CN109346518B - Micro-cavity plasma transistor and preparation method thereof - Google Patents
Micro-cavity plasma transistor and preparation method thereof Download PDFInfo
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
Abstract
The invention discloses a microcavity plasma transistor and a preparation method thereof, wherein the microcavity plasma transistor comprises a substrate, a bottom electrode, a source electrode, a drain electrode, a microcavity cavity, an insulating layer, a dielectric plate and a top electrode, a conductive medium is microcavity plasma, the microcavity plasma is generated in a microcavity gas discharge mode, and the microcavity plasma is used as the medium for conducting current so as to realize the function of driving a switch. A preparation method of a microcavity plasma transistor comprises the steps of preparing a bottom electrode on the back of a substrate in a physical deposition mode, obtaining a microcavity on the substrate in an etching mode, preparing a source electrode, a drain electrode and a grid electrode in a physical deposition mode, and finally forming the plasma transistor device with a microcavity structure in a packaging mode. Compared with the traditional transistor device, the microcavity plasma transistor device can effectively improve the working stability and reliability of the transistor device under high temperature, high radiation and strong electromagnetic interference.
Description
Technical Field
The invention belongs to the technical field of transistor devices, and relates to a microcavity plasma transistor and a preparation method thereof.
Background
Transistor devices are used as control elements in driver circuits and have a significant position in the field of modern electronics. However, as various detectors are applied more frequently in space, the conventional solid-state transistor device may generate thermal excitation/radiation excitation current in high-temperature, high-radiation and strong-electromagnetic interference environments, which may cause a decrease in working efficiency and even a disorder of working state. Vacuum electronic devices have the characteristics of radiation resistance, high temperature resistance and high electron mobility, but the development of the devices in transistor application is restricted by the problems of power, service life and the like. Micro-electro-mechanical systems (MEMS) and nano-electromechanical systems (NEMS) can maintain high stability in harsh environments, but their operating frequencies and powers are far from meeting the requirements of current high-speed transistors.
Therefore, research and development of a novel switching device which is suitable for a high-temperature and high-radiation environment, has high driving power and is compatible with a semiconductor integration process are urgent needs of military and important civil fields, and are particularly critical in strategic industrial fields relating to national economic safety, national defense safety and the like.
Disclosure of Invention
The invention aims to provide a structural design and a preparation method of a microcavity plasma transistor device, which can solve the problems that the traditional transistor device can generate thermal excitation/radiation excitation current in high-temperature, high-radiation and strong electromagnetic interference environments to cause reduction of working efficiency and even disorder of working state.
The invention is realized by the following technical scheme:
the invention discloses a microcavity plasma transistor, which comprises: the device comprises a bottom electrode, a substrate, a dielectric plate and a top electrode serving as a grid electrode; the bottom electrode is arranged on the bottom surface of the substrate, the dielectric plate is arranged on the top surface of the substrate, and the top electrode is positioned on the top surface of the dielectric plate;
a micro-cavity is arranged in the substrate, and insulating layers are coated on the top surface of the substrate and the inner surface of the micro-cavity;
a source electrode and a drain electrode are arranged in the microcavity body, the source electrode and the drain electrode are arranged oppositely, and a discharge gas for generating microcavity plasma is filled in a sealed space formed by the microcavity body and the dielectric plate;
the source electrode is connected with an external direct current power supply VSThe driving and drain electrodes are connected with an external DC power supply VDDriving, the top electrode and the bottom electrode are connected with an external AC power supply VGIs connected when VGWhen the voltage is higher than the ignition voltage of the discharge gas, microcavity plasma is generated in the microcavity, so that the source electrode and the drain electrode are conducted.
Preferably, the discharge gas is air or a rare gas, one or more kinds of rare gases are used, and the pressure of the discharge gas is 1mTorr to 760 Torr.
Preferably, the substrate is a silicon substrate or a glass substrate;
the insulating layer is a silicon oxide layer or a silicon nitride layer, and the thickness of the insulating layer is 100 nm-5 mu m;
the dielectric plate is made of glass and has a thickness of 100-500 μm.
Preferably, the top electrode, the bottom electrode, the source electrode and the drain electrode are made of conductive materials; the conductive material is gold, silver, copper or indium tin oxide, and the thickness of each electrode is 100 nm-5 μm.
Preferably, the height of the microcavity is 10-1000 μm, the length is 10-1000 μm, and the width is 10-1000 μm.
The invention also discloses a method for preparing the microcavity plasma transistor, which comprises the following steps:
1) cleaning the substrate;
2) preparing a metal electrode on the bottom surface of the substrate in a physical deposition mode to serve as a bottom electrode;
3) manufacturing a micro-cavity on a substrate;
4) preparing an insulating layer on the surface of the substrate with the microcavity;
5) preparing a source electrode and a drain electrode on the surface of the insulating layer in the microcavity body in a physical deposition mode;
6) cutting the microcavity body, and cleaning the microcavity body after the cutting is finished;
7) placing a dielectric plate on the insulating layer above the bottom of the substrate, and preparing a top electrode on the upper surface of the dielectric plate in a physical deposition mode;
8) and sealing the substrate with the dielectric plate.
Preferably, in the step 2), the step 5) and the step 7), the physical deposition mode is magnetron sputtering or thermal evaporation.
Preferably, in step 3), the required microcavity is prepared by laser etching or ion beam etching.
Preferably, in step 4), when the insulating layer is a silicon oxide layer, the insulating layer is formed by a dry oxygen oxidation process or a wet oxygen oxidation process; when the insulating layer is a silicon nitride layer, the insulating layer is prepared by a low-pressure chemical vapor deposition method.
Preferably, in step 1), the substrate is sequentially subjected to ultrasonic cleaning treatment by using acetone, isopropanol and deionized water, and the cleaned substrate is blown dry by using compressed nitrogen;
in the step 6), isopropanol and deionized water are used for sequentially carrying out ultrasonic cleaning treatment on the microcavity body, and compressed nitrogen is used for blow-drying the cleaned microcavity body.
Compared with the prior art, the invention has the following beneficial technical effects:
the invention discloses a microcavity plasma transistor device structure, which comprises a substrate, wherein a bottom electrode is arranged below the substrate, a microcavity cavity is arranged inside the substrate, a source electrode and a drain electrode are arranged inside the microcavity cavity, a dielectric plate is arranged above the substrate, a top electrode is arranged above the dielectric plate and is used as a grid, when the voltage formed between the top electrode and the bottom electrode is greater than the ignition voltage of discharge gas in the microcavity cavity, microcavity plasma is generated between the source electrode and the drain electrode, a large number of charged particles exist inside the microcavity cavity, the charged particles generate directional movement under the action of the electric field of the drain electrode, and the drain electrode is communicated with the source electrode. The characteristics of active particles and photons are stably and continuously generated by microcavity plasma at atmospheric pressure and above atmospheric pressure, the characteristics of a semiconductor device and the microcavity plasma device are integrated, the conductive medium of a source electrode and a drain electrode is microcavity plasma, the microcavity plasma is generated in a gas discharge mode, and the microcavity plasma is used as the medium for conducting current so as to improve the reliability and stability of the transistor under the conditions of high temperature, high radiation and strong electromagnetic interference, so that the transistor device can adapt to the environments of high temperature, high radiation and strong electromagnetic interference. The reliability and stability of the transistor device in severe application environment are improved fundamentally, and the transistor device plays an important role in the aspect of drive control in the fields of aerospace and national defense.
Furthermore, air or rare gas is used as the discharge gas, and the physical property that the gas is electrified to generate plasma or the rare gas is electrified to emit light is utilized.
Further, the top electrode, the bottom electrode, the source electrode and the drain electrode are made of gold, silver, copper or indium tin oxide, and the electrodes are made of any conductive material according to actual requirements.
The invention discloses a preparation method of a microcavity plasma transistor device, which is based on a semiconductor device processing technology. Firstly cleaning a substrate, depositing a bottom electrode on the back of the substrate in a physical deposition mode, then manufacturing a microcavity structure on the substrate, manufacturing an insulating layer on the surface of the microcavity structure, preparing a source electrode and a drain electrode on the surface of the insulating layer in a physical deposition mode, dividing the microcavity structure, preparing a grid on a dielectric plate in a physical deposition mode, and finally sealing the substrate and the dielectric plate containing the grid. The physical characteristics of the microcavity plasma determine the working characteristics of the microcavity plasma transistor device, and the physical characteristics of the microcavity plasma are closely related to the structural parameters, working gas parameters, driving parameters and the like of the microcavity cavity. Therefore, the method can obtain transistor devices with different operating characteristics by adjusting relevant parameters, thereby adapting to different use requirements.
Further, the solid material is converted into a gas phase substance by a magnetron sputtering or thermal evaporation mode to be deposited on the surface of the substrate so as to prepare the electrode, so that the prepared electrode and the substrate have strong adhesive force.
Furthermore, the microcavity is prepared on the substrate by laser etching or ion beam etching, and the high-precision requirement of the semiconductor device can be met by adopting the photoetching technology.
Furthermore, the silicon oxide layer prepared by adopting a dry oxygen oxidation process or a wet oxygen oxidation process and the silicon nitride layer prepared by adopting a low-pressure chemical vapor deposition method have compact structure, smooth and bright surface and strong impurity masking capability, so that the surface of the insulating layer has good adhesion to the photoresist.
Drawings
FIG. 1 is a schematic diagram of a microcavity plasma transistor according to the present invention;
FIG. 2 is a schematic diagram of the driving principle of the microcavity plasma transistor according to the present invention;
FIG. 3 is a flow chart illustrating the fabrication of a bottom electrode;
FIG. 4 is a flow chart of the fabrication of a microcavity body;
FIG. 5 is a flow chart of the fabrication of source and drain electrodes;
FIG. 6 is a flow chart illustrating the fabrication of the top electrode;
wherein 100 is a substrate, 110 is a bottom electrode, 121 is a source electrode, 122 is a drain electrode, 123 is a microcavity, 130 is an insulating layer, 140 is a dielectric plate, and 150 is a top electrode.
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
As shown in fig. 1, a microcavity plasma transistor includes a bottom electrode 110, a substrate 100, a dielectric plate 140, and a top electrode 150 as a gate electrode, which are sequentially disposed from bottom to top; the bottom electrode 110 is arranged on the bottom surface of the substrate 100, the dielectric plate 140 is arranged on the top surface of the substrate 100, and the top electrode 150 is arranged on the top surface of the dielectric plate 140; a micro-cavity 123 is formed in the substrate 100, and a sealed space formed by the micro-cavity 123 and the dielectric plate 140 is filled with discharge gas; a source electrode 121 and a drain electrode 122 are arranged in the microcavity 123, and the source electrode 121 and the drain electrode 122 are arranged oppositely; the top surface of the substrate 100 and the inner surfaces of the microcavity 123 are covered with an insulating layer 130.
As shown in fig. 2, when the source electrode 121 and the drain electrode 122 are connected by an external dc driving source, the top electrode 150 and the bottom electrode 110 are connected by an external ac driving source, and the voltage formed between the top electrode 150 and the bottom electrode 110 is greater than the ignition voltage of the discharge gas in the microcavity 123, the discharge gas generates microcavity plasma, so that a large amount of charged particles exist in the microcavity 123, the charged particles generate directional movement under the action of the electric field of the drain electrode 122, and the drain electrode 122 is connected to the source electrode 121.
The microcavity plasma is generated by means of gas discharge, the discharge gas is one or more of rare gases, air can also be used as the discharge gas, and the gas pressure is 1mTorr to 760 Torr.
More preferably, the substrate 100 is a silicon substrate or a glass substrate; the insulating layer 130 is a silicon oxide layer or a silicon nitride layer; the top electrode 150, the bottom electrode 110, the source electrode 121 and the drain electrode 122 are made of conductive materials such as gold, silver, copper or indium tin oxide; the dielectric plate 140 is made of an insulating material such as glass.
The thickness of the insulating layer 130 is 100 nm-5 μm; the thickness of the bottom electrode 110 is 100 nm-5 μm; the thickness of the source electrode 121 and the drain electrode 122 is 100 nm-5 μm; the thickness of the top electrode 150 is 100 nm-5 μm; the height of the microcavity body 123 is 10-1000 μm, the length is 10-1000 μm, and the width is 10-1000 μm; the thickness of the dielectric plate 140 is 100-500 μm.
Example 1
Referring to fig. 1, the microcavity plasma transistor includes a substrate 100, a bottom electrode 110, a source electrode 121, a drain electrode 122, a microcavity 123, an insulating layer 130, a dielectric plate 140, and a top electrode 150, where the substrate 100 is a silicon substrate, the insulating layer 130 is a silicon oxide layer, the bottom electrode 110, the source electrode 121, and the drain electrode 122 are gold electrodes, and the top electrode 150 is made of indium tin oxide.
The method for preparing the microcavity plasma transistor specifically comprises the following steps:
1) cleaning the silicon substrate: carrying out ultrasonic cleaning treatment on the silicon substrate for 5min by using acetone, isopropanol and deionized water respectively, and blowing the cleaned silicon substrate by using compressed nitrogen;
2) depositing a bottom electrode 110 on the bottom surface of the silicon substrate by adopting a magnetron sputtering mode: as shown in fig. 3, a silicon substrate is subjected to a pre-baking pretreatment, a photoresist is uniformly coated on the bottom surface of the silicon substrate, the silicon substrate is aligned with a mask, the photoresist is exposed by UV light, i.e., ultraviolet light, and the exposed photoresist is developed and post-baked to obtain a mask pattern. Depositing a gold electrode on the bottom surface of the silicon substrate by adopting a magnetron sputtering mode to form a bottom electrode 110, and finally performing photoresist removing treatment on the silicon substrate subjected to metal electrode deposition;
3) as shown in fig. 4, the desired microcavity 123 is fabricated by ion beam etching: the silicon substrate was placed on a holder inside a vacuum reaction chamber, and a flow of argon was introduced into the reaction chamber: incident at 30-60 degrees and the current density is 1mA/cm2The voltage is 300-500V;
carrying out pre-baking pretreatment on a silicon substrate, uniformly coating photoresist on the surface of the silicon substrate, aligning the photoresist to a mask, exposing the photoresist by using UV light (ultraviolet light), developing and post-baking the exposed photoresist to obtain a mask pattern, bombarding the silicon substrate by using ion beams, removing or removing solid atoms on the surface of the silicon substrate which is not shielded by the mask, and manufacturing a required microcavity 123 on the silicon substrate;
4) carrying out dry oxygen oxidation treatment on the silicon substrate: feeding the silicon substrate into a furnace tube, introducing nitrogen and small-flow oxygen, starting to heat, wherein the heating speed is 5-30 ℃/min, introducing large-flow oxygen firstly, starting an oxidation reaction, introducing large-flow oxygen and trichloroethylene secondly, then closing a trichloroethylene channel, introducing large-flow oxygen to eliminate residual trichloroethylene, finally closing the oxygen channel, introducing nitrogen, annealing, cooling, wherein the cooling speed is 2-10 ℃/min, pulling the silicon substrate out of the furnace tube, and thus generating a silicon oxide layer on the surface of the silicon substrate, and taking the silicon oxide layer as an insulating layer 130;
5) depositing a source electrode 121 and a drain electrode 122 on the surface of the insulating layer 130 by adopting a magnetron sputtering mode: as shown in fig. 5, performing pre-baking pretreatment on the insulating layer 130 manufactured in step 4), uniformly coating photoresist on the surface of the insulating layer 130 located in the microcavity 123, aligning the photoresist to a mask, exposing the photoresist by using UV light, performing development and post-baking treatment on the exposed photoresist, depositing a gold electrode on the surface of the device by adopting a magnetron sputtering method to form a source electrode 121 and a drain electrode 122, and finally performing photoresist removal treatment on the insulating layer 130 on which the gold electrode deposition is completed;
6) cutting all microcavity devices on the substrate by using a diamond saw blade cutting machine, cleaning the substrate of each microcavity device by using isopropanol and deionized water after the cutting is finished completely, and drying the cleaned silicon substrate by using compressed nitrogen;
7) referring to fig. 6, a top electrode 150 is prepared on a dielectric plate 140 by a magnetron sputtering method, the dielectric plate 140 is subjected to pre-baking pretreatment, a photoresist is uniformly coated on the surface of the dielectric plate 140 and aligned with a mask, the photoresist is exposed by UV light, the exposed photoresist is subjected to development and post-baking treatment, indium tin oxide is deposited on the surface of the dielectric plate 140 by a magnetron sputtering method to form the top electrode 150, and finally the photoresist removing treatment is performed on the dielectric plate 140 on which the indium tin oxide electrode deposition is completed;
8) packaging: the silicon substrate is sealed to a dielectric plate 140 containing a top electrode 150. Thus preparing the AC drive controlled microcavity plasma transistor.
Referring to FIG. 2, the source electrode 121 is driven by a DC driving source VSThe drain electrode 122 is driven by a DC driving source VDDriven, the top electrode 150 and the bottom electrode 110 are driven by an AC drive source VGAnd (5) controlling. Wherein VGAnd may be a sine wave, a square wave, a pulse waveform, or the like. When V isGWhen the ignition voltage is higher than the ignition voltage of the gas, a microcavity plasma is generated in the microcavity 123, so that a large number of charged particles exist in the microcavity 123. The charged particles generate directional movement under the action of the electric field of the drain electrode 122, so that the drain electrode 12 of the transistor is conducted with the source electrode 121.
Example 2
Referring to fig. 1, the microcavity plasma transistor includes a substrate 100, a bottom electrode 110, a source electrode 121, a drain electrode 122, a microcavity 123, an insulating layer 130, a dielectric plate 140, and a top electrode 150, where the substrate 100 is a glass substrate, the insulating layer 130 is a silicon oxide layer, the bottom electrode 110 is a copper electrode, and the source electrode 121, the drain electrode 122, and the top electrode 150 are silver electrodes.
The method for preparing the microcavity plasma transistor specifically comprises the following steps:
1) cleaning the glass substrate: carrying out ultrasonic cleaning treatment on the glass substrate for 5min by using acetone, isopropanol and deionized water respectively, and simultaneously blowing the cleaned glass substrate by using compressed nitrogen;
2) depositing copper on the bottom surface of the glass substrate in a thermal evaporation mode to serve as a bottom electrode 110;
3) manufacturing a required micro-cavity 123 by laser etching;
4) performing wet oxygen oxidation treatment on the glass substrate, introducing a mixture of oxygen and water vapor, which is formed by passing dry oxygen through heated high-purity deionized water, into an oxidation furnace as an oxidation atmosphere to perform oxidation treatment, thereby preparing a silicon oxide layer as the insulating layer 130;
5) depositing a silver electrode on the surface of the insulating layer 130 by adopting a thermal evaporation mode:
6) cutting all microcavity devices on the glass substrate by using a diamond saw blade cutting machine, cleaning the substrate of each microcavity device by using isopropanol and deionized water after the cutting is finished completely, and drying the cleaned glass substrate by using compressed nitrogen;
7) preparing a silver electrode, i.e., a top electrode 150, on the dielectric plate 140 by means of thermal evaporation;
8) packaging: the glass substrate is sealed to a dielectric plate 140 containing a top electrode 150. Thereby producing an AC-controlled microcavity plasma transistor.
Example 3
Referring to fig. 1, the microcavity plasma transistor includes a substrate 100, a bottom electrode 110, a source electrode 121, a drain electrode 122, a microcavity 123, an insulating layer 130, a dielectric plate 140, and a top electrode 150, where the substrate 100 is a silicon substrate, the insulating layer 130 is a silicon nitride layer, the bottom electrode 110 is a gold electrode, and the source electrode 121, the drain electrode 122, and the top electrode 150 are copper electrodes.
The method for preparing the microcavity plasma transistor specifically comprises the following steps:
1) cleaning the silicon substrate: carrying out ultrasonic cleaning treatment on the silicon substrate for 10min by using acetone, isopropanol and deionized water respectively, and blowing the cleaned silicon substrate by using compressed nitrogen;
2) and depositing gold on the back of the silicon substrate by adopting a thermal evaporation mode to be used as a bottom electrode 110:
3) manufacturing a required microcavity 123 by laser etching:
4) carrying out low-pressure chemical vapor deposition treatment on the silicon substrate to prepare a silicon nitride layer:
5) and depositing copper electrodes on the surface of the silicon nitride layer by adopting a thermal evaporation mode to serve as a source electrode 121 and a drain electrode 122:
6) cutting all microcavity devices on the substrate by using a diamond saw blade cutting machine, cleaning the substrate of each microcavity device by using isopropanol and deionized water after the cutting is finished completely, and drying the cleaned silicon substrate slice by using compressed nitrogen;
7) depositing a copper electrode by means of thermal evaporation on the dielectric plate 140 as a top electrode 150:
8) packaging: the silicon substrate is sealed to a dielectric plate 140 containing a top electrode 150. Thereby producing an AC-controlled microcavity plasma transistor.
The photoresist used above is AZ 5214.
According to the similar mathematics and physical characteristics of the semiconductor device and the non-equilibrium plasma, the characteristics of high switching resistance ratio, high current density, small influence of high temperature, high radiation and electromagnetic interference and the like of the non-equilibrium microcavity plasma are combined, so that the plasma transistor device combining the semiconductor and the plasma is researched and designed, the microcavity plasma coupling control transistor device is designed and prepared, and the switching characteristic and the driving characteristic of the plasma coupling control transistor device are researched and researched. The microcavity plasma device is characterized by a small discharge space (typically several tens to several hundreds of micrometers), stable and continuous generation of active particles and photons at and above atmospheric pressure, and a high on-off resistance ratio (10) of microcavity plasma10Ω/10-1Omega), high current density, etc., so that it has the characteristics of preparing switching devices and power devices such as field effect transistors and transistors, etc. In addition, the microcavity plasma is subjected to high temperature (up to 1000 ℃), high radiation, small electromagnetic interference and the like, so that the microcavity plasma has the potential application of stable work in severe environments. Therefore, the development of a microcavity plasma transistor device effectively combines plasma and semiconductor technologies, and has important significance for improving the comprehensive performance of the transistor device, particularly improving the reliability and stability of the transistor device in a severe environment. The research of the invention can be applied to plasma propulsion, high-power electromagnetic wave amplification and severe application environment, can fundamentally improve the application reliability and stability of transistor devices in severe application environment, and can play an important role in the drive control in the fields of aerospace and national defense.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention, and do not limit the present invention. Although the present invention has been described in detail with reference to the above examples, those skilled in the art should understand that various changes and substitutions can be made without departing from the scope of the present invention.
Claims (10)
1. A microcavity plasma transistor, comprising: a bottom electrode (110), a substrate (100), a dielectric plate (140), and a top electrode (150) as a gate electrode; the bottom electrode (110) is arranged on the bottom surface of the substrate (100), the dielectric plate (140) is arranged on the top surface of the substrate (100), and the top electrode (150) is arranged on the top surface of the dielectric plate (140);
a micro-cavity (123) is arranged in the substrate (100), and insulating layers (130) are coated on the top surface of the substrate (100) and the inner surface of the micro-cavity (123);
a source electrode (121) and a drain electrode (122) are arranged in the microcavity body (123), the source electrode (121) and the drain electrode (122) are arranged oppositely, and a discharge gas for generating microcavity plasma is filled in a sealed space formed by the microcavity body (123) and the dielectric plate (140);
the source electrode (121) is externally connected with a direct current power supply VSThe drain electrode (122) is driven by an external DC power supply VDDriving, the top electrode (150) and the bottom electrode (110) are connected with an external alternating current power supply VGIs connected when VGWhen the ignition voltage of the discharge gas is higher than the ignition voltage of the discharge gas, microcavity plasma is generated in the microcavity (123) to conduct the source electrode (121) and the drain electrode (122),
wherein the pressure of the discharge gas is 1 mTorr-760 Torr;
the insulating layer (130) is a silicon oxide layer or a silicon nitride layer, and the thickness is 100 nm-5 mu m.
2. A microcavity plasma transistor according to claim 1, wherein the discharge gas is air or a rare gas, and one or more of the rare gases are used.
3. A microcavity plasma transistor according to claim 1, characterized in that the substrate (100) is a silicon substrate or a glass substrate;
the dielectric plate (140) is made of glass and has a thickness of 100-500 μm.
4. A microcavity plasma transistor according to claim 1, wherein the top electrode (150), the bottom electrode (110), the source electrode (121) and the drain electrode (122) are made of conductive material; the conductive material is gold, silver, copper or indium tin oxide, and the thickness of each electrode is 100 nm-5 μm.
5. The microcavity plasma transistor according to claim 1, wherein the microcavity body (123) has a height of 10 to 1000 μm, a length of 10 to 1000 μm, and a width of 10 to 1000 μm.
6. The method for preparing the microcavity plasma transistor according to any one of claims 1 to 5, comprising the following steps:
1) cleaning the substrate (100);
2) preparing a metal electrode as a bottom electrode (110) on the bottom surface of the substrate (100) by means of physical deposition;
3) fabricating a microcavity cavity (123) on a substrate (100);
4) preparing an insulating layer (130) on the surface of the substrate (100) provided with the microcavity (123);
5) preparing a source electrode (121) and a drain electrode (122) on the surface of the insulating layer (130) in the microcavity body (123) by means of physical deposition;
6) cutting the micro-cavity (123), and cleaning the micro-cavity (123) after the cutting is finished;
7) placing a dielectric plate (140) on an insulating layer (130) above a substrate (100), and preparing a top electrode (150) on the upper surface of the dielectric plate (140) in a physical deposition mode;
8) the substrate (100) is sealed with the dielectric plate (140).
7. The method for producing a microcavity plasma transistor according to claim 6, wherein in step 2), step 5) and step 7), the physical deposition is by magnetron sputtering or thermal evaporation.
8. The method for preparing a microcavity plasma transistor according to claim 6, wherein in step 3), the required microcavity (123) is prepared by laser etching or ion beam etching.
9. The method for preparing a microcavity plasma transistor according to claim 6, wherein in step 4), when the insulating layer (130) is a silicon oxide layer, it is formed by a dry oxygen oxidation process or a wet oxygen oxidation process; when the insulating layer (130) is a silicon nitride layer, the insulating layer is prepared by a low pressure chemical vapor deposition method.
10. The method for preparing the microcavity plasma transistor according to claim 6, wherein in step 1), the substrate (100) is sequentially subjected to ultrasonic cleaning treatment using acetone, isopropyl alcohol, and deionized water, and the cleaned substrate (100) is blown dry using compressed nitrogen gas;
in the step 6), isopropanol and deionized water are used for sequentially carrying out ultrasonic cleaning treatment on the microcavity body (123), and compressed nitrogen is used for blow-drying the cleaned microcavity body (123).
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