JP2002122999A - Exposing method, aligner and mask - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposing method by which two patterns in adjacent shot areas are accurately exposed at aimed positions, and to provide an aligner and a mask. SOLUTION: In the case of exposing gate electrode patterns G1 and G2 on a substrate P, a G layer mark Rg1 is exposed and formed together with the pattern G1 first, and a G layer mark Rg2 is exposed and formed in the vicinity of the pattern G1 together with the pattern G2, then the relative positions of the marks Rg1 and Rg2 are measured. Based on the measured result, the exposing positions of the patterns G1 and G2 are adjusted to expose the patterns G1 and G2. Since the relative positions of the patterns G1 and G2 are accurately obtained by measuring the relative positions of the marks Rg1 and Rg2, the patterns G1 and G2 are accurately exposed to the aimed positions.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an exposure method, an exposure apparatus, and a mask.

[0002]

2. Description of the Related Art When manufacturing a liquid crystal display, which has been widely used as a display element of a personal computer, a television receiver, or the like, a mask and a glass substrate coated with a photosensitive agent are fixed on a mask in a stationary state. A step of irradiating exposure light, transferring an image of a pattern formed on this mask onto a glass substrate via a projection optical system, and sequentially moving the glass substrate by steps to form a large screen by joining the patterns. -An and repeat type exposure apparatus is used.

When a composite pattern is formed by splicing a plurality of patterns using such an exposure apparatus, it is important to make the pattern shape (dimension) equal to a target value in all regions including the spliced portion. is there. Then, it is necessary to perform pattern management to make the pattern of the joint portion a shape (dimension) according to the target value.

[0004]

At this time, the relative position (distance) between adjacent patterns is measured at the joint portion, and the position of the pattern is adjusted based on the measurement result, thereby controlling the pattern of the joint portion. May be performed. For example, it is conceivable to perform pattern management by measuring the distance (relative position) between adjacent patterns at a joint as shown by a dimension L1 in FIG. 9 using a dimension measuring device such as a CD meter. However, the distance between patterns in adjacent shot areas cannot be measured accurately with a CD meter. This is because the CD meter measures a short dimension and has only a measurement range (a measurement unit window) corresponding to the short dimension.
For example, in the case of a liquid crystal element pattern, the dimension L1 in FIG.
It has a long dimension of at least 00 μm, and this long dimension is
In order to measure with a meter, it is necessary to measure while moving a probe or the like of a CD meter between adjacent patterns.
In this case, the distance between patterns cannot be accurately measured due to the occurrence of accumulated errors due to the movement. On the other hand, it is conceivable to use a dimension measuring device for measuring a long dimension. However, since the liquid crystal element pattern requires a very high measuring accuracy of about 0.05 μm, such a dimension measuring device for measuring a long dimension is used. It is difficult to achieve high measurement accuracy.

Further, as shown in FIG. 9, it is conceivable to measure a superposition error (L2 in the figure) between the patterns of the spliced portions and manage the pattern of the spliced portions. In many cases, the pattern shape is about 1 to 2 μm and the pattern shape after the development processing is rounded, and it is difficult to accurately measure the rounded shape even with a CD meter.

In some cases, different layers are exposed using a plurality of exposure apparatuses having different exposure regions. That is, as shown in FIG. 10, when exposing the 2nd layer by the exposure device having a small exposure area on the 1st layer having no spliced portion (or when the position of the spliced portion is different between the 1st layer and the 2nd layer). Exposure). In this case, if the superimposition of the B pattern of the second layer and the first layer is shifted, a joint error actually occurs between the A pattern and the B pattern of the second layer. I want to measure the positional relationship between the A and B patterns. However, also in this case, since the distance between the pattern A and the pattern B is a long dimension, it cannot be measured with a CD meter with high accuracy.

[0007] From the above, in order to improve the accuracy of pattern management at the joint portion, it is necessary to improve the long-dimension measurement accuracy of the CD meter or to increase a wide range (long-dimension pattern) by using a low vacuum SEM or the like. Although there is no choice but to measure accurately, it cannot be easily realized in an actual production process due to an increase in cost.

The present invention has been made in view of such circumstances, and provides an exposure method, an exposure apparatus, and a mask capable of accurately exposing two patterns in adjacent shot areas to a target position. Aim.

[0009]

In order to solve the above-mentioned problems, the present invention employs the following structure corresponding to FIGS. 1 to 8 shown in the embodiment. According to the exposure method of the present invention, the first and second patterns (G1, SD1, G
2, SD2) by an exposure apparatus (EX), the first position detection mark (G1, SD1) is located in a predetermined area of the first pattern (G1, SD1) together with the first pattern (G1, SD1). Rg1, Rsd1) are formed by exposure, and at least a part of the second pattern (G1) is overlapped with or adjacent to the first pattern (G1, SD1).
2, SD2) and expose the second pattern (G
2, SD2) are formed by exposing a second position detection mark (Rg2, Rsd2) in a predetermined area, and a first position detection mark (Rg1, Rsd1) and a second position detection mark (Rg2) are formed. , Rsd2) is measured, and the exposure apparatus (EX) is adjusted based on the measurement result.

[0010] The exposure apparatus of the present invention provides the first and second patterns (G1, SD1, G2) at set positions on the substrate (P).
2, SD2), the first position detection mark (Rg1, Rsd1) is provided in a predetermined area of the first pattern (G1, SD1) together with the first pattern (G1, SD1). ) Is exposed, the second pattern (G2, SD2) is exposed by overlapping or adjoining at least a part of the first pattern (G1, SD1), and a predetermined pattern of the second pattern (G2, SD2) is exposed. Exposure parts (Ma-Md, EX, CONT) for exposing the second position detection marks (Rg2, Rsd2) in the area, and first positions exposed by the exposure parts (Ma-Md, EX, CONT) The first or second pattern (G1, SD1, G2, S) based on the positional relationship between the detection mark (Rg1, Rsd1) and the second position detection mark (Rg2, Rsd2).
D2), and a position adjusting unit (PST, MST, CONT) for adjusting the setting of at least one of the positions.

According to the present invention, the first and second position detecting marks (Rg1, Rsd1, Rg2, Rg) are provided together with the first and second patterns (G1, SD1, G2, SD2).
sd2) is formed on the substrate (P) by exposure, and the first and second position detecting marks (Rg1, Rsd1, Rg1) are formed.
2, Rsd2), the first and second patterns (G1, SD1, G2, SD2) are measured.
Can be accurately obtained. Then, by adjusting the exposure apparatus (EX) based on the measurement result, the first and second patterns (G1, SD1, G1) are adjusted.
2, SD2) can be accurately exposed to the target position.

The mask of the present invention is a mask (M) on which a pattern (PA) to be joined or overlapped for projecting a device pattern onto a substrate (P) using an exposure apparatus (EX) is formed. A mark (R) for measuring joint or overlay accuracy is provided in the pattern area of (M).

According to the present invention, the mark (R) for measuring the joint or overlay accuracy can be projected onto the substrate (P) together with the pattern (PA) of the mask (M). By using (R), the joining or overlaying accuracy can be measured.

According to the exposure method of the present invention, in a method of exposing a pattern (G, SD) to a set position on a substrate (P), the pattern (G, SD) is previously exposed on the substrate (P). Before the positioning mark (T) only the substrate (P)
The position of the positioning mark (T) is measured to determine the deformation of the substrate (P), and the position setting is adjusted based on the amount of deformation of the substrate (P).

According to the present invention, before exposing the pattern (G, SD), that is, before exposing the device pattern, a positioning mark (T) having no device function is formed in advance on the substrate (P). Since the position of the positioning mark (T) is measured to determine the deformation of the substrate (P) and the position for exposing the pattern (G, SD) is adjusted based on the determined amount of deformation, the post-order layer Exposure can be performed with high accuracy.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS << First Embodiment >> A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic configuration diagram of an exposure apparatus of the present invention.

As shown in FIG. 1, an exposure apparatus EX includes an illumination optical system IL for illuminating a light beam from a light source 1 onto a mask M (Ma to Md) held on a mask stage (position adjustment unit) MST. A blind portion B that is arranged in the illumination optical system IL and adjusts the area of the opening through which the exposure light EL passes to define the illumination range of the mask M (Ma to Md) by the exposure light EL, and is illuminated by the exposure light EL. Mask M (Ma-M
The projection optical system PL includes a projection optical system PL that projects the image of the pattern d) onto the substrate P on the substrate stage (position adjustment unit), and a dimension measurement device 8 that can measure the dimensions of the pattern formed on the substrate P. The operation of the entire exposure apparatus EX is controlled by a control unit (exposure unit,
Position adjustment unit) is performed based on the instruction of CONT.

As the light source 1, a mercury lamp is used.
As the exposure light EL, a g-line (436 nm) and an h-line (40
5 nm), i-line (365 nm) and the like.

The exposure light EL emitted from the light source 1 is condensed by the elliptical mirror 2, reflected by the return mirror 3a of the illumination optical system IL, and enters the optical unit IU constituting the illumination optical system IL. The optical unit IU includes a relay lens,
A plurality of optical integrators for equalizing the exposure light EL, an input lens for inputting the exposure light EL to the optical integrator, a relay lens for condensing the exposure light EL emitted from the optical integrator on the mask M, and a plurality of condenser lenses Lens (optical element).

As shown in FIG. 1, masks Ma to Md each having a pattern are mounted on a mask changer 7. The mask changer 7 is movably disposed above the mask stage MST, and
With respect to T, each of the masks Ma to Md can be loaded and unloaded.

The mask M to be mounted on the mask changer 7 is stored in a mask library (not shown).
To mount the mask M in the mask library on the mask changer 7, the mask M is loaded onto the mask stage MST by a loader (not shown) from the mask library, and the mask changer 7 receives the mask M on the mask stage MST. Mask M is mask changer 7
Mounted on On the other hand, in order to return the mask M mounted on the mask changer 7 into the mask library, the mask M is loaded from the mask changer 7 onto the mask stage MST, and the mask M on the mask stage MST is masked by the loader (not shown). Return to library.

Exposure light E emitted from the optical unit IU
L is reflected by the return mirror 3b and is reflected in the two-dimensional direction (XY
Stage (position adjustment unit) MS that can move
The light is incident on the mask M (Ma to Md) on T. Further, the exposure light EL transmitted through the mask M is incident on the projection optical system PL, is transmitted through a plurality of lenses (optical elements) constituting the projection optical system PL and is incident on the substrate P, and the image of the pattern of the mask M is formed. Is formed on the surface of the substrate P.

The substrate P has a surface coated with a photosensitive agent and is held by a substrate holder PH. The substrate holder PH for holding the substrate P is set on the substrate stage PST. The substrate stage PST is provided so as to be movable in the XYZ directions, and is provided so as to be rotatable around the Z axis. Further, by providing a mechanism that can also move in the tilt direction with respect to the optical axis AX of the exposure light EL, the substrate P
, The leveling adjustment of the substrate P may be performed.

The position of the substrate stage PST in the XY plane is detected by the laser interferometer 5. On the other hand, the position of the substrate stage PST in the Z direction (the optical axis direction of the projection optical system PL) is detected by a focus position detection system 6 including a light projection system 6a and a light receiving system 6b. The detection results of the laser interferometer 5 and the focus position detection system 6 are output to the control device CONT, and the substrate stage PST is moved via the drive mechanism PSTD based on an instruction from the control device CONT. The focus position detection system 6 detects the position (focus position) of the surface (exposure processing surface) of the substrate P held by the substrate holder PH in the direction of the optical axis of the projection optical system PL, and outputs information on the position. Output to CONT. When performing the exposure processing, the control device CONT controls the substrate via the drive mechanism PSTD based on the detection result of the focus position detection system 6 so that the surface position of the substrate P matches the image forming position of the projection optical system PL. Stage PST
To move.

The exposure apparatus EX according to the present embodiment
Is a step-and-repeat type exposure apparatus that exposes the pattern of the mask M while keeping the mask M and the substrate P stationary, and sequentially moves the substrate P step by step. Are exposed. Each pattern has a plurality of masks Ma.
To Md, and the exposure apparatus EX includes:
While exchanging these masks Ma to Md, the patterns are respectively exposed to different regions of the substrate P.

The dimension measuring device 8 is constituted by a CD meter capable of measuring a short dimension (distance) of, for example, 100 μm or less with high accuracy. In FIG. 1, the dimension measuring device 8 is arranged near the substrate stage PST, but may be installed at a position distant from the exposure device EX. In this case, the dimension measuring device 8 measures the dimension of the pattern formed on the substrate P by holding the substrate P on a predetermined holding unit different from the substrate holder PH.

An exposure method for exposing a pattern on a substrate P by the exposure apparatus EX having the above-described configuration will be described with reference to FIG. FIG. 2 shows a bottom gate type liquid crystal element pattern formed on the substrate P.
In FIG. 2, the liquid crystal element patterns include a gate electrode pattern G1 (first pattern) and a gate electrode pattern G2.
(Second pattern) and the source / drain electrode pattern S
D1 (first pattern) and a source / drain electrode pattern SD2 (second pattern). It should be noted that patterns of islands, ITO, insulating films and the like are omitted in this drawing.

The gate electrode pattern G1 is formed on the mask Ma, and the gate electrode pattern G2 is formed on the mask Mb. The source / drain electrode pattern SD1 is formed on the mask Mc, and the source / drain electrode pattern SD2 is formed on the mask Md. Then, the patterns G1, G2, SD1, and SD2 are exposed on the substrate P using the respective masks Ma to Md.

A G layer mark Rg1 is further provided at a predetermined position in the region of the mask Ma where the gate electrode pattern G1 is formed.
(First position detection mark) is formed, and a G layer mark Rg2 (second position detection mark) is formed at a predetermined position in a region of the mask Mb where the gate electrode pattern G2 is formed. ing. Then, the gate electrode pattern G
The G layer marks Rg1 and Rg2 are also exposed on the substrate P together with the G1 and G2. Similarly, an SD layer mark Rsd1 (first position detecting mark) is formed on the mask Mc in addition to the source / drain electrode pattern SD1, and the source / drain electrode pattern SD2 is formed on the mask Mc.
In addition, an SD layer mark Rsd2 (second position detection mark) is formed. Then, together with the source / drain electrode patterns SD1 and SD2, the SD layer marks Rsd1 and Rsd1
sd2 is also exposed on the substrate P.

The patterns G1, G2, SD1, S on the substrate P
To expose D2, first, the substrate P is placed on the substrate stage PS.
T is loaded onto the mask and the mask Ma is placed on the mask stage M.
The substrate P is loaded on the substrate P, and the gate electrode pattern G1 and the G layer mark Rg1 are simultaneously exposed on the substrate P. Next, the mask M
a is unloaded from the mask stage MST and the mask M
b, the gate electrode pattern G2 and the G layer mark R
g2 are simultaneously exposed on the substrate P. At this time, the substrate P is exposed so that the gate electrode pattern G1 and the gate electrode pattern G2 are overlapped with each other by a predetermined amount and joined. At this time, the formation positions of the G layer marks Rg1 and Rg2 on the mask are set in advance so that the G layer marks Rg1 and Rg2 are arranged near the joint portion of the gate electrode patterns G1 and G2. These G layer marks Rg1 and Rg2 are arranged on the substrate P near the joint.

After the gate electrode patterns G1 and G2 and the G layer marks Rg1 and Rg2 are formed on the substrate P, the relative position (distance) between the G layer mark Rg1 and the G layer mark Rg2 is measured using the dimension measuring device 8. . G layer mark Rg1, R
g2 is arranged in a two-dimensional direction (XY directions), and the dimension measuring device 8 outputs the X of each of the G layer marks Rg1 and Rg2.
The position in the Y direction (two directions) is measured. At this time, since the G-layer mark Rg1 and the G-layer mark Rg2 are arranged near the seam of the gate electrode patterns G1 and G2 and are close to each other, the measurement range (measurement window) of the dimension measuring device 8 composed of a CD meter. It is an arrangement relationship that can be measured simultaneously within That is, the formation positions of the G layer marks Rg1 and Rg2 are set in advance so that the two G layer marks Rg1 and Rg2 fall within the short dimension measurement range of the dimension measuring device 8 at the same time. By simultaneously measuring the two G layer marks Rg1 and Rg2 by the dimension measuring device 8, the relative positions of the G layer mark Rg1 and the G layer mark Rg2 can be accurately measured.

The measurement result of the dimension measuring device 8 is stored in the control device CO.
The control device CONT outputs the G layer mark R
Information on the positions of g1 and Rg2 is stored. The control device CONT reduces the joining error between the gate electrode pattern G1 and the gate electrode pattern G2 based on the measurement result of the relative positions of the G layer marks Rg1 and Rg2 at the time of the subsequent exposure processing (at the time of the actual manufacturing lot). Thus, the optimum position of the substrate stage PST at the time of exposure is determined.

Next, the mask Mc is connected to the mask stage MST.
And the source / drain electrode patterns SD1 and SD1
The substrate P and the layer mark Rsd1 are simultaneously exposed. Next, the mask Mc is unloaded from the mask stage MST to load the mask Md, and the substrate P is exposed simultaneously with the source / drain electrode pattern SD2 and the SD layer mark Rsd2. At this time, the source / drain electrode pattern SD1
The substrate P is exposed so as to join the source and drain electrode pattern SD2. At that time, the SD layer mark Rsd
1, Rsd2 is the source / drain electrode pattern SD1, S
The formation positions of the SD layer marks Rsd1 and Rsd2 on the mask are set in advance so as to be arranged in the vicinity of the joint of D2, and these SD layer marks Rsd1 and Rsd2 are exposed on the substrate P by exposure. It is arranged near.

Source / drain electrode patterns SD1, SD
2 and the SD layer marks Rsd1 and Rsd2 are formed on the substrate P, the SD layer marks Rsd
The relative position (distance) between No. 1 and the SD layer mark Rsd2 is measured. The SD layer marks Rsd1 and Rsd2 are arranged in a two-dimensional direction (XY directions).
The positions of the layer marks Rsd1 and Rsd2 in the XY directions (two directions) are measured. At this time, the SD layer marks Rsd1 and SD
The layer mark Rsd2 is a source / drain electrode pattern SD
1 and SD2, which are arranged in the vicinity of the joint portion and close to each other, so that the arrangement relationship is such that measurement can be performed simultaneously within the measurement range of the dimension measuring device 8 composed of a CD meter. That is, two SDs are set within the short dimension measurement range of the dimension measuring device 8.
In order for the layer marks Rsd1 and Rsd2 to be at the same time,
The formation positions of the SD layer marks Rsd1 and Rsd2 are set in advance. By simultaneously measuring the two SD layer marks Rsd1 and Rsd2 with the dimension measuring device 8, the S
The relative position between the D-layer mark Rsd1 and the SD-layer mark Rsd2 is accurately measured.

At this time, the G layer mark Rg1 and the SD layer mark Rsd1, the G layer mark Rg2 and the SD layer mark Rsd2
Are arranged so that they can be simultaneously measured by the dimension measuring device 8, and the G layer mark Rg1 and the SD layer mark R
The relative position (distance) between the sd1, G layer mark Rg2 and SD layer mark Rsd2 is also measured.

The measurement result of the dimension measuring device 8 is stored in the control device CO.
The control unit CONT stores the information on the positions of the SD layer marks Rsd1 and Rsd2. The control unit CONT determines a joining error between the source / drain electrode pattern SD1 and the source / drain electrode pattern SD2 based on the measurement result of the relative positions of the SD layer marks Rsd1 and Rsd2 at the time of the subsequent exposure processing (at the time of the actual manufacturing lot). An optimal position of the substrate stage PST at the time of exposure is determined so as to reduce the number.

Further, according to the position of the G layer mark Rg1,
The optimum position of the substrate stage PST is determined so that the source / drain electrode pattern SD1 overlaps the gate electrode pattern G1 at a predetermined position without increasing the overlay error. Similarly, the optimum position of the substrate stage PST is determined according to the position of the G layer mark Rg2 such that the source / drain electrode pattern SD2 overlaps a predetermined position without increasing the overlay error with the gate electrode pattern G2. .

As described above, as test exposure, G layer marks Rg1, Rg2 and SD layer marks Rsd1, Rsd2 are formed near the joint of the substrate P together with the gate electrode patterns G1, G2 and the source / drain electrode patterns SD1, SD2. And these marks Rg1, Rg2, Rs
The relative positions between d1 and Rsd2 are measured, and the patterns G1, G2, SD1, S
In order that each of the D2s may be joined or overlapped with high accuracy, that is, so that the dimensions and shapes of all the regions of the combined pattern including the joint portion become the target values.
An exposure apparatus that changes the position of the substrate P when exposing a pattern in an actual manufacturing lot and settings such as projection magnification, scaling, reticle shift, and reticle rotation, and exposes the pattern at the reset position. E
The main exposure part such as the X substrate stage (position adjustment unit) PST is adjusted. By changing the setting of the exposure position of the pattern and performing the exposure process, a pattern having a desired shape can be formed in all the exposure regions including the joint portion as shown in FIG.

As described above, the gate electrode patterns G1, G2 (source / drain electrode patterns SD1, SD2)
In conjunction with 2), the G layer marks Rg1 and Rg2 (SD layer marks Rsd1 and Rsd2) are formed by exposing the substrate P to light, and the relative positions of the marks can be measured with high accuracy. Then, by adjusting the exposure position of the pattern based on the measurement result, each pattern can be accurately exposed to the target position, and a highly accurate device pattern can be efficiently produced.

In the description of FIG. 2, the pattern G
Although it has been described that the position detection marks Rg1, Rg2, Rsd1, and Rsd2 are provided one by one (one place) in each of the areas 1, 1, G2, SD1, and SD2,
By providing two or more (a plurality of) plural marks in the vicinity of the joint, that is, by providing a plurality of position detection marks for the pattern, not only the shift components of the pattern in the XY directions but also the Z-axis The direction rotation component can also be measured and adjusted.

In the above embodiment, a pattern is formed on each of the plurality of masks Ma to Md, and exposure is performed while exchanging the plurality of masks Ma to Md, as shown in FIG. A plurality of patterns PA for joining or overlapping are formed on one mask M, and the mask M is moved to a mask stage MS
T moves in the X and Y directions to shift the illumination area by the exposure light EL, and sets the projection area by the blind part B;
A configuration in which a plurality of patterns PA (G1, G2, SD1, SD2) are joined or overlapped on the substrate P may be adopted. At this time, the marks R (Rg1, Rg2, Rsd) for seaming or overlay accuracy measurement are provided in each pattern area of the pattern PA on the mask M.
1, Rsd2) and the mark R together with the pattern PA
Also, by exposing the substrate P and measuring the position of the mark R, it is possible to perform the joining or overlapping exposure with high accuracy. In this case, the accuracy measurement mark R is set in advance so as to be arranged near the joint area of the pattern PA on the substrate P.

<< Second Embodiment >> Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 5, 6, and 7. FIG. Here, the same reference numerals are used for the same or equivalent components as those in the first embodiment, and
The description is simplified or omitted. In the second embodiment, before exposing a pattern on the substrate P, only the positioning mark is formed on the substrate P, the position of the formed positioning mark is measured to determine the deformation of the substrate P, and the amount of deformation of the substrate P is determined. Based on the above, a position such as an offset amount for exposing the first pattern to be a device on the substrate P is obtained, and the exposure is performed with the optimal position adjustment.

Before exposing the pattern, the alignment mark LSA and the positioning mark T are formed on the substrate P by using a mask M provided with the alignment mark LSA and the positioning mark T as shown in FIG. Exposure to form. Note that the mask M may be a mask in which a positioning mark T is added to a mask for a gate layer which is a first layer. The positioning mark T in this case exists in a portion different from the gate pattern, and is exposed after being limited by blind at the time of exposure. Then, the alignment mark LS
The alignment processing (EGA processing) is performed using A, and the position of the positioning marks T formed at a plurality of positions on the substrate P is measured.

The positioning mark T is provided at a predetermined position with respect to the alignment mark LSA. Specifically, the positioning mark T is provided on the substrate P at an ideal position of the first layer pattern (gate electrode pattern) G to be exposed in a later step.
That is, the gate electrode pattern G corresponds to the positioning mark T
Are exposed so as to overlap with each other (or to have a predetermined positional relationship). The positioning mark T is exposed on the substrate P with very good accuracy by controlling the position with reference to the interferometer, and is used when the pattern (gate electrode) G of the first layer is exposed. It is used to determine various offset values (magnification, rotation, scaling, shift, etc.). Further, when the positioning mark T is formed on the substrate P, the position of the positioning mark T is measured, and the position information including the alignment mark LSA is obtained, thereby obtaining the ideal grid of the formed positioning mark T and the alignment mark LSA. It is possible to obtain an error from the (ideal position). The obtained error information is averaged and multi-pointed by information obtained only from the alignment mark LSA. The amount can be determined in detail. The control device CONT sets the position of the substrate stage PST and sets the mask on the basis of the measurement result (the amount of deformation of the substrate P) such that the position where the next gate electrode pattern is exposed becomes the ideal position. The exposure apparatus EX is adjusted such as changing the position setting of M.

Here, as shown in FIG. 6, after the positioning mark T is formed on the substrate P, the gate electrode pattern G is formed by exposure, and the relative position between the gate electrode pattern G and the positioning mark T is determined. By the calculation, various offset values, such as magnification, scaling, rotation, shift, and the like, of how much the gate electrode pattern G deviates from the positioning mark T, which is an ideal position, are obtained. Then, based on the obtained various offset values, the exposure position of the gate electrode pattern G is adjusted when the gate electrode pattern G is exposed during the manufacturing lot.

After setting the position of the first layer pattern (gate electrode pattern) G, the second layer pattern (source / drain electrode pattern) SD is formed using the alignment mark LSA of the substrate P as shown in FIG. Adjust the exposure position.

After the test exposure for adjusting the exposure positions of the first layer pattern G and the second layer pattern SD as described above, the exposure in the actual production lot is performed.
That is, a new substrate P is loaded on the substrate stage PST, and after exposing the gate electrode pattern, the source / drain electrode pattern is exposed.

As described above, before exposing the pattern in advance, only the positioning mark T is formed on the substrate P with high precision, and the position of the positioning mark T is measured to obtain various offset values which are deformations of the substrate P. (Magnification, rotation, scaling, shift, etc.), and based on the amount of deformation of the substrate P, various offset amounts and positions as position information for exposing the first layer pattern (gate electrode pattern) G are determined. Since it is required, the exposure position of the first layer pattern (gate electrode pattern) G can be adjusted with high accuracy, and when a plurality of patterns are combined to form a continuous pattern, accurate pattern formation is performed. It can be performed. That is, the positioning mark T
By measuring the position difference and the mutual difference between the first layer patterns, the deformation, the shift, rotation, scaling, and orthogonality of the substrate P with respect to the ideal position can be obtained. A pattern can be exposed at a desired position. And
Since the exposure is performed after the gate electrode pattern G, which is the first layer pattern, is accurately positioned using the positioning mark T, the shape accuracy of the entire device pattern can be improved.

In the first and second embodiments, each mark has an L-shape in plan view, but may have any shape such as a square. That is, the mark is two-dimensional (X
It is a mark in the (Y direction), and any measurement results in the XY directions (two directions) may be obtained when measuring the relative position of the mark.

In the first and second embodiments, the exposure position of the pattern is adjusted by moving the substrate stage PST. However, the exposure position can also be adjusted by moving the mask stage MST holding the mask M. Position adjustment can be performed.

The application of the exposure apparatus EX is not limited to an exposure apparatus for a liquid crystal for exposing a liquid crystal display element pattern on a square glass plate, but may be, for example, an exposure apparatus for manufacturing a semiconductor or a thin film magnetic head. It can be widely applied to an exposure apparatus for manufacturing.

The light source 1 of the exposure apparatus EX of the above embodiment includes a KrF excimer laser (248 nm), an ArF excimer laser (193 nm), and an F ₂ laser (157 n).
m), Kr ₂ laser (146 nm), Ar ₂ laser (1
26 nm) can also be used.

The magnification of the projection optical system PL may be not only a reduction system but also an equal magnification or an enlargement system.

As the projection optical system PL, when far ultraviolet rays such as an excimer laser are used, a material that transmits far ultraviolet rays such as quartz or fluorite is used as a glass material, and when an F ₂ laser or X-ray is used, a catadioptric system is used. Alternatively, use a refraction type optical system (use a reflection type mask as well). When an electron beam is used, an electron optical system including an electron lens and a deflector may be used as the optical system. It goes without saying that the optical path through which the electron beam passes is in a vacuum state.

Substrate stage PST and mask stage MS
When a linear motor is used for T, any of an air levitation type using an air bearing and a magnetic levitation type using Lorentz force or reactance force may be used. Also,
The stage may be a type that moves along a guide or a guideless type that does not have a guide.

When a plane motor is used as the stage driving device, one of the magnet unit (permanent magnet) and the armature unit is connected to the stage, and the other of the magnet unit and the armature unit is connected to the stage moving surface side. (Base).

The reaction force generated by the movement of the substrate stage PST may be mechanically released to the floor (ground) using a frame member as described in Japanese Patent Application Laid-Open No. 8-166475. The present invention is also applicable to an exposure apparatus having such a structure.

The reaction force generated by the movement of the mask stage MST is mechanically moved to the floor (ground) using a frame member as described in JP-A-8-330224.
You may escape to The present invention is also applicable to an exposure apparatus having such a structure.

As described above, the exposure apparatus according to the embodiment of the present invention converts various subsystems including the components described in the claims of the present application into predetermined mechanical accuracy, electrical accuracy,
It is manufactured by assembling to maintain optical accuracy. Before and after this assembly, adjustments to achieve optical accuracy for various optical systems, adjustments to achieve mechanical accuracy for various mechanical systems, and various electric systems to ensure these various accuracy Are adjusted to achieve electrical accuracy. The process of assembling the exposure apparatus from various subsystems includes mechanical connections, wiring connections of electric circuits, and piping connections of pneumatic circuits among the various subsystems. It goes without saying that there is an assembling process for each subsystem before the assembling process from these various subsystems to the exposure apparatus. When the process of assembling the various subsystems into the exposure apparatus is completed, comprehensive adjustment is performed, and various precisions of the entire exposure apparatus are secured. It is desirable that the manufacture of the exposure apparatus be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

As shown in FIG. 8, in the semiconductor device, a step 201 for designing the function and performance of the device, and a step 20 for manufacturing a mask based on the design step, are performed.
2. Step 203 of manufacturing a substrate (wafer, glass plate) serving as a base material of the device; substrate processing step 204 of exposing a mask pattern to the substrate by the exposure apparatus of the above-described embodiment; device assembling step (dicing step, bonding) (Including a process and a package process) 205, an inspection step 206, and the like.

[0061]

The exposure method, exposure apparatus and mask of the present invention have the following effects. According to the exposure method described in claim 1 and the exposure apparatus described in claim 6,
The first and second position detection marks are formed on the substrate by exposing the substrate together with the first and second patterns, and the first and second position detection marks are measured to determine the first position. And the relative position of the second pattern can be obtained with high accuracy. Then, by adjusting the exposure apparatus based on the measurement result, the first and second patterns can be accurately exposed to the target position.

According to the second aspect of the present invention, since the adjustment of the exposure apparatus involves changing the setting of the exposure position of at least one of the first and second patterns, the relative position of the position detection mark is adjusted. Based on the measurement result, the pattern can be exposed at a desired position with high accuracy.

According to the exposure method of the third aspect, the first method
When exposing the substrate with the second pattern and the second pattern, the position detection mark is arranged near the joint portion. Therefore, based on the measurement result of the position of the position detection mark, the joint is used. The alignment accuracy can be improved.

According to the exposure method of the fourth aspect, the first
Since the second position detection mark and the second position detection mark have an arrangement relationship that can be measured simultaneously, when a predetermined measuring device such as a CD meter is used, the measurement is not performed while moving the measuring device, so that the measurement accompanying the movement is not performed. No error occurs. Therefore, accurate measurement can be performed.

According to the exposure method of the present invention, the position detection mark is a two-dimensional mark, and the measurement results in two directions (XY directions) are obtained when measuring the mark. Positioning in the direction can be accurately performed. Therefore, accurate exposure processing can be performed.

According to the ninth aspect, before the pattern is exposed, a positioning mark is formed on the substrate in advance, and the position of the positioning mark is measured to determine the deformation of the substrate. Since the position where the pattern is exposed is adjusted based on the amount of the exposure, accurate exposure can be performed.

According to the mask of the present invention, the mark for measuring the joint or overlay accuracy can be projected onto the substrate together with the pattern of the mask. The alignment accuracy can be measured.

According to the mask of the present invention, since the accuracy measurement mark is provided in the vicinity of the joint region of the plurality of patterns, the mark measurement can be stably performed at the time of joint exposure. In addition, the pattern joint exposure can be performed with high accuracy.

[Brief description of the drawings]

FIG. 1 is a schematic configuration diagram illustrating one embodiment of an exposure apparatus according to the present invention.

FIG. 2 is a diagram illustrating a first embodiment of an exposure method according to the present invention, and is a diagram illustrating a pattern and a position detection mark formed on a substrate.

FIG. 3 is a diagram illustrating a pattern formed on a substrate by the exposure method of the present invention.

FIG. 4 is a diagram for explaining an embodiment of the mask of the present invention.

FIG. 5 is a view for explaining a second embodiment of the exposure method of the present invention, and is a view for explaining positioning marks formed on a substrate.

FIG. 6 is a diagram illustrating a state where a pattern is exposed to a positioning mark.

FIG. 7 is a diagram illustrating a state where a pattern is exposed to a positioning mark.

FIG. 8 is a flowchart illustrating an example of a manufacturing process of a semiconductor device.

FIG. 9 is a diagram for explaining a problem of the related art.

FIG. 10 is a diagram for explaining a problem of the related art.

[Explanation of symbols]

Reference Signs List 1 light source 8 dimension measurement device CONT control device (position adjustment unit, exposure unit) G1 gate electrode pattern (first pattern) G2 gate electrode pattern (second pattern) EX exposure device (exposure unit) IL illumination optical system M ( Ma to Md) Mask (exposure unit) MST Mask stage (position adjustment unit) P substrate PA pattern PL projection optical system PST substrate stage (position adjustment unit) R Accuracy measurement mark Rg1 G layer pattern (first position detection pattern) Rg2 G layer pattern (second position detection pattern) Rsd1 SD layer pattern (first position detection pattern) Rsd2 SD layer pattern (second position detection pattern) SD1 Source / drain electrode pattern (first pattern) ) SD2 source / drain electrode pattern (second pattern) T positioning mark

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/68 H01L 21/30 523 (72) Inventor Manabu Toguchi 3-2-3 Marunouchi, Chiyoda-ku, Tokyo F term in Nikon Corporation (reference) 2H095 BE03 BE08 2H097 AA12 AB09 BA10 BB00 KA03 KA12 KA13 KA20 KA29 LA12 5F031 CA02 CA05 CA07 CA20 JA32 JA50 JA51 LA09 MA27 MA33 5F046 DB05 FC06

Claims (9)

[Claims] An exposure method for exposing a substrate with first and second patterns by an exposure apparatus, comprising exposing a first position detection mark to a predetermined region of the first pattern together with the first pattern. And exposing the second pattern by overlapping or adjoining at least a part of the first pattern and exposing a second position detection mark in a predetermined region of the second pattern. An exposure method, comprising: measuring a relative position between the first position detection mark and the second position detection mark; and adjusting an exposure apparatus based on the measurement result. 2. The exposure method according to claim 1, wherein the first and second patterns are exposed at a set position on the substrate, and the adjustment of the exposure apparatus is performed by adjusting the first or second pattern. An exposure method, wherein setting of the position of at least one of the patterns is changed. 3. The exposure method according to claim 1, wherein the first pattern and the second pattern are joined to each other to expose the substrate, and at this time, the first position detection mark is used. And an exposure method, wherein the second position detection mark is disposed near the joint. 4. The exposure method according to claim 1, wherein in measuring the first and second position detection marks,
An exposure method, wherein the first and second position detection marks are arranged so as to be measurable simultaneously. 5. The exposure method according to claim 1, wherein the position detection mark is a two-dimensional mark, and a measurement result in two directions is obtained at the time of the measurement. Exposure method. 6. An exposure apparatus for exposing first and second patterns at a set position on a substrate, wherein a first position detection mark is formed in a predetermined area of the first pattern together with the first pattern. An exposing unit for exposing, exposing the second pattern by overlapping or adjoining at least a part of the first pattern, and exposing a second position detection mark in a predetermined region of the second pattern; And, based on the positional relationship between the first position detection mark and the second position detection mark exposed by the exposure unit,
An exposure apparatus comprising: a position adjustment unit that adjusts a setting of the position of at least one of the first and second patterns. 7. A mask having a pattern to be joined or overlapped for projecting a device pattern onto a substrate using an exposure apparatus, wherein a mark for joint or overlay accuracy measurement is provided in a pattern area of the mask. A mask characterized in that: 8. The mask according to claim 7, wherein the pattern can form a continuous pattern by joining a plurality of patterns, and the accuracy measurement mark is provided near the joining region. A mask characterized in that: 9. An exposure method for exposing a pattern to a set position on a substrate, wherein the substrate is formed with only a positioning mark before exposing the pattern in advance, and the position of the positioning mark is measured. An exposure method comprising: determining a deformation of the substrate; and adjusting the position based on an amount of deformation of the substrate.