JP2002264089A - Micro-actuator and its manufacturing method, and ink-jet head and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce the thickness dispersion of a vibrating plate, reduce cost and improve reliability. SOLUTION: In the method of manufacturing this micro-actuator with the vibrating plate as a movable part, the vibrating plate is formed by forming a layer with a light element previously implanted in a silicon substrate, and after jointing the layer with the light element implanted in the silicon substrate, to a base substrate, heat treatment is applied to separate and transfer the layer with the light element implanted, to the base substrate to provide the micro- actuator with little thickness dispersion of the vibrating plate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microactuator and a method for manufacturing the same, and an ink jet head and a method for manufacturing the same.

[0002]

2. Description of the Related Art As an ink jet head used in an image recording apparatus such as a printer, a facsimile, and a copying apparatus or an ink jet recording apparatus used as an image forming apparatus, a nozzle for discharging ink droplets and a discharge chamber (ink flow) communicating with the nozzle are used. Channel, ink chamber, pressure chamber, liquid chamber,
Also referred to as a pressurized chamber, a pressurized liquid chamber, and the like. ), A vibrating plate forming the wall surface of the discharge chamber, and a driving unit (a piezoelectric element or an electrode facing the vibrating plate) for deforming and displacing the vibrating plate. 2. Description of the Related Art An inkjet head that ejects ink droplets from nozzles by changing the pressure / volume in a room is known.

In such an ink jet head, a microactuator is constituted by a diaphragm serving as a movable portion and a driving means for driving the diaphragm. The microactuator having a diaphragm as a movable part is used for a micropump, a microswitch (microrelay), a multi-optical lens actuator (micromirror), a micro flowmeter, a pressure sensor, and the like in addition to the above-described inkjet head. However, the following mainly describes the inkjet head.

In an ink jet head having a microactuator having a vibrating plate as a movable portion, particularly in an electrostatic ink jet head having a vibrating plate and a counter electrode, the mechanical displacement characteristics of the vibrating plate are large in the ink droplet ejection characteristics. Therefore, it is necessary to make the diaphragm thinner and more precise.

For this reason, in a conventional ink jet head, a high-concentration boron diffusion layer having a thickness of a vibration plate is formed on a silicon substrate as described in, for example, Japanese Patent Application Laid-Open No. 6-71882. A diaphragm made of a high-concentration boron diffusion layer is formed by anisotropically etching a silicon substrate using an etch stop technique in which the diffusion layer serves as an etching stop layer.

Further, as described in Japanese Patent Application Laid-Open No. 9-216360, a first silicon substrate having a crystal plane orientation (111) and a second silicon substrate having a crystal plane orientation (110) are bonded to each other to form a bonding substrate. Is formed, and (11)
1) Polishing from the surface side to reduce the thickness of the diaphragm,
Further, the diaphragm is manufactured from the first silicon substrate by etching from the (110) plane side and performing etch stop on the (111) plane.

[0007]

However, when a diaphragm is formed using the above-described boron diffusion layer as an etch stop, there are the following problems. That is, the thickness accuracy (variation) of the diaphragm is limited to about ± 10%. The etched silicon substrate is wasted, and in particular, in the lost wafer method in which only the diaphragm is left, most of the silicon other than the diaphragm is etched, so that most of the silicon is removed and wasted. Due to the high concentration of boron, many crystal defects occur on the substrate, which has a bad influence on long-term reliability. Due to the high doping of boron, a strong stress is generated in the diaphragm, which hinders the vibration (displacement) characteristics.
It is susceptible to variations in boron doping conditions and etching conditions, and it takes time and effort to control during manufacturing.

[0008] Further, when a diaphragm is manufactured from a substrate on which two silicon wafers are bonded, there are the following problems. That is, the thickness accuracy (variation) of the diaphragm is ±
There is a limit of about 15%. Since it depends on the polishing accuracy and the original substrate thickness, the accuracy is further reduced as compared with the case where the boron diffusion layer is used. Most silicon substrates are wasted to polish to the thickness of the diaphragm. Fine cracks or polishing powder is generated on the substrate during the polishing process, which causes breakage of the diaphragm or pinholes during etching in the subsequent process.

The present invention has been made in view of the above problems, and has as its object to provide a microactuator having a small variation in diaphragm thickness, a method of manufacturing the same, and an ink jet head and a method of manufacturing the same.

[0010]

In order to solve the above-mentioned problems, a microactuator according to the present invention has a configuration in which a diaphragm is formed of a layer obtained by implanting a light element into a silicon substrate. Here, it is preferable to have an electrode facing the diaphragm and deform the diaphragm by electrostatic force.

A method for manufacturing a microactuator according to the present invention is a method for manufacturing a microactuator according to the present invention, wherein a layer in which a light element is implanted in advance on a silicon substrate is formed, and the light element of the silicon substrate is formed. Is bonded to the base substrate, and then a heat treatment is applied to peel off and transfer the light-element-implanted layer to the base substrate.

An ink jet head according to the present invention comprises a nozzle for discharging ink droplets, a discharge chamber communicating with the nozzle, a diaphragm forming a wall surface of the discharge chamber, and a driving means for deforming the diaphragm. The vibration plate has a structure in which a light element is implanted into a silicon substrate.

Here, the driving means is preferably an electrode facing the diaphragm. Further, the diaphragm is bonded to a base substrate, and the base substrate is preferably made of a silicon substrate. Alternatively, the diaphragm is bonded to a base substrate, and the base substrate is preferably made of a glass substrate.

A method of manufacturing an ink jet head according to the present invention is a method of manufacturing an ink jet head according to the present invention, wherein a layer in which a light element is implanted in advance on a first silicon substrate is formed. After bonding the light-element-implanted layer of the substrate to the second silicon substrate, heat treatment is applied to peel and transfer the light-element-implanted layer to the second silicon substrate. And a discharge chamber is formed.

[0015]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 is a sectional explanatory view of a microactuator to which the present invention is applied. In this microactuator, a diaphragm 1 as a movable portion is formed from a layer (hereinafter referred to as “implanted layer”) 2 in which light elements such as hydrogen ions are implanted into a silicon substrate.
Is bonded to a base substrate 3 made of a silicon substrate on which an insulating layer such as a thermal oxide film is formed or an insulating substrate such as Pyrex (registered trademark) glass. An electrode forming groove 4 is formed, and an electrode 5 facing the diaphragm 1 is provided on the bottom surface of the concave portion 4.

When this micro-actuator is used as an electrostatic actuator, the surface of the electrode 5 becomes positive by applying a pulse potential of 0 V to 35 V between the vibration number 1 and the electrode 5 by a drive circuit, for example. When charged, the lower surface of the corresponding diaphragm 1 is charged to a negative potential, so that the diaphragm 1 is deformed toward the electrode 5 by electrostatic force, and when the application of the pulse potential to the electrode 5 is turned off, the electrode 5
The diaphragm 1 is restored with the discharge of the electric charges accumulated on the surface of the diaphragm 1. By using the motion of the diaphragm 1 as a drive source, it can function as an actuator.

When the microactuator is used as a capacitive pressure sensor, a configuration is used in which an external force to be measured is applied to the diaphragm 1 to measure a change in electric capacitance between the diaphragm 1 and the electrode 5. By doing so, it is possible to measure the amount of deformation of diaphragm 1, that is, the external force that caused the deformation.

The diaphragm can be driven by an electromechanical transducer such as a piezoelectric element instead of the electrode, or the diaphragm can be driven by using a drive means such as a shape memory alloy or bimetal. .

Since the diaphragm 1 is formed by the implantation layer 2 in which light elements such as hydrogen ions are implanted in the silicon substrate, the thickness accuracy of the diaphragm 1 depends only on the implantation accuracy of the light elements. The variation is extremely small, so that a stable actuating operation or measurement operation can be performed, and the variation in operation or measurement between channels is also reduced.

A method of manufacturing the microactuator according to the present invention will be described with reference to FIG. First, using a silicon substrate 11 which is a silicon wafer as shown in FIG. 1A, light element ions such as hydrogen ions are placed at predetermined positions (depth direction) of the silicon substrate 11 as shown in FIG. Is implanted by an ion implantation method to form an implantation defect layer (implantation layer) 12 to obtain the diaphragm substrate 10.

Here, the implantation depth can be controlled by the ion acceleration energy, that is, the ion implantation energy. In general, a defect layer is provided at a uniform depth (constant diaphragm thickness) over the entire surface of a silicon wafer, but the implantation depth is changed in multiple steps in the depth direction using an implantation mask layer. Thus, the thickness of the diaphragm can be distributed.

Although the dose depends on the annealing temperature for peeling in a later step, it is generally 5 × 10E15 to 1 × 10E15
0E19 cm ^-2 was preferred. Driving depth is 1
In the case of μm, it was about 80 to 180 KeV. These conditions are to appropriately change the combination and the range of numerical values according to the variation of the desired diaphragm thickness, and are not particularly limited to the above ranges.

On the other hand, as shown in FIG. 1C, an oxide film 13 is formed on a silicon substrate 13 serving as a base substrate by a thermal oxidation method or the like.
a, a concave portion 4 is formed in the oxide film 13a, and an electrode 5 is provided on the bottom surface of the concave portion 4. Note that an insulating protective film 7 is formed on the surface of the electrode 5 to prevent an electrical short circuit with the diaphragm 1.

Then, the diaphragm substrate 10 is pre-joined on the silicon substrate 13. That is, after performing the -OH group addition process on the surfaces of the substrates 10 and 13 having smooth surfaces close to each other, the substrates 10 and 13 are brought into contact with each other.
A hydrogen bond is generated between the H groups, and pre-joining can be realized.

Further, annealing at 400 to 600 ° C. is performed in this state. As a result, the microcavities existing in the implantation defect layer 12 formed by the implantation grow and expand, and cracks and separation occur in the diaphragm substrate 10. The separation point at this time substantially coincides with the peak point of the hydrogen ion distribution. At this stage, the implantation defect layer 12, which is a thin layer of silicon, from the diaphragm substrate 13 is peeled off and transferred to the silicon substrate 13 serving as the base substrate to form the implantation layer 2.

More specifically, when hydrogen ions are implanted through a 400 nm-thick oxide mask layer at a dose of 8 × 10E16 and an acceleration voltage of 150 KeV, a distribution peak appears at about 1.3 μm. When annealed and separated into a thin-layer diaphragm, the center value of the thickness was about 1.25 μm and the tolerance was 5 nm at 3σ.

Then, by annealing at a high temperature of 1000 ° C. or more, as shown in FIG.
Is firmly bonded to the silicon substrate 13 as the base substrate to complete the microactuator.

In a thin-layer diaphragm formed by implanting a light element into a silicon substrate as described above, a diaphragm formed by polishing a conventional silicon substrate by etching stop by a boron diffusion layer or polishing the bonded silicon substrate is as follows. There are significant advantages. That is, since the accuracy of the vibration plate thickness depends only on the accuracy of hydrogen ion implantation, the variation is very small, and ± several% to 0.1% even in mass production. It can be maintained at a few percent. The remaining silicon substrate peeled / transferred from the thin-layer vibration plate (implanted layer) is lightly polished to a mirror surface,
If hydrogen ions are implanted again, it can be reused as a substrate for a diaphragm, and waste of the silicon substrate does not occur. Since boron is not doped, no crystal defects occur on the substrate.
Similarly, no stress is generated in the diaphragm because boron is not doped. There are few variation factors and management is easy. There is no occurrence of a defect of the diaphragm accompanying polishing.

Next, a case where a glass substrate such as Pyrex glass is used as a base substrate will be described with reference to FIG. First, steps up to the production of the diaphragm substrate 10 are the same as those in the case where the silicon substrate is used as a base substrate. On the other hand, a concave portion 4 is formed in a Pyrex glass substrate 23 serving as a base substrate, and an electrode 5 is provided on the bottom surface of the concave portion 4. It is the same to form an insulating protective film 7 on the surface of the electrode 5 for preventing an electrical short-circuit with the diaphragm 1 or the like.

Then, as shown in FIG. 1C, the Pyrex glass substrate 23 serving as a base substrate and the diaphragm substrate 10 are bonded by anodic bonding. That is, the diaphragm substrate 10 is brought into contact with the Pyrex glass substrate 23,
In a heating atmosphere at 50 ° C. to 400 ° C., the vibration
When the electric field of about 200 V to about 500 V is applied by setting the side to the + potential and setting the Pyrex glass substrate 23 side to the − potential,
The movable ions in the Pyrex glass substrate 23 move, and a large electrostatic pressure is applied between the substrates 10 and 23. Further, the oxygen ions in the glass move in the + direction, that is, toward the side of the diaphragm substrate 10 and bond with Si, whereby the bonding of the two substrates 10 and 23 is completed.

The glass material is not particularly limited to Pyrex glass as long as it has a small difference in thermal expansion coefficient from silicon, has a certain withstand voltage, and has mobile ions. Also, in the case of bonding silicon, anodic bonding can be achieved by interposing a thin film having the same function as Pyrex glass between the two substrates.

After that, 4
By performing the annealing at 00 to 600 ° C., cracks and separation occur in the diaphragm substrate 10 as described above, and the implantation defect layer 12 which is a thin layer of silicon is separated and transferred to the Pyrex glass substrate 23 side, As shown in FIG. 3D, the implanted layer 2 forming the diaphragm 1 is joined to the Pyrex glass substrate 23.

Next, the ink jet head according to the present invention will be described with reference to FIG. 4 is an exploded perspective view of the electrostatic inkjet head according to the present invention, FIG. 5 is a top view showing a nozzle plate of the head in a transparent state,
FIG. 6 is a schematic cross-sectional explanatory view of the head along the diaphragm longitudinal direction, and FIG. 7 is a schematic cross-sectional explanatory view of the head along the diaphragm short direction.

This ink jet head is provided with a flow path substrate 4
1, a diaphragm 42 provided on the lower surface of the flow path substrate 41,
An electrode substrate 43 provided below the diaphragm 42;
1 is a laminated structure in which a nozzle plate 44 provided on the upper side of the nozzle 1 is overlapped and joined, and a plurality of nozzles 45, a discharge chamber 46 which is an ink flow path communicating with each nozzle 45, and a fluid resistance A common ink chamber 48 and the like that communicate with each other via the portion 47 are formed.

In the flow path substrate 41, a recess for forming a plurality of ejection chambers 46 and a common ink chamber 48 is formed using a single crystal silicon substrate. On the lower surface of the flow path substrate 41, there is provided a vibration plate 42 formed from an implantation layer 50 in which a light element such as hydrogen ions is implanted into a silicon substrate forming a wall surface which is a bottom surface of the discharge chamber 46.

A recess 54 is formed in the electrode substrate 43,
A predetermined gap 46 is formed between the diaphragm 42 and the bottom surface of the recess 54.
The electrode 55 which is the second electrode facing the electrode is formed, and the electrode 55 and the vibration plate 42 constitute a microactuator that displaces the vibration plate 42 to change the internal volume of the discharge chamber 46. On the electrode 55 of the electrode substrate 43, a thin insulating layer 57 such as a silicon oxide film is formed on the electrode 55 in order to prevent the electrode 55 from being damaged by a short circuit at the time of contact with the diaphragm 42. Further, the electrode 55 is extended to near the end of the electrode substrate 43 via a lead-out portion 55a, and an electrode pad portion 55b for connecting to an external drive circuit via a connection means is formed.

The electrode substrate 43 has a crystal plane orientation (10
Using the silicon substrate 0), a thermal oxide film 43a is formed on the silicon substrate by a thermal oxidation method, an electrode forming groove 54 is formed by etching with an HF aqueous solution or the like, and titanium nitride (TiN) or the like is formed in the groove 44. The electrode material having high heat resistance is formed to a desired thickness by a film forming technique such as sputtering, CVD, or vapor deposition, and then, the titanium nitride film is patterned to form the electrode 55.

As a material of the electrode 55 of the electrode substrate 43,
Although TiN is used, a metal material such as Al, Cr, and Ni that is generally used in a process of forming a semiconductor element, a high-melting metal such as Ti and W, or a metal whose resistance is reduced by impurities is also used. A crystalline silicon material or the like can also be used.

The flow path substrate 41 (more precisely, the diaphragm 4
Since the electrode substrate 43 is formed of a silicon substrate, the electrode substrate 43 is bonded to the electrode substrate 43 by a direct bonding method via an oxide film. When the electrode substrate 43 is formed of a glass substrate such as Pyrex glass, the electrode substrate 43 is formed of a silicon substrate and formed by anodic bonding via Pyrex glass.
May be formed on a silicon substrate, and bonded by eutectic bonding in which a binder such as gold is interposed on the bonding surface.

The nozzle plate 44 forms a large number of nozzles 45, and serves as a groove serving as a fluid resistance portion 47 that connects the common ink chamber 48 and the discharge chamber 46, and ink for supplying ink to the common ink chamber 48 from outside. The supply port 59 is formed, and the ejection surface is subjected to a water-repellent treatment. As the nozzle plate 44, for example, a plated film manufactured by a Ni electroforming method, a silicon substrate, a metal such as SUS, or a multilayer structure of a resin and a metal layer such as zirconia can be used. Here, the nozzle plate 44 is bonded to the flow path substrate 41 with an adhesive.

In this ink jet head, the vibration plate 42 is set to GND, and the vibration plate 42 serving also as the first electrode is used.
By applying a pulse potential of, for example, 10 to 35 V between the electrode 55 and the second electrode 55, the electrode 55 is charged to a positive potential, and a negative charge is induced on the surface of the diaphragm 42. The diaphragm 42 is deformed by the electrostatic attraction between the plate 42 and the electrode 55) until the diaphragm 42 comes into contact with the electrode 55, and the discharge chamber 46 is filled with ink. Subsequently, when the voltage application to the electrode 55 is turned off, the diaphragm 42 is restored to the discharge chamber 46 side due to the discharge of the electric charge accumulated between the electrodes. At that time, a rapid volume change / pressure change occurs in the discharge chamber 46,
The filled ink is ejected from the nozzle 45 as an ink droplet.

Here, since the vibration plate 42 is formed of the implantation layer 50 in which light element ions have been previously implanted into the silicon substrate, the variation in the thickness of the vibration plate is reduced as described above. The operation can be performed, the variation in the ink droplet ejection characteristics can be reduced, and a high-quality image can be recorded.

Next, a method of manufacturing the inkjet head according to the present invention for manufacturing the inkjet head will be described with reference to FIG. First, as shown in FIG. 3A, hydrogen ions are implanted into a first silicon substrate 61 having a crystal plane orientation (111) to form a defect layer 62, and a diaphragm substrate 60 is obtained. Here, the dose amount is 5 × 10E.
16. Hydrogen ions were implanted at an acceleration voltage of 130 KeV through a 350 nm thick oxide mask layer. Under these conditions, there was a distribution peak at a depth of about 1.2 μm.

Then, as shown in FIG. 4B, the second crystal plane orientation (110) or (100) serving as the flow path substrate 41 is obtained.
After pre-joining the silicon substrate 65 at room temperature, about 50
When a heat treatment at 0 ° C. was applied, the implantation defect layer 62 was separated / transferred from the diaphragm substrate 60 to the second silicon substrate 65 side, as shown in FIG. At this time, the thickness of the defect layer 62 after the transfer was about 1.1 μm. This was annealed at a high temperature of 1000 ° C. or more, so that the transferred defect layer 62 was more firmly joined to the silicon substrate 65.

Therefore, as shown in FIG. 4D, after an etching mask layer having a desired shape (not shown) is formed on the silicon substrate 65, anisotropic etching with KOH is performed from the (110) plane side to form (111). The flow path substrate 41 having the vibration plate 42 and the concave portion serving as the discharge chamber 46 was formed by stopping the etching on the surface. The etching conditions at this time were KOH 13 wt% and 80 ° C.

On the other hand, as shown in FIG. 5E, the entire surface of the silicon substrate having the crystal plane orientation (100) to be the electrode substrate 43 was thermally oxidized to form a thermal oxide film 43a of about 1.5 μm.
Then, the thermal oxide film 43a was etched into a predetermined shape to a depth of about 0.5 μ to form an electrode forming groove 54. The etchant was performed in BHF at room temperature. A 0.1 μm thick TiN film is formed on the bottom surface of the electrode forming groove 54 by sputtering, and is patterned into an electrode shape by dry etching to form an electrode 55.
Was formed. The electrode material is not particularly limited to TiN, but may be a high melting point metal such as Ta,
Even W, Nb, etc. can be used.

Further, an SiO ₂ film was formed thereon to a thickness of about 0.15 μm by P-CVD, and was patterned by dry etching to form an insulating film 57. Insulating film 57
Is provided to prevent the diaphragm 42 and the counter electrode 55 from being electrically short-circuited, and may be formed on the diaphragm 42 side or on the diaphragm 42 side.

Then, the flow path substrate 41 in which the vibration plate 42 and the discharge chamber 46 and the like were formed was directly joined to the electrode substrate 43 to be integrated. Finally, as shown in FIG. 6F, the nozzle plate 45 having the nozzles 45 and the fluid resistance portions 47 formed thereon is bonded to the flow path substrate 41 with an epoxy resin to complete the head.

Next, another example of the method for manufacturing an ink jet head according to the present invention will be described with reference to FIG.
First, as shown in FIG.
Implanting hydrogen ions into the silicon substrate 71 of FIG.
Is formed to obtain the diaphragm substrate 70. Here,
Hydrogen ions were implanted through an oxide mask layer having a thickness of 250 nm at a dose of 8 × 10E16 and an acceleration voltage of 170 Kev. Under these conditions, there was a distribution peak at a depth of about 2.3 μm.

On the other hand, as shown in FIG. 5B, Pyrex glass (specifically, # 774
0) and wet etching to a depth of 0.
A 45 μm electrode forming groove 54 was formed. The etchant was performed in BHF at room temperature. An electrode 55 was formed by depositing TiN to a thickness of 0.1 μm on the bottom surface of the electrode forming groove 54 by sputtering and patterning it into an electrode shape by dry etching. Further, Ta ₂ O ₅ is sputtered thereon to about 0.
A film was formed to a thickness of 1 μm and patterned by dry etching to form an insulating film 57.

Then, a diaphragm substrate 70 was bonded to the electrode substrate 43 by anodic bonding. The voltage was about 400 V and the heating was at 330 ° C. in N ₂ . After the anodic bonding is completed, the whole is annealed at about 430 ° C. for 30 minutes in N ₂ , thereby forming the diaphragm substrate 70 as shown in FIG.
The vibration layer 42 made of the defect layer 72 is formed on the electrode substrate 43 by separating (peeling) the defect layer 72. Finally,
As shown in FIG. 6D, a silicon substrate 75 integrally formed with the ejection part 46 and the nozzle 45 on the vibration plate 43 by anisotropic etching and dry etching is bonded with an adhesive.
Complete the inkjet head.

In the above embodiment, the present invention is applied to the ink jet head of the side shooter type in which the diaphragm displacement direction and the ink droplet ejection direction are the same, but the diaphragm displacement direction is orthogonal to the ink droplet ejection direction. The present invention can be similarly applied to an edge shooter type inkjet head. Further, the present invention can be applied not only to an inkjet head but also to an inkjet head that discharges a liquid resist or the like.

The microactuator according to the present invention can be applied to a micropump, a microswitch (microrelay), a multi-optical lens actuator (micromirror), a micro flow meter, a pressure sensor, etc., in addition to the above-described ink jet head. The same can be applied.

[0054]

As described above, according to the microactuator according to the present invention, since the diaphragm is formed of a layer in which a light element is implanted into a silicon substrate, the thickness of the diaphragm varies. The cost can be reduced, the cost can be reduced, and the reliability can be improved.

Here, a small electrostatic microactuator having excellent operation reliability can be obtained by having an electrode facing the diaphragm and deforming the diaphragm with electrostatic force.

According to the method for manufacturing a microactuator according to the present invention, there is provided a method for manufacturing a microactuator according to the present invention, wherein a layer in which a light element is implanted in advance is formed on a silicon substrate. After joining the light element-implanted layer to the base substrate, heat treatment is applied, and the light element-implanted layer is peeled and transferred to the base substrate, so there is little variation in the diaphragm thickness.
A microactuator with reduced cost and improved reliability can be obtained.

According to the ink jet head of the present invention, a nozzle for discharging ink droplets, a discharge chamber communicating with the nozzle, a diaphragm forming a wall surface of the discharge chamber, and a driving means for deforming the diaphragm The diaphragm is made of a layer in which a light element is implanted into a silicon substrate.Thus, variations in the thickness of the diaphragm are reduced, ink droplet ejection characteristics are improved, and costs are further reduced. I can do it.

Here, when the driving means is an electrode facing the diaphragm, the density and size of the head can be reduced. Further, the diaphragm is bonded to a base substrate, and since the base substrate is made of a silicon substrate, workability is improved and cost can be reduced. Alternatively, the diaphragm is bonded to a base substrate, and since the base substrate is formed of a glass substrate, it can be manufactured at a relatively low temperature, so that there is more room for material selection.

According to the method of manufacturing an ink jet head according to the present invention, there is provided a method of manufacturing an ink jet head according to the present invention, wherein a layer in which a light element is implanted in advance on a first silicon substrate is formed. After bonding the light element-implanted layer of the 1 silicon substrate to the second silicon substrate, heat treatment is applied to peel and transfer the light element-implanted layer to the second silicon substrate, and then etch the second silicon substrate. Since the diaphragm and the discharge chamber are formed, the cost, the density, and the size can be reduced.

[Brief description of the drawings]

FIG. 1 is an explanatory cross-sectional view illustrating a microactuator according to the present invention.

FIG. 2 is a process diagram illustrating an example of a manufacturing method according to the present invention for manufacturing the microactuator.

FIG. 3 is a process chart for explaining another example of the manufacturing method according to the present invention for manufacturing the microactuator.

FIG. 4 is an exploded perspective view showing an example of an inkjet head according to the present invention.

FIG. 5 is a top view showing the nozzle plate of the head in a transmission state.

FIG. 6 is an explanatory cross-sectional view of the head along the longitudinal direction of the diaphragm.

FIG. 7 is an explanatory cross-sectional view of the head taken along the transverse direction of the diaphragm.

FIG. 8 is an explanatory view illustrating an example of a manufacturing method according to the present invention for manufacturing the inkjet head.

FIG. 9 is an explanatory view illustrating another example of the manufacturing method according to the present invention for manufacturing the inkjet head.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vibration plate, 2 ... Implanted layer, 3 ... Base substrate, 5 ... Electrode, 41 ... Flow path substrate, 42 ... Vibration plate, 43 ... Electrode substrate,
44: nozzle plate, 46: discharge chamber, 48: common ink chamber, 54: recess, 55: electrode.

Claims (8)

[Claims] 1. A microactuator having a diaphragm as a movable portion, wherein the diaphragm is formed of a layer obtained by implanting a light element into a silicon substrate. 2. The microactuator according to claim 1, further comprising an electrode facing the diaphragm, wherein the diaphragm is deformed by electrostatic force. 3. A method for manufacturing a microactuator according to claim 1, wherein a layer in which a light element is implanted in advance is formed on a silicon substrate, and the layer in which the light element is implanted is formed on the silicon substrate. After bonding to the base substrate,
A method for manufacturing a microactuator, comprising: applying a heat treatment to peel and transfer the light-element-implanted layer to the base substrate. 4. An ink jet head comprising: a nozzle for discharging ink droplets; a discharge chamber communicating with the nozzle; a diaphragm forming a wall surface of the discharge chamber; and a driving unit for deforming the diaphragm. An ink jet head, wherein the vibration plate is formed of a layer obtained by implanting a light element into a silicon substrate. 5. The ink jet head according to claim 4, wherein said driving means is an electrode facing said diaphragm. 6. The ink jet head according to claim 4, wherein the diaphragm is joined to a base substrate,
The ink jet head, wherein the base substrate is made of a silicon substrate. 7. The ink jet head according to claim 4, wherein the diaphragm is joined to a base substrate,
The ink jet head, wherein the base substrate is made of a glass substrate. 8. The method for manufacturing an ink jet head according to claim 4, wherein a layer in which a light element is implanted in advance is formed on the first silicon substrate. After joining the layer into which the light element is implanted to the second silicon substrate, a heat treatment is applied, the layer into which the light element is implanted is peeled and transferred to the second silicon substrate, and then the second silicon substrate is etched by etching. A method for manufacturing an ink jet head, comprising forming a diaphragm and a discharge chamber.