JP2002274993A - Device and process for liquid phase epitaxial growth - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a high-quality epitaxial growth substrate by effectively discharging raw material waste liquid after epitaxial growth. SOLUTION: Multiple apertures 114 are formed at raw material waste liquid outlet for substantially simultaneously and uniformly discharging raw material waste liquids contained in a growth vessel. A shutter 108 has apertures 106 with sizes and positions substantially identical to those of the apertures 114 of the raw material waste liquid outlet. By sliding the shutter 108 for a predetermined distance, the raw material waste liquid is substantially simultaneously and uniformly discharged from the raw material drainage apertures 114.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid phase epitaxial growth apparatus and a method for growing the same, and more particularly, to a liquid phase epitaxial growth apparatus.
The present invention relates to a liquid phase epitaxial growth apparatus in which a raw material waste liquid outlet for discharging a raw liquid waste liquid is formed at the bottom of a growth vessel, and a growth method thereof.

[0002]

2. Description of the Related Art In a conventional liquid phase epitaxial growth vessel 200, as shown in FIG. 6A, a raw material waste liquid discharge port 204 having a substantially rectangular opening is formed at the bottom of a growth chamber 202. . Also, the raw material waste liquid outlet 204
A shutter 208 having a substantially rectangular opening 206 substantially the same as the raw material waste liquid discharge port 204 is provided below the shutter. The shutter 208 is set at a position where the raw material waste liquid outlet 204 is closed during epitaxial growth, and the growth chamber 202 in which the GaAs substrate 210 is stored is sealed.

After completion of the epitaxial growth, the shutter 208 is gradually slid from one end so that the shutter
The opening 206 of the growth chamber 202 is made to gradually coincide with the opening 206 of the growth chamber 202. As a result, the raw material waste liquid outlet 204
Is gradually opened from one end thereof, and the raw material waste liquid is discharged to a waste liquid tank (not shown) installed below the one end. Thereafter, the shutter 208 is closed for the next epitaxial growth, and the inside of the growth chamber 202 is sealed.

Next, the next epitaxial growth raw material is introduced from the raw material introduction port 212, and a predetermined epitaxial layer is sequentially grown to obtain an AlGaAs double heterostructure light emitting diode substrate.

[0005]

However, in the above-mentioned conventional method for discharging the raw material waste liquid, the raw material waste liquid is gradually discharged from one end of the growth vessel, so that there is a difference in the residence time of the raw material waste liquid in the growth chamber. Further, there is a problem that the raw material waste liquid is not effectively discharged and remains in the growth chamber, and is mixed into the next raw material solution for epi growth. For this reason, for example, PNPN is partially added to a part of the PN structure diode formed on the semiconductor substrate.
LED such as thyristor of structure is formed, or component amount of active layer becomes uneven and causes failure as LED
There is a problem that the device function is significantly impaired and the yield of LED devices is reduced.

Accordingly, it is an object of the present invention to provide a new and improved liquid phase epitaxial growth apparatus and a liquid phase epitaxial growth apparatus capable of effectively discharging a raw material waste liquid after epi growth from each wafer and obtaining a high quality epitaxial growth substrate. It is to provide a phase epitaxial growth method.

[0007]

According to a first aspect of the present invention, there is provided a growth container having a bottom formed with a raw material waste liquid outlet for discharging a raw material waste liquid after growth, A liquid phase epitaxy apparatus comprising: a shutter capable of closing and opening the raw material waste liquid discharge port,
The raw material waste liquid outlet is formed by arranging a plurality of openings for discharging the raw material waste liquid substantially simultaneously and substantially uniformly in the growth vessel, and the shutter has an opening substantially the same as the raw material waste liquid port. The shutter is closed at the substantially same position, and from the first position where the shutter closes the opening of the raw material waste liquid port, the opening of the raw material waste liquid discharge port and the opening of the shutter substantially coincide with each other. The liquid phase epitaxial growth apparatus is characterized in that the raw material waste liquid in the growth vessel is discharged almost simultaneously and substantially uniformly by moving to the position of (1).

According to the invention described in this section, the raw material waste liquid after the growth is discharged quickly and substantially uniformly over the entire growth chamber, so that the raw material waste liquid does not remain in the growth chamber and is mixed with the next raw material for epitaxial growth. Never do. As a result, a high-quality epitaxial growth layer is formed with good reproducibility, and PNP
The LED element defect rate due to the formation of the N-type thyristor decreases. As a result, the production yield of the LED element is improved.

According to a second aspect of the present invention, the opening of the raw material waste liquid discharge port and the opening of the shutter may be configured as a plurality of slit-shaped openings.

According to a third aspect of the present invention, the opening of the raw material waste liquid discharge port and the opening of the shutter may be configured as a plurality of substantially circular openings.

[0011] In order to solve the above-mentioned problems, a fourth aspect is provided.
In the liquid crystal epitaxial growth method, the raw material waste liquid after the growth is discharged from the raw material waste liquid discharge port at the bottom of the growth vessel, and a new raw material solution is supplied to sequentially form an epitaxial growth layer. The waste liquid outlet is
A plurality of openings for discharging the raw material waste liquid at substantially the same time in the growth vessel are arranged and formed, and the shutter has an opening substantially at the same position as the raw material waste liquid port. Moving the shutter from a first position at which the opening of the raw material waste liquid port is closed to a second position at which the opening of the raw material waste liquid discharge port and the opening of the shutter substantially coincide with each other; A liquid phase epitaxial growth method is provided, comprising a step of substantially uniformly discharging the raw material waste liquid in the growth vessel.

According to the invention described in this section, the raw material waste liquid after the growth is discharged quickly and substantially uniformly over the entire growth chamber, so that the raw material waste liquid does not remain in the growth chamber and is mixed with the next epitaxial growth raw material. Never do. As a result, a high-quality epitaxial growth layer is formed with good reproducibility, and PNP
The LED element defect rate due to the formation of the N-type thyristor decreases. As a result, the production yield of the LED element is improved.

According to a fifth aspect of the present invention, the opening of the raw material waste liquid outlet and the opening of the shutter may be configured as a plurality of slit-shaped openings.

Further, the opening of the raw material waste liquid discharge port and the opening of the shutter may be configured as a plurality of substantially circular openings.

[0015]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.
In the following description and the accompanying drawings, components having the same functions and configurations are denoted by the same reference numerals, and redundant description will be omitted.

(First Embodiment) FIGS. 1 to 5
The liquid phase epitaxial growth apparatus according to the first embodiment will be described with reference to FIG. In addition, FIG.
FIG. 3 is a block diagram showing a configuration of a liquid phase epitaxial growth apparatus according to an embodiment. FIG. 2 is a block diagram showing a configuration of the liquid phase epitaxial growth container according to the first embodiment. In FIGS. 2 and 5 below, the opening of the material waste liquid port and the opening of the slit are described as four openings for simplification of the drawing, but will be described with reference to FIGS. 3 and 4. It is not inconsistent with the six openings described above and is not limited to such an example.

First, as shown in FIGS. 1 and 2, a liquid-phase epitaxial apparatus according to the present embodiment comprises a growth vessel 10 for growing an epitaxial layer on a semiconductor substrate.
0, a raw material container 140 loaded on the growth container to introduce a raw material solution for epitaxial growth into the growth container, a raw material waste liquid tank 160 for storing used raw material waste liquid discharged from the raw material container, and the like. The growth container 100, the raw material container 140, and the raw material waste liquid tank 160 are formed of, for example, a carbon material so that the liquid raw material does not adhere and react.

The growth container 100, the raw material container 140 and the raw material waste liquid container 160 are made of a furnace core tube 170 made of, for example, quartz.
It is installed at a predetermined position inside. A heater 180 is provided around the furnace core tube 170, and the temperature of the growth vessel 100 and the raw material vessel 140 is adjusted to a predetermined temperature via a temperature control device (not shown).

The growth vessel 100 includes a growth chamber 102 for performing epitaxial growth on a plurality of semiconductor substrates 110 stored therein, a raw material inlet 112 having an opening provided above the growth chamber 102, and a growth chamber 102. Raw material waste liquid port 114 having a slit-shaped opening provided at the bottom
And the raw material waste liquid port 1 installed below the raw material waste liquid port 114
14 that can be opened and closed. The detailed structure of the shutter will be described later.

In the growth chamber 102, a plurality of semiconductor substrates 11
0 is stored via a substrate holding plate (not shown). In addition, a liquid source is introduced into the growth chamber 102 from the source container 140 placed on the upper part of the growth container 100 via the source inlet 112.

On the other hand, the raw material container 140 has three independent raw material storage chambers 142.
A, 142b and 142c contain a raw material solution for forming a P-type clad layer, a P-type active layer and an N-type clad layer. This raw material solution is prepared by adding GaAs polycrystal
A predetermined ratio of Al and a predetermined composition of impurities (for example, P-type impurity Zn and N-type impurity: Te) are dissolved therein.

Each of the raw material storage chambers 142a, 142b,
A raw material supply port (not shown) is opened at the bottom of 142 c.
The raw material accommodating chamber 142 is in a closed state by being in contact with the upper surface of the container. One end of the raw material container 140 has a quartz rod 1
Reference numeral 44 is connected, and the raw material container 140 is slid via the quartz rod 144 to guide the raw material supply port of the raw material storage chamber 142 to the raw material introduction port 112 of the growth container 100, so that the liquid raw material is removed from the raw material storage chamber 142. It is introduced into the growth chamber 102. In addition, each raw material storage chamber 142a, 142b, 1
A material supply port (not shown) is opened in the upper part of 42c, so that the material can be supplied to each of the material chamber housing chambers 142a, 142b, 142c.

Next, the structure of the material waste liquid discharge port and the shutter of the material container according to this embodiment will be described with reference to FIGS.
It will be described based on.

As shown in FIG. 3, for example, a 10 mm × 60 mm opening is formed in a substantially rectangular opening 104 at the bottom of the growth chamber 102.
A partition plate 116 is provided in which, for example, six slit-shaped openings 114 are formed at, for example, six locations at intervals of 20 mm. As described above, the raw material waste liquid outlet 114 including the plurality of slit-shaped openings is formed at the bottom of the growth vessel. The opening may be 10 mm square or more. On the other hand, if the distance between the openings is too wide, the slide amount becomes large, so that the productivity is deteriorated.

As shown in FIG. 4, a shutter 108 disposed below the raw material waste liquid discharge port 114 has a
62 mm slit-shaped openings 106 are formed at, for example, six places at intervals of 18 mm. At this time, the opening of the raw material waste liquid discharge port is preferably formed slightly narrower than the opening of the shutter in order to prevent leakage of the raw material solution.
The shutter 108 can be slid at a predetermined stroke along a guide of the partition plate 116 fixed to the bottom of the growth chamber 102 via a quartz rod 118 connected to one end of the shutter 108. Note that this stroke is set at a moving distance (for example, 15 mm) such that the slit-shaped opening 114 can be freely opened and closed. In this manner, by simply moving the shutter 108 with a short stroke, the raw material waste liquid discharge port capable of discharging the raw material waste liquid substantially simultaneously and substantially uniformly can be opened and closed.

At this time, for example, during epitaxial growth, the shutter 108 is set at a position where the slit-shaped opening 114 of the raw material waste liquid outlet is closed, and the raw material solution is accommodated in the sealed growth chamber 102 for growth. Also, for example, after the end of the epitaxial growth, the shutter 1
08 is moved to a position where the slit-shaped opening 114 of the raw material waste liquid outlet coincides with the slit-shaped opening 114 of the raw material waste liquid outlet, the raw material waste liquid outlet 114 is opened, and the raw material waste liquid in the growth chamber 102 is substantially uniform. Is discharged to the raw material waste liquid tank 160.

In this embodiment, since the plurality of openings of the raw material waste liquid discharge port are simultaneously opened just by sliding the shutter with a short stroke, the raw material waste liquid in the growth vessel can be uniformly and rapidly discharged. Can be. As described above, the raw material waste liquid does not remain in the growth vessel and does not mix with the raw material solution for the next epitaxial growth.
The thyristor having the PNPN structure is prevented from being formed in the LED element having the structure.

Next, using the epitaxial growth apparatus according to the present embodiment, AlGaAs is formed by a slow cooling method.
A process for manufacturing a double heterostructure light emitting diode will be described with reference to FIGS. In the following example, a GaAs substrate is used as a substrate for liquid phase epitaxial growth, and Ga, GaAs, Al, and impurities (Zn, Te, etc.) are used as a raw material solution. Also, the description will be made on the assumption that the plurality of GaAs substrates are already stored in the growth chamber via the substrate holding plate.

First, as shown in FIGS. 1 and 5 (a),
A raw material for forming a P-type cladding layer is supplied to the raw material storage chamber 142a of the raw material container 140, a raw material for forming the P-type active layer is supplied to the raw material storage chamber 142b, and a raw material for forming the N-type cladding layer is supplied to the raw material storage chamber 142c. I do. At this time, the raw materials to be added include Ga as a solvent, GaAs polycrystal, a predetermined ratio of Al, and a predetermined composition of impurities (for example, a P-type impurity Zn and an N-type impurity: Te).

Next, the inside of the furnace core tube 170 is heated to, for example, 920 ° C.
For 1 hour to dissolve the raw material in the raw material container 140. Next, the raw material container 142 is slid by the quartz rod 144 so that the raw material supply port of the raw material storage chamber 142a for storing the raw material for forming the P-type clad layer coincides with the raw material introduction port of the growth chamber 102, and a plurality of GaAs substrates are formed. A raw material solution for forming a P-type clad layer is introduced into the growth chamber 102 in which is stored.

Then, for example, 0.1
The growth vessel temperature is gradually lowered at a rate of about 2.0 ° C./min to a predetermined thickness (for example, 80 to 1) on the GaAs substrate.
A P-type cladding layer (P-type AlGaAs layer) having a thickness of 50 μm and an average value of 130 μm is epitaxially grown.

After the epitaxial growth of the P-type cladding layer is completed, the shutter 108 is slid a predetermined distance by operating the quartz rod 118 as shown in FIG. The slit-shaped opening 114 of the raw material waste liquid outlet is aligned.

In the present embodiment, only by sliding the shutter a short distance about the width of the slit-shaped opening,
The slit-shaped openings of the raw material waste liquid discharge ports are simultaneously opened, and the raw material waste liquid in the growth vessel is uniformly and rapidly discharged.

Next, after completely discharging the raw material waste liquid for forming the P-type cladding layer, the shutter 10 is
8 is slid to the original position, the slit-shaped opening 114 of the raw material waste liquid outlet is closed, and the growth chamber 102 is sealed.

Thereafter, similarly to the above, the raw material container 140 is moved via the quartz rod 144, and the raw material introduction port of the raw material storage chamber 142b for storing the raw material solution for forming the P-type active layer is aligned with the growth chamber. A raw material solution for forming a P-type active layer is introduced into the growth chamber 102, and a predetermined thickness (for example, about
m) The P-type active layer (P-type AlGaAs layer) is epitaxially grown. Further, the raw material waste liquid after growth is discharged from the slit-shaped opening 114 of the raw material waste liquid discharge port according to the present embodiment.

Further, in the same manner as described above, the raw material container 140 is moved via the quartz rod 144, and the raw material introduction port of the raw material storage chamber 142c for storing the raw material solution for forming the N-type clad layer is connected to the growth container 100. A raw material solution for forming an N-type clad layer is introduced into the growth chamber 102 so as to coincide with the raw material supply port 112 and has a predetermined thickness (for example, 40 to 100 μm, average value 70 μm).
m) The N-type cladding layer (N-type AlGaAs layer) is epitaxially grown. Further, the raw material waste liquid after growth is supplied to the slit-shaped opening 114 of the raw material waste liquid discharge port according to the present embodiment.
Discharged from

As described above, on the GaAs substrate, there is formed a P-type cladding layer, a P-type active layer and an N-type cladding layer.
An epitaxial growth substrate (light emitting diode wafer) having a GaAs double hetero structure is formed.

Thereafter, the GaAs substrate on which the epitaxial growth substrate has been formed is immersed in a solution composed of, for example, NH ₃ aq (ammonia water) + H ₂ O ₂ (hydrogen peroxide), and only the GaAs substrate is dissolved and removed, thereby obtaining epitaxial growth. An epitaxial substrate composed of only layers is obtained.

Next, this epitaxial substrate is adhered on a grinding plate with the P-type clad layer serving as the adhered surface, and the surface of the N-type clad layer is ground to flatten the thickness of the epitaxial substrate, for example, to 185 μm. Make uniform thickness. After that, electrodes are formed.

Thereafter, the epitaxial substrate (AlGaAs)
s double heterostructure light emitting diode substrate) is cut into chips of, for example, 0.3 to 0.5 mm square,
An s double heterostructure light emitting diode chip is obtained.

Finally, an LED device is manufactured through processes such as die bonding, wire bonding, and resin molding.

In this embodiment, since the raw material waste liquid after the growth is discharged quickly and substantially uniformly over the entire growth chamber, the raw material waste liquid does not remain in the growth chamber and is mixed with the next epitaxial growth raw material. Nothing. As a result, a high quality epitaxially grown layer is formed with good reproducibility,
The LED element defect rate resulting from the formation of the thyristor having the PN structure is reduced. As a result, the production yield of the LED element is improved.

[0043]

EXAMPLES Liquid phase epitaxial growth was performed based on the above embodiment, and will be specifically described based on a comparative example.

(Example) First, 40 GaAs substrates were set in a growth chamber of the liquid phase epitaxy apparatus according to the above embodiment using a substrate support plate (holder). Next, Ga: about 2,000 g, GaAs polycrystal: 3 to 1 were placed in each raw material storage chamber of the raw material container installed on the upper part of the growth container.
0%, Al: 0.3% to 1%, impurity (dopant):
Zn and Te were adjusted and introduced for each epitaxial growth material.

Thereafter, hydrogen was introduced into the quartz tube sealed with the flange to make a hydrogen atmosphere, and the raw material container, the growth container, and the raw material waste liquid tank were heated to a temperature of 920 ° C. with a heater to dissolve the raw material. . Further, a raw material for a P-type clad layer was introduced into the growth chamber in which the GaAs substrate was stored.
Next, the furnace temperature was gradually lowered to a temperature of 800 ° C., and a P-type AlGaAs cladding layer was epitaxially grown on the GaAs substrate.

After the epitaxial growth of the P-type cladding layer is completed, the raw material waste liquid for the P-type cladding layer is discharged through a shutter having slit-shaped openings through a quartz rod for 15 minutes.
It was slid mm mm and discharged to a raw material waste liquid tank arranged at the lower part of the growth vessel.

Thereafter, similarly, a P-type active layer and an N-type clad layer were epitaxially grown. Further, the temperature in the furnace was lowered, the GaAs substrate on which the epitaxial layer was formed was taken out, and subjected to a predetermined treatment to obtain a total thickness of 200 μm.
LE with P-type cladding layer, active layer and N-type cladding layer structure
An epitaxial substrate for D was obtained.

The above-mentioned epitaxial substrate for a light emitting diode was half-cut into a square of 310 μm to produce an LED chip, and a current, an emission intensity and an electric characteristic were measured for each LED chip. As a result, the failure rate due to the formation of the thyristor was 0.5% or less. In addition, characteristics equivalent to the conventional ones in both wavelength and emission intensity were confirmed.

(Comparative Example) An epitaxial growth was performed on the above-described embodiment using a conventional growth vessel having a substantially rectangular shutter structure. The other conditions are the same as those in the above embodiment.

In the comparative example, when the raw material waste liquid after the epitaxial growth was discharged, the raw material waste liquid was discharged from the end of the growth vessel, so that the residual raw material waste liquid was partially confirmed. The epi-growth substrate formed in the comparative example was chipped,
The wavelength, emission intensity, and electrical characteristics were measured, and the failure rate due to the formation of the thyristor was 5% or more.

As described above, in the above embodiment, the thyristor NG caused by the residual melt was significantly reduced, and the overall yield was increased by about 8%. Since the used raw material is quickly and completely discharged, a high-quality epitaxial layer can be grown with good reproducibility. It was also confirmed that the material was completely discharged after the completion of the epitaxial growth. This has made it possible to form a high quality epitaxially grown layer with good reproducibility.

Although the preferred embodiment according to the present invention has been described above, the present invention is not limited to this configuration.
Those skilled in the art can envisage various modified examples and modified examples within the scope of the technical idea described in the claims, and those modified examples and modified examples are also included in the technical scope of the present invention. It is understood to be included in.

For example, in the above-described embodiment, an example has been described in which a slit-shaped opening is formed as the raw material waste liquid discharge port. However, if the raw material waste liquid can be discharged almost simultaneously and substantially uniformly, for example, a substantially circular opening, a substantially circular opening, The present invention can be applied to an opening having any shape such as an elliptical opening.

For example, in the above embodiment, the method of manufacturing the light emitting diode and the light emitting diode have been described with reference to various material examples and design numerical examples, but the present invention is not limited to such a configuration. The present invention can also be applied to a method of manufacturing a light emitting diode of various other designs using various other materials and a light emitting diode.

Further, in the above embodiment,
Although the method for manufacturing the light emitting diode and the light emitting diode have been described as examples, the present invention is not limited to such a configuration. The present invention is also applicable to various other semiconductor devices, for example, various semiconductor optical devices.

[0056]

The raw material waste liquid after the growth is discharged quickly and substantially uniformly throughout the growth chamber, so that the raw material waste liquid does not remain in the growth chamber and does not mix with the next epitaxial growth raw material. As a result, a high-quality epitaxial growth layer is formed with good reproducibility, and the defective rate of the LED element due to the formation of the thyristor having the PNPN structure is reduced. As a result, the production yield of the LED element is improved.

[Brief description of the drawings]

FIG. 1 is a block diagram showing a configuration of a liquid phase epitaxial growth apparatus according to a first embodiment.

FIG. 2 is a block diagram showing a configuration of a liquid phase epitaxial growth container according to the first embodiment.

FIG. 3 is an explanatory diagram for explaining a raw material waste liquid outlet of the growth container according to the first embodiment.

FIG. 4 is an explanatory diagram for explaining a configuration of a shutter according to the first embodiment;

FIG. 5 is a sectional process view for describing the liquid phase epitaxial growth method according to the first embodiment.

FIG. 6 is a sectional process view for explaining a conventional liquid phase epitaxial growth method.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Growth container 102 Growth chamber 104 Rectangular opening 106 Slit opening 108 Shutter 110 Semiconductor substrate 112 Raw material inlet 114 Raw material waste liquid discharge port (slit opening) 116 Partition plate 140 Raw material container 142 Raw material storage chamber 160 Raw material waste tank 170 Furnace core tube 180 Heater

Continued on the front page (72) Inventor Keinori Kurosawa 1-8-2 Marunouchi, Chiyoda-ku, Tokyo Dowa Mining Co., Ltd. (72) Inventor Kazuyoshi Kimura 1-8-2 Marunouchi, Chiyoda-ku, Tokyo Dowa Mining F term in the company (reference) 4G077 AA03 BE47 CG01 EG07 QA02 QA58

Claims (6)

[Claims] 1. A liquid phase epitaxy apparatus comprising: a growth vessel formed at a bottom thereof with a raw material waste liquid discharge port for discharging a raw material waste liquid after growth; and a shutter capable of closing and opening the raw material waste liquid discharge port. The raw material waste liquid discharge port is formed with a plurality of openings for discharging the raw material waste liquid substantially simultaneously and substantially uniformly in the growth vessel, and the shutter is provided with the raw material waste liquid port. Substantially the same opening is formed at substantially the same position, and from the first position where the shutter closes the opening of the raw material waste liquid port, the opening of the raw material waste liquid discharge port and the opening of the shutter are substantially formed. The liquid phase epitaxial growth apparatus, wherein the raw material waste liquid in the growth vessel is discharged almost simultaneously and substantially uniformly by moving to the coincident second position. 2. An opening of the raw material waste liquid outlet and an opening of the shutter are a plurality of slit-shaped openings.
The liquid phase epitaxial growth apparatus according to claim 1, wherein: 3. The liquid phase epitaxial growth apparatus according to claim 1, wherein the opening of the raw material waste liquid outlet and the opening of the shutter are a plurality of substantially circular openings. 4. A liquid-phase epitaxial growth method comprising discharging a raw material waste liquid after growth from a raw material waste liquid discharge port at the bottom of a growth vessel and supplying a new raw material solution to sequentially form an epitaxial growth layer. The discharge port is formed by arranging a plurality of openings for discharging the raw material waste liquid substantially simultaneously and substantially uniformly in the growth vessel, and the shutter has substantially the same opening as the raw material waste liquid port. The shutter is formed at the same position, and the shutter is moved from a first position for closing the opening of the material waste liquid port to a second position where the opening of the material waste liquid outlet and the opening of the shutter substantially coincide with each other. A liquid phase epitaxial growth method, comprising: moving the raw material waste liquid in the growth vessel substantially simultaneously and substantially uniformly. 5. An opening of the raw material waste liquid outlet and an opening of the shutter are a plurality of slit-shaped openings.
A liquid phase epitaxial growth method characterized by the above-mentioned. 6. The liquid phase epitaxial growth method according to claim 1, wherein the opening of the raw material waste liquid outlet and the opening of the shutter are a plurality of substantially circular openings.