JP2002232012A - Semiconductor light emitting element - Google Patents
Semiconductor light emitting elementInfo
- Publication number
- JP2002232012A JP2002232012A JP2001027243A JP2001027243A JP2002232012A JP 2002232012 A JP2002232012 A JP 2002232012A JP 2001027243 A JP2001027243 A JP 2001027243A JP 2001027243 A JP2001027243 A JP 2001027243A JP 2002232012 A JP2002232012 A JP 2002232012A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- light emitting
- semiconductor light
- emitting diode
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体発光素子に
関し、さらに詳しくは、白色の発光色を得ることができ
る半導体発光素子に関する。[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor light emitting device, and more particularly, to a semiconductor light emitting device capable of obtaining white light emission.
【０００２】[0002]
【従来の技術】発光ダイオードに代表される半導体発光
素子は、小型で長寿命であるという特徴を有し、従来よ
り各種機器の表示灯などに広く使われてきた。最近で
は、青色発光ダイオードの実用化に伴い、用途が広がり
つつある。その１つとして、青色発光ダイオードと蛍光
体とを組み合わせて、白色の発光色を得ることができる
半導体発光素子がある。これらは、照明用や表示器用な
どとして用いられる。2. Description of the Related Art A semiconductor light emitting device represented by a light emitting diode has a feature of being small in size and having a long service life, and has been widely used as an indicator lamp of various devices. Recently, the application of the blue light emitting diode is expanding with practical use. As one of them, there is a semiconductor light emitting element which can obtain a white light emission color by combining a blue light emitting diode and a phosphor. These are used for lighting and display devices.
【０００３】図２は、従来の白色の発光色が得られる半
導体発光素子の構造を示す図解的な断面図である。一対
のリード端子３１，３２が平行に配されており、一方の
リード端子３１の上端には、上に開いた凹形の素子搭載
部３３が設けられている。素子搭載部３３の凹部の底は
平坦面３３ａとなっており、その平坦面３３ａ上に導電
性ペースト３４により、発光ダイオードチップ３５がダ
イボンディングされている。発光ダイオードチップ３５
は、ＧａＮ系化合物半導体層を含むもので、発光色は青
色である。素子搭載部３３の凹部内で、発光ダイオード
チップ３５の周囲には、蛍光層３６が配されている。蛍
光層３６は、発光ダイオードチップ３５が発する青色光
を受けて、たとえば黄色などの蛍光を発する蛍光体を含
んでいる。FIG. 2 is a schematic cross-sectional view showing the structure of a conventional semiconductor light emitting device capable of obtaining a white light emission color. A pair of lead terminals 31 and 32 are arranged in parallel, and an upper end of one of the lead terminals 31 is provided with an upwardly open concave element mounting portion 33. The bottom of the concave portion of the element mounting portion 33 is a flat surface 33a, and the light emitting diode chip 35 is die-bonded on the flat surface 33a with a conductive paste. Light emitting diode chip 35
Includes a GaN-based compound semiconductor layer and emits blue light. A fluorescent layer 36 is provided around the light emitting diode chip 35 in the concave portion of the element mounting portion 33. The fluorescent layer 36 includes a phosphor that receives blue light emitted by the light emitting diode chip 35 and emits fluorescence such as yellow.
【０００４】発光ダイオードチップ３５の上面と、他方
のリード端子３２の上端とは、ボンディングワイヤ３７
で接続されている。発光ダイオードチップ３５、ボンデ
ィングワイヤ３７、素子搭載部３３、およびリード端子
３１，３２の一部は、可視光に対して透過性を有する透
明樹脂３８によって被覆されている。リード端子３１，
３２間に通電すると、発光ダイオードチップ３５は、青
色光を発し、蛍光層３６はこの青色光を受けて蛍光を発
する。蛍光層３６が適量（適当な厚さ）のとき、青色光
と蛍光とが適正に混合されて白色化度の高い白色の光が
得られる。蛍光層３６が多すぎる（厚すぎる）と、蛍光
層３６を透過する青色光が弱くなり、全体として蛍光色
（たとえば黄色）に近い色となる。一方、蛍光層３６が
少なすぎる（薄すぎる）と、蛍光層３６を透過する青色
光が強くなり過ぎ、全体として青みがかった色となる。
透明樹脂３８は、これらの光に対して透過性を有するの
で、外部からこれらの混色の光を視認することができ
る。The upper surface of the light emitting diode chip 35 and the upper end of the other lead terminal 32 are
Connected. A part of the light emitting diode chip 35, the bonding wire 37, the element mounting part 33, and the lead terminals 31 and 32 are covered with a transparent resin 38 having transparency to visible light. Lead terminal 31,
When electricity is supplied between the light emitting diodes 32, the light emitting diode chip 35 emits blue light, and the fluorescent layer 36 receives this blue light and emits fluorescence. When the fluorescent layer 36 has an appropriate amount (appropriate thickness), blue light and fluorescent light are appropriately mixed to obtain white light with a high degree of whitening. If the fluorescent layer 36 is too large (too thick), the blue light transmitted through the fluorescent layer 36 becomes weak, and becomes a color close to a fluorescent color (for example, yellow) as a whole. On the other hand, when the amount of the fluorescent layer 36 is too small (too thin), the blue light transmitted through the fluorescent layer 36 becomes too strong, and the color becomes bluish as a whole.
Since the transparent resin 38 has transparency to the light, the mixed light can be visually recognized from the outside.
【０００５】このような半導体発光素子の製造工程にお
いて、発光ダイオードチップ３５が平坦面３３ａにダイ
ボンディングされ、ボンディングワイヤ３７が発光ダイ
オードチップ３５に接続された後、ディップ法、ディス
ペンサ法などにより、蛍光層３６が発光ダイオードチッ
プ３５の周囲に配置される。すなわち、蛍光体を練り込
んだペーストを、発光ダイオードチップ３５に付着（デ
ィップ）させたり、注射針状のディスペンサにより発光
ダイオードチップ３５に供給する。その後、乾燥、硬化
などの処理を経て蛍光層３６が得られる。このような方
法により、蛍光層３６は、発光ダイオードチップ３５の
まわりのごく限られた領域にのみ設けられる。In the process of manufacturing such a semiconductor light emitting device, the light emitting diode chip 35 is die-bonded to the flat surface 33a, and the bonding wire 37 is connected to the light emitting diode chip 35. A layer 36 is arranged around the light emitting diode chip 35. That is, the paste into which the phosphor has been kneaded is attached (dipped) to the light emitting diode chip 35 or supplied to the light emitting diode chip 35 by a syringe needle-shaped dispenser. Thereafter, the phosphor layer 36 is obtained through processes such as drying and curing. With such a method, the fluorescent layer 36 is provided only in a very limited area around the light emitting diode chip 35.
【０００６】[0006]
【発明が解決しようとする課題】ところが、ディップ法
では、ペーストの付着量が厳密に制御されるわけではな
い。また、ディスペンサ法でも、ペーストの供給量は必
ずしも一定しない。したがって、発光ダイオードチップ
３５のまわりに形成される蛍光層３６の量（厚さ）は一
定しない。また、ディップ法、ディスペンサ法などで用
いるペーストは粘度が低いため、作業中または塗布後
に、蛍光体がペースト内で沈殿して分離しやすい。した
がって、このようなペーストを用いて形成された蛍光層
３６は、厚みが一定していなかったり、蛍光体の含有量
が一定していなかったり、または、蛍光体の分布にむら
があったりする。これにより、この半導体発光素子が発
する光の色は、必ずしも白色とはならず、青みがかった
色となったり、黄みがかった色となったりすることがあ
る。したがって、製品の歩留まりが悪くなる。However, in the dipping method, the amount of the paste adhered is not strictly controlled. Further, even in the dispenser method, the supply amount of the paste is not always constant. Therefore, the amount (thickness) of the fluorescent layer 36 formed around the light emitting diode chip 35 is not constant. In addition, since the paste used in the dipping method, the dispenser method, or the like has a low viscosity, the phosphor easily precipitates and separates in the paste during operation or after application. Therefore, the thickness of the phosphor layer 36 formed using such a paste is not constant, the content of the phosphor is not constant, or the distribution of the phosphor is uneven. As a result, the color of the light emitted from the semiconductor light emitting element is not always white, but may be bluish or yellowish. Therefore, the yield of products is deteriorated.
【０００７】そこで、本発明の目的は、所望の色の光を
得ることができる半導体発光素子を提供することであ
る。本発明の他の目的は、歩留まりが高い半導体発光素
子を提供することである。Accordingly, an object of the present invention is to provide a semiconductor light emitting device capable of obtaining light of a desired color. Another object of the present invention is to provide a semiconductor light emitting device having a high yield.
【０００８】[0008]
【課題を解決するための手段および発明の効果】上記の
目的を達成するための請求項１記載の発明は、素子搭載
部を有するリード端子と、上記素子搭載部上に搭載され
た半導体発光チップと、上記半導体発光チップおよび上
記素子搭載部を被覆するようにモールド成形して形成さ
れた第１樹脂と、蛍光体を分散させた樹脂材料を、上記
第１樹脂の外側を被覆するようにモールド成形して形成
された第２樹脂とを含むことを特徴とする半導体発光素
子である。According to the first aspect of the present invention, there is provided a lead terminal having an element mounting portion, and a semiconductor light emitting chip mounted on the element mounting portion. And a first resin formed by molding so as to cover the semiconductor light emitting chip and the element mounting portion, and a resin material having a phosphor dispersed therein, so as to cover the outside of the first resin. And a second resin formed by molding.
【０００９】半導体発光チップは、一対のリード端子に
接続されていてもよい。たとえば、半導体発光チップ
は、一方のリード端子の先端に設けられた素子搭載部上
にダイボンディングされ、他方のリードと半導体発光チ
ップとがボンディングワイヤにより接続された形態とす
ることができる。第１樹脂は、半導体発光チップが発す
る光に対して透過性を有するものとすることができる。
第２樹脂中の蛍光体は、半導体発光チップが発する光を
受けて、蛍光を発するものとすることができる。第２樹
脂は、第１樹脂の外側に配されているので、この場合、
半導体発光チップから発せられた光は、第１樹脂を透過
して第２樹脂に達し、第２樹脂中の蛍光体は蛍光を発す
る。[0009] The semiconductor light emitting chip may be connected to a pair of lead terminals. For example, the semiconductor light emitting chip may be configured such that the semiconductor light emitting chip is die-bonded on an element mounting portion provided at the end of one lead terminal, and the other lead and the semiconductor light emitting chip are connected by bonding wires. The first resin may be transparent to light emitted from the semiconductor light emitting chip.
The phosphor in the second resin may emit fluorescence upon receiving light emitted from the semiconductor light emitting chip. Since the second resin is disposed outside the first resin, in this case,
Light emitted from the semiconductor light emitting chip passes through the first resin and reaches the second resin, and the phosphor in the second resin emits fluorescence.
【００１０】半導体発光チップが発する光の一部は、第
２樹脂を透過する。したがって、外部からは、半導体発
光チップの発光色と蛍光体の蛍光色との混色の光を視認
することができる。たとえば、半導体発光チップの発光
色が青色であり、蛍光体がこの青色光を受けて黄色の蛍
光を発するものであるとすると、青色光と黄色光との混
色の光が得られる。青色光と黄色光とが適当な輝度比の
とき、これらの混合により白色光が得られる。[0010] Part of the light emitted from the semiconductor light emitting chip passes through the second resin. Therefore, light of a mixed color of the emission color of the semiconductor light emitting chip and the fluorescent color of the phosphor can be visually recognized from the outside. For example, if the light emission color of the semiconductor light emitting chip is blue and the phosphor emits yellow fluorescence upon receiving this blue light, mixed light of blue light and yellow light is obtained. When blue light and yellow light have an appropriate luminance ratio, white light can be obtained by mixing them.
【００１１】第１樹脂は、モールド成形により形成され
る。すなわち、金型（モールド）のキャビティなど、一
定容積の空間内に樹脂を注入する方法により、第１樹脂
が形成される。第１樹脂が形成される領域は、たとえ
ば、半導体発光チップ、素子搭載部、ボンディングワイ
ヤ、リード端子の一部を含む領域とすることができる。
たとえば、トランスファ成形法の場合、一定容積のキャ
ビティ内に、ダイボンディングおよびワイヤボンディン
グが終了した半導体発光チップ、素子搭載部、およびボ
ンディングワイヤを含むように、リード端子の一部が配
置される。そして、キャビティ内に流動化した第１樹脂
が注入される。これにより、半導体発光チップのまわり
に第１樹脂が形成される。第１樹脂の形状および大きさ
は、キャビティの形状および大きさによって決定される
ので、再現性がよい。The first resin is formed by molding. That is, the first resin is formed by a method of injecting the resin into a space having a fixed volume such as a cavity of a mold. The region where the first resin is formed can be, for example, a region including a semiconductor light emitting chip, an element mounting portion, a bonding wire, and a part of a lead terminal.
For example, in the case of the transfer molding method, a part of a lead terminal is arranged in a cavity having a fixed volume so as to include a semiconductor light emitting chip for which die bonding and wire bonding have been completed, an element mounting portion, and a bonding wire. Then, the fluidized first resin is injected into the cavity. Thereby, the first resin is formed around the semiconductor light emitting chip. Since the shape and size of the first resin are determined by the shape and size of the cavity, reproducibility is good.
【００１２】第２樹脂も、同様にモールド成形により、
第１樹脂の外側に形成される。すなわち、上記の第１樹
脂まで形成したものを、金型（モールド）のキャビティ
内に固定し、流動化した第２樹脂を第１樹脂とキャビテ
ィとの間に流し込む。これにより、第１樹脂の外側に、
第１樹脂に密接して第２樹脂が形成される。第２樹脂の
形状および大きさは、キャビティの形状および大きさに
よって決定されるので、再現性がよい。以上のことか
ら、第２樹脂の形成に際して、上記第１樹脂まで形成し
たものを、キャビティ内での一定の位置に配置すること
により、一定の厚さの第２樹脂が得られる。Similarly, the second resin is also formed by molding.
It is formed outside the first resin. That is, the above-described first resin is fixed in the cavity of the mold, and the fluidized second resin is poured between the first resin and the cavity. Thereby, outside the first resin,
A second resin is formed in close contact with the first resin. Since the shape and size of the second resin are determined by the shape and size of the cavity, reproducibility is good. From the above, when forming the second resin, the second resin having a certain thickness can be obtained by disposing the one formed up to the first resin at a certain position in the cavity.
【００１３】また、トランスファ成形法で用いられる樹
脂は、流動状体にあるときでも高粘度であり、樹脂と蛍
光体との分離が起こりにくい。したがって、第２樹脂は
均質に保たれ、蛍光体含有率は所定の値に保たれる。以
上のことから、第１樹脂のまわり、すなわち、半導体発
光チップのまわりには、蛍光体含有量が一定でむらのな
い、一定厚さの第２樹脂が形成される。したがって、こ
のような半導体発光素子は、半導体発光チップの発光色
（たとえば青色）と、蛍光体の蛍光色（たとえば黄色）
とが所定の割合で混合されるので、所望の色（たとえば
白色化度合いが高い白色）の光が得られる。また、この
半導体発光素子を多数作ったとき、個々の半導体発光素
子が発する光の色（たとえば白色化度合いが高い白色）
は再現性が高い。すなわち、この半導体発光素子は歩留
まりが高い。Further, the resin used in the transfer molding method has a high viscosity even when it is in a fluid state, and it is difficult for the resin to be separated from the phosphor. Therefore, the second resin is kept homogeneous, and the phosphor content is kept at a predetermined value. From the above, the second resin having a constant thickness and a uniform thickness is formed around the first resin, that is, around the semiconductor light emitting chip. Therefore, such a semiconductor light emitting element has a light emitting color of a semiconductor light emitting chip (for example, blue) and a fluorescent color of a phosphor (for example, yellow).
Are mixed at a predetermined ratio, so that light of a desired color (for example, white having a high degree of whitening) is obtained. When many semiconductor light emitting devices are manufactured, the color of light emitted from each semiconductor light emitting device (for example, white having a high degree of whitening).
Has high reproducibility. That is, this semiconductor light emitting device has a high yield.
【００１４】また、第２樹脂を別途形成してから、第１
樹脂のまわりに装着するのではないので、第１樹脂と第
２樹脂との間には、空気層等は形成されず、第１樹脂と
第２樹脂は密接する。したがって、このような半導体発
光素子は、発光効率がよい。第２樹脂の基材をなす封止
樹脂は、第１樹脂と同じ種類のもの（たとえばエポキ
シ）であってもよい。この場合、半導体発光チップが発
する光は、第１樹脂と第２樹脂との界面を効率的に透過
するので、このような半導体発光素子は発光効率がよ
い。Further, after forming the second resin separately, the first resin
Since the first resin and the second resin are not mounted around the resin, no air layer or the like is formed between the first resin and the second resin, and the first resin and the second resin are in close contact with each other. Therefore, such a semiconductor light emitting device has good luminous efficiency. The sealing resin forming the base material of the second resin may be of the same type as the first resin (for example, epoxy). In this case, since the light emitted from the semiconductor light emitting chip efficiently passes through the interface between the first resin and the second resin, such a semiconductor light emitting element has high luminous efficiency.
【００１５】また、このような半導体発光素子は、通常
の青色発光ダイオードを形成した後、そのまわりに、第
２樹脂をトランスファ成形して得ることができる。Further, such a semiconductor light emitting device can be obtained by forming a normal blue light emitting diode and then transfer-molding a second resin therearound.
【００１６】[0016]
【発明の実施の形態】以下では、この発明の実施の形態
を、添付図面を参照して詳細に説明する。図１は、本発
明の一実施形態に係る白色の発光色が得られる半導体発
光素子の製造方法を、工程順に示す図解的な断面図であ
る。一対のリード端子１，２が平行に配されており、一
方のリード端子１の上端には、上に開いた凹形の素子搭
載部３が設けられている。素子搭載部３の凹部の底は平
坦面３ａとなっており、その平坦面３ａ上に導電性ペー
スト４により、発光ダイオードチップ５がダイボンディ
ングされている。発光ダイオードチップ５は、ＧａＮ系
化合物半導体層を含むもので、発光色は青色である。発
光ダイオードチップ５の上面と、他方のリード端子２の
上端とは、ボンディングワイヤ７で接続されている。Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor light-emitting device capable of obtaining a white light-emitting color according to an embodiment of the present invention in the order of steps. A pair of lead terminals 1 and 2 are arranged in parallel, and an upper end of one of the lead terminals 1 is provided with an upwardly open concave element mounting portion 3. The bottom of the concave portion of the element mounting portion 3 is a flat surface 3 a, and the light emitting diode chip 5 is die-bonded to the flat surface 3 a by the conductive paste 4. The light emitting diode chip 5 includes a GaN-based compound semiconductor layer and emits blue light. The upper surface of the light emitting diode chip 5 and the upper end of the other lead terminal 2 are connected by a bonding wire 7.
【００１７】発光ダイオードチップ５、素子搭載部３、
ボンディングワイヤ７、リード端子１，２の一部を含む
領域は、第１樹脂８で被覆されている。第１樹脂８は、
上面が球面に構成された円柱状の形状を呈する。第１樹
脂８は、可視光に対する透過性を有するものであり、た
とえば、エポキシを含むものとすることができる。第１
樹脂８の外側には、第２樹脂９が一定厚さで密接して被
覆している。第２樹脂９は、発光ダイオードチップ５が
発する青色光を受けて、たとえば黄色などの蛍光を発す
る蛍光体を、均一に封止樹脂（たとえば、エポキシ）に
練り込んだものである。The light emitting diode chip 5, the element mounting part 3,
A region including the bonding wire 7 and a part of the lead terminals 1 and 2 is covered with the first resin 8. The first resin 8 is
It has a columnar shape with a spherical upper surface. The first resin 8 has transparency to visible light, and may include, for example, epoxy. First
The outside of the resin 8 is closely covered with a second resin 9 with a constant thickness. The second resin 9 is obtained by uniformly kneading a phosphor that emits fluorescence such as yellow when receiving the blue light emitted by the light emitting diode chip 5 into a sealing resin (for example, epoxy).
【００１８】リード端子１，２間に通電すると、発光ダ
イオードチップ５は、青色光を発し、この青色光は第１
樹脂８を透過して第２樹脂９に達する。第２樹脂９中の
蛍光体はこの青色光を受けて黄色の蛍光を発する。青色
光の一部は第２樹脂９を透過するので、外部からは、青
色光と黄色光との混色の光を視認することができる。第
１樹脂８は、モールド成形により形成される。すなわ
ち、金型（モールド）のキャビティなど、一定容積の空
間内に樹脂を注入する方法により、第１樹脂８を形成す
ることが可能である。たとえば、トランスファ成形法の
場合、一定容積のキャビティ内に、ダイボンディングお
よびワイヤボンディングが終了した発光ダイオードチッ
プ５、素子搭載部３、およびボンディングワイヤ７を含
むように、リード端子１，２の一部が配置される。そし
て、キャビティ内に流動化した第１樹脂８が注入され
る。これにより、発光ダイオードチップ５、素子搭載部
３、ボンディングワイヤ７、およびリード端子１，２の
一部を含む領域に、第１樹脂８が形成される（図１
（ａ））。第１樹脂８の形状および大きさは、キャビテ
ィの容積によって決定されるので、再現性がよい。When current is applied between the lead terminals 1 and 2, the light emitting diode chip 5 emits blue light, and this blue light
The light passes through the resin 8 and reaches the second resin 9. The phosphor in the second resin 9 receives this blue light and emits yellow fluorescence. Since a part of the blue light passes through the second resin 9, a mixed light of the blue light and the yellow light can be visually recognized from the outside. The first resin 8 is formed by molding. That is, the first resin 8 can be formed by a method of injecting a resin into a space having a fixed volume such as a cavity of a mold. For example, in the case of the transfer molding method, a part of the lead terminals 1 and 2 is included in a cavity having a fixed volume so as to include the light-emitting diode chip 5, the element mounting portion 3, and the bonding wire 7 on which die bonding and wire bonding have been completed. Is arranged. Then, the fluidized first resin 8 is injected into the cavity. Thereby, the first resin 8 is formed in a region including the light emitting diode chip 5, the element mounting portion 3, the bonding wire 7, and a part of the lead terminals 1 and 2.
(A)). Since the shape and size of the first resin 8 are determined by the volume of the cavity, reproducibility is good.
【００１９】第２樹脂９も、同様にモールド成形により
第１樹脂８の外側に形成される。すなわち、上記の第１
樹脂８まで形成したもの（図１（ａ））を、金型（モー
ルド）のキャビティ内に固定し、流動化した第２樹脂９
を第１樹脂８とキャビティとの間に流し込む。第２樹脂
９用のキャビティは、第１樹脂８よりもわずかに大きい
ものである。これにより、第１樹脂８の外側に、第１樹
脂８に密接して第２樹脂９が形成される（図１
（ｂ））。第２樹脂９の形状および大きさは、キャビテ
ィの形状および大きさによって決定されるので、再現性
がよい。以上のことから、第２樹脂９の形成に際して、
上記第１樹脂まで形成したもの（図１（ａ））を、キャ
ビティ内での一定の位置に配置することにより、一定の
厚さの第２樹脂９が得られる。The second resin 9 is similarly formed outside the first resin 8 by molding. That is, the first
The resin 8 (FIG. 1A) formed up to the resin 8 is fixed in the cavity of the mold (mold), and the fluidized second resin 9 is formed.
Is poured between the first resin 8 and the cavity. The cavity for the second resin 9 is slightly larger than the first resin 8. As a result, the second resin 9 is formed outside the first resin 8 in close contact with the first resin 8.
(B)). Since the shape and size of the second resin 9 are determined by the shape and size of the cavity, reproducibility is good. From the above, when forming the second resin 9,
The second resin 9 having a constant thickness can be obtained by disposing the resin formed up to the first resin (FIG. 1A) at a fixed position in the cavity.
【００２０】また、トランスファ成形法で用いられる樹
脂は、流動状体にあるときでも高粘度である。したがっ
て、封止樹脂と蛍光体との分離が起こりにくいので、第
２樹脂９は均質に保たれ、蛍光体含有率は所定の値に保
たれる。以上のことから、第１樹脂８のまわりには、蛍
光体含有率が一定でむらのない第２樹脂９が一定厚さで
形成される。したがって、このような半導体発光素子
は、発光ダイオードチップ５が発する青色光と、蛍光体
が発する黄色光とが所定の割合で混合されるので、所望
の色（たとえば、白色化度合いが高い白色）が得られ
る。また、この半導体発光素子を多数作ったとき、個々
の半導体発光素子が発する色（たとえば、白色化度合い
が高い白色）は再現性が高い。すなわち、この半導体発
光素子は歩留まりが高い。The resin used in the transfer molding method has a high viscosity even when it is in a fluid state. Therefore, the separation between the sealing resin and the phosphor is unlikely to occur, so that the second resin 9 is kept homogeneous and the phosphor content is kept at a predetermined value. From the above, the second resin 9 having a constant phosphor content and a uniform thickness is formed around the first resin 8 at a constant thickness. Therefore, in such a semiconductor light emitting device, the blue light emitted from the light emitting diode chip 5 and the yellow light emitted from the phosphor are mixed at a predetermined ratio, so that a desired color (for example, white having a high whitening degree) is obtained. Is obtained. In addition, when a large number of such semiconductor light emitting devices are manufactured, the color emitted by each semiconductor light emitting device (for example, white having a high degree of whitening) has high reproducibility. That is, this semiconductor light emitting device has a high yield.
【００２１】また、このような製造方法は、第２樹脂９
を別途形成してから、第１樹脂８のまわりに装着するの
ではないので、第１樹脂８と第２樹脂９との間には、空
気層等は形成されず、第１樹脂８と第２樹脂９は密接す
る。したがって、このような半導体発光素子は、発光効
率がよい。第２樹脂９の基材をなす封止樹脂が、第１樹
脂８と同じ種類のもの（たとえばエポキシ）である場
合、半導体発光チップ５が発する光は、第１樹脂８と第
２樹脂９との界面を効率的に透過するので、このような
半導体発光素子は発光効率がよい。Further, such a manufacturing method is applied to the second resin 9.
Is not formed around the first resin 8 after forming it separately, so that no air layer or the like is formed between the first resin 8 and the second resin 9 and the first resin 8 and the second resin The two resins 9 are in close contact. Therefore, such a semiconductor light emitting device has good luminous efficiency. When the sealing resin forming the base material of the second resin 9 is of the same type (for example, epoxy) as the first resin 8, the light emitted from the semiconductor light emitting chip 5 emits the first resin 8 and the second resin 9. Such a semiconductor light emitting device has good luminous efficiency because it efficiently transmits through the interface of the semiconductor light emitting device.
【００２２】また、このような半導体発光素子は、通常
の青色発光ダイオードを形成した後、そのまわりに、第
２樹脂９をトランスファ成形して得ることができる。半
導体発光チップの発光色や蛍光体の蛍光色は、任意に選
択することができる。その他、特許請求の範囲に記載さ
れた事項の範囲で種々の設計変更を施すことが可能であ
る。Further, such a semiconductor light emitting device can be obtained by forming a normal blue light emitting diode and then transfer-molding the second resin 9 therearound. The emission color of the semiconductor light emitting chip and the fluorescent color of the phosphor can be arbitrarily selected. In addition, various design changes can be made within the scope of the matters described in the claims.
【図１】本発明の一実施形態に係る白色の発光色が得ら
れる半導体発光素子の製造方法を、工程順に示す図解的
な断面図である。FIG. 1 is a schematic cross-sectional view showing a method for manufacturing a semiconductor light emitting device capable of obtaining a white luminescent color according to an embodiment of the present invention in the order of steps.
【図２】従来の白色の発光色が得られる半導体発光素子
の構造を示す図解的な断面図である。FIG. 2 is a schematic cross-sectional view showing the structure of a conventional semiconductor light emitting device that can emit white light.
１，２ リード端子 ３ 素子搭載部 ５ 発光ダイオードチップ ８ 第１樹脂 ９ 第２樹脂 1, 2 lead terminal 3 element mounting portion 5 light emitting diode chip 8 first resin 9 second resin
Claims (1)
ようにモールド成形して形成された第１樹脂と、 蛍光体を分散させた樹脂材料を、上記第１樹脂の外側を
被覆するようにモールド成形して形成された第２樹脂と
を含むことを特徴とする半導体発光素子。A lead terminal having an element mounting part, a semiconductor light emitting chip mounted on the element mounting part, and a semiconductor light emitting chip formed by molding to cover the semiconductor light emitting chip and the element mounting part. A semiconductor light emitting device comprising: a first resin; and a second resin formed by molding a resin material having a phosphor dispersed therein so as to cover the outside of the first resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001027243A JP2002232012A (en) | 2001-02-02 | 2001-02-02 | Semiconductor light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001027243A JP2002232012A (en) | 2001-02-02 | 2001-02-02 | Semiconductor light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002232012A true JP2002232012A (en) | 2002-08-16 |
Family
ID=18891936
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001027243A Pending JP2002232012A (en) | 2001-02-02 | 2001-02-02 | Semiconductor light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002232012A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005210042A (en) * | 2003-09-11 | 2005-08-04 | Kyocera Corp | Light emitting apparatus and illumination apparatus |
| WO2006058473A1 (en) * | 2004-12-03 | 2006-06-08 | Jianwei Chen | The light emitting diode of high luminous efficiency of 360 degree (body luminescence) |
-
2001
- 2001-02-02 JP JP2001027243A patent/JP2002232012A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005210042A (en) * | 2003-09-11 | 2005-08-04 | Kyocera Corp | Light emitting apparatus and illumination apparatus |
| WO2006058473A1 (en) * | 2004-12-03 | 2006-06-08 | Jianwei Chen | The light emitting diode of high luminous efficiency of 360 degree (body luminescence) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9502617B2 (en) | Light emitting diode package and method of manufacturing the same | |
| KR101521260B1 (en) | Light emitting diode package and manufacturing method thereof | |
| JP5290368B2 (en) | LIGHT EMITTING SEMICONDUCTOR ELEMENT HAVING LUMINANCE CONVERSION ELEMENT AND ITS MANUFACTURING METHOD, LED LIGHTING DEVICE, LIGHT SOURCE | |
| JP2002050797A (en) | Semiconductor excitation phosphor light-emitting device and manufacturing method therefor | |
| US20090039762A1 (en) | White led device comprising dual-mold and manufacturing method for the same | |
| JP2002252376A (en) | Surface-mounted type light-emitting diode and its manufacturing method | |
| JP2002141559A (en) | Light emitting semiconductor chip assembly and light emitting semiconductor lead frame | |
| JP2000223749A (en) | Light emitting diode lamp and its manufacture chip type light emitting diode element, and dot matrix type light emitting diode unit | |
| WO2009140829A1 (en) | A led lighting device with low attenuation and high luminous efficiency and manufacturing method thereof | |
| KR20080055549A (en) | Method for manufacturing led package | |
| US20140217451A1 (en) | Mixed light led structure | |
| JP2003168828A (en) | Surface mounting light emitting diode and its producing method | |
| JPWO2010023992A1 (en) | Light emitting device and manufacturing method thereof | |
| JP2002232013A (en) | Semiconductor light emitting element | |
| TW201034260A (en) | Light emitting diode package structure and manufacturing method thereof | |
| KR100748707B1 (en) | Method for manufacturing light-emitting device | |
| JP2002232012A (en) | Semiconductor light emitting element | |
| JP2003077317A (en) | Leg lamp | |
| TWI291251B (en) | LED assembly structure | |
| JP2002151744A (en) | Light source device | |
| US7755282B2 (en) | LED structure and fabricating method for the same | |
| KR101047795B1 (en) | Semiconductor light emitting device | |
| KR100545739B1 (en) | Manufacturing method of white light emitting device | |
| TW201901989A (en) | Light-emitting diode package component and method of fabricating the same, and multiple color temperature illumination device with LED package component including a wavelength conversion layer and a flip-chip LED die that has a light-emitting body and two electrode | |
| KR100748239B1 (en) | Light emitting diode package and method of manufacturing the same |