JP2002231795A - Susceptor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a semiconductor substrate from dropping when it is received in a processing unit, to increase the number of semiconductor substrates to be processed in a batch, and to improve processing efficiency in a susceptor for holding the semiconductor substrates in a semiconductor manufacturing process. SOLUTION: Trenches 11a to 11f each of which is shaped like a semiconductor substrate and receives the semiconductor substrate are formed on the top surface of a susceptor 10, and each of the trenches directly supports the semiconductor substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a susceptor for holding a semiconductor substrate at the time of manufacturing a semiconductor device, and more particularly to a susceptor capable of improving the processing efficiency during an ashing process.

[0002]

2. Description of the Related Art A semiconductor device is manufactured mainly by depositing an oxide film or a nitride film on a silicon substrate or the like, which is a semiconductor substrate, by oxidation or CVD (Chemical Vapor Deposition). Film / nitride film deposition process, ion implantation / heat treatment process for forming impurity regions of the device, metal film deposition process for depositing a metal film serving as a wiring connecting between devices, formation of an interlayer film for forming an interlayer film for insulating the wiring Process, lithography etching process to finely process each deposited film into a desired pattern, lithography
An ashing step for removing residual organic substances such as a photosensitive organic resist used in forming a pattern in the etching step, and a cleaning step for cleaning and removing a natural oxide film and contaminants on the silicon substrate surface.

[0003] Of these manufacturing steps, the processing in the ashing step and the like is generally performed by a batch processing for simultaneously processing a plurality of semiconductor substrates. Suscepto
This is done on a table called r).

FIG. 9 is an external view illustrating the configuration of such a susceptor 100 in a conventional configuration. here,
(A) illustrates a plan view of the susceptor 100, (b) illustrates a front view of the susceptor 100, and (c) illustrates a right side view of the susceptor 100.

[0005] As illustrated in FIG.
Has, for example, a pedestal 101 on which a quartz dish on which a semiconductor substrate described below is placed, and legs 102a to 102d supporting the pedestal 101.

FIGS. 10A and 10B are views illustrating the configuration of a quartz dish 120 on which a semiconductor substrate is mounted. Here, (a) is a plan view of the quartz dish 120, and (b) is
FIG. 2A illustrates an EE cross-sectional view in FIG.

The quartz dish 120 is made of, for example, quartz, and as illustrated in FIGS. 10 (a) and 10 (b),
A substrate placement part 12 for placing a semiconductor substrate on the upper surface thereof.
0a.

FIG. 10C shows the semiconductor substrates 130-1.
FIG. 3 is a plan view illustrating a state in which quartz plates 120 to 122 on which 32 are placed are arranged on a pedestal 101 of a susceptor 100.
As illustrated in FIG.
132 are arranged on the substrate disposing portions 120a to 122a of the quartz dishes 120 to 122, respectively, and further, the quartz dishes 120 to 1 on which the semiconductor substrates 130 to 132 are arranged as described above.
22 are arranged on the upper part of the base 101. The semiconductor substrates 130 to 13 thus arranged on the susceptor 100
2 is accommodated in a processing apparatus such as an ashing apparatus together with the susceptor 100, and various processing such as ashing processing is performed on the semiconductor substrates 130 to 132.

[0009]

However, in the conventional susceptor 100, the quartz plates 120 to 122 on which the semiconductor substrates 130 to 132 are arranged are fixed on the pedestal 101 without being fixed. Therefore, for example, when storing the susceptor 100 in the processing apparatus,
To 122 slide down from the pedestal 101, and the quartz plate 120
There is a problem that the semiconductor substrates 130 to 132 disposed on the susceptor 100 may fall from the susceptor 100 together with the quartz dishes 120 to 122.

Further, in the conventional susceptor 100, since the quartz plates 120 to 122 are used for disposing the semiconductor substrates 130 to 132, it is not possible to save the space of the pedestal portion 101 when disposing the semiconductor substrates. Therefore, it is difficult to arrange the semiconductor substrates on the susceptor 100 at high density, and there is a problem that it is difficult to increase the number of batch processed semiconductor substrates and improve the processing efficiency.

The present invention has been made in view of such a point, and an object of the present invention is to provide a susceptor capable of preventing a semiconductor substrate from dropping during storage in a processing apparatus or the like.

It is another object of the present invention to provide a susceptor capable of increasing the number of semiconductor substrates processed in batches and improving the processing efficiency.

[0013]

According to the present invention, there is provided a susceptor for holding a semiconductor substrate at the time of manufacturing a semiconductor device, the semiconductor substrate receiving groove being the semiconductor substrate type groove formed on the upper surface. And a notch provided in a part of the semiconductor substrate accommodating groove.

Here, the semiconductor substrate accommodating groove holds the semiconductor substrate so as not to drop from the susceptor, and the cutout facilitates taking out of the semiconductor substrate held in the semiconductor substrate accommodating groove.

Further, the susceptor of the present invention preferably comprises
It is composed of quartz. Further, the susceptor of the present invention,
Preferably, it has six or more semiconductor substrate accommodation grooves.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 5 are configuration diagrams illustrating the configuration of the susceptor 10 in the present embodiment. Here, FIG. 1 is a plan view of the susceptor 10, FIG.
4A is a rear view, FIG. 4A is a right side view, and FIG.
Respectively illustrates the left side view. FIG. 5A illustrates an AA cross-sectional view of FIG. 1, and FIG. 5B illustrates a BB cross-sectional view of FIG. 1.

As shown in FIGS. 1 to 4, the susceptor 10 includes, for example, a pedestal 11 for holding a semiconductor substrate, legs 12 a to 12 d for supporting the pedestal 11, and a leg 12.
It has reinforcing pillars 13a to 13d for reinforcing a to 12d.

As a material constituting the susceptor 10, any material having high thermal conductivity and easy to process, such as quartz or carbon, can be used without any particular limitation. Quartz is more desirable from the viewpoint of low gas adsorption during processing.

As exemplified in FIG. 1 and the like, the base 11
For example, semiconductor substrate storage grooves 11a to 11f, which are semiconductor substrate type grooves formed on the upper surface, and semiconductor substrate storage grooves 1
Notches 11aa to 11a to provided in a part of 1a to 11f
11fa.

As described above, the semiconductor substrate storage grooves 11a to 11a
11 f is, for example, a groove formed in the shape of the semiconductor substrate, and a plurality of grooves are formed on the upper surface of the pedestal portion 11. Specifically, the semiconductor substrate storage grooves 11a to 11f are, for example, a plurality of substantially cylindrical grooves formed on the upper surface of the pedestal portion 11,
In the case of the example of FIG. 1, six semiconductor substrate storage grooves 11 a to 11
f is formed on the upper surface of the base 11. In FIG. 1,
Six semiconductor substrate storage grooves 11 a to 11 are provided on the upper surface of pedestal 11.
Although the configuration in which 1f is provided is illustrated, 6
It is good also as providing more than one semiconductor substrate accommodation groove,
Further, a configuration in which six or less (including only one) semiconductor substrate housing grooves are provided may be employed. Further, in the example of FIG. 1, the configuration in which the semiconductor substrate storage grooves 11a to 11f are arranged in two rows is illustrated, but the semiconductor substrate storage grooves 11a to 11f may be configured in another arrangement. As an example of such an arrangement, for example, in order to effectively use the space on the pedestal portion 11, the rows of the semiconductor substrate storage grooves 11a to 11c and the rows of the semiconductor substrate storage grooves 11d to 11f are arranged to be mutually shifted. Configuration. Further, in the example of FIG. 1, a plurality of semiconductor substrate storage grooves 11a to 11f having the same shape are configured, but a configuration having one or more semiconductor substrate storage grooves different in shape from other semiconductor substrate storage grooves may be employed. Good. This makes it possible to simultaneously process semiconductor substrates having different shapes.

It is desirable that the inner diameters of the semiconductor substrate storage grooves 11a to 11f are formed slightly larger than the outer diameter of the semiconductor substrate held in the semiconductor substrate storage grooves 11a to 11f. This is because if the inner diameters of the semiconductor substrate storage grooves 11a to 11f are too small, the semiconductor substrate storage grooves 11a to 11f
If the work efficiency at the time of mounting the semiconductor substrate on the semiconductor substrate is deteriorated, and the inner diameter of the semiconductor substrate storage grooves 11a to 11f is too large, the position of the semiconductor substrate mounted in the semiconductor substrate storage grooves 11a to 11f is not stable, and This is because the possibility that the semiconductor substrate jumps out of the semiconductor substrate storage grooves 11a to 11f during the operation is increased. The specific inner diameter of the semiconductor substrate storage grooves 11a to 11f varies depending on the outer diameter of the semiconductor substrate held therein. For example, the semiconductor substrate storage grooves 11a to 11f have a diameter of 3 inches (about 7.6 cm). In the case where the semiconductor substrate is held in a degree, the inner diameter r of the semiconductor substrate storage grooves 11a to 11f is preferably, for example, about 7.8 cm. Also,
The depth of the semiconductor substrate storage grooves 11a to 11f is desirably set to a depth such that the semiconductor substrate stored in the semiconductor substrate storage grooves 11a to 11f does not protrude to the outside.
In order to hold the semiconductor substrate more reliably, it is desirable that the semiconductor substrate be configured to be deeper than the thickness of the semiconductor substrate. Specific depth dimensions of the semiconductor substrate storage grooves 11a to 11f vary depending on the dimensions of the semiconductor substrate held therein. For example, the semiconductor substrate storage grooves 11a to 11f have a diameter of 3 inches (about 7.6 cm). When the semiconductor substrate having a thickness of about 150 μm is held, the semiconductor substrate storage grooves 11 a to 11
It is desirable that the depth dimension H1 of 11f is set to, for example, 150 μm or more.

The notches 11aa to 11fa are deeper grooves provided at a part of the semiconductor substrate storage grooves 11a to 11f, for example, at the edge portions of the semiconductor substrate storage grooves 11a to 11f. It is a portion for inserting a tool such as tweezers when taking out the semiconductor substrate mounted on the substrates 11f to 11f. In the case of the example of FIG. 1, the cut portions 11 aa to 11 fa are provided at the semiconductor substrate housing grooves 11 a to 11 f to be arranged at the edge portion of the pedestal portion 11.
Are formed one at a time at the edge portion. Further, as illustrated in FIGS. 1 to 3 and FIG.
~ 11fa is desirably formed in, for example, a substantially rectangular parallelepiped shape. Further, it is desirable that the dimensions of the cuts 11aa to 11fa are formed to be large enough to insert a tool such as tweezers. Notches 11aa-11
This is because fa is a portion into which a tool such as tweezers is inserted when the semiconductor substrate is taken out. As specific dimensions, for example, the depth dimension L from the edge portion of the pedestal portion 11 is about 5 to 30 mm, and the semiconductor substrate accommodation groove 11 a
The horizontal width W in the tangential direction of the outer circumference of １１11f is 3 to 10 mm.
It is desirable to configure the depth dimension H2 from the bottom surface of the semiconductor substrate housing grooves 11a to 11f to about 1 to 10 mm.

As illustrated in FIGS. 2 to 4, the leg 12a
Reference numerals 12d to 12d denote column members formed in a shape of, for example, a cylinder, a prism, or the like, and are firmly fixed to a lower portion of the pedestal portion 11.
The reinforcing pillars 13a to 13d are pillar members formed in a shape of, for example, a cylinder, a prism, or the like. Reinforcement pillars 13a-
For example, 13d has both ends fixed to the side surfaces of the legs 12a to 12d, thereby reinforcing the fixing of the legs 12a to 12d to the pedestal 11.

FIG. 6 is a plan view illustrating a state in which a semiconductor substrate is held by the susceptor 10 in the present embodiment, and FIG. 7 is a cross-sectional view taken along the line CC in FIG. In the example of FIG. 6, six semiconductor substrates 21 to 26 are mounted one by one in the six semiconductor substrate storage grooves 11a to 11f. Here, as described above, the inner diameters of the semiconductor substrate storage grooves 11a to 11f are formed slightly larger than the outer diameters of the semiconductor substrates 21 to 26, and the depths of the semiconductor substrate storage grooves 11a to 11f are set to the semiconductor substrate storage grooves 11a. 11f is formed such that the semiconductor substrates 21 to 26 accommodated in the susceptor 10 are not protruded to the outside so that the semiconductor substrates 21 to 26 can be attached to the susceptor 10 when the susceptor 10 described later is accommodated in a processing apparatus.
Can be prevented from falling.

As illustrated in FIG. 7, the semiconductor substrate 23,
26 are housed in, for example, the semiconductor substrate housing grooves 11c and 11f.
Edge portions 23a and 26a arranged on the upper part of 11fa
Are arranged at a predetermined space from the bottom surfaces of the cut portions 11ca and 11fa. This allows one end of tweezers or the like to be inserted into this space, and one end of tweezers or the like sandwiched in this space and another end of tweezers or the like to be disposed above the semiconductor substrates 23 and 26. By sandwiching the semiconductor substrates 23 and 26 between the semiconductor substrates 23 and 26, the semiconductor substrates 23 and 26 housed in the semiconductor substrate housing grooves 11c and 11f can be easily taken out. This is because other semiconductor substrate storage grooves 11
Semiconductor substrate 2 housed in a, 11b, 11d, 11e
The same applies to 1, 22, 24, and 25.

FIG. 8 is a conceptual diagram illustrating a state in which the susceptor 10 holding the semiconductor substrate is accommodated in the ashing device 30 as described above. The ashing device 30 is, for example, a device that performs an ashing process for removing a residual organic substance such as a photosensitive organic resist used in the pattern formation in the lithography / etching process from the semiconductor substrate. A quartz chamber 31 to be housed, a tray 32 on which a susceptor 10 holding a semiconductor substrate is arranged, and a quartz chamber 3
Front door 33 for shutting off the airtightness between 1 and the outside
have.

In the ashing process, for example, first, the susceptor 10 holding the semiconductor substrate is placed on the tray 32. Then, the tray 32 and the apparatus front door 33 are moved in the direction D shown in FIG. 8, and the susceptor 10 holding the semiconductor substrate is held in a state where the apparatus front door 33 keeps airtight with the outside in the quartz chamber 31. It is arranged in the quartz chamber 31. Next, for example, the inside of the quartz chamber 31 is evacuated to a predetermined degree of vacuum.
Inject oxygen into 1. Oxygen injected into the quartz chamber 31 is plasma-decomposed by, for example, discharge using an electrode (not shown), and active oxygen atoms and ozone generated thereby remove residual organic substances on the semiconductor substrate.

As described above, in the present embodiment, the semiconductor substrate accommodating grooves 11a to 11f, which are semiconductor substrate-shaped grooves, are
Since the semiconductor substrate is formed on the upper surface of the semiconductor device, the semiconductor substrate is held by the semiconductor substrate storage grooves 11a to 11f, so that the semiconductor substrate can be prevented from dropping when it is stored in a processing apparatus.

In the present embodiment, the semiconductor substrate is directly held by the semiconductor substrate storage grooves 11a to 11f, which are grooves of a semiconductor substrate type, and a quartz plate or the like is not used for holding the semiconductor substrate. It is possible to arrange semiconductor substrates at a high density, to increase the number of batch processed semiconductor substrates, and to improve the processing efficiency.

The present invention is not limited to the above embodiment. For example, in this embodiment, the susceptor that holds the semiconductor substrate during the ashing process has been mainly described, but the present invention may be applied to a susceptor used in other manufacturing processes such as an oxide film / nitride film deposition process. .

[0031]

As described above, in the present invention, the semiconductor substrate accommodating groove, which is a groove of a semiconductor substrate type, is formed on the upper surface of the susceptor, so that the semiconductor substrate is held by the semiconductor substrate accommodating groove. It is possible to prevent the semiconductor substrate from dropping when it is stored in the processing apparatus.

Further, the semiconductor substrate is directly held by the semiconductor substrate receiving groove, which is a groove of a semiconductor substrate type, and a quartz plate or the like is not used for holding the semiconductor substrate.
The semiconductor substrates can be arranged at a high density on the susceptor, so that the number of batch processed semiconductor substrates can be increased and the processing efficiency can be improved.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a plan view of a susceptor according to an embodiment.

FIG. 2 is a diagram exemplifying a front view of a susceptor in the present embodiment.

FIG. 3 is a diagram exemplifying a rear view of a susceptor in the embodiment.

4A is a diagram illustrating a right side view of a susceptor in the present embodiment, and FIG. 4B is a diagram illustrating a left side view thereof.

5A is a cross-sectional view taken along the line AA in FIG. 1, and FIG.
It is the figure which illustrated the BB sectional view of FIG. 1 each.

FIG. 6 is a plan view illustrating a state where a semiconductor substrate is held by a susceptor according to the present embodiment;

FIG. 7 is a sectional view taken along the line CC in FIG. 6;

FIG. 8 is a conceptual diagram illustrating a state in which a susceptor holding a semiconductor substrate is housed in an ashing device.

9A illustrates a plan view of a susceptor in a conventional configuration, FIG. 9B illustrates a front view thereof, and FIG. 9C illustrates a right side view thereof.

10A is a plan view of a quartz dish, and FIG.
FIG. 2A illustrates an EE cross-sectional view in FIG.
(C) is a plan view illustrating a state in which a quartz dish on which a semiconductor substrate is placed is arranged on a pedestal portion of a susceptor.

[Explanation of symbols]

10, 100: susceptor, 11: pedestal, 11a to 11
f ... Semiconductor substrate accommodation groove, 11aa-11fa ... Cut, 21-26, 130-132 ... Semiconductor substrate, 30 ...
Ashing device, 31 ... quartz chamber, 32 ... tray,
33 ... front door

Claims (3)

[Claims] 1. A susceptor for holding a semiconductor substrate at the time of manufacturing a semiconductor device, comprising: a semiconductor substrate storage groove formed on an upper surface, the semiconductor substrate storage groove; and a notch provided in a part of the semiconductor substrate storage groove. A susceptor, comprising: a part; 2. The susceptor according to claim 1, wherein the susceptor is made of quartz. 3. The susceptor according to claim 1, wherein the susceptor has six or more grooves for accommodating the semiconductor substrate.