an electron-emitting device according to the first aspect, it is possible to provide an electron-emitting device capable of emitting electrons with high efficiency.
【００６７】請求項３に記載の発明は、請求項２に記載
の電子放出素子の製造方法において、簡便な装置を用い
て、半導体層の微細構造がナノスケールで形成され、そ
の後これを酸化することにより半導体層と絶縁層からな
る微細構造を複数形成することが可能となる。According to a third aspect of the present invention, in the method for manufacturing an electron-emitting device according to the second aspect, the fine structure of the semiconductor layer is formed on a nano-scale by using a simple apparatus, and then the oxide is oxidized. This makes it possible to form a plurality of microstructures including a semiconductor layer and an insulating layer.
【００６８】請求項４に記載の発明は、請求項１〜３の
何れかの一に記載の電子放出素子の製造方法において、
半導体層の半導体材料は基板の凹凸の中に入り込む形で
電子放出方向に整列しているため、電子放出面（基板と
反対側）内の電子放出特性を均一にすることができる。[0068] The invention described in claim 4 is the method of manufacturing an electron-emitting device according to any one of claims 1 to 3,
Since the semiconductor material of the semiconductor layer is aligned in the electron emission direction so as to enter the unevenness of the substrate, the electron emission characteristics in the electron emission surface (the side opposite to the substrate) can be made uniform.
【００６９】請求項５に記載の発明は、請求項４に記載
の電子放出素子の製造方法において、基板の製造を非常
に簡単な装置で行うことが可能となる。According to a fifth aspect of the present invention, in the method of manufacturing an electron-emitting device according to the fourth aspect, it is possible to manufacture a substrate with a very simple apparatus.
【００７０】請求項６に記載の発明は、半導体層、絶縁
体層を微粒子吹き付け法で形成することが可能となるた
め、CVD法、スパッタ法等のプロセスで形成した場合と
比較して、成膜速度が早く、かつ、様々な材料の基板を
用いることができ、電子放出素子の製造コストの低減が
可能となる。[0070] The invention according to claim 6, the semiconductor layer, since the insulating layer can be formed of a fine particle spray method, as compared with the case of forming by the CVD method, the process such as sputtering, deposition The film speed is high and substrates of various materials can be used, so that the manufacturing cost of the electron-emitting device can be reduced.
【００７１】請求項７に記載の発明は、請求項６に記載
の電子放出素子において、シリコンを材料として、半導
体層、絶縁体層を微粒子吹き付け法で形成することが可
能となるため、CVD法、スパッタ法等のプロセスで形成
した場合と比較して、成膜速度が早く、かつ、様々な材
料の基板を用いることができ、電子放出素子の製造コス
トの低減が可能となる。[0071] The invention described in claim 7 is the electron-emitting device according to claim 6, the silicon as the material, the semiconductor layer, it becomes possible to an insulator layer formed of a fine particle spray method, CVD method As compared with the case where the film is formed by a process such as a sputtering method, the film formation speed is faster and substrates of various materials can be used, so that the manufacturing cost of the electron-emitting device can be reduced.
【００７２】請求項８に記載の発明は、請求項６又は７
に記載の電子放出素子において、半導体層の半導体材料
は基板の凹凸の中に入り込む形で電子放出方向に整列し
ているため、電子放出面（基板と反対側）内の電子放出
特性を均一にすることができる。[0072] The invention according to claim 8, claim 6 or 7
In the electron-emitting device described in the above, the semiconductor material of the semiconductor layer is aligned in the electron-emitting direction in a manner of entering into the unevenness of the substrate, so that the electron-emitting characteristics on the electron-emitting surface (the side opposite to the substrate) are made uniform. can do.
【００７３】請求項９に記載の発明は、請求項８に記載
の電子放出素子において、基板の製造を非常に簡単な装
置で行うことが可能となる。According to the ninth aspect of the present invention, in the electron-emitting device according to the eighth aspect, the substrate can be manufactured with a very simple apparatus.
【００７４】請求項１０に記載の発明は、請求項６〜９
の何れかの一に記載の発明と同様の作用、効果を奏する
ことができる。The invention according to claim 10 is the invention according to claims 6 to 9
The same operation and effect as the invention described in any one of the above aspects can be obtained.
【００７５】請求項１１に記載の発明は、請求項１０に
記載の発明と同様の作用、効果を奏する。[0075] The invention of claim 11 is an invention similar to the effect of claim 10, an effect.
【図１】この発明の一実施の形態である電子放出素子の
製造方法を説明する説明図である。FIG. 1 is an explanatory diagram illustrating a method for manufacturing an electron-emitting device according to an embodiment of the present invention.
【図２】前記電子放出素子の動作を説明する説明図であ
る。FIG. 2 is an explanatory diagram for explaining the operation of the electron emission device.
【図３】同説明図である。FIG. 3 is an explanatory diagram of the same.
【図４】同説明図である。FIG. 4 is an explanatory diagram of the same.
【図５】前記電子放出素子の構造を説明する拡大縦断面
図である。FIG. 5 is an enlarged vertical sectional view illustrating the structure of the electron-emitting device.
【図６】同拡大縦断面図である。FIG. 6 is an enlarged vertical sectional view of the same.
【図７】同拡大縦断面図である。FIG. 7 is an enlarged vertical sectional view of the same.
【図８】前記電子放出素子の動作を説明する説明図であ
る。FIG. 8 is an explanatory diagram illustrating an operation of the electron-emitting device.
【図９】同説明図である。FIG. 9 is an explanatory diagram of the same.
【図１０】この発明の実施例を説明する説明図である。FIG. 10 is an explanatory diagram illustrating an embodiment of the present invention.
【図１１】同説明図である。FIG. 11 is an explanatory diagram of the same.
【図１２】同説明図である。FIG. 12 is an explanatory diagram of the same.
【図１３】同説明図である。FIG. 13 is an explanatory diagram of the same.
【図１４】同説明図である。FIG. 14 is an explanatory diagram of the same.
【図１５】同説明図である。FIG. 15 is an explanatory diagram of the same.
【図１６】同説明図である。FIG. 16 is an explanatory view of the same.
Ａ 電子放出素子 ７ 基板 １１ 絶縁体層 １２ 電極 １３ 半導体層 A Electron-emitting device 7 Substrate 11 Insulator layer 12 Electrode 13 Semiconductor layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 庄子 浩義 東京都大田区中馬込１丁目３番６号 株式 会社リコー内 Ｆターム(参考） 2H200 FA01 FA07 HA14 HB14 HB43 HB45 HB48 MA01 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Hiroyoshi Shoko 1-3-6 Nakamagome, Ota-ku, Tokyo F-term in Ricoh Co., Ltd. (Reference) 2H200 FA01 FA07 HA14 HB14 HB43 HB45 HB48 MA01
Claims (11)
順次積層されてなり、電圧を印加することにより電子を
放出する電子放出素子を製造する電子放出素子製造方法
において、 粒状の半導体材料を微粒子吹き付け法により前記基板上
に形成することで当該基板上に前記半導体材料からなる
前記半導体層と前記半導体材料が酸化又は窒化した前記
絶縁体層とを順次形成する第１の工程と、 この第１の工程後、前記絶縁体層上に電極を形成する第
２の工程と、を含んでなることを特徴とする電子放出素
子の製造方法。1. A method for manufacturing an electron-emitting device in which a semiconductor layer, an insulator layer, and an electrode are sequentially laminated on a substrate, and the electron-emitting device emits electrons by applying a voltage, the method comprising the steps of: Forming a semiconductor layer made of the semiconductor material and the insulator layer formed by oxidizing or nitriding the semiconductor material on the substrate by forming the semiconductor layer on the substrate by a fine particle spraying method. After the first step, a second step of forming an electrode on the insulator layer.
法により前記半導体層と前記絶縁体層が積層された微細
構造を複数形成することを特徴とする請求項１に記載の
電子放出素子の製造方法。2. The electron emission device according to claim 1, wherein in the first step, a plurality of fine structures in which the semiconductor layer and the insulator layer are stacked are formed by the fine particle spraying method. Production method.
化成により形成することを特徴とする請求項２に記載の
電子放出素子の製造方法。3. The method according to claim 2, wherein in the first step, the fine structure is formed by anodization.
に微細な凹凸が形成され、この凹凸が絶縁性でかつ前記
電子放出を行うときの電子放出方向に対して略平行方向
に配向しているものを用いることを特徴とする請求項１
〜３の何れかの一に記載の電子放出素子の製造方法。4. In the first step, fine irregularities are formed on the surface of the substrate, and the irregularities are insulative and oriented in a direction substantially parallel to an electron emission direction when performing the electron emission. 2. The method according to claim 1, wherein
4. The method for manufacturing an electron-emitting device according to any one of items 1 to 3,
ミニウム製で陽極酸化したものを用いることを特徴とす
る請求項４に記載の電子放出素子の製造方法。5. The method according to claim 4, wherein in the first step, an anodized aluminum substrate is used as the substrate.
順次積層されてなり、電圧を印加することにより電子を
放出する電子放出素子において、 前記絶縁体層は前記半導体層を形成する半導体材料と同
じ半導体材料の酸化物、窒化物又は窒化酸化物で形成さ
れていることを特徴とする電子放出素子。6. A semiconductor layer on a substrate, the insulating layer and the electrode is being sequentially laminated, in the electron emitting device which emits electrons by applying a voltage, the semiconductor said insulator layer for forming the semiconductor layer An electron-emitting device formed using an oxide, nitride, or nitrided oxide of the same semiconductor material as the material.
記絶縁体層はシリコン酸化物、シリコン窒化物又はシリ
コン窒化酸化物で形成されていることを特徴とする請求
項６に記載の電子放出素子。7. The electron-emitting device according to claim 6, wherein the semiconductor layer is formed of silicon, and the insulator layer is formed of silicon oxide, silicon nitride, or silicon nitride oxide. .
細な凹凸が形成され、この凹凸が絶縁性でかつ前記電子
放出を行うときの電子放出方向に対して略平行方向に配
向していることを特徴とする請求項６又は７に記載の電
子放出素子。8. The substrate has fine irregularities formed on a surface on the semiconductor layer side, and the irregularities are insulative and oriented in a direction substantially parallel to an electron emission direction when performing the electron emission. The electron-emitting device according to claim 6, wherein:
体層側の表面が酸化していることを特徴とする請求項８
に記載の電子放出素子。9. The semiconductor device according to claim 8, wherein the substrate is made of aluminum and the surface on the semiconductor layer side is oxidized.
3. The electron-emitting device according to item 1.
子放出素子を備えていることを特徴とする帯電装置。10. A charging device comprising the electron-emitting device according to claim 6. Description:
の帯電用に備えていることを特徴とする電子写真方式の
画像形成装置。11. An electrophotographic image forming apparatus comprising the charging device according to claim 10 for charging a photosensitive member.
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|---|---|---|---|
| JP2001080179A JP2002279892A (en) | 2001-03-21 | 2001-03-21 | Manufacturing method of electron emission element, electron emission element, charging device and image forming device |
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