JP2002110547A - Plasma treating apparatus - Google Patents

Plasma treating apparatus

Info

Publication number
JP2002110547A
JP2002110547A JP2000293478A JP2000293478A JP2002110547A JP 2002110547 A JP2002110547 A JP 2002110547A JP 2000293478 A JP2000293478 A JP 2000293478A JP 2000293478 A JP2000293478 A JP 2000293478A JP 2002110547 A JP2002110547 A JP 2002110547A
Authority
JP
Japan
Prior art keywords
plasma
bolt
vacuum
substrate
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000293478A
Other languages
Japanese (ja)
Inventor
Yuji Takebayashi
雄二 竹林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Kokusai Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2000293478A priority Critical patent/JP2002110547A/en
Publication of JP2002110547A publication Critical patent/JP2002110547A/en
Pending legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a plasma treating apparatus having excellent productivity, by improving machining properties, mechanical strength, plasma resistance and maintainability of a vacuum bolt. SOLUTION: The plasma treating apparatus supplies reactive gas and an electric power to a vacuum chamber and treats board by means of a chemical reaction of the gas. The apparatus further thermally sprays a substance having a plasma resistance to a member 1 exposed with a plasma treating chamber 3, and clamps the member 3 by a bolt 7 formed with a plasma resistant film 8.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は半導体装置や液晶表
示装置の製造に用いるプラズマCVD装置、ドライエッ
チング装置等のプラズマ処理装置に関するものである。
[0001] 1. Field of the Invention [0002] The present invention relates to a plasma processing apparatus such as a plasma CVD apparatus and a dry etching apparatus used for manufacturing a semiconductor device or a liquid crystal display device.

【0002】[0002]

【従来の技術】半導体装置、液晶表示装置の製造に用い
られるプラズマ処理装置として、一般にはプラズマCV
D装置やドライエッチング装置が知られている。これら
の装置は、電力が供給される電極を配置した真空室を有
し、この真空室内に処理すべき基板(半導体ウェーハや
ガラス基板)を装入し、必要に応じて基板を加熱し、真
空室内を減圧した後に該真空室内に反応性ガスを導入
し、電極に電力を供給し真空室内にプラズマを発生させ
て化学反応により基板上に物質を堆積し、或いは基板上
の物質又は基板そのものをエッチングし、若しくは基板
上の物質又は基板そのものを変質させる処理を行うもの
である。
2. Description of the Related Art As a plasma processing apparatus used for manufacturing a semiconductor device and a liquid crystal display device, a plasma CV is generally used.
D apparatuses and dry etching apparatuses are known. These apparatuses have a vacuum chamber in which electrodes to which power is supplied are arranged, a substrate to be processed (a semiconductor wafer or a glass substrate) is charged into the vacuum chamber, and the substrate is heated as necessary, and a vacuum is applied. After reducing the pressure in the chamber, a reactive gas is introduced into the vacuum chamber, power is supplied to the electrodes, plasma is generated in the vacuum chamber, and a substance is deposited on the substrate by a chemical reaction. The etching or the process of altering the quality of the substance on the substrate or the substrate itself is performed.

【0003】現在、最も多用されている形式は、容量結
合型のプラズマ処理装置である。この形式のプラズマ処
理装置は、真空室内に一組の平行平板電極を対向させて
配置し、その一方に高周波電力を供給し、他方の電極側
に基板を保持し、電極間にプラズマを発生させて基板を
処理するものである。
At present, the most frequently used type is a capacitively coupled plasma processing apparatus. In this type of plasma processing apparatus, a pair of parallel plate electrodes are arranged in a vacuum chamber so as to face each other, high-frequency power is supplied to one of them, a substrate is held on the other electrode side, and plasma is generated between the electrodes. To process the substrate.

【0004】尚、上記の様な構造に限らず、基板を保持
する側の電極に電力を供給する構造を有した装置や、基
板を設置する側の電極に第二の電力を供給する構造の装
置も存在する。
[0004] The present invention is not limited to the above-described structure, but may be applied to an apparatus having a structure for supplying power to an electrode for holding a substrate or a structure for supplying second power to an electrode for placing a substrate. Devices also exist.

【0005】この様なプラズマ処理装置では、真空室内
でプロセスキットを構成する為複数の真空ボルトが使用
されているが、表面が腐食され基板を汚染するというプ
ラズマ耐性の問題がある。
In such a plasma processing apparatus, a plurality of vacuum bolts are used to form a process kit in a vacuum chamber. However, there is a problem of plasma resistance that the surface is corroded and the substrate is contaminated.

【0006】この為、プラズマ処理用真空ボルトには以
下の性能が要求される。
[0006] For this reason, the following performance is required for the vacuum bolt for plasma processing.

【0007】1.大型装置への対応や高温での使用を可
能にする為、強いトルクで固定できる機械的強度に優れ
ていること。 2.ボルト表面がプラズマや反応ガスに曝されても腐食
や変形、変質が最小限である(プラズマ耐性や反応性ガ
スに対する耐腐食性がある)こと。 3.長時間の使用や複数回の脱着に際し、変質が最小限
であること。
[0007] 1. Excellent mechanical strength that can be fixed with strong torque in order to be compatible with large equipment and to be able to use at high temperatures. 2. Minimize corrosion, deformation, and alteration even when the bolt surface is exposed to plasma or reactive gas (it has plasma resistance and corrosion resistance to reactive gas). 3. Deterioration is minimal during prolonged use or multiple desorptions.

【0008】従来技術の真空ボルトとしては、インコネ
ル、ハステロイといったNi系耐食合金や、真空ボルト
表面に表面処理(Niメッキ、酸化処理、弗化処理、ア
ルマイト処理)やボルトの材質をセラミックス等にする
技術が知られている。
Conventional vacuum bolts include Ni-based corrosion-resistant alloys such as Inconel and Hastelloy, surface treatments (Ni plating, oxidation treatment, fluoridation treatment, and alumite treatment) on the surface of the vacuum bolts, and the material of the bolts is ceramics. The technology is known.

【0009】[0009]

【発明が解決しようとする課題】然し乍ら、上記従来の
真空ボルトでは、以下の様な問題があった。
However, the above-mentioned conventional vacuum bolt has the following problems.

【0010】1.インコネル、ハステロイといったNi
系耐食合金のボルトは、高温(150℃以上)で水素を
含んだプロセスを行った場合、活性化されたガスが接す
る金属表面は酸化層が破壊され、Ni,Fe系のパウダ
状の異物が発生し易い。 2.表面処理に於けるNiメッキのボルトは、アンモニ
ア及びHFに対して耐性がなく、高温(150℃以上)
弗素雰囲気で黒く変色する。 3.表面処理に於けるアルマイト処理のボルトは、母材
のアルミニウムは加工性がよい反面、機械的強度が比較
的弱く、特に大型装置に使用したり、高温の雰囲気下で
使用する場合は、長時間の使用で変形を起こし易いとい
う虞れがある。又、アルミニウムは塩素雰囲気に弱い
為、特にドライエッチング装置ではアルマイト処理をし
て使用する場合が多いが、このアルマイトは長時間の使
用でプラズマによりエッチングされ、厚さが減少する為
再生処理が必須である。 4.セラミックスのボルトは、プラズマ耐性はよいが機
械的強度が弱く、強いトルクで固定する場合には問題が
あり、又加工性にも問題がある。
[0010] 1. Ni such as Inconel and Hastelloy
When a process involving hydrogen is performed at a high temperature (150 ° C. or higher) on a bolt made of a corrosion-resistant alloy, an oxide layer is destroyed on the metal surface in contact with the activated gas, and powdery Ni- or Fe-based foreign matter is removed. Easy to occur. 2. Ni-plated bolts in surface treatment are not resistant to ammonia and HF and have high temperatures (150 ° C or higher)
Turns black in fluorine atmosphere. 3. Alumite-treated bolts for surface treatment use aluminum as the base material with good workability, but have relatively low mechanical strength, especially when used in large equipment or when used in a high-temperature atmosphere. There is a possibility that deformation is likely to occur due to the use of. Also, aluminum is weak to chlorine atmosphere, so it is often used with alumite treatment especially in dry etching equipment. However, this alumite is etched by plasma over a long period of use and its thickness decreases, so regeneration treatment is essential. It is. 4. Ceramic bolts have good plasma resistance but low mechanical strength, and have problems when fixed with strong torque, and also have problems with workability.

【0011】本発明は斯かる実情に鑑み、加工性、機械
的強度、プラズマ耐性、メンテナンス性を向上させ、生
産性に優れたプラズマ処理装置を提供するものである。
The present invention has been made in view of the above circumstances, and provides a plasma processing apparatus which has improved workability, mechanical strength, plasma resistance, and maintainability, and is excellent in productivity.

【0012】[0012]

【課題を解決するための手段】本発明は、真空室に反応
性ガスと電力を供給し、反応性ガスの化学反応によって
基板を処理するプラズマ処理装置に於いて、プラズマ処
理室に露出する部材をプラズマ耐性のある物質を溶射し
プラズマ耐性膜を形成したボルトにより固着したプラズ
マ処理装置に係るものである。
SUMMARY OF THE INVENTION The present invention relates to a plasma processing apparatus for supplying a reactive gas and electric power to a vacuum chamber and processing a substrate by a chemical reaction of the reactive gas. The present invention relates to a plasma processing apparatus in which a plasma-resistant material is sprayed to form a plasma-resistant film.

【0013】[0013]

【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態を説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0014】上記した様に、プラズマ処理装置は基板を
処理する為の真空室を具備し、真空室内でプロセスキッ
トを構成する為に真空室プラズマ処理用真空ボルトが使
用され、斯かる真空室プラズマ処理用真空ボルトには以
下の性能が要求される。
As described above, the plasma processing apparatus has a vacuum chamber for processing a substrate, and a vacuum bolt for plasma processing in a vacuum chamber is used to form a process kit in the vacuum chamber. The following performance is required for the processing vacuum bolt.

【0015】1.大型装置への対応や高温での使用を可
能にする為、強いトルクで固定できる機械的強度に優れ
ていること。 2.ボルト表面がプラズマや反応ガスに曝されても腐食
や変形、変質が最小限である(プラズマ耐性や反応性ガ
スに対する耐腐食性がある)こと。 3.長時間の使用や複数回の脱着に際し、変質が最小限
であること。
1. Excellent mechanical strength that can be fixed with strong torque in order to be compatible with large equipment and to be able to use at high temperatures. 2. Minimize corrosion, deformation, and alteration even when the bolt surface is exposed to plasma or reactive gas (it has plasma resistance and corrosion resistance to reactive gas). 3. Deterioration is minimal during prolonged use or multiple desorptions.

【0016】従って、本発明では上記1、2の要求を満
たす為、ボルトに耐食性合金を使用し、更にプラズマ耐
性のある物質を溶射し、プラズマ耐性膜を形成する。
尚、該プラズマ耐性膜は摩擦、剥離等機械的強度がない
ことから、上記3の要求を満たす為着脱が繰返される箇
所については、ボルト着脱時に摩擦が発生する面、或は
工具との接触面を覆うボルトカバーをボルトの頭に嵌着
する。前記ボルト自体は機械的強度を優先して選択し、
前記ボルトカバーの材質はプラズマ耐性、耐食性を優先
して選択し、更に摩擦が発生しても発塵が最小限である
材質を選択する。
Therefore, in the present invention, in order to satisfy the above-mentioned requirements (1) and (2), a corrosion-resistant alloy is used for the bolt, and a plasma-resistant material is sprayed to form a plasma-resistant film.
Since the plasma resistant film does not have mechanical strength such as friction and peeling, the portion where the attachment and detachment are repeated to satisfy the requirement of the above 3 is performed on the surface where friction occurs when attaching and detaching the bolt or the contact surface with the tool. Fit the bolt cover covering the head to the bolt head. The bolt itself is selected with priority on mechanical strength,
The material of the bolt cover is selected by giving priority to plasma resistance and corrosion resistance, and a material that generates minimum dust even when friction occurs is selected.

【0017】図1、図2により具体的に説明する。This will be described more specifically with reference to FIGS.

【0018】図中、1,2はプロセスキットを示し、プ
ロセスキット1はプラズマ処理室3に露出している。前
記プロセスキット1,2は前記プラズマ処理室3側から
真空ボルト4により固着される。
In the figure, reference numerals 1 and 2 denote process kits, and the process kit 1 is exposed to the plasma processing chamber 3. The process kits 1 and 2 are fixed by vacuum bolts 4 from the plasma processing chamber 3 side.

【0019】ボルト本体7は前記プロセスキット2の螺
子孔5に螺着する螺子部7c、前記プロセスキット1の
通孔6を挿通する螺子首部7b、ボルト頭7aからな
り、前記螺子部7cを除く表面にプラズマ耐性のある物
質を溶射し、プラズマ耐性膜8を形成する。前記ボルト
本体7は高融点金属で且つ耐食金属であり、例えばイン
コネル、ハステロイが用いられ、前記プラズマ耐性膜8
はアルミニウム溶射、ハステロイ等のNi合金溶射等の
表面処理を行って形成する。
The bolt body 7 includes a screw portion 7c screwed into the screw hole 5 of the process kit 2, a screw neck portion 7b inserted through the through hole 6 of the process kit 1, and a bolt head 7a, excluding the screw portion 7c. A plasma-resistant material is sprayed on the surface to form a plasma-resistant film 8. The bolt body 7 is a refractory metal and a corrosion-resistant metal, for example, Inconel or Hastelloy is used.
Are formed by performing a surface treatment such as aluminum alloy spraying or Ni alloy spraying such as Hastelloy.

【0020】前記ボルト頭7aにボルトカバー9を嵌合
する。
A bolt cover 9 is fitted to the bolt head 7a.

【0021】該ボルトカバー9は前記ボルト頭7aと相
似な六角形状の外径と嵌合穴9aとを具備し、該嵌合穴
9aの底部を前記螺子首部7bが貫通する。又前記嵌合
穴9aの角部には逃げ部9bを形成し、加工誤差により
前記ボルト頭7aの頂部と前記嵌合穴9aの角部とが干
渉しない様にしてある。従って、前記ボルトカバー9は
締付け工具(図示せず)が嵌合する前記ボルト頭7aの
周面、前記プロセスキット1と摩擦がある底面とを覆
う。前記ボルトカバー9はプラズマ耐性のあるアルミニ
ウム、セラミックスを使用する。
The bolt cover 9 has a hexagonal outer diameter similar to the bolt head 7a and a fitting hole 9a, and the screw neck 7b passes through the bottom of the fitting hole 9a. A relief 9b is formed at the corner of the fitting hole 9a so that the top of the bolt head 7a does not interfere with the corner of the fitting hole 9a due to a processing error. Therefore, the bolt cover 9 covers the peripheral surface of the bolt head 7a to which a tightening tool (not shown) is fitted, and the bottom surface having friction with the process kit 1. The bolt cover 9 is made of plasma-resistant aluminum or ceramic.

【0022】上記真空室プラズマ処理用真空ボルトを使
用することで、前記ボルト本体7は充分な機械的強度を
有するので、前記プロセスキット1,2の組立に要求さ
れる強い締付け力が得られ、更に前記ボルト本体7のプ
ラズマ処理室3に露出する部分については前記プラズマ
耐性膜8が形成されているので、プラズマに対する耐性
を有し、腐食等を起こさない。尚、前記プラズマ耐性膜
8は機械的な外力、例えば引掻き、摩擦により剥離し易
い。前記ボルトカバー9は前記ボルト頭7aのプラズマ
耐性膜8を保護する。
By using the vacuum bolt for plasma treatment in a vacuum chamber, the bolt body 7 has a sufficient mechanical strength, so that a strong tightening force required for assembling the process kits 1 and 2 can be obtained. Further, since the plasma resistant film 8 is formed on a portion of the bolt body 7 exposed to the plasma processing chamber 3, the bolt has resistance to plasma and does not cause corrosion. Incidentally, the plasma resistant film 8 is easily peeled off by a mechanical external force such as scratching or friction. The bolt cover 9 protects the plasma resistant film 8 on the bolt head 7a.

【0023】前記プロセスキット1,2を組立、分解す
る場合に前記真空ボルト4の着脱を行い、その際に工具
は前記ボルトカバー9を介して前記ボルト頭7aに当接
し、又該ボルト頭7aは前記ボルトカバー9を介して前
記プロセスキット1に摩擦するので前記プラズマ耐性膜
8には摩擦、圧縮等の外力が作用せず損傷を受けること
がなく、剥離等を生じないので、前記真空ボルト4を繰
返し使用してもプラズマによる腐食等が発生しない。
When assembling and disassembling the process kits 1 and 2, the vacuum bolt 4 is attached and detached. At this time, the tool comes into contact with the bolt head 7a via the bolt cover 9 and the bolt head 7a Rubs against the process kit 1 via the bolt cover 9 so that no external force such as friction or compression acts on the plasma-resistant film 8 and the plasma-resistant film 8 is not damaged. Even if 4 is used repeatedly, corrosion by plasma does not occur.

【0024】尚、該真空ボルト4で着脱頻度が少なく或
は取外した場合、新しい真空ボルト4を使用する場合に
は、前記ボルトカバー9は必ずしも使用する必要はな
い。
When the vacuum bolt 4 is not frequently attached or detached or removed, or when a new vacuum bolt 4 is used, the bolt cover 9 is not necessarily used.

【0025】又、該ボルトカバー9を着脱時のみに使用
してもよく、この場合該ボルトカバー9の形状は六角筒
状となる。
The bolt cover 9 may be used only at the time of attachment and detachment. In this case, the shape of the bolt cover 9 is a hexagonal cylinder.

【0026】以上説明した様に、本発明によれば、真空
ボルトの母材に機械的強度を有した材料を用い、プラズ
マが接する面をプラズマ耐性のある表面処理をし、機械
的摩擦等の影響を受ける面はカバーを取付けることで、
その加工性、機械的強度、耐腐食性、及びメンテナンス
性を向上させ、生産性に優れた処理装置としている。
As described above, according to the present invention, a material having mechanical strength is used for the base material of the vacuum bolt, and the surface in contact with the plasma is subjected to a plasma-resistant surface treatment to reduce mechanical friction and the like. The affected surface is to be fitted with a cover,
The processability, mechanical strength, corrosion resistance, and maintainability are improved, and the processing apparatus is excellent in productivity.

【0027】[0027]

【発明の効果】以上述べた如く本発明によれば、真空室
に反応性ガスと電力を供給し、反応性ガスの化学反応に
よって基板を処理するプラズマ処理装置に於いて、プラ
ズマ処理室に露出する部材をプラズマ耐性のある物質を
溶射しプラズマ耐性膜を形成したボルトにより固着した
ので、表面が腐食し、腐食した物質が被処理基板に腐食
して基板を汚染し、処理品質を低下し、或は製品不良の
発生を防止できるので、処理品質の向上、歩留りの向上
に寄与し、生産性の向上を図ることができるという優れ
た効果を発揮する。
As described above, according to the present invention, in a plasma processing apparatus for supplying a reactive gas and electric power to a vacuum chamber and processing a substrate by a chemical reaction of the reactive gas, the apparatus is exposed to the plasma processing chamber. The material to be treated is fixed by bolts that have a plasma-resistant film formed by spraying a plasma-resistant material, so the surface corrodes, the corroded material corrodes the substrate to be processed, contaminates the substrate, and reduces the processing quality. Alternatively, since the occurrence of product defects can be prevented, an excellent effect of improving the processing quality and the yield, and improving the productivity can be achieved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施の形態の要部を示す断面図であ
る。
FIG. 1 is a sectional view showing a main part of an embodiment of the present invention.

【図2】同前実施の形態の要部の平面図である。FIG. 2 is a plan view of a main part of the first embodiment.

【符号の説明】[Explanation of symbols]

1 プロセスキット 2 プロセスキット 3 プラズマ処理室 4 真空ボルト 5 螺子孔 6 通孔 7 ボルト本体 8 プラズマ耐性膜 9 ボルトカバー DESCRIPTION OF SYMBOLS 1 Process kit 2 Process kit 3 Plasma processing chamber 4 Vacuum bolt 5 Screw hole 6 Through hole 7 Bolt body 8 Plasma resistant film 9 Bolt cover

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 真空室に反応性ガスと電力を供給し、反
応性ガスの化学反応によって基板を処理するプラズマ処
理装置に於いて、プラズマ処理室に露出する部材をプラ
ズマ耐性のある物質を溶射しプラズマ耐性膜を形成した
ボルトにより固着したことを特徴とするプラズマ処理装
置。
In a plasma processing apparatus for supplying a reactive gas and electric power to a vacuum chamber and processing a substrate by a chemical reaction of the reactive gas, a member exposed to the plasma processing chamber is sprayed with a substance having plasma resistance. A plasma processing apparatus characterized by being fixed by bolts having a plasma resistant film formed thereon.
JP2000293478A 2000-09-27 2000-09-27 Plasma treating apparatus Pending JP2002110547A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000293478A JP2002110547A (en) 2000-09-27 2000-09-27 Plasma treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000293478A JP2002110547A (en) 2000-09-27 2000-09-27 Plasma treating apparatus

Publications (1)

Publication Number Publication Date
JP2002110547A true JP2002110547A (en) 2002-04-12

Family

ID=18776261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000293478A Pending JP2002110547A (en) 2000-09-27 2000-09-27 Plasma treating apparatus

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004070761A2 (en) * 2003-01-27 2004-08-19 Tokyo Electron Limited Method and apparatus for improved fastening hardware
US7241346B2 (en) 2002-10-29 2007-07-10 Nhk Spring Co., Ltd. Apparatus for vapor deposition
KR20210101885A (en) * 2020-02-11 2021-08-19 (주)원세미콘 Plasma focus ring for semiconductor etching apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7241346B2 (en) 2002-10-29 2007-07-10 Nhk Spring Co., Ltd. Apparatus for vapor deposition
WO2004070761A2 (en) * 2003-01-27 2004-08-19 Tokyo Electron Limited Method and apparatus for improved fastening hardware
WO2004070761A3 (en) * 2003-01-27 2005-03-24 Tokyo Electron Ltd Method and apparatus for improved fastening hardware
KR20210101885A (en) * 2020-02-11 2021-08-19 (주)원세미콘 Plasma focus ring for semiconductor etching apparatus
KR102393961B1 (en) * 2020-02-11 2022-05-04 (주)원세미콘 Plasma focus ring for semiconductor etching apparatus

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