JP2002171012A - Exchange coupled device, spin-valve-type thin-film magnetic element, and magnetic head - Google Patents

Exchange coupled device, spin-valve-type thin-film magnetic element, and magnetic head

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Publication number
JP2002171012A
JP2002171012A JP2000368922A JP2000368922A JP2002171012A JP 2002171012 A JP2002171012 A JP 2002171012A JP 2000368922 A JP2000368922 A JP 2000368922A JP 2000368922 A JP2000368922 A JP 2000368922A JP 2002171012 A JP2002171012 A JP 2002171012A
Authority
JP
Japan
Prior art keywords
layer
film
underlayer
alloy
exchange coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000368922A
Other languages
Japanese (ja)
Inventor
Koujirou Ogami
公二郎 屋上
Masakiyo Tsunoda
匡清 角田
Ken Takahashi
高橋　　研
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Zosen Corp
Original Assignee
Hitachi Zosen Corp
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Filing date
Publication date
Application filed by Hitachi Zosen Corp filed Critical Hitachi Zosen Corp
Priority to JP2000368922A priority Critical patent/JP2002171012A/en
Publication of JP2002171012A publication Critical patent/JP2002171012A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
  • Hall/Mr Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an exchange coupled device that has a high unidirectional anisotropy constant Jk, and can maintain various characteristics, even if the thickness of a film is reduced. SOLUTION: The exchange coupled device 1 is adopted. In the exchange junction device 1, a foundation layer 3, an antiferromagnetism layer 4, and a ferromagnetic layer 5 are successively laminated on a substrate 2; and the foundation layer 3 comprises the lamination film of first and second foundation films 3a and 3b, one of the foundation films 3a and 3b being a Cu film, and the other being an Ni-Fe or a Co-Fe alloy film. Since the foundation layer 3 is in the lamination structure of the Ni-Fe or Co-Fe alloy film, the thickness of the foundation films 3a and 3b can be thinned as compared with a single foundation layer; crystal grain growth in the foundation layer 3 is inhibited for flattening the foundation layer 3 and the interface of the antiferromagnetism layer 4; the interface between the antiferromagnetism layer 4 and a ferromagnetic body layer 5 is also planarized; and a contact probability via the surface (111) between the antiferromagnetism layer 4 and ferromagnetic body layer 5 is increased, thus improving the exchange coupled magnetic field and the unidirectional anisotropy constant.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、交換結合素子及び
スピンバルブ型磁気抵抗素子並びに磁気ヘッドに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exchange coupling element, a spin valve type magnetoresistive element, and a magnetic head.

【０００２】[0002]

【従来の技術】従来、磁気抵抗素子の構造としては、基
体の表面上に、非磁性体層（スペーサ）を挟んで強磁性
体層を複数回積層した構造体からなる人工格子型（Ａ）
と、基体の表面上に、非磁性体層（スペーサ）を挟んで
強磁性体層を積層し、最後に設けた強磁性体層の表面上
に反強磁性体層を形成した構造体からなるスピンバルブ
型（Ｂ）が広く知られている。2. Description of the Related Art Conventionally, the structure of a magnetoresistive element is an artificial lattice type (A) composed of a structure in which a ferromagnetic layer is laminated a plurality of times on a surface of a base with a nonmagnetic layer (spacer) interposed therebetween.
And a structure in which a ferromagnetic layer is laminated on the surface of the base with a nonmagnetic layer (spacer) interposed therebetween, and an antiferromagnetic layer is formed on the surface of the lastly provided ferromagnetic layer. The spin valve type (B) is widely known.

【０００３】ハードディスクに代表される磁気記録媒体
は、更なる記録密度の向上が期待されており、これに伴
って上記磁気抵抗素子を備えたヘッドにも更なる高性能
化が求められている。なかでも、再生ヘッドの狭ギャッ
プ化に有利なスピンバルブ型においては、隣接する強磁
性体層と反強磁性体層からなる積層膜の薄型化が必須課
題となっている。[0003] A magnetic recording medium represented by a hard disk is expected to have a further improved recording density, and accordingly, a head having the above-described magnetoresistive element is required to have a higher performance. In particular, in the spin valve type, which is advantageous for narrowing the gap of the reproducing head, it is essential to reduce the thickness of the laminated film including the adjacent ferromagnetic layer and antiferromagnetic layer.

【０００４】このため、いかに極薄領域においてスピン
バルブ膜の特性を維持するかが重要である。強磁性体層
と反強磁性体層からなる交換結合素子の界面に誘導され
る交換磁気異方性は、スピンバルブ膜の機能上、ピン層
たる強磁性体層の磁化の固定という中心的な役割を果た
すが、これを極薄膜下において有効かつ安定に引き出す
ことは重要な技術課題である。この交換磁気異方性は、
強磁性体層と反強磁性体層の界面における単位面積当た
りの交換結合エネルギー（いわゆる交換結合の強さ)を
表す一方向異方性定数Ｊｋによって評価される。このＪ
ｋは、ＭsとｄfとＨexとの積で表され、Ｍsは強磁性体
層の飽和磁化であって振動試料型磁力計（ＶＳＭ）にて
測定され、ｄfは強磁性体層の膜厚であり、Ｈexは、反
強磁性層と強磁性層との交換結合磁界であって、前記の
磁化曲線においてピン層の磁化の変化に対応するMHルー
プ中心のゼロ磁界点からのシフト量、または磁気抵抗変
化曲線においてピン層の磁化方向変化に伴って生じるMR
ループの中心のゼロ磁界点からのシフト量として定義さ
れる。[0004] Therefore, it is important how to maintain the characteristics of the spin valve film in an extremely thin region. The exchange magnetic anisotropy induced at the interface between the exchange coupling device consisting of the ferromagnetic layer and the antiferromagnetic layer is a central factor in the function of the spin valve film, that is, the pinning of the magnetization of the ferromagnetic layer, which is the pin layer. Although it plays a role, it is an important technical problem to effectively and stably extract it under an extremely thin film. This exchange magnetic anisotropy is
It is evaluated by a one-way anisotropy constant Jk representing exchange coupling energy per unit area (so-called exchange coupling strength) at the interface between the ferromagnetic layer and the antiferromagnetic layer. This J
k is represented by the product of Ms, df and Hex, Ms is the saturation magnetization of the ferromagnetic layer and is measured by a vibrating sample magnetometer (VSM), and df is the film thickness of the ferromagnetic layer. Hex is the exchange coupling magnetic field between the antiferromagnetic layer and the ferromagnetic layer, and the amount of shift from the zero magnetic field point at the center of the MH loop corresponding to the change in the magnetization of the pinned layer in the magnetization curve, or MR generated by the change in the magnetization direction of the pinned layer in the resistance change curve
It is defined as the amount of shift from the zero field point at the center of the loop.

【０００５】ハードディスクドライブ等の磁気記録装置
は、実使用下において内部温度が１００℃以上に上昇す
ることもあり、また、磁気抵抗素子部はセンス電流によ
る自己発熱によって更に数十℃上昇する。このため、反
強磁性層によってピン層に誘導された交換磁気異方性が
低下し、一方向にピン止めされたピン層の磁化が外部磁
界によって容易に乱される。この耐熱性の低下は、反強
磁性層の膜厚が低下するほど顕著になる。ところで、交
換結合素子において全膜厚に占める割合は反強磁性層が
最も大きいため、素子の薄膜化のためには反強磁性層の
膜厚を減らすことが必要となる。従ってＪｋの更なる向
上が求められている。In a magnetic recording device such as a hard disk drive, the internal temperature may rise to 100 ° C. or more in actual use, and the magnetoresistive element further rises by several tens ° C. due to self-heating caused by a sense current. For this reason, the exchange magnetic anisotropy induced in the pin layer by the antiferromagnetic layer is reduced, and the magnetization of the pin layer pinned in one direction is easily disturbed by an external magnetic field. This decrease in heat resistance becomes more pronounced as the thickness of the antiferromagnetic layer decreases. Incidentally, the ratio of the antiferromagnetic layer to the total film thickness in the exchange-coupled device is the largest. Therefore, it is necessary to reduce the film thickness of the antiferromagnetic layer in order to make the device thinner. Therefore, further improvement of Jk is required.

【０００６】また、スピンバルブ型の磁気抵抗素子の製
造工程においては、静電気放電による破壊現象（いわゆ
る静電破壊現象）が問題視されており、磁気抵抗素子自
体の破壊に至らないまでも、静電気放電による熱と磁界
でピン層たる強磁性体層の磁化方向が反転してしまう場
合がある。これらを防ぐためには、Ｊｋを大きくするこ
とが有効で、たとえばＪｋとして経験的に０．２８ｅｒ
ｇ／ｃｍ2 (２．８×１０~4 Ｊ／ｍ2)以上あることが望
まれている。これは、Hexに換算すると、Ｍｓが１５０
０ｅｍｕ／ｃｍ3 (１５００ｋＡ／ｍ)のCo~Fe膜１．８
ｎｍの場合で約１ｋＯｅ（８０ｋＡ／ｍ）以上となる。In the manufacturing process of a spin-valve type magnetoresistive element, a destruction phenomenon due to electrostatic discharge (so-called electrostatic destruction phenomenon) is regarded as a problem. The magnetization direction of the ferromagnetic layer as the pinned layer may be reversed by heat and a magnetic field due to the discharge. In order to prevent these problems, it is effective to increase Jk.
g / cm 2 that is (2.8 × 10 ~ 4 J / m 2) or more are desired. This means that when converted to Hex, Ms is 150
Co-Fe film 1.8 of 0 emu / cm 3 (1500 kA / m)
In the case of nm, it is about 1 kOe (80 kA / m) or more.

【０００７】[0007]

【発明が解決しようとする課題】従来から、反強磁性体
層を構成する材料の一例として規則系材料であるＮｉ-
Ｍｎ系合金が知られている。このＮｉ-Ｍｎ系合金は
０．３４〜０．５ｅｒｇ／ｃｍ2の一方向異方性定数Ｊ
ｋを示すので、交換結合素子の反強磁性体層として有望
とされている。しかし、０．３４ｅｒｇ／ｃｍ2以上の
Ｊｋを発現させるためには、反強磁性体層の膜厚を２０
nm以上にすることが必要であり、磁気抵抗素子のギャッ
プ長を３０ｎｍ以下にすることが困難となり、高記録密
度化に対応できなくなるという問題があった。Conventionally, as an example of a material constituting an antiferromagnetic layer, Ni-
Mn-based alloys are known. This Ni—Mn alloy has a one-way anisotropy constant J of 0.34 to 0.5 erg / cm 2.
Since it shows k, it is promising as an antiferromagnetic layer of an exchange-coupled device. However, in order to express Jk of 0.34 erg / cm 2 or more, the thickness of the antiferromagnetic material layer needs to be 20 μm.
nm or more, and it is difficult to reduce the gap length of the magnetoresistive element to 30 nm or less, and there is a problem that it is impossible to cope with high recording density.

【０００８】また、反強磁性体層を構成する材料の別の
例として不規則系材料であるＭｎ-Iｒ合金が知られてい
る。このＭｎ-Iｒ合金は、１０ｎｍ以下の膜厚でＪｋの
飽和値を得ることが可能である。しかし、Ｍｎ-Iｒ合金
を用いた場合に強磁性膜に誘導されるＪｋは、上記のＮ
ｉ-Ｍｎ系合金の場合の半分程度であり、０．２８ｅｒ
ｇ／ｃｍ2に至らない。このため、実使用あるいは作製
工程においてピン層強磁性膜の磁化方向を強固に固定す
ることができず、磁気抵抗素子の特性が低下し、また、
静電気放電による不良発生を防止できないという問題が
あった。[0008] As another example of a material constituting the antiferromagnetic layer, a Mn-Ir alloy which is an irregular material is known. This Mn-Ir alloy can obtain a saturation value of Jk at a film thickness of 10 nm or less. However, when the Mn-Ir alloy is used, Jk induced in the ferromagnetic film is equal to the above-mentioned Nk.
It is about half that of the i-Mn alloy and 0.28er
g / cm 2 . For this reason, the magnetization direction of the pinned ferromagnetic film cannot be firmly fixed in actual use or in the manufacturing process, and the characteristics of the magnetoresistive element deteriorate.
There has been a problem that the occurrence of defects due to electrostatic discharge cannot be prevented.

【０００９】更に最近では、規則系材料からなる反強磁
性体層の下地膜として、Ta膜上にＮｉ-Ｆｅ合金膜また
はＣｏ-Ｆｅ合金膜等の単層構造の下地層を形成するこ
とによって、反強磁性層の（１１１）面を優先配向させ
て構成した交換結合素子が提案されている。これにより
Ｊｋの向上が可能とされている。More recently, a single-layered underlayer such as a Ni—Fe alloy film or a Co—Fe alloy film has been formed on a Ta film as an underlayer for an antiferromagnetic layer made of a regular material. There has been proposed an exchange coupling element in which the (111) plane of the antiferromagnetic layer is preferentially oriented. Thus, it is possible to improve Jk.

【００１０】反強磁性体層を（１１１）面配向させるに
は単層下地層の膜厚をある程度厚くする必要がある。必
要厚みの下限は、下地層材料によって異なる。しかし、
下地層が厚くなるとともに結晶粒成長が進行し、（１１
１）面を介しての接触確率が小さくなり、高いＪｋを得
ることが困難となる。このため、単層下地膜で得られる
Ｊｋは最大でも０．２７ｅｒｇ／ｃｍ2程度であった。In order to orient the antiferromagnetic layer in the (111) plane, it is necessary to increase the thickness of the single-layer underlayer to some extent. The lower limit of the required thickness depends on the material of the underlayer. But,
As the underlayer becomes thicker, crystal grain growth proceeds, and (11)
1) The probability of contact through the surface is reduced, making it difficult to obtain a high Jk. For this reason, Jk obtained from the single-layer underlayer was at most about 0.27 erg / cm 2 .

【００１１】本発明は、上記事情に鑑みてなされたもの
であって、高い一方向異方性定数Ｊｋを有し、かつ薄膜
化しても諸特性を維持できる交換結合素子及びスピンバ
ルブ型磁気抵抗素子及び磁気ヘッドを提供することを目
的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has an exchange coupling element and a spin-valve magnetoresistive element having a high one-way anisotropy constant Jk and capable of maintaining various characteristics even when thinned. It is an object to provide an element and a magnetic head.

【００１２】[0012]

【課題を解決するための手段】上記の目的を達成するた
めに、本発明は以下の構成を採用した。本発明の交換結
合素子は、基体上に、下地層、反強磁性体層、及び該反
強磁性体層と交換結合する強磁性層が順次積層されてな
り、前記下地層が、少なくとも２以上の下地膜からな
り、前記下地膜のいずれか１つがＣｕ膜からなるととも
に他のいずれか１つがＮｉ-Ｆｅ合金膜またはＣｏ-Ｆｅ
合金膜からなることを特徴とする。In order to achieve the above object, the present invention employs the following constitution. The exchange-coupled device of the present invention includes a base layer, a base layer, an antiferromagnetic layer, and a ferromagnetic layer exchange-coupled to the antiferromagnetic layer, which are sequentially stacked on a substrate, wherein the base layer has at least two or more layers. One of the underlayers is made of a Cu film, and the other one is a Ni-Fe alloy film or Co-Fe
It is characterized by being made of an alloy film.

【００１３】係る交換結合素子によれば、下地層を構成
する下地膜のいずれか１つがＣｕ膜であり、このＣｕ膜
は１ｎｍ程度の極薄厚でも（１１１）面が優先配向する
能力に優れているので、Cu膜を含む下地層上に反強磁性
体層を積層することによりエピタキシャル成長した反強
磁性体層は（１１１）面配向し、これにより反強磁性体
層と固定磁性体層との交換結合磁界Ｈex及び一方向異方
性定数Ｊｋが大きくなり、交換磁気異方性を向上させる
ことが可能になる。According to such an exchange coupling device, one of the base films constituting the base layer is a Cu film, and this Cu film has an excellent ability to preferentially orient the (111) plane even at an extremely thin thickness of about 1 nm. Therefore, the antiferromagnetic material layer epitaxially grown by stacking the antiferromagnetic material layer on the underlayer including the Cu film is oriented in the (111) plane, thereby forming the antiferromagnetic material layer and the fixed magnetic material layer. The exchange coupling magnetic field Hex and the one-way anisotropy constant Jk are increased, and the exchange magnetic anisotropy can be improved.

【００１４】更に、下地層をＣｕ膜とＮｉ-Ｆｅ合金膜
またはＣｏ-Ｆｅ合金膜との積層構造にすることによっ
て、下地層が単層の場合と比較してそれぞれの膜の膜厚
を薄くすることができ、これにより下地層における結晶
粒成長が抑制されて下地層と反強磁性体層の界面が平坦
化するので、下地層上にエピタキシャル成長する反強磁
性体層及び強磁性体層の界面も平坦化され、反強磁性体
層及び強磁性体層間の（１１１）面を介しての接触確率
が高くなり、同じ膜厚の単層下地層の場合よりも交換結
合磁界Ｈex及び一方向異方性定数Ｊｋを向上させること
が可能になる。Further, by forming the underlying layer to have a laminated structure of a Cu film and a Ni—Fe alloy film or a Co—Fe alloy film, the thickness of each film can be reduced as compared with the case where the underlying layer is a single layer. As a result, crystal grain growth in the underlayer is suppressed and the interface between the underlayer and the antiferromagnetic layer is flattened, so that the antiferromagnetic layer and the ferromagnetic layer epitaxially grown on the underlayer can be formed. The interface is also flattened, the contact probability between the antiferromagnetic layer and the ferromagnetic layer via the (111) plane is increased, and the exchange coupling magnetic field Hex and the unidirectionality are higher than in the case of a single-layer underlayer having the same thickness. It is possible to improve the anisotropy constant Jk.

【００１５】また本発明の交換結合素子は、先に記載の
交換結合素子であって、前記下地層の全層厚が１ｎｍ以
上５ｎｍ以下であり、前記各下地膜の各膜厚がそれぞれ
０．５ｎｍ以上１．５ｎｍ以下であることを特徴とす
る。The exchange-coupled device of the present invention is the exchange-coupled device described above, wherein the total thickness of the underlayer is 1 nm or more and 5 nm or less, and each of the underlayers has a thickness of 0.1 nm or less. It is not less than 5 nm and not more than 1.5 nm.

【００１６】係る交換結合素子によれば、下地層の全層
厚が１ｎｍ以上なので下地層の（１１１）配向した結晶
性を維持することが可能になり、また全層厚が５ｎｍ以
下であるので交換結合素子を磁気抵抗素子に用いた場合
に検出電流のシャントロスを低減することが可能にな
る。更に、各下地膜の各膜厚がそれぞれ０．５ｎｍ以上
であるので、各下地膜の結晶性を維持することが可能に
なり、また各膜厚が１．５ｎｍ以下なので検出電流のシ
ャントロスを低減することが可能になる。According to the exchange coupling device, since the total thickness of the underlayer is 1 nm or more, it is possible to maintain the (111) -oriented crystallinity of the underlayer, and since the total thickness of the underlayer is 5 nm or less. When the exchange coupling element is used for the magnetoresistive element, the shunt loss of the detection current can be reduced. Furthermore, since each film thickness of each under film is 0.5 nm or more, it is possible to maintain the crystallinity of each under film, and since each film thickness is 1.5 nm or less, the shunt loss of the detection current is reduced. It becomes possible to reduce.

【００１７】また本発明の交換結合素子は、先に記載の
交換結合素子であって、前記下地層が、基体に隣接する
第１下地膜と、前記反強磁性層に隣接する第２下地膜と
の積層膜からなり、前記第１、第２下地膜のいずれか一
方がＣｕ膜であるとともに他方がＮｉ-Ｆｅ合金膜また
はＣｏ-Ｆｅ合金膜であることを特徴とする。The exchange coupling element of the present invention is the exchange coupling element described above, wherein the underlayer is a first underlayer adjacent to the base and a second underlayer adjacent to the antiferromagnetic layer. Wherein one of the first and second underlayers is a Cu film and the other is a Ni—Fe alloy film or a Co—Fe alloy film.

【００１８】上記の交換結合素子によれば、第１、第２
下地膜からなる２層構造の下地層であっても、多層構造
の下地層の場合と比較して一方向異方性定数Ｊｋが低下
することがない。そして、２層構造の下地層は、多層構
造の下地層よりも層厚を薄くすることができるので、検
出電流のシャントロスを更に低減することが可能にな
る。According to the above exchange coupling element, the first and second exchange coupling elements are provided.
Even in the case of an underlayer having a two-layer structure composed of an underlayer, the unidirectional anisotropy constant Jk does not decrease as compared with the case of an underlayer having a multilayer structure. Since the underlayer having the two-layer structure can be made thinner than the underlayer having the multilayer structure, the shunt loss of the detection current can be further reduced.

【００１９】また本発明の交換結合素子は、先に記載の
交換結合素子であって、前記下地層の全層厚が１ｎｍ以
上３ｎｍ以下であり、前記第１、第２下地膜の各膜厚が
それぞれ０．５ｎｍ以上１．５ｎｍ以下であることを特
徴とする。The exchange coupling device of the present invention is the exchange coupling device as described above, wherein the total thickness of the underlayer is 1 nm or more and 3 nm or less, and the thickness of each of the first and second underlayers is Are not less than 0.5 nm and not more than 1.5 nm, respectively.

【００２０】係る交換結合素子によれば、下地層の全層
厚が１ｎｍ以上なので下地層の積層構造を維持すること
が可能になり、また全層厚が３ｎｍ以下であるので交換
結合素子を磁気抵抗素子に用いた場合に検出電流のシャ
ントロスを低減することが可能になる。更に、第１、第
２下地膜の各膜厚がそれぞれ０．５ｎｍ以上であるの
で、各下地膜の結晶性を維持することが可能になり、ま
た各膜厚が１．５ｎｍ以下なので検出電流のシャントロ
スを低減することが可能になる。According to the exchange coupling element, the total thickness of the underlayer is 1 nm or more, so that the laminated structure of the underlayer can be maintained. Further, since the total thickness of the underlayer is 3 nm or less, the exchange coupling element can be made magnetic. When used for a resistance element, the shunt loss of the detection current can be reduced. Furthermore, since the thickness of each of the first and second underlayers is 0.5 nm or more, the crystallinity of each underlayer can be maintained. Can be reduced.

【００２１】また、前記反強磁性体層と前記強磁性体層
との界面に誘導される一方向異方性定数Ｊｋが０．２８
ｅｒｇ／ｃｍ2以上であることが好ましい。一方向異方
性定数Ｊｋが０．２８ｅｒｇ／ｃｍ2以上であれば、強
磁性体層の磁化方向を強く固定でき、外部磁界による強
磁性体層の磁化の変動を防止して交換結合素子の特性を
向上させることが可能になり、また製造時における静電
気放電による強磁性体層の磁化方向の反転を防止して不
良率を低下させることが可能になる。The one-way anisotropy constant Jk induced at the interface between the antiferromagnetic layer and the ferromagnetic layer is 0.28.
erg / cm 2 or more. When the one-way anisotropy constant Jk is 0.28 erg / cm 2 or more, the magnetization direction of the ferromagnetic layer can be strongly fixed, the fluctuation of the magnetization of the ferromagnetic layer due to an external magnetic field can be prevented, and the exchange coupling element can be fixed. The characteristics can be improved, and the reversal of the magnetization direction of the ferromagnetic layer due to electrostatic discharge at the time of manufacturing can be prevented, and the defect rate can be reduced.

【００２２】また、本発明のスピンバルブ型磁気抵抗素
子は、先のいずれかに記載の交換結合素子を備えたこと
を特徴とする。即ち、本発明のスピンバルブ型磁気抵抗
素子は、基体上に、下地層、反強磁性体層、及び該反強
磁性体層と交換結合する強磁性層が順次積層されてな
り、前記下地層が、少なくとも２以上の下地膜からな
り、前記下地膜のいずれか１つがＣｕ膜からなるととも
に他のいずれか１つがＮｉ-Ｆｅ合金膜またはＣｏ-Ｆｅ
合金膜からなる先のいずれかに記載の交換結合素子を備
えたことを特徴とする。特に前記下地層は、基体に隣接
する第１下地膜と、前記反強磁性層に隣接する第２下地
膜との積層膜からなり、前記第１、第２下地膜のいずれ
か一方がＣｕからなるとともに他方がＮｉ-Ｆｅ合金ま
たはＣｏ-Ｆｅ合金からなることが好ましい。上記のス
ピンバルブ型磁気抵抗素子の具体例として、上記の交換
結合素子の強磁性体上に、非磁性高電導体層と別の強磁
性体層を積層したものを例示できる。According to a second aspect of the present invention, there is provided a spin-valve magnetoresistive element including the exchange coupling element described above. That is, the spin-valve magnetoresistive element of the present invention comprises a base layer, a base layer, an antiferromagnetic layer, and a ferromagnetic layer exchange-coupled to the antiferromagnetic layer, which are sequentially stacked on a substrate. Is composed of at least two or more base films, and one of the base films is made of a Cu film and the other is made of a Ni—Fe alloy film or a Co—Fe film.
An exchange coupling element according to any one of the foregoing, comprising an alloy film. In particular, the underlayer is formed of a laminated film of a first underlayer adjacent to the base and a second underlayer adjacent to the antiferromagnetic layer, and one of the first and second underlayers is made of Cu. And the other is preferably made of a Ni—Fe alloy or a Co—Fe alloy. As a specific example of the spin-valve magnetoresistive element, a nonmagnetic high-conductivity layer and another ferromagnetic layer may be laminated on the ferromagnetic material of the exchange coupling element.

【００２３】次に、本発明の交換結合素子をトンネル型
磁気抵抗素子に適用しても良い。即ち、このトンネル型
磁気抵抗素子は、基体上に、下地層、反強磁性体層、及
び該反強磁性体層と交換結合する強磁性層が順次積層さ
れてなり、前記下地層が、少なくとも２以上の下地膜か
らなり、前記下地膜のいずれか１つがＣｕ膜からなると
ともに他のいずれか１つがＮｉ-Ｆｅ合金膜またはＣｏ-
Ｆｅ合金膜からなる先のいずれかに記載の交換結合素子
を備えたことを特徴とする。特に前記下地層は、基体に
隣接する第１下地膜と、前記反強磁性層に隣接する第２
下地膜との積層膜からなり、前記第１、第２下地膜のい
ずれか一方がＣｕからなるとともに他方がＮｉ-Ｆｅ合
金またはＣｏ-Ｆｅ合金からなることが好ましい。上記
トンネル型磁気抵抗素子の具体例として、上記の交換結
合素子の強磁性体層上に、絶縁膜と別の強磁性体層を積
層したものを例示できる。Next, the exchange coupling element of the present invention may be applied to a tunnel type magnetoresistive element. That is, this tunnel type magnetoresistive element has a base layer, an antiferromagnetic layer, and a ferromagnetic layer exchange-coupled to the antiferromagnetic layer, which are sequentially stacked on a base, and the base layer has at least Two or more underlayers, one of the underlayers being a Cu film and the other one being a Ni—Fe alloy film or Co—
An exchange coupling element according to any one of the foregoing, comprising an Fe alloy film. In particular, the underlayer includes a first underlayer adjacent to the base and a second underlayer adjacent to the antiferromagnetic layer.
It is preferable that the first and second underlayers are made of Cu and the other is made of a Ni—Fe alloy or a Co—Fe alloy. As a specific example of the tunnel type magnetoresistive element, an example in which an insulating film and another ferromagnetic layer are stacked on the ferromagnetic layer of the exchange coupling element can be exemplified.

【００２４】次に、本発明の交換結合素子を磁気式メモ
リに適用しても良い。即ち、この磁気式メモリは、基体
上に、下地層、反強磁性体層、及び該反強磁性体層と交
換結合する強磁性層が順次積層されてなり、前記下地層
が、少なくとも２以上の下地膜からなり、前記下地膜の
いずれか１つがＣｕ膜からなるとともに他のいずれか１
つがＮｉ-Ｆｅ合金膜またはＣｏ-Ｆｅ合金膜からなる先
のいずれかに記載の交換結合素子を備えたことを特徴と
する。特に前記下地層は、基体に隣接する第１下地膜
と、前記反強磁性層に隣接する第２下地膜との積層膜か
らなり、前記第１、第２下地膜のいずれか一方がＣｕか
らなるとともに他方がＮｉ-Ｆｅ合金またはＣｏ-Ｆｅ合
金からなることが好ましい。Next, the exchange coupling device of the present invention may be applied to a magnetic memory. That is, this magnetic memory comprises a base layer, a base layer, an antiferromagnetic layer, and a ferromagnetic layer exchange-coupled to the antiferromagnetic layer, which are sequentially stacked on a base, wherein the base layer has at least two or more layers. And any one of the underlayers is made of a Cu film and the other one is
One is provided with the exchange coupling element according to any one of the foregoing, which is made of a Ni—Fe alloy film or a Co—Fe alloy film. In particular, the underlayer is formed of a laminated film of a first underlayer adjacent to the base and a second underlayer adjacent to the antiferromagnetic layer, and one of the first and second underlayers is made of Cu. And the other is preferably made of a Ni—Fe alloy or a Co—Fe alloy.

【００２５】次に本発明の磁気ヘッドは、先のいずれか
に記載の交換結合素子を備えたことを特徴とする。即
ち、本発明の磁気ヘッドは、基体上に、下地層、反強磁
性体層、及び該反強磁性体層と交換結合する強磁性層が
順次積層されてなり、前記下地層が、少なくとも２以上
の下地膜からなり、前記下地膜のいずれか１つがＣｕ膜
からなるとともに他のいずれか１つがＮｉ-Ｆｅ合金膜
またはＣｏ-Ｆｅ合金膜からなる先のいずれかに記載の
交換結合素子を備えたことを特徴とする。特に前記下地
層は、基体に隣接する第１下地膜と、前記反強磁性層に
隣接する第２下地膜との積層膜からなり、前記第１、第
２下地膜のいずれか一方がＣｕからなるとともに他方が
Ｎｉ-Ｆｅ合金またはＣｏ-Ｆｅ合金からなることが好ま
しい。上記の磁気ヘッドの具体例として、上記の交換結
合素子の強磁性体上に非磁性高電導体層と別の強磁性体
層を積層してスピンバルブ型磁気抵抗素子を形成し、こ
のスピンバルブ型磁気抵抗素子を一対の絶縁膜で挟み、
更にこれらのスピンバルブ型磁気抵抗素子及び絶縁膜を
シールド層で挟んだものを例示できる。Next, a magnetic head according to the present invention includes the exchange coupling element described above. That is, the magnetic head according to the present invention comprises a base layer, a base layer, an antiferromagnetic layer, and a ferromagnetic layer exchange-coupled to the antiferromagnetic layer, which are sequentially laminated on a base. The exchange coupling device according to any one of the above, wherein the exchange coupling element is formed of the above base film, and one of the base films is formed of a Cu film and the other is formed of a Ni-Fe alloy film or a Co-Fe alloy film. It is characterized by having. In particular, the underlayer is formed of a laminated film of a first underlayer adjacent to the base and a second underlayer adjacent to the antiferromagnetic layer, and one of the first and second underlayers is made of Cu. And the other is preferably made of a Ni—Fe alloy or a Co—Fe alloy. As a specific example of the magnetic head, a non-magnetic high-conductivity layer and another ferromagnetic layer are laminated on the ferromagnetic material of the exchange-coupled device to form a spin-valve magnetoresistive element. Type magnetoresistive element is sandwiched between a pair of insulating films,
Further, a spin valve type magnetoresistive element and an insulating film sandwiched between shield layers can be exemplified.

【００２６】[0026]

【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。 （第１の実施形態）図１には、本発明の第１の実施形態
である交換結合素子１を示す。この交換結合素子１は、
基体２上に積層された下地層３と、下地層３上に形成さ
れた反強磁性体層４と、反強磁性体層４上に形成された
強磁性体層５と、保護層６とから構成されている。上記
基体２は例えば膜厚５ｎｍのＴａからなる層を少なくと
も表面に形成してなるものである。なお、基体２は、Ｔ
ａからなる層に代えてＴａ-Ｎｉ-Ｆｅ系合金からなる層
を表面に形成してなるものであってもよい。また反強磁
性体層４は例えば膜厚が５〜１０ｎｍのＭｎ-Ｉｒ合金
からなる層であり、強磁性体層５と交換結合して強磁性
体層５の磁化を一方向に固定する。なお、反強磁性体層
４はＭｎ-Ｉｒ合金に限られず、成膜されて（１１１）
面配向するものであれば、どのようなものであってもよ
い。Embodiments of the present invention will be described below with reference to the drawings. (First Embodiment) FIG. 1 shows an exchange coupling device 1 according to a first embodiment of the present invention. This exchange coupling element 1
A base layer 3 laminated on the base 2, an antiferromagnetic layer 4 formed on the base layer 3, a ferromagnetic layer 5 formed on the antiferromagnetic layer 4, and a protective layer 6. It is composed of The base 2 is formed, for example, by forming a layer made of Ta with a thickness of 5 nm on at least the surface. The base 2 is made of T
Instead of the layer made of a, a layer made of a Ta—Ni—Fe alloy may be formed on the surface. The antiferromagnetic layer 4 is a layer made of, for example, a Mn-Ir alloy having a thickness of 5 to 10 nm, and exchange-couples with the ferromagnetic layer 5 to fix the magnetization of the ferromagnetic layer 5 in one direction. Note that the antiferromagnetic layer 4 is not limited to the Mn-Ir alloy but may be formed as (111)
Any material may be used as long as it has a plane orientation.

【００２７】また強磁性体層５は例えば膜厚が１〜５ｎ
ｍのＮｉ-Ｆｅ合金またはＣｏ-Ｆｅ合金、あるいはＣ
ｏ、またはそれらの積層膜からなる層であり、反強磁性
体層４に隣接して反強磁性体層４と交換結合する。この
強磁性体層５も反強磁性体層４と同様に、成膜されて
（１１１）面配向するものであれば、Ｎｉ-Ｆｅ合金ま
たはＣｏ-Ｆｅ合金に限らずどのようなものでもよい。
また、それらの積層膜でも良い。更に保護層６は例えば
膜厚が０．５〜５ｎｍのＴａからなる層であり、強磁性
体層５の表面の酸化を防止する。ここで用いるＮｉ-Ｆ
ｅ合金の組成は、例えばＮｉ組成比で４０〜８５重量％
程度のものが好ましい。また、Ｃｏ-Ｆｅ合金の組成
は、例えばＣｏ組成比で４０〜１００重量％程度のもの
が好ましい。また、Ｎｉ-Ｆｅ合金、Ｃｏ-Ｆｅ合金のい
ずれも、他の添加元素が添加されていても良い。The ferromagnetic layer 5 has a thickness of, for example, 1 to 5 n.
m Ni-Fe alloy or Co-Fe alloy, or C
o, or a layer composed of a laminated film thereof, and is exchange-coupled to the antiferromagnetic layer 4 adjacent to the antiferromagnetic layer 4. The ferromagnetic layer 5 is not limited to the Ni—Fe alloy or the Co—Fe alloy as long as it is formed and oriented in the (111) plane, similarly to the antiferromagnetic layer 4. .
Further, a stacked film of them may be used. Further, the protective layer 6 is a layer made of Ta having a thickness of, for example, 0.5 to 5 nm, and prevents oxidation of the surface of the ferromagnetic layer 5. Ni-F used here
The composition of the e alloy is, for example, 40 to 85% by weight in terms of a Ni composition ratio.
Are preferred. The composition of the Co—Fe alloy is preferably, for example, about 40 to 100% by weight in terms of Co composition ratio. In addition, other additive elements may be added to both the Ni—Fe alloy and the Co—Fe alloy.

【００２８】下地層３は、２以上の下地膜の積層構造で
あることが好ましい。各下地膜のうち、いずれか１つが
Ｃｕ膜からなるとともに他の１つがＮｉ-Ｆｅ合金膜ま
たはＣｏ-Ｆｅ合金膜からなることが好ましい。この場
合、下地層の全層厚は１ｎｍ以上５ｎｍ以下の範囲が好
ましく、また各下地膜の各膜厚はそれぞれ、０．５ｎｍ
以上１．５ｎｍ以下であることが好ましい。下地層３の
全層厚が１ｎｍ以上であれば、下地層３の（１１１）配
向した結晶性を維持することが可能になり、また層厚が
５ｎｍ以下であれば、交換結合素子１を磁気抵抗効果素
子用いた場合に、検出電流を流した際に電流の分流が抑
制されてシャントロスを低減することが可能になる。更
に、各下地膜の各膜厚が０．５ｎｍ以上であれば、各下
地膜の結晶性を維持することが可能になり、また各膜厚
が１．５ｎｍ以下であれば上記と同様に検出電流のシャ
ントロスを低減することが可能になる。The underlayer 3 preferably has a laminated structure of two or more underlayers. It is preferable that one of the base films is formed of a Cu film and the other is formed of a Ni—Fe alloy film or a Co—Fe alloy film. In this case, the total thickness of the underlayer is preferably in the range of 1 nm to 5 nm, and the thickness of each underlayer is 0.5 nm.
The thickness is preferably 1.5 nm or more and 1.5 nm or less. If the total thickness of the underlayer 3 is 1 nm or more, the (111) -oriented crystallinity of the underlayer 3 can be maintained. If the thickness of the underlayer 3 is 5 nm or less, the exchange coupling element 1 can be made magnetic. When the resistance effect element is used, the shunt of the current when the detection current flows is suppressed, and the shunt loss can be reduced. Furthermore, if each film thickness of each underlying film is 0.5 nm or more, it is possible to maintain the crystallinity of each underlying film, and if each film thickness is 1.5 nm or less, detection is performed in the same manner as described above. It becomes possible to reduce the current shunt loss.

【００２９】特に図１に示すように、下地層３は、基体
２に隣接する第１下地膜３ａと、反強磁性体層４に隣接
する第２下地膜３ｂとからなる積層膜であることがより
好ましい。図１に示す第１、第２下地膜３ａ、３ｂは、
いずれか一方がＣｕ膜からなるとともに他方がＮｉ-Ｆ
ｅ合金膜またはＣｏ-Ｆｅ合金膜からなる。即ち、第１
下地膜３ａをＣｕ膜とした場合は、第２下地膜３ｂがＮ
ｉ-Ｆｅ合金膜またはＣｏ-Ｆｅ合金膜とする。また、第
１下地膜３ａをＮｉ-Ｆｅ合金膜またはＣｏ-Ｆｅ合金膜
とした場合は、第２下地膜３ｂがＣｕ膜とする。なお、
下地層３構成するＮｉ-Ｆｅ合金、Ｃｏ-Ｆｅ合金の組成
は、強磁性体層５の場合と同様である。In particular, as shown in FIG. 1, the underlayer 3 is a laminated film composed of a first underlayer 3a adjacent to the base 2 and a second underlayer 3b adjacent to the antiferromagnetic layer 4. Is more preferred. The first and second base films 3a and 3b shown in FIG.
One is made of Cu film and the other is Ni-F
It is made of an e-alloy film or a Co-Fe alloy film. That is, the first
When the underlying film 3a is a Cu film, the second underlying film 3b is made of N
An i-Fe alloy film or a Co-Fe alloy film is used. When the first base film 3a is a Ni—Fe alloy film or a Co—Fe alloy film, the second base film 3b is a Cu film. In addition,
The composition of the Ni—Fe alloy and the Co—Fe alloy constituting the underlayer 3 is the same as that of the ferromagnetic layer 5.

【００３０】下地層３を構成するＣｕ、Ｎｉ-Ｆｅ合
金、Ｃｏ-Ｆｅ合金はいずれもｆｃｃ結晶構造(面心立方
構造)を有する材料であり、これらの材料はスパッタリ
ング等によって（１１１）面を優先配向しつつ成膜され
るため、膜表面での（１１１）面の露出確率が高くな
る。従って、この下地層３上に反強磁性体層４及び強磁
性体層５をエピタキシャル成長させつつ成膜すると、反
強磁性体層４及び強磁性体層５が（１１１）面配向され
た状態で形成され、この結果、反強磁性体層４と強磁性
体層５との界面で誘導される一方向異方性定数Ｊｋが高
くなり、交換結合磁界Ｈexが増大する。The Cu, Ni—Fe alloy, and Co—Fe alloy constituting the underlayer 3 are all materials having an fcc crystal structure (face-centered cubic structure), and these materials have a (111) plane by sputtering or the like. Since the film is formed while being preferentially oriented, the probability of exposing the (111) plane on the film surface increases. Therefore, when the antiferromagnetic layer 4 and the ferromagnetic layer 5 are formed on the underlayer 3 while epitaxially growing, the antiferromagnetic layer 4 and the ferromagnetic layer 5 are oriented in the (111) plane. As a result, the one-way anisotropy constant Jk induced at the interface between the antiferromagnetic layer 4 and the ferromagnetic layer 5 increases, and the exchange coupling magnetic field Hex increases.

【００３１】図１に示す２層構造の下地層３の全膜厚は
１ｎｍ以上３ｎｍ以下の範囲が好ましく、また第１、第
２下地膜３ａ、３ｂの各膜厚はそれぞれ、０．５ｎｍ以
上１．５ｎｍ以下であることが好ましい。２層構造の下
地層３の全層厚が１ｎｍ以上であれば、下地層３の（１
１１）配向した結晶性を維持することが可能になり、ま
た全層厚が３ｎｍ以下にすれば、交換結合素子１を磁気
抵抗効果素子に用いた場合、検出電流を流した際に電流
の分流が抑制されてシャントロスを低減することが可能
になる。更に、第１、第２下地膜３ａ、３ｂの各膜厚が
０．５ｎｍ以上であれば、各下地膜３ａ、３ｂの結晶性
を維持することが可能になり、また各膜厚が１．５ｎｍ
以下にすれば上記と同様に検出電流のシャントロスを低
減することが可能になる。The total thickness of the underlayer 3 having the two-layer structure shown in FIG. 1 is preferably in the range of 1 nm to 3 nm, and each of the first and second underlayers 3a and 3b has a thickness of 0.5 nm or more. It is preferably 1.5 nm or less. If the total thickness of the underlayer 3 having the two-layer structure is 1 nm or more, (1
11) If it is possible to maintain the oriented crystallinity and if the total layer thickness is 3 nm or less, when the exchange coupling element 1 is used as a magnetoresistive element, the current shunts when a detection current flows. And shunt loss can be reduced. Further, when the thickness of each of the first and second base films 3a and 3b is 0.5 nm or more, the crystallinity of each of the base films 3a and 3b can be maintained. 5 nm
In the following manner, the shunt loss of the detection current can be reduced in the same manner as described above.

【００３２】次に、上記の交換結合素子１の製造方法を
説明する。なお、ここでは第１下地膜３ａとしてＣｕ
膜、第２下地膜としてＮｉ-Ｆｅ合金膜をそれぞれ用い
た２層からなる下地層を採用した場合の交換結合素子１
の製造方法について説明する。Next, a method of manufacturing the above exchange coupling element 1 will be described. Here, Cu is used as the first underlayer 3a.
Exchange coupling element 1 in the case of adopting a two-layer underlayer using a Ni—Fe alloy film as a film and a second underlayer, respectively.
A method of manufacturing the device will be described.

【００３３】図２には、上記の交換結合素子１を製造す
る際に使用する成膜装置を上方からみた模式図を示す。
図２に示す成膜装置は、第１、第２ロード室１０１、１
０２と、前処理室１０３と、搬送室１０４と、第１成膜
室１０５、第２成膜室１０６、第３、第４成膜室１０７
及び第５成膜室１０８とを主体として構成されている。
また、この成膜装置には基体の移動手段１１０、１１１
が備えられている。また、第２ロード室１０２、前処理
室１０３、搬送室１０４及び各成膜室１０５〜１０８に
は、各室内を減圧する排気手段１０２ａ、１０３ａ、１
０４ａ、１０４ａ’、１０５ａ、１０６ａ、１０７ａ、
１０７ａ’、１０８ａが備えられている。尚、搬送室１
０４の排気手段１０４ａ、１０４ａ’は、搬送室１０４
の下方（図中、紙面より奥方）に配置されている。ま
た、搬送室１０４と前処理室１０３並びに各成膜室１０
５ａ〜１０８ａの間には、ゲートバルブ１０３ｂ、１０
５ｂ〜１０８ｂが設けられている。更に第２ロード室１
０２と前処理室１０３の間にもゲートバルブ１０２ｂが
設けられている。表１には、上記の交換結合素子１を製
造する際の成膜条件を示す。尚、表１及び以後の明細書
において、圧力をＴｏｒｒの単位で表記するが、これを
ＳＩ単位であるＰａ(パスカル)に変換する場合には、１
Ｔｏｒｒ＝１３３Ｐａにより換算すればよい。FIG. 2 is a schematic view of a film forming apparatus used for manufacturing the exchange coupling element 1 as viewed from above.
The film forming apparatus shown in FIG.
02, the pretreatment chamber 103, the transfer chamber 104, the first film formation chamber 105, the second film formation chamber 106, the third and fourth film formation chambers 107.
And the fifth film forming chamber 108.
In addition, the substrate moving means 110, 111
Is provided. Further, the second load chamber 102, the pretreatment chamber 103, the transfer chamber 104, and each of the film formation chambers 105 to 108 are provided with exhaust means 102a, 103a,
04a, 104a ', 105a, 106a, 107a,
107a 'and 108a are provided. The transfer chamber 1
04 exhaust means 104a, 104a '
(In the drawing, farther from the paper). Further, the transfer chamber 104, the pretreatment chamber 103, and the film forming chambers 10
The gate valves 103b, 10b are provided between 5a and 108a.
5b to 108b are provided. Second load room 1
A gate valve 102b is also provided between the pretreatment chamber 103 and the pretreatment chamber 103. Table 1 shows the film forming conditions when manufacturing the exchange coupling element 1 described above. In Table 1 and the following description, the pressure is expressed in units of Torr. When converting the pressure into Pa (Pascal) which is an SI unit, 1 is used.
What is necessary is just to convert by Torr = 133Pa.

【００３４】[0034]

【表１】 [Table 1]

【００３５】以下に、上記の交換結合素子１の製造方法
について、手順を追って説明する。括弧付き番号はその
手順を示す。 （Ａ１）少なくとも表面にＴａ層またはＴａ-Ｎｉ-Ｆｅ
系合金層が露出した基体２を図２に示す成膜装置の第１
ロード室１０１に導入後、第１ロード室１０１の内部空
間を大気圧から１０-7Ｔｏｒｒ台の所定の圧力まで排気
手段（図示せず）により減圧する。 （Ａ２）第１ロード室１０１の内部に配置された基体２
を、排気手段１０２ａにより予め１０-8〜１０-9Ｔｏｒ
ｒ台の所定の圧力まで減圧してある第２ロード室１０２
に、搬送手段１１０を用いて第１ロード室１０１から移
動させる。Hereinafter, a method of manufacturing the exchange coupling element 1 will be described step by step. The number in parentheses indicates the procedure. (A1) At least a Ta layer or Ta-Ni-Fe
The substrate 2 having the exposed base alloy layer was exposed to the first film forming apparatus shown in FIG.
After being introduced into the load chamber 101, the internal space of the first load chamber 101 is evacuated from atmospheric pressure to a predetermined pressure on the order of 10 -7 Torr by an exhaust means (not shown). (A2) Base 2 disposed inside first load chamber 101
And 10 −10 to 10 −9 Torr in advance by the exhaust means 102a.
The second load chamber 102 which has been depressurized to a predetermined pressure of r units
Then, it is moved from the first load chamber 101 by using the transport means 110.

【００３６】（Ａ３）第２ロード室１０２の内部に配置
された基体２を、排気手段１０３ａにより予め背圧ＰＢ
を１０-10〜１０-11Ｔｏｒｒ台の一定圧力に内部空間を
維持した前処理室１０３に、搬送手段１１１を用いて移
動する。その後、超高純度Ａｒガスを用い所定の条件で
発生させたプラズマにより、基体２表面をドライクリー
ニングしてもよい。(A3) The base 2 disposed inside the second load chamber 102 is previously subjected to the back pressure PB by the exhaust means 103a.
Is moved to the pretreatment chamber 103, which maintains the internal space at a constant pressure of the order of 10 −10 to 10 −11 Torr, using the transfer means 111. Thereafter, the surface of the substrate 2 may be dry-cleaned by plasma generated under predetermined conditions using an ultra-high purity Ar gas.

【００３７】（Ａ４）前処理室１０３から各成膜室１０
５〜１０８への基体２の移動は、搬送室１０４に内蔵さ
れた搬送手段（図示せず）にて行う。各成膜室１０５〜
１０８は予め１０-11Ｔｏｒｒ台の一定圧力ＰＢに内部
空間の背圧を維持している。また、搬送室１０４も各成
膜室１０５〜１０８と同じ背圧である。(A4) From the pretreatment chamber 103 to each of the deposition chambers 10
The movement of the substrate 2 from 5 to 108 is performed by a transfer means (not shown) built in the transfer chamber 104. Each deposition chamber 105-
Reference numeral 108 preliminarily maintains the back pressure of the internal space at a constant pressure PB of the order of 10 -11 Torr. The transfer chamber 104 also has the same back pressure as the film forming chambers 105 to 108.

【００３８】（Ａ５）基体２上に第１下地膜３ａとして
Ｃｕ膜を形成する。その手順を次の（Ａ５．１）〜（Ａ
５．３）に示す。 （Ａ５．１）搬送室１０４に内蔵された搬送手段により
前処理室１０３から基体２を取り出し、第１成膜室１０
５に移動させる。その後、基体２を設置した状態で第１
成膜室１０５の真空度を所望の一定圧力ＰＢに維持す
る。 （Ａ５．２）次に、成膜条件のプロセスガス圧力（表
１）になるまで超高純度のＡｒガスを第１成膜室１０５
に導入する。 （Ａ５．３）カソードに所定の電力を印加してＣｕター
ゲットのスパッタリングを行い、基体２上に厚さ１ｎｍ
の第１下地膜（Ｃｕ膜）３ａを形成する。(A5) A Cu film is formed on the base 2 as the first base film 3a. The procedure is described in the following (A5.1) to (A
It is shown in 5.3). (A5.1) The base 2 is taken out of the pretreatment chamber 103 by the transfer means built in the transfer chamber 104, and
Move to 5. Thereafter, with the base 2 installed, the first
The degree of vacuum in the film forming chamber 105 is maintained at a desired constant pressure PB. (A5.2) Next, an ultra-high purity Ar gas is supplied to the first film forming chamber 105 until the process gas pressure under the film forming conditions (Table 1) is reached.
To be introduced. (A5.3) A predetermined power is applied to the cathode to perform sputtering of a Cu target, and a thickness of 1 nm is formed on the base 2.
Of the first underlayer (Cu film) 3a is formed.

【００３９】（Ａ６）次に、基体２の表面をなす第１下
地膜３ａ上に、第２下地膜３ｂとしてＮｉ-Ｆｅ合金膜
（１ｎｍ）を形成する。その手順を（Ａ６．１）〜（Ａ
６．３）に示す。 （Ａ６．１）第１下地膜（Ｃｕ膜）３ａを形成後、第１
成膜室１０５から基体２を取り出し、第３成膜室１０７
に移動させる。その後、基体２を設置した状態で第３成
膜室１０７の真空度を所望の一定圧力ＰＢに維持する。 （Ａ６．２）次に、成膜条件のプロセスガス圧力（表
１）になるまで超高純度のＡｒガスを第３成膜室１０７
に導入する。 （Ａ６．３）カソードに所定の電力を印加してＮｉ-Ｆ
ｅ合金ターゲットのスパッタリングを行い、第１下地膜
３ａ（Ｃｕ膜）上に厚さ１ｎｍの第２下地膜（Ｎｉ-Ｆ
ｅ合金膜）３ｂを形成する。(A6) Next, a Ni—Fe alloy film (1 nm) is formed as a second base film 3b on the first base film 3a forming the surface of the base 2. The procedure is described in (A6.1) to (A
See 6.3). (A6.1) After forming the first underlayer (Cu film) 3a, the first
The substrate 2 is taken out of the film formation chamber 105 and is taken out of the third film formation chamber 107.
Move to Thereafter, the degree of vacuum in the third film forming chamber 107 is maintained at a desired constant pressure PB with the substrate 2 installed. (A6.2) Next, ultra-high-purity Ar gas is supplied to the third film forming chamber 107 until the process gas pressure under the film forming conditions (Table 1) is reached.
To be introduced. (A6.3) Ni-F is applied by applying a predetermined power to the cathode.
An e-alloy target is sputtered to form a second underlayer (Ni-F) having a thickness of 1 nm on the first underlayer 3a (Cu film).
e alloy film) 3b is formed.

【００４０】（Ａ７）次に、第２下地膜３ｂ上に、反強
磁性体層４としてＭｎ-Ｉｒ合金層（７ｎｍ）を形成す
る。その手順を（Ａ７．１）〜（Ａ７．３）に示す。 （Ａ７．１）第２下地膜（Ｎｉ-Ｆｅ合金膜）３ｂを形
成後、第３成膜室１０７から基体２を取り出し、第２成
膜室１０６に移動させる。その後、基体２を設置した状
態で第２成膜室１０６の真空度を所望の一定圧力ＰＢに
維持する。 （Ａ７．２）次に、成膜条件のプロセスガス圧力（表
１）になるまで超高純度のＡｒガスを第２成膜室１０６
に導入する。 （Ａ７．３）カソードに所定の電力を印加してＭｎ-Ｉ
ｒ合金ターゲットのスパッタリングを行い、第２下地膜
３ｂ（Ｎｉ-Ｆｅ合金膜）上に厚さ７ｎｍの反強磁性体
層（Ｍｎ-Ｉｒ合金膜）４を形成する。(A7) Next, a Mn-Ir alloy layer (7 nm) is formed as the antiferromagnetic layer 4 on the second underlayer 3b. The procedure is shown in (A7.1) to (A7.3). (A7.1) After forming the second base film (Ni—Fe alloy film) 3b, the substrate 2 is taken out of the third film forming chamber 107 and moved to the second film forming chamber. Thereafter, the degree of vacuum in the second film forming chamber 106 is maintained at a desired constant pressure PB with the substrate 2 installed. (A7.2) Next, an ultra-high-purity Ar gas is supplied to the second film forming chamber 106 until the process gas pressure under the film forming conditions (Table 1) is reached.
To be introduced. (A7.3) A predetermined power is applied to the cathode to apply Mn-I
An r-alloy target is sputtered to form an antiferromagnetic layer (Mn-Ir alloy film) 4 having a thickness of 7 nm on the second underlayer 3b (Ni-Fe alloy film).

【００４１】（Ａ８）次に、反強磁性体層４上に、強磁
性体層５としてＮｉ-Ｆｅ合金層（２ｎｍ）を形成す
る。その際の手順は、第２成膜室１０６から第３成膜室
１０７へ基体２を移動させること以外は上記（Ａ６）と
同様に行う。(A8) Next, a Ni—Fe alloy layer (2 nm) is formed on the antiferromagnetic layer 4 as the ferromagnetic layer 5. The procedure at that time is the same as the above (A6) except that the base 2 is moved from the second film formation chamber 106 to the third film formation chamber 107.

【００４２】（Ａ９）次に、強磁性体層５上に、保護層
６としてＴａ層（２ｎｍ）を形成する。その手順を（Ａ
９．１）〜（Ａ９．４）に示す。 （Ａ９．１）強磁性体層（Ｎｉ-Ｆｅ合金膜）５を形成
後、第３成膜室１０７から基体２を取り出し、第５成膜
室１０８に移動する。その後、基体２を設置した状態で
第５成膜室１０８の真空度を所望の一定圧力ＰＢに維持
する。 （Ａ９．２）次に、成膜条件のプロセスガス圧力（表
１）になるまで超高純度のＡｒガスを第５成膜室１０８
に導入する。 （Ａ９．３）カソードに所定の電力を印加してＴａター
ゲットのスパッタリングを行い、強磁性体層５（Ｎｉ-
Ｆｅ合金膜）上に厚さ２ｎｍの保護層（Ｔａ層）６を形
成する。(A9) Next, a Ta layer (2 nm) is formed as a protective layer 6 on the ferromagnetic layer 5. The procedure is (A
9.1) to (A9.4). (A9.1) After forming the ferromagnetic layer (Ni—Fe alloy film) 5, the substrate 2 is taken out of the third film forming chamber 107 and moved to the fifth film forming chamber. Thereafter, the degree of vacuum in the fifth film forming chamber 108 is maintained at a desired constant pressure PB while the base 2 is installed. (A9.2) Next, an ultra-high-purity Ar gas is supplied to the fifth film forming chamber 108 until the process gas pressure under the film forming conditions (Table 1) is reached.
To be introduced. (A9.3) A predetermined power is applied to the cathode to perform sputtering of the Ta target, and the ferromagnetic layer 5 (Ni-
A protective layer (Ta layer) 6 having a thickness of 2 nm is formed on the (Fe alloy film).

【００４３】（Ａ１０）最後に、保護層６の形成を終え
た基体２を、第５成膜室１０８、前処理室１０３、第２
ロード室１０２、第１ロード室１０１の順に移動させる
ことにより、上記Ａ１〜Ａ９の工程を経て製造した交換
結合素子１を取り出す。(A10) Finally, the base 2 on which the formation of the protective layer 6 has been completed is removed from the fifth film forming chamber 108, the pretreatment chamber 103, and the second
By moving the load chamber 102 and the first load chamber 101 in this order, the exchange coupling element 1 manufactured through the steps A1 to A9 is taken out.

【００４４】上記の製造方法では、第２下地膜３ｂ及び
強磁性体層５をＮｉ-Ｆｅ合金膜で形成した例について
説明したが、第２下地膜３ｂまたは強磁性体層５のいず
れか一方をＣｏ-Ｆｅ合金膜とし、他方をＮｉ-Ｆｅ合金
膜としても良い。また、第２下地膜３ｂ及び強磁性体層
５の両方をＣｏ-Ｆｅ合金膜としても良い。この場合、
第３、第４成膜室１０７内にＮｉ-Ｆｅ合金ターゲット
とＣｏ-Ｆｅ合金ターゲットを設置し、上記の手順の一
部を変更すればよい。更に、第１下地膜３ａをＮｉ-Ｆ
ｅ合金膜またはＣｏ-Ｆｅ合金膜とし、第２下地膜３ｂ
をＣｕ膜としても良い。In the above-described manufacturing method, an example was described in which the second underlayer 3b and the ferromagnetic layer 5 were formed of a Ni—Fe alloy film, but one of the second underlayer 3b and the ferromagnetic layer 5 was formed. May be a Co—Fe alloy film, and the other may be a Ni—Fe alloy film. Further, both the second underlayer 3b and the ferromagnetic layer 5 may be Co-Fe alloy films. in this case,
A Ni-Fe alloy target and a Co-Fe alloy target may be installed in the third and fourth film forming chambers 107, and a part of the above procedure may be changed. Further, the first underlayer 3a is made of Ni-F
e alloy film or Co-Fe alloy film, and the second underlayer 3b
May be a Cu film.

【００４５】上記の交換結合素子１においては、下地層
３を構成する第１下地膜３ａがＣｕ膜であり、このＣｕ
膜は反強磁性体層４を（１１１）面配向させる能力に優
れているので、Ｃｕ膜を含む下地層３上に反強磁性体層
４を積層することにより反強磁性体層４が（１１１）面
配向し、これにより反強磁性体層４と固定磁性体層５と
の交換結合磁界Ｈex及び一方向異方性定数Ｊｋを大きく
できる。In the exchange coupling device 1, the first underlayer 3a constituting the underlayer 3 is a Cu film.
Since the film has an excellent ability to orient the antiferromagnetic layer 4 in the (111) plane, the antiferromagnetic layer 4 is formed by stacking the antiferromagnetic layer 4 on the underlayer 3 including the Cu film. (111) plane orientation, whereby the exchange coupling magnetic field Hex and the one-way anisotropy constant Jk between the antiferromagnetic layer 4 and the pinned magnetic layer 5 can be increased.

【００４６】また、Ｃｕ膜が反強磁性体層４を（１１
１）面配向させる能力に優れるので、Ｃｕ膜が１．５ｎ
ｍ以下であっても反強磁性体層４を（１１１）面配向さ
せることができるので、交換結合素子１を磁気抵抗効果
素子に用いた場合、流れる検出電流の分流を低減してシ
ャントロスを少なくすることができ、磁気抵抗効果を向
上できる。The Cu film changes the antiferromagnetic layer 4 to (11
1) Since the ability to orient the plane is excellent, the Cu film has a thickness of 1.5n.
m or less, the antiferromagnetic layer 4 can be oriented in the (111) plane. Therefore, when the exchange coupling element 1 is used as a magnetoresistive element, the shunt of the detection current flowing is reduced and the shunt loss is reduced. It can be reduced and the magnetoresistance effect can be improved.

【００４７】また、下地層３がＣｕ膜とＮｉ-Ｆｅ合金
膜との積層構造であるため、同じ厚さの下地層を単層構
造で形成した場合と比較して、下地層３を構成する各下
地膜３ａ、３ｂの膜厚が単層構造の下地層より当然に薄
くなる。従って、第１、第２下地膜３ａ、３ｂの成膜時
に、結晶粒の粒成長が抑制される。この様子を図３に示
す。Since the underlayer 3 has a laminated structure of a Cu film and a Ni—Fe alloy film, the underlayer 3 is formed as compared with the case where the underlayer having the same thickness is formed in a single layer structure. The thickness of each of the base films 3a and 3b is naturally smaller than that of the base layer having a single-layer structure. Therefore, during the formation of the first and second base films 3a and 3b, the growth of crystal grains is suppressed. This is shown in FIG.

【００４８】図３には交換結合素子１の断面模式図を示
している。図３に示すように、第１、第２下地膜３ａ、
３ｂの結晶粒の粒成長が抑制された結果、下地層３の表
面が平坦になって下地層３の（１１１）面と反強磁性体
層４の（１１１）面との接触確率が高くなる。また、強
磁性体層５は、反強磁性体層４と同様に下地層３上にエ
ピタキシャル成長して形成されるため、強磁性体層５と
反強磁性体層４との界面も平坦になり、反強磁性体層４
及び強磁性体層５間の（１１１）面を介しての接触確率
が高くなる。これにより、単層構造の下地層を用いた場
合よりも交換結合磁界Ｈex及び一方向異方性定数Ｊｋを
向上できる。FIG. 3 is a schematic sectional view of the exchange coupling element 1. As shown in FIG. 3, the first and second underlayers 3a,
As a result of suppressing the crystal growth of the crystal grains 3b, the surface of the underlayer 3 becomes flat, and the contact probability between the (111) plane of the underlayer 3 and the (111) plane of the antiferromagnetic layer 4 increases. . Further, since the ferromagnetic layer 5 is formed by epitaxial growth on the underlayer 3 similarly to the antiferromagnetic layer 4, the interface between the ferromagnetic layer 5 and the antiferromagnetic layer 4 becomes flat. , Antiferromagnetic layer 4
Also, the probability of contact between the ferromagnetic layer 5 and the (111) plane increases. Thereby, the exchange coupling magnetic field Hex and the one-way anisotropy constant Jk can be improved as compared with the case where the underlayer having the single-layer structure is used.

【００４９】尚、図４には、下地層を単層構造とした交
換結合素子の断面模式図を示している。図４に示すよう
に、図４に示す交換結合素子では、下地層を厚く形成す
るために下地層における結晶粒の粒成長が促進されて、
下地層３の表面が凹凸状になり、下地層の（１１１）面
と反強磁性体層の（１１１）面との接触確率が低くな
る。これにより、反強磁性体層及び強磁性体層間の（１
１１）面を介しての接触確率が低くなって、積層構造の
下地層を用いた場合よりも交換結合磁界Ｈex及び一方向
異方性定数Ｊｋが低下することになる。FIG. 4 is a schematic cross-sectional view of an exchange coupling device having a single-layer underlayer. As shown in FIG. 4, in the exchange-coupled device shown in FIG. 4, since the underlayer is formed thick, the growth of crystal grains in the underlayer is promoted.
The surface of the underlayer 3 becomes uneven, and the probability of contact between the (111) plane of the underlayer and the (111) plane of the antiferromagnetic layer is reduced. Thereby, (1) between the antiferromagnetic layer and the ferromagnetic layer
11) The probability of contact through the surface is reduced, and the exchange coupling magnetic field Hex and the one-way anisotropy constant Jk are reduced as compared with the case where the underlying layer having the laminated structure is used.

【００５０】（第２の実施形態）図５には、本発明の第
２の実施形態であるスピンバルブ型磁気抵抗素子１０を
示す。このスピンバルブ型磁気抵抗素子１０は、基体１
２上に積層された本発明に係る交換結合素子１１と、交
換結合素子１１上に形成された非磁性高導電体層１６
と、非磁性高導電体層１６上に形成された別の強磁性体
層１７と、保護層１８とから構成されている。(Second Embodiment) FIG. 5 shows a spin-valve magnetoresistive element 10 according to a second embodiment of the present invention. The spin-valve magnetoresistive element 10 comprises a substrate 1
2. The exchange coupling element 11 according to the present invention laminated on the second coupling element 2 and the non-magnetic high conductor layer 16 formed on the exchange coupling element 11
And another ferromagnetic layer 17 formed on the nonmagnetic high-conductivity layer 16, and a protective layer 18.

【００５１】交換結合素子１１は、第１の実施形態にて
説明した交換結合素子１と同様のものであり、基体１２
上に積層された下地層１３と、下地層１３上に形成され
た反強磁性体層１４と、反強磁性体層１４上に形成され
た強磁性体層１５とから構成されている。また下地層１
３は、基体１２に隣接する第１下地膜１３ａと、反強磁
性体層１４に隣接する第２下地膜１３ｂとからなる積層
膜である。上記の交換結合素子１１、基体１２、下地層
１３（第１下地膜１３ａ、第２下地膜１３ｂ）、反強磁
性体層１４及び強磁性体層１５は、第１の実施形態にて
説明した交換結合素子１、基体２、下地層３（第１下地
膜３ａ、第２下地膜３ｂ）、反強磁性体層４及び強磁性
体層５の構成、材質、膜厚等と同様であるので、その説
明を省略する。The exchange coupling element 11 is similar to the exchange coupling element 1 described in the first embodiment.
It comprises a base layer 13 laminated thereon, an antiferromagnetic layer 14 formed on the base layer 13, and a ferromagnetic layer 15 formed on the antiferromagnetic layer 14. The underlayer 1
Reference numeral 3 denotes a laminated film including a first underlayer 13a adjacent to the base 12 and a second underlayer 13b adjacent to the antiferromagnetic layer 14. The exchange coupling element 11, the base 12, the underlayer 13 (the first underlayer 13a, the second underlayer 13b), the antiferromagnetic layer 14, and the ferromagnetic layer 15 are described in the first embodiment. The configuration, material, thickness, etc. of the exchange coupling element 1, the base 2, the underlayer 3 (the first underlayer 3a, the second underlayer 3b), the antiferromagnetic layer 4, and the ferromagnetic layer 5 are the same. , The description of which is omitted.

【００５２】強磁性体層１５は、例えば厚さ２ｎｍのCo
~Fe、 Ni~FeあるいはCo、またはそれらの膜をそれぞれ
適当な厚みで積層した膜からなるが、その他に、適当な
厚みのRuを介して２つの強磁性体膜を対向させ、両膜の
磁化を反強磁性的に交換結合させた、いわゆる積層フェ
リあるいは積層反強磁性膜構造としてもよい。非磁性高
導電体層１６は例えば膜厚が２〜２．５ｎｍのＣｕから
なる層であり、強磁性体層１５、１７の間に位置して両
強磁性層１５，１７の磁化方向に依存した電子のスピン
依存伝導を生じさせるとともに、これらの層１５、１６
の磁気的な結合を防止する。また強磁性体層１７は例え
ば膜厚が１〜５ｎｍのＮｉ-Ｆｅ合金またはＣｏ-Ｆｅ合
金またはＣｏまたはそれらの積層膜からなる層であり、
非磁性高導電体層１６に隣接している。上記の積層構造
では、強磁性体層１５が磁化固定層を構成し、別の強磁
性体層１７が磁化自由層を構成する。また保護膜１８
は、例えば膜厚が２ｎｍのTaからなる膜である。強磁性
膜１７とTa保護膜との界面反応を嫌う場合は、両膜間に
厚さ１nm程度のCu膜を挿入しても良い。The ferromagnetic layer 15 is made of, for example, a 2 nm-thick Co
~ Fe, Ni ~ Fe or Co, or a film obtained by laminating these films at appropriate thicknesses. In addition, two ferromagnetic films are opposed to each other via Ru of an appropriate thickness, A so-called laminated ferrimagnetic or laminated antiferromagnetic film structure in which magnetization is exchange-coupled antiferromagnetically may be used. The nonmagnetic high-conductivity layer 16 is a layer made of Cu having a thickness of, for example, 2 to 2.5 nm, and is located between the ferromagnetic layers 15 and 17 and depends on the magnetization directions of the ferromagnetic layers 15 and 17. In addition to causing spin-dependent conduction of the electrons, these layers 15, 16
To prevent magnetic coupling. The ferromagnetic layer 17 is, for example, a layer made of a Ni—Fe alloy, a Co—Fe alloy, Co, or a stacked film of them having a thickness of 1 to 5 nm.
It is adjacent to the nonmagnetic high-conductivity layer 16. In the above laminated structure, the ferromagnetic layer 15 constitutes a fixed magnetization layer, and another ferromagnetic layer 17 constitutes a magnetization free layer. Also, the protective film 18
Is a film made of Ta having a thickness of 2 nm, for example. If the interface reaction between the ferromagnetic film 17 and the Ta protective film is disliked, a Cu film having a thickness of about 1 nm may be inserted between the two films.

【００５３】次に、図２に示す成膜装置を用いたスピン
バルブ型磁気抵抗素子１０の製造方法を説明する。この
スピンバルブ型磁気抵抗素子１０の製造方法は、製造条
件の一部を表２に示す条件としたこと以外は先に説明し
た交換結合素子１の製造方法とほぼ同じである。表２に
は、上記のスピンバルブ型磁気抵抗素子１０を製造する
際の成膜条件を示す。Next, a method of manufacturing the spin-valve magnetoresistive element 10 using the film forming apparatus shown in FIG. 2 will be described. The method of manufacturing the spin-valve magnetoresistive element 10 is substantially the same as the method of manufacturing the exchange coupling element 1 described above, except that some of the manufacturing conditions are set as shown in Table 2. Table 2 shows film forming conditions for manufacturing the spin valve type magnetoresistive element 10 described above.

【００５４】[0054]

【表２】 [Table 2]

【００５５】以下に、上記のスピンバルブ型磁気抵抗素
子１０の製造方法について、手順を追って説明する。括
弧付き番号はその手順を示す。 （Ｂ１）表面にＴａ層またはＴａ-Ｎｉ-Ｆｅ系合金層が
露出した基体１２を図２に示す成膜装置の第１ロード室
１０１に導入後、第２ロード室１０２を経て前処理室１
０３に移動させる。 （Ｂ２）基体１２上に第１下地膜１３ａとしてＣｕ膜を
形成する。その手順は、先に説明した手順（Ａ５．１）
〜（Ａ５．３）とほぼ同様である。Hereinafter, a method of manufacturing the above-described spin-valve magnetoresistive element 10 will be described step by step. The number in parentheses indicates the procedure. (B1) After the substrate 12 having the Ta layer or the Ta—Ni—Fe alloy layer exposed on the surface is introduced into the first load chamber 101 of the film forming apparatus shown in FIG.
Move to 03. (B2) A Cu film is formed on the base 12 as the first base film 13a. The procedure is the same as the procedure described above (A5.1)
To (A5.3).

【００５６】（Ｂ３）次に、基体１２の表面をなす第１
下地膜１３ａ上に、第２下地膜１３ｂとしてＣｏ-Ｆｅ
合金膜（１ｎｍ）を形成する。その手順は、先に説明し
た手順（Ａ６．１）〜（Ａ６．３）とほぼ同様である。 （Ｂ４）次に、第２下地膜１３ｂ上に、反強磁性体層１
４としてＭｎ-Ｉｒ合金層（６．８ｎｍ）を形成する。
その手順は、先に説明した手順（Ａ７．１）〜（Ａ７．
３）とほぼ同様である。(B3) Next, the first surface forming the surface of the base 12
On the base film 13a, Co-Fe is used as the second base film 13b.
An alloy film (1 nm) is formed. The procedure is almost the same as the procedures (A6.1) to (A6.3) described above. (B4) Next, the antiferromagnetic layer 1 is formed on the second underlayer 13b.
As No. 4, a Mn-Ir alloy layer (6.8 nm) is formed.
The procedure is the same as the procedures (A7.1) to (A7.
It is almost the same as 3).

【００５７】（Ｂ５）次に、反強磁性体層１４上に、強
磁性体層１５としてＣｏ-Ｆｅ合金層（２ｎｍ）を形成
する。その際の手順は、第２成膜室１０６から第４成膜
室１０７へ基体１２を移動させること以外は上記（Ｂ
３）と同様に行う。 （Ｂ６）次に、強磁性体層１５（Ｃｏ-Ｆｅ合金膜）上
に、非磁性高導電体層１６としてＣｕ膜（２．５ｎｍ）
を形成する。その際の手順は、第４成膜室１０７から第
１成膜室１０５へ基体１２を移動させること以外は上記
（Ｂ２）と同様に行う。(B5) Next, a Co—Fe alloy layer (2 nm) is formed on the antiferromagnetic layer 14 as the ferromagnetic layer 15. The procedure at that time is the same as the above (B) except that the base 12 is moved from the second film formation chamber 106 to the fourth film formation chamber 107.
Perform in the same manner as in 3). (B6) Next, a Cu film (2.5 nm) is formed on the ferromagnetic layer 15 (Co—Fe alloy film) as the nonmagnetic high-conductivity layer 16.
To form The procedure at that time is the same as the above (B2) except that the base 12 is moved from the fourth film formation chamber 107 to the first film formation chamber 105.

【００５８】（Ｂ７）次に、非磁性高導電体層(Ｃｕ膜)
１６上に、別の強磁性体層１７としてＣｏ-Ｆｅ合金層
（２ｎｍ）を形成する。その際の手順は、第１成膜室１
０５から第４成膜室１０７へ基体１２を移動させること
以外は上記（Ｂ３）と同様に行う。 （Ｂ８）次に、強磁性体層１７上に、保護層１８として
Ｔａ層（２ｎｍ）を形成する。その手順は、先に説明し
た手順（Ａ９．１）〜（Ａ９．３）とほぼ同様である。(B7) Next, a non-magnetic high conductor layer (Cu film)
A Co—Fe alloy layer (2 nm) is formed as another ferromagnetic layer 17 on 16. The procedure at that time is as follows.
The process is performed in the same manner as in the above (B3) except that the substrate 12 is moved from 05 to the fourth film formation chamber 107. (B8) Next, a Ta layer (2 nm) is formed as a protective layer 18 on the ferromagnetic layer 17. The procedure is almost the same as the procedures (A9.1) to (A9.3) described above.

【００５９】（Ｂ９）最後に、保護層１８の形成を終え
た基体１２を、第５成膜室１０８から第１ロード室１０
１まで移動させることにより、上記Ｂ１〜Ｂ８の工程を
経て製造したスピンバルブ型磁気抵抗素子１０を取り出
す。 上記の手順によって製造したスピンバルブ型磁気抵抗素
子を試料８と呼ぶ。この試料８のスピンバルブ型磁気抵
抗素子の構成は、基体Ｔａ層（５ｎｍ）/第１下地膜(Ｃ
ｕ(１ｎｍ))/第２下地膜(Ｃｏ-Ｆｅ合金(１ｎｍ))/反強
磁性体層（Ｍｎ-Ｉｒ合金（６．８ｎｍ）強磁性体層(Ｃ
ｏ-Ｆｅ合金(２ｎｍ))/非磁性高導電体層(Ｃｕ(２．５
ｎｍ))/強磁性体層(Ｃｏ-Ｆｅ合金(２ｎｍ))/保護層(T
a)となる。(B9) Finally, the substrate 12 on which the protection layer 18 has been formed is removed from the fifth deposition chamber 108 to the first load chamber 10.
The spin valve type magnetoresistive element 10 manufactured through the above steps B1 to B8 is taken out by moving it to 1. The spin-valve magnetoresistive element manufactured by the above procedure is referred to as Sample 8. The configuration of the spin-valve magnetoresistive element of this sample 8 is such that the base Ta layer (5 nm) / the first underlayer (C
u (1 nm)) / second underlayer (Co—Fe alloy (1 nm)) / antiferromagnetic layer (Mn—Ir alloy (6.8 nm) ferromagnetic layer (C
o-Fe alloy (2 nm) / non-magnetic high conductor layer (Cu (2.5
nm)) / ferromagnetic layer (Co-Fe alloy (2 nm)) / protective layer (T
a).

【００６０】更に、下地層１３を構成する第１下地膜１
３ａ及び第２下地膜１３ｂの材質を変更した以外は、前
記の試料８の場合と同様にして、試料１〜７のスピンバ
ルブ型磁気抵抗素子を製造した。得られた試料１〜８の
スピンバルブ型磁気抵抗素子に、２８０℃、１時間の条
件で熱処理を施した後、成膜中の磁界印加方向と同方向
に膜面内に約０．７ｋＯｅ（５６ｋＡ／ｍ）の磁界を印
加しながら冷却した。Further, the first underlayer 1 constituting the underlayer 13
Spin valve type magnetoresistive elements of Samples 1 to 7 were manufactured in the same manner as in Sample 8 except that the materials of 3a and the second underlayer 13b were changed. After subjecting the spin-valve magnetoresistive elements of Samples 1 to 8 to a heat treatment at 280 ° C. for 1 hour, about 0.7 kOe (approximately 0.7 kOe in the film direction in the same direction as the magnetic field application direction during film formation). The cooling was performed while applying a magnetic field of 56 kA / m).

【００６１】これらのスピンバルブ型磁気抵抗素子につ
いて、磁界を印加させながら抵抗変化を測定することに
より、ＭＲ曲線を得た。得られたＭＲ曲線の、磁化固定
層（強磁性体層１５）のループの中心のゼロ点からのシ
フト量より、反強磁性体層１４と強磁性体層１５との間
に生じる交換結合磁界Ｈexを求めた。また、一方向異方
性定数Ｊｋは、Ｊｋ＝Ｍs・ｄf・Ｈexの式により求め
た。ここで、Ｍsは強磁性体層１５の飽和磁化であり、
ここでは振動試料型磁力計（ＶＳＭ）で得られた磁化曲
線より求めた。dfは強磁性体層１５の膜厚であり、やは
りVSMで得られた磁化曲線より見積もった。更に、各試
料のMR曲線におけるプラトー部の有無を観察した。プラ
トー部とは、磁界をピン層の磁化方向と逆方向に印加し
てその強度を増加させた際、スピンバルブ膜の抵抗値が
変化を示さない領域を指す。すなわち、外部磁界に対す
るピン層磁化のピン止めの強さに対応する。結果を表３
に併せて示す。プラトー部が存在する場合を○、印加磁
界増加（ここでは負方向）とともに抵抗値が減少する場
合、すなわちプラトー部が存在しない場合を×で表す。With respect to these spin-valve magnetoresistive elements, an MR curve was obtained by measuring a resistance change while applying a magnetic field. The exchange coupling magnetic field generated between the antiferromagnetic layer 14 and the ferromagnetic layer 15 based on the shift amount of the obtained MR curve from the zero point at the center of the loop of the magnetization fixed layer (ferromagnetic layer 15). Hex was sought. Further, the one-way anisotropy constant Jk was determined by the equation Jk = Mssdf ・ Hex. Here, Ms is the saturation magnetization of the ferromagnetic layer 15;
Here, it was determined from a magnetization curve obtained by a vibrating sample magnetometer (VSM). df is the thickness of the ferromagnetic layer 15, which was also estimated from the magnetization curve obtained by VSM. Furthermore, the presence or absence of a plateau in the MR curve of each sample was observed. The plateau portion refers to a region where the resistance value of the spin valve film does not change when a magnetic field is applied in a direction opposite to the magnetization direction of the pinned layer to increase its strength. That is, it corresponds to the pinning strength of the pinned layer magnetization with respect to the external magnetic field. Table 3 shows the results
Are shown together. The case where the plateau portion exists is represented by 、, and the case where the resistance value decreases with an increase in the applied magnetic field (here, the negative direction), that is, the case where the plateau portion does not exist is represented by x.

【００６２】[0062]

【表３】 [Table 3]

【００６３】次に、上記の試料１〜８の比較例として、
単層構造の下地層を備えたこと以外は上記のスピンバル
ブ型磁気抵抗素子１０と同じ構成である比較例のスピン
バルブ型磁気抵抗素子を製造した。これらのスピンバル
ブ型磁気抵抗素子を試料９〜試料２２と呼ぶ。得られた
試料９〜２２のスピンバルブ型磁気抵抗素子に、２８０
℃、１時間の条件で熱処理を施した後、成膜中の磁界印
加方向と同方向に膜面内に約０．７ｋＯｅ（５６ｋＡ／
ｍ）の磁界を印加しながら冷却した。Next, as a comparative example of the above samples 1 to 8,
A spin-valve magnetoresistive element of a comparative example having the same configuration as the above-described spin-valve magnetoresistive element 10 except that the underlayer having a single-layer structure was provided. These spin-valve magnetoresistive elements are referred to as Samples 9 to 22. 280 were added to the obtained spin valve type magnetoresistive elements of Samples 9 to 22.
After performing heat treatment at a temperature of 1 ° C. for 1 hour, the film is applied with about 0.7 kOe (56 kA /
m) while applying a magnetic field.

【００６４】これらのスピンバルブ型磁気抵抗素子につ
いて、磁界を印加させながら抵抗変化を測定することに
より、ＭＲ曲線を得た。得られたＭＲ曲線から、上記と
同様にして交換結合磁界Ｈexを求め、更に一方向異方性
定数Ｊｋを求めた。結果を表４に示す。更に、各試料の
MR曲線におけるプラトー部の有無を観察し、結果を表４
に併せて示した。With respect to these spin-valve magnetoresistive elements, an MR curve was obtained by measuring a resistance change while applying a magnetic field. From the obtained MR curve, the exchange coupling magnetic field Hex was determined in the same manner as described above, and the one-way anisotropy constant Jk was further determined. Table 4 shows the results. Furthermore, for each sample
The presence or absence of a plateau in the MR curve was observed, and the results were shown in Table 4.
Are also shown.

【００６５】[0065]

【表４】 [Table 4]

【００６６】表３から以下の結果が得られた。 （１）試料１、５、７、８は、いずれも下地層にＣｕ膜
を含むものであり、本発明に係る交換結合素子を備えた
スピンバルブ型磁気抵抗素子である。これらのスピンバ
ルブ型磁気抵抗素子においては、Ｊｋが０．２８ｅｒｇ
／ｃｍ2以上となり、また、交換結合磁界Hexは、Ｍｓが
１５００ｅｍｕ／ｃｍ3のＣｏ-Ｆｅ合金膜１．８ｎｍに
対して１ｋＯｅ（８０ｋＡ／ｍ）以上を示している。 （２）第１、第２下地膜のいずれか一方をＣｕ膜にすれ
ば、高いＪｋ及びＨexを示すことから、Ｊｋ及びＨexは
Ｃｕ膜及びＮｉ-Ｆｅ合金膜またはＣｏ-Ｆｅ合金膜の積
層順序には依存しないことがわかる。 （３）また、試料１、５、７、８はいずれも、ＭＲ曲線
においてプラトー部が観察されている。プラトー部の存
在は、ピン層全体の磁化が反強磁性膜によってHex近傍
まで安定してピン止めされていることを示している。 （４）ところで試料３は、下地層にＣｕ膜を含むもので
あるが、試料１、５、７、８に比べHex及びＪｋが低
い。これは、第１下地膜（Ni~Fe膜）の厚みが２ｎｍと
厚いため結晶粒が成長し、下地層表面の平坦性が悪化
し、この結果、反強磁性膜／強磁性膜界面の平坦性も悪
化して（１１１）面同士の接触確率が前記３つの試料よ
りも減少したためと考えられる。 （５）一方、試料２、６は下地にCu膜を含まないもので
あり、プラトー部が観察されず、安定した交換結合が生
じていないことがわかる。また、試料４もCu膜を含まな
いが、第１下地膜（Ni~Fe膜）２ｎｍにより（１１１）
配向が得られるため、プラトー部及び比較的大きなＪｋ
が得られている。しかし、その大きさは０．２５ｅｒｇ
／ｃｍ2程度であり、Cu膜を含む試料１、５、７、８に
は及ばない。From Table 3, the following results were obtained. (1) Samples 1, 5, 7, and 8 each include a Cu film as an underlayer, and are spin-valve magnetoresistive elements including the exchange coupling element according to the present invention. In these spin-valve magnetoresistive elements, Jk is 0.28 erg.
/ Cm 2 or more, and the exchange coupling magnetic field Hex is 1 kOe (80 kA / m) or more for 1.8 nm of the Co—Fe alloy film having Ms of 1500 emu / cm 3 . (2) If one of the first and second underlayers is a Cu film, high Jk and Hex are exhibited. Therefore, Jk and Hex are a stack of a Cu film and a Ni—Fe alloy film or a Co—Fe alloy film. It turns out that it does not depend on the order. (3) In each of Samples 1, 5, 7, and 8, a plateau was observed in the MR curve. The presence of the plateau indicates that the magnetization of the entire pinned layer is stably pinned to the vicinity of Hex by the antiferromagnetic film. (4) By the way, although the sample 3 includes a Cu film in the underlayer, Hex and Jk are lower than those of the samples 1, 5, 7, and 8. This is because the first underlayer (Ni-Fe film) is so thick as 2 nm that crystal grains grow and the flatness of the underlayer surface deteriorates. As a result, the antiferromagnetic film / ferromagnetic film interface becomes flat. It is considered that the property deteriorated and the contact probability between the (111) planes was smaller than that of the three samples. (5) On the other hand, Samples 2 and 6 do not contain a Cu film as a base, no plateau is observed, and it can be seen that stable exchange coupling has not occurred. Sample 4 also does not contain a Cu film, but the first underlayer (Ni-Fe film) is (111)
Since the orientation is obtained, the plateau and the relatively large Jk
Has been obtained. However, its size is 0.25erg
/ Cm 2 , which is less than Samples 1, 5, 7, and 8 including a Cu film.

【００６７】更に、表４から以下の結果が得られた。 （６）どの試料においても、Ｊｋが０．２７ｅｒｇ／ｃ
ｍ2以下、Hexが１ｋＯｅ（８０ｋＡ／ｍ）以下となり、
スピンバルブ型磁気抵抗素子としては不十分な値になっ
ている。 （７）材料毎に見ると、Ｎｉ-Ｆｅ合金膜では１．５ｎ
ｍ以下、Ｃｏ-Ｆｅ合金膜では２ｎｍ以下になるとプラ
トー部が消失する。この様子は、たとえば試料１１と１
３を比べれば明らかであり、両試料のMR曲線を図６及び
図７に示した。 （８）試料１９〜２１（Ｃｕ膜）のＪｋ及びＨexは、他
の試料（Ｎｉ-Ｆｅ合金膜及びＣｏ-Ｆｅ合金膜）のＪｋ
及びＨexより高くなっている。また、Ｃｕ膜の場合は、
膜厚が１ｎｍでもプラトー部を示しており、このことは
Ｃｕ膜が反強磁性体層及びピン層を（１１１）面配向さ
せる能力に優れていることを示している。 （９）試料２２は、下地層を設けず基体、たとえばＴａ
膜上にスピンバルブ膜を直接成膜した場合のスピンバル
ブ型磁気抵抗素子であるが、この場合、反強磁性膜／ピ
ン層強磁性膜間の交換結合が得られず、従ってスピンバ
ルブ型とならず、MR曲線は得られなかった。Further, the following results were obtained from Table 4. (6) In any sample, Jk is 0.27 erg / c.
m 2 or less, Hex becomes less 1kOe (80kA / m),
This is an insufficient value for a spin-valve magnetoresistive element. (7) Looking at each material, the Ni-Fe alloy film is 1.5 n
m or less, or 2 nm or less in the Co—Fe alloy film, the plateau disappears. This state is shown, for example, in samples 11 and 1.
3 is clear, and the MR curves of both samples are shown in FIGS. (8) Jk and Hex of Samples 19 to 21 (Cu film) are Jk of other samples (Ni—Fe alloy film and Co—Fe alloy film).
And Hex. In the case of a Cu film,
Even when the film thickness is 1 nm, a plateau portion is shown, which indicates that the Cu film is excellent in the ability to orient the antiferromagnetic layer and the pinned layer in the (111) plane. (9) The sample 22 was a substrate, for example, Ta
This is a spin valve type magnetoresistive element in which a spin valve film is formed directly on a film. In this case, exchange coupling between the antiferromagnetic film and the pinned ferromagnetic film cannot be obtained. No MR curve was obtained.

【００６８】以上の結果から、下地層を厚さ１．５ｎｍ
以下のＣｕ膜とNi~Fe合金膜またはＣｏ-Ｆｅ合金膜の積
層構造とすることで、単層膜下地の場合よりもＪｋ及び
Hexが向上することがわかる。この理由は、先にも述べ
たように、単層膜下地と積層膜下地全厚が等しい場合、
下地層を積層構造とすることで、結晶粒の粒成長が抑制
され、下地層の表面が平坦になって、下地層の（１１
１）面と反強磁性体層の（１１１）面との接触確率が高
くなり、更には反強磁性体層及び強磁性体層間の（１１
１）面を介しての接触確率が高くなるため、交換結合磁
界Ｈex及び一方向異方性定数Ｊｋが向上したためと考え
られる。なお、単層膜下地において、膜厚を積層膜下地
の場合に示した２．０ｎｍ以下にすることはＮｉ-Ｆｅ
合金膜、Ｃｏ-Ｆｅ合金膜の場合にはプラトー部が得ら
れなくなるため困難である。Ｃｕ膜では１ｎｍにおいて
もプラトー部が得られており、この場合、膜厚が薄いた
め平坦性も比較的良く、９００〜１０００Ｏｅ（７２〜
８０ ｋＡ／ｍ）のＨｅｘ及び０．２６〜０．２７ｅｒ
ｇ／ｃｍ2のＪｋが得られている。しかしながら、下地
膜が１ｎｍ程度と極薄の場合、作製した素子の再現性・
安定性にばらつきが生じ易いという問題がある。よっ
て、１ｎｍ程度の下地膜を積層し、２ｎｍ程度とした本
発明例が、生産の安定性の観点からも望ましい。From the above results, the thickness of the underlayer was set to 1.5 nm.
By having a laminated structure of the following Cu film and Ni-Fe alloy film or Co-Fe alloy film, Jk and
It turns out that Hex improves. The reason for this is that, as described above, when the single-layer film base and the total thickness of the stacked film base are equal,
When the underlayer has a laminated structure, the growth of crystal grains is suppressed, the surface of the underlayer becomes flat, and (11)
The contact probability between the (1) plane and the (111) plane of the antiferromagnetic layer is increased, and the (11) plane between the antiferromagnetic layer and the ferromagnetic layer is further increased.
1) It is considered that the exchange coupling magnetic field Hex and the one-way anisotropy constant Jk were improved because the contact probability via the surface was increased. It should be noted that, in the case of a single-layer film underlayer, the film thickness is set to 2.0 nm or less as shown in the case of a multilayer film underlayer.
In the case of an alloy film or a Co—Fe alloy film, a plateau cannot be obtained, which is difficult. In the case of the Cu film, a plateau portion is obtained even at 1 nm. In this case, the flatness is relatively good because the film thickness is small, and 900 to 1000 Oe (72 to
Hex of 80 kA / m) and 0.26-0.27er
Jk of g / cm 2 was obtained. However, when the underlying film is as thin as about 1 nm, the reproducibility
There is a problem that the stability tends to vary. Therefore, the example of the present invention in which a base film of about 1 nm is laminated and the thickness is set to about 2 nm is desirable also from the viewpoint of production stability.

【００６９】従って上記のスピンバルブ型磁気抵抗素子
１０によれば、本発明に係る交換結合素子１１を備えて
いるので、外部磁界によって強磁性体層１５（磁化固定
層）の磁化方向が変動することがなく、高いＭＲ比を発
現することができる。Therefore, according to the spin valve type magnetoresistive element 10 described above, since the exchange coupling element 11 according to the present invention is provided, the magnetization direction of the ferromagnetic layer 15 (fixed magnetization layer) is changed by an external magnetic field. Without causing a high MR ratio.

【００７０】また、上記のスピンバルブ型磁気抵抗素子
１０によれば、下地層１３の層厚を２ｎｍ程度にするこ
とができるので、スピンバルブ型磁気抵抗素子１０全体
の厚さを３０ｎｍ以下程度にすることができ、ギャップ
長を短縮して高記録密度化に対応させることができる。According to the spin-valve magnetoresistive element 10, the thickness of the underlayer 13 can be reduced to about 2 nm, so that the entire thickness of the spin-valve magnetoresistive element 10 is reduced to about 30 nm or less. Therefore, the gap length can be reduced to cope with higher recording density.

【００７１】（第３の実施形態）図８には、本発明の第
４の実施形態であるＧＭＲ型再生ヘッド及びこの再生ヘ
ッドと誘導型記録ヘッドを組み合わせた記録再生分離型
磁気ヘッドを示し、図９には、ＧＭＲ型再生ヘッドの要
部を示す。図８及び図９において、符号８００はスピン
バルブ型磁気抵抗素子、８０１は交換結合素子、８０２
は下地層、８０３は反強磁性体層、８０４は固定磁化層
として機能する強磁性体層、８０５は非磁性高導電体
層、８０６は磁化自由層として機能する強磁性体層、８
０７はＭＲ電極、８０８はハード膜、８１１はＧＭＲ型
再生ヘッド、８１２は記録ヘッドの下部磁極（８２４）
を兼ねるＧＭＲ型再生ヘッド８１１の上部シールド層、
８１３、８１４は絶縁膜、８１５はＧＭＲ型再生ヘッド
８１１の下部シールド、８２１は記録ヘッド、８２２は
記録ヘッド８２１の上部ポール、８２３は導電体からな
るコイル、８２４はＧＭＲ型再生ヘッド８１１の上部シ
ールド（８１２）を兼ねる記録ヘッドの下部磁極であ
る。(Third Embodiment) FIG. 8 shows a GMR reproducing head according to a fourth embodiment of the present invention and a recording / reproducing separated magnetic head obtained by combining this reproducing head with an inductive recording head. FIG. 9 shows a main part of a GMR type reproducing head. 8 and 9, reference numeral 800 denotes a spin-valve magnetoresistive element, reference numeral 801 denotes an exchange coupling element, and reference numeral 802.
803, an antiferromagnetic layer; 804, a ferromagnetic layer functioning as a fixed magnetic layer; 805, a nonmagnetic high-conductivity layer; 806, a ferromagnetic layer functioning as a magnetization free layer;
07 is an MR electrode, 808 is a hard film, 811 is a GMR reproducing head, and 812 is a lower magnetic pole (824) of a recording head.
The upper shield layer of the GMR read head 811 also serving as
813 and 814 are insulating films, 815 is a lower shield of the GMR reproducing head 811, 821 is a recording head, 822 is an upper pole of the recording head 821, 823 is a coil made of a conductor, and 824 is an upper shield of the GMR reproducing head 811. This is the lower magnetic pole of the recording head that also serves as (812).

【００７２】本発明に係る交換結合素子８０１を含むス
ピンバルブ型磁気抵抗素子８００を上部シールド層８１
２と下部シールド層８１５で挟んだ部分が再生ヘッドと
して機能し、薄膜Ｃｕからなるコイル８２３を上部磁極
８２２と下部磁極８２４で挟んだ部分が記録ヘッドとし
て機能する。この記録再生分離型磁気ヘッドは、ＧＭＲ
型再生ヘッド８１１の上部シールド層８１２が、記録ヘ
ッド８２１の下部磁極８２４を兼ねる構成とした場合で
ある。上記構成において、ＧＭＲ型再生ヘッド８１１は
スピンバルブ型磁気抵抗素子８００の上下に絶縁膜８１
３、８１４を配した状態で、ギャップ長（上部シールド
層８１２と下部シールド層８１５の間隔）０．１μｍを
実現した。また、Ｊｋが大きく高温下でもピン層強磁性
膜の強固なピン止めが可能であるため、HDDの実使用状
態で再生ヘッドが到達する危険性がある150℃程度の高
温下においても、MR比は室温における値の85%程度の値
を維持することができた。The spin valve type magnetoresistive element 800 including the exchange coupling element 801 according to the present invention is connected to the upper shield layer 81.
2 and the lower shield layer 815 function as a read head, and the portion of the coil 823 made of thin film Cu between the upper magnetic pole 822 and the lower magnetic pole 824 functions as a write head. This recording / reproducing separation type magnetic head is a GMR
In this case, the upper shield layer 812 of the read head 811 also serves as the lower magnetic pole 824 of the write head 821. In the above configuration, the GMR read head 811 has insulating films 81 above and below the spin-valve magnetoresistive element 800.
The gap length (the distance between the upper shield layer 812 and the lower shield layer 815) of 0.1 μm was realized in a state where 3,814 were arranged. In addition, since the pinned ferromagnetic film can be firmly pinned even at a high Jk even at a high temperature, the MR ratio can be increased even at a high temperature of about 150 ° C. where there is a risk that the read head will reach the HDD in actual use. Was able to maintain a value of about 85% of the value at room temperature.

【００７３】また、上記の構成では、ＧＭＲ型再生ヘッ
ド８１１の上部シールド層８１２が記録ヘッド８２１の
下部磁極８２４を兼ねる場合について説明したが、上部
シールド層と下部磁極に別材料を用いて別材料とした
り、あるいは両者の間に他の構成物を配置しても本発明
の作用、効果は失われるものではない。In the above configuration, the case where the upper shield layer 812 of the GMR read head 811 also serves as the lower magnetic pole 824 of the recording head 821 has been described. However, different materials are used for the upper shield layer and the lower magnetic pole. However, the operation and effect of the present invention are not lost even if other components are arranged between them.

【００７４】[0074]

【発明の効果】以上、詳細に説明したように、本発明の
交換結合素子によれば、反強磁性体層の下地層が、少な
くとも２以上の下地膜からなり、前記各下地膜のいずれ
か１つがＣｕ膜であるとともにいずれか他の１つがＮｉ
-Ｆｅ合金膜またはＣｏ-Ｆｅ合金膜であるので、下地層
における結晶粒成長が抑制されて下地層と反強磁性体層
の界面が平坦化され、これにより反強磁性体層及び強磁
性体層の界面も平坦化されるため、反強磁性体層及び強
磁性体層間の（１１１）面を介しての接触確率が高くな
り、交換結合磁界Ｈex及び一方向異方性定数Ｊｋを向上
できる。As described above in detail, according to the exchange coupling device of the present invention, the underlayer of the antiferromagnetic layer is composed of at least two or more underlayers. One is a Cu film and one of the other is Ni
Since the film is a Fe—Fe alloy film or a Co—Fe alloy film, crystal grain growth in the underlayer is suppressed, and the interface between the underlayer and the antiferromagnetic layer is flattened. Since the interface of the layers is also flattened, the probability of contact between the antiferromagnetic layer and the ferromagnetic layer via the (111) plane is increased, and the exchange coupling magnetic field Hex and the unidirectional anisotropy constant Jk can be improved. .

【００７５】更に本発明の交換結合素子によれば、反強
磁性体層と強磁性体層との界面に誘導される一方向異方
性定数Ｊｋが０．２８ｅｒｇ／ｃｍ２以上なので、強磁
性体層の磁化方向を強く固定することが可能になり、高
温下での外乱磁界によるピン層の磁化方向変動を防止で
き、また製造時における静電気放電による強磁性体層の
磁化方向の反転を防止でき、交換結合素子の特性を向上
できると共に製造時の不良率を低下させることができ
る。Further, according to the exchange coupling device of the present invention, the one-way anisotropy constant Jk induced at the interface between the antiferromagnetic layer and the ferromagnetic layer is 0.28 erg / cm 2 or more. It is possible to strongly fix the magnetization direction of the layer, prevent fluctuations in the magnetization direction of the pinned layer due to a disturbance magnetic field at high temperatures, and prevent reversal of the magnetization direction of the ferromagnetic layer due to electrostatic discharge during manufacturing. In addition, the characteristics of the exchange coupling element can be improved, and the defective rate at the time of manufacturing can be reduced.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 本発明の第１の実施形態である交換結合素
子の断面模式図である。FIG. 1 is a schematic cross-sectional view of an exchange coupling device according to a first embodiment of the present invention.

【図２】 図１に示す交換結合素子を製造する際に用
いる成膜装置を示す模式図である。FIG. 2 is a schematic view showing a film forming apparatus used when manufacturing the exchange coupling element shown in FIG.

【図３】 本発明の交換結合素子の要部を示す断面模
式図である。FIG. 3 is a schematic sectional view showing a main part of the exchange coupling element of the present invention.

【図４】 下地層が単層構造である交換結合素子の要
部を示す断面模式図である。FIG. 4 is a schematic cross-sectional view showing a main part of an exchange coupling device having a single-layer underlayer.

【図５】 本発明の第２の実施形態であるスピンバル
ブ型磁気抵抗素子の断面模式図である。FIG. 5 is a schematic sectional view of a spin-valve magnetoresistive element according to a second embodiment of the present invention.

【図６】 試料１１のスピンバルブ型磁気抵抗素子の
ＭＲ曲線を示すグラフである。FIG. 6 is a graph showing an MR curve of the spin-valve magnetoresistive element of Sample 11.

【図７】 試料１３のスピンバルブ型磁気抵抗素子の
ＭＲ曲線を示すグラフである。FIG. 7 is a graph showing an MR curve of the spin-valve magnetoresistive element of Sample 13.

【図８】 本発明の第３の実施形態である記録再生分
離型磁気ヘッドを示す斜視図である。FIG. 8 is a perspective view showing a read / write separated magnetic head according to a third embodiment of the present invention.

【図９】 図８に示す記録再生分離型磁気ヘッドに備
えられたＧＭＲ型再生ヘッドの要部を示す断面模式図で
ある。9 is a schematic cross-sectional view showing a main part of a GMR type reproducing head provided in the recording / reproducing separation type magnetic head shown in FIG.

【符号の説明】 １、１１、８０１ 交換結合素子、 ２、１２ 基体、 ３、１３、８０２ 下地層、 ３ａ、１３ａ 第１下地膜、 ３ｂ、１３ｂ 第２下地膜、 ４、１４ 反強磁性体層、 ５、１５ 強磁性体層、 １０、８００ スピンバルブ型磁気抵抗素子。DESCRIPTION OF SYMBOLS 1, 11, 801 Exchange coupling element, 2, 12 Base, 3, 13, 802 Underlayer, 3a, 13a First underlayer, 3b, 13b Second underlayer, 4, 14 Antiferromagnet Layer, 5, 15 ferromagnetic layer, 10, 800 spin valve type magnetoresistive element.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｆ 10/32 Ｇ０１Ｒ 33/06 Ｒ (72)発明者 屋上 公二郎 宮城県仙台市青葉区荒巻字青葉05 東北大 学大学院工学研究科電子工学専攻内 (72)発明者 角田 匡清 宮城県仙台市青葉区荒巻字青葉05 東北大 学大学院工学研究科電子工学専攻内 (72)発明者 高橋 研 宮城県仙台市太白区人来田２丁目20−２ Ｆターム(参考） 2G017 AA10 AB07 AC01 AD55 5D034 BA03 BA04 BA05 BA12 CA08 DA07 5E049 AA01 AA04 AA07 AC05 BA12 CB01 DB12 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat ゛ (Reference) H01F 10/32 G01R 33/06 R (72) Inventor Koujiro Roof 05 Aoba, Aramaki, Aoba-ku, Aoba-ku, Sendai, Miyagi Tohoku Graduate School of Engineering, Graduate School of Engineering (72) Inventor Masayoshi Tsunoda 05 Aoba, Aramaki, Aoba-ku, Aoba-ku, Sendai, Miyagi Prefecture Tohoku University Graduate School of Engineering, Department of Electronics (72) Inventor Ken Takahashi Sendai, Miyagi 2-20-1, Hitokita, Taebaek-gu F-term (reference) 2G017 AA10 AB07 AC01 AD55 5D034 BA03 BA04 BA05 BA12 CA08 DA07 5E049 AA01 AA04 AA07 AC05 BA12 CB01 DB12

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 基体上に、下地層、反強磁性体層、及び
該反強磁性体層と交換結合する強磁性層が順次積層され
てなり、 前記下地層が、少なくとも２以上の下地膜からなり、前
記下地膜のいずれか１つがＣｕ膜からなるとともに他の
いずれか１つがＮｉ-Ｆｅ合金膜またはＣｏ-Ｆｅ合金膜
からなることを特徴とする交換結合素子。1. An underlayer, an antiferromagnetic layer, and a ferromagnetic layer exchange-coupled to the antiferromagnetic layer are sequentially laminated on a substrate, wherein the underlayer comprises at least two or more underlayers. Wherein one of the base films is made of a Cu film and the other is made of a Ni—Fe alloy film or a Co—Fe alloy film. 【請求項２】 前記下地層の全層厚が１ｎｍ以上５ｎｍ
以下であり、前記各下地膜の各膜厚がそれぞれ０．５ｎ
ｍ以上１．５ｎｍ以下であることを特徴とする請求項１
に記載の交換結合素子。2. An underlayer having a total thickness of 1 nm or more and 5 nm or more.
The thickness of each of the base films is 0.5 n
2. The structure according to claim 1, wherein the thickness is not less than m and not more than 1.5 nm.
4. The exchange coupling element according to item 1. 【請求項３】 前記下地層が、基体に隣接する第１下地
膜と、前記反強磁性層に隣接する第２下地膜との積層膜
からなり、前記第１、第２下地膜のいずれか一方がＣｕ
膜からなるとともに他方がＮｉ-Ｆｅ合金膜またはＣｏ-
Ｆｅ合金膜からなることを特徴とする請求項１に記載の
交換結合素子。3. An underlayer comprising a laminated film of a first underlayer adjacent to a substrate and a second underlayer adjacent to the antiferromagnetic layer, wherein the underlayer is formed of one of the first and second underlayers. One is Cu
A Ni-Fe alloy film or Co-
The exchange coupling device according to claim 1, comprising an Fe alloy film. 【請求項４】 前記下地層の全層厚が１ｎｍ以上３ｎｍ
以下であり、前記第１、第２下地膜の各膜厚がそれぞれ
０．５ｎｍ以上１．５ｎｍ以下であることを特徴とする
請求項３に記載の交換結合素子。4. An underlayer having a total thickness of 1 nm or more and 3 nm or more.
The exchange coupling device according to claim 3, wherein each of the first and second underlayers has a thickness of 0.5 nm or more and 1.5 nm or less. 【請求項５】 請求項１ないし請求項４のいずれかに記
載の交換結合素子を備えたことを特徴とするスピンバル
ブ型磁気抵抗素子。5. A spin-valve magnetoresistive element comprising the exchange coupling element according to claim 1. Description: 【請求項６】 請求項１ないし請求項４のいずれかに記
載の交換結合素子を備えたことを特徴とする磁気ヘッ
ド。6. A magnetic head comprising the exchange coupling element according to claim 1. Description:
JP2000368922A 2000-12-04 2000-12-04 Exchange coupled device, spin-valve-type thin-film magnetic element, and magnetic head Pending JP2002171012A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003092084A1 (en) * 2002-04-23 2003-11-06 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same
US7079361B2 (en) 2001-04-24 2006-07-18 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7079361B2 (en) 2001-04-24 2006-07-18 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same
WO2003092084A1 (en) * 2002-04-23 2003-11-06 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element, manufacturing method thereof, magnetic head, magnetic memory, and magnetic recording device using the same
US6943041B2 (en) 2002-04-23 2005-09-13 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element and method for producing the same, as well as magnetic head, magnetic memory and magnetic recording device using the same

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