JP4535602B2 - Electron beam exposure apparatus and electron lens - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an electron beam exposure apparatus and an electron lens. In particular, the present invention relates to an electron beam exposure apparatus and an electron lens that can individually focus a plurality of electron beams.
[0002]
[Prior art]
FIG. 1 is a cross-sectional view of a multi-axis electron lens 300 in a conventional electron beam exposure apparatus. In the multi-axis electron lens 300, by using one lens coil 310 and two magnetic conductor members 330 having a plurality of openings 320, a plurality of electron beams can be independently emitted from each of the plurality of openings 320. It was focused.
[0003]
[Problems to be solved by the invention]
However, since the magnetic field 340 generated in the plurality of openings 320 by one lens coil 310 is not symmetric with respect to the central axis of the opening 320, a plurality of electron beams passing through the openings 320 are combined at the same position. It was difficult to image.
[0004]
Therefore, an object of the present invention is to provide an electron beam exposure apparatus and an electron lens that can solve the above-described problems. This object is achieved by a combination of features described in the independent claims. The dependent claims define further advantageous specific examples of the present invention.
[0005]
[Means for Solving the Problems]
That is, according to the first aspect of the present invention, an electron beam exposure apparatus that exposes a wafer with a plurality of electron beams, wherein the electron beam generating unit that generates the plurality of electron beams and the plurality of electron beams are independent of each other. And an electron lens portion that is focused in parallel to the first main magnetic conductor portion including a plurality of first openings through which a plurality of electron beams pass, and the first main magnetic conductor portion. A second main magnetic conductor portion that includes a plurality of second openings that are disposed and through which a plurality of electron beams pass, and a first main magnetic conductor portion that is substantially parallel to the electron beam irradiation direction around the first openings. And a plurality of first submagnetic conductor portions provided so as to protrude in various directions.
[0006]
The electron lens unit may have a plurality of first sub-magnetic conductor parts having different intervals from the second main magnetic conductor part. The electron lens unit may further include a coil unit that is provided around the first main magnetic conductor unit and the second main magnetic conductor unit and generates a magnetic field. The interval between the predetermined first submagnetic conductor portion and the second main magnetic conductor portion is different from the other first submagnetic conductor portion and the second main magnetic conductor disposed at a position farther from the coil portion than the predetermined first submagnetic conductor portion. It may be larger than the interval with the magnetic conductor portion.
[0007]
The distance between each of the plurality of first sub-magnetic conductor portions and the second main magnetic conductor portion is substantially symmetric with respect to the central axis of the region where the plurality of second openings are provided in the second main magnetic conductor portion. There may be. The electron lens portion further includes a plurality of second sub magnetic conductor portions provided in the second main magnetic conductor portion so as to protrude in a direction substantially parallel to the electron beam irradiation direction around the second opening. May be.
[0008]
The distance between the predetermined first submagnetic conductor portion and the predetermined second submagnetic conductor portion facing the predetermined first submagnetic conductor portion is different from that of the other first submagnetic conductor portion and the other first submagnetic conductor portion. It may be different from the distance between the magnetic conductor portion and another second sub magnetic conductor portion facing the magnetic conductor portion. The distance between the predetermined first submagnetic conductor portion and the predetermined second submagnetic conductor portion is different from that of the other first submagnetic conductor portion disposed at a position farther from the coil portion than the predetermined first submagnetic conductor portion. It may be larger than the distance from the second submagnetic conductor.
[0009]
The distance between each of the plurality of first sub magnetic conductor portions and each of the plurality of second sub magnetic conductor portions is relative to the central axis of the region where the plurality of second openings are provided in the second main magnetic conductor portion. May be substantially symmetrical.
[0010]
The electron lens portion further includes a non-magnetic conductor portion provided around the first sub-magnetic conductor portion and a second sub-magnetic conductor portion provided on substantially the same axis as the first sub-magnetic conductor portion. Also good. The nonmagnetic conductor portion may be sandwiched between the first submagnetic conductor portion and the second submagnetic conductor portion.
[0011]
According to another aspect of the invention, an electron lens unit that focuses a plurality of electron beams independently, the electron lens unit including a plurality of first openings through which the plurality of electron beams pass. In the first main magnetic conductor portion, the conductor portion, the second main magnetic conductor portion that is disposed substantially parallel to the first main magnetic conductor portion and includes a plurality of second openings through which a plurality of electron beams pass, A plurality of first submagnetic conductor portions provided so as to protrude in a direction substantially parallel to the electron beam irradiation direction are provided around the first opening.
[0012]
The above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, the present invention will be described through embodiments of the invention. However, the following embodiments do not limit the claimed invention, and all combinations of features described in the embodiments are solutions of the invention. It is not always essential to the means.
[0014]
FIG. 2 shows a configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 that performs a predetermined exposure process on the wafer 44 using an electron beam, and a control system 140 that controls the operation of each component included in the exposure unit 150.
[0015]
The exposure unit 150 generates a plurality of electron beams inside the housing 8 and forms an electron beam cross-sectional shape as desired, and whether to irradiate the wafer 44 with the plurality of electron beams. There is provided an electron optical system including an irradiation switching means 112 that switches independently for each electron beam, and a wafer projection system 114 that adjusts the direction and size of the pattern image transferred to the wafer 44. The exposure unit 150 includes a stage system including a wafer stage 46 on which a wafer 44 whose pattern is to be exposed is placed, and a wafer stage drive unit 48 that drives the wafer stage 46. Further, the exposure unit 150 includes an electron detection unit 40 that detects secondary electrons, reflected electrons, and the like emitted from the mark unit by an electron beam applied to the mark unit provided on the wafer 44 or the wafer stage 46. The electron detection unit 40 outputs a detection signal corresponding to the detected amount of reflected electrons to the reflected electron processing unit 94.
[0016]
The electron beam shaping means 110 includes a first shaping member that has a plurality of electron beam generating portions 10 that generate a plurality of electron beams and a plurality of openings that shape the cross-sectional shape of the irradiated electron beams by passing the electron beams. 14 and the second shaping member 22, the first multi-axis electron lens 16 for individually focusing the plurality of electron beams and adjusting the focal points of the plurality of electron beams, and the plurality of electron beams having passed through the first shaping member 14. The first shaping deflection section 18 and the second shaping deflection section 20 that independently deflect each other.
[0017]
The first multi-axis electron lens 16 includes a first main magnetic conductor portion 210a including a plurality of openings through which a plurality of electron beams pass, and is disposed substantially parallel to the first main magnetic conductor portion 210a. The second main magnetic conductor portion 210b including a plurality of openings through which the beam passes, and the openings of the first main magnetic conductor portion 210a and the second main magnetic conductor portion 210b are substantially parallel to the irradiation direction of the electron beam. It has a plurality of secondary magnetic conductor portions 206 provided so as to protrude in the direction. The second multi-axis electron lens 24, the third multi-axis electron lens 34, the fourth multi-axis electron lens 36, and the fifth multi-axis electron lens 52 have the same configuration as the first multi-axis electron lens described above. May be.
[0018]
The electron beam generator 10 includes a plurality of electron guns 104 and a base material 106 on which the electron guns 104 are formed. The electron gun 104 includes a cathode 12 that generates thermoelectrons and a grid 102 that is formed so as to surround the cathode 12 and stabilizes the thermoelectrons generated at the cathode 12. It is desirable that the cathode 12 and the grid 102 be electrically insulated. In this embodiment, the electron beam generator 10 forms an electron gun array by having a plurality of electron guns 104 on a base material 106 at a predetermined interval.
[0019]
The irradiation switching unit 112 focuses the plurality of electron beams independently, and adjusts the focus of the plurality of electron beams, and deflects each of the plurality of electron beams independently to each other. A blanking electrode array 26 that switches whether or not the beam 44 is irradiated to each electron beam independently and a plurality of openings that allow the electron beam to pass therethrough are deflected by the blanking electrode array 26. An electron beam shielding member 28 for shielding the electron beam. In other examples, the blanking electrode array 26 may be a blanking aperture array device.
[0020]
The wafer projection system 114 focuses the plurality of electron beams independently, a third multi-axis electron lens 34 for reducing the irradiation diameter of the electron beam, and the plurality of electron beams independently focuss the plurality of electron beams. A fourth multi-axis electron lens 36 that adjusts the focal point of the light beam, a deflection unit 38 that deflects a plurality of electron beams to desired positions on the wafer 44 independently of each electron beam, and an objective lens for the wafer 44 And a fifth multi-axis electron lens 52 that focuses a plurality of electron beams independently.
[0021]
The control system 140 includes an overall control unit 130 and an individual control unit 120. The individual control unit 120 includes an electron beam control unit 80, a multi-axis electron lens control unit 82, a shaping deflection control unit 84, a blanking electrode array control unit 86, a deflection control unit 92, and a reflected electron processing unit 94. And a wafer stage control unit 96. The overall control unit 130 is a workstation, for example, and performs overall control of each control unit included in the individual control unit 120. The electron beam control unit 80 controls the electron beam generation unit 10. The multi-axis electron lens control unit 82 supplies the first multi-axis electron lens 16, the second multi-axis electron lens 24, the third multi-axis electron lens 34, the fourth multi-axis electron lens 36, and the fifth multi-axis electron lens 52. To control the current.
[0022]
The shaping deflection control unit 84 controls the first shaping deflection unit 18 and the second shaping deflection unit 20. The blanking electrode array control unit 86 controls the voltage applied to the deflection electrodes included in the blanking electrode array 26. The deflection control unit 92 controls the voltage applied to the deflection electrodes included in the plurality of deflectors included in the deflection unit 38. The backscattered electron processing unit 94 detects the amount of backscattered electrons based on the detection signal output from the electron detection unit 40 and notifies the overall control unit 130 of it. The wafer stage control unit 96 controls the wafer stage driving unit 48 to move the wafer stage 46 to a predetermined position.
[0023]
An operation of the electron beam exposure apparatus 100 according to the present embodiment will be described. First, the electron beam generator 10 generates a plurality of electron beams. The first forming member 14 is formed by passing a plurality of electron beams generated by the electron beam generating unit 10 and applied to the first forming member 14 through a plurality of openings provided in the first forming member 14. To do. In another example, a plurality of electron beams may be generated by further including means for dividing the electron beam generated by the electron beam generator 10 into a plurality of electron beams.
[0024]
The first multi-axis electron lens 16 independently focuses a plurality of rectangular shaped electron beams, and independently adjusts the focus of the electron beam with respect to the second shaping member 22 for each electron beam. The 1st shaping | molding deflection | deviation part 18 deflects each independently so that the several position formed in the rectangular shape in the 1st shaping | molding member 14 may be irradiated to the desired position in a 2nd shaping | molding member.
[0025]
The second shaping deflection unit 20 deflects the plurality of electron beams deflected by the first shaping deflection unit 18 in directions substantially perpendicular to the second shaping member 22 and irradiates the second shaping member 22. The second molding member 22 including a plurality of openings having a rectangular shape has a desired cross-sectional shape to be irradiated on the wafer 44 with a plurality of electron beams having a rectangular cross-sectional shape irradiated on the second molding member 22. Further shaping into an electron beam.
[0026]
The second multi-axis electron lens 24 focuses a plurality of electron beams independently, and independently adjusts the focus of the electron beam with respect to the blanking electrode array 26. The plurality of electron beams whose focal points are adjusted by the second multi-axis electron lens 24 pass through the plurality of apertures included in the blanking electrode array 26.
[0027]
The blanking electrode array control unit 86 controls whether or not to apply a voltage to the deflection electrodes provided in the vicinity of each aperture in the blanking electrode array 26. The blanking electrode array 26 switches whether to irradiate the wafer 44 with the electron beam based on the voltage applied to the deflection electrode.
[0028]
The electron beam that is not deflected by the blanking electrode array 26 passes through the third multi-axis electron lens 34. The third multi-axis electron lens 34 reduces the electron beam diameter of the electron beam that passes through the third multi-axis electron lens 34. The reduced electron beam passes through an opening included in the electron beam shielding member 28. The electron beam shielding member 28 shields the electron beam deflected by the blanking electrode array 26. The electron beam that has passed through the electron beam shielding member 28 is incident on the fourth multi-axis electron lens 36. The fourth multi-axis electron lens 36 individually focuses the incident electron beams and adjusts the focus of the electron beams with respect to the deflecting unit 38. The electron beam whose focus is adjusted by the fourth multi-axis electron lens 36 is incident on the deflecting unit 38.
[0029]
The deflection control unit 92 controls a plurality of deflectors included in the deflection unit 38 and independently deflects each electron beam incident on the deflection unit 38 to a position where the wafer 44 is to be irradiated. The fifth multi-axis electron lens 52 adjusts the focal point of each electron beam passing through the fifth multi-axis electron lens 52 with respect to the wafer 44. Each electron beam having a cross-sectional shape to be irradiated to the wafer 44 is irradiated to a desired position to be irradiated to the wafer 44.
[0030]
During the exposure process, the wafer stage drive unit 48 preferably continuously moves the wafer stage 46 in a certain direction based on an instruction from the wafer stage control unit 96. Then, in accordance with the movement of the wafer 44, the cross-sectional shape of the electron beam is formed into a shape to be irradiated onto the wafer 44, an aperture through which the electron beam to be irradiated onto the wafer 44 is passed, and each electron is deflected by the deflection unit 38. By deflecting the beam to a position to be irradiated on the wafer 44, a desired circuit pattern can be exposed on the wafer 44.
[0031]
FIG. 3 shows a top view of the first multi-axis electron lens 16 according to an embodiment of the present invention. The second multi-axis electron lens 24, the third multi-axis electron lens 34, the fourth multi-axis electron lens 36, and the fifth multi-axis electron lens 52 included in the electron beam exposure apparatus 100 are also the first multi-axis electron lens. The configuration of the multi-axis electron lens will be described below based on the configuration of the first multi-axis electron lens 16 as a representative.
[0032]
The first multi-axis electron lens 16 includes a lens unit 202 and a coil unit 200 that is provided around the lens unit 202 and generates a magnetic field. The lens unit 202 includes a lens opening 204 through which an electron beam passes, and a sub magnetic conductor 206 provided in the lens opening 204. The lens openings 204 through which each electron beam passes are preferably arranged corresponding to the positions of the plurality of apertures included in the blanking electrode array 26 and the plurality of deflectors included in the deflection unit 38. In this example, the lens opening 204, the aperture, and the deflector are arranged on substantially the same axis.
[0033]
FIG. 4 shows a cross-sectional view of the first multi-axis electron lens 16 according to an embodiment of the present invention. The second multi-axis electron lens 24, the third multi-axis electron lens 34, the fourth multi-axis electron lens 36, and the fifth multi-axis electron lens 52 may have the same configuration as the first multi-axis electron lens 16. Hereinafter, the configuration of the multi-axis electron lens will be described based on the configuration of the first multi-axis electron lens 16 as a representative.
[0034]
As shown in FIG. 4A, the coil unit 200 includes a coil unit magnetic conductor member 212 that is a magnetic conductor member, and a coil 214 that generates a magnetic field. The lens unit 202 includes a plurality of first main magnetic conductor portions 210a including a plurality of first openings 204a through which a plurality of electron beams pass, and a plurality of electrons arranged substantially parallel to the first main magnetic conductor portions 210a. A main magnetic conductor member 210 having a second main magnetic conductor 210b including a plurality of second openings 204b through which the beam passes, and the first opening 204a project in a direction substantially parallel to the electron beam irradiation direction. The plurality of first sub magnetic conductor portions 206a provided in this manner and the plurality of second sub magnetic conductor portions provided so as to protrude in a direction substantially parallel to the electron beam irradiation direction around the second opening 204b 206b.
[0035]
It is preferable that the first main magnetic conductor portion 210a and the second main magnetic conductor portion 210b have substantially the same shape and size. Moreover, it is preferable that the 1st submagnetic conductor part 206a and the 2nd submagnetic conductor part 206b are cylindrical shapes. In the present example, the first secondary magnetic conductor portion 206a is provided inside the first opening 204a, and the second secondary magnetic conductor portion 206b is provided inside the second opening 204b. The opening of the first sub magnetic conductor 206 and the opening of the second sub magnetic conductor 206b form a lens opening 204 through which the electron beam passes. In the lens opening 204, a magnetic field is formed by the first secondary magnetic conductor portion 206a and the second secondary magnetic conductor portion 206b. The electron beam incident on the lens opening 204 is focused independently under the influence of a magnetic field generated between the first sub magnetic conductor portion 206a and the second sub magnetic conductor portion 206b.
[0036]
The distance between the predetermined first sub magnetic conductor portion 206a and the second sub magnetic conductor portion 206b facing the predetermined first sub magnetic conductor portion 206a is different from that of the other first sub magnetic conductor portion 206a. The distance between the first sub magnetic conductor portion 206a and the second sub magnetic conductor portion 206b facing the first sub magnetic conductor portion 206a may be different. As shown in FIG. 4B, the main magnetic conductor portion 210 is formed in each lens opening 204 by having a first sub magnetic conductor portion 206a and a second sub magnetic conductor portion 206b having different intervals. The strength of the magnetic field 220 can be adjusted. That is, the intensity of the magnetic field 200 formed in each lens opening 204 can be made uniform. Further, the lens axis formed in each lens opening 204 can be oriented in a direction substantially parallel to the electron beam irradiation direction. Furthermore, a plurality of electron beams passing through each lens opening 204 can be focused on substantially the same surface.
[0037]
For example, when the magnetic field strength formed in the lens opening 204 is stronger at the outer periphery than at the center of the main magnetic conductor 210, the predetermined first sub-magnetic conductor 206a and the predetermined first sub-conductor The distance between the magnetic conductor portion 206a and the second secondary magnetic conductor portion 206b facing the other first secondary magnetic conductor portion 206a provided farther from the coil portion 200 than the predetermined first secondary magnetic conductor portion 206a. It is preferable that the distance is larger than the distance between the second sub magnetic conductor portion 206b facing the other first sub magnetic conductor portion 206a. Further, the distance between each of the first sub magnetic conductor portions 206a and each of the second sub magnetic conductor portions 206b is the central axis of the region where the plurality of second openings 204b are provided in the second main magnetic conductor portion 210b. Is preferably substantially symmetric with respect to
FIG. 5 shows a cross-sectional view of another example of the first multi-axis electron lens 16 according to an embodiment of the present invention. As shown in FIG. 5A, the first multi-axis electron lens 16 includes a first sub-magnetic conductor portion 206a and a second sub-magnetic conductor provided on substantially the same axis as the first sub-magnetic conductor portion 206a. You may have the nonmagnetic conductor part 208 provided in the circumference | surroundings with the part 206b. By providing the nonmagnetic conductor portion 208 around the first submagnetic conductor portion 206a and the second submagnetic conductor portion 206b, the coaxiality between the first submagnetic conductor portion 206a and the second submagnetic conductor portion 206b can be accurately adjusted. Can be controlled. Further, it is desirable that the nonmagnetic conductor portion 208 is provided so as to be sandwiched between the first submagnetic conductor portion 206a and the second submagnetic conductor portion 206b. By providing the nonmagnetic conductor portion 208 so as to be sandwiched between the first submagnetic conductor portion 206a and the second submagnetic conductor portion 206b, the distance between the first submagnetic conductor portion 206a and the second submagnetic conductor portion 206b is increased. It can be controlled with high accuracy. Further, the nonmagnetic conductor portion 208 may be provided so as to be sandwiched between the first main magnetic conductor portion 210a and the second main magnetic conductor portion 210b. By providing the nonmagnetic conductor portion 208 so as to be sandwiched between the first main magnetic conductor portion 210a and the second main magnetic conductor portion 210b, the nonmagnetic conductor portion 208 has the first main magnetic conductor portion 210a and the second main magnetic conductor portion. It has a function as a spacer with the conductor part 210b.
[0039]
As shown in FIG. 5B, the lens unit 202 may be provided with a sub magnetic conductor 206 on at least one of the first main magnetic conductor 210a and the second main magnetic conductor 210b. In the present embodiment, the lens unit 202 includes a plurality of first main magnetic conductor portions 210a including a plurality of first openings 204a through which a plurality of electron beams pass, and a plurality of lens portions 202 are arranged substantially parallel to the first main magnetic conductor portions 210a. A main magnetic conductor member 210 having a second main magnetic conductor portion 210b including a plurality of second openings 204b through which the electron beam passes, and a direction substantially parallel to the irradiation direction of the electron beam around the second opening 204b. And a plurality of second sub-magnetic conductor portions 206b provided so as to protrude. At this time, the first opening 204a of the first main magnetic conductor 210a and the opening of the second sub magnetic conductor 206b form a lens opening 204 through which the electron beam passes. Moreover, it is preferable that the 1st opening part 204a of the 1st main magnetic conductor part 210a and the opening part of the 2nd submagnetic conductor part 206b are substantially equal magnitude | sizes.
[0040]
Further, the lens unit 202 may include a plurality of second sub magnetic conductor portions 206b having different intervals from the first main magnetic conductor portion 210a. A plurality of second sub magnetic conductor portions 206b having different intervals from the first main magnetic conductor portion 210a are provided in the second main magnetic conductor portion 210b, thereby adjusting the strength of the magnetic field formed in each lens opening 204. can do. That is, the intensity of the magnetic field formed in each lens opening 204 can be made uniform. Further, the magnetic field formed in each lens opening 204 can be distributed substantially symmetrically with respect to the central axis of the lens opening 204. Furthermore, a plurality of electron beams passing through each lens opening 204 can be focused on substantially the same surface.
[0041]
For example, when the magnetic field strength formed in the lens opening 204 is stronger in the outer peripheral portion than in the central portion of the main magnetic conductor portion 210, the predetermined second sub magnetic conductor portion 206b and the second main magnetic conductor portion The distance from 210a is larger than the distance between the second main magnetic conductor part 210a and the other second sub magnetic conductor part 206b provided farther from the coil part 200 than the predetermined second sub magnetic conductor part 206b. It is preferable. Further, the distance between each of the second secondary magnetic conductor portions 206b and the first main magnetic conductor portion 210a is relative to the central axis of the region where the plurality of first openings 204a are provided in the first main magnetic conductor portion 210a. Are preferably substantially symmetrical.
[0042]
As shown in FIG. 5C, the first sub magnetic conductor portion 206a is provided on the surface of the first main magnetic conductor portion 210a facing the second main magnetic conductor portion 210b, and the second sub magnetic conductor portion 206b is The second main magnetic conductor portion 210b may be provided on the surface facing the first main magnetic conductor portion 210a. At this time, the openings of the first sub-magnetic conductor portion 206a and the second sub-magnetic conductor portion 210b correspond to the first opening portion 204a of the first main magnetic conductor portion 210a and the second opening portion 204b of the second main magnetic conductor portion 210b. Is preferably approximately equal to The opening of the first submagnetic conductor 206a, the opening of the second submagnetic conductor 206b, and the opening of the nonmagnetic conductor 208 form a lens opening 204 through which the electron beam passes.
[0043]
As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. Various changes or improvements can be added to the above embodiment. It is apparent from the description of the scope of claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.
[0044]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to provide an electron beam exposure apparatus and an electron lens capable of focusing a plurality of electron beams independently and accurately.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a multi-axis electron lens 300 in a conventional electron beam exposure apparatus.
FIG. 2 is a view showing a configuration of an electron beam exposure apparatus 100 according to an embodiment of the present invention.
FIG. 3 is a top view of a first multi-axis electron lens 16 according to an embodiment of the present invention.
4 is a cross-sectional view of a first multi-axis electron lens 16 according to an embodiment of the present invention. FIG.
FIG. 5 is a cross-sectional view of another example of the first multi-axis electron lens 16 according to an embodiment of the present invention.
[Explanation of symbols]
8 .. Casing 10... Electron beam generating section 14... First molding member 16... First multi-axis electron lens 18... First molding deflection section 20. 22 .. Second molded member 24.. Second multi-axis electron lens 26.. Blanking electrode array 28.. Electron beam shielding member 34.. Third multi-axis electron lens 36. Axis electron lens, 38 ... deflection unit, 40 ... electron detector, 44 ... wafer, 46 ... wafer stage, 48 ... wafer stage drive unit, 52 ... fifth multi-axis electron lens, 80 ... electron Beam control unit, 82 .. Multi-axis electron lens control unit, 84 .. Shaping deflection control unit, 86 .. Blanking electrode array control unit, 92 .. Deflection control unit, 94 .. Reflected electron processing unit, 96. Wafer stage controller, 100 ... Electron beam exposure device, 104 Electron gun, 110 ... Electron beam shaping means, 112 ... Irradiation switching means, 114 ... Wafer projection system, 120 ... Individual control system, 130 ... Control unit, 140 ... Control system, 150 ... Exposure , 200 ·· coil portion, 202 · · lens portion, 204 · · lens opening portion, 204a · · first opening portion, 204b · · second opening portion, 206 · · auxiliary magnetic conductor portion, 206a · · · first Sub magnetic conductor part 206b ··· Second sub magnetic conductor part 208 · · Non magnetic conductor part 210 · · Main magnetic conductor part 210a · · · First main magnetic conductor part 210b · · · Second main magnetic conductor part , 212 .. Coil part magnetic conductor member, 214 .. Coil, 220 .. Magnetic field

Claims (12)

An electron beam exposure apparatus that exposes a wafer with a plurality of electron beams,
An electron beam generator for generating the plurality of electron beams;
An electron lens unit that focuses each of the plurality of electron beams independently;
The electron lens unit is
A first main magnetic conductor portion including a plurality of first openings through which the plurality of electron beams pass;
Disposed flat row with respect to the first main magnetic conductor portion, a second main magnetic conductor section including a second opening plurality of said plurality of electron beams pass,
In the first main magnetic conductor portion, around the first opening, that having said electron beam first sub magnetic conductor portions plurality of which are provided so as to project flat row direction to the irradiation direction of the A featured electron beam exposure apparatus.   2. The electron beam exposure apparatus according to claim 1, wherein the electron lens portion includes the plurality of first sub magnetic conductor portions having different intervals from the second main magnetic conductor portion.   3. The electron beam exposure according to claim 2, wherein the electron lens portion further includes a coil portion provided around the first main magnetic conductor portion and the second main magnetic conductor portion to generate a magnetic field. apparatus.   The distance between the predetermined first sub magnetic conductor portion and the second main magnetic conductor portion is another first sub magnetic conductor disposed at a position farther from the coil portion than the predetermined first sub magnetic conductor portion. 4. The electron beam exposure apparatus according to claim 3, wherein a distance between the first main magnetic conductor and the second main magnetic conductor is larger. The electron lens unit, in the second main magnetic conductor portion, wherein the periphery of the second opening, the electron beam plurality of second sub-magnetic conductor arranged so as to project flat row direction to the irradiation direction of the The electron beam exposure apparatus according to claim 1, further comprising a unit. An interval between the predetermined first submagnetic conductor portion and the predetermined second submagnetic conductor portion facing the predetermined first submagnetic conductor portion is different from the other first submagnetic conductor portions, 6. The electron beam exposure apparatus according to claim 5, wherein the distance is different from the distance between the other second sub-magnetic conductor portion facing the other first magnetic conductor portion. An interval between the predetermined first sub magnetic conductor portion and the predetermined second sub magnetic conductor portion is the other first sub magnetic conductor disposed at a position farther from the coil portion than the predetermined first sub magnetic conductor portion. 7. The electron beam exposure apparatus according to claim 6, wherein a distance between the magnetic conductor portion and the other second sub magnetic conductor portion is larger. The electron lens portion further includes a nonmagnetic conductor portion provided around the first submagnetic conductor portion and the second submagnetic conductor portion provided on the same axis as the first submagnetic conductor portion. 6. The electron beam exposure apparatus according to claim 5, further comprising: 9. The electron beam exposure apparatus according to claim 8, wherein the nonmagnetic conductor portion is sandwiched between the first submagnetic conductor portion and the second submagnetic conductor portion. An electronic lens for focusing a plurality of electron beams independently,
A first main magnetic conductor portion including a plurality of first openings through which the plurality of electron beams pass;
Disposed flat row with respect to the first main magnetic conductor portion, a second main magnetic conductor section including a second opening plurality of said plurality of electron beams pass,
In the first main magnetic conductor portion, around the first opening, in that it comprises a said electron beam first sub magnetic conductor portions plurality of which are provided so as to project flat row direction to the irradiation direction of the Features an electronic lens.   11. The electron lens according to claim 10, comprising the plurality of first sub-magnetic conductor parts having different intervals from the second main magnetic conductor part.   In the second main magnetic conductor portion, a plurality of second sub magnetic conductor portions provided around the second opening portion so as to protrude in a direction parallel to the irradiation direction of the electron beam.
The electron lens according to claim 10, further comprising:

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