JP2002198383A - Method and equipment for fabricating electronics component - Google Patents

Method and equipment for fabricating electronics component

Info

Publication number
JP2002198383A
JP2002198383A JP2000396803A JP2000396803A JP2002198383A JP 2002198383 A JP2002198383 A JP 2002198383A JP 2000396803 A JP2000396803 A JP 2000396803A JP 2000396803 A JP2000396803 A JP 2000396803A JP 2002198383 A JP2002198383 A JP 2002198383A
Authority
JP
Japan
Prior art keywords
liquid resin
substrate
electronic component
heating
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000396803A
Other languages
Japanese (ja)
Other versions
JP3681636B2 (en
Inventor
Atsushi Okuno
敦史 奥野
Noritaka Oyama
紀隆 大山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyu Rec Co Ltd
Original Assignee
Sanyu Rec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyu Rec Co Ltd filed Critical Sanyu Rec Co Ltd
Priority to JP2000396803A priority Critical patent/JP3681636B2/en
Publication of JP2002198383A publication Critical patent/JP2002198383A/en
Application granted granted Critical
Publication of JP3681636B2 publication Critical patent/JP3681636B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01055Cesium [Cs]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01087Francium [Fr]

Landscapes

  • Credit Cards Or The Like (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method and equipment for fabricating an electronics component, in which the electronic component is fabricated without leaving bubbles or voids in a liquid resin and with high reliability even in the case a small size electronic component is fabricated. SOLUTION: The method comprises an encapsulation process S10 for encapsulating the electronics component mounted on a substrate, a pressurization process S12 for making the substrate mounted with the electronic component encapsulated with the liquid resin into a pressurized state, a heating pressurization process S13 for extinguishing remaining voids in the liquid resin by making the substrate into a heated pressurized state by heating the substrate under a pressurized state, and a hardening process S16 to harden the liquid resin by making the substrate into a heated state.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、電子部品の製造方
法及び装置に係り、特に携帯電話、腕時計、IC(Inte
grated Circuit)カード、電子式卓上計算機、ディジタ
ルカメラ等の小型・軽量・堅牢性が求められる用途に使
用される電子部品の製造方法及び装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing an electronic component, and more particularly, to a mobile phone, a wristwatch, an IC (Integer).
The present invention relates to a method and an apparatus for manufacturing an electronic component used for applications requiring small size, light weight and robustness, such as a card, an electronic desk calculator, and a digital camera.

【0002】[0002]

【従来の技術】近年、携帯電話を代表として種々の情報
端末装置の携帯性が重視され、小型化及び軽量化が図ら
れている。また、現在一般的に用いられている銀行のク
レジットカードや定期券等のカードは情報を磁気的に記
録するものであるが、今後個人情報の漏洩や改竄を防止
する観点から情報の盗用や改竄が困難なICカードが一
般的に普及するものと考えられる。これらの情報端末装
置やICカード内には各種の半導体素子が内蔵されてい
るが、情報端末装置やICカードの外形形状が制限され
るため、内蔵される半導体素子の外形寸法が重量も小型
・軽量化される。また、使用者に携帯される上記情報端
末装置やICカードは、単に小型・計量であるばかりで
はなく堅牢であることが求められる。更に、半導体素子
一般について、経時変化が少なく高い信頼性を有するこ
とが求められる。
2. Description of the Related Art In recent years, the importance of portability of various information terminal devices such as mobile phones has been emphasized, and miniaturization and weight reduction have been achieved. Cards such as bank credit cards and commuter passes that are generally used at present generally record information magnetically. However, from the perspective of preventing leakage or tampering of personal information, theft or tampering of information will be attempted in the future. It is considered that IC cards, which are difficult to use, are widely used. Various types of semiconductor elements are built in these information terminal devices and IC cards. However, since the external shape of the information terminal devices and IC cards is limited, the external dimensions of the built-in semiconductor elements are small and light. Weight is reduced. Further, the information terminal device and the IC card carried by the user are required to be not only compact and weighing but also robust. Furthermore, semiconductor devices in general are required to have high reliability with little change over time.

【0003】半導体素子の高信頼化を実現する技術とし
て、例えば特開平1−207935号公報に開示された
技術が案出されている。この公報では、半導体素子を基
板上に搭載し、半導体素子に形成された電極と基板に形
成された電極とをボンディングにより接続し、塩素含有
量が500ppm以下のエポキシ樹脂からなる液状樹脂
で封止した後、0.1〜5.0kg/cm3程度に加圧
しながら樹脂を硬化させることにより半導体チップを封
止する技術を開示している。かかる工程を経ることによ
り、樹脂の硬化前又は硬化中に生ずる微少な気泡の発生
を抑制するとともに、樹脂とフィラーの密着性を向上さ
せることによって、水分の侵入による半導体チップのア
ルミ配線の腐食や絶縁性の低下を防止して信頼性を高め
ている。
As a technique for realizing high reliability of a semiconductor element, for example, a technique disclosed in Japanese Patent Application Laid-Open No. Hei 1-207935 has been devised. In this publication, a semiconductor element is mounted on a substrate, an electrode formed on the semiconductor element and an electrode formed on the substrate are connected by bonding, and sealed with a liquid resin made of an epoxy resin having a chlorine content of 500 ppm or less. After that, a technique is disclosed in which a semiconductor chip is sealed by curing a resin while applying pressure to about 0.1 to 5.0 kg / cm 3 . Through these steps, it is possible to suppress the generation of microscopic bubbles generated before or during the curing of the resin, and to improve the adhesion between the resin and the filler, thereby preventing corrosion of aluminum wiring of the semiconductor chip due to intrusion of moisture. The reliability is improved by preventing the insulation from lowering.

【0004】[0004]

【発明が解決しようとする課題】ところで、半導体チッ
プを液状樹脂で封止する方法は様々な方法があるが、基
板上に搭載された半導体チップの位置に応じて孔が形成
された孔版と、孔版上を摺動するスキージとを用いた印
刷封止法が同出願人等から案出されている。この方法
は、孔版上に液状樹脂を滴下した状態でスキージを摺動
させることにより、液状樹脂を孔版に形成された孔に充
填して液状樹脂を基板上に印刷する方法である。孔版の
孔は半導体チップの位置に応じて形成されているため、
印刷により半導体チップは封止されることになる。
By the way, there are various methods for sealing a semiconductor chip with a liquid resin, and a stencil in which holes are formed in accordance with the position of the semiconductor chip mounted on the substrate, A printing sealing method using a squeegee sliding on a stencil has been devised by the applicant and the like. In this method, the squeegee is slid while the liquid resin is dropped on the stencil, thereby filling the holes formed in the stencil with the liquid resin and printing the liquid resin on the substrate. Since the stencil holes are formed according to the position of the semiconductor chip,
The semiconductor chip is sealed by printing.

【0005】上記印刷封止法を大気圧下で行う場合に
は、液状樹脂を孔へ充填させるためのスキージの移動時
において液状樹脂中に空気を巻き込んでしまうことは避
けられない。よって、孔内に充填された液状樹脂中には
気泡が残存する。そのため、大気圧下で印刷封止法を用
いる場合には、基板上に液状樹脂を印刷した後に、基板
を真空容器内に配置して減圧することにより液状樹脂内
に残存する気泡を除去する工程を必要としていた。
[0005] When the printing and sealing method is performed under atmospheric pressure, it is inevitable that air is entrained in the liquid resin when the squeegee moves to fill the holes with the liquid resin. Therefore, bubbles remain in the liquid resin filled in the holes. Therefore, when the printing sealing method is used under atmospheric pressure, after printing the liquid resin on the substrate, a step of removing the air bubbles remaining in the liquid resin by arranging the substrate in a vacuum container and reducing the pressure. Needed.

【0006】上記の不具合を解消するために、同出願人
は、真空雰囲気下(減圧下)において液状樹脂を印刷す
る技術を案出している。減圧下においてはスキージを移
動させても液状樹脂内に空気を巻き込むことは無いた
め、大気圧下において印刷するときの不具合は解消でき
ると考えられる。ところで、減圧下において印刷を行う
場合には、液状樹脂中にボイドが発生することが考えら
れる。ここで、ボイドとは液状樹脂中の中空部分であ
る。液状樹脂を硬化させる際に、ボイドが残存すると上
記気泡と同様に半導体素子の信頼性を低下させる虞があ
る。ここで、ボイドを消滅させる方法の一つとして、印
刷時における気圧と印刷後における気圧との差を利用す
る方法が挙げられる。つまり、減圧下で印刷した液状樹
脂内にボイドが残存していても、印刷後に大気圧にする
ことで印刷された液状樹脂に圧力を加えてボイドを消滅
させる方法である。
In order to solve the above problems, the applicant has devised a technique for printing a liquid resin under a vacuum atmosphere (under reduced pressure). Even if the squeegee is moved under reduced pressure, air does not get caught in the liquid resin, so it is considered that the problem when printing under atmospheric pressure can be solved. By the way, when printing is performed under reduced pressure, voids may be generated in the liquid resin. Here, the void is a hollow portion in the liquid resin. When voids remain when the liquid resin is cured, there is a possibility that the reliability of the semiconductor element may be reduced as in the case of the bubbles. Here, as one of the methods for eliminating the voids, there is a method using a difference between the air pressure during printing and the air pressure after printing. That is, even if voids remain in the liquid resin printed under reduced pressure, the pressure is applied to the printed liquid resin by applying atmospheric pressure after printing to eliminate the voids.

【0007】しかしながら、高密度化が要求されている
近年の半導体チップにはワイヤーが狭いピッチで高密度
に接続されており、又フリップチップの場合でも電極の
ギャップが狭くなっているため、ボイドが残存すること
が分かってきた。かかる狭ピッチのワイヤーや狭いギャ
ップに残存するボイドは、本来気圧差によりその体積を
縮小する筈であるが、液状樹脂の粘度によって液状樹脂
と板やチップとの濡れの抵抗によって、縮小できないも
のと推測される。しかも、減圧下から大気圧に戻した瞬
間にはボイド内の圧力は低い状態であるが、前述の抵抗
によって体積変化を伴わずに時間と共に常圧に近づいて
いく。従って、液状樹脂内にボイドが残存する場合にも
上述の気泡が残存する場合と同様に半導体素子の信頼性
を低下させるという問題がある。
[0007] However, in recent semiconductor chips that require high density, wires are connected at high density at a narrow pitch, and even in the case of flip chips, the gap between electrodes is narrow, so that voids are formed. It has been found to survive. Such narrow-pitch wires and voids remaining in narrow gaps are supposed to reduce their volume due to the pressure difference, but they cannot be reduced due to the wet resistance of the liquid resin to the plate or chip due to the viscosity of the liquid resin. Guessed. Moreover, at the moment when the pressure is returned from the reduced pressure to the atmospheric pressure, the pressure in the void is in a low state, but approaches the normal pressure with time without a volume change due to the above-mentioned resistance. Therefore, even when voids remain in the liquid resin, there is a problem that the reliability of the semiconductor element is reduced as in the case where the air bubbles remain.

【0008】本発明は、上記事情に鑑みてなされたもの
であり、小型の電子部品を製造する場合であっても、液
状樹脂内に気泡やボイドを残存させることなく、且つ高
い信頼性を有する電子部品を製造することができる電子
部品の製造方法及び装置を提供することを目的とする。
The present invention has been made in view of the above circumstances, and has high reliability without bubbles or voids remaining in a liquid resin even when a small electronic component is manufactured. An object of the present invention is to provide a method and an apparatus for manufacturing an electronic component capable of manufacturing an electronic component.

【0009】[0009]

【課題を解決するための手段】上記課題を解決するため
に、本発明の電子部品の製造方法は、基板に搭載された
電子部品素子を液状樹脂で封止する封止工程と、前記液
状樹脂で封止された電子部品素子を搭載する前記基板を
加圧状態とする加圧工程と、前記加圧状態で前記基板を
加熱することにより前記基板を加熱加圧状態として、前
記液状樹脂内の残存ボイドを消滅させる加熱加圧工程
と、前記基板を加熱状態として前記液状樹脂を硬化させ
る硬化工程とを有することを特徴としている。また、本
発明の電子部品の製造方法は、前記硬化工程が、前記基
板を前記加熱状態にするとともに加圧状態とした加熱加
圧状態として前記液状樹脂を硬化させることを特徴とし
ている。ここで、本発明の電子部品の製造方法は、前記
硬化工程における前記基板の加熱温度が、前記加熱加圧
工程における前記基板の加熱温度以上に設定されること
が好ましい。更には、前記加熱加圧工程における前記基
板の加熱温度が、前記液状樹脂の粘度を低下させる一次
設定温度に設定され、前記硬化工程における前記基板の
加熱温度が、前記液状樹脂がゲル化する温度以上の二次
設定温度に設定されることが好適である。また、本発明
の電子部品の製造方法は、前記封止工程が、前記基板に
搭載された電子部品素子の位置に応じて孔が形成された
孔版を用いて前記電子部品素子を封止することを特徴と
している。また、本発明の電子部品の製造方法は、前記
封止工程では、前記電子部品素子の封止を減圧下で行う
ことを特徴としている。上記課題を解決するために、本
発明の電子部品の製造装置は、基板に搭載された電子部
品素子の位置に応じて孔が形成された孔版と、当該孔版
上を摺動するスキージとを少なくとも備え、前記電子部
品素子を液状樹脂で封止する封止室と、前記封止室で前
記電子部品素子が封止された基板を加熱加圧状態とし、
前記液状樹脂に残存するボイドを消滅させるとともに、
前記液状樹脂を硬化させる加熱加圧室とを備えることを
特徴としている。ここで、前記加熱加圧室における前記
基板の加熱温度が、前記ボイドを消滅させる場合には前
記液状樹脂の粘度を低下させる一次設定温度に設定さ
れ、前記液状樹脂を硬化させる場合には前記液状樹脂が
ゲル化する温度以上の二次設定温度に設定されることを
特徴としている。更には、前記封止室が、前記基板を封
止する場合に減圧状態に設定されることを特徴としてい
る。
In order to solve the above-mentioned problems, a method of manufacturing an electronic component according to the present invention includes a sealing step of sealing an electronic component element mounted on a substrate with a liquid resin, A pressurizing step of pressurizing the substrate on which the electronic component element sealed in is mounted, and heating and pressurizing the substrate in the pressurized state to heat and pressurize the substrate; The method is characterized by comprising a heating and pressurizing step of eliminating residual voids and a curing step of curing the liquid resin while the substrate is in a heated state. Further, in the method for manufacturing an electronic component according to the present invention, the curing step includes curing the liquid resin in a heating and pressing state in which the substrate is in the heating state and in a pressing state. Here, in the electronic component manufacturing method of the present invention, it is preferable that a heating temperature of the substrate in the curing step is set to be equal to or higher than a heating temperature of the substrate in the heating and pressing step. Furthermore, the heating temperature of the substrate in the heating and pressurizing step is set to a primary set temperature that reduces the viscosity of the liquid resin, and the heating temperature of the substrate in the curing step is a temperature at which the liquid resin gels. It is preferable to set the above secondary set temperature. In the method for manufacturing an electronic component according to the present invention, the sealing step includes sealing the electronic component element using a stencil having holes formed in accordance with the position of the electronic component element mounted on the substrate. It is characterized by. In the method for manufacturing an electronic component according to the present invention, in the sealing step, the electronic component element is sealed under reduced pressure. In order to solve the above problems, an electronic component manufacturing apparatus of the present invention includes at least a stencil having holes formed in accordance with the position of an electronic component element mounted on a substrate, and a squeegee sliding on the stencil. A sealing chamber for sealing the electronic component element with a liquid resin, and a substrate in which the electronic component element is sealed in the sealing chamber is in a heating and pressing state,
While eliminating the voids remaining in the liquid resin,
A heating and pressurizing chamber for curing the liquid resin. Here, the heating temperature of the substrate in the heating and pressurizing chamber is set to a primary set temperature that reduces the viscosity of the liquid resin when the voids are eliminated, and when the liquid resin is cured, the liquid temperature is set. It is characterized in that it is set at a secondary set temperature higher than the temperature at which the resin gels. Further, the method is characterized in that the sealing chamber is set in a reduced pressure state when sealing the substrate.

【0010】[0010]

【発明の実施の形態】以下、図面を参照して本発明の一
実施形態による電子部品の製造方法及び装置について詳
細に説明する。図1は、本発明の一実施形態による電子
部品の製造方法を示すフローチャートである。図1に示
したように本発明の一実施形態による電子部品の製造方
法は、封止工程S10、加圧工程S12、加熱加圧工程
S14、及び硬化工程S16を含む。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method and an apparatus for manufacturing an electronic component according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a flowchart illustrating a method for manufacturing an electronic component according to an embodiment of the present invention. As shown in FIG. 1, the method for manufacturing an electronic component according to one embodiment of the present invention includes a sealing step S10, a pressing step S12, a heating and pressing step S14, and a curing step S16.

【0011】封止工程S10では、基板に搭載された半
導体チップ等の電子部品素子を液状樹脂で封止する。こ
の工程では液状樹脂の封止方法は特に制限はないが、例
えば、基板に搭載された電子部品素子の位置に応じて孔
が形成された孔版を用いて電子部品素子を封止すること
が好ましい。この際に、孔版上を摺動するスキージを用
いて印刷により封止することが製造効率を向上させる上
で好ましい。また、封止を行う場合には、真空雰囲気下
(減圧下)であっても大気圧下であってもよいが、液状
樹脂への気泡の混入を避ける観点からは真空下で行うこ
とが好ましい。
In a sealing step S10, an electronic component element such as a semiconductor chip mounted on a substrate is sealed with a liquid resin. In this step, the method of sealing the liquid resin is not particularly limited. For example, it is preferable to seal the electronic component element using a stencil having holes formed in accordance with the position of the electronic component element mounted on the substrate. . At this time, it is preferable to seal by printing using a squeegee that slides on the stencil in order to improve manufacturing efficiency. When the sealing is performed, the sealing may be performed under a vacuum atmosphere (under reduced pressure) or under an atmospheric pressure, but is preferably performed under vacuum from the viewpoint of avoiding mixing of bubbles into the liquid resin. .

【0012】封止工程S10が終了すると、次に加圧工
程S12が行われる。加圧工程S12は、封止された電
子部品素子が搭載された基板を加圧状態に設定する。こ
こで、電子部品素子を封止した後に加圧状態とするの
は、液状樹脂に残存する気泡の内、表面近くの気泡は液
状樹脂を加圧状態とすることで、液状樹脂の表面から除
去するためである。また、液状樹脂の表面近くのボイド
も同様に除去することができる。
When the sealing step S10 is completed, a pressure step S12 is performed next. In the pressurizing step S12, the substrate on which the sealed electronic component elements are mounted is set in a pressurized state. Here, the pressurized state after the electronic component element is sealed is that, among the bubbles remaining in the liquid resin, bubbles near the surface are removed from the liquid resin surface by pressing the liquid resin. To do that. In addition, voids near the surface of the liquid resin can be similarly removed.

【0013】次に、加熱加圧工程S14が行われる。こ
の加熱加圧工程S14は、加圧状態で基板を加熱するこ
とにより基板を加熱加圧状態として、液状樹脂内の残存
ボイドを消滅する。前述の加圧工程S12では液状樹脂
を加圧することにより、液状樹脂の表面近くの気泡又は
ボイドを除去していたが、加熱加圧工程S14では、加
圧状態を維持しながら温度を上昇させて液状樹脂の粘度
を低下させることにより、気泡又はボイドの液状樹脂中
の位置に拘わらず体積を減少させて事実上消滅させてい
る。
Next, a heating and pressing step S14 is performed. In the heating and pressurizing step S14, the substrate is heated in a pressurized state to bring the substrate into a heated and pressurized state, thereby eliminating the remaining voids in the liquid resin. In the above-described pressurizing step S12, bubbles or voids near the surface of the liquid resin were removed by pressurizing the liquid resin. In the heating and pressurizing step S14, the temperature was increased while maintaining the pressurized state. By reducing the viscosity of the liquid resin, the volume is reduced irrespective of the position of the bubbles or voids in the liquid resin, and is virtually eliminated.

【0014】ここで、液状樹脂に残存する気泡又はボイ
ドを除去することのみを考慮すると、封止工程S10を
終了した後に、直ちに加熱加圧工程S14を行えば良い
と考えられる。つまり、液状樹脂に残存する気泡又はボ
イドを除去するために、液状樹脂を加熱して粘度を低下
させ、液状樹脂の粘度が最低になった時点で加圧すれば
ボイドの体積を効率よく縮小させることができ、また気
泡を効率良く除去することができると考えられる。しか
しながら、液状樹脂は、加熱温度を徐々に上昇させてい
くと、図2に示すように、ある温度で液状樹脂の粘度が
最低となった後、急激に粘度上昇を伴った硬化反応を起
こす。図2は、加熱時間と液状樹脂の粘度変化との関係
を示す図である。図2において、符号T1〜T6を付し
た曲線は、設定温度がそれぞれ、40℃、60℃、80
℃、100℃、120℃、150℃にした場合の加熱時
間と液状樹脂の粘度変化との関係を示している。図2を
参照すると、加熱温度を上昇させるに伴い、短時間で粘
度が上昇する様子が分かる。
Here, considering only removal of bubbles or voids remaining in the liquid resin, it is considered that the heating and pressing step S14 should be performed immediately after the sealing step S10 is completed. In other words, in order to remove bubbles or voids remaining in the liquid resin, the liquid resin is heated to reduce the viscosity, and when the viscosity of the liquid resin is minimized, the pressure is reduced to efficiently reduce the volume of the void. It is considered that air bubbles can be efficiently removed. However, when the heating temperature of the liquid resin is gradually increased, as shown in FIG. 2, after the viscosity of the liquid resin reaches a minimum at a certain temperature, a curing reaction accompanied by a sharp rise in viscosity occurs. FIG. 2 is a diagram showing the relationship between the heating time and the change in viscosity of the liquid resin. In FIG. 2, curves denoted by reference symbols T1 to T6 indicate that the set temperatures are 40 ° C., 60 ° C., and 80 ° C., respectively.
It shows the relationship between the heating time and the change in viscosity of the liquid resin when the temperature is set to 100C, 100C, 120C, and 150C. Referring to FIG. 2, it can be seen that the viscosity increases in a short time as the heating temperature increases.

【0015】従って、温度を上昇させていき、液状樹脂
の粘度が最低となったタイミングで加圧すると、表面に
窪みが形成された状態で液状樹脂が増粘してゲル化して
しまうことがある。つまり、液状樹脂を加熱すると粘度
が低下し、更に加圧することで、液状樹脂の表面近くで
抜けた気泡の体積分、又は液状樹脂に残存するボイドが
押し潰されて減少した体積分だけ液状樹脂の表面が急激
に窪むことになる。この窪みは時間が経つにつれて自然
にレベリングされて平坦となるが、加熱しているが故に
レベリングされる前に液状樹脂が増粘してゲル化してし
まい窪んだままとなる。また、大気圧下で温度を上昇さ
せて液状樹脂の粘度を下げると、液状樹脂が流動しやす
くなって基板上に広がり、封止形状を留めなくなるとい
う問題も生じる。従って、本実施形態では、加圧工程S
12を経た後に加熱加圧工程S14を行っている。更
に、液状樹脂の構成成分によっては、一次設定温度で沸
点を持つものが存在する場合(例えば、粘度調整用の希
釈剤や低分子のカップリング剤、或いは酸無水物硬化剤
等)もあり、このような場合には、大気圧下で加熱する
と沸騰状態となり、そのような状態で増粘、ゲル化して
しまう虞がある。
Therefore, if the temperature is increased and pressure is applied at the timing when the viscosity of the liquid resin becomes minimum, the liquid resin may be thickened and gelled in a state where a depression is formed on the surface. . In other words, when the liquid resin is heated, the viscosity decreases, and when the liquid resin is further pressurized, the volume of bubbles that escaped near the surface of the liquid resin, or the volume remaining after the voids remaining in the liquid resin are crushed and crushed are reduced. Will be suddenly depressed. This dent is naturally leveled and flattened over time, but because of the heating, the liquid resin thickens and gels before leveling, and remains dent. Further, when the viscosity of the liquid resin is reduced by increasing the temperature under the atmospheric pressure, the liquid resin easily flows and spreads on the substrate, and there is a problem that the sealing shape cannot be maintained. Therefore, in the present embodiment, the pressing step S
After a lapse of 12, the heating and pressurizing step S14 is performed. Furthermore, depending on the constituent components of the liquid resin, there may be those having a boiling point at the primary set temperature (for example, a diluent for viscosity adjustment, a low-molecular coupling agent, or an acid anhydride curing agent). In such a case, when heated under the atmospheric pressure, a state of boiling occurs, and in such a state, there is a possibility that viscosity increases and gelation occurs.

【0016】よって、加熱加圧工程S14では、工程開
始の初期状態から加圧しておき、一次設定温度まで温度
を上げていく。この一次設定温度は、60〜120℃の
範囲であって、液状樹脂の急激な反応を起こさず緩やか
に反応が進む温度である。この一次設定温度で液状樹脂
を加熱すると、比較的長い時間液状樹脂の粘度が低くな
る状態が続く。ここで、一次設定温度が60℃よりも低
いと液状樹脂は反応を起こさないか、ゲル化するまでに
長時間を有するため好ましくない。逆に、一次設定温度
が120℃よりも高いと液状樹脂は急激に反応して、反
応に伴う硬化発熱によって発泡する場合があり、また、
粘度が十分低下する前に増粘するため好ましくない。一
次設定温度までの昇温速度はさほど重要ではないが、2
〜20℃/分程度である。2℃/分より遅いと時間的に
効率が悪く、20℃/分以上では、一次設定温度以上に
過界温しやすく制御が難しくなるため好ましくない。ま
た、加える圧力は、9.8kPa(0.1kg/c
2)〜980kPa(10kg/cm2)であり、好ま
しくは、49kPa〜490kPaである。加えるある
力を9.8kPa以下にすると、ボイドの消滅等の効果
が見い出せず、980kPa以上は設備費用が嵩むだけ
で効果に対して不必要である。尚、一次設定温度で液状
樹脂がゲル化した後は、ボイドが消滅し又は気泡が抜け
たまま押し潰されて固まっているため大気圧に戻しても
差し支えない。加熱加圧工程S14で圧力を加えておく
ことにより、液状樹脂の沸点が上昇し、一次設定温度で
沸騰することなく、又、表面状態に悪い影響を及ぼすこ
となくボイドを消滅させることができる。
Therefore, in the heating and pressurizing step S14, pressure is applied from an initial state at the start of the step, and the temperature is raised to the primary set temperature. This primary set temperature is in the range of 60 to 120 ° C., and is a temperature at which the reaction proceeds slowly without causing a rapid reaction of the liquid resin. When the liquid resin is heated at this primary set temperature, the state in which the viscosity of the liquid resin decreases for a relatively long time continues. Here, if the primary set temperature is lower than 60 ° C., the liquid resin does not cause a reaction or has a long time until gelation, which is not preferable. Conversely, if the primary set temperature is higher than 120 ° C., the liquid resin may react rapidly, and foam due to the heat generated by the curing accompanying the reaction.
It is not preferable because the viscosity increases before the viscosity sufficiently decreases. The rate of heating up to the primary set temperature is not critical,
About 20 ° C./min. If the rate is lower than 2 ° C./min, the efficiency is poor in time. If the rate is 20 ° C./min or more, the temperature is more than the primary set temperature and the control becomes difficult. The applied pressure is 9.8 kPa (0.1 kg / c
m 2 ) to 980 kPa (10 kg / cm 2 ), preferably 49 kPa to 490 kPa. If the applied force is 9.8 kPa or less, no effect such as disappearance of voids is found, and if it is 980 kPa or more, the facility cost is increased and the effect is unnecessary. After the liquid resin has gelled at the primary set temperature, the voids have disappeared, or the liquid resin has been crushed and solidified with air bubbles removed, so that the pressure may be returned to the atmospheric pressure. By applying pressure in the heating and pressurizing step S14, the boiling point of the liquid resin increases, and the voids can be eliminated without boiling at the primary set temperature and without adversely affecting the surface state.

【0017】このように、本実施形態では加圧工程S1
2において、加熱前の初期段階から液状樹脂に圧力をか
けることにより、液状樹脂の表面近くの気泡を抜き、抜
けた後の窪みをレベリングさせることができる。また、
液状樹脂に残存するボイド又は気泡を封じ込めておき、
加熱加圧工程S14において液状樹脂を加熱することに
より液状樹脂の粘度を低下させることによりボイド又は
気泡の体積を減少させて消滅させることができる。更
に、本実施形態では、液状樹脂に残存するボイドの消滅
又は気泡の除去による体積の減少分に起因する液状樹脂
表面の窪みが加熱後に加圧した場合のように急激に生ず
る訳ではないので、十分にレベリングさせることができ
る。また、液状樹脂全体に均一に圧力が加わるため、液
状樹脂の粘度が低下しても、封止形状の広がりが抑える
ことができる。
As described above, in the present embodiment, the pressing step S1
In 2, by applying pressure to the liquid resin from the initial stage before heating, bubbles near the surface of the liquid resin can be removed, and the dent after the removal can be leveled. Also,
Enclose the voids or bubbles remaining in the liquid resin,
By heating the liquid resin in the heating and pressurizing step S14 to lower the viscosity of the liquid resin, the volume of voids or bubbles can be reduced and eliminated. Furthermore, in the present embodiment, the depression on the liquid resin surface due to the disappearance of voids remaining in the liquid resin or the reduction in volume due to the removal of air bubbles does not occur suddenly as in the case of pressing after heating, It can be sufficiently leveled. Further, since pressure is uniformly applied to the entire liquid resin, even if the viscosity of the liquid resin decreases, the expansion of the sealing shape can be suppressed.

【0018】加熱加圧工程S14終了後には、硬化工程
S14が行われる。この硬化工程は、硬化した液状樹脂
の設計上の特性を引き出すために行われる工程である。
硬化工程S14では、ゲル化した液状封止樹脂を二次設
定温度まで加熱して硬化させる。この二次設定温度は1
20〜200℃である。硬化工程S14における二時設
定温度が120℃以下の場合には、十分に官能基が反応
し切れず硬化物の特性が十分とはならず、200℃以上
の場合には、成分の一部が熱による分解を起こすことが
あるため好ましくない。また、二次設定温度を200℃
以上とすると、基板や半導体チップに悪影響を及ぼすこ
とがある。この、硬化工程S16は、大気圧化で行って
もよく、また上述した加熱加圧工程S14に引き続き基
板及びゲル化した液状樹脂を加圧した状態で行ってもよ
い。
After the completion of the heating and pressing step S14, a curing step S14 is performed. This curing step is a step performed to bring out the designed characteristics of the cured liquid resin.
In the curing step S14, the gelled liquid sealing resin is cured by heating to a second set temperature. This secondary set temperature is 1
20-200 ° C. When the two-hour set temperature in the curing step S14 is 120 ° C. or lower, the functional groups cannot fully react and the properties of the cured product are not sufficient. It is not preferable because decomposition by heat may occur. Also, set the secondary temperature to 200 ° C.
The above may adversely affect the substrate and the semiconductor chip. This curing step S16 may be performed at atmospheric pressure, or may be performed in a state where the substrate and the gelled liquid resin are pressed after the above-mentioned heating and pressing step S14.

【0019】次に、上述した本発明の一実施形態による
電子部品の製造方法を行う本発明の一実施形態による電
子部品の製造装置について説明する。図3は、本発明の
一実施形態による電子部品の製造装置の構成を示す図で
ある。尚、図3に示した電子部品の製造装置は、ライン
化して電子部品を製造する際に用いて好適な電子部品の
製造装置の一例を示したものであり、封止される部品の
形態によっては必ずしも図3に示した電子部品の製造装
置を完全に備える必要はない。
Next, an apparatus for manufacturing an electronic component according to an embodiment of the present invention for performing the method for manufacturing an electronic component according to the above-described embodiment of the present invention will be described. FIG. 3 is a diagram showing a configuration of an electronic component manufacturing apparatus according to one embodiment of the present invention. The electronic component manufacturing apparatus shown in FIG. 3 is an example of an electronic component manufacturing apparatus suitable for use in manufacturing an electronic component by converting it into a line. Does not necessarily need to completely include the electronic component manufacturing apparatus shown in FIG.

【0020】図3に示したように、本発明の一実施形態
による電子部品の製造装置は、基板1を搬入する搬入室
10と、基板2を印刷する封止室としての印刷室20
と、印刷された基板3を搬出する搬出室30と、封止後
の基板4に印刷された液状樹脂に残存するボイドの消滅
及び気泡の除去並びに液状樹脂を硬化する加圧硬化炉7
0と、基板5を装置外に搬出する搬出室80とを備え
る。尚、図2中では基板に符号1〜5を付して区別して
いるが、これらには同一数の半導体チップが同一位置に
形成されている。
As shown in FIG. 3, the apparatus for manufacturing an electronic component according to one embodiment of the present invention includes a loading chamber 10 for loading the substrate 1 and a printing chamber 20 as a sealing chamber for printing the substrate 2.
And an unloading chamber 30 for unloading the printed substrate 3, and a pressure curing furnace 7 for eliminating voids remaining in the liquid resin printed on the sealed substrate 4, removing bubbles, and curing the liquid resin.
0 and an unloading chamber 80 for unloading the substrate 5 out of the apparatus. In FIG. 2, the substrates are distinguished from each other by reference numerals 1 to 5, but the same number of semiconductor chips are formed at the same positions.

【0021】搬入室10は、外部から基板を搬入する運
搬口11と、搬入した基板1を印刷室に搬出する運搬口
12を備える。運搬口12によって搬入室10内部と印
刷室20内部とが貫通している。また、この搬入室10
は封止前の基板1の真空乾燥を行うための乾燥室として
も兼用される。搬出室30は、印刷室20から基板2を
搬入する運搬口31と封止後の基板3を加圧硬化炉70
へ搬出する運搬口32とを備える。運搬口31によって
搬出室30内部と印刷室20内部とが貫通している。
The loading chamber 10 has a transport port 11 for loading a substrate from the outside and a transport port 12 for transporting the loaded substrate 1 to the printing room. The inside of the carry-in room 10 and the inside of the printing room 20 pass through the carrying port 12. In addition, this loading room 10
Is also used as a drying chamber for performing vacuum drying of the substrate 1 before sealing. The unloading chamber 30 is provided with a transfer port 31 for loading the substrate 2 from the printing chamber 20 and the sealed substrate 3 into a pressure curing furnace 70.
And a carry-out port 32 for carrying out. The inside of the carry-out room 30 and the inside of the printing room 20 penetrate through the carrying port 31.

【0022】運搬口11には、外部と搬入室10とを遮
断(分離)又は開放するための開閉扉13が設けられ、
運搬口12には、搬入室10と印刷室20とを遮断(分
離)又は開放するための開閉扉14が設けられる。ま
た、運搬口31には、印刷室20と搬出室30とを遮断
(分離)又は開放するための開閉扉33が設けられ、運
搬口32には、搬出30と加圧硬化炉70とを遮断(分
離)又は開放するための開閉扉34が設けられる。ま
た、加圧硬化炉70と搬出室80との間には開閉扉35
が設けられ、搬出室80には開閉扉36が設けられる。
開閉扉13,14,33,34,35,36は、内外部
の気圧差に耐えられる構造となっている。例えば気密性
を保持できるシーリングが施されている。開閉扉13,
14,33,34,35,36が閉状態である場合、搬
入室10、印刷室20、搬出室30、加圧硬化炉70、
及び搬出室80は密封され、気密性を保持できる。本実
施形態では、上述のように搬入室10を真空乾燥室とし
て兼用しており、この搬入室が基板1の湿気や残存揮発
性物質を除去するために用いられるので、0.1tor
r程度の真空度に耐える耐圧構造とすることが好まし
い。
An opening / closing door 13 for shutting off (separating) or opening the outside and the loading room 10 is provided at the transport opening 11.
The transport opening 12 is provided with an opening / closing door 14 for shutting off (separating) or opening the carry-in room 10 and the printing room 20. Further, an opening / closing door 33 for shutting off (separating) or opening the printing room 20 and the unloading chamber 30 is provided at the transport opening 31, and the unloading 30 and the pressure curing furnace 70 are shut off at the transport opening 32. An opening / closing door 34 for (separation) or opening is provided. An opening / closing door 35 is provided between the pressure curing furnace 70 and the unloading chamber 80.
The opening / closing door 36 is provided in the carry-out room 80.
The opening / closing doors 13, 14, 33, 34, 35, 36 have a structure that can withstand a pressure difference between the inside and the outside. For example, sealing that can maintain airtightness is provided. Door 13,
When 14, 33, 34, 35, and 36 are in the closed state, the carry-in room 10, the printing room 20, the carry-out room 30, the pressure curing furnace 70,
And the carry-out room 80 is sealed and can maintain airtightness. In the present embodiment, as described above, the loading chamber 10 is also used as a vacuum drying chamber, and since this loading chamber is used for removing moisture and remaining volatile substances of the substrate 1, 0.1 torr is used.
It is preferable to have a pressure-resistant structure that can withstand a degree of vacuum of about r.

【0023】また、搬入室10、印刷室20、搬出室3
0、加圧硬化炉70、及び搬出室80内、及び装置の外
部には基板を搬送するためのベルトコンベア40,4
1,42,43,44、45,46が一直線状に配置さ
れ、基板1,2,3、4,5を搬送する。尚、上記基板
1,2,3,4,5は基板そのものではなく、例えば基
板を載置した治具板であってもよい。また、ベルトコン
ベア40,41,42,43,44、45,46は、例
えばローラ回転機構を備えた送り装置であってもよい。
尚、基板としては、液状樹脂が充填される孔を有する基
板、液状樹脂で封止される半導体が搭載された基板、液
状樹脂で封止される電子部品等がある。
The loading room 10, the printing room 20, and the unloading room 3
0, a belt conveyer 40, 4 for transporting substrates in the pressure curing furnace 70, the unloading chamber 80, and outside the apparatus.
1, 42, 43, 44, 45, and 46 are arranged in a straight line, and transport the substrates 1, 2, 3, 4, and 5. Note that the substrates 1, 2, 3, 4, and 5 are not the substrates themselves, but may be, for example, a jig plate on which the substrates are placed. Further, the belt conveyors 40, 41, 42, 43, 44, 45, 46 may be, for example, a feeding device provided with a roller rotating mechanism.
The substrate includes a substrate having a hole filled with a liquid resin, a substrate on which a semiconductor sealed with the liquid resin is mounted, an electronic component sealed with the liquid resin, and the like.

【0024】前述した搬入室10、印刷室20、搬出室
30、及び搬出室80にはバルブ53を備えた吸気管5
0、バルブ54を備えた吸気管51、バルブ55を備え
た吸気管52、バルブ82を備えた吸気管81がそれぞ
れ備えられている。搬入室10、印刷室20、搬出室3
0、及び搬出室80が真空状態にある場合、バルブ5
3,54,55,82を開状態とすることで、搬入室1
0、印刷室20、搬出室30、及び搬出室80内部の気
圧を大気圧とすることができる。また、搬入室10、印
刷室20、及び搬出室30には、バルブ57,58,5
9が設けられ、真空ポンプ60に接続された配管56が
接続されてる。よって、真空ポンプ60が稼働状態であ
る場合に、バルブ57,58,59を開状態とすること
で、搬入室10、印刷室20、及び搬出室30それぞれ
を真空状態とすることができる。よってバルブ53,5
4,55,57,58,59の開度を調整することで搬
入室10、印刷室20、及び搬出室30内の真空度を任
意に設定することができる。
The above-described carry-in room 10, printing room 20, carry-out room 30, and carry-out room 80 have an intake pipe 5 provided with a valve 53.
0, an intake pipe 51 with a valve 54, an intake pipe 52 with a valve 55, and an intake pipe 81 with a valve 82, respectively. Loading room 10, printing room 20, loading room 3
0, and when the discharge chamber 80 is in a vacuum state, the valve 5
By opening 3, 54, 55, and 82, the loading room 1
0, the pressure inside the printing room 20, the unloading room 30, and the unloading room 80 can be set to the atmospheric pressure. Also, valves 57, 58, and 5 are provided in the carry-in room 10, the printing room 20, and the carry-out room 30.
9 is provided, and a pipe 56 connected to the vacuum pump 60 is connected. Therefore, when the vacuum pump 60 is in the operating state, by opening the valves 57, 58, and 59, each of the loading chamber 10, the printing chamber 20, and the unloading chamber 30 can be in a vacuum state. Therefore, valves 53 and 5
The degree of vacuum in the carry-in room 10, the print room 20, and the carry-out room 30 can be arbitrarily set by adjusting the opening degrees of 4, 55, 57, 58, and 59.

【0025】特に、搬入室10は真空乾燥を行うために
も用いられているため、搬入室10の真空度を任意に設
定できることは好適である。尚、図3では、真空ポンプ
60がバルブ57,58,59を介して直接搬入室1
0、印刷室20、及び搬出室30に接続されているが、
必要に応じて搬入室10、印刷室20、及び搬出室30
と真空ポンプ60との間にタンクを設けて所定の真空度
に到達するまでの時間短縮を図ってもよい。また、搬出
室30及び加圧硬化炉70には、バルブ55,92が設
けられ、コンプレッサ90に接続された配管52,91
がそれぞれ接続されてる。尚、コンプレッサ90に代え
て窒素ガスが封入された窒素ボンベを設けても良い。バ
ルブ55,92を開状態とすることで、搬出室30及び
加圧硬化炉70内の圧力各々を大気圧以上に調整するこ
とができる。加圧硬化炉70内には、基板4の移動方向
に沿って所定間隔で間仕切り77が設けられている。こ
の間仕切り77は、主として開閉扉34,35の開閉に
伴う加圧硬化炉70内の急激な温度変動を緩和するため
に設けられる。また、加圧硬化炉70内にはヒーターブ
ロック72が設けられている。このヒーターブロック7
2は、加圧乾燥炉70の上、下、左、右、上下、左右、
又は周囲に設けられる。尚、コンプレッサ90から加圧
乾燥炉70に通じる配管に熱源を取り付け、所定の温度
に加熱された気体を加圧乾燥炉70内へ導入するように
してもよい。また、ヒーターブロック72を分割してブ
ロック化し、各々のブロックで所定の温度となるように
制御しても良い。このように、本実施形態では、加圧硬
化炉70内の基板4に加える圧力はバルブ92の開閉に
よって調整され、温度はヒーターブロック72による温
度制御により調整される。
In particular, since the loading chamber 10 is also used for vacuum drying, it is preferable that the degree of vacuum of the loading chamber 10 can be arbitrarily set. In FIG. 3, the vacuum pump 60 is directly connected to the loading chamber 1 via the valves 57, 58, 59.
0, connected to the printing room 20, and the unloading room 30,
Loading room 10, printing room 20, and unloading room 30 as required
A tank may be provided between the pump and the vacuum pump 60 to reduce the time required to reach a predetermined degree of vacuum. Further, valves 55 and 92 are provided in the discharge chamber 30 and the pressure curing furnace 70, and pipes 52 and 91 connected to the compressor 90 are provided.
Are connected respectively. Note that a nitrogen cylinder filled with nitrogen gas may be provided instead of the compressor 90. By opening the valves 55 and 92, the pressure in the discharge chamber 30 and the pressure in the pressure curing furnace 70 can be adjusted to atmospheric pressure or higher. In the pressure curing furnace 70, partitions 77 are provided at predetermined intervals along the moving direction of the substrate 4. The partition 77 is provided mainly for alleviating a rapid temperature change in the pressure curing furnace 70 due to the opening and closing of the doors 34 and 35. Further, a heater block 72 is provided in the pressure curing furnace 70. This heater block 7
2, upper, lower, left, right, up, down, left, right,
Or it is provided around. Note that a heat source may be attached to a pipe leading from the compressor 90 to the pressure drying furnace 70, and a gas heated to a predetermined temperature may be introduced into the pressure drying furnace 70. Further, the heater block 72 may be divided into blocks, and control may be performed such that each block has a predetermined temperature. As described above, in this embodiment, the pressure applied to the substrate 4 in the pressure curing furnace 70 is adjusted by opening and closing the valve 92, and the temperature is adjusted by temperature control by the heater block 72.

【0026】次に、印刷室20の内部について詳細に説
明する。図3において、21は、後述するテーブル22
の昇降及び静止を行うテーブル昇降装置であり、必要に
応じて昇降速度及び任意の位置で任意の時間静止できる
機能を備えていても良い。また、テーブル昇降装置21
の代わりに印刷孔版を昇降させる装置を用いることも可
能である。この場合においても上記機構を備えることが
可能である。22は印刷機のテーブルであり、基板2が
治具板に搭載されている場合、又は基板自体を搬送する
際には特に必要としない。また、必要に応じて基板2加
温できるようにヒータ(図示せず)を内蔵したり、又は
テーブル上面にヒータを設置しても良い。23は印刷用
の孔版であり、基板2の樹脂供給部分に対応する位置に
供給寸法に対応した大きさ及び形状の孔が、供給部に対
応する数で設けられている。図3においては、孔23
a,23b,23cが設けられている。24はスキージ
移動装置であり、印刷室20内に水平に設置された移動
レール25に沿って図中符号H1が付された方向又は符
号H2が付された方向に往復運動可能に構成され、スキ
ージ26a,26bを符号、H1が付された方向又は符
号H2が付された方向に往復運動させる。また、スキー
ジ移動装置24は、スキージ26a,26bを符号V1
が付された方向又は符号V2が付された方向に往復運動
させ、スキージ16a,26bの垂直位置の調整を行う
とともに、スキージ26a,26bと孔版23との距離
の調整と接触圧の調整とを行うものである。
Next, the inside of the printing room 20 will be described in detail. In FIG. 3, reference numeral 21 denotes a table 22 described later.
It is a table elevating device that moves up and down and stands still, and may have a function of being able to stand still at an elevating speed and an arbitrary position for an arbitrary time if necessary. Also, the table elevating device 21
It is also possible to use a device for raising and lowering the printing stencil instead of. In this case, the above mechanism can be provided. Reference numeral 22 denotes a table of the printing press, which is not particularly necessary when the substrate 2 is mounted on a jig plate or when the substrate itself is transported. Further, a heater (not shown) may be built in so that the substrate 2 can be heated as needed, or a heater may be provided on the upper surface of the table. Reference numeral 23 denotes a stencil plate for printing, and a number of holes having a size and a shape corresponding to the supply size are provided at positions corresponding to the resin supply portion of the substrate 2 in a number corresponding to the supply portion. In FIG.
a, 23b and 23c are provided. Reference numeral 24 denotes a squeegee moving device, which is configured to be able to reciprocate in a direction indicated by reference numeral H1 or a direction indicated by reference numeral H2 along a moving rail 25 installed horizontally in the printing room 20. 26a and 26b are reciprocated in the direction indicated by reference numeral H1 or in the direction indicated by reference numeral H2. In addition, the squeegee moving device 24 designates the squeegees 26a and 26b with a code V1.
The vertical position of the squeegees 16a and 26b is adjusted by reciprocating the squeegees 16a and 26b, and the adjustment of the distance between the squeegees 26a and 26b and the stencil 23 and the adjustment of the contact pressure are performed. Is what you do.

【0027】次に、スキージ26a,26bと孔版23
との関係について説明する。スキージ26a,26bと
孔版23との接触角θは、基板の孔部へ液状樹脂を押し
込み充填するために90゜より小さい角度にした方が好
ましい。つまり、スキージ26a,26bの先端が鋭角
でなく90°に近い場合には、スキージ26a,26b
自体を傾斜させて接触角θを90°以下にする必要があ
る。また、スキージ26a,26bの先端が鋭角である
場合には、スキージ26a,26bは垂直に配置されて
いても接触角θが90°以下になる。本実施形態におい
ては、印刷はスキージ移動装置24が図中符号H1が付
された方向へ移動する場合と、符号H2が付された方向
へ移動する場合との両方においてなされるため、2本の
スキージ26a,26bが対向して設けられている。
Next, the squeegees 26a and 26b and the stencil 23
Will be described. The contact angle θ between the squeegees 26a and 26b and the stencil 23 is preferably set to an angle smaller than 90 ° in order to press and fill the hole of the substrate with the liquid resin. That is, when the tips of the squeegees 26a, 26b are not acute angles but close to 90 °, the squeegees 26a, 26b
It is necessary to make the contact angle θ 90 ° or less by tilting itself. When the tips of the squeegees 26a and 26b are acute angles, the contact angle θ is 90 ° or less even if the squeegees 26a and 26b are vertically arranged. In the present embodiment, printing is performed in both the case where the squeegee moving device 24 moves in the direction indicated by reference numeral H1 and the case where the squeegee moving device 24 moves in the direction indicated by reference numeral H2. Squeegees 26a and 26b are provided to face each other.

【0028】27は、印刷室20内の孔版23上へ適宜
液状樹脂を供給するための樹脂供給装置であり、印刷室
20の外部において樹脂供給装置に液状樹脂が補充され
るものである。この装置は必要に応じて液状樹脂を加温
できるように加温装置(図示せず)を装備してもよい。
また、樹脂供給装置27は、印刷室20外部に設けられ
ているが、これは液状樹脂の供給は構造上必ず印刷室内
の孔版上に供給する必要があり、当該印刷室が常時真空
に近い状態であるため、印刷室外部において補充し、印
刷室20内に送り込む樹脂供給が必要となるからであ
る。28は、樹脂供給装置27に接続された樹脂供給ノ
ズルであり、樹脂供給装置27から孔版23上へ液状樹
脂を吐出する部分であって、必要に応じて液状樹脂を加
温できる構成となっていてもよい。
Reference numeral 27 denotes a resin supply device for appropriately supplying a liquid resin onto the stencil 23 in the printing room 20. The resin supply device is supplied outside the printing room 20 to the resin supply device. This device may be equipped with a heating device (not shown) so that the liquid resin can be heated as necessary.
Further, the resin supply device 27 is provided outside the printing room 20, but it is necessary to supply the liquid resin to the stencil inside the printing room due to its structure. Therefore, it is necessary to supply a resin that is replenished outside the printing room and sent into the printing room 20. Reference numeral 28 denotes a resin supply nozzle connected to the resin supply device 27, which is a portion for discharging the liquid resin from the resin supply device 27 onto the stencil 23, and has a configuration capable of heating the liquid resin as necessary. You may.

【0029】尚、樹脂供給ノズル28は、スキージ26
aとスキージ26bとの間に複数個設けられていてもよ
い。また、樹脂供給ノズル28を移動可能な構成として
もよい。この場合、スキージ26a,26bが図3中符
号H1が付された方向移動し、元の位置に帰還するまで
の間に、樹脂供給ノズル28がスキージ26a,26b
の移動範囲外から移動してきてスキージの前面に位置す
る孔版23上に液状樹脂を吐出した後、スキージ26
a,26bの移動範囲外の元の位置に帰還するようにな
る。図3中29は孔版23上に樹脂供給ノズル28から
吐出された液状樹脂である。吐出される位置は前進する
スキージ26a,6bの前方に位置する孔版23の上で
ある。
Incidentally, the resin supply nozzle 28 is
A plurality may be provided between the squeegee 26a and the squeegee 26b. Further, the resin supply nozzle 28 may be configured to be movable. In this case, before the squeegees 26a and 26b move in the direction indicated by reference numeral H1 in FIG. 3 and return to their original positions, the resin supply nozzles 28 become squeegees 26a and 26b.
After moving from outside the moving range of the squeegee and discharging the liquid resin onto the stencil 23 located in front of the squeegee, the squeegee 26
a, 26b is returned to the original position outside the moving range. In FIG. 3, reference numeral 29 denotes a liquid resin discharged from the resin supply nozzle 28 onto the stencil 23. The discharge position is on the stencil 23 located in front of the squeegees 26a and 6b that are moving forward.

【0030】次に、本発明の一実施形態による電子部品
の製造装置の動作について説明する。まず、搬入室10
に関して開閉扉14を閉状態とし、開閉扉13を開状態
とし、搬出室30に関して開閉扉34を閉状態とし、開
閉扉33を開状態とする。また、加圧硬化炉70及び搬
出室80に関して開閉扉35,36を閉状態とする。更
に、真空ポンプ60を稼働し、バルブ53,58,59
は開状態とし、バルブ54,55,57を閉状態とす
る。このようにすることで、搬入室10内の圧力を大気
圧とし、印刷室20及び搬出室30を所定の真空度に調
整する。尚、バルブ82は閉状態、バルブ92は開状態
としておく。
Next, the operation of the electronic component manufacturing apparatus according to one embodiment of the present invention will be described. First, the loading room 10
, The open / close door 14 is closed, the open / close door 13 is open, the open / close door 34 is closed with respect to the carry-out room 30, and the open / close door 33 is open. Further, the open / close doors 35 and 36 of the pressure curing furnace 70 and the carry-out chamber 80 are closed. Further, the vacuum pump 60 is operated, and the valves 53, 58, 59
Is open, and the valves 54, 55, 57 are closed. By doing so, the pressure in the loading chamber 10 is set to the atmospheric pressure, and the printing chamber 20 and the unloading chamber 30 are adjusted to a predetermined degree of vacuum. The valve 82 is closed and the valve 92 is open.

【0031】この状態で、ベルトコンベア40,41を
稼働し、基板1を運搬口11を介して搬入室10内部へ
搬入する。次に、開閉扉13を閉状態とし、バルブ53
を閉状態にするとともにバルブ57を開状態として真空
ポンプ60の稼働により搬入室10の内部気圧を印刷室
20の内部気圧と同等にする。尚、真空室10は真空乾
燥室として用いられるため、乾燥時間短縮の観点から印
刷室20よりも高い真空度に設定しても良い。
In this state, the belt conveyors 40 and 41 are operated, and the substrate 1 is carried into the carry-in room 10 through the carrying port 11. Next, the door 13 is closed, and the valve 53 is closed.
Is closed and the valve 57 is opened to operate the vacuum pump 60 to make the internal pressure of the carry-in chamber 10 equal to the internal pressure of the printing chamber 20. Since the vacuum chamber 10 is used as a vacuum drying chamber, the degree of vacuum may be set higher than that of the printing chamber 20 from the viewpoint of shortening the drying time.

【0032】搬入室10の内部気圧が印刷室20の内部
気圧と同等になった後、開閉扉14を開状態とし、ベル
トコンベア41,42を駆動して基板1を印刷室20内
部に搬入する。基板1がベルトコンベア42によって移
動し、テーブル昇降装置21上の所定の位置に達する
と、テーブル昇降装置21がテーブル22を上昇させ基
板1を所定の位置、つまり基板2の上面が印刷孔版23
の裏面に接触する位置まで上昇させる。基板2が上記所
定の位置まで上昇すると、樹脂供給位置27は孔版23
上のスキージ26b前方、つまりスキージ26bに対し
て符号H1が付された方向に液状樹脂29を吐出する。
液状樹脂29が吐出されると、スキージ移動装置24
は、孔版23に接触するまでスキージ26bを下降さ
せ、スキージ26bが孔版23に接触してから、図中符
号H1が付された方向へ移動し、印刷を開始する。スキ
ージ26bが移動することにより、液状樹脂29が孔版
23に形成された孔23a〜23c中に充填される。
After the internal pressure of the loading chamber 10 becomes equal to the internal pressure of the printing chamber 20, the opening and closing door 14 is opened, and the belt conveyors 41 and 42 are driven to transport the substrate 1 into the printing chamber 20. . When the substrate 1 is moved by the belt conveyor 42 and reaches a predetermined position on the table elevating device 21, the table elevating device 21 raises the table 22 to move the substrate 1 to a predetermined position, that is, the upper surface of the substrate 2
Up to the position where it contacts the back surface of When the substrate 2 rises to the above-mentioned predetermined position, the resin supply position 27 becomes the stencil 23
The liquid resin 29 is discharged in front of the upper squeegee 26b, that is, in the direction indicated by reference numeral H1 with respect to the squeegee 26b.
When the liquid resin 29 is discharged, the squeegee moving device 24
Lowers the squeegee 26b until it comes into contact with the stencil 23, and after the squeegee 26b comes into contact with the stencil 23, moves in the direction indicated by reference numeral H1 in the figure, and starts printing. As the squeegee 26b moves, the liquid resin 29 fills the holes 23a to 23c formed in the stencil 23.

【0033】往路印刷(スキージ26bを図中符号H1
が付された方向へ移動させた場合の印刷)終了後から復
路印刷(スキージ26aを図中符号H2が付された方向
へ移動させた場合の印刷)の印刷開始までの間に印刷室
20内の真空度を往路印刷時の真空度よりも30tor
r以上、所定の真空度までに降下させる。尚、10to
rr程度より高い真空度や10torrに満たない真空
度で印刷した場合、液状樹脂中の気泡が抜けきらないこ
とがある、例えば孔内、素子周縁、コイルの線間などに
液状樹脂未充填部が残り、これら気泡や未充填部は10
torrに満たない真空度の空気の残存部分であって、
真空解除後(常圧に戻した後)にも数ミリ程度の空気の
残存した空隙となる。この意味から好ましくは5tor
rより高く、特に好ましくは1torr程度までに真空
度を高めたほうが良い。その後、印刷室20内の真空度
を往路印刷時の真空度を超えない所定の真空度に調整、
保持する。これは、バルブ54の開閉によって調整す
る。上記真空度の調整を行っている間、スキージ26b
を上昇させるとともにスキージ26a下降させておく。
Forward printing (the squeegee 26b is denoted by reference numeral H1 in the drawing).
In the printing room 20 after the end of the return pass printing (printing in the case where the squeegee 26a is moved in the direction indicated by the symbol H2 in the figure) after the end of the printing when the printing is performed in the direction marked with. The vacuum degree is 30 torr higher than the vacuum degree during forward printing.
At least r, the pressure is lowered to a predetermined degree of vacuum. In addition, 10to
When printing with a degree of vacuum higher than about rr or a degree of vacuum less than 10 torr, bubbles in the liquid resin may not be completely removed. For example, the liquid resin unfilled portion may be in a hole, an element periphery, a coil line, or the like. Remaining, these bubbles and unfilled parts are 10
the remaining portion of air having a vacuum less than torr,
Even after the vacuum is released (after the pressure is returned to normal pressure), a gap in which air of about several millimeters remains remains. In this sense, preferably 5 torr
r, and it is particularly preferable to increase the degree of vacuum to about 1 torr. Thereafter, the degree of vacuum in the printing room 20 is adjusted to a predetermined degree of vacuum that does not exceed the degree of vacuum during forward printing,
Hold. This is adjusted by opening and closing the valve 54. While adjusting the degree of vacuum, the squeegee 26b
Is raised and the squeegee 26a is lowered.

【0034】続いて復路印刷をスキージ26aを用いて
行う。このようにして、図1に示した封止工程S10が
行われる。復路の印刷終了後、テーブル昇降装置21に
よりテーブル22を降下させ、基板2を孔版23から離
脱させる。この際、液状樹脂のいとぎれによる形状不具
合を防止するために、テーブル22の下降速度の調整又
は任意位置での静止時間の調整を行う。次に、開閉扉3
3を開状態とする。そして、テーブル22が下降し、基
板2がベルトコンベア42上に載置されると、ベルトコ
ンベア42,43が駆動し、基板1を印刷室20から搬
出室30へ搬入する。搬出室30への搬入が完了する
と、開閉扉33を閉状態とし、バルブ59を閉状態にす
るとともに、バルブ55を開状態として搬出室30内の
圧力を加圧硬化炉70内の圧力と同程度に加圧する。搬
出室30の圧力が加圧硬化炉70と同程度になった後、
開閉扉34を開状態とし、ベルトコンベア43,44を
駆動して基板3を加圧硬化炉70内に搬入する。従っ
て、搬出室30内が加圧硬化炉70と同程度に加圧され
た時点において、図1に示す加圧工程S12が行われ
る。
Subsequently, the backward printing is performed using the squeegee 26a. Thus, the sealing step S10 shown in FIG. 1 is performed. After the return printing, the table 22 is moved down by the table elevating device 21 to release the substrate 2 from the stencil 23. At this time, the lowering speed of the table 22 or the resting time at an arbitrary position is adjusted in order to prevent a shape defect due to a break in the liquid resin. Next, the door 3
3 is opened. Then, when the table 22 is lowered and the substrate 2 is placed on the belt conveyor 42, the belt conveyors 42 and 43 are driven, and the substrate 1 is carried from the printing room 20 to the carry-out room 30. When the loading into the unloading chamber 30 is completed, the opening and closing door 33 is closed, the valve 59 is closed, and the valve 55 is opened so that the pressure in the unloading chamber 30 is the same as the pressure in the pressure curing furnace 70. Press to about. After the pressure in the unloading chamber 30 becomes approximately the same as the pressure curing furnace 70,
The opening and closing door 34 is opened, and the belt conveyors 43 and 44 are driven to carry the substrate 3 into the pressure curing furnace 70. Therefore, when the inside of the unloading chamber 30 is pressurized to the same degree as the pressure hardening furnace 70, the pressurizing step S12 shown in FIG. 1 is performed.

【0035】基板3が加圧乾燥炉70内に搬入される
と、ヒーターブロック72を加熱することにより、基板
4が加熱加圧状態となる。尚、加圧乾燥炉70内の圧力
は、コンプレッサ90からの配管91に設けられたバル
ブ92の開閉によって制御される。加圧乾燥炉70内に
基板4が配置されている状態で、加圧乾燥炉70内の温
度を一次設定温度に設定し、印刷された液状樹脂の粘度
を低下させて残存するボイドを消滅させ又は気泡を除去
し、その後液状樹脂がゲル化下した後、加圧状態を維持
したまま加圧乾燥炉70内の温度を二次設定温度に設定
し、ゲル状の液状樹脂を硬化させる。このようにして、
加圧乾燥炉70内において図1に示した加熱化工程S1
4及び硬化工程S16が順に行われる。尚、加圧乾燥炉
70内において、基板4の搬送方向に沿って徐々に温度
が高くなる温度分布を形成しておき、ベルトコンベア4
4の速度制御によって、熱化工程S14及び硬化工程S
16を順に行うことが製造効率を高める上で好ましい。
液状樹脂を硬化させた後、開閉扉35を開状態として、
基板4は搬出室80へ搬出し、バルブ82を開状態とし
て搬出室80内を大気圧に戻した後に開閉扉36を開状
態として、ベルトコンベア46で基板5を外部に搬出す
る。複数枚の基板を処理する場合には、以上の工程が繰
り返し行われる。
When the substrate 3 is carried into the pressure drying furnace 70, the substrate 4 is heated and pressed by heating the heater block 72. The pressure in the pressure drying oven 70 is controlled by opening and closing a valve 92 provided on a pipe 91 from the compressor 90. While the substrate 4 is placed in the pressure drying oven 70, the temperature in the pressure drying oven 70 is set to a primary set temperature, the viscosity of the printed liquid resin is reduced, and the remaining voids are eliminated. Alternatively, after the bubbles are removed and the liquid resin gelates, the temperature in the pressure drying oven 70 is set to the secondary set temperature while maintaining the pressurized state, and the gel liquid resin is cured. In this way,
Heating step S1 shown in FIG.
4 and a curing step S16 are sequentially performed. In the pressure drying oven 70, a temperature distribution is formed in which the temperature gradually increases along the transport direction of the substrate 4, and the belt conveyor 4
By the speed control of No. 4, the thermalizing step S14 and the curing step S
It is preferable to perform Step 16 in order from the viewpoint of increasing the manufacturing efficiency.
After curing the liquid resin, the opening / closing door 35 is opened,
The substrate 4 is carried out to the carry-out room 80, the valve 82 is opened, and the inside of the carry-out room 80 is returned to the atmospheric pressure. Then, the open / close door 36 is opened, and the substrate 5 is carried out by the belt conveyor 46 to the outside. When processing a plurality of substrates, the above steps are repeatedly performed.

【0036】[0036]

【実施例】本出願人は、上述の電子部品の製造方法を用
いて、種々の形態の電子部品を製造した。図4は、実際
に製造した電子部品の形態を示す上面図及び断面図であ
る。図4(a)、図4(b)はCOB(チップ・オン・
ボード)の形態の電子部品、図4(c)はWBGA(ウ
インドウ・ボール・グリッド・アレイ)の形態の電子部
品、図4(d)はBGA(ボール・グリッド・アレイ)
の形態の電子部品、図4(e)は、フリップチップの形
態の電子部品をそれぞれ示している。尚、図4(a)〜
図4(e)において、符号100を付した部材は基板で
あり、符号101を付した部材は半導体チップである。
また、図4(a)〜図4(d)において、符号102を
付した部材は基板100と半導体チップ102とを電気
的に接続するワイヤーであり、図4(e)において、符
号103を付した部材は、基板100と半導体チップ1
02とを電気的に接続するバンプである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present applicant manufactured various types of electronic components by using the above-described electronic component manufacturing method. FIG. 4 is a top view and a cross-sectional view showing the form of an actually manufactured electronic component. FIGS. 4A and 4B show COB (chip-on-chip).
4 (c) is an electronic component in the form of a WBGA (window ball grid array), and FIG. 4 (d) is an electronic component in the form of a BGA (ball grid array).
FIG. 4E shows an electronic component in the form of a flip chip. In addition, FIG.
In FIG. 4E, a member denoted by reference numeral 100 is a substrate, and a member denoted by reference numeral 101 is a semiconductor chip.
4 (a) to 4 (d), a member denoted by reference numeral 102 is a wire for electrically connecting the substrate 100 and the semiconductor chip 102, and a member denoted by reference numeral 103 in FIG. 4 (e). The completed member is the substrate 100 and the semiconductor chip 1
02 are electrically connected to the bumps.

【0037】各電子部品の形態の詳細は以下の通りであ
る。基板100は、FR−4(商品名:CS−335
5,利昌工業株式会社製)を用い、回路パターンが形成
されている。 (a)COB(チップ・オン・ボード) ワイヤー(φ25μmの金線) ワイヤー本数:4本 ワイヤーピッチ:2mm (b)COB(チップ・オン・ボード) ワイヤー(φ25μmの金線) ワイヤー本数:256本 ワイヤーピッチ:62μm チップサイズ:5×5mm チップ厚み:600μm (c)WBGA(ウインドウ・ボール・グリッド・アレ
イ) ワイヤー(φ25μmの金線) ワイヤー本数:60本 ワイヤーピッチ:130μm チップサイズ:6×12mm チップ厚み:400μm (d)BGA(ボール・グリッド・アレイ) ワイヤー(φ25μmの金線) ワイヤー本数:504本 ワイヤーピッチ:60μm チップサイズ:10×10mm チップ厚み:400μm (e)フリップチップ バンプ数:256 ワイヤー本数:504本 バンプ高さ:25μm チップサイズ:10×10mm チップ厚み:600μm
The details of the form of each electronic component are as follows. The substrate 100 is made of FR-4 (trade name: CS-335).
5, manufactured by Risho Kogyo Co., Ltd.). (A) COB (chip-on-board) wire (φ25 μm gold wire) Number of wires: 4 Wire pitch: 2 mm (b) COB (chip-on-board) wire (φ25 μm gold wire) Number of wires: 256 Wire pitch: 62 μm Chip size: 5 × 5 mm Chip thickness: 600 μm (c) WBGA (Window ball grid array) Wire (φ25 μm gold wire) Number of wires: 60 Wire pitch: 130 μm Chip size: 6 × 12 mm chip Thickness: 400 μm (d) BGA (ball grid array) wire (φ25 μm gold wire) Number of wires: 504 Wire pitch: 60 μm Chip size: 10 × 10 mm Chip thickness: 400 μm (e) Flip chip Number of bumps: 256 wires Number: 504 pieces Flop Height: 25 [mu] m chip size: 10 × 10 mm chip thickness: 600 .mu.m

【0038】また、液状樹脂を印刷する際に用いる孔版
は、基板に搭載された半導体チップの位置に孔を形成
し、その径は半導体チップの外形寸法に応じて設定し
た。また、封止厚みに対応する厚みのSUS板を用い
た。液状樹脂は、NPR−700(商品名:日本レック
株式会社製)を用いた。上記の形態の電子部品を以下の
条件で製造した。以下の比較例1〜比較例3は、本実施
例を用いた場合と用いない場合との効果を比較するため
に行った例であり、図1に示す加圧工程S12及び加熱
加圧工程S14を順に経ていない。比較例1〜比較例3
及び実施例1〜実施例4の工程の詳細は以下の通りであ
る。
In the stencil used for printing the liquid resin, holes were formed at the positions of the semiconductor chips mounted on the substrate, and the diameter was set according to the external dimensions of the semiconductor chips. Further, a SUS plate having a thickness corresponding to the sealing thickness was used. As the liquid resin, NPR-700 (trade name, manufactured by Nippon Rec Co., Ltd.) was used. The electronic component of the above embodiment was manufactured under the following conditions. The following Comparative Examples 1 to 3 are examples performed to compare the effects of the case of using the present embodiment and the case of not using the present embodiment, and include a pressing step S12 and a heating / pressing step S14 shown in FIG. Not in order. Comparative Example 1 to Comparative Example 3
The details of the steps of Examples 1 to 4 are as follows.

【0039】(比較例1)印刷封止は常圧で行い、その
まま、100℃/1時間+150℃/3時間加熱加熱し
て硬化した。 (比較例2)印刷封止は真空(0.13kPa)下で行
い、常圧に戻してから、100℃/1時間+150℃/
3時間加熱して硬化した。 (比較例3)印刷封止は真空(0.13kPa)下で行
い、常圧に戻してから、100℃/1時間+150℃/
3時間加熱して硬化した。
(Comparative Example 1) Printing and sealing were carried out at normal pressure, and they were cured by heating and heating as they were at 100 ° C for 1 hour + 150 ° C for 3 hours. (Comparative Example 2) Print sealing was performed under vacuum (0.13 kPa), and after returning to normal pressure, 100 ° C / 1 hour + 150 ° C /
It was cured by heating for 3 hours. (Comparative Example 3) Print sealing was performed under vacuum (0.13 kPa), and after returning to normal pressure, 100 ° C / 1 hour + 150 ° C /
It was cured by heating for 3 hours.

【0040】(実施例1)印刷封止は常圧で行い、加圧
乾燥機で、490kPaの加圧下で、100℃/1時間
+150℃/3時間加熱して硬化した。 (実施例2)印刷封止は常圧で行い、真空チャンバー内
で0.4kPaの真空度で、3分脱泡した後、加圧乾燥
機で、490kPaの加圧下で、100℃/1時間+1
50℃/3時間加熱して硬化した。(実施例3)印刷封
止は真空(0.13kPa)下で行い、常圧に戻してか
ら、加圧乾燥機で、490kPaの加圧下で、100℃
/1時間+150℃/3時間加熱して硬化した。 (実施例4)印刷封止は真空(0.13kPa)下で行
い、連接した加圧乾燥炉で、すぐに490kPaの加圧
下で、100℃/1時間+150℃/3時間加熱して硬
化した。
Example 1 Printing and sealing were carried out at normal pressure, and cured by heating at 100 ° C./1 hour + 150 ° C./3 hours under a pressure of 490 kPa with a pressure dryer. (Example 2) Print sealing was carried out at normal pressure, and after defoaming for 3 minutes at a vacuum of 0.4 kPa in a vacuum chamber, 100 ° C./1 hour under a pressure drier of 490 kPa under pressure. +1
The composition was cured by heating at 50 ° C. for 3 hours. (Example 3) Printing and sealing were performed under vacuum (0.13 kPa), and after returning to normal pressure, 100 ° C. under a pressure drier of 490 kPa under pressure.
/ 1 hour + 150 ° C./3 hours to cure. (Example 4) Print sealing was performed under vacuum (0.13 kPa), and it was immediately heated and cured in a connected pressure drying furnace under pressure of 490 kPa at 100 ° C./1 hour + 150 ° C./3 hours. .

【0041】上記の製造工程を経て製造された電子部品
の外観、形状、並びに封止した樹脂中のボイドをSAT
(超音波探傷装置:日立建機ファインテック株式会社
製)製で10μm以上のものの数または、その程度を観
察した。その結果を図5に示した図表にまとめて記す。
図5は、本発明の実施例と比較例との製造結果を示す図
表である。図5に示す結果から、ICカード、時計、電
卓等に使用されるワイヤー本数が少なく且つ、そのピッ
チも狭くない(a)の形態のようなCOBに対しては、
印刷後に脱泡することで十分である。
The appearance and shape of the electronic component manufactured through the above manufacturing process, and the voids in the sealed resin are determined by SAT.
(Ultrasonic flaw detector: manufactured by Hitachi Construction Machinery Finetech Co., Ltd.) The number or the degree of those having a size of 10 μm or more was observed. The results are summarized in the chart shown in FIG.
FIG. 5 is a table showing manufacturing results of the example of the present invention and the comparative example. From the results shown in FIG. 5, it can be seen that the number of wires used for an IC card, a clock, a calculator, and the like is small and the pitch thereof is not narrow.
Defoaming after printing is sufficient.

【0042】また、(b)の形態のように同じCOBで
もワイヤー本数が多く且つ、そのピッチも狭いもので
は、真空下での印刷封止でもワイヤーの下にボイドが残
存する。それに対して、常圧印刷封止を行った後、真空
脱泡して大きな気泡を除去しておき、その後加圧硬化す
ることでよくなることが分かる。(c)の形態のように
封止エリアの外側に、基板の断面が存在する場合、ワイ
ヤーピッチがさほど狭くなくても、加圧硬化しなければ
ボイドが残存するのは、常圧で硬化している間に、基板
断面より基板中から気泡が発生していることが考えられ
る。このように硬化時の熱によって基板中からの気泡の
発生も加圧硬化することで抑制する効果が有る。
In the case where the number of wires is large and the pitch is narrow even in the same COB as in the case of (b), voids remain under the wires even when printing and sealing under vacuum. On the other hand, it can be seen that large pressure bubbles are removed by vacuum defoaming after normal-pressure printing sealing is performed, and then pressure curing is performed to improve the situation. In the case where the cross section of the substrate exists outside the sealing area as in the form of (c), even if the wire pitch is not so narrow, the void remains unless cured by pressure under normal pressure. It is conceivable that air bubbles are generated in the substrate from the cross section of the substrate during the operation. As described above, the generation of air bubbles from the inside of the substrate due to the heat at the time of curing has an effect of being suppressed by pressure curing.

【0043】更に(d)の形態のように封止エリアの外
側に、基板の断面が存在し且つ、ワイヤーのワイヤー本
数が多くピッチも狭いような場合、真空下での印刷と加
圧硬化を組み合わせる方法がベストとなる。また、
(e)のフリップチップの場合、脱泡では形状が乱れる
ので、やはり真空下での印刷と加圧硬化を組み合わせる
ことが最良となる。
Further, when the cross section of the substrate exists outside the sealing area and the number of wires is large and the pitch is narrow as in the form of (d), printing under pressure and curing under pressure are performed. The combination method is best. Also,
In the case of the flip chip of (e), since the shape is disturbed by defoaming, it is best to combine printing under vacuum with pressure curing.

【0044】[0044]

【発明の効果】以上説明したように、本発明によれば、
封止された液状樹脂に対して加圧工程を行っているの
で、液状樹脂の表面近くの気泡を抜き、抜けた後の窪み
をレベリングさせることができる。また、加熱加圧工程
では、加熱により樹脂の粘度を低下させつつ加圧するこ
とにより、ボイド又は気泡の体積を減少させて消滅させ
ることができる。このときに、加圧工程を経た後に加熱
加圧工程を行っているために、ボイドの消滅又は気泡の
除去により急激な体積減少を招かずに液状樹脂を十分に
レベリングすることができるとともに、液状樹脂全体に
均一に圧力が加わるため、液状樹脂の粘度が低下しても
封止形状の広がりが抑えることができる。よって、液状
樹脂内に気泡やボイドを残存させることなく、且つ高い
信頼性を有する電子部品を製造することができるという
効果がある。
As described above, according to the present invention,
Since the pressurizing step is performed on the sealed liquid resin, air bubbles near the surface of the liquid resin can be removed, and the recess after the removal can be leveled. In the heating and pressurizing step, the volume of voids or bubbles can be reduced and eliminated by applying pressure while reducing the viscosity of the resin by heating. At this time, since the heating and pressurizing step is performed after the pressurizing step, the liquid resin can be sufficiently leveled without abrupt volume reduction due to disappearance of voids or removal of bubbles, and Since pressure is uniformly applied to the entire resin, the spread of the sealing shape can be suppressed even if the viscosity of the liquid resin decreases. Therefore, there is an effect that an electronic component having high reliability can be manufactured without leaving bubbles and voids in the liquid resin.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の一実施形態による電子部品の製造方
法を示すフローチャートである。
FIG. 1 is a flowchart illustrating a method for manufacturing an electronic component according to an embodiment of the present invention.

【図2】 加熱時間と液状樹脂の粘度変化との関係を示
す図である。
FIG. 2 is a diagram showing a relationship between a heating time and a change in viscosity of a liquid resin.

【図3】 本発明の一実施形態による電子部品の製造装
置の構成を示す図である。
FIG. 3 is a diagram illustrating a configuration of an electronic component manufacturing apparatus according to an embodiment of the present invention.

【図4】 実際に製造した電子部品の形態を示す上面図
及び断面図である。
4A and 4B are a top view and a cross-sectional view illustrating a form of an actually manufactured electronic component.

【図5】 本発明の実施例と比較例との製造結果を示す
図表である。
FIG. 5 is a table showing manufacturing results of examples of the present invention and comparative examples.

【符号の説明】[Explanation of symbols]

1,2,3,4,5,100 基板 20 印刷室(封止室) 23 孔版 23a〜23c 孔 26a,26b スキージ 29 液状樹脂 70 加圧硬化炉(加熱加圧
室) 101 半導体チップ(電子部
品素子)
1, 2, 3, 4, 5, 100 substrate 20 printing room (sealing room) 23 stencils 23a to 23c holes 26a, 26b squeegee 29 liquid resin 70 pressure curing furnace (heating and pressing room) 101 semiconductor chip (electronic component) element)

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 基板に搭載された電子部品素子を液状樹
脂で封止する封止工程と、 前記液状樹脂で封止された電子部品素子を搭載する前記
基板を加圧状態とする加圧工程と、 前記加圧状態で前記基板を加熱することにより前記基板
を加熱加圧状態として、前記液状樹脂内の残存ボイドを
消滅させる加熱加圧工程と、 前記基板を加熱状態として前記液状樹脂を硬化させる硬
化工程とを有することを特徴とする電子部品の製造方
法。
1. A sealing step of sealing an electronic component element mounted on a substrate with a liquid resin, and a pressing step of pressing the substrate on which the electronic component element sealed with the liquid resin is mounted. Heating and pressurizing the substrate in the pressurized state to heat and pressurize the substrate to eliminate residual voids in the liquid resin; and curing the liquid resin while the substrate is in a heated state. And a curing step of causing the electronic component to be manufactured.
【請求項2】 前記硬化工程は、前記基板を前記加熱状
態にするとともに加圧状態とした加熱加圧状態として前
記液状樹脂を硬化させることを特徴とする請求項1記載
の電子部品の製造方法。
2. The method for manufacturing an electronic component according to claim 1, wherein in the curing step, the liquid resin is cured in a heating and pressing state in which the substrate is in the heating state and in a pressing state. .
【請求項3】 前記硬化工程における前記基板の加熱温
度は、前記加熱加圧工程における前記基板の加熱温度以
上に設定されることを特徴とする請求項1又は請求項2
記載の電子部品の製造方法。
3. The heating temperature of the substrate in the curing step is set to be equal to or higher than the heating temperature of the substrate in the heating and pressurizing step.
A method for producing the electronic component described in the above.
【請求項4】 前記加熱加圧工程における前記基板の加
熱温度は、前記液状樹脂の粘度を低下させる一次設定温
度に設定され、 前記硬化工程における前記基板の加熱温度は、前記液状
樹脂がゲル化する温度以上の二次設定温度に設定される
ことを特徴とする請求項1から請求項3の何れか一項に
記載の電子部品の製造方法。
4. The heating temperature of the substrate in the heating and pressurizing step is set to a primary set temperature for decreasing the viscosity of the liquid resin, and the heating temperature of the substrate in the curing step is such that the liquid resin is gelled. 4. The method of manufacturing an electronic component according to claim 1, wherein the secondary temperature is set to a temperature equal to or higher than a predetermined temperature. 5.
【請求項5】 前記封止工程は、前記基板に搭載された
電子部品素子の位置に応じて孔が形成された孔版を用い
て前記電子部品素子を封止することを特徴とする請求項
1から請求項4の何れか一項に記載の電子部品の製造方
法。
5. The electronic component device according to claim 1, wherein in the sealing step, the electronic component device is sealed using a stencil having holes formed in accordance with the position of the electronic component device mounted on the substrate. The method for manufacturing an electronic component according to any one of claims 1 to 4.
【請求項6】 前記封止工程では、前記電子部品素子の
封止を減圧下で行うことを特徴とする請求項1から請求
項5記載の電子部品の製造方法。
6. The method for manufacturing an electronic component according to claim 1, wherein in the sealing step, the electronic component element is sealed under reduced pressure.
【請求項7】 基板に搭載された電子部品素子の位置に
応じて孔が形成された孔版と、当該孔版上を摺動するス
キージとを少なくとも備え、前記電子部品素子を液状樹
脂で封止する封止室と、 前記封止室で前記電子部品素子が封止された基板を加熱
加圧状態とし、前記液状樹脂に残存するボイドを消滅さ
せるとともに、前記液状樹脂を硬化させる加熱加圧室と
を備えることを特徴とする電子部品の製造方法。
7. A stencil having holes formed in accordance with the position of an electronic component element mounted on a substrate, and a squeegee sliding on the stencil, and sealing the electronic component element with a liquid resin. A sealing chamber, and a heating and pressurizing chamber for heating and pressurizing the substrate in which the electronic component element is sealed in the sealing chamber, eliminating voids remaining in the liquid resin, and curing the liquid resin. A method for manufacturing an electronic component, comprising:
【請求項8】 前記加熱加圧室における前記基板の加熱
温度は、前記ボイドを消滅させる場合には前記液状樹脂
の粘度を低下させる一次設定温度に設定され、前記液状
樹脂を硬化させる場合には前記液状樹脂がゲル化する温
度以上の二次設定温度に設定されることを特徴とする請
求項7記載の電子部品の製造装置。
8. The heating temperature of the substrate in the heating and pressurizing chamber is set to a primary set temperature at which the viscosity of the liquid resin is reduced when the voids are eliminated, and when the liquid resin is cured. 8. The apparatus for manufacturing an electronic component according to claim 7, wherein the secondary resin is set at a secondary temperature equal to or higher than a temperature at which the liquid resin gels.
【請求項9】 前記封止室は、前記基板を封止する場合
に減圧状態に設定されることを特徴とする請求項7又は
請求項8記載の電子部品の製造装置。
9. The apparatus according to claim 7, wherein the sealing chamber is set in a reduced pressure state when the substrate is sealed.
JP2000396803A 2000-12-27 2000-12-27 Electronic component manufacturing method and apparatus Expired - Fee Related JP3681636B2 (en)

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