JP2002246715A - Substrate, its producing method and connecting structure - Google Patents
Substrate, its producing method and connecting structureInfo
- Publication number
- JP2002246715A JP2002246715A JP2001038167A JP2001038167A JP2002246715A JP 2002246715 A JP2002246715 A JP 2002246715A JP 2001038167 A JP2001038167 A JP 2001038167A JP 2001038167 A JP2001038167 A JP 2001038167A JP 2002246715 A JP2002246715 A JP 2002246715A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- conductor
- conductor film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Combinations Of Printed Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、基板の外側面に設
けられた端面電極を無鉛半田によって別の基板の電極に
接合する際に有用な基板,基板の製造方法及び基板の接
続構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate useful for bonding an end face electrode provided on an outer surface of a substrate to an electrode of another substrate by lead-free solder, a method of manufacturing the substrate, and a connection structure of the substrate.
【0002】[0002]
【従来の技術】図1(A)〜(F)は端面電極を有する
基板の従来の製造方法を示す。2. Description of the Related Art FIGS. 1A to 1F show a conventional method for manufacturing a substrate having an end face electrode.
【0003】端面電極を有する基板を製造するときに
は、まず、基板1を用意し、そして、図1(A)に示す
ように基板1にスルーホール1aを必要数形成する。When manufacturing a substrate having an end face electrode, first, a substrate 1 is prepared, and a required number of through holes 1a are formed in the substrate 1 as shown in FIG.
【0004】次に、図1(B)に示すようにスルーホー
ル1aの表面側開口周囲部分から内壁部分にかけてスク
リーン印刷法によって導体ペーストを印刷して上部導体
膜2を形成し、この上部導体膜2を乾燥し焼成する。[0004] Next, as shown in FIG. 1 (B), a conductor paste is printed by a screen printing method from the periphery of the opening on the surface side of the through hole 1 a to the inner wall portion to form an upper conductor film 2. 2 is dried and fired.
【0005】次に、図1(C)に示すようにスルーホー
ル1aの裏面側開口周囲部分から内壁部分にかけてスク
リーン印刷法によって上部導体膜2と同じ導体ペースト
を印刷して上部導体膜2と導通する下部導体膜3を形成
し、この下部導体膜3を乾燥し焼成する。Next, as shown in FIG. 1 (C), the same conductive paste as that of the upper conductive film 2 is printed from the peripheral portion of the opening on the back side of the through hole 1a to the inner wall portion by screen printing to conduct with the upper conductive film 2. The lower conductive film 3 to be formed is formed, and the lower conductive film 3 is dried and fired.
【0006】次に、図1(D)に示すように下部導体膜
3の中心孔の裏面側開口周囲部分から内壁部分にかけて
スクリーン印刷法によって上部導体膜2と同じ導体ペー
ストを印刷して下部導体膜3と導通する補強導体膜4を
形成し、この補強導体膜4を乾燥し焼成する。Next, as shown in FIG. 1D, the same conductor paste as that of the upper conductor film 2 is printed by a screen printing method from the periphery of the opening on the back surface side of the center hole of the lower conductor film 3 to the inner wall portion. A reinforcing conductor film 4 that is electrically connected to the film 3 is formed, and the reinforcing conductor film 4 is dried and fired.
【0007】次に、図1(E)に示すように基板1,上
部導体膜2,下部導体膜3及び補強導体膜4を分割ライ
ンDLを境界として分割する。分割後の基板1’の外側
面には、図1(F)に示すように分割された上部導体膜
2’,下部導体膜3’及び補強導体膜4’から成る端面
電極5が形成される。Next, as shown in FIG. 1E, the substrate 1, the upper conductor film 2, the lower conductor film 3, and the reinforcing conductor film 4 are divided with the division line DL as a boundary. On the outer surface of the divided substrate 1 ', an end surface electrode 5 composed of the divided upper conductor film 2', lower conductor film 3 'and reinforcing conductor film 4' is formed as shown in FIG. 1 (F). .
【0008】[0008]
【発明が解決しようとする課題】分割後の基板1’は、
図2(A)に示すように所望の電子部品(図示省略)が
実装された後にマザーボード等の別の基板6に実装され
る。基板6には基板1’の端面電極5の裏面部分に対応
する電極7が設けられていて、基板1’の端面電極5は
半田8によって基板6の電極7に接合される。前記半田
8としてSn−Pb合金等の鉛含有の共晶半田を用いる
場合には、半田付け上で特段問題を生じることはない。The substrate 1 'after the division is
After a desired electronic component (not shown) is mounted as shown in FIG. 2A, it is mounted on another substrate 6 such as a motherboard. The substrate 6 is provided with an electrode 7 corresponding to the back surface of the end surface electrode 5 of the substrate 1 ′, and the end surface electrode 5 of the substrate 1 ′ is joined to the electrode 7 of the substrate 6 by solder 8. When a eutectic solder containing lead such as a Sn-Pb alloy is used as the solder 8, no particular problem occurs in soldering.
【0009】しかし、図2(B)に示すように、半田9
として最近着目されている無鉛半田(Pbフリー半田)
を用いる場合には、端面電極5がAg−Pd導体材料か
ら成る場合にはAg−Pdの殆ど全てが半田喰われ現象
によって半田9中に拡散し、また、端面電極5がAg−
Pt導体材料から成る場合には半田付け時温度によって
程度は異なるもののAg−Ptが半田喰われ現象によっ
て半田9中に拡散して、端面電極5が消失または消失に
近い状態となる。この結果、端面電極5中で膜厚が最も
薄くなる基板表面側のエッジ部分にエッジ切れが発生し
て、導通不良等の問題を生じて信頼性が大きく低下して
しまう。[0009] However, as shown in FIG.
Lead-free solder (Pb-free solder) recently attracting attention
When the end face electrode 5 is made of an Ag-Pd conductor material, almost all of the Ag-Pd diffuses into the solder 9 due to the solder erosion phenomenon.
When made of a Pt conductor material, Ag-Pt diffuses into the solder 9 due to the solder erosion phenomenon, though the degree varies depending on the temperature at the time of soldering, and the end face electrode 5 disappears or is in a state close to disappearance. As a result, the edge portion on the substrate surface side where the film thickness becomes the thinnest in the end face electrode 5 occurs, causing problems such as poor conduction and the reliability is greatly reduced.
【0010】本発明は前記事情に鑑みて創作されたもの
で、その目的とするところは、基板の外側面に設けられ
た端面電極を無鉛半田によって別の基板の電極に接合す
る場合でも導通不良等の問題を生じることがない基板,
基板の製造方法及び基板の接続構造を提供することにあ
る。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method for connecting a terminal electrode provided on an outer surface of a substrate to an electrode of another substrate by using lead-free solder. Substrates that do not cause problems such as
An object of the present invention is to provide a method of manufacturing a substrate and a connection structure of the substrate.
【0011】[0011]
【課題を解決するための手段】前記目的を達成するた
め、請求項1に記載の基板は、基板表面から基板裏面に
至る少なくとも1つの端面電極を外側面に有する基板に
おいて、前記端面電極は、基板表面から基板裏面に至る
ように設けられたAg系導体材料から成る第1導体膜
と、第1導体膜の少なくとも基板表面側のエッジ部分の
外面に設けられた卑金属系導体材料から成る第2導体膜
とから構成されている、ことをその特徴とする。According to a first aspect of the present invention, there is provided a substrate having at least one end surface electrode extending from a front surface of the substrate to a back surface of the substrate, wherein the end surface electrode comprises: A first conductive film made of an Ag-based conductive material provided from the substrate front surface to the substrate back surface, and a second conductive film made of a base metal-based conductive material provided on at least an outer surface of an edge portion of the first conductive film on the substrate surface side; And a conductive film.
【0012】また、請求項4に記載の基板の製造方法
は、基板表面から基板裏面に至る少なくとも1つの端面
電極を外側面に有する基板の製造方法において、基板に
少なくとも1つのスルーホールを形成する工程と、基板
表面からスルーホールを通じて基板裏面に至るようにA
g系導体材料から成る第1導体膜を形成する工程と、第
1導体膜の少なくとも基板表面側のエッジ部分の外面に
卑金属系導体材料から成る第2導体膜を形成する工程
と、基板,第1導体膜及び第2導体膜をスルーホールを
境に分割する工程とを備える、ことを特徴とする。According to a fourth aspect of the present invention, in the method of manufacturing a substrate having at least one end surface electrode from the front surface to the rear surface of the substrate on the outer surface, at least one through hole is formed in the substrate. Process and A
forming a first conductive film made of a g-based conductive material, forming a second conductive film made of a base metal-based conductive material on at least an outer surface of an edge portion of the first conductive film on the substrate surface side, Dividing the first conductor film and the second conductor film with a through hole as a boundary.
【0013】さらに、請求項6に記載の基板の接続構造
は、基板表面から基板裏面に至るように設けられたAg
系導体材料から成る第1導体膜と、第1導体膜の少なく
とも基板表面側のエッジ部分の外面に設けられた卑金属
系導体材料から成る第2導体膜とから構成された少なく
とも1つの端面電極を外側面に有する第1基板と、前記
第1基板の端面電極の基板裏面部分に対応する電極を有
する第2基板とを備え、前記第1基板の端面電極は無鉛
半田によって第2基板の電極に接合されている、ことを
その特徴とする。Further, in the substrate connection structure according to the present invention, the Ag is provided so as to extend from the front surface of the substrate to the back surface of the substrate.
At least one end face electrode composed of a first conductor film made of a base conductor material and a second conductor film made of a base metal-based conductor material provided on at least an outer surface of an edge portion on the substrate surface side of the first conductor film. A first substrate provided on an outer side surface; and a second substrate having an electrode corresponding to a back surface portion of the end surface electrode of the first substrate. The end surface electrode of the first substrate is connected to an electrode of the second substrate by lead-free solder. It is characterized by being joined.
【0014】請求項1に記載の基板及び請求項6に記載
の基板の接続構造によれば、端面電極を構成する第1導
体膜の少なくとも基板表面側のエッジ部分の外面に、卑
金属系導体材料から成る第2導体膜が設けられているの
で、基板の端面電極を無鉛半田によって別の基板の電極
に半田付けする場合でも、第2導体膜が無鉛半田に対し
て拡散し難い卑金属系導体材料から成ることから、端面
電極の第2導体膜で覆われている部分はそのエッジ膜厚
が薄くても第2導体膜と共に残存し、これにより端面電
極の基板表面側のエッジ部分にエッジ切れを生じること
が防止される。また、請求項4に記載の基板の製造方法
によれば、請求項1に記載の基板を的確に且つ安定に製
造することができる。According to the connection structure of the substrate according to the first aspect and the substrate according to the sixth aspect, the base metal-based conductive material is formed on at least the outer surface of the edge portion of the first conductive film constituting the end face electrode on the substrate surface side. Is provided, the base metal-based conductive material is difficult for the second conductive film to diffuse into the lead-free solder even when the end surface electrode of the substrate is soldered to the electrode of another substrate by lead-free solder. Therefore, the portion of the end face electrode covered with the second conductor film remains with the second conductor film even if the edge film thickness is small, thereby cutting off the edge at the edge portion of the end face electrode on the substrate surface side. Is prevented from occurring. Further, according to the method for manufacturing a substrate according to the fourth aspect, the substrate according to the first aspect can be manufactured accurately and stably.
【0015】本発明の前記目的とそれ以外の目的と、構
成特徴と、作用効果は、以下の説明と添付図面によって
明らかとなる。The above and other objects, constitutional features, and operational effects of the present invention will become apparent from the following description and the accompanying drawings.
【0016】[0016]
【発明の実施の形態】図3(A)〜(G)は端面電極を
有する基板の本発明適用の製造方法を示す。3 (A) to 3 (G) show a method of manufacturing a substrate having end electrodes according to the present invention.
【0017】端面電極を有する基板を製造するときに
は、まず、厚さ0.635mmで96%アルミナの基板
11を用意し、図3(A)に示すように基板11に口径
0.3mmのスルーホール11aを必要数形成する。基
板11へのスルーホール11aの形成には、レーザー光
照射やパンチング等の穿孔手法が選択的に使用できる。When manufacturing a substrate having an end surface electrode, first, a substrate 11 of 0.635 mm in thickness and 96% alumina is prepared, and a through hole having a diameter of 0.3 mm is formed in the substrate 11 as shown in FIG. The required number 11a is formed. For forming the through hole 11a in the substrate 11, a perforation technique such as laser beam irradiation or punching can be selectively used.
【0018】次に、図3(B)に示すようにスルーホー
ル11aの表面側開口周囲部分から内壁部分にかけてA
g−Pt導体ペーストを塗布して上部導体膜12を形成
し、この上部導体膜12を乾燥し焼成する。Next, as shown in FIG. 3 (B), from the periphery of the opening on the surface side of the through hole 11a to the inner wall portion, A
The upper conductor film 12 is formed by applying a g-Pt conductor paste, and the upper conductor film 12 is dried and fired.
【0019】具体的には、基板11の表面側に325メ
ッシュ・バイヤス張り・乳剤厚10μmのステンレスス
クリーンを配置し、スルーホール11aを通じてエア吸
引を行いながら、Ag−Pt導体ペーストをスルーホー
ル11aの表面側開口周囲部分に印刷する。ちなみに、
Ag−Pt導体ペーストは850℃焼成タイプのもの
で、Ag−Pt成分の金属粉末,低融点ガラスフリッ
ト,有機バインダー,有機溶剤を均質に混合して調製さ
れている。印刷されたAg−Pt導体ペーストの一部は
エア吸引によってスルーホール11a内に引き込まれて
スルーホール11aの内壁に塗布される。塗布後のAg
−Pt導体ペーストは、150℃,20minの条件で
乾燥され、850℃ピーク,in−out50minの
条件で焼成される。ちなみに、焼成後の上部導体膜12
の厚みは10μm前後である。More specifically, a 325-mesh stainless steel screen with a bias of 10 μm is arranged on the front side of the substrate 11, and the Ag-Pt conductor paste is applied to the through-hole 11a while sucking air through the through-hole 11a. Print around the opening on the front side. By the way,
The Ag-Pt conductor paste is a 850 ° C. firing type, and is prepared by homogeneously mixing a metal powder of an Ag-Pt component, a low-melting glass frit, an organic binder, and an organic solvent. A part of the printed Ag-Pt conductor paste is drawn into the through hole 11a by air suction and applied to the inner wall of the through hole 11a. Ag after application
The -Pt conductor paste is dried at 150 ° C for 20 minutes and fired at 850 ° C peak and in-out for 50 minutes. By the way, the upper conductive film 12 after firing
Has a thickness of about 10 μm.
【0020】次に、図3(C)に示すようにスルーホー
ル11aの裏面側開口周囲部分から内壁部分にかけて上
部導体膜12と同じAg−Pt導体ペーストを塗布して
上部導体膜12と導通する下部導体膜13を形成し、こ
の下部導体膜13を乾燥し焼成する。Next, as shown in FIG. 3 (C), the same Ag-Pt conductor paste as that of the upper conductor film 12 is applied from the periphery of the opening on the back surface side of the through hole 11a to the inner wall portion to conduct with the upper conductor film 12. The lower conductor film 13 is formed, and the lower conductor film 13 is dried and fired.
【0021】具体的には、上部導体膜12の形成時と同
様に、反転させた後の基板11の裏面側に325メッシ
ュ・バイヤス張り・乳剤厚10μmのステンレススクリ
ーンを配置し、上部導体膜12の中心孔及びスルーホー
ル11aを通じてエア吸引を行いながら、Ag−Pt導
体ペーストをスルーホール11aの裏面側開口周囲部分
に印刷する。印刷されたAg−Pt導体ペーストの一部
はエア吸引によってスルーホール11a内に引き込まれ
てスルーホール11aの内壁に塗布されると共に上部導
体膜12の内壁部分と導通する。塗布後のAg−Pt導
体ペーストは、150℃,20minの条件で乾燥さ
れ、850℃ピーク,in−out50minの条件で
焼成される。ちなみに、焼成後の下部導体膜12の厚み
は10μm前後である。More specifically, as in the case of forming the upper conductive film 12, a 325-mesh, bias-coated, 10 μm-emulsion-thick stainless steel screen is arranged on the back surface of the substrate 11 after being inverted. The Ag-Pt conductor paste is printed around the opening on the back surface side of the through hole 11a while performing air suction through the center hole and the through hole 11a. A part of the printed Ag-Pt conductive paste is drawn into the through-hole 11a by air suction, applied to the inner wall of the through-hole 11a, and is electrically connected to the inner wall of the upper conductive film 12. The Ag-Pt conductor paste after application is dried at 150 ° C. for 20 minutes and baked at 850 ° C. peak and in-out 50 minutes. Incidentally, the thickness of the lower conductor film 12 after firing is about 10 μm.
【0022】次に、図3(D)に示すように下部導体膜
13の中心孔の裏面側開口周囲部分から内壁部分にかけ
て上部導体膜12と同じAg−Pt導体ペーストを塗布
して下部導体膜13と導通する補強導体膜14を形成
し、この補強導体膜4を乾燥し焼成する。Next, as shown in FIG. 3D, the same Ag-Pt conductor paste as that of the upper conductor film 12 is applied from the periphery of the opening on the back surface side of the center hole of the lower conductor film 13 to the inner wall portion. A reinforcing conductive film which is electrically connected to the conductive film is formed, and the reinforcing conductive film is dried and fired.
【0023】具体的には、上記導体膜12の形成時と同
様に、反転させた後の基板11の裏面側に325メッシ
ュ・バイヤス張り・乳剤厚10μmのステンレススクリ
ーンを配置し、下部導体膜13及び上部導体膜12の中
心孔を通じてエア吸引を行いながら、Ag−Pt導体ペ
ーストを下部導体膜13の裏面側開口周囲部分に印刷す
る。印刷されたAg−Pt導体ペーストの一部はエア吸
引によって下部導体膜13の中心孔内に引き込まれて下
部導体膜13の中心孔の内壁部分に塗布される。塗布後
のAg−Pt導体ペーストは、150℃,20minの
条件で乾燥され、850℃ピーク,in−out50m
inの条件で焼成される。ちなみに、焼成後の補強導体
膜14の厚みは10μm前後である。More specifically, similarly to the formation of the conductive film 12, a 325-mesh, bias-coated, 10-μm-emulsion-thick stainless steel screen is disposed on the back side of the substrate 11 after being inverted, and the lower conductive film 13 is formed. The Ag-Pt conductive paste is printed on the lower conductive film 13 around the opening on the rear surface side while performing air suction through the center hole of the upper conductive film 12. A part of the printed Ag-Pt conductor paste is drawn into the center hole of the lower conductor film 13 by air suction and applied to the inner wall portion of the center hole of the lower conductor film 13. The Ag-Pt conductor paste after application is dried under the conditions of 150 ° C. for 20 minutes, and has a peak of 850 ° C. and an in-out of 50 m.
It is fired under the condition of “in”. Incidentally, the thickness of the reinforcing conductor film 14 after firing is about 10 μm.
【0024】次に、図3(E)に示すように上部導体膜
12の中心孔の表面側開口周囲部分から内壁部分にかけ
てCu導体ペーストを塗布して上部導体膜12及び補強
導体膜14と導通する保護導体膜15を形成し、この保
護導体膜15を乾燥し焼成する。Next, as shown in FIG. 3 (E), a Cu conductor paste is applied from the peripheral portion of the opening on the surface side of the center hole of the upper conductor film 12 to the inner wall portion to conduct with the upper conductor film 12 and the reinforcing conductor film 14. A protective conductor film 15 is formed, and the protective conductor film 15 is dried and fired.
【0025】具体的には、上記導体膜12の形成時と同
様に、基板11の表面側に325メッシュ・バイヤス張
り・乳剤厚10μmのステンレススクリーンを配置し、
上部導体膜12,下部導体膜13及び補強導体膜14の
中心孔を通じてア吸引を行いながら、Cu導体ペースト
を上部導体膜12の表面側開口周囲部分に印刷する。ち
なみに、Cu導体ペーストは600℃低温焼成タイプの
もので、Cu成分の金属粉末,低融点ガラスフリット,
有機バインダー,有機溶剤を均質に混合して調製されて
いる。印刷されたCu導体ペーストの一部はエア吸引に
よって上部導体膜12の中心孔内に引き込まれて上部導
体膜12の内壁部分に塗布されると共に下部導体膜13
及び補強導体膜14の内壁部分と導通する。塗布後のC
u導体ペーストは、120℃,20minの条件で乾燥
され、600℃ピーク,in−out30minの条件
で焼成される。保護導体膜15を形成するために用いた
Cu導体ペーストが低温焼成タイプのもので焼成時の収
縮率が小さいことから、保護導体膜15の基板表面側の
エッジ部分には十分な膜厚を確保できる。ちなみに、焼
成後の保護導体膜15の厚みは10μm前後である。More specifically, as in the case of the formation of the conductive film 12, a stainless screen having a size of 325 mesh, a bias, and an emulsion thickness of 10 μm is arranged on the surface of the substrate 11.
The Cu conductor paste is printed around the opening on the surface side of the upper conductor film 12 while performing suction through the central holes of the upper conductor film 12, the lower conductor film 13, and the reinforcing conductor film 14. Incidentally, the Cu conductor paste is a low-temperature firing type at 600 ° C., and includes a metal powder of a Cu component, a low melting glass frit,
It is prepared by homogeneously mixing an organic binder and an organic solvent. A part of the printed Cu conductor paste is drawn into the center hole of the upper conductor film 12 by air suction and applied to the inner wall portion of the upper conductor film 12 and the lower conductor film 13
And conductive with the inner wall portion of the reinforcing conductor film 14. C after application
The u conductor paste is dried at 120 ° C. for 20 minutes, and fired at 600 ° C. peak and in-out for 30 minutes. Since the Cu conductor paste used to form the protective conductor film 15 is of a low-temperature sintering type and has a small shrinkage ratio during sintering, a sufficient film thickness is secured at the edge portion of the protective conductor film 15 on the substrate surface side. it can. Incidentally, the thickness of the protective conductor film 15 after firing is about 10 μm.
【0026】次に、図3(F)に示すように基板11,
上部導体膜12,下部導体膜13,補強導体膜14及び
保護導体膜15を分割ラインDLを境界として分割す
る。Next, as shown in FIG.
The upper conductive film 12, the lower conductive film 13, the reinforcing conductive film 14, and the protective conductive film 15 are divided on the dividing line DL as a boundary.
【0027】具体的には、スルーホール形成位置の中心
を通るように予め基板11に形成されている分割用溝に
沿って基板12を折って分断するか、或いは、回転ブレ
ードや照射レーザによって基板12を分割ラインDLに
沿ってカッティングすることによって前記の分割が実施
される。More specifically, the substrate 12 is folded and divided along a dividing groove formed on the substrate 11 in advance so as to pass through the center of the through hole forming position, or the substrate 12 is rotated by a rotating blade or an irradiation laser. The above-described division is performed by cutting 12 along the division line DL.
【0028】分割後の基板11’の外側面には、図3
(G)に示すように分割された上部導体膜12’,下部
導体膜13’,補強導体膜14’及び保護導体膜15’
から成る端面電極16が形成される。図から分かるよう
に、この端面電極16の上部導体膜12’の基板表面側
のエッジ部分の外面は保護導体膜15’によって覆われ
ている。The outer surface of the substrate 11 'after division is shown in FIG.
The upper conductor film 12 ', the lower conductor film 13', the reinforcing conductor film 14 'and the protection conductor film 15' divided as shown in FIG.
Is formed. As can be seen from the figure, the outer surface of the edge portion on the substrate surface side of the upper conductor film 12 'of the end face electrode 16 is covered with the protective conductor film 15'.
【0029】ちなみに、特許請求の範囲における「第1
導体膜」は分割前の上部導体膜12,下部導体膜13及
び補強導体膜14によって構成された導体膜部分、また
は、分割後の上部導体膜12’,下部導体膜13’及び
補強導体膜14’によって構成された導体膜部分を指
す。また、特許請求の範囲における「第2導体膜」は分
割前の補強導体膜14または分割後の補強導体膜14’
を指す。By the way, in the claims, "first
The “conductive film” is a conductive film portion composed of the upper conductive film 12, the lower conductive film 13, and the reinforcing conductive film 14 before the division, or the upper conductive film 12 ′, the lower conductive film 13 ′, and the reinforcing conductive film 14 after the division. 'Indicates the conductor film portion constituted by. In the claims, the “second conductor film” refers to the reinforcing conductor film 14 before division or the reinforcing conductor film 14 ′ after division.
Point to.
【0030】分割後の基板11’には混成集積回路等を
構成するために所望の電子部品(図示省略)が実装さ
れ、基板11’の外側面に設けられた端面電極16はこ
の混成集積回路の外部端子として用いられる。電子部品
実装後の基板11’は図4(A)に示すようにマザーボ
ード等の別の基板17に実装される。基板17には基板
11’の端面電極16の裏面部分に対応する電極18が
設けられていて、基板11’の端面電極16は半田19
によって基板17の電極18に接合される。前記半田1
9としてSn−Pb合金等の鉛含有の共晶半田を用いる
場合には、従来と同様、半田付け上で特段問題を生じる
ことはない。Desired electronic components (not shown) for forming a hybrid integrated circuit and the like are mounted on the divided substrate 11 ', and the end face electrodes 16 provided on the outer surface of the substrate 11' are connected to the hybrid integrated circuit. Used as external terminals. The board 11 'after mounting the electronic components is mounted on another board 17 such as a motherboard as shown in FIG. The substrate 17 is provided with an electrode 18 corresponding to the back surface of the end surface electrode 16 of the substrate 11 ′, and the end surface electrode 16 of the substrate 11 ′
To the electrode 18 of the substrate 17. The solder 1
When a lead-containing eutectic solder such as an Sn-Pb alloy is used as No. 9, no particular problem occurs in soldering as in the related art.
【0031】一方、図4(B)に示すように、半田20
として無鉛半田(Pbフリー半田)、例えば、Snを主
成分としこれにAg,Cu,Sb,Bi,In,Zn等
を1種もしくは複数種添加して構成された無鉛半田を用
いる場合には、半田付け時の温度によって程度は異なる
ものの、端面電極16の保護導体膜15’で覆われてい
ない部分のうち半田20が付着する部分におけるAg−
Ptが半田喰われ現象によって半田20中に拡散して同
部分が消失または消失に近い状態となるが、端面電極1
6の基板表面側のエッジ部分を覆う保護導体膜15’が
無鉛半田20中に拡散し難いCu導体材料から成ること
から、端面電極16の保護導体膜15’で覆われている
部分はそのエッジ膜厚が薄くても保護導体膜15’と共
に残存し、これにより端面電極16の基板表面側のエッ
ジ部分にエッジ切れを生じることが防止される。On the other hand, as shown in FIG.
When using a lead-free solder (Pb-free solder), for example, a lead-free solder composed of Sn as a main component and one or more of Ag, Cu, Sb, Bi, In, Zn, etc. added thereto Although the degree differs depending on the temperature at the time of soldering, the Ag− in the portion of the end face electrode 16 not covered with the protective conductor film 15 ′ to which the solder 20 adheres is used.
The Pt diffuses into the solder 20 due to the solder erosion phenomenon, and the portion disappears or is almost disappeared.
6 is made of a Cu conductor material that hardly diffuses into the lead-free solder 20, the portion of the end face electrode 16 that is covered with the protective conductor film 15 ′ has the edge. Even if the film thickness is small, it remains together with the protective conductor film 15 ', thereby preventing the edge electrode 16 from being cut off at the edge portion on the substrate surface side.
【0032】また、Cu導体材料から成る保護導体膜1
5’はAg系導体膜に比べて半田濡れがあまり良くない
ことから、基板11’の表面側まで無鉛半田20が濡れ
上がることがないので、端面電極16の表面部分に保護
導体膜15’で覆われていない部分が存在しても同部分
は無鉛半田20による悪影響を受けることはない。The protective conductor film 1 made of a Cu conductor material
5 ′ is not so good in solder wetting as compared with the Ag-based conductor film, so that the lead-free solder 20 does not wet up to the surface side of the substrate 11 ′. Even if there is an uncovered portion, the portion is not adversely affected by the lead-free solder 20.
【0033】依って、基板11’の外側面に設けられた
端面電極16を無鉛半田20によって別の基板17の電
極18に半田付けする場合でも、導通不良等の問題を確
実に回避して信頼性を大きく向上することができる。Therefore, even when the end surface electrode 16 provided on the outer surface of the substrate 11 ′ is soldered to the electrode 18 of another substrate 17 by the lead-free solder 20, problems such as poor conduction are reliably avoided and reliability is ensured. Properties can be greatly improved.
【0034】ちなみに、基板17の電極18に、1重量
%Snと2重量%Agと0.5重量%Cuの成分を有す
るPbフリークレーム半田を厚さ0.15mmのメタル
マスクで印刷し、前記の方法によって製造された端面電
極16と、図1に示した従来方法によって製造されたA
g−Pd導体材料から成る端面電極と、図1に示した従
来方法によって製造されたAg−Pt導体材料から成る
端面電極のそれぞれを電極18上に搭載した後に、25
0℃ピークでリフローを3回行ってから、信頼性試験
(85℃高温負荷試験,試験総数=9)を実施した結
果、従来方法によって製造されたAg−Pd導体材料か
ら成る端面電極の場合では導通不良の発生数が5/9
で、従来方法によって製造されたAg−Pt導体材料か
ら成る端面電極の場合では導通不良の発生数が9/9で
あるのに対し、前記の方法によって製造された端面電極
16の場合では導通不良の発生数が0/9で極めて良好
な結果が得られた。Incidentally, a Pb-free-claim solder having a composition of 1% by weight Sn, 2% by weight Ag and 0.5% by weight Cu was printed on the electrode 18 of the substrate 17 with a metal mask having a thickness of 0.15 mm. The end face electrode 16 manufactured by the method described above and the A manufactured by the conventional method shown in FIG.
After each of the end face electrodes made of the g-Pd conductor material and the end face electrodes made of the Ag-Pt conductor material manufactured by the conventional method shown in FIG.
After performing reflow three times at a peak of 0 ° C., a reliability test (85 ° C. high-temperature load test, total number of tests = 9) was performed. As a result, in the case of an end face electrode made of an Ag-Pd conductor material manufactured by a conventional method, 5/9 occurrences of conduction failure
In the case of the end face electrode made of the Ag-Pt conductor material manufactured by the conventional method, the number of occurrences of conduction failure is 9/9, whereas in the case of the end face electrode 16 manufactured by the above method, the conduction failure is poor. When the number of occurrences was 0/9, very good results were obtained.
【0035】尚、前述の説明では、製造過程において上
部導体膜12の表面部分のほぼ全体と内壁部分の一部を
覆うように保護導体膜15を形成したものを示したが、
図5(A),(B)に示すように保護導体膜15の表面
部分の面積を小さくして上部導体膜12の表面部分の中
心孔寄りの一部を覆うようにしたり、或いは、上部導体
膜12の基板表面側のエッジ部分の外面のみを覆うよう
に保護導体膜15を形成しても前記同様の作用効果を得
ることができる。In the above description, the protection conductor film 15 is formed so as to cover substantially the entire surface portion of the upper conductor film 12 and a part of the inner wall portion in the manufacturing process.
As shown in FIGS. 5A and 5B, the area of the surface portion of the protective conductor film 15 is reduced so as to cover a part of the surface portion of the upper conductor film 12 near the center hole, or Even if the protective conductor film 15 is formed so as to cover only the outer surface of the edge portion of the film 12 on the substrate surface side, the same function and effect as described above can be obtained.
【0036】また、前述の説明では、製造過程において
下部導体膜12の裏面部分及び内壁部分を覆うように補
強導体膜14を形成したものを示したが、補強導体膜1
4は必ずしも必要なものではない。In the above description, the reinforcing conductor film 14 is formed so as to cover the back surface portion and the inner wall portion of the lower conductor film 12 in the manufacturing process.
4 is not always necessary.
【0037】さらに、前述の説明では、製造過程におい
て上部導体膜12の基板表面側のエッジ部分の外面に保
護導体膜15を形成したものを示したが、図6(A)に
示すように補強導体膜14の基板裏面側のエッジ部分の
外面に保護導体膜15と同様の保護導体膜21を形成し
たり、或いは、図6(B)に示すように下部導体膜13
の基板裏面側のエッジ部分の外面に保護導体膜15と同
様の保護導体膜22を形成すれば、無鉛半田20によっ
て端面電極を形成するときに補強導体膜14や下部導体
膜13の基板裏面側のエッジ部分にエッジ切れを生じる
ことを防止することもできる。Further, in the above description, the protection conductor film 15 is formed on the outer surface of the edge portion of the upper conductor film 12 on the substrate surface side in the manufacturing process. However, as shown in FIG. A protective conductive film 21 similar to the protective conductive film 15 is formed on the outer surface of the edge portion of the conductive film 14 on the back surface side of the substrate, or the lower conductive film 13 is formed as shown in FIG.
A protective conductor film 22 similar to the protective conductor film 15 is formed on the outer surface of the edge portion on the back surface side of the substrate, so that when the end face electrode is formed by the lead-free solder 20, the reinforcing conductor film 14 and the lower conductor film 13 on the substrate back side are formed. Can also be prevented from being cut off at the edge portion.
【0038】さらに、前述の説明では、製造過程におい
て保護導体膜15,21及び22をCu導体材料から形
成したものを示したが、卑金属系導体材料、即ち、C
u,Ni,Zn,Pb,Fe,Sn,Al,Co,Cr
等の卑金属を1種または2種以上用いた導体材料や、前
記卑金属の合金を用いた導体材料等によって保護導体膜
15,21及び22を形成しても前記同様の作用効果を
得ることができる。In the above description, the protective conductor films 15, 21 and 22 are formed from a Cu conductor material in the manufacturing process.
u, Ni, Zn, Pb, Fe, Sn, Al, Co, Cr
Even if the protective conductor films 15, 21 and 22 are formed of a conductor material using one or more base metals such as the above, or a conductor material using an alloy of the above-mentioned base metals, the same operation and effect as described above can be obtained. .
【0039】[0039]
【発明の効果】以上詳述したように、本発明によれば、
基板の外側面に設けられた端面電極を無鉛半田によって
別の基板の電極に半田付けする場合でも、導通不良等の
問題を確実に回避して信頼性を大きく向上することがで
きる。As described in detail above, according to the present invention,
Even when the end surface electrode provided on the outer surface of the substrate is soldered to an electrode of another substrate by lead-free solder, problems such as poor conduction can be reliably avoided and reliability can be greatly improved.
【図1】端面電極を有する基板の従来の製造方法を示す
図FIG. 1 is a diagram showing a conventional method for manufacturing a substrate having an end face electrode.
【図2】図1に示した製造方法によって製造された基板
の端面電極を共晶半田を用いて別の基板に半田付けした
様子を示す図と、同基板の端面電極を無鉛半田を用いて
別の基板に半田付けした様子を示す図FIG. 2 is a view showing a state in which an end face electrode of a substrate manufactured by the manufacturing method shown in FIG. 1 is soldered to another substrate using eutectic solder, and an end face electrode of the same board using lead-free solder; Diagram showing soldering to another board
【図3】端面電極を有する基板の本発明適用の製造方法
を示す図FIG. 3 is a diagram showing a method of manufacturing a substrate having end electrodes according to the present invention;
【図4】図3に示した製造方法によって製造された基板
の端面電極を共晶半田を用いて別の基板に半田付けした
様子を示す図と、同基板の端面電極を無鉛半田を用いて
別の基板に半田付けした様子を示す図FIG. 4 is a view showing a state where an end surface electrode of a substrate manufactured by the manufacturing method shown in FIG. 3 is soldered to another substrate using eutectic solder, and an end surface electrode of the same substrate using lead-free solder; Diagram showing soldering to another board
【図5】図3に示した製造方法の変形例を示す図FIG. 5 is a view showing a modification of the manufacturing method shown in FIG. 3;
【図6】図3に示した製造方法の他の変形例を示す図FIG. 6 is a view showing another modification of the manufacturing method shown in FIG. 3;
11,11’…基板、11a…スルーホール、12,1
2’…上部導体膜、13,13’…下部導体膜、14,
14’…補強導体膜、15,15’,21,22…保護
導体膜、16…端面電極、17…基板、18…共晶半
田、19…無鉛半田。11, 11 ': substrate, 11a: through hole, 12, 1
2 ': Upper conductor film, 13, 13': Lower conductor film, 14,
14 ': reinforcing conductor film, 15, 15', 21, 22, ... protective conductor film, 16: end surface electrode, 17: substrate, 18: eutectic solder, 19: lead-free solder.
フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H05K 3/40 H01L 23/12 L Fターム(参考) 5E317 AA22 AA24 BB12 BB14 CC22 CD23 CD27 CD32 CD40 GG03 GG07 GG09 5E319 AA03 AB05 AC01 AC11 AC18 BB01 CC33 GG03 GG13 5E344 AA02 BB02 BB06 CC09 CC11 CC25 DD03 EE17 EE26 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (Reference) H05K 3/40 H01L 23/12 LF term (Reference) 5E317 AA22 AA24 BB12 BB14 CC22 CD23 CD27 CD32 CD40 GG03 GG07 GG09 5E319 AA03 AB05 AC01 AC11 AC18 BB01 CC33 GG03 GG13 5E344 AA02 BB02 BB06 CC09 CC11 CC25 DD03 EE17 EE26
Claims (9)
1つの端面電極を外側面に有する基板において、 前記端面電極は、基板表面から基板裏面に至るように設
けられたAg系導体材料から成る第1導体膜と、第1導
体膜の少なくとも基板表面側のエッジ部分の外面に設け
られた卑金属系導体材料から成る第2導体膜とから構成
されている、 ことを特徴とする基板。1. A substrate having, on an outer surface thereof, at least one end surface electrode extending from the substrate front surface to the substrate back surface, wherein the end surface electrode is formed of a first conductive material made of an Ag-based conductor provided from the substrate front surface to the substrate back surface. A substrate comprising: a conductive film; and a second conductive film made of a base metal-based conductive material provided on at least an outer surface of an edge portion of the first conductive film on the substrate surface side.
る、 ことを特徴とする請求項1に記載の基板。2. The substrate according to claim 1, wherein the second conductive film is made of a Cu-based conductive material.
部分とを除く部分は、基板の外側面に設けられた溝の内
面に設けられている、 ことを特徴とする請求項1または2に記載の基板。3. The substrate according to claim 1, wherein a portion of the end surface electrode other than a front surface portion and a back surface portion of the substrate is provided on an inner surface of a groove provided on an outer surface of the substrate. The substrate as described.
1つの端面電極を外側面に有する基板の製造方法におい
て、 基板に少なくとも1つのスルーホールを形成する工程
と、 基板表面からスルーホールを通じて基板裏面に至るよう
にAg系導体材料から成る第1導体膜を形成する工程
と、 第1導体膜の少なくとも基板表面側のエッジ部分の外面
に卑金属系導体材料から成る第2導体膜を形成する工程
と、 基板,第1導体膜及び第2導体膜をスルーホールを境に
分割する工程とを備える、 ことを特徴とする基板の製造方法。4. A method of manufacturing a substrate having at least one end surface electrode from a substrate surface to a substrate back surface on an outer surface, the method comprising: forming at least one through hole in the substrate; Forming a first conductor film made of an Ag-based conductor material so as to reach; and forming a second conductor film made of a base metal-based conductor material on at least an outer surface of an edge portion of the first conductor film on the substrate surface side; A step of dividing the substrate, the first conductive film and the second conductive film with a through hole as a boundary.
る、 ことを特徴とする請求項4に記載の基板の製造方法。5. The method according to claim 4, wherein the second conductive film is made of a Cu-based conductive material.
られたAg系導体材料から成る第1導体膜と、第1導体
膜の少なくとも基板表面側のエッジ部分の外面に設けら
れた卑金属系導体材料から成る第2導体膜とから構成さ
れた少なくとも1つの端面電極を外側面に有する第1基
板と、 前記第1基板の端面電極の基板裏面部分に対応する電極
を有する第2基板とを備え、 前記第1基板の端面電極は無鉛半田によって第2基板の
電極に接合されている、 ことを特徴とする基板の接続構造。6. A first conductor film made of an Ag-based conductor material provided from the substrate surface to the substrate back surface, and a base metal-based conductor provided on at least an outer surface of an edge portion of the first conductor film on the substrate surface side. A first substrate having at least one end electrode formed of a second conductor film made of a material on an outer surface; and a second substrate having an electrode corresponding to a back surface portion of the end electrode of the first substrate. An end face electrode of the first substrate is joined to an electrode of a second substrate by lead-free solder.
材料から成る、 ことを特徴とする請求項6に記載の基板の接続構造。7. The substrate connection structure according to claim 6, wherein the second conductor film of the first substrate is made of a Cu-based conductor material.
と基板裏面部分とを除く部分は、基板の外側面に設けら
れた溝の内面に設けられている、 ことを特徴とする請求項6または7に記載の基板の接続
構造。8. The substrate according to claim 1, wherein a portion of the end surface electrode of the first substrate other than the substrate front surface portion and the substrate rear surface portion is provided on an inner surface of a groove provided on an outer surface of the substrate. The connection structure of a substrate according to 6 or 7.
た電子部品とによって混成集積回路を構成する、 ことを特徴とする請求項6〜8の何れか1項に記載の基
板の接続構造。9. The substrate according to claim 6, wherein the first substrate forms a hybrid integrated circuit with electronic components mounted on the first substrate. Connection structure.
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|---|---|---|---|
| JP2001038167A JP2002246715A (en) | 2001-02-15 | 2001-02-15 | Substrate, its producing method and connecting structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001038167A JP2002246715A (en) | 2001-02-15 | 2001-02-15 | Substrate, its producing method and connecting structure |
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|---|---|
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ID=18901197
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| Country | Link |
|---|---|
| JP (1) | JP2002246715A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004343056A (en) * | 2003-04-25 | 2004-12-02 | Denso Corp | Thick film circuit board, its manufacturing method and integrated circuit device |
-
2001
- 2001-02-15 JP JP2001038167A patent/JP2002246715A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004343056A (en) * | 2003-04-25 | 2004-12-02 | Denso Corp | Thick film circuit board, its manufacturing method and integrated circuit device |
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