JP2002198294A - Electron beam drawing apparatus and semiconductor device manufactured by it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem of deteriorated throughput due to crosstalk noise generated by an electrostatic deflector via the capacitance between deflecting electrodes, the problem of unexpected deflection effects, and that of drawing not being made until the noise is reduced. SOLUTION: A shield electrode 12 at the ground potential is inserted into the gap between the concentrically and adjacently arranged deflecting electrodes 13. The output of a deflection control circuit 2 is connected to each deflecting electrode 13 by a shield wire where at least one side of a shield is set to the ground. By inserting the shield electrode 12, the crosstalk noise can be reduced between the deflecting electrodes 13, thus eliminating the need for waiting for drawing until noise is reduced, and hence increasing the speed of the throughput.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for irradiating a wafer or mask with a controlled
The present invention relates to an electron beam drawing apparatus that draws an I pattern or the like.

[0002]

2. Description of the Related Art A charged particle beam apparatus typified by a scanning electron microscope or an electron beam lithography apparatus irradiates an electron beam or an ion beam onto a sample to perform observation, processing and drawing. That is, in the case of an electron beam writing apparatus, an electron beam from an electron beam source is irradiated on an opening provided in a beam shaping aperture plate to form a cross-sectional form of the electron beam into a pattern shape of the opening. The formed electron beam is reduced by a reduction lens, and is deflected to a desired position on the surface of the sample by a deflector to irradiate the electron beam, thereby performing pattern exposure of a desired shape and size on the surface of the sample.

The types of deflectors for deflecting an electron beam are broadly classified into an electromagnetic deflector and an electrostatic deflector. The former provides a magnetic field change, and the latter provides an electric field change. Is generated. Electromagnetic deflectors are suitable for large area deflection, but the deflection speed is slow due to coil inductance and eddy currents.

On the other hand, an electrostatic deflector has only a charge / discharge time constant of its own electrostatic capacitance (capacitance), and therefore has a high deflection speed. The electrostatic deflector is incorporated in an electron optical column whose inside is kept in a vacuum. In general, the structure is such that four or more strip-shaped conductive plates (deflection electrodes) are insulated and arranged in the rotation direction with respect to the optical axis of the electron beam.

[0005] The deflection voltage corresponding to the drawing pattern data generated outside the electron optical column (in the atmosphere) is applied to the X-axis and Y-axis of the electrostatic deflector via a vacuum resistant connector (hermetic seal connector) using a signal cable. Applied to the axis deflection electrode. By applying a deflection voltage to the electrodes, a deflection electric field is generated, and the electron beam deflects in proportion to the strength of the electric field. When the electron beam has been deflected to a desired position on a sample such as a wafer, the beam is turned on for a predetermined time to perform writing.

Since the deflection voltage, which is a step waveform, has a high voltage amplitude of several tens to several hundreds of volts, the signal cable is open at the end. If the end is left open, ringing (damping oscillations that occur when the step waveform rises or falls) occurs due to reflection, so a series connection between the output of the deflection voltage generation circuit and the signal cable is used to suppress this. A method of inserting a resistor (damping resistor) is well known. The signal cable is a so-called coaxial cable, and its length is at least 1 m or more.
It has a capacitance of about pF.

Since the electrostatic deflector has a structure in which strip-shaped conductive plates (deflection electrodes) are arranged in the direction of rotation with respect to the optical axis, the gap between adjacent deflection electrodes is narrow (1 mm or less), It has a capacitance of about 1 pF between both electrodes. When a step deflection voltage of 20 V is applied to the X axis with a cable capacity of 100 pF, a voltage of about 200 mV is induced on the Y axis (crosstalk noise). Assuming that the resolution of a D / A converter / amplifier for converting drawing pattern data into deflection voltage is 16 bits, 1 LSB (Least Scale Bi-level) is used.
Since t) is about 300 μV, the crosstalk noise is nearly three orders of magnitude. About 200mV charged to 100pF
Attenuates exponentially with the time constant of the damping resistance. Now, assuming that the damping resistance is 50 ohms, the time required to converge to 1 LSB or less is about 55 nS.
(11 × C × R).

Now, it is assumed that the settling time of the D / A converter / amplifier (the time until reaching the allowable error range of the final attainment level) is 100 ns, the deflection voltage is 20 V, and the deflection voltage is applied to the X-axis deflection electrode. I do. In this case, an unintended deflection action due to crosstalk occurs on the Y axis for 100 ns. Thereafter, it decreases exponentially and falls within 1 LSB error after 55 nS. In other words, the electron beam writing apparatus only needs to wait 100 ns after starting the deflection,
It is not enough to ensure the accuracy, and it is necessary to wait for 155 ns before turning on the beam (shot).
Crosstalk was one of the factors that deteriorated the throughput.

A method capable of reducing a decrease in throughput due to crosstalk is disclosed in Japanese Patent Application Laid-Open No. 9-232208. According to the publication, a shot waiting time control circuit having a long waiting time and a shot waiting time control circuit having a short waiting time are provided, and the first shot (at the time of the maximum jump in the deflection field) or the second shot is controlled. This is switched depending on whether the shot is the second or later shot, and the waiting time of the first shot is made longer than the waiting time of the second shot or later. As a result, disturbance of the deflection signal due to large crosstalk noise during the first shot does not affect the drawing position. Therefore, it is possible to prevent a decrease in the drawing position accuracy due to crosstalk.

[0010]

In the above-mentioned conventional example, the first jump which makes the maximum jump from one end of the deflection field to the other end is performed.
Since the waiting time for a shot and the waiting time for an adjacent shot with a small deflection distance can be switched, the waiting time until the influence of crosstalk noise is eliminated can be optimized. However, since this does not mean that no crosstalk noise is generated, there is a problem that a significant reduction in throughput cannot be expected.

The present invention has been made in view of the above drawbacks, and has substantially improved the throughput by reducing the crosstalk noise itself and reducing the waiting time until the conventionally required crosstalk noise disappears. It is an object of the present invention to provide an electron beam lithography apparatus capable of performing the above.

[0012]

In order to achieve the above object, the electron beam writing apparatus of the present invention has the following features. (1) The electrostatic deflector has a plurality of electrodes arranged around the optical axis of the electron beam, and the plurality of electrodes have a fixed potential every other electrode. . (2) The electrostatic deflector has a plurality of deflection electrodes arranged around the optical axis of the electron beam and is provided with an electrode having a fixed potential between adjacent deflection electrodes. And (3) an electrostatic deflector is arranged around the electron beam;
It has four or more deflection electrodes to which different potentials can be applied,
Further, an electrode having a fixed potential is provided between adjacent deflection electrodes. (4) In the above configuration, the fixed potential is a ground potential. (5) In the above configuration, the electrostatic deflector is a deflector for determining a drawing position or a deflector for determining a shape of an electron beam. (6) In the above configuration, the electrostatic deflector may be, for example, eight electrodes (the inner half electrode has a fixed voltage), 16 electrodes (the inner half electrode has a fixed voltage), or 24 electrodes (the inner half electrode). Are provided with a fixed voltage). (7) In the above structure, a gap between adjacent electrodes is 100 μm to 1 mm. (8) In the above configuration, a multi-drawing function is provided.

Further, by using the electron beam drawing apparatus having the above configuration, a circuit pattern to be incorporated in a semiconductor device or the like can be drawn at high speed and with high accuracy.

[0014]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic view of a main part of a basic embodiment of an electrostatic deflector according to the present invention. In FIG.
(A) is a top view of the electrostatic deflector, and (b) is a partial three-dimensional view.

The electrostatic deflector includes a deflecting electrode 13, a shield electrode 12, and an insulating support member 1 around the optical axis of the electron beam.
0, and a cylindrical electrode support 11. The deflection electrode 13 is fixed to the cylindrical electrode support 11 via the insulating support member 10. At least one end of the shield is connected between the fixed deflection electrodes 13 and the deflection control circuit 2 using the shield wire 4 connected to the ground. The shield line 4 is necessary to prevent crosstalk due to electrostatic coupling between adjacent transmission lines. Although the deflection electrodes are arranged in the circumferential direction around the optical axis of the electron beam in the drawing, a rectangular arrangement can also be applied.

Between the adjacent deflection electrodes 13a and 13b,
A shield electrode 1 fixed directly or insulated to the electrode support 11 between the deflection electrodes 13b and 13c, respectively.
2a, the shield electrode 12b (and the like) are inserted.
Each shield electrode 12 is connected to a ground wire 3 for applying a fixed potential. When the electrode support 11 is a conductor and the conductor is connected to the ground, each shield electrode 12 may be directly fixed to the electrode support 11.

Since the mutual interference between the electrodes is shielded by inserting the shield electrode 12a between the deflection electrodes 13a and 13b, crosstalk between the deflection electrodes can be greatly reduced. In order to insert a fixed potential between the variable potential electrodes and deflect the electron beam without changing the average potential of the entire deflector, an electrostatic deflector for determining the drawing position or shaping the electron beam , A minimum of four deflection electrodes are required as an electrostatic deflector for determining.

Accordingly, the present invention includes the following embodiments. (1) An electrostatic deflector having a plurality of electrodes around an optical axis of an electron beam, for example, in a circumferential direction around the optical axis, and fixes the potential of every other electrode. (2) An electrostatic deflector having four or more deflecting electrodes around the optical axis of an electron beam, in which a new electrode is provided between adjacent deflecting electrodes and the potential of such an electrode is fixed. (3) There is an electrostatic deflector having four or more deflection electrodes around the optical axis of the electron beam, and an electrode having a fixed potential is provided between deflection electrodes to which different potentials can be applied. . (4) An electrostatic deflector having four or more electrodes around the optical axis of the electron beam, wherein an electrode having a potential fixed to half of the electrodes is provided. (5) Further, in order to obtain the effect of reducing the 4-fold symmetric aberration,
16 electrodes for high symmetry of the deflector
(In which 8 poles are deflection electrodes and the other 8 poles are fixed voltage) or 24 electrodes (12 poles are deflection electrodes and the other 12 poles are fixed voltage) are required.

It is desirable that the gap between the shield electrode 12 and the deflection electrode 13 be narrower, since the deflection sensitivity can be increased because the area of the deflection electrode can be increased. However, if it is too narrow, discharge occurs between the electrodes. In the present invention, the deflection electrode 13
Is a gap that does not discharge due to the deflection voltage applied to the gap. The specific value of the gap is desirably larger than 100 μm and smaller than 1 mm.

In the present invention, a high-speed and high-precision pattern is drawn on a wafer or a mask by a drawing apparatus having an electrostatic deflector in which the influence of crosstalk noise is reduced. The mask on which the pattern is drawn is further used for drawing a wafer with an EB transfer device or an optical transfer device. , Wire bonding, wireless bonding, sealing, and the like, and then incorporated into a semiconductor device.

(Embodiment 1) FIG. 2 is a configuration diagram of an electron beam lithography apparatus showing a first embodiment of the present invention. An electron beam lithography system includes a high-voltage power supply for controlling an electron gun that generates and emits an electron beam, a mechanical system such as a stage on which a wafer and a mask are mounted, and an electron beam optical mirror, in addition to an electron beam optical mirror. The system consists of a vacuum evacuation control system for keeping the inside of the body in a vacuum, a control computer for sending and receiving drawing data and controlling necessary for drawing, and a lens power supply for supplying a controlled current to various electromagnetic lenses. You. In the present embodiment, for convenience of explanation, detailed description of all the systems of the electron beam writing apparatus is omitted, and only functional blocks according to the present invention are shown in the drawings.

In FIG. 2A, an electron gun 30 emits an electron beam 31 downward. The electron beam 31 emitted from the electron gun 30 is applied to the first aperture 33 and the first aperture 33.
Molded lens 34, molded deflector 35, second molded lens 3
A rectangular electron beam whose current magnitude, focus, rotation, and the like are optimized by (6) is irradiated onto a desired opening of the second aperture 37 having a rectangular opening or an opening of an arbitrary shape. By adjusting the irradiation position on the rectangular aperture, a rectangular beam of any size can be formed. Molding deflector 35
Is an electrostatic deflector for shaping a rectangular beam of an arbitrary size. The shaping data from the drawing control circuit 20 is converted into a voltage by a variable shaping D / A converter 21 and an amplifier 22.
By providing the beam to the shaping deflector 35, a rectangular beam having a desired size is generated.

The electron beam 31 having passed through the second aperture 37 is supplied to a reduction lens 38, an objective diaphragm 39, and an objective lens 4.
The size and focus of the shaping beam are appropriately controlled by 2 to irradiate a sample 43 such as a wafer or a mask placed on the sample stage 44. On / off control of the electron beam 31 for irradiating the wafer or the like is performed by turning on / off a voltage applied to a blanking plate 32 disposed below the electron gun 30. Although illustration is omitted, on / off control is performed under the instruction of the drawing control circuit 20.

The deflection of the electron beam 31 toward the sample 43 is performed by applying a deflection current or voltage of a predetermined magnitude to the electromagnetic deflector 40 and the electrostatic deflector 41. In the present embodiment, two-stage deflection is performed in which field deflection is performed by an electromagnetic deflector and subfield deflection is performed at high speed by an electrostatic deflector. The deflection control is all performed based on the control of the drawing control circuit 20. The drawing control circuit 20 supplies deflection data to the electromagnetic deflection control circuit 45 for the electromagnetic deflector 40, generates a deflection current of a desired magnitude in the electromagnetic deflection control circuit 45, and controls the electromagnetic deflector 40. , The deflection of the electron beam 31 is controlled.

FIG. 2B is a top view of the electrostatic deflector 41,
(C) is a partial three-dimensional view thereof. As shown in enlarged views (b) and (c), the electrostatic deflector 41 according to the present invention has 16 electrodes concentrically and 8 wide deflection electrodes 1.
3 was applied with a deflection voltage, and a ground voltage as a fixed voltage was applied to the eight narrow electrodes 12 between the deflection electrodes. By using a deflector having 16 electrodes,
A deflection voltage can be applied to half of the eight electrodes, and third-order or higher four-fold symmetric aberration can be reduced.

Further, astigmatism correction is possible by adding an astigmatism correction voltage to the deflection electrode. This makes it possible to achieve both low aberration and high speed. If the absolute voltage is equal between the facing electrodes and a deflection voltage of inverted polarity is applied, the average voltage is always zero. Since it does not affect the energy of the electron beam, the deflecting action can be given without changing the focus state or the like.

In this embodiment, the fixed potential between the deflection electrodes is set to the ground potential. Considering only the effect of preventing crosstalk, it is not necessary to be the ground potential. However, since it is advantageous for the control system and the optical system to apply the above-mentioned inverted potential, it is necessary to reduce the influence on the optical aberration of the fixed potential electrode by setting the fixed potential to the ground potential. Can be done. On the other hand, when a voltage of the same polarity is applied between the facing electrodes, the astigmatism of the electron beam can be adjusted. For example, when a voltage having a positive polarity is applied to the facing electrode, the cross section of the electron beam is elongated. That is, astigmatism adjustment can be performed.

The drawing deflection D / A converter 23 outputs, based on the data of the drawing control circuit 20, deflection voltages of plus and minus 10 V and minus and plus 10 V of opposite polarity in XY. The resolution is 16 bits. Similarly, the astigmatism correction D / A converter 24 outputs XY deflection voltages of ± 10 V and − + 10 V of opposite polarity based on the astigmatism correction data of the drawing control circuit 20.

These two kinds of four voltages are converted into an 8-pole arithmetic circuit 2
In step 5, an addition / subtraction process is performed in an analog manner, and eight deflection signals are generated and supplied to the amplifier 26. There are eight amplifiers 26 (not shown), and outputs a maximum of 20V. The outputs of the eight amplifiers are respectively connected to the corresponding deflection electrodes 13 of the electrostatic deflector 41 using eight shield wires 4 having a length of about 1 m. Since the shield wire is used, no crosstalk noise occurs between the amplifier and the deflection electrode 13.

The settling time of the deflection signal applied to the deflection electrode 13 is 100 times including the operation time of the D / A converter.
nS. Maximum of 20V / 1 between electrodes of electrostatic deflector
Although a voltage change of 00 nS occurs, since each deflection electrode 13 of the electrostatic deflector 41 is shielded by the shield electrode 12 so as not to interfere with each other, crosstalk noise hardly occurs.

Therefore, when the drawing control circuit 20 outputs a beam-on command to the blanking electrode 100 ns after outputting the electrostatic deflection data, the electron beam is output to the wafer 4 or the like.
Since a desired position of No. 3 can be irradiated, accurate drawing is performed. After irradiating the resist applied on the surface of the wafer or the like for a time required for pattern drawing, the beam is turned off, deflection to the next drawing position is started, and the drawing operation is repeated.

The relative position between the electron beam and the wafer becomes unstable due to noise, vibration, or the like, and a required drawing accuracy may not be obtained. As a method that can improve the drawing accuracy by averaging the fluctuation of the drawing position due to noise and vibration, after drawing with an underdose first, after a suitable time elapses,
A so-called multiple drawing method of drawing a previously drawn portion again is known. According to the multiple drawing method, the influence of noise or the like can be reduced. However, in the case of the conventional electrostatic deflector, no matter how many times the multiple writing is performed, the crosstalk noise is generated each time, so that the averaging effect cannot be expected.

If the electrostatic deflector according to the present invention is used, the influence of crosstalk is reduced, so that it is possible to draw with a waiting time of 100 ns regardless of whether or not there is multiple drawing. For example, if the number of drawing shots is 1 × 10 ¹⁰ shots,
55 ns × 1 × 10 ¹⁰ shots = 550 seconds can be reduced.

A high-speed and high-precision pattern was drawn on a wafer or a mask by using the electron beam drawing apparatus having the electrostatic deflector of the present invention. In particular, the mask was subjected to multiple writing.
The mask on which the pattern was drawn was used for drawing a wafer with an EB transfer device or an optical transfer device. The wafer drawn directly through such a mask or by an electron beam drawing apparatus was incorporated into a semiconductor device through processes such as dicing, die bonding, wire bonding, wireless bonding, and sealing. As a result, a good semiconductor device was obtained.

(Embodiment 2) FIG. 3 shows a second embodiment of the present invention applied to an electron beam lithography system in which all deflectors are electrostatic deflectors.
Is shown. FIG. 3A is an overall configuration diagram,
(B) is an enlarged top view of the electrostatic deflector 66, and (c) is a partial three-dimensional view. The electrostatic deflector 41 is the same as in the first embodiment, and a description thereof will be omitted.

The electrostatic deflector 66 has a minimum deflection unit of 125 n
m, an electrostatic deflector for deflecting a field size of about 80 μm square. The deflection sensitivity is approximately 40 μm / 10V. In order to deflect a large deflection field with a small deflection astigmatism, it is desirable that the number of divided poles of the deflector is large. In this embodiment, 24 electrodes are used. The shield electrode 12 was arranged between the adjacent wide electrodes 13. To avoid discharge, the gap between the shield electrode and the deflection electrode should be 1
The size was from 00 μm to 1 mm.

The drawing field data from the drawing control circuit 20 is converted into an analog current (voltage) by a main deflection D / A converter 61 having a resolution of 16 bits. Each amplifier 64 and each deflecting electrode 13 of the electrostatic deflector 66 were connected by a shielded cable 65 to prevent crosstalk between signal lines. Each of the shield electrodes 12 was connected to the ground wire 3. As a result, the crosstalk noise could be reduced to the extent that there was no obstacle.

The reason why 24 electrodes are used in this embodiment is that only four voltages of ± Vx and ± Vy need to be applied to the deflection electrode. With 16 electrodes, it is necessary to form eight types. Therefore, the deflector having 24 electrodes has a complicated mechanical structure, but can simplify the control circuit. As a result, the shot waiting time for drawing could be limited to the settling wait time of the D / A converter / amplifier, so that the throughput could be reduced.

(Embodiment 3) FIG. 4 shows a third embodiment of the present invention when the present invention is applied to a subfield deflector and a variable shaping deflector. 4A is an overall configuration diagram, FIG. 4B is an enlarged top view of the deflector 35,
(C) is a partial three-dimensional view thereof.

Since the maximum beam size on the sample 43 such as a wafer is about 5 microns, the deflector was a deflector having eight electrodes. Four shield electrodes 12 were arranged in gaps adjacent to the four deflection electrodes 13 and connected to the ground wire 3. This gives a total of eight poles. Since the electrodes used for deflection are four poles, it is difficult to remove four-fold symmetric aberration, but there is no problem in the present embodiment because the substantial deflection distance is small.

The variable shaping data of the drawing control circuit 20 is supplied to the variable shaping D / A converter 21 and the amplifier 22 at a maximum of about 40 V / 1.
It is converted to a voltage of 00nS. The output signals of the four amplifiers 22 (all not shown) are
7 and connected to the four electrostatic deflectors 13 respectively. The gap between the deflection electrode 13 and the shield electrode 12 is 20
Since it is about V, it was set to 100 to 500 microns.

As a result of this embodiment, the time required for deflecting to a drawing position in a subfield, setting a variable shaped beam, and performing drawing (shot) could be approximately 100 ns. Conventionally, after waiting for about 55 nS for crosstalk after 100 nS, this waiting time could be reduced to almost zero, so that the throughput could be reduced.

(Embodiment 4) FIG. 5 shows a fourth embodiment of the present invention, in which the shape of the shield electrode is changed. The shield electrode 12 has a structure in which the width of the deflecting plate 13 is reduced every other one, and a plate for shielding electric field leakage is provided outside the narrow electrode. In addition, the effect of the present invention can be obtained as long as the structure can shield the electrostatic deflecting plates so that the electric fields of adjacent deflecting electrostatic deflecting plates do not affect each other.

As described above, according to the above-described embodiment, it is possible to make the crosstalk noise of the electrostatic deflector almost zero, thereby enabling a circuit pattern incorporated in a semiconductor device or the like to be formed at high speed and with high precision. Can be drawn.

Further, the electrostatic deflector according to the present invention is not limited to the electron beam lithography apparatus as shown in the above-described embodiment.
The present invention is also applicable to inspection / measurement using a scanning electron microscope or a charged particle beam.

[0047]

As described above, according to the present invention,
Crosstalk noise generated between adjacent electrostatic deflection plates can be reduced, and the waiting time until the crosstalk noise disappears, which is conventionally required, can be reduced, thereby greatly increasing the throughput. it can.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a basic embodiment of an electrostatic deflector according to the present invention.

FIG. 2 is a configuration diagram illustrating a first embodiment according to the present invention.

FIG. 3 is a configuration diagram illustrating a second embodiment according to the present invention.

FIG. 4 is a configuration diagram illustrating a third embodiment according to the present invention.

FIG. 5 is a configuration diagram illustrating a fourth embodiment according to the present invention.

[Explanation of symbols]

Reference numeral 2 denotes a deflection control circuit, 2 'denotes a sub deflection control circuit, 3 denotes a ground wire, 4 denotes a shield wire, 10 denotes an insulating support member, 11 denotes a cylindrical electrode support, 12, 12a, 12b denotes a shield electrode, and 13, 13a, 13b, 13c ... deflection electrode, 20 ...
Drawing control circuit, 21: variable shaping D / A converter, 22: amplifier, 23: drawing deflection D / A converter, 24: astigmatism D /
A converter, 25 ... 8 pole arithmetic circuit, 26 ... Amplifier, 30 ...
Electron gun, 31 ... electron beam, 32 ... blanking plate, 3
DESCRIPTION OF SYMBOLS 3 ... 1st aperture, 34 ... 1st shaping lens, 35 ... shaping deflector, 36 ... 2nd shaping lens, 37 ... 2nd aperture, 38 ... reduction lens, 39 ... objective diaphragm, 40 ... electromagnetic deflector, 41 ... Electrostatic deflector, 42 Objective lens, 43 Sample, 44 Sample stage, 45 Electromagnetic deflection control circuit, 5
0: Electro-optical mirror, 60: Main deflection control circuit, 61: Main deflection D / A converter, 62: Astigmatism D / A converter, 63: 1
Bipolar operation circuit, 64: amplifier, 65: shielded cable, 66: electrostatic deflector, 67: shielded cable.

 ────────────────────────────────────────────────── ─── Continuing from the front page (72) Inventor Koji Nagata 1-280 Higashi-Koigabo, Kokubunji-shi, Tokyo F-term in Central Research Laboratory, Hitachi, Ltd. 2H097 AA03 BB03 CA16 LA10 5C033 GG02 5F056 AA03 CB12 CC01 EA06

Claims (5)

[Claims] 1. An electron beam emitted from an electron gun,
In an electron beam writing apparatus for writing a pattern on a sample via an electron optical system including an electrostatic deflector, the electrostatic deflector has a plurality of electrodes arranged around an optical axis of the electron beam. An electron beam writing apparatus, wherein the plurality of electrodes have a fixed potential every other electrode. 2. An electron beam emitted from an electron gun,
In an electron beam writing apparatus for writing a pattern on a sample via an electron optical system including an electrostatic deflector, the electrostatic deflector comprises four or more deflection electrodes arranged around an optical axis of the electron beam. And an electrode having a fixed potential between the adjacent deflection electrodes is provided. 3. An electron beam emitted from an electron gun,
In an electron beam drawing apparatus that draws a pattern on a sample via an electron optical system including an electrostatic deflector, the electrostatic deflector can apply different potentials arranged around the optical axis of the electron beam. Having four or more deflection electrodes, and
An electron beam writing apparatus comprising an electrode having a ground potential provided between adjacent deflection electrodes. 4. An electron beam lithography apparatus according to claim 1, wherein said electrostatic deflector is a deflector for determining a drawing position or a deflector for determining a shape of an electron beam. 5. A semiconductor device manufactured by using the electron beam lithography apparatus according to claim 1.