JP2002156652A5 - - Google Patents

Description

Patent application title: Electro-optical device, method of manufacturing the same, and projector

[0008]
[Means for Solving the Problems]
In order to solve the above-described problems, the electro-optical device according to the present invention includes a pixel electrode, a thin film transistor disposed corresponding to the pixel electrode, and a wiring connected to the thin film transistor on a substrate, A semiconductor film pattern including a channel region of the thin film transistor is disposed in a trench formed in a substrate, and a dummy pattern is formed on the side of the semiconductor film pattern in the trench.

[0042]
Another electro-optical device according to the present invention includes a pixel electrode, a thin film transistor disposed corresponding to the pixel electrode, and a wiring connected to the thin film transistor on a substrate. A semiconductor film pattern including a channel region of the thin film transistor is disposed in a trench dug in the substrate, and a light absorbing film is formed in the trench beside the semiconductor film pattern.

Claims (15)

On the board
A pixel electrode,
A thin film transistor disposed corresponding to the pixel electrode;
And a wire connected to the thin film transistor,
A semiconductor film pattern including a channel region of the thin film transistor is disposed in a groove dug in the substrate,
An electro-optical device, wherein a dummy pattern is formed on the side of the semiconductor film pattern in the groove. The electro-optical device according to claim 1, wherein the dummy pattern is disposed on both sides of the semiconductor film pattern in the groove. The electro-optical device according to claim 1, wherein the dummy pattern is disposed on a side wall of the groove. The electro-optical device according to any one of claims 1 to 3, wherein the dummy pattern is disposed on a bottom of the groove. The electro-optical device according to any one of claims 1 to 4, wherein the dummy pattern is made of the same film as the semiconductor film pattern. The electro-optical device according to any one of claims 1 to 5, wherein the dummy pattern has a conductivity that is at least partially lower than that of the semiconductor film pattern. The wire includes a scan line connected to a gate electrode disposed opposite to the channel region,
7. The electro-optical device according to claim 6, wherein the dummy pattern has low conductivity at least in a portion facing the scanning line. The wire includes a scan line connected to a gate electrode disposed opposite to the channel region,
The electro-optical device according to any one of claims 1 to 6, wherein the dummy pattern is disposed so as to avoid a planar region facing the scanning line. The dummy pattern also functions as one of a pair of capacitance electrodes that form a storage capacitance with respect to the pixel electrode,
The electro-optical device according to any one of claims 1 to 8, further comprising: another electrode disposed opposite to the dummy pattern via a dielectric film. 10. The electro-optical device according to claim 9, wherein the dummy pattern is extended from the drain region of the semiconductor film pattern, and the one electrode is a pixel potential side capacitance electrode. 11. The electro-optical device according to claim 9, wherein the other electrode is made of a light shielding film containing a metal or an alloy. The wire includes a scan line connected to a gate electrode disposed opposite to the channel region,
12. The electricity according to any one of claims 9 to 11, wherein the other electrode is located on the substrate above the one electrode and below the scanning line. Optical device. A method of manufacturing an electro-optical device for manufacturing the electro-optical device according to any one of claims 1 to 12,
Digging a groove in the substrate;
A method of manufacturing an electro-optical device, comprising the steps of: simultaneously forming the semiconductor film pattern and the dummy pattern by photolithography and etching using the same resist in the groove. On the board
A pixel electrode,
A thin film transistor disposed corresponding to the pixel electrode;
And a wire connected to the thin film transistor,
A semiconductor film pattern including a channel region of the thin film transistor is disposed in a groove dug in the substrate,
An electro-optical device, wherein a light absorbing film is formed on the side of the semiconductor film pattern in the groove. A projector using the electro-optical device according to any one of claims 1 to 12 as a light valve.