JP2002232260A - Surface acoustic wave device and manufacturing method of the same - Google Patents

Surface acoustic wave device and manufacturing method of the same

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Publication number
JP2002232260A
JP2002232260A JP2001029079A JP2001029079A JP2002232260A JP 2002232260 A JP2002232260 A JP 2002232260A JP 2001029079 A JP2001029079 A JP 2001029079A JP 2001029079 A JP2001029079 A JP 2001029079A JP 2002232260 A JP2002232260 A JP 2002232260A
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JP
Japan
Prior art keywords
electrode
surface acoustic
acoustic wave
wave device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001029079A
Other languages
Japanese (ja)
Other versions
JP4496652B2 (en
Inventor
Akihiko Nanba
昭彦 南波
Keiji Onishi
慶治 大西
Yasuhiro Sugaya
康博 菅谷
Katsunori Moritoki
克典 守時
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001029079A priority Critical patent/JP4496652B2/en
Priority to US10/399,305 priority patent/US6969945B2/en
Priority to CNB028030648A priority patent/CN1221076C/en
Priority to EP02711321.6A priority patent/EP1361657B1/en
Priority to PCT/JP2002/000949 priority patent/WO2002063763A1/en
Publication of JP2002232260A publication Critical patent/JP2002232260A/en
Priority to US11/220,815 priority patent/US7246421B2/en
Application granted granted Critical
Publication of JP4496652B2 publication Critical patent/JP4496652B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/73201—Location after the connecting process on the same surface
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To solve the problem that it is difficult to make the area of a device small, to make the device small by making the height of device small, to further bring about cost reduction and to secure reliability in a conventional surface acoustic wave device. SOLUTION: This surface acoustic wave device comprises a piezoelectric board 101, a comb-shaped electrode 102 provided on one principal place of the board 101 and for exciting a surface acoustic wave, a space forming part 108 provided in the comb-shaped electrode part, a plurality of projection electrodes 104 provided on the one principal plane of the board 101 and terminal electrodes 105 provided facing the one principal plane of the board 101, the projection electrodes 104 are connected directly and electrically to the terminal electrodes 105, and insulating material 106 such as resin base material is filled between the board 101 and the terminal electrodes 105.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、例えば、携帯電
話、キーレスエントリー等の通信機器に搭載される周波
数フィルタ、共振器として用いられる弾性表面波装置に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used as a frequency filter or a resonator mounted on a communication device such as a cellular phone and a keyless entry.

【０００２】[0002]

【従来の技術】近年、携帯電話に代表される通信機器の
小型、軽量化が急速に進んできており、機器に搭載され
るフィルタ、共振器等の弾性表面波装置にも装置面積を
小さくする、装置の高さを小さくするといった小型化が
求められてきている。2. Description of the Related Art In recent years, the size and weight of communication devices typified by mobile phones have been rapidly reduced, and the surface area of surface acoustic wave devices such as filters and resonators mounted on the devices has been reduced. In addition, miniaturization such as reducing the height of the apparatus has been demanded.

【０００３】代表的な従来の弾性表面波装置を図１０に
示す。図１０において、圧電基板９０１上には、弾性表
面波を励振するための櫛型電極９０２が設けられてお
り、また、櫛型電極９０２に電気信号を伝送するための
電極パッド９０３が設けられている。電極パッド９０３
はパッケージに設けられた電極パッド９０５とワイヤー
９０４により個々に接続されている。ワイヤー９０４は
通常、金、アルミニウム等からなる。ここで、パッケー
ジはアルミナ等のセラミック９０８、９０９、９１０８
の積層体で構成されており、電極パッド９０５から内部
電極９０６を通って端子電極９０７と導通が取られてい
る。また、図示されていないが、圧電基板９０１はセラ
ミック基板９０８とシリコーン等の樹脂接着材料により
接着されている。また、９１１は、セラミック、或いは
金属等からなる蓋体である。FIG. 10 shows a typical conventional surface acoustic wave device. 10, a comb-shaped electrode 902 for exciting a surface acoustic wave is provided on a piezoelectric substrate 901, and an electrode pad 903 for transmitting an electric signal to the comb-shaped electrode 902 is provided. I have. Electrode pad 903
Are individually connected to electrode pads 905 provided on the package by wires 904. Wire 904 is typically made of gold, aluminum, or the like. Here, the package is ceramic 908, 909, 9108 such as alumina.
, And conduction with the terminal electrode 907 from the electrode pad 905 through the internal electrode 906. Although not shown, the piezoelectric substrate 901 is bonded to the ceramic substrate 908 with a resin bonding material such as silicone. Reference numeral 911 denotes a lid made of ceramic, metal, or the like.

【０００４】次に、図１０の装置よりも小型化が可能と
なる従来装置を図１１に示す。ここでは、圧電基板９０
１、櫛型電極９０２、電極パッド９０３で構成される弾
性表面波素子をフェイスダウンで実装している。基板９
１２との接続は、導電性のバンプ９１４で行っている。
これらの積層体に対して図１１に示すように樹脂９１３
を流し込んで、素子と基板との固定を強化している。Next, FIG. 11 shows a conventional apparatus which can be made smaller than the apparatus shown in FIG. Here, the piezoelectric substrate 90
1. A surface acoustic wave element including a comb-shaped electrode 902 and an electrode pad 903 is mounted face down. Substrate 9
The connection with No. 12 is made by a conductive bump 914.
As shown in FIG.
To enhance the fixation between the element and the substrate.

【０００５】[0005]

【発明が解決しようとする課題】しかしながら、図１０
に示した従来例による構造では、ワイヤー９０４を横方
向、高さ方向に配線する必要があり、また、ワイヤーを
打つためには、電極パッド９０３、９０５の面積を大き
くしなければならず、装置の小型化が大きく阻害され
る。更に、装置の高周波化に伴い、ワイヤー９０４の持
っている寄生インダクタンスが素子特性を劣化させる原
因にもなる。また、製造工程でも、ワイヤー９０４を対
応する電極パッドに一本一本打っていかなければなら
ず、低コスト化を阻害する要因となっていた。However, FIG.
In the structure according to the conventional example shown in FIG. 1, it is necessary to wire the wire 904 in the horizontal direction and the height direction, and to hit the wire, the area of the electrode pads 903 and 905 must be increased. Is greatly hindered. Furthermore, with the increase in the frequency of the device, the parasitic inductance of the wire 904 causes deterioration of element characteristics. Also, in the manufacturing process, the wires 904 must be struck one by one on the corresponding electrode pads, which is a factor that hinders cost reduction.

【０００６】これに対して図１１の従来例では、図１０
の従来例よりも小型化が可能であるが、この構造では配
線基板９１２自体の厚みが必要となるため、低背化を図
ることができない。また、例えば基板９１２での製造時
に、基板９１２の基材と内部電極９０６の電極ペースト
の硬化収縮の挙動が異なるため、内部電極９０６が基板
の厚み方向に突起あるいは陥没するため、バンプ９１４
と内部電極９０６の形成位置を図１１に示すＸ方向にず
らして設ける必要があった。On the other hand, in the conventional example of FIG.
Although the size can be reduced as compared with the conventional example, the thickness of the wiring board 912 itself is required in this structure, so that the height cannot be reduced. Further, for example, at the time of manufacturing on the substrate 912, the base material of the substrate 912 and the behavior of curing and shrinking of the electrode paste of the internal electrode 906 are different from each other.
And the formation positions of the internal electrodes 906 need to be shifted in the X direction shown in FIG.

【０００７】本発明は上記課題に鑑み、装置の小面積
化、低背化といった装置の小型化を実現し、更には、低
コスト化、信頼性の確保を可能とする弾性表面波装置の
構造、及びその製造方法を提供することを目的とするも
のである。SUMMARY OF THE INVENTION In view of the above problems, the present invention realizes downsizing of a device, such as reduction of the area and height of the device, and furthermore, the structure of a surface acoustic wave device capable of reducing cost and ensuring reliability. , And a method for producing the same.

【０００８】[0008]

【課題を解決するための手段】上記目的を達成するため
に、請求項１に記載の弾性表面波装置は、圧電基板と、
前記圧電基板の一主面上に設けられた弾性表面波を励振
するための櫛型電極と、前記櫛型電極部に設けられた空
間形成部と、前記圧電基板の前記一主面上に設けられた
複数の突起電極と、前記圧電基板の前記一主面と対向し
て設けられた端子電極とからなり、前記突起電極と前記
端子電極が直接電気的に接続されており、前記圧電基板
と前記端子電極間に絶縁材料が充填されていることを特
徴とする。According to a first aspect of the present invention, there is provided a surface acoustic wave device comprising: a piezoelectric substrate;
A comb-shaped electrode provided on one main surface of the piezoelectric substrate for exciting surface acoustic waves, a space forming portion provided on the comb-shaped electrode portion, and a comb-shaped electrode provided on the one main surface of the piezoelectric substrate A plurality of projecting electrodes, and a terminal electrode provided to face the one main surface of the piezoelectric substrate, wherein the projecting electrode and the terminal electrode are directly electrically connected, and the piezoelectric substrate An insulating material is filled between the terminal electrodes.

【０００９】さらに、請求項２に記載の発明は、突起電
極の電極材料が、金、すず、銅、鉛、銀の群から選ばれ
る少なくとも１つ以上の成分を有する金属からなること
を特徴とする請求項１記載の弾性表面波装置である。Further, the invention according to claim 2 is characterized in that the electrode material of the protruding electrode is made of a metal having at least one component selected from the group consisting of gold, tin, copper, lead and silver. The surface acoustic wave device according to claim 1, wherein

【００１０】さらに、請求項３に記載の発明は、少なく
とも櫛型電極部分に空間形成がなされていることを特徴
とする請求項１記載の弾性表面波装置である。Further, the invention according to claim 3 is the surface acoustic wave device according to claim 1, wherein a space is formed at least in a comb-shaped electrode portion.

【００１１】さらに、請求項４に記載の発明は、圧電基
板の一主面とは反対の主面が樹脂材料で覆われているこ
とを特徴とする請求項１記載の弾性表面波装置である。The invention according to a fourth aspect is the surface acoustic wave device according to the first aspect, wherein a main surface opposite to the one main surface of the piezoelectric substrate is covered with a resin material. .

【００１２】さらに、請求項５に記載の発明は、端子電
極が絶縁材料の面よりも窪んでいることを特徴とする請
求項１記載の弾性表面波装置である。Further, the invention according to claim 5 is the surface acoustic wave device according to claim 1, wherein the terminal electrode is recessed from the surface of the insulating material.

【００１３】また、請求項６に記載の弾性表面波装置の
製造方法は、弾性表面波を励振するための複数の櫛形電
極と、前記櫛形電極と電気的に接続された突起電極とを
圧電基板の一主面上に形成する工程と、前記圧電基板の
前記一主面と端子電極が形成されたセパレータ基板とを
対向させ、前記突起電極と前記端子電極とを電気的に導
通させる工程と、前記圧電基板と前記セパレータ基板と
の間に液状の樹脂材料を流し込む工程と、前記樹脂材料
を硬化後にセパレータ基板を除去する工程と、を含むこ
とを特徴とする。According to a sixth aspect of the present invention, there is provided a method of manufacturing a surface acoustic wave device, comprising: a plurality of comb electrodes for exciting surface acoustic waves; and a projection electrode electrically connected to the comb electrodes. Forming on the one main surface, the step of making the one main surface of the piezoelectric substrate and the separator substrate on which the terminal electrode is formed face, and electrically connecting the protruding electrode and the terminal electrode, A step of pouring a liquid resin material between the piezoelectric substrate and the separator substrate; and a step of removing the separator substrate after curing the resin material.

【００１４】さらに、請求項７に記載の発明は、弾性表
面波を励振するための複数の櫛形電極と、前記櫛形電極
と電気的に接続された突起電極とを圧電基板の一主面上
に形成する工程と、端子電極が形成されたセパレータ基
板上に液状の樹脂材料を乗せる工程と、前記圧電基板の
前記一主面と前記液状の樹脂材料が乗せられた前記セパ
レータ基板とを対向させ、前記突起電極と前記端子電極
とを電気的に導通させる工程と、前記樹脂材料を硬化後
に前記セパレータ基板を除去する工程と、を含むことを
特徴とする。Further, according to the present invention, a plurality of comb-shaped electrodes for exciting a surface acoustic wave and a protruding electrode electrically connected to the comb-shaped electrode are provided on one main surface of the piezoelectric substrate. Forming, placing a liquid resin material on the separator substrate on which the terminal electrodes are formed, and facing the one principal surface of the piezoelectric substrate and the separator substrate on which the liquid resin material is placed, The method includes a step of electrically connecting the protruding electrode and the terminal electrode, and a step of removing the separator substrate after curing the resin material.

【００１５】さらに、請求項８に記載の発明は、弾性表
面波を励振するための複数の櫛形電極と、前記櫛形電極
と電気的に接続された突起電極とを圧電基板の一主面上
に形成する工程と、前記圧電基板の前記一主面と後工程
で除去するセパレータ基板とを対向させ、前記突起電極
を前記セパレータ基板に押し当てる工程と、前記圧電基
板と前記セパレータ基板との間に液状の樹脂材料を流し
込む工程と、前記樹脂材料を硬化後に前記セパレータ基
板を除去する工程と、前記突起電極と電気的に導通がと
れるように前記樹脂材料の上に端子電極を設ける工程
と、を含むことを特徴とする。Further, according to the present invention, a plurality of comb-shaped electrodes for exciting a surface acoustic wave and a protruding electrode electrically connected to the comb-shaped electrode are provided on one main surface of the piezoelectric substrate. Forming, opposing the one main surface of the piezoelectric substrate and a separator substrate to be removed in a later step, and pressing the protruding electrode against the separator substrate, between the piezoelectric substrate and the separator substrate. A step of pouring a liquid resin material, a step of removing the separator substrate after curing the resin material, and a step of providing a terminal electrode on the resin material so as to be electrically connected to the projecting electrode. It is characterized by including.

【００１６】さらに、請求項９に記載の発明は、弾性表
面波を励振するための複数の櫛形電極と、前記櫛形電極
と電気的に接続された突起電極とを圧電基板の一主面上
に形成する工程と、後工程で除去するセパレータ基板、
或いは前記圧電基板の一主面、の上に液状の樹脂材料を
乗せる工程と、前記圧電基板の前記一主面と前記セパレ
ータ基板とを対向させ、前記突起電極を前記セパレータ
基板に押し当てる工程と、前記樹脂材料を硬化後にセパ
レータ基板を除去する工程と、前記突起電極と電気的に
導通がとれるように前記樹脂材料の上に端子電極を設け
る工程と、を含むことを特徴とする。Further, according to a ninth aspect of the present invention, a plurality of comb-shaped electrodes for exciting surface acoustic waves and a protruding electrode electrically connected to the comb-shaped electrode are provided on one main surface of the piezoelectric substrate. A forming step and a separator substrate to be removed in a later step,
Alternatively, a step of placing a liquid resin material on one main surface of the piezoelectric substrate, and a step of pressing the one main surface of the piezoelectric substrate and the separator substrate to face each other and pressing the projecting electrodes against the separator substrate. A step of removing the separator substrate after curing the resin material; and a step of providing a terminal electrode on the resin material so as to be electrically connected to the protruding electrode.

【００１７】さらに、請求項１０に記載の発明は、突起
電極と端子電極とを電気的に導通させる工程が超音波に
より接続される工程であることを特徴とする請求項６ま
たは請求項７に記載の弾性表面波装置の製造方法であ
る。Further, the invention according to claim 10 is the method according to claim 6 or 7, wherein the step of electrically connecting the protruding electrode and the terminal electrode is a step of connecting by ultrasonic waves. It is a manufacturing method of the surface acoustic wave device described.

【００１８】さらに、請求項１１に記載の発明は、突起
電極、及び端子電極の少なくとも前記突起電極と接触す
る部分、が金からなり、前記端子電極の金が電解めっき
で形成されることを特徴とする請求項１０に記載の弾性
表面波装置の製造方法である。Further, the invention according to claim 11 is characterized in that at least a portion of the protruding electrode and the terminal electrode which is in contact with the protruding electrode is made of gold, and the gold of the terminal electrode is formed by electrolytic plating. A method for manufacturing a surface acoustic wave device according to claim 10.

【００１９】さらに、請求項１２に記載の発明は、突起
電極と端子電極とを電気的に導通させる工程が、加熱に
よる金属溶融により接続される工程であることを特徴と
する請求項６または請求項７に記載の弾性表面波装置の
製造方法である。Furthermore, in the twelfth aspect of the present invention, the step of electrically connecting the protruding electrode and the terminal electrode is a step of connecting by melting a metal by heating. Item 8. A method for manufacturing a surface acoustic wave device according to item 7.

【００２０】さらに、請求項１３に記載の発明は、端子
電極とセパレータ基板が電気的に導通していることを特
徴とする請求項６または請求項７に記載の弾性表面波装
置の製造方法である。Further, according to a thirteenth aspect of the present invention, in the method of manufacturing a surface acoustic wave device according to the sixth or seventh aspect, the terminal electrode and the separator substrate are electrically connected. is there.

【００２１】さらに、請求項１４に記載の発明は、セパ
レータ基板が導電体であることを特徴とする請求項８ま
たは請求項９に記載の弾性表面波装置の製造方法であ
る。Further, the invention according to claim 14 is the method for manufacturing a surface acoustic wave device according to claim 8 or 9, wherein the separator substrate is a conductor.

【００２２】さらに、請求項１５に記載の発明は、圧電
基板がウエハである請求項６から請求項９のいずれかに
記載の弾性表面波装置の製造方法である。Further, the invention according to claim 15 is the method for manufacturing a surface acoustic wave device according to any one of claims 6 to 9, wherein the piezoelectric substrate is a wafer.

【００２３】[0023]

【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら説明する。Embodiments of the present invention will be described below with reference to the drawings.

【００２４】（実施の形態１）本実施の形態１では、本
発明の弾性表面波装置についての一例を、図１〜図３を
用いて説明する。図１において、（ａ）は本発明の弾性
表面波装置の断面図、（ｂ）は当該装置の上面図、
（ｃ）は圧電基板上の弾性表面波素子を説明する図であ
る。図２は本発明の弾性表面波装置の製造方法を示す図
であり、製造工程の各工程を断面図にて示している。図
３は端子電極部を形成する方法を説明する図であり、断
面図のみを示している。(Embodiment 1) In Embodiment 1, an example of a surface acoustic wave device according to the present invention will be described with reference to FIGS. 1, (a) is a cross-sectional view of the surface acoustic wave device of the present invention, (b) is a top view of the device,
(C) is a diagram illustrating a surface acoustic wave element on a piezoelectric substrate. FIG. 2 is a diagram showing a method of manufacturing the surface acoustic wave device according to the present invention, and shows each step of the manufacturing process in a cross-sectional view. FIG. 3 is a diagram for explaining a method of forming a terminal electrode portion, and shows only a cross-sectional view.

【００２５】以下に、本実施の形態１における弾性表面
波装置の構造を説明する。The structure of the surface acoustic wave device according to the first embodiment will be described below.

【００２６】１０１は圧電基板であり、例えば、大きさ
が１．５×１．０ｍｍで、厚みが０．３ｍｍである。但
し、ここでいう大きさとは、装置の２次元的な大きさを
指し、これは、他の実施の形態、実施例でも同様であ
る。圧電基板としては、例えば、タンタル酸リチウム、
ニオブ酸リチウム、水晶、ニオブ酸カリウム、ランガサ
イト等の単結晶圧電材料や、特定の基板上に酸化亜鉛、
窒化アルミニウム等の薄膜材料が設けられた圧電基板材
料が用いられるが、本実施の形態では、３６°Ｙカット
のタンタル酸リチウムを用いている。Reference numeral 101 denotes a piezoelectric substrate, for example, having a size of 1.5 × 1.0 mm and a thickness of 0.3 mm. However, the size here refers to the two-dimensional size of the device, and this is the same in other embodiments and examples. As the piezoelectric substrate, for example, lithium tantalate,
Single crystal piezoelectric materials such as lithium niobate, crystal, potassium niobate, and langasite, and zinc oxide,
Although a piezoelectric substrate material provided with a thin film material such as aluminum nitride is used, in this embodiment, a 36 ° Y-cut lithium tantalate is used.

【００２７】ここで、カット角度について図８を用いて
説明する。図８（ａ）は圧電単結晶をウエハに切断する
前の状態を示し、Ｘ、Ｙ、Ｚ軸が図に示した状態である
とする。ここで、圧電単結晶はＣ軸方向、つまり、Ｚ軸
方向に自発分極している。例えば、３６°Ｙカットタン
タル酸リチウムは、図８（ｂ）に示すように、Ｘ軸を回
転軸としてＹ軸を３６°回転させて新たにＹ’軸とし、
同時にＺ軸も３６°回転させてＺ’軸とした時、Ｙ’軸
を法線方向とするように、切断された基板である。Here, the cut angle will be described with reference to FIG. FIG. 8A shows a state before the piezoelectric single crystal is cut into a wafer, and the X, Y, and Z axes are in the states shown in the figure. Here, the piezoelectric single crystal is spontaneously polarized in the C-axis direction, that is, in the Z-axis direction. For example, as shown in FIG. 8 (b), a 36 ° Y-cut lithium tantalate has a new Y ′ axis by rotating the Y axis by 36 ° with the X axis as the rotation axis.
At the same time, the substrate is cut so that the Z ′ axis is rotated by 36 ° to be the Z ′ axis, and the Y ′ axis is the normal direction.

【００２８】１０２は弾性表面波を励振するための櫛型
電極である。図１（ｃ）では、片側３本の電極しか示し
ていないが、実際は、数十本以上の電極対が交互に交差
した形状となっている。また、図では、２つの櫛型電極
群しか示していないが、フィルタ等では、通常、このよ
うな櫛型電極群を複数配置し、素子を構成している。１
０３は圧電基板１０１上に設けられた電極パッド（図１
（ａ）断面図には図示なし）であり、この上に、突起電
極１０４が設けられる（破線部）。突起電極１０４は導
電性の材料なら良く、金、はんだ、銅、すず、鉛、銀、
等が選ばれ、これらの少なくとも１つ以上の成分を有す
る金属からなるものである。Reference numeral 102 denotes a comb-shaped electrode for exciting a surface acoustic wave. In FIG. 1C, only three electrodes on one side are shown, but in reality, several tens or more electrode pairs alternately intersect. Although only two comb-shaped electrode groups are shown in the drawing, a plurality of such comb-shaped electrode groups are usually arranged in a filter or the like to constitute an element. 1
Reference numeral 03 denotes an electrode pad provided on the piezoelectric substrate 101 (FIG. 1)
(A) is not shown in the sectional view), on which the protruding electrodes 104 are provided (broken line portions). The projecting electrode 104 may be any conductive material, such as gold, solder, copper, tin, lead, silver,
And the like, and are made of a metal having at least one of these components.

【００２９】１０５は端子電極である。この端子電極１
０５は、突起電極１０４との導通をとり、外部からの電
気信号の入出力用の電極である。１０６は樹脂基材等の
絶縁材料であり、圧電基板１０１と端子電極１０５の間
の空隙を埋めるように設けられている。１０７は弾性表
面波素子の機能領域であり、弾性表面波の伝播する領
域、つまり、櫛型電極１０２の配置された領域を指す。
１０８は空間形成部であり、機能領域１０７を保護する
ために設けられ、ドライフィルムレジスト等により形成
されている。なお、本実施の形態では圧電基板１０１と
端子電極１０５の間隔は６０μｍとなっている。Reference numeral 105 denotes a terminal electrode. This terminal electrode 1
Numeral 05 is an electrode for input / output of electrical signals from the outside, which conducts with the protruding electrode 104. Reference numeral 106 denotes an insulating material such as a resin base material, which is provided so as to fill a gap between the piezoelectric substrate 101 and the terminal electrode 105. Reference numeral 107 denotes a functional region of the surface acoustic wave element, which indicates a region where the surface acoustic wave propagates, that is, a region where the comb electrode 102 is arranged.
Reference numeral 108 denotes a space forming portion, which is provided to protect the functional region 107 and is formed of a dry film resist or the like. In this embodiment, the distance between the piezoelectric substrate 101 and the terminal electrode 105 is 60 μm.

【００３０】以上のような構造を採用することにより、
本実施の形態１による弾性表面波装置によれば、以下の
ような効果がある。By adopting the above structure,
The surface acoustic wave device according to the first embodiment has the following effects.

【００３１】配線基板が必要ないため、従来の装置より
もさらに低背化することが可能である。また、突起電極
１０４と端子電極１０５を一直線上に、かつ、直接導通
させるため、素子の小型化、低背化が可能となる。ま
た、絶縁材料１０６が薄く、体積も小さくできるため、
樹脂基材１０６の効果収縮や硬化後の熱応力による装置
の反りを大幅に軽減でき、半田リフロー等による他の配
線基板への実装（以下、２次実装）が容易になり信頼性
が向上する。また、同様の理由により、電極パッド１０
３と突起電極１０４との接続部、および突起電極１０４
と端子電極１０５との接続部の残留応力を小さくでき、
熱衝撃試験、落下試験などに対する耐性が上がる。従っ
て、２次実装後の信頼性が大幅に向上する。Since no wiring board is required, the height can be further reduced as compared with the conventional device. In addition, since the protruding electrode 104 and the terminal electrode 105 are directly conducted on a straight line, the size and height of the element can be reduced. Further, since the insulating material 106 is thin and the volume can be reduced,
The warpage of the device due to the effective shrinkage of the resin base material 106 and the thermal stress after curing can be greatly reduced, and the mounting on another wiring substrate by solder reflow or the like (hereinafter, secondary mounting) is facilitated and the reliability is improved. . For the same reason, the electrode pad 10
3 and the protruding electrode 104, and the protruding electrode 104
Residual stress at the connection between the electrode and the terminal electrode 105 can be reduced,
Increased resistance to thermal shock test, drop test, etc. Therefore, the reliability after the secondary mounting is greatly improved.

【００３２】また、端子電極１０５の下面を樹脂基材１
０６の下面と同一面か、或いは、樹脂基材１０６の下面
よりも窪んだ状態とすることで、２次実装後の配線基板
と弾性表面波装置の間の空隙を小さくすることができ、
更なる、低背化が可能となる。また、２次実装後に、樹
脂により配線基板をモールドした場合でも、配線基板と
弾性表面波装置の間の空隙が小さいため、吸湿試験後に
続けてリフロー試験を行うような試験（以下、吸湿リフ
ロー試験）に対する耐性が上がり、装置の信頼性が向上
する。The lower surface of the terminal electrode 105 is
06, or in a state recessed from the lower surface of the resin base material 106, it is possible to reduce the gap between the wiring board after the secondary mounting and the surface acoustic wave device,
Further reduction in height is possible. Further, even when the wiring board is molded with resin after the secondary mounting, since the gap between the wiring board and the surface acoustic wave device is small, a test in which a reflow test is performed after the moisture absorption test (hereinafter, a moisture absorption reflow test). ) Is increased, and the reliability of the device is improved.

【００３３】なお、２次実装時の配線基板は、携帯電話
等で用いられる通常のプリント基板であっても良いし、
特定の素子のみ搭載された基板であっても良い。後者の
場合、例えば、セラミックの積層フィルタを構成した素
子上の表層に、半導体装置や、本実施の形態の弾性表面
波装置等を実装する端子を設けて基板とした場合があ
る。これは、いわゆる高周波モジュールと呼ばれる装置
で、本実施の形態のような小型、低背の可能な装置を実
装することで、高周波モジュールの小型、低背化が可能
となる。The wiring board at the time of the secondary mounting may be a normal printed board used for a mobile phone or the like,
A substrate on which only specific elements are mounted may be used. In the latter case, for example, there is a case where a terminal is provided on a surface layer of an element constituting a ceramic laminated filter to mount a semiconductor device, the surface acoustic wave device of the present embodiment, or the like, to form a substrate. This is a device called a so-called high-frequency module. By mounting a device that can be small and low as in this embodiment, the high-frequency module can be reduced in size and height.

【００３４】なお、以上説明した弾性表面波装置は本発
明の弾性表面波装置の一例であり、本発明の弾性表面波
装置は、以下の実施例で説明するように他の様々な形態
を含む。The surface acoustic wave device described above is an example of the surface acoustic wave device of the present invention, and the surface acoustic wave device of the present invention includes various other forms as described in the following embodiments. .

【００３５】（実施の形態２）本実施の形態２では、本
発明の弾性表面波装置の製造方法についての一例を、図
２を用いて説明する。(Embodiment 2) In Embodiment 2, an example of a method for manufacturing a surface acoustic wave device according to the present invention will be described with reference to FIG.

【００３６】圧電基板１０１上に、スパッタリンング、
フォトリソグラフィー等を用いて、櫛型電極１０２，電
極パッド１０３の電極を形成する（図示なし）。櫛型電
極１０２の電極材料としては、アルミニウムやアルミニ
ウム合金、例えば、銅とアルミニウム、スカンジウムと
銅とアルミニウム等の合金が用いられる。次に、図２
（ａ）のように、ドライフィルムレジストをラミネート
し、フォトリソグラフィーを用いて、パターニングし、
空間形成部１０８を設ける。次に、図２（ｂ）のよう
に、圧電基板１０１上に突起電極１０４を設ける。本実
施の形態では、金ワイヤーをボールボンディングし、引
きちぎることにより、金バンプを形成し、突起電極とし
た。この突起電極の形成方法は、半田バンプによる方
法、半田、銅などの金属ボールを用いる方法、メッキに
よる方法などを用いても良い。Sputtering on the piezoelectric substrate 101,
The electrodes of the comb-shaped electrode 102 and the electrode pad 103 are formed using photolithography or the like (not shown). As an electrode material of the comb-shaped electrode 102, aluminum or an aluminum alloy, for example, an alloy such as copper and aluminum, scandium, copper, and aluminum is used. Next, FIG.
As shown in (a), a dry film resist is laminated and patterned using photolithography.
A space forming unit 108 is provided. Next, as shown in FIG. 2B, a protruding electrode 104 is provided on the piezoelectric substrate 101. In the present embodiment, a gold bump is formed by ball bonding and tearing a gold wire to form a protruding electrode. As a method for forming the protruding electrodes, a method using a solder bump, a method using a metal ball such as solder or copper, a method using plating, or the like may be used.

【００３７】次に、図２（ｃ）のように、セパレータ部
材１０９上に端子電極１０５がパターニングされた基板
上に、突起電極１０４を超音波を加えながら押し当てて
突起電極１０４及び端子電極１０５を電気的に接続す
る。このセパレータ部材１０９と端子電極１０５からな
る端子電極の形成された基板の製造方法については後述
する。次に、図２（ｄ）のように、アンダーフィル材を
圧電基板１０１及び端子電極１０５の空隙に流し込み、
硬化させて樹脂基材１０６とし、セパレータ部材１０９
を除去する。したがって、最終的に製造された弾性表面
波装置には、端子電極１０５に対して当該装置の反対側
（アンダーフィル材が存在しない側）には基板（セパレ
ータ部材）は存在しない。Next, as shown in FIG. 2C, the projecting electrode 104 is pressed against the substrate on which the terminal electrode 105 is patterned on the separator member 109 while applying ultrasonic waves to the projecting electrode 104 and the terminal electrode 105. Are electrically connected. A method for manufacturing a substrate on which a terminal electrode including the separator member 109 and the terminal electrode 105 is formed will be described later. Next, as shown in FIG. 2D, an underfill material is poured into the gap between the piezoelectric substrate 101 and the terminal electrode 105,
The resin base material is cured to form a separator member 109.
Is removed. Therefore, in the surface acoustic wave device finally manufactured, the substrate (separator member) does not exist on the side opposite to the terminal electrode 105 (the side where the underfill material does not exist).

【００３８】次に、端子電極の形成された基板の製造方
法について、図３を用いて説明する。図３（ａ）のよう
に、セパレータ部材１０９上に、電極１１０が全面に渡
って形成される。電極１１０は金属材料からなり、例え
ば銅である。また、セパレータ部材１０９は特に材質に
は制限はなく、例えば銅である。ここで、電極１１０と
セパレータ部材１０９の間には、後の工程で分離しやす
いように、薄い離型層を設けておく（図示なし）。次に
図３（ｂ）のように、基板上にフォトリソグラフィーに
より、ドライフィルムレジスト１１２をパターニングす
る。Next, a method of manufacturing a substrate on which terminal electrodes are formed will be described with reference to FIG. As shown in FIG. 3A, the electrode 110 is formed on the entire surface of the separator member 109. The electrode 110 is made of a metal material, for example, copper. The material of the separator member 109 is not particularly limited, and is, for example, copper. Here, a thin release layer is provided between the electrode 110 and the separator member 109 so as to be easily separated in a later step (not shown). Next, as shown in FIG. 3B, a dry film resist 112 is patterned on the substrate by photolithography.

【００３９】次に図３（ｃ）のように、電極１１０上に
メッキにより、電極１１１を設ける。電極１１１は後工
程で突起電極１０４との超音波接続を行うため、ニッケ
ル、金の順に積層されたものである。この時のメッキは
電解メッキ法を用いて行った。本実施の形態の場合、電
極１１１を電気的にショートしておかなくても良く、工
程の簡略化が図れる。また、電解メッキ法により、電極
１１１の金部分の厚みを厚くできるため、超音波接続の
際のセパレータ部材１０９、及び、剥離層を導電性の材
料で構成しているため、電極接合強度を大幅に上昇させ
ることが可能となる。なお、この金属の材料、及び、接
続方式はこれに限定されるものではない。次に、図３
（ｄ）のようにドライフィルム１１２を除去し、図３
（ｅ）のように、電極１１０をエッチングする。Next, as shown in FIG. 3C, an electrode 111 is provided on the electrode 110 by plating. The electrode 111 is laminated in order of nickel and gold in order to perform ultrasonic connection with the protruding electrode 104 in a later step. The plating at this time was performed using an electrolytic plating method. In the case of this embodiment, the electrode 111 does not need to be electrically short-circuited, and the process can be simplified. In addition, since the thickness of the gold portion of the electrode 111 can be increased by the electrolytic plating method, the separator member 109 and the peeling layer at the time of ultrasonic connection are formed of a conductive material. Can be raised. The material of the metal and the connection method are not limited to these. Next, FIG.
The dry film 112 is removed as shown in FIG.
As shown in (e), the electrode 110 is etched.

【００４０】以上の工程により、端子電極の形成された
基板が完成する。ここで、電極１１０のエッチングで、
セパレート部材１０９もエッチング可能としておくと、
セパレート部材１０９も同時にエッチングできる。この
エッチング量を制御することで、実施の形態１で説明し
た端子電極１０５が樹脂基材１０６の下面よりも窪んだ
状態に制御することが容易に可能となる。また、エッチ
ングしないことで、同一面とすることも容易にできる。
これにより、２次実装時の半田による端子間のショート
の不具合が軽減される。例えば、本実施の形態では、端
子電極１０５と樹脂基材１０６の下面の段差が５μm程
度になるように制御している。Through the above steps, the substrate on which the terminal electrodes are formed is completed. Here, by etching the electrode 110,
If the separate member 109 is also capable of being etched,
Separate member 109 can also be etched at the same time. By controlling the amount of etching, it is possible to easily control the terminal electrode 105 described in the first embodiment so as to be recessed from the lower surface of the resin base material 106. In addition, the same surface can be easily formed by not etching.
As a result, short-circuiting between terminals due to solder during secondary mounting is reduced. For example, in the present embodiment, control is performed so that the step between the terminal electrode 105 and the lower surface of the resin base material 106 is about 5 μm.

【００４１】なお、本実施の形態２の製造方法は本発明
の製造方法の一例であり、本発明の製造方法は以下の実
施例で説明するように他の形態を含む。本発明の製造方
法では、圧電基板、櫛形電極、電極パッド、突起電極、
絶縁材料、端子電極として、実施の形態１で説明したも
のを用いることができる。The manufacturing method of the second embodiment is an example of the manufacturing method of the present invention, and the manufacturing method of the present invention includes other embodiments as described in the following examples. In the manufacturing method of the present invention, a piezoelectric substrate, a comb-shaped electrode, an electrode pad, a protruding electrode,
As the insulating material and the terminal electrode, those described in Embodiment 1 can be used.

【００４２】以上説明した実施の形態により、簡易な方
法で、小型、低背の弾性表面波装置を製造でき、素子の
低コスト化が実現できる。According to the above-described embodiment, a small and low-profile surface acoustic wave device can be manufactured by a simple method, and the cost of the element can be reduced.

【００４３】以下に、本発明の実施例を説明する。An embodiment of the present invention will be described below.

【００４４】（実施の形態３）本発明の弾性表面波装置
の実施の形態３を図４を用いて説明する。なお本実施の
形態は、既に詳述した実施の形態１（図１）と同様の構
成をしており、ここではその相違する点のみについて行
うこととする。図４において、１１３は樹脂材料であ
り、圧電基板１０１を覆うようにして設けられている。
その他の構成は図１と同じである。これにより、実施の
形態１で説明した硬化に加え、落下による耐衝撃性があ
がる。また、熱容量が増えるため、櫛型電極１０２の焦
電破壊が軽減される。また、圧電基板１０１を全体にわ
たって樹脂材料で覆うことになり、装置の反りが軽減さ
れ、２次実装時の不良を軽減させる効果がある。Embodiment 3 A surface acoustic wave device according to Embodiment 3 of the present invention will be described with reference to FIG. This embodiment has the same configuration as that of Embodiment 1 (FIG. 1) already described in detail, and here, only the differences will be described. In FIG. 4, reference numeral 113 denotes a resin material, which is provided so as to cover the piezoelectric substrate 101.
Other configurations are the same as those in FIG. Thereby, in addition to the curing described in the first embodiment, the impact resistance due to the drop is increased. Further, since the heat capacity increases, pyroelectric breakdown of the comb-shaped electrode 102 is reduced. In addition, since the piezoelectric substrate 101 is entirely covered with the resin material, the warpage of the device is reduced, and there is an effect of reducing defects during secondary mounting.

【００４５】（実施の形態４）本発明の弾性表面波装置
の実施の形態４を図５を用いて説明する。本実施の形態
も、既に詳述した実施の形態１（図１）と同様の構成を
しており、ここではその相違する点のみについて行うこ
ととする。本実施の形態は、図１と図５を対比すると明
らかなように、図１の示す端子電極１０５、樹脂基材１
０６の側部を切り取ったものである。従って、実施の形
態１よりも、更に、モジュール（装置）としての小型化
が可能となる。また、このような小型化により、装置の
反りも実施の形態１よりも更に軽減される。Embodiment 4 A surface acoustic wave device according to Embodiment 4 of the present invention will be described with reference to FIG. This embodiment also has a configuration similar to that of Embodiment 1 (FIG. 1) already described in detail, and here, only the differences will be described. In this embodiment, as is apparent from a comparison between FIG. 1 and FIG. 5, the terminal electrode 105 and the resin substrate 1 shown in FIG.
06 is cut out from the side. Therefore, it is possible to further reduce the size of the module (device) as compared with the first embodiment. Further, due to such miniaturization, the warpage of the device is further reduced than in the first embodiment.

【００４６】（実施の形態５）本発明の弾性表面波装置
の製造方法について、他の実施の形態を説明する。なお
本実施の形態は、既に詳述した実施の形態２（図２）と
同様の構成をしており、ここではその相違する点のみに
ついて行うこととする。本実施の形態では、突起電極１
０４は金バンプとし、端子電極１０５をすず電極とし
た。このような電極にて、図２（ｃ）で説明した工程に
おいて、突起電極１０４と端子電極１０５の接続を行う
前に、液状の樹脂である絶縁材料１０６をセパレータ部
材１０９、及び端子電極１０５の上に流し、その状態
で、突起電極１０４を端子電極１０５に、超音波を加え
ながら押し当てる。この時、同時に、温度も加え、超音
波接続を完了させる。なお、この時、樹脂の硬化も同時
に行った。(Embodiment 5) Another embodiment of the method of manufacturing a surface acoustic wave device according to the present invention will be described. The present embodiment has the same configuration as that of Embodiment 2 (FIG. 2) already described in detail, and here, only the differences will be described. In the present embodiment, the projection electrode 1
04 was a gold bump, and the terminal electrode 105 was a tin electrode. In the process described with reference to FIG. 2C, before connecting the protruding electrode 104 and the terminal electrode 105 with such an electrode, an insulating material 106 that is a liquid resin is applied to the separator member 109 and the terminal electrode 105. Then, the protruding electrode 104 is pressed against the terminal electrode 105 while applying ultrasonic waves. At this time, the temperature is also added at the same time to complete the ultrasonic connection. At this time, the resin was also cured at the same time.

【００４７】このように、本実施の形態では、実施の形
態２で説明した製造方法とは異なり、狭い空隙に絶縁材
料１０６を流し込む必要がなくなるため、空間形成部１
０８とセパレータ部材１０９の間隔を非常に小さくする
ことが容易となり、装置の更なる低背化が可能となる。
また、製造のタクトを短くすることができ、装置の低コ
スト化につながる。As described above, in the present embodiment, unlike the manufacturing method described in the second embodiment, there is no need to pour the insulating material 106 into the narrow gap.
08 and the separator member 109 can be very easily reduced, and the height of the apparatus can be further reduced.
In addition, manufacturing tact time can be shortened, which leads to cost reduction of the device.

【００４８】（実施の形態６）本発明の弾性表面波装置
の製造方法について、他の実施の形態を図６を用いて説
明する。なお本実施の形態は、既に詳述した実施の形態
２（図２）と同様の構成をしており、ここではその相違
する点のみについて行うこととする。本実施の形態で
は、図１に示した圧電基板１０１、櫛型電極１０２、電
極パッド１０３、突起電極１０４からなる弾性表面素子
を図６のように複数個実装し、セパレータ部材１０９を
除去した後、ダイシングにより個々の装置に切断する。
但し、図６はセパレータ部材１０９を除去した工程後の
形状を示しており、破線は、この後でダイシングされる
部分である。この方法により、実施の形態４（図５）で
説明した弾性表面波装置を容易に製造できる。すなわ
ち、本実施の形態の如く、装置を個別に単体で製造する
のではなく、複数個の装置を同時に一括して製造するこ
とにより、絶縁材料１０６の注入工程、セパレータ部材
１０９の除去工程を一括ででき、低コスト化が可能とな
る、等の優れた効果がある。なお、絶縁材料１０６に関
しては、圧電基板１０１とセパレータ部材１０９の空隙
に注入する材料と、圧電基板１０１の全面を覆う材料と
を異なるものとしても良い。また、図１のように、圧電
基板１０１を覆わないようにしても良い。なお、図６に
おいては、装置が２つ分のみの例を示したが、実際は複
数個の装置が２次元的に配置された形態となる。(Embodiment 6) Another embodiment of the method of manufacturing a surface acoustic wave device according to the present invention will be described with reference to FIG. The present embodiment has the same configuration as that of Embodiment 2 (FIG. 2) already described in detail, and here, only the differences will be described. In the present embodiment, after a plurality of elastic surface elements including the piezoelectric substrate 101, the comb-shaped electrodes 102, the electrode pads 103, and the protruding electrodes 104 shown in FIG. 1 are mounted as shown in FIG. And cut into individual devices by dicing.
However, FIG. 6 shows the shape after the step of removing the separator member 109, and the broken line indicates a portion to be diced thereafter. By this method, the surface acoustic wave device described in the fourth embodiment (FIG. 5) can be easily manufactured. That is, instead of manufacturing the devices individually as in this embodiment, a plurality of devices are manufactured simultaneously and collectively, so that the step of injecting the insulating material 106 and the step of removing the separator member 109 are collectively performed. And has an excellent effect that cost can be reduced. As for the insulating material 106, the material to be injected into the gap between the piezoelectric substrate 101 and the separator member 109 may be different from the material that covers the entire surface of the piezoelectric substrate 101. Further, as shown in FIG. 1, the piezoelectric substrate 101 may not be covered. Although FIG. 6 shows an example in which only two devices are provided, in practice, a plurality of devices are two-dimensionally arranged.

【００４９】（実施の形態７）本発明の弾性表面波装置
の製造方法について、他の実施の形態を図７を用いて説
明する。本実施の形態では、圧電基板１０１、櫛型電極
１０２、電極パッド１０３、突起電極１０４が形成され
たウエハの状態で工程を進めていく点が実施の形態２と
異なり、その他については同様である。セパレータ部材
１０９を除去した後、ダイシングにより個々の装置に切
断する。また、突起電極１０４には、半田バンプを用
い、セパレータ部材１０９除去後、リフロー工程におい
て、突起電極１０４と端子電極１０５の最終接続を行っ
ている。(Embodiment 7) Another embodiment of the method of manufacturing a surface acoustic wave device according to the present invention will be described with reference to FIG. The present embodiment is different from the second embodiment in that the process proceeds in the state of the wafer on which the piezoelectric substrate 101, the comb-shaped electrodes 102, the electrode pads 103, and the protruding electrodes 104 are formed, and the other configurations are the same. . After removing the separator member 109, it is cut into individual devices by dicing. Further, solder bumps are used for the protruding electrodes 104, and after the separator member 109 is removed, the final connection between the protruding electrodes 104 and the terminal electrodes 105 is performed in a reflow process.

【００５０】以上のように本実施の形態の製造方法によ
り、ウエハ単位での一括処理が可能となり、製造コスト
の大幅な削減を図ることができる。As described above, according to the manufacturing method of the present embodiment, batch processing can be performed for each wafer, and the manufacturing cost can be greatly reduced.

【００５１】（実施の形態８）本発明の弾性表面波装置
の製造方法について、他の実施の形態を図９を用いて説
明する。但し、図９は簡略的に、ウエハ中の一つの装置
のみを示した図であり、図７でいう破線部で仕切られた
部分のみを示した図である。(Embodiment 8) Another embodiment of the method of manufacturing a surface acoustic wave device according to the present invention will be described with reference to FIG. However, FIG. 9 is a diagram simply showing only one device in the wafer, and is a diagram showing only a portion partitioned by a broken line portion in FIG.

【００５２】まず、図９（ａ）にの如く、実施の形態２
（図２）で説明したように、空間形成部１０８を形成す
る。次に、図９（ｂ）のように、金からなる突起電極１
０４を設ける。次に、図９（ｃ）のように、セパレータ
部材１０９に突起電極１０４を押し付ける。この工程に
より、突起電極１０４の先端は変形して平坦になる。更
に、圧電基板１０１とセパレータ部材１０９の間隙に樹
脂１０６を注入し、硬化させる。First, as shown in FIG.
As described in FIG. 2, the space forming part 108 is formed. Next, as shown in FIG. 9B, the protruding electrode 1 made of gold is used.
04 is provided. Next, as shown in FIG. 9C, the protruding electrode 104 is pressed against the separator member 109. By this step, the tip of the protruding electrode 104 is deformed and flattened. Further, the resin 106 is injected into the gap between the piezoelectric substrate 101 and the separator member 109 and is cured.

【００５３】次に、図９（ｄ）のように、セパレータ部
材１０９を除去する。セパレータ部材１０９が除去され
た面には、樹脂１０６で囲まれた突起電極１０４の平坦
部が露出した状態となる。次に、図９（ｅ）のように、
突起電極１０４の露出部分と少なくとも一部が交差する
ように端子電極１０５を形成する。端子電極１０５はス
パッタリングにより形成した。Next, as shown in FIG. 9D, the separator member 109 is removed. The flat portion of the protruding electrode 104 surrounded by the resin 106 is exposed on the surface from which the separator member 109 has been removed. Next, as shown in FIG.
The terminal electrode 105 is formed so that at least a part of the projection electrode 104 intersects with the exposed portion. The terminal electrode 105 was formed by sputtering.

【００５４】なお、端子電極１０５は、真空蒸着等の他
の成膜方法や、導電性樹脂などを印刷、焼成による形成
方法や、メッキによる形成方法を用いても良い。また、
それらの工法を複数組み合わせた方法、例えば、スパッ
タリングで形成した薄膜電極上に、更に、印刷、焼成に
より厚膜電極を形成する方法を用いても良い。本実施形
態によれば、実装時の端子電極１０５と突起電極１０４
の位置合わせが必要なく、製造工程が容易になり、ま
た、タクトもあがって製造コストを下げることが可能と
なる。The terminal electrode 105 may be formed by another film forming method such as vacuum evaporation, a method of printing and baking a conductive resin or the like, or a method of forming by plating. Also,
A method combining a plurality of these methods, for example, a method of forming a thick-film electrode by printing and firing on a thin-film electrode formed by sputtering may be used. According to this embodiment, the terminal electrode 105 and the protruding electrode 104 during mounting are provided.
No alignment is required, the manufacturing process is simplified, and the manufacturing cost can be reduced due to an increase in tact time.

【００５５】以上説明した製造方法により、突起電極１
０４と端子電極１０５の接続工程がなくなる。この工程
は、通常は、加熱、或いは加圧、或いは超音波印加、或
いはそれらの組み合わせにより行うことが多く、素子に
ダメージを与える場合がある。例えば、圧電基板１０１
のサイズが大きい場合や、絶縁材料１０６の弾性率が大
きい場合に素子にダメージを与えることがあるが、本発
明の実施形態の方法によればそのような問題は生じな
い。According to the manufacturing method described above, the protruding electrode 1
This eliminates the step of connecting the terminal electrode 105 to the terminal electrode 105. This step is usually performed by heating, pressurizing, applying ultrasonic waves, or a combination thereof, and may damage the element. For example, the piezoelectric substrate 101
The element may be damaged when the size of the element is large or when the elastic modulus of the insulating material 106 is large, but such a problem does not occur according to the method of the embodiment of the present invention.

【００５６】なお、以上説明した実施の形態では、ウエ
ハ単位、或いは装置単位、或いは、複数の装置群の製造
方法を説明したが、本発明は上述した各々の説明に限定
されるものではなく、どのような単位で製造しても構わ
ない。In the above-described embodiment, a method of manufacturing a wafer unit, a device unit, or a plurality of device groups has been described. However, the present invention is not limited to the above description. It may be manufactured in any unit.

【００５７】[0057]

【発明の効果】以上、詳述した説明より明らかなよう
に、本発明の弾性表面波装置及びその製造方法によれ
ば、従来の装置では困難であった、装置の小面積化、低
背化といった装置の一層の小型化を実現し、更には、低
コスト化、信頼性の確保を実現することができるもので
あり、その工業的価値は大なるものがある。As is apparent from the above detailed description, according to the surface acoustic wave device and the method of manufacturing the same of the present invention, it is difficult to reduce the area and height of the device, which is difficult with the conventional device. It is possible to realize further miniaturization of such a device, and further, to realize cost reduction and to ensure reliability, and its industrial value is great.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の弾性表面波装置の実施の形態（実施の
形態１）を示す構造図FIG. 1 is a structural diagram showing an embodiment (Embodiment 1) of a surface acoustic wave device according to the present invention.

【図２】本発明の弾性表面波装置の製造方法の実施の形
態（実施の形態２）を説明する製造工程図FIG. 2 is a manufacturing process diagram illustrating an embodiment (Embodiment 2) of a method for manufacturing a surface acoustic wave device according to the present invention.

【図３】本発明の弾性表面波装置の製造方法の実施の形
態（実施の形態２）を説明する製造工程図FIG. 3 is a manufacturing process diagram illustrating an embodiment (Embodiment 2) of a method for manufacturing a surface acoustic wave device according to the present invention.

【図４】本発明の弾性表面波装置の実施の形態（実施の
形態３）を示す構造図FIG. 4 is a structural diagram showing an embodiment (Embodiment 3) of the surface acoustic wave device of the present invention.

【図５】本発明の弾性表面波装置の実施の形態（実施の
形態４）を示す構造図FIG. 5 is a structural diagram showing an embodiment (Embodiment 4) of the surface acoustic wave device of the present invention.

【図６】本発明の弾性表面波装置の製造方法の実施の形
態（実施の形態６）を説明するための構造図FIG. 6 is a structural diagram for explaining an embodiment (Embodiment 6) of the method for manufacturing a surface acoustic wave device according to the present invention.

【図７】本発明の弾性表面波装置の製造方法の実施の形
態（実施の形態７）を説明するための構造図FIG. 7 is a structural diagram for explaining an embodiment (Embodiment 7) of the method for manufacturing a surface acoustic wave device according to the present invention.

【図８】圧電単結晶をウエハにする前においてカット角
度を説明する図FIG. 8 is a diagram illustrating a cut angle before a piezoelectric single crystal is formed into a wafer.

【図９】本発明の弾性表面波装置の製造方法の実施の形
態（実施の形態８）を説明するための製造工程図FIG. 9 is a manufacturing process diagram for explaining an embodiment (Embodiment 8) of the method for manufacturing a surface acoustic wave device according to the present invention.

【図１０】従来の弾性表面波装置を示す構造図FIG. 10 is a structural diagram showing a conventional surface acoustic wave device.

【図１１】他の従来の弾性表面波装置を示す構造図FIG. 11 is a structural view showing another conventional surface acoustic wave device.

【符号の説明】[Explanation of symbols]

１０１ 圧電基板 １０２ 櫛型電極 １０３ 電極パッド １０４ 突起電極 １０５ 端子電極 １０６ 絶縁材料 １０７ 機能領域 １０８ 空間形成部 １０９ セパレータ部材 １１０ 電極 １１１ 電極 １１２ ドライフィルム DESCRIPTION OF SYMBOLS 101 Piezoelectric substrate 102 Comb electrode 103 Electrode pad 104 Projection electrode 105 Terminal electrode 106 Insulating material 107 Functional area 108 Space forming part 109 Separator member 110 Electrode 111 Electrode 112 Dry film

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０３Ｈ 3/08 (72)発明者 菅谷 康博 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 守時 克典 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 Ｆターム(参考） 4M109 AA02 BA07 CA05 CA26 DB15 EE01 GA10 5F061 AA02 BA07 CA05 CA26 CB02 CB04 CB13 5J097 AA25 AA29 AA34 DD24 FF03 HA02 HA04 HA09 JJ04 KK10──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H03H 3/08 (72) Inventor Yasuhiro Sugaya 1006 Ojidoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd. (72 Inventor Katsunori Morikiki 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture F-term (reference) 4M109 AA02 BA07 CA05 CA26 DB15 EE01 GA10 5F061 AA02 BA07 CA05 CA26 CB02 CB04 CB13 5J097 AA25 HA04 HA04 JJ04 KK10

Claims (15)

【特許請求の範囲】[Claims] 【請求項１】圧電基板と、前記圧電基板の一主面上に設
けられた弾性表面波を励振するための櫛型電極と、前記
櫛型電極部に設けられた空間形成部と、前記圧電基板の
前記一主面上に設けられた複数の突起電極と、前記圧電
基板の前記一主面と対向して設けられた端子電極とから
なり、前記突起電極と前記端子電極が直接電気的に接続
されており、前記圧電基板と前記端子電極間に絶縁材料
が充填されていることを特徴とする弾性表面波装置。A piezoelectric substrate, a comb-shaped electrode provided on one main surface of the piezoelectric substrate for exciting a surface acoustic wave, a space forming portion provided in the comb-shaped electrode portion, and the piezoelectric substrate. A plurality of protruding electrodes provided on the one main surface of the substrate, and a terminal electrode provided facing the one main surface of the piezoelectric substrate, wherein the protruding electrodes and the terminal electrodes are directly electrically connected. A surface acoustic wave device connected to the piezoelectric substrate and filled with an insulating material between the piezoelectric substrate and the terminal electrode. 【請求項２】突起電極の電極材料が、金、すず、銅、
鉛、銀の群から選ばれる少なくとも１つ以上の成分を有
する金属からなることを特徴とする請求項１記載の弾性
表面波装置。2. An electrode material of a protruding electrode is gold, tin, copper,
2. The surface acoustic wave device according to claim 1, comprising a metal having at least one component selected from the group consisting of lead and silver. 【請求項３】少なくとも櫛型電極部分に空間形成がなさ
れていることを特徴とする請求項１記載の弾性表面波装
置。3. The surface acoustic wave device according to claim 1, wherein a space is formed at least in a comb-shaped electrode portion. 【請求項４】圧電基板の一主面とは反対の主面が樹脂材
料で覆われていることを特徴とする請求項１記載の弾性
表面波装置。4. The surface acoustic wave device according to claim 1, wherein a main surface opposite to one main surface of the piezoelectric substrate is covered with a resin material. 【請求項５】端子電極が絶縁材料の面よりも窪んでいる
ことを特徴とする請求項１記載の弾性表面波装置。5. The surface acoustic wave device according to claim 1, wherein the terminal electrode is recessed from the surface of the insulating material. 【請求項６】弾性表面波を励振するための複数の櫛形電
極と、前記櫛形電極と電気的に接続された突起電極とを
圧電基板の一主面上に形成する工程と、 前記圧電基板の前記一主面と、端子電極が形成されたセ
パレータ基板とを対向させ、前記突起電極と前記端子電
極とを電気的に導通させる工程と、 前記圧電基板と前記セパレータ基板との間に液状の樹脂
材料を流し込む工程と、 前記樹脂材料を硬化後に前記セパレータ基板を除去する
工程と、を含むことを特徴とする弾性表面波装置の製造
方法。6. A step of forming, on one main surface of a piezoelectric substrate, a plurality of comb-shaped electrodes for exciting surface acoustic waves, and a protruding electrode electrically connected to the comb-shaped electrodes; A step of causing the one main surface and the separator substrate on which the terminal electrode is formed to face each other, and electrically connecting the protruding electrode and the terminal electrode; and forming a liquid resin between the piezoelectric substrate and the separator substrate. A method of manufacturing a surface acoustic wave device, comprising: a step of pouring a material; and a step of removing the separator substrate after curing the resin material. 【請求項７】弾性表面波を励振するための複数の櫛形電
極と、前記櫛形電極と電気的に接続された突起電極とを
圧電基板の一主面上に形成する工程と、 端子電極が形成されたセパレータ基板上に液状の樹脂材
料を乗せる工程と、 前記圧電基板の前記一主面と、前記樹脂材料が乗せられ
た前記セパレータ基板とを対向させ、前記突起電極と前
記端子電極とを電気的に導通させる工程と、 前記樹脂材料を硬化後にセパレータ基板を除去する工程
と、を含むことを特徴とする弾性表面波装置の製造方
法。7. A step of forming, on one main surface of a piezoelectric substrate, a plurality of comb-shaped electrodes for exciting surface acoustic waves, and protruding electrodes electrically connected to the comb-shaped electrodes, and forming a terminal electrode. Placing a liquid resin material on the separated separator substrate, facing the one main surface of the piezoelectric substrate and the separator substrate on which the resin material is placed, and electrically connecting the protruding electrodes and the terminal electrodes. A method of manufacturing a surface acoustic wave device, comprising: a step of electrically conducting the conductive material; and a step of removing the separator substrate after the resin material is cured. 【請求項８】弾性表面波を励振するための複数の櫛形電
極と、前記櫛形電極と電気的に接続された突起電極とを
圧電基板の一主面上に形成する工程と、 前記圧電基板の前記一主面と後工程で除去するセパレー
タ基板とを対向させ、前記突起電極を前記セパレータ基
板に押し当てる工程と、 前記圧電基板と前記セパレータ基板との間に液状の樹脂
材料を流し込む工程と、 前記樹脂材料を硬化後に前記セパレータ基板を除去する
工程と、 前記突起電極と電気的に導通がとれるように前記樹脂材
料の上に端子電極を設ける工程と、を含むことを特徴と
する弾性表面波装置の製造方法。8. A step of forming, on one main surface of a piezoelectric substrate, a plurality of comb-shaped electrodes for exciting surface acoustic waves, and a projecting electrode electrically connected to the comb-shaped electrodes; A step of causing the one main surface and a separator substrate to be removed in a later step to face each other, and pressing the protruding electrode against the separator substrate; and pouring a liquid resin material between the piezoelectric substrate and the separator substrate, Removing the separator substrate after curing the resin material; and providing a terminal electrode on the resin material so as to be electrically connected to the protruding electrode. Device manufacturing method. 【請求項９】弾性表面波を励振するための複数の櫛形電
極と、前記櫛形電極と電気的に接続された突起電極とを
圧電基板の一主面上に形成する工程と、 後工程で除去するセパレータ基板、或いは前記圧電基板
の一主面、の上に液状の樹脂材料を乗せる工程と、 前記圧電基板の前記一主面と前記セパレータ基板とを対
向させ、前記突起電極を前記セパレータ基板に押し当て
る工程と、 前記樹脂材料を硬化後に前記セパレータ基板を除去する
工程と、 前記突起電極と電気的に導通がとれるように前記樹脂材
料の上に端子電極を設ける工程と、を含むことを特徴と
する弾性表面波装置の製造方法。9. A step of forming, on one main surface of a piezoelectric substrate, a plurality of comb-shaped electrodes for exciting surface acoustic waves, and a protruding electrode electrically connected to the comb-shaped electrodes; Placing a liquid resin material on the separator substrate or one main surface of the piezoelectric substrate, and causing the one main surface of the piezoelectric substrate and the separator substrate to face each other, and attaching the projecting electrodes to the separator substrate. Pressing, removing the separator substrate after curing the resin material, and providing a terminal electrode on the resin material so as to be electrically connected to the protruding electrode. Of manufacturing a surface acoustic wave device. 【請求項１０】突起電極と端子電極とを電気的に導通さ
せる工程が超音波により接続される工程であることを特
徴とする請求項６または請求項７に記載の弾性表面波装
置の製造方法。10. The method for manufacturing a surface acoustic wave device according to claim 6, wherein the step of electrically connecting the projecting electrode and the terminal electrode is a step of connecting by ultrasonic waves. . 【請求項１１】突起電極、及び端子電極の少なくとも前
記突起電極と接触する部分、が金からなり、前記端子電
極の金が電解めっきで形成されることを特徴とする請求
項１０に記載の弾性表面波装置の製造方法。11. The elasticity according to claim 10, wherein at least a portion of the protruding electrode and the terminal electrode which is in contact with the protruding electrode is made of gold, and the gold of the terminal electrode is formed by electrolytic plating. A method for manufacturing a surface acoustic wave device. 【請求項１２】突起電極と端子電極とを電気的に導通さ
せる工程が、加熱による金属溶融により接続される工程
であることを特徴とする請求項６または請求項７に記載
の弾性表面波装置の製造方法。12. The surface acoustic wave device according to claim 6, wherein the step of electrically connecting the protruding electrode and the terminal electrode is a step of connecting by melting a metal by heating. Manufacturing method. 【請求項１３】端子電極とセパレータ基板が電気的に導
通していることを特徴とする請求項６または請求項７に
記載の弾性表面波装置の製造方法。13. The method for manufacturing a surface acoustic wave device according to claim 6, wherein the terminal electrode and the separator substrate are electrically connected. 【請求項１４】セパレータ基板が導電体であることを特
徴とする請求項８または請求項９に記載の弾性表面波装
置の製造方法。14. The method for manufacturing a surface acoustic wave device according to claim 8, wherein the separator substrate is a conductor. 【請求項１５】圧電基板がウエハである請求項６から請
求項９のいずれかに記載の弾性表面波装置の製造方法。15. The method for manufacturing a surface acoustic wave device according to claim 6, wherein the piezoelectric substrate is a wafer.
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PCT/JP2002/000949 WO2002063763A1 (en) 2001-02-06 2002-02-06 Surface acoustic wave device, its manufacturing method, and electronic circuit device
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JP2008182292A (en) * 2007-01-23 2008-08-07 Fujitsu Media Device Kk Surface acoustic wave device
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JP2010034782A (en) * 2008-07-28 2010-02-12 Fujitsu Ltd Elastic boundary wave device, manufacturing method thereof, and manufacturing method of duplexer
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JP2013031117A (en) * 2011-07-29 2013-02-07 Kyocera Corp Electronic component having elastic wave device
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JPH11251866A (en) * 1998-02-27 1999-09-17 Tdk Corp Chip element and manufacture of the same
JP2000261284A (en) * 1999-03-05 2000-09-22 Kyocera Corp Surface acoustic wave device and its production
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004032321A1 (en) * 2002-10-04 2004-04-15 Toyo Communication Equipment Co., Ltd. Production method for surface-mounted saw device
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US7448119B2 (en) 2006-06-01 2008-11-11 Alps Electric Co., Ltd. Method of producing a surface acoustic wave device
KR100866433B1 (en) 2006-07-24 2008-10-31 후지쓰 메디아 데바이스 가부시키가이샤 Elastic wave device and manufacturing method of the same
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JP2009188844A (en) * 2008-02-08 2009-08-20 Fujitsu Media Device Kk Surface acoustic wave device and manufacturing method thereof
JP2010034782A (en) * 2008-07-28 2010-02-12 Fujitsu Ltd Elastic boundary wave device, manufacturing method thereof, and manufacturing method of duplexer
JP2010245991A (en) * 2009-04-09 2010-10-28 Shin-Etsu Chemical Co Ltd Substrate for surface acoustic wave element and method for manufacturing the same
JP2013031117A (en) * 2011-07-29 2013-02-07 Kyocera Corp Electronic component having elastic wave device
JP2014099781A (en) * 2012-11-15 2014-05-29 Nippon Dempa Kogyo Co Ltd Piezoelectric component

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