JP2002270870A5 - - Google Patents
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- JP2002270870A5 JP2002270870A5 JP2001069353A JP2001069353A JP2002270870A5 JP 2002270870 A5 JP2002270870 A5 JP 2002270870A5 JP 2001069353 A JP2001069353 A JP 2001069353A JP 2001069353 A JP2001069353 A JP 2001069353A JP 2002270870 A5 JP2002270870 A5 JP 2002270870A5
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001069353A JP4731708B2 (ja) | 2001-03-12 | 2001-03-12 | 光起電力素子、TFT、及びi型半導体層の形成方法 |
US10/092,617 US6858308B2 (en) | 2001-03-12 | 2002-03-08 | Semiconductor element, and method of forming silicon-based film |
EP10162681.0A EP2230685A3 (en) | 2001-03-12 | 2002-03-11 | Semiconductor element, and method of forming silicon-based film |
EP02005536A EP1241711A3 (en) | 2001-03-12 | 2002-03-11 | Semiconductor element, and method of forming silicon-based film |
CN02121842A CN1384552A (zh) | 2001-03-12 | 2002-03-12 | 半导体器件和硅基膜的形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001069353A JP4731708B2 (ja) | 2001-03-12 | 2001-03-12 | 光起電力素子、TFT、及びi型半導体層の形成方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2002270870A JP2002270870A (ja) | 2002-09-20 |
JP2002270870A5 true JP2002270870A5 (ja) | 2009-12-17 |
JP4731708B2 JP4731708B2 (ja) | 2011-07-27 |
Family
ID=18927396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001069353A Expired - Fee Related JP4731708B2 (ja) | 2001-03-12 | 2001-03-12 | 光起電力素子、TFT、及びi型半導体層の形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4731708B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009060922A1 (en) * | 2007-11-05 | 2009-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and display device having the thin film transistor |
JP5052309B2 (ja) * | 2007-12-03 | 2012-10-17 | 三菱電機株式会社 | 光起電力装置及びその製造方法 |
JP2013047388A (ja) * | 2012-09-18 | 2013-03-07 | Tokyo Electron Ltd | 微結晶シリコン膜形成方法、微結晶シリコン膜成膜装置および表示装置 |
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2001
- 2001-03-12 JP JP2001069353A patent/JP4731708B2/ja not_active Expired - Fee Related