JP2002214615A - Liquid crystal display element and method of manufacturing liquid crystal display element - Google Patents

Liquid crystal display element and method of manufacturing liquid crystal display element

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Publication number
JP2002214615A
JP2002214615A JP2001010322A JP2001010322A JP2002214615A JP 2002214615 A JP2002214615 A JP 2002214615A JP 2001010322 A JP2001010322 A JP 2001010322A JP 2001010322 A JP2001010322 A JP 2001010322A JP 2002214615 A JP2002214615 A JP 2002214615A
Authority
JP
Japan
Prior art keywords
alignment film
liquid crystal
tilt
vertical alignment
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001010322A
Other languages
Japanese (ja)
Inventor
Takeshi Yamamoto
武志 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001010322A priority Critical patent/JP2002214615A/en
Publication of JP2002214615A publication Critical patent/JP2002214615A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To improve the display grade by preventing generation of an internal offset voltage in driving and the occurrence of a display defect by turning and a display failure by varying of electrical characteristics between a vertical alignment layer and a tilt alignment layer of a liquid crystal display element of a hybrid aligned nematic type display mode. SOLUTION: Polyimide of the same kind which indicates a horizontal alignment characteristic is deposited as the raw material films of the vertical alignment layer 20 and tilt alignment layer 24 of the liquid crystal display element 10 and thereafter, the vertical alignment layer 20 is irradiated with UV rays 26 in the perpendicular direction in such a manner that the total integrated quantity of energy attains 3J. The tilt alignment layer 24 is irradiated with UV rays 27 from a diagonal direction in such a manner that the total integrated quantity of energy attains 3J which is the same as that of the UV rays 26. As a result, the vertical alignment layer 20 and the tile alignment layer are made nearly the same in their dielectric constant and specific resistance.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示素子及び
液晶表示素子の製造方法に係り、特にハイブリッド・ア
ラインド・ネマティック型表示モードの液晶表示素子に
て高い表示品位を得る液晶表示素子及び液晶表示素子の
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device and a method of manufacturing a liquid crystal display device, and more particularly to a liquid crystal display device and a liquid crystal display which can obtain high display quality in a liquid crystal display device of a hybrid aligned nematic type display mode. The present invention relates to a device manufacturing method.

【0002】[0002]

【従来の技術】近年、画像表示用や光スイッチなどに利
用される液晶表示素子は、薄型、軽量を特長として携帯
用デバイスに幅広く普及されている。この携帯用デバイ
スに使用される液晶表示素子としては、従来よりツイス
テッド・ネマティック型(以下TN型と略称する。)表
示モードの液晶表示素子が多用されている。そしてこの
TN型表示モードの液晶表示素子を用いた場合、例えば
バックライト付きの10インチサイズの携帯デバイスで
あると一般に約2.5Wの消費電力を要していた。
2. Description of the Related Art In recent years, liquid crystal display elements used for image display and optical switches have been widely used in portable devices because of their features of being thin and lightweight. As a liquid crystal display element used in this portable device, a liquid crystal display element of a twisted nematic type (hereinafter abbreviated as TN type) display mode has been frequently used. When a liquid crystal display element of this TN type display mode is used, for example, a portable device with a backlight and a size of 10 inches generally requires about 2.5 W of power consumption.

【0003】他方、携帯用デバイスにあっては、低消費
電力化が進められ、液晶表示素子においても低消費電力
化が強く求められている。この液晶表示素子の低消費電
力化技術のひとつとして、図7に示すように、一方の電
極基板1側に垂直配向膜2を成膜する一方、対向する電
極基板3側にチルト配向膜4を成膜して、液晶層6中の
液晶分子7のプレチルト角を徐々に変化させる分子配列
を利用して画像表示を行う、ハイブリッド・アラインド
・ネマティック型(以下HAN型と略称する。)表示モ
ードの液晶表示素子8の実用化が進められている。この
HAN型表示モードは、電圧印加特性においてTN型表
示モードのようなしきい値がないため、液晶の低電圧駆
動に効果的であるという特性を有する。
On the other hand, the power consumption of portable devices has been reduced, and the power consumption of liquid crystal display devices has also been strongly demanded. As one of the techniques for reducing the power consumption of this liquid crystal display element, as shown in FIG. 7, a vertical alignment film 2 is formed on one electrode substrate 1 while a tilt alignment film 4 is formed on an opposite electrode substrate 3. A hybrid aligned nematic type (hereinafter abbreviated as HAN type) display mode in which a film is formed and an image is displayed using a molecular arrangement in which the pretilt angle of the liquid crystal molecules 7 in the liquid crystal layer 6 is gradually changed. The practical use of the liquid crystal display element 8 is being promoted. The HAN type display mode has a characteristic that it is effective for driving a liquid crystal at a low voltage because there is no threshold in the voltage application characteristic as in the TN type display mode.

【0004】そしてこのようなHAN型表示モードの液
晶表示素子8にあっては、従来、垂直配向膜2として
は、ラビング処理を要すること無く、塗布するのみで垂
直配向機能を有する様な配向膜の原材料膜を用いて成膜
していた。これに対して、チルト配向膜4としては、元
々水平配向機能を示し、塗布後にラビング処理を施すこ
とにより容易にチルト配向機能を有する様な配向膜の原
材料膜を用いて成膜していた。
In such a HAN type display mode liquid crystal display element 8, conventionally, as the vertical alignment film 2, an alignment film having a vertical alignment function only by coating without a rubbing treatment is required. Was formed using the above-mentioned raw material film. On the other hand, as the tilt alignment film 4, a raw material film of an alignment film which originally has a horizontal alignment function and which easily has a tilt alignment function by performing a rubbing treatment after coating has been used.

【0005】[0005]

【発明が解決しようとする課題】しかしながら上記従来
のHAN型表示モードの液晶表示素子にあっては、それ
ぞれ特性の異なる配向膜の原材料膜を用いて垂直配向膜
とチルト配向膜を成膜する事から、垂直配向膜とチルト
配向膜の電気的特性が全く異なり。例えば、垂直配向膜
にあっては1kHzでの誘電率3.3〜4.0、比抵抗
5×1015Ωcm、チルト配向膜にあっては1kHzで
の誘電率3.0〜3.2、比抵抗1×10 16Ωcmと、
異なっていた。
SUMMARY OF THE INVENTION
HAN type display mode liquid crystal display element
Vertical alignment film using raw material film of alignment film with different characteristics
The vertical alignment film and the tilt
The electrical characteristics of the alignment film are completely different. For example, vertical alignment film
Has a dielectric constant of 3.3 to 4.0 at 1 kHz and a specific resistance.
5 × 10FifteenΩcm, 1 kHz for tilt alignment film
Dielectric constant of 3.0 to 3.2, specific resistance of 1 × 10 16Ωcm,
Was different.

【0006】このため、従来のHAN型表示モードの液
晶表示素子は、液晶層への交流電圧印加時に、垂直配向
膜の蓄積容量とチルト配向膜の蓄積容量との差から内部
オフセット電圧を生じ、この内部オフセット電圧による
直流成分が液晶層に重畳され、電位過剰による焼き付き
あるいは電位不足による表示不能等の、表示不良を起こ
すという問題があった。
For this reason, the conventional HAN type liquid crystal display device generates an internal offset voltage due to the difference between the storage capacitance of the vertical alignment film and the storage capacitance of the tilt alignment film when an AC voltage is applied to the liquid crystal layer. The DC component due to the internal offset voltage is superimposed on the liquid crystal layer, and there is a problem in that display defects such as burn-in due to excessive potential or display failure due to insufficient potential are caused.

【0007】そこで本発明は上記課題を除去するもので
あり、液晶表示素子の低消費電力化の実現を図るHAN
型表示モードの液晶表示素子において、液晶層に重畳さ
れる内部オフセット電圧を生じることが無く、焼き付き
や表示不能を原因とする表示不良を生じること無く、良
好な表示品位を得られ、高い信頼性を有する液晶表示素
子及び液晶表示素子の製造方法を提供することを目的と
する。
Therefore, the present invention has been made to solve the above problems, and has been developed to realize a HAN which realizes low power consumption of a liquid crystal display device.
In the liquid crystal display device of the type display mode, an internal offset voltage superimposed on the liquid crystal layer is not generated, and a display quality is obtained without a display defect caused by image sticking or display failure, and high reliability is obtained. It is an object of the present invention to provide a liquid crystal display device having the above and a method for manufacturing the liquid crystal display device.

【0008】[0008]

【課題を解決するための手段】本発明は、少なくともい
ずれか一方に電極を有してなり、対向配置される一対の
基板と、この一対の基板のいずれか一方に成膜され略垂
直配向機能を有する垂直配向膜と、この垂直配向膜が形
成される前記一方の基板に対向する他方の基板に成膜さ
れ、チルト配向機能を有し前記垂直配向膜の電気的特性
とほぼ同等の電気的特性を示すチルト配向膜と、前記垂
直配向膜及び前記チルト配向膜とを対向するよう対向配
置してなる前記一対の基板の間隙に封入される液晶組成
物とを設けるものである。
According to the present invention, there is provided a pair of substrates which have electrodes on at least one of them and which are disposed opposite to each other, and which have a substantially vertical alignment function formed on one of the pair of substrates. And a vertical alignment film having a tilt alignment function and being formed on the other substrate opposite to the one substrate on which the vertical alignment film is formed, and having substantially the same electrical characteristics as those of the vertical alignment film. A tilt alignment film exhibiting characteristics, and a liquid crystal composition sealed in a gap between the pair of substrates, which are arranged so that the vertical alignment film and the tilt alignment film face each other, are provided.

【0009】又本発明は、少なくともいずれか一方に電
極を有する第1及び第2の基板の、前記第1の基板に略
垂直配向機能を有する垂直配向膜を成膜し、前記第2の
基板にチルト配向機能を有し前記垂直配向膜の電気的特
性とほぼ同等の電気的特性を示すチルト配向膜を形成
後、前記垂直配向膜及び前記チルト配向膜とを対向する
よう対向配置してなる前記第1の基板及び前記第2の基
板の間隙に液晶組成物を封入してなる液晶表示素子の製
造方法において、前記第1の基板及び前記第2の基板に
同一種類の配向膜の原材料膜を成膜する工程と、前記第
1の基板に成膜される前記原材料膜に対して略垂直方向
に垂直配向エネルギーを照射して、略垂直配向機能を付
与する垂直配向処理工程と、前記第2の基板に成膜され
る前記原材料膜に対して斜め方向に、前記垂直配向エネ
ルギーの総エネルギー量と略等しい総エネルギー量のチ
ルト配向エネルギーを照射して、チルト配向機能を付与
するチルト配向処理工程と、を実施するものである。
Further, according to the present invention, a vertical alignment film having a substantially vertical alignment function is formed on the first substrate of the first and second substrates having electrodes on at least one of the first and second substrates. After forming a tilt alignment film having a tilt alignment function and exhibiting substantially the same electrical characteristics as the electrical characteristics of the vertical alignment film, the vertical alignment film and the tilt alignment film are disposed so as to face each other. In a method for manufacturing a liquid crystal display element in which a liquid crystal composition is sealed in a gap between the first substrate and the second substrate, a raw material film of an alignment film of the same type is formed on the first substrate and the second substrate Forming a film, and irradiating the raw material film formed on the first substrate with a vertical alignment energy in a substantially vertical direction to impart a substantially vertical alignment function; Of the raw material film formed on the second substrate Te in an oblique direction, is irradiated with a tilted alignment energy of total energy approximately equal to the total energy of the vertical alignment energy, it is to implement a tilted alignment process step of imparting a tilt alignment function, a.

【0010】上記構成により本発明は、HAN型表示モ
ードの液晶表示素子の、垂直配向膜とチルト配向膜の電
気的特性をほぼ同じにして、差垂直配向膜の蓄積容量と
チルト配向膜の蓄積容量の差を解消することにより、液
晶層への内部オフセット電圧の重畳を原因とする焼き付
き等の表示不良を生じること無く、表示品位の良い、信
頼性の高い液晶表示素子を得るものである。
According to the present invention, the present invention provides a liquid crystal display device in a HAN type display mode, in which the vertical alignment film and the tilt alignment film have substantially the same electrical characteristics, and the storage capacity of the vertical alignment film and the storage of the tilt alignment film. By eliminating the difference in capacitance, it is possible to obtain a highly reliable liquid crystal display device with good display quality without causing display defects such as burn-in due to superposition of an internal offset voltage on the liquid crystal layer.

【0011】[0011]

【発明の実施の形態】次に本発明を、図1乃至図3に示
す第1の実施の形態を参照して説明する。本実施の形態
は、HAN型表示モードの液晶表示素子にて、基板対向
時に対向配置する垂直配向膜とチルト配向膜の電気的特
性を揃えるために、元々水平配向機能を示す配向膜材料
を、垂直配向膜及びチルト配向膜の両方の原材料膜とし
て用い、垂直配向膜にあっては、配向膜の原材料膜中
の、垂直方向の高分子のみを残し、それ以外の方向の高
分子を分解することにより、垂直配向特性を得るように
するものである。又、チルト配向膜にあっては、配向膜
の原材料膜中の、プレチルト角を生じさせる斜め方向の
高分子のみを残し、それ以外の方向の高分子を分解する
ことにより、取ると配向特性を得るようにするものであ
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be described with reference to a first embodiment shown in FIGS. In the present embodiment, in the liquid crystal display element of the HAN type display mode, in order to equalize the electrical characteristics of the vertical alignment film and the tilt alignment film that are opposed to each other when the substrate is opposed, an alignment film material that originally has a horizontal alignment function is used. Used as a raw material film for both the vertical alignment film and the tilt alignment film. In the vertical alignment film, only the polymer in the vertical direction is left in the raw material film of the alignment film, and the polymer in the other direction is decomposed. Thereby, vertical alignment characteristics are obtained. In addition, in the tilt alignment film, in the raw material film of the alignment film, only the polymer in the oblique direction that causes the pretilt angle is left, and the polymer in the other direction is decomposed to take the alignment characteristics. Is what you get.

【0012】図1は、TFT基板11及び対向基板12
をスペーサ15を介し対向配置し、シール剤13にて周
囲を接着して成る間隙に液晶分子14aからなる液晶組
成物14を封入し、更にTFT基板11に偏光板11a
を貼り付け、対向基板12に位相差板付き偏光板12a
を貼り付けてなる、HAN型表示モードの液晶表示素子
10を示す概略断面図である。
FIG. 1 shows a TFT substrate 11 and a counter substrate 12.
Are opposed to each other with a spacer 15 interposed therebetween, a liquid crystal composition 14 composed of liquid crystal molecules 14 a is sealed in a gap formed by bonding the periphery with a sealant 13, and a polarizing plate 11 a
And a polarizing plate 12 a with a retardation plate
FIG. 1 is a schematic cross-sectional view showing a liquid crystal display element 10 in a HAN type display mode, in which is attached.

【0013】TFT基板11は、ガラス基板16上に液
晶駆動用の薄膜トランジスタ(以下TFTと略称す
る。)素子17と、インジウム錫酸化物(以下ITOと
略称する。)からなりマトリクス状にパターン形成され
る画素電極18を有し、更にこれらTFT素子17と画
素電極18の上にJSR(株)製ポリイミド:AL−3
046を原材料膜とする垂直配向膜20を有している。
対向基板12は、ガラス基板21上にR(赤)、G
(緑)、B(青)のカラーフィルタ層22とITOから
なるコモン電極23を有し、更にコモン電極23上にJ
SR(株)製ポリイミド:AL−3046を原材料膜と
し、プレチルト角7.5°であり、垂直配向膜20と、
誘電率及び比抵抗がほぼ同じチルト配向膜24を有して
いる。25は、液晶表示素子10の表示領域周縁を覆う
額縁遮光層である。
The TFT substrate 11 is composed of a thin film transistor (hereinafter abbreviated as TFT) element 17 for driving liquid crystal and an indium tin oxide (hereinafter abbreviated as ITO) pattern formed on a glass substrate 16 in a matrix. A pixel electrode 18 and a polyimide: AL-3 manufactured by JSR Corporation on the TFT element 17 and the pixel electrode 18.
046 as a raw material film.
The opposing substrate 12 has R (red), G
(Green) and B (blue) color filter layers 22 and a common electrode 23 made of ITO.
SR: polyimide: AL-3046 as a raw material film, a pretilt angle of 7.5 °, a vertical alignment film 20,
It has a tilt alignment film 24 having substantially the same dielectric constant and specific resistance. Reference numeral 25 denotes a frame light-shielding layer that covers the periphery of the display area of the liquid crystal display element 10.

【0014】次に液晶表示素子10の製造方法について
述べる。垂直配向膜20を有するTFT基板11は、通
常のフォトリソグラフィ工程を繰り返してガラス基板1
6上にTFT素子17及び画素電極18を形成する。こ
のTFT素子17及び画素電極18上に配向膜の原材料
であり、塗布時には水平配向機能を示すJSR(株)製
ポリイミド:AL−3046を滴下し、スピンコートに
より原材料膜30を成膜する。
Next, a method for manufacturing the liquid crystal display element 10 will be described. The TFT substrate 11 having the vertical alignment film 20 is formed by repeating the usual photolithography process.
On TFT 6, a TFT element 17 and a pixel electrode 18 are formed. On the TFT element 17 and the pixel electrode 18, a polyimide: AL-3046 manufactured by JSR Co., Ltd., which is a raw material for an alignment film and exhibits a horizontal alignment function, is dropped at the time of coating, and the raw material film 30 is formed by spin coating.

【0015】更に原材料膜30に垂直配向機能を持たせ
るために、図2に示すように、原材料膜30に垂直方向
である矢印s方向から非偏光であってピーク波長365
nmの紫外線26を積算量3Jとなるよう、例えば30
0mWで10sec照射する。この非偏光の矢印s方向
の紫外線26は進行方向に向かって垂直な電場ベクトル
tを持っていることから、原材料膜30は、電場ベクト
ルtと平行なポリイミド分子30aが高分子分解反応を
起こして、電場ベクトルtと垂直なポリイミド分子30
bが高分子分解されずに残される。
As shown in FIG. 2, in order to make the raw material film 30 have a vertical alignment function, as shown in FIG.
30 nm, for example, 30 nm so that the integrated amount becomes 3 J.
Irradiate at 0 mW for 10 sec. Since the non-polarized ultraviolet rays 26 in the direction of the arrow s have an electric field vector t perpendicular to the traveling direction, the raw material film 30 causes the polyimide molecules 30a parallel to the electric field vector t to undergo a polymer decomposition reaction. , A polyimide molecule 30 perpendicular to the electric field vector t
b is left without polymer decomposition.

【0016】すなわち、垂直方向からの紫外線26の照
射により、原材料膜30に垂直配向機能を付与する配向
処理を実施し、TFT基板11上に垂直配向膜20を成
膜する。この垂直配向膜30の電気的特性を測定したと
ころ1kHzでの誘電率は3.5、比抵抗は4.5×1
15Ωcmであった。
That is, an alignment process for imparting a vertical alignment function to the raw material film 30 is performed by irradiating ultraviolet rays 26 from the vertical direction, and a vertical alignment film 20 is formed on the TFT substrate 11. When the electrical characteristics of the vertical alignment film 30 were measured, the dielectric constant at 1 kHz was 3.5 and the specific resistance was 4.5 × 1.
0 15 Ωcm.

【0017】一方、チルト配向膜24を有する対向基板
12は、ガラス基板21上にフォトリソグラフィ工程を
繰り返してR(赤)、G(緑)、B(青)のカラーフィ
ルタ層22及びコモン電極23を形成する。このコモン
電極23上に垂直配向膜20の原材料膜と同一種類であ
り、塗布時に水平配向機能を示すJSR(株)製ポリイ
ミド:AL−3046を配向膜の原材料膜として滴下
し、スピンコートにより原材料膜31を成膜する。
On the other hand, the opposing substrate 12 having the tilt alignment film 24 is formed on the glass substrate 21 by repeating the photolithography process to form the R (red), G (green), and B (blue) color filter layers 22 and the common electrode 23. To form On the common electrode 23, JSR Corporation polyimide: AL-3046, which is of the same type as the raw material film of the vertical alignment film 20 and has a horizontal alignment function at the time of coating, is dropped as a raw material film of the alignment film, and the raw material is formed by spin coating. The film 31 is formed.

【0018】更に原材料膜31にチルト配向機能を持た
せるために、図3に示すように、原材料膜31に向かっ
て入射角θを80°として、非偏光であってピーク波長
365nmの矢印v方向の紫外線27を照射する。この
紫外線27は、入射角θの斜方照射により原材料膜31
に対する紫外線照度が、垂直配向膜20の配向処理時に
比し小さくなる分を考慮して、総積算量が、垂直配向膜
20の配向処理時と同じ3Jとなるよう、例えば300
mWで10/cosθsec照射する。
Further, in order to make the raw material film 31 have a tilt alignment function, as shown in FIG. 3, the incident angle .theta. UV light 27 is applied. The ultraviolet rays 27 are applied to the raw material film 31 by oblique irradiation at the incident angle θ.
In consideration of the fact that the UV illuminance for the vertical alignment film 20 is smaller than that during the vertical alignment film 20, the total integrated amount is 3J, for example, 300 J
Irradiate 10 / cos θsec at mW.

【0019】この入射角80°の非偏光の紫外線27は
矢印v方向である入射方向に向かって垂直な電場ベクト
ルw(平面上にあってはベクトルw〜w・cosθ)を
持っていることから、原材料膜31は、電場ベクトルw
と平行なポリイミド分子31aが高分子分解反応を起こ
して、電場ベクトルwと垂直なポリイミド分子31b
が、分解されずに残される。
Since the unpolarized ultraviolet ray 27 having an incident angle of 80 ° has an electric field vector w (vector w to w · cos θ on a plane) perpendicular to the incident direction which is the direction of arrow v. , The raw material film 31 has an electric field vector w
Is caused by a polymer decomposition reaction, and the polyimide molecules 31b perpendicular to the electric field vector w
Are left undegraded.

【0020】すなわち、入射角80°の紫外線27の照
射により、原材料膜31にプレチルト角7.5°のチル
ト配向機能を付与する配向処理を実施し、対向基板12
上にチルト配向膜24を成膜する。このチルト配向膜2
4の電気的特性を測定したところ1kHzでの誘電率は
3.5、比抵抗は4.8×1015Ωcmであり、垂直配
向膜20の誘電率及び比抵抗とほぼ同じであった。
That is, by irradiating the raw material film 31 with a tilt alignment function having a pretilt angle of 7.5 ° by irradiation with ultraviolet rays 27 having an incident angle of 80 °, an alignment process is performed.
A tilt alignment film 24 is formed thereon. This tilt alignment film 2
When the electrical characteristics of No. 4 were measured, the dielectric constant at 1 kHz was 3.5 and the specific resistance was 4.8 × 10 15 Ωcm, which were almost the same as the dielectric constant and specific resistance of the vertical alignment film 20.

【0021】そしてチルト配向膜24を配向後、対向基
板12上にシール剤13とトランスファ剤(図示せず)
を塗布する一方、TFT基板11にスペーサ15を散布
した後、TFT基板11及び対向基板12を、垂直配向
膜20及びチルト配向膜24が対向する様貼り合わせ、
シール剤13を加熱硬化して液晶セルを形成する。更に
液晶セルの間隙に液晶組成物14を封入後、TFT基板
11に偏光板11aを貼り付け、対向基板12に位相差
板付き偏光板12aを貼り付けて液晶表示素子を完成す
る。
After the tilt alignment film 24 is aligned, a sealant 13 and a transfer agent (not shown) are formed on the counter substrate 12.
While applying spacers 15 on the TFT substrate 11, the TFT substrate 11 and the counter substrate 12 are bonded together such that the vertical alignment film 20 and the tilt alignment film 24 face each other.
The sealant 13 is cured by heating to form a liquid crystal cell. Further, after the liquid crystal composition 14 is sealed in the gap between the liquid crystal cells, the polarizing plate 11a is attached to the TFT substrate 11, and the polarizing plate 12a with a retardation plate is attached to the counter substrate 12, thereby completing the liquid crystal display device.

【0022】この様にしてなる、HAN型表示モードの
液晶表示素子10に、10mm角の白黒チェッカー画像
を12時間点灯表示し、その後、中間調画像を表示して
表示品位を評価したところ、内部オフセット電圧を原因
とする焼き付きや表示不能による表示不良が見られず、
良好な表示画像を得られた。
When a black and white checker image of 10 mm square is lit for 12 hours on the liquid crystal display element 10 in the HAN type display mode, and a halftone image is displayed to evaluate the display quality. No display failure due to burn-in or display failure due to offset voltage
Good display images were obtained.

【0023】更に、この液晶表示素子10を気温50
℃、湿度80%の条件で1000時間通電試験した後
に、前述の10mm角の白黒チェッカー画像を用いた同
様の焼き付き試験を行った場合も、焼き付きや表示不能
による表示不良が見られず、良好な表示画像を得られ
た。
Further, the liquid crystal display element 10 is set to a temperature of 50
After conducting an electric current test for 1000 hours under conditions of 80 ° C. and 80% humidity, a similar burn-in test using the above-described black and white checker image of 10 mm square was also performed. The display image was obtained.

【0024】この様に構成すれば、HAN型表示モード
の液晶表示素子10にて、対向配置される垂直配向膜2
0とチルト配向膜24の誘電率及び比抵抗の値がほぼ同
じであることから、垂直配向膜20とチルト配向膜24
の蓄積容量の差による内部オフセット電圧が発生され
ず、液晶組成物14は、安定した印加電圧を得られる。
従って液晶表示素子10は、焼き付きや表示不能による
表示不良を生じること無く高い表示品位を得られる。
According to this structure, in the liquid crystal display element 10 in the HAN type display mode, the vertically aligned films 2 opposed to each other are arranged.
0 and the values of the dielectric constant and the specific resistance of the tilt alignment film 24 are substantially the same, so that the vertical alignment film 20 and the tilt alignment film 24
No internal offset voltage is generated due to the difference in the storage capacitance of the liquid crystal composition 14, and the liquid crystal composition 14 can obtain a stable applied voltage.
Therefore, the liquid crystal display element 10 can obtain high display quality without causing display failure due to image sticking or display failure.

【0025】次に本発明を図4に示す第2の実施の形態
を参照して説明する。この第2の実施の形態は、第1の
実施の形態における、垂直配向膜20及びチルト配向膜
24に用いる配向膜の原材料膜が異なるものの、他は第
1の実施の形態と同様であることから同一部分について
は同一符号を付しその説明を省略する。
Next, the present invention will be described with reference to a second embodiment shown in FIG. This second embodiment is the same as the first embodiment except that the raw material film of the alignment film used for the vertical alignment film 20 and the tilt alignment film 24 in the first embodiment is different. Therefore, the same reference numerals are given to the same parts, and the description thereof will be omitted.

【0026】本実施の形態のHAN型表示モードの液晶
表示素子40にあっては、ガラス基板16上のTFT素
子17と画素電極18上に配向膜の原材料膜として塗布
時に水平配向機能を示すJSR(株)製ポリイミド:A
L−1051を成膜後、垂直方向から非偏光であってピ
ーク波長365nmの紫外線26を積算量3Jとなるよ
う、例えば300mWで10sec照射して垂直配向機
能を付与して垂直配向膜33を成膜し、TFT基板34
を形成する一方、ガラス基板21上のコモン電極23上
に垂直配向膜33の原材料膜と同じJSR(株)製ポリ
イミド:AL−1051を成膜後、入射角80°方向か
ら非偏光であってピーク波長365nmの紫外線27を
エネルギーの総積算量が、垂直配向膜33配向処理時と
同様の3Jとなる様照射して、チルト配向機能を付与し
てプレチルト角7.5°のチルト配向膜36を成膜し、
対向基板37を形成する。この時の垂直配向膜33とチ
ルト配向膜36の電気的特性を測定したところ、いずれ
も1kHzでの誘電率は3.8、比抵抗は5.2×10
15Ωcmと、同じであった。
In the liquid crystal display element 40 of the HAN type display mode according to the present embodiment, the JSR exhibiting a horizontal alignment function at the time of application as a raw material film of an alignment film on the TFT element 17 and the pixel electrode 18 on the glass substrate 16. Polyimide manufactured by: A
After forming L-1051, a vertical alignment film 33 is formed by irradiating ultraviolet rays 26 which are unpolarized from the vertical direction and have a peak wavelength of 365 nm to an integrated amount of 3 J, for example, at 300 mW for 10 seconds to impart a vertical alignment function. Film, TFT substrate 34
Is formed on the common electrode 23 on the glass substrate 21 with the same polyimide (AL-1051 manufactured by JSR Corporation) as the raw material film of the vertical alignment film 33. Ultraviolet light 27 having a peak wavelength of 365 nm is irradiated so that the total integrated amount of energy becomes 3 J, which is the same as that in the vertical alignment film 33 alignment treatment, to impart a tilt alignment function to the tilt alignment film 36 having a pretilt angle of 7.5 °. To form a film,
The counter substrate 37 is formed. When the electrical characteristics of the vertical alignment film 33 and the tilt alignment film 36 at this time were measured, the dielectric constant at 1 kHz was 3.8 and the specific resistance was 5.2 × 10
It was the same as 15 Ωcm.

【0027】この後TFT基板34、対向基板37をシ
ール剤13で貼り合わせ、液晶組成物14を封入後、偏
光板34a、位相差板付き偏光板37aを貼り付けて、
HAN型表示モードの液晶表示素子40を完成する。
After that, the TFT substrate 34 and the counter substrate 37 are bonded with the sealant 13, and after the liquid crystal composition 14 is sealed, the polarizing plate 34 a and the polarizing plate 37 a with a retardation plate are bonded.
The liquid crystal display element 40 of the HAN type display mode is completed.

【0028】この様にしてなる、垂直配向膜33及びチ
ルト配向膜36を対向配置して作製した、HAN型表示
モードの液晶表示素子40に第1の実施の形態と同様
に、初期時及び1000時間通電後の焼き付き試験を行
い表示品位を評価したところ、初期時及び1000時間
通電後のいずれにおいても内部オフセット電圧を原因と
する焼き付きや表示不能による表示不良が見られず、良
好な表示画像を得られた。
As in the first embodiment, the liquid crystal display element 40 of the HAN type display mode, which is manufactured by arranging the vertical alignment film 33 and the tilt alignment film 36 to face each other, at the initial time and at 1000 When the image quality was evaluated by performing a burn-in test after energizing for a period of time, there was no display failure due to burn-in or display failure due to the internal offset voltage at both the initial stage and after 1000 hours of energizing. Obtained.

【0029】この様に構成すれば、第1の実施の形態と
同様HAN型表示モードの液晶表示素子40にて対向配
置される垂直配向膜33とチルト配向膜36の誘電率及
び比抵抗の値が同等であり、内部オフセット電圧が発生
されず、液晶表示素子40は、焼き付きや表示不能によ
る表示不良を生じること無く高い表示品位を得られる。
According to this structure, the values of the dielectric constant and the specific resistance of the vertical alignment film 33 and the tilt alignment film 36 that are opposed to each other in the liquid crystal display element 40 in the HAN type display mode as in the first embodiment. And the internal offset voltage is not generated, and the liquid crystal display element 40 can obtain high display quality without causing display failure due to burn-in or display failure.

【0030】次に本発明を図5に示す第3の実施の形態
を参照して説明する。第3の実施の形態は、第1の実施
の形態におけるチルト配向膜24の紫外線27照射によ
る配向処理時に更にラビング処理を施したものであり、
他は第1の実施の形態と同様であることから同一部分に
ついては同一符号を付しその説明を省略する。
Next, the present invention will be described with reference to a third embodiment shown in FIG. In the third embodiment, a rubbing process is further performed at the time of aligning the tilt alignment film 24 with the irradiation of the ultraviolet light 27 in the first embodiment.
Other parts are the same as those of the first embodiment, and therefore the same parts are denoted by the same reference numerals and description thereof will be omitted.

【0031】本実施の形態のHAN型表示モードの液晶
表示素子50にあっては、ガラス基板16上のTFT素
子17と画素電極18上に第1の実施の形態と同一の、
1kHzでの誘電率が3.5、比抵抗が4.5×10
15Ωcmの垂直配向膜20を成膜して、TFT基板11
を得る。
In the liquid crystal display element 50 in the HAN type display mode of the present embodiment, the same TFT element 17 and the pixel electrode 18 on the glass substrate 16 as those of the first embodiment are provided.
The dielectric constant at 1 kHz is 3.5 and the specific resistance is 4.5 × 10
A vertical alignment film 20 of 15 Ωcm is formed and the TFT substrate 11
Get.

【0032】一方、対向基板51は、先ずガラス基板2
1上にカラーフィルタ層22及びコモン電極23を順次
形成後、その上に7.5°のプレチルト角を有し、第1
の実施の形態と同一の、1kHzでの誘電率が3.5、
比抵抗が4.8×1015Ωcmのチルト配向膜52を成
膜する。次いでチルト配向膜52にラビング処理を施
し、紫外線27照射時に電場ベクトルwにより分解しき
れずに残ったポリイミド分子31bを強制的に配向する
事により、チルト配向膜52の7.5°のプレチルト角
でのチルト配向機能を高めて、対向基板51を得る。
On the other hand, the opposite substrate 51 is first
1, a color filter layer 22 and a common electrode 23 are sequentially formed, and then a pre-tilt angle of 7.5 ° is formed thereon.
The dielectric constant at 1 kHz is 3.5, which is the same as that of the embodiment of FIG.
A tilt alignment film 52 having a specific resistance of 4.8 × 10 15 Ωcm is formed. Next, a rubbing treatment is performed on the tilt alignment film 52 to forcibly orient the remaining polyimide molecules 31b that have not been completely decomposed by the electric field vector w when irradiating the ultraviolet rays 27, so that the tilt alignment film 52 has a pre-tilt angle of 7.5 °. The counter substrate 51 is obtained by enhancing the tilt alignment function of the above.

【0033】この後TFT基板11、対向基板30をシ
ール剤13で貼り合わせ、液晶組成物14を封入後、偏
光板11a、位相差板付き偏光板51aを貼り付けて、
HAN型表示モードの液晶表示素子50を完成する。
After that, the TFT substrate 11 and the counter substrate 30 are bonded together with the sealant 13, and after the liquid crystal composition 14 is sealed, the polarizing plate 11a and the polarizing plate 51a with a retardation plate are bonded.
The liquid crystal display element 50 of the HAN type display mode is completed.

【0034】この様にしてなる、垂直配向膜20及びチ
ルト配向膜52を対向配置して作製した、HAN型表示
モードの液晶表示素子50に第1の実施の形態と同様
に、初期時及び1000時間通電後の焼き付き試験を行
い表示品位を評価したところ、初期時及び1000時間
通電後のいずれにおいても内部オフセット電圧を原因と
する焼き付きや表示不能による表示不良が見られず、良
好な表示画像を得られた。
As described in the first embodiment, the liquid crystal display element 50 of the HAN type display mode, which is manufactured by arranging the vertical alignment film 20 and the tilt alignment film 52 to face each other, at the initial time and at 1000 When the image quality was evaluated by performing a burn-in test after energizing for a period of time, there was no display failure due to burn-in or display failure due to the internal offset voltage at both the initial stage and after 1000 hours of energizing. Obtained.

【0035】この様に構成すれば、第1の実施の形態と
同様HAN型表示モードの液晶表示素子50にて対向配
置される垂直配向膜20とチルト配向膜52の誘電率及
び比抵抗の値が同じであり、内部オフセット電圧が発生
されず、更にチルト配向膜52をラビング処理すること
により、プレチルト角方向の配向機能が安定され、液晶
表示素子14をより確実に配向出来る事から、液晶表示
素子50は、焼き付きや表示不能による表示不良を生じ
ること無く高い表示品位を得られる。
According to this structure, the values of the dielectric constant and the specific resistance of the vertical alignment film 20 and the tilt alignment film 52 which are opposed to each other in the liquid crystal display element 50 in the HAN type display mode as in the first embodiment. Since no internal offset voltage is generated and the rubbing treatment of the tilt alignment film 52 stabilizes the alignment function in the pre-tilt angle direction, the liquid crystal display element 14 can be more reliably aligned. The element 50 can obtain high display quality without causing display failure due to burn-in or display failure.

【0036】他方これに対して、図6を参照してTFT
基板上の垂直配向膜の原材料膜と対向基板上のチルト配
向膜の原材料膜とに異種の原材料膜を用い、HAN型表
示モードの液晶表示素子60を形成した(比較例)につ
いて述べる。
On the other hand, referring to FIG.
A liquid crystal display element 60 of a HAN type display mode is formed by using different kinds of raw material films as a raw material film of a vertical alignment film on a substrate and a raw material film of a tilt alignment film on a counter substrate (Comparative Example).

【0037】この(比較例)は、ガラス基板16上のT
FT素子17と画素電極18上に第1の実施の形態と同
一の、1kHzでの誘電率が3.5、比抵抗が4.5×
10 15Ωcmの垂直配向膜20を成膜して、TFT基板
11を得る。一方、対向基板61上のチルト配向膜62
を、第1の実施の形態のチルト配向膜24に変えて、コ
モン電極23上に配向膜の原材料膜として、水平配向特
性を示す日産化学工業(株)社製SE−1211を用い
て成膜する。このチルト配向膜62は、プレチルト角
7.5°であり、1kHzでの誘電率が3.1、比抵抗
が1.1×10 Ωcmの電気的特性を有する。
This (Comparative Example) shows that the T
The same as in the first embodiment on the FT element 17 and the pixel electrode 18
First, the dielectric constant at 1 kHz is 3.5 and the specific resistance is 4.5 ×
10 FifteenThe vertical alignment film 20 of Ωcm is formed and the TFT substrate
Get 11. On the other hand, the tilt alignment film 62 on the opposite substrate 61
Is changed to the tilt alignment film 24 of the first embodiment,
As a raw material film for the alignment film on the
Using Nissan Chemical Industry Co., Ltd. SE-1211
To form a film. The tilt alignment film 62 has a pre-tilt angle
7.5 °, dielectric constant at 1 kHz is 3.1, specific resistance
Is 1.1 × 101 6It has electrical characteristics of Ωcm.

【0038】このチルト配向膜62を変える以外は、第
1の実施の形態と同様にして得た(比較例)のHAN型
表示モードの液晶表示素子60は、対向配置される垂直
配向膜20とチルト配向膜62の電気的特性が異なるこ
とにより、垂直配向膜20とチルト配向膜62間に内部
オフセット電圧を発生し、電位過剰による焼き付きを生
じてしまい、表示品位が著しく低下した。
The liquid crystal display element 60 in the HAN type display mode (comparative example) obtained in the same manner as in the first embodiment except that the tilt alignment film 62 is changed is the same as the vertical alignment film 20 which is opposed to each other. Due to the difference in the electrical characteristics of the tilt alignment film 62, an internal offset voltage was generated between the vertical alignment film 20 and the tilt alignment film 62, causing burn-in due to excess potential, and the display quality was significantly reduced.

【0039】尚本発明は上記実施の形態に限られるもの
で無く、その趣旨を変えない範囲での変更は可能であっ
て、例えば、垂直配向膜とチルト配向膜との電気的特性
がほぼ同じであれば、その原材料は限定されない。又電
気的特性を示す誘電率や比抵抗の値は、近いほど、内部
オフセット電圧の発生を低減出来るが、実験からは、±
10%であれば、良好な画像表示を得られ、全く問題が
無かった。更にチルト配向膜のプレチルト角度も任意で
ある。
The present invention is not limited to the above-described embodiment, but can be modified without departing from the spirit thereof. For example, the electrical characteristics of the vertical alignment film and the tilt alignment film are substantially the same. If so, the raw material is not limited. In addition, the closer the values of the dielectric constant and the specific resistance indicating the electrical characteristics are, the more the occurrence of the internal offset voltage can be reduced.
If it is 10%, a good image display can be obtained without any problem. Further, the pretilt angle of the tilt alignment film is also arbitrary.

【0040】又、塗布した配向膜の原材料膜を配向処理
する際に照射するエネルギーの種類も紫外線に限定され
ず、微粒子、エキシマレーザ、電子ビーム、又はイオン
ビーム、更にはこれらを組み合わせたものであっても良
い。更に基板の構造も、TFT基板側にカラーフィルタ
層を設ける等しても良い。
Further, the kind of energy to be applied when the applied raw material film of the alignment film is subjected to the alignment treatment is not limited to ultraviolet light, but may be fine particles, excimer laser, electron beam, or ion beam, or a combination thereof. There may be. Further, the structure of the substrate may be such that a color filter layer is provided on the TFT substrate side.

【0041】[0041]

【発明の効果】以上説明したように本発明によれば、低
消費電力化の実現を図るHAN型表示モードの液晶表示
素子において、垂直配向膜及びチルト配向膜を、両者の
電気的特性がほぼ同じになるよう形成することにより、
電圧印加時に内部オフセット電圧を発生することが無
く、焼き付きや表示不能による表示不良を生じることが
無く、低消費電力でありながら、良好な表示品位を有す
る液晶表示素子を得られる。
As described above, according to the present invention, in the liquid crystal display device of the HAN type display mode for realizing low power consumption, the vertical alignment film and the tilt alignment film have almost the same electrical characteristics. By forming to be the same,
It is possible to obtain a liquid crystal display element having good display quality with low power consumption without generating an internal offset voltage at the time of voltage application, without causing display failure due to burn-in or display failure.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施の形態における液晶表示素
子を示す概略断面図である。
FIG. 1 is a schematic sectional view showing a liquid crystal display device according to a first embodiment of the present invention.

【図2】本発明の第1の実施の形態における垂直配向膜
の配向方法を示す概略説明図である。
FIG. 2 is a schematic explanatory view illustrating an alignment method of a vertical alignment film according to the first embodiment of the present invention.

【図3】本発明の第1の実施の形態におけるチルト配向
膜の配向方法を示す概略説明図である。
FIG. 3 is a schematic explanatory view showing an alignment method of a tilt alignment film according to the first embodiment of the present invention.

【図4】本発明の第2の実施の形態における液晶表示素
子を示す概略断面図である。
FIG. 4 is a schematic sectional view showing a liquid crystal display device according to a second embodiment of the present invention.

【図5】本発明の第3の実施の形態における液晶表示素
子を示す概略断面図である。
FIG. 5 is a schematic sectional view showing a liquid crystal display device according to a third embodiment of the present invention.

【図6】比較例の液晶表示素子を示す概略断面図であ
る。
FIG. 6 is a schematic sectional view showing a liquid crystal display device of a comparative example.

【図7】従来のHAN型表示モードの液晶表示素子を示
す概略断面図である。
FIG. 7 is a schematic cross-sectional view showing a conventional HAN type display mode liquid crystal display element.

【符号の説明】[Explanation of symbols]

10…液晶表示素子 11…TFT基板 11a…偏光板 12…対向基板 12a…位相差板付き偏光板 13…シール剤 14…液晶組成物 14a…液晶分子 15…スペーサ 16…ガラス基板 17…TFT素子 18…画素電極 20…垂直配向膜 21…ガラス基板 22…カラーフィルタ層 23…コモン電極 24…チルト配向膜 26、27…紫外線 30、31…原材料膜 30a、30b、31a、31b…ポリイミド分子 DESCRIPTION OF SYMBOLS 10 ... Liquid crystal display element 11 ... TFT substrate 11a ... Polarizing plate 12 ... Counter substrate 12a ... Polarizing plate with a retardation plate 13 ... Sealing agent 14 ... Liquid crystal composition 14a ... Liquid crystal molecules 15 ... Spacer 16 ... Glass substrate 17 ... TFT element 18 ... pixel electrode 20 ... vertical alignment film 21 ... glass substrate 22 ... color filter layer 23 ... common electrode 24 ... tilt alignment film 26,27 ... ultraviolet light 30, 31 ... raw material film 30a, 30b, 31a, 31b ... polyimide molecule

Claims (10)

【特許請求の範囲】[Claims] 【請求項1】 少なくともいずれか一方に電極を有して
なり、対向配置される一対の基板と、 この一対の基板のいずれか一方に成膜され略垂直配向機
能を有する垂直配向膜と、 この垂直配向膜が形成される前記一方の基板に対向する
他方の基板に成膜され、チルト配向機能を有し前記垂直
配向膜の電気的特性とほぼ同等の電気的特性を示すチル
ト配向膜と、 前記垂直配向膜及び前記チルト配向膜とを対向するよう
対向配置してなる前記一対の基板の間隙に封入される液
晶組成物とを具備することを特徴とする液晶表示素子。
1. A pair of substrates which have electrodes on at least one of them and are arranged to face each other; a vertical alignment film formed on one of the pair of substrates and having a substantially vertical alignment function; A vertical alignment film is formed on the other substrate opposite to the one substrate on which the vertical alignment film is formed, and has a tilt alignment function, and a tilt alignment film having almost the same electrical characteristics as the electrical characteristics of the vertical alignment film; A liquid crystal composition sealed in a gap between the pair of substrates, wherein the liquid crystal composition is disposed so that the vertical alignment film and the tilt alignment film face each other.
【請求項2】 前記垂直配向膜と前記チルト配向膜の誘
電率の差及び比抵抗の差をそれぞれ±10%の範囲であ
ることを特徴とする請求項1に記載の液晶表示素子。
2. The liquid crystal display device according to claim 1, wherein a difference between a dielectric constant and a difference between specific resistances of the vertical alignment film and the tilt alignment film is in a range of ± 10%.
【請求項3】 前記垂直配向膜及び前記チルト配向膜の
原材料膜を同一種類とすることを特徴とする請求項1に
記載の液晶表示素子。
3. The liquid crystal display device according to claim 1, wherein raw material films of the vertical alignment film and the tilt alignment film are of the same type.
【請求項4】 前記垂直配向膜及び前記チルト配向膜の
原材料膜を、同一種類の水平配向膜材料であることを特
徴とする請求項1に記載の液晶表示素子。
4. The liquid crystal display device according to claim 1, wherein the raw material films of the vertical alignment film and the tilt alignment film are made of the same type of horizontal alignment film material.
【請求項5】 前記チルト配向膜のプレチルト角を0〜
10°とすることを特徴とする請求項1に記載の液晶表
示素子。
5. The pre-tilt angle of the tilt alignment film is 0 to 5.
2. The liquid crystal display device according to claim 1, wherein the angle is 10 [deg.].
【請求項6】 少なくともいずれか一方に電極を有する
第1及び第2の基板の、前記第1の基板に略垂直配向機
能を有する垂直配向膜を成膜し、前記第2の基板にチル
ト配向機能を有し前記垂直配向膜の電気的特性とほぼ同
等の電気的特性を示すチルト配向膜を形成後、前記垂直
配向膜及び前記チルト配向膜とを対向するよう対向配置
してなる前記第1の基板及び前記第2の基板の間隙に液
晶組成物を封入してなる液晶表示素子の製造方法におい
て、 前記第1の基板及び前記第2の基板に同一種類の配向膜
の原材料膜を成膜する工程と、 前記第1の基板に成膜される前記原材料膜に対して略垂
直方向に垂直配向エネルギーを照射して、略垂直配向機
能を付与する垂直配向処理工程と、 前記第2の基板に成膜される前記原材料膜に対して斜め
方向に、前記垂直配向エネルギーの総エネルギー量と略
等しい総エネルギー量のチルト配向エネルギーを照射し
て、チルト配向機能を付与するチルト配向処理工程と、
を具備することを特徴とする液晶表示素子の製造方法。
6. A vertical alignment film having a substantially vertical alignment function is formed on the first substrate of at least one of the first and second substrates having an electrode, and a tilt alignment is formed on the second substrate. After forming a tilt alignment film having a function and exhibiting substantially the same electrical characteristics as the electrical characteristics of the vertical alignment film, the first alignment film is disposed so that the vertical alignment film and the tilt alignment film face each other. In a method for manufacturing a liquid crystal display element, wherein a liquid crystal composition is sealed in a gap between the first substrate and the second substrate, a raw material film of the same type of alignment film is formed on the first substrate and the second substrate. A vertical alignment treatment step of irradiating the raw material film formed on the first substrate with a vertical alignment energy in a substantially vertical direction to impart a substantially vertical alignment function; and the second substrate. Oblique to the raw material film In the other direction, a tilt alignment processing step of irradiating a tilt alignment energy of a total energy amount substantially equal to the total energy amount of the vertical alignment energy, and imparting a tilt alignment function,
A method for manufacturing a liquid crystal display device, comprising:
【請求項7】 前記垂直配向エネルギーの照射及び前記
チルト配向エネルギーの照射は、前記配向膜の原材料膜
への微粒子又は紫外線又はエキシマレーザ又は電子ビー
ム又はイオンビーム又はこれらの組み合わせを照射する
ことを特徴とする請求項6に記載の液晶表示素子の製造
方法。
7. The irradiation of the vertical alignment energy and the irradiation of the tilt alignment energy are performed by irradiating the raw material film of the alignment film with fine particles, ultraviolet light, excimer laser, electron beam, ion beam, or a combination thereof. The method for manufacturing a liquid crystal display element according to claim 6.
【請求項8】 前記チルト配向処理工程は、前記第2の
基板に成膜される前記原材料膜にチルト配向エネルギー
を照射した後に、前記原材料膜をラビング処理操作する
工程を含むことを特徴とする請求項6に記載の液晶表示
素子の製造方法。
8. The tilt alignment processing step includes a step of rubbing the raw material film after irradiating the raw material film formed on the second substrate with tilt alignment energy. A method for manufacturing a liquid crystal display device according to claim 6.
【請求項9】 前記第1の基板及び前記第2の基板に成
膜する配向膜の原材料膜を、同一種類の水平配向膜の原
材料膜とすることを特徴とする請求項6に記載の液晶表
示素子の製造方法。
9. The liquid crystal according to claim 6, wherein a raw material film of an alignment film formed on the first substrate and the second substrate is a raw material film of a horizontal alignment film of the same type. A method for manufacturing a display element.
【請求項10】 前記チルト配向膜のプレチルト角を0
〜10°とすることを特徴とする請求項6に記載の液晶
表示素子の製造方法。
10. The pre-tilt angle of the tilt alignment film is set to 0.
The method for manufacturing a liquid crystal display element according to claim 6, wherein the angle is set to 10 to 10.
JP2001010322A 2001-01-18 2001-01-18 Liquid crystal display element and method of manufacturing liquid crystal display element Pending JP2002214615A (en)

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Publications (1)

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Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012159818A (en) * 2011-02-01 2012-08-23 Samsung Electronics Co Ltd Liquid crystal display device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012159818A (en) * 2011-02-01 2012-08-23 Samsung Electronics Co Ltd Liquid crystal display device
US8632862B2 (en) 2011-02-01 2014-01-21 Samsung Display Co., Ltd. Vertical alignment layer and liquid crystal display including the same
US9244309B2 (en) 2011-02-01 2016-01-26 Samsung Display Co., Ltd. Vertical alignment layer and liquid crystal display including the same
KR101806351B1 (en) * 2011-02-01 2018-01-11 삼성디스플레이 주식회사 Vertical alignment layer and liquid crystal display including the same

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