JP2002259951A - Repetitive pattern erasing method, defect inspection method and device - Google Patents

Repetitive pattern erasing method, defect inspection method and device

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Publication number
JP2002259951A
JP2002259951A JP2001051786A JP2001051786A JP2002259951A JP 2002259951 A JP2002259951 A JP 2002259951A JP 2001051786 A JP2001051786 A JP 2001051786A JP 2001051786 A JP2001051786 A JP 2001051786A JP 2002259951 A JP2002259951 A JP 2002259951A
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JP
Japan
Prior art keywords
density difference
pattern
pixel group
image
comparative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001051786A
Other languages
Japanese (ja)
Other versions
JP4560969B2 (en
Inventor
Yukihiro Ayaki
之裕 綾木
Noriaki Yugawa
典昭 湯川
Hajime Kawano
肇 川野
Koji Yoshii
宏治 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Priority to JP2001051786A priority Critical patent/JP4560969B2/en
Publication of JP2002259951A publication Critical patent/JP2002259951A/en
Application granted granted Critical
Publication of JP4560969B2 publication Critical patent/JP4560969B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Image Processing (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Controls And Circuits For Display Device (AREA)
  • Image Analysis (AREA)

Abstract

PROBLEM TO BE SOLVED: To resolve a problem in application of a conventional pattern erasing process where a linear defect portion which should be left as a defect is erased by pattern erasure or a pattern is left when the pattern has dispersion of pattern pitches. SOLUTION: A concentration difference nearest to 0 is determined from respective concentration differences between a target picture element and a comparison picture element group A arranged on the same column as the target picture element and between the target picture element and a comparison picture element group B arranged in a direction perpendicular to the comparison picture element group A, a concentration difference farthest from 0 is determined by comparing a particular concentration difference to the comparison picture element group A and a particular concentration difference to the comparison picture element group B, and a pattern erased image of adding a maximum concentration difference to a reference concentration in a pattern erasure target image is generated.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は主に液晶パネル、プ
ラズマディスプレイ、半導体ウェハ等の電子機器デバイ
スに含まれる繰り返しパターン中の欠陥判定を行う際
の、画像中における繰り返しパターン消去方法ならびに
欠陥検査を行う欠陥検査方法及び装置に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention mainly relates to a method of erasing a repetitive pattern in an image and a defect inspection for judging a defect in a repetitive pattern included in an electronic device such as a liquid crystal panel, a plasma display, and a semiconductor wafer. The present invention relates to a defect inspection method and apparatus to be performed.

【0002】[0002]

【従来の技術】液晶パネル、プラズマディスプレイ、半
導体ウェハ等の電子機器デバイスは、部分的なパターン
と同じものが全体に繰り返し形成されているものが多
く、その繰り返しパターンの中の欠陥を対象として検出
する場合、主に次の処理により、欠陥を検出していた。
2. Description of the Related Art In many cases, electronic devices such as liquid crystal panels, plasma displays, and semiconductor wafers have the same pattern as a partial pattern formed repeatedly as a whole, and detect defects in the repeated pattern as a target. In this case, a defect is detected mainly by the following processing.

【0003】まず、画像入力した繰り返しパターンを含
んだ原画像に対して、
[0003] First, for an original image including a repetition pattern that is input as an image,

【0004】[0004]

【数1】 (Equation 1)

【0005】(数1)という処理を行い、パターン消去
を行う。ここで、Vは処理後画像の各画素の濃度、Iは
原画像の各画素の濃度、I1、I2、・・、Inは比較
画素の濃度で、比較画素としては、繰り返しパターンの
基準ピッチ離れた画素を選択する。比較画素を複数にす
ることにより、ノイズ等外乱に対して頑健にすることが
できる。Fは、各要素の絶対値が最小のものを選択し、
その要素を返す関数である。Cは、処理後画像において
基準濃度として加えるもので、8ビット256階調の場
合、中央の128階調とすることが多い。この処理をパ
ターン消去処理と呼び、ここで得られた画像を、パター
ン消去処理後の画像あるいは背景画像と呼ぶ。
[0005] The process of (Equation 1) is performed to perform pattern erasure. Here, V is the density of each pixel of the processed image, I is the density of each pixel of the original image, I1, I2,..., And In are the density of the comparison pixels. Selected pixel. By using a plurality of comparison pixels, it is possible to be robust against disturbance such as noise. F selects the one with the smallest absolute value of each element,
A function that returns that element. C is added as a reference density in the processed image, and in the case of 256 gradations of 8 bits, it is often 128 gradations at the center. This process is called a pattern erasing process, and the image obtained here is called an image after the pattern erasing process or a background image.

【0006】次に、背景画像の背景濃度と逸脱する塊を
検出し、欠陥とする。この処理を欠陥検出処理と呼ぶ。
Next, a mass which deviates from the background density of the background image is detected and determined as a defect. This process is called a defect detection process.

【0007】図9は、従来の繰り返しパターン消去方法
を説明した図で、図9(a)が、矩形形状が繰り返され
るパターン消去処理前の画像、図9(b)が、処理後の
画像で、パターンが消去されていることが分かる。
FIG. 9 is a view for explaining a conventional repeated pattern erasing method. FIG. 9A shows an image before pattern erasing processing in which a rectangular shape is repeated, and FIG. 9B shows an image after processing. It can be seen that the pattern has been erased.

【0008】また、図9(a)、(b)の下部には、パ
ターン処理前の画像および処理後の画像におけるチェッ
クライン11、12上の濃度プロファイル13、14を
示している。明るい方が255階調に近く、暗い方が0
階調に近い。
The lower part of FIGS. 9A and 9B shows density profiles 13 and 14 on check lines 11 and 12 in an image before pattern processing and an image after pattern processing. Brighter is closer to 255 gradations, darker is 0
Close to gradation.

【0009】欠陥検出処理は、図9(b)の処理後の画
像に対して、一定濃度条件を満たすものを欠陥として検
出する。ここで、チェックライン12上の濃度プロファ
イル14を例にとると、規定濃度階調135以上を白欠
陥、規定濃度階調120以下を黒欠陥としているので、
ここでは黒欠陥15が検出される。
In the defect detection processing, an image satisfying a certain density condition is detected as a defect in the image after the processing of FIG. Here, taking the density profile 14 on the check line 12 as an example, white defects are defined above the specified density gradation 135 and black defects are defined below the specified density gradation 120.
Here, the black defect 15 is detected.

【0010】[0010]

【発明が解決しようとする課題】しかしながら、上記従
来のパターン消去処理においては、以下の問題がある。
However, the conventional pattern erasing process has the following problems.

【0011】液晶パネルやプラズマディスプレイでは、
機器の特性上、欠陥として線状欠陥が出現することが多
い。図10(a)は、繰り返しパターン上に線状欠陥が
存在している状態である。図10(b)は、図10
(a)に対して、従来のパターン消去処理を適用した処
理後画像である。本来、欠陥として残るべき線状欠陥部
分も、パターン消去により消去されてしまっている。
In a liquid crystal panel or a plasma display,
Due to the characteristics of equipment, linear defects often appear as defects. FIG. 10A shows a state in which a linear defect exists on the repeated pattern. FIG.
14A is a processed image obtained by applying a conventional pattern erasing process to FIG. Originally, a linear defect portion that should remain as a defect has been erased by pattern erasure.

【0012】これは、複数比較画素との濃度差で、最も
0に近いものを選択するために生じた現象である。比較
画素を1点のみにすれば、線状欠陥を消去してしまうこ
とはないが、頑健性が失われる。また、複数比較画素を
線状欠陥の垂直な方向に設定すれば同じく線状欠陥を消
去せずにすむが、1方向のみの線状欠陥にしか対応でき
ない。
This is a phenomenon that has occurred because a density difference between a plurality of comparison pixels and the density difference closest to 0 is selected. If only one comparison pixel is used, the linear defect is not erased, but the robustness is lost. If the plurality of comparison pixels are set in a direction perpendicular to the linear defect, the linear defect does not need to be erased, but only a linear defect in one direction can be dealt with.

【0013】また、製造プロセス起因によりパターンピ
ッチが一定とならず、微小にばらついている場合は、注
目画素と比較画素との比較距離を1つしか持たないた
め、パターンピッチが規定の分からずれている部分で
は、パターンどうしを比較できないため、パターンが完
全には消去されないという問題が生じる。消去されず残
ったパターンは、欠陥として誤検出されることは言うま
でもない。
When the pattern pitch is not constant due to the manufacturing process and is slightly varied, the pattern pitch deviates from a specified amount because there is only one comparison distance between the target pixel and the comparison pixel. Since the patterns cannot be compared with each other in the portion where the pattern is present, there is a problem that the pattern is not completely erased. It goes without saying that the pattern remaining without being erased is erroneously detected as a defect.

【0014】図11(a)は、パターンピッチpと、ば
らつきによりパターンピッチp+αを有するパターンで
ある。図11(b)は、従来の繰り返しパターン消去処
理を比較距離pで適用した場合である。パターンピッチ
pの部分では、パターンの消去に成功しているが、パタ
ーンピッチp+αの部分では、パターンが完全には消去
されず、残っていることが分かる。
FIG. 11A shows a pattern having a pattern pitch p and a pattern pitch p + α due to variation. FIG. 11B shows a case where the conventional repeated pattern erasing process is applied at the comparison distance p. It can be seen that the pattern is successfully erased at the pattern pitch p, but the pattern is not completely erased but remains at the pattern pitch p + α.

【0015】パターンピッチが一定とならない原因とし
ては、製造プロセス起因で実際にピッチが一定にならな
いこともあれば、画像入力時に光学系の特性としてモア
レが発生し、ピッチが一定にならないこともある。さら
に、画像取り込み時の振動等でピッチが一定にならない
こともある。
The reasons why the pattern pitch is not constant may be that the pitch is not actually constant due to the manufacturing process, or that moire occurs as a characteristic of the optical system when an image is input and the pitch is not constant. . Further, the pitch may not be constant due to vibration or the like during image capture.

【0016】本発明は上記課題を解決し、線状欠陥も有
する繰り返しパターンの検査ができる繰り返しパターン
消去手法を提供することを目的としている。
An object of the present invention is to solve the above-mentioned problem and to provide a repetitive pattern erasing method capable of inspecting a repetitive pattern having a linear defect.

【0017】さらに、パターンピッチが一定とならず、
ばらつく場合でもパターン消去が完全に行われる手法を
提供することを目的としている。
Further, the pattern pitch is not constant,
It is an object of the present invention to provide a method in which pattern erasure is completely performed even when there is variation.

【0018】[0018]

【課題を解決するための手段】この課題を解決するため
に本発明は、注目画素とこの注目画素と同じ列上に配置
された比較画素群Aおよびその比較画素群Aとは垂直方
向に配置された比較画素群Bとのそれぞれの濃度差から
最も0に近い濃度差を求め、比較画素群Aに対する特定
濃度差と比較画素群Bに対する特定濃度差を比較して0
から遠い濃度差を決定し、最大濃度差をパターン消去画
像における基準濃度に対して加えるパターン消去画像を
生成したものである。
SUMMARY OF THE INVENTION In order to solve this problem, the present invention provides a pixel of interest, a group of comparative pixels A arranged on the same column as the pixel of interest, and the group of comparative pixels A arranged vertically. A density difference closest to 0 is obtained from the respective density differences with the comparison pixel group B, and the specific density difference for the comparison pixel group A and the specific density difference for the comparison pixel group B are compared with each other.
A pattern erasure image is generated by determining a density difference far from the reference density and adding the maximum density difference to a reference density in the pattern erasure image.

【0019】これにより、上記問題を解消して線状欠陥
を有する繰り返しパターンの線状欠陥を消去することな
く、パターンのみを適切に消去することができる。
Thus, the above problem can be solved and only the pattern can be properly erased without erasing the linear defect of the repeated pattern having the linear defect.

【0020】また、比較画素群Aに対する特定濃度差と
比較画素群Bに対する特定濃度差の比較方法を0から近
い方を選択することもできる切り替えも可能であるの
で、線状欠陥を有しないことが既知である被検査体の場
合も、検出手法と装置のハードウェア等を大幅に共有化
することが可能である。
In addition, since the method of comparing the specific density difference for the comparative pixel group A and the specific density difference for the comparative pixel group B can be selected from those closer to 0, there is no linear defect. In the case of a test object for which is known, the detection method and the hardware of the apparatus can be largely shared.

【0021】さらに、比較画素群A、Bに対しパターン
ピッチのずれ量を考慮した比較画素群Dを設けてこの比
較画素群Dに対する特定濃度差を決定し、注目画素と前
記比較画素群A、Bおよび前記比較画素群Dとのそれぞ
れの特定濃度差から最も0に近い濃度差を求めて特定濃
度差とすることにより、パターンピッチのばらつきを有
するパターンに対しても、パターンを残すことなく、上
記問題を解消してパターンを適切に消去することができ
る。
Further, a comparative pixel group D is provided for the comparative pixel groups A and B in consideration of the shift amount of the pattern pitch, and a specific density difference with respect to the comparative pixel group D is determined. By determining the density difference closest to 0 from each specific density difference between B and the comparative pixel group D and setting the density difference as the specific density difference, even for a pattern having a variation in pattern pitch, without leaving a pattern, The above problem can be solved and the pattern can be properly erased.

【0022】[0022]

【発明の実施の形態】以下、線欠陥検出可能な繰り返し
パターン消去方法を、被検査体が液晶ディスプレイにお
ける欠陥検査に適用した一実施形態を、図1〜図5を参
照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which a repetitive pattern erasing method capable of detecting a line defect is applied to a defect inspection of a liquid crystal display for an object to be inspected will be described below with reference to FIGS.

【0023】パターン欠陥検査装置の概略構成を示す図
1において、被検査体1が設置され、落射照明2により
照明され、CCDエリアセンサなどからなる撮像素子3
にて撮像される。撮像素子3の中の画像データは、1対
1に対応付けられて処理装置としてのコンピュータ4の
中の画像メモリ5に、転送される。コンピュータ4の中
には、この画像メモリ5の画像データを読み取り、所定
の処理を行う処理プログラム6が格納されている。ここ
では、画像濃度は0〜255の256階調で扱われる。
In FIG. 1, which shows a schematic configuration of a pattern defect inspection apparatus, an inspection object 1 is installed, illuminated by an epi-illumination 2, and an imaging device 3 such as a CCD area sensor is provided.
Is imaged. The image data in the image sensor 3 is transferred to the image memory 5 in the computer 4 as a processing device in one-to-one correspondence. The computer 4 stores a processing program 6 for reading the image data in the image memory 5 and performing predetermined processing. Here, the image density is handled in 256 gradations from 0 to 255.

【0024】図2に、繰り返しパターンを消去して、欠
陥を検出する方法の処理フローを示す。図2において、
まずステップ♯1の画像入力工程で、撮像素子3からの
取り込み画像データが、コンピュータ4の画像メモリ5
に格納される。次にステップ♯2の複数濃度差検出工程
で、注目画素と比較画素群との間の濃度差を求める。さ
らに、ステップ♯3の特定濃度差検出工程で、ステップ
♯2で検出された濃度差の中で特定のものが選択され
る。ここで、複数比較画素群は図3に示されるように、
一方の繰り返し方向に設定されたA群、それと垂直の方
向に設定されたB群に分かれ、それぞれの群に対してス
テップ♯2、ステップ♯3の処理が行われるが、それぞ
れに対する処理の内容は同じであるので、ここではA群
に対しての処理方法について述べる。
FIG. 2 shows a processing flow of a method for detecting a defect by erasing a repetitive pattern. In FIG.
First, in the image input step of step # 1, the captured image data from the image sensor 3 is stored in the image memory 5 of the computer 4.
Is stored in Next, in the multiple density difference detection step of step # 2, the density difference between the target pixel and the comparison pixel group is obtained. Further, in the specific density difference detecting step of step # 3, a specific density difference is selected from the density differences detected in step # 2. Here, the plurality of comparison pixel groups are as shown in FIG.
A group set in one repetition direction and a B group set in the direction perpendicular thereto are divided into groups, and the processing of step # 2 and step # 3 is performed on each group. Since they are the same, a processing method for the group A will be described here.

【0025】予め、パターンピッチから求めたサイズp
で、以下の処理を行う。複数比較画素群Aは、サイズp
の整数倍のところから選び、注目画素と複数比較画素群
Aとの間の濃度差を求める。図4は、ある注目画素の位
置における、比較画素群との関係を示している。注目画
素10に対してサイズpで比較画素11、12が設定さ
れている。
The size p previously determined from the pattern pitch
Then, the following processing is performed. The plurality of comparison pixel groups A have a size p
The density difference between the pixel of interest and the plurality of comparison pixel groups A is determined. FIG. 4 shows a relationship between a certain pixel of interest and a comparative pixel group. Comparative pixels 11 and 12 having a size p are set for the target pixel 10.

【0026】[0026]

【数2】 (Equation 2)

【0027】(数2)で、xは注目画素、nは上述の整
数倍である。ここで、2つの濃度差が得られ、V1、V
2とする。
In (Equation 2), x is the pixel of interest, and n is an integer multiple of the above. Here, two density differences are obtained, V1 and V
Let it be 2.

【0028】次に、ステップ#3の特定濃度差決定工程
で、この2つの濃度差V1、V2から、最終的な出力濃
度を決定する。ここでは、最も0に近いものを選択す
る。例えば、V1=3、V2=−2の場合、V2が特定
濃度差として選択される。これを、比較画素群Aに対す
る特定濃度差VAとする。
Next, in a specific density difference determination step of step # 3, a final output density is determined from the two density differences V1 and V2. Here, the one closest to 0 is selected. For example, when V1 = 3 and V2 = -2, V2 is selected as the specific density difference. This is defined as a specific density difference VA for the comparison pixel group A.

【0029】同様のことを、比較画素群Aとは垂直方向
に選択された比較画素群Bに対しても行う。これを、比
較画素群Bに対する特定濃度差VBとする。
The same operation is performed for the comparison pixel group B which is selected in the vertical direction with respect to the comparison pixel group A. This is defined as a specific density difference VB for the comparison pixel group B.

【0030】そして、ステップ#4の最大濃度差決定工
程で、特定濃度差決定工程でA群、B群それぞれについ
て得られたVA、VBから、最終的な出力濃度を決定す
る。ここでは最も0から遠いものを選択する。例えばV
A=−2、VB=5の場合、VBが最大濃度差として選
択される。
Then, in the maximum density difference determination step of step # 4, the final output density is determined from VA and VB obtained for each of the groups A and B in the specific density difference determination step. Here, the one farthest from 0 is selected. For example, V
If A = -2 and VB = 5, VB is selected as the maximum density difference.

【0031】次にステップ#5の消去画像作成工程で、
最大濃度差決定工程で得られた最大濃度差に、パターン
消去画像における基準濃度を加える。基準濃度は、従来
例でふれたCと考え方が同じであり、基準濃度は0〜2
55階調の8ビット、256階調の場合、128階調に
する場合が多い。
Next, in the erased image creation process of step # 5,
The reference density in the pattern erased image is added to the maximum density difference obtained in the maximum density difference determination step. The concept of the reference density is the same as that of C described in the conventional example, and the reference density is 0 to 2
In the case of 8 bits of 55 gradations and 256 gradations, 128 gradations are often used.

【0032】図5(a)は、線状欠陥を有する繰り返し
パターンのパターン消去処理前の図で、図5(b)が処
理後の図である。パターン消去処理を行っても、線状欠
陥は消去されずに残っていることが分かる。
FIG. 5A is a diagram before the pattern erasing process of a repeated pattern having a linear defect, and FIG. 5B is a diagram after the process. It can be seen that even when the pattern erasing process is performed, the linear defect remains without being erased.

【0033】本発明ではステップ#4の最大濃度差決定
工程で、A群、B群それぞれから得られた濃度差で、0
から遠いものを選択せずに、0から近いものを選択する
ことにより、従来のパターン消去処理と同じものを実現
することができる。この場合は、ノイズ等の外乱に対し
て、より頑健性が増す。
In the present invention, in the maximum density difference determination step of step # 4, the density difference obtained from each of the groups A and B is 0%.
By selecting an object close to 0 without selecting an object far from the same, the same operation as the conventional pattern erasing process can be realized. In this case, the robustness with respect to disturbance such as noise is increased.

【0034】また、ステップ#4の最大濃度差決定工程
以外は、従来手法と共通化されているので、ハードウェ
ア等を従来のものと大幅に共通化することができる。
The steps other than the step of determining the maximum density difference in step # 4 are shared with the conventional method, so that the hardware and the like can be largely shared with the conventional method.

【0035】次に、パターンずれを有する場合の繰り返
しパターンの消去方法を、図6〜図8を参照して説明す
る。これは、被検査体が、液晶ディスプレイにおける欠
陥検査に適用した一例であり、パターン欠陥検査装置の
概略構成は、図1と同じである。
Next, a method of erasing a repetitive pattern when there is a pattern shift will be described with reference to FIGS. This is an example in which the object to be inspected is applied to a defect inspection in a liquid crystal display. The schematic configuration of the pattern defect inspection apparatus is the same as that in FIG.

【0036】パターンずれを有する繰り返しパターンの
消去方法は、図2の処理フローに対して、図6に示すよ
うに、最適濃度差決定工程を付加することにより実現し
ている。
The method of erasing a repetitive pattern having a pattern shift is realized by adding an optimum density difference determining step to the processing flow of FIG. 2, as shown in FIG.

【0037】図7に示すように、注目画素に対して規定
のパターンピッチ離れた位置に設けたC群と、C群に対
してパターンピッチのばらつき分(ここではα)離れた
位置に設けたD群の2つを、パターンの比較画素群とし
て設ける。
As shown in FIG. 7, a group C is provided at a position separated from the target pixel by a specified pattern pitch, and a group C is provided at a position separated from the group C by a variation in pattern pitch (here, α). Two of the D groups are provided as comparison pixel groups of the pattern.

【0038】注目画素と比較画素C群との間の濃度差
は、既に述べた複数濃度差検出工程と特定濃度差検出工
程により決定する。これにより、決定された濃度差をV
cとする。同様にして、注目画素と比較画素群D群との
濃度差も、複数濃度差検出工程と特定濃度差検出工程に
より決定する。これにより、決定された濃度差をVdと
する。
The density difference between the target pixel and the comparison pixel group C is determined by the plural density difference detection step and the specific density difference detection step described above. As a result, the determined density difference is expressed as V
c. Similarly, the density difference between the target pixel and the comparative pixel group D is determined by the multiple density difference detection step and the specific density difference detection step. Thereby, the determined density difference is set to Vd.

【0039】次にVc、Vdの中で、0に近いものを最
適濃度差とする。このとき、Vdに対して、適当な重み
付けを行ってもよい。たとえば、重み付け係数1.5と
して、Vc=4、Vd=3のときは重み付け後のVdは
4.5となるので、Vc=4を最適濃度差とする。
Next, one of Vc and Vd which is close to 0 is set as the optimum density difference. At this time, Vd may be appropriately weighted. For example, when Vc = 4 and Vd = 3 with a weighting factor of 1.5, Vd after weighting is 4.5, so Vc = 4 is set as the optimum density difference.

【0040】これにより、パターンピッチにばらつきが
ある場合でも、パターン消去が行える。図8(a)に対
して、本手法を適用したものが図8(b)である。パタ
ーンピッチにばらつきがある場合でも、パターン消去が
完全に行われていることが分かる。
Thus, pattern erasing can be performed even when the pattern pitch varies. FIG. 8B shows the result of applying this method to FIG. 8A. It can be seen that even when the pattern pitch varies, the pattern is completely erased.

【0041】さらに、これらの処理の後、欠陥検査を行
うことで、被検査体の検査を精度よく行うことができ
る。
Further, by performing a defect inspection after these processes, the inspection object can be inspected with high accuracy.

【0042】[0042]

【発明の効果】以上のように本発明によれば、線状欠陥
を有する繰り返しパターンの線状欠陥を消去することな
く、パターンのみを適切に消去することができる。
As described above, according to the present invention, only a pattern can be properly erased without erasing a linear defect of a repeated pattern having a linear defect.

【0043】また、線状欠陥を有しないことが既知であ
る被検査体の場合も、検出手法と装置のハードウェア等
を大幅に共有化することが可能である。
Also, in the case of an object to be inspected which is known not to have a linear defect, the detection method and the hardware of the apparatus can be largely shared.

【0044】さらに、パターンピッチのばらつきを有す
るパターンに対しても、パターンを残すことなく、上記
問題を解消してパターンを適切に消去することができ
る。
Further, even for a pattern having a variation in pattern pitch, the above problem can be solved and the pattern can be properly erased without leaving the pattern.

【0045】そして、欠陥検査を精度よく行うことがで
きるという有利な効果が得られる。
The advantageous effect that the defect inspection can be performed accurately can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態に係る欠陥検査装置の概略
構成図
FIG. 1 is a schematic configuration diagram of a defect inspection apparatus according to an embodiment of the present invention.

【図2】同実施形態の係る繰り返しパターン消去方法の
処理フロー図
FIG. 2 is a processing flowchart of a repeated pattern erasing method according to the embodiment;

【図3】同実施形態の係る繰り返しパターン消去方法の
比較画素群の配置を示す図
FIG. 3 is an exemplary view showing the arrangement of comparative pixel groups in the repeated pattern erasing method according to the embodiment;

【図4】同実施形態の係る繰り返しパターン消去方法の
比較画素群の位置関係を示す図
FIG. 4 is a view showing a positional relationship of a comparison pixel group in the repeated pattern erasing method according to the embodiment;

【図5】同実施形態の係る繰り返しパターン消去方法で
線状欠陥を有する場合に適用した時の処理前後の画像の
説明図
FIG. 5 is an explanatory diagram of an image before and after processing when applied to a case having a linear defect in the repeated pattern erasing method according to the embodiment.

【図6】同実施形態の係る繰り返しパターン消去方法で
パターンずれを有する場合の処理フロー図
FIG. 6 is a processing flowchart in the case where there is a pattern shift in the repeated pattern erasing method according to the embodiment;

【図7】同実施形態の係る繰り返しパターン消去方法の
比較画素群の配置を示す図
FIG. 7 is a view showing the arrangement of comparative pixel groups in the repeated pattern erasing method according to the embodiment;

【図8】同実施形態の係る繰り返しパターン消去方法で
パターンずれを有する場合に適用した時の処理前後の画
像の説明図
FIG. 8 is an explanatory diagram of an image before and after processing when applied to a case where there is a pattern shift in the repeated pattern erasing method according to the embodiment.

【図9】従来例の繰り返しパターン消去方法の説明図FIG. 9 is an explanatory view of a conventional repeated pattern erasing method.

【図10】線状欠陥を有する場合における、従来例の繰
り返しパターン消去方法での処理前後の画像の説明図
FIG. 10 is an explanatory diagram of an image before and after processing by a conventional repeated pattern erasing method when a linear defect is present.

【図11】従来例の繰り返しパターン消去方法での処理
前後の画像の説明図
FIG. 11 is an explanatory diagram of an image before and after processing by a conventional repeated pattern erasing method.

【符号の説明】[Explanation of symbols]

1 被検査体 3 撮像素子 4 コンピュータ DESCRIPTION OF SYMBOLS 1 Inspection object 3 Image sensor 4 Computer

───────────────────────────────────────────────────── フロントページの続き (72)発明者 川野 肇 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 吉井 宏治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Fターム(参考) 5B057 AA03 BA02 CA02 CA08 CA12 CA16 DA03 DB02 DB05 DB09 DC22 5L096 AA03 AA06 BA03 CA14 DA01 EA37 FA17 GA07 GA51  ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Hajime Kawano 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Koji Yoshii 1006 Kadoma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial F Terms (reference) 5B057 AA03 BA02 CA02 CA08 CA12 CA16 DA03 DB02 DB05 DB09 DC22 5L096 AA03 AA06 BA03 CA14 DA01 EA37 FA17 GA07 GA51

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 被検査体を撮像して得られた濃淡画像中
における繰り返しパターンを消去する方法であって、注
目画素とこの注目画素と同じ列上に配置された比較画素
群Aおよびその比較画素群Aとは垂直方向に配置された
比較画素群Bとのそれぞれの濃度差から最も0に近い濃
度差を求める特定濃度差決定工程と、比較画素群Aに対
する特定濃度差と比較画素群Bに対する特定濃度差を比
較して0から遠い濃度差を決定する最大濃度差決定工程
と、最大濃度差をパターン消去画像における基準濃度に
対して加えるパターン消去画像生成工程とを有すること
を特徴とする繰り返しパターン消去方法。
1. A method for erasing a repetitive pattern in a grayscale image obtained by imaging an object to be inspected, comprising: a pixel of interest; a comparative pixel group A arranged on the same column as the pixel of interest; A specific density difference determining step of obtaining a density difference closest to 0 from each density difference between the pixel group A and the comparative pixel group B arranged in the vertical direction; a specific density difference for the comparative pixel group A; A maximum density difference determining step of determining a density difference far from 0 by comparing a specific density difference with respect to the pattern density, and a pattern erasing image generating step of adding the maximum density difference to a reference density in the pattern erasing image. Repeated pattern erasing method.
【請求項2】 最大濃度差決定工程は、比較画素群Aに
対する特定濃度差と比較画素群Bに対する特定濃度差の
比較方法を0から近い方を選択することもできる切り替
え工程を有することを特徴とする請求項1に記載の繰り
返しパターン消去方法。
2. The method according to claim 1, wherein the maximum density difference determining step includes a switching step of selecting a method of comparing the specific density difference with respect to the comparison pixel group A and the specific density difference with respect to the comparison pixel group B from 0. 2. The repeated pattern erasing method according to claim 1, wherein
【請求項3】 比較画素群A、Bに対しパターンピッチ
のずれ量を考慮した比較画素群Dを設けてこの比較画素
群Dに対する特定濃度差を決定し、注目画素と前記比較
画素群A、Bおよび前記比較画素群Dとのそれぞれの特
定濃度差から最も0に近い濃度差を求めて特定濃度差と
する最適濃度差決定工程を有することを特徴とする請求
項1、2のいずれかに記載の繰り返しパターン消去方
法。
3. A comparison pixel group D in which a shift amount of a pattern pitch is taken into consideration with respect to the comparison pixel groups A and B, and a specific density difference with respect to the comparison pixel group D is determined. 3. The method according to claim 1, further comprising the step of: determining a density difference closest to 0 from each specific density difference between B and the comparative pixel group D and setting the density difference as a specific density difference. The repeated pattern erasing method described above.
【請求項4】 請求項1〜3のいずれかに記載の繰り返
しパターン消去を行った後、被検査体の欠陥検査を行う
ことを特徴とする欠陥検査方法。
4. A defect inspection method, comprising: performing a defect inspection of an object to be inspected after performing the repeated pattern erasure according to claim 1;
【請求項5】 被検査体を撮像する撮像手段と、この撮
像手段によって得られた濃淡画像中の注目画素とこの注
目画素と同じ列上に配置された比較画素群Aおよびその
比較画素群Aとは垂直方向に配置された比較画素群Bと
のそれぞれの濃度差から最も0に近い濃度差を求める特
定濃度差決定手段と、比較画素群Aに対する特定濃度差
と比較画素群Bに対する特定濃度差を比較して0から遠
い濃度差を決定する最大濃度差決定手段と、最大濃度差
をパターン消去画像における基準濃度に対して加えるパ
ターン消去画像生成手段とを有することを特徴とする欠
陥検査装置。
5. An image pickup means for picking up an image of an object to be inspected, a pixel of interest in a grayscale image obtained by the image pickup means, a comparative pixel group A arranged on the same column as the pixel of interest, and the comparative pixel group A Means a specific density difference determining means for obtaining a density difference closest to 0 from each density difference with a comparative pixel group B arranged vertically, a specific density difference for the comparative pixel group A and a specific density difference for the comparative pixel group B. A defect inspection apparatus comprising: a maximum density difference determining means for comparing a difference to determine a density difference far from 0; and a pattern erased image generating means for adding the maximum density difference to a reference density in the pattern erased image. .
JP2001051786A 2001-02-27 2001-02-27 Defect inspection method Expired - Fee Related JP4560969B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007086056A (en) * 2005-08-26 2007-04-05 Seiko Epson Corp Defect detection method and defect detecting device
JP2008224256A (en) * 2007-03-09 2008-09-25 Matsushita Electric Ind Co Ltd Electrode inspection method
JP2009074828A (en) * 2007-09-19 2009-04-09 Seiko Epson Corp Flaw detection method and flaw detector
CN101600957B (en) * 2007-01-16 2012-05-16 奥林巴斯株式会社 Defect detecting device, and defect detecting method

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JPH0547887A (en) * 1991-08-15 1993-02-26 Hitachi Electron Eng Co Ltd Deletion of detected data of repetition pattern
JP2635758B2 (en) * 1989-03-28 1997-07-30 株式会社東芝 Defect identification device
JP2001043378A (en) * 1999-08-02 2001-02-16 Matsushita Electric Ind Co Ltd Repeat pattern erasing method and pattern defect inspecting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635758B2 (en) * 1989-03-28 1997-07-30 株式会社東芝 Defect identification device
JPH0547887A (en) * 1991-08-15 1993-02-26 Hitachi Electron Eng Co Ltd Deletion of detected data of repetition pattern
JP2001043378A (en) * 1999-08-02 2001-02-16 Matsushita Electric Ind Co Ltd Repeat pattern erasing method and pattern defect inspecting device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007086056A (en) * 2005-08-26 2007-04-05 Seiko Epson Corp Defect detection method and defect detecting device
US7978903B2 (en) 2005-08-26 2011-07-12 Seiko Epson Corporation Defect detecting method and defect detecting device
CN101600957B (en) * 2007-01-16 2012-05-16 奥林巴斯株式会社 Defect detecting device, and defect detecting method
JP2008224256A (en) * 2007-03-09 2008-09-25 Matsushita Electric Ind Co Ltd Electrode inspection method
JP2009074828A (en) * 2007-09-19 2009-04-09 Seiko Epson Corp Flaw detection method and flaw detector

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