JP2002169289A - Polymer for photoresist and resin composition for photoresist - Google Patents

Polymer for photoresist and resin composition for photoresist

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Publication number
JP2002169289A
JP2002169289A JP2000368098A JP2000368098A JP2002169289A JP 2002169289 A JP2002169289 A JP 2002169289A JP 2000368098 A JP2000368098 A JP 2000368098A JP 2000368098 A JP2000368098 A JP 2000368098A JP 2002169289 A JP2002169289 A JP 2002169289A
Authority
JP
Japan
Prior art keywords
group
hydrogen atom
photoresist
meth
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000368098A
Other languages
Japanese (ja)
Other versions
JP4688282B2 (en
Inventor
Kiyoharu Tsutsumi
聖晴 堤
Akira Horai
晃 宝来
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daicel Corp
Original Assignee
Daicel Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daicel Chemical Industries Ltd filed Critical Daicel Chemical Industries Ltd
Priority to JP2000368098A priority Critical patent/JP4688282B2/en
Publication of JP2002169289A publication Critical patent/JP2002169289A/en
Application granted granted Critical
Publication of JP4688282B2 publication Critical patent/JP4688282B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a photoresist resin which can form a fine pattern with excellent homogeneity and high resolution. SOLUTION: The photoresist polymer compound contains at least one kind of monomer unit expressed by formula (I). In the formula, Ra is a hydrogen atom or methyl group and R1 is a hydrogen atom or 1-20C straight-chain hydrocarbon group, branched hydrocarbon group, alicyclic hydrocarbon group, crosslinked alicyclic hydrocarbon group or heterocyclic group which may have substituents.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体の微細加工な
どを行う際に用いるフォトレジスト用の高分子化合物
と、この高分子化合物を含有するフォトレジスト用樹脂
組成物、及び半導体の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polymer compound for a photoresist used when performing fine processing of a semiconductor, a resin composition for a photoresist containing the polymer compound, and a method for producing a semiconductor.

【0002】[0002]

【従来の技術】半導体製造工程で用いられるポジ型フォ
トレジスト用樹脂は、基板密着性を示す機能と、露光に
よって光酸発生剤から発生する酸により脱離してアルカ
リ現像液に対して可溶になる機能が必要である。また、
フォトレジスト用樹脂は、ドライエッチング耐性をも具
備している必要がある。特に、露光工程での光源とし
て、現在エキシマレーザーのArFを使用し、ギガオーダ
ーの半導体への期待は高まっている。しかし、ArFは遠
紫外で193nmの波長であることから、レジスト材料
も紫外線領域での透明性が要求され,新規なモノマーが
提案されている。
2. Description of the Related Art A positive photoresist resin used in a semiconductor manufacturing process has a function of exhibiting substrate adhesion and is soluble in an alkali developing solution by being desorbed by an acid generated from a photoacid generator upon exposure. Function is required. Also,
The photoresist resin must also have dry etching resistance. In particular, the use of an excimer laser, ArF, as a light source in the exposure step, and expectations for giga-order semiconductors are increasing. However, since ArF has a wavelength of 193 nm in the deep ultraviolet, the resist material also requires transparency in the ultraviolet region, and a novel monomer has been proposed.

【0003】その中において、ラクトン骨格を含む多環
脂環式化合物は、基盤密着性の機能を持ち、さらにエッ
チング耐性が期待され最近注目をあびている。その中
で、ノルボルナン骨格を応用したものとして、特開20
00−26446や、特開2000−159758があ
るが、前者には極性基はラクトン骨格のみで、レジスト
材としての有機溶媒への溶解性に難があり、後者はモノ
マー合成に際して、アルキル基を含んだシクロペンタジ
エンを必要とし、経済性に問題を残す。いずれにして
も、いまだ十分なる機能を有し、しかも経済性あるラク
トン骨格を含むモノマーは開発されていない。
[0003] Among them, polycyclic alicyclic compounds containing a lactone skeleton have recently attracted attention because they have a function of substrate adhesion and are expected to have etching resistance. Among them, Japanese Patent Application Laid-Open No.
There are JP-A-00-26446 and JP-A-2000-159758. However, in the former, the polar group has only a lactone skeleton and is difficult to dissolve in an organic solvent as a resist material. Cyclopentadiene is required, leaving economic problems. In any case, a monomer having a lactone skeleton that has sufficient functions and is economical has not been developed.

【0004】[0004]

【発明が解決しようとする課題】従って、本発明の目的
は、基板に対する密着性、及び有機溶媒への溶解性とエ
ッチング耐性とをバランスよく兼ね備えた新規なフォト
レジスト用高分子化合物を提供することにある。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a novel photoresist polymer compound having a good balance between adhesion to a substrate and solubility in an organic solvent and etching resistance. It is in.

【0005】本発明の他の目的は、微細なパターンを高
い精度で形成できるフォトレジスト用樹脂組成物、及び
半導体の製造方法を提供することにある。
Another object of the present invention is to provide a photoresist resin composition capable of forming a fine pattern with high precision, and a method of manufacturing a semiconductor.

【0006】[0006]

【課題を解決するための手段】本発明者らは、上記目的
を達成するため鋭意検討した結果、ラクトン環が縮合し
た特定構造の脂環式骨格を有するモノマー単位を含むポ
リマーをフォトレジスト用樹脂として用いると、基板に
対する密着性及び有機溶媒への溶解性とエッチング耐性
とをバランスよく具備したフォトレジスト用高分子化合
物が得られることを見出し、本発明を完成した。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies to achieve the above object, and have found that a polymer containing a monomer unit having an alicyclic skeleton having a specific structure in which a lactone ring is condensed is used as a resin for a photoresist. As a result, the present inventors have found that a polymer compound for photoresist having a good balance between adhesion to a substrate, solubility in an organic solvent, and etching resistance can be obtained, and the present invention has been completed.

【0007】すなはち、本発明は下記式(I)That is, the present invention provides the following formula (I)

【0008】[0008]

【化4】 Embedded image

【0009】(上式において、Raは水素原子又はメチ
ル基を示し、R1は水素原子又は置換基を有してもよい
炭素数1〜20の直鎖状炭化水素基、分岐状炭化水素
基、脂環式炭化水素基、有橋脂環式炭化水素基、又は複
素環基を示す。)で表される少なくとも1種のモノマー
単位を含むフォトレジスト用高分子化合物を提供する。
(In the above formula, R a represents a hydrogen atom or a methyl group, and R 1 represents a hydrogen atom or a linear or branched hydrocarbon group having 1 to 20 carbon atoms which may have a substituent.) A macrocyclic group, an alicyclic hydrocarbon group, a bridged alicyclic hydrocarbon group, or a heterocyclic group).

【0010】前記フォトレジスト用高分子化合物は、前
記式(I)から選択された少なくとも1種のモノマー単
位と、下記式(IIa)〜(IIg)
The polymer compound for a photoresist comprises at least one monomer unit selected from the formula (I) and the following formulas (IIa) to (IIg):

【0011】[0011]

【化5】 Embedded image

【0012】(上式において、Raは水素原子又はメチ
ル基を示し、R2及びR3は、同一又は異なって、水素原
子、又は炭素数1〜8の炭化水素基を示し、R46は、
同一又は異なって、水素原子、保護基を有していてもよ
いヒドロキシル基又はメチル基を示し、R7及びR8は、
同一又は異なって、水素原子、保護基を有していてもよ
いヒドロキシル基又は−COOR9を示し、R9はt−ブ
チル基、2−テトラヒドロフラニル基、2−テトラヒド
ロピラニル基又は2−オキセパニル基を示し、R10はメ
チル基又はエチル基を示し、R11及びR12は、同一又は
異なって、水素原子、保護基を有していてもよいヒドロ
キシル基又はオキソ基を示し、R13は置換基を有しても
よい3級の炭化水素基を示し、R1418は、同一又は異
なって、水素原子又はメチル基を示し、R19はt−ブチ
ル基、2−テトラヒドロフラニル基、2−テトラヒドロ
ピラニル基又は2−オキセパニル基を示す。mは1〜3
の整数を示し、nは0又は1を示す。)から選択された
少なくとも1種のモノマー単位を含んでいてもよい。
[0012] (In the above formula, R a represents a hydrogen atom or a methyl group, R 2 and R 3 are the same or different and each represents a hydrogen atom, or a hydrocarbon group having 1 to 8 carbon atoms, R 4 ~ 6 is
The same or different, each represents a hydrogen atom, a hydroxyl group or a methyl group which may have a protecting group, and R 7 and R 8 are
The same or different, and each represents a hydrogen atom, a hydroxyl group which may have a protecting group, or -COOR 9 , wherein R 9 is a t-butyl group, a 2-tetrahydrofuranyl group, a 2-tetrahydropyranyl group, or a 2-oxepanyl. R 10 represents a methyl group or an ethyl group; R 11 and R 12 are the same or different and represent a hydrogen atom, a hydroxyl group or an oxo group which may have a protecting group, and R 13 represents A tertiary hydrocarbon group which may have a substituent, R 14 to R 18 are the same or different and each represent a hydrogen atom or a methyl group, R 19 is a t-butyl group, a 2-tetrahydrofuranyl group, It represents a 2-tetrahydropyranyl group or a 2-oxepanyl group. m is 1-3
And n represents 0 or 1. )) May be included.

【0013】また、式(1)から選択された少なくとも
1種のモノマー単位に加えて、又は式(1)から選択さ
れた少なくとも1種のモノマー単位と、式(IIa)〜
(IIg)から選択された少なくとも1種のモノマー単位
とに加えて、下記式(IIIa)〜(IIIj)
Further, in addition to at least one monomer unit selected from the formula (1) or at least one monomer unit selected from the formula (1),
In addition to at least one monomer unit selected from (IIg), the following formulas (IIIa) to (IIIj)

【0014】[0014]

【化6】 Embedded image

【0015】(上式において、Raは水素原子又はメチ
ル基を示し、R20及びR21は、同一又は異なって、水素
原子、保護基を有していてもよいヒドロキシル基又は保
護基を有していてもよいカルボキシル基を示し、R22
保護基を有していてもよいヒドロキシル基、オキソ基又
は保護基を有していてもよいカルボキシル基を示す。X
13は、同一又は異なって、−CH2−又は−CO−O
−を示す。R2325は、同一又は異なって、水素原子又
はメチル基を示す。R26及びR27は、同一又は異なっ
て、水素原子又はメチル基を示す。R2832は、同一又
は異なって、水素原子又はメチル基を示す。R33は、水
素原子又は置換基を有してもよい炭素数1〜20の直鎖
炭化水素、分岐炭化水素、脂環式炭化水素、有橋脂環式
炭化水素を示す。R3437は、同一又は異なって、水素
原子又はメチル基を示す。R38は、水素原子、保護基を
有していてもよいヒドロキシル基、保護基を有していて
もよいヒドロキシメチル基、保護基を有していてもよい
カルボキシル基を示す。R3956はそれぞれ水素原子、
メチル基又はエチル基を示す。o、p、q及びrはそれ
ぞれ0又は1を示す。)から選択された少なくとも1種
のモノマー単位を含んでいてもよい。
(In the above formula, R a represents a hydrogen atom or a methyl group, and R 20 and R 21 are the same or different and have a hydrogen atom, a hydroxyl group which may have a protecting group, or a protecting group. X represents a carboxyl group which may be protected, and R 22 represents a hydroxyl group, an oxo group or a carboxyl group which may have a protection group, which may have a protection group.
1-3 are the same or different, -CH 2 - or -CO-O
Indicates-. R 23 to 25 are the same or different and each represent a hydrogen atom or a methyl group. R 26 and R 27 are the same or different and each represent a hydrogen atom or a methyl group. R 28 ~ 32 are the same or different, represent a hydrogen atom or a methyl group. R 33 represents a hydrogen atom or having 1 to 20 carbon atoms which may have a substituent linear hydrocarbons, branched hydrocarbons, alicyclic hydrocarbons, the bridged alicyclic hydrocarbon. R34 to R37 are the same or different and each represent a hydrogen atom or a methyl group. R 38 represents a hydrogen atom, a hydroxyl group optionally having a protecting group, a hydroxymethyl group optionally having a protecting group, or a carboxyl group optionally having a protecting group. R 39 to 56 each represent a hydrogen atom,
It represents a methyl group or an ethyl group. o, p, q and r each represent 0 or 1. )) May be included.

【0016】前記フォトレジスト用高分子化合物は、脂
環式炭化水素環を含む基を有するモノマー単位(式
(I)で表されるモノマー単位を除く)を全体の0.1
〜50モル%含むのが好ましい。
The polymer compound for a photoresist contains 0.1% of a monomer unit having a group containing an alicyclic hydrocarbon ring (excluding the monomer unit represented by the formula (I)).
It is preferable to contain 含 む 50 mol%.

【0017】また、前記フォトレジスト用高分子化合物
は、Fedorsの方法による溶解度パラメーターの値
が19.5〜24.5(J/cm31/2の範囲にあるの
が好ましい。
It is preferable that the polymer compound for a photoresist has a solubility parameter value in the range of 19.5 to 24.5 (J / cm 3 ) 1/2 according to the Fedors method.

【0018】本発明は、また、上記のフォトレジスト用
高分子化合物と光酸発生剤とを少なくとも含むフォトレ
ジスト用樹脂組成物を提供する。
The present invention also provides a photoresist resin composition comprising at least the above-mentioned polymer compound for photoresist and a photoacid generator.

【0019】本発明は、さらに、上記のフォトレジスト
用樹脂組成物を基材又は基板上に塗布してレジスト塗膜
を形成し、露光及び現像を経てパターンを形成する工程
を含む半導体の製造方法を提供する。
The present invention further provides a method for producing a semiconductor, comprising the steps of applying the above-mentioned resin composition for photoresist on a substrate or substrate to form a resist coating film, and exposing and developing to form a pattern. I will provide a.

【0020】なお、本明細書では、「アクリル」と「メ
タクリル」とを「(メタ)アクリル」、「アクリロイ
ル」と「メタクリロイル」とを「(メタ)アクリロイ
ル」と総称する場合がある。
In this specification, “acryl” and “methacryl” may be collectively referred to as “(meth) acryl”, and “acryloyl” and “methacryloyl” may be collectively referred to as “(meth) acryloyl”.

【0021】[0021]

【発明の実施の形態】本発明のフォトレジスト用高分子
化合物は、ポリマー分子を構成する構造単位として、前
記式(I)から選択された少なくとも1種のモノマー単
位(繰り返し単位)(以下、「モノマーユニットI」と
称することがある)を含んでいる。このモノマーユニッ
トIは、親水性の高いラクトン環及びカルボキシル基を
有しているため、基板への密着性を高める密着性付与ユ
ニットとして機能する。また、脂環式炭素環(シクロヘ
キサン環)をも有しているため、エッチング耐性を高め
る機能をも有する。更に、ノルボルネン環に置換したカ
ルボキシル基(COOR 1)のエステル基であるR1に、
酸により分解しアルカリ可溶となる基を導入すれば、酸
による脱離性機能も有することになる。
BEST MODE FOR CARRYING OUT THE INVENTION Polymer for photoresist of the present invention
Compounds are structural units that make up polymer molecules.
At least one monomer selected from the formula (I)
Position (repeating unit) (hereinafter referred to as “monomer unit I”)
May be referred to). This monomer unit
I has a highly hydrophilic lactone ring and carboxyl group.
To provide an adhesion-imparting device that enhances the adhesion to the substrate.
Functions as a knit. In addition, alicyclic carbocycles (cyclo
(Xan ring) to increase etching resistance
It also has the function of Furthermore, the carbon substituted with a norbornene ring
Ruboxyl group (COOR 1R) which is an ester group of1To
If a group that is decomposed by acid and becomes alkali-soluble is introduced,
Will also have a desorbing function.

【0022】モノマーユニットIである式(I)に示した
1としては、メチル、エチル、プロピル、ブチル、ペ
ンチル、ヘキシル基などや置換基を含んだヒドロキシエ
チル、ヒドロキシブチル基などの置換基を含んでもよい
直鎖状炭化水素基や、i−プロピル、s−ブチル、t−
ブチル基などの分岐状炭化水素基や、シクロペンチル、
シクロヘキシル基などの脂環式炭化水素や、アダマンチ
ル、ノルボニル、トリシクロデカニル、デカヒドロナフ
チル基などの有橋脂環式炭化水素基や、2−テトラヒド
ロフラニル、2−テトラヒドロピラニル、2−オキセパ
ニル基などの複素環基などが好適である。また、R1
水素原子であると、アルカリ現像に対し、ぬれ性が改善
され、またR1が酸により脱離する基、例えばt−ブチ
ル、2−テトラヒドロフラニル、2−テトラヒドロピラ
ニル、2−オキセパニル基などは好ましい。
R 1 shown in the formula (I), which is the monomer unit I, represents a substituent such as a methyl, ethyl, propyl, butyl, pentyl, hexyl group or a substituted hydroxyethyl or hydroxybutyl group. A linear hydrocarbon group which may be contained, i-propyl, s-butyl, t-
Branched hydrocarbon groups such as butyl group, cyclopentyl,
Alicyclic hydrocarbon groups such as cyclohexyl group, bridged alicyclic hydrocarbon groups such as adamantyl, norbornyl, tricyclodecanyl, decahydronaphthyl group, 2-tetrahydrofuranyl, 2-tetrahydropyranyl, 2-oxepanyl A heterocyclic group such as a group is preferable. Further, when R 1 is a hydrogen atom, the wettability with respect to alkali development is improved, and R 1 is a group capable of leaving by an acid, for example, t-butyl, 2-tetrahydrofuranyl, 2-tetrahydropyranyl, -Oxepanyl group and the like are preferable.

【0023】式(I)の代表例として [1-1] 2−(メタ)アクリロイルオキシ−7−カ
ルボキシ−4−オキサトリシクロ[4.2.1.
3,7]ノナン−5−オン(Ra=H又はCH3、R1=カ
ルボン酸基) [1-2] 2−(メタ)アクリロイルオキシ−7−メ
トキシカルボニル−4−オキサトリシクロ[4.2.
1.03,7]ノナン−5−オン(Ra=H又はCH3、R1
=メチル基) [1-3] 2−(メタ)アクリロイルオキシ−7−エ
トキシカルボニル−4−オキサトリシクロ[4.2.
1.03,7]ノナン−5−オン(Ra=H又はCH3、R1
=エチル基) [1-4] 2−(メタ)アクリロイルオキシ−7−イ
ソプロポキシカルボニル−4−オキサトリシクロ[4.
2.1.03,7]ノナン−5−オン(Ra=H又はC
3、R1=イソプロピル基) [1-5] 2−(メタ)アクリロイルオキシ−7−t
−ブチロキシカルボニル−4−オキサトリシクロ[4.
2.1.03,7]ノナン−5−オン(Ra=H又はC
3、R1=t−ブチル基) [1-6] 2−(メタ)アクリロイルオキシ−7−
(1−メチル−1−アダマンチルエトキシ)カルボニル
−4−オキサトリシクロ[4.2.1.03,7]ノナン
−5−オン(Ra=H又はCH3、R1=1−メチル−1
−アダマンチルエチル基) [1-7] 2−(メタ)アクリロイルオキシ−7−(2−
テトラヒドロピラニルオキシ)カルボニル−4−オキサ
トリシクロ[4.2.1.03,7]ノナン−5−オン
(Ra=H又はCH3、R1=2−テトラヒドロピラニル
基) などが挙げられるが、これらに限定されるものではな
い。
As a typical example of the formula (I), [1-1] 2- (meth) acryloyloxy-7-carboxy-4-oxatricyclo [4.2.1.
0 3,7 ] nonan-5-one (R a = H or CH 3 , R 1 = carboxylic acid group) [1-2] 2- (meth) acryloyloxy-7-methoxycarbonyl-4-oxatricyclo [ 4.2.
1.0 3,7 ] nonan-5-one (R a = H or CH 3 , R 1
= Methyl group) [1-3] 2- (meth) acryloyloxy-7-ethoxycarbonyl-4-oxatricyclo [4.2.
1.0 3,7 ] nonan-5-one (R a = H or CH 3 , R 1
= Ethyl group) [1-4] 2- (meth) acryloyloxy-7-isopropoxycarbonyl-4-oxatricyclo [4.
2.1.0 3,7 ] nonan-5-one (R a = H or C
H 3 , R 1 = isopropyl group) [1-5] 2- (meth) acryloyloxy-7-t
-Butyroxycarbonyl-4-oxatricyclo [4.
2.1.0 3,7 ] nonan-5-one (R a = H or C
H 3 , R 1 = t-butyl group) [1-6] 2- (meth) acryloyloxy-7-
(1-Methyl-1-adamantylethoxy) carbonyl-4-oxatricyclo [4.2.1.0 3,7 ] nonan-5-one (R a = H or CH 3 , R 1 = 1-methyl- 1
-Adamantylethyl group) [1-7] 2- (meth) acryloyloxy-7- (2-
Tetrahydropyranyloxy) carbonyl-4-oxatricyclo [4.2.1.0 3,7] nonan-5-one (R a = H or CH 3, R 1 = 2- tetrahydropyranyl group) and the like But are not limited to these.

【0024】前記式(I)で示したモノマーの製造方法
としては、シクロペンタジエンと下記式(4)
As a method for producing the monomer represented by the above formula (I), cyclopentadiene and the following formula (4)

【0025】[0025]

【化7】 Embedded image

【0026】で示した無水マレイン酸からの誘導体とを
ディールス・アルダー反応によりノルボルネン骨格を形
成させ、その後タングステン酸等の触媒存在下、過酸化
水素によりノルボルネン骨格の2重結合をエポキシ化さ
せ、同時にエポキシ基はカルボン酸との閉環反応によ
り、下記式(5)
A norbornene skeleton is formed by the Diels-Alder reaction with the derivative from maleic anhydride shown in the above, and then the double bond of the norbornene skeleton is epoxidized with hydrogen peroxide in the presence of a catalyst such as tungstic acid. The epoxy group is formed by the following formula (5) by a ring-closing reaction with carboxylic acid.

【0027】[0027]

【化8】 Embedded image

【0028】が形成される。更に、トリエチルアミン等
の脱塩酸剤の存在下、アクリルクロリドまたはメタクリ
ルクロリドと反応させ、前記式(I)のモノマーが得ら
れる。
Is formed. Further, it is reacted with acryl chloride or methacryl chloride in the presence of a dehydrochlorinating agent such as triethylamine to obtain the monomer of the formula (I).

【0029】本発明の好ましい態様では、前記式(I)
から選択された少なくとも1種のモノマー単位と、前記
式(IIa)〜(IIg)から選択された少なくとも1種のモ
ノマー単位(繰り返し単位)(以下、「モノマーユニッ
トII」と称することがある)とを含んでいる。
In a preferred embodiment of the present invention, the above formula (I)
And at least one monomer unit (repeating unit) selected from the formulas (IIa) to (IIg) (hereinafter, may be referred to as “monomer unit II”). Contains.

【0030】モノマーユニットIIにおいて、前記式(II
a)としての代表例は、 [2-1] 1−(1−(メタ)アクリロイルオキシ−1−
メチルエチル)アダマンタン(Ra=H又はCH3、R2
=R3=CH3、R4=R5=R6=H) [2-2] 1−ヒドロキシ−3−(1−(メタ)アクリロ
イルオキシ−1−メチルエチル)アダマンタン(Ra
H又はCH3、R2=R3=CH3、R4=OH、R5=R6
=H) [2-3] 1−(1−エチル−1−(メタ)アクリロイル
オキシプロピル)アダマンタン(Ra=H又はCH3、R
2=R3=CH2CH3、R4=R5=R6=H) [2-4] 1−ヒドロキシ−3−(1−エチル−1−(メ
タ)アクリロイルオキシプロピル)アダマンタン(Ra
=H又はCH3、R2=R3=CH2CH3、R4=OH、R
5=R6=H) [2-5] 1−(1−(メタ)アクリロイルオキシ−1−
メチルプロピル)アダマンタン(Ra=H又はCH3、R
2=CH3、R3=CH2CH3、R4=R5=R6=H) [2-6] 1−ヒドロキシ−3−(1−(メタ)アクリロ
イルオキシ−1−メチルプロピル)アダマンタン(Ra
=H又はCH3、R2=CH3、R3=CH2CH3、R4
OH、R5=R6=H) [2-7] 1−(1−(メタ)アクリロイルオキシ−1,
2−ジメチルプロピル)アダマンタン(Ra=H又はC
3、R2=CH3、R3=CH(CH32、R4=R 5=R
6=H) [2-8] 1−ヒドロキシ−3−(1−(メタ)アクリロ
イルオキシ−1,2−ジメチルプロピル)アダマンタン
(Ra=H又はCH3、R2=CH3、R3=CH(CH3
2、R4=OH、R5=R6=H) [2-9] 1,3−ジヒドロキシ−5−(1−(メタ)ア
クリロイルオキシ−1−メチルエチル)アダマンタン
(Ra=H又はCH3、R2=R3=CH3、R4=R5=O
H、R6=H) [2-10] 1,3−ジヒドロキシ−5−(1−エチル−1
−(メタ)アクリロイルオキシプロピル)アダマンタン
(Ra=H又はCH3、R2=R3=CH2CH3、R 4=R5
=OH、R6=H) [2-11] 1,3−ジヒドロキシ−5−(1−(メタ)ア
クリロイルオキシ−1−メチルプロピル)アダマンタン
(Ra=H又はCH3、R2=CH3、R3=CH2CH3
4=R5=OH、R6=H) [2-12] 1,3−ジヒドロキシ−5−(1−(メタ)ア
クリロイルオキシ−1,2−ジメチルプロピル)アダマ
ンタン(Ra=H又はCH3、R2=CH3、R3=CH
(CH32、R4=R5=OH、R6=H)。
In the monomer unit II, the compound represented by the formula (II)
A typical example as a) is [2-1] 1- (1- (meth) acryloyloxy-1-
Methylethyl) adamantane (Ra= H or CHThree, RTwo
= RThree= CHThree, RFour= RFive= R6= H) [2-2] 1-hydroxy-3- (1- (meth) acryloyl
Iloxy-1-methylethyl) adamantane (Ra=
H or CHThree, RTwo= RThree= CHThree, RFour= OH, RFive= R6
= H) [2-3] 1- (1-ethyl-1- (meth) acryloyl
Oxypropyl) adamantane (Ra= H or CHThree, R
Two= RThree= CHTwoCHThree, RFour= RFive= R6= H) [2-4] 1-hydroxy-3- (1-ethyl-1- (me
TA) acryloyloxypropyl) adamantane (Ra
= H or CHThree, RTwo= RThree= CHTwoCHThree, RFour= OH, R
Five= R6= H) [2-5] 1- (1- (meth) acryloyloxy-1-)
Methylpropyl) adamantane (Ra= H or CHThree, R
Two= CHThree, RThree= CHTwoCHThree, RFour= RFive= R6= H) [2-6] 1-hydroxy-3- (1- (meth) acryloyl
Iloxy-1-methylpropyl) adamantane (Ra
= H or CHThree, RTwo= CHThree, RThree= CHTwoCHThree, RFour=
OH, RFive= R6= H) [2-7] 1- (1- (meth) acryloyloxy-1,
2-dimethylpropyl) adamantane (Ra= H or C
HThree, RTwo= CHThree, RThree= CH (CHThree)Two, RFour= R Five= R
6= H) [2-8] 1-hydroxy-3- (1- (meth) acryloyl
Yloxy-1,2-dimethylpropyl) adamantane
(Ra= H or CHThree, RTwo= CHThree, RThree= CH (CHThree)
Two, RFour= OH, RFive= R6= H) [2-9] 1,3-dihydroxy-5- (1- (meth) a
Acryloyloxy-1-methylethyl) adamantane
(Ra= H or CHThree, RTwo= RThree= CHThree, RFour= RFive= O
H, R6= H) [2-10] 1,3-dihydroxy-5- (1-ethyl-1)
-(Meth) acryloyloxypropyl) adamantane
(Ra= H or CHThree, RTwo= RThree= CHTwoCHThree, R Four= RFive
= OH, R6= H) [2-11] 1,3-dihydroxy-5- (1- (meth) a
Acryloyloxy-1-methylpropyl) adamantane
(Ra= H or CHThree, RTwo= CHThree, RThree= CHTwoCHThree,
RFour= RFive= OH, R6= H) [2-12] 1,3-dihydroxy-5- (1- (meth) a
(Cryloyloxy-1,2-dimethylpropyl) adama
Tan (Ra= H or CHThree, RTwo= CHThree, RThree= CH
(CHThree)Two, RFour= RFive= OH, R6= H).

【0031】前記式(IIb)の代表例は、 [2-13] 1−t−ブトキシカルボニル−3−(メタ)ア
クリロイルオキシアダマンタン(Ra=H又はCH3、R
7=R8=H、R9=t−ブチル基) [2-14] 1,3−ビス(t−ブトキシカルボニル)−5
−(メタ)アクリロイルオキシアダマンタン(Ra=H
又はCH3、R7=CO−O−C(CH33、R8=H、
9=t−ブチル基) [2-15] 1−t−ブトキシカルボニル−3−ヒドロキシ
−5−(メタ)アクリロイルオキシアダマンタン(Ra
=H又はCH3、R7=OH、R8=H、R9=t−ブチル
基) [2-16] 1−(2−テトラヒドロピラニルオキシカルボ
ニル)−3−(メタ)アクリロイルオキシアダマンタン
(Ra=H又はCH3、R7=R8=H、R9=2−テトラ
ヒドロピラニル基) [2-17] 1,3−ビス(2−テトラヒドロピラニルオキ
シカルボニル)−5−(メタ)アクリロイルオキシアダ
マンタン(Ra=H又はCH3、R7=2−テトラヒドロ
ピラニルオキシカルボニル基、R8=H、R9=2−テト
ラヒドロピラニル基) [2-18] 1−(2−テトラヒドロピラニルオキシカルボ
ニル)−3−ヒドロキシ−5−(メタ)アクリロイルオ
キシアダマンタン(Ra=H又はCH3、R7=OH、R8
=H、R9=2−テトラヒドロピラニル基)。
A typical example of the above formula (IIb) is [2-13] 1-t-butoxycarbonyl-3- (meth) acryloyloxyadamantane (R a = H or CH 3 , R
7 = R 8 = H, R 9 = t- butyl group) [2-14] 1,3-bis (t-butoxycarbonyl) -5
-(Meth) acryloyloxyadamantane ( Ra = H
Or CH 3, R 7 = CO- O-C (CH 3) 3, R 8 = H,
R 9 = t-butyl group) [2-15] 1-t-butoxycarbonyl-3-hydroxy-5- (meth) acryloyloxyadamantane ( Ra
= H or CH 3, R 7 = OH, R 8 = H, R 9 = t- butyl group) [2-16] 1- (2-tetrahydropyranyloxy) -3- (meth) acryloyloxy adamantane ( R a = H or CH 3 , R 7 = R 8 = H, R 9 = 2-tetrahydropyranyl group) [2-17] 1,3-bis (2-tetrahydropyranyloxycarbonyl) -5- (meta ) acryloyloxyadamantane (R a = H or CH 3, R 7 = 2- tetrahydropyranyloxy group, R 8 = H, R 9 = 2- tetrahydropyranyl group) [2-18] 1- (2- tetrahydropyranyloxy carbonyl) -3-hydroxy-5- (meth) acryloyloxy adamantane (R a = H or CH 3, R 7 = OH, R 8
= H, R 9 = 2-tetrahydropyranyl group).

【0032】前記式(IIc)の代表例は、 [2-19] 2−(メタ)アクリロイルオキシ−2−メチル
アダマンタン(Ra=H又はCH3、R10=CH3、R11
=R12=H) [2-20] 1−ヒドロキシ−2−(メタ)アクリロイルオ
キシ−2−メチルアダマンタン(Ra=H又はCH3、R
10=CH3、R11=1−OH、R12=H) [2-21] 5−ヒドロキシ−2−(メタ)アクリロイルオ
キシ−2−メチルアダマンタン(Ra=H又はCH3、R
10=CH3、R11=5−OH、R12=H) [2-22] 1,3−ジヒドロキシ−2−(メタ)アクリロ
イルオキシ−2−メチルアダマンタン(Ra=H又はC
3、R10=CH3、R11=1−OH、R12=3−OH) [2-23] 1,5−ジヒドロキシ−2−(メタ)アクリロ
イルオキシ−2−メチルアダマンタン(Ra=H又はC
3、R10=CH3、R11=1−OH、R12=5−OH) [2-24] 1,3−ジヒドロキシ−6−(メタ)アクリロ
イルオキシ−6−メチルアダマンタン(Ra=H又はC
3、R10=CH3、R11=1−OH、R12=3−OH) [2-25] 2−(メタ)アクリロイルオキシ−2−エチル
アダマンタン(Ra=H又はCH3、R10=CH2CH3
11=R12=H) [2-26] 1−ヒドロキシ−2−(メタ)アクリロイルオ
キシ−2−エチルアダマンタン(Ra=H又はCH3、R
10=CH2CH3、R11=1−OH、R12=H) [2-27] 5−ヒドロキシ−2−(メタ)アクリロイルオ
キシ−2−エチルアダマンタン(Ra=H又はCH3、R
10=CH2CH3、R11=5−OH、R12=H) [2-28] 1,3−ジヒドロキシ−2−(メタ)アクリロ
イルオキシ−2−エチルアダマンタン(Ra=H又はC
3、R10=CH2CH3、R11=1−OH、R12=3−
OH) [2-29] 1,5−ジヒドロキシ−2−(メタ)アクリロ
イルオキシ−2−エチルアダマンタン(Ra=H又はC
3、R10=CH2CH3、R11=1−OH、R12=5−
OH) [2-30] 1,3−ジヒドロキシ−6−(メタ)アクリロ
イルオキシ−6−エチルアダマンタン(Ra=H又はC
3、R10=CH2CH3、R11=1−OH、R12=3−
OH)。
A typical example of the above formula (IIc) is [2-19] 2- (meth) acryloyloxy-2-methyladamantane (R a = H or CH 3 , R 10 = CH 3 , R 11
= R 12 = H) [2-20] 1-hydroxy-2- (meth) acryloyloxy-2-methyladamantane (R a = H or CH 3 , R
10 = CH 3 , R 11 = 1-OH, R 12 = H) [2-21] 5-hydroxy-2- (meth) acryloyloxy-2-methyladamantane ( Ra = H or CH 3 , R
10 = CH 3 , R 11 = 5-OH, R 12 = H) [2-22] 1,3-dihydroxy-2- (meth) acryloyloxy-2-methyladamantane ( Ra = H or C
H 3, R 10 = CH 3 , R 11 = 1-OH, R 12 = 3-OH) [2-23] 1,5- dihydroxy-2- (meth) acryloyloxy-2-methyl-adamantane (R a = H or C
H 3, R 10 = CH 3 , R 11 = 1-OH, R 12 = 5-OH) [2-24] 1,3- dihydroxy-6 (meth) acryloyloxy-6-methyl-adamantane (R a = H or C
H 3, R 10 = CH 3 , R 11 = 1-OH, R 12 = 3-OH) [2-25] 2- ( meth) acryloyloxy-2-ethyl adamantane (R a = H or CH 3, R 10 = CH 2 CH 3 ,
R 11 = R 12 = H) [2-26] 1-hydroxy-2- (meth) acryloyloxy-2-ethyladamantane (R a = H or CH 3 , R
10 = CH 2 CH 3, R 11 = 1-OH, R 12 = H) [2-27] 5- hydroxy-2- (meth) acryloyloxy-2-ethyl adamantane (R a = H or CH 3, R
10 = CH 2 CH 3, R 11 = 5-OH, R 12 = H) [2-28] 1,3- dihydroxy-2- (meth) acryloyloxy-2-ethyl adamantane (R a = H or C
H 3, R 10 = CH 2 CH 3, R 11 = 1-OH, R 12 = 3-
OH) [2-29] 1,5-dihydroxy-2- (meth) acryloyloxy-2-ethyladamantane (R a = H or C
H 3, R 10 = CH 2 CH 3, R 11 = 1-OH, R 12 = 5-
OH) [2-30] 1,3-dihydroxy-6- (meth) acryloyloxy-6-ethyladamantane ( Ra = H or C
H 3, R 10 = CH 2 CH 3, R 11 = 1-OH, R 12 = 3-
OH).

【0033】前記式(IId)の代表例は、 [2-31] t−ブチル(メタ)アクリレート(Ra=H又
はCH3、R13=t−ブチル基)。
A typical example of the above formula (IId) is [2-31] t-butyl (meth) acrylate (R a = H or CH 3 , R 13 = t-butyl group).

【0034】前記式(IIe)の代表例は、 [2-32] 2−テトラヒドロピラニル(メタ)アクリレー
ト(Ra=H又はCH3、m=2) [2-33] 2−テトラヒドロフラニル(メタ)アクリレー
ト(Ra=H又はCH3、m=1)。
A typical example of the above formula (IIe) is [2-32] 2-tetrahydropyranyl (meth) acrylate (R a = H or CH 3 , m = 2) [2-33] 2-tetrahydrofuranyl ( (Meth) acrylate (R a = H or CH 3 , m = 1).

【0035】前記式(IIf)の代表例は、 [2-34] β−(メタ)アクリロイルオキシ−γ―ブチロ
ラクトン(Ra=H又はCH3、R14=R15=R16=R17
=R18=H) [2-35] β−(メタ)アクリロイルオキシ−α,α―ジ
メチル−γ―ブチロラクトン(Ra=H又はCH3、R14
=R15=CH3、R16=R17=R18=H) [2-36] β−(メタ)アクリロイルオキシ−γ,γ―ジ
メチル−γ―ブチロラクトン(Ra=H又はCH3、R17
=R18=CH3、R14=R15=R16=H) [2-37] β−(メタ)アクリロイルオキシ−α,α,β
―トリメチル−γ―ブチロラクトン(Ra=H又はC
3、R14=R15=R16=CH3、R17=R18=H) [2-38] β−(メタ)アクリロイルオキシ−β,γ,γ
―トリメチル−γ―ブチロラクトン(Ra=H又はC
3、R16=R17=R18=CH3、R14=R15=H) [2-39] β−(メタ)アクリロイルオキシ−α,α,
β,γ,γ―ペンタメチル−γ―ブチロラクトン(Ra
=H又はCH3、R14=R15=R16=R17=R18=C
3)。
A typical example of the above formula (IIf) is [2-34] β- (meth) acryloyloxy-γ-butyrolactone (R a = H or CH 3 , R 14 = R 15 = R 16 = R 17
= R 18 = H) [2-35] β- (meth) acryloyloxy-α, α-dimethyl-γ-butyrolactone (R a = H or CH 3 , R 14
= R 15 = CH 3 , R 16 = R 17 = R 18 = H) [2-36] β- (meth) acryloyloxy-γ, γ-dimethyl-γ-butyrolactone (R a = H or CH 3 , R 17
= R 18 = CH 3 , R 14 = R 15 = R 16 = H) [2-37] β- (meth) acryloyloxy-α, α, β
-Trimethyl-γ-butyrolactone (R a = H or C
H 3, R 14 = R 15 = R 16 = CH 3, R 17 = R 18 = H) [2-38] β- ( meth) acryloyloxy-beta, gamma, gamma
-Trimethyl-γ-butyrolactone (R a = H or C
H 3, R 16 = R 17 = R 18 = CH 3, R 14 = R 15 = H) [2-39] β- ( meth) acryloyloxy-.alpha., alpha,
β, γ, γ-pentamethyl-γ-butyrolactone ( Ra
= H or CH 3 , R 14 = R 15 = R 16 = R 17 = R 18 = C
H 3).

【0036】前記式(IIg)の代表例は、 [2-40] 5−t−ブトキシカルボニルノルボルネン(R
19=t−ブチル基、n=0) [2-41] 9−t−ブトキシカルボニルテトラシクロ
[6.2.1.13,6.02,7]ドデカ−4−エン(R19
=t−ブチル基、n=1) [2-42] 5−(2−テトラヒドロピラニルオキシカルボ
ニル)ノルボルネン(R 19=t−ブチル基、n=0) などが、挙げられるがこれらに限定されるものではな
い。
A typical example of the above formula (IIg) is [2-40] 5-t-butoxycarbonylnorbornene (R
19= T-butyl group, n = 0) [2-41] 9-t-butoxycarbonyltetracyclo
[6.2.1.13,6. 02,7] Dodeca-4-ene (R19
= T-butyl group, n = 1) [2-42] 5- (2-tetrahydropyranyloxycarbo)
Nyl) norbornene (R 19= T-butyl group, n = 0) and the like, but are not limited thereto.
No.

【0037】本発明のフォトレジスト用高分子化合物
は、上記モノマーユニットI、又はモノマーユニットI及
びIIに加えて、前記式(IIIa)〜(IIIh)で表されるモ
ノマー単位から選択された少なくとも1種のモノマー単
位(繰り返し単位)(以下、「モノマーユニットIII」
と称することがある)を含んでいてもよい。
The polymer compound for a photoresist of the present invention comprises, in addition to the monomer unit I, or the monomer units I and II, at least one selected from the monomer units represented by the formulas (IIIa) to (IIIh). Species of monomer unit (repeating unit) (hereinafter referred to as “monomer unit III”)
May be included).

【0038】前記式(IIIa)の代表例として、 [3-1] 1−ヒドロキシ−3−(メタ)アクリロイルオ
キシアダマンタン(Ra=H又はCH3、R20=OH、R
21=R22=H) [3-2] 1,3−ジヒドロキシ−5−(メタ)アクリロ
イルオキシアダマンタン(Ra=H又はCH3、R20=R
21=OH、R22=H) [3-3] 1−カルボキシ−3−(メタ)アクリロイルオ
キシアダマンタン(Ra=H又はCH3、R20=COO
H、R21=R22=H) [3-4] 1,3−ジカルボキシ−5−(メタ)アクリロ
イルオキシアダマンタン(Ra=H又はCH3、R20=R
21=COOH、R22=H) [3-5] 1−カルボキシ−3−ヒドロキシ−5−(メ
タ)アクリロイルオキシアダマンタン(Ra=H又はC
3、R20=COOH、R21=OH、R22=H) [3-6] 1−(メタ)アクリロイルオキシ−4−オキソ
アダマンタン(Ra=H又はCH3、R20=R21=H、R
22=4−オキソ基) [3-7] 3−ヒドロキシ−1−(メタ)アクリロイルオ
キシ−4−オキソアダマンタン(Ra=H又はCH3、R
20=3−OH、R21=H、R22=4−オキソ基) [3-8] 7−ヒドロキシ−1−(メタ)アクリロイルオ
キシ−4−オキソアダマンタン(Ra=H又はCH3、R
20=7−OH、R21=H、R22=4−オキソ基)。
As a typical example of the above formula (IIIa), [3-1] 1-hydroxy-3- (meth) acryloyloxyadamantane (R a = H or CH 3 , R 20 = OH, R
21 = R 22 = H) [ 3-2] 1,3- dihydroxy-5- (meth) acryloyloxy adamantane (R a = H or CH 3, R 20 = R
21 = OH, R 22 = H ) [3-3] 1- carboxy-3- (meth) acryloyloxy adamantane (R a = H or CH 3, R 20 = COO
H, R 21 = R 22 = H) [3-4] 1,3-dicarboxy-5- (meth) acryloyloxyadamantane (R a = H or CH 3 , R 20 = R
21 = COOH, R 22 = H ) [3-5] 1- carboxy-3-hydroxy-5- (meth) acryloyloxy adamantane (R a = H or C
H 3, R 20 = COOH, R 21 = OH, R 22 = H) [3-6] 1- ( meth) acryloyloxy-4-oxo-adamantane (R a = H or CH 3, R 20 = R 21 = H, R
22 = 4-oxo group) [3-7] 3-hydroxy-1- (meth) acryloyloxy-4-oxoadamantane (R a = H or CH 3 , R
20 = 3-OH, R 21 = H, R 22 = 4- oxo group) [3-8] 7-hydroxy-1- (meth) acryloyloxy-4-oxo-adamantane (R a = H or CH 3, R
20 = 7-OH, R 21 = H, R 22 = 4-oxo group).

【0039】前記式(IIIb)の代表例として、 [3-9] 1−(メタ)アクリロイルオキシ−4−オキサ
トリシクロ[4.3.1.13,8]ウンデカン−5−オ
ン(Ra=H又はCH3、R23=R24=R25=H、X1
3=−CH2−、X2=―CO−O−(左側がR41の結
合している炭素原子側)) [3-10] 1−(メタ)アクリロイルオキシ−4,7−ジ
オキサトリシクロ[4.4.1.13,9]ドデカン−
5,8−ジオン(Ra=H又はCH3、R23=R24=R25
=H、X1=−CO−O−(左側がR23の結合している
炭素原子側)、X2=−CO−O−(左側がR24の結合
している炭素原子側)、X3=−CH2−) [3-11] 1−(メタ)アクリロイルオキシ−4,8−ジ
オキサトリシクロ[4.4.1.13,9]ドデカン−
5,7−ジオン(Ra=H又はCH3、R23=R24=R25
=H、X1=―O−CO−(左側がR23の結合している
炭素原子側)、X2=−CO−O−(左側がR24の結合
している炭素原子側)、X3=−CH2−) [3-12] 1−(メタ)アクリロイルオキシ−5,7−ジ
オキサトリシクロ[4.4.1.13,9]ドデカン−
4,8−ジオン(Ra=H又はCH3、R23=R24=R25
=H、X1=―CO−O−(左側がR23の結合している
炭素原子側)、X2=−O−CO−(左側がR24の結合
している炭素原子側)、X3=−CH2−)。
As a typical example of the above formula (IIIb), [3-9] 1- (meth) acryloyloxy-4-oxatricyclo [4.3.1.1 3,8 ] undecane-5-one (R a = H or CH 3 , R 23 = R 24 = R 25 = H, X 1 =
X 3 = —CH 2 —, X 2 = —CO—O— (the left side is the side of the carbon atom to which R 41 is bonded) [3-10] 1- (meth) acryloyloxy-4,7-dioxa Tricyclo [4.4.1.1 3,9 ] dodecane-
5,8-dione (R a = H or CH 3, R 23 = R 24 = R 25
= H, X 1 = -CO- O- ( left bonded to the carbon atom side of the R 23), X 2 = -CO -O- ( carbon atoms side the left is bonded to R 24), X 3 = -CH 2 -) [3-11 ] 1- ( meth) acryloyloxy-4,8-dioxatricyclo [4.4.1.1 3, 9] dodecane -
5,7-dione (R a = H or CH 3, R 23 = R 24 = R 25
= H, X 1 = —O—CO— (the left side is the carbon atom side to which R 23 is bonded), X 2 = —CO—O— (the left side is the carbon atom side to which R 24 is bonded), X 3 = -CH 2 -) [3-12 ] 1- ( meth) acryloyloxy-5,7-dioxatricyclo [4.4.1.1 3, 9] dodecane -
4,8-dione (R a = H or CH 3, R 23 = R 24 = R 25
= H, X 1 = —CO—O— (the left side is the carbon atom side to which R 23 is bonded), X 2 = —O—CO— (the left side is the carbon atom side to which R 24 is bonded), X 3 = -CH 2 -).

【0040】前記式(IIIc)の代表例として、 [3-13] 2−(メタ)アクリロイルオキシ−4−オキサ
トリシクロ[4.2.1.03,7]ノナン−5−オン
(Ra=H又はCH3、R26=R27=H) [3-14] 2−(メタ)アクリロイルオキシ−2−メチル
−4−オキサトリシクロ[4.2.1.03,7]ノナン
−5−オン(Ra=H又はCH3、R26=CH3、R 27
H)。
As a typical example of the above formula (IIIc), [3-13] 2- (meth) acryloyloxy-4-oxa
Tricyclo [4.2.1.03,7Nonan-5-one
(Ra= H or CHThree, R26= R27= H) [3-14] 2- (meth) acryloyloxy-2-methyl
-4-oxatricyclo [4.2.1.03,7] Nonan
-5-one (Ra= H or CHThree, R26= CHThree, R 27=
H).

【0041】前記式(IIId)の代表例として、 [3-15] α−(メタ)アクリロイルオキシ−γ―ブチロ
ラクトン(Ra=H又はCH3、R28=R29=R30=R31
=R32=H) [3-16] α−(メタ)アクリロイルオキシ−α−メチル
−γ―ブチロラクトン(Ra=H又はCH3、R28=CH
3、R29=R30=R31=R32=H) [3-17] α−(メタ)アクリロイルオキシ−β,β−ジ
メチル−γ―ブチロラクトン(Ra=H又はCH3、R29
=R30=CH3、R28=R31=R32=H) [3-18] α−(メタ)アクリロイルオキシ−α,β,β
−トリメチル−γ―ブチロラクトン(Ra=H又はC
3、R28=R29=R30=CH3、R31=R32=H) [3-19] α−(メタ)アクリロイルオキシ−γ,γ−ジ
メチル−γ―ブチロラクトン(Ra=H又はCH3、R31
=R32=CH3、R28=R29=R30=H) [3-20] α−(メタ)アクリロイルオキシ−α,γ,γ
−トリメチル−γ―ブチロラクトン(Ra=H又はC
3、R28=R31=R32=CH3、R29=R30=H) [3-21] α−(メタ)アクリロイルオキシ−β,β,
γ,γ−テトラメチル−γ―ブチロラクトン(Ra=H
又はCH3、R29=R30=R31=R32=CH3、R28
H) [3-22] α−(メタ)アクリロイルオキシ−α,β,
β,γ,γ−ペンタメチル−γ―ブチロラクトン(Ra
=H又はCH3、R28=R29=R30=R31=R32=C
3)。
As a typical example of the above formula (IIId), [3-15] α- (meth) acryloyloxy-γ-butyrolactone (R a = H or CH 3 , R 28 = R 29 = R 30 = R 31
= R 32 = H) [3-16] α- (meth) acryloyloxy-α-methyl-γ-butyrolactone (R a = H or CH 3 , R 28 = CH
3 , R 29 = R 30 = R 31 = R 32 = H) [3-17] α- (meth) acryloyloxy-β, β-dimethyl-γ-butyrolactone (R a = H or CH 3 , R 29
= R 30 = CH 3 , R 28 = R 31 = R 32 = H) [3-18] α- (meth) acryloyloxy-α, β, β
-Trimethyl-γ-butyrolactone (R a = H or C
H 3 , R 28 = R 29 = R 30 = CH 3 , R 31 = R 32 = H) [3-19] α- (meth) acryloyloxy-γ, γ-dimethyl-γ-butyrolactone (R a = H Or CH 3 , R 31
= R 32 = CH 3 , R 28 = R 29 = R 30 = H) [3-20] α- (meth) acryloyloxy-α, γ, γ
-Trimethyl-γ-butyrolactone (R a = H or C
H 3, R 28 = R 31 = R 32 = CH 3, R 29 = R 30 = H) [3-21] α- ( meth) acryloyloxy-beta, beta,
γ, γ-tetramethyl-γ-butyrolactone (R a = H
Or CH 3 , R 29 = R 30 = R 31 = R 32 = CH 3 , R 28 =
H) [3-22] α- (meth) acryloyloxy-α, β,
β, γ, γ-pentamethyl-γ-butyrolactone ( Ra
= H or CH 3 , R 28 = R 29 = R 30 = R 31 = R 32 = C
H 3).

【0042】前記式(IIIe)の代表例として、 [3-23] (メタ)アクリル酸(Ra=H又はCH3、R33
=H) [3-24] (メタ)アクリル酸メチル(Ra=H又はC
3、R33=メチル基) [3-25] (メタ)アクリル酸エチル(Ra=H又はC
3、R33=エチル基) [3-26] (メタ)アクリル酸イソプロピル(Ra=H又
はCH3、R33=イソプロピル基) [3-27] (メタ)アクリル酸n−ブチル(Ra=H又は
CH3、R33=n−ブチル基) [3-28] (メタ)アクリル酸シクロヘキシル(Ra=H
又はCH3、R33=シクロヘキシル基) [3-29] (メタ)アクリル酸デカヒドロナフチル(Ra
=H又はCH3、R33=デカヒドロナフチル基) [3-29] (メタ)アクリル酸ノルボルニル(Ra=H又
はCH3、R33=ノルボルニル基) [3-30] (メタ)アクリル酸イソボルニル(Ra=H又
はCH3、R33=イソボルニル基) [3-31] (メタ)アクリル酸アダマンチル(Ra=H又
はCH3、R33=アダマンチル基) [3-32] (メタ)アクリル酸ジメチルアダマンチル(R
a=H又はCH3、R33=ジメチルアダマンチル基) [3-33] (メタ)アクリル酸トリシクロ[5.2.1.
2,6]デシル(Ra=H又はCH3、R33=トリシクロ
[5.2.1.02,6]デシル基) [3-34] (メタ)アクリル酸テトラシクロ[4.4.
0.12,5.17,10]ドデシル(Ra=H又はCH3、R
33=テトラシクロ[4.4.0.12,5.17,10]ドデ
シル基) R33の置換基としては、ヒドロキシル基、ヒドロキシメ
チル基、カルボキシル基、オキソ基などが挙げられる。
As a representative example of the above formula (IIIe), [3-23] (meth) acrylic acid (R a = H or CH 3 , R 33
= H) [3-24] Methyl (meth) acrylate (R a = H or C
H 3 , R 33 = methyl group) [3-25] Ethyl (meth) acrylate (R a = H or C
H 3 , R 33 = ethyl group) [3-26] Isopropyl (meth) acrylate (R a = H or CH 3 , R 33 = isopropyl group) [3-27] n-butyl (meth) acrylate (R a = H or CH 3 , R 33 = n-butyl group) [3-28] Cyclohexyl (meth) acrylate (R a = H
Or CH 3 , R 33 = cyclohexyl group) [3-29] Decahydronaphthyl (meth) acrylate (R a
= H or CH 3 , R 33 = decahydronaphthyl group) [3-29] norbornyl (meth) acrylate (R a = H or CH 3 , R 33 = norbornyl group) [3-30] (meth) acrylic acid Isobornyl (R a = H or CH 3 , R 33 = isobornyl group) [3-31] Adamantyl (meth) acrylate (R a = H or CH 3 , R 33 = adamantyl group) [3-32] (meth) Dimethyl adamantyl acrylate (R
a = H or CH 3 , R 33 = dimethyladamantyl group) [3-33] Tricyclo (meth) acrylate [5.2.1.
0 2,6 ] decyl (R a = H or CH 3 , R 33 = tricyclo [5.2.1.0 2,6 ] decyl group) [3-34] Tetracyclo (meth) acrylate [4.4.
0.1 2,5 . 1 7,10 ] dodecyl (R a = H or CH 3 , R
33 = tetracyclo [4.4.0.1 2,5 . The 1 7,10] substituent dodecyl) R 33, hydroxyl group, a hydroxymethyl group, a carboxyl group, such as an oxo group.

【0043】前記式(IIIf)の代表例として、 [3-35] 無水マレイン酸。[3-35] Maleic anhydride is a typical example of the above formula (IIIf).

【0044】前記式(IIIg)の代表例として、 [3-36] 4−オキサトリシクロ[35.1.02,6]デ
カン−8−エン−5−オン(R36=R37=H、o=p=
0、q=1) [3-37] 3−オキサトリシクロ[35.1.02,6]デ
カン−8−エン−4−オン(R34=R35=H、o=q=
0、p=1) [3-38] 5−オキサトリシクロ[6.2.1.02,7
ウンデカン−9−エン−6−オン(R36=R37=H、o
=p=0、q=2) [3-39] 4−オキサトリシクロ[6.2.1.02,7
ウンデカン−9−エン−5−オン(R34=R35=R36
37=H、o=0、p=q=1) [3-40] 4−オキサペンタシクロ[6.34.19,12
2,6.08,13]ペンタデカン−10−エン−5−オン
(R36=R37=H、o=1、p=0、q=1) [3-41] 3−オキサペンタシクロ[6.34.19,12
2,6.08,13]ペンタデカン−10−エン−4−オン
(R34=R35=H、o=1、p=1、q=0) [3-42] 5−オキサペンタシクロ[6.6.1.1
10,13.02,7.09,14]ヘキサデカン−11−エン−6
−オン(R36=R37=H、o=1、p=0、q=2) [3-43] 4−オキサペンタシクロ[6.6.1.1
10,13.02,7.09,14]ヘキサデカン−11−エン−5
−オン(R34=R35=R36=R37=H、o=1、p=q
=1)。
As a representative example of the above formula (IIIg), [3-36] 4-oxatricyclo [35.1.0 2,6 ] decane-8-en-5-one (R 36 = R 37 = H , O = p =
0, q = 1) [3-37] 3-oxatricyclo [35.1.0 2,6 ] decane-8-en-4-one (R 34 = R 35 = H, o = q =
0, p = 1) [3-38] 5-oxatricyclo [6.2.1.0 2,7 ]
Undecane-9-en-6-one (R 36 = R 37 = H , o
= P = 0, q = 2) [3-39] 4-oxatricyclo [6.2.1.0 2,7 ]
Undecane-9-en-5-one (R 34 = R 35 = R 36 =
R 37 = H, o = 0, p = q = 1) [3-40] 4-oxapentacyclo [6.34.1 9,12 .
0 2,6 . 0 8,13] pentadecane-10-ene-5-one (R 36 = R 37 = H , o = 1, p = 0, q = 1) [3-41] 3- oxa penta cyclo [6.34. 19,12 .
0 2,6 . 0 8,13 ] pentadecane-10-en-4-one (R 34 = R 35 = H, o = 1, p = 1, q = 0) [3-42] 5-oxapentacyclo [6.6. 1.1
10,13 . 0 2,7 . 0 9,14 ] hexadecane-11-ene-6
-One (R 36 = R 37 = H, o = 1, p = 0, q = 2) [3-43] 4-oxapentacyclo [6.6.1.1
10,13 . 0 2,7 . 0 9,14 ] hexadecane-11-ene-5
- one (R 34 = R 35 = R 36 = R 37 = H, o = 1, p = q
= 1).

【0045】前記式(IIIh)の代表例として、 [3-44] ノルボルネン(R38=H、r=0) [3-45] 5−ヒドロキシ−2−ノルボルネン(R38=O
H、r=0)。
As a typical example of the above formula (IIIh), [3-44] norbornene (R 38 HH, r = 0) [3-45] 5-hydroxy-2-norbornene (R 38 OO
H, r = 0).

【0046】前記式(IIIi)の代表例として、 [3-46] 4−(メタ)アクリロイルオキシ−6−オキサ
ビシクロ[3.2.1]オクタン−7−オン(Ra=H
又はCH3、R39=R40=R41=R42=R43=R44=R
45=R46=R47=H) [3-47] 4−(メタ)アクリロイルオキシ−4−メチル
−6−オキサビシクロ[3.2.1]オクタン−7−オ
ン(Ra=H又はCH3、R39=R40=R42=R43=R44
=R45=R46=R47=H、R41=CH3) [3-48] 4−(メタ)アクリロイルオキシ−5−メチル
−6−オキサビシクロ[3.2.1]オクタン−7−オ
ン(Ra=H又はCH3、R39=R40=R41=R43=R44
=R45=R46=R47=H、R42=CH3) [3-49] 4−(メタ)アクリロイルオキシ−4,5−ジ
メチル−6−オキサビシクロ[3.2.1]オクタン−
7−オン(Ra=H又はCH3、R39=R40=R43=R44
=R45=R46=R47=H、R41=R42=CH3)。
As a representative example of the above formula (IIIi), [3-46] 4- (meth) acryloyloxy-6-oxabicyclo [3.2.1] octan-7-one (R a = H
Or CH 3 , R 39 = R 40 = R 41 = R 42 = R 43 = R 44 = R
45 = R 46 = R 47 = H) [3-47] 4- (meth) acryloyloxy-4-methyl-6-oxabicyclo [3.2.1] octan-7-one ( Ra = H or CH 3 , R 39 = R 40 = R 42 = R 43 = R 44
= R 45 = R 46 = R 47 = H, R 41 = CH 3) [3-48] 4- ( meth) acryloyloxy-5-methyl-6-oxabicyclo [3.2.1] octane-7 on (R a = H or CH 3, R 39 = R 40 = R 41 = R 43 = R 44
= R 45 = R 46 = R 47 = H, R 42 = CH 3) [3-49] 4- ( meth) acryloyloxy-4,5-dimethyl-6-oxabicyclo [3.2.1] octane -
7- ON (R a = H or CH 3, R 39 = R 40 = R 43 = R 44
= R 45 = R 46 = R 47 = H, R 41 = R 42 = CH 3 ).

【0047】前記式(IIIj)の代表例として、 [3-50] 6−(メタ)アクリロイルオキシ−2−オキサ
ビシクロ[2.2.2]オクタン−3−オン(Ra=H
又はCH3、R48=R49=R50=R51=R52=R53=R
54=R55=R56=H) [3-51] 6−(メタ)アクリロイルオキシ−6−メチル
−2−オキサビシクロ[2.2.2]オクタン−3−オ
ン(Ra=H又はCH3、R48=R49=R50=R52=R53
=R54=R55=R56=H、R51=CH3) [3-52] 6−(メタ)アクリロイルオキシ−1−メチル
−2−オキサビシクロ[2.2.2]オクタン−3−オ
ン(Ra=H又はCH3、R48=R49=R51=R52=R53
=R54=R55=R56=H、R50=CH3) [3-53] 6−(メタ)アクリロイルオキシ−1,6−ジ
メチル−2−オキサビシクロ[2.2.2]オクタン−
3−オン(Ra=H又はCH3、R48=R49=R52=R53
=R54=R55=R56=H、R50=R51=CH3) などが挙げられるが、これらに特に限定されるものでは
ない。
As a typical example of the above formula (IIIj), [3-50] 6- (meth) acryloyloxy-2-oxabicyclo [2.2.2] octan-3-one (R a = H
Or CH 3 , R 48 = R 49 = R 50 = R 51 = R 52 = R 53 = R
54 = R 55 = R 56 = H) [3-51] 6- (meth) acryloyloxy-6-methyl-2-oxabicyclo [2.2.2] octan-3-one ( Ra = H or CH 3, R 48 = R 49 = R 50 = R 52 = R 53
= R 54 = R 55 = R 56 = H, R 51 = CH 3 ) [3-52] 6- (Meth) acryloyloxy-1-methyl-2-oxabicyclo [2.2.2] octane-3- on (R a = H or CH 3, R 48 = R 49 = R 51 = R 52 = R 53
= R 54 = R 55 = R 56 = H, R 50 = CH 3) [3-53] 6- ( meth) acryloyloxy-1,6-dimethyl-2-oxabicyclo [2.2.2] octane -
3-one (R a = H or CH 3, R 48 = R 49 = R 52 = R 53
= R 54 = R 55 = R 56 = H, R 50 = R 51 = CH 3 ) and the like, but are not particularly limited thereto.

【0048】本発明のフォトレジスト用樹脂組成物は、
前記本発明のフォトレジスト用高分子化合物と光酸発生
剤とを含んでいる。
The photoresist resin composition of the present invention comprises
It contains the polymer compound for photoresist of the present invention and a photoacid generator.

【0049】光酸発生剤としては、露光により効率よく
酸を生成する慣用乃至公知の化合物、例えば、ジアゾニ
ウム塩、ヨードニウム塩(例えば、ジフェニルヨードヘ
キサフルオロホスフェートなど)、スルホニウム塩(例
えば、トリフェニルスルホニウムヘキサフルオロアンチ
モネート、トリフェニルスルホニウムヘキサフルオロホ
スフェート、トリフェニルスルホニウムメタンスルホネ
ートなど)、スルホン酸エステル[例えば、1−フェニ
ル−1−(4−メチルフェニル)スルホニルオキシ−1
−ベンゾイルメタン、1,2,3−トリスルホニルオキ
シメチルベンゼン、1,3−ジニトロ−2−(4−フェ
ニルスルホニルオキシメチル)ベンゼン、1−フェニル
−1−(4−メチルフェニルスルホニルオキシメチル)
−1−ヒドロキシ−1−ベンゾイルメタンなど]、オキ
サチアゾール誘導体、s−トリアジン誘導体、ジスルホ
ン誘導体(ジフェニルジスルホンなど)、イミド化合
物、オキシムスルホネート、ジアゾナフトキノン、ベン
ゾイントシレートなどを使用できる。これらの光酸発生
剤は単独で又は2種以上組み合わせて使用できる。
Examples of the photoacid generator include conventional or known compounds which efficiently generate an acid upon exposure to light, such as diazonium salts, iodonium salts (eg, diphenyliodohexafluorophosphate), and sulfonium salts (eg, triphenylsulfonium). Hexafluoroantimonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium methanesulfonate, etc.), sulfonic acid ester [for example, 1-phenyl-1- (4-methylphenyl) sulfonyloxy-1
-Benzoylmethane, 1,2,3-trisulfonyloxymethylbenzene, 1,3-dinitro-2- (4-phenylsulfonyloxymethyl) benzene, 1-phenyl-1- (4-methylphenylsulfonyloxymethyl)
-1-hydroxy-1-benzoylmethane, etc.], oxathiazole derivatives, s-triazine derivatives, disulfone derivatives (eg, diphenyldisulfone), imide compounds, oxime sulfonates, diazonaphthoquinone, benzoin tosylate, and the like. These photoacid generators can be used alone or in combination of two or more.

【0050】光酸発生剤の使用量は、光照射により生成
する酸の強度や前記高分子化合物における各モノマー単
位の比率などに応じて適宜選択でき、例えば、前記高分
子化合物100重量部に対して0.1〜30重量部、好
ましくは1〜25重量部、さらに好ましくは2〜20重
量部程度の範囲から選択できる。
The amount of the photoacid generator used can be appropriately selected according to the strength of the acid generated by light irradiation, the ratio of each monomer unit in the polymer compound, and the like. For example, based on 100 parts by weight of the polymer compound 0.1 to 30 parts by weight, preferably 1 to 25 parts by weight, more preferably about 2 to 20 parts by weight.

【0051】フォトレジスト用樹脂組成物は、アルカリ
可溶性樹脂(例えば、ノボラック樹脂、フェノール樹
脂、イミド樹脂、カルボキシル基含有樹脂など)などの
アルカリ可溶成分、着色剤(例えば、染料など)、有機
溶媒(例えば、炭化水素類、ハロゲン化炭化水素類、ア
ルコール類、エステル類、アミド類、ケトン類、エーテ
ル類、セロソルブ類、カルビトール類、グリコールエー
テルエステル類、これらの混合溶媒など)などを含んで
いてもよい。
The resin composition for a photoresist includes an alkali-soluble component such as an alkali-soluble resin (eg, a novolak resin, a phenol resin, an imide resin, and a carboxyl group-containing resin), a coloring agent (eg, a dye), and an organic solvent. (Eg, hydrocarbons, halogenated hydrocarbons, alcohols, esters, amides, ketones, ethers, cellosolves, carbitols, glycol ether esters, mixed solvents thereof, and the like). May be.

【0052】このフォトレジスト用樹脂組成物を基材又
は基板上に塗布し、乾燥した後、所定のマスクを介し
て、塗膜(レジスト膜)に光線を露光して(又は、さら
に露光後ベークを行い)潜像パターンを形成し、次いで
現像することにより、微細なパターンを高い精度で形成
できる。
After coating the photoresist resin composition on a substrate or substrate and drying, the coating film (resist film) is exposed to light through a predetermined mask (or further baked after exposure). The fine pattern can be formed with high precision by forming a latent image pattern and then developing.

【0053】基材又は基板としては、シリコンウエハ、
金属、プラスチック、ガラス、セラミックなどが挙げら
れる。フォトレジスト用樹脂組成物の塗布は、スピンコ
ータ、ディップコータ、ローラコータなどの慣用の塗布
手段を用いて行うことができる。塗膜の厚みは、例えば
0.1〜20μm、好ましくは0.3〜2μm程度であ
る。
As the substrate or substrate, a silicon wafer,
Examples include metal, plastic, glass, and ceramic. The application of the resin composition for a photoresist can be performed using a conventional application means such as a spin coater, a dip coater, and a roller coater. The thickness of the coating film is, for example, about 0.1 to 20 μm, and preferably about 0.3 to 2 μm.

【0054】露光には、種々の波長の光線、例えば、紫
外線、X線などが利用でき、半導体レジスト用では、通
常、g線、i線、エキシマレーザー(例えば、XeC
l、KrF、KrCl、ArF、ArClなど)などが
使用される。露光エネルギーは、例えば1〜1000m
J/cm2、好ましくは10〜500mJ/cm2程度で
ある。
Light of various wavelengths, for example, ultraviolet rays, X-rays, etc. can be used for the exposure. For semiconductor resists, g-rays, i-rays, excimer lasers (eg, XeC
1, KrF, KrCl, ArF, ArCl, etc.) are used. Exposure energy is, for example, 1 to 1000 m
J / cm 2 , preferably about 10 to 500 mJ / cm 2 .

【0055】光照射により光酸発生剤から酸が生成し、
この酸により、例えば前記高分子化合物のアルカリ可溶
性ユニットのカルボキシル基等の保護基(脱離性基)が
速やかに脱離して、可溶化に寄与するカルボキシル基等
が生成する。そのため、水又はアルカリ現像液による現
像により、所定のパターンを精度よく形成できる。
An acid is generated from the photoacid generator by light irradiation,
By this acid, for example, a protective group (leaving group) such as a carboxyl group of the alkali-soluble unit of the polymer compound is rapidly eliminated, and a carboxyl group or the like contributing to solubilization is generated. Therefore, a predetermined pattern can be accurately formed by development with water or an alkali developing solution.

【0056】[0056]

【発明の効果】本発明のフォトレジスト用高分子化合物
は、ラクトン環の縮合した特定構造の脂環式骨格を有す
るモノマー単位を含み、またカルボン酸が置換されてい
ることにより溶解性や、酸脱離性などの機能も付加され
ているので、高度なエッチング耐性が期待されるうえ
に、基板に対する密着性、レジストとしての溶剤への溶
解性、アルカリ現像液との親和性などフォトレジストに
必要とされる機能をバランスよく備えている。また、他
のモノマーと組み合わせることにより、更にそれぞれの
機能を向上させることも可能である。
The polymer compound for photoresist of the present invention contains a monomer unit having an alicyclic skeleton having a specific structure in which a lactone ring is condensed. A function such as releasability is added, so high etching resistance is expected, and it is necessary for photoresists such as adhesion to substrates, solubility in solvents as resists, and affinity with alkali developers. It has a well-balanced function. Further, by combining with other monomers, it is also possible to further improve the respective functions.

【0057】本発明のフォトレジスト用樹脂組成物及び
半導体の製造方法によれば、レジストとして上記のよう
な優れた特性を有する高分子化合物を用いるので、微細
なパターンを高い精度で形成することができる。
According to the photoresist resin composition and the method for producing a semiconductor of the present invention, since a polymer having the above-mentioned excellent properties is used as a resist, a fine pattern can be formed with high precision. it can.

【0058】[0058]

【実施例】以下に、実施例に基づいて本発明をより詳細
に説明するが、本発明はこれらの実施例により何ら限定
されるものではない。
The present invention will be described in more detail with reference to the following Examples, which should not be construed as limiting the invention thereto.

【0059】合成例1 シクロペンタジエン6.6g(0.1モル)、無水マレ
イン酸9.8g(0.1モル)、溶媒として酢酸エチル
200mlに溶解し、オートクレーブにしこみ100℃
で2時間撹拌した。室温に冷却後、反応混合物は、還流
冷却器と滴下ロートを備えたフラスコに入れ、タングス
テン酸0.2gと水3.6gを混合し、温度50℃にて
30%過酸化水素14.3g(0.13モル)を10分
で滴下した。同温度でさらに5時間反応させ、室温に冷
却後、水洗を行った。有機層をロータリーエバポレータ
ーに入れ、溶媒の酢酸エチルを留去させた。残った液を
テトラヒドロフラン200mlと混合し、還流冷却器と
滴下ロートを備えたフラスコに入れ、さらにトリエチル
アミン30.3g(0.3モル)を加え、メタクリルク
ロリド10.5g(0.1モル)を撹拌しながら室温
で、30分かけて滴下した。さらに6時間室温で撹拌を
続けた。反応混合液はガスクロマトグラフィーで分析し
たら、目的とした2−(メタ)アクリロイルオキシ−7
−カルボキシ−4−オキサトリシクロ[4.2.1.0
3,7]ノナン−5−オンが14.5g(0.055モ
ル)検出された。反応混合液はろ過後、カラムクロマト
グラフィーにて目的とするモノマーを分離精製した。目
的物はNMRとIRの各スペクトルにて同定を行い結果
を下記に示した。1 H−NMR(400MHz、CDCl3)δ1.8(1
H、ddd)、δ1.9(3H、s)、δ2.0(1
H、ddd)、δ2.8(1H、m)、δ2.9(1
H、m)、δ3.1(1H、dd)、δ3.2(1H、
dd)、δ4.6(1H、dd)、δ4.7(1H、d
d)、δ5.6(1H、d)、δ6.1(1H、d) FT−IR(NaCl)2500−3500cm-1、1
800cm-1、1730cm-1、1700cm-1、16
30cm-1
Synthesis Example 1 6.6 g (0.1 mol) of cyclopentadiene, 9.8 g (0.1 mol) of maleic anhydride, and 200 ml of ethyl acetate as a solvent were dissolved in an autoclave, and the solution was poured into an autoclave at 100 ° C.
For 2 hours. After cooling to room temperature, the reaction mixture was placed in a flask equipped with a reflux condenser and a dropping funnel, and 0.2 g of tungstic acid and 3.6 g of water were mixed, and 14.3 g of 30% hydrogen peroxide at a temperature of 50 ° C. ( 0.13 mol) was added dropwise in 10 minutes. The reaction was continued at the same temperature for 5 hours, cooled to room temperature, and washed with water. The organic layer was placed in a rotary evaporator, and the solvent, ethyl acetate, was distilled off. The remaining liquid was mixed with 200 ml of tetrahydrofuran, placed in a flask equipped with a reflux condenser and a dropping funnel, further added with 30.3 g (0.3 mol) of triethylamine, and stirred with 10.5 g (0.1 mol) of methacryl chloride. The solution was added dropwise at room temperature over 30 minutes. Stirring was continued at room temperature for a further 6 hours. When the reaction mixture was analyzed by gas chromatography, the desired 2- (meth) acryloyloxy-7 was obtained.
-Carboxy-4-oxatricyclo [4.2.1.0
[3,7 ] nonan-5-one was detected in an amount of 14.5 g (0.055 mol). After the reaction mixture was filtered, the target monomer was separated and purified by column chromatography. The target compound was identified by NMR and IR spectra, and the results are shown below. 1 H-NMR (400 MHz, CDCl 3 ) δ 1.8 (1
H, ddd), δ 1.9 (3H, s), δ 2.0 (1
H, ddd), δ 2.8 (1H, m), δ 2.9 (1
H, m), δ3.1 (1H, dd), δ3.2 (1H,
dd), δ4.6 (1H, dd), δ4.7 (1H, d
d), δ5.6 (1H, d), δ6.1 (1H, d) FT-IR (NaCl) 2500-3500 cm −1 , 1
800 cm −1 , 1730 cm −1 , 1700 cm −1 , 16
30 cm -1 .

【0060】本合成のルートを下記に示した。The route of this synthesis is shown below.

【0061】[0061]

【化9】 Embedded image

【0062】合成例2 シクロペンタジエン6.6g(0.1モル)、マレイン
酸モノ−t−ブチルエステル17.2g(0.1モ
ル)、溶媒として酢酸エチル200mlに溶解し、オー
トクレーブにしこみ100℃で2時間撹拌した。室温に
冷却後、反応混合物は、還流冷却器と滴下ロートを備え
たフラスコに入れ、さらにタングステン酸0.2g加え
混合し、温度50℃にて30%過酸化水素14.3g
(0.13モル)を10分で滴下した。同温度でさらに
5時間反応させ、室温に冷却後、水洗を行った。有機層
をロータリーエバポレーターに入れ、溶媒の酢酸エチル
を留去させた。残った液をテトラヒドロフラン200m
lと混合し、還流冷却器と滴下ロートを備えたフラスコ
に入れ、さらにトリエチルアミン30.3g(0.3モ
ル)を加え、メタクリルクロリド10.5g(0.1モ
ル)を撹拌しながら室温で、30分かけて滴下した。さ
らに6時間室温で撹拌を続けた。反応混合液はガスクロ
マトグラフィーで分析したら、目的とした2−(メタ)
アクリロイルオキシ−7−t−ブチロキシカルボニル−
4−オキサトリシクロ[4.2.1.03,7]ノナン−
5−オンが17.5g(0.054モル)検出された。
反応混合液はろ過後、カラムクロマトグラフィーにて目
的とするモノマーを分離精製した。目的物はNMRとI
Rの各スペクトルにて同定を行い結果を下記に示した。1 H−NMR(400MHz、CDCl3)δ1.3(9
H、s)、δ1.8(1H、ddd)、δ1.9(3
H、s)、δ2.0(1H、ddd)、δ2.8(1
H、m)、δ2.9(1H、m)、δ3.1(1H、d
d)、δ3.2(1H、dd)、δ4.6(1H、d
d)、δ4.7(1H、dd)、δ5.6(1H、
d)、δ6.1(1H、d) FT−IR(NaCl)1800cm-1、1730cm
-1、1710cm-1、1630cm-1
Synthesis Example 2 6.6 g (0.1 mol) of cyclopentadiene, 17.2 g (0.1 mol) of mono-t-butyl maleate, and 200 ml of ethyl acetate as a solvent were dissolved in an autoclave and heated at 100 ° C. For 2 hours. After cooling to room temperature, the reaction mixture was placed in a flask equipped with a reflux condenser and a dropping funnel, further added with 0.2 g of tungstic acid and mixed, and at a temperature of 50 ° C., 14.3 g of 30% hydrogen peroxide.
(0.13 mol) was added dropwise in 10 minutes. The reaction was continued at the same temperature for 5 hours, cooled to room temperature, and washed with water. The organic layer was placed in a rotary evaporator, and the solvent, ethyl acetate, was distilled off. The remaining liquid is treated with tetrahydrofuran 200m
The mixture was placed in a flask equipped with a reflux condenser and a dropping funnel, 30.3 g (0.3 mol) of triethylamine was further added, and 10.5 g (0.1 mol) of methacryl chloride was stirred at room temperature. It was added dropwise over 30 minutes. Stirring was continued at room temperature for a further 6 hours. When the reaction mixture was analyzed by gas chromatography, the desired 2- (meth)
Acryloyloxy-7-t-butyroxycarbonyl-
4-oxatricyclo [4.2.1.0 3,7 ] nonane-
17.5 g (0.054 mol) of 5-one was detected.
After the reaction mixture was filtered, the target monomer was separated and purified by column chromatography. The target is NMR and I
Identification was performed using each spectrum of R, and the results are shown below. 1 H-NMR (400 MHz, CDCl 3 ) δ1.3 (9
H, s), δ 1.8 (1H, ddd), δ 1.9 (3
H, s), δ2.0 (1H, ddd), δ2.8 (1
H, m), δ2.9 (1H, m), δ3.1 (1H, d
d), δ3.2 (1H, dd), δ4.6 (1H, d
d), δ4.7 (1H, dd), δ5.6 (1H,
d), δ 6.1 (1H, d) FT-IR (NaCl) 1800 cm −1 , 1730 cm
-1 , 1710 cm -1 , 1630 cm -1 .

【0063】本合成のルートを下記に示した。The route of this synthesis is shown below.

【0064】[0064]

【化10】 Embedded image

【0065】実施例1 下記構造の高分子化合物の合成Example 1 Synthesis of polymer compound having the following structure

【0066】[0066]

【化11】 Embedded image

【0067】還流管、攪拌子、3方コックを備えた10
0ml丸底フラスコにモノマー[1−1](メタクリレ
ート)2.11g(7.9mmol)、モノマー[2−
1](メタクリレート)4.15g(15.8mmo
l)、モノマー[3−1](メタクリレート)3.74
g(15.8mmol)、および開始剤(和光純薬工業
製V−65)1.00gを入れ、テトラヒドロフラン4
0gに溶解させた。続いて、フラスコ内を乾燥窒素置換
した後、反応系の温度を60℃に保ち、窒素雰囲気下、
6時間攪拌した。反応液をヘキサンと酢酸エチルの9:
1混合液500mlに落とし、生じた沈澱物を濾別する
ことで精製を行った。回収した沈澱を減圧乾燥後、再度
テトラヒドロフラン40gに溶解させ、上述の沈澱精製
操作を繰り返すことにより、所望の樹脂7.12gを得
た。回収したポリマーをGPC分析したところ、重量平
均分子量が6300、分子量分布が2.11であった。
1H−NMR(DMSO−d6中)分析では、1.5−
2.5ppm(ブロード)のほか、3.1ppm、4.
6ppm、4.7ppm、12.5ppm付近に強いシ
グナルが観測された。
A 10-tube equipped with a reflux pipe, a stirrer and a three-way cock
In a 0 ml round bottom flask, 2.11 g (7.9 mmol) of monomer [1-1] (methacrylate) and monomer [2-
1] (methacrylate) 4.15 g (15.8 mmol)
l), monomer [3-1] (methacrylate) 3.74
g (15.8 mmol) and 1.00 g of an initiator (V-65 manufactured by Wako Pure Chemical Industries, Ltd.), and tetrahydrofuran 4
0 g was dissolved. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 60 ° C., and under a nitrogen atmosphere,
Stir for 6 hours. The reaction solution was mixed with hexane and ethyl acetate 9:
One mixture was dropped to 500 ml, and the resulting precipitate was separated by filtration for purification. The collected precipitate was dried under reduced pressure, dissolved again in 40 g of tetrahydrofuran, and the above-mentioned precipitation purification operation was repeated to obtain 7.12 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 6,300 and a molecular weight distribution of 2.11.
In 1 H-NMR (in DMSO-d6) analysis, 1.5-
In addition to 2.5 ppm (broad), 3.1 ppm, 4.
Strong signals were observed around 6 ppm, 4.7 ppm and 12.5 ppm.

【0068】実施例2 下記構造の高分子化合物の合成Example 2 Synthesis of polymer compound having the following structure

【0069】[0069]

【化12】 Embedded image

【0070】還流管、攪拌子、3方コックを備えた10
0ml丸底フラスコにモノマー[1−1](メタクリレ
ート)2.21g(8.3mmol)、モノマー[2−
19](メタクリレート)3.88g(16.6mmo
l)、モノマー[3−1](メタクリレート)3.91
g(16.6mmol)、および開始剤(和光純薬工業
製V−65)1.00gを入れ、テトラヒドロフラン4
0gに溶解させた。続いて、フラスコ内を乾燥窒素置換
した後、反応系の温度を60℃に保ち、窒素雰囲気下、
6時間攪拌した。反応液をヘキサンと酢酸エチルの9:
1混合液500mlに落とし、生じた沈澱物を濾別する
ことで精製を行った。回収した沈澱を減圧乾燥後、再度
テトラヒドロフラン40gに溶解させ、上述の沈澱精製
操作を繰り返すことにより、所望の樹脂7.03gを得
た。回収したポリマーをGPC分析したところ、重量平
均分子量が5400、分子量分布が1.88であった。
1H−NMR(DMSO−d6中)分析では、1.5−
2.5ppm(ブロード)のほか、3.1ppm、4.
6ppm、4.7ppm、12.5ppm付近に強いシ
グナルが観測された。
[0086] A reflux tube, stirrer, and three-way cock
In a 0 ml round bottom flask, 2.21 g (8.3 mmol) of monomer [1-1] (methacrylate) and monomer [2-
19] (methacrylate) 3.88 g (16.6 mmol)
l), monomer [3-1] (methacrylate) 3.91
g (16.6 mmol) and 1.00 g of an initiator (V-65 manufactured by Wako Pure Chemical Industries, Ltd.), and tetrahydrofuran 4
0 g was dissolved. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 60 ° C., and under a nitrogen atmosphere,
Stir for 6 hours. The reaction solution was mixed with hexane and ethyl acetate 9:
One mixture was dropped to 500 ml, and the resulting precipitate was separated by filtration for purification. The recovered precipitate was dried under reduced pressure, dissolved again in 40 g of tetrahydrofuran, and the above-mentioned precipitation purification operation was repeated to obtain 7.03 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 5,400 and a molecular weight distribution of 1.88.
In 1 H-NMR (in DMSO-d6) analysis, 1.5-
In addition to 2.5 ppm (broad), 3.1 ppm, 4.
Strong signals were observed around 6 ppm, 4.7 ppm and 12.5 ppm.

【0071】実施例3 下記構造の高分子化合物の合成Example 3 Synthesis of polymer compound having the following structure

【0072】[0072]

【化13】 Embedded image

【0073】還流管、攪拌子、3方コックを備えた10
0ml丸底フラスコにモノマー[1−1](メタクリレ
ート)3.13g(11.8mmol)、モノマー[2
−1](メタクリレート)4.11g(15.7mmo
l)、モノマー[3−6](メタクリレート)2.75
g(11.8mmol)、および開始剤(和光純薬工業
製V−65)1.00gを入れ、テトラヒドロフラン4
0gに溶解させた。続いて、フラスコ内を乾燥窒素置換
した後、反応系の温度を60℃に保ち、窒素雰囲気下、
6時間攪拌した。反応液をヘキサンと酢酸エチルの9:
1混合液500mlに落とし、生じた沈澱物を濾別する
ことで精製を行った。回収した沈澱を減圧乾燥後、再度
テトラヒドロフラン40gに溶解させ、上述の沈澱精製
操作を繰り返すことにより、所望の樹脂7.12gを得
た。回収したポリマーをGPC分析したところ、重量平
均分子量が6300、分子量分布が2.11であった。
1H−NMR(DMSO−d6中)分析では、1.5−
2.5ppm(ブロード)のほか、3.1ppm、4.
6ppm、12.5ppm付近に強いシグナルが観測さ
れた。
A 10 having a reflux pipe, a stirrer and a three-way cock
In a 0 ml round bottom flask, 3.13 g (11.8 mmol) of monomer [1-1] (methacrylate) and monomer [2
-1] (methacrylate) 4.11 g (15.7 mmol)
l), monomer [3-6] (methacrylate) 2.75
g (11.8 mmol) and 1.00 g of an initiator (V-65 manufactured by Wako Pure Chemical Industries, Ltd.), and tetrahydrofuran 4
0 g was dissolved. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 60 ° C., and under a nitrogen atmosphere,
Stir for 6 hours. The reaction solution was mixed with hexane and ethyl acetate 9:
One mixture was dropped to 500 ml, and the resulting precipitate was separated by filtration for purification. The collected precipitate was dried under reduced pressure, dissolved again in 40 g of tetrahydrofuran, and the above-mentioned precipitation purification operation was repeated to obtain 7.12 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 6,300 and a molecular weight distribution of 2.11.
In 1 H-NMR (in DMSO-d6) analysis, 1.5-
In addition to 2.5 ppm (broad), 3.1 ppm, 4.
Strong signals were observed around 6 ppm and 12.5 ppm.

【0074】実施例4 下記構造の高分子化合物の合成Example 4 Synthesis of polymer compound having the following structure

【0075】[0075]

【化14】 Embedded image

【0076】還流管、攪拌子、3方コックを備えた10
0ml丸底フラスコにモノマー[1−5](メタクリレ
ート)6.48g(20.1mmol)、モノマー[2
−1](メタクリレート)3.52g(13.4mmo
l)、および開始剤(和光純薬工業製V−65)1.0
0gを入れ、テトラヒドロフラン40gに溶解させた。
続いて、フラスコ内を乾燥窒素置換した後、反応系の温
度を60℃に保ち、窒素雰囲気下、6時間攪拌した。反
応液をヘキサンと酢酸エチルの9:1混合液500ml
に落とし、生じた沈澱物を濾別することで精製を行っ
た。回収した沈澱を減圧乾燥後、再度テトラヒドロフラ
ン40gに溶解させ、上述の沈澱精製操作を繰り返すこ
とにより、所望の樹脂7.27gを得た。回収したポリ
マーをGPC分析したところ、重量平均分子量が650
0、分子量分布が2.14であった。1H−NMR(D
MSO−d6中)分析では、1.5−2.5ppm(ブ
ロード)のほか、3.1ppm、4.6ppmに強いシ
グナルが観測された。
A 10-port tube equipped with a reflux tube, stirrer and 3-way cock
In a 0 ml round bottom flask, 6.48 g (20.1 mmol) of monomer [1-5] (methacrylate) and monomer [2
-1] (methacrylate) 3.52 g (13.4 mmol)
l) and initiator (V-65 manufactured by Wako Pure Chemical Industries) 1.0
0 g was added and dissolved in 40 g of tetrahydrofuran.
Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 60 ° C., and the mixture was stirred under a nitrogen atmosphere for 6 hours. 500 ml of a 9: 1 mixture of hexane and ethyl acetate
And the resulting precipitate was filtered off to purify. The collected precipitate was dried under reduced pressure, dissolved again in 40 g of tetrahydrofuran, and the above-mentioned precipitation purification operation was repeated to obtain 7.27 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 650.
0, molecular weight distribution was 2.14. 1 H-NMR (D
In the analysis (in MSO-d6), strong signals were observed at 3.1 ppm and 4.6 ppm in addition to 1.5-2.5 ppm (broad).

【0077】実施例5 下記構造の高分子化合物の合成Example 5 Synthesis of a polymer compound having the following structure

【0078】[0078]

【化15】 Embedded image

【0079】還流管、攪拌子、3方コックを備えた10
0ml丸底フラスコにモノマー[1−5](メタクリレ
ート)6.74g(20.9mmol)、モノマー[2
−19](メタクリレート)3.26g(13.9mm
ol)、および開始剤(和光純薬工業製V−65)1.
00gを入れ、テトラヒドロフラン40gに溶解させ
た。続いて、フラスコ内を乾燥窒素置換した後、反応系
の温度を60℃に保ち、窒素雰囲気下、6時間攪拌し
た。反応液をヘキサンと酢酸エチルの9:1混合液50
0mlに落とし、生じた沈澱物を濾別することで精製を
行った。回収した沈澱を減圧乾燥後、再度テトラヒドロ
フラン40gに溶解させ、上述の沈澱精製操作を繰り返
すことにより、所望の樹脂6.47gを得た。回収した
ポリマーをGPC分析したところ、重量平均分子量が5
800、分子量分布が1.88であった。1H−NMR
(DMSO−d6中)分析では、1.5−2.5ppm
(ブロード)のほか、3.1ppm、4.6ppmに強
いシグナルが観測された。
[0086] A reflux tube, a stirrer, and a 10-way
In a 0 ml round bottom flask, 6.74 g (20.9 mmol) of monomer [1-5] (methacrylate) and monomer [2
-19] (methacrylate) 3.26 g (13.9 mm
ol) and an initiator (V-65 manufactured by Wako Pure Chemical Industries, Ltd.)
00 g was added and dissolved in 40 g of tetrahydrofuran. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 60 ° C., and the mixture was stirred under a nitrogen atmosphere for 6 hours. The reaction solution was mixed with a 9: 1 mixture of hexane and ethyl acetate 50.
The mixture was dropped to 0 ml, and the resulting precipitate was separated by filtration for purification. The recovered precipitate was dried under reduced pressure, dissolved again in 40 g of tetrahydrofuran, and the above-mentioned precipitation purification operation was repeated to obtain 6.47 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 5
800 and the molecular weight distribution was 1.88. 1 H-NMR
1.5-2.5 ppm (in DMSO-d6) analysis
In addition to (broad), strong signals were observed at 3.1 ppm and 4.6 ppm.

【0080】実施例6 下記構造の高分子化合物の合成Example 6 Synthesis of polymer compound having the following structure

【0081】[0081]

【化16】 Embedded image

【0082】攪拌子と還流管を備えた3つ口フラスコ
に、モノマー[1−2](アクリレート)3.0g(1
2mmol)、モノマー[2−41]4.7g(24m
mol)、モノマー[3−35]2.3g(26mmo
l)、および開始剤(和光純薬工業製V−601)1.
0gを入れ、酢酸n−ブチル10gに溶解させた。続い
て、フラスコ内を乾燥窒素置換した後、反応系の温度を
70℃に保ち、窒素雰囲気下、6時間攪拌した。反応液
をヘキサンと酢酸エチルの3:1混合液100mlに落
とし、生じた沈澱物を濾別することで精製を行った。回
収した沈澱を減圧乾燥後、再度酢酸n−ブチル10gに
溶解させ、上述の沈澱精製操作をさらに2回繰り返すこ
とにより、所望の樹脂7.5gを得た。回収したポリマ
ーをGPC分析したところ、重量平均分子量が700
0、分子量分布が2.0であった。1H−NMR(DM
SO−d6中)分析では、0.9−3.6ppm(ブロ
ード)のほか、1.3ppm、1.6ppm、1.9p
pm、2.6ppm、2.8ppm、3.2ppm、
3.6ppm、4.4ppmに強いシグナルが観測され
た。
In a three-necked flask equipped with a stirrer and a reflux tube, 3.0 g (1) of monomer [1-2] (acrylate) was added.
2 mmol), 4.7 g of monomer [2-41] (24 m
mol), 2.3 g of monomer [3-35] (26 mmol)
l) and initiator (V-601 manufactured by Wako Pure Chemical Industries)
0 g was added and dissolved in 10 g of n-butyl acetate. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 70 ° C., and the mixture was stirred under a nitrogen atmosphere for 6 hours. The reaction solution was dropped into 100 ml of a 3: 1 mixture of hexane and ethyl acetate, and the resulting precipitate was separated by filtration for purification. The collected precipitate was dried under reduced pressure, dissolved again in 10 g of n-butyl acetate, and the above-mentioned precipitation purification operation was further repeated twice to obtain 7.5 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 700.
0 and the molecular weight distribution was 2.0. 1 H-NMR (DM
In SO-d6) analysis, in addition to 0.9-3.6 ppm (broad), 1.3 ppm, 1.6 ppm, 1.9 p
pm, 2.6 ppm, 2.8 ppm, 3.2 ppm,
Strong signals were observed at 3.6 ppm and 4.4 ppm.

【0083】実施例7 下記構造の高分子化合物の合成Example 7 Synthesis of polymer compound having the following structure

【0084】[0084]

【化17】 Embedded image

【0085】攪拌子と還流管を備えた3つ口フラスコ
に、モノマー[1−3](アクリレート)3.1g(1
2mmol)、モノマー[2−41]4.6g(24m
mol)、モノマー[3−35]2.3g(26mmo
l)、および開始剤(和光純薬工業製V−601)1.
0gを入れ、酢酸n−ブチル10gに溶解させた。続い
て、フラスコ内を乾燥窒素置換した後、反応系の温度を
70℃に保ち、窒素雰囲気下、6時間攪拌した。反応液
をヘキサンと酢酸エチルの3:1混合液100mlに落
とし、生じた沈澱物を濾別することで精製を行った。回
収した沈澱を減圧乾燥後、再度酢酸n−ブチル10gに
溶解させ、上述の沈澱精製操作をさらに2回繰り返すこ
とにより、所望の樹脂7.5gを得た。回収したポリマ
ーをGPC分析したところ、重量平均分子量が710
0、分子量分布が2.0であった。1H−NMR(DM
SO−d6中)分析では、0.9−3.6ppm(ブロ
ード)のほか、1.3ppm、1.6ppm、1.9p
pm、2.6ppm、2.8ppm、3.2ppm、
3.6ppm、4.4ppmに強いシグナルが観測され
た。
In a three-necked flask equipped with a stirrer and a reflux tube, 3.1 g (1) of monomer [1-3] (acrylate) was added.
2 mmol), 4.6 g of monomer [2-41] (24 m
mol), 2.3 g of monomer [3-35] (26 mmol)
l) and initiator (V-601 manufactured by Wako Pure Chemical Industries)
0 g was added and dissolved in 10 g of n-butyl acetate. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 70 ° C., and the mixture was stirred under a nitrogen atmosphere for 6 hours. The reaction solution was dropped into 100 ml of a 3: 1 mixture of hexane and ethyl acetate, and the resulting precipitate was separated by filtration for purification. The collected precipitate was dried under reduced pressure, dissolved again in 10 g of n-butyl acetate, and the above-mentioned precipitation purification operation was further repeated twice to obtain 7.5 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 710.
0 and the molecular weight distribution was 2.0. 1 H-NMR (DM
In SO-d6) analysis, in addition to 0.9-3.6 ppm (broad), 1.3 ppm, 1.6 ppm, 1.9 p
pm, 2.6 ppm, 2.8 ppm, 3.2 ppm,
Strong signals were observed at 3.6 ppm and 4.4 ppm.

【0086】実施例8 下記構造の高分子化合物の合成Example 8 Synthesis of polymer compound having the following structure

【0087】[0087]

【化18】 Embedded image

【0088】攪拌子と還流管を備えた3つ口フラスコ
に、モノマー[1−4](アクリレート)3.2g(1
2mmol)、モノマー[2−41]4.5g(24m
mol)、モノマー[3−35]2.3g(26mmo
l)、および開始剤(和光純薬工業製V−601)1.
0gを入れ、酢酸n−ブチル10gに溶解させた。続い
て、フラスコ内を乾燥窒素置換した後、反応系の温度を
70℃に保ち、窒素雰囲気下、6時間攪拌した。反応液
をヘキサンと酢酸エチルの3:1混合液100mlに落
とし、生じた沈澱物を濾別することで精製を行った。回
収した沈澱を減圧乾燥後、再度酢酸n−ブチル10gに
溶解させ、上述の沈澱精製操作をさらに2回繰り返すこ
とにより、所望の樹脂7.5gを得た。回収したポリマ
ーをGPC分析したところ、重量平均分子量が700
0、分子量分布が2.0であった。1H−NMR(DM
SO−d6中)分析では、0.9−3.6ppm(ブロ
ード)のほか、1.3ppm、1.6ppm、1.9p
pm、2.6ppm、2.8ppm、3.2ppm、
3.6ppm、4.4ppmに強いシグナルが観測され
た。
In a three-necked flask equipped with a stirrer and a reflux tube, 3.2 g (1) of monomer [1-4] (acrylate) was added.
2 mmol), 4.5 g of monomer [2-41] (24 m
mol), 2.3 g of monomer [3-35] (26 mmol)
l) and initiator (V-601 manufactured by Wako Pure Chemical Industries)
0 g was added and dissolved in 10 g of n-butyl acetate. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 70 ° C., and the mixture was stirred under a nitrogen atmosphere for 6 hours. The reaction solution was dropped into 100 ml of a 3: 1 mixture of hexane and ethyl acetate, and the resulting precipitate was separated by filtration for purification. The collected precipitate was dried under reduced pressure, dissolved again in 10 g of n-butyl acetate, and the above-mentioned precipitation purification operation was further repeated twice to obtain 7.5 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 700.
0 and the molecular weight distribution was 2.0. 1 H-NMR (DM
In SO-d6) analysis, in addition to 0.9-3.6 ppm (broad), 1.3 ppm, 1.6 ppm, 1.9 p
pm, 2.6 ppm, 2.8 ppm, 3.2 ppm,
Strong signals were observed at 3.6 ppm and 4.4 ppm.

【0089】比較例1 下記構造の高分子化合物の合成Comparative Example 1 Synthesis of polymer compound having the following structure

【0090】[0090]

【化19】 Embedded image

【0091】還流管、攪拌子、3方コックを備えた10
0ml丸底フラスコに2−メタクリロイルオキシ−4−
オキサトリシクロ[4.2.1.03,7]ノナン−5−
オン1.82g(8.2mmol)、モノマー[2−
1](メタクリレート)4.30g(16.4mmo
l)、モノマー[3−1](メタクリレート)3.88
g(16.4mmol)、および開始剤(和光純薬工業
製V−65)1.00gを入れ、テトラヒドロフラン4
0gに溶解させた。続いて、フラスコ内を乾燥窒素置換
した後、反応系の温度を60℃に保ち、窒素雰囲気下、
6時間攪拌した。反応液をヘキサンと酢酸エチルの9:
1混合液500mlに落とし、生じた沈澱物を濾別する
ことで精製を行った。回収した沈澱を減圧乾燥後、再度
テトラヒドロフラン40gに溶解させ、上述の沈澱精製
操作を繰り返すことにより、所望の樹脂7.12gを得
た。回収したポリマーをGPC分析したところ、重量平
均分子量が6700、分子量分布が2.21であった。
1H−NMR(DMSO−d6中)分析では、1.5−
2.5ppm(ブロード)のほか、3.1ppm、4.
6ppm、4.7ppm付近に強いシグナルが観測され
た。
[0091] A 10-tube equipped with a reflux pipe, a stirrer and a three-way cock
In a 0 ml round bottom flask, add 2-methacryloyloxy-4-
Oxatricyclo [4.2.1.0 3,7 ] nonane-5
1.82 g (8.2 mmol) of monomer [2-
1] (methacrylate) 4.30 g (16.4 mmol)
l), monomer [3-1] (methacrylate) 3.88
g (16.4 mmol) and 1.00 g of an initiator (V-65 manufactured by Wako Pure Chemical Industries, Ltd.) were added.
0 g was dissolved. Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 60 ° C., and under a nitrogen atmosphere,
Stir for 6 hours. The reaction solution was mixed with hexane and ethyl acetate 9:
One mixture was dropped to 500 ml, and the resulting precipitate was separated by filtration for purification. The collected precipitate was dried under reduced pressure, dissolved again in 40 g of tetrahydrofuran, and the above-mentioned precipitation purification operation was repeated to obtain 7.12 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 6,700 and a molecular weight distribution of 2.21.
In 1 H-NMR (in DMSO-d6) analysis, 1.5-
In addition to 2.5 ppm (broad), 3.1 ppm, 4.
Strong signals were observed around 6 ppm and 4.7 ppm.

【0092】比較例2 下記構造の高分子化合物の合成Comparative Example 2 Synthesis of polymer compound having the following structure

【0093】[0093]

【化20】 Embedded image

【0094】還流管、攪拌子、3方コックを備えた10
0ml丸底フラスコに2−メタクリロイルオキシ−4−
オキサトリシクロ[4.2.1.03,7]ノナン−5−
オン5.60g(25.2mmol)、モノマー[2−
1](メタクリレート)4.40g(16.8mmo
l)、および開始剤(和光純薬工業製V−65)1.0
0gを入れ、テトラヒドロフラン40gに溶解させた。
続いて、フラスコ内を乾燥窒素置換した後、反応系の温
度を60℃に保ち、窒素雰囲気下、6時間攪拌した。反
応液をヘキサンと酢酸エチルの9:1混合液500ml
に落とし、生じた沈澱物を濾別することで精製を行っ
た。回収した沈澱を減圧乾燥後、再度テトラヒドロフラ
ン40gに溶解させ、上述の沈澱精製操作を繰り返すこ
とにより、所望の樹脂7.55gを得た。回収したポリ
マーをGPC分析したところ、重量平均分子量が690
0、分子量分布が2.12であった。1H−NMR(D
MSO−d6中)分析では、1.5−2.5ppm(ブ
ロード)のほか、3.1ppm、4.6ppmに強いシ
グナルが観測された。
[0094] A 10-tube equipped with a reflux pipe, stirrer and three-way cock
In a 0 ml round bottom flask, add 2-methacryloyloxy-4-
Oxatricyclo [4.2.1.0 3,7 ] nonane-5
5.60 g (25.2 mmol) of the monomer [2-
1] (methacrylate) 4.40 g (16.8 mmol)
l) and initiator (V-65 manufactured by Wako Pure Chemical Industries) 1.0
0 g was added and dissolved in 40 g of tetrahydrofuran.
Subsequently, after the inside of the flask was replaced with dry nitrogen, the temperature of the reaction system was maintained at 60 ° C., and the mixture was stirred under a nitrogen atmosphere for 6 hours. 500 ml of a 9: 1 mixture of hexane and ethyl acetate
And the resulting precipitate was filtered off to purify. The recovered precipitate was dried under reduced pressure, dissolved again in 40 g of tetrahydrofuran, and the above-mentioned precipitation purification operation was repeated to obtain 7.55 g of a desired resin. GPC analysis of the recovered polymer showed a weight average molecular weight of 690.
0, molecular weight distribution was 2.12. 1 H-NMR (D
In the analysis (in MSO-d6), strong signals were observed at 3.1 ppm and 4.6 ppm in addition to 1.5-2.5 ppm (broad).

【0095】試験例1 実施例1〜8で得られたポリマー100重量部とトリフ
ェニルスルホニウムヘキサフルオロアンチモネート10
重量部とを溶媒である1,2−プロピレングリコールモ
ノメチルエーテルアセテートと混合し、ポリマー濃度1
7重量%のフォトレジスト用樹脂組成物を調製した。こ
のフォトレジスト用樹脂組成物をシリコンウエハーにス
ピンコーティング法により塗布し、厚み1.0μmの感
光層を形成した。ホットプレート上で温度100℃で1
50秒間プリベークした後、波長247nmのKrFエ
キシマレーザーを用い、マスクを介して、照射量30m
J/cm2で露光した後、100℃の温度で60秒間ポ
ストベークした。次いで、0.3Mのテトラメチルアン
モニウムヒドロキシド水溶液により60秒間現像し、純
水でリンスしたところ、何れの場合も、0.30μmの
ライン・アンド・スペースパターンが得られた。
Test Example 1 100 parts by weight of the polymer obtained in Examples 1 to 8 and triphenylsulfonium hexafluoroantimonate 10
Parts by weight and 1,2-propylene glycol monomethyl ether acetate as a solvent, and a polymer concentration of 1
7% by weight of a photoresist resin composition was prepared. The photoresist resin composition was applied to a silicon wafer by spin coating to form a photosensitive layer having a thickness of 1.0 μm. 1 at a temperature of 100 ° C on a hot plate
After pre-baking for 50 seconds, using a KrF excimer laser having a wavelength of 247 nm, the irradiation amount is 30 m through a mask.
After exposure at J / cm 2 , post-baking was performed at a temperature of 100 ° C. for 60 seconds. Subsequently, the film was developed with a 0.3 M aqueous solution of tetramethylammonium hydroxide for 60 seconds and rinsed with pure water. In each case, a line and space pattern of 0.30 μm was obtained.

【0096】試験例2 比較例1及び2で得られたポリマー100重量部とトリ
フェニルスルホニウムヘキサフルオロアンチモネート1
0重量部とを溶媒である1,2−プロピレングリコール
モノメチルエーテルアセテートと混合し、ポリマー濃度
17重量%のフォトレジスト用樹脂組成物を調製した。
しかし、樹脂の一部が溶解せず、フォトレジストとして
の機能評価できなかった。
Test Example 2 100 parts by weight of the polymer obtained in Comparative Examples 1 and 2 and triphenylsulfonium hexafluoroantimonate 1
0 parts by weight and 1,2-propylene glycol monomethyl ether acetate as a solvent were mixed to prepare a photoresist resin composition having a polymer concentration of 17% by weight.
However, part of the resin did not dissolve, and the function as a photoresist could not be evaluated.

───────────────────────────────────────────────────── フロントページの続き Fターム(参考) 2H025 AA02 AB16 AD03 BE00 BE07 BE10 BF03 BF11 CB43 FA17 4J100 AJ02R AK32R AL03Q AL03R AL08P AL08Q AL08R AR11Q AR11R AR32R BA03Q BA03R BA04Q BA11P BA11Q BA11R BA15Q BA16P BA20P BA20Q BC04R BC08R BC09P BC09Q BC09R BC12R BC53P BC53Q CA01 CA04 CA06 DA39 JA38 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2H025 AA02 AB16 AD03 BE00 BE07 BE10 BF03 BF11 CB43 FA17 4J100 AJ02R AK32R AL03Q AL03R AL08P AL08Q AL08R AR11Q AR11R AR32R BA03Q BA03R BA04Q BA11P BA11R BA15B BC09 BC BC53P BC53Q CA01 CA04 CA06 DA39 JA38

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 下記式(I) 【化1】 (上式において、Raは水素原子又はメチル基を示し、
1は水素原子又は置換基を有してもよい炭素数1〜2
0の直鎖状炭化水素基、分岐状炭化水素基、脂環式炭化
水素基、有橋脂環式炭化水素基、又は複素環基を示
す。)で表される少なくとも1種のモノマー単位を含む
フォトレジスト用高分子化合物。
1. A compound represented by the following formula (I): (In the above formula, Ra represents a hydrogen atom or a methyl group,
R 1 is a hydrogen atom or a carbon atom having 1 to 2 carbon atoms which may have a substituent.
And 0 represents a linear hydrocarbon group, a branched hydrocarbon group, an alicyclic hydrocarbon group, a bridged alicyclic hydrocarbon group, or a heterocyclic group. A) a polymer compound for a photoresist containing at least one monomer unit represented by the formula:
【請求項2】 式(I)で表される少なくとも1種のモ
ノマー単位と、下記式(IIa)〜(IIg) 【化2】 (上式において、Raは水素原子又はメチル基を示し、
2及びR3は、同一又は異なって、水素原子、又は炭素
数1〜8の炭化水素基を示し、R46は、同一又は異な
って、水素原子、保護基を有していてもよいヒドロキシ
ル基又はメチル基を示し、R7及びR8は、同一又は異な
って、水素原子、保護基を有していてもよいヒドロキシ
ル基又は−COOR9を示し、R9はt−ブチル基、2−
テトラヒドロフラニル基、2−テトラヒドロピラニル基
又は2−オキセパニル基を示し、R 10はメチル基又はエ
チル基を示し、R11及びR12は、同一又は異なって、水
素原子、保護基を有していてもよいヒドロキシル基又は
オキソ基を示し、R13は置換基を有してもよい3級の炭
化水素基を示し、R1418は、同一又は異なって、水素
原子又はメチル基を示し、R19はt−ブチル基、2−テ
トラヒドロフラニル基、2−テトラヒドロピラニル基又
は2−オキセパニル基を示す。mは1〜3の整数を示
し、nは0又は1を示す。)から選択された少なくとも
1種のモノマー単位とを含む請求項1記載のフォトレジ
スト用高分子化合物。
2. The method according to claim 1, wherein the at least one type of monomer represented by the formula (I)
Nomer units and the following formulas (IIa) to (IIg):(In the above formula, RaRepresents a hydrogen atom or a methyl group,
RTwoAnd RThreeAre the same or different and each represents a hydrogen atom or a carbon atom
Represents a hydrocarbon group of the formulas 1 to 8,Four~6Are the same or different
A hydrogen atom, a hydroxy optionally having a protecting group
A methyl group or a methyl group;7And R8Are the same or different
A hydrogen atom, a hydroxy optionally having a protecting group
Or —COOR9And R9Is a t-butyl group, 2-
Tetrahydrofuranyl group, 2-tetrahydropyranyl group
Or a 2-oxepanyl group; TenIs a methyl group or d
A tyl group;11And R12Are the same or different,
A hydrogen atom, a hydroxyl group which may have a protecting group, or
An oxo group;13Is a tertiary carbon which may have a substituent
A hydrogen group;14~18Is the same or different and is hydrogen
An atom or a methyl group;19Is a t-butyl group,
Trahydrofuranyl group, 2-tetrahydropyranyl group or
Represents a 2-oxepanyl group. m represents an integer of 1 to 3
And n represents 0 or 1. ) Selected from at least
2. The photoresist of claim 1, comprising one monomer unit.
High molecular compound for strike.
【請求項3】 式(I)で表される少なくとも1種のモ
ノマー単位と、下記式(IIIa)〜(IIIj) 【化3】 (上式において、Raは水素原子又はメチル基を示し、
20及びR21は、同一又は異なって、水素原子、保護基
を有していてもよいヒドロキシル基又は保護基を有して
いてもよいカルボキシル基を示し、R22は保護基を有し
ていてもよいヒドロキシル基、オキソ基又は保護基を有
していてもよいカルボキシル基を示す。X 13は、同一
又は異なって、−CH2−又は−CO−O−を示す。R
2325は、同一又は異なって、水素原子又はメチル基を
示す。R26及びR27は、同一又は異なって、水素原子又
はメチル基を示す。R2832は、同一又は異なって、水
素原子又はメチル基を示す。R33は、水素原子又は置換
基を有してもよい炭素数1〜20の直鎖炭化水素、分岐
炭化水素、脂環式炭化水素、有橋脂環式炭化水素を示
す。R3437は、同一又は異なって、水素原子又はメチ
ル基を示す。R38は、水素原子、保護基を有していても
よいヒドロキシル基、保護基を有していてもよいヒドロ
キシメチル基、保護基を有していてもよいカルボキシル
基を示す。R39 56はそれぞれ水素原子、メチル基又は
エチル基を示す。o、p、q及びrはそれぞれ0又は1
を示す。)から選択された少なくとも1種のモノマー単
位を含む請求項1記載のフォトレジスト用高分子化合
物。
3. The method of claim 1, wherein at least one of the
Nomer units and the following formulas (IIIa) to (IIIj):(In the above formula, RaRepresents a hydrogen atom or a methyl group,
R20And Rtwenty oneAre the same or different and are a hydrogen atom, a protecting group
Having a hydroxyl group or a protecting group which may have
Represents an optional carboxyl group;twenty twoHas a protecting group
With an optionally substituted hydroxyl, oxo or protecting group
Represents a carboxyl group which may be substituted. X 1~ThreeAre the same
Or differently, -CHTwo-Or -CO-O- is shown. R
twenty three~twenty fiveAre the same or different and each represents a hydrogen atom or a methyl group
Show. R26And R27Are the same or different and each represents a hydrogen atom or
Represents a methyl group. R28~32Are the same or different,
Represents an element atom or a methyl group. R33Is a hydrogen atom or substituted
C1-C20 linear hydrocarbon which may have a group, branched
Indicates hydrocarbon, alicyclic hydrocarbon, and bridged alicyclic hydrocarbon
You. R34~37Are the same or different and each represents a hydrogen atom or methyl.
Represents a hydroxyl group. R38Has a hydrogen atom and a protecting group
Hydroxyl group, hydro group which may have a protecting group
Xymethyl group, carboxyl optionally having a protecting group
Represents a group. R39~ 56Is a hydrogen atom, a methyl group or
Indicates an ethyl group. o, p, q and r are each 0 or 1
Is shown. At least one monomer selected from
2. The polymer compound for a photoresist according to claim 1, further comprising
object.
【請求項4】 式(I)で表される少なくとも1種のモ
ノマー単位と、式(IIa)〜(IIg)から選択された少
なくとも1種のモノマー単位とを含み、さらに式(III
a)〜(IIIj)から選択された少なくとも1種のモノ
マー単位を含む、請求項1記載のフォトレジスト用高分
子化合物。
4. It comprises at least one monomer unit represented by the formula (I) and at least one monomer unit selected from the formulas (IIa) to (IIg), and further comprises a compound represented by the formula (III)
The polymer compound for a photoresist according to claim 1, comprising at least one type of monomer unit selected from a) to (IIIj).
【請求項5】 式(I)で表される少なくとも1種のモ
ノマー単位を含み、脂環式官能基を持ったモノマー単位
を0.1〜50%含む、請求項1記載のフォトレジスト
用高分子化合物。
5. The photoresist composition according to claim 1, comprising at least one monomer unit represented by the formula (I) and 0.1 to 50% of a monomer unit having an alicyclic functional group. Molecular compound.
【請求項6】 Fedorsの方法による溶解度パラメ
ーターの値が19.5〜24.5(J/cm31/2の範
囲である請求項1〜5のいずれかの項に記載のフォトレ
ジスト用高分子化合物。
6. The photoresist according to claim 1, wherein the solubility parameter value according to the Fedors method is in the range of 19.5 to 24.5 (J / cm 3 ) 1/2 . High molecular compounds.
【請求項7】 請求項1〜6の何れかの項に記載のフォ
トレジスト用高分子化合物と光酸発生剤とを少なくとも
含むフォトレジスト用樹脂組成物。
7. A photoresist resin composition comprising at least the polymer compound for a photoresist according to claim 1 and a photoacid generator.
【請求項8】 請求項7記載のフォトレジスト用樹脂組
成物を基材又は基板上に塗布してレジスト塗膜を形成
し、露光及び現像を経てパターンを形成する工程を含む
半導体の製造方法。
8. A method for producing a semiconductor, comprising a step of applying the photoresist resin composition according to claim 7 onto a substrate or a substrate to form a resist coating film and forming a pattern through exposure and development.
JP2000368098A 2000-12-04 2000-12-04 Polymer for photoresist and resin composition for photoresist Expired - Lifetime JP4688282B2 (en)

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