JP2002236379A - Electrophotographic photoreceptive member and electrophotographic device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electrophotographic photoreceptive member having excellent image characteristics even in electrostatic charge characteristics of a negative charge and digital full-colors and an electrophotographic device. SOLUTION: A front surface layer of the electrophotographic photoreceptive member which is successively laminated with at least a photoconductive layer and front surface layer on a conductive base and in which the photoconductive layer and front surface layer consist of an amorphous material containing silicon atoms has a laminar front surface region and a laminar connecting region for connecting the front surface region and the photoconductive layer. The connecting region contains silicon atoms, carbon atoms and at least one kind of periodic table group 13 atoms. The contents of the group 13 atoms in the connecting region are increased than the boundary of photoconductive layer side and are so distributed as to have the maximum value in the thickness direction of the connecting region. This electrophotographic device has such electrophotographic photoreceptive member and performs image exposure by coherent light of 500 to 800 nm in wavelength.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to light which is susceptible to electromagnetic waves such as light (here, light in a broad sense, meaning ultraviolet light, visible light, infrared light, X-rays, .gamma.-rays, etc.). The present invention relates to a receiving member and an electrophotographic apparatus using the light receiving member.

[0002]

2. Description of the Related Art In the field of image formation, a photoconductive material for forming a light receiving layer in a light receiving member has high sensitivity.
High SN ratio (photocurrent (Ip) / dark current (Id)), having an absorption spectrum suitable for the spectral characteristics of the radiated electromagnetic wave, fast photoresponse, having the desired dark resistance, Are required to be harmless to the human body. In particular, in the case of a light receiving member to be incorporated in an electrophotographic apparatus used in an office as an office machine, the above-mentioned non-pollutability at the time of use is important.

[0003] Hydrogenated amorphous silicon (hereinafter referred to as "a-Si: H") is a photoconductive material exhibiting such excellent properties.
For example), for example, Japanese Patent Publication No. 60-35059.
The publication describes an application as a light receiving member for electrophotography.

In general, such a light receiving member is obtained by heating a conductive support to 50 ° C. to 350 ° C. and depositing the conductive support on the support by a vacuum deposition method, a sputtering method, an ion plating method, or a thermal CVD method. Then, a photoconductive layer made of a-Si is formed by a film forming method such as a photo CVD method or a plasma CVD method. Above all, the plasma CVD method, that is, the raw material gas is decomposed by high frequency or microwave glow discharge and
A method for forming an a-Si deposited film has been put to practical use as a suitable method.

In Japanese Patent Application Laid-Open No. 56-83746, a conductive support and an a-Si (hereinafter referred to as “a-Si: X”) photoconductive layer containing a halogen atom as a constituent element are disclosed. A light receiving member for electrophotography has been proposed. In this publication, a-Si is provided with 1 to 40 halogen atoms.
By containing at%, heat resistance is high, and good electrical and optical characteristics can be obtained as a photoconductive layer of a light receiving member for electrophotography.

Japanese Patent Application Laid-Open No. 57-115556 discloses that a photoconductive member having a photoconductive layer composed of an a-Si deposited film has an electrical property such as a dark resistance value, photosensitivity, and photoresponsiveness. In order to improve the use environment characteristics such as optical and photoconductive characteristics and moisture resistance, as well as the stability over time, silicon atoms and carbon atoms are deposited on a photoconductive layer composed of an amorphous material containing silicon atoms as a base material. A technique for providing a surface barrier layer made of a photoconductive amorphous material containing atoms is described. Further, Japanese Patent Application Laid-Open No. Sho 60-67951 describes a technique for a light receiving member in which a light-transmitting insulating overcoat layer containing amorphous silicon, carbon, oxygen and fluorine is laminated. -1
Japanese Patent No. 68161 describes a technique in which an amorphous material containing silicon atoms, carbon atoms, and 41 to 70 atomic% of hydrogen atoms as constituent elements is used as a surface layer.

Further, Japanese Patent Application Laid-Open No. Hei 6-242623 discloses that a hole trapping layer containing a Group 13 element of the periodic table is provided on a photoconductive layer of an amorphous silicon photoreceptor member to provide a negative charge. A technique for obtaining an electrophotographic light-receiving member has been disclosed.

Japanese Unexamined Patent Publication (Kokai) No. 6-273954 discloses a technique for an amorphous silicon photoreceptor for negative charging in which a surface layer contains a Group III element of the periodic table.

Japanese Patent Application Laid-Open No. 62-258466 discloses a digital high-speed continuous image system by making it possible to ignore the difference in the refractive index between the surface layer and the photosensitive layer and eliminate reflection of light at the interface. The technology for obtaining the electrophotographic light-receiving member is disclosed.

On the other hand, Japanese Patent Application Laid-Open No. 60-95551 discloses that in order to improve the image quality of an amorphous silicon photoreceptor member, the temperature near the surface of the photoreceptor member is maintained at 30 to 40.degree. A technique is disclosed in which an image forming process such as transfer is performed to prevent a reduction in surface resistance due to the adsorption of moisture on the surface of the light receiving member and an image deletion caused by the reduction.

[0011] These techniques have improved the electrical, optical, photoconductive properties and operating environment properties of the electrophotographic light-receiving member, and accordingly the image quality.

[0012]

SUMMARY OF THE INVENTION However, the conventional
An electrophotographic light-receiving member having a photoconductive layer composed of an a-Si-based material has dark resistance, photosensitivity, electrical responsiveness such as photoresponse, optical, photoconductive properties and use environment characteristics, Further, in terms of stability over time and durability, each of the characteristics is individually improved, but there is still room for further improvement in overall improvement of the characteristics.

In particular, the networking of offices has been progressing,
There is an increasing demand for mass output of digitized information.

Under these circumstances, there is a demand for an amorphous silicon photoreceptor for digital use regardless of whether it is positively charged or negatively charged.

When the conventional amorphous silicon photoreceptor for negative charging is used in a digital system, there is a problem that the following phenomenon occurs.

Lateral flow of charges occurs near the interface between the layer (surface charge injection blocking layer) provided independently to prevent charge injection from the surface and the photoconductive layer, and image deletion is observed. Occurred depending on the use conditions.

In a conventional amorphous silicon photoreceptor for a negative charging system in which an element for controlling electrical conductivity is contained in a surface layer to prevent charge injection from the surface, the surface layer is required. It is necessary to achieve both the role of a surface protective layer and the role of charge injection prevention.If the charge injection prevention is further improved to improve the chargeability, it is said that the image deletion and the hardness that is important as a surface protection layer are reduced. There was a problem.

Further, in a digital system using a laser or the like, the size of exposure dots has been reduced in order to improve image quality. Therefore, even in the conventional amorphous silicon photoreceptor for positive charging, image deletion is likely to occur, and it has become an important issue to obtain a photoreception member free of image deletion.

In the case of the amorphous silicon photoreceptor for a negative charging system, in order to meet the demand for full-color output using a color developer for negative charging, measures against image deletion in a high quality digital system have become an important issue. .

Although analog light did not appear on the image at the exposure layer interface, the coherent light was used as a light source in the case of digital light. In some cases, reflection was observed on an image as interference fringes.

For this reason, when a surface charge injection blocking layer is provided between the photoconductive layer and the surface layer in the conventional amorphous silicon photoreceptor for negative charging, the charging ability at the time of negative charging has been improved. Without using this independent surface charge injection blocking layer,
There is a need to improve the charging ability.

Further, in order to cope with miniaturization and mass output of the electrophotographic apparatus, it is necessary to further improve the charging ability and sensitivity of the amorphous silicon photoreceptor for the negative charging system.

Accordingly, an object of the present invention is to provide an amorphous silicon electrophotograph in which no image deletion occurs, the charging ability and sensitivity during negative charging are improved, and interference fringes are not observed even in a system using coherent light. It is an object of the present invention to provide a light receiving member for use and an electrophotographic apparatus. Such a light receiving member can be suitably used for a digital system.

[0024]

In order to solve the above-mentioned problems, attention is paid to the behavior of negative charges in the surface layer, and the content ratio of silicon atoms to carbon atoms and the thirteenth periodic table for controlling electric conductivity are controlled. As a result of intensive studies on the relationship between the content and distribution of elements of the group III and the charging ability and image quality, a region in which the content ratio of silicon atoms and carbon atoms changes was provided, and the periodic table 1
It has been found that the above object can be achieved by setting the Group 3 element in a specific distribution state in the region.

That is, in a photoreceptor member having a photoconductive layer and a surface layer composed of a non-single-crystal material and having a silicon atom as a base, a layered surface region is connected to the surface layer, and the surface region is connected to the photoconductive layer. By providing a layered connection area and controlling the electrical conductivity in the connection area, not only does the photoreceptor member for negative charging exhibit remarkably excellent characteristics in practical use, but also interference occurs even when coherent light is used for digital use. It was found that the pattern did not appear on the image and had excellent characteristics in image quality, sensitivity and the like.

The present invention provides a light receiving member and an electrophotographic apparatus having the following features.

That is, according to the present invention, there is provided an electrophotographic method in which at least a photoconductive layer and a surface layer are sequentially laminated on a conductive support, and the photoconductive layer and the surface layer are made of an amorphous material containing silicon atoms. In the light receiving member for use, the surface layer has a layered surface region, and a layered connection region connecting the surface region and the photoconductive layer, wherein the connection region is composed of silicon atoms, carbon atoms and at least one type of carbon atom. It contains a Group 13 atom of the periodic table, and the content of the Group 13 atom in the connection region increases from the photoconductive layer side interface and is distributed so as to have a maximum value in the thickness direction of the connection region. This is a light receiving member for electrophotography.

In the above light receiving member for electrophotography,
It is preferable that the maximum value of the content of the group III atom is in a region on the side closer to the surface region than one third of the thickness of the connection region from the interface of the photoconductive layer.

It is also preferable that the content ratio of silicon atoms to carbon atoms in the connection region changes in the thickness direction.

Further, silicon atoms in the connection region,
It is preferable that the contents of the carbon atoms and the group 13 atoms be distributed so as to connect the connection region side end of the photoconductive layer and the connection region side end of the surface region with a continuous change. Here, that the atomic content is distributed so as to connect the connection region side end of the photoconductive layer and the connection region side end of the surface region in a continuous change means that the silicon atoms are contained therein as a base. a continuity of the content of the constituent atoms, for example, the ratio of carbon atom content to silicon atom content in the connecting region end of the photoconductive layer and X _1, connection region in contact with the connection region side end of the photoconductive layer The ratio of the carbon atom content to the silicon atom content at the photoconductive layer side end of the connection region is X ₂ , the ratio of the carbon atom content to the silicon atom content at the surface region side end of the connection region is X ₃ , X ₁ = X ₂ , X ₃ = X ₄ , and X ₂ , where X ₄ is the ratio of the carbon atom content to the silicon atom content at the connection region side end of the surface region in contact with the surface region side end of including in between and the X ₃ It means that the ratio of the amount is continuous.

The content of silicon atoms and carbon atoms in the connection region is determined by the ratio (C / C) of the carbon atom weight (C) to the sum of the silicon atom weight and the carbon atom weight (Si + C).
It is preferable that (Si + C)) is distributed so as to be minimum at the end of the connection region on the photoconductive layer side and maximum at the end of the connection region on the side of the surface layer region.

Further, the thickness of the connection region is 0.05 μm.
The maximum value is preferably from 0.5 to 0.5 μm, and the maximum value is preferably from 100 to 10,000 ppm. In this specification, ppm is based on the number of atoms unless otherwise specified.

In the present invention, the photoconductive layer may be provided directly on the support, or may be provided indirectly on the support via another layer such as a charge injection blocking layer. .

Further, the present invention is an electrophotographic apparatus provided with the above-mentioned electrophotographic light-receiving member and performing image exposure with coherent light having a wavelength of 500 nm or more and 800 nm or less. The above electrophotographic light receiving member can be suitably used as a negatively charged electrophotographic light receiving member used in a color electrophotographic apparatus. 2. Description of the Related Art Conventionally, in a color electrophotographic apparatus, a negatively charged electrophotographic light receiving member has been used due to restrictions on the production of the color toner. However, the conventional amorphous silicon-based electrophotographic light receiving member for negative charging required an upper blocking layer having a steep interface between the surface layer and the photoconductive layer. For this reason, especially in an electrophotographic apparatus using coherent light of 500 to 800 nm, it is necessary to take measures against interference of incident light, and there are restrictions on various characteristics. However, the electrophotographic light-receiving member of the present invention provides the above-described blocking ability to a part of the surface layer, and continuously connects the composition ratio of the atoms constituting the surface layer from the photoconductive layer, so that the color digital Good characteristics can be exhibited in an electrophotographic apparatus in which coherent light having an image exposure of 500 to 800 nm represented by a photographic apparatus is used and the surface of the light receiving member is negatively charged.

The surface layer functions as a charge blocking layer for preventing charge injection from the surface portion of the photoconductive layer into the interior during charging, and also serves as oxygen, water vapor, moisture in the air, ozone (O _3). ) Can serve as a surface protective layer that prevents molecular species generally present in an environmental atmosphere from directly contacting or adsorbing to the surface of the photoconductive layer.

At the same time, the surface layer serves as a surface protective layer for preventing the properties of the photoconductive layer itself from being destroyed by the action of external factors such as the application of stress or the attachment of reactive chemicals. Therefore, it is formed of an amorphous material mainly containing silicon atoms.

The present inventors have proposed a method of improving the chargeability at the time of negative charging without using the surface charge injection blocking layer, and to improve the ability to prevent charge injection from the surface, the periodic table on the surface layer has to be improved. Investigations were made on the content of Group 13 elements. However, in the surface layer having a high carbon content, it was not possible to obtain an improvement in injection inhibiting ability and an improvement in charging ability.

Therefore, the role of the surface protective layer is assigned to the outermost surface region of the surface layer, and the role of preventing charge injection is performed in a portion other than the surface region.

Then, in order to achieve both improvement in the ability to prevent image deletion and the ability to prevent charge injection, the region containing the Group 13 element of the periodic table was examined in detail, and the surface region of the surface layer and the photoconductive layer were compared. It has been found that the inclusion of a Group 13 element in the periodic table in the connection region to be connected is effective in improving the charging ability.

Further, when the content and distribution of Group 13 elements of the periodic table in the connection region were examined in detail, it was found that a large amount of Group 13 elements of the periodic table were contained near the interface of the photoconductive layer in the connection region. Since the dark resistance at the interface between the photoconductive layer and the connection region is reduced, image deletion sometimes occurs.

However, by including a Group 13 element in the periodic table in the surface layer side region rather than near the interface of the photoconductive layer in the connection region, it is possible to achieve both a prevention of image deletion and an improvement in charging performance. The inventors have found that a member can be obtained, and have completed the present invention.

[0042]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a light receiving member of the present invention will be described in detail with reference to the drawings.

FIG. 2 is a schematic diagram for explaining the layer structure of the light receiving member of the present invention.

In the light receiving member 200 shown in FIG. 2, a light receiving layer 202 is provided on a support 201 for a light receiving member. The light receiving layer 202 includes an amorphous silicon-based charge injection blocking layer 205 in order from the support 201 side,
It is composed of a photoconductive layer 203 made of a non-single crystal material having silicon atoms as a base material and having photoconductivity, and an amorphous silicon-based surface layer 204. Here, the photoconductive layer 203 is indirectly provided on the support via the charge injection blocking layer 205,
Although the surface layer 204 is sequentially stacked, the charge injection blocking layer 205 may not be provided. In this case, another embodiment of the present invention in which a photoconductive layer and a surface layer are sequentially stacked directly on a support is provided.

<Support> The support used in the present invention may be either conductive or electrically insulating. As the conductive support, Al, Cr, Mo, Au, In,
Metals such as Nb, Te, V, Ti, Pt, Pd, Fe,
And alloys containing these, such as stainless steel. Also, at least the surface of the electrically insulating support such as a film or sheet of a synthetic resin such as polyester, polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polystyrene, polyamide, etc., at least on the side on which the light-receiving layer is formed, such as a glass or ceramic. Can be used.

The support 201 used in the present invention may have a cylindrical or endless belt shape with a smooth surface or an uneven surface, and the thickness may be such that the light receiving member 200 can be formed as desired. However, when flexibility as the light receiving member 200 is required, the thickness can be made as thin as possible within a range where the function as the support 201 can be sufficiently exhibited. However, the support 2
01 is usually 10 μm or more in terms of production, handling, mechanical strength and the like.

<Photoconductive layer> In the present invention, in order to effectively achieve the object, the photoconductive layer is formed on a support 201,
The photoconductive layer 203 constituting a part of the light receiving layer 202 is formed by a vacuum deposition film forming method by appropriately setting numerical conditions of film forming parameters so as to obtain desired characteristics. Specifically, for example, a glow discharge method (low-frequency CVD
, An AC discharge CVD method such as a high-frequency CVD method or a microwave CVD method, or a thin film deposition method such as a DC discharge CVD method. The glow discharge method, particularly the high-frequency glow discharge method using a power frequency in the RF band, is preferable because the conditions for manufacturing the light receiving member having the desired characteristics can be relatively easily controlled.

In order to form the photoconductive layer 203 by the glow discharge method, a source gas for supplying Si that can supply silicon atoms (Si) and a H gas that can supply hydrogen atoms (H) are basically used. A source gas for supplying X and / or a source gas for X that can supply a halogen atom (X) in a desired gas state into a reaction vessel capable of reducing the pressure inside, and glow discharge is performed in the reaction vessel. It is made of a non-single-crystal material (a-Si: H, X) containing a silicon atom as a base and containing a hydrogen atom and / or a halogen atom on a predetermined support 201 previously set at a predetermined position. A layer may be formed.

Here, in order to compensate for the dangling bonds of silicon atoms and to improve the layer quality, especially the photoconductivity and the charge retention characteristics, hydrogen atoms and / or halogen atoms are contained in the photoconductive layer 203. It is preferable to include them.
The content of the hydrogen atom or the halogen atom or the sum of the hydrogen atom and the halogen atom is desirably 10 to 40 atomic% based on the sum of the silicon atom and the hydrogen atom and / or the halogen atom.

Substances that can be used as the Si supply gas include Si
Silicon hydrides (silanes) in a gas state such as H ₄ , Si ₂ H ₆ , Si ₃ H ₈ , and Si ₄ H ₁₀ or gasifiable silicon hydrides (silanes) are effectively used. Easy handling, Si
SiH ₄ and Si ₂ H ₆ are mentioned as preferable in terms of the supply efficiency and the like.

Then, in order to structurally introduce hydrogen atoms into the formed photoconductive layer 203 and to make it easier to control the introduction ratio of hydrogen atoms, these gases are further added with H ₂ and / or H _2. Alternatively, it is preferable to mix a desired amount of He or a silicon compound gas containing a hydrogen atom to form a layer. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

Examples of the effective source gas for supplying a halogen atom include a gaseous or gasizable halogen compound such as a halogen gas, a halide, an interhalogen compound containing halogen, and a silane derivative substituted with halogen. Can be Further, a gaseous or gasifiable silicon hydride compound containing a halogen atom, which contains a silicon atom and a halogen atom as constituent elements, can also be mentioned as an effective compound. Specific examples of the halogen compound that can be preferably used include fluorine gas (F ₂ ),
Inter-halogen compounds such as BrF, ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₃ and IF ₇ can be mentioned. As a silicon compound containing a halogen atom, that is, a silane derivative substituted with a so-called halogen atom, specifically, for example, silicon fluoride such as SiF ₄ or Si ₂ F ₆ can be preferably mentioned.

In order to control the amount of hydrogen atoms and / or halogen atoms contained in the photoconductive layer 203, for example, the temperature of the support 201, a raw material used to contain hydrogen atoms and / or halogen atoms, What is necessary is just to control the amount of the substance introduced into the reaction vessel, the discharge power and the like.

In the present invention, atoms for controlling electric conductivity can be introduced into the photoconductive layer 203, and the atoms may be distributed.

As the atoms that can be used in the photoconductive layer to control electric conductivity, there can be mentioned so-called impurities in the field of semiconductors, and atoms belonging to Group 13 of the periodic table that provide p-type conductivity (hereinafter referred to as “atoms”). Group 13 atom "
May be used. In addition, atoms belonging to Group 15 of the periodic table that provide n-type conduction characteristics (hereinafter referred to as “
Abbreviated as "group atom").

Specific examples of Group 13 atoms include boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl). In particular, B, Al, G
a is preferred.

Specific examples of Group 15 atoms include phosphorus (P), arsenic (As), and antimony (Sb).
Particularly, P and As are preferable.

The content of atoms for controlling the electric conductivity contained in the photoconductive layer 203 is preferably 5 × 10 ^−3.
５０50 ppm, more preferably 1 × 10 ^-2 -30 pp
m, optimally between 5 × 10 ^{-2 and} 20 ppm, it is desirable to select the maximum content and the minimum content as appropriate and change the distribution.

An atom for controlling electric conductivity, for example,
In order to introduce the group 3 atoms structurally, the first
The raw material for introducing the group 3 atoms is introduced into the reaction vessel in a gaseous state.
It may be introduced together with another gas for forming the photoconductive layer 203. It is desirable that a material that can be a raw material for introducing a group 13 atom be a gaseous material at normal temperature and normal pressure or a material that can be easily gasified at least under layer forming conditions.

As such a raw material for introducing a group 13 atom, specifically, for introducing a boron atom, B ₂ H ₆ , B ₄
Include _{H 10, B 5 H 9,} B 5 H 11, B 6 H 10, B 6 H 12, B 6 H 14 borohydride such as, BF _3, BCl _3, BBr boron halides such as ₃ . Other examples include AlCl ₃ , GaCl ₃ , Ga (CH ₃ ) ₃ , InCl ₃ , and TlCl ₃ .

Further, these raw materials for introducing atoms for controlling electric conductivity may be replaced with H ₂ and / or He, if necessary.
May be used after dilution.

Further, in the present invention, the photoconductive layer 203
It is also effective to include a carbon atom, an oxygen atom and / or a nitrogen atom. The content of carbon atoms, oxygen atoms and / or nitrogen atoms is preferably 1 × 10 3 based on the sum of silicon atoms, carbon atoms, oxygen atoms and nitrogen atoms.
^-5 to 10 atomic%, more preferably 1 × 10 ^-4 to 8 atomic%,
Optimally, 1 × 10 ^{−3 to} 5 atomic% is desirable.

When two or more carbon atoms, oxygen atoms, and nitrogen atoms are contained, the sum of the contents of the plurality of atoms is more than the sum of the silicon atoms, carbon atoms, oxygen atoms, and nitrogen atoms. The above content range, preferably 1 ×
It is desirable that the concentration is 10 ^-5 to 10 atomic%, more preferably 1 × 10 ^-4 to 8 atomic%, and most preferably 1 × 10 ^{-3 to} 5 atomic%.

The carbon atoms, oxygen atoms and / or nitrogen atoms may be uniformly contained in the photoconductive layer, or may be non-uniform such that the content changes in the thickness direction of the photoconductive layer. There may be a portion having a distribution.

In the present invention, the thickness of the photoconductive layer 203 is appropriately determined as desired from the viewpoint of obtaining desired electrophotographic characteristics and economic effects, and is preferably 2 or more.
It is desirable that the thickness be 0 to 50 μm, more preferably 23 to 45 μm, and most preferably 25 to 40 μm. 20μ layer thickness
When the thickness is less than m, it is disadvantageous from the viewpoint of electrophotographic characteristics such as charging ability and sensitivity. When the thickness is more than 50 μm, the production time of the photoconductive layer becomes longer and the production cost becomes higher.

In order to form the photoconductive layer 203 having desired film properties, the mixing ratio of the gas for supplying Si and the diluent gas, the gas pressure in the reaction vessel, the discharge power, and the temperature of the support are appropriately set. good.

Similarly, an optimum range of the gas pressure in the reaction vessel is appropriately selected according to the layer design.
× 10 ^{-2 to} 5.0 × 10 ⁴ Pa, preferably 5.0 × 10 ^-2
~ 1.0 × 10 ⁴ Pa, optimally 1.0 × 10 ^{-1 to} 5.0 × 1
It is desirable to set it to 0 ³ Pa.

Similarly, the optimum range of the discharge power is appropriately selected according to the layer design. The ratio of the discharge power to the flow rate of the gas for supplying Si is preferably 0.3 to 8, more preferably 0.8. ~ 7, optimally 1 ~ 6W · min / mL
(Normal).

Further, the support 2 for forming the photoconductive layer
The temperature of 01 is appropriately selected in an optimum range according to the layer design, but is usually preferably 200 to 350 ° C.
More preferably 230-330 ° C, optimally 250-3.
It is desirable that the temperature be 10 ° C.

In the present invention, the preferable ranges of the temperature of the support and the gas pressure for forming the photoconductive layer include the above-mentioned ranges, but the conditions are not usually determined independently and separately. It is desirable to determine optimal values based on mutual and organic relationships to form a light-receiving member having desired properties.

<Surface Layer> In the present invention, it is necessary to further form an amorphous silicon-based surface layer 204 on the photoconductive layer 203 formed on the support 201 as described above. The surface layer 204 has a free surface 206, and achieves the object of the present invention in moisture resistance, continuous repetitive use characteristics, electric pressure resistance, use environment characteristics, durability, prevention of charge injection from the surface, and improvement of image quality. Provided for. In the present invention, the surface layer 204
Is composed of a connection region 207 and a surface region 208. In the present invention, the photoconductive layer 2 constituting the light receiving layer 202
03 and each of the amorphous materials forming the connection region 207 have a common component of silicon atoms,
In the connection region 207, chemical stability is sufficiently ensured.

For the surface layer 204, any material can be used as long as it is an amorphous material containing silicon. In particular, a material containing a-SiC as a main component is preferable. For example, hydrogen atoms (H) and / or Or amorphous silicon containing a halogen atom (X) and further containing a carbon atom (hereinafter referred to as “a-SiC: H, X”) or containing a hydrogen atom (H) and / or a halogen atom (X). Materials such as amorphous carbon containing silicon atoms mainly containing carbon atoms (hereinafter referred to as “aC: Si: H, X”) are preferably used.

The surface layer 204 can be manufactured by appropriately setting numerical conditions of film forming parameters so as to obtain desired characteristics by a vacuum deposited film forming method. Specifically, it can be formed by a thin film deposition method such as a glow discharge method (an AC discharge CVD method such as a low frequency CVD method, a high frequency CVD method or a microwave CVD method, or a DC discharge CVD method). The glow discharge method, particularly the high-frequency glow discharge method using a power frequency in the RF band, is suitable because it is relatively easy to control the conditions for manufacturing a light receiving member having desired characteristics.

For example, a-SiC: H,
In order to form the surface layer 204 made of X, basically, a source gas for supplying Si capable of supplying silicon atoms (Si),
A source gas for supplying C that can supply carbon atoms (C), a source gas for supplying H that can supply hydrogen atoms (H), and / or a source gas for supplying X that can supply halogen atoms (X) Is introduced in a desired gas state into a reaction vessel capable of reducing the pressure inside, a glow discharge is generated in the reaction vessel, and the photoconductive layer 203 previously placed at a predetermined position is formed on the support 201. Then, a layer made of a-SiC: H, X may be formed.

The substance that can be a gas for supplying silicon (Si) used in forming the surface layer of the present invention includes Si
Silicon hydrides (silanes) in a gas state such as H ₄ , Si ₂ H ₆ , Si ₃ H ₈ , and Si ₄ H ₁₀ or gasifiable silicon hydrides (silanes) are effectively used. Easy handling, Si
SiH ₄ and Si ₂ H ₆ are preferred in terms of good supply efficiency and the like. Further, these raw material gases for supplying Si may be diluted with a gas such as H ₂ , He, Ar, Ne or the like as necessary.

Substances that can serve as a carbon supply gas include:
CH_Four, C_TwoH_Two, C_TwoH₆, C_ThreeH₈, C_FourH_TenEtc. in gaseous state, or
Gasifiable hydrocarbons are listed as being effectively used.
In addition to ease of handling during layer production and Si supply efficiency.
CH in terms of goodness etc._Four, C_TwoH_Two, C_TwoH ₆Are preferred
I can do it. In addition, these source gases for C supply are required.
H accordingly_Two, He, Ar, Ne, etc.
Is also good.

In order to make it easier to control the introduction ratio of hydrogen atoms introduced into the surface layer 204 to be formed, these gases may further be hydrogen gas or silicon compound gas containing hydrogen atoms. Also, it is preferable to form a layer by mixing desired amounts. Further, each gas is not limited to a single species, and a plurality of species may be mixed at a predetermined mixture ratio.

As the effective source gas for supplying a halogen atom, a gaseous or gasifiable halogen compound such as a halogen gas, a halide, an interhalogen compound containing halogen, a silane derivative substituted with halogen, and the like are preferably mentioned. . Further, a gaseous or gasifiable silicon hydride compound containing a halogen atom, which contains a silicon atom and a halogen atom as constituent elements, can also be mentioned as an effective compound. Specific examples of the halogen compound that can be suitably used in the present invention include interhalogen compounds such as fluorine gas (F ₂ ), BrF, ClF, ClF ₃ , BrF ₃ , BrF ₅ , IF ₃ and IF _7. Can be. Specific examples of the silicon compound containing a halogen atom, that is, a silane derivative substituted with a halogen atom, include, for example, SiF ₄ , Si ₂ F ₆
And the like are preferred.

In order to control the amount of hydrogen atoms and / or halogen atoms contained in the surface layer 204, for example, the temperature of the support 201, a raw material used to contain hydrogen atoms and / or halogen atoms The amount to be introduced into the reaction vessel, the discharge power and the like may be controlled.

The thickness of the surface layer 204 in the present invention is usually 0.1 to 3 μm, preferably 0.15 to 2 μm, and most preferably 0.2 to 1 μm. If the thickness is less than 0.1 μm, the surface region 208 may be lost due to abrasion or the like during use of the light receiving member, which is disadvantageous. This is disadvantageous because the photographic characteristics may be reduced.

The surface layer 204 according to the present invention is carefully formed so that its required properties are provided as desired. In other words, a substance containing Si, C, H and / or X as a constituent element is structurally from crystalline to amorphous depending on its forming conditions, and is electrically physical to conductive to semiconductive and insulating. In the present invention, the properties between the photoconductive properties and the non-photoconductive properties are shown. The formation conditions are selected according to the following.

In order to form the surface layer 204 having characteristics capable of achieving the object of the present invention, the temperature of the support 201 and the gas pressure in the reaction vessel are appropriately set as desired.

The temperature (Ts) of the support 201 at the time of forming the surface layer is appropriately selected in an optimum range according to the layer design, but is usually preferably 200 to 350 ° C., more preferably 230 to 350 ° C. 330 ° C, optimally 250-31
Desirably, it is 0 ° C.

The optimum gas pressure in the reaction vessel is also appropriately selected in accordance with the layer design, but in the usual case, preferably 1.0 × 10 ^{−2 to} 1.0 × 10 ³ Pa, more preferably ^{5.0 × 10 -2 ~5.0 × 10 2} Pa, and optimally 1.0 × 1
It is preferably from 0 ^{-1 to} 1.0 × 10 ² Pa.

Similarly, the optimum range of the discharge power is also appropriately selected according to the layer design. However, the carbon content of the surface region is preferably larger than the carbon content of the photoconductive layer. Region 2 with a small amount of gas for supplying carbon atoms in order to connect with a continuous change in the composition ratio of constituent atoms
On the photoconductive layer side of No. 07, the discharge power is the same as or the same as the discharge power of the photoconductive layer, and the ratio of the discharge power to the flow rate of the gas for supplying Si is usually 0.5 to 10 ,
It is desirable to set the value in the range of preferably 0.8 to 8, and most preferably 1 to 6. It is desirable that the surface region 208 is also set appropriately within the above range.

In the present invention, the preferable ranges of the temperature of the support, the gas pressure, and the discharge power for forming the surface layer include the above-mentioned ranges, but the conditions are usually not independently determined separately. Instead, it is desirable to determine the optimum value based on mutual and organic relationships to form a light receiving member having desired properties.

<< Surface Area >> In the surface area 208,
The carbon content is 3 with respect to the sum of silicon atoms and carbon atoms.
A range from 0% to 98% is preferred.

In the present invention, in the surface region 208, dangling bonds of silicon atoms are compensated to improve the layer quality,
In particular, it is preferable to contain a hydrogen atom and / or a halogen atom in order to improve the photoconductive property and the charge retention property. In general, the hydrogen content is desirably 30 to 70 atomic%, preferably 35 to 65 atomic%, and most preferably 40 to 60 atomic%, based on the total amount of the constituent atoms. In addition, the content of the halogen atom is usually 0.1.
It is desirable that the content be 01 to 15 atomic%, preferably 0.1 to 10 atomic%, and most preferably 0.6 to 4 atomic%.

It is known that defects (mainly dangling bonds of silicon atoms and carbon atoms) existing in the surface layer have an adverse effect on the characteristics as a light receiving member for electrophotography. For example, deterioration of charging characteristics due to injection of charges from the free surface, fluctuations in charging characteristics due to changes in the surface structure under the use environment, for example, high humidity, and furthermore, charge is applied to the surface layer from the photoconductive layer during corona charging or light irradiation. Is implanted and charges are trapped in defects in the surface layer, thereby causing an afterimage phenomenon at the time of repeated use, and the like.

However, by controlling the hydrogen content in the surface region 208 to 30 atomic% or more, defects in the surface region 208 are reduced, and as a result, the electrical characteristics and the high-speed continuous usability can be improved. Yes, it is.

On the other hand, if the hydrogen content in the surface region 208 exceeds 70 atomic%, the hardness of the surface region 208 decreases, which is disadvantageous from the viewpoint of resistance to repeated use. The hydrogen content in the surface region 208 can be controlled by the conditions at the time of forming the layer, for example, the flow rate (ratio) of the raw material gas, the support temperature, the discharge power, the gas pressure, and the like.

By controlling the halogen content in surface region 208 to 0.01 atomic% or more, it is possible to more effectively achieve the bond between silicon atoms and carbon atoms in surface region 208. It becomes possible. Further, as a function of the halogen atoms in the surface region 208, it is possible to effectively prevent the bond between the silicon atom and the carbon atom from being broken due to damage such as corona.

On the other hand, if the halogen content in the surface region 208 exceeds 15 atomic%, the effect of the bond between the silicon atom and the carbon atom in the surface region 208 and the bond between the silicon atom and the carbon atom due to damages such as corona and the like may occur. The effect of preventing cutting is reduced. Furthermore, since the excess halogen atoms hinder the mobility of carriers in the surface region 208, residual potential and image memory are observed. Surface area 20
Like the hydrogen content, the halogen content in 8 can be controlled by the conditions at the time of layer formation, for example, the flow rate (ratio) of the raw material gas, the support temperature, the discharge power, the gas pressure, and the like.

In order to control the amount of hydrogen atoms and / or halogen atoms contained in the surface region 208, for example, the temperature of the support 201, a raw material used to contain hydrogen atoms and / or halogen atoms The amount to be introduced into the reaction vessel, the discharge power and the like may be controlled.

The carbon atoms may be evenly and uniformly contained in the surface region 208, or there may be portions in the surface region 208 having a non-uniform distribution such that the content changes in the thickness direction. You may.

<< Connecting Region >> In order to exhibit the effects of the present invention, the connecting region 207 is formed so as to continuously connect the distribution of the constituent atom content of the photoconductive layer 203 and the surface region 208 and the film structure. It is particularly preferred to design.

In connection region 207, the content of carbon atoms is 30 atomic% with respect to the sum of silicon atoms and carbon atoms.
To 98 at%.

In particular, the photoconductive layer 203 and the surface layer region 208
It is particularly preferable to distribute the carbon content in such that they are continuously connected.

Furthermore, it is preferable that the carbon atom content of the connection region 207 is distributed so as to be smaller than that of the surface layer region 208.

It is necessary to distribute and contain Group 13 atoms as atoms controlling electric conductivity in the connection region. In order to obtain the effect of the present invention, it is necessary to contain the group 13 atoms in a state of being distributed in the connection region 207 connecting the photoconductive layer 203 and the surface region 208 of the surface layer 204.

For this purpose, a gas for supplying silicon atoms and a gas for supplying carbon atoms used in the photoconductive layer, the first gas in the periodic table,
By continuously changing the gas flow rate of the supply gas for the atoms belonging to Group 3, silicon atoms, carbon atoms, and the first of the periodic table
It is preferable that the content of atoms belonging to Group 3 be changed continuously.

Further, the content of atoms belonging to Group 13 of the periodic table must be changed so that the maximum value is obtained in the surface layer side region of the connection region 207 near the photoconductive layer interface. The content of atoms belonging to Group 13 of the periodic table is
It is particularly preferable to design the layer such that the thickness of the connection region 207 takes a maximum value on the side of the photoconductive layer from the side of the photoconductive layer 208 on the side of the surface region 208 to obtain the effect of the present invention.

The content of atoms belonging to Group 13 of the periodic table does not have to be contained in the surface region 208, and when it is contained, it should be the minimum value in the surface region 208 on the free surface 206 side. Is preferable.

The layer thickness of the connection region 207 is determined by comprehensively judging the required electrophotographic characteristics, but is preferably 0.05 or more and 0.5 μm or less.

Further, the maximum value of the content of atoms belonging to Group 13 of the periodic table in the connection region 207 is also determined by comprehensively judging the charge injection blocking ability and image quality. It is preferable to set the following.

When the maximum value of the content is 100 ppm or less, the p-type conductivity may be insufficient to control the charge, and the effect of improving the ability to prevent charge injection from the surface may be improved. Disadvantage.

If the maximum content is 10000 ppm or more, the total content of the connection region 207 and the surface region 208 increases, which is disadvantageous in that image deletion is likely to occur.

Specific examples of Group 13 atoms include boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl). In particular, B, Al, Ga
Is preferred.

In the connection region, atoms for controlling electric conductivity,
In order to introduce a group 13 atom structurally, at the time of layer formation,
A raw material for introducing Group 13 atoms may be introduced in a gaseous state into the reaction vessel together with another gas for forming the connection region 207 and the surface region 208. It is desirable that a material that can be a raw material for introducing a group 13 atom be a gaseous material at normal temperature and normal pressure or a material that can be easily gasified at least under layer forming conditions. As such a raw material for introducing a group 13 atom, specifically, for introducing a boron atom, B ₂ H ₆ , B ₄ H ₁₀ , B ₅ H ₉ , B ₅ H ₁₁ , B ₆ H
_{10, B 6 H 12, B} 6 H 1 4 borohydride such _{as, BF 3, BCl 3, BBr} 3 boron halides, etc., and the like. In addition, AlCl ₃ , GaC
l ₃ , Ga (CH ₃ ) ₃ , InCl ₃ , TlCl _{3 and the} like can also be mentioned.

Further, these raw materials for introducing atoms for controlling electric conductivity may be diluted with a gas such as H ₂ , He, Ar, Ne or the like as necessary.

In the connection region 207 of the present invention, as in the surface region, hydrogen atoms or hydrogen atoms are added to compensate for dangling bonds of silicon atoms and improve the layer quality, particularly, the photoconductive characteristics and the charge retention characteristics. And / or a halogen atom. The hydrogen content is usually 30 to 70 atomic%, preferably 35 to 70 atomic%, based on the total amount of the constituent atoms.
It is desirably about 65 to 65 atomic%, optimally 40 to 60 atomic%. The content of halogen atoms is usually 0.01 to 15 atomic%, preferably 0.1 to 10 atomic%, and most preferably 0.6 to 4 atomic%.

That is, it is known that defects (mainly dangling bonds of silicon atoms and carbon atoms) existing in the surface layer have an adverse effect on the characteristics as a light receiving member for electrophotography. For example, deterioration of charging characteristics due to injection of charges from the free surface, fluctuations in charging characteristics due to changes in the surface structure under the use environment, for example, high humidity, and furthermore, charge is applied to the surface layer from the photoconductive layer during corona charging or light irradiation. Is implanted and charges are trapped in defects in the surface layer, thereby causing an afterimage phenomenon at the time of repeated use, and the like.

However, by controlling the hydrogen content in the connection region 207 to 30 atomic% or more, defects in the connection region 207 are reduced, and as a result, the electrical characteristics and the high-speed continuous usability can be improved. Yes, it is.

The hydrogen content in the connection region 207 depends on the conditions at the time of forming the layer, for example, the flow rate (ratio) of the source gas, the temperature of the support,
It can be controlled by the discharge power, gas pressure and the like.

Further, by controlling the halogen content in connection region 207 to a range of 0.01 atomic% or more, it is possible to more effectively achieve the generation of the bond between silicon atoms and carbon atoms in connection region 207. It becomes possible. Further, as a function of the halogen atoms in the connection region 207, it is possible to effectively prevent the bond between the silicon atom and the carbon atom from being broken due to damage such as corona.

The halogen content in the connection region 207 can be controlled by the conditions at the time of layer formation, for example, the flow rate (ratio) of the raw material gas, the support temperature, the discharge power, the gas pressure, and the like, similarly to the hydrogen content.

In order to control the amount of hydrogen atoms and / or halogen atoms contained in the connection region 207, for example, the temperature of the support 201, a raw material used to contain hydrogen atoms and / or halogen atoms, etc. The amount to be introduced into the reaction vessel, the discharge power and the like may be controlled.

In the present invention, the thickness of the connection region 207 in the surface layer 204 is desirably 0.05 to 0.5 μm.

If the thickness is less than 0.05 μm, the exposure is reflected at the interface with the photoconductive layer, and light interference may be observed. If the thickness is more than 0.5 μm, the sensitivity may decrease. This is disadvantageous because a decrease in electrophotographic characteristics such as an increase in residual potential is observed.

Further, the connection region 20 for connecting the surface layer 204 and the photoconductive layer 203 by changing the composition ratio of the constituent atoms continuously.
7, the adhesion between the surface region 208 and the photoconductive layer 203 is improved, the movement of the photocarrier to the surface becomes smooth, and the influence of interference due to light reflection at the interface between the photoconductive layer and the surface region 208 is substantially reduced. Can be eliminated.

<Charge Injection Blocking Layer> In the photoreceptor member of the present invention, a charge injection blocking layer having a function of blocking charge injection from the conductive support side is provided between the conductive support and the photoconductive layer. It is more effective to provide. That is, the charge injection blocking layer has a function of preventing charge from being injected from the support side to the photoconductive layer side when the photoreceptive layer is subjected to a charging treatment of a fixed polarity on its free surface. Such a function is not exhibited when it is subjected to a polarity charging process, which is a so-called polarity dependency. In order to provide such a function, it is preferable that the charge injection blocking layer contains a relatively large number of atoms for controlling electric conductivity as compared with the photoconductive layer.

The atoms for controlling the electric conductivity contained in the charge injection blocking layer may be uniformly distributed in the layer, or may be uniformly distributed in the in-plane direction. In addition, there may be a portion that is contained in a state of being unevenly distributed in the layer thickness direction. When the distribution concentration is non-uniform in the layer thickness direction, it is preferable that the compound be contained so as to be distributed more on the support side.

However, in any case, it is preferable that the compound is uniformly contained in the in-plane direction parallel to the surface of the support from the viewpoint of making the characteristics in the in-plane direction uniform.

Examples of atoms contained in the charge injection blocking layer for controlling electric conductivity include so-called impurities in the field of semiconductors, and include atoms belonging to Group 15 of the periodic table that provide n-type conductivity (hereinafter referred to as "atoms"). (Abbreviated as “Group 15 atom”) can be used.

Examples of Group 15 atoms include phosphorus (P), arsenic (As), antimony (Sb), bismuth (B
i) and the like, and P and As are particularly preferred.

In the present invention, the compound contained in the charge injection blocking layer
The content of atoms that control the electrical conductivity
As desired so that the purpose of Ming can be effectively achieved
It is determined appropriately, but preferably 10 to 1 × 10^Fourppm,
More preferably, 50 to 5 × 10 ^Threeppm, optimally 1 × 1
0^Two~ 3 × 10^ThreeIt is desirably set to ppm.

Further, carbon atoms,
By containing at least one of a nitrogen atom and an oxygen atom, the adhesion between the charge injection blocking layer and the support can be further improved.

The carbon atoms, nitrogen atoms or oxygen atoms contained in the charge injection blocking layer may be uniformly distributed in the layer, or may be contained evenly in the in-plane direction. However, there may be a portion which is contained in a state of being unevenly distributed in the layer thickness direction. However, in any case, it is preferable that a uniform distribution be contained evenly in the in-plane direction parallel to the surface of the support from the viewpoint of making the characteristics in the in-plane direction uniform.

The content of carbon atoms, nitrogen atoms and / or oxygen atoms contained in the entire region of the charge injection blocking layer is determined as appropriate, but if one kind is used, the content is used if two or more kinds are used. The total is preferably 1 × 10 ⁻³ to 30 atomic%, more preferably 5 × 10 ^{−3 to} 20 atomic%, and most preferably 1 × 10 ⁻² to 10 atomic%.

Further, hydrogen atoms and / or
Alternatively, when a halogen atom is contained, dangling bonds existing in the layer are compensated for, which is effective in improving the film quality. The content of hydrogen atoms or halogen atoms in the charge injection blocking layer, or when both hydrogen atoms and halogen atoms are contained, the total content is preferably 1 to 50 atomic%, more preferably 5 to 50 atomic%. Desirably, it is set to 40 at%, and most preferably, 10１０〜30 at%.

In the present invention, the thickness of the charge injection blocking layer is preferably from 0.1 to 5 μm, more preferably from 0.3 to 4 μm, from the viewpoints of obtaining desired electrophotographic characteristics and economic effects. , And most preferably 0.5 to 3 μm. When the layer thickness is less than 0.1 μm, the ability to stop the injection of charges from the support tends to be insufficient, which is disadvantageous in terms of charging ability. Even if the thickness is more than 5 μm, improvement in electrophotographic properties is expected. This is disadvantageous because it increases the manufacturing cost due to extension of the manufacturing time.

To form the charge injection blocking layer, a vacuum deposition method similar to the above-described method of forming the photoconductive layer is employed.

In order to form the charge injection blocking layer 205, similarly to the photoconductive layer 203, the mixing ratio of the gas for supplying Si and the diluting gas, the gas pressure in the reaction vessel, the discharge power and the temperature of the support 201 Is set as appropriate.

The flow rate of H ₂ and / or He, which is a diluent gas, is appropriately selected according to the layer design.
The feed gas to the H ₂ and / or He, usually 0.3 to 20 times, and preferably to 0.5 to 15 times, the optimal 1
It is desirable to control to a range of 10 to 10 times.

Similarly, an optimum range of the gas pressure in the reaction vessel is appropriately selected in accordance with the layer design.
× 10 ^{-2 to} 1.0 × 10 ³ Pa, more preferably 5.0 × 1
0 ^{-2 to} 5.0 × 10 ² Pa, optimally 1.0 × 10 ^{-1 to} 1.0
It is preferably set to × 10 ² Pa.

Similarly, the optimum range of the discharge power is appropriately selected according to the layer design. The ratio of the discharge power to the flow rate of the gas for supplying Si is usually 0.5 to 8, preferably 0.8. It is desirable to set it in the range of 7, most preferably 1１〜6.

Further, the temperature of the support 201 in forming the charge injection blocking layer is appropriately selected in an optimum range according to the layer design.
℃, more preferably 230-330 ℃ optimally 250-
Desirably, the temperature is 310 ° C.

In the present invention, the preferable ranges of the mixing ratio of the diluent gas, the gas pressure, the discharge power, and the temperature of the support for forming the charge injection blocking layer include the above-mentioned ranges. Usually, they are not independently determined separately, but it is desirable to determine the optimum value of each layer forming factor based on mutual and organic relations to form a surface layer having desired properties.

In the light receiving member of the present invention, the support 201 and the photoconductive layer 203 or the charge injection blocking layer 2
For the purpose of further improving the adhesion between the silicon atom and Si, for example, Si ₃ N ₄ , SiO ₂ , SiO, or a silicon atom as a base, a hydrogen atom and / or a halogen atom, a carbon atom, an oxygen atom, An adhesion layer formed of an amorphous material containing nitrogen atoms and / or the like may be provided. Further, a light absorbing layer for preventing an interference pattern from being generated by light reflected from the support may be provided.

<Electrophotographic Apparatus> FIG. 1 is a schematic view showing an image forming process of a negatively charged electrophotographic apparatus such as a laser printer using the light receiving member of the present invention.

In this process, a main charging unit 1802, an image forming light beam 1803, a developing unit 1804, and a main static elimination light source are provided near a rotating cylindrical light receiving member 1801 in a direction perpendicular to the paper surface and in close proximity to the light receiving member. 1806, a transport system 1813 and the like are arranged.

The light receiving member 1801 is driven to rotate in the X direction, is uniformly negatively charged by the main charger 1802, and is irradiated with an image forming light beam 1803 having information on the original, thereby causing the light receiving member 1801 to rotate. An electrostatic latent image is formed thereon. The latent image is supplied with a developer from a developing device 1804 and becomes a visible image, that is, develops.

On the other hand, the transfer material P is transferred to a transfer paper supply system 1810 comprising a transfer paper path 1811 and registration rollers 1809.
Is supplied in the direction of the light receiving member 1801, and an electric field having a polarity opposite to that of the developer is applied from the back surface in the gap between the transfer / separation charger 1812 and the light receiving member 1801, whereby the light receiving member The development on the surface is transferred to the transfer material P. The transfer material P separated from the light receiving member passes through a transfer paper transport system 1813, reaches a fixing device (not shown), and is discharged out of the device.

The residual developer remaining on the surface of the photosensitive member without contributing to the transfer at the transfer portion reaches the cleaner 1805 and is cleaned by the cleaning blade 1807, and the light receiving member 1801 updated by the cleaning is removed.
Is further provided with static elimination light from the main static elimination light source 1806,
It is again subjected to the next image forming process.

Although the charger shown in FIG. 1 is a conventional corona charger, any charging method may be used as long as the surface can be uniformly charged, and a charging method in which a conductive roller is brought into contact may be employed. . <Production Apparatus> Next, an apparatus for forming a light receiving layer and a film forming method will be described in detail.

FIG. 3 is a schematic diagram showing an example of an apparatus for manufacturing a light receiving member by a high frequency plasma CVD method (hereinafter abbreviated as “RF-PCVD”) in an RF band as a power supply frequency. The configuration of the manufacturing apparatus shown in FIG. 3 is as follows.

This apparatus is roughly classified into a deposition apparatus (310)
0), a source gas supply device (3200), a reaction vessel (3200)
111) is constituted by an exhaust device (not shown) for reducing the pressure in the inside. A cylindrical support (3112), a heater for heating the support (3113), and a source gas introduction pipe (311) are provided in a reaction vessel (3111) in the deposition apparatus (3100).
4) is installed, and a high-frequency matching box (3)
115) are connected.

The source gas supply device (3200) is made of SiH ₄ ,
Gas cylinders (32 for GeH ₄ , H ₂ , CH ₄ , B ₂ H ₆ , PH ₃ etc.)
21 to 2226) and valves (3231 to 236, 32)
41-3246, 3251-256) and mass flow controllers (3211-216), and each gas cylinder is connected to a gas introduction pipe (3114) in a reaction vessel (3111) via a valve (3260). I have.

The formation of a deposited film using this apparatus can be performed, for example, as follows.

First, the cylindrical support (3112) is set in the reaction vessel (3111), and the inside of the reaction vessel (3111) is evacuated by an exhaust device (not shown) (for example, a vacuum pump). Subsequently, the temperature of the cylindrical support (3112) is increased from 200 ° C. to 350 ° C. by the support heater (3113).
Control to a predetermined temperature of ° C.

A source gas for forming a deposited film is supplied to a reaction vessel (31).
In order to make the gas flow into 11), the gas cylinder valve (323)
1-3236), leak valve of the reaction vessel (3131)
Is closed, and check that the inlet valve (3
241 to 246), outflow valve (3251 to 325)
6) After confirming that the auxiliary valve (3260) is closed, first, the main exhaust valve (3118) is opened to exhaust the reaction vessel (3111) and the inside of the gas pipe (3116).

Next, the reading of the vacuum gauge (3119) was about 5 × 1.
When the pressure becomes 0 ^-4 Pa, the auxiliary valve (3260) and the outflow valves (3251 to 256) are closed.

Thereafter, gas cylinders (3221 to 322)
From 6), each gas is introduced by opening the valves (3231 to 236), and each gas pressure is adjusted to 0.3 MPa by the pressure regulators (3261 to 266). Next, the inflow valves (3241 to 246) are gradually opened, and each gas is introduced into the mass flow controllers (3211 to 216).

After the preparation for film formation is completed as described above, each layer is formed in the following procedure.

When the temperature of the cylindrical support (3112) reaches a predetermined temperature, necessary ones of the outflow valves (3251 to 256) and the auxiliary valve (3260) are gradually opened, and a predetermined amount is opened from the gas cylinder (3221 to 226). Gas from the reaction vessel (311) via the gas introduction pipe (3114).
Introduce in 1). Next, the mass flow controller (3
According to 211 to 216), each raw material gas is adjusted so as to have a predetermined flow rate. At this time, the main exhaust valve (3118) is monitored while watching the vacuum gauge (3119) so that the pressure in the reaction vessel (3111) becomes a predetermined pressure of 150 Pa or less.
Adjust the opening of. When the internal pressure becomes stable, frequency 1
A 3.56 MHz RF power supply (not shown) is set to a desired power, and RF power is introduced into the reaction vessel (3111) through the high frequency matching box (3115) to generate glow discharge. The raw material gas introduced into the reaction vessel is decomposed by this discharge energy, and the cylindrical support (31
12) A deposited film mainly containing predetermined silicon is formed thereon. After the desired film thickness is formed,
The supply of RF power is stopped, the outflow valve is closed, and the flow of gas into the reaction vessel is stopped, thereby completing the formation of the deposited film. By repeating the same operation a plurality of times, a light receiving layer having a desired multilayer structure is formed.

When forming each layer, it goes without saying that all outflow valves other than the necessary gas are closed, and each gas is supplied to the reaction vessel (3111).
In order to avoid remaining in the piping from the outflow valves (3251 to 256) to the reaction vessel (3111), the outflow valves (3251 to 256) are closed, the auxiliary valve (3260) is opened, and the main exhaust valve is opened. (3
If necessary, an operation of fully opening 118) and evacuating the inside of the reaction vessel to a high vacuum is performed.

In order to make the film formation uniform, it is also effective to rotate the support (3112) at a predetermined speed by a driving device (not shown) during the layer formation.

Further, it goes without saying that the above-mentioned gas types and valve operations are changed according to the conditions for forming each layer.

The temperature of the support during the formation of the deposited film is preferably 200
℃ to 350 ° C, preferably 230 ° C to 330 ° C
The temperature is desirably 250 ° C. or more and 310 ° C. or less.

The heating method of the support may be a heating element having a vacuum specification, and more specifically, an electric resistance heating element such as a winding heater of a sheath heater, a plate heater, a ceramic heater, a halogen lamp, an infrared lamp, or the like. Examples of the heating element include a heat radiation lamp heating element such as a lamp, and a heating element using a liquid or a gas as a heating medium and a heat exchange unit. As the surface material of the heating means, metals such as stainless steel, nickel, aluminum, and copper, ceramics, heat-resistant polymer resins, and the like can be used.

In addition to the above, a method is also used in which a heating-only container is provided in addition to the reaction container, and after heating, the support is conveyed into the reaction container in a vacuum.

Hereinafter, the present invention will be described more specifically with reference to experimental examples.

<< Experimental Example 1 >> Using an apparatus for manufacturing a light receiving member by the RF-PCVD method shown in FIG. 3, an 80 mm diameter mirror-finished aluminum cylinder (support) was used.
Light receiving members 1-a to 1-f each including a charge injection blocking layer, a photoconductive layer, and a surface layer (connection region + surface region) were produced. Table 1 shows the conditions for producing the light receiving member at this time. At this time, the gas for supplying Si atoms, the gas for supplying carbon atoms, and the gas for supplying atoms belonging to Group 13 of the periodic table in the connection region are changed as shown in FIGS. The maximum value of the content of the genus atom was set to 1000 ppm (when uniform, it was constant at 1000 ppm). Further, in the surface region, supply gas for atoms belonging to Group 13 of the periodic table was not introduced. In FIG. 4, the unit of the film thickness is 1/10 of the thickness of the connection region as one unit. The unit of the gas flow rate is ml / min (normal).

The thickness of the connection region was fixed at 0.25 μm.

In the layer direction in the connection region of each light receiving member,
The content distributions of Si, C and B are shown in FIGS.
(F) Corresponds to each curve of SiH4, CH4 and B2H6.

An electrophotographic device (remodeling the Canon NP-6550 into a negative charging system for experiments)
And the potential characteristics were evaluated.

At this time, the process speed was 380 mm / se.
c, light was discharged by a potential sensor of a surface electrometer (TREK, Model 344) set at the developing device position of the electrophotographic apparatus under the conditions of 4 lx · sec of static elimination light (LED with a wavelength of 700 nm) and a current value of the charger of 1000 μA. The surface potential of the receiving member was measured and used as the charging ability.

Using a 680 nm LED light source for image exposure, the surface potential was adjusted to 450 V when the amount of image exposure was 0,
Next, the amount of exposure required to lower the surface potential to 50 V was measured, and the measured value was used as the sensitivity.

Further, the produced light-receiving member was negatively charged, and a test chart was copied using a negatively charging developer to evaluate image characteristics (image deletion, interference fringes).

Table 2 shows the evaluation results. The evaluation was shown in comparison with the light receiving member (1-a) in which atoms belonging to Group 13 of the periodic table were uniformly contained in the connection region. The preparation conditions were such that the B atom content in Table 1 was constant at 1000 ppm.

When the chargeability was improved by 10% or more, ◎,
Within ± 10%, it was regarded as equivalent, and ○ was given when it decreased by -10% or more.

When the sensitivity was improved by 5% or more, ◎, ± 5
% Is regarded as equivalent, and △ when -5% or more decreased.

The image flow was evaluated by observing the spread of a straight line having a thickness of 2 mm on the test chart under magnification. When a clear image was obtained at 2 mm, the result is ◎. When a part that is 2 to 2.5 mm but thicker is observed, a part is displayed. did.

No interference fringes were observed at all by using a test chart in which a 20 cm long, 0.5 mm wide straight line was drawn at 0.5 mm intervals and a vertical stripe pattern in the longitudinal direction of A3 and a vertical stripe pattern perpendicular thereto were used. In this case, the evaluation was 、, when the blurred portion was observed, the evaluation was ○, and when the interference fringe was observed, the evaluation was △.

As shown in Table 2, overall excellent results were obtained for the light receiving members 1-b, e, and f.

That is, in the connection region for smoothly connecting the surface region of the surface layer and the photoconductive layer, the content of atoms belonging to Group 13 of the periodic table is changed and the content of atoms belonging to Group 13 of the periodic table is changed. The content is changed so that the atoms belonging to Group 13 of the periodic table have a maximum value in a region on the surface side of at least 1/3 from the interface of the photoconductive layer having a layer thickness of the connection region, so that the light for electrophotography is obtained. It was found that the receiving member exhibited generally good characteristics.

[0177]

[Table 1]

[0178]

[Table 2]

<< Experimental Example 2 >> Using an apparatus for manufacturing a light-receiving member by the RF-PCVD method shown in FIG. 3, an 80 mm-diameter mirror-finished aluminum cylinder (support) was used.
A light receiving member including a charge injection blocking layer, a photoconductive layer, and a surface layer (connection region + surface region) was manufactured.

In this experiment, the light receiving members 2-af were formed under the conditions shown in Table 1 except that the maximum value of the connection region was changed as shown in Table 3. At this time, the connection area was created in the pattern shown in FIG.

The thickness of the connection region was fixed at 0.25 μm.

In the layer direction in the connection region of each light receiving member,
In the content distributions of Si, C and B, although the absolute values of the maximum values are different, the patterns correspond to the curves in FIG.

Evaluation was performed in the same manner as in Experimental Example 1.
It was shown to. The evaluation was made on the basis of the characteristics of the light receiving member (the same light receiving member as 1-e: 2-C) with the maximum value of the connection region being 1000 ppm.

When the charging ability was improved by 10% or more, ◎,
Within ± 10%, it was regarded as equivalent, and ○ was given when it decreased by -10% or more.

When the sensitivity was improved by 5% or more, ◎, ± 5
% Is regarded as equivalent, and △ when -5% or more decreased.

The image flow was evaluated by observing the spread of a straight line having a thickness of 2 mm on the test chart under magnification. When a clear image was obtained at 2 mm, the result is ◎. When a part thicker than 2 to 2.5 mm but a part of the part is thicker is observed, △ when a part thicker than 2.5 mm is observed. And

As for the interference fringes, a vertical stripe pattern A3 size test chart was used.
In the case where a blurred portion of the stripe pattern was observed, the result was evaluated as “○”.

As shown in Table 4, overall excellent results were obtained for the light receiving members 2-b to e. Although 2-a and 2-f obtained relatively inferior results in the present example, the 1-th group atoms in which the group 13 atoms were uniformly distributed in the connection region were obtained.
Compared with a, it had overall better characteristics.

That is, in the connection region that smoothly connects the surface region of the surface layer and the photoconductive layer, the content of atoms belonging to Group 13 of the periodic table is changed, and the content of atoms belonging to Group 13 of the periodic table is changed. The content is such that atoms belonging to Group 13 of the periodic table have a maximum value in a region on the surface side of at least ３ from the interface of the photoconductive layer having a thickness of the connection region, and a maximum value of 100 to 10,000 ppm. It has been found that by setting the content as described below, the photoreceptive member for electrophotography generally exhibits particularly favorable characteristics.

[0190]

[Table 3]

[0191]

[Table 4]

<< Experimental Example 3 >> Using an apparatus for manufacturing a light receiving member by the RF-PCVD method shown in FIG. 3, an 80 mm diameter mirror-finished aluminum cylinder (support) was used.
A light receiving member including a charge injection blocking layer, a photoconductive layer, and a surface layer (connection region + surface region) was manufactured.

In this experiment, the maximum value of the connection area was set to 1000 pp.
As m, the film thickness of the connection region was changed as shown in Table 5, and the light receiving members 3-a to 3-f were formed under the same manufacturing conditions as those in Experimental Example 1 except for the conditions shown in Table 1. At that time, the connection area is shown in FIG.
It was created with the pattern of (e).

The layer direction in the connection region of each light receiving member is
The content distributions of Si, C and B correspond to the respective curves in FIG.

Evaluation was performed in the same manner as in Experimental Example 1, and the evaluation results were shown in Table 6.
It was shown to. The evaluation was made based on the characteristics of the light receiving member (3-C) having a thickness of 0.1 μm in the connection region.

When the charging ability was improved by 10% or more, ◎,
Within ± 10%, it was regarded as equivalent, and ○ was given when it decreased by -10% or more.

When the sensitivity was improved by 5% or more, ◎, ± 5
% Is regarded as equivalent, and △ when -5% or more decreased.

The image deletion was evaluated by observing the spread of a straight line having a thickness of 2 mm on the test chart under magnification. When a clear image was obtained at 2 mm, the result is ◎. When a part thicker than 2 to 2.5 mm but a part of the part is thicker is observed, △ when a part thicker than 2.5 mm is observed. And

As for the interference fringes, a vertical stripe pattern A3 size test chart was used.
In the case where a blurred portion of the stripe pattern was observed, the result was evaluated as “○”.

As shown in Table 6, overall excellent results were obtained for the light receiving members 3-b to 3-e. In addition, 3-a and 3-f obtained relatively inferior results in the present example, but 1-atoms in which the group 13 atoms were uniformly distributed in the connection region.
Compared with a, it had overall better characteristics.

That is, in the connection region that smoothly connects the surface region of the surface layer and the photoconductive layer, the content of atoms belonging to Group 13 of the periodic table is changed, and the content of atoms belonging to Group 13 of the periodic table is changed. The content is set such that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side of at least 1/3 from the interface of the photoconductive layer with the layer thickness of the connection region. It has been found that when the thickness is 0.05 or more and 0.5 μm or less, particularly favorable characteristics are generally exhibited as a light receiving member for electrophotography.

[0202]

[Table 5]

[0203]

[Table 6]

[0204]

The present invention will be described more specifically with reference to the following examples.

Example 1 An 80 mm-diameter mirror-finished aluminum cylinder (support) was manufactured using the apparatus for manufacturing a light-receiving member by the RF-PCVD method shown in FIG.
A light receiving member including a charge injection blocking layer, a photoconductive layer, and a surface layer (connection region + surface region) was manufactured. Table 7 shows the conditions for producing the light receiving member at this time. At this time, the gas for supplying each element in the connection region was changed and contained as shown in FIG. In FIG. 5, the unit of the film thickness is 1/10 of the thickness of the connection region as one unit. The unit of the gas flow rate is ml / min (normal).

The light receiving member produced in the same manner as in Experimental Example 1 was set in an electrophotographic apparatus (a Canon NP-6550 was modified into a negative charging system for the experiment), and the potential characteristics and image characteristics were evaluated. And good characteristics were obtained.

That is, in the connection region for smoothly connecting the surface region of the surface layer and the photoconductive layer, the contents of silicon atoms and carbon atoms and at least one kind of atoms belonging to Group 13 of the periodic table change. In addition, the content of atoms belonging to Group 13 of the periodic table is at least 1/3 or more from the interface of the photoconductive layer having the thickness of the connection region, so that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side. By doing so, it was found that the photoreceptive member for electrophotography exhibited generally good characteristics.

[0208]

[Table 7]

Embodiment 2 In this embodiment, the photoconductive layer has two layers, a first layer region and a second layer region.

Table 8 shows the conditions for producing the light receiving member at this time. At this time, the gas for supplying each element in the connection region was changed and contained as shown in FIG. 5B.

The photoreceptor member produced in the same manner as in Experimental Example 1 was set in an electrophotographic apparatus (a Canon NP-6550 was modified into a negative charging system for experiments), and the potential characteristics and image characteristics were evaluated. And good characteristics were obtained.

That is, in the connection region where the surface region of the surface layer and the photoconductive layer are smoothly connected, the contents of silicon atoms and carbon atoms and at least one kind of atoms belonging to Group 13 of the periodic table change. In addition, the content of atoms belonging to Group 13 of the periodic table is at least 1/3 or more from the interface of the photoconductive layer having the thickness of the connection region, so that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side. By doing so, it was found that the photoreceptive member for electrophotography exhibited generally good characteristics.

[0213]

[Table 8]

Embodiment 3 In this embodiment, the first layer region and the second layer region are arranged in this order from the charge injection blocking layer side of the photoconductive layer.
All layers contained fluorine atoms.

Table 9 shows the conditions for producing the light receiving member at this time. At this time, the gas for supplying each element in the connection region was changed and contained as shown in FIG.

The light receiving member produced in the same manner as in Experimental Example 1 was set in an electrophotographic apparatus (a Canon NP-6550 was modified into a negative charging system for experiments), and the potential characteristics and image characteristics were evaluated. And good characteristics were obtained.

That is, in the connection region for smoothly connecting the surface region of the surface layer and the photoconductive layer, the contents of silicon atoms and carbon atoms and at least one kind of atoms belonging to Group 13 of the periodic table change. In addition, the content of atoms belonging to Group 13 of the periodic table is at least 1/3 or more from the interface of the photoconductive layer having the thickness of the connection region, so that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side. By doing so, it was found that the photoreceptive member for electrophotography exhibited generally good characteristics.

[0218]

[Table 9]

Embodiment 4 In this embodiment, the first layer region and the second layer region are arranged in this order from the charge injection blocking layer side of the photoconductive layer.
The surface layer contained nitrogen atoms and oxygen atoms.

Table 10 shows the conditions for manufacturing the light receiving member at this time. At this time, the change of the supply gas of the Si atoms, the supply gas of the carbon atoms, and the supply gas of the atoms belonging to Group 13 of the periodic table in the connection region was changed as shown in FIG.

The light receiving member produced in the same manner as in Experimental Example 1 was set in an electrophotographic apparatus (a Canon NP-6550 was modified into a negative charging system for experiments), and the potential characteristics and image characteristics were evaluated. And good characteristics were obtained.

That is, in the connection region for smoothly connecting the surface region of the surface layer and the photoconductive layer, the contents of silicon atoms and carbon atoms and at least one kind of atoms belonging to Group 13 of the periodic table change. In addition, the content of atoms belonging to Group 13 of the periodic table is at least 1/3 or more from the interface of the photoconductive layer having the thickness of the connection region, so that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side. By doing so, it was found that the photoreceptive member for electrophotography exhibited generally good characteristics.

[0223]

[Table 10]

Example 5 In this example, a first layer region, a second layer region and a surface layer containing carbon atoms were formed in a photoconductive layer using CH ₄ gas as a carbon source.

Table 11 shows the conditions for manufacturing the light receiving member at this time. At that time, the gas for supplying Si atoms, the gas for supplying carbon atoms, and the gas for supplying atoms belonging to Group 13 of the periodic table in the connection region were changed and contained as shown in FIG. 5 (e).

The light receiving member produced in the same manner as in Experimental Example 1 was set in an electrophotographic apparatus (a Canon NP-6550 was modified into a negative charging system for experiments), and the potential characteristics and image characteristics were evaluated. And good characteristics were obtained.

That is, in the connection region that smoothly connects the surface region of the surface layer and the photoconductive layer, the contents of silicon atoms and carbon atoms and at least one type of atom belonging to Group 13 of the periodic table change. In addition, the content of atoms belonging to Group 13 of the periodic table is at least 1/3 or more from the interface of the photoconductive layer having the thickness of the connection region, so that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side. By doing so, it was found that the photoreceptive member for electrophotography exhibited generally good characteristics.

[0228]

[Table 11]

Embodiment 6 In this embodiment, the first layer region and the second layer region are arranged in this order from the charge injection blocking layer side of the photoconductive layer.
Helium was introduced instead of hydrogen, and the second layer region was formed at a higher pressure than the first layer region.

Table 12 shows the conditions for producing the light receiving member at this time. At that time, the change of the supply gas of the Si atoms, the supply gas of the carbon atoms, and the supply gas of the atoms belonging to Group 13 of the periodic table in the connection region was changed as shown in FIG.

The light receiving member produced in the same manner as in Experimental Example 1 was set in an electrophotographic apparatus (a Canon NP-6550 was modified into a negative charging system for the experiment), and the potential characteristics and image characteristics were evaluated. And good characteristics were obtained.

That is, in the connection region for smoothly connecting the surface region of the surface layer and the photoconductive layer, the contents of silicon atoms and carbon atoms and at least one kind of atoms belonging to Group 13 of the periodic table change. In addition, the content of atoms belonging to Group 13 of the periodic table is at least 1/3 or more from the interface of the photoconductive layer having the thickness of the connection region, so that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side. By doing so, it was found that the photoreceptive member for electrophotography exhibited generally good characteristics.

[0233]

[Table 12]

Embodiment 7 In this embodiment, the first layer region and the second layer region are arranged in this order from the charge injection blocking layer side of the photoconductive layer.
All layers contained nitrogen, carbon and oxygen atoms.

Table 13 shows the conditions for producing the light receiving member at this time. At this time, the gas for supplying each element in the connection region was changed and contained as shown in FIG.

The light receiving member produced in the same manner as in Experimental Example 1 was set in an electrophotographic apparatus (a Canon NP-6550 was modified into a negative charging system for the experiment), and the potential characteristics and image characteristics were evaluated. And good characteristics were obtained.

That is, in the connection region for smoothly connecting the surface region of the surface layer and the photoconductive layer, the contents of silicon atoms and carbon atoms and at least one kind of atoms belonging to Group 13 of the periodic table change. In addition, the content of atoms belonging to Group 13 of the periodic table is at least 1/3 or more from the interface of the photoconductive layer having the thickness of the connection region, so that the atoms belonging to Group 13 of the periodic table have the maximum value in the region on the surface side. By doing so, it was found that the photoreceptive member for electrophotography exhibited generally good characteristics.

[0238]

[Table 13]

[0239]

According to the present invention, a digital copying machine, which has charging characteristics suitable for negative charging and can substantially eliminate an interference pattern which becomes a problem when coherent light is used, An excellent light-receiving member as a full-color electrophotographic light-receiving member of a negatively charged developer can be obtained.

Therefore, the a-Si light receiving member of the present invention has a specific structure as described above.
Can solve the problems in the conventional electrophotographic light receiving member composed of, particularly excellent electrical properties,
It shows optical characteristics, photoconductive characteristics, image characteristics, durability and use environment characteristics.

In particular, in the present invention, in the connection region for smoothly connecting the surface region of the surface layer and the photoconductive layer, silicon atoms and carbon atoms and at least one atom belonging to Group 13 of the periodic table are contained. The amount is changed, and the content of atoms belonging to Group 13 of the periodic table has a maximum value in a region on the surface side of the connection region, which is at least 1/3 or more from the interface of the photoconductive layer. It is characterized by having excellent charging characteristics during charging and excellent image characteristics even with coherent light.

[Brief description of the drawings]

FIG. 1 is a schematic layer configuration diagram for explaining a configuration of an electrophotographic apparatus using a light receiving member of the present invention.

FIG. 2 is a schematic layer configuration diagram for explaining a layer configuration of a preferred embodiment of the light receiving member of the present invention.

FIG. 3 is a schematic explanatory view of an example of a device for forming a light receiving layer of the light receiving member of the present invention, which is a device for manufacturing a light receiving member by a glow discharge method using an RF band high frequency power supply.

FIG. 4 is a view showing a distribution state of atoms belonging to Group 13 of the periodic table in a connection region of an experimental example (the film thickness is shown as 1/10 of the connection region as one unit).

FIG. 5 is a diagram showing a distribution state of atoms belonging to Group 13 of the periodic table in the connection region of the example (the film thickness is represented by 1/15 of the connection region as one unit).

[Explanation of symbols]

 1801 Light receiving member 1802 Main charger 1803 Image forming light beam (image exposure) 1804 Developing device 1805 Cleaner 1806 Main static elimination light source 1807 Cleaning blade 1809 Registration roller 1810 Transfer paper supply system 1811 Transfer paper path 1812 Transfer / separation charger 1813 Transport system 200 Light receiving member 201 Conductive support 202 Photoreceptive layer 203 Photoconductive layer 204 Surface layer 205 Charge injection blocking layer 206 Free surface 207 Connection area 208 Surface area 3100 Deposition device 3111 Reaction vessel 3112 Cylindrical support 3113 Heater for heating support 3114 Source gas introduction pipe 3115 Matching box 3116 Source gas pipe 3118 Main exhaust valve 3119 Vacuum gauge 3200 Source gas supply device 3211-316 Mass flow controller Over 3,221 to 3,226 raw gas cylinders 3231 to 3236 starting material gas cylinder valves 3241 to 3246 gas inlet valve 3251 to 3256 gas outflow valves 3261-3266 pressure regulator

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Nobufumi Tsuchida 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Hiroaki Shinno 3-30-2 Shimomaruko, Ota-ku, Tokyo Non-corporation F term (reference) 2H068 DA05 DA08 DA15 DA19 FB07

Claims (8)

[Claims] At least a photoconductive layer and a surface layer are sequentially laminated on a conductive support, and the photoconductive layer and the surface layer are made of an amorphous material containing silicon atoms. In, the surface layer has a layered surface region and a layered connection region connecting the surface region and the photoconductive layer,
The connection region contains a silicon atom, a carbon atom, and at least one group 13 atom of the periodic table. In the connection region, the content of the group 13 atom increases from the photoconductive layer-side interface, and A light-receiving member for electrophotography, wherein the member is distributed so as to have a maximum value in a thickness direction. 2. The electrophotography according to claim 1, wherein the maximum value of the content of the group 13 atom is in a region which is at least 1/3 or more of the thickness of the connection region from the interface with the photoconductive layer on the surface side. Light receiving member. 3. The light receiving member for electrophotography according to claim 1, wherein the content ratio of silicon atoms to carbon atoms in the connection region changes in the thickness direction. 4. The content of silicon atoms, carbon atoms, and group 13 atoms in the connection region is such that the connection region side end of the photoconductive layer and the connection region side end of the surface region are continuously changed. The electrophotographic light-receiving member according to claim 1, wherein the light-receiving member is distributed in a range of: 5. The method according to claim 1, wherein the content of silicon atoms and carbon atoms in the connection region is such that the ratio of the amount of carbon atoms to the sum of silicon and carbon atoms is minimized at the end of the connection region on the photoconductive layer side. The electrophotographic light-receiving member according to any one of claims 1 to 4, wherein the light-receiving member is distributed so as to be maximized at a region side end. 6. The electrophotographic light-receiving member according to claim 1, wherein the connection region has a layer thickness of 0.05 μm or more and 0.5 μm or less. 7. The method according to claim 1, wherein said maximum value is 100 atomic ppm or more and 100 atomic ppm or more.
The light-receiving member for electrophotography according to any one of claims 1 to 6, wherein the amount is not more than 00 atomic ppm. 8. An electrophotographic light-receiving member according to claim 1, wherein the wavelength is 500 nm or more.
An electrophotographic apparatus, wherein image exposure is performed using coherent light of 0 nm or less.