JPWO2010150610A1 - Thin film actuator and inkjet head - Google Patents
Thin film actuator and inkjet head Download PDFInfo
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- JPWO2010150610A1 JPWO2010150610A1 JP2011519697A JP2011519697A JPWO2010150610A1 JP WO2010150610 A1 JPWO2010150610 A1 JP WO2010150610A1 JP 2011519697 A JP2011519697 A JP 2011519697A JP 2011519697 A JP2011519697 A JP 2011519697A JP WO2010150610 A1 JPWO2010150610 A1 JP WO2010150610A1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2047—Membrane type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead based oxides
- H10N30/8554—Lead zirconium titanate based
Abstract
駆動信号により膜面に沿った方向に伸縮する変位膜と、変位膜を挟んで形成され、駆動信号が印加される2つの電極膜と、2つの電極膜の一方の電極膜に沿って形成され、膜面に沿った方向の応力を有する応力膜と、を有する薄膜層と、開口が形成された基板と、を備えた薄膜アクチュエータであって、薄膜層は、基板の開口を覆い、該薄膜層の周縁は、基板に固定され、変位膜の基板の開口に対応する領域は、非駆動時、少なくとも応力膜の応力により、膜面に垂直な方向に凸形状である。A displacement film that expands and contracts in the direction along the film surface by a drive signal, two electrode films formed by sandwiching the displacement film, and formed along one electrode film of the two electrode films A thin film layer comprising: a stress film having a stress in a direction along the film surface; and a substrate having an opening formed therein, the thin film layer covering the opening of the substrate, the thin film The peripheral edge of the layer is fixed to the substrate, and the region of the displacement film corresponding to the opening of the substrate has a convex shape in a direction perpendicular to the film surface due to at least the stress of the stress film when not driven.
Description
本発明は、薄膜アクチュエータ、及びインクジェットヘッドに関する。 The present invention relates to a thin film actuator and an inkjet head.
従来、微小変位を発生させる為のマイクロアクチュエータとして、圧電体や形状記憶合金、バイメタル等を基板の表面に薄い膜状(変位膜)に形成したカンチレバー構造(片もち梁)の薄膜アクチュエータが知られている。薄膜アクチュエータは、変位膜の面に沿う伸縮変形を面に垂直な方向の変位に効率よく変換することができる為、感度の高い圧力センサや各種駆動素子を構成することができる。 Conventionally, as a microactuator for generating a minute displacement, a thin film actuator having a cantilever structure (single cantilever beam) in which a piezoelectric body, a shape memory alloy, a bimetal, etc. are formed in a thin film (displacement film) on the surface of a substrate is known ing. The thin film actuator can efficiently convert the expansion / contraction deformation along the surface of the displacement film into the displacement in the direction perpendicular to the surface, so that a highly sensitive pressure sensor and various driving elements can be configured.
一方、カンチレバー構造(片もち梁)の薄膜アクチュエータは、梁(変位膜)の先端が固定されていない自由端の為、剛性が低く、外力による変形や捩れ等が生じやすいという問題があった。 On the other hand, a thin film actuator having a cantilever structure (single beam) has a problem that it has a low rigidity because the tip of the beam (displacement film) is not fixed, and is likely to be deformed or twisted by an external force.
そこで、このような問題に対応する為、変位膜の両端を固定した両もち梁構造や周縁を固定したダイヤフラム構造にすることにより、変位膜の剛性を高める方法が提案されている(特許文献1参照)。 Therefore, in order to cope with such a problem, there has been proposed a method for increasing the rigidity of the displacement film by using a double beam structure in which both ends of the displacement film are fixed or a diaphragm structure in which the peripheral edge is fixed (Patent Document 1). reference).
特許文献1に記載されているような両もち梁構造や周縁を固定したダイヤフラム構造の薄膜アクチュエータは、変位膜の剛性が高くなる為、発生圧力を大きくできる、外部からの力により安定して変形できる、変位膜の中心部を基板に平行に移動できる、密閉構造により気体や液体を移送するポンプに活用できる等の利点がある。 A thin film actuator with a diaphragm structure with a fixed beam structure and a peripheral edge as described in Patent Document 1 increases the rigidity of the displacement film, so that the generated pressure can be increased, and it can be stably deformed by an external force. There is an advantage that the central part of the displacement film can be moved in parallel with the substrate, and that it can be used for a pump for transferring gas or liquid by a sealed structure.
一方、このような構造の薄膜アクチュエータは、変位膜の両端、または周縁が固定されている為、変位膜を膜面に沿って収縮方向に変形させても膜面に垂直方向の変位はほとんど得られない。 On the other hand, since the thin film actuator having such a structure has both ends or peripheral edges of the displacement film fixed, even if the displacement film is deformed in the contraction direction along the film surface, almost no displacement in the direction perpendicular to the film surface is obtained. I can't.
そこで、特許文献1に記載の薄膜アクチュエータは、変位膜を膜面に沿って伸長方向に変形させることにより垂直方向の変位が得られるような構成としている。 Therefore, the thin film actuator described in Patent Document 1 is configured such that a displacement in the vertical direction is obtained by deforming the displacement film in the extending direction along the film surface.
しかしながら、変位膜が平坦な初期状態(非駆動時)から伸長し変形すると、変位膜の強度の低い部位に応力が集中して、その部位が座屈し、程度の大きい場合には皺のような高次の変形が生じるという問題がある。 However, when the displacement film stretches and deforms from the flat initial state (when not driven), stress concentrates on the low-strength part of the displacement film, and the part buckles. There is a problem that higher-order deformation occurs.
さらに、変位膜の初期状態が平坦な為、原理的に変位膜の上側、下側の何れの方向に変位するかが定まらないという問題がある。この変形方向については、変位膜の上面、及び下面に設けた2つの電極膜の厚みを異ならせ、変位膜の剛性に差異を設けることにより、変位方向を決定する構成としている。しかしながら、応力の集中状態は、ゴミやキズ等による僅かなアンバランスで変化しやすく、変位膜の変位方向を所望の方向に安定させることは困難である。 Furthermore, since the initial state of the displacement film is flat, there is a problem that in principle it is not possible to determine in which direction the upper side or the lower side of the displacement film is displaced. With respect to this deformation direction, the thicknesses of the two electrode films provided on the upper surface and the lower surface of the displacement film are made different to provide a difference in rigidity of the displacement film, thereby determining the displacement direction. However, the stress concentration state is likely to change with a slight imbalance due to dust or scratches, and it is difficult to stabilize the displacement direction of the displacement film in a desired direction.
本発明は、上記課題を鑑みてなされたもので、所望の変位形状と変位方向を安定して得ることができる薄膜アクチュエータ、及びインクジェットヘッドを提供することを目的とする。 The present invention has been made in view of the above problems, and an object thereof is to provide a thin film actuator and an ink jet head capable of stably obtaining a desired displacement shape and displacement direction.
上記目的は、下記の1から5の何れか1項に記載の発明によって達成される。 The above object is achieved by the invention described in any one of 1 to 5 below.
1.駆動信号により膜面に沿った方向に伸縮する変位膜と、
前記変位膜を挟んで形成され、前記駆動信号が印加される2つの電極膜と、
前記2つの電極膜の一方の電極膜に沿って形成され、膜面に沿った方向の応力を有する応力膜と、を有する薄膜層と、
開口が形成された基板と、を備えた薄膜アクチュエータであって、
前記薄膜層は、前記基板の開口を覆い、該薄膜層の周縁は、前記基板に固定され、
前記変位膜の前記基板の開口に対応する領域は、非駆動時、少なくとも前記応力膜の前記応力により、前記膜面に垂直な方向に凸形状であることを特徴とする薄膜アクチュエータ。1. A displacement film that expands and contracts in the direction along the film surface by a drive signal;
Two electrode films formed across the displacement film and to which the drive signal is applied;
A thin film layer having a stress film formed along one of the two electrode films and having a stress in a direction along the film surface;
A thin film actuator comprising: a substrate on which an opening is formed;
The thin film layer covers an opening of the substrate, and a peripheral edge of the thin film layer is fixed to the substrate.
The region corresponding to the opening of the substrate of the displacement film has a convex shape in a direction perpendicular to the film surface due to at least the stress of the stress film when not driven.
2.前記応力膜の前記応力の方向は、該応力膜の膜面に沿って伸長方向であることを特徴とする前記1に記載の薄膜アクチュエータ。 2. 2. The thin film actuator according to 1, wherein the direction of the stress of the stress film is an extension direction along a film surface of the stress film.
3.前記2つの電極膜の内、前記変位膜の表面に形成された電極膜は、該変位膜の前記基板の開口に対応する領域より内側に形成されていることを特徴とする前記1または2に記載の薄膜アクチュエータ。 3. Of the two electrode films, the electrode film formed on the surface of the displacement film is formed inside the region corresponding to the opening of the substrate of the displacement film. The thin film actuator described.
4.前記2つの電極膜の内、前記変位膜の表面に形成された電極膜は、該変位膜の前記基板の開口に対応する領域を含む領域に形成されていることを特徴とする前記1または2に記載の薄膜アクチュエータ。 4). Of the two electrode films, the electrode film formed on the surface of the displacement film is formed in a region including a region corresponding to the opening of the substrate of the displacement film. The thin film actuator described in 1.
5.前記1から4の何れか1項に記載の薄膜アクチュエータと、
前記基板の裏面に接合され、該基板の開口に連通しインクを吐出するノズル孔が形成されたノズル基板と、
前記開口の内部に、前記インクを収容し、前記変位膜の変位により圧力を発生する圧力室と、を有することを特徴とするインクジェットヘッド。5. The thin film actuator according to any one of 1 to 4,
A nozzle substrate bonded to the back surface of the substrate and having nozzle holes that communicate with the openings of the substrate and discharge ink;
An ink jet head comprising: a pressure chamber that accommodates the ink in the opening and generates pressure by displacement of the displacement film.
本発明によれば、変位膜の基板の開口に対応する領域は、非駆動時、少なくとも応力膜の応力により、膜面に垂直な方向に凸形状となる構成とした。すなわち、変位膜に一次の初期変形を与える構成とした。これにより、不要な部位へ応力が集中することによる、座屈や皺のような高次の変形の発生を防止することができる。その結果、所望の変位形状と変位方向とを安定して得ることができる。 According to the present invention, the region corresponding to the opening of the substrate of the displacement film is configured to be convex in a direction perpendicular to the film surface due to at least the stress of the stress film when not driven. That is, the first initial deformation is applied to the displacement film. As a result, it is possible to prevent the occurrence of higher-order deformation such as buckling or wrinkles due to stress concentration on unnecessary portions. As a result, a desired displacement shape and displacement direction can be obtained stably.
以下図面に基づいて、本発明の実施形態に係る薄膜アクチュエータ、及びインクジェットヘッドを説明する。尚、本発明は該実施の形態に限られない。 Hereinafter, a thin film actuator and an inkjet head according to an embodiment of the present invention will be described based on the drawings. The present invention is not limited to the embodiment.
最初に、本発明の実施形態に係る薄膜アクチュエータの構成、及びその製造方法を、図1を用いて説明する。図1(a)〜図1(h)は、薄膜アクチュエータ1の製造工程、及び薄膜アクチュエータの非駆動時の変形(以下、初期変形とも記する)態様を示す断面模式図である。 First, a configuration of a thin film actuator according to an embodiment of the present invention and a manufacturing method thereof will be described with reference to FIG. FIG. 1A to FIG. 1H are schematic cross-sectional views showing a manufacturing process of the thin film actuator 1 and a deformation mode (hereinafter, also referred to as initial deformation) when the thin film actuator is not driven.
最初に、基板101を準備する(図1(a))。基板101の材料としては、シリコンやガラス、セラミックス等を用いることができるが、MEMS(Micro Electro Mechanical Systems)等に広く用いられている結晶シリコン(Si)が好適であり、本実施形態においては結晶シリコンを用いた例を説明する。 First, the substrate 101 is prepared (FIG. 1A). As the material of the substrate 101, silicon, glass, ceramics, or the like can be used. Crystalline silicon (Si) widely used for MEMS (Micro Electro Mechanical Systems) is suitable, and in this embodiment, crystal silicon (Si) is used. An example using silicon will be described.
次に、基板101を加熱炉に入れ、1500℃程度に所定時間保持して加熱し、基板101の表面に応力膜102となる熱酸化膜(石英:SiO2)を形成する(図1(b1))。続いて、応力膜102が形成された基板101を常温まで冷却する。この時、基板(Si)101と応力膜(石英:SiO2)102の熱膨張係数の差により、応力膜102は、膜面に沿って伸長方向の応力が発生する(図1(b2);矢印X1)。Next, the substrate 101 is put into a heating furnace and heated at a temperature of about 1500 ° C. for a predetermined time to form a thermal oxide film (quartz: SiO 2 ) that becomes the stress film 102 on the surface of the substrate 101 (FIG. 1 (b1)). )). Subsequently, the substrate 101 on which the stress film 102 is formed is cooled to room temperature. At this time, due to the difference in thermal expansion coefficient between the substrate (Si) 101 and the stress film (quartz: SiO 2 ) 102, the stress film 102 generates a stress in the extension direction along the film surface (FIG. 1 (b2); Arrow X1).
次に、応力膜102の表面に下電極膜103を形成する(図1(c))。下電極膜101の材料としては、例えばチタン、白金等を用いることができる。下電極膜101の形成方法としては、例えばスパッタ法を用いることができる。 Next, the lower electrode film 103 is formed on the surface of the stress film 102 (FIG. 1C). As a material of the lower electrode film 101, for example, titanium, platinum or the like can be used. As a method for forming the lower electrode film 101, for example, a sputtering method can be used.
次に、下電極膜103が形成された基板101を再度加熱炉に入れ、600℃程度に所定時間保持して加熱し、下電極膜103の表面に、変位膜104を形成する(図1(d1))。変位膜104の材料としては、例えば圧電材料であるチタン酸ジルコン酸鉛(PZT)を用いることができる。変位膜104の形成方法としては、例えばスパッタ法を用いることができる。続いて、変位膜104が形成された基板101を常温まで冷却する。この時、基板(Si)101と変位膜(PZT)104の熱膨張係数の差により、変位膜104は、膜面に沿って収縮方向の応力が発生する(図1(d2);矢印X2)。また、この時、基板101に反りが生じるが、基板101の厚みが形成された上記各膜の厚みに比べて十分に大きい場合には、その反り量は無視できるものである。 Next, the substrate 101 on which the lower electrode film 103 is formed is again put in a heating furnace, and is heated at a temperature of about 600 ° C. for a predetermined time to form a displacement film 104 on the surface of the lower electrode film 103 (FIG. 1 ( d1)). As a material of the displacement film 104, for example, lead zirconate titanate (PZT) which is a piezoelectric material can be used. As a method of forming the displacement film 104, for example, a sputtering method can be used. Subsequently, the substrate 101 on which the displacement film 104 is formed is cooled to room temperature. At this time, due to the difference in thermal expansion coefficient between the substrate (Si) 101 and the displacement film (PZT) 104, the displacement film 104 generates stress in the contraction direction along the film surface (FIG. 1 (d2); arrow X2). . At this time, the substrate 101 is warped. However, when the thickness of the substrate 101 is sufficiently larger than the thickness of each of the films formed, the amount of warpage is negligible.
尚、基板101の材料であるSiの熱膨張係数は3ppm/K、応力膜102となるSiO2の熱膨張係数は0.5ppm/K、変位膜104の材料であるPZTの熱膨張係数は8ppm/Kである。The thermal expansion coefficient of Si, which is the material of the substrate 101, is 3 ppm / K, the thermal expansion coefficient of SiO 2 that is the stress film 102 is 0.5 ppm / K, and the thermal expansion coefficient of PZT, which is the material of the displacement film 104, is 8 ppm. / K.
次に、変位膜104の表面に上電極膜105を形成する(図1(e))。上電極膜105の材料としては、例えばクロム、金等を用いることができる。上電極膜105の形成方法としては、例えばスパッタ法を用いることができる。このようにして、応力膜102、下電極膜103、変位膜104、上電極膜105等から構成される薄膜層が形成される。 Next, the upper electrode film 105 is formed on the surface of the displacement film 104 (FIG. 1E). As a material of the upper electrode film 105, for example, chromium, gold, or the like can be used. As a method for forming the upper electrode film 105, for example, a sputtering method can be used. In this way, a thin film layer composed of the stress film 102, the lower electrode film 103, the displacement film 104, the upper electrode film 105, and the like is formed.
次に、基板101の裏面に感光性樹脂をスピンコート法を用いて塗布し、レジスト膜80を成膜する(図1(f))。続いて、フォトマスクを介して露光しレジスト膜80をパターン化する(図1(g))。 Next, a photosensitive resin is applied to the back surface of the substrate 101 using a spin coating method to form a resist film 80 (FIG. 1F). Subsequently, the resist film 80 is patterned by exposure through a photomask (FIG. 1G).
次に、反応性イオンエッチング法を用いて基板101をエッチングし、開口101aを形成し(図1(h1))、薄膜アクチュエータ1を完成させる。この時、応力膜102の周縁が基板101に固定された状態となり、膜全体(応力膜102、変位膜104)がダイヤフラム構造となる。そして、前述のように、応力膜102には伸長方向(矢印X1)の応力が、変位膜104には収縮方向(矢印X2)の応力が作用している為、膜全体が膜面に垂直な方向に凸形状となる(図1(h2))。すなわち、膜全体は一次の初期変形がなされる。 Next, the substrate 101 is etched using a reactive ion etching method to form an opening 101a (FIG. 1 (h1)), and the thin film actuator 1 is completed. At this time, the periphery of the stress film 102 is fixed to the substrate 101, and the entire film (the stress film 102 and the displacement film 104) has a diaphragm structure. As described above, since the stress in the expansion direction (arrow X1) is applied to the stress film 102 and the stress in the contraction direction (arrow X2) is applied to the displacement film 104, the entire film is perpendicular to the film surface. It becomes a convex shape in the direction (FIG. 1 (h2)). That is, the entire film undergoes a primary initial deformation.
尚、前述の応力の大きさは、膜(応力膜102、変位膜104)を形成するときの温度、膜の材料と基板101の材料の熱膨張係数の差異等で決まる。また、膜の変形量は、前述の応力に加えて、膜の厚み、面積、剛性等で決まる。膜の形状が円形のダイヤフラム構造の場合、膜の応力はその中心と周縁が大きくなる。後述の駆動時の変形を含めて、内部応力の値が材料の破壊応力の範囲内に収まるように、上記変数を調整し、応力の値を制御する。 The magnitude of the stress is determined by the temperature at which the film (stress film 102, displacement film 104) is formed, the difference in thermal expansion coefficient between the film material and the substrate 101 material, and the like. Further, the amount of deformation of the film is determined by the thickness, area, rigidity, etc. of the film in addition to the stress described above. In the case of a diaphragm structure having a circular membrane shape, the center and the periphery of the membrane stress increase. The above variables are adjusted and the stress value is controlled so that the internal stress value is within the range of the fracture stress of the material, including deformation during driving described later.
次に、薄膜アクチュエータ1の駆動時の変形について、図2を用いて説明する。図2(a)は、薄膜アクチュエータ1の非駆動時の変形の態様を示す断面模式図、図2(b)は、薄膜アクチュエータ1の駆動時の変形の態様を示す断面模式図である。 Next, deformation during driving of the thin film actuator 1 will be described with reference to FIG. 2A is a schematic cross-sectional view showing a deformation mode when the thin film actuator 1 is not driven, and FIG. 2B is a schematic cross-sectional view showing a deformation mode when the thin film actuator 1 is driven.
PZTからなる変位膜104は、膜面に垂直な方向に誘電分極している(図2(a);矢印P)。上電極膜105と下電極膜103の間にAC電圧を印加すると(図2(b);矢印E)、変位膜104は、膜面に垂直な方向に伸縮するとともに、膜面に沿った方向に反対の位相で伸縮する(図2(b);矢印X)。変位膜104が膜面に沿った方向に伸縮することは、前述の内部応力が増減することに等しく、変位膜104は、非駆動時の位置(初期変形位置)を中心として、膜面に垂直な方向に変位する(図2(b);矢印Y)。 The displacement film 104 made of PZT is dielectrically polarized in a direction perpendicular to the film surface (FIG. 2A; arrow P). When an AC voltage is applied between the upper electrode film 105 and the lower electrode film 103 (FIG. 2B; arrow E), the displacement film 104 expands and contracts in a direction perpendicular to the film surface and a direction along the film surface. It expands and contracts in the opposite phase to (Fig. 2 (b); arrow X). The expansion and contraction of the displacement film 104 in the direction along the film surface is equivalent to the increase or decrease of the internal stress described above, and the displacement film 104 is perpendicular to the film surface around the non-driven position (initial deformation position). (Fig. 2 (b); arrow Y).
次に、薄膜アクチュエータ1の中心部と周辺部の曲げ力のバランスによる初期変形時の形状変化の様子を図3に示す。 Next, FIG. 3 shows how the shape of the thin film actuator 1 changes during initial deformation due to the balance of bending forces at the center and the periphery.
前述のように、非駆動時、薄膜アクチュエータ1には、応力膜102の伸長方向の応力と変位膜104の収縮方向の応力が作用している為、膜全体が膜面に垂直な方向に凸形状となる。 As described above, since the stress in the expansion direction of the stress film 102 and the stress in the contraction direction of the displacement film 104 act on the thin film actuator 1 when not driven, the entire film protrudes in a direction perpendicular to the film surface. It becomes a shape.
膜全体の周縁が固定されていない自由端の構成では、膜全体が膜面に垂直な方向に凸状に湾曲した皿状となるが、本実施形態のように、周縁が基板101に固定されたたダイヤフラム構成では、膜全体の周辺部の曲げの力と中心部の曲げの力が拮抗する可能性がある(図3(a))。 In the configuration of the free end where the periphery of the entire film is not fixed, the entire film has a dish shape that is convexly curved in a direction perpendicular to the film surface, but the periphery is fixed to the substrate 101 as in this embodiment. In the case of the diaphragm configuration, there is a possibility that the bending force of the peripheral part of the entire film and the bending force of the central part are antagonized (FIG. 3A).
周辺部の曲げの力が中心部の曲げの力よりも弱い場合には、中心部が大きく膜面に垂直な方向に凸形状となるが(図3(b))、強い場合には、中心部が膜面に垂直な方向に凸形状となるとともに周辺部が隆起する(図3(c))。周辺部の力がさらに強い場合には、膜全体が膜面に垂直な反対の方向に凸形状となる場合もある(図3(d))。 When the bending force of the peripheral part is weaker than the bending force of the central part, the central part is large and has a convex shape in the direction perpendicular to the film surface (FIG. 3B). The portion becomes convex in a direction perpendicular to the film surface, and the peripheral portion is raised (FIG. 3C). When the peripheral force is even stronger, the entire film may have a convex shape in the opposite direction perpendicular to the film surface (FIG. 3D).
薄膜アクチュエータ1の駆動時の変位量を大きくする為には、膜全体の初期変形の形状を、図3(b)または図3(d)に示した形状にすることが好ましい。 In order to increase the amount of displacement when the thin film actuator 1 is driven, it is preferable that the shape of the initial deformation of the entire film be the shape shown in FIG. 3 (b) or FIG. 3 (d).
図4に、薄膜アクチュエータ1の上電極膜105の大きさによる初期変形時の形状変化の様子を示す。 FIG. 4 shows how the shape changes during initial deformation depending on the size of the upper electrode film 105 of the thin film actuator 1.
上電極膜105を膜全体の中心部のみに形成した場合(図4(a1))、中心部の剛性が上昇し変形し難くなる為、前述の図3(d)に示した形状に近づけることができる(図4(a2))。一方、上電極膜105を開口101aの幅Wより広く形成した場合(図4(b1))、周辺部の剛性が上昇し変形し難くなる為、図3(b)に示した形状に近づけることができる(図4(b2))。 When the upper electrode film 105 is formed only at the central portion of the entire film (FIG. 4 (a1)), the rigidity of the central portion is increased and it is difficult to deform, so that it approaches the shape shown in FIG. 3 (d). (FIG. 4 (a2)). On the other hand, when the upper electrode film 105 is formed wider than the width W of the opening 101a (FIG. 4 (b1)), the rigidity of the peripheral portion increases and it becomes difficult to deform, so that the shape shown in FIG. (FIG. 4 (b2)).
このように、膜全体の内部応力や直径、厚み、剛性等のパラメータを調整しても、初期変形時の形状を、図3(b)や図3(d)に示した形状に制御できない場合、上電極膜105の形状を調整することで所望の形状にすることができる。 As described above, even when parameters such as internal stress, diameter, thickness, and rigidity of the entire film are adjusted, the shape at the time of initial deformation cannot be controlled to the shape shown in FIG. 3B or 3D. The desired shape can be obtained by adjusting the shape of the upper electrode film 105.
このように本発明の実施形態に係る薄膜アクチュエータ1においては、変位膜104の基板101の開口101aに対応する領域は、非駆動時、少なくとも応力膜102の応力により、膜面に垂直な開口101aの方向またはその反対の方向に凸形状となる構成とした。すなわち、変位膜104に一次の初期変形を与える構成とした。これにより、不要な部位へ応力が集中することによる、座屈や皺のような高次の変形の発生を防止することができる。その結果、所望の変位形状と変位方向を安定して得ることができる。 Thus, in the thin film actuator 1 according to the embodiment of the present invention, the region of the displacement film 104 corresponding to the opening 101a of the substrate 101 is the opening 101a perpendicular to the film surface due to at least the stress of the stress film 102 when not driven. Convex shape in the direction of or the opposite direction. That is, the displacement film 104 is subjected to primary initial deformation. As a result, it is possible to prevent the occurrence of higher-order deformation such as buckling or wrinkles due to stress concentration on unnecessary portions. As a result, a desired displacement shape and displacement direction can be obtained stably.
次に、本発明の実施形態に係るインクジェットヘッドの構成を、図5を用いて説明する。図5は、インクジェットヘッド1Aの概略構成を示す断面模式図である。 Next, the configuration of the inkjet head according to the embodiment of the present invention will be described with reference to FIG. FIG. 5 is a schematic cross-sectional view showing a schematic configuration of the inkjet head 1A.
インクジェットヘッド1Aは、図1に示すように、ノズル基板2、及びボディ基板(基板)101、応力膜102、共通電極膜(下電極膜)103、変位膜104、駆動電極膜(上電極膜)105等を有する前述の薄膜アクチュエータ1等から構成される。 As shown in FIG. 1, the inkjet head 1A includes a nozzle substrate 2, a body substrate (substrate) 101, a stress film 102, a common electrode film (lower electrode film) 103, a displacement film 104, and a drive electrode film (upper electrode film). The above-described thin film actuator 1 having 105 or the like.
ノズル基板2には、インクを吐出する複数のノズル孔2aが形成されている。ノズル基板2の材料としては、シリコンやガラス、セラミックス材料等を用いることができるがシリコンが好適である。ノズル基板2の上面側には、薄膜アクチュエータ1のボディ基板101が接合されている。ボディ基板101の内側には、ノズル基板2を接合することにより構成される圧力室(開口)101aや図示しないインク供給路等が形成されている。圧力室101aは、複数のノズル孔2aに対応してそれぞれ形成されインクを収容する。 The nozzle substrate 2 is formed with a plurality of nozzle holes 2a for ejecting ink. As a material for the nozzle substrate 2, silicon, glass, a ceramic material, or the like can be used, but silicon is preferable. The body substrate 101 of the thin film actuator 1 is bonded to the upper surface side of the nozzle substrate 2. Inside the body substrate 101, a pressure chamber (opening) 101 a configured by bonding the nozzle substrate 2, an ink supply path (not shown), and the like are formed. The pressure chamber 101a is formed corresponding to each of the plurality of nozzle holes 2a and stores ink.
駆動電極膜105と共通電極膜103との間に、外部の図示しない駆動回路から駆動信号が印加されると、変位膜104は振動し、この振動がボディ基板101に形成されインクを収容する圧力室101aの圧力を変化させ、ノズル基板2に形成されたノズル孔2aからインク滴を吐出させる。 When a drive signal is applied between the drive electrode film 105 and the common electrode film 103 from an external drive circuit (not shown), the displacement film 104 vibrates, and this vibration is formed on the body substrate 101 to store the ink. The pressure in the chamber 101 a is changed, and ink droplets are ejected from the nozzle holes 2 a formed in the nozzle substrate 2.
インクジェットヘッド1Aの駆動素子として、所望の変位形状と変位方向とを安定して得ることができる前述の薄膜アクチュエータ1を用いることにより、インク液滴を高精度、且つ効率よく吐出することができる。 By using the above-described thin film actuator 1 that can stably obtain a desired displacement shape and displacement direction as a drive element of the inkjet head 1A, it is possible to eject ink droplets with high accuracy and efficiency.
以上、本発明を実施の形態を参照して説明してきたが、本発明は前述の実施の形態に限定して解釈されるべきでなく、適宜変更、改良が可能であることは勿論である。例えば、前述の実施形態においては、応力膜102としてSiO2膜を用いたが、Siを窒化したSiN膜や他の金属膜、絶縁膜等を用いてもよい。また、変位膜103としてPZTを用いたが、チタン酸バリウム等の圧電膜、チタンニッケル合金等の形状記憶合金膜、鉄ニッケル合金等のバイメタル等を用いてもよい。膜の材料により、剛性、破壊応力、熱膨張係数、形成時の加熱温度等に差異がある為、組み合わせることにより要求仕様に最適な初期変形形状、初期変形量、駆動変形量等を得ることができる。The present invention has been described above with reference to the embodiments. However, the present invention should not be construed as being limited to the above-described embodiments, and can be changed or improved as appropriate. For example, although the SiO 2 film is used as the stress film 102 in the above-described embodiment, a SiN film obtained by nitriding Si, another metal film, an insulating film, or the like may be used. Further, although PZT is used as the displacement film 103, a piezoelectric film such as barium titanate, a shape memory alloy film such as titanium nickel alloy, a bimetal such as iron nickel alloy, or the like may be used. Depending on the material of the film, there are differences in rigidity, fracture stress, thermal expansion coefficient, heating temperature at the time of formation, etc., so it is possible to obtain the initial deformation shape, initial deformation amount, drive deformation amount, etc. optimal for the required specifications by combining it can.
また、前述の実施形態においては、膜はダイヤフラム構造としたが、膜の両端を固定した両もち梁構造であってもよい。この場合もダイヤフラム構造の場合と同様の効果を得ることができる。 In the above-described embodiment, the film has a diaphragm structure, but a double beam structure in which both ends of the film are fixed may be used. In this case, the same effect as that of the diaphragm structure can be obtained.
また、前述の実施形態においては、基板101の上に、応力膜102、下電極膜103、変位膜104、上電極膜105の順に各膜を形成する構成としたが、基板101の上に、下電極膜103、変位膜104、上電極膜105、応力膜102の順に各膜を形成する構成としてもよい。この場合も前述の実施形態の場合と同様の効果を得ることができる。 In the above embodiment, the stress film 102, the lower electrode film 103, the displacement film 104, and the upper electrode film 105 are formed in this order on the substrate 101. However, on the substrate 101, The lower electrode film 103, the displacement film 104, the upper electrode film 105, and the stress film 102 may be formed in this order. In this case, the same effect as that of the above-described embodiment can be obtained.
1A インクジェットヘッド
1 薄膜アクチュエータ
101 基板(ボディ基板)
101a 開口(圧力室)
102 応力膜
103 下電極膜(共通電極膜)
104 変位膜
105 上電極膜(駆動電極膜)
2 ノズル基板
2a ノズル孔1A Inkjet head 1 Thin film actuator 101 Substrate (body substrate)
101a Opening (pressure chamber)
102 Stress film 103 Lower electrode film (common electrode film)
104 Displacement film 105 Upper electrode film (drive electrode film)
2 Nozzle substrate 2a Nozzle hole
Claims (5)
前記変位膜を挟んで形成され、前記駆動信号が印加される2つの電極膜と、
前記2つの電極膜の一方の電極膜に沿って形成され、膜面に沿った方向の応力を有する応力膜と、を有する薄膜層と、
開口が形成された基板と、を備えた薄膜アクチュエータであって、
前記薄膜層は、前記基板の開口を覆い、該薄膜層の周縁は、前記基板に固定され、
前記変位膜の前記基板の開口に対応する領域は、非駆動時、少なくとも前記応力膜の前記応力により、前記膜面に垂直な方向に凸形状であることを特徴とする薄膜アクチュエータ。A displacement film that expands and contracts in the direction along the film surface by a drive signal;
Two electrode films formed across the displacement film and to which the drive signal is applied;
A thin film layer having a stress film formed along one of the two electrode films and having a stress in a direction along the film surface;
A thin film actuator comprising: a substrate on which an opening is formed;
The thin film layer covers an opening of the substrate, and a peripheral edge of the thin film layer is fixed to the substrate.
The region corresponding to the opening of the substrate of the displacement film has a convex shape in a direction perpendicular to the film surface due to at least the stress of the stress film when not driven.
前記基板の裏面に接合され、該基板の開口に連通しインクを吐出するノズル孔が形成されたノズル基板と、
前記開口の内部に、前記インクを収容し、前記変位膜の変位により圧力を発生する圧力室と、を有することを特徴とするインクジェットヘッド。The thin film actuator according to any one of claims 1 to 4,
A nozzle substrate bonded to the back surface of the substrate and having nozzle holes that communicate with the openings of the substrate and discharge ink;
An ink jet head comprising: a pressure chamber that accommodates the ink in the opening and generates pressure by displacement of the displacement film.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014046582A (en) * | 2012-08-31 | 2014-03-17 | Toshiba Tec Corp | Inkjet head and image forming apparatus |
JP2018154121A (en) * | 2017-03-17 | 2018-10-04 | 株式会社リコー | Liquid discharge head, liquid discharge unit, and liquid discharge device |
Families Citing this family (1)
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Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11314365A (en) * | 1998-05-08 | 1999-11-16 | Seiko Epson Corp | Ink jet recording head and ink jet recorder |
JP2000141644A (en) * | 1998-11-05 | 2000-05-23 | Seiko Epson Corp | Ink jet recording head and ink jet recorded |
JP2001320100A (en) * | 1999-10-01 | 2001-11-16 | Ngk Insulators Ltd | Piezoelectric/electrostrictive device and method of manufacturer |
JP2002033530A (en) * | 1999-10-01 | 2002-01-31 | Ngk Insulators Ltd | Piezoelectric/electrostrictive device and manufacturing method thereof |
JP2002218771A (en) * | 2001-01-24 | 2002-08-02 | Matsushita Electric Ind Co Ltd | Actuator and manufacture of the same |
JP2004066571A (en) * | 2002-08-05 | 2004-03-04 | Ricoh Co Ltd | Liquid drop ejecting head, ink cartridge, and image recorder |
JP2004209733A (en) * | 2002-12-27 | 2004-07-29 | Canon Inc | Manufacturing method for inkjet head |
JP2004260158A (en) * | 2003-02-07 | 2004-09-16 | Canon Inc | Dielectric film element, piezoelectric actuator using same, and ink jet head |
JP2006141082A (en) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | Small piezoelectric element, and small drive device |
JP2008042191A (en) * | 2006-07-14 | 2008-02-21 | Canon Inc | Piezoelectric element and manufacturing method thereof, and ink jet head |
-
2010
- 2010-05-24 JP JP2011519697A patent/JPWO2010150610A1/en active Pending
- 2010-05-24 WO PCT/JP2010/058725 patent/WO2010150610A1/en active Application Filing
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11314365A (en) * | 1998-05-08 | 1999-11-16 | Seiko Epson Corp | Ink jet recording head and ink jet recorder |
JP2000141644A (en) * | 1998-11-05 | 2000-05-23 | Seiko Epson Corp | Ink jet recording head and ink jet recorded |
JP2001320100A (en) * | 1999-10-01 | 2001-11-16 | Ngk Insulators Ltd | Piezoelectric/electrostrictive device and method of manufacturer |
JP2002033530A (en) * | 1999-10-01 | 2002-01-31 | Ngk Insulators Ltd | Piezoelectric/electrostrictive device and manufacturing method thereof |
JP2002218771A (en) * | 2001-01-24 | 2002-08-02 | Matsushita Electric Ind Co Ltd | Actuator and manufacture of the same |
JP2004066571A (en) * | 2002-08-05 | 2004-03-04 | Ricoh Co Ltd | Liquid drop ejecting head, ink cartridge, and image recorder |
JP2004209733A (en) * | 2002-12-27 | 2004-07-29 | Canon Inc | Manufacturing method for inkjet head |
JP2004260158A (en) * | 2003-02-07 | 2004-09-16 | Canon Inc | Dielectric film element, piezoelectric actuator using same, and ink jet head |
JP2006141082A (en) * | 2004-11-10 | 2006-06-01 | Matsushita Electric Ind Co Ltd | Small piezoelectric element, and small drive device |
JP2008042191A (en) * | 2006-07-14 | 2008-02-21 | Canon Inc | Piezoelectric element and manufacturing method thereof, and ink jet head |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014046582A (en) * | 2012-08-31 | 2014-03-17 | Toshiba Tec Corp | Inkjet head and image forming apparatus |
JP2018154121A (en) * | 2017-03-17 | 2018-10-04 | 株式会社リコー | Liquid discharge head, liquid discharge unit, and liquid discharge device |
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