JP2002100704A - Package and mounting structure thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the instability of electrical connection of a package to an external electrical circuit board due to a strong thermal stress caused by a difference in thermal expansion coefficients between the package and the external electrical circuit substrate, when the package is mounted on the external electric circuit substrate, such as a printed substrate. SOLUTION: A package A is provided with a ceramic insulating substrate 1, a connection pad 3a formed on the bottom plane or the side plane of the insulating substrate 1, and a metallized wiring layer 3 which is arranged inside or on the front surface of the insulating substrate 1, in order to connect the connection pad 3a with an element 5 mounted on the upper surface of the insulating substrate 1. It is mounted on an external electrical circuit substrate B, by connecting a connection pad 3a with a wax material. The insulating substrate 1 consists of a ceramic sintered body, which has a thermal expansion coefficient of 80-180×10-7/ deg.C in the temperature range 40-400 deg.C. The metallized wiring layer 3 and the connection pad 3a consist of Cu, and the metallized wiring layer 3 and the insulating substrate 1 are formed by the simultaneous sintering.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a package and a structure for mounting the package on an external electric circuit board.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element housing package for housing a semiconductor element, particularly a semiconductor integrated circuit element such as an LSI (Large Scale Integrated Circuit), is generally made of an electrically insulating material such as alumina ceramics, and has a top center. An insulating substrate having a recess for accommodating a semiconductor element in a portion thereof, a plurality of metallized wiring layers made of a refractory metal powder such as tungsten or molybdenum derived from the periphery of the recess of the insulating substrate; A plurality of connection pads formed on the lower surface or side surfaces of the metallized wiring layer and electrically connected to the metallized wiring layer, connection terminals brazed and attached to the connection pads as desired, and a lid, The semiconductor element is bonded and fixed to the bottom of the recess of the insulating substrate via an adhesive made of glass, resin, or the like, and each electrode of the semiconductor element and the metallized wiring layer are connected. The semiconductor element is air-tightly sealed inside the container consisting of the insulating substrate and the lid by electrically connecting via a bonding wire and bonding the lid to the upper surface of the insulating substrate via a sealing material such as glass or resin. By doing so, a semiconductor element storage package as a product is obtained.

In order to connect the semiconductor element housing package to a wiring conductor of an external electric circuit board, a connection terminal provided on the insulating substrate of the semiconductor element housing package and a wiring conductor of the external electric circuit board are connected. Can be electrically connected by a brazing material such as solder.

In general, as the degree of integration of a semiconductor device increases, the number of electrodes formed on the semiconductor device also increases. As a result, the number of terminals in a semiconductor housing package for housing the same increases. However, as the number of electrodes increases, there is a limit in increasing the size of the package itself. Therefore, as more miniaturization is required, it is necessary to increase the density of terminals in the package.

[0005] As a structure for increasing the terminal density in a conventional package, a pin grid array (PGA) in which metal pins such as Kovar are connected as connection terminals to the lower surface of the package is the most common, but recently, it has been recently used. A quad flat package (QFP) in which gull-wing (L-shaped) metal pins are connected to metallized wiring layers led out on four sides of the package, and electrode pads are provided on four side faces of the package without lead pins There is a leadless chip carrier (LCC), and a ball grid array (BGA) in which connection terminals are formed by spherical terminals made of solder. Among these, BGA
It is said that the highest density is possible.

In this ball grid array (BGA), connection terminals are formed by connecting spherical or columnar terminals made of a brazing material such as solder to connection pads, and the connection terminals are formed on wiring conductors of an external electric circuit board. The terminals are placed in contact with each other, and then the terminals are heated and melted at a temperature of about 250 to 400 ° C., and the spherical terminals are bonded to a wiring conductor to be mounted on an external electric circuit board. With such a mounting structure, each electrode of the semiconductor element housed in the semiconductor element housing package is electrically connected to the external electric circuit board via the metallized wiring layer and the connection terminal.

Further, as an insulating substrate in a package for housing a semiconductor element, an insulating material made of a sintered body such as alumina, mullite, glass-ceramic or the like is mainly used depending on its use.

On the other hand, as an external electric circuit board, the surface of an insulator mainly composed of a glass-epoxy composite material has C
A wiring conductor formed of u, Ag, Au, or the like is used.

[0009]

The ceramics such as alumina and mullite used as an insulating substrate in these packages have a high strength of 200 MPa or more, and have a high reliability as a multi-layered technology with metallized wiring layers. Although its usefulness is high, its thermal expansion coefficient is about 40 to 70 × 10 ⁻⁷ / ° C., whereas glass-epoxy, which is most frequently used as an external electric circuit board on which a package is mounted, is used. The thermal expansion coefficient of a printed circuit board made of such a material is as large as 120 to 180 × 10 ⁻⁷ / ° C.

Therefore, when the semiconductor integrated circuit element is accommodated in the package for accommodating the semiconductor element and then mounted on an external electric circuit board such as a printed circuit board, heat generated during operation of the semiconductor integrated circuit element is transferred to the insulating substrate. When repeatedly applied to both of the external electric circuit boards, a large thermal stress is generated between the insulating substrate and the external electric circuit board due to a difference in thermal expansion coefficient between the two. This thermal stress has no significant effect when the number of terminals in the package is relatively small, that is, 300 or less, but the influence tends to increase as the number of terminals exceeds 300 and the package itself becomes larger.

That is, when a thermal stress is repeatedly applied by repeating the operation and the stop of the package, the thermal stress is applied to the outer peripheral portion of the connection pad on the lower surface of the insulating substrate and the bonding interface between the wiring conductor and the terminal of the external electric circuit board. As a result, the connection pads are peeled off from the insulating substrate, the terminals are peeled off from the wiring conductors, and the connection terminals of the semiconductor element storage package are stably electrically connected to the wiring conductors of the external electric circuit board for a long time. It had the disadvantage that it could not be connected.

Accordingly, the present invention is directed to an external electric circuit board having a high thermal expansion in which the above package is made of glass-epoxy resin or the like as an insulator in order to solve the above-mentioned drawbacks.
An object of the present invention is to provide a highly reliable package capable of maintaining a stable and stable connection state for a long period of time and a mounting structure thereof.

[0013]

The package of the present invention comprises:
A ceramic insulating substrate, a connection pad formed on the lower surface or side surface of the insulating substrate, and a metallization disposed on or in the insulating substrate for connecting an element mounted on the upper surface of the insulating substrate and the connection pad. A wiring layer, wherein the insulating substrate has a thermal expansion coefficient of 80 to 180 × 10 in a temperature range of 40 to 400 ° C. consists ^-7 / ° C. of the ceramic sintered body, the metallized wiring layer and the connection pad is made of Cu, in which the metallized wiring layer is characterized by comprising formed by co-firing with said dielectric substrate.

Further, the package mounting structure of the present invention is as follows.
The connection pad of the package is mounted on an external electric circuit board having a wiring conductor attached to an insulator having a thermal expansion coefficient of 12 to 16 ppm / ° C. at 40 to 400 ° C. , Which are mounted by joining them through a brazing material.

In the above package and its mounting structure, a connection terminal made of a brazing material is attached to a connection pad of the package, or a connection terminal made of a spherical or columnar terminal made of a high melting point material is attached to the connection pad. Is desirably brazed with a low melting point brazing material.

Further, the ceramic sintered body preferably has
The coefficient of thermal expansion in the temperature range of 400 ° C. is 60 × 10 ⁻⁷
It is desirable to include a crystal phase composed of a metal oxide of at least / ° C, and it is desirable that the material be fired at 850 to 1300 ° C in order to enhance co-sintering with Cu.

According to the present invention, as an insulating substrate in a package mounted on an external electric circuit board such as a glass-epoxy substrate having a thermal expansion coefficient of 12 to 16 ppm / ° C. at 40 to 400 ° C. 4
The coefficient of thermal expansion in the temperature range of 00 ° C. is 80 to 180 ×
By using a ceramic sintered body of 10 ^-7 / ° C, the difference between the thermal expansion coefficients of the insulating substrate and the external electric circuit board is reduced, and as a result, the thermal expansion of the insulating substrate and the external electric circuit board is reduced. The connection terminals and the wiring conductors of the external electric circuit do not cause a connection failure due to the thermal stress caused by the difference in the coefficient, so that the semiconductor element housed in the container and the external electric circuit board can be accurately connected for a long time. In addition, it is possible to make a strong electrical connection.

Further, by using a ceramic sintered body containing a crystal phase composed of a metal oxide having a thermal expansion coefficient of 60 × 10 ⁻⁷ / ° C. or more in a temperature range of 40 to 400 ° C. as an insulating substrate, The coefficient is 80 to 180 × 10 ^-7 /
It can be easily controlled in the range of ° C.

Furthermore, by forming the metallized wiring layer of Cu and co-firing it with the insulating substrate,
A package having a multilayer structure made of Cu of the insulating substrate can be formed.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to the accompanying drawings showing an embodiment. 1 and 3 show an embodiment of a package mounting structure for accommodating a BGA type semiconductor element according to the present invention, wherein A is a semiconductor element accommodation package, and B is an external electric circuit board.

The package A for housing a semiconductor element comprises an insulating substrate 1, a lid 2, a metallized wiring layer 3, and connection terminals 4.
And the semiconductor element 5 housed inside the package. The insulating substrate 1 and the lid 2 constitute a container 6 for airtightly housing the semiconductor element 5 inside. That is,
The insulating substrate 1 has a concave portion 1a in the center of the upper surface in which the semiconductor element 5 is placed and accommodated. The semiconductor element 5 is bonded and fixed to the bottom surface of the concave portion 1a via an adhesive such as glass or resin.

A plurality of metallized wiring layers 3 are formed on the insulating substrate 1 from the periphery to the lower surface of the concave portion 1a in which the semiconductor element 5 is mounted and accommodated. As shown in FIG. 2, a large number of concave portions 1b are provided, and connection pads 3a electrically connected to the metallized wiring layer 3 are formed on the bottom surfaces of the concave portions 1b. Solder (tin-lead alloy) is provided on the surface of the connection pad 3a.
A protruding terminal 4 made of a brazing material is attached as a connection terminal 4 to the external electric circuit board B. As a method of attaching the protruding terminal 4, there are a method of arranging a spherical or columnar brazing material on the connection pad 3a, and a method of printing the brazing material on the connection pad 3a by a screen printing method.

The connection terminal 4 attached to the connection pad 3a has a protrusion 4a on the lower surface of the insulating substrate 1,
Connection pad 3a to which each electrode of semiconductor element 5 is connected
Is connected to the wiring conductor 8 of the external electric circuit board B, and the semiconductor element housing package A is connected to the external electric circuit board B.
It works on top.

The metallized wiring layer 3 electrically connected to the connection pad 3a is electrically connected to each electrode of the semiconductor element 5 via a bonding wire 7, so that the electrodes of the semiconductor element are connected. It is electrically connected to the pad 3a. In the external electric circuit board B, the wiring conductor 8 is formed on the surface of the insulator 9.

On the other hand, the external electric circuit board B comprises an insulator 9 and a wiring conductor 8, and the insulator 9 is formed of a printed board made of a material containing at least an organic resin.
Specifically, the coefficient of thermal expansion at 40 to 400 ° C. such as a glass-epoxy composite material is 120 to 160 ×
It is made of an insulating material of 10 ^-7 / ° C. Also, this circuit board B
The wiring conductor 8 formed on the surface of the substrate is usually made of Cu, Au, or the like in view of the consistency of the linear thermal expansion coefficient with the insulator and the good electrical conductivity.
It is made of a metal conductor such as Al, Ni, and Pd-Sn. In addition, the thermal expansion coefficient in the present invention means the linear thermal expansion coefficient.

In order to mount the semiconductor element housing package A on the external electric circuit board B, the insulating substrate 1 of the package A
The protruding terminal 4 made of solder attached to the connection pad 3a on the lower surface is placed and abutted on the wiring conductor 8 of the external electric circuit board B, and then heated at a temperature of about 250 to 400 ° C. As a result, the protruding terminal 4 itself made of a brazing material such as solder is melted, and the terminal 4 is bonded to the wiring conductor 8 to be mounted on the external electric circuit board B. At this time,
It is desirable that a brazing material is formed on the surface of the wiring conductor 8 in order to easily connect the terminal 4 with the brazing material.

As another example, as shown in FIG. 3, as the connection terminal, one obtained by brazing a spherical terminal 10 made of a high melting point material to a connection pad 3a with a low melting point brazing material 11 can be applied. This high melting point material needs to have a higher melting point than the low melting point brazing material used for brazing, and the brazing material is, for example, 40% by weight of Pb-Sn.
When made of low melting point solder of 60% by weight, the spherical terminal 10
Is composed of, for example, a high melting point solder of 90% by weight of Pb-10% by weight of Sn, or a metal such as Cu, Ag, Ni, Al, Au, Pt, and Fe.

In such a configuration, the spherical terminal 10 attached to the connection pad 3a on the lower surface of the insulating substrate 1 of the package A is placed and abutted on the wiring conductor 8 of the external electric circuit board B. 10 can be mounted on the external electric circuit board B by bonding it to the wiring conductor 8 with a brazing material 12 such as solder. Au is used as a low melting point brazing material.
The connection terminal 4 may be connected to the external electric circuit board B using a -Sn alloy, and a columnar terminal may be used instead of the spherical terminal 10.

Next, the mounting structure of the leadless chip carrier (LCC) type package C on the external electric circuit board B will be described with reference to FIG. In FIG. 4, the same members as those in FIG. 1 are denoted by the same reference numerals. In the package C shown in FIG. 4, the metallized wiring layers 3 individually connected to the electrodes of the semiconductor element are led out to the side surfaces of the insulating substrate 1, and the metallized wiring layers 3 led out to the side surfaces are connection terminals that also serve as connection pads. 4. Further, according to the package C, in order to prevent electromagnetic interference, the concave portion 1a for accommodating the semiconductor element 5 is filled with an epoxy resin or the like, and the concave portion is sealed by the lid 13 made of a conductive resin. Further, a conductive layer 14 for grounding is formed on the bottom surface of the package C.

In order to mount the package C on the external electric circuit board B, the connection terminals 4 on the side of the insulating substrate 1 of the package C are placed on the wiring conductors 8 of the external electric circuit board B so as to be in contact with the brazing material. For electrical connection. At this time, the connection terminals 4 are desirably coated with a brazing material on the surface of the wiring conductor 8 in order to facilitate connection with the brazing material.

According to the present invention, as a package for housing a semiconductor element mounted on the surface of such an external electric circuit board B, the insulating substrate 1 is made of a ceramic sintered body and has a temperature of 40 to 400 ° C. Coefficient of thermal expansion in the range of 80 to 180 × 10 ⁻⁷ / ° C., especially 90 to 140 × 10
It is important that it is ^-7 / ° C. This alleviates the occurrence of thermal stress due to the difference in thermal expansion coefficient between the external electric circuit board B and the external electric circuit board B, and maintains a good electrical connection between the external electric circuit board B and the packages A and C for a long period of time. When the coefficient of thermal expansion is smaller than 80 × 10 ⁻⁷ / ° C. or larger than 180 × 10 ⁻⁷ / ° C.,
In any case, the thermal stress caused by the difference in thermal expansion becomes large, and it cannot be prevented that the electrical connection between the external electric circuit board B and the packages A and C deteriorates.

The thermal expansion coefficient of the insulating substrate is 80 to 18
As the temperature increases to 0 × 10 ⁻⁷ / ° C., the difference in thermal expansion from the semiconductor element 5 using Si as a substrate may increase on the contrary. Therefore, it is necessary to appropriately select an adhesive for the semiconductor element to the insulating substrate so that the semiconductor element does not peel off due to a difference in thermal expansion. Desirably, it is desirable to bond with a flexible material capable of buffering the difference in thermal expansion. For example, an epoxy-based or polyimide-based organic adhesive or a metal such as Ag may be blended in some cases. Are preferably used.

Examples of such a ceramic sintered body having a high thermal expansion coefficient include a so-called vitreous sintered body or a glass-ceramic sintered body. A compound having a high thermal expansion itself is added as a glass forming component. As a result, a crystal phase having a high coefficient of thermal expansion is precipitated as a crystal phase in the sintered body to control the coefficient of thermal expansion. As the composition of these sintered bodies, SiO ₂ is an essential component, and other components are alkali metals such as Li, Na, K, Ca, B
a, Sr, alkaline earth metals such as Mg, Al, Zn,
It consists of at least one combination selected from the group consisting of Pb, Ti, Zr, P and B, and has a crystal phase having a high thermal expansion in such a sintered body, specifically having a thermal expansion coefficient at 40 to 400 ° C. of 60. as × 10 ^-7 / ° C. or more crystalline phases, cristobalite (SiO _2), quartz (Si
O ₂ ), tridymite (SiO ₂ ), forsterite (2MgO.SiO ₂ ), spinel (MgO.Al)
₂ O _3), wollastonite (CaO · SiO _2), Monty Sera Knight _{(CaO · MgO · SiO 2)} , nepheline _{(Na 2 O · Al 2 O} 3 · SiO 2), lithium silicate (Li ₂ O · SiO ₂ ), diopside (CaOM)
gO.2SiO ₂ ), melvinite (3CaO.MgO)
.2SiO ₂ ), Akermanite (2CaO.MgO.)
2SiO ₂ ), magnesia (MgO), alumina (Al ₂
O ₃ ), carneginite (Na ₂ O.Al ₂ O ₃ .2SiO)
₂ ), enstatite (MgO.SiO ₂ ), magnesium borate (2MgO.B ₂ O ₃ ), celsian (BaO.
Al ₂ O ₃ .2SiO ₂ ), B ₂ O ₃ .2MgO.2SiO ₂
And a sintered body in which at least one or more selected from the group described above is precipitated. Particularly, a crystal phase of 80 × 10 ⁻⁷ / ° C. or more is preferable.

Further, the metallized wiring layer provided in the insulating substrate 1 of the packages A and C can be formed of Cu, and can be formed by co-firing with the ceramic sintered body.

As a method of manufacturing such packages A and C, a suitable organic binder, a plasticizer, and a solvent are added to and mixed with a raw material powder for forming an insulating substrate, and a slurry is formed. A green sheet (raw sheet) is produced by employing a doctor blade method or a calendar roll method. And the metallized wiring layer 3
And, as the connection pad 3a, a metal paste obtained by adding an organic binder, a plasticizer, and a solvent to a suitable metal powder and mixing is printed and applied on the green sheet in a predetermined pattern by a known screen printing method. Also, in some cases,
An appropriate punching process is performed on the green sheet to form a through hole, and this hole is filled with a metallizing paste. By stacking a plurality of these green sheets and simultaneously firing the green sheets, the metallized wiring layers 3 and the connection pads 3a, a package having a multilayer structure can be obtained.

When co-firing is performed in this way, the meta used
Simultaneous firing of insulating substrate material depending on the type of rise wiring layer
It is necessary to control it. Metallized distribution
When the wire layer is made of Cu, 850 to 1300
Such as SiO, which can be fired at a low temperature of_Two-Mg
O, SiO_Two-Al_TwoO_Three-Na_TwoO, SiO_Two-MgO-
CaO, SiO_Two-Al_TwoO_Three−Li_TwoO, SiO_Two-Mg
O-Li_TwoO, SiO_Two-ZnO-Li_TwoO, SiO_Two-M
gO-BaO, SiO_Two-BaO-Al_TwoO_Three-B_TwoO _Three,
SiO_Two-Na_TwoOP_TwoO_Five-CaO, SiO_Two-Na_TwoO
-Al_TwoO_Three-P_TwoO_Five-ZnO, SiO_Two-BaO-Al_Two
O_Three-MgO-TiO_Two-ZrO_Two, SiO_Two-Al_TwoO_Three−
BaO-Na_TwoA composition such as O is desirable.

[0036]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to more specific examples.

As raw materials, BaCO ₃ , SiO ₂ , B
_{The components} were weighed and mixed using ₂ O ₃ , MgO, ZrO ₂ , Li ₂ O, CaCO _{3 and the} like so as to have the composition shown in Table 1. This mixture was calcined at 850 to 950 ° C., pulverized, added with an organic binder and mixed well, and then subjected to a uniaxial pressing method.
A molded body having a shape of 5 × 3.5 × 15 mm was produced, and the molded body was fired at 900 to 1100 ° C. in an air atmosphere to produce a sintered body.

Next, the crystal phase of the sintered body obtained as described above was identified by X-ray diffraction measurement. 4 more
The coefficient of thermal expansion at 0 to 400 ° C. was measured and is shown in Table 2. The sintered body was processed to a diameter of 60 mm and a thickness of 2 mm,
The relative permittivity was determined by the method of SC2141. The measurement was performed using a Q meter (YHP4284A), and 1 MHz,
The capacitance at 25 ° C. was measured under the condition of 1.0 Vrsm, and the relative dielectric constant at 25 ° C. was measured from the capacitance. The results are shown in Table 2.

(Heat cycle test at mounting) Next, using each of the raw material compositions shown in Table 1, toluene + I
PA, acrylic resin as binder, D as plasticizer
500μm thickness by doctor blade method using BP
Green sheet was produced.

A metallized wiring layer was coated on the surface of the green sheet with a Cu metallized paste by screen printing. Further, a through hole is formed at a predetermined position of the green sheet so that the inside of the through hole is finally exposed on the lower surface of the substrate.
Filled with metallized paste. Then, six green sheets to which the metallizing paste was applied were laminated and pressure-bonded while positioning the through holes.

The metallized wiring layer and the insulating substrate were simultaneously fired in an atmosphere of a binder removal process: N ₂ + H ₂ O and a main firing: N ₂ at each firing temperature (° C.) shown in Table 1 to obtain a package. A wiring board was manufactured.

Next, a concave portion was formed on the lower surface of the wiring substrate at a position connected to the through hole, and a connection pad made of Cu metallization was manufactured. Then, connection terminals made of solder (30 to 10% of tin-70 to 90% of lead) were attached to the connection pads as shown in FIG. The connection terminal is 1 cm ²
It was formed on the entire lower surface of the wiring board at a density of 30 terminals per contact.

On the other hand, a glass-epoxy substrate 40
A printed board was prepared in which a wiring conductor made of copper foil was formed on the surface of an insulator having a thermal expansion coefficient of 130 × 10 ⁻⁷ / ° C. at −800 ° C.

Then, the above-mentioned package insulating substrate is aligned so that the wiring conductor on the printed circuit board and the connection terminal of the package insulating substrate are connected, and this is placed in an N ₂ atmosphere at 260 ° C. for 3 minutes. After heat treatment, the package insulating substrate was mounted on the surface of the printed circuit board. By this heat treatment, it was confirmed that the solder-made connection terminals of the package insulating substrate were melted and electrically connected to the wiring conductors of the printed circuit board.

Next, the test sample was placed in a thermostat controlled at −40 ° C. and 125 ° C. in an air atmosphere in a state where the package insulating substrate was mounted on the printed circuit board surface as described above, and the test sample was placed for 15 minutes / minute. Up to 1,000 cycles were repeated with one cycle of holding for 15 minutes. Then, the electrical resistance between the wiring conductor of the printed circuit board and the package insulating substrate was measured for each cycle, and the number of cycles until the electrical resistance changed was shown in Table 2.

[0046]

[Table 1]

[0047]

[Table 2]

As is clear from the results shown in Tables 1 and 2, in the package insulating substrate manufactured by using a ceramic sintered body having a thermal expansion coefficient of 80 to 180 × 10 ⁻⁷ / ° C. as the insulating substrate,
Even after 1000 cycles of temperature rise and fall, no change in electric resistance was observed between the wiring conductor of the printed circuit board and the insulating substrate for the package, and an extremely stable and favorable electric connection state could be maintained.

[0049]

According to the present invention, when mounted on an external electric circuit board such as a printed board having a large coefficient of thermal expansion,
The generation of stress due to the difference between the two coefficients of thermal expansion is suppressed, and the package and external electric circuit board are accurately
In addition, it is possible to make a strong electrical connection. In addition, a highly reliable package that can sufficiently cope with an increase in the number of pins due to an increase in the size of the semiconductor circuit element can be realized.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a package for housing a BGA type semiconductor element and a mounting structure thereof according to the present invention.

FIG. 2 is an enlarged sectional view of a main part of FIG.

FIG. 3 is an enlarged sectional view of a main part of another embodiment of the connection terminal.

FIG. 4 is a cross-sectional view for explaining a mounting structure of a leadless chip carrier type semiconductor element storage package according to the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating board 1a ... Depression 2 ... Lid 3 ... Metallized wiring layer 3a ... Connection pad 4 ... Connection terminal 4a ... Protrusion 5 ... Semiconductor element 6 ... Container 8 ... Wiring conductor 9 ... Insulator A ... BGA type semiconductor element storage package B ... External electric circuit board C ... LCC type semiconductor element storage package

 ──────────────────────────────────────────────────の Continuing from the front page (72) Inventor Takeshi Kubota 1-1, Yamashita-cho, Kokubu-shi, Kagoshima Inside the Kyocera Corporation Kagoshima Kokubu Plant (72) Inventor Ryuni Kunimatsu 1-1, Yamashita-cho, Kokubu-shi, Kagoshima No. Within the Kyocera Corporation Kagoshima Kokubu Plant (72) Inventor Noriaki Hamada 1-4 Yamashita-cho, Kokubu City, Kagoshima Prefecture Inside the Kyocera Corporation Research Institute (72) Inventor Tsukasa Yanagita 1-4 Yamashita-cho, Kokubu City, Kagoshima Prefecture Inside the Kyocera Research Institute (72) Inventor Masaya Kokubu 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima Inside the Kyocera Research Institute (72) Inventor Hitoshi Kumadahara 1-4-4 Yamashita-cho, Kokubu-shi, Kagoshima No.In Kyocera Research Institute

Claims (6)

[Claims] 1. A ceramic insulating substrate, connection pads formed on the lower surface or side surfaces of the insulating substrate, and a surface or inside of the insulating substrate for connecting an element mounted on the upper surface of the insulating substrate and the connection pads. And a metallized wiring layer disposed thereon, wherein the package is mounted on an external electric circuit board by bonding the connection pads with a brazing material. The metallized wiring layer and the connection pads are made of a ceramic sintered body at 80 to 180 × 10 ⁻⁷ / ° C., and the metallized wiring layer is formed by co-firing with the insulating substrate. package. 2. The package according to claim 1, wherein a connection terminal made of a brazing material is attached to said connection pad. 3. The package according to claim 1, wherein connection terminals comprising spherical or columnar terminals of a high melting point material are brazed to said connection pads with a low melting point brazing material. 4. The method according to claim 1, wherein the ceramic sintered body has a temperature of 40 to 400 ° C.
The package according to any one of claims 1 to 3, comprising a crystal phase composed of a metal oxide having a coefficient of thermal expansion of 60 × 10 ^-7 / ° C or higher in the above temperature range. 5. The ceramic sintered body is 850 to 130.
The package according to any one of claims 1 to 4, wherein the package is fired at 0 ° C. 6. The thermal expansion coefficient at 40 to 400 ° C. is 1
6. An external electric circuit board on which a wiring conductor is formed on the surface of an insulator at 2 to 16 ppm / .degree.
A package mounting structure, wherein the package connection structure is mounted by bonding the connection pad of the package according to any one of the above to the wiring conductor via a brazing material.