JP2002252080A - Electric field light-emitting element - Google Patents
Electric field light-emitting elementInfo
- Publication number
- JP2002252080A JP2002252080A JP2001047322A JP2001047322A JP2002252080A JP 2002252080 A JP2002252080 A JP 2002252080A JP 2001047322 A JP2001047322 A JP 2001047322A JP 2001047322 A JP2001047322 A JP 2001047322A JP 2002252080 A JP2002252080 A JP 2002252080A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- inorganic material
- substrate
- electroluminescent device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005684 electric field Effects 0.000 title abstract description 6
- 239000010408 film Substances 0.000 claims abstract description 111
- 239000010409 thin film Substances 0.000 claims abstract description 69
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 47
- 239000011147 inorganic material Substances 0.000 claims abstract description 46
- 239000002861 polymer material Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 22
- 238000004544 sputter deposition Methods 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 7
- 238000002347 injection Methods 0.000 abstract description 15
- 239000007924 injection Substances 0.000 abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 14
- 239000001301 oxygen Substances 0.000 abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 3
- 229920006254 polymer film Polymers 0.000 abstract description 3
- 230000004888 barrier function Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000009545 invasion Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- 229920005989 resin Polymers 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 239000004695 Polyether sulfone Substances 0.000 description 3
- -1 aromatic tertiary amine Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 229920000307 polymer substrate Polymers 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- IUFDZNVMARBLOJ-UHFFFAOYSA-K aluminum;quinoline-2-carboxylate Chemical compound [Al+3].C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21.C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IUFDZNVMARBLOJ-UHFFFAOYSA-K 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、電界発光素子、よ
り具体的にはエレクトロルミネッセンス発光素子に関す
るものであり、特に有機発光材料を使用した発光素子の
作動安定化に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electroluminescent device, and more particularly, to an electroluminescent light emitting device, and more particularly, to stabilizing the operation of a light emitting device using an organic light emitting material.
【０００２】[0002]
【従来の技術】電界発光素子は、その発光励起機構の違
いから、発光層内での電子や正孔の局所的な移動により
発光体を励起し、交流電界でのみ発光する真性電界発光
素子と、電極からの電子と正孔の注入とその発光素子層
内での再結合により発光体を励起し、直流電界で作動す
るキャリア注入型電界発光素子との２つに分類される。2. Description of the Related Art An electroluminescent device is different from an intrinsic electroluminescent device that excites a luminous body by local movement of electrons and holes in a luminescent layer and emits light only in an alternating electric field due to a difference in a luminescence excitation mechanism. And a carrier-injection type electroluminescent device that operates by a DC electric field by exciting a luminescent material by injecting electrons and holes from electrodes and recombining them in a light emitting device layer.
【０００３】真性電界発光型の発光素子は、一般にＺｎ
Ｓ、ＣａＳ、ＳｒＳにＭｎやＣｅなどの希土類金属を添
加した無機化合物を発光体とするものであるが、駆動に
２００Ｖ程度の高い交流電界を必要とすること、周辺回
路の製造コストが高いこと、輝度や耐久性も不充分であ
るなどの問題点がある。[0003] Intrinsic electroluminescent type light emitting devices are generally Zn
S, CaS, and SrS are used as the luminous body with an inorganic compound obtained by adding a rare earth metal such as Mn or Ce. However, a high AC electric field of about 200 V is required for driving, and the manufacturing cost of peripheral circuits is high. In addition, there are problems such as insufficient brightness and durability.
【０００４】一方、キャリア注入型電界発光素子は、発
光層として薄膜状有機化合物を用いるようになってから
高輝度のものが得られるようになった。Applied Physic
s Letters、.51(12)巻、913頁(1987年刊)には、陽極、
有機正孔注入移動体、有機電子注入性発光体及び陰極か
らなる電界発光素子が開示されており、有機正孔注入移
動材料として芳香族第アミンを使用し、また有機電子注
入性発光体材料としてアルミニュウムキノレート錯体を
使用した電界発光素子について報告されている。On the other hand, a carrier-injection type electroluminescence device has been able to obtain a high-luminance device since a thin-film organic compound has been used as a light-emitting layer. Applied Physic
s Letters, .51 (12), p. 913 (1987)
An electroluminescent element comprising an organic hole injection moving body, an organic electron injecting light emitting body and a cathode is disclosed, using an aromatic tertiary amine as the organic hole injecting moving material, and as an organic electron injecting light emitting material. An electroluminescent device using an aluminum quinolate complex has been reported.
【０００５】最近では発光材料、正孔輸送材料、電子輸
送材料、電極材料として様々な提案がなされており、発
光効率、発光強度、発光色、発光素子寿命のいずれにお
いても目覚しい特性改善が進んでいる。また、ポリフェ
ニレンビニレン（ＰＰＶ）などの有機高分子材料を発光
材料として使用した発光素子の開発もさかんである。Recently, various proposals have been made as a light emitting material, a hole transport material, an electron transport material, and an electrode material, and remarkable improvements have been made in all of luminous efficiency, luminous intensity, luminous color, and light emitting element life. I have. Further, development of a light emitting element using an organic polymer material such as polyphenylene vinylene (PPV) as a light emitting material is also active.
【０００６】[0006]
【発明が解決しようとする課題】キャリア注入型電界発
光素子に使用される有機材料や電極材料は水や酸素によ
って反応しやすいものが多く、水や酸素の存在下におい
ては発光特性の劣化が著しいことが報告されている。こ
のため、水や酸素を透過しないガラス基板が主として用
いられている。また、ガラス基板上に発光素子を形成し
たのち、例えば特開平９−１４８０６６号公報に開示さ
れているような気密性容器を用いて発光素子が外気に接
することがないようにしている。The organic materials and electrode materials used in the carrier-injection type electroluminescent device are often susceptible to reaction with water or oxygen, and in the presence of water or oxygen, the emission characteristics are significantly deteriorated. It has been reported. For this reason, a glass substrate that does not transmit water or oxygen is mainly used. Further, after the light emitting element is formed on the glass substrate, the light emitting element is prevented from coming into contact with the outside air by using, for example, an airtight container as disclosed in Japanese Patent Application Laid-Open No. 9-148066.
【０００７】一方、携帯電話やノート型パーソナルコン
ピュータのように携帯性が重要である用途においては、
より軽く、より薄型の表示装置が必要とされている。こ
のため、従来のガラス基板ではなくポリマー材料を基板
として利用したキャリア注入型電界発光素子が提案され
ている。例えば特開平１０−１４４４６９号公報には、
表面が平滑な光硬化性樹脂基板を使用した電界発光素子
について記載されている。また、日本国特許第２９３１
２１１号では、レンズ加工したプラスチックシートを基
板に使用している。しなしながら、従来の方法では基板
上に形成した発光素子をガラス薄板や金属キャップで被
覆する必要があり、基板をポリマー化した意味が半減し
てしまう。このため、ポリマー材料を基板として使用し
たキャリア注入型電界発光素子はいまだ実用化に至って
いない。On the other hand, in applications where portability is important, such as mobile phones and notebook personal computers,
There is a need for a lighter and thinner display device. For this reason, a carrier injection type electroluminescent device using a polymer material as a substrate instead of a conventional glass substrate has been proposed. For example, in Japanese Patent Application Laid-Open No. 10-144469,
An electroluminescent device using a photocurable resin substrate having a smooth surface is described. Also, Japanese Patent No. 2931
No. 211 uses a lens-processed plastic sheet for the substrate. However, in the conventional method, it is necessary to cover the light emitting element formed on the substrate with a thin glass plate or a metal cap, and the meaning of polymerizing the substrate is reduced by half. For this reason, a carrier injection type electroluminescent device using a polymer material as a substrate has not yet been put to practical use.
【０００８】本発明は、上述のごとき実情に鑑みてなさ
れたものであり、基板としてポリマー材料を使用したキ
ャリア注入型電界発光素子において、安定した発光動作
を実現することを目的とするものである。The present invention has been made in view of the above situation, and has as its object to realize a stable light emitting operation in a carrier injection type electroluminescent device using a polymer material as a substrate. .
【０００９】[0009]
【課題を解決するための手段】請求項１の発明は、基板
上に積層された電極膜と有機発光材料による有機薄膜と
により、対向する該電極膜間に前記有機薄膜が配された
構成を有する電界発光素子において、前記基板は、ポリ
マー材料を基材としたフィルムもしくはシートであり、
かつ前記電極膜及び前記有機薄膜は、ポリマー材料層と
無機材料薄膜からなる積層膜によって被覆されているこ
とを特徴としたものである。According to a first aspect of the present invention, there is provided a structure in which an organic thin film made of an organic light emitting material and an organic thin film made of an organic light emitting material are provided between the opposed electrode films. In the electroluminescent device having, the substrate is a film or sheet based on a polymer material,
Further, the electrode film and the organic thin film are covered with a laminated film composed of a polymer material layer and an inorganic material thin film.
【００１０】請求項２の発明は、請求項１の発明におい
て、前記電極膜及び前記有機薄膜を被覆する無機材料薄
膜の膜厚は、１００〜５００ｎｍの範囲にあることを特
徴としたものである。A second aspect of the present invention is characterized in that, in the first aspect of the present invention, the thickness of the inorganic material thin film covering the electrode film and the organic thin film is in a range of 100 to 500 nm. .
【００１１】請求項３の発明は、請求項１または２の発
明において、前記電極膜及び前記有機薄膜を被覆する前
記積層膜は、複数の前記ポリマー材料層及び複数の前記
無機材料薄膜からなることを特徴としたものである。According to a third aspect of the present invention, in the first or second aspect, the laminated film covering the electrode film and the organic thin film comprises a plurality of the polymer material layers and a plurality of the inorganic material thin films. It is characterized by.
【００１２】請求項４の発明は、請求項１ないし３のい
ずれか１の発明において、前記無機材料薄膜は、スパッ
タリング法によって製膜された膜であることを特徴とし
たものである。According to a fourth aspect of the present invention, in any one of the first to third aspects of the present invention, the inorganic material thin film is a film formed by a sputtering method.
【００１３】請求項５の発明は、請求項１ないし４のい
ずれか１の発明において、前記無機材料薄膜は、金属酸
化膜であることを特徴としたものである。According to a fifth aspect of the present invention, in any one of the first to fourth aspects of the invention, the inorganic material thin film is a metal oxide film.
【００１４】請求項６の発明は、請求項１ないし４のい
ずれか１の発明において、前記無機材料薄膜は、金属窒
化膜であることを特徴としたものである。According to a sixth aspect of the present invention, in any one of the first to fourth aspects of the present invention, the inorganic material thin film is a metal nitride film.
【００１５】請求項７の発明は、請求項１ないし４のい
ずれか１の発明において、前記無機材料薄膜は、金属膜
であることを特徴としたものである。A seventh aspect of the present invention is the invention according to any one of the first to fourth aspects, wherein the inorganic material thin film is a metal film.
【００１６】[0016]
【発明の実施の形態】本発明は、水蒸気透過率及び酸素
透過率を低減したポリマーの基板を使用するとともに、
該基板上に形成した電極膜と有機薄膜による発光素子を
ポリマー材料層と無機材料薄膜から成る積層体によって
被覆することによって、ポリマー基板の軽量、薄型とい
う特性をそのままに、外部から発光素子への水や酸素の
進入を防ぎ、発光素子の劣化を防止することができるも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention uses a polymer substrate having reduced water vapor transmission rate and oxygen transmission rate,
By covering the light emitting element formed of the electrode film and the organic thin film on the substrate with a laminate composed of the polymer material layer and the inorganic material thin film, the light emitting element can be externally applied to the light emitting element while maintaining the lightweight and thin characteristics of the polymer substrate. Water and oxygen can be prevented from entering, and deterioration of the light-emitting element can be prevented.
【００１７】ポリマー材料の酸素透過率及び水蒸気透過
率はポリマーの種類によって大きく異なる。比較的ガス
バリア性に優れているといわれるポリエチレンテレフタ
レート（ＰＥＴ）における酸素透過率は４（ｍｌ・ｍｍ
／ｍ2・２４Ｈ・ａｔｍ）程度であり、単一のポリマー
材料で素子を被覆し、外部から水や酸素の進入を防ぐこ
とは難しい。The oxygen permeability and water vapor permeability of the polymer material vary greatly depending on the type of polymer. The oxygen permeability of polyethylene terephthalate (PET), which is said to be relatively excellent in gas barrier properties, is 4 (ml · mm
/ M 2 · 24H · atm), and it is difficult to cover the element with a single polymer material and prevent water or oxygen from entering from the outside.
【００１８】これに対して、金属酸化膜、金属窒化膜、
金属膜等の無機材料は薄膜状態においても水蒸気や酸素
の透過を防ぐことが可能である。無機材料薄膜の製膜方
法には蒸着法、スパッタリング法及び熱分解しやすい有
機金属材料を塗布したのち加熱することによって金属酸
化物を製膜する方法などがあるが、スパッタリングによ
って形成した無機薄膜は緻密な膜構造とすることが可能
であり、封止性能に優れている。On the other hand, a metal oxide film, a metal nitride film,
An inorganic material such as a metal film can prevent permeation of water vapor and oxygen even in a thin film state. Inorganic material thin film forming methods include a vapor deposition method, a sputtering method, a method of forming a metal oxide by applying a heat-decomposable organometallic material, and then heating. It is possible to have a dense film structure, and it is excellent in sealing performance.
【００１９】スパッタリングとは、加速したイオン粒子
をターゲット材料に衝突させ、その衝突のエネルギーに
よってターゲット材料を物理的に飛散させて薄膜を製膜
する方法である。しかしながら、有機発光材料から成る
発光素子は加速したイオンのようなエネルギー粒子によ
って著しく劣化するため、基板上に形成した発光素子を
スパッタリング環境に直接さらすことはできない。ま
た、上記金属酸化膜、金属窒化膜、金属膜等の無機材料
薄膜は、その膜厚が増加するに従って膜内の応力や外部
からの外力によって膜剥離や亀裂を生じてしまう。Sputtering is a method in which accelerated ion particles collide with a target material and the target material is physically scattered by the energy of the collision to form a thin film. However, a light-emitting element formed of an organic light-emitting material is significantly deteriorated by energetic particles such as accelerated ions, so that a light-emitting element formed on a substrate cannot be directly exposed to a sputtering environment. In addition, as the thickness of the inorganic material thin film such as the metal oxide film, the metal nitride film, and the metal film increases, the film peels or cracks due to stress in the film or external force from outside as the film thickness increases.
【００２０】そこで、ポリマー基板上に形成した発光素
子をアクリル、エポキシ、ポリイミド等のポリマー樹脂
で被覆したのち、金属酸化膜、金属窒化膜、金属膜等の
無機薄膜を積層することによって、発光素子を劣化させ
ることなく高い封止能力をもった被覆膜を得ることがで
きた。以下実施例にて詳細に説明する。Therefore, the light emitting device formed on the polymer substrate is coated with a polymer resin such as acrylic, epoxy, polyimide or the like, and then an inorganic thin film such as a metal oxide film, a metal nitride film, or a metal film is laminated thereon. A coating film having high sealing ability could be obtained without deteriorating. Hereinafter, the embodiment will be described in detail.
【００２１】（実施例１）図１は、本発明の電界発光素
子の第１ないし第４の実施例における積層構造を説明す
るための概略構成図で、図中、１はポリマーフィルムに
よる基板、２はＳｉＯｘ膜、３はＩＴＯ透明電極膜、４
は正孔注入層、５は有機発光材料による有機薄膜、６は
陰極膜、７はポリマー材料層、８は無機材料薄膜であ
る。(Embodiment 1) FIG. 1 is a schematic structural view for explaining a laminated structure of an electroluminescent device according to the first to fourth embodiments of the present invention, wherein 1 is a substrate made of a polymer film, 2 is a SiOx film, 3 is an ITO transparent electrode film, 4
Is a hole injection layer, 5 is an organic thin film made of an organic light emitting material, 6 is a cathode film, 7 is a polymer material layer, and 8 is an inorganic material thin film.
【００２２】厚さ１００μｍのポリカーボネイト（Ｐ
Ｃ）フィルムを水系洗浄剤及びイソプロピルアルコール
中で超音波洗浄後、１００℃で乾燥した。このフィルム
を基板１として、該基板１の片面に、スパッタリング法
によりＳｉＯｘ膜（ｘ：１.５〜２.５）２を３００ｎｍ
の膜厚で製膜した。続いて、基板の同じ面側にスパッタ
法によりＩＴＯ透明導電膜３を１２０ｎｍの厚さで製膜
した。ＩＴＯ透明電極膜２の製膜時の基板温度はＰＣの
耐熱性を考慮して１００℃とした。Polycarbonate having a thickness of 100 μm (P
C) The film was subjected to ultrasonic cleaning in an aqueous cleaning agent and isopropyl alcohol, and then dried at 100 ° C. Using this film as a substrate 1, a SiOx film (x: 1.5 to 2.5) 2 was formed on one surface of the substrate 1 by a sputtering method to a thickness of 300 nm.
The film was formed with the following film thickness. Subsequently, an ITO transparent conductive film 3 having a thickness of 120 nm was formed on the same surface side of the substrate by sputtering. The substrate temperature at the time of forming the ITO transparent electrode film 2 was set to 100 ° C. in consideration of the heat resistance of PC.
【００２３】次に正孔注入層４として、Ｎ，Ｎ'−ｂｉ
ｓ（３−ｍｅｔｈｙｌｐｈｅｎｙｌ）−Ｎ，Ｎ'−ｄｉ
ｐｈｅｎｙｌ−［１，１'−ｂｉｐｈｅｎｙｌ］−４，
４'ｄｉａｍｉｎｅ（ＴＰＤ）を３０ｎｍで成膜し、さ
らに有機発光材料による有機薄膜５としてｔｒｉｓ（８
−ｑｕｉｎｏｌｉｎｏｌａｔｏ）ａｌｕｍｉｎｕｍ（Ａ
ｌｑ３）を真空蒸着で５０ｎｍ製膜した。Next, as the hole injection layer 4, N, N'-bi
s (3-methylphenyl) -N, N'-di
phenyl- [1,1′-biphenyl] -4,
4′diamine (TPD) is formed to a thickness of 30 nm, and tris (8) is formed as an organic thin film 5 made of an organic light emitting material.
-Quinolinolato) aluminum (A
lq3) was formed into a 50 nm film by vacuum evaporation.
【００２４】ひき続きマグネシュウムと銀をその組成比
が１０：１となるように厚さが１００ｎｍ共蒸着して発
光素子の上電極（陰極膜６）を形成した。続いてポリマ
ー材料層７としてスリーボンド社製の光硬化性樹脂３０
５２を塗布したのち、紫外線を照射して樹脂を硬化させ
た。Subsequently, magnesium and silver were co-deposited with a thickness of 100 nm so that the composition ratio was 10: 1 to form an upper electrode (cathode film 6) of the light emitting element. Subsequently, as a polymer material layer 7, a photo-curable resin 30 manufactured by Three Bond Co., Ltd.
After application of No. 52, the resin was cured by irradiating ultraviolet rays.
【００２５】次に、スパッタリング法によって酸化シリ
コン膜ＳｉＯｘ（ｘ：１.５〜２.５）による無機材料薄
膜８を３０から１０００ｎｍの範囲の厚さで製膜した。
このときのスパッタガスはアルゴンと酸素の混合ガスで
ある。Next, an inorganic material thin film 8 of a silicon oxide film SiOx (x: 1.5 to 2.5) was formed in a thickness of 30 to 1000 nm by a sputtering method.
The sputtering gas at this time is a mixed gas of argon and oxygen.
【００２６】（実施例２）厚さ１００μｍのポリカーボ
ネイト（ＰＣ）フィルムを水系洗浄剤及びイソプロピル
アルコール中で超音波洗浄後、１００℃で乾燥した。こ
のフィルムを基板１として、該基板１にスパッタリング
法により、ＳｉＯｘ膜（ｘ：１．５〜２．５）２を２０
０ｎｍの厚さで製膜した。(Example 2) A polycarbonate (PC) film having a thickness of 100 µm was ultrasonically washed in an aqueous detergent and isopropyl alcohol, and then dried at 100 ° C. Using this film as a substrate 1, an SiOx film (x: 1.5 to 2.5) 2 is formed on the substrate 1 by sputtering.
A film was formed with a thickness of 0 nm.
【００２７】続いて、スパッタリング法によりＩＴＯ透
明導電膜３を１２０ｎｍの厚さで製膜した。次に正孔注
入層４として、Ｎ，Ｎ'−ｂｉｓ（３−ｍｅｔｈｙｌｐ
ｈｅｎｙｌ）−Ｎ，Ｎ'−ｄｉｐｈｅｎｙｌ−［１，１'
−ｂｉｐｈｅｎｙｌ］−４，４'ｄｉａｍｉｎｅ（ＴＰ
Ｄ）を３０ｎｍで成膜し、さらに有機発光材料による有
機薄膜５としてｔｒｉｓ（８−ｑｕｉｎｏｌｉｎｏｌａ
ｔｏ）ａｌｕｍｉｎｕｍ（Ａｌｑ３）を真空蒸着で５０
ｎｍの厚さで製膜した。Subsequently, an ITO transparent conductive film 3 was formed to a thickness of 120 nm by a sputtering method. Next, as the hole injection layer 4, N, N′-bis (3-methylp
henyl) -N, N'-diphenyl- [1,1 '
-Biphenyl] -4,4'diamine (TP
D) is formed to a thickness of 30 nm, and tris (8-quinolinola) is formed as an organic thin film 5 of an organic light emitting material.
to) aluminum (Alq3) by vacuum evaporation to 50
The film was formed with a thickness of nm.
【００２８】ひき続きマグネシュウムと銀をその組成比
が１０：１となるように１００ｎｍ共蒸着して発光素子
の上電極（陰極６）を形成した。続いてポリマー材料層
７としてスリーボンド社製の光硬化性樹脂３０５２を塗
布したのち、紫外線を照射して樹脂を硬化させた。次
に、スパッタリング法によって膜厚１００ｎｍの酸化ア
ルミニュウム膜ＡｌＯｘ（ｘ：１．５〜２．５）による
無機材料薄膜８を製膜した。このときのスパッタガスは
アルゴンと酸素の混合ガスである。Subsequently, magnesium and silver were co-deposited at a composition ratio of 10: 1 to 100 nm to form an upper electrode (cathode 6) of the light emitting device. Subsequently, a photocurable resin 3052 manufactured by Three Bond Co. was applied as the polymer material layer 7, and then the resin was cured by irradiating ultraviolet rays. Next, an inorganic material thin film 8 was formed from a 100 nm-thick aluminum oxide film AlOx (x: 1.5 to 2.5) by a sputtering method. The sputtering gas at this time is a mixed gas of argon and oxygen.
【００２９】（実施例３）厚さ１００μｍのポリエーテ
ルサルフォンフィルムを水系洗浄剤及びイソプロピルア
ルコール中で超音波洗浄後、１００℃で乾燥した。この
フィルムを基板１として、該基板１の両面にスパッタリ
ング法により、ＳｉＯｘ膜（ｘ：１.５〜２.５）２を２
００ｎｍの厚さで製膜した。続いて片方の面だけに同じ
くスパッタ法でＩＴＯ透明導電膜３を１２０ｎｍの厚さ
で製膜した。Example 3 A 100 μm-thick polyethersulfone film was subjected to ultrasonic cleaning in an aqueous detergent and isopropyl alcohol, and then dried at 100 ° C. Using this film as a substrate 1, two SiOx films (x: 1.5 to 2.5) 2 were formed on both surfaces of the substrate 1 by sputtering.
A film was formed with a thickness of 00 nm. Subsequently, an ITO transparent conductive film 3 was formed in a thickness of 120 nm on only one surface by the same sputtering method.
【００３０】次に正孔注入層４としてＮ，Ｎ'−ｂｉｓ
（３−ｍｅｔｈｙｌｐｈｅｎｙｌ）−Ｎ，Ｎ'−ｄｉｐ
ｈｅｎｙｌ−［１，１'−ｂｉｐｈｅｎｙｌ］−４，４'
ｄｉａｍｉｎｅ（ＴＰＤ）を３０ｎｍで製膜し、さらに
有機発光材料による有機薄膜５としてｔｒｉｓ（８−ｑ
ｕｉｎｏｌｉｎｏｌａｔｏ）ａｌｕｍｉｎｕｍ（Ａｌｑ
３）を真空蒸着で５０ｎｍの厚さで製膜した。Next, as the hole injection layer 4, N, N'-bis
(3-methylphenyl) -N, N'-dip
henyl- [1,1'-biphenyl] -4,4 '
diamine (TPD) is formed to a thickness of 30 nm, and tris (8-q
uinolinolato) aluminum (Alq
3) was formed into a film with a thickness of 50 nm by vacuum evaporation.
【００３１】ひき続きマグネシュウムと銀をその組成比
が１０：１となるように１００ｎｍ共蒸着して発光素子
の上電極（陰極膜６）を形成した。続いてポリマー材料
層７としてスリーボンド社製の光硬化性樹脂３０５２を
塗布したのち、紫外線を照射して樹脂を硬化させた。次
に、スパッタリング法によって膜厚１００ｎｍの窒化ア
ルミニュウム膜ＡｌＮｘ（ｘ：０.５〜１.０）による無
機材料薄膜８を製膜した。このときのスパッタガスはア
ルゴンと窒素の混合ガスである。Subsequently, 100 nm of magnesium and silver were co-deposited so that the composition ratio became 10: 1 to form an upper electrode (cathode film 6) of the light emitting element. Subsequently, a photocurable resin 3052 manufactured by Three Bond Co. was applied as the polymer material layer 7, and then the resin was cured by irradiating ultraviolet rays. Next, an inorganic material thin film 8 was formed from a 100 nm-thick aluminum nitride film AlNx (x: 0.5 to 1.0) by a sputtering method. The sputtering gas at this time is a mixed gas of argon and nitrogen.
【００３２】（実施例４）実施例３と同様に厚さ１００
μｍのポリエーテルサルフォンフィルムを水系洗浄剤及
びイソプロピルアルコール中で超音波洗浄後、１００℃
で乾燥した。このフィルムを基板１として、該基板１の
両面にスパッタ法により、ＳｉＯｘ膜（ｘ：１.５〜２.
５）２と２００ｎｍの厚さで製膜した。続いて片方の面
だけに同じくスパッタ法でＩＴＯ透明導電膜３を１２０
ｎｍの厚さで製膜した。次に正孔注入層４としてＮ，
Ｎ'−ｂｉｓ（３−ｍｅｔｈｙｌｐｈｅｎｙｌ）−Ｎ，
Ｎ'−ｄｉｐｈｅｎｙｌ−［１，１'−ｂｉｐｈｅｎｙ
ｌ］−４，４'ｄｉａｍｉｎｅ（ＴＰＤ）を３０ｎｍ、
有機発光材料による有機薄膜５としてｔｒｉｓ（８−ｑ
ｕｉｎｏｌｉｎｏｌａｔｏ）ａｌｕｍｉｎｕｍ（Ａｌｑ
３）を真空蒸着で５０ｎｍ製膜した。(Embodiment 4) Thickness 100 in the same manner as in Embodiment 3.
μm polyethersulfone film was ultrasonically washed in an aqueous detergent and isopropyl alcohol, and then heated to 100 ° C.
And dried. Using this film as the substrate 1, an SiOx film (x: 1.5 to 2.5.
5) Films were formed at thicknesses of 2 and 200 nm. Subsequently, the ITO transparent conductive film 3 was also applied to only one side by the same sputtering method.
The film was formed with a thickness of nm. Next, as the hole injection layer 4, N,
N'-bis (3-methylphenyl) -N,
N'-diphenyl- [1,1'-biphenyl
l] -4,4'diamine (TPD) is 30 nm,
The tris (8-q
uinolinolato) aluminum (Alq
3) was formed into a 50 nm film by vacuum evaporation.
【００３３】ひき続きマグネシュウムと銀をその組成比
が１０：１となるように１００ｎｍ共蒸着して発光素子
の上電極（陰極６）を形成した。続いてポリマー材料層
７としてスリーボンド社製の光硬化性樹脂３０５２を塗
布したのち、紫外線を照射して樹脂を硬化させた。次
に、スパッタリング法によって膜厚１００ｎｍの金属ア
ルミニュウム膜による無機材料膜８を製膜した。このと
きのスパッタガスはアルゴンガスである。Subsequently, magnesium and silver were co-deposited with a thickness of 100 nm so that the composition ratio became 10: 1 to form an upper electrode (cathode 6) of the light emitting element. Subsequently, a photocurable resin 3052 manufactured by Three Bond Co. was applied as the polymer material layer 7, and then the resin was cured by irradiating ultraviolet rays. Next, an inorganic material film 8 of a 100-nm-thick metal aluminum film was formed by a sputtering method. The sputtering gas at this time is an argon gas.
【００３４】（実施例５）図２は、本発明の電界発光素
子の第５の実施例における積層構造を説明するための概
略構成図で、図中、７ａ，７ｂはそれぞれ第１及び第２
のポリマー材料層、８ａ，８ｂはそれぞれ第１及び第２
の無機材料薄膜で、その他図１と同様の機能を有する部
分には、図１と同じ符号が付してある。(Embodiment 5) FIG. 2 is a schematic structural view for explaining a laminated structure of an electroluminescent device according to a fifth embodiment of the present invention. In the drawing, reference numerals 7a and 7b denote first and second layers, respectively.
The polymer material layers 8a and 8b are first and second layers, respectively.
Other portions having the same functions as those in FIG. 1 are denoted by the same reference numerals as those in FIG.
【００３５】実施例３と同様に厚さ１００μｍのポリエ
ーテルサルフォンフィルムを水系洗浄剤及びイソプロピ
ルアルコール中で超音波洗浄後、１００℃で乾燥した。
このフィルムを基板１として、該基板１の両面にスパッ
タリング法により、ＳｉＯｘ膜（ｘ：１.５〜２.５）２
を２００ｎｍの厚さで製膜した。続いて片方の面だけに
同じくスパッタ法でＩＴＯ透明導電膜３を１２０ｎｍの
厚さで製膜した。In the same manner as in Example 3, a 100 μm-thick polyethersulfone film was subjected to ultrasonic cleaning in an aqueous detergent and isopropyl alcohol, and then dried at 100 ° C.
Using this film as a substrate 1, an SiOx film (x: 1.5 to 2.5) 2 is formed on both surfaces of the substrate 1 by sputtering.
Was formed into a film having a thickness of 200 nm. Subsequently, an ITO transparent conductive film 3 was formed in a thickness of 120 nm on only one surface by the same sputtering method.
【００３６】次に正孔注入層４としてＮ，Ｎ'−ｂｉｓ
（３−ｍｅｔｈｙｌｐｈｅｎｙｌ）−Ｎ，Ｎ'−ｄｉｐ
ｈｅｎｙｌ−［１，１'−ｂｉｐｈｅｎｙｌ］−４，４'
ｄｉａｍｉｎｅ（ＴＰＤ）を３０ｎｍの厚さで製膜し、
さらに有機発光材料による有機薄膜５としてｔｒｉｓ
（８−ｑｕｉｎｏｌｉｎｏｌａｔｏ）ａｌｕｍｉｎｕｍ
（Ａｌｑ３）を真空蒸着で５０ｎｍの厚さで製膜した。Next, as the hole injection layer 4, N, N'-bis
(3-methylphenyl) -N, N'-dip
henyl- [1,1'-biphenyl] -4,4 '
diamine (TPD) with a thickness of 30 nm,
Further, tris is formed as an organic thin film 5 made of an organic light emitting material.
(8-quinolinolato) aluminum
(Alq3) was formed to a thickness of 50 nm by vacuum evaporation.
【００３７】ひき続きマグネシュウムと銀をその組成比
が１０：１となるように１００ｎｍ共蒸着して発光素子
の上電極（陰極膜６）を形成した。続いてポリマー材料
層７ａとしてスリーボンド社製の光硬化性樹脂３０５２
を塗布したのち、紫外線を照射して樹脂を硬化させた。
次に、スパッタリング法によって膜厚８０ｎｍの酸化シ
リコン膜ＳｉＯｘ（ｘ：１.５〜２.５）を製膜した。続
いてスリーボンド社製の光硬化性樹脂３０５２を再度塗
布したのち、紫外線を照射して樹脂を硬化させた（ポリ
マー材料層７ｂ）。次にスパッタリング法によって膜厚
８０ｎｍの酸化シリコン膜ＳｉＯｘ（ｘ：１.５〜２.
５）を積層した（無機材料薄膜８ｂ）。Subsequently, magnesium and silver were co-deposited at a composition ratio of 10: 1 to 100 nm to form an upper electrode (cathode film 6) of the light emitting element. Subsequently, a photo-curable resin 3052 manufactured by Three Bond Co., Ltd. is used as the polymer material layer 7a.
Was applied, and the resin was cured by irradiating ultraviolet rays.
Next, a silicon oxide film SiOx (x: 1.5 to 2.5) having a thickness of 80 nm was formed by a sputtering method. Subsequently, a photocurable resin 3052 manufactured by Three Bond Co. was applied again, and the resin was cured by irradiating ultraviolet rays (polymer material layer 7b). Next, a silicon oxide film SiOx (x: 1.5 to 2.5.
5) were laminated (inorganic material thin film 8b).
【００３８】（比較例1）実施例１と同様に厚さ１００
μｍのポリカーボネイト（ＰＣ）フィルム上にＴＰＤと
Ａｌｑ３から成る発光素子を形成したのち、光硬化性樹
脂によるポリマー材料層７を塗布せず、発光素子上に直
接ＳｉＯｘ膜（ｘ：１.５〜２.５）による無機材料薄膜
８を膜厚が３０から１０００ｎｍの範囲で製膜した。(Comparative Example 1) Thickness 100 in the same manner as in Example 1.
After forming a light emitting device composed of TPD and Alq3 on a polycarbonate (PC) film having a thickness of μm, the SiOx film (x: 1.5 to 2) was directly formed on the light emitting device without applying the polymer material layer 7 made of a photocurable resin. .5) to form a thin film of inorganic material 8 having a thickness in the range of 30 to 1000 nm.
【００３９】実施例１および比較例１で示した電界発光
素子を７０℃の恒温層内で電流密度が１０ｍＡ／ｃｍ２
となる条件で駆動したときの発光強度変化を調べた。発
光素子を作成した基板の酸素透過率と発光強度が初期の
半分になるまでの時間を表１および表２にまとめる。実
施例１で示した電界発光素子の結果が表１であり、比較
例１で示した電界発光素子の結果が表２である。The current density of the electroluminescent device shown in Example 1 and Comparative Example 1 was 10 mA / cm 2 in a constant temperature layer at 70 ° C.
The change in emission intensity when driven under the following conditions was examined. Tables 1 and 2 summarize the time required for the oxygen transmittance and the luminous intensity of the substrate on which the light-emitting element is formed to become half of the initial value. Table 1 shows the results of the electroluminescent device shown in Example 1, and Table 2 shows the results of the electroluminescent device shown in Comparative Example 1.
【００４０】[0040]
【表１】 [Table 1]
【００４１】[0041]
【表２】 [Table 2]
【００４２】表１において、酸化シリコンの膜厚を１０
０ｎｍ以上にすることによって発光強度が初期の半分に
なるまでの時間を大幅に長くすることができた。しかし
ながら、酸化シリコンの膜厚が１０００ｎｍになると膜
にクラックが生じ、封止効果は認められなかった。比較
例（表２）に示した電界発光素子は全く発光せず、酸化
シリコン膜を形成する際に劣化したことがわかる。ま
た、実施例１に示した電界発光素子に較べ、酸化シリコ
ンの膜厚が薄い場合においても、膜はがれやクラックが
認められ、発光素子上に形成したポリマー材料層７（７
ａ，７ｂ）が無機材料薄膜８（８ａ，８ｂ）を割れにく
いものとしていることがわかる。In Table 1, the thickness of the silicon oxide was 10
By setting the thickness to 0 nm or more, the time required for the emission intensity to be reduced to half of the initial value could be greatly increased. However, when the thickness of the silicon oxide became 1000 nm, cracks occurred in the film, and no sealing effect was observed. It can be seen that the electroluminescent device shown in the comparative example (Table 2) did not emit light at all and deteriorated when the silicon oxide film was formed. Further, even when the thickness of the silicon oxide film is thinner than that of the electroluminescent device shown in Example 1, the film was peeled or cracked, and the polymer material layer 7 (7
a, 7b) make the inorganic material thin film 8 (8a, 8b) difficult to break.
【００４３】実施例２〜５に示した電界発光素子を７０
℃の恒温層内で電流密度が１０ｍＡ／ｃｍ２となる条件
で駆動したときの発光強度変化を調べた。発光強度が初
期の半分になるまでの時間を表３にまとめる。The electroluminescent device shown in Examples 2 to 5
The change in light emission intensity when driven under the condition that the current density was 10 mA / cm 2 in a constant temperature layer at a temperature of ° C. was examined. Table 3 summarizes the time required for the emission intensity to become half of the initial value.
【００４４】[0044]
【表３】 [Table 3]
【００４５】無機材料薄膜８（８ａ，８ｂ）として金属
窒化膜、金属膜も金属酸化膜と同様の効果がある。ま
た、実施例５に示したようにポリマー材料層７（７ａ，
７ｂ）と無機材料薄膜８（８ａ，８ｂ）とを何層にも積
層することによって、薄い膜厚の無機材料薄膜において
も封止効果を得ることができる。The metal nitride film and the metal film as the inorganic material thin film 8 (8a, 8b) have the same effect as the metal oxide film. Further, as shown in Example 5, the polymer material layer 7 (7a,
By laminating the inorganic material thin film 7b) and the inorganic material thin film 8 (8a, 8b) in any number of layers, a sealing effect can be obtained even with a thin inorganic material thin film.
【００４６】[0046]
【発明の効果】請求項１の発明によれば、対向する電極
間に有機発光材料による有機薄膜が配された構成を有す
る電界発光素子において、電極膜及び有機薄膜が積層さ
れる基板がポリマー材料を基材としたフィルムもしくは
シートであり、有機薄膜及び電極膜をポリマー材料と無
機材料薄膜から成る積層体によって被覆することによ
り、薄くて軽いといったポリマー材料を基材としたフィ
ルムもしくはシートの特性を損なうことなく、発光素子
を高寿命化することができる。According to the first aspect of the present invention, in an electroluminescent device having a structure in which an organic thin film made of an organic light emitting material is disposed between opposing electrodes, a substrate on which the electrode film and the organic thin film are laminated is made of a polymer material. A film or sheet based on a polymer material.The organic thin film and the electrode film are coated with a laminate composed of a polymer material and an inorganic material thin film, so that the characteristics of the film or sheet based on the polymer material such as thin and light can be improved. The life of the light emitting element can be extended without any loss.
【００４７】請求項２の発明によれば、請求項１の発明
による電界発光素子において、素子を被覆する無機材料
薄膜の膜厚を１００〜５００ｎｍとすることによって薄
い、軽いといったポリマー材料を基材としたフィルムも
しくはシートの特性を損なうことなく、発光素子を高寿
命化することができる。According to the second aspect of the present invention, in the electroluminescent device according to the first aspect of the present invention, a thin or light polymer material is formed by setting the thickness of the inorganic material thin film covering the device to 100 to 500 nm. It is possible to extend the life of the light emitting element without impairing the characteristics of the film or sheet.
【００４８】請求項３の発明によれば、請求項１または
２の発明による発光素子において、ポリマー材料層と無
機材料薄膜から成る積層膜を複数のポリマー材料層及び
複数の無機材料薄膜層から形成することによって、より
薄い膜厚の無機材料薄膜を使用して発光素子を高寿命化
することができる。According to a third aspect of the present invention, in the light emitting device according to the first or second aspect, a laminated film comprising a polymer material layer and an inorganic material thin film is formed from a plurality of polymer material layers and a plurality of inorganic material thin film layers. Accordingly, the life of the light-emitting element can be prolonged by using a thinner inorganic material thin film.
【００４９】請求項４の発明によれば、請求項１ないし
３のいずれか１の発明による電界発光素子において、無
機材料薄膜をスパッタリング法によって製膜することに
より、発光素子を高寿命化することができる。According to a fourth aspect of the present invention, in the electroluminescent device according to any one of the first to third aspects of the present invention, the life of the light emitting element is extended by forming the inorganic material thin film by a sputtering method. Can be.
【００５０】請求項５の発明によれば、請求項１ないし
４のいずれか１の発明による電界発光素子において、無
機材料薄膜を金属酸化膜とすることよって発光素子を高
寿命化することができる。According to the fifth aspect of the present invention, in the electroluminescent device according to any one of the first to fourth aspects of the present invention, the life of the light emitting device can be extended by using a metal oxide film as the inorganic material thin film. .
【００５１】請求項６の発明によれば、請求項１ないし
４のいずれか１の発明による電界発光素子において、無
機材料薄膜を金属窒化膜とすることよって発光素子を高
寿命化することができる。According to the invention of claim 6, in the electroluminescent device according to any one of claims 1 to 4, the life of the light emitting device can be extended by using a metal nitride film as the inorganic material thin film. .
【００５２】請求項７の発明によれば、請求項１ないし
４のいずれか１の発明による電界発光素子において、無
機材料薄膜を金属膜とすることよって発光素子を高寿命
化することができる。According to the invention of claim 7, in the electroluminescent device according to any one of claims 1 to 4, the life of the light emitting device can be extended by using a metal film as the inorganic material thin film.
【図１】 本発明の電界発光素子の第１ないし第４の実
施例における積層構造を説明するための概略構成図であ
る。FIG. 1 is a schematic configuration diagram for explaining a laminated structure in first to fourth embodiments of an electroluminescent device of the present invention.
【図２】 本発明の電界発光素子の第５の実施例におけ
る積層構造を説明するための概略構成図である。FIG. 2 is a schematic configuration diagram for explaining a laminated structure in a fifth embodiment of the electroluminescent device of the present invention.
１…ポリマーフィルムによる基板、２…ＳｉＯｘ膜、３
…ＩＴＯ透明電極膜、４…正孔注入層、５…有機発光材
料による有機薄膜、６…陰極膜、７…ポリマー材料層、
７ａ…第１のポリマー材料層、７ｂ…第２のポリマー材
料層、８…無機材料薄膜、８ａ…第１の無機材料薄膜、
８ｂ…第２の無機材料薄膜。1 ... substrate made of polymer film, 2 ... SiOx film, 3
... an ITO transparent electrode film, 4 ... a hole injection layer, 5 ... an organic thin film made of an organic light emitting material, 6 ... a cathode film, 7 ... a polymer material layer,
7a: first polymer material layer, 7b: second polymer material layer, 8: inorganic material thin film, 8a: first inorganic material thin film,
8b: Second inorganic material thin film.
Claims (7)
料による有機薄膜とにより、対向する該電極膜間に前記
有機薄膜が配された構成を有する電界発光素子におい
て、前記基板は、ポリマー材料を基材としたフィルムも
しくはシートであり、かつ前記電極膜及び前記有機薄膜
は、ポリマー材料層と無機材料薄膜からなる積層膜によ
って被覆されていることを特徴とする電界発光素子。1. An electroluminescent device having a structure in which an organic thin film made of an organic light emitting material and an electrode film laminated on a substrate have the organic thin film disposed between the electrode films facing each other. An electroluminescent device, which is a film or sheet made of a material as a base material, wherein the electrode film and the organic thin film are covered with a laminated film composed of a polymer material layer and an inorganic material thin film.
て、前記電極膜及び前記有機薄膜を被覆する無機材料薄
膜の膜厚は、１００〜５００ｎｍの範囲にあることを特
徴とする電界発光素子。2. The electroluminescent device according to claim 1, wherein the thickness of the inorganic material thin film covering the electrode film and the organic thin film is in a range of 100 to 500 nm.
において、前記電極膜及び前記有機薄膜を被覆する前記
積層膜は、複数の前記ポリマー材料層及び複数の前記無
機材料薄膜からなることを特徴とする電界発光素子。3. The electroluminescent device according to claim 1, wherein the laminated film covering the electrode film and the organic thin film includes a plurality of the polymer material layers and a plurality of the inorganic material thin films. An electroluminescent element characterized by the following.
電界発光素子において、前記無機材料薄膜は、スパッタ
リング法によって製膜された膜であることを特徴とする
電界発光素子。4. The electroluminescent device according to claim 1, wherein the inorganic material thin film is a film formed by a sputtering method.
電界発光素子において、前記無機材料薄膜は、金属酸化
膜であることを特徴とする電界発光素子。5. The electroluminescent device according to claim 1, wherein the inorganic material thin film is a metal oxide film.
電界発光素子において、前記無機材料薄膜は、金属窒化
膜であることを特徴とする電界発光素子。6. The electroluminescent device according to claim 1, wherein the inorganic material thin film is a metal nitride film.
電界発光素子において、前記無機材料薄膜は、金属膜で
あることを特徴とする電界発光素子。7. The electroluminescent device according to claim 1, wherein the inorganic material thin film is a metal film.
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|---|---|---|---|
| JP2001047322A JP2002252080A (en) | 2001-02-22 | 2001-02-22 | Electric field light-emitting element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001047322A JP2002252080A (en) | 2001-02-22 | 2001-02-22 | Electric field light-emitting element |
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|---|---|
| JP2002252080A true JP2002252080A (en) | 2002-09-06 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004028215A1 (en) * | 2002-09-20 | 2004-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
| JP2004103442A (en) * | 2002-09-11 | 2004-04-02 | Ulvac Japan Ltd | Organic electroluminescent element and method for manufacturing the same |
| WO2005002286A1 (en) * | 2003-06-25 | 2005-01-06 | Tokai Rubber Industries, Ltd. | Organic electroluminescence element, process for fabricating the same and electrode film |
| JP2008218423A (en) * | 2003-03-27 | 2008-09-18 | Seiko Epson Corp | Electro-optical device, and electronic apparatus |
| JP2013077585A (en) * | 2013-02-01 | 2013-04-25 | Konica Minolta Holdings Inc | Organic electroluminescent element and luminaire |
| KR20150036525A (en) | 2012-09-04 | 2015-04-07 | 샤프 가부시키가이샤 | Organic electroluminescent display, and production method therefor |
-
2001
- 2001-02-22 JP JP2001047322A patent/JP2002252080A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004103442A (en) * | 2002-09-11 | 2004-04-02 | Ulvac Japan Ltd | Organic electroluminescent element and method for manufacturing the same |
| WO2004028215A1 (en) * | 2002-09-20 | 2004-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and manufacturing method thereof |
| JP2008218423A (en) * | 2003-03-27 | 2008-09-18 | Seiko Epson Corp | Electro-optical device, and electronic apparatus |
| WO2005002286A1 (en) * | 2003-06-25 | 2005-01-06 | Tokai Rubber Industries, Ltd. | Organic electroluminescence element, process for fabricating the same and electrode film |
| JP2005038816A (en) * | 2003-06-25 | 2005-02-10 | Morio Taniguchi | Organic electroluminescent element, its manufacturing method, and electrode film |
| US7967654B2 (en) | 2003-06-25 | 2011-06-28 | Yoshio Taniguchi | Organic electroluminescence element, process for preparation of the same, and electrode film |
| KR20150036525A (en) | 2012-09-04 | 2015-04-07 | 샤프 가부시키가이샤 | Organic electroluminescent display, and production method therefor |
| US9530984B2 (en) | 2012-09-04 | 2016-12-27 | Sharp Kabushiki Kaisha | Organic electroluminescence display and method of manufacturing the same |
| JP2013077585A (en) * | 2013-02-01 | 2013-04-25 | Konica Minolta Holdings Inc | Organic electroluminescent element and luminaire |
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