JP2002151639A5

JP2002151639A5 -

Info

Publication number: JP2002151639A5
Application number: JP2001252275A
Authority: JP
Filing date: 2001-08-23
Publication date: 2004-07-29
Anticipated expiration: 2017-12-16

Description

【発明の名称】電子機器およびその製造方法 INDUSTRIAL APPLICABILITY The title of the invention: an electronic device and a method for manufacturing the same .

【０００４】
本発明の目的は、Ｐｂフリーはんだ、例えばＳｎ−Ａｇ−Ｂｉ系のＰｂフリーはんだによって、半導体装置と実装基板が高信頼性を有して接続された電子機器を提供することである。 0004
An object of the present invention is to provide an electronic device in which a semiconductor device and a mounting substrate are connected with high reliability by Pb-free solder, for example, Sn-Ag-Bi-based Pb-free solder.

【０００５】
【課題を解決するための手段】
上記目的を達成するために、本願で開示される発明の一例は次の通りである。
基板と、Ｃｕ系リードを有し、前記Ｃｕ系リード上に表面層としてＳｎ―Ｂｉ系層が直接形成され、前記Ｓｎ―Ｂｉ系層におけるＢｉ含有量が１重量％以上４重量％未満である半導体装置と、前記基板と前記半導体装置を接続する鉛フリーはんだにより形成された半田接続部と、を有することを特徴とする電子機器である。
また、基板と、Ｆｅ―Ｎｉ系合金リードを有し、前記Ｆｅ―Ｎｉ系合金リード上にＳｎにＢｉを１重量％以上４重量％未満含有させたＳｎ―Ｂｉ系層が形成され、前記Ｆｅ―Ｎｉ系合金リードと前記Ｓｎ―Ｂｉ系層の間には他の金属層が形成されていない半導体装置と、前記基板と前記半導体装置を接続する鉛フリーはんだにより形成された半田接続部と、を有することを特徴とする電子機器である。また、基板と、Ｆｅ―Ｎｉ系合金リードを有し、前記Ｆｅ―Ｎｉ系合金リード上にＣｕ層が形成され、前記Ｃｕ層上に表面層としてＳｎ―Ｂｉ系層が形成され、さらに前記Ｓｎ―Ｂｉ系層におけるＢｉ含有量が１重量％以上４重量％未満である半導体装置と、前記基板と前記半導体装置を接続する鉛フリーはんだにより形成された半田接続部と、を有することを特徴とする電子機器である。 0005
[Means for solving problems]
An example of the invention disclosed in the present application in order to achieve the above object is as follows.
It has a substrate and a Cu-based lead, and a Sn—Bi-based layer is directly formed as a surface layer on the Cu-based lead, and the Bi content in the Sn—Bi-based layer is 1% by weight or more and less than 4% by weight. It is an electronic device characterized by having a semiconductor device and a solder connecting portion formed of lead-free solder connecting the substrate and the semiconductor device.
Further, a Sn—Bi-based layer having a substrate and a Fe—Ni-based alloy lead and containing 1% by weight or more and less than 4% by weight of Bi in Sn is formed on the Fe—Ni-based alloy lead, and the Fe is formed. -A semiconductor device in which no other metal layer is formed between the Ni-based alloy lead and the Sn-Bi-based layer, and a solder connection portion formed of lead-free solder connecting the substrate and the semiconductor device. It is an electronic device characterized by having. Further, it has a substrate and a Fe—Ni alloy lead, a Cu layer is formed on the Fe—Ni alloy lead, a Sn—Bi layer is formed as a surface layer on the Cu layer, and the Sn—Bi layer is further formed. -It is characterized by having a semiconductor device having a Bi content of 1% by weight or more and less than 4% by weight in the Bi-based layer, and a solder connecting portion formed of lead-free solder connecting the substrate and the semiconductor device. It is an electronic device to be used.

【００２４】
【実施例３】
本発明の電極構成は基板上の電極にも適用することができる。例えば、基板のはんだ付け性を向上させるためにはんだコートが効果的であるが、従来はＳｎ−Ｐｂはんだ、特にＳｎ−Ｐｂ共晶はんだ等のＰｂを含んだはんだを使用している。このため、コート用はんだのＰｂフリー化として、本発明のＳｎ−Ｂｉ層を用いることができる。また、通常、基板の電極はＣｕで形成されているため、Ｓｎ−Ａｇ−Ｂｉ系はんだを使用した場合に十分な接続強度を得ることができる。この構成を適用した例を示すが、回路基板であるガラスエポキシ基板上のＣｕパッド（Ｃｕ電極）に約５μｍ程度のＳｎ−８Ｂｉ層をローラーコートで作成した。このはんだ層を形成したために基板に対するぬれ性が向上し、且つ、接続強度も向上させることができた。
上記で説明した本発明にかかる実施例によれば、Ｐｂフリー材料として優れるＳｎ−Ａｇ−Ｂｉ系はんだに適する電極構造を実現することができる効果を奏する。また、本発明にかかる実施例によれば、リードフレーム等の電極に対して毒性の少ないＳｎ−Ａｇ−Ｂｉ系のＰｂフリーはんだ合金を用いて十分な接続強度を有し、且つ安定な接続界面を得ることができるＰｂフリーはんだ接続構造体を実現することができる効果を奏する。また、本発明にかかる実施例によれば、毒性の少ないＳｎ−Ａｇ−Ｂｉ系のＰｂフリーはんだ合金を用いて、電子部品、基板間の熱膨張係数の差、はんだ付け後の割基板作業、或いはプロービングテスト時の基板の反り、ハンドリング等によってはんだ接続部に発生する応力に耐え得る十分な接続強度を有し、且つ経時的にも安定な界面を得ることができるＰｂフリーはんだ接続構造体を備えた電子機器を実現することができる効果を奏する。
また、本発明にかかる実施例によれば、毒性の少ないＳｎ−Ａｇ−Ｂｉ系のＰｂフリーはんだ合金を用いて、例えば２２０〜２４０℃での十分なぬれ性を確保して十分なフィレットを形成して十分な接続強度を有し、また耐ウィスカー性等も確保することができる。また、本発明にかかる実施例によれば、電子部品をＳｎ−Ａｇ−Ｂｉ系はんだではんだ付けすることにより、十分な接続強度を有する界面が得られ、且つ、実用上十分なぬれ性も確保することができる。またウィスカー性についても問題無い。従って、環境にやさしいＰｂフリーの電気製品を従来と同じ設備、プロセスを使用して実現することができる効果を奏する。 0024
[Example 3]
The electrode configuration of the present invention can also be applied to electrodes on a substrate. For example, solder coating is effective for improving the solderability of the substrate, but conventionally, Sn-Pb solder, particularly solder containing Pb such as Sn-Pb eutectic solder is used. Therefore, the Sn-Bi layer of the present invention can be used as the Pb-free coating solder. Further, since the electrodes of the substrate are usually formed of Cu, sufficient connection strength can be obtained when Sn-Ag-Bi-based solder is used. An example in which this configuration is applied is shown. A Sn-8Bi layer having a size of about 5 μm was formed by roller coating on a Cu pad (Cu electrode) on a glass epoxy board which is a circuit board. Since this solder layer was formed, the wettability with respect to the substrate was improved, and the connection strength could also be improved.
According to the embodiment of the present invention described above, it is possible to realize an electrode structure suitable for Sn-Ag-Bi-based solder, which is excellent as a Pb-free material. Further, according to the embodiment of the present invention, a Sn-Ag-Bi-based Pb-free solder alloy having low toxicity to electrodes such as a lead frame is used to have sufficient connection strength and a stable connection interface. It is possible to realize a Pb-free solder connection structure capable of obtaining a Pb-free solder connection structure. Further, according to the embodiment of the present invention, using a Sn-Ag-Bi-based Pb-free solder alloy having less toxicity, the difference in thermal expansion coefficient between electronic parts and substrates, the split substrate work after soldering, Alternatively, a Pb-free solder connection structure having sufficient connection strength to withstand the stress generated in the solder connection portion due to warpage of the substrate during the probing test, handling, etc., and capable of obtaining a stable interface over time. It has the effect of realizing an electronic device equipped with it.
Further, according to the embodiment of the present invention, a Sn-Ag-Bi-based Pb-free solder alloy having low toxicity is used to secure sufficient wettability at, for example, 220 to 240 ° C. to form a sufficient fillet. Therefore, it has sufficient connection strength and can secure whisker resistance and the like. Further, according to the embodiment of the present invention, by soldering the electronic component with Sn-Ag-Bi-based solder, an interface having sufficient connection strength can be obtained, and sufficient wettability for practical use can be ensured. can do. There is also no problem with whiskers. Therefore, it is possible to realize an environment-friendly Pb-free electric product by using the same equipment and process as before.

【００２５】
本発明によれば、Ｐｂフリーはんだ、例えばＳｎ−Ａｇ−Ｂｉ系のＰｂフリーはんだと高信頼性を有する接続が得られる半導体装置を提供することができる。
本発明によれば、Ｐｂフリーはんだ、例えばＳｎ−Ａｇ−Ｂｉ系のＰｂフリーはんだによって、半導体装置と実装基板が高信頼性を有して接続された電子機器を提供することができる。 0025.
According to the present invention, it is possible to provide a semiconductor device capable of obtaining a highly reliable connection with Pb-free solder, for example, Sn-Ag-Bi-based Pb-free solder.
According to the present invention, it is possible to provide an electronic device in which a semiconductor device and a mounting substrate are connected with high reliability by using Pb-free solder, for example, Sn-Ag-Bi-based Pb-free solder.

Claims

A substrate,
A semiconductor device having a Cu-based lead, wherein a Sn-Bi-based layer is directly formed as a surface layer on the Cu-based lead, and a Bi content in the Sn-Bi-based layer is 1% by weight or more and less than 4% by weight An electronic device characterized in that it is connected using a lead-free solder which is a member different from the Sn-Bi-based layer.

A substrate,
A semiconductor device having a Cu-based lead, wherein one Sn-Bi-based layer is formed on the Cu-based lead, and the Bi content in the Sn-Bi-based layer is 1% by weight or more and less than 4% by weight; An electronic device characterized in that it is connected using lead-free solder which is a member different from the Sn-Bi-based layer.

A substrate,
A semiconductor device having a Cu-based lead, wherein a Sn-Bi-based layer is directly formed as a surface layer on the Cu-based lead, and a Bi content in the Sn-Bi-based layer is 1% by weight or more and less than 4% by weight ,
An electronic device comprising: a solder connection portion formed of lead-free solder for connecting the substrate and the semiconductor device.

A substrate,
A Sn-Bi-based layer having a Cu-based lead and containing Bi in an amount of 1% by weight or more and less than 4% by weight is formed on the Cu-based lead, and between the Cu-based lead and the Sn-Bi-based layer A semiconductor device on which no other metal layer is formed,
An electronic device comprising: a solder connection portion formed of lead-free solder for connecting the substrate and the semiconductor device.

A substrate,
It has a Fe-Ni based alloy lead, and a Sn-Bi based layer is directly formed as a surface layer on the Fe-Ni based alloy lead, and the Bi content in the Sn-Bi based layer is 1 wt% to 4 wt%. An electronic apparatus characterized in that a semiconductor device having a length smaller than the semiconductor device is connected using a lead-free solder which is a member different from the Sn-Bi-based layer.

A substrate,
It has a Fe-Ni based alloy lead, one Sn-Bi based layer is formed on the Fe-Ni based alloy lead, and the Bi content in the Sn-Bi based layer is 1% by weight or more and less than 4% by weight An electronic apparatus characterized in that a semiconductor device is connected using lead-free solder which is a member different from the Sn-Bi-based layer.

A substrate,
It has a Fe-Ni based alloy lead, and a Sn-Bi based layer is directly formed as a surface layer on the Fe-Ni based alloy lead, and the Bi content in the Sn-Bi based layer is 1 wt% to 4 wt%. A semiconductor device which is less than
An electronic device comprising: a solder connection portion formed of lead-free solder for connecting the substrate and the semiconductor device.

A substrate,
A Sn—Bi based layer having an Fe—Ni based alloy lead and containing Bi in an amount of 1% to 4% by weight on Sn is formed on the Fe—Ni based alloy lead, and the Fe—Ni based alloy lead A semiconductor device in which another metal layer is not formed between the first and second Sn—Bi based layers;
An electronic device comprising: a solder connection portion formed of lead-free solder for connecting the substrate and the semiconductor device.

A substrate,
It has a Fe-Ni based alloy lead, a Cu layer is formed on the Fe-Ni based alloy lead, a Sn-Bi based layer is formed on the Cu layer as a surface layer, and the Sn The semiconductor device having a Bi content in the Bi-based layer of 1% by weight or more and less than 4% by weight is connected using a lead-free solder which is a member different from the Sn-Bi-based layer. machine.

A substrate,
It has a Fe-Ni based alloy lead, a Cu layer and a Sn-Bi based layer are formed on the Fe-Ni based alloy lead, the Cu layer is covered with the Sn-Bi based layer, and further the Sn-Bi based layer. An electronic device comprising: a semiconductor device having a Bi content in a system layer of 1% by weight or more and less than 4% by weight, and a lead-free solder which is a member different from the Sn—Bi system layer.

A substrate,
It has a Fe-Ni based alloy lead, a Cu layer is formed on the Fe-Ni based alloy lead, a Sn-Bi based layer is formed as a surface layer on the Cu layer, and further, in the Sn-Bi based layer A semiconductor device having a Bi content of 1% by weight or more and less than 4% by weight;
An electronic device comprising: a solder connection portion formed of lead-free solder for connecting the substrate and the semiconductor device.

A substrate,
A Sn-Bi-based layer having an Fe-Ni-based alloy lead and containing Bi in an amount of 1% by weight or more and less than 4% by weight on Sn is formed on the Fe-Ni-based alloy lead. A semiconductor device in which a Cu layer is formed between an alloy lead and the Sn-Bi based layer;
An electronic device comprising: a solder connection portion formed of lead-free solder for connecting the substrate and the semiconductor device.

The electronic device according to any one of claims 1 to 12, wherein the Sn-Bi based layer is a plating layer.

The electronic device according to any one of claims 1 to 12, wherein the Sn-Bi based layer is a layer formed by dipping.

The electronic device according to any one of claims 1 to 14, wherein the lead-free solder contains Bi.

The electronic device according to any one of claims 1 to 14, wherein the lead-free solder is a Sn-Ag-Bi lead-free solder.

The electronic device according to any one of claims 1 to 14, wherein the lead-free solder contains Sn as a main component and contains Bi, Ag, and Cu.

The electronic device according to claim 17, wherein the lead-free solder contains Sn as a main component, 5 wt% to 25 wt% of Bi, 1.5 wt% to 3 wt% of Ag, and 1 Cu. An electronic device characterized by containing at most weight percent.

The electronic device according to any one of claims 1 to 18, wherein the semiconductor device is a TSOP type semiconductor device.

The electronic device according to any one of claims 1 to 18, wherein the semiconductor device is a QFP type semiconductor device.

A substrate,
A semiconductor device having a Cu-based lead, wherein a Sn-Bi-based layer is directly formed as a surface layer on the Cu-based lead, and a Bi content in the Sn-Bi-based layer is 1% by weight or more and less than 4% by weight And a lead-free solder which is a member different from the Sn-Bi-based layer.

A substrate,
A Sn-Bi-based layer having a Cu-based lead and containing Bi in an amount of 1% by weight or more and less than 4% by weight is formed on the Cu-based lead, and between the Cu-based lead and the Sn-Bi-based layer A method of manufacturing an electronic device, comprising: connecting a semiconductor device having no other metal layer formed thereon using a lead-free solder which is a member different from the Sn—Bi based layer.

A method of manufacturing an electronic device, in which a substrate and a semiconductor device having a Cu-based lead are connected by soldering.
In the semiconductor device, a Sn—Bi based layer is directly formed as a surface layer on the substrate and the Cu based lead, and the Bi content in the Sn—Bi based layer is 1% by weight or more and less than 4% by weight. A method of manufacturing an electronic device, wherein a lead-free solder is brought into contact with both the electrode of the substrate and the Sn-Bi-based layer for soldering connection.

A method of manufacturing an electronic device, in which a substrate and a semiconductor device having a Cu-based lead are connected by soldering.
An electrode of the substrate and the Sn-Bi-based semiconductor device, wherein the substrate and the Sn-Bi-based layer in which 1% by weight or more and 4% by weight or less of Bi are contained in Sn are formed on the substrate and the Cu-based lead A method of manufacturing an electronic device, wherein lead-free solder is brought into contact with both layers and soldered and connected.

Preparing a semiconductor device and a substrate for mounting the semiconductor device;
Preparing a lead-free solder connecting the semiconductor device and the substrate;
Solder-connecting the substrate and the semiconductor device with the lead-free solder;
In the soldering process,
Before the Sn-Bi-based layer is directly formed as a surface layer on the substrate and the Cu-based lead, and the Bi content in the Sn-Bi-based layer is 1% by weight or more and less than 4% by weight A method of manufacturing an electronic device, wherein the lead-free solder is brought into contact with both the electrode of the substrate and the Sn-Bi-based layer of the semiconductor device, and the semiconductor device is connected by soldering.

A substrate,
It has a Fe-Ni based alloy lead, and a Sn-Bi based layer is directly formed as a surface layer on the Fe-Ni based alloy lead, and the Bi content in the Sn-Bi based layer is 1 wt% to 4 wt%. A method of manufacturing an electronic device, comprising: connecting a semiconductor device having a length smaller than the semiconductor device using a lead-free solder which is a member different from the Sn-Bi-based layer.

A substrate,
On the Fe-Ni alloy lead is formed a Sn-Bi-based layer containing Bi in an amount of 1% by weight or more and less than 4% by weight to Sn, and between the Fe-Ni-based alloy lead and the Sn-Bi-based layer And the semiconductor device in which no other metal layer is formed on the
A method of manufacturing an electronic device comprising: connecting using a lead-free solder which is a member different from the Sn-Bi-based layer.

A method of manufacturing an electronic device, in which a substrate and a semiconductor device having an Fe-Ni based alloy lead are connected by soldering.
The semiconductor described above, wherein a Sn—Bi based layer is directly formed as a surface layer on the substrate and the Fe—Ni based alloy lead, and the Bi content in the Sn—Bi based layer is 1% by weight or more and less than 4% by weight A method of manufacturing an electronic device, wherein a device is soldered by bringing a lead-free solder into contact with both the electrode of the substrate and the Sn—Bi based layer.

A method of manufacturing an electronic device, in which a substrate and a semiconductor device having an Fe-Ni based alloy lead are connected by soldering.
An electrode of the substrate and the Sn in the semiconductor device, wherein the substrate and the Sn-Bi-based layer in which 1 wt% to 4 wt% of Bi is contained in Sn are formed on the Fe-Ni alloy lead. -Connect lead-free solder to both Bi-based layers and connect them by soldering A method of manufacturing an electronic device characterized in that.

Preparing a semiconductor device and a substrate for mounting the semiconductor device;
Preparing a lead-free solder connecting the semiconductor device and the substrate;
Solder-connecting the substrate and the semiconductor device with the lead-free solder;
In the soldering process,
The semiconductor device, wherein a Sn—Bi based layer is directly formed as a surface layer on the substrate and the Fe—Ni based alloy lead, and the Bi content in the Sn—Bi based layer is 1% by weight or more and less than 4% by weight And a lead-free solder is brought into contact with both the electrode of the substrate and the Sn-Bi-based layer for solder connection.

A substrate,
It has a Fe-Ni based alloy lead, a Cu layer is formed on the Fe-Ni based alloy lead, a Sn-Bi based layer is formed as a surface layer on the Cu layer, and further, in the Sn-Bi based layer A method of manufacturing an electronic device, comprising connecting a semiconductor device having a Bi content of 1% by weight or more and less than 4% by weight using a lead-free solder which is a member different from the Sn—Bi based layer.

A substrate,
It has a Fe-Ni based alloy lead, a Cu layer and a Sn-Bi based layer are formed on the Fe-Ni based alloy lead, the Cu layer is covered with the Sn-Bi based layer, and further the Sn-Bi based layer. Manufacture of an electronic device characterized in that a semiconductor device having a Bi content in the base layer of 1% by weight or more and less than 4% by weight is connected using a lead-free solder which is a member different from the Sn-Bi base layer. Method.

A method of manufacturing an electronic device, in which a substrate and a semiconductor device having an Fe-Ni based alloy lead are connected by soldering.
A Cu layer is formed on the substrate and the Fe-Ni alloy lead, an Sn-Bi-based layer is formed on the Cu layer as a surface layer, and a Bi content in the Sn-Bi-based layer is 1 weight A method of manufacturing an electronic device, wherein the semiconductor device having a% or more and less than 4% by weight is soldered by bringing a lead-free solder into contact with both the electrode of the substrate and the Sn—Bi based layer.

A method of manufacturing an electronic device, in which a substrate and a semiconductor device having an Fe-Ni based alloy lead are connected by soldering.
An Sn-Bi-based layer in which Bi is contained in an amount of 1% by weight or more and less than 4% by weight is formed on the substrate and the Fe-Ni-based alloy lead, and further, the Fe-Ni-based alloy lead and the Sn-- Electronic device characterized in that the semiconductor device having a Cu layer formed between Bi-based layers is connected by soldering lead-free solder in contact with both the electrode of the substrate and the Sn-Bi-based layer. Manufacturing method.

Preparing a semiconductor device and a substrate for mounting the semiconductor device;
Preparing a lead-free solder connecting the semiconductor device and the substrate;
Solder-connecting the substrate and the semiconductor device with the lead-free solder;
In the soldering process,
A Cu layer is formed on the substrate and the Fe-Ni alloy lead, a Sn-Bi-based layer is formed on the Cu layer as a surface layer, and a Bi content in the Sn-Bi-based layer is 1% by weight A method of manufacturing an electronic device, wherein the semiconductor device having a content of less than 4% by weight is connected by soldering a lead-free solder in contact with both the electrode of the substrate and the Sn—Bi based layer.

The method of manufacturing an electronic device according to any one of claims 21 to 35, wherein the Sn-Bi based layer is a plating layer.

A method of manufacturing an electronic device according to any one of claims 21 to 35, wherein A method of manufacturing an electronic device, wherein the Sn—Bi based layer is a layer formed by dipping.

The method of manufacturing an electronic device according to any one of claims 21 to 37, wherein the lead-free solder contains Bi.

The method of manufacturing an electronic device according to any one of claims 21 to 37, wherein the lead-free solder is a Sn-Ag-Bi lead-free solder.

The method of manufacturing an electronic device according to any one of claims 21 to 37, wherein the lead-free solder contains Sn, as a main component, and contains Bi, Ag, and Cu. Method.

41. A method of manufacturing an electronic device according to claim 40, wherein the lead-free solder contains Sn as a main component, 5% by weight or more and 25% by weight or less of Bi, and 1.5% by weight or more and 3% by weight or less of Ag. A method of manufacturing an electronic device comprising 1% by weight or less of Cu.