JP2002184912A - Semiconductor device and module thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem that the temperature of reading/writing amplification IC rises, reading/writing speed largely drop and the characteristic of a hard disk itself is largely affected since the heat dissipation of reading/writing IC is poor in the hard disk mounting FCA where reading/writing amplification IC is fixed. SOLUTION: A heat dissipating electrode 15 is exposed to the rear face of insulating resin 13, and a metallic board 23 is fixed to the heat dissipating electrode 15. The rear face of the metallic board 23 is positioned on a substantial face with the rear face of a flexible sheet and it can easily be fixed with a second support member 24. Thus, heat generated from the semiconductor element can satisfactorily be discharged through the heat dissipating electrode 15, the metallic board 23 and the second support member 24.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a semiconductor module, and more particularly to a structure of a semiconductor device and a semiconductor module which can satisfactorily emit heat from a semiconductor element and buffer a stress acting on a solder electrode. is there.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been increasingly used in portable equipment and small-sized, high-density packaging equipment, and are required to be light, thin, small, and heat-dissipating. Moreover, the semiconductor device is mounted on various substrates, and as a semiconductor module including this substrate,
It is implemented in various devices. The substrate may be a ceramic substrate, a printed substrate, a flexible sheet, a metal substrate, a glass substrate, or the like. Here, an example will be described below as a semiconductor module mounted on the flexible sheet.

FIG. 23 shows a semiconductor module using a flexible sheet mounted on a hard disk 100. The hard disk 100 is, for example, manufactured by Nikkei Electronics on June 16, 1997 (No. 6).
91) P92 ~.

The hard disk 100 is mounted on a box 101 made of metal. A plurality of recording disks 102 are integrally attached to a spindle motor 103, and a magnetic head 104 is provided on the surface of each recording disk 102. It is arranged with only a gap. The magnetic head 104 is attached to the tip of a suspension 106 fixed at the end of an arm 105. Then, the magnetic head 104, the suspension 106, the arm 1
05 are integrated, and the integrated
7 is attached.

[0005] The recording disk 102 is
In order to perform writing and reading via the data line 04, it is necessary to be electrically connected to the read / write amplification IC 108. Therefore, a semiconductor module 110 in which the read / write amplifying IC 108 is mounted on the flexible sheet 109 is used, and the wiring provided on the flexible sheet 110 is finally electrically connected to the magnetic head 104. This semiconductor module 110 is called a flexible circuit assembly, and is generally abbreviated as FCA.

On the back surface of the box 101, a connector 111 attached to the semiconductor module 110 is exposed, and this connector (male or female) 111 and a connector (female or male) attached to the main board 112 are provided. Type) is connected. Also this main board 112
Are provided with wiring, a driving IC for the spindle motor 103, a buffer memory, and other driving ICs.
For example, an ASIC or the like is mounted.

For example, the recording disk 102 rotates at 4500 rpm via a spindle motor 103, and the position of the magnetic head 104 is determined by an actuator 107. Since the rotating mechanism is hermetically closed by a lid provided on the box 101, heat is inevitably retained, and the temperature of the read / write amplification IC 108 rises. Therefore, the read / write amplification IC 108 is attached to a portion having excellent heat conduction such as the actuator 107 and the box 101. The rotation of the spindle motor 103 is 5400, 720
The speed tends to be high at 0, 10000 rpm, and this heat radiation becomes more and more important.

To further explain the above-mentioned FCA, its structure is shown in FIG. FIG. 24A is a plan view, and FIG. 24B is a cross-sectional view, in which a portion of the read / write amplifying IC 108 provided at the tip is cut by AA line. Since the FCA 110 is bent and attached to a part of the inside of the box 101, the first flexible sheet 109 having a planar shape that is easily bent is employed.

At the left end of the FCA 110 is a connector 1
11 is attached to form a first connection portion. A first wiring 121 electrically connected to the connector 111 is attached to the first flexible sheet 109 and extends to the right end. The first wiring 121 is electrically connected to the read / write amplification IC 108. Also,
The lead 122 of the amplifying IC 108 connected to the magnetic head 104 is connected to the second wiring 123, and the second wiring 123 is provided on the arm 105 and the second flexible sheet 124 provided on the suspension 106. Third
Is electrically connected to the wiring 126. That is, the right end of the first flexible sheet 109 becomes the second connection portion 127, and is connected to the second flexible sheet 124 here. Note that the first flexible sheet 109 and the second flexible sheet 124 may be provided integrally.
In this case, the second wiring 123 and the third wiring 126 are provided integrally.

A support member 128 is provided on the back surface of the first flexible sheet 109 on which the read / write amplification IC 108 is provided. As the support member 128, a ceramic substrate or an Al substrate is used. This support member 128
Is thermally coupled to the metal exposed inside the box 101, and the heat of the read / write amplification IC 108 is released to the outside.

Next, a connection structure between the read / write amplification IC 108 and the first flexible sheet 109 will be described with reference to FIG. 24B.

The flexible sheet 109 includes a first polyimide sheet 130 (hereinafter, referred to as a first PI sheet), a first adhesive layer 131, and a conductive pattern 13 from below.
2, a second adhesive layer 133 and a second polyimide sheet 134 (hereinafter referred to as a second PI sheet) are laminated, and the first and second PI sheets 130 and 134 have conductive patterns 1
32 are sandwiched.

Further, since the read / write amplification IC 108 is connected, the second PI sheet 134 at a desired position and the second PI sheet 134 are connected to each other.
The adhesive layer 133 is removed, and an opening 135 is formed, where the conductive pattern 132 is exposed. Then, as shown in the figure, the read / write amplifying IC 108 is electrically connected via the lead 122.

[0014]

In FIG. 24B, the semiconductor device packaged with the insulating resin 136 is released to the outside through a heat radiation path shown by an arrow. In particular, the insulating resin 136 becomes a heat resistor. In total, the heat generated from the read / write amplification IC 108 cannot be efficiently released to the outside.

A description will be given of a hard disk. The read / write transfer rate of this hard disk is 500 MHz to 1
GHz and even higher frequencies are required, and the read / write speed of the read / write IC 108 must be increased. For this purpose, the read / write amplification IC 108
It is necessary to shorten the route of the wiring on the flexible sheet connected to the IC, and prevent the temperature of the read / write amplification IC 108 from rising.

In particular, the recording disk 102 rotates at a high speed,
Moreover, since the space is closed by the box 101 and the lid,
Inside, the temperature rises to about 70 to 80 degrees. on the other hand,
The allowable operating temperature of a general IC is about 125 degrees, and the temperature of the read / write amplification IC 125 is allowed to rise from the internal temperature of 80 degrees to about 45 degrees. However, as shown in the drawing, if the thermal resistance of the semiconductor device itself and the thermal resistance of the FCA are large, the read / write amplification IC 108 immediately exceeds the allowable operating temperature, and cannot achieve its original capability. Therefore, a semiconductor device and FCA having excellent heat dissipation properties are required.

In addition, since the operating frequency is further increased in the future, there is a problem that the temperature of the read / write amplifying IC 108 itself rises due to heat generated by the arithmetic processing. At room temperature, despite achieving the desired operating frequency,
Inside the hard disk, the operating frequency had to be reduced due to the rise in temperature.

As described above, with the increase in the operating frequency in the future, semiconductor devices and semiconductor modules (FCAs) have been required to have more heat dissipation.

On the other hand, the actuator 107 itself, the arm 105 attached thereto and the suspension 10
6 and the magnetic head 104 should be as light as possible to reduce the moment of inertia. In particular, when the read / write amplification IC 108 is mounted on the surface of the actuator 107 as shown in FIG.
Lightening of C108 and FCA110 were also required.

[0020]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and firstly, a semiconductor element is sealed face-down integrally with an insulating resin, and a back surface of the semiconductor element is sealed. A semiconductor device in which a pad electrically connected to a bonding electrode and a heat radiation electrode located on a surface of the semiconductor element are exposed, and an exposed portion of the heat radiation electrode is
The problem is solved by providing a metal plate so as to protrude from the back surface of the pad.

Since the protruding metal plate is located at the same position as the back surface of the flexible sheet as the first support member, the metal plate is bonded or abutted to the inside of the housing, particularly to a portion having a flat surface, a heat sink, or the like. A structure that can be used. Therefore, heat of the semiconductor element can be transmitted to the heat sink.

Second, the problem is solved by arranging the back surface of the pad and the back surface of the electrode for heat radiation on substantially the same plane.

Third, the problem can be solved by fixing the semiconductor element and the heat radiation electrode with an insulating material.

Fourth, the problem is solved by fixing the heat radiation electrode and the metal plate with an insulating material or a conductive material.

Fifth, the problem is solved by forming the heat radiation electrode and the metal plate integrally from the same material.

Sixth, the problem is solved by making the back surface of the insulating resin project from the back surface of the pad.

Seventh, the problem is solved by drawing the same curved surface between the side surface of the pad and the back surface of the insulating resin extending from the side surface of the pad.

Eighth, a first support member provided with a conductive pattern and a semiconductor element electrically connected to the conductive pattern are integrally sealed face down with an insulating resin. A semiconductor module having a pad electrically connected to a bonding electrode of the semiconductor element and a semiconductor device having a heat-dissipating electrode located on a surface of the semiconductor element, the semiconductor module being provided on the first support member; The conductive pattern and the pad are electrically connected to each other, an opening is provided in the first support member corresponding to the electrode for heat dissipation, and the opening is fixed to the electrode for heat dissipation. The problem is solved by providing a metal plate.

Ninth, on the back surface of the first support member,
The problem is solved by attaching a second support member to which the metal plate is fixed.

Tenth, the problem is solved by forming the heat radiation electrode and the metal plate integrally from the same material.

Eleventh, the second metal plate corresponds to the second metal plate.
The support member is provided with a fixing plate made of a conductive material,
The problem is solved by thermally bonding the fixing plate and the metal plate.

Twelfth, the metal plate is mainly made of Cu, the second support member is mainly made of Al, and the fixing plate is mainly made of Cu formed on the second support member. The problem is solved by using a plating film as a material.

A thirteenth problem is solved by that the back surface of the insulating resin projects beyond the back surface of the pad.

Fourteenth, the problem is solved by drawing the same curved surface between the side surface of the pad and the back surface of the insulating resin extending from the side surface of the pad.

Fifteenth, the problem can be solved by the semiconductor element being a read / write amplifying IC for a hard disk.

Sixteenth, the semiconductor element is integrally sealed face down with the insulating resin, and a pad electrically connected to the bonding electrode of the semiconductor element and a wiring integral with the pad are provided on the back surface. An external connection electrode extending through the semiconductor device, wherein a heat-dissipating electrode disposed on the surface of the semiconductor element is exposed, and the exposed portion of the heat-dissipating electrode is located between the back surface of the external connection electrode and The problem is solved by providing a metal plate so as to protrude.

Seventeenth, the problem is solved by arranging the back surface of the external connection electrode and the back surface of the heat radiation electrode on substantially the same plane.

Eighteenth, the problem can be solved by fixing the semiconductor element and the heat radiation electrode with an insulating material.

Nineteenth, the problem is solved by fixing the heat radiation electrode and the metal plate with an insulating material or a conductive material.

Twentiethly, the problem can be solved by forming the heat radiation electrode and the metal plate integrally from the same material.

Twenty-first, the problem is solved by the back surface of the insulating resin protruding from the back surface of the external connection electrode.

Twenty-second, the problem is solved by drawing the same curved surface between the side surface of the external connection electrode and the back surface of the insulating material extending from the side surface of the external connection electrode.

Twenty-third, the first in which the conductive pattern is provided
A support member and a semiconductor element electrically connected to the conductive pattern are sealed integrally with the insulating resin face down, and on the back surface, a pad electrically connected to the bonding electrode of the semiconductor element. A semiconductor module comprising: an external connection electrode provided via wiring integrated with the pad; and a semiconductor device having a heat radiation electrode located on the surface of the semiconductor element exposed. The conductive pattern provided thereon and the external connection electrode are electrically connected to each other, and the first pattern corresponding to the electrode for heat dissipation is provided.
The support member has an opening, and the opening includes
The problem is solved by providing a metal plate fixed to the electrode for heat dissipation.

Twenty-fourth, the problem is solved by attaching a second support member to which the metal plate is fixed on the back surface of the first support member.

Twenty-fifth, the problem can be solved by forming the heat radiation electrode and the metal plate integrally from the same material.

Twenty-sixth, the second metal plate corresponds to the second metal plate.
The support member is provided with a fixing plate made of a conductive material,
The problem is solved by thermally bonding the fixing plate and the metal plate.

Twenty-seventh, the metal plate is mainly made of Cu, the second support member is mainly made of Al, and the fixing plate is mainly made of Cu formed on the second support member. The problem is solved by using a plating film as a material.

The twenty-eighth problem is solved by that the back surface of the insulating bonding means projects beyond the back surface of the external connection electrode.

In the twenty-ninth aspect, the problem is solved by drawing the same curved surface between the side surface of the external connection electrode and the back surface of the insulating bonding means bonded to the external connection electrode.

Thirtieth, the problem is solved by the semiconductor element being a read / write amplifying IC for a hard disk.

Thirty-first, a semiconductor device according to the present invention includes a bonding pad provided corresponding to a bonding electrode of a semiconductor element, an external connection electrode provided on a back surface of the bonding pad, and an area for disposing the semiconductor element. A pad provided on the pad, an external connection electrode for stress buffering provided on the back surface of the pad, a bonding means provided on the pad, and fixed to the bonding means, and electrically connected to the bonding pad. The semiconductor element, and an insulating resin for sealing the semiconductor element so as to expose and integrate the back surface of the pad, the back surface of the external connection electrode, and the back surface of the bonding means, The external connection electrode for buffering is formed sufficiently larger than the external connection electrode,
This problem is solved by buffering and transmitting the stress due to thermal expansion of the insulating resin to the external connection electrode.

Twenty-third, the problem is solved by dividing the pad and the external connection electrode for stress buffer into four.

Thirty-third, a semiconductor device according to the present invention includes a bonding pad provided corresponding to a bonding electrode of a semiconductor element, an external connection electrode provided on a back surface of the bonding pad, and an arrangement area of the semiconductor element. A pad provided on the pad, bonding means provided on the pad, the semiconductor element fixed to the bonding means and electrically connected to the bonding pad; a back surface of the pad; The problem is solved by having an insulating resin sealing the semiconductor element so as to expose and integrate the back surface and the back surface of the bonding means, and the external connection electrode is formed to be elongated.

Thirty-fourth, a semiconductor device according to the present invention provides a bonding pad provided corresponding to a bonding electrode of a semiconductor element, an external connection electrode provided on a back surface of the bonding pad, and an arrangement area of the semiconductor element. A pad provided on the pad, bonding means provided on the pad, the semiconductor element fixed to the bonding means and electrically connected to the bonding pad; a back surface of the pad; The problem is solved by having an insulating resin for sealing the semiconductor element so as to expose and integrate the back surface and the back surface of the bonding means, and that the side surfaces of the external connection electrodes have the same curved surface. .

In the thirty-fifth aspect, the problem is solved by the fact that the external connection electrodes are solder electrodes.

[0056]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention provides a semiconductor device having high heat dissipation, lightness, and small size, and a semiconductor module mounted with the semiconductor device, for example, a semiconductor module mounted on a flexible sheet (hereinafter referred to as FCA). To improve the characteristics of a device on which the FCA is mounted, for example, a hard disk.

Further, according to the present invention, a stress buffering electrode is provided at the center of a semiconductor device, and furthermore, the external connection electrode is formed into a shape without constriction, thereby preventing the external connection electrode from cracking. It is.

First, as an example of a device on which the FCA is mounted, the hard disk 100 is referred to in FIG.
Is shown in FIG. 2 to 16 show a semiconductor device mounted on the FCA or a method of manufacturing the same. FCA
First Embodiment Explaining a Device on Which is Installed The hard disk 100 shown in FIG. 17 described in the section of the related art will be described again as this device.

Since the hard disk 100 is mounted on a computer or the like, it is mounted on the main board 112 as necessary. The main board 112 has a female (or male) connector mounted thereon. Then, the male (or female) connector 111 mounted on the FCA and exposed from the back surface of the box 101 is connected to the connector on the main board 112. In the box 101, a plurality of recording disks 102 as recording media are stacked according to the capacity. The magnetic head 104 is 20 to 30 n
Since the disk flies above the recording disk 102 at about m and is scanned, the interval between the recording disks 102 is set to an interval that does not cause a problem in this scanning. And it is attached to the spindle motor 103 at this interval. The spindle motor 103 is mounted on a mounting board, and a connector arranged on the back of the mounting board has a face protruding from the back of the box 101. This connector is also connected to the connector of the main board 112. Therefore main board 1
12 is a read / write amplification IC 10 for the magnetic head 104.
8, an IC for driving the spindle motor 103, an IC for driving the actuator, a buffer memory for temporarily storing data, an ASIC for realizing a drive unique to the manufacturer, and the like. Of course, other passive elements,
An active element may be mounted.

The wiring connecting the magnetic head 104 and the read / write amplifying IC 108 is considered to be as short as possible, and the read / write amplifying IC 108 is arranged on the actuator 107. However, since the semiconductor device of the present invention to be described below is extremely thin and lightweight, it may be mounted on the arm 105 or the suspension 106 other than the actuator. In this case, as shown in FIG. 1B, the back surface of the semiconductor device 10 is
Of the semiconductor device 10 is thermally coupled to the arm 105 or the suspension 106, and the heat of the semiconductor device 10 is transferred to the arm 105 and the box 1.
01 to the outside.

As shown in FIG. 17, when the read / write amplifying IC 108 is mounted on the actuator 107, a read / write circuit for each channel is formed on one chip so that a plurality of magnetic sensors can read / write. But,
It is only necessary that a read / write circuit dedicated to the magnetic head 104 attached to each suspension 106 be mounted on each suspension. In this way, the wiring distance between the magnetic head 104 and the read / write amplifying IC 108 can be made much shorter than the structure shown in FIG. 18, so that the impedance can be reduced and the read / write speed can be improved. Second Embodiment for Describing Semiconductor Device First, a semiconductor device of the present invention will be described with reference to FIG.
2A is a plan view of the semiconductor device, and FIG.
It is sectional drawing of the AA line.

In FIG. 2, the following components are embedded in the insulating resin 13. That is, the pads 14 and the heat-dissipating electrodes 15 provided in a region surrounded by the pads 14.
In addition, a semiconductor element 16 provided on the electrode 15 for heat dissipation is embedded. The semiconductor element 16 is mounted face-down and fixed to the heat-radiating electrode 15 via an insulating adhesive means 17.
Has been split. The separation groove formed by the four divisions is indicated by reference numeral 18A. If the gap between the semiconductor element 16 and the heat-dissipating electrode 15 is small and the insulative bonding means 17 is difficult to penetrate, a groove shallower than the separation groove 18A is formed on the surface thereof, as shown at 18B. May be formed on the surface.

The bonding electrode 1 of the semiconductor element 16
The pad 9 and the pad 14 are electrically connected via a brazing material such as solder. Note that Au stud bumps may be used instead of solder.

Note that there are other connection methods. For example, a bump may be attached to the bonding electrode 19 of the semiconductor element, and the bump may be connected by ultrasonic waves or pressure welding.
Alternatively, solder, conductive paste, or anisotropic conductive particles may be provided around the pressed bumps. These structures will be described in detail at the end of the section of the embodiment of the invention with reference to FIG.

The back surface of the pad 14 is
, And becomes the external connection electrode 21 as it is, and the side surfaces of the pads 14 are etched non-anisotropically and have a curved structure because they are formed by wet etching here.
An anchor effect is generated by this curved structure.

In this structure, the semiconductor element 16, the plurality of conductive patterns 14, the radiation electrode 15, and the insulating adhesive 1
7. It is composed of five materials of insulating resin 13 for embedding them. In the region where the semiconductor element 16 is arranged, the insulating bonding means 17 is formed on the heat-dissipating electrodes 15, on the pads 14, and between the pads 14, and in particular, on the separation grooves 18 formed by etching. Adhesive means 1
7 is provided, and the back surface of the insulating bonding means is
A is exposed from the back surface. In addition, everything including these is sealed with the insulating resin 13. And insulating resin 1
3. The pads 14,..., The electrodes 15 for heat dissipation, and the semiconductor element 16 are supported by the insulating bonding means 17.

As the insulating bonding means 17, an adhesive made of an insulating material or an underfill material is preferable. In the case of an adhesive, it may be applied to the surface of the semiconductor element 16 in advance and fixed when connecting the pad 14 using an Au bump instead of the solder 20. The underfill material 17 is
After connecting the solder 20 (or bump) and the pad 14,
What is necessary is just to penetrate into the gap.

As the insulating resin, a thermosetting resin such as an epoxy resin, or a thermoplastic resin such as a polyimide resin or polyphenylene sulfide can be used.

The insulating resin 13 may be any resin that can be hardened by using a mold, a resin that can be coated by dip coating and coating.
All resins can be adopted. The conductive pattern 14 may be a conductive foil containing Cu as a main material, a conductive foil containing Al as a main material, a Fe—Ni alloy, a laminate of Al—Cu,
A stacked body of l-Cu-Al or the like can be used. Of course, other conductive materials are also possible. Particularly, a conductive material that can be etched and a conductive material that evaporates by laser are preferable. In consideration of half-etching property, plating formability, and thermal stress, a conductive material mainly made of Cu formed by rolling is preferable.

According to the present invention, the insulating resin 13 and the insulating bonding means 17 are also filled in the separation groove 18, so that the conductive pattern can be prevented from coming off. Further, by performing non-anisotropic etching using dry etching or wet etching as the etching, the side surfaces of the pads 14 can have a curved structure to generate an anchor effect. As a result, a structure in which the pad 14 and the heat radiation electrode 15 do not come off from the insulating resin 13 can be realized.

Further, the back surface of the heat radiation electrode 15 is exposed on the back surface of the package. Therefore, the radiation electrode 15
The back surface of the metal plate 23, the second support member 24 described later, or the fixing plate 25 formed on the second support member 24
And a structure that can be abutted or fixed. Therefore, with this structure, the heat generated from the semiconductor element 16 can be radiated, and the temperature of the semiconductor element 16 can be prevented from rising.
6, the drive current and the drive frequency can be increased.

In the semiconductor device 10A, since the pads 14 and the heat radiation electrodes 15 are supported by the insulating resin 13 which is a sealing resin, a support substrate is not required. This configuration is a feature of the present invention. A conductive path of a conventional semiconductor device is supported by a support substrate (a flexible sheet, a printed circuit board, or a ceramic substrate) or supported by a lead frame, so that a configuration that may not be necessary is added. However, this circuit device has a feature that it is composed of the minimum necessary components and does not require a supporting substrate, so that it is thin and lightweight, and it is inexpensive because the material cost can be suppressed. Therefore, as described in the first embodiment, it can be mounted on the arm or suspension of the hard disk.

The back of the package has pads 14,
The electrode 15 for heat radiation is exposed. When this region is coated with a brazing material such as solder, the electrode 15 for heat dissipation has a larger area, so that the thickness of the brazing material differs and wets. Therefore, an insulating film 26 is formed on the back surface of the semiconductor device 10A,
The thickness of the brazing material is made uniform. Dotted line 2 shown in FIG. 2A
Reference numeral 7 denotes an exposed portion exposed from the insulating film 26. Here, since the back surface of the pad 14 is exposed in a rectangular shape, the same size as the exposed portion is exposed from the insulating film 26.

Therefore, since the wetted portion of the brazing material has substantially the same size, the thickness of the brazing material formed here becomes substantially the same. This is the same after solder printing and after reflow. The same can be said for conductive pastes such as Ag, Au, and Ag-Pd. With this structure, it is possible to accurately calculate how much the rear surface of the metal plate 23 projects from the rear surface of the pad 14.

If the metal plate 23 and the conductive pattern 32 are set on the same surface, both the pad 14 and the heat radiation electrode 15 can be soldered at one time. Also, the electrode 15 for heat radiation
The exposed portion 27 may be formed to be larger than the exposed size of the pad 14 in consideration of the heat dissipation of the semiconductor element.

By providing the insulating film 26, the conductive pattern provided on the first support member 11 can be extended to the back surface of the semiconductor device 10A. In general,
The wiring provided on the first support member 11 side is arranged to bypass the fixing region of the semiconductor device 10A in order to prevent a short circuit, but does not bypass the conductive pattern due to the formation of the insulating film 26. Can be placed in Moreover, insulating resin 1
3. Since the insulating bonding means 17 protrudes from the conductive pattern, the solder S provided on the back surface of the semiconductor device 10A
D does not short-circuit each other. Semiconductor device 10B
Third Embodiment FIG. 3 shows a semiconductor device 10B according to a third embodiment.
Is shown. FIG. 3A is a plan view, and FIG.
It is sectional drawing in the A line. Since the structure is similar to that of FIG. 2, only different portions will be described here.

In FIG. 2, the back surface of the pad 14 directly functions as the external connection electrode 21, but in the present embodiment,
The pad 14 has a wiring 30 formed integrally, a wiring 30
The external connection electrode 31 is formed integrally with the external connection electrode 31.

The rectangle shown by the dotted line is the semiconductor element 16, and the external connection electrode 31 is arranged on the back surface of the semiconductor element 16, and the external connection electrode 31 is arranged in a ring shape as shown in the figure. This arrangement has the same or similar structure as a known BGA.

If the semiconductor element 16 is disposed as it is on the conductive patterns 14, 30, 31 and the heat radiation electrode 15, there is a possibility that both are short-circuited via the back surface of the semiconductor element 16. Therefore, the insulating bonding means 17 should employ only an insulating material, and cannot use a conductive material.

The conductive pattern 3 of the first support member 11
2 is connected to the external connection electrode 31, and the back surface of the pad 14 and the back surface of the wiring 30 are covered with the insulating film 26. A circle indicated by a dotted line on the external connection electrode 31, the electrode 15 for heat dissipation
Are the portions exposed from the insulating film 26.

Further, the radiation electrode 15 is connected to the external connection electrode 3.
1 is extended to the back surface of the semiconductor element 16, so that
It is formed smaller than the heat radiation electrode 15 of FIG. The insulating bonding means 17 covers the heat radiation electrode 15, the external connection electrode 31, and the wiring 30. And the insulating resin 13
Covers the pad 14, the wiring 30, the semiconductor element 16, and the thin metal wire 20.

This embodiment has an advantage that when the number of pads 14 is very large and the size is reduced, the pads 14 can be rearranged as external connection electrodes via wiring, and the size of the external connection electrode 31 can be increased. Further, by providing the wiring, distortion applied to the bonding portion can be reduced. It is particularly preferable to form it in a wavy shape. Semiconductor element 1
6 and the heat-dissipating electrode 15 are fixed by insulating bonding means 17 and are an insulating material. However, if the insulating bonding means is made of a silicone resin mixed with a filler that contributes to heat conduction such as Si oxide or aluminum oxide, the heat of the semiconductor element 16 can be transmitted well to the heat radiation electrode 15.

The distance between the heat radiation electrode 15 and the back surface of the semiconductor element 16 can be made uniform by unifying the diameter of the filler. Therefore, when forming a minute gap in consideration of heat conduction, the gap can be formed by lightly pressing the semiconductor element 16 when the insulating bonding means is in a softened state and hardening as it is. Semiconductor devices 10A, 10B
Fourth Embodiment for Explaining the Manufacturing Method
The only difference is whether the pattern includes the pad 14 and the heat-dissipating electrode 15 or the pattern in which the wiring 30 and the external connection electrode 31 are added thereto. In any case, since it is formed in a convex shape by half etching, it is substantially the same except for this pattern shape.

Here, a method of manufacturing the semiconductor device will be described with reference to the semiconductor device 10B shown in FIG. 4 to 9 correspond to FIG.
It is sectional drawing corresponding to the AA line of A.

First, a conductive foil 40 is prepared as shown in FIG. The thickness is preferably about 10 μm to 300 μm, and here, a rolled copper foil of 70 μm was employed. Then, the conductive foil 40
A conductive film 41 or a photoresist is formed on the surface of the substrate as an etching resistant mask. This pattern is shown in FIG.
A pad 14, wiring 30, external connection electrode 31,
This is the same pattern as the heat radiation electrode 15. When a photoresist is used instead of the conductive film 41, at least a portion corresponding to the pad is formed below the photoresist.
A conductive film such as u, Ag, Pd or Ni is formed.
This is provided to enable bonding. (See FIG. 4 above.) Subsequently, the conductive coating 4
1 or half-etching the conductive foil 40 via a photoresist. The etching depth may be smaller than the thickness of the conductive foil 40. Note that the shallower the etching depth, the finer the pattern can be formed.

Then, by half-etching,
The conductive patterns 14, 30, 31 and the heat radiation electrode 15 appear on the surface of the conductive foil 40 in a convex shape. As described above, the conductive foil 40 used herein is a Cu foil formed mainly by rolling and using Cu as a main material. However, a conductive foil made of Al,
A conductive foil made of an Fe-Ni alloy, a laminate of Cu-Al,
A laminate of Al-Cu-Al may be used. In particular, Al-Cu
The laminate of -Al or Cu-Al-Cu can prevent warpage caused by a difference in thermal expansion coefficient.

Then, an insulating bonding means 17 is provided at a portion corresponding to the rectangular dotted line in FIG. The insulating bonding means 17 is provided on the separation groove 22 between the heat radiation electrode 15 and the external connection electrode 31, the separation groove between the heat radiation electrode 15 and the wiring 30, the separation groove between the wirings 30, and the like. . Reference numeral DM denotes a flow prevention film of the solder SD1 fixed here. If this flow prevention film DM is not provided, the semiconductor element 1
6, the insulating adhesive means 17 cannot be injected between the semiconductor element and the conductive foil, or cleaning cannot be performed. (See FIG. 5 above.) Subsequently, the semiconductor element 16 is fixed to the area where the insulating adhesive means 17 is provided, and the bonding electrode 19 of the semiconductor element 16 and the pad 14 are electrically connected. In the drawing, since the semiconductor element 16 is mounted face down, the solder SD1 is employed as the connection means.

In this bonding, the pads 14 ...
Is integrated with the conductive foil 40, and since the back surface of the conductive foil 40 is flat, it comes into contact with the surface of the bonding machine table. Therefore, if the conductive foil 40 is completely fixed to the bonding table, all the pads 14.
And the solder balls formed on the semiconductor element 16 are all in contact with each other, and can be fixed without a solder defect. The bonding table can be fixed by, for example, providing a plurality of vacuum suction holes on the entire surface of the table. Note that there are other connection methods, and this structure will be described last with reference to FIG.

Further, the height of the semiconductor element 16 is reduced correspondingly by not using a supporting substrate and using solder balls instead of thin metal wires. Therefore, the thickness of the package outer shape described later can be reduced.

When an underfill is used as the insulating bonding means 17, the semiconductor element 16 and the pad 14 are fixed, and thereafter the underfill is permeated. (The above figure 6
Then, the insulating resin 13 is formed in the entire region including the semiconductor element 16. As the insulating resin, thermoplastic,
Either thermosetting may be used.

Further, it can be realized by transfer molding, injection molding, dipping or coating. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as a liquid crystal polymer and polyphenylene sulfide can be realized by injection molding.

In the present embodiment, the thickness of the insulating resin is
It is adjusted so that about 100 μm is covered from the back surface of the semiconductor element. This thickness can be increased or reduced in consideration of the strength of the semiconductor device.
Further, as shown in FIG. 14B, the back surface of the semiconductor element 16 may be exposed. In this case, heat radiation fins can be attached, or heat of the semiconductor element can be directly released to the outside.

In the resin injection, the pad 14, the wiring 30, the external connection electrode 31, and the heat radiation electrode 15 are integrated with the sheet-shaped conductive foil 40. There is no displacement of these copper foil patterns. Moreover, unlike the lead frame, no resin burrs are generated between these conductive patterns.

As described above, the pad 14, the wiring 30, the external connection electrode 31, the heat radiation electrode 15, and the semiconductor element 16 are buried in the insulating resin 13 and the conductive foil below the convex portion. 40 is exposed from the back surface. (See FIG. 7 above.) Subsequently, the conductive foil 40 exposed on the back surface of the insulating resin 13 is removed, and the pad 14 and the wiring 3 are removed.
0, the external connection electrode 31 and the heat radiation electrode 15 are individually separated.

Various methods are conceivable for the separation step. The separation step may be performed by removing the back surface by etching, or may be separated by grinding or grinding. Also,
Both may be adopted. For example, if the insulating resin 13 is cut until the insulating resin 13 is exposed, shavings of the conductive foil 40 and thin burr-like metal that has been thinned outside will bite into the insulating resin 13 and the insulating bonding means 17. There's a problem. Therefore, if they are separated by etching, they can be formed without the metal of the conductive foil 40 penetrating into the surface of the insulating resin 13 or the insulating bonding means 17 located between the Cu patterns. This can prevent a short circuit between patterns at minute intervals.

When one unit constituting the semiconductor device 10B is integrally formed, a dicing step is added after the separation step.

[0097] Here, a dicing apparatus is used to separate the individual pieces, but it is also possible to use a chocolate break, press or cut.

Here, after separating the Cu pattern,
Patterns 14, 30, 31, 1 separated and exposed on the back side
5 is formed, and the insulating film 26 is patterned so that a portion shown by a dotted circle in FIG. 3A is exposed. Thereafter, dicing is performed at a portion indicated by an arrow to cut out the semiconductor device 10B.

The solder 42 may be formed before dicing or after dicing.

According to the above-described manufacturing method, pads, wirings, external connection electrodes, electrodes for heat dissipation, and semiconductor elements are embedded in an insulating resin, so that a package that is light, thin, small and excellent in heat dissipation can be realized.

Incidentally, as shown in FIG. 9, the sealing may be performed by using the insulating bonding means 17 without using the insulating resin 13.
A pattern PTN shown in FIG. 10 indicates a pad, a wiring, and an external connection electrode, and a hatched portion above this indicates a pattern for forming a solder flow prevention film.
At the same time as preventing the flow of the solder, it is also applied to other areas to improve the adhesion of the insulating bonding means. Although A to E are shown as types, other patterns may be employed. Also, a flow prevention film may be formed on the entire conductive foil except for the solder connection portion. Next, effects produced by the above-described manufacturing method will be described.

First, since the conductive pattern is half-etched and supported integrally with the conductive foil, the substrate conventionally used for supporting can be eliminated.

Secondly, since a conductive pattern which has been half-etched into a convex portion is formed on the conductive foil, the conductive pattern can be miniaturized. Therefore, the width and the interval can be reduced, and a package having a smaller planar size can be formed.

Third, since it is composed of a conductive pattern, a semiconductor element, a connecting means, and a sealing material, it can be configured with the minimum necessary, can use as little material as possible, and can greatly reduce the cost. Semiconductor device can be realized.

Fourth, pads, wirings, external connection electrodes, and heat radiation electrodes are formed as projections by half-etching. Since individual separation is performed after sealing, tie bars and suspension leads are unnecessary. Become. Therefore, the formation of the tie bar (suspension lead) and the cutting of the tie bar (suspension lead) are completely unnecessary in the present invention.

Fifth, after the conductive pattern serving as the projection is embedded in the insulating resin, the conductive pattern is separated by removing the conductive foil from the back surface of the insulating resin. As described above, resin burrs generated between the leads can be eliminated.

Sixth, the semiconductor element is fixed to the heat radiation electrode via the insulating adhesive means, and since this heat radiation electrode is exposed from the back surface, the heat generated from the semiconductor device can be reduced.
It is possible to efficiently discharge the heat from the surface of the semiconductor device to the heat radiation electrode. Furthermore, by incorporating a filler such as a Si oxide film or aluminum oxide into the insulating bonding means, the heat dissipation can be further improved. If the filler size is unified, the gap between the semiconductor element 16 and the conductive pattern can be kept constant.

Semiconductor device 10 to which metal plate 23 is fixed
A, 10B, and a fifth embodiment illustrating a semiconductor module using the same. FIG. 1 shows a semiconductor module (FCA) 50. The mounted semiconductor device is
This is the semiconductor device 10B shown in FIG.

First, the first support member 11 made of a flexible sheet will be described. Here, the first from the bottom
PI sheet 51, first adhesive layer 52, conductive pattern 5
3, a second adhesive layer 54 and a second PI sheet 55 are sequentially stacked. When the conductive pattern is formed as a multilayer, an adhesive layer is further used, and the upper and lower conductive patterns may be electrically connected via through holes in some cases. As shown in FIG. 1C, the first support member 11 is formed with a first opening 12 that allows at least the metal plate 23 to be exposed.

Then, so that the conductive pattern is exposed,
A second opening 56 is formed. This second opening 56
May be exposed, or only the connected portions may be exposed. For example, the second
The PI sheet 55 and the second adhesive layer 54 may all be removed, or as shown in the figure, the second PI sheet 55
May be removed, and a portion where only the second adhesive layer 54 is exposed may be removed. In this case, the solder 27 does not flow.

The semiconductor device according to the present invention has
Is to adhere the metal plate 23 to the back surface of the substrate. Further, in the semiconductor module of the present invention, the rear surface of the first support member and the metal plate 23 are located substantially at the same surface position.

The thickness of the metal plate 23 is determined in consideration of the thickness of the first support member 11 and the fixing plate 25. When the pad 14 and the conductive pattern 32 are fixed via the solder 27, the metal plate 2 exposed from the first opening 12 is formed.
Each thickness is determined so that 3 is substantially the same as the back surface of the first support member 11. Therefore, it is possible to make contact with the second support member, and it is also possible to make contact with and fix to the second support member having the fixing plate 25.

Several examples of this connection structure will be specifically described.

In the first example, as the second support member 24,
A lightweight metal plate such as Al, stainless steel or the like or a ceramic substrate is adopted, and the metal plate 23 fixed to the back surface of the semiconductor device 10 is brought into contact therewith. That is, the structure is such that the second support member 24 is directly contacted without the interposition of the fixing plate 25. Then, the heat-dissipating electrode 15 and the metal plate 23, and the metal plate 23 and the second support member 24 are fixed by selecting a brazing material such as solder or an insulating bonding means containing filler and having excellent heat conductivity. .

In the second example, as the second support member 24,
A light metal plate such as Al or stainless steel or a ceramic substrate is employed, and a fixing plate 25 is formed thereon.
5 and a metal plate 23 are fixed.

For example, when Al is used as the second support member 24, the fixing plate 25 is preferably made of Cu. This is A
This is because Cu plating can be performed on l. The film thickness is
It may be about 10 to 10 μm. In addition, since it is a plated film, it can be formed in close contact with the second support member 24, and the thermal resistance between the fixing plate 25 and the second support member 24 can be extremely small. Alternatively, a conductive paste may be applied as the fixing plate 25, and may be used as a substitute.

On the other hand, the fixing plate 25 made of Cu and the Al substrate can be fixed with an adhesive, but in this case,
Thermal resistance increases.

When a ceramic substrate is used as the second support member 24, the fixing plate 25 is formed on an electrode formed by printing and firing a conductive paste.

Incidentally, the second support member 24 and the first support member 11 are fixed by a third adhesive layer 57.

For example, the first PI sheet 51: 25 μm, the second PI sheet 55: 25 μm, the first to third adhesive layers 52, 54, 57: 25 μm (after firing). An acrylic adhesive is used as a material. 27:50 μm Third adhesive layer 57:25 μm An acrylic adhesive is used as the material. Fixing plate 25: about 25 μm. As described above, if the respective film thicknesses are adjusted and determined, after the semiconductor device 10A is fixed to the first support member 11, the fixing plate 25 is easily provided and the competing second support member 24 is bonded. I can do it.

Further, a module in which the second support member 24 is bonded to the first support member 11 is prepared, and the semiconductor device 10 is arranged in the opening 56 formed in this module. Solder can be melted at once, and can be fixed without poor connection.

Therefore, the heat generated from the semiconductor element 16 can be released to the second support member 24 via the heat radiation electrode 15, the metal plate 23, and the fixing plate 25. Moreover, since the thermal resistance is significantly reduced as compared with the conventional structure (FIG. 17B), the drive current and drive frequency of the semiconductor element 16 can be increased. The back surface of the second support member 24 can be attached to the actuator 107, the bottom surface of the box 101, or the arm 105 shown in FIG. Therefore, finally, the heat of the semiconductor element can be released to the outside via the box 101. Therefore, even if the semiconductor module is mounted on the hard disk 100, the semiconductor element itself does not reach a relatively high temperature, and
It is possible to further increase the read / write speed as 0. Note that the FCA may be mounted on a device other than the hard disk. In this case, the second support member is in contact with a member having low thermal resistance. When mounted on another device, a printed circuit board or a ceramic substrate may be used instead of the flexible sheet. Sixth Embodiment for Explaining a Semiconductor Device 10C and a Semiconductor Module 50A That Have a Heat Dissipating Electrode 15 Protruding Instead of the Metal Plate 23 FIG. Electrodes 15 for heat dissipation and fixing plate 25
Shows an integrated structure.

First, this manufacturing method will be described with reference to FIGS. 4 to 8 are the same manufacturing method, and the description up to this point is omitted.

FIG. 12 shows that insulating resin 1 is placed on conductive foil 40.
3 shows a covered state, and a portion corresponding to the electrode 15 for heat dissipation is covered with a photoresist PR. When the conductive foil 40 is etched through the photoresist PR, as shown in FIG.
Can be made to protrude from the back surface of. Note that, instead of the photoresist PR, a conductive film such as Ag or Au may be selectively formed and used as a mask. This coating also functions as an antioxidant film.

In the structure in which the metal plate 23 is bonded as shown in FIG. 1, the workability is very poor because the metal plate 23 is very thin, about 125 μm. However, when the electrode 15A for heat radiation protruded by etching is formed in this way,
The bonding of the metal plate 23 described above is not required.

Then, as shown in FIG. 14, after the pad 14, the wiring 30, and the external connection electrode 31 are completely separated, the insulating film 26 is covered, and the portion where the solder is arranged is exposed. After the solder 42 is fixed, dicing is performed at a portion indicated by an arrow.

The semiconductor device separated here is mounted on the first support member 11 as shown in FIG. Then, as described above, the second support member 24 is fixed. At this time, since the heat radiation electrode 15A protrudes,
It can also be easily joined to the fixing plate 25 via solder or the like.

In FIG. 14B, the back surface of the semiconductor element 16 is exposed from the insulating resin. For example, if the upper surface of the semiconductor element is brought into contact with the upper mold and molded, a sealing structure as shown in the figure can be realized. Seventh description of semiconductor device
Embodiment FIG. 15A is a plan view of a semiconductor device according to the present invention, and FIG. 15B is a cross-sectional view corresponding to line AA of FIG. 15A.

In the present invention, the first heat radiation electrode 70A and the second heat radiation electrode 70B are arranged on substantially the same plane, and a pad 14 is provided around the first heat radiation electrode 70A and the second heat radiation electrode 70B. The back surface of the pad 14 serves as an external connection electrode as it is, and is located immediately below the bonding electrode 19 of the semiconductor chip. Further, as shown in FIG. 3, wiring for rearrangement may be adopted. At least one bridge 71 is provided between the chips. Pads 14 are integrally formed on both ends of the bridge 71,
Are also connected to the bonding electrode 19.

On the first heat radiation electrode 70A,
The first semiconductor chip 16A is fixed, the second semiconductor chip 16B is fixed to the second heat radiation electrode 70B,
They are connected via solder.

As is clear from the above description of the manufacturing method, since the conductive foil is half-etched and molded and supported with the insulating resin 13 before being completely separated, the bridge 71 is not dropped or detached at all. It becomes unnecessary.

As in the present embodiment, the present invention also allows a plurality of chips to be packaged in one package.

As described above, in the embodiments described above, the structure of the read / write amplifying IC has been described in consideration of heat radiation of one IC. However, when various devices are assumed, there may be a case where heat dissipation of a plurality of semiconductor elements must be considered in order to improve the characteristics. Of course, each of them may be packaged, but a plurality of semiconductor elements are connected as shown in FIG.
It may be a package.

Naturally, the metal plate may be connected to the heat-dissipating electrode as shown in FIG. 1 or may have a structure in which the heat-dissipating electrode itself projects as shown in FIG. These are mounted on a flexible sheet or on a flexible sheet to which a second support member is attached.

FIG. 16 shows a method of connecting the bump B formed on the semiconductor element 16 and the pad 14, which can be applied to all the embodiments. Note that P is Au,
It shows a plating film of Ag or the like, and is formed as necessary.

A is an ACP method (an anisotropic conductive paste / film) in which conductive particles are interposed between the bump B and the pad 14 (or the plating film P), and electrical conduction is established by pressing. is there.

B is an SBB method (stand bump bonding) in which the bump B is connected to the pad 14 (or the plating film) and at the same time, the conductive paste CP is disposed around the bump B.

C is an ESP method (epoxy encapsulated solder connection), and bump B
When soldering is fixed, the solder SD is also melted and arranged around it.

D is an arrangement in which insulating bonding means is arranged around the bumps which have been brought into pressure contact by the NCP method (non-conductive paste).

E is a GGI method (Gold Gold Gold
In this case, the Au bump and the Au plating film P are joined by ultrasonic waves.

Finally, F is a solder bump method in which solder bonding is performed, and an insulating adhesive means and an underfill are interposed therebetween. The present application employs this method.

As described above, there are various connection methods, and the connection method is selected in consideration of the connection strength. Such a structure can also be adopted between the back surface of the external connection electrode and the first support member 11. Eighth Embodiment for Describing Semiconductor Device FIG. 17 shows a semiconductor device according to this embodiment. FIG.
FIG. 17A is a plan view, and FIG. 17B is a cross-sectional view taken along line AA when the semiconductor device 10E is mounted on the mounting board 43.

In the above description, the electrodes provided on the back surface of the region of the semiconductor element 16 are provided to enhance the heat radiation effect. However, these electrodes not only have a heat radiation effect, but also have a function of buffering a stress acting on the external connection electrode 21 provided on the periphery of the semiconductor device.

As shown in FIG. 17, this semiconductor device 10E
Is characterized in that the heat-dissipating electrode 1 surrounded by the external connection electrode 21
5 on the back surface of the electrode 5 so as to cover the entire back surface.
1B is provided. That is, the solder electrode 21B having a size larger than that of the external connection electrode 21 is provided. This size may be equal to or larger than the semiconductor element. It may be slightly smaller. The effect of this will be described below. The external connection electrode may be a solder, a solder bump, or a conductive adhesive.

The entire semiconductor device 10 E according to the present invention is supported by the insulating resin 13. Since the thermal expansion coefficients of the mounting substrate 43 and the insulating resin 13 are often different, the difference is made as small as possible. Therefore, when the temperature of both the semiconductor device 10E and the mounting board 43 rises, a stress acts on the external connection electrode 21 connecting them. For example, when the semiconductor device is solder-fixed only by the external connection electrodes, the magnitude of the stress increases as the package size increases. Specifically, it is proportional to the distance from the center of the semiconductor element to the periphery of the semiconductor device.

In the present application, the stress can be relieved by making the stress buffering electrode 21B substantially the same size as the semiconductor element 16. The region is firmly fixed to the mounting substrate by the stress buffering electrode 21B. Therefore, the stress acting on the external connection electrode 21 is the stress buffer electrode 2
This is proportional to the distance from the periphery of 1B to the center of the external connection electrode 21. According to the result of the stress simulation, 2
The maximum stress applied to the external connection electrode 21 by about 5 to 30% is reduced. Therefore, the occurrence of cracks in the external connection electrodes 21 can be prevented. Note that the stress buffering electrode 21B may be slightly larger or slightly smaller than the semiconductor element 16.

FIG. 22 is a graph showing the relationship between the number of cycles (horizontal axis) and the crack occurrence rate (vertical axis) in the heat cycle test. Here, a method of the heat cycle test will be described. First, a semiconductor device mounted on a mounting substrate is exposed to a gas phase via a solder electrode. Next, the temperature of the gas phase is changed, and the number of semiconductor devices having cracks in the solder electrodes due to the temperature change is measured. By performing the above operations, it is possible to evaluate the life of the solder electrode with respect to a temperature change. The range of the temperature change of the gas phase is -40 ° C to 12 ° C.
5 ° C., and the time for one cycle is about 1 hour.

The structure of case 1 and case 2 in FIG. 22 will be described below.

Case 1: The size of the heat radiation electrode is the same as that of the pad back surface exposed through the insulating film. Therefore, a large number of solders are provided on the exposed portions of the heat radiation electrodes, and the solder electrodes are mounted on the mounting board as shown in FIG.

Case 2: In Case 1, the back surface of the heat-dissipating electrode is exposed over substantially the entire area, and the heat-dissipating electrode and the electrode of the mounting board are fixed on the entire surface.

In case 1, the crack generation rate increased from the point where the number of cycles exceeded 250, and reached 100% when the number of cycles reached 400. That is, when the number of cycles reaches 400, cracks have occurred in the solder electrodes of all the semiconductor devices.

In case 2, the crack generation rate increased from the time when the number of cycles exceeded 450, and reached 100% when the number of cycles reached 600.

Thus, it can be said that the semiconductor device of Case 2 has a structure in which solder cracks are less likely to occur than the semiconductor device of Case 1. Therefore, it is more effective to use a large-sized solder electrode having substantially the same size as the chip as the electrode for stress buffering. This is because the distance between the solder electrodes is reduced as described above.

Here, the solder electrode is made of a solder material.
The material here may be a generally-known brazing material, a conductive paste such as Ag or gold, or a conductive adhesive. The material for fixing the heat radiation electrode and the mounting substrate may be an insulating adhesive as long as the heat radiation electrode 15 is not electrically connected to the chip back surface. Ninth Embodiment for Describing Semiconductor Device FIG. 18 shows a semiconductor device according to this embodiment. FIG.
FIG. 18A is a plan view, and FIG. 18B is a sectional view taken along line AA when the semiconductor device 10F is mounted on the mounting board 43.

As shown in FIGS. 18A and 18B, a feature of this semiconductor device 10F is that a stress-releasing electrode 21B is provided on the heat-radiating electrode 15 divided by the groove 44. That is, the back surface of the semiconductor device 10F and the mounting substrate 43 are firmly connected via the stress buffering electrode 21B. Therefore, the stress acting on the external connection electrode 21 is:
This is in proportion to the distance from the periphery of the stress buffering electrode 21B to the center of the external connection electrode 21. Accordingly, when the semiconductor device 10F thermally expands, the stress acting on the external connection electrodes 21 can be buffered, and the occurrence of cracks in the external connection electrodes 21 can be prevented.

Further, by providing the groove 44, the adhesive strength between the insulating adhesive means 17 and the heat radiation electrode 15 can be improved.

Although a cycle test of this structure has not been performed, it is considered that an effect equivalent to that of the structure of FIG. 17 occurs. As the number of divisions of the stress buffering electrode 21B increases, the structure shown in FIG. 2 is obtained, but the number of divisions having this effect is about 2 to 8 at most. By performing this division,
The amount (thickness) of the applied solder is smaller than that of a structure in which the entire surface is fixed, and the mountability is improved. Tenth Embodiment for Describing Semiconductor Device FIG. 19 shows a semiconductor device according to this embodiment. FIG.
FIG. 19A is a plan view thereof, and FIG. 19B is a cross-sectional view taken along line AA when the semiconductor device 10F is mounted on the mounting board 43.

As shown in FIG. 19A, the feature of this semiconductor device is that the external connection electrode 21 has an elongated shape. Again, there are two sources of stress dampening. The first is that the bonding area of the external connection electrode 21 has increased.
The third point is that the distance of occurrence of the crack CK is shortened because the crack occurrence location CK occurs on the outer peripheral portion of the solder and on the semiconductor element side.

In order to prevent solder bridges between the electrodes, the distance between the heat radiation electrode 15 and the pad 14 needs to be about 0.3 m. However, the shortest length of the thin metal wire 20 required for bonding depends on the thickness of the semiconductor element 16 and needs to be about 1 mm to 0.5 mm. For example,
In the semiconductor element 16 having a thickness of 0.33 mm, the shortest length of the thin metal wire is 1 mm. When the thickness of the semiconductor element is 0.1
When the thickness is mm, a minimum length of about 0.5 mm is required.
Therefore, 0.2 mm from the bonding portion of the pad 14
The pad 14 needs to be inserted by about 0.4 mm. In other words, the crack occurrence location CK needs to be as inner as possible, but a certain length is required due to wire bonding restrictions. Moreover, since the number of the pads 14 is small in the drawing, a square can be used.
When a pad exceeding 0 pins is required, the width of the bonding pad needs to be reduced. Therefore, the shape of the pad 14 is necessarily elongated.

As a result, at the same time as the bonding area increases, the location where the crack occurs is located inside, and the occurrence of the crack is suppressed. Eleventh Embodiment for Describing Semiconductor Device FIGS. 20 and 21 show a semiconductor device according to this embodiment. FIG. 20A is a plan view, and FIG. 20B is a cross-sectional view taken along line AA when the semiconductor device 10G is mounted on the mounting board 43. 21A to 21C show the structure of the external connection electrode 21. FIG.

As shown in FIGS. 21A and 21B, the semiconductor device 10
The feature of J lies in the structure of the external connection electrode 21. The problem is that, as shown in FIG.
6 is that no constriction NK is formed. If the external connection electrode 21 does not have the constriction NK, a structure as shown in FIGS. 21A and 21B may be used.

It has been found that stress is easily concentrated in the constriction NK, and cracks are easily generated. Further, in a thin package having a thickness of 0.5 mm or less, the composition ratio of the insulating resin to the constituent materials of the semiconductor device is small due to the thinness, and although it is extreme, the semiconductor element 16 is directly attached. . Silicon which is a material of the semiconductor element 16;
Since the coefficients of thermal expansion of the mounting boards are significantly different, the stress acting on the external connection electrodes 21 connecting the both increases. Therefore, in all embodiments of the present invention, it is important that the solder extending surface has a smooth curved surface without constriction.

Next, the results of the heat cycle test are shown in FIG.
This will be described with reference to FIG. First, the structure of the semiconductor device used in the tests of Cases 3 and 4 will be described.

The external connection electrodes of both the case 3 and the case 4 of the semiconductor device also have no constriction. The difference between the two lies in the structure of the stress buffering electrode. A plurality of electrodes having the same size as the external connection electrodes are provided as the stress buffering electrodes of the semiconductor device of the case 3. The size of the stress buffering electrode of the semiconductor device of Case 4 is about the same as that of the semiconductor element.

In case 3, the test is currently underway.
Even when the number of cycles exceeds 750 times, no solder crack has occurred.

In case 4, the number of cycles is 1400
The crack occurrence rate is 0% even at the time of turning. That is, even if the number of cycles reaches 1400, no crack occurs in the solder electrode.

Next, the difference between the structures of Case 1 to Case 4 will be described.

The difference between the structures of Case 1 and Case 2 lies in the shape of the electrode for stress buffering. The electrode for stress buffering of the case 1 has the same size as the external connection electrode 21. On the other hand, the stress buffering electrode of the case 2 has substantially the same size as the semiconductor element. That is, the case 2 electrode for stress buffering is larger than the case 1 electrode.

The difference between the structures of Case 1 and Case 3 lies in the shape of the external connection electrode. The external connection electrode of the case 1 has a circular and constricted structure. On the other hand, the external connection electrode of the case 2 is elongated and has no constriction.

The difference between the structures of the case 2 and the case 4 lies in the shape of the external connection electrode, although both have a stress buffering electrode having substantially the same size as the semiconductor element. The external connection electrode of the case 2 has a circular and constricted structure. On the other hand, the external connection electrode of the case 4 has an elongated and non-constricted structure.

From this, it can be seen that solder cracks can be prevented by combining the two features of the shape of the stress buffering electrode and the shape of the external connection electrode. That is, the size of the stress buffering electrode is set to be about the same size as the semiconductor element, and the shape of the external connection electrode is made to be slender and has no constriction.

As described above, the feature of the present invention is that the electrode which was originally effective as a heat-dissipating electrode is firmly fixed to the mounting board through soldering, so that the external connection electrode It was found to be effective in preventing cracks.

Further, it has been found that the strength of the external connection electrode can be improved by forming the external connection electrode without a constriction.

As a result, remarkable improvement in the mountability of the thin package is realized, which greatly contributes to the practical use of a light, thin and short package.

In all the embodiments described above, the insulating bonding means 17 was used as the bonding means between the semiconductor element 16 and the heat radiation electrode 15. However, this bonding means is not limited to an insulating means. As long as the back surface electrode of the semiconductor device is not short-circuited, a conductive bonding means may be used.

[0176]

As is apparent from the above description, according to the present invention, a semiconductor plate in which a metal plate is fixed to a heat radiation electrode exposed on the back surface of a package and the metal plate protrudes from the back surface of an external connection electrode or pad. By providing equipment, FC
There is an advantage that mounting on A is easy.

In particular, an opening is provided in the FCA,
The rear surface of the semiconductor device and the heat-dissipating electrode of the semiconductor device are located at the same surface position, thereby facilitating contact with the second support member.

Further, by using Al as the second support member, a fixing plate made of Cu is formed thereon, and a heat radiation electrode or a metal plate is fixed to the fixing plate, so that heat generated from the semiconductor element can be reduced. It can be released to the outside via the second support member.

Therefore, a rise in the temperature of the semiconductor element can be prevented, and a performance close to the original capability can be obtained. In particular, the FCA mounted in the hard disk can efficiently release the heat to the outside, so that the read / write speed of the hard disk can be increased.

Further, by providing a stress buffering electrode having the same size as the semiconductor element on the back surface of the pad in the center of the semiconductor device, the stress acting on the external connection electrode can be reduced. This can prevent the occurrence of solder cracks.

Further, by making the external connection electrodes of the semiconductor device slender and having no constriction, it is possible to buffer the stress acting on the solder electrodes and to improve the strength of the solder electrodes themselves. Can be. Therefore,
Solder cracks can be prevented.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a semiconductor module of the present invention.

FIG. 2 is a diagram illustrating a semiconductor device of the present invention.

FIG. 3 is a diagram illustrating a semiconductor device of the present invention.

FIG. 4 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 5 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 6 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 7 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 8 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 9 is a diagram illustrating a semiconductor device of the present invention.

FIG. 10 is a diagram illustrating a flow prevention film formed on a conductive pattern.

FIG. 11 is a diagram illustrating a semiconductor module of the present invention.

FIG. 12 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 13 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 14 is a diagram illustrating a method for manufacturing a semiconductor device according to the present invention.

FIG. 15 is a diagram illustrating a semiconductor device of the present invention.

FIG. 16 is a diagram illustrating a connection structure between a semiconductor element and a pad.

FIG. 17 illustrates a semiconductor device of the present invention.

FIG. 18 is a diagram illustrating a semiconductor device of the present invention.

FIG. 19 is a diagram illustrating a semiconductor device of the present invention.

FIG. 20 is a diagram illustrating a semiconductor device of the present invention.

FIG. 21 is a diagram illustrating a semiconductor device of the present invention.

FIG. 22 is a diagram illustrating experimental results of a heat cycle using the semiconductor device of the present invention.

FIG. 23 is a diagram illustrating a hard disk.

FIG. 24 is a diagram illustrating a conventional semiconductor module employed in FIG.

[Explanation of symbols]

 Reference Signs List 10 semiconductor device 11 first support member 12 first opening 14 pad 16 semiconductor element 23 metal plate 24 second support member 56 second opening

Continued on the front page (72) Inventor Junji Sakamoto 2-5-5 Keihanhondori, Moriguchi City, Osaka Prefecture Inside Sanyo Electric Co., Ltd. (72) Inventor Yukio Okada 2-5-5 Keihanhondori, Moriguchi City, Osaka Prefecture Inside Sanyo Electric Co., Ltd. (72) Inventor Yusuke Igarashi 2-5-5 Keihanhondori, Moriguchi City, Osaka Prefecture Inside Sanyo Electric Co., Ltd. (72) Eiji Maehara 2-5-5 Keihanhondori, Moriguchi City, Osaka Prefecture No. 5 Sanyo Electric Co., Ltd. (72) Inventor Koji Takahashi 29 Kitacho, Isesaki-shi, Gunma F-term in Kanto Sanyo Electronics Co., Ltd. 5F036 AA01 BB01 BB21 BD01 BD03 BE01 BE09

Claims (35)

[Claims] A semiconductor element is sealed face down integrally with an insulating resin, a pad electrically connected to a bonding electrode of the semiconductor element on a back surface thereof, and a heat radiating member located on a surface of the semiconductor element. And a metal plate is provided on an exposed portion of the heat radiation electrode so as to protrude from a back surface of the pad. 2. The semiconductor device according to claim 1, wherein a back surface of said pad and a back surface of said heat radiation electrode are arranged on substantially the same plane. 3. The semiconductor device and the heat radiation electrode,
The semiconductor device according to claim 1, wherein the semiconductor device is fixed with an insulating material. 4. The semiconductor device according to claim 3, wherein said heat radiation electrode and said metal plate are fixed with an insulating material or a conductive material. 5. The semiconductor device according to claim 1, wherein said heat radiation electrode and said metal plate are integrally formed of the same material. 6. The back surface of the insulating resin protrudes from the back surface of the pad.
The semiconductor device according to any one of the above. 7. The semiconductor device according to claim 6, wherein a side surface of the pad and a back surface of the insulating resin extending from the side surface of the pad have the same curved surface. 8. A first support member provided with a conductive pattern, and a semiconductor element electrically connected to the conductive pattern are integrally sealed face down with an insulating resin, and the semiconductor element is provided on the back surface thereof. A semiconductor device having a pad electrically connected to a bonding electrode of the element and a semiconductor device having a heat-dissipating electrode located on the surface of the semiconductor element, the conductive module being provided on the first support member; A pattern and the pad are electrically connected, an opening is provided in the first support member corresponding to the heat dissipation electrode, and the opening is provided with a metal fixed to the heat dissipation electrode. A semiconductor module comprising a plate. 9. The semiconductor module according to claim 8, wherein a second support member to which said metal plate is fixed is attached to a back surface of said first support member. 10. The semiconductor module according to claim 8, wherein the heat radiation electrode and the metal plate are integrally formed of the same material. 11. The second support member corresponding to the metal plate is provided with a fixing plate made of a conductive material, and the fixing plate and the metal plate are thermally coupled. The semiconductor module according to claim 9 or 10. 12. The metal plate has Cu as a main material, the second support member has Al as a main material, and the fixing plate has Cu as a main material formed on the second support member. 12. The semiconductor module according to claim 11, wherein the semiconductor module comprises a plating film. 13. The semiconductor module according to claim 8, wherein a back surface of said insulating resin projects from a back surface of said pad. 14. The semiconductor module according to claim 13, wherein a side surface of the pad and a back surface of the insulating resin extending from the side surface of the pad have the same curved surface. 15. The semiconductor module according to claim 8, wherein the semiconductor element is a read / write amplification IC for a hard disk. 16. A semiconductor element is sealed face-down with an insulating resin, and a back surface of the semiconductor element is connected to a pad electrically connected to a bonding electrode of the semiconductor element and a wiring integrated with the pad. A semiconductor device in which an extended external connection electrode and a heat-dissipating electrode disposed on the surface of the semiconductor element are exposed, and protruding from an exposed portion of the heat-dissipating electrode beyond a back surface of the external connection electrode. Semiconductor device provided with a metal plate as described above. 17. The semiconductor device according to claim 16, wherein a back surface of said external connection electrode and a back surface of said heat radiation electrode are arranged on substantially the same plane. 18. The semiconductor device according to claim 16, wherein the semiconductor element and the heat radiation electrode are fixed with an insulating material.
Alternatively, the semiconductor device according to claim 17. 19. The semiconductor device according to claim 18, wherein the heat radiation electrode and the metal plate are fixed with an insulating material or a conductive material. 20. The semiconductor device according to claim 18, wherein said heat radiation electrode and said metal plate are integrally formed of the same material. 21. The back surface of the insulating resin projects from the back surface of the external connection electrode.
3. The semiconductor device according to claim 1. 22. The semiconductor device according to claim 21, wherein a side surface of the external connection electrode and a back surface of the insulating material extending from the side surface of the external connection electrode draw the same curved surface. 23. A first support member provided with a conductive pattern, and a semiconductor element electrically connected to the conductive pattern is integrally sealed face down with an insulating resin. A pad electrically connected to the bonding electrode of the element, an external connection electrode provided via wiring integrated with the pad, and a semiconductor device having an exposed heat-dissipating electrode located on the surface of the semiconductor element. A conductive module provided on the first support member and the external connection electrode are electrically connected;
The first support member corresponding to the electrode for heat dissipation includes:
An opening is provided, and a metal plate fixed to the electrode for heat dissipation is provided in the opening. 24. The semiconductor module according to claim 23, wherein a second support member to which said metal plate is fixed is attached to a back surface of said first support member. 25. The heat radiation electrode and the metal plate are integrally formed of the same material.
A semiconductor module according to item 1. 26. The fixing device according to claim 26, wherein a fixing plate made of a conductive material is provided on the second support member corresponding to the metal plate, and the fixing plate and the metal plate are thermally coupled. 26. The semiconductor module according to claim 24 or 25. 27. The metal plate has Cu as a main material, the second support member has Al as a main material, and the fixing plate has Cu as a main material formed on the second support member. 27. The semiconductor module according to claim 26, comprising a plating film. 28. The semiconductor module according to claim 23, wherein a back surface of said insulating adhesive means protrudes from a back surface of said external connection electrode. 29. The semiconductor module according to claim 28, wherein a side surface of the external connection electrode and a back surface of the insulating bonding means bonded to the external connection electrode have the same curved surface. 30. The semiconductor module according to claim 23, wherein said semiconductor element is a read / write amplification IC for a hard disk. 31. A bonding pad provided corresponding to a bonding electrode of a semiconductor element, an external connection electrode provided on a back surface of the bonding pad, a pad provided in an arrangement region of the semiconductor element, and the pad An external connection electrode for stress buffering provided on the back surface of the semiconductor device, bonding means provided on the pad, the semiconductor element fixed to the bonding means and electrically connected to the bonding pad, and the pad And an insulating resin for sealing the semiconductor element so as to expose and integrate the back surface of the external connection electrode and the back surface of the bonding means, and the external connection electrode for stress buffering comprises: A semiconductor device formed sufficiently larger than the external connection electrode, wherein a stress due to thermal expansion of the insulating resin is transmitted to the external connection electrode while buffering the stress; 32. The semiconductor device according to claim 31, wherein the pad and the external connection electrode for stress buffering are divided into four. 33. A bonding pad provided corresponding to a bonding electrode of a semiconductor element, an external connection electrode provided on a back surface of the bonding pad, a pad provided in a region where the semiconductor element is arranged, and the pad An adhesive unit provided thereon, the semiconductor element fixed to the adhesive unit and electrically connected to the bonding pad, a back surface of the pad, a back surface of the external connection electrode, and a back surface of the adhesive unit are exposed; And an insulating resin for sealing the semiconductor element so as to be integrated with the semiconductor device, wherein the external connection electrode is formed to be elongated. 34. A bonding pad provided corresponding to a bonding electrode of a semiconductor element, an external connection electrode provided on a back surface of the bonding pad, a pad provided in a region where the semiconductor element is arranged, and the pad An adhesive unit provided thereon, the semiconductor element fixed to the adhesive unit and electrically connected to the bonding pad, a back surface of the pad, a back surface of the external connection electrode, and a back surface of the adhesive unit are exposed; And an insulating resin for sealing the semiconductor element so as to integrate the semiconductor element, and a side surface of the external connection electrode has the same curved surface. 35. The semiconductor device according to claim 31, wherein said external connection electrode is a solder electrode.