JP2002265207A - Method for manufacturing multilayered fullerene by abrasion - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing multilayered fullerene with a high yield and by a comparatively easy method. SOLUTION: The method for manufacturing multilayered fullerene includes a step to carry out abrasion by irradiating a composite material containing a fullerene compound as a target 10 with laser 30 and to make the product accumulate on a substrate 20.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for producing a multi-layer fullerene compound in which two or three carbocyclic compounds have a nested structure.

[0002]

BACKGROUND ART Multi-layered fullerene compounds having a structure in which two or three carbocyclic compounds are nested include:
The applicant has already applied for a patent (Japanese Patent Application No. 11-34270)
5, filing date: December 2, 1999).

In this patent application, C₆₀Fullerene
Heat treatment of carbon-containing material at a temperature of 2300 ° C or higher in the presence of
By doing so, the following multilayer fullerenes can be produced
It is described that can be. [1] C₂₄₀C in fullerene₆₀Nest fullerenes
Fullerene (hereinafter referred to as “first fullerene”
"). [2] C₅₆₀C in fullerene₂₄₀Nest fullerenes
Fullerene (hereinafter referred to as “second fullerene”
"). [3] C₅₆₀C in fullerene₂₄₀Nest fullerenes
And this C ₂₄₀C in fullerene₈₀Hula
-Layer fullerenes with nesting
"3rd fullerene").

At present, the above methods have low yields,
It is only isolated and purified on a laboratory scale.

[0005]

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for producing the above-mentioned novel fullerene in a high yield with a relatively easy method.

[0006]

The manufacturing method according to the present invention includes a step of performing ablation by irradiating a laser on a composite material containing a fullerene compound as a target to accumulate products on a substrate. According to the present invention, multilayer fullerenes can be obtained with high yield.

[0007] The multilayer fullerene obtained by the present invention retains the characteristics (gas storage characteristics, superconducting characteristics, magnetic characteristics, photoelectric effect, rectifying characteristics, photosensitive characteristics, lubricating characteristics, catalytic action, physiological activity, etc.) of fullerene compounds. In addition to that, it is expected that the hydrogen storage characteristics are particularly excellent.

[0008]

FIG. 1 shows an embodiment of a manufacturing method according to the present invention.

In the manufacturing method of the present embodiment, the target 10 and the substrate 20 are set in, for example, opposed positions in the reaction chamber. The reaction chamber has an inert gas atmosphere, and the pressure in the reaction chamber is preferably 20 Torr or less. Helium gas, argon gas, or the like is used as the inert gas.

The target 10 is a composite material of a fullerene compound as a carbon source and a binder. Composites can be used C ₆₀ fullerene as the fullerene compound. The content of C ₆₀ fullerene is preferably 10 wt% or more, more preferably 30 wt% or more. The content of C ₆₀ fullerene is less than 10 wt%, there may not be obtained multilayered fullerenes of interest. The fullerene compound includes, in addition to C ₆₀ fullerene, C ₇₀ , C ₈₀ , C ₉₀ ,
Fullerenes such as C ₁₂₀ , C ₂₄₀ and C ₅₄₀ can be used.

The binder is not particularly limited as long as it can bind the fullerene compound, and carbon materials, polymers, metals and ceramics can be used.

[0012] Examples of the carbon material as the binder include carbon nanotubes, carbon nanofibers, graphite, and carbon black.

The polymer is polyphenylenevinylene (P
PV), polymethyl acrylate (PMA), polymethyl methacrylate (PMMA) and polyphenylene oxide (PPO).

Examples of the metal include cobalt, nickel, aluminum, lanthanum and bismuth.

Examples of the ceramic include alumina, alumina silica, magnesia and nickel oxide.

The substrate 20 is for accumulating products, and its material is not particularly limited. As a material of the substrate 20, a carbon compound, quartz, silica, stainless steel, or the like can be used.

When the laser 30 is directed toward the target 10, the surface of the composite containing the fullerene compound is ablated, thereby producing a gas phase 40 containing fragments of fullerene. The product is the substrate 2
0 to form a thin film 50. The product integrated on the substrate 20 includes the multi-layer fullerene.

The laser to be irradiated in the present invention may be a pulse laser, for example, a KrF excimer laser or an ArF excimer laser. The laser has a wavelength of 193 to 248 nm, a frequency of 1 to 20 Hz,
Those having characteristics such as an output of 1 to 30 J / cm ² can be used.

[0019]

EXAMPLES Examples of the present invention will be described below, but the present invention is not limited to these examples. In the following examples, the reaction chamber was in a helium gas atmosphere, and the pressure was 1 Torr.

[Embodiment 1] The substrate was 4
It was installed at a position separated by 0 mm. Target is a C ₆₀ fullerene and 10% by weight of the binder of 90 wt% PP
V (polyphenylene vinylene). A KrF excimer laser (248 nm, 5
Hz, 1 J / cm ² ). The product was collected on a stainless steel substrate heated to 300 ° C. TEM of thin film formed on substrate
(Transmission Electron Mi
from Croscopy) photograph, arrangement of the thin film, a first fullerene 15%, and 4% in the third fullerene, and the rest was confirmed to be C ₆₀ fullerene and amorphous carbon unreacted.

[Embodiment 2] The substrate was 4
It was installed at a position separated by 0 mm. Target consisted of cobalt metal containing 10% by weight of C ₆₀ fullerene. The target was irradiated with a KrF excimer laser (248 nm, 5 Hz, 1 J / cm ² ) and ablated. The product was integrated on a graphite substrate. From TEM photograph of the thin film produced on a substrate, the configuration of the thin film, and 5% of the second fullerene, and a third fullerene 17%, and the rest was confirmed and C ₆₀ fullerene unreacted that the graphite carbon .

[Embodiment 3] The substrate is 4
It was installed at a position separated by 0 mm. Target consisted of alumina ceramics containing 40% by weight of C ₆₀ fullerene. The target was irradiated with a KrF excimer laser (248 nm, 5 Hz, 0.8 J / cm ² ) and ablated. The product was integrated on a graphite substrate. From the TEM photograph of the thin film formed on the substrate, the composition of the thin film was 25% of the first fullerene,
And% of the second fullerene, and the rest was confirmed and C ₆₀ fullerene unreacted that the graphite carbon.

[Embodiment 4] The substrate was 7
It was installed at a position separated by 0 mm. Target consisted of 60 wt% of the carbon nanotube is a binder and 40 wt% of C ₆₀ fullerene. The target is Kr
F excimer laser (248 nm, 5 Hz, 0.8 J /
cm ²⁾ was irradiated. The product was accumulated on a quartz glass substrate heated to 300 ° C. FIG. 2 shows a TEM photograph of the thin film formed on the substrate. Configuration of a thin film from the TEM photograph, confirmed and 20% first fullerene, and a second fullerene 8%, and 5% third fullerene, rest and C ₆₀ fullerene unreacted that the amorphous carbon did.

[Embodiment 5] The substrate was 5
It was installed at a position separated by 0 mm. Target consisted of 50 wt% of the carbon nanotube is a binder and 50 wt% of C ₆₀ fullerene. This target includes:
KrF excimer laser (248 nm, 5 Hz, 0.8
J / cm ² ) and was ablated. The product was collected on a stainless steel substrate. FIG. 3 shows a TEM photograph of the thin film formed on the substrate. Configuration of a thin film from the TEM photograph, confirmed 25% of the first fullerene, and 12% of the first fullerene, and 5% third fullerene, rest and C ₆₀ fullerene unreacted that the amorphous carbon did.

[Brief description of the drawings]

FIG. 1 is a diagram schematically showing an embodiment of the present invention.

FIG. 2 is a TEM photograph of a thin film integrated on a substrate in Example 4 of the present invention.

FIG. 3 is a TEM photograph of a thin film integrated on a substrate in Example 5 of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Target 20 Substrate 30 Laser 40 Gas phase containing fragment of fullerene 50 Thin film

Continuation of the front page (72) Inventor Yasumasa Takeuchi 3-2-1 Sakado, Takatsu-ku, Kawasaki-shi, Kanagawa F-term in the International Fundamental Materials Research Institute, Inc. (reference) 4G046 CB03 CC06 4G075 AA22 AA24 BC02 CA36 CA62 CA65 DA01 EB01 EB31 FB03 4K029 BA34 BB02 BC00 CA01 DB20

Claims (4)

[Claims] 1. A method for producing a multi-layer fullerene, comprising a step of performing ablation by irradiating a laser beam on a composite material containing a fullerene compound to accumulate products on a substrate. 2. The method according to claim 1, wherein the ablation is performed in an inert gas atmosphere. 3. The method for producing a multilayer fullerene according to claim 1, wherein the composite material has a C ₆₀ fullerene content of 10% by weight or more. 4. The method for producing a multi-layer fullerene according to claim 1, wherein the binder of the composite material is at least one selected from a carbon material, a polymer, a metal, and a ceramic.