JP2002158192A - Method for transferring pattern in manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve etching of a resist film after pressing by simple wet etching at a low cost in transferring a pattern by pressing a mold formed with an uneven pattern at the film. SOLUTION: A method for transferring the pattern comprises the steps of selectively modifying the resist film after the rugged mold is pressed by emitting an ultraviolet ray, and then wet etching the film. Or, the method comprises the steps of setting a heating temperature of the mold at a pressing time to a heat deteriorating temperature of the film, selectively modifying the film by pressing the mold, and then wet etching the film.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for transferring a circuit pattern during the manufacture of a semiconductor device such as a liquid crystal display, a field emission display, an organic EL display, a solar cell, and a semiconductor.

[0002]

2. Description of the Related Art U.S. Pat. No. 5,772,905 has been proposed as a method of transferring a pattern to a substrate. In this method, an uneven pattern having an uneven pattern formed on the surface is pressed onto a resist film formed on a substrate, thereby forming an uneven pattern on the resist film. In this method, a pattern of a resist film is formed on a substrate by dry etching. According to this method, it is possible to transfer a fine pattern equivalent to that of the photolithography method which has been the mainstream in the conventional pattern transfer, and the transfer time is short, and an expensive exposure apparatus required by the photolithography method is required. There is an advantage that it is not required.

[0003]

However, in the case of the above-mentioned U.S. Pat. No. 5,772,905, since the etching of the resist film after the concavo-convex press is performed by dry etching, a very expensive apparatus having a plasma generator and vacuum equipment is required. In addition to the need for a dry etching apparatus, there is a problem that productivity is poor because a vacuum is used. On the other hand, as an etching method, there is a wet etching method in addition to the above-described dry etching method. Since this method is a simple method of immersing the substrate in an etching solution, it is a very inexpensive method. However, when wet etching is applied to the resist film after the formation of the concavo-convex pattern, it is difficult to accurately etch the resist film, which is a polymer material, and the concavo-convex pattern formed by pressing can be accurately formed on the substrate. There is a problem that is very difficult.

Further, in the case of transferring a circuit pattern of a semiconductor device, a pattern portion to be transferred is generally very small with respect to the entire substrate area. However, when such a pattern transfer is performed in the above-mentioned US Pat. No. 5,772,905, the projections and depressions of the concavo-convex pattern, that is, the area to be pressed becomes very large. There is a problem because a press load is required.

[0005]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a pattern transfer method which solves the above-mentioned problems, and provides a method of transferring a circuit pattern onto a substrate during the manufacture of a semiconductor device. At the time of pressing the mold or after pressing the concave and convex mold, the resist film is selectively modified to be soluble or insoluble, so that the resist film can be etched by wet etching. Regarding the selective modification of the resist film, a wavelength of 20% is applied to the resist film at the time of pressing of the concavo-convex type or after pressing.
It is performed by ultraviolet irradiation of 0 to 400 nm. Alternatively, it is performed by heating and pressing the concavo-convex mold to the heat deterioration temperature of the resist film.

Although the resist film is irradiated with ultraviolet rays to selectively modify the resist film, it is similar to the photolithography method which is a conventional pattern transfer technique.
A major feature of the present invention is that the resist film is selectively modified by a concave / convex pattern of the resist film formed by a concave / convex press without using a photomask as in a photolithography method. In other words, by using the convex pattern of the resist film formed by the concavo-convex press as an ultraviolet mask, only the lower portion of the resist film convex pattern is not affected by the ultraviolet irradiation, becomes a non-denatured portion, and the other ultraviolet irradiation is performed. Part becomes a denatured part,
Thus, a denatured portion and a non-denatured portion can be selectively formed. Furthermore, the unevenness of the resist film formed by the uneven press has a very high aspect ratio. Therefore, it is necessary to produce a very high-precision parallel beam with UV irradiation, as in a photolithography exposure apparatus. There is no. In other words, without the need for ultra-high precision optical equipment,
Since the resist film can be selectively denatured only by ultraviolet irradiation by an ultraviolet lamp, it is a very inexpensive method.

As described above, selective modification by irradiation with ultraviolet light includes a method of solubilizing a resist film by irradiation with ultraviolet light and a method of insolubilizing the resist film.

In the case of solubilization, as described above, the resist film having a concave-convex shape formed by the concave-convex mold is irradiated with ultraviolet light by using a polymer material which is solubilized by the irradiation of the resist film. Only the lower part of the pattern is an insoluble non-denatured part, and the rest is a soluble denatured part. It is wet etched to form only the insoluble non-denatured portion under the convex pattern as a resist pattern on the substrate. In this method, a positive photoresist, which becomes soluble by ultraviolet irradiation, De
EpUV positive resist, electron beam resist, polystyrene, polypropylene, polymethyl methacrylate (P
It is preferred to use MMA) and their copolymers.

Conversely, when the resist film is insolubilized, the resist film is made of a polymer material that is insolubilized by the irradiation of ultraviolet light, and the resist film having the uneven shape formed by the uneven mold is irradiated with ultraviolet light so that only the lower portion of the resist film convex pattern is formed. Is a soluble non-denatured part, and the others are insoluble denatured parts.
When it is wet-etched, the non-denatured portion below the convex pattern dissolves in the etching solution, so that the convex pattern portion is separated from the substrate, and only the insoluble denatured concave pattern is formed as a resist pattern on the substrate. In this method, it is preferable to use a negative photoresist that becomes insoluble by ultraviolet irradiation, or a negative resist for DeepUV.

[0010] Further, as a method for improving the pressing conditions at the time of pressing the concavo-convex mold, a resist film which is modified by irradiation with ultraviolet rays is formed in the lower layer, and a resist film which is easy to be formed by the concavo-convex press is formed on the surface layer. There is a method of forming the film into a two-layer structure. In this case, a two-layer resist is formed on the substrate, and an uneven press is performed.
An uneven pattern is formed on the surface resist. By using the convex pattern of the resist film formed by the concavo-convex press as an ultraviolet mask, the resist under the resist film convex pattern is not affected by the ultraviolet irradiation, becomes a non-denatured portion, and becomes a lower layer of the resist film concave pattern. The resist becomes a denatured portion under the influence of ultraviolet irradiation. The denaturation by ultraviolet irradiation is performed by making the resist film soluble or insoluble as described above. When the resist is wet-etched, only the insoluble resist forms a resist pattern on the substrate.

Further, in the method of forming the resist film into a two-layer structure, two kinds of resist film material films are preliminarily laminated and formed, and the two-layer film is laminated to a substrate to form a two-layer film. Forming a resist film with a structure not only simplifies the formation of the resist film, but also minimizes the consumption of the resist material, and makes the resist film uniform even on very large substrates. There is an advantage that can be formed.

In the method of forming the resist film into a two-layer structure, when the lower resist film is solubilized by ultraviolet rays, a positive photoresist,
It is preferable to use a positive resist for ePUV and a resist for electron beams. Alternatively, when insolubilizing,
In the lower resist film, a negative photoresist, Deep
It is desirable to use a negative resist for UV. In addition, the surface resist film is pressed by a concave-convex press.
It is preferable to use polyethylene, polystyrene, polypropylene, acrylic, or a copolymer thereof, which is easy to mold.

The advantage of the method of forming the resist film into a two-layer structure is that a material which can be easily press-formed by a concavo-convex mold can be used for the surface layer, and a material which is easily denatured by ultraviolet irradiation can be used for the lower layer. It is possible to improve the pressing conditions in the mold and the UV irradiation conditions such as UV intensity and irradiation time. However, the etching of the two-layer resist needs to be performed in two stages. for that reason,
In consideration of transfer conditions and productivity, it is important to appropriately select whether to transfer with a single-layer resist or with a two-layer resist.

In the above-described method of selectively modifying a resist film by ultraviolet irradiation, for example, when a small hole is formed in the entire substrate such as a hole such as a contact hole, the contact hole pattern is made uneven. Use a method of forming a convex pattern of a mold, pressing it, and modifying the solubilization by irradiating ultraviolet rays, and if you want to leave a small pattern as a convex pattern over the entire area of the substrate like a TFT pattern, Is formed into a concave-convex pattern and pressed, using a method of modifying the insolubilization by UV irradiation,
It is important to appropriately select the transfer method depending on the pattern. The reason for this is that the smaller the convex mold serving as the pressed portion is, the smaller the pressing load can be.

In the above method of selectively modifying a resist film by irradiation with ultraviolet light, productivity can be improved by simultaneously performing irradiation with ultraviolet light and wet etching.

In the transfer of a pattern having a relatively large pattern size, a dummy pattern in which irregularities smaller than the pattern size are formed in addition to the irregularities of the pattern shape to be transferred is formed on an irregularity mold used for pressing. When pressing is performed, the area of the pressed portion can be reduced, and the pressing load can be significantly reduced. It is preferable to use a small pattern of about 以下 or less of the pattern to be transferred as the dummy pattern. However, in the method using the dummy pattern, the transfer accuracy is slightly deteriorated by the dummy pattern, so that it is difficult to use a fine pattern on the order of several μm. For example, Equation 10 to Equation 1
This is effective for relatively large patterns on the order of 00 μm.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described with reference to the drawings. A method of selectively modifying a resist film by ultraviolet irradiation will be described with reference to FIGS. Referring to FIG. 1, the formation of a resist film will be described. Figure 1
In the above, 1 is a substrate, and this substrate 1 is made of a Si substrate, a glass substrate, a quartz substrate, or a laminated film of a metal such as a silicon nitride film, a silicon oxide film, amorphous silicon, and polycrystalline silicon on these substrates. It may be deposited. Reference numeral 2 denotes a resist film. The resist film is formed by applying a resist solution prepared by dissolving a resist material in a solvent to a rotated substrate 1 and performing a spin coating method.
Alternatively, it can be performed by a film sticking method in which a film of a resist material is directly stuck to the substrate 1. The resist film is resistant to acid chemicals used for etching the substrate or laminated film after pattern transfer according to the present invention, and is a thermoplastic resin that can be molded by an uneven heating press, and is modified by ultraviolet irradiation. Use a polymer material that also has When the resist film is solubilized by ultraviolet irradiation, a positive photoresist, Deep
Positive resist for pUV, electron beam resist, polystyrene, polypropylene, polymethyl methacrylate (PM
MA) and their copolymers. When the resist film is insolubilized by ultraviolet irradiation, a negative photoresist, DeepUV
It is desirable to use any one of the negative resists.

FIG. 2 shows a concavo-convex mold used for pressing.
The concavo-convex mold 3 has the same size as the substrate 1,
On one side, a pattern 4 having a convex pattern shape to be transferred is provided. The material of the concavo-convex mold is preferably a Si substrate, a glass substrate, or a quartz substrate, like the substrate 1. The concavo-convex pattern 3 can be manufactured by wet etching with an acid-based chemical such as hydrofluoric acid or dry etching after pattern transfer by photolithography. The pattern 4 is an example of a pattern to be transferred, and is appropriately selected according to a pattern shape to be transferred. Also, pattern 4
The depth of the convex portion is, for example, about 5 μm, and this depth is also appropriately selected depending on the thickness of the resist film 2 and the pressing conditions of the concave-convex mold. Further, in a case where welding of the resist film 2 to the concave-convex mold becomes a problem in the concave-convex mold pressing step, the surface of the concave-convex mold 3 may be coated with a fluorine-based resin.

Next, a process of pressing the concavo-convex mold 3 on the substrate 1 on which the resist film 2 is formed to form a concavo-convex pattern on the resist film 2 will be described with reference to FIG. FIG.
Shows a state in which the concavo-convex mold 3 having the pattern 4 is pressed against the resist film 2 formed on the substrate 1. 5
Is a heating press device, a pair of upper and lower hot plates 6,
And a mechanism for pressing while heating, such as sandwiching a sample between the upper and lower hot plates 6 and 6, and moving and pressing the upper hot plate downward. That is, the lower hot plate 6a and the upper hot plate 6b each have a built-in heater 6c, of which the lower plate 6a is fixed, while the upper plate 6b is attached to the columns 6d, 6d so as to be vertically movable. ing. The concave and convex mold 3 and the substrate 1 are pressed by the hot plates 6a and 6b. The hot plate is appropriately heated to a temperature at which the concavo-convex pattern can be easily formed. By pressing the concavo-convex mold 3 on the resist film 2 in this manner, a concavo-convex pattern can be formed on the resist film 2.

FIG. 4 shows the shape of the resist film 2 after pressing. Pressing forms a convex pattern 7 and a concave pattern 8 on the resist film 2.

After the convex pattern 7 and the concave pattern 8 are formed on the resist film 2 in this manner, the resist film 2 is irradiated with ultraviolet rays. FIG. 5 shows the ultraviolet irradiation step. Reference numeral 9 denotes an ultraviolet lamp. The resist film 2 on which the concavo-convex pattern is formed by the previous press is irradiated with ultraviolet rays. The ultraviolet light used here is preferably from 200 to 400 nm, which is a wavelength at which the resist film 2 is easily denatured. When a resist film that is solubilized by irradiation with ultraviolet rays is used, denaturation (solubilization) occurs such that the main chain or side chain is broken. When a resist film that is insolubilized by ultraviolet irradiation is used, denaturation (insolubilization) occurs in a portion that has absorbed ultraviolet light.

Since the modification by irradiation with ultraviolet light starts from the surface of the resist film irradiated with ultraviolet light, by controlling the irradiation time and intensity of the ultraviolet light, the resist film 2 can selectively have a modified portion and a non-modified portion. Can be formed. That is, FIG. 7 shows the denatured portion 10 and the non-denatured portion 11 of the resist film 2 after the irradiation of the ultraviolet rays. Thus, all the concave patterns 8 become the denatured portions 10, and the surface side of the convex pattern 7 is the denatured portion. 10, the non-denatured portion 11 is not denatured on the substrate side of the convex pattern because ultraviolet light does not reach it.

Thereafter, as shown in FIG. 7, the substrate 1 is immersed in an etching solution 12 for a resist film contained in a container 13 to perform wet etching. When a resist film that is solubilized by ultraviolet irradiation is used, the denatured (solubilized) portion 10 of the resist film is dissolved in the etchant, but the non-denatured portion 11 is not dissolved in the etchant and remains on the substrate.
That is, as shown in FIG. 8, after the wet etching, only the convex pattern of the non-denatured portion 11 of the resist film remains on the substrate 1 as a pattern. Conversely, when a resist film that is insolubilized by ultraviolet irradiation is used, wet etching dissolves the resist in the non-denatured portion 11. When the resist in the non-denatured portion 11 is dissolved, the resist film thereon is also separated from the substrate 1. Therefore, only the resist in which the resist concave portions are modified (insolubilized) remains as a pattern on the substrate.

FIG. 10 shows a method of simultaneously performing ultraviolet irradiation and wet etching. As described above, the resist film 2
After forming a concavo-convex pattern on the resist film by pressing the concavo-convex mold 3, the substrate 1 is immersed in the etching solution 12, and at the same time, ultraviolet irradiation is performed by an ultraviolet lamp 9 to denature (solubilize) the resist film surface. Dissolve the part with the etchant, or
The part that has not been denatured (insolubilized) is dissolved. When the ultraviolet irradiation and the wet etching are performed at the same time, the process can be simplified.

A method using a two-layered resist will be described with reference to FIGS. Referring to FIG. 11, the formation of a resist film will be described. In FIG.
1 is a substrate, 2 and 14 are resist films. The lower resist film 2 is solubilized by the aforementioned ultraviolet irradiation,
Alternatively, any one of the resist films that cause insolubilization modification is used, and the surface resist film 14 is made of polyethylene, polystyrene, polypropylene, acrylic, or any of their copolymers, which can be easily formed by a concave-convex press. use. This resist film formation can be performed by a spin coating method as in the case of the above-described single resist film, but two spin coatings are required to form two layers. On the other hand, in a method in which a film of a resist material is directly attached to the substrate 1 by a film attaching method, if a resist film having a two-layer structure is prepared in advance, it is only necessary to attach the film, and thus productivity is high. Furthermore, there is an advantage that the consumption of the resist material can be minimized by attaching the resist film, and the resist film can be formed with a uniform film thickness even on a large-area substrate. Thus, a resist film having a two-layer structure is formed by either the spin coating method or the film sticking method.

The resist film having the two-layer structure thus formed on the substrate is pressed by the concavo-convex mold 3 as shown in FIG. FIG. 12 shows the resist film after the pressing. The convex pattern 7 and the concave pattern 8 are formed on the surface resist film 14 of the two-layer resist.

The resist film on which the concavo-convex pattern is formed is irradiated with ultraviolet rays in the same manner as above. FIG. 13 shows a resist film selectively modified by ultraviolet irradiation.
Ultraviolet rays pass through the concave pattern 8 of the surface resist film 14, and the denatured portion 10 is generated in the lower resist film 2. On the other hand, the resist film 2 under the convex pattern 7 of the resist film 14 becomes the non-denatured portion 11 without reaching the ultraviolet rays.

After the lower resist film 2 is selectively denatured by the irradiation of ultraviolet rays, wet etching is performed as shown in FIG. When performing etching, first, the surface resist film 14 is etched with a dedicated etching solution. Next, the lower resist film 2 is etched. When the lower resist film 2 is etched, if a resist film solubilized by ultraviolet irradiation is used, the denatured portion 10 dissolves in the etchant, and the non-denatured portion 11 remains as a pattern on the substrate. When a resist that is insolubilized by ultraviolet irradiation is used, the non-denatured portion 11
Are dissolved in the etching solution, and the denatured portion 10 remains on the substrate as a pattern.

Next, a method of reducing the pressing load of the concave / convex mold using the dummy pattern will be described. FIG.
Reference numeral 4 denotes a concave-convex pattern 15 having a dummy pattern. The concavo-convex pattern 15 has a dummy pattern 17 so as to fill a convex portion of the concavo-convex pattern in addition to the pattern 16 to be transferred. The dummy pattern may have a line shape or a dot shape, but the pattern size must be finer than the pattern 16, and is preferably １ ／ or less of the size of the pattern 16.

Using a resist which is modified (solubilized) by irradiating ultraviolet rays onto the resist film as described above,
5 is pressed against the resist film 2 instead of the concavo-convex mold 3 shown in FIG. Alternatively, pressing is performed on the resist film having the two-layer structure shown in FIG. By pressing, a fine convex pattern 18 formed of a dummy pattern other than the convex pattern 7 to be transferred is formed on the resist film 2 as shown in FIG. In the case of a two-layer resist film, similarly, a fine convex pattern 18 formed by a dummy pattern other than the convex pattern 7 to be transferred is formed on the surface resist film 14. When the resist film 2 or 14 formed as described above is irradiated with ultraviolet light, the convex pattern 18 formed by the dummy pattern becomes the denatured portion 10 by the ultraviolet light as shown in FIG. The side becomes the non-denatured part 11 because the ultraviolet rays hardly reach. By performing wet etching on this, as a result, as shown in FIG.
The convex pattern 11 of the resist film can be left thereon.

The method using this dummy pattern is more
This is effective when you want to reduce the press load. For example,
As mentioned earlier, the pattern transfer area is smaller than the total substrate area.
Compared to very small or large
Where the pattern and non-pattern areas are half
In each case, or in a large size where the resist is difficult to deform
Press load is very large like pattern transfer
It is effective when it becomes. For example, for the entire area of the substrate,
If the transferred pattern is half the area, press
Therefore, it is necessary to press half the area of the entire substrate.
You. For forming an uneven pattern by an uneven press
100kgf / cm to form a convex pattern ²Uneven type
If a pressing pressure of 1m × 1m is required,
100 kgf / cm for size imprint²× 1
00cm × 100cm × 0.5 = 500,000kgf
= 500t of press load is required. However,
By forming the mee pattern 17 on the concave and convex mold 15,
Reduce the pressing area of the mold projection to about half,
The load can be reduced to about 250t, reducing the press load by about half.
It is possible to reduce the uneven pattern by pressing
Formation can be facilitated.

A method using thermal denaturation instead of ultraviolet irradiation will be described. In the step of pressing the concavo-convex mold 3 onto the resist film 2 in FIG. 3, the heater 6c is set so that the concavo-convex mold 3 is at the thermal degradation temperature of the resist film, and the concavo-convex mold 3 is pressed against the resist film. For example, in the case of polystyrene, the temperature may be set to about 230 ° C., which is the thermal deterioration temperature. As a result, similarly to the case of denaturation by ultraviolet irradiation, the denatured portion 10 and the non-denatured portion 11 can be selectively formed on the resist film 2 as shown in FIG.
As shown in FIG. 7, pattern transfer can be performed by performing wet etching. As a method using such thermal denaturation, not only the concavo-convex mold 3 but also the heater 6c is set so that the substrate 1 is at the thermal degradation temperature of the resist film. The temperature may be set to the thermal degradation temperature of the polymer material used in the step (a), and the mold may be pressed against the resist film. In this method, however, the resist film 2 of the mold 3 is used so that the entire resist film 2 is not denatured.
It is necessary to pay attention to the press time.

[0033]

EXAMPLE 1 A 6 μm-thick styrene-based resin resist film was formed on the surface of a 20 mm square, 0.6 mm thick Si substrate by spin coating. The resist film of this substrate has the same size as the Si substrate, 20 mm square, 0.6 mm thick.
A mold having a circuit pattern shape having a minimum line width of 10 μm on one side and a concave pattern having a depth of 6 μm is provided at a temperature of 200 ° C. and a pressing pressure of 100 kg.
Pressed at f / cm ² . After pressing, the resist film
A convex pattern having a circuit pattern shape was formed. The resist film was irradiated with ultraviolet rays by an ultraviolet lamp having a wavelength of 254 nm. Thereafter, xylene was used as an etchant, and the substrate was immersed in the etchant to perform wet etching. As a result, it was confirmed that only the convex pattern of the circuit pattern shape remained on the Si substrate. Then, using the above-mentioned convex pattern as a mask, S
The i-substrate was etched. As the etchant, hydrofluoric acid mixed with a volume ratio of hydrofluoric acid: nitric acid: acetic acid of 2: 5: 2 was used. The exposed surface of the Si substrate other than the remaining resist film was etched by wet etching in which the substrate was immersed in this etching solution. Thereafter, when the resist film was completely removed, the surface of the Si substrate on which the resist film remained remained unetched because the resist film served as a mask, and the other surface of the Si substrate was etched. Comparative Example A treatment was performed under the same conditions as in the example of the present invention except that ultraviolet irradiation was not performed and that cyclohexane, which is a good solvent for polystyrene, was used as an etching solution for the resist film. In this case, in wet etching of the resist film after pressing, the shape of the convex pattern formed by pressing is distorted, and pattern transfer was impossible.

[0034]

Example 2 A negative photoresist film having a thickness of 2.5 μm was formed on the surface of a 20 mm square Si substrate having a thickness of 0.6 mm by spin coating. The resist film of this substrate is the same size as the Si substrate, 20 mm square, 0.6 mm thick, and has a line width of 80 μm at 1 mm intervals on one side.
A mold having a grid pattern in which m line patterns were arranged and having a convex pattern with a line portion height of 5 μm was pressed at a temperature of 100 ° C. and a pressing pressure of 10 kgf / cm ² . After pressing, a concave pattern of a lattice pattern having a depth of about 1 μm was formed on the resist film. The resist film was irradiated with ultraviolet rays by an ultraviolet lamp having a wavelength of 254 nm. Thereafter, wet etching was performed with a dedicated developer for a negative photoresist. As a result, Si
It was confirmed that only the convex pattern of the lattice pattern remained on the substrate. Thereafter, the Si substrate was etched using the above-mentioned convex pattern as a mask. The volume ratio of hydrofluoric acid: nitric acid: acetic acid was 2: 5: 2 in the etching solution.
Was used. The exposed surface of the Si substrate other than the remaining resist film was etched by wet etching in which the substrate was immersed in this etching solution. Thereafter, when the resist film was completely removed, the surface of the Si substrate on which the resist film remained remained unetched because the resist film served as a mask, and the other surface of the Si substrate was etched.

[0035]

According to the present invention, as described above, when a circuit pattern is transferred onto a substrate, an uneven pattern is formed by pressing the uneven resist film, and then the resist film is irradiated with ultraviolet rays. By selectively modifying the resist film, or by selectively modifying the resist film by the uneven heating temperature at the time of the uneven press, it is possible to perform wet etching of the resist film, which has been difficult until now, Highly accurate and highly productive pattern transfer can be realized easily at low cost. Further, since the resist film which is solubilized or insolubilized by the irradiation of ultraviolet rays can be selected according to the pattern to be transferred, the conditions for forming the concavo-convex pattern of the resist film by the concavo-convex press can be extremely improved, and the productivity is expected to be improved. Further, when a resist film having a two-layer structure of a resist film which is easily modified by ultraviolet irradiation and a resist film which is easy to press-mold is used, depending on the transfer conditions, it is possible to further improve the pressing conditions in the concavo-convex mold and the ultraviolet irradiation conditions. . In addition, by using the method of the present invention by pressing with a concave-convex mold having a dummy pattern, the press load can be significantly reduced, and the manufacturing conditions can be improved and the equipment cost can be reduced.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a stage when a resist film is formed on a substrate surface.

FIG. 2 is an explanatory diagram of a concave-convex shape.

FIG. 3 is an explanatory view of a step of pressing a concavo-convex mold on a resist film.

FIG. 4 is an explanatory diagram of a resist film shape after a resist film is pressed by a concavo-convex mold.

FIG. 5 is an explanatory view of a step of irradiating a resist film with ultraviolet rays.

FIG. 6 is an explanatory diagram of a resist film after ultraviolet irradiation.

FIG. 7 is an explanatory diagram of a wet etching step.

FIG. 8 is an explanatory diagram of a resist film after wet etching when a resist film solubilized by ultraviolet irradiation is used.

FIG. 9 is an explanatory diagram of a resist film after wet etching when a resist film insolubilized by ultraviolet irradiation is used.

FIG. 10 is an explanatory diagram of a method of simultaneously performing ultraviolet irradiation and wet etching.

FIG. 11 is an explanatory diagram of a stage in which a resist film having a two-layer structure is formed on a substrate surface.

FIG. 12 is an explanatory diagram of a resist film shape after a two-layer resist film is pressed by a concavo-convex pattern.

FIG. 13 is an explanatory diagram of a resist film having a two-layer structure after ultraviolet irradiation.

FIG. 14 is an explanatory diagram of a concavo-convex type having a dummy pattern.

FIG. 15 is an explanatory diagram of a resist film after being pressed by a concavo-convex mold having a dummy pattern.

FIG. 16 is an explanatory diagram of a resist film after being pressed by a concave and convex mold having a dummy pattern and further irradiated with ultraviolet rays.

FIG. 17 is an explanatory diagram of a resist film after being pressed by a concave and convex mold having a dummy pattern, irradiated with ultraviolet rays, and then subjected to wet etching.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate 2 Resist film 3 Concavo-convex type 4 Concavo-convex convex part 7 Convex pattern of resist film 8 Concave pattern of resist film 9 Ultraviolet lamp 10 Modified part of resist film 11 Non-denatured part of resist film 12 Etching solution 13 Container 14 Surface layer Resist film 15 Concavo-convex pattern having dummy pattern 16 Transfer pattern 17 Dummy pattern 18 Dummy pattern of resist film formed by dummy pattern type

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01J 9/02 H01J 9/02 R H01L 21/30 561 (72) Inventor Kenichiro Kida Bomarumachi, Matsuto City, Ishikawa Prefecture Address 3 F term (reference) 2H025 AB16 AC01 AC04 AD01 AD03 DA13 FA01 FA03 FA15 2H096 AA25 BA01 BA09 CA16 DA10 EA02 EA03 EA30 GA02 JA02 KA02 5C027 AA01 BB01 5F046 AA28 BA10

Claims (8)

[Claims] When transferring a circuit pattern onto a substrate,
In pattern transfer in semiconductor device manufacturing, in which a polymer material resist film formed on a substrate is pressed by a concavo-convex mold having concaves and convexes, the convex and concave pattern portions of the resist film formed by the concavo-convex press are formed. A pattern transfer method in the manufacture of semiconductor devices, characterized in that a resist film is irradiated with ultraviolet light by using the resist film as an ultraviolet mask to selectively form a modified portion and a non-modified portion in the resist film. 2. When solubilizing either a modified part or a non-denatured part of the resist film, the resist film includes a positive photoresist, a deep UV positive resist,
2. The pattern transfer method according to claim 1, wherein an electron beam resist, polystyrene, polypropylene, polymethyl methacrylate (PMMA) and a copolymer thereof are used. 3. The method according to claim 1, wherein when solubilizing either the denatured part or the non-denatured part of the resist film, a negative photoresist or a deep UV negative resist is used for the resist film. A pattern transfer method in the manufacture of a semiconductor device according to the above. 4. A resist film having a two-layer structure in which a lower resist film which is denatured by ultraviolet irradiation is formed on the substrate side, and a surface resist film is formed on the surface layer by an uneven press. A pattern transfer method for manufacturing a semiconductor device according to claim 1. 5. The semiconductor device according to claim 1, wherein a film of at least two types of resist film materials is bonded to a substrate, and a resist film having a multilayer structure is formed. Pattern transfer method in manufacturing. 6. The pattern transfer method according to claim 1, further comprising irradiating the substrate with an etching solution and irradiating the substrate with ultraviolet light after forming an uneven pattern on the resist film by an uneven press. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the pressing is performed using an uneven mold having a dummy pattern in which unevenness smaller than the pattern size is formed in addition to the unevenness of the pattern shape to be transferred. Pattern transfer method. 8. When transferring a circuit pattern onto a substrate,
In pattern transfer in semiconductor device manufacturing, in which a resist film of a polymer material formed on a substrate is pressed by a concave / convex pattern having irregularities, either the irregular pattern or the substrate, or both, are used as resist films. Pattern transfer in semiconductor device manufacturing characterized by selectively forming a denatured portion and a non-denatured portion on a resist film by setting the thermal degradation temperature of the molecular material and pressing the uneven resist film. Method.