JP2002151466A - ドライエッチング方法 - Google Patents

ドライエッチング方法

Info

Publication number
JP2002151466A
JP2002151466A JP2000340002A JP2000340002A JP2002151466A JP 2002151466 A JP2002151466 A JP 2002151466A JP 2000340002 A JP2000340002 A JP 2000340002A JP 2000340002 A JP2000340002 A JP 2000340002A JP 2002151466 A JP2002151466 A JP 2002151466A
Authority
JP
Japan
Prior art keywords
etching
gas
hole
dry etching
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000340002A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002151466A5 (enExample
Inventor
Hidenori Takeda
秀則 竹田
Ichiro Nakayama
一郎 中山
Tadashi Kimura
忠司 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2000340002A priority Critical patent/JP2002151466A/ja
Publication of JP2002151466A publication Critical patent/JP2002151466A/ja
Publication of JP2002151466A5 publication Critical patent/JP2002151466A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP2000340002A 2000-11-08 2000-11-08 ドライエッチング方法 Pending JP2002151466A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000340002A JP2002151466A (ja) 2000-11-08 2000-11-08 ドライエッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000340002A JP2002151466A (ja) 2000-11-08 2000-11-08 ドライエッチング方法

Publications (2)

Publication Number Publication Date
JP2002151466A true JP2002151466A (ja) 2002-05-24
JP2002151466A5 JP2002151466A5 (enExample) 2006-04-27

Family

ID=18814983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000340002A Pending JP2002151466A (ja) 2000-11-08 2000-11-08 ドライエッチング方法

Country Status (1)

Country Link
JP (1) JP2002151466A (enExample)

Similar Documents

Publication Publication Date Title
US12057329B2 (en) Selective etch using material modification and RF pulsing
US8337713B2 (en) Methods for RF pulsing of a narrow gap capacitively coupled reactor
CN109616413B (zh) 用于对蚀刻工艺进行先进的离子控制的方法和系统
KR100590370B1 (ko) 플라즈마 에칭 방법
US6093332A (en) Methods for reducing mask erosion during plasma etching
KR101291347B1 (ko) 기판에서 불소계 폴리머를 제거하기 위한 장치 및 그를위한 방법
TW201604958A (zh) 蝕刻處理方法
WO2010122459A2 (en) Method and apparatus for high aspect ratio dielectric etch
KR20140068055A (ko) 이중 챔버 구성의 펄스형 플라즈마 챔버
KR101593544B1 (ko) 스퍼터링 장치 및 스퍼터링 방법
CN100477104C (zh) 等离子体处理装置
CN113284786B (zh) 基片处理方法和基片处理装置
JP4382505B2 (ja) プラズマエッチング装置の誘電板の製造方法
KR102797229B1 (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
JP2002151466A (ja) ドライエッチング方法
MY149338A (en) Notch stop pulsing process for plasma processing system
JP3211391B2 (ja) ドライエッチング方法
JPH11121437A (ja) 真空処理装置
JP4373685B2 (ja) プラズマ処理方法
JP3739308B2 (ja) プラズマ処理方法
JP3208931B2 (ja) プラズマ処理装置とこれを用いたプラズマ処理方法
CN105355546A (zh) 一种氮化镓器件电极结构的制作方法及氮化镓器件
JP4004244B2 (ja) プラズマ処理方法
JP2006148179A (ja) 反応性イオンエッチング装置
JP2000077390A (ja) プラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060303

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060303

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060412

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080509

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20081224

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090119

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20090210

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091118