JP2002184780A - Vertical heat treatment apparatus - Google Patents

Vertical heat treatment apparatus

Info

Publication number
JP2002184780A
JP2002184780A JP2000378209A JP2000378209A JP2002184780A JP 2002184780 A JP2002184780 A JP 2002184780A JP 2000378209 A JP2000378209 A JP 2000378209A JP 2000378209 A JP2000378209 A JP 2000378209A JP 2002184780 A JP2002184780 A JP 2002184780A
Authority
JP
Japan
Prior art keywords
inert gas
reactor core
opening
core pipe
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000378209A
Other languages
Japanese (ja)
Inventor
Yuichi Sonoyama
裕一 園山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP2000378209A priority Critical patent/JP2002184780A/en
Publication of JP2002184780A publication Critical patent/JP2002184780A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To overcome a problem in a conventional vertical heat treatment apparatus that, when a boat is raised and comes near to an opening of a reactor core pipe, the flow rate of an inert gas blown out of the opening becomes fairly high, a dust surrounding the reactor core pipe rises, and thus a semiconductor wafer, a jig, etc., placed around the reactor core pipe may be contaminated. SOLUTION: This vertical heat treatment apparatus 101 includes a boat 3 on which a plurality of semiconductor wafers 2 are horizontally mounted, a vertical reactor core pipe 4 (hereinafter, referred to a reactor core pipe), a heater 5 disposed outside of the reactor core pipe 4 to heat the reactor core pipe 4, a gas supply port 6 for supplying a gas into the reactor core pipe 4, a gas exhausting port 7 for exhausting the gas from the reactor core pipe 4, a position detecting unit 102 for detecting the position of a hatch 8 for an opening 9 and a gas amount regulating unit 103 for regulating the amount of an inert gas to be supplied in order to keep a predetermined flow rate of the inert gas blown out of the opening based on the detected data.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウエハを熱
処理する縦型熱処理装置に関する。
The present invention relates to a vertical heat treatment apparatus for heat treating a semiconductor wafer.

【0002】[0002]

【従来の技術】従来の縦型熱処理装置の一例を示す模式
断面図として図4を参照して説明する。この縦型熱処理
装置1は複数の半導体ウエハ2を水平に搭載するボート
3と、縦型炉心管4(以降、炉心管と呼ぶ。)と、その
外側に配設され炉心管4を加熱するヒータ5と、炉心管
4内に不活性ガスを供給するガス供給口6と、炉心管4
内のガスを排気するガス排気口7とで構成されている。
ボート3の下部にはハッチ部8があり、ボート3が下方
から上昇すると、このハッチ部8で炉心管4の開口部9
が閉塞される構造になっている。
2. Description of the Related Art A schematic sectional view showing an example of a conventional vertical heat treatment apparatus will be described with reference to FIG. The vertical heat treatment apparatus 1 includes a boat 3 on which a plurality of semiconductor wafers 2 are mounted horizontally, a vertical furnace tube 4 (hereinafter, referred to as a furnace tube), and a heater disposed outside the boat 3 for heating the furnace tube 4. 5, a gas supply port 6 for supplying an inert gas into the core tube 4,
And a gas exhaust port 7 for exhausting the gas inside.
A hatch portion 8 is provided at the lower portion of the boat 3. When the boat 3 rises from below, the hatch portion 8 causes the opening 9 of the core tube 4 to open.
Is closed.

【0003】次に、この縦型熱処理装置1の動作を説明
する。炉心管4の下方位置で複数の半導体ウエハ2がボ
ート3に搭載される。搭載作業が完了すると、ボート3
は下方位置から炉心管4内にゆっくり上昇していく。こ
のとき、反応系に空気を巻き込むことを防止するために
炉心管4内の空気を例えば窒素などの不活性ガス(図中
矢印で示す)と置換する。置換方法は炉心管4に設けら
れたガス供給口6から大量の不活性ガスを勢いよく供給
し炉心管4内の空気を追い出し炉心管4内を不活性ガス
で充満させるものである。ボート3が上昇しハッチ部8
が炉心管4の開口部9を閉塞するまでこの不活性ガスの
供給は継続され閉塞が完了した時点で停止される。
Next, the operation of the vertical heat treatment apparatus 1 will be described. A plurality of semiconductor wafers 2 are mounted on the boat 3 at a position below the furnace tube 4. When the installation work is completed, the boat 3
Gradually rises into the furnace tube 4 from the lower position. At this time, the air in the furnace core tube 4 is replaced with an inert gas such as nitrogen (indicated by an arrow in the figure) in order to prevent air from being entrained in the reaction system. In the replacement method, a large amount of inert gas is supplied vigorously from a gas supply port 6 provided in the reactor core tube 4 to expel air in the reactor core tube 4 and fill the reactor core tube 4 with the inert gas. Boat 3 rises and hatch 8
The supply of the inert gas is continued until the opening of the furnace tube 4 is closed, and is stopped when the closing is completed.

【0004】[0004]

【発明が解決しようとする課題】従来の縦型熱処理装置
では、炉心管内の空気を不活性ガスと置換するため、ボ
ートが上昇しハッチ部が完全に炉心管の開口部を閉塞す
るまで大量の不活性ガスを供給する。そのため、ハッチ
部が炉心管の開口部に接近し開口面積が小さくなると開
口部から吹出す不活性ガスの流速はかなり速いものとな
り炉心管周辺の塵埃を舞い上げることになった。この塵
埃は炉心管の周辺にある半導体ウエハや治工具などを汚
染する危険があり早急な改善が求められていた。
In the conventional vertical heat treatment apparatus, since the air in the furnace tube is replaced with an inert gas, a large amount of water is used until the boat rises and the hatch completely closes the opening of the furnace tube. Supply inert gas. For this reason, when the hatch portion approaches the opening of the furnace tube and the opening area becomes smaller, the flow velocity of the inert gas blown out from the opening becomes considerably high, so that dust around the furnace tube is blown up. This dust has a risk of contaminating semiconductor wafers, jigs and the like in the vicinity of the furnace tube, so that an immediate improvement is required.

【0005】本発明の目的は、ボートの上昇に伴い開口
部から吹出す不活性ガスの流速が増すことにより炉心管
周辺の塵埃が舞い上げられることを防止することであ
る。
SUMMARY OF THE INVENTION It is an object of the present invention to prevent dust around the furnace tube from being blown up due to an increase in the flow rate of an inert gas blown from an opening when the boat is raised.

【0006】[0006]

【課題を解決するための手段】本発明は上記課題を解決
するために提案されたもので、複数の半導体ウエハをボ
ートに搭載して、外側に加熱手段を配設した縦型炉心管
に下方から入炉させ、縦型炉心管内の空気を不活性ガス
に置換してボートの底部にあるハッチ部で縦型炉心管の
開口部を閉塞し半導体ウエハの熱処理を行なう縦型熱処
理装置において、ボートの上昇動作に伴い不活性ガスの
供給量を制御する制御機構を具備したことを特徴とする
縦型熱処理装置である。
SUMMARY OF THE INVENTION The present invention has been proposed in order to solve the above-mentioned problems. A plurality of semiconductor wafers are mounted on a boat, and the semiconductor wafer is placed on a vertical furnace tube having heating means disposed outside. In a vertical heat treatment apparatus, the air in the vertical furnace tube is replaced with an inert gas, and the opening of the vertical furnace tube is closed by a hatch at the bottom of the boat to heat-treat the semiconductor wafer. A vertical heat treatment apparatus comprising a control mechanism for controlling a supply amount of an inert gas in accordance with the ascending operation.

【0007】[0007]

【発明の実施の形態】本発明の縦型熱処理装置の一例を
示す模式断面図として図1を参照して説明する。図4と
同一部分には同一符号を付して説明を省略する。この縦
型熱処理装置101は複数の半導体ウエハ2を水平に搭
載するボート3と、縦型炉心管4(以降、炉心管と呼
ぶ。)と、その外側に配設され炉心管4を加熱するヒー
タ5と、炉心管4内にガスを供給するガス供給口6と、
炉心管4内のガスを排気するガス排気口7と、開口部9
に対するハッチ部8の位置を検知する位置検知部102
と、その検知データを基に開口部9から吹出す不活性ガ
スを所定の流速にするための不活性ガス供給量を制御す
るガス量調節部103とで構成されている。位置検知部
102は例えば認識カメラまたは近接センサなどのよう
にハッチ部8と開口部9との間の距離を認識できるセン
サであれば何でもよい。また、ガス量調節部103の供
給量調節機構は例えば一般的なバルブ式の調整弁でよ
い。
FIG. 1 is a schematic sectional view showing an example of a vertical heat treatment apparatus according to the present invention. The same parts as those in FIG. The vertical heat treatment apparatus 101 includes a boat 3 on which a plurality of semiconductor wafers 2 are horizontally mounted, a vertical furnace tube 4 (hereinafter, referred to as a furnace tube), and a heater disposed outside the boat 3 for heating the furnace tube 4. 5, a gas supply port 6 for supplying gas into the core tube 4,
A gas exhaust port 7 for exhausting gas in the reactor core tube 4 and an opening 9
Detection unit 102 for detecting the position of hatch 8 with respect to
And a gas amount adjusting unit 103 for controlling the supply amount of the inert gas to make the inert gas blown from the opening 9 into a predetermined flow rate based on the detection data. The position detecting unit 102 may be any sensor that can recognize the distance between the hatch 8 and the opening 9 such as a recognition camera or a proximity sensor. The supply amount adjustment mechanism of the gas amount adjustment unit 103 may be, for example, a general valve-type adjustment valve.

【0008】次に、この縦型熱処理装置101の動作を
説明する。炉心管4の下方位置で複数の半導体ウエハ2
がボート3に搭載される。搭載作業が完了すると、ボー
ト3は下方位置から炉心管4内にゆっくり上昇してい
く。この上昇動作中、開口部に対するハッチ部の位置が
位置検知部102によって検知され、そのデータを基に
開口部9から吹出す不活性ガスを所定の流速にするため
の不活性ガス供給量が算出されガス供給口6からの不活
性ガス供給量がガス量調節部103で制御される。図2
に好適な制御パターンの一例として不活性ガス供給量と
ボート3位置との関係を示す説明図を示す。ボート3が
入炉を開始し所定の上昇位置(図中a点)に達すると、
それまで一定であった不活性ガス供給量を減少させてい
きハッチ部8により開口部9が閉塞され入炉が完了する
と同時に停止させるものである。
Next, the operation of the vertical heat treatment apparatus 101 will be described. The plurality of semiconductor wafers 2 are located below the furnace tube 4.
Is mounted on the boat 3. When the mounting operation is completed, the boat 3 slowly rises into the core tube 4 from the lower position. During this ascent operation, the position of the hatch portion with respect to the opening is detected by the position detection unit 102, and based on the data, the inert gas supply amount for adjusting the inert gas blown from the opening 9 to a predetermined flow rate is calculated. The amount of inert gas supplied from the gas supply port 6 is controlled by the gas amount controller 103. FIG.
FIG. 4 is an explanatory diagram showing a relationship between the supply amount of the inert gas and the position of the boat 3 as an example of a suitable control pattern. When the boat 3 starts to enter the furnace and reaches a predetermined ascending position (point a in the figure),
The supply amount of the inert gas, which was constant until then, is reduced, and the opening 9 is closed by the hatch portion 8 to stop the furnace at the same time when the furnace is completed.

【0009】上記の説明では、炉心管4の開口部9に対
するハッチ部8の位置を位置検知部102で検知する構
成としたが、上昇動作スタート後のボート3の上昇パタ
ーンが安定していて制御される不活性ガス供給量が理論
的に算出可能である場合には、ボート3の上昇に連動し
ガス量調節部103が所定のパターンのガス供給量調節
動作をするようにプログラムしてもよい。
In the above description, the position of the hatch 8 with respect to the opening 9 of the furnace tube 4 is detected by the position detector 102. However, the rising pattern of the boat 3 after the start of the lifting operation is stable and the control is performed. If the inert gas supply amount to be calculated can be theoretically calculated, the gas amount adjustment unit 103 may be programmed to perform a gas supply amount adjustment operation in a predetermined pattern in conjunction with the rise of the boat 3. .

【0010】また、上記の実施例では、開口部9に対す
るハッチ部8の位置を検知しそのデータを基に不活性ガ
ス供給量を調節する構成としたが、図3に示すように、
位置検知部102に代えて開口部9付近に開口部9から
吹出す不活性ガスの流速を検知する流速検知部202を
配設し、そのデータを基に不活性ガス供給量を調節する
構成とした縦型熱処理装置201でもよい。
In the above embodiment, the position of the hatch portion 8 with respect to the opening 9 is detected, and the inert gas supply amount is adjusted based on the data. However, as shown in FIG.
A configuration in which a flow rate detecting section 202 for detecting the flow rate of the inert gas blown out from the opening 9 is provided near the opening 9 instead of the position detecting section 102, and the inert gas supply amount is adjusted based on the data. Vertical heat treatment apparatus 201 may be used.

【0011】[0011]

【発明の効果】本発明の縦型熱処理装置によれば、ボー
トが上昇し炉心管の開口部に接近し開口面積が小さくな
っても、それに応じてガス供給口からの不活性ガス供給
量が制御されるため開口部から吹出す不活性ガスが炉心
管周辺の塵埃を舞い上げることなく半導体ウエハや治工
具などを汚染することを防止できる。
According to the vertical heat treatment apparatus of the present invention, even if the boat rises and approaches the opening of the core tube and the opening area becomes smaller, the inert gas supply amount from the gas supply port is correspondingly reduced. As a result, it is possible to prevent the inert gas blown from the opening from contaminating the semiconductor wafer, jigs and the like without sowing dust around the furnace tube.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明に基づく一例の縦型熱処理装置の模式
断面図
FIG. 1 is a schematic sectional view of an example of a vertical heat treatment apparatus according to the present invention.

【図2】 従来の縦型熱処理装置の模式断面図FIG. 2 is a schematic cross-sectional view of a conventional vertical heat treatment apparatus.

【図3】 本発明に基づく他例の縦型熱処理装置の模式
断面図
FIG. 3 is a schematic cross-sectional view of another vertical heat treatment apparatus according to the present invention.

【図4】 従来の縦型熱処理装置の模式断面図FIG. 4 is a schematic cross-sectional view of a conventional vertical heat treatment apparatus.

【符号の説明】[Explanation of symbols]

101,201 縦型熱処理装置 102 位置検知部 103 ガス量調節部 202 流速検知部 101, 201 Vertical heat treatment apparatus 102 Position detection unit 103 Gas amount adjustment unit 202 Flow velocity detection unit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】複数の半導体ウエハをボートに搭載して、
外側に加熱手段を配設した縦型炉心管に下方から入炉さ
せ、前記縦型炉心管内の空気を不活性ガスに置換して前
記ボートの底部にあるハッチ部で前記縦型炉心管の開口
部を閉塞し前記半導体ウエハの熱処理を行なう縦型熱処
理装置において、前記ボートの上昇動作に伴い不活性ガ
スの供給量を制御する制御機構を具備したことを特徴と
する縦型熱処理装置。
A plurality of semiconductor wafers mounted on a boat;
The vertical furnace tube having a heating means disposed on the outside is allowed to enter from below, and the air in the vertical furnace tube is replaced with an inert gas to open the vertical furnace tube at a hatch portion at the bottom of the boat. A vertical heat treatment apparatus for performing a heat treatment of a semiconductor wafer by closing a portion thereof, comprising a control mechanism for controlling a supply amount of an inert gas in accordance with a lifting operation of the boat.
【請求項2】制御機構が縦型炉心管の開口部に対するハ
ッチ部の位置を検知する位置検知部と、前記検知データ
を基に開口部から吹出す不活性ガスを所定の流速にする
ために不活性ガス供給量を制御するガス量調節部とで構
成されていることを特徴とする請求項1に記載の縦型熱
処理装置。
2. A position detecting unit for detecting a position of a hatch portion with respect to an opening of a vertical furnace core tube, and a control unit for controlling an inert gas blown out from the opening to a predetermined flow rate based on the detection data. The vertical heat treatment apparatus according to claim 1, further comprising a gas amount control unit that controls an inert gas supply amount.
【請求項3】制御機構が縦型炉心管の開口部付近に配設
された前記開口部から吹出す不活性ガスの流速を検知す
る流速検知部と、前記検知データを基に前記流速を所定
の値にするために不活性ガス供給量を制御するガス量調
節部とで構成されていることを特徴とする請求項1に記
載の縦型熱処理装置。
3. A flow rate detecting section provided near the opening of the vertical core tube for detecting a flow rate of an inert gas blown out from the opening, and a control mechanism for determining the flow rate based on the detection data. 2. The vertical heat treatment apparatus according to claim 1, further comprising a gas amount adjusting unit for controlling an inert gas supply amount so as to obtain the above value.
JP2000378209A 2000-12-13 2000-12-13 Vertical heat treatment apparatus Pending JP2002184780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000378209A JP2002184780A (en) 2000-12-13 2000-12-13 Vertical heat treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000378209A JP2002184780A (en) 2000-12-13 2000-12-13 Vertical heat treatment apparatus

Publications (1)

Publication Number Publication Date
JP2002184780A true JP2002184780A (en) 2002-06-28

Family

ID=18846822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000378209A Pending JP2002184780A (en) 2000-12-13 2000-12-13 Vertical heat treatment apparatus

Country Status (1)

Country Link
JP (1) JP2002184780A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101487407B1 (en) * 2013-01-16 2015-01-29 주식회사 엘지실트론 Processing apparatus and method of susceptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101487407B1 (en) * 2013-01-16 2015-01-29 주식회사 엘지실트론 Processing apparatus and method of susceptor

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