JP2002260857A - Forming method of light-emitting device and thin film forming device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a forming method of a light-emitting device in which a good quality image display can be made by inspecting and repairing the short circuit at the defective part of a light-emitting device. SOLUTION: When a voltage of reverse bias is impressed on the light-emitting element having a defective part, a reverse current is flown at the defective part. The emission generated from this reverse current is measured by an emission microscope and the defective part is identified, and the defective part is insulated by irradiating a laser beam and, thereby, the short circuit area is repaired.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a light emitting device including a light emitting device formed on a substrate by detecting a short-circuit (short) point between a cathode and an anode, repairing the short-circuited portion, and repairing the short-circuited portion. About. Further, the present invention relates to a method for detecting a short-circuited portion in a light-emitting module in which an IC is mounted on a light-emitting panel manufactured by sealing a light-emitting element formed on a substrate with a sealing substrate, repairing the short-circuited portion, and manufacturing a light-emitting device. In this specification, the light-emitting panel and the light-emitting module are collectively referred to as a light-emitting device. Further, the present invention includes a thin film forming apparatus capable of detecting a short-circuited portion, repairing the detected portion, and manufacturing a light-emitting device.

[0002]

2. Description of the Related Art A light-emitting element emits light by itself and has high visibility, and is not required for a backlight required for a liquid crystal display device (LCD). Therefore, in recent years, light emitting devices using light emitting elements
It is attracting attention as an alternative to T and LCD.

[0003] A light-emitting element has a layer containing an organic compound capable of obtaining electroluminescence (electroluminescence generated by applying an electric field) (hereinafter, referred to as an organic compound layer), an anode, and a cathode. The luminescence of the organic compound includes light emission (fluorescence) when returning from the singlet excited state to the ground state and light emission (phosphorescence) when returning from the triplet excited state to the ground state. The detection and repair method is applicable to a light emitting device using either light emission.

[0004] In this specification, all layers provided between the anode and the cathode are defined as organic compound layers. Specifically, the organic compound layer includes a light emitting layer, a hole injection layer, an electron injection layer,
It includes a hole transport layer, an electron transport layer, and the like. Basically, a light-emitting element has a structure in which an anode / light-emitting layer / cathode is laminated in this order. In addition to this structure, an anode / hole injection layer / light-emitting layer / cathode or an anode / hole injection layer / Light-emitting layer / electron transport layer / cathode and the like.

[0005] In this specification, an element formed by an anode, an organic compound layer and a cathode is called a light emitting element.

[0006]

A light emitting device is formed by forming an organic compound layer between an anode and a cathode. When a voltage is applied to the electrode of the light-emitting element, electrons are injected from the cathode into the organic compound layer, and holes are injected from the anode into the organic compound layer.

[0007] Then, in the organic compound layer, the organic compound forming the organic compound layer emits light by the energy generated by the recombination of electrons and holes.

However, when a part of the organic compound layer is lost for some reason, the light emitting element is extinguished because a short circuit occurs between the cathode and the anode, and a leak current flows in the shorted portion.

The cause of the loss of the organic compound layer is that one of the electrodes formed before the formation of the organic compound layer is not flattened, so that the organic compound layer is not uniformly formed and is lost. In some cases, the organic compound layer is not sufficiently formed on the electrode due to dust or dust on the electrode. Then, when the other electrode is formed on the organic compound layer having these defective portions, a short circuit occurs between the cathode and the anode in a portion where the organic compound layer is not formed (a defective portion).

FIG. 10A schematically shows a cross-sectional view of the light emitting element 1104. An organic compound layer 11 is formed on the anode 1101.
02, a cathode 1103 is formed over the organic compound layer 1102, and a light emitting element 1104 is formed. Note that when the light-emitting element 1104 has a defective portion 1105 in which a part of the organic compound layer 1102 is missing, when the cathode 1103 is formed over the organic compound layer 1102, the anode 1101 and the cathode 1
Short-circuit occurs because it is formed in contact with 103.

In the present specification, the normal portion 1106 having an organic compound layer between both electrodes is referred to as an organic compound layer 1.
A portion where two electrodes are in contact with each other in the missing portion of 102 will be referred to as a defective portion 1105.

Normally, the light emitting element 1104 is connected to the external power supply 11
Light emission is shown when a power supply voltage is applied from 07.

FIG. 10B shows a case where the light emitting element 1104 does not have the defective portion 1105, that is, FIG.
The case where only the normal part 1106 in FIG.
In this case, the light emitting element 1104 and the power supply voltage E _ori from an external power source 1107 is applied, the voltage E _dio applied. The wiring resistance at this time is represented by R _wir , and the voltage applied to the wiring is represented by E _wir .

On the other hand, FIG. 10C shows a case where the light emitting element 1104 has the defective portion 1105 shown in FIG. In this case, the external power supply 110
When 7 from the voltage E _ori is applied, the voltage applied to the normal portion 1106 is smaller than the voltage E _dio shown in FIG. 10 (B), the E _'dio. This is because the voltage drop in the wiring by a current I _def flowing in the defect portion 1105 occurs, the voltage of the wiring is by decreasing the E _{w ir} to E _'wir.

In the light emitting element, when a forward bias is applied to both electrodes and a current I _ori flows through the organic compound layer, light emission is obtained in the organic compound layer. In such a case, the light emitting element does not emit light.

That is, when a forward bias is applied to a light emitting element including a defective portion, practically most of the current flows to the defective portion, and therefore almost no current I _dio flows through the normal portion. As described above, in a light-emitting element having a defective portion, current hardly flows through the organic compound layer, so that the light-emitting element causes a decrease in luminance and extinction.

[0017] In addition to a decrease in luminance and extinction of the light emitting element, if a short circuit occurs at a defective portion, a current always flows through the defective portion, thereby promoting the deterioration of the organic compound layer near the defective portion.

Further, the quenching of the light emitting element by the defective portion 1105 causes a decrease in display brightness in a pixel portion in which a plurality of pixels having the light emitting element are formed, and increases power consumption due to generation of a leak current. There are problems such as letting them do.

In view of the above problems, the present invention inspects a defective portion in a light emitting element, repairs the defective portion when a defective portion is detected, and manufactures a light emitting device, and a light emitting device using this method. It is an object of the present invention to provide a thin film forming apparatus for manufacturing a thin film.

[0020]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and utilizes the fact that when a reverse bias is applied to a light emitting element, a current flows through a defective portion thereof.

FIG. 1A shows a pixel portion 101 formed on a substrate, in which a plurality of pixels 102 are formed. These pixels each have a light emitting element formed of an anode, a cathode, and an organic compound layer.

When these light emitting elements have the defective portion 103, the sectional structure is as shown in FIG. 1B, but a voltage is applied to both electrodes of the light emitting element from the external power supply 108. Then, a current flows through the defective portion 103. But,
When a current flows through the defective portion 103, the current hardly flows through the organic compound layer 107, so that the light emitting element 104 is extinguished.

Therefore, in the present invention, the cathode 105, the anode 1
Light-Emitting Element 104 Consisting of Organic Compound 06 and Organic Compound Layer 107
, A reverse bias is applied from the external power supply 108.

At this time, the defective portion 103 of the light emitting element 104
In this case, the cathode 105 and the anode 106 are short-circuited because the organic compound layer 107 is missing. That is, when a reverse bias is applied, a current flows through the defective portion 103 of the light emitting element 104. On the other hand, almost no current flows through the light emitting element 104 having no defective portion 103.

In the present invention, a current is applied only to the defective portion 103 by applying a reverse bias, and the current flowing at this time is detected, thereby specifying the position of the defective portion 103.

Next, the specified defect 103 is irradiated with a laser to insulate the portion where the cathode and the anode are short-circuited in the defect 103. By making the insulation, a current flowing when a reverse bias is applied can be reduced or completely prevented. In this specification,
The current flowing when a reverse bias is applied is called a reverse current.

As described above, by insulating the short-circuited portion, it is possible to prevent a leak current of the defective portion 103 generated when a forward bias is applied, whereby a desired current flows through the organic compound layer 107. Light emitting element 104
Can be emitted at a desired luminance.

Further, in the present invention, a film forming chamber for forming an organic compound layer and a passivation film of a light emitting element, a processing chamber for sealing, and a position of a defective portion are specified by using the present invention. A light-emitting device can be manufactured using a thin film formation apparatus having a processing chamber for repair. By manufacturing a light emitting device using this thin film forming apparatus,
After the light emitting element is formed, a defective portion is repaired before sealing the light emitting element, whereby a light emitting device can be manufactured.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Here, as an embodiment of the present invention, a method of inspecting a defective portion and a method of repairing a detected defective portion in an active matrix type light emitting device will be described.
This will be described with reference to FIG. Note that the present invention can be similarly applied to a passive light emitting device.

FIG. 2A shows a TFT 20 on a substrate 201.
2 is formed, a pixel electrode 203 (anode) electrically connected to the TFT 202, an organic compound layer 204 formed on the pixel electrode 203, and a cathode 205 are formed. It is shown upside down.
That is, each pixel 102 shown in FIG.
(A) an anode 205, an organic compound layer 204,
And a light emitting element 206 including a cathode 205 is formed,
The pixel portion 101 is formed.

Further, after the light emitting element 206 is formed, a space 208 is provided inside, and a sealing structure is formed by the sealing substrate 209. Note that here, a light-emitting device in which a sealing structure is formed is shown;
Is completed (before the light emitting element is sealed), the defect 2
It is possible to perform the inspection and repair of 07. The method in this case will be described in detail in a later embodiment.

In the light-emitting element, a portion where the organic compound layer 204 is deficient and the cathode 205 and the anode 203 are short-circuited as shown at 207 becomes a defective portion 207. Even when a forward bias is applied from the above and a current flows, no light is emitted because the current flows to the defective portion 207 more than the organic compound layer 204.

Therefore, in the present invention, a current is applied to the defective portion 207 by applying a reverse bias from an external power supply, and the defective portion 207 is specified by observing light emission generated by the current flowing at this time.

Specifically, a reverse bias is applied to a short-circuit portion between the electrodes, a current is caused to flow, and the number of photons (photons) in light emission generated from the current is observed and measured with an emission microscope, whereby the short-circuit occurs. Defective part 2
07 is specified. Note that the reverse bias applied to the light emitting element 206 at this time is in the range of 1 to 15V.
Note that an emission microscope is an apparatus that measures the number of photons of light emission generated by a current flowing when a reverse bias is applied, using an optical microscope and an ultra-sensitive camera (photon counting camera). In the embodiment of the present invention, a hot electron device (C3200 series) manufactured by Hamamatsu Photonics is used as an emission microscope.

This camera is compatible with I.P. I (Image Intensifie
r) and an imaging camera, and can capture extremely weak light. The light emission detected here is taken into the image processor as a video signal, subjected to image processing, and
It is displayed on a V monitor (CRT: Cathode Ray Tube).
At this time, it is possible to specify a light emitting portion by overlapping with a pattern image on the substrate which has been photographed in advance.

In general, it is known that when a current leak occurs due to a short circuit between electrodes, light emission of a wide continuous spectrum from visible light to infrared light is detected. Since the ultra-high sensitivity camera (photon counting camera) used in the present invention utilizes the fact that a crystal containing Si transmits infrared light having a wavelength longer than the wavelength corresponding to its band gap energy, a reverse bias is applied. It is possible to detect a current flowing through the defective portion 207 when applied, via the substrate.

FIG. 2B shows a method of specifying the position of the defective portion 207 and repairing the pixel 208 having the defective portion 207 among a plurality of pixels shown in FIG. 2A. explain.

The substrate 201 is provided on the XYZ stage 210, and a reverse bias is applied from an external power supply 211 to the light emitting element 206 formed on the substrate 201 via the FPC 212. At this time, the defective portion 2 of the light emitting element 206
07 (current in the reverse direction) flows.

The current flowing here involves light emission 213.
The photons that form this light emission 213 are shutter (1) 2
When 14 is opened, it is detected by the ultra-high sensitivity camera 217 (photon counting camera) via the condenser lens 215 and the half mirror 216, and is subjected to image processing by the image processing mechanism 218 (image processor) as a video signal. Is displayed on the color monitor 219 (CRT). At this time, the shutter (2) 222 is closed.

In the color monitor 219, the current flowing through the defective portion of the light emitting element of the pixel is displayed in color as the distribution of the number of photons of light generated by the current. As a result, the position can be specified.

In the present invention, the ultra-high sensitivity camera 217
Is connected to the positioning mechanism 221, and the positioning mechanism 221 moves the XYZ stage 210 to the position where the defect 207 is irradiated with the laser from the position data of the defect 207 specified by the ultra-high sensitivity camera 217. Send a signal for Thereby, the defective portion 207 is moved to a position where the laser is irradiated.

Next, the shutter (1) 214 is closed, the shutter (2) 222 is opened, and the laser irradiation mechanism 22 is opened.
Laser 224 from No. 3 is incident. In addition, laser 2
24 irradiates the defective portion 207 via the half mirror 216 and the condenser lens 215.

As described above, the defective portion 20 specified
7 is irradiated with a laser beam to repair the defective portion 207. Specifically, the cathode 20 in the defective portion 207
The short-circuited portion between the anode 5 and the anode 203 is insulated by irradiating a laser, and the space between the cathode 205 and the anode 203 is insulated.

In order to insulate the defective portion 207, a material for forming the cathode 205 or the anode 203 is made into an oxide by irradiating the material with a laser, or the short portion of the defective portion 207 is irradiated with a laser. There is a method of making the insulation by physically separating the two.
In the present invention, any insulation can be achieved by adjusting the power of the laser.

When irradiating a laser in the present invention, it is necessary to adjust the irradiation power and the irradiation time of the laser so as not to irradiate the anode 203 and destroy its function.

The laser used in the present invention includes:
Dye lasers are preferred. When a dye laser is used, a wavelength range of 375 to 900 nm can be used, and a laser dye such as coumarin or rhodamine can be used depending on the wavelength range to be used. The laser dye used at this time may use a known dye. Further, the diameter of the laser beam used in the present invention is preferably larger than the diameter of the defect portion 207 to be irradiated, and specifically, is preferably 1.0 to 3.0 μm.

As described above, when a forward bias is applied to a light emitting element forming a pixel of a light emitting device and a defective portion 207 exists in the light emitting element 206, a leak current is generated at a short-circuit point between the anode 203 and the cathode 205. The current hardly flows through the organic compound layer 204 of the light emitting element 206, and the light emitting element 2
06 is extinguished. That is, this pixel is extinguished.

Therefore, in the present invention, first, the light emitting element 2
A current is caused to flow through the defective portion 207 by applying a reverse bias to the reference numeral 06, and the position of the defective portion 207 is specified by detecting light generated from the current. By insulating and repairing, the pixel can emit light again when a forward bias is applied.

[0049]

Embodiment 1 In this embodiment, an example in which the present invention is applied to an active matrix light emitting device having two thin film transistors (TFTs) in each pixel will be described.

FIG. 3 is a circuit diagram of a pixel in a light emitting device which has been inspected and repaired at a defective portion of a light emitting element using the present invention. Each pixel has a source signal line Si (i is 1 to
x), a current supply line Vi (i is any one of 1 to x), and a gate signal line Gj (j is any one of 1 to y).

Each pixel is provided with a switching TFT 3
01, a current control TFT 302, and a light emitting element 303
And a capacitor 304.

The gate electrode of the switching TFT 301 is connected to a gate signal line (Gj). The source and drain regions of the switching TFT 301 are
One is connected to the source signal line (Si), and the other is connected to the gate electrode of the current controlling TFT 302.

The source region of the current control TFT 302 is connected to the current supply line (Vi), and the drain region is connected to one of the two electrodes of the light emitting element 303. The other of the two electrodes of the light emitting element 303 that is not connected to the drain region of the current controlling TFT 302 is connected to the opposite power supply 307.

Note that, of the two electrodes of the light emitting element 303, an electrode connected to the drain region of the current control TFT 302 is called a pixel electrode, and an electrode connected to the counter power supply 307 is called a counter electrode.

The capacitor 304 is provided with a current control TF
It is formed between the gate electrode of T302 and the current supply line Vi.

FIG. 4A shows a pixel portion of a light emitting device having a plurality of pixels shown in FIG. The pixel portion 306 has source signal lines S1 to Sx, current supply lines V1 to Vx, and gate signal lines G1 to Gy. In the pixel portion 306, a plurality of pixels 305 are formed in a matrix.

FIG. 4B shows the operation of the TFT in each pixel when inspecting and specifying a defective portion of the light emitting element 303.
The height of the voltage input to the current supply line Vi and the counter electrode is shown. When inspecting a defective portion of the light emitting element 303, a switching TFT 301 and a current controlling TFT 3 of each pixel are used.
02 are both turned on. And the current supply line V
The voltage of i and the voltage of the counter electrode are kept constant, and a predetermined reverse bias is applied to the light emitting element. The voltage of the counter electrode is
When the pixel electrode is an anode, a voltage higher than the voltage of the current supply line Vi is applied as shown in FIG. 4B, but when the pixel electrode is a cathode, a voltage lower than the voltage of the current supply line Vi is applied. Will be applied.

In this embodiment, the case where the pixel electrode is an anode and the counter electrode is a cathode is shown. Specifically, a voltage of +1 V is applied to the anode, and a voltage of +9 V is applied to the cathode.

As described above, when a low voltage is applied to the anode of the light emitting element and a high voltage is applied to the cathode, current flows only to the defective portion on the light emitting element. With the current flowing through the defective portion in this manner, the defective portion is identified by observing the current with an emission microscope.

An emission microscope is an apparatus that can measure the number of photons (Photon) that form light emission generated when a current flows. It is set in advance that the display is displayed in different colors for each number of photons measured by the emission microscope. Thus, the position of the defective portion can be specified from the current flowing through the defective portion when a reverse bias is applied.

Further, since the emission microscope captures an image of the light emitting element in advance, the defective portion can be specified accurately by displaying the measured number of photons in a color-coded manner and superimposing them.

Here, FIG. 5 shows a state in which a light emitting element in a pixel portion is actually observed using an emission microscope, and a defective portion is specified thereby. In FIG. 5, a circled portion is an actual defective portion, which is usually displayed in a color monitor in a color picture in a black and white pixel portion of an image photograph.

The color-coded display of the number of photons used here means that the number of photons forming light generated from the current flowing through the defective portion is displayed in different colors. In other words, when the number of detected photons is small, they are displayed by the distribution of blue points, when they are slightly larger, they are displayed by the distribution of yellow points, and when they are more, they are displayed by the distribution of red points. Display.

When the defect portion is specified by the emission microscope, the laser is irradiated from the laser irradiation mechanism while observing the defect portion with a monitor, thereby insulating the short portion at the defect portion, thereby repairing the defect portion. It can be performed.

In this embodiment, a dye laser is used. More specifically, a defect is irradiated with a laser having a wavelength of 440 nm, a power of 20 mJ, coumarin 440 as a laser dye, and a beam diameter of 2.3 μm.

In the insulation of the short-circuit portion in the present embodiment, the insulation is achieved by oxidizing the material forming the cathode at the short-circuit portion.

The inspection and repair of the defective portion of the light emitting element may be performed simultaneously for all the pixels 305 included in the pixel portion 306, or may be performed for each line or each pixel.

As described above, by irradiating a laser beam to the specified defective portion of the light emitting element to make it insulated, a current is applied to the organic compound layer of the light emitting element when a forward bias voltage is applied to the light emitting element. The organic compound layer can emit light.

Since a current always flows in the defective portion, the organic compound layer existing around the defective portion is easily deteriorated. However, by making this into an insulating layer, a leak current can be prevented, so that deterioration of the organic compound layer existing around the defective portion can be prevented.

As described above, after inspecting and specifying the defective portion of the light emitting element included in the light emitting device, the light emitting element which has been quenched due to the presence of the defective portion can be caused to emit light again by repairing by laser irradiation.

The present invention described above is not only applicable to a light emitting device having the above configuration. The present invention can be used for a light emitting device having any structure. Note that the TFT included in the light emitting device may be a TFT using an organic semiconductor.

[Embodiment 2] In this embodiment, when an organic compound layer and a cathode were formed on a substrate in which a pixel electrode (anode) of a light emitting element was formed on the substrate, inspection and repair of the present invention were performed. When the light emitting element has a defect, repair is performed immediately after forming the cathode (before sealing), and all the steps up to the point of performing sealing are performed in the same apparatus. Will be described. In this embodiment, a light emitting element having a structure in which a pixel electrode serving as an anode is formed on a substrate, an organic compound layer is formed thereon, and then a cathode is formed has been described. It is also possible to implement a light emitting element having a structure in which a pixel electrode serving as a cathode is formed, an organic compound layer is formed thereon, and an anode is further formed. However, inspection and repair of a defective portion is performed from the anode side in any structure.

A film forming apparatus used in this embodiment will be described with reference to FIG. In FIG. 6, reference numeral 601 denotes a transfer chamber, and the transfer chamber 601 is provided with a transfer mechanism (A) 602 for transferring the substrate 603. The transfer chamber 601 has a reduced pressure atmosphere, and is connected to each processing chamber by a gate. The transfer of the substrate to each processing chamber is performed by the transfer mechanism (A) 602 when the gate is opened.
In order to decompress the transfer chamber 601, an exhaust pump such as a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), or a cryopump can be used. To obtain this, a magnetically levitated turbo molecular pump is preferable.

Hereinafter, each processing chamber will be described.
Since the transfer chamber 601 has a reduced pressure atmosphere, the transfer chamber 6
All of the processing chambers directly connected to 01 are provided with exhaust pumps (not shown). As the exhaust pump, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type) or a cryopump described above is used, and a magnetic levitation type turbo molecular pump is also preferable here.

First, reference numeral 604 denotes a load chamber for setting (installing) a substrate, and also functions as an unload chamber. The load chamber 604 is connected to the transfer chamber 60 by the gate 600a.
1 and a carrier (not shown) on which the substrate 603 is set is disposed here. Note that the load chamber 604 may be divided into a room for carrying in the substrate and a room for carrying out the substrate. The load chamber 604 includes the above-described exhaust pump and a purge line for introducing high-purity nitrogen gas or rare gas. Note that a turbo molecular pump is desirable as the exhaust pump. Further, the purge line is provided with a gas purifier so that impurities (oxygen and water) of the gas introduced into the apparatus are removed in advance.

In this embodiment, as the substrate 603, a substrate on which a transparent conductive film serving as an anode of a light emitting element is formed is used. In this embodiment, the substrate 603 is set on a carrier with the surface on which the film is to be formed facing downward. This is for facilitating a face-down method (also referred to as a deposit-up method) when a film is formed by a vapor deposition method later. The face-down method refers to a method in which a film is formed in a state where a film-forming surface of a substrate faces downward. According to this method, adhesion of dust and the like can be suppressed.

Next, what is indicated by 605 is a processing chamber (hereinafter referred to as a pre-processing chamber) for processing the surface of the anode or the cathode (the anode in this embodiment) of the light-emitting element.
5 is connected to the transfer chamber 601 by a gate 600b.
The pretreatment chamber can be variously changed depending on the manufacturing process of the light-emitting element. In this embodiment, the surface of the anode made of a transparent conductive film is irradiated with ultraviolet light in oxygen in a range of 100 to 120.
Allow to heat at ° C. Such a pretreatment is effective when treating the anode surface of the light emitting element.

As another pretreatment method, a method of heating at 200 to 400 ° C. while irradiating plasma in oxygen or hydrogen is also effective. In this case, a mechanism capable of performing plasma treatment and heat treatment is provided. What is necessary is just to prepare for a pre-processing room.

Next, reference numeral 606 denotes a film forming chamber for forming an organic compound film by a vapor deposition method, which is called a film forming chamber (A). The film forming chamber (A) 606 is connected to the transfer chamber 60 via the gate 600c.
Connected to 1.

In this embodiment, an organic compound layer for forming a light emitting element is formed in a film forming section 607 in a film forming chamber (A) 606. In this embodiment, an organic compound layer that emits red, green, and blue light is formed. Therefore, the plurality of evaporation sources provided in the film formation chamber (A) 606 are provided with the organic compounds forming these organic compound layers.

The organic compound layer is formed by laminating a plurality of layers such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. In this embodiment, the organic compound layer that emits light of each color is formed by changing only the material forming the light emitting layer, and all the other layers are formed using the same material.

For the hole injection layer, copper phthalocyanine or the like can be used. For the hole transport layer, MTDA
TA (4,4 ', 4''-tris (3-methylphenylphenylamino) triph
enylamine) and α-NPD can be used, but other known materials can also be used.

The light-emitting layer that emits red light includes A
It can be formed using lq ₃ doped with DCM. In addition, Eu complex (Eu (DCM) ₃
(Phen) adds D to aluminum quinolylato complex (Alq ₃ )
A material using CM-1 as a dopant can be used, but other known materials can also be used.

The light emitting layer that emits green light is C
It can be formed by co-evaporating BP and Ir (ppy) ₃ . In addition, aluminum quinolinolato complex (Alq ₃ ) and benzoquinolinolato beryllium complex (BeBq) can be used. Furthermore, a material using a material such as coumarin 6 or quinacridone as a dopant for the aluminum quinolylato complex (Alq ₃ ) is also possible, but other known materials can also be used.

Further, as a light emitting layer that emits blue light,
DPVBi which is a distyryl derivative, a zinc complex having an azomethine compound as a ligand, and a substance obtained by doping perylene into DPVBi can be used, but other known materials may be used.

After the formation of the light emitting layer, an electron transport layer or an electron injection layer may be formed. Note that a material such as a 1,3,4-oxadiazole derivative or a 1,2,4-triazole derivative (TAZ) can be used for the electron transporting layer. Further, as the buffer layer 206, a material such as lithium fluoride (LiF), aluminum oxide (Al ₂ O ₃ ), or lithium acetylacetonate (Liacac) may be used, but other known materials can be used. is there.

The film forming chamber (A) 606 has a gate 600
It is connected to the material exchange chamber 614 via f. The material exchange chamber 614 is provided with a heater for heating the exchanged material. By heating the material in advance, impurities such as water can be removed. The temperature to add at this time is 200
It is desirable that the temperature be lower than or equal to ° C. In addition, the material exchange room 614
Is provided with an exhaust pump capable of reducing the pressure inside, so that after evaporating material is added or replaced from the outside and subjected to heat treatment, the pressure inside is reduced. When the same pressure state as in the film forming chamber is reached, the gate 6
Opened at 00f, an evaporation source can be provided in the evaporation source inside the film formation chamber. Note that the evaporation material is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

Next, 608 is a spin coating method (coating method).
Is a film forming chamber for forming a film of an organic compound, and is referred to as a film forming chamber (B). Note that a vacuum exhaust processing chamber 610 is provided between the film formation chamber (B) 608 and the transfer chamber (A) 601 so that only the film formation chamber (B) 608 can be processed at normal pressure (atmospheric pressure). The following shows the configuration.

In this embodiment, since the inside of the thin film forming apparatus is all under reduced pressure, when a polymer material is formed by a coating method, it is filled with an inert gas such as nitrogen or a rare gas. Therefore, in order to transfer the substrate to the film formation chamber 608, the pressure difference between the film formation chamber 608 and the inside of the other film formation apparatus must be overcome.

Therefore, in the case of depositing a polymer material in this embodiment, first, the pressure in the vacuum exhaust processing chamber 610 is reduced to the same pressure as the transfer chamber (A) 601, and the gate 600 d is opened in this state. Convey the substrate. Then, after closing the gate 600d, the inside of the evacuation processing chamber 610 is purged with an inert gas.
g is opened and the substrate is transferred to the film formation chamber 608. Here, the transfer may be performed for each stage together with the substrate, or may be performed by a dedicated transfer unit.

As the high molecular weight organic compound used here, polyparaphenylene vinylene (PPV) type, polyvinyl carbazole (PVK) type, polyfluorene type, polythiophene derivative (for example, PEDOT), and other known high molecular weight organic compounds can be used. It is possible to use molecular organic compounds.

As described above, the film forming section 609 of the film forming chamber 608
A hole injection layer is formed by spin coating. Note that the film formation chamber 608 is provided with a heating mechanism,
A function of performing drying after film formation may be provided.

When the film formation of the high molecular weight organic compound is completed,
The gate 600g is opened, the substrate is transferred to the processing chamber 610 for evacuation, and evacuation is performed with the gate 600g and the gate 600d closed. Thus, the processing chamber 61 for evacuation
When 0 reaches the same reduced pressure as the transfer chamber (A) 601, the gate 600 d is opened and the substrate is transferred to the transfer chamber (A) 601.
Conveyed to.

The film forming chamber (B) 608 has a gate 600
h, it is connected to the material exchange chamber 615. The material exchange chamber 615 is provided with a heater for heating the exchanged material. By heating the material in advance, impurities such as water can be removed. The temperature to add at this time is 200
It is desirable that the temperature be lower than or equal to ° C. The material exchange room 615
Is provided with an exhaust pump capable of reducing the pressure inside, so that after evaporating material is added or replaced from the outside and subjected to heat treatment, the pressure inside is reduced. When the same pressure state as in the film forming chamber is reached, the gate 6
After opening 00h, an evaporation source can be provided in the evaporation source inside the film formation chamber. Note that the evaporation material is provided in an evaporation source in the film formation chamber by a transport mechanism or the like.

As described above, in the present embodiment, the organic compound layer can be formed by using the vapor deposition method or the spin coating method, and further, by using these methods. The organic compound layer may be formed by stacking a plurality of the layers.

Next, reference numeral 611 denotes a film forming chamber for forming a conductive film (metal film serving as a cathode in this embodiment) serving as an anode or a cathode of a light emitting element by a vapor deposition method.
Call. The film formation chamber (C) 611 is connected to the transfer chamber 601 via the gate 600e. In this embodiment, an Al—Li alloy film (an alloy film of aluminum and lithium) is formed as a conductive film serving as a cathode of a light-emitting element in a film formation section 612 in a film formation chamber (C) 611. In addition, 1 of the periodic table
It is also possible to co-evaporate an element belonging to Group 2 or Group 2 with aluminum. Co-evaporation refers to an evaporation method in which a deposition cell is heated at the same time and different substances are mixed in a film formation stage.

Note that providing a CCD (Charge Coupled Device) known as an image sensor in the film formation chambers (A) 606 and (C) 611 requires a metal mask. This is preferable because it enables accurate alignment between the substrate and the metal mask when forming a film by using the method.

Further, as an exhaust pump provided in the film formation chamber (A) 606, the vacuum exhaust processing chamber 610, and the film formation chamber (C) 611, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), or a cryogenic pump Although a pump or the like can be used, a cryopump and a dry pump are desirable in this embodiment.

The pressure in the film forming chamber (A) 606, the processing chamber 610 for evacuation and the film forming chamber (C) 611 is reduced by an exhaust pump. At this time, the ultimate vacuum degree is 10 ⁻⁶ Pa
It is desirable that this is the case. In order to obtain such a degree of vacuum, it is effective to reduce the surface area of the inside of the film formation chamber by electrolytic polishing.

The transfer chamber (A) 601 has a gate 600i.
Is connected to the repair room 613 via the. In the repair chamber 613, a defect portion of the light emitting element formed up to the cathode is specified by the defect detection mechanism 622, and further, the laser is irradiated to the defect portion by the laser irradiation mechanism 623 to insulate the defect portion. In this embodiment, an emission microscope is used as the defect detection mechanism 622 for specifying the position of the defect.

When a defective portion is specified by an emission microscope, a current is allowed to flow through the defective portion when a reverse bias is applied to the light emitting element and there is a defective portion. The reverse bias applied when
It is applied in the range of 15V.

The substrate in which the defective portion of the light emitting element has been repaired in the repair chamber 613 is transferred to the transfer chamber (B) 61 connected to the repair chamber 613 via the gate 600j.
6. Further, it is connected to the transfer chamber (B) 616 via a gate 600l, and is provided with a CVD (chemical vapor desorption).
position) A compound containing silicon such as silicon nitride or silicon oxide or a DLC containing carbon on these compounds is transported to a film forming chamber (D) 617 equipped with a device and has a defect repaired thereon. (Diamond Like Carbon) An insulating film in which a film is laminated is formed.

Note that the DLC (Diamond Like Carbon) film is an amorphous film in which diamond bonds (sp ³ bonds) and graphite bonds (SP ² bonds) are mixed. In addition, CV
In a film forming chamber equipped with a D (chemical vapor deposition) apparatus, oxygen (O ₂ ), hydrogen (H ₂ ), methane (C
H ₄ ), ammonia (NH ₃ ), and silane (SiH ₄ ) can be used. Further, the CVD apparatus has parallel plate type electrodes, and has a frequency of 13.56 in the RF power supply.
の も の 60 MHz can be used.

Although not shown in this embodiment, a sputtering method (or a sputtering method) is used.
It is also possible to provide a film forming chamber for forming a film by using the film forming apparatus described in this embodiment. This is because, when an element having a structure in which an organic compound layer is formed on a pixel electrode serving as a cathode and then an anode is formed, film formation by sputtering is effective. Note that the atmosphere in which oxygen is added to argon is set in the deposition chamber during deposition to control the oxygen concentration in the deposited film and form a low-resistance film with high transmittance. it can. Also,
Like the other film formation chambers, the film formation chamber is desirably isolated from the transfer chamber by a gate.

In the case where a film formation chamber for performing sputtering is provided, a mechanism for controlling the temperature of the film formation substrate may be provided. Note that the film formation substrate is preferably maintained at 20 to 150 ° C. Further, as an exhaust pump provided in the film forming chamber, a dry pump, a mechanical booster pump, a turbo molecular pump (magnetic levitation type), a cryopump, or the like can be used. In this embodiment, a turbo molecular pump (magnetic levitation) is used. Type) and a dry pump are preferred.

Next, reference numeral 618 denotes a sealing chamber (also referred to as a sealing chamber or a glove box), which is connected to the transfer chamber (B) 616 via the gate 600k. Sealing chamber 618
Then, processing for finally sealing the light emitting element in the closed space is performed. This process is a process for protecting the formed light-emitting element from oxygen and moisture, and uses a method of mechanically encapsulating with a cover material or encapsulating with a thermosetting resin or an ultraviolet light curable resin.

As the cover material, glass, ceramics, plastic or metal can be used, but when light is emitted to the cover material side, it must be translucent. Further, the cover material and the substrate on which the light emitting element is formed are attached to each other using a sealing material such as a thermosetting resin or an ultraviolet light curable resin, and the resin is cured by heat treatment or ultraviolet light irradiation treatment to form a closed space. To form It is also effective to provide a hygroscopic material represented by barium oxide in this closed space.

Further, the space between the cover member and the substrate on which the light emitting element is formed can be filled with a thermosetting resin or an ultraviolet curable resin. In this case, it is effective to add a hygroscopic material represented by barium oxide to the thermosetting resin or the ultraviolet curable resin.

In the film forming apparatus shown in FIG.
A mechanism 619 for irradiating ultraviolet light (hereinafter referred to as an ultraviolet light irradiating mechanism) 619 is provided inside, and the ultraviolet curable resin is cured by the ultraviolet light emitted from the ultraviolet light irradiating mechanism 619. ing. Also, the sealing chamber 618
It is also possible to reduce the pressure by attaching an exhaust pump. When the encapsulation step is performed mechanically by a robot operation, mixing of oxygen and moisture can be prevented by performing the operation under reduced pressure. In addition, specifically, it is desirable that the concentration of oxygen and water be 0.3 ppm or less. Conversely, the inside of the sealing chamber 618 can be pressurized.
In this case, pressurization is performed while purging with a high-purity nitrogen gas or a rare gas to prevent entry of oxygen or the like from outside air.

Next, a delivery room (pass box) 620 is connected to the sealing room 618. A transfer mechanism (C) 621 is provided in the delivery chamber 620, and transports the substrate in which the sealing of the light emitting element is completed in the sealing chamber 618 to the delivery chamber 620. The delivery chamber 620 can also be reduced in pressure by attaching an exhaust pump. The delivery chamber 620 is a facility for preventing the sealing chamber 618 from being directly exposed to the outside air, and takes out the substrate therefrom. In addition, a member supply chamber for supplying a member used in the sealing chamber 618 can be provided.

As described above, by using the film forming apparatus shown in FIG. 6, a defective portion can be repaired before the light emitting element is sealed, and the light emitting element is completely sealed in the closed space. Therefore, a highly reliable light-emitting device can be manufactured.

[Embodiment 3] In this embodiment, characteristics observed by an emission microscope when a reverse bias voltage is actually applied to a light emitting element having a defective portion will be described.

In the light emitting device used in this example, copper phthalocyanine was used as a hole injection layer on an anode made of a compound of indium oxide and tin oxide (ITO).
Next, α-NPD is formed with a thickness of 40 nm by a vapor deposition method as a hole transport layer. Then, Ir (ppy) ₃ , which is a triplet compound, is used as a light emitting material for forming a light emitting layer on the hole transport layer.
Is formed to a thickness of 20 nm by co-evaporation with CBP. Further, BCP was added on the light emitting layer as an electron injection layer.
A light-emitting element is formed by forming a film of aluminum to a thickness of 0 nm and a thickness of 140 nm as a cathode. Note that in this specification, a triplet compound refers to an organic compound capable of utilizing phosphorescence from a triplet exciton for emission, and details thereof will be described in Example 4.

FIG. 11 shows voltage-current characteristics when a reverse bias voltage is applied to the light emitting element having the above structure and having a defective portion. In FIG. 11, the horizontal axis indicates the voltage when a reverse bias is applied (the difference between the voltage applied to the anode and the voltage applied to the cathode), and the vertical axis indicates the current value flowing through the light emitting element when the reverse bias is applied. (Reverse bias current). Here, the voltage value applied to the anode is fixed at +1 V, and the current value flowing through the light emitting element when the voltage applied to the cathode is changed from +1 to +7 V is measured.
That is, the current value measured here corresponds to the value of the current flowing in the defective portion of the light emitting element as referred to in this specification.

Then, the number of photons (photons) forming light emission generated by the current flowing through the defective portion is detected by the emission microscope. The photons detected by the emission microscope are distinguished by color for each number of photons and displayed. The position of the defective portion specified by the color-coded display is displayed on the CRT by superimposing the image of the light-emitting element portion taken in advance, so that the position of the defective portion existing on the light-emitting element can be accurately specified. it can.

The reverse bias voltage is 0 to -15 V
Is applied in the range of This is because if the applied reverse bias voltage is larger than this, the light emitting element may be broken.

In the inspection of a defective portion in the present invention, the height of the reverse bias voltage applied to the light emitting element and the time for applying the reverse bias are determined by the materials of the anode, the cathode, and the organic compound layer of the light emitting element and the layer thickness of the layer to be laminated. Depends on configuration.
If the reverse bias voltage is too low, the effect of the present invention cannot be obtained. Conversely, if the reverse bias voltage is too high, the deterioration of the organic compound layer is promoted or the light emitting element itself is destroyed.

The practitioner needs to appropriately set the height of the reverse bias voltage and the application time depending on the materials and structures of the anode, cathode, and organic compound layer included in the light emitting element.

The light-emitting element was repaired by irradiating a laser to a defective portion of the light-emitting element displayed on the CRT to make it insulated. The results of measuring the power consumption of the light emitting element before and after repair are shown below. In addition, the measurement was performed in all white display and all black display, respectively.

[0120]

[Table 1]

The above results are obtained by measuring the amount of current flowing through the cathode of the light emitting element when the driving voltage of the external power supply is set to 6 to 8 V, and calculating the power consumption. In the case of (1), the drive voltage after the repair is 1/5 to 1/10 as compared with the drive voltage before the repair. In other words, it is understood that the light emitting element can be repaired by insulating the defective portion by laser irradiation.

Embodiment 4 A defect is inspected by using the present invention, and when a defect is detected, in a light emitting device whose defect is repaired by laser irradiation, a triplet exciton is added to the organic compound layer. It is possible to use an organic compound (also referred to as a triplet compound) capable of utilizing phosphorescence from luminescence for light emission. A light-emitting device using an organic compound that can use phosphorescence for light emission can dramatically improve external light-emitting quantum efficiency. Thereby, low power consumption, long life, and light weight of the light emitting element can be achieved.

Here, a report is shown in which the triplet exciton is used to improve the external light emission quantum efficiency. (T.Tsutsui, C.Adac
hi, S. Saito, Photochemical Processes in Organized
Molecular Systems, ed.K. Honda, (Elsevier Sci. Pub.,
Tokyo, 1991) p.437.)

The molecular formula of the organic compound (coumarin dye) reported in the above paper is shown below.

[0125]

Embedded image

(MABaldo, DFO'Brien, Y. You, A. Shou
stikov, S. Sibley, METhompson, SRForrest, Nature
395 (1998) p.151.)

The molecular formula of the organic compound (Pt complex) reported in the above article is shown below.

[0128]

Embedded image

(MABaldo, S. Lamansky, PEBurrrows,
METhompson, SRForrest, Appl.Phys.Lett., 75 (199
9) p.4.) (T.Tsutsui, M.-J.Yang, M.Yahiro, K.Nakamu
ra, T.Watanabe, T.tsuji, Y.Fukuda, T.Wakimoto, S.Ma
yaguchi, Jpn.Appl.Phys., 38 (12B) (1999) L1502.)

The molecular formula of the organic compound (Ir complex) reported in the above article is shown below.

[0131]

Embedded image

As described above, if the phosphorescence emission from the triplet exciton can be used, the external emission quantum efficiency three to four times higher than the case of using the fluorescence emission from the singlet exciton can be realized in principle. .

The structure of this embodiment can be implemented by freely combining with any of the structures of the first to third embodiments.

[Embodiment 5] In this embodiment, a light emitting device in which a defective portion has been repaired by using the present invention will be described with reference to a sectional view shown in FIG.

In FIG. 7, a switching TFT 721 provided on a substrate 700 is formed using an n-channel TFT.

In this embodiment, the switching TFT is used.
Although a double gate structure in which two channel formation regions are formed in 721 is used, a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed may be used.

[0137] The driver circuit provided over the substrate 700 includes an n-channel TFT 723 and a p-channel TFT 724. In this embodiment, the TFT included in the driving circuit
Has a single gate structure, but may have a double gate structure or a triple gate structure.

The wirings 701 and 703 function as a source wiring of a CMOS circuit, and the wiring 702 functions as a drain wiring.
The wiring 704 functions as a wiring for electrically connecting the source wiring 708 and the source region of the switching TFT, and the wiring 705 functions as a wiring for electrically connecting the drain wiring 709 and the drain region of the switching TFT. I do.

The current controlling TFT 722 is formed using a p-channel TFT. Although the current controlling TFT 722 has a single gate structure in this embodiment, it may have a double gate structure or a triple gate structure.

A wiring 706 is a source wiring (corresponding to a current supply line) of the current control TFT, and a wiring 707 is electrically connected to the pixel electrode 710 by being superposed on the pixel electrode 710 of the current control TFT. Electrodes.

Reference numeral 710 denotes a pixel electrode (anode of a light emitting element) made of a transparent conductive film. As a transparent conductive film,
A compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Further, a material obtained by adding gallium to the transparent conductive film may be used. The pixel electrode 710 has a flat interlayer insulating film 7 before forming the wiring.
11 is formed. In this embodiment, it is very important to flatten the step due to the TFT using the flattening film 711 made of resin. Since an organic compound layer to be formed later is very thin, poor light emission may be caused by the presence of a step. Therefore, it is desirable that the organic compound layer be planarized before forming the pixel electrode so that the organic compound layer can be formed as flat as possible.

After forming the wirings 701 to 707, a bank 712 is formed as shown in FIG. Bank 712 is 100
The insulating film or the organic resin film containing silicon having a thickness of 400 nm may be formed by patterning.

Since the bank 712 is an insulating film,
Attention must be paid to electrostatic breakdown of the element during film formation.
In this embodiment, the resistivity is reduced by adding carbon particles or metal particles to the insulating film used as the material of the bank 712 to suppress the generation of static electricity. At this time, the resistivity is 1 × 10 ⁶ to 1 × 1.
The addition amount of the carbon particles and metal particles may be adjusted so as to be 0 ¹² Ωm (preferably 1 × 10 ⁸ to 1 × 10 ¹⁰ Ωm).

The organic compound layer 71 is formed on the pixel electrode 710.
3 is formed. Although only one pixel is shown in FIG. 7, in this embodiment, organic compound layers corresponding to R (red), G (green), and B (blue) are separately formed. Also,
In this embodiment, a low molecular weight organic compound is formed by a vapor deposition method.

Specifically, as the hole injection layer 713a, 2
A 0-nm-thick copper phthalocyanine (CuPc) film is provided, and a 70-nm-thick Tris-8-
It has a laminated structure in which a quinolinolato aluminum complex (Alq ₃ ) film is provided. The emission color can be controlled by adding a fluorescent dye such as quinacridone, perylene or DCM1 to Alq ₃ .

However, the above example is an example of an organic compound that can be used as the organic compound layer, and it is not necessary to limit the invention to this. An organic compound layer (a layer for performing light emission and carrier movement therefor) may be formed by freely combining a light emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer. For example, in this embodiment, an example is shown in which a low molecular weight organic compound is used as the organic compound layer, but a high molecular weight organic compound may be used. Known materials can be used for these organic compounds.

Next, a cathode 714 made of a conductive film is provided on the organic compound layer 713. In this embodiment, an alloy film of aluminum and lithium is used as the conductive film. Of course, a known MgAg film (an alloy film of magnesium and silver) may be used. As the cathode material, 1 of the periodic table
A conductive film made of an element belonging to Group II or Group II or a conductive film to which those elements are added may be used.

When the cathode 714 is formed, the light emitting element 719 is completed. The light emitting element 71 here
Reference numeral 9 denotes a capacitor formed by the pixel electrode (anode) 710, the organic compound layer 713, and the cathode 714.

It is effective to provide the passivation film 716 so as to completely cover the light emitting element 719. As the passivation film 716, an insulating film including a carbon film, a silicon nitride film, or a silicon nitride oxide film is used, and the insulating film is used in a single layer or in a stacked layer.

At this time, a film having good coverage is preferably used as a passivation film, and a carbon film, particularly, a D film is preferably used.
It is effective to use an LC (diamond-like carbon) film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C. or less, the organic compound layer 7 having low heat resistance is used.
13 can be easily formed. Also, D
The LC film has a high blocking effect against oxygen and can suppress oxidation of the organic compound layer 713. Therefore, during the subsequent sealing step, the organic compound layer 7
13 can be prevented from being oxidized.

Further, a sealing material 717 is provided on the passivation film 716, and a cover material 718 is attached. As the sealing material 717, an ultraviolet curable resin may be used, and it is effective to provide a substance having a moisture absorbing effect or a substance having an antioxidant effect inside. In this embodiment, a cover material 718 having a carbon film (preferably a diamond-like carbon film) formed on both surfaces of a glass substrate, a quartz substrate, or a plastic substrate (including a plastic film) is used.

Thus, a light emitting device having a structure as shown in FIG. 7 is completed. Note that it is effective to continuously process the steps from the formation of the bank 712 to the formation of the passivation film 716 without exposing to the atmosphere using a multi-chamber (or in-line) film forming apparatus. . Further, by further developing, it is also possible to continuously perform processing up to the step of bonding the cover material 718 without releasing to the atmosphere.

Further, the feature of the TFT in this embodiment is as follows.
The gate electrode is formed from a two-layered conductive film, and in the low-concentration impurity region provided between the channel formation region and the drain region, there is almost no difference in concentration and a gentle concentration gradient. A region (GOLD region) that overlaps the electrode and a region (L
DD area). Further, a peripheral portion of the gate insulating film, that is, a region not overlapping with the gate electrode and a region above the high-concentration impurity region are tapered.

The light emitting device of this embodiment has a hole injection layer 713
a and the light emitting layer 713b have a defective portion, and the defective portion has a defective portion 715 where the pixel electrode (anode) 710 and the cathode 714 are short-circuited. According to the present invention, the position of the defective portion 715 can be specified, and the defective portion 715 can be changed to an insulator 720 by laser irradiation. By changing the defective portion 715 to the insulator 720, leakage current in the defective portion 715 can be prevented. Therefore, the light-emitting element which has been quenched by the leak current in the defective portion 715 can emit light again.

In this embodiment, only the structure of the pixel portion and the driving circuit is shown. However, according to the manufacturing process of this embodiment, other components such as a signal dividing circuit, a D / A converter, an operational amplifier, and a γ correction circuit can be used. Can be formed on the same insulator, and a memory and a microprocessor can also be formed.

The light emitting device having the structure shown in this embodiment can be implemented by freely combining with the structures of Embodiments 1 to 4.

[Embodiment 6] In this embodiment, a case where a defective portion is repaired to a light emitting device having a structure different from that of the light emitting device shown in Embodiment 5 by using the inspection and repair method of the present invention is shown in FIG. This will be described with reference to the cross-sectional view shown in FIG.

In FIG. 8, reference numeral 811 denotes a substrate, and 812, an insulating film serving as a base (hereinafter, referred to as a base film). Substrate 8
As 11, a light-transmitting substrate, typically, a glass substrate, a quartz substrate, a glass ceramic substrate, or a crystallized glass substrate can be used. However, it must withstand the maximum processing temperature during the manufacturing process.

The base film 812 is particularly effective when a substrate containing mobile ions or a substrate having conductivity is used, but need not be provided on a quartz substrate. Base film 812
May be used as an insulating film containing silicon (silicon). Note that, in this specification, the “insulating film containing silicon” refers specifically to silicon such as a silicon oxide film, a silicon nitride film, or a silicon nitride oxide film (SiOxNy: x and y are arbitrary integers). On the other hand, it refers to an insulating film containing oxygen or nitrogen at a predetermined ratio.

Reference numeral 8201 denotes a switching TFT;
Reference numeral 2 denotes a current control TFT, each of which is an n-channel type TFT.
It is formed of FT and p-channel TFT. In the case where light emitted from the light emitting element emits light on the lower surface of the substrate (the surface on which the TFT and the organic compound layer are not provided), the above structure is preferable. However, the present invention is not limited to this configuration. Switching TFT and Current Control TFT
Is an n-channel TFT or a p-channel TFT,
Either is fine.

The switching TFT 8201 includes a source region 813, a drain region 814, and an LDD region 815a.
To 815d, the isolation region 816 and the channel formation region 81
An active layer including 7a and 817b, a gate insulating film 818,
Gate electrodes 819a and 819b and first interlayer insulating film 820
And a source signal line 821 and a drain wiring 822. Note that the gate insulating film 818 or the first interlayer insulating film 820 may be common to all TFTs on the substrate,
It may be different depending on the circuit or element.

The switching TFT 8 shown in FIG.
201 has a so-called double gate structure in which gate electrodes 817a and 817b are electrically connected. Of course, not only a double gate structure but also a so-called multi-gate structure (a structure including an active layer having two or more channel forming regions connected in series) such as a triple gate structure may be used.

The multi-gate structure is extremely effective in reducing the off-state current. If the off-state current of the switching TFT is made sufficiently low, the current control TFT 820 is reduced accordingly.
The minimum capacitance required by the capacitor connected to the second gate electrode can be suppressed. That is, since the area of the capacitor can be reduced, a multi-gate structure is effective in increasing the effective light emitting area of the light emitting element.

Further, in the switching TFT 8201, the LDD regions 815a to 815d are provided so as not to overlap the gate electrodes 819a and 819b via the gate insulating film 818. Such a structure is very effective in reducing off-state current. Also, the LDD region 815a
The length (width) of .about.815d may be 0.5-3.5 .mu.m, typically 2.0-2.5 .mu.m.

Note that it is more preferable to provide an offset region (a region made of a semiconductor layer having the same composition as the channel formation region and to which a gate voltage is not applied) between the channel formation region and the LDD region in order to reduce off-state current. . Also,
In the case of a multi-gate structure having two or more gate electrodes, an isolation region 816 provided between channel formation regions
(A region where the same impurity element is added at the same concentration as the source region or the drain region) is effective in reducing off-state current.

Next, the current controlling TFT 8202 includes an active layer including a source region 826, a drain region 827, and a channel forming region 829, a gate insulating film 818, a gate electrode 830, a first interlayer insulating film 820, It is formed to have a signal line 831 and a drain wiring 832. In this embodiment, the current control TFT 8202 is a p-channel TFT.

The drain region 814 of the switching TFT 8201 is connected to the gate 830 of the current controlling TFT 8202. Although not shown, specifically, the gate electrode 830 of the current controlling TFT 8202 is electrically connected to the drain region 814 of the switching TFT 8201 via a drain wiring (also referred to as a connection wiring) 822. Note that the gate electrode 830 has a single gate structure, but may have a multi-gate structure. The source signal line 831 of the current controlling TFT 8202 is connected to a current supply line (not shown).

The current controlling TFT 8202 is an element for controlling the amount of current injected into the light emitting element, and a relatively large amount of current flows. Therefore, it is preferable that the channel width (W) is designed to be larger than the channel width of the switching TFT. Further, it is preferable that the channel length (L) is designed to be long so that an excessive current does not flow through the current controlling TFT 8202. Desirably 0.5 per pixel
２2 μA (preferably 1 to 1.5 μA).

The thickness of the active layer (particularly, the channel formation region) of the current controlling TFT 8202 is increased (preferably 50 to 100 nm, more preferably 60 to 80 n).
m), deterioration of the TFT may be suppressed. Conversely, in the case of the switching TFT 8201, from the viewpoint of reducing the off-state current, the thickness of the active layer (particularly, the channel formation region) is reduced (preferably 20 to 50).
nm, more preferably 25 to 40 nm) is also effective.

Although the structure of the TFT provided in the pixel has been described above, a driving circuit is also formed at this time. FIG. 8 shows a CMO as a basic unit for forming a drive circuit.
The S circuit is shown.

In FIG. 8, a TFT having a structure for reducing hot carrier injection while keeping the operation speed from decreasing as much as possible is replaced with an n-channel TFT 820 of a CMOS circuit.
Used as 4. In addition, as the drive circuit here,
Refers to a source signal side driving circuit and a gate signal side driving circuit.
Of course, other logic circuits (such as a level shifter, an A / D converter, and a signal dividing circuit) can be formed.

An n-channel TFT 820 of a CMOS circuit
The active layer 4 has a source region 835 and a drain region 83.
6, an LDD region 837 and a channel formation region 838, and the LDD region 837 overlaps with the gate electrode 839 via the gate insulating film 818.

The LDD region 8 is formed only on the drain region 836 side.
The reason why 37 is formed is that the operation speed is not reduced. In addition, the n-channel TFT 8204 does not need to care much about the off-state current value, and it is better to emphasize the operation speed. Therefore, the LDD region 837
Is completely overlapped with the gate electrode, and it is desirable to reduce the resistance component as much as possible. That is, it is better to eliminate the so-called offset.

Also, a p-channel type TFT of a CMOS circuit
In the case of 8205, the deterioration due to hot carrier injection is hardly noticeable, so that an LDD region does not need to be provided. Therefore, the active layer includes a source region 840, a drain region 841, and a channel formation region 842, over which a gate insulating film 818 and a gate electrode 843 are provided. Of course, n
An LDD region is provided similarly to the channel type TFT 8204,
It is also possible to take hot carrier measures.

Reference numerals 861 to 865 denote channel formation regions 8
42, 838, 817a, 817b, and 829.

The n-channel TFT 8204 and the p-channel TFT
Each of the channel type TFTs 8205 has a source signal line 84 on a source region with a first interlayer insulating film 820 interposed therebetween.
4,845. Further, an n-channel TFT 8204 and a p-channel TF
The drain region with T8205 is electrically connected to each other.

Next, reference numeral 847 denotes a first passivation film having a thickness of 10 nm to 1 μm (preferably 200 to 5 μm).
00 nm). As a material, an insulating film containing silicon (especially a silicon nitride oxide film or a silicon nitride film is preferable)
Can be used. This passivation film 847
Has a role of protecting the formed TFT from alkali metals and moisture. Finally, the TFT (especially the T for current control)
The organic compound layer provided above the FT) contains an alkali metal such as sodium. That is, the first passivation film 847 also functions as a protective layer that prevents these alkali metals (mobile ions) from entering the TFT side.

Reference numeral 848 denotes a second interlayer insulating film.
It has a function as a flattening film for flattening a step formed by FT. As the second interlayer insulating film 848, an organic resin film is preferable, and polyimide, polyamide, acrylic, BCB (benzocyclobutene), or the like is preferably used.
These organic resin films have an advantage that a good flat surface is easily formed and the relative dielectric constant is low. Since the organic compound layer is very sensitive to unevenness, it is desirable that the step due to the TFT is almost completely absorbed by the second interlayer insulating film 848. In order to reduce the parasitic capacitance formed between the gate signal line or the data signal line and the cathode of the light emitting element, it is desirable to provide a thick material having a low relative dielectric constant. Therefore, the film thickness is preferably 0.5 to 5 μm (preferably 1.5 to 2.5 μm).

Reference numeral 849 denotes a pixel electrode (anode of a light emitting element) made of a transparent conductive film, which is formed after opening a contact hole (opening) in the second interlayer insulating film 848 and the first passivation film 847. The opening is formed so as to be connected to the drain wiring 832 of the current controlling TFT 8202. If the pixel electrode 849 and the drain region 827 are not directly connected as shown in FIG. 8, it is possible to prevent the alkali metal of the organic compound layer from entering the active layer via the pixel electrode.

A third interlayer insulating film 85 made of a silicon oxide film, a silicon nitride oxide film or an organic resin film is formed on the pixel electrode 849.
0 is provided for a thickness of 0.3-1 μm. The third interlayer insulating film 850 has an opening formed by etching on the pixel electrode 849, and the edge of the opening is etched so as to have a tapered shape. The taper angle is 10-60
° (preferably 30 to 50 °).

On the third interlayer insulating film 850, an organic compound layer 851 is provided. Although the organic compound layer 851 is used in a single layer or a stacked structure, the luminous efficiency is better when used in a stacked structure. Generally, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer are formed in this order on a pixel electrode. A structure such as a hole transport layer / light emitting layer / electron transport layer / electron injection layer may be used. In the present invention, any known structure may be used, and the organic compound layer may be doped with a fluorescent dye or the like.

The structure shown in FIG. 8 is an example in the case where a method of forming three types of light emitting elements corresponding to RGB is used. In addition,
Although only one pixel is shown in FIG. 8, pixels having the same structure are formed corresponding to the respective colors of red, green, and blue, whereby color display can be performed. The present invention can be implemented regardless of the light emitting method.

On the organic compound layer 851, a cathode 852 of a light emitting element is provided. As the cathode 852, a material containing magnesium (Mg), lithium (Li), or calcium (Ca) having a small work function is used. Preferably, an electrode made of MgAg (a material in which Mg and Ag are mixed at a ratio of Mg: Ag = 10: 1) may be used. In addition, MgAg
An Al electrode, a LiAl electrode, and a LiFAl electrode are mentioned.

Note that a light-emitting element 8206 is formed by the pixel electrode (anode) 849, the organic compound layer 851, and the cathode 852.

A laminate composed of the organic compound layer 851 and the cathode 852 needs to be individually formed for each pixel. However, since the organic compound layer 851 is extremely weak to moisture, ordinary photolithography cannot be used. . Therefore, using a physical mask material such as a metal mask, a vacuum deposition method,
It is preferable to selectively form by a vapor phase method such as a sputtering method or a plasma CVD method.

As a method for selectively forming an organic compound layer, an ink-jet method, a screen printing method, a spin coating method, or the like can be used. However, since these methods cannot continuously form a cathode at present, these methods are used. It can be said that the above method is more preferable.

Reference numeral 853 denotes a protection electrode, and a cathode 85.
2 is an electrode for protecting the pixel 2 from external moisture and the like and for connecting the cathode 852 of each pixel. As the protective electrode 853, a low-resistance material including aluminum (Al), copper (Cu), or silver (Ag) is preferably used.
The protective electrode 853 can also be expected to have a heat radiation effect of reducing heat generation of the organic compound layer.

A second passivation film 854 has a thickness of 10 nm to 1 μm (preferably 200 to 5 μm).
00 nm). Second passivation film 85
The purpose of providing 4 is mainly to protect the organic compound layer 851 from moisture, but it is also effective to have a heat radiation effect. However, since the organic compound layer is weak to heat as described above, it is desirable to form the film at a temperature as low as possible (preferably in a temperature range from room temperature to 120 ° C.). Therefore, it can be said that a plasma CVD method, a sputtering method, a vacuum evaporation method, an ion plating method, or a solution coating method (spin coating method) is a preferable film forming method.

The light emitting device of this embodiment has
1 has a defective portion, and has a defective portion 866 where the pixel electrode (anode) 849 and the cathode 852 are short-circuited in the defective portion. The position of the defective portion 866 is specified by using the present invention, and the defective portion 866 is insulated by laser irradiation and repaired, so that the defective portion 866 is made of the insulator 86.
By changing to 7, leakage current in the defective portion 866 can be prevented. Therefore, the light-emitting element which has been quenched by the leak current in the defective portion 866 can emit light again. Further, by insulating the defective portion 866, deterioration of the organic compound layer 851 around the defective portion can be prevented.

The light emitting device having the structure shown in this embodiment can be implemented by freely combining with the structures of Embodiments 1 to 4.

[Embodiment 7] Since a light emitting device using a light emitting element is of a self-luminous type, it has better visibility in a bright place and a wider viewing angle than a liquid crystal display device. Therefore, various electric appliances can be completed using the light emitting device of the present invention.

Examples of the electric appliance using a light emitting device for inspecting and repairing a defective portion of a light emitting element according to the present invention include a video camera, a digital camera, a goggle type display (head mounted display), a navigation system,
Sound playback devices (car audio, audio components, etc.), notebook personal computers, game machines,
A portable information terminal (a mobile computer, a mobile phone, a portable game machine, an electronic book, or the like), and an image reproducing apparatus provided with a recording medium (specifically, a digital video disc (DV
D) and the like, a device provided with a display device capable of reproducing a recording medium and displaying an image thereof. In particular, in a portable information terminal in which a screen is often viewed from an oblique direction, since a wide viewing angle is regarded as important, it is desirable to use a light emitting device having a light emitting element. FIG. 9 shows specific examples of these electric appliances.

FIG. 9A shows a display device,
1, support stand 2002, display section 2003, speaker section 2
004, a video input terminal 2005 and the like. In the present invention, a light-emitting device manufactured by performing inspection and repair of a defective portion of a light-emitting element is used for the display portion 2003. Since a light-emitting device having a light-emitting element is a self-luminous type, it does not require a backlight and can have a thinner display portion than a liquid crystal display device. The display device includes all information display devices for personal computers, TV broadcast reception, advertisement display, and the like.

FIG. 9B shows a digital still camera, which includes a main body 2101, a display portion 2102, an image receiving portion 2103,
An operation key 2104, an external connection port 2105, a shutter 2106, and the like are included. In the present invention, a light emitting device manufactured by inspecting and repairing a defective portion of a light emitting element is used for the display portion 2102.

FIG. 9C shows a notebook personal computer, which includes a main body 2201, a housing 2202, and a display section 22.
03, keyboard 2204, external connection port 2205,
A pointing mouse 2206 and the like are included. In the present invention, the display portion 2203 is manufactured by using a light-emitting device manufactured by inspecting and repairing a defective portion of a light-emitting element.

FIG. 9D shows a mobile computer, which includes a main body 2301, a display portion 2302, and a switch 230.
3, an operation key 2304, an infrared port 2305, and the like. In the invention, the display portion 2302 is manufactured using a light-emitting device manufactured by inspecting and repairing a defective portion of a light-emitting element.

FIG. 9E shows a portable image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, and includes a main body 2401, a housing 2402, a display portion A 2403, and a display portion B.
2404, a recording medium (DVD or the like) reading unit 2405,
An operation key 2406, a speaker unit 2407, and the like are included. A display portion A 2403 mainly displays image information, and a display portion B
2404 mainly displays character information. In the present invention, a light emitting device manufactured by inspecting and repairing a defective portion of a light emitting element is referred to as a display portion A, B 2403, or a light emitting device.
404 can be used. Note that the image reproducing device provided with the recording medium includes a home game machine and the like.

FIG. 9F shows a goggle type display (head mounted display), which includes a main body 2501, a display section 2502, and an arm section 2503. In the present invention, the display portion 2502 can be manufactured by using a light-emitting device manufactured by inspecting and repairing a defective portion of a light-emitting element.

FIG. 9G shows a video camera,
Reference numeral 601, display unit 2602, housing 2603, external connection port 2604, remote control receiving unit 2605, image receiving unit 260
6, a battery 2607, a voice input unit 2608, operation keys 2609, an eyepiece 2610, and the like. In the present invention, a light-emitting device manufactured by performing inspection and repair of a defective portion of a light-emitting element can be used for the display portion 2602.

[0200] FIG. 9H shows a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, a voice input portion 2704, a voice output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. Including. In the present invention, a light-emitting device manufactured by inspecting and repairing a defective portion of a light-emitting element can be used for the display portion 2703. The display unit 270
No. 3 can suppress the power consumption of the mobile phone by displaying white characters on a black background.

If the emission luminance of the organic compound becomes higher in the future, the light containing the output image information can be enlarged and projected by a lens or the like and used for a front-type or rear-type projector.

[0202] The above-mentioned electric appliances are available on the Internet or C
Information distributed through an electronic communication line such as an ATV (cable television) is often displayed, and in particular, opportunities to display moving image information are increasing. Since the response speed of an organic compound is extremely high, a light-emitting device is preferable for displaying moving images.

[0203] Since the light emitting device consumes power in the light emitting portion, it is desirable to display information so that the light emitting portion is reduced as much as possible. Therefore, when a light emitting device is used for a portable information terminal, particularly a display portion mainly for character information such as a mobile phone or a sound reproducing device, the light emitting portion is driven to form character information with a non-light emitting portion as a background. It is desirable to do.

As described above, the applicable range of the light emitting device for inspecting and repairing a defective portion of a light emitting element according to the present invention is extremely wide, and it can be used for electric appliances in all fields. Further, the electric appliance of this embodiment can be completed by using the light emitting device manufactured by carrying out Embodiments 1 to 6.

[0205]

As described above, according to the present invention, a defect in a light emitting element is inspected, the position of the defect is specified, and the defect is irradiated with a laser to short-circuit the anode and the cathode of the light emitting element. The location can be insulated to prevent leakage current at the short location. Thus, the light emitting element that has been extinguished can emit light again. Note that a light-emitting device can be manufactured by repairing a light-emitting element having a defective portion according to the present invention; therefore, the yield in the production of a light-emitting device can be improved.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a method for inspecting and repairing a defective portion according to the present invention.

FIG. 2 is a diagram illustrating a method for inspecting and repairing a defective portion according to the present invention.

FIG. 3 is a circuit diagram of a pixel.

4A and 4B are a circuit diagram of a pixel and an operation of a pixel portion at the time of inspection.

FIG. 5 is a photograph of a defect observed by an emission microscope.

FIG. 6 is a diagram illustrating a configuration of a film forming apparatus used in the present invention.

FIG. 7 illustrates a cross-sectional structure of a light-emitting device.

FIG. 8 illustrates a cross-sectional structure of a light-emitting device.

FIG. 9 illustrates an example of an electric appliance.

FIG. 10 illustrates a conventional example.

FIG. 11 is a diagram illustrating electrical characteristics of a defective portion when a reverse bias is applied.

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Claims (29)

[Claims] 1. A light emitting device having a light emitting element comprising an anode, a cathode, and an organic compound layer, wherein a reverse bias is applied to the light emitting element, a defective portion of the light emitting element is specified, and the defective portion is irradiated with a laser. A method for manufacturing a light-emitting device, comprising: 2. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein a defective portion is specified by applying a reverse bias to the light emitting element and detecting a light emitting portion in the light emitting element. A method for manufacturing a light-emitting device, which comprises irradiating a defect with a laser. 3. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein a reverse bias is applied to the light emitting element, a defective portion of the light emitting element is specified, and a laser is applied to the defective portion. A method for manufacturing a light-emitting device, wherein the defective portion is insulated by using the above method. 4. A light emitting device having a light emitting element comprising an anode, a cathode, and an organic compound layer, wherein a defective portion is specified by applying a reverse bias to the light emitting element and detecting a light emitting portion in the light emitting element. A method for manufacturing a light-emitting device, comprising irradiating a defective portion with a laser to insulate the defective portion. 5. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein a reverse bias is applied to the light emitting element, a defective portion of the light emitting element is specified, and the defective portion is irradiated with a laser. A method for manufacturing a light-emitting device, characterized in that a reverse current is made smaller than before laser irradiation. 6. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein a defective portion is specified by applying a reverse bias to the light emitting element and detecting a light emitting portion in the light emitting element. A method for manufacturing a light-emitting device, wherein a reverse current is reduced by irradiating a defect portion with a laser as compared to before laser irradiation. 7. A light emitting device having a light emitting element comprising a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, wherein a reverse bias is applied to the light emitting element, and a defective portion of the light emitting element is provided. And irradiating the defective portion with a laser. 8. A light emitting device having a light emitting element comprising a cathode, an organic compound layer in contact with the cathode, and an anode in contact with the organic compound layer, wherein a reverse bias is applied to the light emitting element, and a light emitting portion in the light emitting element A method for manufacturing a light-emitting device, comprising: identifying a defective portion by detecting a laser beam; and irradiating the defective portion with a laser. 9. A light emitting device having a light emitting element comprising an anode, an organic compound layer in contact with the anode, and a cathode in contact with the organic compound layer, wherein a reverse bias is applied to the light emitting element, and a defective portion of the light emitting element And irradiating the defective portion with a laser to insulate the defective portion. 10. A light emitting device comprising a light emitting element comprising an anode, an organic compound layer in contact with said anode, and a cathode in contact with said organic compound layer, a reverse bias is applied to said light emitting element, and a light emitting portion in said light emitting element A method for manufacturing a light-emitting device, comprising: identifying a defective portion by detecting a laser beam; and irradiating the defective portion with a laser to insulate the defective portion. 11. A light emitting device comprising a light emitting element comprising an anode, an organic compound layer in contact with said anode, and a cathode in contact with said organic compound layer, a reverse bias is applied to said light emitting element, and a defective portion of said light emitting element And irradiating the defective portion with a laser so that the reverse current is smaller than before the laser irradiation. 12. A light emitting device having a light emitting element comprising an anode, an organic compound layer in contact with said anode, and a cathode in contact with said organic compound layer, a reverse bias is applied to said light emitting element, and a light emitting portion in said light emitting element A method for manufacturing a light-emitting device, comprising: identifying a defective portion by detecting a laser beam; and irradiating the defective portion with a laser to reduce a reverse current as compared to before the laser irradiation. 13. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein the organic compound layer is a light emitting layer, a hole injection layer, a hole transport layer,
A method for manufacturing a light-emitting device, comprising: an electron transport layer or an electron injection layer; applying a reverse bias to the light-emitting element; identifying a position of the defect; and irradiating the defect with a laser. 14. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein the organic compound layer is a light emitting layer, a hole injection layer, a hole transport layer,
Having an electron transport layer or an electron injection layer, applying a reverse bias to the light emitting element, detecting a light emitting portion in the light emitting element, specifying a position of the defective portion, and irradiating the defective portion with a laser. A method for manufacturing a light-emitting device, which is a feature. 15. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein the organic compound layer is a light emitting layer, a hole injection layer, a hole transport layer,
Having an electron transport layer or an electron injection layer, applying a reverse bias to the light emitting element, specifying the position of the defect, and irradiating the defect with a laser to insulate the defect. For manufacturing a light emitting device. 16. A light emitting device having a light emitting element comprising an anode, a cathode and an organic compound layer, wherein the organic compound layer is a light emitting layer, a hole injection layer, a hole transport layer,
Having an electron transport layer or an electron injection layer, applying a reverse bias to the light emitting element, identifying a position of a defective portion by detecting a light emitting portion in the light emitting element, and irradiating a laser to the defective portion to irradiate a laser. A method for manufacturing a light-emitting device, wherein a defective portion is insulated. 17. A light-emitting device having a light-emitting element comprising an anode, a cathode, and an organic compound layer, wherein the organic compound layer is a light-emitting layer, a hole injection layer, a hole transport layer,
Having an electron transporting layer or an electron injecting layer, applying a reverse bias to the light emitting element, specifying the position of the defective portion, and irradiating the defective portion with a laser so that the reverse current is smaller than before the laser irradiation. A method for manufacturing a light-emitting device. 18. A light-emitting device having a light-emitting element comprising an anode, a cathode, and an organic compound layer, wherein the organic compound layer is a light-emitting layer, a hole injection layer, a hole transport layer,
Having an electron transport layer or an electron injection layer, applying a reverse bias to the light emitting element, identifying a position of a defective portion by detecting a light emitting portion in the light emitting element, and irradiating the defective portion with a laser. A method for manufacturing a light-emitting device, wherein a reverse current is made smaller than before laser irradiation. 19. A light emitting device having a light emitting element and a thin film transistor, wherein a reverse bias is applied to the light emitting element, a defective portion of the light emitting element is specified, and the defective portion is irradiated with a laser. Method of manufacturing. 20. In a light emitting device having a light emitting element and a thin film transistor, a reverse bias is applied to the light emitting element, a light emitting portion in the light emitting element is detected, a defective portion is specified, and the defective portion is irradiated with a laser. A method for manufacturing a light-emitting device, comprising: 21. In a light emitting device having a light emitting element and a thin film transistor, a reverse bias is applied to the light emitting element, a defective portion of the light emitting element is specified, and the defective portion is irradiated with a laser to insulate the defective portion. A method for manufacturing a light-emitting device. 22. A light emitting device having a light emitting element and a thin film transistor, wherein a reverse bias is applied to the light emitting element, a light emitting portion in the light emitting element is detected, a defective portion is specified, and the defective portion is irradiated with a laser. A method for manufacturing a light-emitting device, wherein the defective portion is insulated by using the above method. 23. A light-emitting device having a light-emitting element and a thin film transistor, wherein a reverse bias is applied to the light-emitting element, a defective portion of the light-emitting element is specified, and the defective portion is irradiated with a laser. A method for manufacturing a light-emitting device, wherein a reverse current is reduced. 24. In a light emitting device having a light emitting element and a thin film transistor, a reverse bias is applied to the light emitting element, a light emitting portion in the light emitting element is detected, a defective portion is specified, and the defective portion is irradiated with a laser. A method for manufacturing a light-emitting device, characterized in that a reverse current is made smaller than before laser irradiation. 25. The method for manufacturing a light emitting device according to claim 1, wherein the reverse bias is applied in a range of 1 to 15V. 26. A first method for forming an organic compound layer of a light emitting device.
A second film forming chamber for forming a counter electrode of the light emitting element, and a first processing chamber for applying a reverse bias to the light emitting element to detect a light emitting portion of the light emitting element. A second processing chamber for irradiating the light emitting element with a laser, and a third processing chamber for sealing the light emitting device. 27. The thin film forming apparatus according to claim 26, wherein the first film forming chamber is a film forming chamber for forming a film by an evaporation method or a film forming chamber for forming a film by a coating method. A thin film forming apparatus characterized by the above-mentioned. 28. The thin film forming apparatus according to claim 26, wherein the first processing chamber includes means for applying a reverse bias to the light emitting element in a range of 1 to 15 V, and A thin-film forming apparatus comprising: means for detecting. 29. The light-emitting device according to claim 26, wherein a light-emitting portion is detected in the first processing chamber, and a laser is irradiated to the light-emitting portion in the second processing chamber. A method for manufacturing a light-emitting device, wherein the light-emitting device is sealed in a treatment chamber.