JP2002208872A - Low distortion high-frequency switching module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the distortion of a high-frequency switching module used in a multiband portable telephone set low level. SOLUTION: The high-frequency switching module selecting a plurality of different transmission/reception systems and switching the transmission circuit, and the reception circuit of the transmission/reception system is constituted of a branching filter circuit and a plurality of switching circuits. The branching filter circuit has a function of dividing a reception signal from an antenna into a plurality of transmission/reception systems. The switch circuit obtains a function for switching a signal from the branching filter circuit to the reception circuit at reception and a signal from the transmission circuit to the branching filter circuit at transmission, by the control action of the on/off operation of a diode. A plurality of control voltage terminals selecting transmission are installed in the switching circuit. At transmission, a positive voltage is applied to one of a plurality of control voltage terminals and a resistor control operation current at the transmission of the transmission/reception system is made common, so that reverse bias is applied to the diode of the transmission/ reception system on non-operation side.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency composite component, and more particularly to a high-frequency switch module capable of handling a plurality of transmission / reception systems and suppressing generation of harmonics.

[0002]

2. Description of the Related Art In recent years, portable telephones have become extremely popular. Along with this, the functions and services of mobile phones have been further improved. As a part of this, ordinary mobile phones have been a single transmission / reception system, but dual-band mobile phones capable of handling two transmission / reception systems have been developed and are being put to practical use mainly in Europe and the like. As a result, a transmission / reception system that is convenient for the user is selected, and advanced services can be received.

In a dual-band mobile phone, if a dedicated transmission / reception circuit is provided, it is disadvantageous to reduce the weight and size of the mobile phone and reduce the cost. In practice, the antenna is shared and the first
The above-mentioned problem has been solved by using a high-frequency switch for switching between the transmitting and receiving circuit and the second transmitting and receiving circuit.

FIG. 11 is a circuit diagram of a high-frequency switch module disclosed in Japanese Patent Application Laid-Open No. H11-313003. An object of the present invention is to simplify the circuit configuration. As shown in the figure, the high-frequency switch 30 includes a first transmission / reception system 10 and a second transmission / reception system 20, and switches between the transmission / reception systems using the antenna 32 in common. In a dual-band mobile phone, the first signal system 10 is GSM
System (TX: 880-915 MHz, reception R
X: 925-960 MHz) and the second transmitting / receiving system 20
To the DCS system (transmission TX: 1710 to 1785 MH
z, reception RX: 1805 to 1880 MHz).

The first transmission / reception system 10 includes a notch circuit 11 and a switch circuit 13, and a second transmission / reception system 20.
Comprises a notch circuit 21 and a switch circuit 23. The notch circuit 11 and the notch circuit 21 are combined to form a demultiplexing circuit 31 that demultiplexes the signal received by the antenna 32 to the switch circuits 13 and 23 of the transmission / reception system that requires the signal. On the other hand, switch circuit 1
Both circuits 3 and 23 have the same circuit configuration. A diode is inserted at the position shown in the figure, and the voltage applied to the first control voltage terminal 19, the second control voltage terminal 29 and the third control voltage terminal 22 is positive. The reception mode or the transmission mode is selected depending on whether the voltage is 0 or 0.

For example, when the first transmission / reception system 10 is in the transmission mode, when the first control voltage terminal 19 is controlled to a positive voltage and the second and third control voltage terminals 29 and 22 are controlled to a voltage of 0, The diodes DG1 and DG2 are turned on, and when a transmission signal is further applied to the transmission terminal 15, the transmission signal passes through the capacitor CG2 and passes through CG3, CG4, C3.
It passes through a low-pass filter composed of G7 and LG3 and a diode DG1, and reaches one end of a transmission line LG2. At this time, since the diode DG2 is conducting, the other end of the LG2 is AC grounded. LG2 is λ /
4, the impedance when viewed from one end of the transmission line LG2 toward the receiving terminal 17 becomes infinite. Therefore, the signal that has reached LG2 is directed to the antenna 32 without being transmitted to the receiving terminal 17.

In the receiving mode, the first and second control voltage terminals 19 and 29 are set to a voltage of 0, and the third control voltage terminal 22 is set to a positive voltage. As a result, the diodes DG1 and DG2 are reverse-biased and become non-conductive contrary to the time of transmission, so that the signal received by the antenna 32 passes through the notch circuit 11 which is a part of the branching circuit, and furthermore, the transmission line LG2 and the capacitor The signal passes through the CG 5 to the receiving terminal 17.

On the other hand, at the time of transmission of the second transmission / reception system 20, the second control voltage terminal 29 is set to a positive voltage and the first and third control voltage terminals 19 and 22 are set to a voltage of 0 according to the same operation principle. On the other hand, at the time of reception, the third control voltage terminal 22 is set to a positive voltage, and the first and second control voltage terminals 19, 29
To a voltage of 0. As can be seen from the above description, the third control voltage terminal 22 is a common terminal for the first transmission / reception system 10 and the second transmission / reception system 20. For this reason, in the above-mentioned circuit, the control voltage terminal is shared, and the omission of the circuit and the reduction of the number of components can be realized.

[0009]

In the high-frequency switch circuit using the prior art described above, the amount of harmonics generated during transmission is large, and the generation of harmonics exceeding the standard (eg, GSM standard) is recognized. There is. In particular, it has been found that the amount of generation of harmonics is large during transmission of the first transmission / reception system on the low frequency side. As the analysis further proceeds and the propagation path is examined, the transmission signal of the first transmission / reception system goes around to the second transmission / reception system via the demultiplexing circuit, reaches the diode DP1, and this diode DP1 is the main source of harmonic generation. Identified the cause.

[0010] This generation mechanism will be described with reference to FIG. 11. First, when the first transmission / reception system 10 is in the transmission mode,
When the first control voltage terminal 19 is at a positive voltage, the second and third
Are controlled to zero voltage. For this reason, in the diodes DP1 and DP2 in the switch circuit of the second transmission / reception system, the anode and the cathode are in an unbiased state. At this time, the transmission signal of the first transmission / reception system 10 reaches the anode side of the diode DP1 via the notch circuit 11 and the notch circuit 21. Since the diode DP1 is in an unbiased state and is in an unstable potential state, a non-linear operation occurs, and a harmonic of a reaching signal is generated. After all, this harmonic is transmitted through the notch circuit 21 to the antenna 3
It is radiated from 2.

Accordingly, the present invention provides a high-frequency switch module which suppresses the generation of such harmonics and which can achieve low distortion with a simple configuration. Further, the present invention provides a small-sized, low-cost, low-distortion, high-frequency switch module having a one-chip module configuration.

[0012]

FIG. 1 shows the measurement results of harmonics when a reverse bias is applied to a diode, particularly a second harmonic having a large amount of generation. The horizontal axis represents the reverse bias voltage Vbias, and the vertical axis represents the harmonic generation (second harmonic) generation amount N. As shown in the figure, when Vbias is increased, the effect of reducing the amount of generated harmonics is observed, and when 0.5 V or more is applied, -36 dBm of the GSM standard can be cleared by a remarkable effect. From these results, it can be seen that applying a reverse bias voltage to the diode of the high-frequency switch circuit to achieve a stable potential state has the effect of reducing harmonic generation, and that this effect requires a voltage value equal to or higher than a predetermined value. I learned.

That is, the present invention is a high-frequency switch module for selecting a plurality of different transmitting / receiving systems and switching between a transmitting circuit and a receiving circuit of the transmitting / receiving system. Circuit, and a plurality of switch circuits that perform a function of switching a signal from the demultiplexing circuit to a receiving circuit during reception and a signal from the transmission circuit to a demultiplexing circuit during transmission by controlling the on / off operation of a diode. These switch circuits are provided with a plurality of control voltage terminals for selecting transmission, apply a positive voltage to any of the plurality of control voltage terminals at the time of transmission, and reduce the operating current of the transmission / reception system during transmission. A low-distortion high-frequency switch module that uses a common control resistor to apply a reverse bias to the non-operating transmitting / receiving diode. That. Here, specifically, it is preferable that the voltage terminal of the receiving system is used as a common control voltage terminal, and a resistor is interposed here, or the common voltage terminal is grounded via a resistor. It is desirable that the reverse bias voltage be 0.5 V or more.

The present invention is particularly applicable to a high-frequency switch module that handles two transmission / reception systems. At this time, the switch circuit of the first transmitting / receiving system (low frequency side) and the second
A first control voltage terminal for controlling the first transmission system, the first control voltage terminal comprising:
A second control voltage terminal for controlling the transmission system of the first and second transmission / reception systems, and a common third control voltage terminal for controlling the first reception system and the second reception system. The switch circuit includes first and second diodes, respectively. The anode side of the first diode of each transmission / reception system is connected to the antenna, the cathode side is connected to the transmission terminal, and the anode side of the second diode is A first or second voltage terminal; a cathode side connected to a receiving terminal;
A low-distortion high-frequency switch module in which the cathode side of the diode is connected to the third control voltage terminal via a transmission line or a chip inductor. Here, the third
It is preferable that the low-distortion high-frequency switch module is connected by inserting a resistor before the control voltage terminal.

Further, the present invention provides a high-frequency switch module comprising a laminated body in which a plurality of dielectric green sheets formed by appropriately forming an electrode pattern are sequentially laminated, and a chip element arranged on the laminated body. This is a low distortion high frequency switch module made into a chip. Here, it is preferable that the transmission line constituting the switch circuit and the branching circuit are respectively constituted by an electrode pattern in a laminate.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to two different communication systems, that is, a GSM system as a first transmission / reception system and a DCS system as a second transmission / reception system. FIG. 2 is a circuit block diagram illustrating the outline of the present invention.
FIG. 4 shows an equivalent circuit diagram. Hereinafter, the same functions or parts use the reference numerals used in FIG. Therefore, although a detailed description is omitted, the demultiplexing circuit portion connected to the antenna ANT generally has two notch circuits as a main circuit, and a GSM is formed by an inductor LF1 and a capacitor CF1.
The notch circuit 11 on the DCS side is constituted by the inductor LF2 and the capacitor CF2. The notch circuit 11 and the notch circuit 21 constitute a branching circuit 31. The switch circuit includes a first switch circuit 13 and a second switch circuit 23. The first switch circuit 13 includes a GSM transmission TX and a reception R
X, and two diodes DG1, DG
2 and two transmission lines LG1 and LG2. The diode DG1 has an anode connected to the antenna ANT side, a cathode connected to the transmission TX side, and a transmission line LG1 connected to the ground connected to the cathode side. ing. A transmission line LG2 is provided between the antenna side and the reception RX.
Is connected, a diode DG2 having a cathode connected to the receiving side is connected, and a capacitor CG6 is connected between the anode of the diode DG2 and the ground,
In the meantime, the inductor LG is connected and serves as a first control voltage terminal VC1 for diode control. The low-pass filter circuit 14 inserted into the transmission path includes an inductor LG3, capacitors CG3, CG4, and CG7, and is inserted between the diode DG1 of the switch circuit SW and the transmission line LG1.

Similarly, the second switch circuit switches between DCS transmission TX and reception RX, and includes two diodes DP1 and DP2 and two transmission lines LP1 and LP2.
The diode DP1 has a transmission line LP whose anode is connected to the antenna ANT side, whose cathode is connected to the transmission TX side, and whose cathode side is connected to the ground.
1 is connected. A transmission line LP2 is connected between the antenna side and the reception RX, a diode DP2 having a cathode connected to the reception side is connected, and a capacitor C is connected between the anode of the diode DP2 and the ground.
P6 is connected, while the inductor LP is connected,
This is a second control voltage terminal VC2 for diode control. The low-pass filter circuit 24 inserted in the transmission path includes an inductor LP3 and capacitors CP3 and C3.
P4 and CP7, which are inserted between the diode DP1 of the switch circuit SW and the transmission line LP1.

Next, the transmission line LG1 of the first switch circuit 13 and the transmission line LP1 of the second switch circuit 23 are grounded by a capacitor CGP, and a resistor R
r, a third control voltage terminal VC for diode control
3 is connected. Therefore, the configuration of the embodiment differs from the related art in that a resistor Rr for controlling the operating current during transmission common to the switch circuits 13 and 23 is provided, and the resistor Rr is provided with a reception common to the switch circuits 13 and 23. Is connected.

Next, a circuit block diagram of FIG. 3 shows a modification of FIG. 2, that is, a circuit in which the third control voltage terminal 22 is grounded. In this case, the number of voltage sources can be reduced by one. In the case of FIG. 2, the control method at the time of transmission / reception is the same as that of the related art.
Are obtained by a combination of the following voltages. On the other hand, in FIG. 3, a positive voltage is applied to the first or second control voltage terminal 19 or 29 when the transmission mode is selected, and the first and second control voltage terminals are selected when the reception mode is selected. 19, 2
A voltage of 0 is applied to 9. As described above, the present invention applies a reverse bias to the non-operation side diode by sharing the positive voltage applied from the operation side control voltage terminal and the resistance for controlling the operation current at the time of transmission. It is intended. As a result, harmonics generated by the high-frequency switch module can be reduced, and the number of resistors for controlling the operating current during transmission can be reduced.

FIG. 4 is an equivalent circuit diagram showing an embodiment according to the present invention. When the GSM system 10 is selected in the transmission mode, a positive voltage, a second voltage and a second voltage are applied to the first control voltage terminal 19. This is a state in which a voltage of 0 is applied to the third control voltage terminals 22 and 29. Since a forward current flows through the diodes DG1 and DG2 in the same manner as in the conventional case, the GSM system transmission signal is input from the transmission terminal 15 to the GSM system transmission signal.
And radiated into space. On the other hand, Rr-LP1-LP
In the closed circuit composed of 3-DP1-LP2-DP2-LP, the voltage at the connection point I generated by the resistor Rr is applied. However, since the diodes DP1 and DP2 have opposite polarities to the applied voltage, they are reverse-biased. You. As a result, the transmission signal of the GSM system propagated from the branching circuit reaches the anode of the diode DP1, but the diode D1
Since P1 is reverse-biased, it is in a stable potential state, and the amount of generation of harmonics is reduced.

FIG. 5 shows another embodiment. As can be easily understood from comparison with the circuit diagram of FIG. 4, in this embodiment, the polarity of each diode is reversed, and the positions of the first and second control voltage terminals and the third control voltage terminal are almost interchanged. Configuration. Even if the control voltage terminals are exchanged in this way, the switching of the transmission or reception mode of each transmission / reception system is the same as in FIG. When the GSM system 10 is selected for the transmission mode, the first control voltage terminal 19 is applied with a positive voltage, and the second and third control voltage terminals 22 and 29 are applied with zero voltage. is there. Under this voltage application condition, diodes DG3 and DG4 conduct, and diodes DP3 and DP4 are reverse-biased, which is the same as that shown in FIG.

FIGS. 6 and 7 show still another embodiment. FIG.
Is a modification of FIG. 4, and FIG. 7 is a modification of FIG. That is, a circuit in which the third control voltage terminal 22 is grounded,
In this case, one voltage source can be omitted. Also,
The circuit configuration of the above-described example is not limited to the dual band, but can be applied to a multi-band such as a triple band and a quattro band.

Next, a description will be given of a one-chip module structure. FIG. 8 is a plan view of an embodiment for constructing the equivalent circuit diagram shown in FIG. 4, FIG. 9 is a perspective view of a laminated body portion of the embodiment, and FIG. 10 is an internal structure thereof. In this embodiment, the transmission lines of the demultiplexing circuit, the low-pass filter circuit, and the switch circuit are configured in a laminate, and a diode,
A chip capacitor is mounted on the laminate to constitute a one-chip high frequency switch module. This laminate is prepared by preparing a green sheet made of a ceramic dielectric material that can be fired at a low temperature, and printing a conductive paste mainly composed of Ag on the green sheet,
A desired electrode pattern is formed, the layers are appropriately laminated, and integrally fired.

The internal structure will be described in the order of lamination. First, a ground electrode 31 'is formed on almost the entire surface of the lower green sheet 110. The terminal electrodes 81, 83, 85, 87, 89,
Connection parts for connection to 91, 93, and 95 are provided. Also, a hole 9 is formed in the ground electrode 31 '. Next, a dummy green sheet 120 on which no electrode pattern is printed is laminated. On the green sheet 130 thereon, three line electrodes 41, 42, 4
3 are formed, and the green sheet 140 thereon has 4
Two line electrodes 44, 45, 46, 47 are formed. A green sheet 150 on which two through-hole electrodes (the cross-shaped circle is a through-hole electrode in the figure is a through-hole electrode) is laminated thereon, and a ground electrode 32 'is formed thereon. Green sheets 160 are stacked. This ground electrode 32 'is shaped to avoid the through-hole electrode. These two earth electrodes 3
The line electrodes formed in the region sandwiched between 1 ′ and 32 ′ are appropriately connected to form a transmission line for the first and second switch circuits SW. The line electrodes 42 and 46 are connected by through-hole electrodes to form a transmission line LG1 of an equivalent circuit. The line electrodes 41 and 45 are connected by through-hole electrodes to form a transmission line LG2 of an equivalent circuit. Reference numeral 47 is connected by a through-hole electrode to constitute a transmission line LP1 of an equivalent circuit, and line electrode 44 constitutes a transmission line LP2 of the equivalent circuit.

The green sheet 170 laminated on the green sheet 160 has electrodes 61 and 6 for capacitors.
2, 63, 64, 65 and 66 are formed. The electrodes 67, 68, 69, and 70 for capacitors are also formed on the green sheet 180 laminated thereon. On the green sheet 190 laminated thereon, the capacitor electrode 71 is formed. Further, a green sheet 200 on which line electrodes 48 and 49 are formed is laminated thereon, and the line electrodes 50, 51, 52, 53, 5
The green sheets 210 on which 4, 55 are formed are stacked. Further, a wiring pattern is formed on the green sheet 220 thereon, and the uppermost green sheet 23 is formed.
At 0, lands for mounting element connection are formed.

The green sheet 17 laminated on the green sheet 160 on which the upper earth electrode 32 'is formed
0, 61, 62, 63, 64, 65 of the capacitor electrode
Forms a capacitance with the ground electrode 32, the capacitor electrode 61 is connected to the equivalent circuit CG 4, the capacitor electrode 62 is connected to the equivalent circuit CG 3, and the capacitor electrode 63
Represents the equivalent circuit CP4, the capacitor electrode 64 constitutes the equivalent circuit CP3, and the capacitor electrode 65 constitutes the equivalent circuit CF3. Green sheet 170,
The capacitor electrodes formed at 180 and 190 form a capacitance between each other, and between the capacitor electrodes 66 and 70 constitute a CF4 of an equivalent circuit.
9, an equivalent circuit CP7 is formed between the capacitor electrodes 62 and 67, an equivalent circuit CG7 is formed between the capacitor electrodes 62 and 67, and an equivalent circuit CF2 is formed between the capacitor electrodes 70 and 71. And 71, the equivalent circuit CF
1. Green sheets 200 and 21
At 0, the line electrodes 48 and 55 constitute an equivalent circuit LF1, the line electrodes 54 and 56 constitute an equivalent circuit LF2, the line electrodes 49 and 53 constitute an equivalent circuit LF3, and the line electrode 50 is equivalent. The LG3 of the circuit is configured, and the line electrode 52 configures LP3 of the equivalent circuit. In addition,
The line electrode 51 is a DC line.

These green sheets were pressed and fired integrally to obtain a laminate. A terminal electrode 8 is provided on the side surface of the laminate.
1, 82, 83, 84, 85, 86, 87, 88, 8
9, 90, 91, 92, 93, 94, 95, 96 were formed. Diodes DG1, DG2,
DP1, DP2, chip capacitors CG1, CG6, C
Equipped with P6 and CGP. In addition, chip inductor LP
4. The chip capacitor CP8 is mounted.
The C series circuit need not be mounted. A metal case is placed over the diode, chip capacitor, and chip inductor.

According to this embodiment, when the transmission lines of the first and second switch circuits are formed in the laminate, they are arranged in a region sandwiched between the ground electrodes. This prevents interference between the switch circuit, the demultiplexing circuit, and the low-pass filter circuit. The region sandwiched between the ground electrodes is arranged at the lower part of the laminate so that a ground potential can be easily obtained. Then, an electrode constituting a capacitor connected to the ground is formed so as to face the upper ground electrode. Further, by configuring this transmission line portion below the laminate, the ground electrode can be arranged below the laminate, and the influence of the mounting substrate can be reduced. Furthermore, by disposing a capacitor electrode for forming a capacitor facing the ground electrode next thereto and arranging the inductance components of the low-pass filter circuit and the demultiplexing circuit on the upper part, the inductance component can be separated from the ground electrode, and the short-circuit can be achieved. The required inductance value can be obtained by the transmission line length. Thus, the size of the high-frequency switch module can be reduced.

In the terminal electrodes formed on the side surfaces of the laminate of this embodiment, the GSM transmission TX terminal, the reception RX terminal, and the DCS , A transmission TX terminal and a reception RX terminal are formed. Since the high-frequency switch module is disposed between the antenna and the transmission / reception circuit, this terminal arrangement allows the antenna and the high-frequency switch module and the transmission / reception circuit and the high-frequency switch module to be connected with the shortest line, and an extra loss Can be prevented. Furthermore, on the other side, on one half,
A transmission TX terminal of the GSM system and a transmission TX terminal of the DCS system are formed, and a reception RX terminal of the GSM system is provided on the other side.
A receiving RX terminal of a DCS system is formed. Since the two transmitting circuits and the two receiving circuits are arranged collectively, the transmitting terminals of the high-frequency switch module are
By arranging the receiving terminals close to each other, connection with the shortest path is possible, and extra loss can be prevented.

Further, in the laminate of this embodiment, the antenna ANT terminal formed on the side surface, the GSM transmission TX terminal, the reception RX terminal, the DCS transmission TX terminal, and the reception RX
Each of the terminals and the voltage terminals VC1, VC2, and VC3 has a ground terminal formed between the terminals when viewed in the circumferential direction of the side surface, and each terminal is sandwiched by the ground terminals. Each input / output terminal (RF terminal) is arranged between the ground terminals. As a result, signal leakage between the terminals is blocked, interference is eliminated, and isolation between the signal terminals is ensured. In addition, there is a ground terminal on each side, so that the structure has a low loss.

The embodiment of the above-mentioned laminated structure corresponds to the circuit block diagram of the first embodiment shown in FIG. 4, but other circuits can be easily formed within the scope of the present invention. be able to. For example, it is possible to change the electrode pattern of the inductor component and the capacitor component and change the connection method. According to the embodiment of the present invention, for example, in a dual-band mobile phone, it can be used for a portion connecting two systems and one antenna, and a plurality of circuit configurations can be configured on one chip. For this reason,
Compared to a method of separately mounting and connecting a plurality of circuit elements, there are advantages such as a reduction in the number of components, a reduction in man-hours, and a reduction in size.

[0032]

According to the present invention, harmonics generated from the high-frequency switch module, which has been a problem in the past, can be reduced with a simple circuit configuration. In addition, the present invention allows the low-distortion high-frequency module to be formed in a single chip in a small size by using a laminated structure, and contributes to miniaturization and cost reduction of equipment.

[Brief description of the drawings]

FIG. 1 is a characteristic diagram showing a diode reverse bias voltage versus a harmonic generation amount.

FIG. 2 is a circuit block diagram for explaining the present invention.

FIG. 3 is a circuit block diagram of another embodiment according to the present invention.

FIG. 4 is an equivalent circuit diagram showing one embodiment according to the present invention.

FIG. 5 is an equivalent circuit diagram showing another embodiment according to the present invention.

FIG. 6 is an equivalent circuit diagram showing a modification of the embodiment shown in FIG. 4;

FIG. 7 is an equivalent circuit diagram showing a modification of the embodiment shown in FIG. 5;

FIG. 8 is a plan view of an embodiment for forming the equivalent circuit diagram shown in FIG. 4;

FIG. 9 is a perspective view of a laminated body part of the embodiment of FIG. 8;

FIG. 10 is an internal structural view of the laminated body according to the embodiment of FIG. 8;

FIG. 11 is an equivalent circuit diagram showing a conventional technique.

[Explanation of symbols]

 10: first transmission / reception system 11, 21: notch circuit 13, 23: switch circuit 14, 24: low-pass filter 15, 25: transmission terminal 17, 27: reception terminal 19: first control voltage terminal 20: second Transmission / reception system 22: Third control voltage terminal 29: Second control voltage terminal 30: High frequency switch 31: Demultiplexer 32: Antenna

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 5J012 BA03 BA04 5K011 DA22 DA27 FA01 GA04 JA01 KA05

Claims (6)

[Claims] 1. A high-frequency switch module for selecting a plurality of different transmission / reception systems and switching between a transmission circuit and a reception circuit of the transmission / reception system, comprising: a demultiplexer circuit for demultiplexing a reception signal from an antenna to the plurality of transmission / reception systems; A plurality of switch circuits that perform the function of switching the signal from the transmission circuit to the demultiplexer circuit at the time of transmission by controlling the on / off operation of the diode. The switch circuit is provided with a plurality of control voltage terminals for selecting transmission, applies a positive voltage to any of the plurality of control voltage terminals during transmission, and controls an operation current of the transmission / reception system during transmission. A low-distortion high-frequency switch module characterized in that a reverse bias is applied to a non-operating transmission / reception system diode by using a common resistance. 2. The low distortion high frequency switch module according to claim 1, wherein a voltage value of the reverse bias is 0.5 V or more. 3. A first control voltage terminal having a first transmission / reception system (low-frequency side) and a second transmission / reception system (high-frequency side) for controlling the first transmission system, A second control voltage terminal for controlling a transmission system; and a shared third control voltage terminal for controlling the first reception system and the second reception system. The switch circuit includes first and second diodes, respectively. The anode side of the first diode of each transmission / reception system is connected to the antenna, the cathode side is connected to the transmission terminal, and the anode side of the second diode is the first side. A cathode side is connected to a receiving terminal, and a cathode side of each of the first diodes is connected to the third control voltage terminal via a transmission line or a chip inductor. 3. The method according to claim 1, wherein: Low distortion high frequency switch module. 4. The low-distortion high-frequency switch module according to claim 3, wherein a resistor is inserted and connected before the third control voltage terminal. 5. A one-chip structure comprising a laminated body in which a plurality of dielectric green sheets on which electrode patterns are formed are sequentially laminated, and a chip element arranged on the laminated body. The low distortion high frequency switch module according to claim 1. 6. The low-distortion high-frequency switch module according to claim 5, wherein the transmission line forming the switch circuit and the branching circuit are each formed by an electrode pattern in a laminate.