JP2002246413A - Heat/electric conductive film for connecting and its application - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat/electric conductive film for connecting having a low heat resistance, while relaxing a thermal stress of a connecting part, further excellent adhesive properties, a PCT resistance and a heat cycle resistance. SOLUTION: The thermal/electrical conductive film for connecting comprises thermal heat/electric conductors, embedded in a thickness direction of an insulating film or penetrating the film of 3 to 90 vol.% to the film; and in this case, the film has a storage elastic modulus of 0.5 to 5,000 MPa in the range of -70 to 200 deg.C and its application.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat / electrically conductive film and its use, and more particularly to a heat / electrically conductive film for thermal connection and its use, such as a wiring board for mounting a semiconductor and a semiconductor device. And a method for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In recent years, the mounting density of electronic components has increased with the development of electronic devices, and semiconductors having a size substantially equal to the size of a semiconductor chip called a chip scale package or a chip size package (hereinafter referred to as a CSP). New types of mounting methods, such as package and semiconductor bare chip mounting, have begun to be adopted.

One of the most important characteristics of a mounting board on which various electronic components including a semiconductor element are mounted is reliability. Among them, the connection reliability against thermal fatigue is a very important item because it is directly related to the reliability of the device using the mounting board.

[0004] As a cause of lowering the connection reliability,
Thermal stress caused by using various materials having different thermal expansion coefficients can be given. This is because the thermal expansion coefficient of a semiconductor chip is as small as about 4 ppm / ° C, whereas the thermal expansion coefficient of a wiring board on which electronic components are mounted is as large as 15 ppm / ° C or more, so that thermal strain is generated due to thermal shock. The thermal strain causes thermal stress.

[0005] In a substrate on which a semiconductor package having a conventional QFP and SOP type lead frame is mounted, thermal stress is absorbed in the lead frame portion and reliability is maintained.

However, in bare chip mounting, a method of connecting electrodes of a semiconductor chip to wiring pads of a wiring board using solder balls or a method of forming small projections called bumps and using a conductive paste is used. Thermal stress was concentrated on the connection portion, and the connection reliability was reduced. It is known that it is effective to inject a resin between the chip and the wiring board to disperse the thermal stress (underfill). However, the number of mounting steps for forming the underfill increases, leading to an increase in cost. I was There is also a method of connecting the electrodes of the semiconductor chip and the wiring pads of the wiring board using conventional wire bonding.However, in order to protect the wires, it is necessary to cover the encapsulant resin, which also increases the mounting process. Was.

As described above, an area array is required in response to a demand for higher density of a semiconductor device, and an electric connection portion such as a wiring board having excellent stress relaxation properties is required. In addition, with the increase in density and miniaturization of semiconductor packages, materials capable of precise alignment and capable of relaxing stress have been required for semiconductor packages.

[0008]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a printed wiring which is useful for increasing the density of a semiconductor device, has an area array shape, is excellent in stress relaxation, has low thermal resistance, and is excellent in adhesion and weather resistance. An object of the present invention is to provide a board material, for example, a wiring board for mounting a semiconductor such as a heat / electrically conductive film or the like, and a thermal stress buffering electrical connection used for a semiconductor device or the like.

[0009]

According to the present invention, there is provided a heat conductive / electrical conductor embedded in a thickness direction of an insulating film or penetrating the film. The film has a temperature of -70 ° C to 200 ° C.
The present invention relates to a heat / electrically conductive film for connection, which has a storage modulus of 0.5 to 5000 MPa in the range of ° C.

[0010] The present invention also provides a heat conductive / electrical conductor embedded in the thickness direction of the insulating film having a three-layer structure or penetrating the film for 3 to 90 times.
% By volume and the film has a temperature of −70 ° C. to 20 ° C.
In the range of 0 ° C., the inner layer
a, and the outer layer is 0.5-5000M
The present invention relates to a heat / electrically conductive film for electrical connection, which has a storage modulus of Pa.

[0011]

BEST MODE FOR CARRYING OUT THE INVENTION The insulating film (outer layer) used in the present invention has a storage elastic modulus, as measured with a viscoelasticity measuring device, of 0.5 to 70 ° C. to 200 ° C.
5000 MPa. The storage modulus is from -70 ° C to 2 ° C.
It is preferably 0.5 to 3500 MPa in the range of 00 ° C, and 0.5 to 1000 MPa in the range of 25 ° C to 200 ° C.
More preferably, it is MPa. Storage elasticity 5000M
If it is more than Pa, the stress relaxation property is lowered, which is not preferable in that the reliability is lowered. The elastic modulus is preferably not less than 0.5 MPa, and if it is less than 0.5 MPa, it easily causes cohesive failure inside, which is not preferable in that heat resistance is lowered. The thickness of the film is preferably from 3 to 500 μm, more preferably from 20 to 300 μm. As a method of controlling the storage modulus within this range,
There is a method of combining a polymer having a low glass transition point Tg with a polymer having a high glass transition point Tg.

The heat and electric conductors of the present invention are silver, gold,
Copper, nickel, tin and the like can be mentioned. Thermal and electrical conductors can consist of single elements, compounds, metals, and alloys.

[0013] In order to sufficiently exhibit the effect of the heat conductive / electrically conductive film of the present invention, the volume ratio of the heat conductive / electric conductive in the film of the present invention is 3 to 90% by volume based on the film. is there. When the content is less than 3% by volume, the thermal conductivity is low, and when a high current is applied, the electrical conductivity is low. When the content is 90% by volume or more, conductivity in the longitudinal direction of the film is easily developed, and the adhesiveness is low. The volume ratio of the heat conductive / electrical conductor in the film is preferably 8 to 50% with respect to the film, and 10 to 4%.
0% is more preferred.

The heat and electric conductive film of the present invention can be manufactured by a method of forming a heat and electric conductor after perforating an insulating resin film. For example, laser, drill, mold,
Etching etc. are mentioned. The heat / electrical conductor penetrating the film in the thickness direction can be provided by printing a conductive paste on the perforated film. As a printing method, a screen printing method, a printing method using a squeegee, or the like can be applied. For example, when a silver paste is used as the conductive paste, after piercing the insulating resin film with a laser, and printing the silver paste using a squeegee, the thickness of the insulating film is reduced as shown in FIG. A heat and electric conductive film provided with a heat and electric conductor penetrating in the vertical direction can be produced. The shape may be a column, a rectangular parallelepiped, a sphere, a square pole, a cone, or the like. Width (diameter) is 1-2
It is preferably 000 μm.

There is also a method of embedding a heat conductive / electrical conductor formed in advance in a resin film. For example, there is a method in which a silver paste is printed on a plastic film to form bumps, the resin film is pressed against the bumps, and then only the plastic film is removed by peeling or the like. Further, as described in Japanese Patent Application No. 10-47113, a foil having a metal bump formed on a metal foil is used, and a resin film is pressed thereon, and then unnecessary metal foil is etched. By the method of removing in (1), the heat / electrically conductive film of the present invention as shown in FIG. 2 can be produced. Since this method does not require drilling, it is preferable in that the process is simplified.

The film of the present invention can be used for bonding a semiconductor chip and a wiring board after being divided into a predetermined size. Also, laminated on both sides of the obtained film under pressure and heat, unnecessary parts are removed by etching,
Those having a wiring board can also be used. After being attached to a semiconductor in a wafer state, the semiconductor device can be cut out to a predetermined size to manufacture a semiconductor device, which can be used by being bonded to a wiring board. Further, by providing the heat and electric conductive film of the present invention on a printed wiring board, a wiring board for mounting a semiconductor can be obtained.

The heat / electrically conductive film of the present invention is a resin film having a three-layer structure in which a resin layer serving as an outer layer is laminated on both sides of a resin layer serving as an inner layer. It is preferred in that respect. Here, the outer layer can be formed using the same material as the single-layer heat / electrically conductive film. For example, there is a film having a structure as shown in FIG. Alternatively, a resin layer serving as an outer layer may be laminated only on one side of the resin layer serving as an inner layer, to form a two-layer structure.

According to the present invention, as the inner layer, a resin layer such as a polyimide film or a polyester film can be used. Among them, those having a coefficient of thermal expansion of 4 to 12 ppm / ° C. and a tensile modulus of 5 GPa or more are preferable in that the film is less deformed and precise alignment is possible. The insulating film (inner layer) used in the present invention has a storage elastic modulus of 600 at a temperature in the range of −70 ° C. to 200 ° C.
0 to 50,000 MPa. The storage modulus is 60
It is preferably from 00 to 30,000 MPa,
More preferably, it is 15000 MPa. As such a film, a liquid crystal polymer film, an aramid film, a polyimide film, a glass cloth, a film made of an epoxy resin reinforced with an aramid fiber, or the like can be used. Here, additives and the like can be arbitrarily added within a range that does not adversely affect the characteristics of the present invention.

According to the present invention, the storage elastic modulus of the outer layer is 5 in the three-layer type heat / electrically conductive film of the present invention.
000 MPa or less. The film of the present invention preferably has a thickness of 1 to 5 mm, more preferably 50 μm to 1 mm. Further, the total thickness of the outer layer is preferably at least twice the thickness ratio of the inner layer to the inner layer,
More preferably, it is 10 times or more. For example, when the inner layer is 1 to 400 μm, each outer layer is preferably 1 to 4000 μm. Further, it is more preferable that the inner layer has a thickness of 20 to 100 μm and the outer layer has a thickness of 20 to 300 μm because the displacement is small and the stress relaxation property is high. When the inner layer is too thin, the stress relaxation is high because the elastic modulus is small, but the displacement due to deformation or thermal expansion is large. If the inner layer is too thick, there is a problem that the displacement is small, but the shear deformation is difficult, so that the stress is not sufficiently relaxed and the warpage of the substrate becomes large.

The resin material used for the outer layer is preferably a mixture of a thermosetting resin and a resin having plasticity.
Examples of the thermosetting resin include, but are not limited to, an epoxy resin, a cyanate ester resin, a cyanate resin, a silicone resin, and a curing agent and a curing accelerator thereof. Epoxy resins are particularly preferred in terms of good heat resistance after curing. The epoxy resin may be any resin as long as it cures and exhibits an adhesive action. Bifunctional or higher, preferably with a molecular weight of less than 5000, more preferably 3000
Less than less epoxy resin can be used. Examples of the bifunctional epoxy resin include a bisphenol A type or a bisphenol F type resin. As Bisphenol A type or Bisphenol F type liquid resin, Yuko Shell Epoxy Co., Ltd. Epicoat 807, Epicoat 827,
Or Epicoat 828, and D.C. E. FIG. R. 330, D.I. E. FIG. R. 331, or D.I. E. FIG. R. 361, and a commercially available product such as YD8125 or YDF8170 manufactured by Toto Kasei Co., Ltd. can be used.

As the epoxy resin, a polyfunctional epoxy resin can be added for the purpose of increasing the glass transition point (Tg). Examples of the polyfunctional epoxy resin include a phenol novolak epoxy resin and a cresol novolak epoxy resin. As a phenol novolak type epoxy resin, EPPN-20 manufactured by Nippon Kayaku Co., Ltd.
And cresol novolak type epoxy resins such as ESCN-190 or ESCN-195 manufactured by Sumitomo Chemical Co., Ltd., and ECN manufactured by Nippon Kayaku Co., Ltd.
OCN1012, EOCN1025, or EOCN
1027, and YDCN701 manufactured by Toto Kasei Co., Ltd.
YDCN702, YDCN703, or YDCN7
A commercially available product such as 04 can be used.

As the curing agent for the epoxy resin, those usually used as curing agents for the epoxy resin can be used, and amine, polyamide, acid anhydride, polysulfide, boron trifluoride, and phenolic hydroxyl group are contained in one molecule. And bisphenol A, bisphenol F, bisphenol S, etc., which are compounds having at least one compound. In particular, it is preferable to use a phenol resin such as a phenol novolak resin, a bisphenol novolak resin, or a cresol novolak resin because of its excellent electric corrosion resistance when absorbing moisture. Those other than bisphenol A are preferable because they have no mutagenicity and have little adverse effect on the environment and the human body.

According to the present invention, a known curing agent can be used as long as it can cure the epoxy resin, and is not particularly limited. Examples of such a curing agent include polyfunctional phenols, amines, imidazole compounds, acid anhydrides, organic phosphorus compounds, and halides thereof, polyamide, polysulfide, boron trifluoride, and the like. Examples of polyfunctional phenols include bisphenol A, which is a monocyclic bifunctional phenol,
Bisphenol F, bisphenol S, naphthalene diols, biphenols, and halides thereof,
Alkyl group substituents and the like can be mentioned. In addition, phenol resins such as phenol novolak resins, resole resins, bisphenol A novolak resins, and cresol novolak resins, which are polycondensates of these phenols and aldehydes, are exemplified. As a curing agent, for example, phenolite LF288 manufactured by Dainippon Ink and Chemicals, Inc.
2, phenolite LF2822, phenolite TD-2
090, Phenolite TD-2149, Phenolite V
A commercially available product such as H4150 or phenolite VH4170 can be used.

It is preferable to use a curing accelerator together with the curing agent, and any known curing accelerator can be used without any particular limitation. For example, various imidazoles can be used. As imidazole, 2-
Methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole,
1-cyanoethyl-2-phenylimidazolium trimellitate and the like. Slow curing speed at room temperature,
For example, 1-cyanoethyl-2-phenylimidazole is preferred. As imidazoles, 2E4MZ, 2PZ-CN, or 2PZ-CN manufactured by Shikoku Chemical Industry Co., Ltd.
Commercial products such as CNS can be used.

Further, according to the present invention, a latent curing accelerator is preferable in that the life of the film is prolonged. For example, dicyandiamide, dihydrazide compounds such as adipic dihydrazide, guanamic acid, melamic acid, addition compounds of epoxy compounds and imidazole, addition compounds of epoxy compounds and dialkylamines, addition compounds of amines and thioureas, amines But is not limited thereto. Further, an adduct-type structure is preferable in that the activity at room temperature can be reduced.

Among the resin materials used for the outer layer, examples of resins having plasticity include acrylic rubber, butadiene rubber, phenoxy resin, silicone resin, and silicone-modified polyamideimide. In particular, the weight average molecular weight is 1 ×
A high molecular weight component of 10 ⁵ or more is preferred in that the strength of the film is high.

The high molecular weight component which is incompatible with the epoxy resin and has a weight average molecular weight of 1 × 10 ⁵ or more includes:
Rubbers such as acrylics, silicone resins, and silicone-modified resins such as silicone-modified polyamideimide are exemplified. The term "incompatible with the epoxy resin" means a property of being separated from the epoxy resin and being separated into two or more phases after curing. Glycidyl (meth) acrylates 2-6
The epoxy group-containing acrylic copolymer (hereinafter abbreviated as A copolymer) having a Tg of -10 ° C. or more containing 1% by weight and a weight average molecular weight of 1 × 10 ⁵ or more has adhesiveness and heat resistance. It is particularly preferred because of its high point. As the A copolymer, a commercially available product can be used. For example, HTR-860P-3 (manufactured by Teikoku Chemical Industry Co., Ltd.) can be used. When the carboxylic acid type acrylic acid or the hydroxyl group type hydroxymethyl (meth) acrylate is used as the functional group monomer, the crosslinking reaction proceeds easily, and gelation in a varnish state, B
There is a tendency that problems such as a decrease in adhesive strength due to an increase in the degree of curing in the stage state occur.

The amount of glycidyl (meth) acrylate used as the functional group monomer is preferably set to a copolymer ratio of 2 to 6% by weight. The content is preferably 2% by weight or more for obtaining an adhesive force, and 6% for preventing gelation of rubber.
% By weight or less is preferred. The remainder can be ethyl (meth) acrylate, butyl (meth) acrylate or a mixture of both, but the mixing ratio depends on the Tg of the copolymer.
Determined in consideration of. When Tg is less than -10 ° C, B
Since the tackiness of the film in the stage state increases and the handling property tends to deteriorate, the temperature is preferably set to -10 ° C or higher. If the Tg is too high, the film tends to break at room temperature during handling. Examples of the polymerization method include pearl polymerization, solution polymerization, and the like, which can be obtained.

A coupling agent may be added to the adhesive in order to improve the interfacial bonding between different materials.
As the coupling agent, a silane coupling agent is preferable.

Examples of the silane coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-ureidopropyltriethoxysilane, N-2-aminoethyl And -3-aminopropyltrimethoxysilane. The amount of the coupling agent is determined based on the effect of the addition, heat resistance and cost.
It is preferable to add 0.1 to 10 parts by weight to 00 parts by weight.

According to the present invention, commercially available products can be used as the silane coupling agent. For example, in the case of Nippon Unicar Co., Ltd., NUC A-187; 3-glycidoxypropyltrimethoxysilane
NUC as mercaptopropyltrimethoxysilane
A-189; NUC A-1100 as 3-aminopropyltriethoxysilane; NUC A-1160 as 3-ureidopropyltriethoxysilane; N
NUC A-1120 and the like are exemplified as -2-aminoethyl-3-aminopropyltrimethoxysilane.

The resin composition of the present invention may further contain an ion-trapping material for adsorbing ionic impurities and improving insulation reliability during moisture absorption. Further, other known additives can be optionally added to the resin composition of the present invention.

The insulating film of the present invention is obtained by dissolving or dispersing each component of the adhesive in a solvent to form a varnish, coating the film on a carrier film, heating and removing the solvent to form a resin layer on the carrier film. It can be obtained by forming on it. It can be obtained by applying an insulating film divided into two or more layers and then bonding them, but the process becomes complicated and the cost tends to increase. Examples of such a carrier film include a polytetrafluoroethylene film, a polyethylene terephthalate film, various films subjected to a release treatment, such as a plastic film such as a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. Can be For example,
The release treated polyethylene terephthalate film is
Commercially available products such as Lumirror (manufactured by Toray DuPont) and Purex (manufactured by Teijin Limited) can be used.

The varnishing solvent is a solvent having a relatively low boiling point,
For example, it is preferable to use methyl ethyl ketone, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl cellosolve, methanol, ethanol, 2-methoxyethanol and the like. In addition, a high-boiling solvent can be added for the purpose of improving the coating properties.
Examples of the high boiling point solvent include dimethylacetamide, dimethylformamide, methylpyrrolidone, cyclohexanone and the like.

The varnish can be produced by a grinder, a three-roll mill, a bead mill or the like, or a combination thereof. After the varnish is formed, it is preferable to remove bubbles in the varnish by vacuum degassing.

As a method for making a hole in the insulating resin film, a laser, a drill, a mold, etching or the like can be used. The heat / electrical conductor that penetrates the film in the thickness direction can be provided by printing a conductive paste on the perforated film. As a printing method, screen printing or printing using a squeegee can be used. For example, when a silver paste is used as the conductive paste, a hole is drilled in the insulating resin film with a laser, and then the silver paste is printed using a squeegee, so that the heat conduction penetrating the insulating film in the thickness direction is performed.・ Thermal / electrically conductive film provided with an electric conductor can be manufactured. Also, after forming metal bumps on metal foil in advance,
The heat and electric conductive film of the present invention can also be produced by a method in which a resin film is pressed and then unnecessary metal foil is removed by etching or the like. According to the present invention, when this method is used, it is not necessary to perform drilling, so that it is preferable that the process is simplified.

The film of the present invention is obtained by dividing a film on which a heat and electric conductor is disposed into a predetermined size in consideration of a chip and a wiring board to be bonded or electrically connected, and then dividing the film into a semiconductor chip such as a bare chip. A semiconductor package can be formed by using for bonding and electrical connection between the semiconductor device and a wiring board.
After the semiconductor device is attached to a semiconductor in a wafer state, the semiconductor device can be cut out to a predetermined size to manufacture a semiconductor device, which can be bonded to a wiring board and used. Further, by providing the heat and electric conductive film of the present invention on a printed wiring board, a wiring board for mounting a semiconductor can be obtained.

[0038]

The present invention will be described in more detail with reference to the following examples, which do not limit the present invention in any way. Here, “parts” means “parts by weight” unless otherwise specified.

Preparation of insulating film (or outer layer film) As a thermosetting resin, bisphenol A epoxy resin 4
5 parts (epoxy equivalent 190, Epicoat 828, manufactured by Yuka Shell Epoxy Co., Ltd.) and 15 parts of cresol novolak type epoxy resin (epoxy equivalent 195, ESCN
195, manufactured by Sumitomo Chemical Co., Ltd.), and 40 parts of a phenol novolak resin (Plyofen LF2882, manufactured by Dainippon Ink and Chemicals, Inc.) were used as a curing agent for the epoxy resin. As a plastic resin, 150 parts of an epoxy group-containing acrylic rubber (molecular weight: about 7 × 10 ⁵ , HR
TR-860P-3, manufactured by Teikoku Chemical Industry Co., Ltd.). 0.7 parts of 3-glycidoxypropyltrimethoxysilane (NUC A-18) as a silane coupling agent
7, manufactured by Nippon Unicar Co., Ltd.). To a mixture of the above-mentioned thermosetting resin, curing agent, resin having plasticity, and silane coupling agent, methyl ethyl ketone is added as a solvent and mixed by stirring, and 0.5 part of 1-cyanoethyl-2-phenylimidazole is used as a curing accelerator. (Curesol 2
PZ-CN, manufactured by Shikoku Chemical Industry Co., Ltd.) was added and mixed with a stirring motor for 30 minutes to obtain a varnish. The varnish was applied on a 75 μm-thick release-treated polyethylene terephthalate film (Purex S-31, manufactured by Teijin Limited, degree of contact with water: 130 ° C.), and dried by heating at 140 ° C. for 5 minutes to form a film. A B-stage coating film having a thickness of 75 μm was formed, and an insulating film provided with a carrier film was produced. The elastic modulus at 25 ° C. of this resin film is
It was 3000 MPa. The obtained insulating film is
When heated and cured at 70 ° C. for 1 hour, the storage elastic modulus was measured.
At 200 ° C., 20 MPa at 100 ° C., and MPa at 200 ° C.

Example 1 A 10 μm thick copper foil having a thickness of 50 μm on an insulating film was used.
A copper foil with bumps, in which 0 × 50 μm high copper bumps are provided in a grid pattern at 200 μm intervals, at a temperature of 80 ° C. and a pressure of 0.3 MPa,
Under a condition of a speed of 0.3 m / min, the substrates were bonded using a hot roll laminator, and the copper foil other than the bumps was removed by etching. The bumps were embedded in the film but did not penetrate.

Evaluation Method (Electrical Resistance) The film of the present invention and a copper foil having a thickness of 35 μm (GTS-35, manufactured by Furukawa Circuit Foil) were subjected to a hot roll laminator at a temperature of 100 ° C. and a pressure of 0.5 μm.
Lamination at 3MPa, 0.3m / min speed, then 1
The sample was cured at a temperature of 70 ° C. for 1 hour and cut into a size of 10 × 10 mm in length and width to form a sample. The resistance of both sides of the sample was measured. In addition, what was 1000 ohm / cm or more was set to Open.

(Heat Cycle Resistance) The film of the present invention and a copper foil having a thickness of 35 μm (GTS-35, manufactured by Furukawa Circuit Foil) were heated at a temperature of 100 ° C., a pressure of 0.3 MPa and a speed of 0 using a hot roll laminator. The sample was bonded at a condition of 0.3 m / min, cured at 170 ° C. for 1 hour, and cut into a size of 10 × 10 mm in length and width to form a sample. The reliability is as follows.
The process of leaving for 0 minute and then leaving for 30 minutes in an atmosphere of 125 ° C. was defined as one cycle, and the presence or absence of delamination such as peeling or cracking after 1000 cycles was evaluated using an ultrasonic microscope. ○ indicates destruction, and X indicates no destruction.

(Thermal Resistance) The film of the present invention was used as a heat dissipation sheet (thickness: 0.07 mm) to a thickness of 35 μm and a length and width of 10 ×.
A 14 mm copper foil and an aluminum plate having a thickness of 2 mm and a length and width of 30 × 30 mm were subjected to a temperature of 100 ° C. and a pressure of 1.96 MPa for 30 minutes.
The layers were laminated by heating and pressing for minutes. A transistor (2SC2233) was fixed to the copper foil of this test piece with solder, and a current was passed through the transistor on the heat dissipation block so that the aluminum plate side was in contact with the heat dissipation block. Then, the temperature (T ₁ ) of the transistor and the heat radiation block temperature (T ₂ ) are measured. From the measured value and the applied power (W), the following equation is obtained: X [° C./W]=｛(T ₁ −T ₂ ) The thermal resistance (X) was calculated by [° C.] / {W [W]}. Table 1 shows the results.

(Adhesive strength) Adhesive strength was measured by using a hot roll laminator at a temperature of 100 ° C. and a pressure of 0.3 MPa using a 50 μm polyimide film, Upilex S (manufactured by Ube Industries, Ltd.) on both sides of the film of the present invention. Bonding at a speed of 0.3 m / min, then curing at a temperature of 170 ° C. for 1 hour, supporting the polyimide film on both sides of the sample cut to a width of 10 mm, and using TOYO BA
Using LWIN UTM-4-100 Tensilon,
At a speed of 50 mm / min in the direction of 180 degrees in an atmosphere at room temperature,
The T-peel strength was measured.

(Modulus of Elasticity)
After curing for a period of time, the storage elastic modulus in that state was measured using a dynamic viscoelasticity measuring device DVE-V4 (manufactured by Reojiro) (sample size: length 20 mm, width 4 mm, film thickness 80 μm).
m, heating rate 5 ° C / min, tensile mode, 10Hz, automatic static load).

(Solder Heat Resistance) A polyimide film having a thickness of 50 μm was coated on both sides of the film of the present invention at a temperature of 80 μm.
At a temperature of 0.3 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min, they were bonded using a hot roll laminator.
Cured for 1 hour at ° C. 30x30mm length and width of this sample
Were prepared and their heat resistance was examined. The evaluation method of heat resistance is as follows: 85 ° C./relative humidity 85
%, The sample left for 48 hours was floated in a solder bath at 260 ° C., and abnormal occurrence such as swelling up to 120 seconds was examined. A sample in which abnormality was observed in all samples was evaluated as x, a sample in which an abnormality occurred and a sample in which no abnormality was observed was evaluated as Δ, and a sample in which no abnormality was observed in all samples was evaluated as ○.

(PCT Resistance Test) A polyimide film having a thickness of 50 μm was coated on both sides of the film of the present invention at a temperature of 80 μm.
At a temperature of 0.3 ° C., a pressure of 0.3 MPa, and a speed of 0.3 m / min, they were bonded using a hot roll laminator.
Cured for 1 hour at ° C. 30x30mm length and width of this sample
Were prepared and their PCT resistance was examined. PC resistant
The T property was evaluated in an atmosphere (pressure cooker test: PCT treatment) at a temperature of 121 ° C., a humidity of 100%, and a pressure of 2 atm.
This was performed by observing the peeling of the adhesive after 168 hours. When peeling was observed, it was evaluated as x, and when peeling was not observed, it was evaluated as o.

Example 2 A copper foil with bumps in which copper bumps having a diameter of 100.times.50 .mu.m and having a height of 200 .mu.m were provided in a grid pattern at intervals of 200 .mu.m on a 30 .mu.m thick copper foil on an insulating resin film was heated at a temperature of 80.degree. 0.6
The layers were bonded using a hot roll laminator under the conditions of MPa and a speed of 0.3 m / min, and the copper foil other than the bumps was removed by etching. The bumps were embedded in and penetrated the film.

Example 3 A hole having a diameter of 100 × 30 μm in depth was formed in the insulating resin film by a laser, and a silver paste was printed in the hole. The silver paste did not penetrate the film.

Example 4 After a polyimide film having a thickness of 25 μm was laminated on both sides of the insulating resin film, a hole having a diameter of 100 μm was formed by a laser, and a silver paste was printed in the hole. The silver paste had penetrated the film.

Comparative Example 1 The same procedure as in Example 1 was carried out, except that no heat and electric conductor penetrating the film was formed.

The characteristics of the films obtained in Examples 2, 3, 4 and Comparative Example 1 were evaluated by the above evaluation methods. Table 1
Shows the results.

[0053]

[Table 1] Note: Examples 1 and 3 have the thermal and electrical conductors embedded, Examples 2 and 4 have the thermal and electrical conductors penetrated, and Comparative Example 1 has the thermal and electrical conductors penetrated. Has no conductor.

All of Examples 1 to 4 are free from destruction, have good reliability, have low heat resistance, and are excellent in all of adhesiveness, PCT resistance and heat cycle resistance. On the other hand, Comparative Example 1 has no electrical connection, has higher thermal resistance, and is inferior in heat dissipation.

Example 5 A film obtained in Example 2 was mounted on a circuit-processed wiring board between a semiconductor chip (logic element of 10 mm square and 450 μm thickness) and a copper-clad laminate, and a semiconductor mounting device ( Using a CM-110 manufactured by Hitachi Tokyo Electronics Co., Ltd., the pad portion was aligned with an accuracy of a maximum error of 20 μm.
Thereafter, the resin of the film of the present invention was allowed to flow on a hot plate at 160 ° C. under a load of 1 kg for 3 seconds, and was cured to form a connection. After further curing at 170 ° C for 1 hour,
A resin (CEL-C-
7200, sealing agent manufactured by Hitachi Chemical Co., Ltd.)
After curing at 0 ° C. for 1 hour, a semiconductor package was obtained.

(Insulation Reliability Test by Heat Cycle)
The sample was left for 30 minutes in an atmosphere of -55 ° C for 30 minutes, and then for 30 minutes in an atmosphere of 125 ° C.
The reliability after 000 cycles was evaluated. The evaluation was carried out by using an ultrasonic microscope to examine whether or not occurrence of peeling and cracking of the bonded portion occurred. ○ indicates destruction, and X indicates no destruction.

[0057]

[Table 2]

Embodiment 5 of the joint according to the present invention
Even after 0 cycles, there is no destruction and excellent reliability.

[0059]

As described above, a film obtained by attaching a semiconductor chip to a wiring board using the film of the present invention has low thermal resistance, excellent adhesiveness, PCT resistance, heat cycle resistance, etc. Is also good.

[Brief description of the drawings]

FIG. 1 is an example of a heat and electric conductive film (penetration type) of the present invention.

FIG. 2 is an example of the heat and electric conductive film (embedded type) of the present invention.

FIG. 3 is an example of a three-layer type heat and electric conductive film of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Heat conductive electric conductor 2 Insulating film, resin film, outer layer film 3 Insulating film, resin film, inner layer film

Continued on the front page (72) Inventor Tetsuya Enomoto 48 Wadai, Tsukuba, Ibaraki Prefecture Within Hitachi Chemical Co., Ltd. In-house F term (reference) 5F044 KK01 LL13

Claims (8)

[Claims] 1. A heat-conductive / electrical conductor embedded in or penetrating the insulating film in a thickness direction of the insulating film is contained in an amount of 3 to 90% by volume with respect to the film, and the film has a temperature of −70 ° C. In the range of 200 ° C., 0.5
A heat / electrically conductive film for connection, having a storage modulus of up to 5000 MPa. 2. The heat / electrically conductive film according to claim 1,
(A) 100 parts by weight of an epoxy resin and a curing agent thereof, and (b) 2 to 6% by weight of glycidyl (meth) acrylate having a glass transition temperature of -10 ° C or higher and a weight average molecular weight of 1 × 10 ⁵ or higher. The thermal / electrically conductive film according to claim 1, comprising 50 to 300 parts by weight of an epoxy group-containing acrylic copolymer that is: 3. A heat conductive / electrical conductor embedded in the thickness direction of the insulating film having a three-layer structure or penetrating the film is contained in an amount of 3 to 90% by volume with respect to the film, and the film comprises: In a temperature range of −70 ° C. to 200 ° C., the inner layer has a storage elastic modulus of 6000 to 50,000 MPa, and the outer layer has a storage elastic modulus of 0.5 to 5000 MPa. Electrically conductive film. 4. The heat / electrically conductive film has an outer layer comprising: (a) 100 parts by weight of an epoxy resin and a curing agent thereof;
And (b) glycidyl (meth) the glass transition temperature containing 2-6 wt% acrylate -10 ° C. or more and a weight average molecular weight of 1 × 10 ⁵ or more epoxy group-containing acrylic copolymer 50 to 300 4. The composition of claim 3 including parts by weight.
2. The heat and electric conductive film according to 1. 5. The heat / electrically conductive film according to claim 1, wherein the film has an adhesive property. 6. A method for manufacturing a semiconductor device, comprising bonding the heat / electrically conductive film according to claim 1 onto a wafer and dividing the film into small pieces. 7. A semiconductor device manufactured by bonding the heat / electrically conductive film according to claim 1 on a wafer and dividing the film into small pieces. 8. A semiconductor chip mounting surface of a mounting wiring board,
A wiring board for mounting a semiconductor, comprising the heat / electrically conductive film according to claim 1.