JP2002181627A - Method of manufacturing thermal infrared solid image pickup device, and its structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermal infrared solid image pickup device of high detecting performance, suppressing the dissipation of heat from a thermal infrared detector. SOLUTION: In the thermal infrared solid image pickup device with an infrared detecting part supported on a recessed part formed at a silicon board, by a support leg, a wiring layer is formed of material with high specific resistance so that the heat conductivity of the wiring layer on the support leg is low.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a thermal infrared solid-state imaging device and a structure thereof, and more particularly, to a method of manufacturing a thermal infrared solid-state imaging device with improved detection sensitivity of an infrared detecting section and a method of manufacturing the same. About.

[0002]

2. Description of the Related Art FIG. 7 shows an OPTO-ELECTRONICS REVIEW Vol.
FIG. 7A is a top view of a thermal infrared detector having a conventional structure described in No. 4 as a whole, and is a cross-sectional view taken along the line VI-VI of FIG. 7B. Is shown.

In the thermal infrared detector 100, an insulating film 102 is formed on a silicon substrate 101. Also,
A concave portion 103 is formed in the silicon substrate 101. The support leg 104 and the support leg 10 are located above the recess 103.
4 is provided with an infrared detector 105 supported by the infrared detector.
The infrared detecting section 105 is provided with an infrared detecting film 106 made of silicon and covered with the insulating film 102.
On the insulating film 102 of the support leg 104, a tungsten wiring layer 109 is formed. A via hole 107 is opened in the insulating film 102 on the infrared detection film 106, and the infrared detection film 106 and the wiring layer 109 are connected by extending the wiring layer 109 also in the via hole 107. Further, the contact layer 110 made of tungsten silicide is formed by raising the temperature of the wiring layer 109 and the like to 600 ° C. or higher. The wiring layer 109 is connected to the silicon substrate 101 via an external wiring 112 formed in the insulating film 102 and a contact layer 110 formed in the via hole 108, respectively.

FIG. 8 shows that the thermal infrared detector 100 has three rows.
FIG. 2 is a perspective view of a thermal infrared solid-state imaging device generally denoted by 200 arranged in three rows. In the thermal infrared solid-state imaging device 200, an insulating film 102 is provided on a silicon substrate 101, and a detector array unit 120 and a signal processing circuit unit 121 are provided on the insulating film 102.

In order to improve the detection performance of the thermal infrared detector 100, it is necessary to suppress the dissipation of heat from the infrared detector 105. Such heat dissipation is mainly due to the support leg 1
Occurs via the wiring layer 109 on the substrate 04. Therefore, conventionally, the cross-sectional area of the wiring layer 109 has been reduced or the wiring length has been increased.

[0006]

However, the wiring layer 109
There is a certain limit to these countermeasures, for example, the resistance to electromigration is reduced when the cross-sectional area is reduced, and it is difficult to reduce the size of the thermal infrared detector 100 when the wiring length of the wiring layer 109 is increased. there were.

On the other hand, since the thermal conductivity of a metal is inversely proportional to the specific resistance of the metal (Weidemann-Franz law), the wiring layer 10
9 by increasing the specific resistance of the metal of the wiring layer 109.
To reduce the thermal conductivity of the thermal infrared detector 100 and improve the detection performance thereof. However,
It was difficult to form the wiring layer 109 having a desired specific resistance such as a specific resistance of 5 × 10 ⁻⁵ Ω · cm or more.

On the other hand, as a result of intensive studies by the inventors, even when the wiring layer 109 is formed so as to have the above-described specific resistance, the wiring layer 109 is formed to form the contact layer 110. Has been found that the specific resistance of the wiring layer 109 is reduced by the heat treatment.

Accordingly, an object of the present invention is to provide a thermal infrared solid-state imaging device in which the specific resistance of the wiring layer is increased and the detection performance of the thermal infrared detector is improved.

[0010]

SUMMARY OF THE INVENTION The present invention relates to a method of manufacturing a thermal infrared solid-state imaging device in which an infrared detecting section is supported by supporting legs on a concave portion formed in a silicon substrate. Forming an infrared detection film at the position of; forming an insulating film on the silicon substrate so as to cover the infrared detection film; forming a via hole in the insulating film on the silicon substrate; Exposing the surface of the silicon substrate to a surface of the silicon substrate, forming a metal layer so as to cover the surface of the silicon substrate exposed in the via hole, and heat-treating the silicon substrate to form a gap between the metal layer and the silicon substrate. A heat treatment step of forming a contact layer on the substrate, a wiring step of forming a high-resistance wiring layer having a high specific resistance for electrically connecting the contact layer and the infrared detection film after the heat treatment step, and the infrared detection film Forming a concave portion in the silicon substrate below the infrared detecting film so that the infrared detecting section includes the supporting leg formed with the high resistance wiring layer. 3 is a method for manufacturing an infrared solid-state imaging device. In this manner, by forming the wiring layer after the heat treatment step, a wiring layer with high specific resistance can be formed. As a result, it is possible to reduce the amount of heat dissipated from the infrared detection unit to the outside through the wiring of the support leg, and it is possible to improve the sensitivity of the thermal infrared detector.

The heat treatment step covers the surface of the silicon substrate exposed in the via hole, and forms the metal layer so as to electrically connect the silicon substrate and the infrared detecting film. Forming the contact layer between the layer and the silicon substrate, wherein the wiring step includes forming a high-resistance wiring layer having a higher specific resistance than the heat-treated metal layer on the metal layer. It is also a manufacturing method characterized by including. By using such a manufacturing method, a wiring layer having high specific resistance can be formed.

Further, the heat treatment step includes a step of forming a metal layer covering at least a surface of the silicon substrate exposed in the via hole, and forming the contact layer between the metal layer and the silicon substrate. After the metal layer is removed while leaving the contact layer, the wiring step is performed. By using such a manufacturing method, a wiring layer having a higher specific resistance can be formed.

Further, the heat treatment step forms a metal layer covering at least the surface of the silicon substrate exposed in the via hole and an intermediate wiring layer filling at least the via hole. Forming the contact layer in between, and removing the metal layer and the intermediate wiring layer so that the metal layer and the intermediate wiring layer remain only in the via hole, and then performing the wiring step. It is also a characteristic manufacturing method. By using such a manufacturing method, a wiring layer having high specific resistance can be formed. Further, by forming the contact layer, the contact resistance can be reduced.

Further, the infrared detecting film is made of silicon, and a step of forming a via hole in the insulating film on the infrared detecting film to expose a surface of the infrared detecting film in the via hole is included. Forming the metal layer so as to cover the surface of the infrared detection film exposed in the via hole, and forming the contact layer also between the metal layer and the infrared detection film. Is also good.

The specific resistance of the high resistance wiring layer is 5 × 10 ^-5
It is preferably Ω · cm or more. 5 × 10 specific resistance
By setting the resistance to ^-5 Ω · cm or more, heat dissipation through the wiring layer can be effectively prevented, and a high-sensitivity thermal infrared detector can be obtained.

Preferably, the heat treatment step is a step of heating at least an interface between the silicon substrate and the metal layer to 600 ° C. or higher to form the contact layer at the interface. By forming the contact layer by heat treatment at 600 ° C. or higher, it is possible to greatly reduce the contact resistance between the silicon substrate and the wiring layer.

The metal layer is made of W, Co, Cu, Pt, T
It is preferable to include one element selected from the group consisting of a and Ti.

The contact layer is made of W, Co, Cu, P
It is preferable to include a silicide of a material containing one element selected from the group consisting of t, Ta and Ti.

The present invention is also directed to a thermal infrared solid-state imaging device in which an infrared detecting section is supported by supporting legs on a concave portion formed in a silicon substrate, wherein the silicon substrate and the concave portion provided in the silicon substrate are provided. The infrared detecting section supported by the supporting leg, the infrared detecting film provided on the infrared detecting section, and the infrared detecting film formed on the supporting leg and electrically connecting the infrared detecting film to the silicon substrate. A wiring layer, including a contact layer formed between the wiring layer and the silicon substrate,
A thermal infrared solid-state imaging device, wherein the wiring layer contains a material having a high specific resistance so that the thermal conductivity of the wiring layer is reduced. In such a thermal infrared solid-state imaging device,
It is possible to reduce the amount of heat dissipated from the infrared detection unit to the outside through the wiring layer on the support leg, and it is possible to improve the sensitivity of the thermal infrared detector.

The specific resistance of the wiring layer is 5 × 10 ⁻⁵ Ω · c.
m or more. By setting the specific resistance of the wiring layer to such a value, the dissipation of heat can be reduced to such an extent that the detection performance of the infrared detector is not significantly affected.

The wiring layer has a specific resistance of 5 × 10 ⁻⁵ Ω · c.
m and a lower wiring layer having a specific resistance of 5 × 10 ⁻⁵ Ω · c
It may be formed from a laminated structure with m or more upper wiring layers.

The lower wiring layer is made of W, Co, Cu, P
It preferably contains one element selected from the group consisting of t, Ta and Ti. These materials react with silicon by a heat treatment at a temperature of 600 ° C. or more to form a silicide layer, and the contact resistance between a silicon substrate or the like and a lower wiring layer can be significantly reduced.

Further, the wiring layer is provided on an insulating film formed on the silicon substrate, and the wiring layer is further formed on a via hole formed in the insulating film such that a surface of the silicon substrate is exposed. And an intermediate wiring layer formed so as to be embedded therein. By providing the intermediate wiring layer, the contact resistance between the silicon substrate or the like and the lower wiring layer can be further reduced. As a result, a thermal infrared solid-state imaging device having high driving performance and high reliability can be obtained.

The intermediate wiring layer is made of Si, W, WSi, T
It is preferably made of one material selected from the group consisting of iN and Cu, and has a specific resistance of 5 × 10 ⁻⁵ Ω · cm or less.

Further, the infrared detecting film may be made of silicon, and the contact layer may be formed between the infrared detecting film and the wiring layer.

The contact layer is made of W, Co, Cu, P
It is preferable to include a silicide of a material containing one element selected from the group consisting of t, Ta and Ti. By forming the contact layer from such a material, the contact resistance between the silicon substrate or the like and the wiring layer can be reduced.

It is preferable that the wiring layer has a width of 1 μm or less and a thickness of 0.2 μm or less. By setting the dimensions of the wiring layer in this manner, the cross-sectional area of the wiring layer can be reduced, and the amount of heat dissipated through the wiring layer from the infrared detector can be reduced.

[0028]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiment 1 FIG.
FIG. 1A is a top view, and FIG. 1B is a cross-sectional view taken along a line II in FIG. 1B. FIG. 2 is a sectional view showing a manufacturing process of the thermal infrared detector of FIG.

In the manufacturing process of the thermal infrared detector 50, first, as shown in FIG. 2A, an insulating film 2 such as silicon oxide is formed on a silicon substrate 1. The insulating film 2 is formed, for example, by two processes, in which an infrared detecting film 6 made of silicon is formed. The infrared detection film 6
For example, a pn junction diode is formed from a single crystal silicon film.

Subsequently, a via hole 7 is formed in the insulating film 2 by using a general photolithography process and an etching process.
Is formed, and the surface of the infrared detecting film 6 is exposed. Also,
Via holes 8 are formed to expose the surface of silicon substrate 1.

Subsequently, the infrared detecting film 6 and the silicon substrate 1 and the infrared detecting film 6 and the external wiring (the reference numeral 12 in FIG.
Is formed to form a metal layer (lower wiring layer) 13 for connection with the metal layer (indicated by). The metal layer 13 is made of, for example, titanium and is formed by a sputtering method. Metal layer 13 immediately after being formed by sputtering
Has a specific resistance of 5 × 10 ⁻⁵ Ω · cm or more.

The metal layer 13 is made of W, Co, C
It is preferable to use a material containing one element selected from the group consisting of u, Pt, Ta and Ti. Such materials include nitride films, silicide films of materials containing these elements,
And alloys.

Next, as shown in FIG. 2B, by performing a heat treatment step, a contact layer is formed on the interface between the silicon substrate 1 and the metal layer 13 and the interface between the infrared detecting film 6 and the metal layer 13. Form 10. The heat treatment step is performed, for example, in a furnace in a reducing atmosphere at a temperature of 600 ° C. or higher.
The contact layer 10 is made of, for example, titanium silicide when titanium is used for the metal layer 13. The contact layer 10 is preferably made of a silicide of a material containing one element selected from the group consisting of W, Co, Cu, Pt, Ta and Ti. By forming such a contact layer 10, the contact resistance between the silicon substrate 1 and the metal layer 13 is reduced. By performing such a heat treatment step, the specific resistance of the metal layer 13 is 5 × 10 ⁻⁵ Ω ·
cm. This is considered to be due to a structural change of the metal layer 13.

Next, as shown in FIG.
A wiring layer (upper wiring layer) 14 is formed on 3. The wiring layer 14 is made of, for example, titanium nitride formed by a sputtering method, and has a specific resistance of 5 × 10 ⁻⁵ Ω · cm or more. As the wiring layer 14, it is preferable to use a material containing one element selected from the group consisting of W, Co, Cu, Pt, Ta and Ti. Such materials include nitride films, silicide films, and alloys of materials containing these elements.

Next, as shown in FIG. 2D, a protective film 11 is formed so as to cover the surface of the silicon substrate 1. The protective film 11 is made of, for example, silicon nitride. Finally, the concave portion 3 is formed by selectively etching the silicon substrate 1 below the infrared detecting film 6. As a result, FIG.
As shown in (b), a thermal infrared detector 50 in which the support leg 4 and the infrared detection unit 5 supported by the support leg 4 are formed on the recess 3 is completed. The metal layer 13 and the wiring layer 14
It is arranged on the support leg 4. Such an infrared detector 50
Are formed in an array as shown in FIG. 8 to form a thermal infrared solid-state imaging device.

In the thermal infrared detector 50 according to the first embodiment, the metal layer 13 and the wiring layer 14 are provided between the silicon substrate 1 and the infrared detecting film 6 and between the infrared detecting film 6 and the external wiring 12. Are electrically connected by the two-layer wiring.
For example, when the metal layer (lower wiring layer) 13 has a specific resistance of 3.8
× 10 ^-5 Ω · cm, a width of 0.5 [mu] m, the film thickness is formed from a titanium layer of 100 Å, a wiring layer (upper wiring layer) 14, the specific resistance is 1.0 × 10 ^-4 Ω · cm, a width Is formed from a titanium nitride layer having a thickness of 0.5 μm and a thickness of 400 °
3. The sheet resistance of the wiring composed of the wiring layer 14 is 15.1
Ω / □. In contrast, in the thermal infrared detector 100 of the conventional structure shown in FIG. 7, the wiring layer 109, the resistivity is 3.8 × 10 ^-5 Ω · cm, a width of 0.5 [mu] m, thickness 50
It is formed from a 0 ° titanium nitride layer and has a sheet resistance of 7.6.
Ω / □.

Therefore, by using the thermal infrared detector 50 according to the first embodiment, the sheet resistance of the wiring can be about twice that of the thermal infrared detector 100 having the conventional structure. As a result, the amount of heat dissipated from the infrared detection unit 5 to the outside through the wiring of the support leg 4 can be reduced to about １ ／, and the sensitivity of the thermal infrared detector 50 can be improved.

Embodiment 2 FIG. 3 shows a thermal infrared detector according to the present embodiment, which is indicated as a whole by 60;
FIG. 3A is a top view, and FIG. 3B is a cross-sectional view in the II-II direction. FIG. 4 is a sectional view showing a manufacturing process of the thermal infrared detector 60 of FIG. In the figure, the same reference numerals as those in FIGS.
Indicates the same or equivalent parts.

In the manufacturing process of the thermal infrared detector 60, first, as shown in FIG. 4A, the metal layer 13 and the contact layer 10 are formed on the silicon substrate 1 in the same process as in the first embodiment.
Etc. are formed.

Next, as shown in FIG. 4B, the metal layer 13 is selectively etched using, for example, a wet etching method, and the contact layer 1 is formed on the bottom surfaces of the via holes 7 and 8.
Leave 0.

Next, as shown in FIG. 4C, a wiring layer 14 made of, for example, titanium nitride is formed by a sputtering method. The specific resistance of the wiring layer 14 is 5 × 10 ⁻⁵ Ω · cm or more.

Next, as shown in FIG. 4D, a protective film 11 made of, for example, silicon nitride is formed so as to cover the surface of the silicon substrate 1. Finally, the silicon substrate 1 under the infrared detecting film 6 is selectively etched to
Is formed, and the thermal infrared detector 60 is completed.

In the thermal infrared detector 60 according to the second embodiment, the electrical connection between the silicon substrate 1 and the infrared detecting film 6 and the electrical connection between the infrared detecting film 6 and the external wiring 12 are made only by the wiring layer 14. It is connected to the.

For example, when the wiring layer 14 has a specific resistance of 1.0 ×
When formed from a titanium nitride layer having a thickness of 10 ⁻⁴ Ω · cm, a width of 0.5 μm, and a thickness of 500 °, the sheet resistance of the wiring layer 14 is 20.0 Ω / □. On the other hand, in the thermal infrared detector 100 having the conventional structure shown in FIG.
Had a sheet resistance of 7.6 Ω / □.

Therefore, by using the thermal infrared detector 60 according to the second embodiment, the sheet resistance of the wiring can be increased to about 2.6 times that of the thermal infrared detector 100 having the conventional structure. As a result, the amount of heat dissipated from the infrared detection unit 5 to the outside can be reduced to about 1/3 of the conventional amount, and the sensitivity of the thermal infrared detector 60 can be improved.

Embodiment 3 FIG. 5 shows a thermal infrared detector according to the present embodiment, which is indicated as a whole by 70.
FIG. 5A is a top view, and FIG. 5B is a cross-sectional view in the III-III direction. FIG. 6 shows the thermal infrared detector 70 of FIG.
FIG. 4 is a cross-sectional view of a manufacturing process. In the drawings, the same reference numerals as those in FIGS. 1 and 2 indicate the same or corresponding parts.

In the manufacturing process of the thermal infrared detector 70, first, as shown in FIG. 6A, the metal layer 13 and the contact layer 10 are formed on the silicon substrate 1 in the same process as in the first embodiment.
Etc. are formed.

Next, as shown in FIG. 6B, an intermediate wiring layer 15 is formed so as to fill the via holes 7 and 8. The intermediate wiring layer 15 is made of, for example, tungsten formed by a CVD method, and has a specific resistance of 5 × 10 ⁻⁵ Ω · cm.
It is as follows. The intermediate wiring layer is made of Si, W, WSi,
It is preferable to be formed from one material selected from the group consisting of TiN and Cu.

Next, as shown in FIG. 6C, the metal layer 13 and the intermediate wiring layer 15 are etched by, for example, a dry etching method so that the metal layer 1 is formed only in the via holes 7 and 8.
3. The intermediate wiring layer 15 is left.

Next, as shown in FIG. 6D, connection is made between the silicon substrate 1 and the infrared detecting film 6, and between the infrared detecting film 6 and the external wiring (indicated by reference numeral 12 in FIG. 5). The wiring layer 14 is formed as described above. The wiring layer 14 is formed by, for example, forming the wiring layer 14 made of titanium nitride by a sputtering method. The specific resistance of the wiring layer 14 is 5 × 10 ⁻⁵ Ω · cm or more. Subsequently, a protective film 11 made of, for example, silicon nitride is formed so as to cover the surface of the silicon substrate 1. Finally, the silicon substrate 1 below the infrared detecting film 6 is selectively etched to form the concave portion 3 and the thermal infrared detector 7
0 is completed.

In the thermal infrared detector 70 according to the third embodiment, the specific resistance is 5 × 1 between the silicon substrate 1 and the infrared detecting film 6 and between the infrared detecting film 6 and the external wiring 12.
It is electrically connected by one wiring layer 14 of 0 ^-5 Ω · cm or more. For this reason, the thermal conductivity of the wiring layer 14 is reduced, the dissipation of heat from the infrared detector 5 is reduced, and the sensitivity of the infrared detector 70 can be improved.

In the thermal infrared detector 70, the intermediate wiring layer 15 having a specific resistance of less than 5 × 10 ⁻⁵ Ω · cm is provided between the contact layer 10 and the wiring layer 14 in the via holes 7 and 8. Are formed. Therefore, the contact resistance between the wiring layer 14 and the silicon substrate 1 can be reduced, and the driving performance and reliability of the thermal infrared detector 70 are improved.

In the first to third embodiments, the case where the infrared detecting film 6 is a pn junction diode made of silicon has been described. However, a bolometer made of vanadium oxide or the like and a pyroelectric body made of BS (BaSrTiO ₃ ) are used. It is also possible. In such a case, the contact layer 10 made of the silicide compound of the wiring material is not formed on the infrared detecting film 6.

[0054]

As is clear from the above description, in the thermal infrared solid-state imaging device according to the present invention, the thermal conductivity of the wiring layer connected to the infrared detecting film is reduced, and the heat from the infrared detecting film is reduced. Dissipation can be reduced to obtain a high-sensitivity thermal infrared solid-state imaging device.

Further, by providing an intermediate wiring layer having a low specific resistance on the contact layer, the contact resistance can be reduced and a thermal infrared solid-state imaging device having high driving performance and high reliability can be obtained.

[Brief description of the drawings]

FIG. 1 is a thermal infrared detector according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a manufacturing process of the thermal infrared detector according to the first embodiment of the present invention.

FIG. 3 is a thermal infrared detector according to a second embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a manufacturing process of the thermal infrared detector according to the second embodiment of the present invention.

FIG. 5 is a thermal infrared detector according to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a manufacturing process of the thermal infrared detector according to the third embodiment of the present invention.

FIG. 7 is a conventional thermal infrared detector.

FIG. 8 shows a conventional thermal infrared solid-state imaging device.

[Explanation of symbols]

Reference Signs List 1 silicon substrate, 2 insulating film, 3 concave portion, 4 supporting leg, 5 infrared detecting section, 6 infrared detecting film, 7, 8 via hole, 10 contact layer, 11 protective film, 12
External wiring, 13 metal layer, 14 wiring layer, 15 intermediate wiring layer, 50, 60, 70 Thermal infrared detector.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/768 H04N 5/33 27/14 H01L 21/88 M 37/02 21/90 C H04N 5/33 27/14 K (72) Inventor Junji Nakanishi 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric Corporation (72) Inventor Yasuhiro Osasayama 2-3-2 Marunouchi, Chiyoda-ku, Tokyo Mitsubishi Electric In-house F term (reference) 2G065 AB02 BA12 BA13 BA14 BA34 BE08 CA13 DA18 2G066 BA04 BA09 BA51 BA55 BB09 CA02 4M118 AA01 AA10 AB01 BA30 CA03 CA32 CB12 CB14 5C024 AX06 CX41 CY47 EX15 5F033 HH07 HH HH HH HH HH HH HH HH HH JJ05 JJ06 JJ07 JJ11 JJ18 JJ19 JJ21 JJ25 JJ27 JJ28 JJ30 JJ32 JJ33 JJ34 KK01 KK06 MM05 NN06 PP15 QQ09 QQ37 QQ48 QQ70 QQ73 RR04 RR06 VV00 WW00 WW01 WW02 XX00 XX09

Claims (18)

[Claims] 1. A method for manufacturing a thermal infrared solid-state imaging device in which an infrared detecting section is supported by supporting legs on a concave portion formed in a silicon substrate, wherein an infrared detecting film is formed at a predetermined position on the silicon substrate. Forming an insulating film on the silicon substrate so as to cover the infrared detection film; forming a via hole in the insulating film on the silicon substrate to expose the surface of the silicon substrate in the via hole Forming a metal layer so as to cover the surface of the silicon substrate exposed in the via hole, and heat-treating the silicon substrate to form a contact layer between the metal layer and the silicon substrate A wiring step of forming a high-resistance wiring layer having a high specific resistance for electrically connecting the contact layer and the infrared detection film after the heat treatment step; and an infrared detection unit including the infrared detection film, Forming a recess in the silicon substrate below the infrared detection film so as to be supported by the support leg on which the high resistance wiring layer is formed. Method. 2. The heat treatment step covers the surface of the silicon substrate exposed in the via hole and forms the metal layer so as to electrically connect the silicon substrate and the infrared detection film. Forming the contact layer between the layer and the silicon substrate, wherein the wiring step comprises forming a high-resistance wiring layer having a higher specific resistance than the heat-treated metal layer on the metal layer. The method according to claim 1, further comprising: 3. The heat treatment step includes a step of forming a metal layer covering at least a surface of the silicon substrate exposed in the via hole, and forming the contact layer between the metal layer and the silicon substrate. 2. The method according to claim 1, wherein the wiring step is performed after removing the metal layer while leaving the contact layer. 4. The heat treatment step forms a metal layer covering at least the surface of the silicon substrate exposed in the via hole, and an intermediate wiring layer filling at least the via hole. Forming the contact layer between the metal layer and the intermediate wiring layer such that the metal layer and the intermediate wiring layer remain only in the via hole. The method according to claim 1, wherein: 5. The method according to claim 1, further comprising: forming the via hole in the insulating film on the infrared detecting film, exposing a surface of the infrared detecting film in the via hole. Forming the metal layer so as to cover the surface of the infrared detection film exposed in the via hole, and forming the contact layer also between the metal layer and the infrared detection film. The production method according to claim 1, wherein: 6. The high-resistance wiring layer has a specific resistance of 5 × 10
^The method according to any one of claims 1 to 4, wherein the resistivity is at least ^-5? Cm. 7. The method according to claim 1, wherein the heat treatment step is a step of heating at least an interface between the silicon substrate and the metal layer to 600 ° C. or more to form the contact layer at the interface. 5. The production method according to any one of items 1 to 4. 8. The method according to claim 1, wherein the metal layer is made of W, Co, Cu, Pt,
The method according to any one of claims 1 to 4, further comprising one element selected from the group consisting of Ta and Ti. 9. The method according to claim 9, wherein the contact layer is formed of W, Co, Cu,
The method according to any one of claims 1 to 4, further comprising a silicide of a material containing one element selected from the group consisting of Pt, Ta, and Ti. 10. A thermal infrared solid-state imaging device in which an infrared detecting section is supported by supporting legs on a concave portion formed in a silicon substrate, comprising: a silicon substrate; and a supporting member mounted on the concave portion provided in the silicon substrate. An infrared detection unit supported by the leg, an infrared detection film provided on the infrared detection unit, a wiring layer formed on the support leg and electrically connecting the infrared detection film and the silicon substrate; A contact layer formed between the wiring layer and the silicon substrate, wherein the wiring layer contains a material having a high specific resistance so that the thermal conductivity of the wiring layer is reduced. Type infrared solid-state imaging device. 11. The specific resistance of the wiring layer is 5 × 10 ⁻⁵ Ω.
11. The thermal infrared solid-state imaging device according to claim 10, wherein the temperature is not less than cm. 12. The wiring layer has a specific resistance of 5 × 10 ⁻⁵ Ω.
・ Lower wiring layer smaller than cm and specific resistance of 5 × 10 ⁻⁵ Ω
11. The thermal infrared solid-state imaging device according to claim 10, wherein the thermal infrared solid-state imaging device has a laminated structure with an upper wiring layer of at least cm. 13. The method according to claim 13, wherein the lower wiring layer is formed of W, Co, Cu,
The thermal infrared solid-state imaging device according to claim 12, comprising one element selected from the group consisting of Pt, Ta, and Ti. 14. The via hole formed on the insulating film formed on the silicon substrate, wherein the wiring layer is formed on the insulating film such that the surface of the silicon substrate is exposed. The thermal infrared solid-state imaging device according to claim 10, further comprising an intermediate wiring layer formed so as to embed the pattern. 15. The semiconductor device according to claim 15, wherein the intermediate wiring layer is made of Si, W, WS.
15. The thermal infrared solid-state imaging device according to claim 14, wherein the thermal infrared solid-state imaging device is made of one material selected from the group consisting of i, TiN, and Cu, and has a specific resistance of 5 × 10 ⁻⁵ Ω · cm or less. . 16. The thermal infrared ray according to claim 10, wherein said infrared ray detection film is made of silicon, and said contact layer is also formed between said infrared ray detection film and said wiring layer. Solid-state imaging device. 17. The method according to claim 17, wherein the contact layer is made of W, Co, C
17. The thermal infrared solid-state imaging device according to claim 10, comprising a silicide of a material containing one element selected from the group consisting of u, Pt, Ta, and Ti. 18. The thermal infrared solid-state imaging device according to claim 10, wherein the wiring layer has a width of 1 μm or less and a thickness of 0.2 μm or less.