JP2002270122A - Plane type imaging device and method of manufacturing the plane type imaging device - Google Patents
Plane type imaging device and method of manufacturing the plane type imaging deviceInfo
- Publication number
- JP2002270122A JP2002270122A JP2001070797A JP2001070797A JP2002270122A JP 2002270122 A JP2002270122 A JP 2002270122A JP 2001070797 A JP2001070797 A JP 2001070797A JP 2001070797 A JP2001070797 A JP 2001070797A JP 2002270122 A JP2002270122 A JP 2002270122A
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- envelope
- substrate
- cathode substrate
- cathode
- sealing
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- Transforming Light Signals Into Electric Signals (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、光子の入射によ
って光電変換膜中に空間分布的に発生、蓄積された信号
電荷を、電子ビームの走査によって時系列の電気信号と
して読み出す平面型撮像装置の真空外囲器に係り、特に
電子ビームを放出する電子源が形成された基板の変形防
止を目的とする真空外囲器の構造およびその製造方法の
改良に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat-type imaging apparatus for reading out signal charges generated and accumulated in a photoelectric conversion film in a spatial distribution by the incidence of photons as time-series electric signals by scanning with an electron beam. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum envelope, and more particularly to a structure of a vacuum envelope for preventing deformation of a substrate on which an electron source that emits an electron beam is formed, and an improvement in a manufacturing method thereof.
【０００２】[0002]
【従来の技術】光電変換膜が入射光量に応じて信号電荷
を発生してこれを蓄積し、この電荷を電子ビームの走査
によって時系列的に外部回路に読み出し、入射光量の空
間的分布に対応したアナログ電気信号を発生する撮像装
置としては光導電型撮像装置が知られており、前記電子
ビームを走査する手段として冷陰極アレイを用いた平面
型撮像装置が特開平６−１７６７０４号と特開２０００
−４８７４９号に開示されている。2. Description of the Related Art A photoelectric conversion film generates and accumulates signal charges in accordance with the amount of incident light, and reads out the charges in an external circuit in a time-series manner by scanning with an electron beam. A photoconductive imaging device is known as an imaging device for generating a converted analog electric signal, and a planar imaging device using a cold cathode array as a means for scanning the electron beam is disclosed in JP-A-6-176704 and JP-A-6-176704. 2000
-48749.
【０００３】前記両公開公報記載の平面型撮像装置の構
造を示す模式的な斜視図を図７（ａ）に、模式的な断面
図を図７（ｂ）に示す。冷陰極アレイ３００は、陰極基
板３０１上に形成されたカソード電極３０２を有してい
る。カソード電極３０２の上には絶縁層３０３が設けら
れている。絶縁層３０３の上にはさらにゲート電極３０
４が設けられている。絶縁層３０３とゲート電極３０４
にはホール３０５が形成され、ホール３０５内に露出し
たカソード電極３０２上にはコーン形状のエミッタ３０
６が設けられている。カソード電極３０２とゲート電極
３０４は共に帯状に形成され、互いに直交する方向に配
設されてＸＹマトリクスを構成している。両電極をマト
リクス駆動することによって、任意の位置にあるマトリ
クスの交点のエミッタ群を選択して電子を放出させるこ
とができる。FIGS. 7A and 7B are a schematic perspective view and a schematic cross-sectional view, respectively, showing the structure of the flat-type imaging device disclosed in the above publications. The cold cathode array 300 has a cathode electrode 302 formed on a cathode substrate 301. An insulating layer 303 is provided on the cathode electrode 302. The gate electrode 30 is further formed on the insulating layer 303.
4 are provided. Insulating layer 303 and gate electrode 304
A hole 305 is formed on the cathode electrode 302 exposed in the hole 305.
6 are provided. The cathode electrode 302 and the gate electrode 304 are both formed in a strip shape, and are arranged in directions orthogonal to each other to form an XY matrix. By driving both electrodes in a matrix, an emitter group at an intersection of the matrix at an arbitrary position can be selected to emit electrons.
【０００４】冷陰極アレイ３００に対面して透光性基板
３１１が設けられている。その内面には透明電極３１２
および光電変換膜３１３が順次積層されて光電変換ター
ゲット部３１０が構成されている。外部からの光３２０
は透光性基板３１１外面側から透明電極３１２を透過し
て光電変換膜３１３に入射する構成になっている。A light-transmitting substrate 311 is provided to face the cold cathode array 300. A transparent electrode 312 is provided on its inner surface.
The photoelectric conversion film 313 is sequentially stacked to form the photoelectric conversion target unit 310. External light 320
Is configured to transmit through the transparent electrode 312 from the outer surface side of the light-transmitting substrate 311 and enter the photoelectric conversion film 313.
【０００５】冷陰極アレイ３００から放出される電子ビ
ーム３０７を光電変換膜３１３に効果的に到達させるた
めにグリッド電極３０８が冷陰極アレイ３００と光電変
換ターゲット部３１０との間に挿入され、互いに対面保
持し且つ内部を高真空状態に保つため段部を有するスペ
ーサ部材３３１で冷陰極アレイ３００と光電変換ターゲ
ット部３１０との周縁部が封着されている。基板３０１
には貫通孔３０１ａが形成され、当該貫通孔３０１ａに
相対する基板３０１の下面には下部外囲器３５０が封着
されており、下部外囲器３５０の内部は基板３０１の上
面側の空間に連通している。このように、透光性基板３
１１、陰極基板３０１、スペーサ部材３３１および下部
外囲器３５０により、内部の空間が連通した一体の外囲
器が構成されている。そして、前記下部外囲器３５０の
内部にはゲッタ３５１が配設されており、当該ゲッタ３
５１により封着後の外囲器の内部の高真空状態を保持し
ている。A grid electrode 308 is inserted between the cold cathode array 300 and the photoelectric conversion target section 310 so that the electron beam 307 emitted from the cold cathode array 300 can reach the photoelectric conversion film 313 effectively. A peripheral portion between the cold cathode array 300 and the photoelectric conversion target portion 310 is sealed by a spacer member 331 having a step portion for holding and maintaining the inside in a high vacuum state. Substrate 301
Is formed with a through hole 301a, and a lower envelope 350 is sealed to the lower surface of the substrate 301 facing the through hole 301a. Communicating. Thus, the translucent substrate 3
11, the cathode substrate 301, the spacer member 331, and the lower envelope 350 constitute an integral envelope in which the internal spaces communicate. A getter 351 is provided inside the lower envelope 350, and the getter 3
51 maintains the high vacuum state inside the envelope after sealing.
【０００６】上記の構成において、冷陰極アレイ３００
をマトリクス駆動させ、エミッタ３０６から放出された
電子ビーム３０７で前記光電変換膜３１３を走査する。
光電変換膜３１３の電子ビーム走査側、即ち走査面は２
次電子を放出しにくい材料を用いて２次電子を放出しに
くい構造で構成されている。あるいは、２次電子を放出
しにくい材料で構成されているか、又は２次電子を放出
しにくい構造で構成されている。電子ビーム３０７が到
達すると走査面の電位は降下していくが、カソード電極
３０２の電位に等しくなるとそれ以上電子ビーム３０７
が到達し得なくなるため、電子ビーム３０７の走査直後
の走査面電位はカソード電極３０２の電位に平衡する。In the above configuration, the cold cathode array 300
Are driven in a matrix, and the photoelectric conversion film 313 is scanned with the electron beam 307 emitted from the emitter 306.
The electron beam scanning side of the photoelectric conversion film 313, that is, the scanning surface is 2
It is made of a material that hardly emits secondary electrons and has a structure that hardly emits secondary electrons. Alternatively, it is made of a material that hardly emits secondary electrons, or has a structure that hardly emits secondary electrons. When the electron beam 307 arrives, the potential of the scanning surface decreases, but when the potential becomes equal to the potential of the cathode electrode 302, the electron beam 307 further increases.
Cannot be reached, so that the scanning surface potential immediately after the scanning of the electron beam 307 is balanced with the potential of the cathode electrode 302.
【０００７】透明電極３１２にはカソード電極３０２に
対して正のターゲット電圧ＶT が印加されているため、
光電変換膜３１３には透明電極３１２側が正で走査面側
が負の向きの電界が印加されることになる。Since a positive target voltage VT is applied to the transparent electrode 312 with respect to the cathode electrode 302,
An electric field in which the transparent electrode 312 side is positive and the scan surface side is negative is applied to the photoelectric conversion film 313.
【０００８】この状態で、外部からの入射光３２０が光
電変換膜３１３に入射すると、その入射量に応じた電子
正孔対が光電変換膜中に発生し、前記電界によって電子
は透明電極３１２側、正孔は走査面側に走行し、走査面
電位は到達した正孔によってカソード電極電位から上昇
していく。再び電子ビーム３０７が到達すると、走査面
電位はカソード電極電位にリセットされ、その際、出力
端子３２１から入射光量の空間電荷分布に対応する時系
列の電気信号が得られる。In this state, when the incident light 320 from the outside is incident on the photoelectric conversion film 313, electron-hole pairs are generated in the photoelectric conversion film in accordance with the amount of the incident light. The holes travel to the scanning surface side, and the scanning surface potential rises from the cathode electrode potential by the reached holes. When the electron beam 307 arrives again, the scanning surface potential is reset to the cathode electrode potential, and at this time, a time-series electric signal corresponding to the space charge distribution of the incident light amount is obtained from the output terminal 321.
【０００９】また平板状の真空外囲器を有する装置とし
て、電界放射型陰極などを電子源とした表示装置（ＦＥ
Ｄ：Field Emission Display）が知られており、その模
式的断面の概要例を図８（ａ）に示し、その部分的な拡
大例を図８（ｂ）に示す。図８（ａ）に示す表示装置は
フルカラーの表示装置で、赤（Ｒ）・緑（Ｇ）・青
（Ｂ）の蛍光体を塗布された帯状の透明電極２１２ａが
透光性基板２１１の内面に形成されて陽極部２１０を構
成している。Further, as a device having a flat vacuum envelope, a display device (FE) using a field emission type cathode or the like as an electron source.
D: Field Emission Display) is known, and a schematic example of a schematic cross section thereof is shown in FIG. 8A, and a partial enlarged example thereof is shown in FIG. 8B. The display device shown in FIG. 8A is a full-color display device, in which a strip-shaped transparent electrode 212 a coated with red (R), green (G), and blue (B) phosphors is formed on the inner surface of the light-transmitting substrate 211. To form the anode section 210.
【００１０】陽極部２１０に対面して陰極基板２０１が
設けられている。陰極基板２０１の内面には、前記平面
型撮像装置と同様にＸＹマトリクス構造のカソード電極
２０２とゲート電極２０４、エミッタ２０６及び絶縁層
２０３からなる電子放出部２０２ａが形成されて冷陰極
アレイ２００が構成されている。[0010] A cathode substrate 201 is provided facing the anode section 210. On the inner surface of the cathode substrate 201, a cathode electrode 202 having an XY matrix structure and an electron emission portion 202a composed of a gate electrode 204, an emitter 206 and an insulating layer 203 are formed similarly to the above-described flat-type imaging device, thereby forming a cold cathode array 200. Have been.
【００１１】陽極部２１０と冷陰極アレイ２００は画素
を区切る隙間部に設けられた支柱２４１により所定の間
隔（例えば約０．２ｍｍ）で保持され、透光性基板２１
１と陰極基板２０１との周縁部はシール材２３１により
封着されて内部が高真空状態に保持された外囲器が構成
されている。The anode section 210 and the cold cathode array 200 are held at a predetermined interval (for example, about 0.2 mm) by a support 241 provided in a gap section separating pixels.
A peripheral portion between the first substrate 1 and the cathode substrate 201 is sealed with a sealant 231 to form an envelope whose inside is maintained in a high vacuum state.
【００１２】上記の構成において、冷陰極アレイ２００
を表示画像データに従いマトリクス駆動し、エミッタ２
０６から放出された電子ビーム２０７で透明電極２１２
上に塗布された蛍光体を励起して発光させることにより
表示画像が得られる。In the above configuration, the cold cathode array 200
Are driven in a matrix according to the display image data, and the emitter 2
Electrode 212 with the electron beam 207 emitted from the
A display image can be obtained by exciting the phosphor applied on the substrate to emit light.
【００１３】[0013]
【発明が解決しようとする課題】上述した平面型撮像装
置の従来技術では、内部を高真空状態に保持しながら陰
極基板の変形を防止するためには、大気圧力に抗する基
板の板厚が必要となり、基板材料にガラスを用いると外
囲器重量が重くなる問題点があった。In the prior art of the above-mentioned flat type imaging device, in order to prevent the deformation of the cathode substrate while keeping the inside in a high vacuum state, the thickness of the substrate against the atmospheric pressure must be reduced. However, when glass is used as the substrate material, the weight of the envelope increases.
【００１４】陰極基板に例えば１．５ｍｍ程度の薄板ガ
ラスを用いた場合、陰極基板の中央部が大気圧力により
光電変換ターゲット部側に押されて変形するため、エミ
ッタから放出される電子ビームが光電変換膜上の所定の
位置からずれて到達することになる。このため、出力画
像の歪みや残像などの特性が劣化する問題点があった。When a thin glass plate having a thickness of, for example, about 1.5 mm is used for the cathode substrate, the central portion of the cathode substrate is pushed toward the photoelectric conversion target by the atmospheric pressure and is deformed. It will arrive at a position shifted from a predetermined position on the conversion film. For this reason, there has been a problem that characteristics such as distortion and an afterimage of an output image are deteriorated.
【００１５】また上述した表示装置の従来技術では、画
素を区切る隙間部に支柱を設けることで陰極基板の変形
を防止しているが、従来の撮像装置の場合にこの支柱に
よる補強構造を採用すると、光電変換膜が画素に分割さ
れていないため支柱により光電変換膜が潰されて剥がれ
たり、高電圧が印加されている透明電極に支柱が接する
ことで冷陰極アレイのゲート電極やカソード電極に電流
リークが発生したりするなどの問題点があった。さらに
支柱が存在する箇所の光電変換膜に発生・蓄積された電
荷が読み出せないため、感度むらや固定雑音なども発生
する問題点があった。In the prior art of the display device described above, the support of the cathode substrate is prevented by providing a support in a gap section separating pixels. However, in the case of a conventional image pickup apparatus, a reinforcing structure using the support is adopted. Since the photoelectric conversion film is not divided into pixels, the photoelectric conversion film is crushed and peeled by the support, or the support comes into contact with the transparent electrode to which a high voltage is applied, so that the current flows to the gate electrode and the cathode electrode of the cold cathode array. There were problems such as leaks. Furthermore, since the charge generated and accumulated in the photoelectric conversion film at the position where the support is present cannot be read, there is a problem that uneven sensitivity and fixed noise also occur.
【００１６】ところで撮像管に用いられる光電変換膜と
してはＰｂＯ，Ｓｂ2 Ｓ3 ，Ｓｅ，Ｓｉ，Ｃｄ，Ｚｎ，
Ａｓ，Ｔｅなどからなる半導体材料が用いられ、なかで
も非晶質Ｓｅを主体とする光電変換膜に高電界を印加し
た場合膜内で信号電荷がアパランシェ増倍され飛躍的に
感度を高めることができる。しかし非晶質Ｓｅを主体と
する光電変換膜は熱に弱く、５０℃以上の高温状態に置
かれた場合結晶化により出力映像に多数の白点が現れる
などその特性を著しく損なう。このため撮像管の電子源
を有するガラス管と光電変換ターゲット部を有する透光
性基板とを封着する際、ＦＥＤなどの表示装置で一般的
に行われているシールガラスなどのシール材を塗布後高
温（約５００℃）で焼成する工程は行えない。通常撮像
管の製作にあたっては、断面を円弧上に加工したインジ
ウムなどの軟質金属を用い加圧により封着する。撮像管
の場合ガラス管が長いため透光性基板・軟質金属とガラ
ス管との芯合わせが容易であるが、平面型撮像装置では
陰極基板と透光性基板との封着および距離の保持に用い
るスペーサ部材の高さが格段に低いため芯合わせが容易
でなく、偏芯して封着される場合が多い。このため、透
光性基板が陰極基板に対して傾くことにより解像度など
の特性に大きく影響を与えたり、封着部の軟質金属が一
様に張り出さずに封止不良となる問題点があった。By the way, PbO, Sb 2 S 3 , Se, Si, Cd, Zn,
When a semiconductor material made of As, Te, or the like is used, in particular, when a high electric field is applied to a photoelectric conversion film mainly composed of amorphous Se, the signal charges are avalanche-multiplied in the film, and the sensitivity is dramatically increased. it can. However, the photoelectric conversion film mainly composed of amorphous Se is vulnerable to heat, and when placed in a high temperature state of 50 ° C. or higher, its characteristics are remarkably impaired, such as the appearance of many white spots in an output image due to crystallization. Therefore, when sealing the glass tube having the electron source of the image pickup tube and the light-transmitting substrate having the photoelectric conversion target portion, a sealing material such as a sealing glass generally used for a display device such as an FED is applied. The step of firing at a high temperature (about 500 ° C.) cannot be performed. Usually, in manufacturing an image pickup tube, a soft metal such as indium having a cross-section processed into an arc is used and sealed by pressure. In the case of an image pickup tube, the glass tube is long, so it is easy to align the light-transmitting substrate / soft metal with the glass tube. Since the height of the spacer member used is extremely low, the alignment is not easy, and the sealing is often performed eccentrically. For this reason, there is a problem that characteristics such as resolution are greatly affected by the inclination of the translucent substrate with respect to the cathode substrate, and that the soft metal in the sealing portion does not protrude uniformly, resulting in poor sealing. Was.
【００１７】また陰極基板３０１の貫通孔３０１ａは電
子放出領域を避けた位置に形成する必要があるため、上
述した従来技術ではゲッタ３５１を収納する下部外囲器
３５１は陰極基板３０１の周縁部に設けられる。透光性
基板３１１とスペーサ部材３３１の封着部分と、下部外
囲器と陰極基板の封着部分が、両基板に対して直交する
方向でみて一部のみが重なるか交差する配置にある場合
には、透光性基板に軟質金属を用いて加圧により封着す
る工程で、周縁部に下部外囲器３５１が突出している陰
極基板３０１に対しては圧力を均一に加えることが困難
であり、陰極基板にクラックや破損が発生したり、また
は封着部の軟質金属が一様に張り出さずに透光性基板３
１１の封止が不良となる等の問題点があった。In addition, since the through-hole 301a of the cathode substrate 301 needs to be formed at a position avoiding the electron emission region, the lower envelope 351 for accommodating the getter 351 is provided at the peripheral portion of the cathode substrate 301 in the above-mentioned prior art. Provided. When the sealing portion between the translucent substrate 311 and the spacer member 331 and the sealing portion between the lower envelope and the cathode substrate are arranged such that only a part thereof overlaps or intersects when viewed in a direction orthogonal to both substrates. It is difficult to uniformly apply pressure to the cathode substrate 301 having the lower envelope 351 protruding from the periphery in the step of sealing the transparent substrate with a soft metal using pressure. There is a crack or breakage in the cathode substrate, or the soft metal in the sealing portion does not protrude evenly and the light-transmitting substrate 3
There was a problem that sealing of No. 11 became defective.
【００１８】さらに従来の撮像管や表示装置では、残留
ガス吸着手段として蒸発ゲッタや非蒸発ゲッタが用いら
れている。なかでも、外部から高周波の印加によりリン
グ状の金属部材を誘導加熱し、ゲッタを収納している下
部外囲器の内面に活性ゲッタ蒸着膜を形成する高周波加
熱ゲッタがよく用いられている。しかし、高周波加熱ゲ
ッタと、上側の外囲器の本体を構成する透光性基板３１
１とスペーサ部材３３１との封着に用いた軟質金属３３
２との距離が短いため、ゲッタが高周波よって加熱され
るより前に軟質金属３３２が溶融して真空不良となる問
題点があった。また下部外囲器３５０が小さいため内部
に設けられたゲッタのサイズが制限され、長期間にわた
り内部を高真空状態に保つことが困難であった。Further, in a conventional image pickup tube or display device, an evaporable getter or a non-evaporable getter is used as a residual gas adsorbing means. Above all, a high-frequency heating getter that inductively heats a ring-shaped metal member by applying a high frequency from the outside and forms an active getter vapor-deposited film on the inner surface of a lower envelope housing the getter is often used. However, the high-frequency heating getter and the translucent substrate 31 forming the body of the upper envelope
Soft metal 33 used for sealing between spacer 1 and spacer member 331
2, the soft metal 332 melts before the getter is heated by the high frequency, resulting in poor vacuum. Further, since the size of the lower envelope 350 is small, the size of the getter provided inside is limited, and it is difficult to keep the inside in a high vacuum state for a long time.
【００１９】そこで本発明の目的は、前述の問題点を解
決し、撮像装置の特性に影響を及ぼす陰極基板の変形や
透光性基板の偏芯・傾きを防止するとともに歩留まり良
く製造できる平面型撮像装置の構造とその製造方法を提
供するものである。Accordingly, an object of the present invention is to solve the above-mentioned problems, to prevent the deformation of the cathode substrate and the eccentricity / inclination of the light-transmitting substrate, which affect the characteristics of the image pickup device, and to produce a flat-type semiconductor device with good yield. An object of the present invention is to provide a structure of an imaging device and a method of manufacturing the same.
【００２０】[0020]
【課題を解決するための手段】請求項１に記載された平
面型撮像装置は、マトリクス状に配設された複数の電子
放出源を上面に有する陰極基板と、前記陰極基板の上面
に封着される上部外囲器と、前記陰極基板の下面に封着
される下部外囲器とを有し、前記上部外囲器内面には外
部からの入射光を透過する透光性の電極と光電変換素子
が積層して配設され、前記光電変換素子と陰極基板との
間には制御電極が配設され、陰極基板には上部外囲器と
下部外囲器を連通する孔が形成され、下部外囲器内には
ゲッタ部材が配設された平面型撮像装置であって、その
特徴は次の通りである。即ち、この平面型撮像装置は、
前記上部外囲器が、前記陰極基板に封着材を介して固着
されるスペーサ部材と封止金属部と透光性基板から構成
され、前記制御電極が、前記封止金属部を介して通電さ
れるように前記封止金属部と前記スペーサ部材の間に挟
持されて配設され、前記上部外囲器と下部外囲器が、陰
極基板に封着される部分の外周形状が実質的に同一であ
り、陰極基板に直交する方向から見て、その全周にわた
り少なくとも一部が重なり合うように陰極基板を挟んで
対面する位置において陰極基板に封着されていることを
特徴とする。According to a first aspect of the present invention, there is provided a flat-panel imaging device comprising: a cathode substrate having a plurality of electron emission sources arranged in a matrix on an upper surface; And a lower envelope sealed to the lower surface of the cathode substrate. The inner surface of the upper envelope includes a light-transmissive electrode for transmitting incident light from the outside and a photoelectric converter. The conversion element is disposed in a stacked manner, a control electrode is disposed between the photoelectric conversion element and the cathode substrate, and a hole communicating with the upper envelope and the lower envelope is formed in the cathode substrate, A flat-type imaging device in which a getter member is provided in a lower envelope, the features of which are as follows. That is, this planar imaging device
The upper envelope includes a spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a light-transmitting substrate, and the control electrode is energized through the sealing metal portion. The upper envelope and the lower envelope are disposed so as to be sandwiched between the sealing metal portion and the spacer member so that the outer peripheral shape of a portion sealed to the cathode substrate is substantially They are the same, and are sealed to the cathode substrate at positions facing each other with the cathode substrate interposed therebetween so that at least a part thereof overlaps over the entire circumference when viewed from a direction orthogonal to the cathode substrate.
【００２１】請求項２に記載された平面型撮像装置は、
マトリクス状に配設された複数の電子放出源を上面に有
する陰極基板と、前記陰極基板の上面に封着される上部
外囲器と、前記陰極基板の下面に封着される下部外囲器
とを有し、前記上部外囲器内面には外部からの入射光を
透過する透光性の電極と光電変換素子が積層して配設さ
れ、前記光電変換素子と陰極基板との間には制御電極が
配設され、陰極基板には上部外囲器と下部外囲器を連通
する孔が形成され、下部外囲器内にはゲッタ部材が配設
された平面型撮像装置であって、その特徴は次の通りで
ある。即ち、この平面型撮像装置は、前記上部外囲器
が、前記陰極基板に封着材を介して固着されるスペーサ
部材と封止金属部と透光性基板から構成され、前記制御
電極が、前記封止金属部を介して通電されるように前記
封止金属部と前記スペーサ部材の間に挟持されて配設さ
れ、陰極基板に直交する方向から見て、前記上部外囲器
と下部外囲器の一方の陰極基板に対する封着部分が、他
方の陰極基板に対する封着部分よりも内側にあり、かつ
両封着部分の間隔が周方向に沿って一定の規則性を有す
るように、前記上部外囲器と下部外囲器が陰極基板を挟
んで対面する位置において陰極基板に封着されているこ
とを特徴とする。According to a second aspect of the present invention, there is provided a flat-type imaging device comprising:
A cathode substrate having a plurality of electron emission sources arranged in a matrix on an upper surface, an upper envelope sealed to an upper surface of the cathode substrate, and a lower envelope sealed to a lower surface of the cathode substrate And a translucent electrode and a photoelectric conversion element that transmit incident light from the outside are stacked and disposed on the inner surface of the upper envelope, and between the photoelectric conversion element and the cathode substrate. A control electrode is disposed, a hole communicating with the upper envelope and the lower envelope is formed in the cathode substrate, and a getter member is disposed in the lower envelope, the planar imaging device including: The features are as follows. That is, in the flat-type imaging device, the upper envelope includes a spacer member, a sealing metal portion, and a light-transmitting substrate that are fixed to the cathode substrate via a sealing material, and the control electrode includes: The upper package and the lower package are sandwiched between the sealing metal unit and the spacer member so as to be energized through the sealing metal unit, and viewed from a direction perpendicular to the cathode substrate. The sealing part for one cathode substrate of the enclosure is located inside the sealing part for the other cathode substrate, and the interval between both sealing parts has a constant regularity along the circumferential direction. The upper envelope and the lower envelope are sealed to the cathode substrate at positions facing each other across the cathode substrate.
【００２２】請求項３に記載された平面型撮像装置は、
請求項又は２に記載の平面型撮像装置において、前記陰
極基板には陰極に通電するための配線が形成され、前記
陰極基板の前記スペーサ部材の周囲において前記配線上
には絶縁枠が配設され、前記封止金属部と配線が短絡し
ないように構成したことを特徴とする。According to a third aspect of the present invention, there is provided a flat-type imaging device comprising:
3. The flat-panel imaging device according to claim 2, wherein a wiring for energizing a cathode is formed on the cathode substrate, and an insulating frame is provided on the wiring around the spacer member of the cathode substrate. 4. In addition, the configuration is such that the sealing metal part and the wiring are not short-circuited.
【００２３】請求項４に記載された平面型撮像装置は、
請求項１又は２に記載の平面型撮像装置において、前記
下部外囲器が、前記陰極基板に封着される側が開口した
箱状部材で形成され、封着材を介して前記陰極基板に固
着されることを特徴とする。According to a fourth aspect of the present invention, there is provided a flat-type imaging device comprising:
3. The flat-type imaging device according to claim 1, wherein the lower envelope is formed of a box-shaped member whose side sealed with the cathode substrate is open, and is fixed to the cathode substrate via a sealing material. 4. It is characterized by being performed.
【００２４】請求項５に記載された平面型撮像装置は、
請求項１又は２に記載の平面型撮像装置において、前記
下部外囲器が、前記陰極基板に封着材を介して固着され
る絶縁性のスペーサ部材と封止金属部と基板から構成さ
れたことを特徴とする。According to a fifth aspect of the present invention, there is provided a flat-type imaging device comprising:
The flat-type imaging device according to claim 1, wherein the lower envelope includes an insulating spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a substrate. It is characterized by the following.
【００２５】請求項６に記載された平面型撮像装置は、
請求項１又は５に記載の平面型撮像装置において、前記
封止金属部の外周に均一な加圧下での封止を行う為の補
強枠が配設されたことを特徴とする。According to a sixth aspect of the present invention, there is provided a flat-type imaging device comprising:
The flat-type imaging device according to claim 1, wherein a reinforcing frame for performing sealing under uniform pressure is provided on an outer periphery of the sealing metal portion.
【００２６】請求項７に記載された平面型撮像装置は、
請求項１又は２に記載の平面型撮像装置において、前記
ゲッタ部材は通電加熱することによりゲッタ膜が形成さ
れるもので、通電する為のリード線が下部外囲器と陰極
基板の封着部分から左右ほぼ均等の位置になるように導
出されたことを特徴とする。[0026] According to a seventh aspect of the present invention, there is provided a flat-type imaging device comprising:
3. The flat-panel imaging device according to claim 1, wherein the getter member is formed with a getter film by being heated and energized, and a lead wire for energizing is a sealing portion between the lower envelope and the cathode substrate. 4. , So that the position is substantially equal to the left and right.
【００２７】請求項８に記載された平面型撮像装置は、
請求項１又は２又は５に記載の平面型撮像装置におい
て、前記封止金属部は、スペーサ部材と基板の間に係合
する段差を有することを特徴とする。[0027] The flat type imaging device according to claim 8 is
The flat-type imaging device according to claim 1, wherein the sealing metal portion has a step that engages between the spacer member and the substrate.
【００２８】請求項９に記載された平面型表示装置は、
請求項１又は２に記載の平面型表示装置において、前記
下部外囲器内に配設されるゲッタ部材は、通電または支
持する為のリード線が前記陰極基板と下部外囲器の封着
部分を貫通して外部に導出されたことを特徴とする。The flat display device according to claim 9 is
3. The flat display device according to claim 1, wherein the getter member disposed in the lower envelope has a lead wire for energizing or supporting the sealed portion between the cathode substrate and the lower envelope. And is led out to the outside.
【００２９】請求項１０に記載された平面型表示装置
は、請求項５に記載の平面型表示装置において、前記下
部外囲器内に配設されるゲッタ部材は、通電または支持
する為のリード線が基板を貫通して外部に導出されたこ
とを特徴とする。According to a tenth aspect of the present invention, there is provided the flat panel display according to the fifth aspect, wherein the getter member provided in the lower envelope has a lead for energizing or supporting. The wire penetrates the substrate and is led to the outside.
【００３０】請求項１１に記載された平面型製造装置の
製造方法は、マトリクス状に配設された複数の電子放出
源を上面に有する陰極基板と、前記陰極基板の上面に封
着される上部外囲器と、前記陰極基板の下面に封着され
る下部外囲器とを有し、前記上部外囲器の内面には外部
からの入射光を透過する透光性の電極と光電変換素子が
積層して配設され、前記光電変換素子と陰極基板との間
には制御電極が配設され、陰極基板には上部外囲器と下
部外囲器を連通する孔が形成され、下部外囲器内にはゲ
ッタ部材が配設され、前記上記外囲器は、前記陰極基板
に封着材を介して固着されるスペーサ部材と封止金属部
と透光性基板から構成された平面型撮像装置を製造する
為の製造方法である。そして、その特徴は、陰極基板に
電子放出源を形成する工程と、上部外囲器の透光性基板
に透光性の電極および光電変換素子を構成する工程と、
陰極基板に上部外囲器のスペーサ部材を固着する工程
と、陰極基板に下部外囲器を固着する工程と、透光性基
板とスペーサ部材の間に封止金属部を介在させた状態で
陰極基板及び下部外囲器の少なくとも一方と透光性基板
とを相手方に向けて相対的に押圧することにより上部外
囲器を封止する工程を有する点にある。A method for manufacturing a flat-type manufacturing apparatus according to claim 11, wherein a cathode substrate having a plurality of electron emission sources arranged in a matrix on an upper surface, and an upper portion sealed on the upper surface of the cathode substrate An outer envelope, a lower envelope sealed to the lower surface of the cathode substrate, and a translucent electrode and a photoelectric conversion element for transmitting incident light from the outside on an inner surface of the upper envelope. Are disposed in a stack, a control electrode is disposed between the photoelectric conversion element and the cathode substrate, and a hole is formed in the cathode substrate to communicate the upper envelope and the lower envelope. A getter member is provided in the envelope, and the envelope is a planar type including a spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a light-transmitting substrate. This is a manufacturing method for manufacturing an imaging device. And the feature is a step of forming an electron emission source on the cathode substrate, a step of forming a light-transmitting electrode and a photoelectric conversion element on the light-transmitting substrate of the upper envelope,
A step of fixing the spacer member of the upper envelope to the cathode substrate; a step of fixing the lower envelope to the cathode substrate; and a step of fixing the cathode with a sealing metal part interposed between the light-transmitting substrate and the spacer member. The method includes a step of sealing the upper envelope by relatively pressing at least one of the substrate and the lower envelope and the light-transmitting substrate toward the other party.
【００３１】請求項１２に記載された平面型製造装置の
製造方法は、マトリクス状に配設された複数の電子放出
源を上面に有する陰極基板と、前記陰極基板の上面に封
着される上部外囲器と、前記陰極基板の下面に封着され
る下部外囲器とを有し、前記上部外囲器の内面には外部
からの入射光を透過する透光性の電極と光電変換素子が
積層して配設され、前記光電変換素子と陰極基板との間
には制御電極が配設され、陰極基板には上部外囲器と下
部外囲器を連通する孔が形成され、下部外囲器内にはゲ
ッタ部材が配設され、前記上部外囲器は、前記陰極基板
に封着材を介して固着されるスペーサ部材と、封止金属
部と、透光性基板とから構成され、前記下部外囲器は、
前記陰極基板に封着材を介して固着される絶縁性のスペ
ーサ部材と封止金属部と基板から構成された平面型撮像
装置を製造する為の製造方法である。そして、その特徴
は、陰極基板に電子放出源を形成する工程と、上部外囲
器の透光性基板に透光性の電極および光電変換素子を構
成する工程と、陰極基板に上部外囲器のスペーサ部材を
固着する工程と、陰極基板に下部外囲器のスペーサ部材
を固着する工程と、上部外囲器の透光性基板と上部外囲
器のスペーサ部材の間及び下部外囲器の基板と下部外囲
器のスペーサ部材の間にそれぞれ封止金属部を介在させ
た状態で上部外囲器の透光性基板と下部外囲器の基板を
相手方に向けて相対的に押圧することにより上部外囲器
と下部外囲器を封止する工程を有する点にある。According to a second aspect of the present invention, there is provided a method of manufacturing a flat type manufacturing apparatus, comprising: a cathode substrate having a plurality of electron emission sources arranged in a matrix on an upper surface; and an upper portion sealed on the upper surface of the cathode substrate. An outer envelope, a lower envelope sealed to the lower surface of the cathode substrate, and a translucent electrode and a photoelectric conversion element for transmitting incident light from the outside on an inner surface of the upper envelope. Are disposed in a stack, a control electrode is disposed between the photoelectric conversion element and the cathode substrate, and a hole is formed in the cathode substrate to communicate the upper envelope and the lower envelope. A getter member is provided in the envelope, and the upper envelope includes a spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a light-transmitting substrate. , The lower envelope comprises:
This is a manufacturing method for manufacturing a flat-type imaging device including an insulating spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a substrate. The features include a step of forming an electron emission source on the cathode substrate, a step of forming a light-transmitting electrode and a photoelectric conversion element on the light-transmitting substrate of the upper envelope, and a step of forming the upper envelope on the cathode substrate. Fixing the spacer member of the lower envelope to the cathode substrate; and interposing the spacer member between the translucent substrate of the upper envelope and the spacer member of the upper envelope and of the lower envelope. Pressing the light-transmitting substrate of the upper envelope and the substrate of the lower envelope relatively toward each other with the sealing metal part interposed between the substrate and the spacer member of the lower envelope. And a step of sealing the upper envelope and the lower envelope.
【００３２】請求項１３に記載された平面型撮像装置の
製造方法は、請求項１１又は１２に記載の平面型撮像装
置の製造方法において、高真空雰囲気中において上部外
囲器と下部外囲器を封止する工程を有し、上部外囲器と
下部外囲器が高真空状態に保持されることを特徴とす
る。According to a thirteenth aspect of the present invention, there is provided a method of manufacturing a flat type imaging device according to the eleventh or twelfth aspect, wherein the upper envelope and the lower envelope are arranged in a high vacuum atmosphere. Wherein the upper envelope and the lower envelope are maintained in a high vacuum state.
【００３３】請求項１４に記載された平面型撮像装置の
製造方法は、請求項１１又１２に記載の平面型撮像装置
の製造方法であって、あらかじめ下部外囲器に排気孔を
形成する工程と、上部外囲器を陰極基板に封着した後、
上部外囲器と下部外囲器の内部を排気して前記排気孔を
封止する工程を有することを特徴とする。According to a fourteenth aspect of the present invention, there is provided a method of manufacturing a flat type imaging device according to the eleventh or twelfth aspect, wherein an exhaust hole is previously formed in the lower envelope. After sealing the upper envelope to the cathode substrate,
The method further comprises the step of evacuating the interior of the upper envelope and the lower envelope to seal the exhaust hole.
【００３４】請求項１５に記載された平面型撮像装置の
製造方法は、請求項１１又は１２に記載の平面型撮像装
置の製造方法であって、高真空雰囲気中において、上部
外囲器が封着された陰極基板の下部外囲器が封止される
側にゲッタ部材により膜を形成する工程と、前記ゲッタ
部材を取り除いて下部外囲器を封止する工程が行なわれ
ることを特徴する。According to a fifteenth aspect of the present invention, there is provided a method of manufacturing a flat type imaging device according to the eleventh or twelfth aspect, wherein the upper envelope is sealed in a high vacuum atmosphere. A step of forming a film with a getter member on a side of the attached cathode substrate where the lower envelope is sealed, and a step of removing the getter member and sealing the lower envelope are performed.
【００３５】[0035]
【発明の実施の形態】以下添付図面を参照し本発明の実
施の形態を説明する。図１に本発明の実施の形態である
平面型撮像装置の構造を示す断面図を示し、図２にイン
ジウムなどの軟質金属を用いたシール材の加工断面形状
例を示し、また図３に上部外囲器と下部外囲器の陰極基
板に対する封着部分（即ち陰極基板及びこれを挟む両外
囲器の端面）付近の断面拡大図と上面図を示す。図１の
平面撮像装置は上部外囲器圧着形である点において、後
述する第２の例の平面型撮像装置が上下両外囲器圧着形
であるのと相違する。Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a cross-sectional view showing a structure of a flat-type imaging device according to an embodiment of the present invention, FIG. 2 shows an example of a processed cross-sectional shape of a sealing material using a soft metal such as indium, and FIG. A cross-sectional enlarged view and a top view of the vicinity of the sealed portion of the envelope and the lower envelope to the cathode substrate (that is, the end faces of the cathode substrate and both envelopes sandwiching the cathode substrate) are shown. The flat image pickup device of FIG. 1 is different from a flat image pickup device of a second example, which will be described later, in that it is a crimp type of upper and lower envelopes in that the flat image pickup device of FIG.
【００３６】図１の電子放出部２ａおよび冷陰極電極配
線４ａの構成は図７に示した前記特許公開公報の冷陰極
アレイ部の構成とまったく同じである。陰極基板１上に
電子放出部２ａとそれに外部から電圧を印加するための
冷陰極電極配線４ａが電気的に接続されて形成され、上
部外囲器３０と下部外囲器５０との雰囲気を同一にする
ための貫通孔１ａが陰極基板１に設けられている。The configuration of the electron emission section 2a and the cold cathode electrode wiring 4a in FIG. 1 is exactly the same as the configuration of the cold cathode array section in the above-mentioned patent publication shown in FIG. An electron emission portion 2a and a cold cathode electrode wire 4a for applying a voltage from outside are formed on the cathode substrate 1 so as to be electrically connected, and the upper envelope 30 and the lower envelope 50 have the same atmosphere. Through hole 1a is provided in the cathode substrate 1.
【００３７】上部外囲器３０の一部を構成する透光性基
板１１は、例えばガラスなどにより構成される。透光性
基板１１の内面上には透明電極１２が形成され、この透
明電極１２は透光性基板１１内に埋設されたＭｏなどの
金属を用いた信号取り出しピン１５と電気的に接続され
て外側に電気的に導出されている。さらに前記透明電極
１２の上には光電変換膜１３が形成されて光電変換ター
ゲット部１０を構成している。The light-transmitting substrate 11 constituting a part of the upper envelope 30 is made of, for example, glass. A transparent electrode 12 is formed on the inner surface of the translucent substrate 11, and the transparent electrode 12 is electrically connected to a signal extraction pin 15 using a metal such as Mo embedded in the translucent substrate 11. It is electrically led out. Further, a photoelectric conversion film 13 is formed on the transparent electrode 12 to constitute a photoelectric conversion target unit 10.
【００３８】陰極基板１の上面には、上部外囲器３０の
一部を構成するスペーサ部材３１が固着されている。こ
のスペーサ部材３１には、例えば薄いガラスリングのよ
うな絶縁性の筒状部材が用いられている。このスペーサ
部材３１は、グリッド電極８を係止する段部３１ａを上
部端面の内周縁側に有する構造であり、その下部端面が
シール材３２により陰極基板１の上面に固着されてい
る。グリッド電極８と陰極基板１との間隔は例えば約
０．２ｍｍ〜１ｍｍとされている。On the upper surface of the cathode substrate 1, a spacer member 31 constituting a part of the upper envelope 30 is fixed. For the spacer member 31, an insulating tubular member such as a thin glass ring is used. The spacer member 31 has a structure in which a step portion 31a for locking the grid electrode 8 is provided on the inner peripheral side of the upper end surface, and the lower end surface is fixed to the upper surface of the cathode substrate 1 by a sealing material 32. The distance between the grid electrode 8 and the cathode substrate 1 is, for example, about 0.2 mm to 1 mm.
【００３９】上部外囲器３０の一部を構成する封止金属
部としてのシール材３３が、スペーサ部材３１の上端と
透光性基板１１との間に挿入されている。シール材３３
にはインジウムなどの軟質金属が用いられている。この
シール部材３３は、導電性の筒状の部材（例えばステン
レス等）であるシール材補強枠３４の内面側に設けられ
ている環状乃至筒状の部材である。図示しない治具を用
いて透光性基板１１を陰極基板１に向けて加圧すること
により、透光性基板１１がシール材３３を介してスペー
サ部材３１に固着される。また、グリッド電極８は、シ
ール材３３とスペーサ部材３１の間に挟持されて固定さ
れ、シール材３３に導通するのでシール材補強枠３４を
介して外部の回路に接続することができる。A sealing material 33 as a sealing metal part constituting a part of the upper envelope 30 is inserted between the upper end of the spacer member 31 and the translucent substrate 11. Seal material 33
Is made of a soft metal such as indium. The sealing member 33 is an annular or cylindrical member provided on the inner surface side of a sealing member reinforcing frame 34 which is a conductive cylindrical member (eg, stainless steel). By pressing the light-transmitting substrate 11 toward the cathode substrate 1 using a jig (not shown), the light-transmitting substrate 11 is fixed to the spacer member 31 via the sealing material 33. Further, the grid electrode 8 is sandwiched and fixed between the seal member 33 and the spacer member 31 and is electrically connected to the seal member 33, so that the grid electrode 8 can be connected to an external circuit via the seal member reinforcing frame.
【００４０】シール材３３は図２（ａ）〜（ｆ）に示す
ような断面形状、即ちスペーサ部材３１と透光性基板１
１の間に係合しうる段差（凸部）を備えた形状に予め加
工されている。なお図２（ａ）〜（ｆ）に示したシール
部材は互いに形状が異なっているが、表示の煩雑を避け
るためにいずれも同一の符号３３で示した。また、図２
は図１におけるシール部材３３と同様の切断面における
断面図であるが、略筒状のシール材を切断して現れる２
つの断面の内、一方のみを表示したものである。シール
材３３をこのような形状とすれば、上述した加圧時に透
光性基板１１とスペーサ部材３１が偏芯した状態に固定
されるのが防止され、かつ透光性基板１１の傾きを防止
することができる。なお、スペーサ部材は、封着時に偏
芯しないように治具等で一次的に固定する等の手段をと
れば、図２（ｇ）に示すような単なる断面矩形のリング
状であっても実用上満足し得る封着効果は得られる。The sealing member 33 has a sectional shape as shown in FIGS. 2A to 2F, that is, the spacer member 31 and the light-transmitting substrate 1.
It is preliminarily processed into a shape having a step (projection) that can be engaged between the two. Although the seal members shown in FIGS. 2A to 2F have different shapes from each other, they are all denoted by the same reference numeral 33 in order to avoid complicated display. FIG.
FIG. 2 is a cross-sectional view of a cut surface similar to the seal member 33 in FIG.
Only one of the cross sections is shown. When the sealing material 33 has such a shape, the translucent substrate 11 and the spacer member 31 are prevented from being fixed in an eccentric state during the above-described pressurization, and the inclination of the translucent substrate 11 is prevented. can do. If the spacer member is temporarily fixed with a jig or the like so as not to be eccentric at the time of sealing, even if it is a ring shape having a simple rectangular cross section as shown in FIG. A satisfactory sealing effect can be obtained.
【００４１】陰極基板１の上に形成された電極配線４ａ
の上には、スペーサ部材３１の周囲であって、かつシー
ル材補強枠３４の下側の位置に、絶縁枠６０が配設され
ている。この絶縁枠６０は、封止金属部であるシール材
３３と電極配線４ａが短絡しないように設けられてい
る。なお、電極配線４ａは、絶縁保護膜４ｂに覆われて
おり、他の電極類等とは無用な導通が生じないようには
なっているが、仮にこの絶縁保護膜４ｂが薄くても絶縁
枠６０を設けておけばシール材３３と電極配線４ａの絶
縁はより確実に保持される。The electrode wiring 4a formed on the cathode substrate 1
An insulating frame 60 is disposed around the spacer member 31 and below the sealing material reinforcing frame 34. The insulating frame 60 is provided so that the sealing material 33 which is a sealing metal part and the electrode wiring 4a do not short-circuit. The electrode wiring 4a is covered with an insulating protective film 4b so that unnecessary conduction with other electrodes or the like does not occur. Even if the insulating protective film 4b is thin, an insulating frame is formed. By providing 60, the insulation between the sealing material 33 and the electrode wiring 4a is more reliably maintained.
【００４２】図３（ａ）〜（ｃ）に示すように、上部外
囲器３０を構成するスペーサ部材３１と下部外囲器５０
（図では第２の例における下部外囲器５０の一部である
下部外囲器壁部５０ｂ）は、陰極基板１の上面と下面に
それぞれ封着される部分の外周形状が実質的に同一の円
形であり、陰極基板１に直交する方向から見て、その全
周にわたり少なくとも一部（符号７０で示す部分）が重
なり合うように、陰極基板１を挟んで対面する位置関係
で陰極基板１に封着されている。かかる寸法・形状・位
置関係において、図示しない適切な治具を用いることで
スペーサ部材３１と下部外囲器５０を陰極基板１の上面
及び下面にそれぞれ固着すれば、この固着工程時に陰極
基板１に加わる圧力を均等に分散することができ、陰極
基板のクラックや破損を防ぐことができる。As shown in FIGS. 3A to 3C, the spacer member 31 and the lower envelope 50 constituting the upper envelope 30 are formed.
(In the figure, the lower envelope wall 50b which is a part of the lower envelope 50 in the second example) has substantially the same outer peripheral shape at the portions respectively sealed to the upper surface and the lower surface of the cathode substrate 1. When viewed from a direction perpendicular to the cathode substrate 1, the cathode substrate 1 is positioned on the cathode substrate 1 in a positional relationship facing the cathode substrate 1 so that at least a part thereof (a portion indicated by reference numeral 70) overlaps the entire circumference thereof. Sealed. In such a size, shape, and positional relationship, if the spacer member 31 and the lower envelope 50 are fixed to the upper surface and the lower surface of the cathode substrate 1 by using an appropriate jig (not shown), The applied pressure can be evenly dispersed, and cracks and breakage of the cathode substrate can be prevented.
【００４３】図３（ｄ）及び（ｅ）は、陰極基板１に直
交する方向から見て、下部外囲器５０（図では第２の例
における下部外囲器５０の一部である下部外囲器壁部５
０ｂ）の陰極基板１に対する封着部分が、上部外囲器３
０を構成するスペーサ部材３１の陰極基板に対する封着
部分よりも内側にあり、かつ両封着部分の間隔が周方向
に沿って一定の規則性を有するように、スペーサ部材３
１と下部外囲器５０が陰極基板１を挟んで対面する位置
関係で陰極基板１に封着されている場合である。ここ
で、一定の規則性とは、（ｄ）では等間隔であり、
（ｅ）では円形の封着部を有するスペーサ部材３１に対
して下部外囲器５０（図では第２の例における下部外囲
器５０の一部である下部外囲器壁部５０ｂ）の封着部分
がこの円形の内側に配置される正方形であって両者は中
心を一致させている場合に得られる関係である。かかる
場合にも、前記固着工程時に陰極基板１の特定部分に圧
力が集中して加わることが防止され、上述した図３
（ａ）〜（ｃ）の場合と略同一の陰極基板のクラックや
破損を防ぐ効果が得られる。FIGS. 3D and 3E show the lower envelope 50 (in the figure, the lower envelope 50 which is a part of the lower envelope 50 in the second example) when viewed from a direction perpendicular to the cathode substrate 1. Enclosure wall 5
0b) of the upper envelope 3
The spacer member 31 is located inside the sealing portion of the spacer member 31 constituting the cathode substrate with respect to the cathode substrate, and the interval between the sealing portions has a certain regularity along the circumferential direction.
1 and the lower envelope 50 are sealed to the cathode substrate 1 in a positional relationship facing each other with the cathode substrate 1 interposed therebetween. Here, the constant regularity is an equal interval in (d),
In (e), sealing of the lower envelope 50 (the lower envelope wall 50b which is a part of the lower envelope 50 in the second example in the figure) with respect to the spacer member 31 having a circular sealing portion. This is a relationship obtained when the attachment portion is a square arranged inside the circle and the centers are aligned. Also in such a case, the pressure is prevented from being concentrated on a specific portion of the cathode substrate 1 at the time of the fixing step.
The effect of preventing cracks and breakage of the cathode substrate is substantially the same as in the cases (a) to (c).
【００４４】図１に示したように、下部外囲器５０は端
面側が開口した円筒形又は角筒形の凹形状の蓋部材であ
り、中心軸付近には排気管を有する排気口５６が設けら
れており、シール材５２により前述した図３の位置関係
で陰極基板１の下面に固着されている。また下部外囲器
５０の内部には通電ゲッタ５１が収納されている。この
通電ゲッタ５１は直線状の芯線の周りにゲッタ物質が被
着されているものであり、ゲッタ物質の両端から一対の
通電端子（通電する為のリード線）５３が軸線を一致さ
せて突出している。この通電端子５３が、下部外囲器５
０と陰極基板１との封着部であるシール材５２を気密に
貫通して外部に導出されており、通電ゲッタ５１に外部
から通電することができるようになっている。As shown in FIG. 1, the lower envelope 50 is a cylindrical or prismatic concave lid member having an open end face, and an exhaust port 56 having an exhaust pipe is provided near the central axis. 3 and is fixed to the lower surface of the cathode substrate 1 in the positional relationship shown in FIG. An energization getter 51 is housed inside the lower envelope 50. The current-carrying getter 51 has a getter material adhered around a linear core wire, and a pair of current-carrying terminals (lead wires for conducting current) 53 project from both ends of the getter material with their axes aligned. I have. The energization terminal 53 is connected to the lower envelope 5
The sealing member 52, which is a sealing portion between the cathode substrate 0 and the cathode substrate 1, is hermetically penetrated and led out to the outside, so that the energization getter 51 can be energized from the outside.
【００４５】なお、上述のような構造で下部外囲器５０
内の所定位置に通電ゲッタ５１を配置するためには、下
部外囲器５０を陰極基板１の下面に封着する際に、下部
外囲器５０の開口した端面の上に通電端子５３が引っ掛
かるように通電ゲッタ５１を掛け渡し、その状態で通電
ゲッタ５１のゲッタ物質の位置を決め、そのまま封着す
る。ここで、封着時に通電ゲッタ５１がバランスを崩し
て位置ずれしないようにするため、通電端子５３が下部
外囲器の封着位置で均等な配置となるようにし、加圧時
に加圧力が均等に加わってがたつきがなくなるようにす
るとよい。The lower envelope 50 having the above-described structure is used.
In order to arrange the energization getter 51 at a predetermined position in the inside, when the lower envelope 50 is sealed to the lower surface of the cathode substrate 1, the energization terminal 53 is hooked on the open end surface of the lower envelope 50. Thus, the position of the getter material of the current-carrying getter 51 is determined in this state, and sealing is performed as it is. Here, in order to prevent the energization getter 51 from losing its balance and being displaced during sealing, the energization terminals 53 are arranged uniformly at the sealing position of the lower envelope. It is advisable to join the game so that there is no play.
【００４６】あるいは、図４に示すように、一対の通電
端子５３，５３に対して均等である一対の位置で封着部
分を貫通するように一対の支持フレーム５９，５９を設
けてもよい。この図示の例では、円形の下部外囲器５０
に対して、一対の通電端子５３，５３と一対の支持フレ
ーム５９，５９を円形の下部外囲器５０の周方向に沿っ
て中心角度で４５度の間隔となるような半径の位置に配
置した。このようにすれば、封着部のシール材５２の厚
さをさらに均等にでき、封着時の加圧力の分散化がさら
に確実になる。一対の支持フレーム５９，５９は、封着
時には外囲器の外側で通電端子５３，５３と図示しない
共通のフレームに接続されており、下部外囲器５０の円
形の封着領域に対する位置決めが容易であるが、封着作
業完了後にはフレームから切断する。支持フレーム５
９，５９は通電ゲッタ５１には接続されておらず、ゲッ
タ活性化のための通電には関与しない。Alternatively, as shown in FIG. 4, a pair of support frames 59, 59 may be provided so as to penetrate the sealing portion at a pair of positions which are equal to the pair of conducting terminals 53, 53. In the illustrated example, the lower envelope 50 is circular.
On the other hand, the pair of energizing terminals 53 and 53 and the pair of support frames 59 and 59 are arranged at a radius of 45 degrees at the center angle along the circumferential direction of the circular lower envelope 50. . By doing so, the thickness of the sealing material 52 at the sealing portion can be made more uniform, and the dispersion of the pressing force at the time of sealing can be further ensured. The pair of support frames 59, 59 are connected to the energizing terminals 53, 53 and a common frame (not shown) outside the envelope at the time of sealing, so that positioning of the lower envelope 50 with respect to the circular sealing region is easy. However, after the sealing operation is completed, it is cut from the frame. Support frame 5
9 and 59 are not connected to the energization getter 51 and do not participate in energization for activating the getter.
【００４７】上下両外囲器内の雰囲気は貫通孔１ａによ
り同一となっており、排気管を通して内部雰囲気を高真
空状態にした後、排気口５６をガスバーナなどの加熱に
より溶融し封着する。その後通電端子５３に通電するこ
とで活性ゲッタ膜５５を下部外囲器内に形成する。この
活性ゲッタ膜５５が外囲器内に残留したガスを吸着して
外囲器内の真空度を保持乃至向上させる。The atmosphere in both the upper and lower envelopes is the same due to the through hole 1a. After the internal atmosphere is brought into a high vacuum state through an exhaust pipe, the exhaust port 56 is melted and sealed by heating with a gas burner or the like. Thereafter, by energizing the energizing terminal 53, the active getter film 55 is formed in the lower envelope. The active getter film 55 adsorbs the gas remaining in the envelope to maintain or improve the degree of vacuum in the envelope.
【００４８】本例の平面型撮像装置の製造工程を、各部
材の組み立て工程を中心に説明する。陰極基板１に電子
放出部２ａを形成する。上部外囲器３０の透光性基板１
１に透明電極１２および光電変換膜１３を構成する。陰
極基板１に上部外囲器３０のスペーサ部材３１を固着す
る。陰極基板１に下部外囲器５０を固着する。透光性基
板１１とスペーサ部材３１の間にシール材３３（封止金
属部）を介在させた状態で陰極基板１及び下部外囲器５
０の少なくとも一方と、透光性基板１１とを、相手方に
向けて相対的に押圧して上部外囲器３０を封止する。こ
こで環状のシール材補強枠３４は、均一な加圧下で上記
封止作業を行うために有効である。The manufacturing process of the flat-type imaging device of the present embodiment will be described focusing on the assembling process of each member. An electron emission portion 2a is formed on the cathode substrate 1. Transparent substrate 1 of upper envelope 30
1 comprises a transparent electrode 12 and a photoelectric conversion film 13. The spacer member 31 of the upper envelope 30 is fixed to the cathode substrate 1. The lower envelope 50 is fixed to the cathode substrate 1. The cathode substrate 1 and the lower envelope 5 with the sealing material 33 (sealing metal portion) interposed between the translucent substrate 11 and the spacer member 31.
0 and the translucent substrate 11 are relatively pressed against each other to seal the upper envelope 30. Here, the annular sealing material reinforcing frame 34 is effective for performing the sealing operation under uniform pressure.
【００４９】次に、本発明の実施の形態の第２の例を図
５を参照して説明する。図１の平面撮像装置は、下部外
囲器５０は予め容器状に作製されているが、上部外囲器
は透光性基板１１とスペーサ部材３１をシール部材３３
で組み立て時に封着する上部外囲器圧着形であった。こ
れに対し、第２の例の平面型撮像装置は上下両外囲器と
もにシール部材を用いて封着する構造の上下両外囲器圧
着形である。Next, a second example of the embodiment of the present invention will be described with reference to FIG. In the planar imaging device of FIG. 1, the lower envelope 50 is formed in a container shape in advance, but the upper envelope is formed by sealing the transparent substrate 11 and the spacer member 31 with the sealing member 33.
It was a crimping type of upper envelope which is sealed at the time of assembling. On the other hand, the flat-type imaging device of the second example is a crimping type of the upper and lower envelopes in which both the upper and lower envelopes are sealed using a seal member.
【００５０】即ち、図５に示すように、下部外囲器５０
は、陰極基板１の下面に封着された環状（乃至筒状）の
下部外囲器壁部５０ｂと、下部外囲器壁部５０ｂの開口
を塞ぐ下部外囲器基板５０ａと、下部外囲器壁部５０ｂ
と下部外囲器基板５０ａの間を封止するシール部材５７
を有している。下部外囲器壁部５０ｂと下部外囲器基板
５０ａは絶縁性材料からなり、シール部材５７は前記シ
ール部材３３と同材質からなる。That is, as shown in FIG.
A lower (or cylindrical) lower envelope wall 50b sealed to the lower surface of the cathode substrate 1, a lower envelope substrate 50a for closing the opening of the lower envelope wall 50b, Container wall 50b
Sealing member 57 for sealing between the lower envelope substrate 50a and the
have. The lower envelope wall 50b and the lower envelope substrate 50a are made of an insulating material, and the seal member 57 is made of the same material as the seal member 33.
【００５１】下部外囲器５０内にはゲッタ５１が設けら
れている。ゲッタ５１は一対の通電端子５３を有する
が、第１の例におけるゲッタ５１と異なり、２本の通電
端子はゲッタ５１の長手方向と直交する同方向に曲げら
れて全体としてコ字状に成形されている。このゲッタの
２本の通電端子５３は、下部外囲器基板５０ａに形成さ
れた２個の貫通孔を介して外囲器外に導出されている。
通電端子と貫通孔の隙間はシールガラスなどのシール材
料５４によって気密に充填されている。A getter 51 is provided in the lower envelope 50. Although the getter 51 has a pair of energizing terminals 53, unlike the getter 51 in the first example, the two energizing terminals are bent in the same direction orthogonal to the longitudinal direction of the getter 51 and are formed into a U-shape as a whole. ing. The two energizing terminals 53 of the getter are led out of the envelope through two through holes formed in the lower envelope substrate 50a.
The gap between the current-carrying terminal and the through hole is hermetically filled with a sealing material 54 such as sealing glass.
【００５２】上部外囲器の構成は第１の例と同一であ
り、図１と同一の符号を付して説明を省略する。The structure of the upper envelope is the same as that of the first embodiment, and the same reference numerals as those in FIG.
【００５３】本例の平面型撮像装置の製造工程を説明す
る。陰極基板１の上面に電子放出部２ａを形成する。ま
た、上部外囲器３０の透光性基板１１に透明電極１２お
よび光電変換膜１３を構成する。次に、陰極基板１に上
部外囲器３０のスペーサ部材３１を固着する。次に、陰
極基板１の下面に下部外囲器５０の下部外囲器壁部５０
ｂを固着する。そして、上部外囲器３０の透光性基板１
１とスペーサ部材３１の間及び下部外囲器５０の下部外
囲器基板５０ａと下部外囲器壁部５０ｂの間にそれぞれ
シール部材３３，５７を介在させた状態で、透光性基板
１１と下部外囲器基板５０ａを相手方に向けて相対的に
押圧する。これにより、上部外囲器３０と下部外囲器５
０を同時に封着することができる。The manufacturing process of the flat-type imaging device of this embodiment will be described. An electron emission portion 2a is formed on the upper surface of the cathode substrate 1. Further, the transparent electrode 12 and the photoelectric conversion film 13 are formed on the translucent substrate 11 of the upper envelope 30. Next, the spacer member 31 of the upper envelope 30 is fixed to the cathode substrate 1. Next, the lower envelope wall 50 of the lower envelope 50 is provided on the lower surface of the cathode substrate 1.
b is fixed. Then, the transparent substrate 1 of the upper envelope 30
1 and the spacer member 31, and between the lower envelope substrate 50a and the lower envelope wall 50b of the lower envelope 50 with the sealing members 33 and 57 interposed therebetween, respectively. The lower envelope substrate 50a is relatively pressed toward the other party. Thereby, the upper envelope 30 and the lower envelope 5
0 can be sealed at the same time.
【００５４】本例の平面型撮像装置の製造工程における
上部外囲器３０と下部外囲器５０を封止する工程は、少
なくとも一方は高真空雰囲気中において行なう。これに
よって上部外囲器３０と下部外囲器５０の内部は高真空
状態に保持される。封着後、ゲッタ５１を用いて下部外
囲器５０の内面に活性ゲッタ膜５５を形成する点は第１
の例と同一である。At least one of the steps of sealing the upper envelope 30 and the lower envelope 50 in the manufacturing process of the flat-type imaging device of this embodiment is performed in a high vacuum atmosphere. As a result, the interiors of the upper envelope 30 and the lower envelope 50 are maintained in a high vacuum state. After the sealing, the active getter film 55 is formed on the inner surface of the lower envelope 50 using the getter 51 in the first point.
Is the same as the example.
【００５５】次に、本発明の実施の形態の第３の例を図
６を参照して説明する。図６の本例の平面撮像装置は、
図５の第２の平面撮像装置からゲッタ５１及び下部外囲
器基板５０ａの貫通孔を除いた他は、図５の平面撮像装
置と同一構造である。よって、図５と同一の符号を付し
て構成の説明は省略する。Next, a third embodiment of the present invention will be described with reference to FIG. The planar imaging device of the present example in FIG.
5 has the same structure as the planar imaging device of FIG. 5 except that the getter 51 and the through-hole of the lower envelope substrate 50a are removed from the second planar imaging device of FIG. Therefore, the same reference numerals as in FIG. 5 are assigned and the description of the configuration is omitted.
【００５６】本例の平面撮像装置にゲッタがない理由
は、本例の平面撮像装置の製造方法の特徴にある。本例
の平面型撮像装置の製造工程を説明する。図６（ａ）に
示すように陰極基板１の上面に上部外囲器３０を封着
し、下面には下部外囲器壁部５０ｂを固着する。次に高
真空雰囲気中において、同図中に示すように陰極基板１
の下部外囲器３０が封止される側（即ち下部外囲器壁部
５０ｂの内側）に、ゲッタ保持基板５０ｃに取り付けた
ゲッタ部材５１を配置し、陰極基板１の下面に活性ゲッ
タ膜５５を形成する。次に、高真空雰囲気中に配置した
ままで、ゲッタ部材５１を取り除いてから、下部外囲器
５０を封止する。なお、図５に示す例では下部外囲器基
板５０ａの内面にも活性ゲッタ膜５５が形成されるが、
本例では活性ゲッタ膜５５は陰極基板１の下面にのみ形
成される。よって、ゲッタ部材５１は活性時にゲッタ物
質を陰極基板１の下面のみに向けて放射するように構成
されたものであればよい。The reason why there is no getter in the planar imaging device of the present embodiment lies in the feature of the method of manufacturing the planar imaging device of the present embodiment. The manufacturing process of the flat-type imaging device of this example will be described. As shown in FIG. 6A, the upper envelope 30 is sealed on the upper surface of the cathode substrate 1, and the lower envelope wall 50b is fixed on the lower surface. Next, in a high vacuum atmosphere, as shown in FIG.
The getter member 51 attached to the getter holding substrate 50c is disposed on the side where the lower envelope 30 is sealed (ie, inside the lower envelope wall 50b), and the active getter film 55 is formed on the lower surface of the cathode substrate 1. To form Next, the lower envelope 50 is sealed after the getter member 51 is removed while being placed in the high vacuum atmosphere. In the example shown in FIG. 5, the active getter film 55 is also formed on the inner surface of the lower envelope substrate 50a.
In this example, the active getter film 55 is formed only on the lower surface of the cathode substrate 1. Therefore, the getter member 51 only needs to be configured to emit the getter material toward only the lower surface of the cathode substrate 1 when activated.
【００５７】このような構成とすることにより、ゲッタ
ー部材のリード線が封止部分を通ることがないので、封
止部分の気密性が向上する。また、リード線が封止部分
を通ることがないので加圧力が不均一になることもな
く、取り付け精度が向上する。また、ゲッター部材がな
い分、厚みを薄くすることも可能となる。With such a configuration, the lead wire of the getter member does not pass through the sealing portion, so that the airtightness of the sealing portion is improved. Further, since the lead wire does not pass through the sealing portion, the pressing force does not become uneven, and the mounting accuracy is improved. In addition, the thickness can be reduced because there is no getter member.
【００５８】[0058]
【発明の効果】本発明によれば、光電変換素子を上面内
面に有し制御電極を内部に有する上部外囲器が電子放出
源を有する陰極基板の上面側に封着され、下面側には下
部外囲器が封着されて両外囲器が連通している平面型撮
像装置において、上部外囲器を、陰極基板に封着材を介
して固着されるスペーサ部材と封止金属部と透光性基板
で構成した。そして、制御電極を、封止金属部を介して
通電されるように封止金属部とスペーサ部材の間に挟持
されるように配設した。さらに、上部外囲器と下部外囲
器が、陰極基板に封着される部分の外周形状が実質的に
同一であり、陰極基板に直交する方向から見て、その全
周にわたり少なくとも一部が重なり合うように陰極基板
を挟んで対面する位置において陰極基板に封着した。ま
たは、上部外囲器と下部外囲器の一方の陰極基板に対す
る封着部分が、他方の陰極基板に対する封着部分よりも
内側にあり、かつ両封着部分の間隔が周方向に沿って一
定の規則性を有するように、上部外囲器と下部外囲器が
陰極基板を挟んで対面する位置において陰極基板に封着
してもよい。According to the present invention, the upper envelope having the photoelectric conversion element on the inner surface of the upper surface and having the control electrode inside is sealed on the upper surface side of the cathode substrate having the electron emission source, and the lower surface side is sealed on the lower surface side. In a flat-type imaging device in which a lower envelope is sealed and both envelopes communicate with each other, the upper envelope is provided with a spacer member and a sealing metal portion fixed to a cathode substrate via a sealing material. It consisted of a translucent substrate. Then, the control electrode was disposed so as to be sandwiched between the sealing metal part and the spacer member so as to be energized through the sealing metal part. Furthermore, the outer shape of the upper envelope and the lower envelope is substantially the same in the outer shape of the portion sealed to the cathode substrate, and at least a part of the entire outer periphery is viewed from a direction orthogonal to the cathode substrate. It sealed to the cathode substrate in the position facing the cathode substrate so that it may overlap. Alternatively, the sealing portion for one cathode substrate of the upper envelope and the lower envelope is located inside the sealing portion for the other cathode substrate, and the interval between both sealing portions is constant along the circumferential direction. May be sealed to the cathode substrate at a position where the upper envelope and the lower envelope face each other across the cathode substrate so as to have the following regularity.
【００５９】このような本発明の構成によれば、従来の
問題点が解決され、撮像装置の特性に影響を及ぼす陰極
基板の変形や透光性基板の偏芯・傾きが防止され、平面
型撮像装置を歩留まり良く製造することができる。According to the configuration of the present invention, the conventional problems are solved, and the deformation of the cathode substrate and the eccentricity / inclination of the light-transmitting substrate which affect the characteristics of the image pickup device are prevented. The imaging device can be manufactured with high yield.
【図１】本発明の実施の形態である平面型撮像装置の第
１の例を示す断面図である。FIG. 1 is a cross-sectional view illustrating a first example of a planar imaging device according to an embodiment of the present invention.
【図２】第１及び第２の例において使用される軟質金属
を用いるシール材の加工形状を示す模式的断面図であ
る。FIG. 2 is a schematic cross-sectional view showing a processed shape of a sealing material using a soft metal used in the first and second examples.
【図３】第１及び第２の例において上部外囲器と下部外
囲器の各端面が陰極基板を挟んで対峙する位置関係を示
す模式的な部分断面図及び上面図である。FIGS. 3A and 3B are a schematic partial cross-sectional view and a top view showing a positional relationship in which end surfaces of an upper envelope and a lower envelope face each other across a cathode substrate in the first and second examples.
【図４】図１における（イ）−（イ）切断線における断
面図である。FIG. 4 is a cross-sectional view taken along a cutting line (a)-(a) in FIG.
【図５】本発明の実施の形態である平面型撮像装置の第
２の例を示す断面図である。FIG. 5 is a cross-sectional view illustrating a second example of the planar imaging device according to the embodiment of the present invention;
【図６】本発明の実施の形態である平面型撮像装置の第
３の例の構成及び製造工程を示す断面図である。FIG. 6 is a cross-sectional view illustrating a configuration and a manufacturing process of a third example of the flat-type imaging device according to the embodiment of the present invention;
【図７】（ａ）は従来の平面型撮像装置の基本構成を示
す模式的斜視図、（ｂ）は同断面図である。FIG. 7A is a schematic perspective view showing a basic configuration of a conventional flat-type imaging device, and FIG. 7B is a sectional view of the same.
【図８】（ａ）は従来の平面型表示装置の基本構成を示
す断面図、（ｂ）は（ａ）の部分拡大図である。8A is a cross-sectional view showing a basic configuration of a conventional flat display device, and FIG. 8B is a partially enlarged view of FIG.
１ 陰極基板 １ａ 貫通孔 ２ａ 電子放出部 ４ａ 冷陰極アレイ電極配線 ８ グリッド電極 １０ 光電変換ターゲット部 １１ 透光性基板 １２ 透明電極 １３ 光電変換膜 １５ 信号取り出しピン ３１ スペーサ部材 ３２ シール材（シールガラスなど） ３３ シール材（インジウムなどの軟質金属） ３４ シール材（インジウムなどの軟質金属）補強部 ５０ 下部外囲器 ５０ａ 下部外囲器基板 ５０ｂ 下部外囲器壁部 ５０ｃ ゲッタ保持基板 ５１ ゲッタ ５３ ゲッタ支持体を兼ねる通電端子 ５４ シールガラスなどのシール材料 ５５ 活性ゲッタ膜（ゲッタミラー） ５６ 排気口（封止部） ６０ 絶縁枠（絶縁ワニス） ７０ 上部外囲器３０端面と下部外囲器端面が重なる部
分DESCRIPTION OF SYMBOLS 1 Cathode substrate 1a Through hole 2a Electron emission part 4a Cold cathode array electrode wiring 8 Grid electrode 10 Photoelectric conversion target part 11 Translucent substrate 12 Transparent electrode 13 Photoelectric conversion film 15 Signal extraction pin 31 Spacer member 32 Sealing material (seal glass etc.) 33 sealing material (soft metal such as indium) 34 sealing material (soft metal such as indium) reinforcing portion 50 lower envelope 50a lower envelope substrate 50b lower envelope wall 50c getter holding substrate 51 getter 53 getter support Current-carrying terminal also serving as a body 54 Seal material such as seal glass 55 Active getter film (getter mirror) 56 Exhaust port (sealing portion) 60 Insulating frame (insulating varnish) 70 Portion where end surface of upper envelope 30 and end surface of lower envelope overlap
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山岸 敏郎 東京都世田谷区砧一丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 瀧口 吉郎 東京都世田谷区砧一丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 難波 正和 東京都世田谷区砧一丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 平田 義彦 千葉県茂原市大芝629 双葉電子工業株式 会社内 (72)発明者 横山 三喜男 千葉県茂原市大芝629 双葉電子工業株式 会社内 (72)発明者 田中 満 千葉県茂原市大芝629 双葉電子工業株式 会社内 (72)発明者 伊藤 茂生 千葉県茂原市大芝629 双葉電子工業株式 会社内 Ｆターム(参考） 4M118 AA08 AA10 AB01 CA14 CB05 DD01 HA11 HA20 HA24 5C012 AA03 BC03 5C024 AX01 CY14 CY47 CY48 EX02 JX01 5C037 AA01 AB08 AB23 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Toshiro Yamagishi 1-10-11 Kinuta, Setagaya-ku, Tokyo Inside Japan Broadcasting Corporation Research Institute (72) Inventor Yoshiro Takiguchi 1-10-11 Kinuta, Setagaya-ku, Tokyo No. Japan Broadcasting Corporation Broadcasting Research Institute (72) Inventor Masakazu Namba 1-10-11 Kinuta, Setagaya-ku, Tokyo Inside Japan Broadcasting Corporation Broadcasting Research Institute (72) Inventor Yoshihiko Hirata 629 Oshiba Futaba, Mobara City, Chiba Prefecture Inside the Electronics Industry Company (72) Inventor Mikio Yokoyama 629 Oshiba, Mobara-shi, Chiba Prefecture Inside the Futaba Electronics Industry Co., Ltd. Shigeo Ito 629 Oshiba, Mobara-shi, Chiba Futaba Electronics Co., Ltd. F-term (reference) 4M118 AA08 AA10 AB01 CA14 CB05 DD01 HA11 HA20 HA24 5C012 AA03 BC03 5C024 AX01 CY14 CY47 CY48 EX02 JX01 5C037 AA01 AB08 AB23
Claims (15)
出源を上面に有する陰極基板と、前記陰極基板の上面に
封着される上部外囲器と、前記陰極基板の下面に封着さ
れる下部外囲器とを有し、前記上部外囲器内面には外部
からの入射光を透過する透光性の電極と光電変換素子が
積層して配設され、前記光電変換素子と陰極基板との間
には制御電極が配設され、陰極基板には上部外囲器と下
部外囲器を連通する孔が形成され、下部外囲器内にはゲ
ッタ部材が配設された平面型撮像装置において、 前記上部外囲器は、前記陰極基板に封着材を介して固着
されるスペーサ部材と封止金属部と透光性基板から構成
され、前記制御電極は、前記封止金属部を介して通電さ
れるように前記封止金属部と前記スペーサ部材の間に挟
持されて配設され、前記上部外囲器と下部外囲器は、陰
極基板に封着される部分の外周形状が実質的に同一であ
り、陰極基板に直交する方向から見て、その全周にわた
り少なくとも一部が重なり合うように陰極基板を挟んで
対面する位置において陰極基板に封着されていることを
特徴とする平面型撮像装置。1. A cathode substrate having a plurality of electron emission sources arranged in a matrix on an upper surface, an upper envelope sealed on an upper surface of the cathode substrate, and an upper envelope sealed on a lower surface of the cathode substrate. A light-transmissive electrode that transmits incident light from the outside and a photoelectric conversion element are disposed in a stack on the inner surface of the upper envelope, and the photoelectric conversion element and the cathode substrate A control electrode is disposed between the lower substrate and the cathode substrate, and a hole is formed in the cathode substrate to communicate the upper and lower envelopes, and a getter member is disposed in the lower envelope. In the apparatus, the upper envelope includes a spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a light-transmitting substrate, and the control electrode includes the sealing metal portion. Disposed between the sealing metal portion and the spacer member so as to be energized through the The outer envelope and the lower envelope have substantially the same outer peripheral shape of a portion sealed to the cathode substrate, and at least partially overlap over the entire periphery as viewed from a direction orthogonal to the cathode substrate. A flat-type imaging device characterized by being sealed to a cathode substrate at a position facing the cathode substrate.
出源を上面に有する陰極基板と、前記陰極基板の上面に
封着される上部外囲器と、前記陰極基板の下面に封着さ
れる下部外囲器とを有し、前記上部外囲器内面には外部
からの入射光を透過する透光性の電極と光電変換素子が
積層して配設され、前記光電変換素子と陰極基板との間
には制御電極が配設され、陰極基板には上部外囲器と下
部外囲器を連通する孔が形成され、下部外囲器内にはゲ
ッタ部材が配設された平面型撮像装置において、 前記上部外囲器は、前記陰極基板に封着材を介して固着
されるスペーサ部材と封止金属部と透光性基板から構成
され、前記制御電極は、前記封止金属部を介して通電さ
れるように前記封止金属部と前記スペーサ部材の間に挟
持されて配設され、 陰極基板に直交する方向から見て、前記上部外囲器と下
部外囲器の一方の陰極基板に対する封着部分が、他方の
陰極基板に対する封着部分よりも内側にあり、かつ両封
着部分の間隔が周方向に沿って一定の規則性を有するよ
うに、前記上部外囲器と下部外囲器が陰極基板を挟んで
対面する位置において陰極基板に封着されていることを
特徴とする平面型撮像装置。2. A cathode substrate having a plurality of electron emission sources arranged in a matrix on an upper surface, an upper envelope sealed on an upper surface of the cathode substrate, and an upper envelope sealed on a lower surface of the cathode substrate. A light-transmissive electrode that transmits incident light from the outside and a photoelectric conversion element are disposed in a stack on the inner surface of the upper envelope, and the photoelectric conversion element and the cathode substrate A control electrode is disposed between the lower substrate and the cathode substrate, and a hole is formed in the cathode substrate to communicate the upper and lower envelopes, and a getter member is disposed in the lower envelope. In the apparatus, the upper envelope includes a spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a light-transmitting substrate, and the control electrode includes the sealing metal portion. A cathode disposed between the sealing metal portion and the spacer member so as to be energized through the cathode; When viewed from a direction perpendicular to the plate, the sealing portion for one of the upper and lower envelopes with respect to the cathode substrate is located inside the sealing portion for the other cathode substrate, and the sealing portions for both the sealing portions A plane characterized in that the upper envelope and the lower envelope are sealed to the cathode substrate at positions facing each other across the cathode substrate so that the interval has a constant regularity along the circumferential direction. Type imaging device.
配線が形成され、前記陰極基板の前記スペーサ部材の周
囲において前記配線上には絶縁枠が配設され、前記封止
金属部と配線が短絡しないように構成したことを特徴と
する請求項１又は２記載の平面型撮像装置。3. The cathode substrate is provided with a wiring for supplying a current to the cathode, an insulating frame is provided on the wiring around the spacer member of the cathode substrate, and the sealing metal part and the wiring are provided. The flat-type imaging device according to claim 1, wherein the device is configured not to short-circuit.
される側が開口した箱状部材で形成され、封着材を介し
て前記陰極基板に固着されることを特徴とする請求項１
又は２記載の平面型撮像装置。4. The lower envelope is formed of a box-like member having an open side sealed to the cathode substrate, and is fixed to the cathode substrate via a sealing material. 1
Or the planar imaging device according to 2.
材を介して固着される絶縁性のスペーサ部材と封止金属
部と基板から構成されたことを特徴とする請求項１又は
２記載の平面型撮像装置。5. The device according to claim 1, wherein the lower envelope comprises an insulating spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a substrate. 2. The planar imaging device according to 2.
の封止を行う為の補強枠が配設されたことを特徴とする
請求項１又は５記載の平面型撮像装置。6. The flat-type imaging device according to claim 1, wherein a reinforcing frame for performing sealing under uniform pressure is provided on an outer periphery of the sealing metal portion.
りゲッタ膜が形成されるもので、通電する為のリード線
が下部外囲器と陰極基板の封着部分から左右ほぼ均等の
位置になるように導出されたことを特徴とする請求項１
又は２記載の平面型撮像装置。7. The getter member has a getter film formed by heating and energizing so that a lead wire for energizing is located at a substantially equal position on the left and right from the sealing portion between the lower envelope and the cathode substrate. 2. The method according to claim 1, wherein:
Or the planar imaging device according to 2.
の間に係合する段差を有することを特徴とする請求項１
又は２又は５記載の平面型撮像装置。8. The semiconductor device according to claim 1, wherein the sealing metal portion has a step that engages between the spacer member and the substrate.
Or the planar imaging device according to 2 or 5.
材は、通電または支持する為のリード線が、前記陰極基
板と下部外囲器の封着部分を貫通して外部に導出された
ことを特徴とする請求項１又は２記載の平面型表示装
置。9. A getter member disposed in the lower envelope, wherein a lead wire for energizing or supporting is passed through a sealing portion between the cathode substrate and the lower envelope and led out to the outside. The flat display device according to claim 1 or 2, wherein:
部材は、通電または支持する為のリード線が、基板を貫
通して外部に導出されたことを特徴とする請求項５記載
の平面型表示装置。10. The getter member disposed in the lower envelope, wherein a lead wire for energizing or supporting the lead is passed through the substrate and led out. Flat panel display.
放出源を上面に有する陰極基板と、前記陰極基板の上面
に封着される上部外囲器と、前記陰極基板の下面に封着
される下部外囲器とを有し、前記上部外囲器の内面には
外部からの入射光を透過する透光性の電極と光電変換素
子が積層して配設され、前記光電変換素子と陰極基板と
の間には制御電極が配設され、陰極基板には上部外囲器
と下部外囲器を連通する孔が形成され、下部外囲器内に
はゲッタ部材が配設され、前記上記外囲器は、前記陰極
基板に封着材を介して固着されるスペーサ部材と封止金
属部と透光性基板から構成された平面型撮像装置を製造
する為の製造方法であって、 陰極基板に電子放出源を形成する工程と、上部外囲器の
透光性基板に透光性の電極および光電変換素子を構成す
る工程と、陰極基板に上部外囲器のスペーサ部材を固着
する工程と、陰極基板に下部外囲器を固着する工程と、
透光性基板とスペーサ部材の間に封止金属部を介在させ
た状態で陰極基板及び下部外囲器の少なくとも一方と透
光性基板とを相手方に向けて相対的に押圧することによ
り上部外囲器を封止することを特徴とする平面型製造装
置の製造方法。11. A cathode substrate having a plurality of electron emission sources arranged in a matrix on an upper surface, an upper envelope sealed to an upper surface of the cathode substrate, and an upper envelope sealed to a lower surface of the cathode substrate. A light-transmissive electrode that transmits incident light from the outside and a photoelectric conversion element are disposed on the inner surface of the upper envelope, and the photoelectric conversion element and the cathode A control electrode is disposed between the substrate and the substrate, a hole communicating with the upper envelope and the lower envelope is formed in the cathode substrate, and a getter member is disposed in the lower envelope. The envelope is a manufacturing method for manufacturing a flat-type imaging device including a spacer member fixed to the cathode substrate via a sealing material, a sealing metal portion, and a light-transmitting substrate, A step of forming an electron emission source on a substrate; and a step of forming a light-transmitting electrode and a photoelectric conversion element on a light-transmitting substrate of an upper envelope. A step of constituting a step of fixing the upper envelope of the spacer members to the cathode substrate, a step of fixing the lower envelope to the cathode substrate,
With the sealing metal part interposed between the light-transmitting substrate and the spacer member, at least one of the cathode substrate and the lower envelope and the light-transmitting substrate are relatively pressed against each other, thereby forming A method for manufacturing a flat-type manufacturing apparatus, comprising sealing an envelope.
放出源を上面に有する陰極基板と、前記陰極基板の上面
に封着される上部外囲器と、前記陰極基板の下面に封着
される下部外囲器とを有し、前記上部外囲器の内面には
外部からの入射光を透過する透光性の電極と光電変換素
子が積層して配設され、前記光電変換素子と陰極基板と
の間には制御電極が配設され、陰極基板には上部外囲器
と下部外囲器を連通する孔が形成され、下部外囲器内に
はゲッタ部材が配設され、前記上部外囲器は、前記陰極
基板に封着材を介して固着されるスペーサ部材と、封止
金属部と、透光性基板とから構成され、前記下部外囲器
は、前記陰極基板に封着材を介して固着される絶縁性の
スペーサ部材と封止金属部と基板から構成された平面型
撮像装置を製造する為の製造方法であって、 陰極基板に電子放出源を形成する工程と、上部外囲器の
透光性基板に透光性の電極および光電変換素子を構成す
る工程と、陰極基板に上部外囲器のスペーサ部材を固着
する工程と、陰極基板に下部外囲器のスペーサ部材を固
着する工程と、上部外囲器の透光性基板と上部外囲器の
スペーサ部材の間及び下部外囲器の基板と下部外囲器の
スペーサ部材の間にそれぞれ封止金属部を介在させた状
態で上部外囲器の透光性基板と下部外囲器の基板を相手
方に向けて相対的に押圧することにより上部外囲器と下
部外囲器を封止することを特徴とする平面型製造装置の
製造方法。12. A cathode substrate having a plurality of electron-emitting sources arranged in a matrix on an upper surface, an upper envelope sealed to an upper surface of the cathode substrate, and an upper envelope sealed to a lower surface of the cathode substrate. A light-transmissive electrode that transmits incident light from the outside and a photoelectric conversion element are disposed on the inner surface of the upper envelope, and the photoelectric conversion element and the cathode A control electrode is disposed between the substrate and the substrate, a hole communicating with the upper envelope and the lower envelope is formed in the cathode substrate, and a getter member is disposed in the lower envelope. The envelope is composed of a spacer member fixed to the cathode substrate via a sealing material, a sealing metal part, and a translucent substrate, and the lower envelope is sealed to the cathode substrate. Manufactures a flat-type imaging device composed of an insulating spacer member fixed via a material, a sealing metal part, and a substrate Forming an electron emission source on the cathode substrate, forming a light-transmitting electrode and a photoelectric conversion element on the light-transmitting substrate of the upper envelope, Fixing the spacer member of the envelope, fixing the spacer member of the lower envelope to the cathode substrate, and interposing the lower envelope between the light-transmitting substrate of the upper envelope and the spacer member of the upper envelope. The light-transmitting substrate of the upper envelope and the substrate of the lower envelope are relatively pressed toward each other with the sealing metal part interposed between the substrate of the container and the spacer member of the lower envelope. And sealing the upper envelope and the lower envelope by performing the method.
装置の製造方法において、高真空雰囲気中において上部
外囲器と下部外囲器を封止する工程を有し、上部外囲器
と下部外囲器が高真空状態に保持されることを特徴とす
る平面型撮像装置の製造方法。13. The method for manufacturing a flat-type imaging device according to claim 11, further comprising a step of sealing the upper envelope and the lower envelope in a high vacuum atmosphere. A method for manufacturing a planar imaging device, wherein an envelope is maintained in a high vacuum state.
置の製造方法であって、あらかじめ下部外囲器に排気孔
を形成する工程と、上部外囲器を陰極基板に封着した
後、上部外囲器と下部外囲器の内部を排気して前記排気
孔を封止する工程を有することを特徴とする平面型撮像
装置の製造方法。14. The method of manufacturing a flat-type imaging device according to claim 11, wherein an exhaust hole is previously formed in the lower envelope, and after the upper envelope is sealed to the cathode substrate, A method for manufacturing a flat-type imaging device, comprising a step of evacuating the inside of an upper envelope and a lower envelope to seal the exhaust hole.
装置の製造方法であって、高真空雰囲気中において、上
部外囲器が封着された陰極基板の下部外囲器が封止され
る側にゲッタ部材により膜を形成する工程と、前記ゲッ
タ部材を取り除いて下部外囲器を封止する工程が行なわ
れることを特徴する平面型撮像装置の製造方法。15. The method according to claim 11, wherein the lower envelope of the cathode substrate with the upper envelope sealed is sealed in a high vacuum atmosphere. Forming a film on the side with a getter member, and removing the getter member to seal a lower envelope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001070797A JP4744707B2 (en) | 2001-03-13 | 2001-03-13 | Planar imaging apparatus and method of manufacturing planar imaging apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001070797A JP4744707B2 (en) | 2001-03-13 | 2001-03-13 | Planar imaging apparatus and method of manufacturing planar imaging apparatus |
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| Publication Number | Publication Date |
|---|---|
| JP2002270122A true JP2002270122A (en) | 2002-09-20 |
| JP4744707B2 JP4744707B2 (en) | 2011-08-10 |
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ID=18928599
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001070797A Expired - Fee Related JP4744707B2 (en) | 2001-03-13 | 2001-03-13 | Planar imaging apparatus and method of manufacturing planar imaging apparatus |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6930327B2 (en) * | 2002-06-24 | 2005-08-16 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method of manufacturing the same |
| JP2006064696A (en) * | 2004-08-24 | 2006-03-09 | Ulis | Electromagnetic radiation, especially element for detecting infrared ray, infrared optical image unit including element, and process for performing it |
| JP2007128733A (en) * | 2005-11-02 | 2007-05-24 | Rohm Co Ltd | Electronic device and display device with sensor utilizing same |
| JP2008097971A (en) * | 2006-10-11 | 2008-04-24 | Mt Picture Display Co Ltd | Imaging device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000048743A (en) * | 1998-05-26 | 2000-02-18 | Futaba Corp | Plane image pick-up device, and its manufacture |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3136415B2 (en) * | 1991-06-10 | 2001-02-19 | キヤノン株式会社 | Method of manufacturing image display device |
| JPH08106869A (en) * | 1994-10-03 | 1996-04-23 | Hitachi Ltd | Image element and operating method thereof |
-
2001
- 2001-03-13 JP JP2001070797A patent/JP4744707B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000048743A (en) * | 1998-05-26 | 2000-02-18 | Futaba Corp | Plane image pick-up device, and its manufacture |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6930327B2 (en) * | 2002-06-24 | 2005-08-16 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method of manufacturing the same |
| JP2006064696A (en) * | 2004-08-24 | 2006-03-09 | Ulis | Electromagnetic radiation, especially element for detecting infrared ray, infrared optical image unit including element, and process for performing it |
| JP2007128733A (en) * | 2005-11-02 | 2007-05-24 | Rohm Co Ltd | Electronic device and display device with sensor utilizing same |
| JP2008097971A (en) * | 2006-10-11 | 2008-04-24 | Mt Picture Display Co Ltd | Imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4744707B2 (en) | 2011-08-10 |
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