JP2002270870A5 - - Google Patents

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Publication number
JP2002270870A5
JP2002270870A5 JP2001069353A JP2001069353A JP2002270870A5 JP 2002270870 A5 JP2002270870 A5 JP 2002270870A5 JP 2001069353 A JP2001069353 A JP 2001069353A JP 2001069353 A JP2001069353 A JP 2001069353A JP 2002270870 A5 JP2002270870 A5 JP 2002270870A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2001069353A
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JP2002270870A (ja
JP4731708B2 (ja
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Priority claimed from JP2001069353A external-priority patent/JP4731708B2/ja
Priority to JP2001069353A priority Critical patent/JP4731708B2/ja
Priority to US10/092,617 priority patent/US6858308B2/en
Priority to EP10162681.0A priority patent/EP2230685A3/en
Priority to EP02005536A priority patent/EP1241711A3/en
Priority to CN02121842A priority patent/CN1384552A/zh
Publication of JP2002270870A publication Critical patent/JP2002270870A/ja
Publication of JP2002270870A5 publication Critical patent/JP2002270870A5/ja
Publication of JP4731708B2 publication Critical patent/JP4731708B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001069353A 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法 Expired - Fee Related JP4731708B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001069353A JP4731708B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法
US10/092,617 US6858308B2 (en) 2001-03-12 2002-03-08 Semiconductor element, and method of forming silicon-based film
EP10162681.0A EP2230685A3 (en) 2001-03-12 2002-03-11 Semiconductor element, and method of forming silicon-based film
EP02005536A EP1241711A3 (en) 2001-03-12 2002-03-11 Semiconductor element, and method of forming silicon-based film
CN02121842A CN1384552A (zh) 2001-03-12 2002-03-12 半导体器件和硅基膜的形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001069353A JP4731708B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法

Publications (3)

Publication Number Publication Date
JP2002270870A JP2002270870A (ja) 2002-09-20
JP2002270870A5 true JP2002270870A5 (ja) 2009-12-17
JP4731708B2 JP4731708B2 (ja) 2011-07-27

Family

ID=18927396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001069353A Expired - Fee Related JP4731708B2 (ja) 2001-03-12 2001-03-12 光起電力素子、ＴＦＴ、及びｉ型半導体層の形成方法

Country Status (1)

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JP (1) JP4731708B2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009060922A1 (en) * 2007-11-05 2009-05-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device having the thin film transistor
JP5052309B2 (ja) * 2007-12-03 2012-10-17 三菱電機株式会社 光起電力装置及びその製造方法
JP2013047388A (ja) * 2012-09-18 2013-03-07 Tokyo Electron Ltd 微結晶シリコン膜形成方法、微結晶シリコン膜成膜装置および表示装置

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