JP2002198309A - 熱的な負荷の少ない照明系 - Google Patents

熱的な負荷の少ない照明系

Info

Publication number
JP2002198309A
JP2002198309A JP2001329854A JP2001329854A JP2002198309A JP 2002198309 A JP2002198309 A JP 2002198309A JP 2001329854 A JP2001329854 A JP 2001329854A JP 2001329854 A JP2001329854 A JP 2001329854A JP 2002198309 A JP2002198309 A JP 2002198309A
Authority
JP
Japan
Prior art keywords
illumination system
light source
grid element
grid
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001329854A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002198309A5 (enExample
Inventor
Wolfgang Singer
ヴォルフガング・ジンガー
Wilhelm Ulrich
ヴィルヘルム・ウルリッヒ
Martin Antoni
マルティン・アントニ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss AG
Original Assignee
Carl Zeiss AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10053587A external-priority patent/DE10053587A1/de
Application filed by Carl Zeiss AG filed Critical Carl Zeiss AG
Publication of JP2002198309A publication Critical patent/JP2002198309A/ja
Publication of JP2002198309A5 publication Critical patent/JP2002198309A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Lenses (AREA)
  • Microscoopes, Condenser (AREA)
  • Materials For Photolithography (AREA)
JP2001329854A 2000-10-27 2001-10-26 熱的な負荷の少ない照明系 Pending JP2002198309A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10053587A DE10053587A1 (de) 2000-10-27 2000-10-27 Beleuchtungssystem mit variabler Einstellung der Ausleuchtung
DE10053587.9 2000-10-27
DE20100123U DE20100123U1 (de) 2000-10-27 2001-01-05 Beleuchtungssystem mit reduzierter Wärmebelastung
DE20100123.3 2001-01-05

Publications (2)

Publication Number Publication Date
JP2002198309A true JP2002198309A (ja) 2002-07-12
JP2002198309A5 JP2002198309A5 (enExample) 2005-10-27

Family

ID=26007516

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001329854A Pending JP2002198309A (ja) 2000-10-27 2001-10-26 熱的な負荷の少ない照明系

Country Status (4)

Country Link
US (1) US6611574B2 (enExample)
EP (1) EP1202100A3 (enExample)
JP (1) JP2002198309A (enExample)
KR (1) KR20020033059A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007288188A (ja) * 2006-04-11 2007-11-01 Carl Zeiss Smt Ag ズーム対物光学系を備えた照明システム
JP2010525570A (ja) * 2007-04-19 2010-07-22 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法
EP2341391A3 (en) * 2002-07-22 2011-08-17 Carl Zeiss SMT GmbH Projection objective for a projection exposure apparatus
JP2012504319A (ja) * 2008-09-30 2012-02-16 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖマイクロリソグラフィ用の照明系
JP2016517027A (ja) * 2013-03-14 2016-06-09 カール・ツァイス・エスエムティー・ゲーエムベーハー エタンデュを増大させるための光学組立体
JP2016148873A (ja) * 2010-09-15 2016-08-18 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系
JP2017182094A (ja) * 2017-06-30 2017-10-05 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明システム
US11834226B2 (en) 2007-04-19 2023-12-05 Anheuser-Busch Inbev S.A. Integrally blow-moulded bag-in-container having interface vents opening to the atmosphere at location adjacent to bag's mouth; preform for making it; and processes for producing the preform and bag-in-container
US11890784B2 (en) 2007-04-19 2024-02-06 Anheus Er-Busch Inbev S.A. Integrally blow-moulded bag-in-container having an inner layer and the outer layer made of the same material and preform for making it
US12233589B2 (en) 2007-04-19 2025-02-25 Anheuser-Busch Inbev S.A. Integrally blow-moulded bag-in-container having a bag anchoring point, process for the production thereof, and tool thereof

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19520563A1 (de) * 1995-06-06 1996-12-12 Zeiss Carl Fa Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
US7378666B2 (en) 2002-10-11 2008-05-27 Qimonda Ag Irradiation device for testing objects coated with light-sensitive paint
US7283209B2 (en) * 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
JP2007150295A (ja) * 2005-11-10 2007-06-14 Carl Zeiss Smt Ag ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム
DE102006056035A1 (de) * 2006-11-28 2008-05-29 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Projektions-Mikrolithographie, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
DE102012218221A1 (de) 2012-10-05 2014-04-10 Carl Zeiss Smt Gmbh Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem
KR101712299B1 (ko) 2012-10-27 2017-03-13 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3360686B2 (ja) * 1990-12-27 2002-12-24 株式会社ニコン 照明光学装置および投影露光装置並びに露光方法および素子製造方法
US5581605A (en) 1993-02-10 1996-12-03 Nikon Corporation Optical element, production method of optical element, optical system, and optical apparatus
US5361292A (en) 1993-05-11 1994-11-01 The United States Of America As Represented By The Department Of Energy Condenser for illuminating a ring field
US5339346A (en) 1993-05-20 1994-08-16 At&T Bell Laboratories Device fabrication entailing plasma-derived x-ray delineation
JP3608580B2 (ja) * 1995-03-22 2005-01-12 株式会社ニコン 照明光学装置、露光装置、露光方法、及びフライアイレンズ
US5737137A (en) 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
EP1041606A4 (en) * 1997-11-10 2005-02-09 Nikon Corp EXPOSURE APPARATUS
JP4238390B2 (ja) * 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
EP0955641B1 (de) * 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
DE19903807A1 (de) 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2341391A3 (en) * 2002-07-22 2011-08-17 Carl Zeiss SMT GmbH Projection objective for a projection exposure apparatus
JP2007288188A (ja) * 2006-04-11 2007-11-01 Carl Zeiss Smt Ag ズーム対物光学系を備えた照明システム
JP2010525570A (ja) * 2007-04-19 2010-07-22 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびデバイス製造方法
US11834226B2 (en) 2007-04-19 2023-12-05 Anheuser-Busch Inbev S.A. Integrally blow-moulded bag-in-container having interface vents opening to the atmosphere at location adjacent to bag's mouth; preform for making it; and processes for producing the preform and bag-in-container
US11890784B2 (en) 2007-04-19 2024-02-06 Anheus Er-Busch Inbev S.A. Integrally blow-moulded bag-in-container having an inner layer and the outer layer made of the same material and preform for making it
US12233589B2 (en) 2007-04-19 2025-02-25 Anheuser-Busch Inbev S.A. Integrally blow-moulded bag-in-container having a bag anchoring point, process for the production thereof, and tool thereof
JP2012504319A (ja) * 2008-09-30 2012-02-16 カール・ツァイス・エスエムティー・ゲーエムベーハー Ｅｕｖマイクロリソグラフィ用の照明系
US9304400B2 (en) 2008-09-30 2016-04-05 Carl Zeiss Smt Gmbh Illumination system for EUV microlithography
JP2016148873A (ja) * 2010-09-15 2016-08-18 カール・ツァイス・エスエムティー・ゲーエムベーハー 結像光学系
US10007187B2 (en) 2010-09-15 2018-06-26 Carl Zeiss Smt Gmbh Imaging optical system
JP2016517027A (ja) * 2013-03-14 2016-06-09 カール・ツァイス・エスエムティー・ゲーエムベーハー エタンデュを増大させるための光学組立体
JP2017182094A (ja) * 2017-06-30 2017-10-05 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の照明システム

Also Published As

Publication number Publication date
EP1202100A2 (de) 2002-05-02
US6611574B2 (en) 2003-08-26
KR20020033059A (ko) 2002-05-04
EP1202100A3 (de) 2005-04-06
US20020141071A1 (en) 2002-10-03

Similar Documents

Publication Publication Date Title
JP3264224B2 (ja) 照明装置及びそれを用いた投影露光装置
US5345292A (en) Illumination device for projection exposure apparatus
JP4077619B2 (ja) 照明の設定が変更可能な照明系、該照明系を用いて照明を調整する方法、ｅｕｖ投影露光装置、及び、マイクロエレクトロニクス部品の製造方法
JP3005203B2 (ja) 照明装置、露光装置及びデバイス製造方法
US20080165925A1 (en) Double-facetted illumination system with attenuator elements on the pupil facet mirror
JP6221159B2 (ja) コレクター
JP3771414B2 (ja) リソグラフ投影装置
KR101386353B1 (ko) 푸리에 광학 시스템을 포함하는 조명 시스템
JP2003506881A (ja) Ｅｕｖ照明光学系の射出瞳における照明分布の制御
JP2004510340A (ja) 特にマイクロリソグラフィ用の照明光学系
JP2002198309A (ja) 熱的な負荷の少ない照明系
TW200302492A (en) Soft X-ray light source apparatus, EUV exposure apparatus, and illumination method
US11350513B2 (en) Stop for arrangement in a constriction of an EUV illumination beam
JP2010529668A (ja) マイクロリソグラフィツール用の反射照明システム
JP2004343082A (ja) 凹面および凸面を含む集光器を備えたリトグラフ投影装置
US10928733B2 (en) Illumination optic for projection lithography
TWI270120B (en) Illumination optical system and exposure apparatus
JP2002198309A5 (enExample)
JP5220136B2 (ja) 照明光学系、露光装置およびデバイス製造方法
CN107636537A (zh) Euv投射光刻的分面反射镜和包含该分面反射镜的照明光学单元
JP2004140390A (ja) 照明光学系、露光装置及びデバイス製造方法
JP3521506B2 (ja) 照明装置及び露光装置
JPH04250455A (ja) 円弧照明装置
JP3794442B2 (ja) 照明装置および露光装置
JP2025530223A (ja) レチクルを照明するための照明系、放射源装置、方法およびリソグラフィシステム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20040812

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20040812

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20040924

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040924

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050729

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070813

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070821

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20071116

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20071121

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20071221

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20071227

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080408

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080909