JPH10209042A - Aligner for semiconductor wafer - Google Patents

Aligner for semiconductor wafer

Info

Publication number
JPH10209042A
JPH10209042A JP10000472A JP47298A JPH10209042A JP H10209042 A JPH10209042 A JP H10209042A JP 10000472 A JP10000472 A JP 10000472A JP 47298 A JP47298 A JP 47298A JP H10209042 A JPH10209042 A JP H10209042A
Authority
JP
Japan
Prior art keywords
wafer
exposure
shutter
temperature
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10000472A
Other languages
Japanese (ja)
Inventor
Piru No Hyun
ピル ノ ヒュン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
LG Semicon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Semicon Co Ltd filed Critical LG Semicon Co Ltd
Publication of JPH10209042A publication Critical patent/JPH10209042A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the local distortion of a wafer, by controlling a power source device which electrically heats a heater wire buried in a wafer chuck, and a shutter for controlling a light emitting body and exposure quantity. SOLUTION: A shutter 32 which controls the pass quantity of light emitted from a light emitting body 31 and controls exposure quantity reaching the upper face of a wafer 40 grasped by a wafer chuck 33 is installed below the light emitting body 31. The wafer chuck 33 which safely grasps the wafer 40 being an exposure object body is installed below the shutter 32. A power source device 36 is connected to a heater wire (heater) 35 buried in the wafer chuck 33 and it electrically heats the wire 35. A temperature sensing sensor 37 for sensing the temperature of the wafer 40 is connected to the power source device 36. An exposure controller 38 is connected to the light emitting body 31, the shutter 32 and a power source device 26, and it controls the light emitting quantity of the light emitting body 31, and the operations of the shutter 32 and the light source device 36.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウェーハの
露光装置に係るもので、詳しくは、露光の工程時に、マ
スクパターンに対応するウェーハの倍率(Magnificatio
n )を補正し得る半導体ウェーハの露光装置に関するも
のである.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for a semiconductor wafer, and more particularly, to a semiconductor wafer exposure apparatus.
The present invention relates to a semiconductor wafer exposure apparatus capable of correcting n).

【0002】[0002]

【従来の技術】従来の半導体ウェーハ露光装置において
は、図2に示したように、露光を行うための発光体11
と、露光量を調節するシャッター12と、半導体ウェー
ハ20を安全につかむウェーハチャック13と、該ウェ
ーハチャック13を移動させて位置を調節する位置調節
機14と、前記ウェーハチャック13の内部への温度調
節用冷媒の循環通路であるフロ−パイプ15と、冷媒の
温度を調節する熱交換器16と、前記フローパイプ15
に介装されて冷媒の循環量を調節するバルブ17と、該
バルブ17の開閉動作を調節する流量調節器18と、前
記発光体11、シャッター12、位置調節機14及び流
量調節器18を夫々制御する露光制御器19と、を備え
て構成されていた。図中、未説明符号25はマスクを示
したものである。
2. Description of the Related Art In a conventional semiconductor wafer exposure apparatus, as shown in FIG.
A shutter 12 for adjusting the exposure amount; a wafer chuck 13 for securely holding the semiconductor wafer 20; a position adjuster 14 for adjusting the position by moving the wafer chuck 13; A flow pipe 15 which is a circulation passage of the adjusting refrigerant; a heat exchanger 16 which adjusts the temperature of the refrigerant;
A valve 17 interposed in the valve to adjust the amount of refrigerant circulated; a flow controller 18 to control the opening / closing operation of the valve 17; and the luminous body 11, the shutter 12, the position adjuster 14 and the flow adjuster 18, respectively. And an exposure controller 19 for controlling. In the figure, an unexplained reference numeral 25 indicates a mask.

【0003】このように構成された従来の半導体ウェー
ハ露光装置の動作を説明する。露光制御器19の制御信
号により発光体11から発光された光が、マスク25を
通過した後、ウェーハ20に到達すると、冷媒がフロー
パイプ15を経てウェーハチャック13に流入され、露
光工程で発生するウェーハチャック13及びウェーハ2
0の熱が前記冷媒に吸収され、露光時の発生熱によるウ
ェーハ20の局部的な歪みが防止される。
[0003] The operation of the conventional semiconductor wafer exposure apparatus thus configured will be described. When the light emitted from the light emitter 11 by the control signal of the exposure controller 19 passes through the mask 25 and reaches the wafer 20, the coolant flows into the wafer chuck 13 via the flow pipe 15 and is generated in the exposure process. Wafer chuck 13 and wafer 2
The heat of 0 is absorbed by the coolant, and local distortion of the wafer 20 due to heat generated during exposure is prevented.

【0004】この場合、前記露光制御器19は、露光工
程の開始及び終了を流量調節器18に知らせ、該流量調
節器18は、流量調節バルブ17の開閉動作を制御して
フローパイプ15内の循環流量を調節する。且つ、前記
冷媒の温度は熱交換器16により調節される。
In this case, the exposure controller 19 informs the flow controller 18 of the start and end of the exposure step, and the flow controller 18 controls the opening and closing operation of the flow control valve 17 to control the opening and closing of the flow pipe 15. Adjust the circulation flow rate. In addition, the temperature of the refrigerant is adjusted by the heat exchanger 16.

【0005】[0005]

【発明が解決しようとする課題】然るに、このような従
来の半導体ウェーハ露光装置においては、マスクパター
ンに対応するウェーハの倍率を調整することができず、
ウェーハ上に所望の倍率パターンを形成することができ
ないという不都合な点があった。そこで、本発明は、こ
のような従来の課題に鑑みてなされたもので、露光工程
時にマスクパターンに対応するウェーハの倍率を調節
し、該ウェーハの局部的な歪みを防止し得る半導体ウェ
ーハ露光装置を提供することを目的とする。
However, in such a conventional semiconductor wafer exposure apparatus, the magnification of the wafer corresponding to the mask pattern cannot be adjusted.
There is an inconvenience that a desired magnification pattern cannot be formed on the wafer. Accordingly, the present invention has been made in view of such a conventional problem, and a semiconductor wafer exposure apparatus capable of adjusting a magnification of a wafer corresponding to a mask pattern during an exposure process and preventing local distortion of the wafer. The purpose is to provide.

【0006】[0006]

【課題を解決するための手段】このような目的を達成す
るため、本発明に係る半導体ウェーハ露光装置において
は、露光を行うための発光体と、露光量を調節するシャ
ッターと、半導体ウェーハを安全につかむウェーハチャ
ックと、該ウェーハチャックを移動させて位置を調節す
る位置調節機と、前記ウェーハチャックの内部に埋設さ
れた熱線と、該熱線を電気的に発熱させる電源装置と、
前記発光体、シャッター及び電源装置を夫々制御する露
光制御器と、を備えて構成されている。
In order to achieve such an object, a semiconductor wafer exposure apparatus according to the present invention comprises a light emitter for performing exposure, a shutter for adjusting an exposure amount, and a semiconductor wafer exposure apparatus. A wafer chuck to be gripped, a position adjuster for adjusting the position by moving the wafer chuck, a hot wire embedded inside the wafer chuck, and a power supply device for electrically generating the hot wire,
And an exposure controller for controlling the light emitter, the shutter, and the power supply device, respectively.

【0007】ここで、前記ウェーハの温度を感知し、該
感知された温度データを前記露光制御器に伝送する温度
感知センサを追加して備えるとよく、この場合に、前記
露光制御器は、前記ウェーハの温度データに基づいて、
前記電源装置に温度調節制御信号を印加し、更に、前記
電源装置は、前記露光制御器から印加された温度調節制
御信号により、前記熱線の温度を制御するとよい。
Here, a temperature sensor for sensing the temperature of the wafer and transmitting the sensed temperature data to the exposure controller may be additionally provided. In this case, the exposure controller includes Based on wafer temperature data,
It is preferable that a temperature adjustment control signal is applied to the power supply device, and the power supply device controls the temperature of the heating wire according to a temperature adjustment control signal applied from the exposure controller.

【0008】[0008]

【発明の実施の形態】以下に本発明の実施の形態を図1
を用いて説明する。本発明に係る半導体ウェーハ露光装
置においては、露光源になる発光体31と、該発光体3
1の下方側に設置され、該発光体31から発光された光
の通過量を調節し、後述するウェーハチャック33に把
持されたウェーハ40の上面まで到達される光量(露光
量)を調節するシャッター32と、該シャッター32の
下方側に設置され、露光対象体であるウェーハ40を安
全につかむウェーハチャック33と、該ウェーハチャッ
ク33の側方に装置され、該ウェーハチャック33を移
動させて位置を調節する位置調節機34と、前記ウェー
ハチャック33の内部に埋設された熱線(ヒータ)35
と、該熱線35に接続され、該熱線35を電気的に発熱
させる電源装置36と、該電源装置36に接続され、前
記ウェーハ40の温度を感知する温度感知センサ37
と、前記発光体31、シャッター32及び電源装置36
に夫々接続され、発光体31の発光量とシャッター32
及び電源装置36の動作とを夫々制御する露光制御器3
8と、を備えて構成されている。図中45はマスクを示
したものである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG.
This will be described with reference to FIG. In the semiconductor wafer exposure apparatus according to the present invention, the light emitter 31 serving as an exposure source and the light emitter 3
1, a shutter that adjusts the amount of light emitted from the light emitter 31 and adjusts the amount of light (exposure) reaching the upper surface of the wafer 40 held by the wafer chuck 33 described below. 32, a wafer chuck 33 that is installed below the shutter 32 and safely grips the wafer 40 that is the object to be exposed, and is installed beside the wafer chuck 33 to move the wafer chuck 33 to move the wafer chuck 33 to a position. A position adjuster 34 for adjustment, and a heating wire (heater) 35 embedded inside the wafer chuck 33
And a power supply device 36 connected to the heating wire 35 for electrically heating the heating wire 35, and a temperature sensor 37 connected to the power supply device 36 and sensing the temperature of the wafer 40.
And the light emitter 31, shutter 32 and power supply 36
And the light emission amount of the light emitter 31 and the shutter 32
And an exposure controller 3 for controlling the operation of the power supply device 36, respectively.
8 is provided. In the figure, reference numeral 45 denotes a mask.

【0009】このように構成された半導体ウェーハ露光
装置の動作を以下に説明する。先ず、ウェーハチャック
33の上面にウェーハ40を把持し、パターン化された
マスク45を該ウェーハ40の上方側に位置するように
装置する。次いで、露光制御器38の制御信号により発
光体31から発光された光は、シャッター32とマスク
45とを順次経た後、前記ウェーハ40の上面に到達す
る。
The operation of the semiconductor wafer exposure apparatus thus configured will be described below. First, the wafer 40 is gripped on the upper surface of the wafer chuck 33, and the patterned mask 45 is installed so as to be positioned above the wafer 40. Next, the light emitted from the light emitting body 31 according to the control signal of the exposure controller 38 passes through the shutter 32 and the mask 45 sequentially, and reaches the upper surface of the wafer 40.

【0010】このとき、前記露光制御器38は、前記シ
ャッター32の動作を制御して該シャッター32を通過
する露光量を調節し、前記電源装置36を制御して前記
熱線35に電流を供給し、該熱線35を発熱させる。そ
の後、前記熱線35の発熱によって前記ウェーハチャッ
ク33に熱が供給され、該供給された熱は、前記ウェー
ハ40に伝達される。
At this time, the exposure controller 38 controls the operation of the shutter 32 to adjust the amount of exposure passing through the shutter 32, and controls the power supply 36 to supply a current to the heating wire 35. Then, the heating wire 35 is heated. Thereafter, heat is supplied to the wafer chuck 33 by the heat generated by the heating wire 35, and the supplied heat is transmitted to the wafer 40.

【0011】次いで、前記温度感知センサ37は、前記
ウェーハ40の温度を感知し、該感知された温度データ
は、前記電源装置36を介して前記露光制御器38に伝
送され、該露光制御器38は、入力された温度データに
基づいて、前記電源装置36に温度調節制御信号を印加
し、該電源装置36により前記熱線35の発熱量を調節
させる。
Next, the temperature sensor 37 senses the temperature of the wafer 40, and the sensed temperature data is transmitted to the exposure controller 38 via the power supply 36, and the exposure controller 38 Applies a temperature adjustment control signal to the power supply device 36 based on the input temperature data, and causes the power supply device 36 to adjust the amount of heat generated by the heating wire 35.

【0012】即ち、前記熱線35の発熱量により前記ウ
ェーハ40の温度を上昇又は下降させて、該ウェーハ4
0を微細に拡張又は縮小させ、ウェーハの倍率を調整す
る。且つ、前記ウェーハ40に伝達された熱により該ウ
ェーハ40の局部的な歪みを補正することができる。
That is, the temperature of the wafer 40 is raised or lowered according to the amount of heat generated by the heating wire 35,
0 is finely expanded or reduced to adjust the magnification of the wafer. In addition, local distortion of the wafer 40 can be corrected by the heat transmitted to the wafer 40.

【0013】[0013]

【発明の効果】以上説明したように、本発明に係る半導
体ウェーハ露光装置によれば、露光時の発生熱によるウ
ェーハの局部的な歪みを防止し、マスクパターンに対応
するウェーハの倍率を正確に調節し得るという効果があ
る。また、ウェーハの温度を感知しつつ制御すること
で、より正確な調節が可能となる。
As described above, according to the semiconductor wafer exposure apparatus of the present invention, local distortion of the wafer due to heat generated during exposure is prevented, and the magnification of the wafer corresponding to the mask pattern can be accurately determined. It has the effect of being adjustable. In addition, by controlling while sensing the temperature of the wafer, more accurate adjustment can be performed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明に係る半導体ウェーハ露光装置を示し
た概略構成図
FIG. 1 is a schematic configuration diagram showing a semiconductor wafer exposure apparatus according to the present invention.

【図2】 従来の半導体ウェーハ露光装置を示した概略
構成図
FIG. 2 is a schematic configuration diagram showing a conventional semiconductor wafer exposure apparatus.

【符号の説明】[Explanation of symbols]

31:発光体 32:シャッター 33:ウェーハチャック 34:位置調節機 35:熱線 36:電源装置 37:温度感知センサ 38:露光制御器 40:ウェーハ 45:マスク 31: Light Emitting Element 32: Shutter 33: Wafer Chuck 34: Position Adjuster 35: Hot Wire 36: Power Supply 37: Temperature Sensing Sensor 38: Exposure Controller 40: Wafer 45: Mask

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】露光を行うための発光体(31)と、 露光量を調節するシャッター(32)と、 半導体ウェーハ(40)を安全につかむウェーハチャッ
ク(33)と、 該ウェーハチャック(33)を移動させて位置を調節す
る位置調節機(34)と、 前記ウェーハチャック(34)の内部に埋設された熱線
(35)と、 該熱線(35)を電気的に発熱させる電源装置(36)
と、 前記発光体(31)、シャッター(32)及び電源装置
(36)を夫々制御する露光制御器(38)と、 を備えて構成されたことを特徴とする半導体ウェーハの
露光装置。
1. A light emitting body (31) for performing exposure, a shutter (32) for adjusting an exposure amount, a wafer chuck (33) for securely holding a semiconductor wafer (40), and the wafer chuck (33). A position adjuster (34) for adjusting the position by moving the heating wire; a heating wire (35) embedded inside the wafer chuck (34); and a power supply device (36) for electrically heating the heating wire (35).
And an exposure controller (38) for controlling the light emitter (31), shutter (32), and power supply (36), respectively.
【請求項2】前記ウェーハ(40)の温度を感知し、該
感知された温度データを前記露光制御器(38)に伝送
する温度感知センサ(37)を追加して備えたことを特
徴とする請求項1記載の半導体ウェーハの露光装置。
2. A temperature sensor for sensing the temperature of the wafer and transmitting the sensed temperature data to the exposure controller. An exposure apparatus for a semiconductor wafer according to claim 1.
【請求項3】前記露光制御器は(38)、前記ウェーハ
(40)の温度データに基づいて、前記電源装置(3
6)に温度調節制御信号を印加することを特徴とする請
求項2載の半導体ウェーハの露光装置。
3. The power supply device (3) based on temperature data of the wafer (40).
3. The apparatus for exposing a semiconductor wafer according to claim 2, wherein a temperature adjustment control signal is applied to (6).
【請求項4】前記電源装置(36)は、前記露光制御器
(38)から印加された温度調節制御信号により、前記
熱線(35)の温度を制御することを特徴とする請求項
3記載の半導体ウェーハの露光装置。
4. The power supply device according to claim 3, wherein the power supply device controls the temperature of the heating wire according to a temperature adjustment control signal applied from the exposure controller. Exposure equipment for semiconductor wafers.
JP10000472A 1996-12-31 1998-01-05 Aligner for semiconductor wafer Pending JPH10209042A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019960079109A KR0179938B1 (en) 1996-12-31 1996-12-31 Exposure device for wafer
KR79109/1996 1996-12-31

Publications (1)

Publication Number Publication Date
JPH10209042A true JPH10209042A (en) 1998-08-07

Family

ID=19493025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10000472A Pending JPH10209042A (en) 1996-12-31 1998-01-05 Aligner for semiconductor wafer

Country Status (2)

Country Link
JP (1) JPH10209042A (en)
KR (1) KR0179938B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1411391A2 (en) * 2002-10-18 2004-04-21 ASML Holding N.V. Method and apparatus for cooling a reticle during lithographic exposure
KR100475051B1 (en) * 2001-09-07 2005-03-10 삼성전자주식회사 Exposing system of semiconductor wafer and method for operating the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101182275B1 (en) 2010-11-02 2012-09-12 삼성에스디아이 주식회사 Rechargeable battery

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475051B1 (en) * 2001-09-07 2005-03-10 삼성전자주식회사 Exposing system of semiconductor wafer and method for operating the same
EP1411391A2 (en) * 2002-10-18 2004-04-21 ASML Holding N.V. Method and apparatus for cooling a reticle during lithographic exposure
EP1411391A3 (en) * 2002-10-18 2005-10-12 ASML Holding N.V. Method and apparatus for cooling a reticle during lithographic exposure

Also Published As

Publication number Publication date
KR19980059764A (en) 1998-10-07
KR0179938B1 (en) 1999-04-01

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