JP2002231921A - Solid-state image pickup device and its manufacturing method - Google Patents
Solid-state image pickup device and its manufacturing methodInfo
- Publication number
- JP2002231921A JP2002231921A JP2001029511A JP2001029511A JP2002231921A JP 2002231921 A JP2002231921 A JP 2002231921A JP 2001029511 A JP2001029511 A JP 2001029511A JP 2001029511 A JP2001029511 A JP 2001029511A JP 2002231921 A JP2002231921 A JP 2002231921A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state imaging
- imaging device
- flat plate
- transparent member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、固体撮像素子チ
ップをＣＳＰ（チップサイズパッケージ）実装してなる
固体撮像装置及びその製造方法に関し、特にその気密封
止部の構成及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device in which a solid-state image pickup device chip is mounted on a CSP (chip size package) and a method of manufacturing the same, and more particularly to a structure of a hermetically sealed portion and a method of manufacturing the same.
【０００２】[0002]
【従来の技術】近年、例えば携帯機器を中心として小型
化が進み、それに伴ってその筐体及び内部回路基板にお
いても更なる小型化が求められている。この機器の小型
化への要求により、回路基板への実装部品の一つである
半導体素子も例外ではなく、小型化が要求されており、
半導体素子の一つである固体撮像素子についても同様で
ある。2. Description of the Related Art In recent years, miniaturization has progressed mainly in portable devices, for example, and accordingly, further miniaturization of its housing and internal circuit board has been required. Due to the demand for miniaturization of these devices, semiconductor devices, which are one of the components mounted on circuit boards, are no exception, and miniaturization is required.
The same applies to a solid-state imaging device that is one of the semiconductor devices.
【０００３】固体撮像装置については、従来図９に示す
実装方式が一般的である。すなわち、固体撮像素子チッ
プ101 をセラミックなどからなるパッケージ102 にダイ
ボンドし、ボンディングワイヤ103 を用いて固体撮像素
子チップ101 とパッケージ102 との所定の電気的接続を
行った後、パッケージ102 の縁部に設けた段部104 を用
いて、素子チップ101 の表面との間に空間を設けてガラ
スリッド105 を接着して気密封止し、固体撮像装置を構
成している。なお図９において、106 は外部リードを示
している。As for a solid-state image pickup device, a mounting method shown in FIG. 9 is generally used. That is, the solid-state imaging device chip 101 is die-bonded to a package 102 made of ceramic or the like, and a predetermined electrical connection between the solid-state imaging device chip 101 and the package 102 is performed using a bonding wire 103. A space is provided between the stepped portion 104 and the surface of the element chip 101 and a glass lid 105 is adhered and hermetically sealed to form a solid-state imaging device. In FIG. 9, reference numeral 106 denotes an external lead.
【０００４】ところで、このようにパッケージ102 とガ
ラスリッド105 を用いて固体撮像素子チップ全体の気密
封止を行うと、実装形状が大きくなってしまい、小型実
装を必要とする分野への適用が困難であった。However, if the entire solid-state image sensor chip is hermetically sealed using the package 102 and the glass lid 105 as described above, the mounting shape becomes large, and it is difficult to apply it to a field requiring small mounting. Met.
【０００５】このような不具合を解消する実装方式とし
て、特開平７−２０２１５２号公報に示すような構成の
固体撮像装置が提案されている。この固体撮像装置の断
面図を図10及び図11に示す。図９は、固体撮像素子チッ
プ101 上の受光エリアのみに、透明部材からなる平板部
107 とその下面縁部に一体的に形成された枠部108 とで
構成された気密封止部により、気密封止を行ったもので
あり、透明部材としてはガラス，石英，サファイヤ又は
透明樹脂などが用いられている。一方、図11に示す固体
撮像装置は、気密封止部を一体形成するのではなく、平
板部109 と枠部110 を接着して気密封止部を構成するよ
うにしたものである。ここで、枠部110はセラミック，
ガラス，シリコン等の無機物又はコバール，42アロイ等
の金属を用いて構成してもよい。更に、固体撮像素子チ
ップ101 表面に、エポキシ，フェノール，シリコン等の
樹脂を印刷又はフォトリソ技術でパターン形成して、枠
部を形成することも可能である。As a mounting method for solving such a problem, a solid-state image pickup device having a configuration as disclosed in Japanese Patent Application Laid-Open No. 7-202152 has been proposed. FIGS. 10 and 11 are cross-sectional views of this solid-state imaging device. FIG. 9 shows a flat plate portion made of a transparent member only in the light receiving area on the solid-state imaging device chip 101.
A hermetic sealing is performed by an hermetic sealing portion composed of 107 and a frame portion 108 formed integrally with the lower surface edge portion, and the transparent member is made of glass, quartz, sapphire, transparent resin, or the like. Is used. On the other hand, the solid-state imaging device shown in FIG. 11 does not integrally form the hermetic sealing portion, but forms the hermetic sealing portion by bonding the flat plate portion 109 and the frame portion 110. Here, the frame 110 is made of ceramic,
It may be constituted by using an inorganic substance such as glass or silicon or a metal such as Kovar or 42 alloy. Further, it is also possible to form a frame on the surface of the solid-state imaging device chip 101 by patterning a resin such as epoxy, phenol, or silicon by printing or photolithography.
【０００６】このように固体撮像装置を構成することに
より、小型化実装が可能になると共に、特にマイクロレ
ンズ付固体撮像装置においては、気密封止部の表面にフ
ィルタ，レンズ，プリズム等の光学部品を接着しても、
マイクロレンズの集光能力の低下を伴わない固体撮像装
置を実現することが可能になった。更に、気密封止部は
ウエーハ状態の固体撮像素子チップの全チップに対して
一括して形成可能となり、製造方法においても簡単にな
った。By configuring the solid-state imaging device in this manner, it is possible to reduce the size of the solid-state imaging device. In particular, in a solid-state imaging device with a microlens, optical components such as a filter, a lens, and a prism are provided on the surface of a hermetically sealed portion. Even if you glue
It has become possible to realize a solid-state imaging device without lowering the light condensing ability of the microlens. Furthermore, the hermetic sealing portion can be formed collectively on all the solid-state imaging device chips in the wafer state, and the manufacturing method is simplified.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記従
来提案された固体撮像装置においても、次のような課題
がある。まず、図10に示した一体構成の気密封止部の構
造では、ガラスなどの透明部材で平板部と枠部とを備え
た気密封止部を一体形成する必要があるが、加工面で精
度が要求されると共に、枠部を形成するためには、ディ
ープエッチングをはじめとした高アスペクトの加工が必
要となってくるが、これに関しての具体的な加工方法に
ついての考慮がなされていない。However, the solid-state imaging device proposed above has the following problems. First, in the structure of the hermetically sealed portion shown in FIG. 10, it is necessary to integrally form a hermetically sealed portion having a flat plate portion and a frame portion with a transparent member such as glass. Is required, and high aspect processing such as deep etching is required in order to form the frame portion, but no specific processing method is considered in this regard.
【０００８】また図11に示した平板部と枠部とを接着し
て気密封止部を形成する方式、特に樹脂で枠部をパター
ン形成する手法では、枠部を樹脂等の有機材料で構成し
た場合、いくつかの不具合が予想される。ひとつは、平
板部を構成する透明部材及びウエーハ等の無機材料を、
有機材料の枠部を介して貼り合わせることによって、気
密封止部を構成した場合、熱による線膨脹係数αの差に
よりクラックやひずみが入る可能性がある。一般的に、
例えば石英ガラスの線膨脹係数α＝0.05×10-6deg/℃で
あるのに対し、例えばエポキシの場合線膨脹係数α＝７
〜15×10-6deg/℃であるため、その材料間に大きな応力
が働くおそれがあるためである。また、有機材料の枠部
からの水分の侵入により、湿度に対しての信頼性の低下
が予想される。In the method of forming a hermetically sealed portion by bonding a flat plate portion and a frame portion as shown in FIG. 11, particularly a method of patterning the frame portion with a resin, the frame portion is made of an organic material such as a resin. If you do, some problems are expected. One is an inorganic material such as a transparent member and a wafer constituting the flat plate part,
In the case where the hermetic sealing portion is formed by bonding through a frame portion made of an organic material, cracks and strains may be caused due to a difference in linear expansion coefficient α due to heat. Typically,
For example, the linear expansion coefficient α of silica glass is 0.05 × 10 −6 deg / ° C., whereas the linear expansion coefficient α of epoxy resin is α = 7.
This is because there is a possibility that a large stress acts between the materials because the temperature is about 15 × 10 −6 deg / ° C. In addition, a decrease in reliability with respect to humidity is expected due to intrusion of moisture from the frame portion of the organic material.
【０００９】更に、特にマイクロレンズ付の固体撮像装
置においては、一般的にマイクロレンズ自体が樹脂で形
成されているため、枠部を形成するためのエッチング工
程で、一緒にマイクロレンズもエッチングされてしまう
可能性がある。また固体撮像素子チップ上にカラーフィ
ルタが形成されている場合は、枠部を形成する樹脂の硬
化温度によっては、前記カラーフィルタの光学特性に影
響を与えることも懸念される。Further, in a solid-state image pickup device with a microlens, in particular, since the microlens itself is generally formed of a resin, the microlens is also etched together with the etching step for forming the frame portion. May be lost. When a color filter is formed on the solid-state imaging device chip, there is a concern that the optical characteristics of the color filter may be affected depending on the curing temperature of the resin forming the frame portion.
【００１０】このように従来提案のものは、小型化実装
が可能で、且つウエーハ状態での全チップに気密封止部
の一括形成が可能であっても、気密封止部の信頼性並び
に気密封止部の製法には種々の難点があった。As described above, the conventional proposal can be miniaturized and mounted, and even if the hermetic sealing portion can be formed collectively on all the chips in the wafer state, the reliability and hermeticity of the hermetic sealing portion can be improved. There were various difficulties in the method of manufacturing the hermetically sealed portion.
【００１１】本発明は、上記課題を解決するためになさ
れたもので、小型化実装が可能であり、且つウエーハレ
ベルで製造可能な精度のよい、高い信頼性の気密封止部
を備えた固体撮像装置及びその製造方法を提供すること
を目的とする。請求項毎の目的を述べると、次の通りで
ある。請求項１及び２に係る発明は、小型化が可能で、
且つ高い信頼性の気密封止部を備えた固体撮像装置を提
供することを目的とする。請求項３に係る発明は、小型
化が可能で、固体撮像素子チップのＩ／Ｏパッドと外部
端子との電気的接続を容易にすると共に、高い信頼性の
気密封止部を備えた固体撮像装置を提供することを目的
とする。請求項４に係る発明は、固体撮像素子における
不要光の遮蔽効果を気密封止部の枠部に持たせることの
可能な固体撮像装置を提供することを目的とする。請求
項５に係る発明は、固体撮像素子チップと外部端子との
最適な電気的接続構造を提供することを目的とする。請
求項６に係る発明は、ウエーハ状態での気密封止部の一
括形成を可能とし、固体撮像素子チップ上に精度のよい
気密封止部を容易に形成することが可能な固体撮像装置
の製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and has a solid state which can be miniaturized and mounted and has a highly reliable and highly reliable hermetic sealing portion which can be manufactured at a wafer level. It is an object to provide an imaging device and a method for manufacturing the same. The purpose of each claim is as follows. The invention according to claims 1 and 2 can be downsized,
It is another object of the present invention to provide a solid-state imaging device having a highly reliable hermetic sealing portion. According to a third aspect of the present invention, a solid-state imaging device which can be miniaturized, facilitates electrical connection between an I / O pad of a solid-state imaging device chip and an external terminal, and has a highly reliable hermetic sealing portion. It is intended to provide a device. It is an object of the invention according to claim 4 to provide a solid-state imaging device capable of providing a frame portion of a hermetically sealed portion with an effect of blocking unnecessary light in a solid-state imaging device. A fifth object of the present invention is to provide an optimal electrical connection structure between a solid-state imaging device chip and an external terminal. According to a sixth aspect of the present invention, there is provided a method for manufacturing a solid-state imaging device capable of simultaneously forming a hermetically sealed portion in a wafer state and easily forming an accurate hermetically sealed portion on a solid-state image sensor chip. The aim is to provide a method.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するた
め、請求項１に係る発明は、固体撮像素子チップ上に、
透明部材からなる平板部と該平板部の下面縁部に配設さ
れた枠部とで構成された気密封止部を設けた固体撮像装
置において、前記枠部は前記透明部材からなる平板部と
熱膨脹係数がほぼ等しい無機材料で構成されていること
を特徴とするものである。また請求項２に係る発明は、
請求項１に係る固体撮像装置において、前記枠部は、透
明部材からなる平板部とは別個に形成され、該平板部の
下面縁部に接合されていることを特徴とするものであ
る。In order to solve the above-mentioned problems, the invention according to claim 1 provides a solid-state imaging device chip,
In a solid-state imaging device provided with a hermetically sealed portion composed of a flat plate portion made of a transparent member and a frame portion disposed on the lower edge of the flat plate portion, the frame portion is a flat plate portion made of the transparent member. It is characterized by being composed of an inorganic material having substantially the same thermal expansion coefficient. The invention according to claim 2 is
2. The solid-state imaging device according to claim 1, wherein the frame portion is formed separately from a flat plate portion made of a transparent member, and is joined to a lower surface edge of the flat plate portion.
【００１３】このように構成することにより、小型化が
可能で且つ枠部でのクラックやひずみを防止すると共
に、水分の侵入による湿度に対する信頼性の低下を防止
した高い信頼性の気密封止部を備えた固体撮像装置を実
現することが可能となる。With this configuration, a highly reliable hermetic sealing portion which can be reduced in size, prevents cracks and distortion in the frame portion, and prevents a decrease in reliability against humidity due to intrusion of moisture. Can be realized.
【００１４】請求項３に係る発明は、請求項１又は２に
係る固体撮像装置において、前記枠部は、外部電極と接
続するための入出力信号配線を備えていることを特徴と
するものである。このように構成することにより、小型
化が可能で、固体撮像素子チップのＩ／Ｏパッドからの
電気信号を固体撮像素子チップ端部まで引き出すことが
でき、外部端子との電気的接続を容易にし、且つ高い信
頼性の気密封止部を備えた固体撮像装置を実現すること
が可能となる。According to a third aspect of the present invention, in the solid-state imaging device according to the first or second aspect, the frame portion is provided with an input / output signal wiring for connecting to an external electrode. is there. With this configuration, it is possible to reduce the size, to extract an electric signal from the I / O pad of the solid-state imaging device chip to the end of the solid-state imaging device chip, and to facilitate electrical connection with external terminals. In addition, it is possible to realize a solid-state imaging device having a highly reliable hermetic sealing portion.
【００１５】請求項４に係る発明は、請求項１〜３のい
ずれか１項に係る固体撮像装置において、前記枠部は、
該枠部を構成する無機材料の着色などによる遮光機能を
備えていることを特徴とするものである。このように構
成することにより、枠部が不要な光を遮り、固体撮像素
子チップに対する迷光や固体撮像素子チップ上での反射
などによる悪影響を防ぐことができる。According to a fourth aspect of the present invention, in the solid-state imaging device according to any one of the first to third aspects, the frame portion includes:
It is characterized by having a light-shielding function by coloring the inorganic material constituting the frame portion. With such a configuration, the frame portion blocks unnecessary light, and it is possible to prevent adverse effects due to stray light on the solid-state imaging device chip, reflection on the solid-state imaging device chip, and the like.
【００１６】請求項５に係る発明は、請求項３に係る固
体撮像装置において、前記固体撮像素子チップ側面ある
いは該側面から裏面に亘って配線領域もしくは電極パッ
ド領域を形成すると共に、該配線領域もしくは電極パッ
ド領域を前記入出力信号配線を介して固体撮像素子チッ
プ上の電極パッドと電気的に接続し、前記配線領域もし
くは電極パッド領域に外部端子を電気的に接続できるよ
うに構成したことを特徴とするものである。このように
構成することにより、固体撮像素子チップと外部端子と
の最適な電気的接続構造を提供することができると共
に、種々の実装形態への応用も可能となる。According to a fifth aspect of the present invention, in the solid-state imaging device according to the third aspect, a wiring region or an electrode pad region is formed from the side surface of the solid-state imaging device chip or from the side surface to the back surface. An electrode pad area is electrically connected to an electrode pad on a solid-state imaging device chip via the input / output signal wiring, and an external terminal can be electrically connected to the wiring area or the electrode pad area. It is assumed that. With such a configuration, it is possible to provide an optimal electrical connection structure between the solid-state imaging device chip and the external terminals, and also possible to apply the present invention to various mounting forms.
【００１７】請求項６に係る発明は、固体撮像素子チッ
プ上に、透明部材からなる平板部と該平板部の下面縁部
に配設された枠部とで構成された気密封止部を設けた固
体撮像装置の製造方法において、多数の固体撮像素子チ
ップが形成されているウエーハの各固体撮像素子チップ
の少なくとも受光部に対応する領域に穴あき部を有する
枠部となる無機材料を、平板部となる透明部材上に形成
する工程と、ウエーハに対し前記無機材料を介して透明
部材を接合する工程と、ウエーハ及び透明部材を個々の
気密封止部をもった固体撮像素子チップに分割する工程
とを備えていることを特徴とするものである。このよう
な工程を用いることにより、ウエーハ状態での各固体撮
像素子チップに気密封止部を一括して形成することが可
能となり、したがって固体撮像素子チップ上に合わせ精
度のよい気密封止部を備えた固体撮像装置を容易に製造
することが可能となる。According to a sixth aspect of the present invention, an airtight sealing portion is provided on a solid-state image pickup device chip, the sealing portion comprising a flat plate portion made of a transparent member and a frame portion disposed on the lower edge of the flat plate portion. In the method for manufacturing a solid-state imaging device, an inorganic material to be a frame portion having a perforated portion in a region corresponding to at least a light receiving portion of each solid-state imaging device chip of a wafer on which a large number of solid-state imaging device chips are formed, is flat-plated. Forming on a transparent member to be a part, bonding the transparent member to the wafer via the inorganic material, and dividing the wafer and the transparent member into solid-state imaging device chips having individual hermetic sealing portions. And a process. By using such a process, it is possible to collectively form a hermetic sealing portion on each solid-state imaging device chip in a wafer state, and therefore, it is possible to form a highly accurate hermetic sealing portion on the solid-state imaging device chip. It is possible to easily manufacture the solid-state imaging device provided.
【００１８】[0018]
【発明の実施の形態】次に、本発明に係る実施の形態に
ついて説明する。まず、本発明の第１の実施の形態につ
いて説明する。図１及び図２は、第１の実施の形態に係
る固体撮像装置の平面図及び断面図を示している。両図
において、１は固体撮像素子チップで、５は透明部材か
らなる平板部であり、該平板部５の下面縁部には、固体
撮像素子チップ１の受光部２に対応する領域を除く封止
領域４に無機材料６が形成されており、該平板部５上の
無機材料６が固体撮像素子チップ１と接着剤７により接
着されている。したがって、無機材料６からなる枠部８
と、透明部材からなる平板部５とで気密封止部３が形成
されている。気密封止部３は、受光部２に対応する領域
のみの開口で十分であるが、固体撮像素子チップ全体を
被気密封止領域３ａとしてもよい。Next, an embodiment according to the present invention will be described. First, a first embodiment of the present invention will be described. 1 and 2 show a plan view and a cross-sectional view of the solid-state imaging device according to the first embodiment. In both figures, 1 is a solid-state imaging device chip, 5 is a flat plate portion made of a transparent member, and a lower surface edge portion of the flat plate portion 5 is sealed except a region corresponding to the light receiving section 2 of the solid-state imaging device chip 1. An inorganic material 6 is formed in the stop region 4, and the inorganic material 6 on the flat plate portion 5 is bonded to the solid-state imaging device chip 1 with an adhesive 7. Therefore, the frame portion 8 made of the inorganic material 6
And the flat plate portion 5 made of a transparent member, the hermetic sealing portion 3 is formed. It is sufficient for the hermetic sealing portion 3 to have an opening only in a region corresponding to the light receiving portion 2, but the entire solid-state imaging device chip may be the hermetically sealed region 3a.
【００１９】ここで、枠部８となる無機材料６として
は、塗布もしくは積層材料としてのSiＯ2 （シリコン酸
化膜）や、紺青やカーボンブラックなどの無機顔料など
が望ましい。平板部５となる透明部材としては、ガラ
ス，石英，サファイヤなどが望ましい。また固体撮像素
子チップ１と無機材料６からなる枠部８を接着するため
の接着剤７は、エポキシ系あるいはシリコン系の樹脂な
どが適しているが、所望の接着力が得られ、且つ水分等
の侵入を防ぎ高信頼性を得るために薄く接着層が形成で
きるものであれば何を用いてもよい。なお、図１におい
て、９は受光部２の周辺回路を示している。Here, as the inorganic material 6 to be the frame portion 8, SiO 2 (silicon oxide film) as a coating or laminating material, an inorganic pigment such as navy blue or carbon black is desirable. Glass, quartz, sapphire, or the like is desirable as the transparent member to be the flat plate portion 5. As the adhesive 7 for bonding the solid-state imaging device chip 1 and the frame portion 8 made of the inorganic material 6, an epoxy-based or silicon-based resin or the like is suitable, but a desired adhesive strength can be obtained, and moisture or the like can be obtained. Any material can be used as long as it can form a thin adhesive layer in order to prevent the intrusion of the adhesive and obtain high reliability. In FIG. 1, reference numeral 9 denotes a peripheral circuit of the light receiving unit 2.
【００２０】次に、上記第１の実施の形態に係る固体撮
像装置の製造方法の概略の工程について説明する。ま
ず、図３に示すように多数の固体撮像素子チップからな
るウエーハ12に対応する大きさの、平板部となる透明部
材10上に、SiＯ2 などの無機材料を、スピンコート等の
塗布や、ＣＶＤ装置などで積層することにより、無機材
料の膜11を形成する。続いて、フォトリソ技術、現像及
びエッチングという工程などの前工程プロセスを利用し
て、ウエーハ12の各固体撮像素子チップ１の受光部に対
応する領域に穴あき部11ａを形成し、所望の形状となる
ように枠部８を形成する。あるいは、枠部８は穴あき部
11ａが所望の形状に開口するように、透明部材10上に直
接無機材料のパターンを印刷形成して構成するなどして
もよいが、所望の形状に無機材料による枠部８が形成可
能であれば、その手段は問わない。Next, the schematic steps of the method for manufacturing the solid-state imaging device according to the first embodiment will be described. First, as shown in FIG. 3, an inorganic material such as SiO 2 is applied to a transparent member 10 serving as a flat plate portion having a size corresponding to a wafer 12 including a large number of solid-state imaging device chips by spin coating or the like. The film 11 of an inorganic material is formed by laminating with a CVD device or the like. Subsequently, a perforated portion 11a is formed in a region corresponding to the light receiving portion of each solid-state imaging device chip 1 of the wafer 12 by using a pre-process such as a photolithography technology, a process of development and etching, and a desired shape and shape are formed. The frame portion 8 is formed so as to be formed. Or the frame part 8 is a perforated part
A pattern of an inorganic material may be directly formed on the transparent member 10 by printing so that the opening 11a has a desired shape. However, the frame 8 made of the inorganic material can be formed in a desired shape. Any means can be used.
【００２１】その後、図４及び図５に示すように、固体
撮像素子チップ１が形成されているウエーハ12上に、枠
部８を形成した透明部材10を接着剤７を介して接着す
る。最後に、透明部材10を接着したウエーハ12を個々の
固体撮像装置に分割するためのスクライブライン13に沿
ってダイシングすることにより、図２に示すような固体
撮像素子チップ１上に気密封止部３をもった固体撮像装
置が完成する。Thereafter, as shown in FIGS. 4 and 5, a transparent member 10 having a frame 8 formed thereon is bonded to a wafer 12 on which the solid-state image pickup device chip 1 is formed via an adhesive 7. Finally, the wafer 12 to which the transparent member 10 is bonded is diced along a scribe line 13 for dividing the wafer 12 into individual solid-state imaging devices. 3 is completed.
【００２２】ここで、固体撮像素子チップ１には、マイ
クロレンズあるいはカラーフィルタなどがオンチップで
形成されていてもよいし、貼り合わせ等によって形成さ
れていてもよい。また、平板部となる透明部材10のウエ
ーハ12への接着については、ウエーハ12における固体撮
像素子チップ１の製造時におけるアライメントマークを
利用することができ、正確な位置合わせが可能となるた
め、固体撮像素子チップ１上に精度よく気密封止部を形
成できる。Here, the solid-state imaging device chip 1 may be formed with a micro lens, a color filter, or the like on-chip, or may be formed by bonding or the like. Further, regarding the adhesion of the transparent member 10 serving as a flat plate portion to the wafer 12, an alignment mark at the time of manufacturing the solid-state imaging device chip 1 on the wafer 12 can be used, and accurate alignment can be performed. The hermetic sealing portion can be formed on the imaging element chip 1 with high accuracy.
【００２３】このように、気密封止部３の枠部８を無機
材料で形成することにより、同じく無機材料である平板
部５との熱膨脹係数の差がなくなるか、あるいは差が非
常に小さくなって、熱膨脹係数の差による枠部８へのク
ラックやひずみの発生が防止できると共に、枠部８から
の水分の侵入による湿度に対しての信頼性の低下も防止
できる。したがって、高い信頼性の気密封止部を備えた
固体撮像装置を実現することができる。As described above, by forming the frame portion 8 of the hermetically sealed portion 3 from an inorganic material, the difference in the coefficient of thermal expansion from the flat plate portion 5 which is also an inorganic material is eliminated or the difference is extremely reduced. Accordingly, it is possible to prevent cracks and strains from being generated in the frame portion 8 due to a difference in thermal expansion coefficient, and also possible to prevent a decrease in reliability with respect to humidity due to intrusion of moisture from the frame portion 8. Therefore, a solid-state imaging device having a highly reliable hermetic sealing portion can be realized.
【００２４】次に、本発明に係る固体撮像装置の第２の
実施の形態について説明する。図６及び図７に、それぞ
れ第２の実施の形態に係わる固体撮像装置の断面図及び
その製造方法を説明するための枠部の平面図を示す。こ
の第２の実施の形態は、無機材料で形成した枠部の下端
面に金属配線を形成し、この金属配線を介して固体撮像
素子チップ１のＩ／Ｏパッド部より電気信号を素子チッ
プ端まで引き出し、外部端子との電気的接続を容易に行
えるように構成したものである。なお、この実施の形態
における気密封止部の枠部の構成は、基本的には第１の
実施の形態と同様である。なお、この第２の実施の形態
における図示例では、固体撮像素子チップにおける受光
部はチップの中央部分に配置されているものとして示し
ている。Next, a second embodiment of the solid-state imaging device according to the present invention will be described. 6 and 7 are a cross-sectional view of the solid-state imaging device according to the second embodiment and a plan view of a frame portion for explaining a method of manufacturing the solid-state imaging device, respectively. In the second embodiment, a metal wiring is formed on a lower end surface of a frame portion formed of an inorganic material, and an electric signal is transmitted from an I / O pad portion of the solid-state imaging device chip 1 through the metal wiring to the end of the element chip. It is configured so that it can be easily pulled out and electrically connected to external terminals. The configuration of the frame portion of the hermetic sealing portion in this embodiment is basically the same as in the first embodiment. In the illustrated example of the second embodiment, the light receiving section of the solid-state imaging device chip is shown as being arranged at the center of the chip.
【００２５】次に、図６に基づいて、この実施の形態に
係る固体撮像装置の構成を詳細に説明する。図６におい
て、１は固体撮像素子チップで、無機材料６からなる枠
部８が下面縁部に形成された透明部材からなる平板部５
が、接着剤７を介して固体撮像素子チップ１と接着され
る。固体撮像素子チップ１と接着される側の枠部８の下
端面には入出力信号配線14が形成されている。したがっ
て、透明部材からなる平板部５と、入出力信号配線14が
形成された枠部８とにより、気密封止部３が形成されて
いる。ここで、入出力信号配線14は、固体撮像素子チッ
プ１のＩ／Ｏパッド部より電気信号を引き出すための配
線であり、Ｉ／Ｏパッド部を延長したものと等価であ
る。Next, the configuration of the solid-state imaging device according to this embodiment will be described in detail with reference to FIG. In FIG. 6, reference numeral 1 denotes a solid-state imaging device chip, and a flat plate portion 5 made of a transparent member having a frame portion 8 made of an inorganic material 6 formed on the lower edge.
Is adhered to the solid-state imaging device chip 1 via an adhesive 7. An input / output signal wiring 14 is formed on the lower end surface of the frame 8 on the side to be bonded to the solid-state imaging device chip 1. Therefore, the hermetic sealing portion 3 is formed by the flat plate portion 5 made of a transparent member and the frame portion 8 on which the input / output signal wiring 14 is formed. Here, the input / output signal wiring 14 is a wiring for extracting an electric signal from the I / O pad section of the solid-state imaging device chip 1, and is equivalent to an extension of the I / O pad section.
【００２６】この入出力信号配線14としては、アルミニ
ウムあるいはアルミニウムにＡu やＮi をメッキしたも
のが挙げられるが、十分に電気伝導性があり、所望の形
状に形成できるものであれば何を用いてもよい。そし
て、平板部５となる透明部材の材質としては、ガラス，
石英，サファイヤなどが望ましい。また固体撮像素子チ
ップ１と枠部８を接着するための接着剤７は、エポキシ
系あるいはシリコン系の樹脂が適しているが、所望の接
着力が得られ、且つ水分等の侵入を防ぎ高信頼性を得る
ために薄く接着層が形成できるものであれば、何を用い
てもよい。Examples of the input / output signal wiring 14 include aluminum or aluminum plated with Au or Ni. However, any material may be used as long as it has sufficient electric conductivity and can be formed into a desired shape. Is also good. The material of the transparent member to be the flat plate portion 5 is glass,
Quartz, sapphire, etc. are desirable. The adhesive 7 for bonding the solid-state imaging device chip 1 and the frame portion 8 is preferably an epoxy-based or silicon-based resin. However, a desired adhesive strength can be obtained, and moisture and the like can be prevented from entering and highly reliable. Any material can be used as long as it can form a thin adhesive layer in order to obtain the property.
【００２７】次に、上記第２の実施の形態に係る固体撮
像装置の製造方法を図７に基づいて説明する。この２の
実施の形態の製造方法は、基本的には第１の実施の形態
の固体撮像装置の製造方法と同様であるため、詳細な説
明は省略し、入出力信号配線に関連する部分の製法につ
いてのみ説明する。この製法においては、第１の実施の
形態で説明したように、平板部となる透明部材上へ所定
形状の無機材料からなる枠部８を形成した後、枠部８の
端面に入出力信号配線14を形成する。この入出力信号配
線14の形成にあたっては、入出力信号配線パターンを枠
部８の端面に直接印刷して形成する方法、配線材料を枠
部８に真空蒸着あるいはスパッタなどにより蒸着形成し
た後、フォトリソ技術、現像及びエッチングにより枠部
表面に形成する方法、もしくはダマシンプロセスを初め
としたＣＭＰ方などにより、枠部８に埋め込む形で形成
する方法などを用いることができるが、これらに限定さ
れるものではなく、所望の配線パターンが形成可能であ
れば、どんな方法を用いてもよい。Next, a method of manufacturing the solid-state imaging device according to the second embodiment will be described with reference to FIG. Since the manufacturing method of the second embodiment is basically the same as the manufacturing method of the solid-state imaging device of the first embodiment, a detailed description is omitted, and a portion related to input / output signal wiring is omitted. Only the manufacturing method will be described. In this manufacturing method, as described in the first embodiment, after a frame portion 8 made of a predetermined shape inorganic material is formed on a transparent member serving as a flat plate portion, an input / output signal wiring is formed on an end face of the frame portion 8. Form 14. In forming the input / output signal wiring 14, a method of directly forming an input / output signal wiring pattern on the end face of the frame 8 by forming a wiring material on the frame 8 by vacuum evaporation or sputtering, and then forming a photolithography Techniques, a method of forming on the surface of the frame by development and etching, or a method of forming by embedding in the frame 8 by a CMP method such as a damascene process can be used, but are not limited thereto. Instead, any method may be used as long as a desired wiring pattern can be formed.
【００２８】また、入出力信号配線14の形成した枠部８
を備えた透明部材をウエーハ12に接着する際、固体撮像
素子チップ１のＩ／Ｏパッドと入出力信号配線14との接
点に、接着剤７が入り込まないようにする必要がある。
そのため、接着剤７は、粘度の高いものを用いてポッテ
ィングなどで少量滴下して接着する手法や、入出力信号
配線14の周辺部に印刷することなどの手法が用いられる
が、所望の接着力が得られ、且つ高い信頼性が得られる
ように水分等の侵入を防ぐと共に、薄い接着層が形成で
きれば、その手段は問わない。Further, the frame portion 8 on which the input / output signal wiring 14 is formed
When the transparent member provided with the above is bonded to the wafer 12, it is necessary to prevent the adhesive 7 from entering the contact between the I / O pad of the solid-state imaging device chip 1 and the input / output signal wiring 14.
For this purpose, a method of bonding a small amount of adhesive 7 by dropping it by potting or the like using a high-viscosity adhesive or a method of printing on the periphery of the input / output signal wiring 14 are used. Any means can be used as long as it can prevent water and the like from entering so as to obtain high reliability and can form a thin adhesive layer.
【００２９】また、固体撮像素子チップ１のＩ／Ｏパッ
ドと入出力信号配線14とは、フリップチップ接合により
接続するなどしてもよいが、その際もウエーハ12と、入
出力信号配線14が形成された枠部８の隙間は、接着剤７
で埋められることで高信頼性を得るために、薄く接着層
を形成する必要があることは言うまでもない。The I / O pad of the solid-state imaging device chip 1 and the input / output signal wiring 14 may be connected by flip-chip bonding. In this case, the wafer 12 and the input / output signal wiring 14 are also connected. The gap between the formed frame portions 8 is
Needless to say, it is necessary to form a thin adhesive layer in order to obtain high reliability by being buried with.
【００３０】なお、本実施の形態においては、以上のよ
うに、透明部材からなる平板部上に無機材料からなる枠
部を形成すると共に枠部上に入出力信号配線を形成し
て、枠部と固体撮像素子チップとを接着することにより
気密封止部を形成する構成及びその製造方法を示した
が、第１の実施の形態と同様に、あらかじめ入出力信号
配線が形成された無機材料からなる枠部を別途形成し
て、透明部材からなる平板部及び固体撮像素子チップの
両方に接着剤により接着するようにしてもよい。この場
合、枠部への入出力信号配線の形成並びに枠部の平板部
及び固体撮像素子チップへの接着に関しては、上記第２
の実施の形態に関して説明したような方法、手段で可能
である。In this embodiment, as described above, the frame portion made of the inorganic material is formed on the flat plate portion made of the transparent member, and the input / output signal wiring is formed on the frame portion. And a method of manufacturing the same by forming a hermetic sealing portion by adhering the semiconductor device chip and the solid-state image sensor chip. However, as in the first embodiment, an inorganic material in which input / output signal wiring is formed in advance is used. The frame portion may be separately formed, and may be bonded to both the flat plate portion made of a transparent member and the solid-state imaging device chip with an adhesive. In this case, regarding the formation of the input / output signal wiring on the frame portion and the adhesion of the frame portion to the flat plate portion and the solid-state imaging device chip, the second
It is possible by the method and means as described with respect to the embodiment.
【００３１】また、上記第２の実施の形態において、固
体撮像素子チップにはマイクロレンズあるいはカラーフ
ィルタなどがオンチップで形成されていてもよいし、貼
り合わせ等によって形成されていてもよい。また、平板
部を形成する透明部材のウエーハへの接着については、
ウエーハにおける固体撮像素子チップの製造時における
アライメントマークを利用することができ、正確な位置
合わせが可能となるため、固体撮像素子チップ上に精度
よく気密封止部を形成できる。In the second embodiment, the solid-state imaging device chip may be formed with a microlens or a color filter on-chip, or may be formed by bonding or the like. In addition, regarding the adhesion of the transparent member forming the flat plate portion to the wafer,
Since alignment marks at the time of manufacturing the solid-state imaging device chip on the wafer can be used and accurate positioning can be performed, a hermetic sealing portion can be formed on the solid-state imaging device chip with high accuracy.
【００３２】このように、気密封止部の枠部を無機材料
で形成すると共に、枠部に入出力信号配線を形成して固
体撮像素子チップのＩ／Ｏパッドと接続することによ
り、第１の実施の形態で示した効果と共に、固体撮像素
子チップと外部端子との電気的接続を容易に行うことが
可能となる。As described above, the frame portion of the hermetic sealing portion is formed of an inorganic material, and the input / output signal wiring is formed in the frame portion and connected to the I / O pad of the solid-state image pickup device chip. In addition to the effects described in the above embodiments, the electrical connection between the solid-state imaging device chip and the external terminals can be easily performed.
【００３３】また、枠部の形成方法に関しては、無機材
料である平板部すなわち透明部材そのものに対して、受
光部に対応する部分をエッチングなどして凹型に加工を
施し、透明部材上に同素材による枠部を残す方法によ
り、気密封止部を形成することが可能であることは言う
までもない。また、このように形成した枠部上に入出力
信号配線を形成することも可能である。As for the method of forming the frame portion, a flat portion made of an inorganic material, that is, the transparent member itself is processed into a concave shape by etching the portion corresponding to the light receiving portion, and the same material is formed on the transparent member. It is needless to say that the hermetic sealing portion can be formed by the method of leaving the frame portion according to the above. Further, it is also possible to form input / output signal wiring on the frame portion formed in this way.
【００３４】更に、枠部８を構成する無機材料と接着剤
の両方もしくはいずれか一方において、黒色など光を遮
光するように着色したものを使用することにより、封止
領域４における枠部８が遮光部の役目を果たすことにな
り、固体撮像素子チップ１上への不要な光を遮ることが
できる。したがって、迷光や固体撮像素子チップ上での
反射などによる悪影響を防ぐことができる。Further, by using one or both of the inorganic material and the adhesive constituting the frame portion 8 which are colored so as to block light such as black, the frame portion 8 in the sealing region 4 can be formed. This serves as a light-shielding portion, so that unnecessary light onto the solid-state imaging device chip 1 can be blocked. Therefore, adverse effects due to stray light, reflection on the solid-state imaging device chip, and the like can be prevented.
【００３５】次に、上記のように構成された固体撮像装
置の外部端子との具体的な電気的接続手法について説明
する。図８は、外部端子との具体的な電気的接続の構成
例を示す断面図で、固体撮像素子チップ１の側面もしく
は側面から裏面まで配線領域15を形成し、該配線領域15
上に新たな電極パッドを設けてバンプ等により基板など
へ接続してもよい。この構成において、固体撮像素子チ
ップ１上のＩ／Ｏパッドと接続されて枠部８に形成され
た入出力信号配線14と上記配線領域15とを接続すること
により、容易に外部端子との電気的接続が可能となる。Next, a description will be given of a specific electrical connection method with the external terminals of the solid-state imaging device configured as described above. FIG. 8 is a cross-sectional view showing a specific configuration example of electrical connection with an external terminal. A wiring region 15 is formed from the side surface or the side surface to the back surface of the solid-state imaging device chip 1.
A new electrode pad may be provided thereon and connected to a substrate or the like by a bump or the like. In this configuration, by connecting the input / output signal wiring 14 formed on the frame portion 8 and connected to the I / O pad on the solid-state imaging device chip 1 and the wiring area 15, the electrical connection with the external terminal can be easily performed. Connection is possible.
【００３６】この場合、気密封止部３の枠部８による封
止領域は固体撮像素子チップ１のパッド部分を除外する
必要はなく、受光部２あるいは受光部２と周辺回路部分
を含むチップ全体が気密封止されるように、枠部８によ
る封止領域を形成すればよい。またチップ側面の配線領
域15に、図９で示したような外部リードなどを接続し
て、外部端子との電気的接続を図ってもよい。In this case, it is not necessary to exclude the pad portion of the solid-state image pickup device chip 1 from the sealing region of the hermetic sealing portion 3 by the frame portion 8, and the light receiving portion 2 or the entire chip including the light receiving portion 2 and the peripheral circuit portion What is necessary is just to form the sealing area | region by the frame part 8 so that may be airtightly sealed. Further, an external lead or the like as shown in FIG. 9 may be connected to the wiring region 15 on the side surface of the chip to achieve an electrical connection with an external terminal.
【００３７】このような構成とすることにより、パッケ
ージが不要となって各種基板、例えば信号処理回路など
が形成された回路基板などへのチップサイズの固体撮像
装置の直接の搭載が可能になる。更に、固体撮像素子チ
ップ裏面に設けた配線領域あるいは電極パッドなどによ
り、信号発生回路や信号処理回路などが形成された半導
体チップとの貼り合わせ、接着が容易に行われる。した
がって、固体撮像素子チップ、信号処理回路などが一体
に形成される積層構造の固体撮像装置も容易に製作可能
となり、周辺回路を含めた固体撮像装置のさらなる小型
化が実現できる。With such a configuration, a package is not required, and a solid-state image pickup device having a chip size can be directly mounted on various substrates, for example, a circuit substrate on which a signal processing circuit is formed. Further, the wiring region or the electrode pad provided on the back surface of the solid-state imaging device chip can easily bond and bond the semiconductor chip on which the signal generation circuit, the signal processing circuit, and the like are formed. Therefore, a solid-state imaging device having a stacked structure in which a solid-state imaging device chip, a signal processing circuit, and the like are integrally formed can be easily manufactured, and further downsizing of the solid-state imaging device including peripheral circuits can be realized.
【００３８】なお、本発明は固体撮像素子チップを気密
封止して実装した固体撮像装置に関するものであるが、
この固体撮像素子チップの気密封止実装手法は、他の半
導体チップの気密封止実装にも十分適用できるものであ
り、同様な効果が期待できる。The present invention relates to a solid-state imaging device in which a solid-state imaging device chip is hermetically sealed and mounted.
The method of hermetically sealing and mounting the solid-state imaging element chip can be sufficiently applied to the hermetically sealing mounting of another semiconductor chip, and similar effects can be expected.
【００３９】[0039]
【発明の効果】以上実施の形態に基づいて説明したよう
に、本発明によれば、小型化が可能であると共に製法が
簡単で、ウエーハレベルで製造可能な精度のよい高い信
頼性のある気密封止部を備えた固体撮像装置及びその製
造方法を実現することができる。特に請求項１及び２に
係る発明によれば、小型化が可能で且つ枠部へのクラッ
クやひずみを防止すると共に、水分の侵入による湿度に
対しての信頼性の低下を防止できる信頼性の高い気密封
止部を備えた固体撮像装置を実現することができる。ま
た請求項３に係る発明によれば、小型化が可能で、固体
撮像素子チップのＩ／Ｏパッドからの電気信号を固体撮
像素子チップ端部まで引き出すことができ、外部端子と
の電気的接続を容易にし、且つ高い信頼性の気密封止部
を備えた固体撮像装置を実現することができる。また請
求項４に係る発明によれば、枠部が不要な光を遮り、固
体撮像素子チップに対する迷光や固体撮像素子チップ上
での反射などによる悪影響を防止することができる。ま
た請求項５に係る発明によれば、固体撮像素子チップ上
と外部端子との電気的接続が容易になると共に、さらに
パッケージを不要とし、信号処理回路や周辺回路などの
回路基板あるいは他の半導体チップとの接続が容易で、
且つそれらの回路基板などと一体構造とすることの可能
な固体撮像装置を実現することができる。また請求項６
に係る発明によれば、ウエーハ状態での各固体撮像素子
チップに気密封止部を一括して形成することが可能とな
り、固体撮像素子チップ上に合わせ精度のよい気密封止
部を備えた固体撮像装置を容易に製造することができ
る。As described above with reference to the embodiments, according to the present invention, it is possible to reduce the size, to simplify the manufacturing method, and to manufacture a wafer with a high degree of accuracy and high reliability. A solid-state imaging device having a hermetically sealed portion and a method for manufacturing the same can be realized. In particular, according to the first and second aspects of the present invention, it is possible to reduce the size and to prevent cracks and distortions in the frame portion, and to prevent a decrease in reliability against humidity due to intrusion of moisture. A solid-state imaging device including a high hermetic sealing portion can be realized. According to the third aspect of the present invention, miniaturization is possible, and an electric signal from an I / O pad of the solid-state imaging device chip can be extracted to an end of the solid-state imaging device chip, and an electric connection with an external terminal can be obtained. And a solid-state imaging device having a highly reliable hermetic sealing portion can be realized. Further, according to the invention of claim 4, the frame portion blocks unnecessary light, and it is possible to prevent adverse effects due to stray light on the solid-state imaging device chip, reflection on the solid-state imaging device chip, and the like. According to the fifth aspect of the present invention, the electrical connection between the solid-state imaging device chip and the external terminals is facilitated, the package is not required, and a circuit board such as a signal processing circuit or a peripheral circuit or another semiconductor is provided. Easy connection with chip,
In addition, a solid-state imaging device that can be integrated with those circuit boards or the like can be realized. Claim 6
According to the invention according to the above, it is possible to collectively form a hermetic sealing portion on each solid-state imaging device chip in a wafer state, and to provide a solid-state having a highly accurate hermetic sealing portion on the solid-state imaging device chip. An imaging device can be easily manufactured.
【図１】本発明に係わる固体撮像装置の第１の実施の形
態を示す平面図である。FIG. 1 is a plan view showing a first embodiment of a solid-state imaging device according to the present invention.
【図２】本発明に係わる固体撮像装置の第１の実施の形
態を示す断面図である。FIG. 2 is a cross-sectional view showing a first embodiment of the solid-state imaging device according to the present invention.
【図３】図１及び図２に示した第１の実施の形態に係る
固体撮像装置の製造工程を示す図である。FIG. 3 is a diagram illustrating a manufacturing process of the solid-state imaging device according to the first embodiment illustrated in FIGS. 1 and 2;
【図４】図３に示した製造工程に続く製造工程を示す図
である。FIG. 4 is a view showing a manufacturing process following the manufacturing process shown in FIG. 3;
【図５】図４に示した製造工程に続く製造工程を示す図
である。FIG. 5 is a view showing a manufacturing process subsequent to the manufacturing process shown in FIG. 4;
【図６】本発明に係わる固体撮像装置の第２の実施の形
態を示す断面図である。FIG. 6 is a cross-sectional view illustrating a solid-state imaging device according to a second embodiment of the present invention.
【図７】図６に示した第２の実施の形態に係る固体撮像
装置の製造工程を示す平面図である。FIG. 7 is a plan view illustrating a manufacturing process of the solid-state imaging device according to the second embodiment illustrated in FIG. 6;
【図８】図７に示した第２の実施の形態に係る固体撮像
装置の実装形態を示す断面図である。FIG. 8 is a cross-sectional view illustrating a mounting form of the solid-state imaging device according to the second embodiment illustrated in FIG. 7;
【図９】従来の気密封止部を備えた固体撮像装置の実装
方式を示す断面図である。FIG. 9 is a cross-sectional view illustrating a mounting method of a conventional solid-state imaging device including a hermetically sealed portion.
【図10】従来の気密封止部を備えた固体撮像装置の構成
例を示す断面図である。FIG. 10 is a cross-sectional view illustrating a configuration example of a conventional solid-state imaging device including a hermetically sealed portion.
【図11】従来の気密封止部を備えた固体撮像装置の他の
構成例を示す断面図である。FIG. 11 is a cross-sectional view illustrating another configuration example of a solid-state imaging device including a conventional hermetic sealing portion.
１ 固体撮像素子チップ ２ 受光部 ３ 気密封止部 ３ａ 被気密封止領域 ４ 封止領域 ５ 平板部 ６ 無機材料 ７ 接着剤 ８ 枠部 ９ 周辺回路 10 透明部材 11 無機材料膜 11ａ 穴あき部 12 ウエーハ 13 スクライブライン 14 入出力信号配線 15 配線領域 DESCRIPTION OF SYMBOLS 1 Solid-state image sensor chip 2 Light-receiving part 3 Airtight sealing part 3a Airtight sealing area 4 Sealing area 5 Flat plate part 6 Inorganic material 7 Adhesive 8 Frame part 9 Peripheral circuit 10 Transparent member 11 Inorganic material film 11a Perforated part 12 Wafer 13 Scribe line 14 I / O signal wiring 15 Wiring area
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮田 憲治 東京都渋谷区幡ケ谷２丁目43番２号 オリ ンパス光学工業株式会社内 Ｆターム(参考） 4M118 AA08 AA10 AB01 EA01 GB01 HA02 HA23 HA31 5C024 CY47 CY48 EX22 EX23 HX01 5F088 BA15 BA18 BB03 EA04 FA09 GA03 GA08 GA10 HA20 JA05 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kenji Miyata 2-43-2 Hatagaya, Shibuya-ku, Tokyo F-term in Olympus Optical Co., Ltd. (reference) 4M118 AA08 AA10 AB01 EA01 GB01 HA02 HA23 HA31 5C024 CY47 CY48 EX22 EX23 HX01 5F088 BA15 BA18 BB03 EA04 FA09 GA03 GA08 GA10 HA20 JA05
Claims (6)
なる平板部と該平板部の下面縁部に配設された枠部とで
構成された気密封止部を設けた固体撮像装置において、
前記枠部は前記透明部材からなる平板部と熱膨脹係数が
ほぼ等しい無機材料で構成されていることを特徴とする
固体撮像装置。1. A solid-state imaging device provided with a hermetically sealed portion formed on a solid-state imaging element chip by a flat plate portion made of a transparent member and a frame portion disposed on a lower edge of the flat plate portion.
The solid-state imaging device according to claim 1, wherein the frame portion is made of an inorganic material having substantially the same thermal expansion coefficient as a flat plate portion made of the transparent member.
は別個に形成され、該平板部の下面縁部に接合されてい
ることを特徴とする請求項１に係る固体撮像装置。2. The solid-state imaging device according to claim 1, wherein the frame portion is formed separately from a flat plate portion made of a transparent member, and is joined to a lower surface edge of the flat plate portion.
入出力信号配線を備えていることを特徴とする請求項１
又は２に係る固体撮像装置。3. The device according to claim 1, wherein the frame portion includes an input / output signal wiring for connecting to an external electrode.
Or the solid-state imaging device according to 2.
の着色などによる遮光機能を備えていることを特徴とす
る請求項１〜３のいずれか１項に係る固体撮像装置。4. The solid-state imaging device according to claim 1, wherein the frame has a light-shielding function by coloring an inorganic material forming the frame.
側面から裏面に亘って配線領域もしくは電極パッド領域
を形成すると共に、該配線領域もしくは電極パッド領域
を前記入出力信号配線を介して固体撮像素子チップ上の
電極パッドと電気的に接続し、前記配線領域もしくは電
極パッド領域に外部端子を電気的に接続できるように構
成したことを特徴とする請求項３に係る固体撮像装置。5. A solid-state imaging device chip, wherein a wiring region or an electrode pad region is formed from the side surface of the solid-state imaging device chip or from the side surface to the back surface, and the wiring region or the electrode pad region is formed through the input / output signal wiring. 4. The solid-state imaging device according to claim 3, wherein the solid-state imaging device is configured to be electrically connected to the upper electrode pad so that an external terminal can be electrically connected to the wiring region or the electrode pad region.
なる平板部と該平板部の下面縁部に配設された枠部とで
構成された気密封止部を設けた固体撮像装置の製造方法
において、多数の固体撮像素子チップが形成されている
ウエーハの各固体撮像素子チップの少なくとも受光部に
対応する領域に穴あき部を有する枠部となる無機材料
を、平板部となる透明部材上に形成する工程と、ウエー
ハに対し前記無機材料を介して透明部材を接合する工程
と、ウエーハ及び透明部材を個々の気密封止部をもった
固体撮像素子チップに分割する工程とを備えていること
を特徴とする固体撮像装置の製造方法。6. Manufacturing of a solid-state imaging device provided with a hermetically sealed portion formed on a solid-state imaging element chip by a flat plate portion made of a transparent member and a frame portion disposed on a lower edge of the flat plate portion. In the method, an inorganic material to be a frame having a hole at least in a region corresponding to a light receiving portion of each solid-state image sensor chip of a wafer on which a large number of solid-state image sensor chips are formed is coated on a transparent member to be a flat plate portion. Forming, a step of bonding a transparent member to the wafer via the inorganic material, and a step of dividing the wafer and the transparent member into solid-state image pickup device chips having individual hermetic sealing portions. A method for manufacturing a solid-state imaging device, comprising:
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|---|---|---|---|
| JP2001029511A JP2002231921A (en) | 2001-02-06 | 2001-02-06 | Solid-state image pickup device and its manufacturing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001029511A JP2002231921A (en) | 2001-02-06 | 2001-02-06 | Solid-state image pickup device and its manufacturing method |
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Family
ID=18893854
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|---|---|---|---|
| JP2001029511A Pending JP2002231921A (en) | 2001-02-06 | 2001-02-06 | Solid-state image pickup device and its manufacturing method |
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