JP2002100559A - Substrate processor/processing unit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To install a temperature sensor within a plate to avoid thermal effect from outside. SOLUTION: A bottomed hole 66 is mounted to a plate 63 from its rear plane toward its front plane. A thermoelectric couple 67 is fixed to bottom 66a of bottomed hole 66 so that thermoelectric couple 67 presses from below a stationary plate 68 in the shape fitted to the inner wall of bottomed hole 66. A heat insulating material 69 is installed on the lower side of stationary plate 68, and on the lower side of heat insulating material 69, a pressure member 70 is installed for pressing stationary member 68 and heat insulating material 69 from below. The thermoelectric couple 67 inside the plate 63 ensures to measure a temperature of plate 63 without being affected by external heat source, even if the heat is externally conducted from pressure member 70, because the heat is interrupted by heat insulating member 69.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a substrate processing apparatus.

[0002]

2. Description of the Related Art In a photolithography process in the manufacture of semiconductor devices, a semiconductor wafer (hereinafter, referred to as a semiconductor wafer) is used.
Various heat treatments, such as heat treatment (pre-baking) after applying a resist solution on the surface of a "wafer"), heat treatment after pattern exposure (post-exposure baking), and cooling treatment after each heat treatment Has been done.

[0003] For example, the above-mentioned heat treatment is usually performed by a heat treatment device, and this heat treatment device is provided with a disk-shaped hot plate for mounting and heating a wafer. Has a built-in heater as a heat source. By adjusting the amount of heat generated by the heater, the temperature of the hot plate is adjusted, and the wafer placed on the hot plate can be heated at a predetermined temperature. In order to adjust the heater in this way, it is necessary to measure the temperature of the hot plate. This measurement is usually realized by providing a temperature sensor on the hot plate.

The installation of the temperature sensor is performed by, for example, providing a bottomed hole from the back surface to the front surface of the hot plate and providing the temperature sensor at the bottom. In this case, it is necessary to press the temperature sensor from below with a pressing plate or a pressing rod so that the temperature sensor is in close contact with the hot plate and does not drop.

[0005]

However, if the temperature sensor is simply held down by a holding rod or the like, heat from the outside is conducted through the holding member, and the temperature of the hot plate near the temperature sensor changes. As a result, the accurate temperature of the hot plate cannot be measured. If the hot plate temperature cannot be measured accurately, the heater is not properly adjusted, and the wafer is not heated at a predetermined temperature.
There is a concern that the yield will decrease.

In recent years, there has been a tendency to reduce the thickness of the hot plate in order to improve the responsiveness of the temperature of the hot plate. May directly affect the wafer.

SUMMARY OF THE INVENTION The present invention has been made in view of the foregoing, and has been made in consideration of the above circumstances, and has been made in view of the above circumstances. It is an object of the present invention to provide a substrate processing apparatus capable of accurately measuring a plate temperature.

[0008]

According to a first aspect of the present invention, there is provided a substrate processing apparatus having a heat treatment plate for heat-treating a substrate by mounting the substrate on a front surface of the heat treatment plate. A bottomed hole provided toward the front side,
A temperature sensor provided in the bottomed hole, for measuring the temperature of the heat-treated plate, a fixing member for fixing the temperature sensor to the bottom of the bottomed hole, and a pressing member for pressing the fixing member. , An intermediate member sandwiched between the fixing member and the pressing member, wherein a heat insulating material is used for the intermediate member.

As described above, the temperature sensor provided at the bottom of the bottomed hole of the heat treatment plate is fixed by the fixing member, and the fixing member and the pressing member for pressing the fixing member are provided between the fixing member and the pressing member.
By sandwiching the intermediate member using the heat insulating material, external heat from the pressing member is blocked by the intermediate member, and conduction of external heat to the temperature sensor and the heat treatment plate around the temperature sensor is suppressed. Therefore, the temperature sensor can measure an accurate temperature of the heat-treated plate without being affected by external heat.

[0010] In the invention of claim 1, claim 2
As described above, a material having the same or higher thermal conductivity as the heat-treated plate may be used for the fixing member. As described above, by using a material having excellent thermal conductivity as the material of the fixing member, the temperature of the heat treatment plate is quickly transmitted to the fixing member, and the responsiveness of the heat of the fixing member to the heat treatment plate is improved. Therefore, even if the temperature of the heat-treated plate changes and the temperature of the heat-treated plate fluctuates,
Even when the temperature of the fixed member and the temperature of the heat-treated plate are substantially the same, and the temperature sensor is in contact with the fixed member, the accurate temperature of the heat-treated plate can be measured. It should be noted that the material having the same thermal conductivity as the heat-treated plate does not need to be exactly the same, and may have a lower thermal conductivity than the heat-treated plate if it does not hinder the measurement of the temperature sensor. There may be.

In each of the above-described substrate processing apparatuses according to the first and second aspects, the intermediate member may have a hollow inside. By making the intermediate member hollow, the solid portion to which heat is easily transmitted is reduced, and the heat insulating property of the intermediate member is improved. Therefore, since the intermediate member further blocks external heat, the temperature sensor can measure an accurate temperature of the heat-treated plate without being affected by external heat.

Further, the peripheral surface of the fixing member may have a shape adapted to the inner wall of the bottomed hole. In this way, by forming the peripheral surface of the fixing member into a shape adapted to the inner wall of the bottomed hole, heat of the heat-treated plate is easily conducted to the fixing member, and the temperature and temperature of the heat-treated plate can be more quickly and completely reduced. The temperature of the fixing member can be matched. Therefore, the temperature of the temperature sensor in contact with the heat-treated plate and the fixing member is appropriately measured, and the temperature of the heat-treated plate can be accurately measured.

Further, a heat insulating material may be used for the pressing member. As described above, by using the heat insulating material for the pressing member, conduction of external heat through the pressing member can be suppressed.

In each of the substrate processing apparatuses according to the first to fifth aspects, the temperature sensor is configured to detect a temperature of the heat-treated plate, and a metal connected to the detection section. And the detection unit may be provided at the bottom of the bottomed hole, and the metal wire may have an extension extending from the detection unit along the bottom of the bottomed hole. .

When the temperature sensor is composed of a detecting portion and a metal wire, a metal wire near the detecting portion picks up heat around the metal wire and transfers the heat to the detecting portion. Therefore, the temperature measured by the detection unit is actually greatly affected by the temperature of the metal wire near the detection unit. Therefore, as in claim 6, the metal wire has an extending portion extending from the detecting portion along the bottom of the bottomed hole, and the extending portion of the metal wire and the detecting portion are positioned under the same condition. That is, it was arranged at the bottom of the bottomed hole, and the temperature of the extension section was the same as the temperature of the detection section. By doing so, the temperature can be accurately measured without the detection unit being able to change the measurement temperature by the metal wire.

In the sixth aspect of the present invention, the seventh aspect of the present invention provides
As described above, a recess may be formed at the bottom of the bottomed hole, and the detection unit of the temperature sensor may be provided in the recess. As described above, by providing the detecting portion of the temperature sensor in the concave portion formed at the bottom of the bottomed hole, the detecting portion can easily detect the temperature of the heat-treated plate. Can be measured. Further, the recess may be formed so as to conform to the outer shape of the detection unit. By doing so, the contact area between the detection section and the heat-treated plate increases, and the temperature of the heat-treated plate can be measured more accurately.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below. FIG. 1 is a plan view of a coating and developing system 1 having a substrate processing apparatus according to the present invention.
FIG. 2 is a front view of the coating and developing treatment system 1, and FIG.
2 is a rear view of the coating and developing system 1. FIG.

As shown in FIG. 1, the coating and developing system 1 carries in and out, for example, 25 wafers W into and out of the coating and developing system 1 in units of cassettes, and carries in and out wafers W into and from the cassette C. A cassette station 2 for unloading, a processing station 3 in which various processing apparatuses for performing predetermined processing in a single-sheet type in a coating and developing processing step are arranged in multiple stages, and provided adjacent to the processing station 3. An interface unit 4 for transferring a wafer W to and from an exposure apparatus (not shown) is integrally connected.

In the cassette station 2, a plurality of cassettes C can be placed in a row in the X direction (the vertical direction in FIG. 1) at predetermined positions on a cassette mounting table 5 serving as a mounting portion. Then, the cassette arrangement direction (X direction) and the wafer arrangement direction (Z
(A vertical direction) is provided movably along a transfer path 8 so that each cassette C can be selectively accessed.

The wafer carrier 7 has an alignment function for positioning the wafer W. As will be described later, the wafer carrier 7 is configured to be able to access the extension device 32 belonging to the third processing device group G3 on the processing station 3 side.

In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In the coating and developing system 1,
Four processing unit groups G1, G2, G3, G4 are arranged, the first and second processing unit groups G1, G2 are arranged on the front side of the development processing system 1, and the third processing unit group G3 is , Disposed adjacent to the cassette station 2, and a fourth processing unit group G4
Are arranged adjacent to the interface unit 4.
A fifth processing unit group optionally indicated by a broken line
G5 can be placed separately on the back side. The main transfer unit 13 is provided with a group of these processing units G1, G3, G4, G5.
The wafer W can be loaded and unloaded to and from various processing apparatuses described below. Note that the number and arrangement of the processing device groups differ depending on the type of processing performed on the wafer W, and the number of processing device groups need not be four as long as it is one or more.

In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating unit 17 for coating a resist solution on the wafer W and a developing unit 18 for developing the exposed wafer W are arranged below. , And are arranged in two stages in this order. Similarly, in the case of the processing device group G2, the resist coating device 19 and the developing device 20 are stacked in two stages from the bottom in the same manner.

In the third processing unit group G3, for example, as shown in FIG.
0, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, an extension device 32 for holding the wafer W on standby, pre-baking devices 33 and 34 for drying the solvent in the resist solution, and a heating process after the development process. Post-baking devices 35 and 36 to be applied are stacked in, for example, seven stages from the bottom.

The fourth processing unit group G4 includes, for example, a cooling device 40, an extension cooling device 41 for naturally cooling the mounted wafer W, an extension device 42, a cooling device 43, and a substrate processing device according to the present embodiment. The post-exposure baking devices (hereinafter referred to as “PEB devices”) 44 and 45 and the post-baking devices 46 and 47 are stacked in order from the bottom, for example, in eight stages.

A wafer carrier 50 is provided at the center of the interface section 4. The wafer transfer body 50 is configured to freely move in the X direction (vertical direction in FIG. 1), the Z direction (vertical direction), and rotate in the θ direction (rotation direction about the Z axis). , The extension cooling device 41, the extension device 42, the peripheral exposure device 51, and the exposure device (not shown) belonging to the fourth processing device group G4, and
Can be transported.

Next, the configuration of the above-described PEB device 44 will be described. As shown in FIG.
Has a lid body 60 located on the upper side and movable up and down, and a hot plate housing part 61 located on the lower side and forming the processing chamber S integrally with the lid body 60.

The lid 60 has a substantially conical shape that gradually rises toward the center, and an exhaust portion 60a is provided at the top. The atmosphere in the processing chamber S is uniformly exhausted from the exhaust part 60a.

On the other hand, the hot plate accommodating section 61 is provided with a hot plate 63 as a heat treatment plate on which the wafer W is placed and heated. The hot plate 63 is formed in a thin disk shape having a thickness of, for example, about 2 to 10 mm, and is made of a material having excellent thermal conductivity, such as silicon carbide or aluminum nitride.

On the back surface of the hot plate 63, a heater 64, which is a heat source serving as a heat source of the hot plate 63, is provided by using a printing technique. The amount of heat generated by the heater 64 is controlled by a temperature control device 65. It has become so. In addition, hot plate 63
Is provided with a bottomed hole 66 having a predetermined depth from the back surface to the front surface of the hot plate 63, and the bottomed hole 66 is a measuring means for measuring the temperature of the hot plate 63. A thermocouple 67 as a temperature sensor is installed by an installation mechanism K described later. The value measured by the thermocouple 67 is input to the temperature control device 65. Therefore, the temperature control device 65 that has received the measured temperature of the hot plate 63 controls the amount of heat generated by the heater 64 based on the measured value, adjusts the hot plate 63 to a predetermined temperature, and mounts the hot plate 63 on the hot plate 63. The mounted wafer W can be heated at a predetermined temperature.

Here, the installation mechanism K for installing the thermocouple 67 in the bottomed hole 66 will be described in detail. The thermocouple 67 is provided at the bottom 66a of the bottomed hole 66 as shown in FIG. . Below the thermocouple 67, a thermocouple 6
Fixing plate 6 as a fixing member for fixing 7 from below
8 are provided. Below the fixing plate 68, a heat insulating member 69 as an intermediate member made of a heat insulating material, for example, resin, porous ceramic, or the like is provided.
Further, a pressing member 70 for pressing the thermocouple 67, the fixing plate 68, and the heat insulating member 69 from below is provided below the heat insulating member 69. The lower end of the holding member 70 is fixed and supported on a support base 79 described later.

The above-mentioned thermocouple 67 has a detecting portion 67a for detecting the temperature of the hot plate, and a metal wire 67b extending from the detecting portion 67a to the temperature control device 65. The metal wire 67b is moved from the detector 67a to the bottom 6 of the bottomed hole 66.
6 a, and then extend outside the bottomed hole 66 along the inner wall of the bottomed hole 66.

The fixing plate 68 is formed in a disk shape having substantially the same diameter as the bottomed hole 66, and its outer peripheral surface is adapted to the inner wall of the bottomed hole 66. As the material of the fixing plate 68, the same ceramic having good thermal conductivity as the hot plate 63 is used. The heat insulating member 69 has a cylindrical outer shape, and has a hollow portion 69a formed therein as shown in FIG. As a material of the pressing member 70, a heat insulating material, for example, a porous ceramic is used, so that heat from a support 79 to be described later is not easily conducted to the pressing member 70.

On the other hand, below the hot plate 63, as shown in FIG. 4, lift pins 75 for supporting and raising and lowering the wafer W when loading and unloading the wafer W are provided. Is configured to be movable up and down by a lifting drive mechanism 76. A hole 77 is provided near the center of the hot plate 63 so as to penetrate the hot plate 63 in the vertical direction.
The lifting pin 75 is configured to penetrate through the hole 77 and protrude above the hot plate 63.

The hot plate accommodating portion 61 has a support member 78 for supporting the outer edge of the hot plate 63 and a support 79 for supporting the support member 78. A heat insulating material is used for the support member 78 so that the heat of the hot plate 63 is not released to the outside. Further, the support base 79 is formed in a substantially cylindrical shape having an open upper surface, and supports the support member 78 at an upper portion thereof.

Further, the hot plate accommodating portion 61 includes a support member 78.
Cylindrical support ring 80 surrounding the support ring 79
have. The support ring 80 includes a processing chamber S
For example, a blowing port 8 for blowing out an inert gas toward the inside.
0a is provided, and the inside of the processing chamber S can be purged. Outside the support ring 80, a cylindrical case 81 that is the outer periphery of the hot plate housing 61 is provided.

Next, the PEB constructed as described above
The operation of the device 44 will be described together with the photolithography process performed in the coating and developing processing system 1.

First, the wafer carrier 7 takes out one unprocessed wafer W from the cassette C and carries it into the adhesion device 31 belonging to the third processing unit group G3. In this adhesion apparatus 31, the wafer W coated with an adhesion enhancer such as HMDS for improving the adhesion with the resist solution is applied.
Is transported by the main transport unit 13 to the cooling device 30 and cooled to a predetermined temperature. After that, the wafer W is
Resist coating device 17 or 19, pre-baking device 33
Or, they are sequentially conveyed to and subjected to predetermined processing. After that, the wafer W is transferred to the extension cooling device 4.
It is transported to 1.

Next, the wafer W is taken out of the extension cooling device 41 by the wafer transfer body 50, and then transferred to the exposure device (not shown) via the peripheral exposure device 51. The wafer W after the exposure processing is
After being transferred to the extension device 42 by the wafer transfer body 50, it is held by the main transfer device 13. Next, the wafer W is transferred to the PEB device 44 or 45 where the heat treatment is performed.

Then, the wafer W after the heat treatment is
The cooling device 43, the developing device 18 or 20, the post-baking devices 35, 36, 4
6 or 47, are sequentially conveyed to the cooling device 30, and are subjected to predetermined processing in each device. After that, the wafer W
Is returned to the cassette C by the wafer carrier 7 via the extension device 32, and a series of predetermined coating and developing processes is completed.

Next, the operation of the above-described PEB device 44 will be described in detail. First, before starting the heat treatment of the wafer W, the temperature of the hot plate 63 is heated to a predetermined temperature and maintained. At this time, the thermocouple 67 sequentially measures the temperature of the hot plate 63, and the data is input to the temperature control device 65. The temperature control device 65 that has received the data adjusts the heater 64 based on the data, so that the temperature of the hot plate 63 is heated and maintained at a predetermined temperature. At this time, since the heat insulating member 69 is provided between the pressing member 70 and the fixing plate 68, the thermocouple 67 can accurately measure the hot plate temperature without being affected by external heat.

When the heat treatment is started, the lid 6
0 is raised by a drive mechanism (not shown), and the wafer W, which has been subjected to the previous process, that is, the pattern exposure processing, is carried into the PEB device 44 by the main transfer device 13. Then, the wafer W carried into the PEB device 44 is supported on the elevating pins 75 which have been waiting at a predetermined position above the hot plate 63 in advance.

Next, the lid 60 is lowered, and the processing chamber S is formed integrally with the hot plate accommodating section 61. At this time,
The supply of the inert gas is started from the outlet 80a of the support ring 80. The inert gas is exhausted from the exhaust unit 60a through the processing chamber S to generate an airflow, and the atmosphere in the processing chamber S is purged until the heating process is completed.

After that, the wafer W is lowered together with the lift pins 75 by the lift drive mechanism 76 and placed on the hot plate 63. Then, heating is started at the same time when the wafer W is placed. Thereafter, the wafer W is heated for a predetermined time.
Even during this heating, accurate temperature measurement by the thermocouple 67 is sequentially performed in order to maintain the temperature of the hot plate 63 at a predetermined temperature, and adjustment of the heater 68 by the temperature control device 65 is performed based on the measurement result. Is being done.

After a lapse of a predetermined time, the wafer W is raised again by the lifting pins 75, and the heating by the hot plate 63 is completed. Next, the lid 60 is raised, and the processing chamber S is opened. Then, the wafer W is transferred from the elevating pins 75 to the main transfer device 13, the wafer W is unloaded from the PEB device 44, and a series of heating processes is completed.

When the recipe for wafer processing is changed and the heating temperature is changed, the set temperature of the hot plate 63 is changed. Also at this time, the heating value of the heater 68 is adjusted based on the temperature measurement of the thermocouple 67, and the heating plate 63 is heated to the changed predetermined temperature. At this time, a fixing plate 68 that contacts the thermocouple 67 and fixes the thermocouple 67 from below.
Is made of the same material as the heat plate 63 having excellent heat conductivity, and is formed in a shape that fits the inner wall of the bottomed hole 66 as described above. Thus, the temperature of the hot plate 63 is almost always maintained. Therefore, even when the temperature of the hot plate fluctuates, the thermocouple 67 can measure the accurate temperature of the hot plate 63 in real time.

According to the above embodiment, the holding member 7
Since the heat insulating member 69 is provided between the base plate 0 and the fixing plate 68, the conduction of heat from the outside, that is, from the support base 79 side is cut off, and the temperature of the hot plate is maintained without thermal influence.・
The temperature of the thermocouple 67 at the time of adjustment is appropriately measured.
Further, since the inside of the heat insulating member 69 is hollow, the heat insulating property of the heat insulating member 69 is further improved, and external heat is more effectively blocked.

Further, the same material having good thermal conductivity as that of the hot plate 63 is used for the fixing plate 68 for fixing the thermocouple 67.
Since the fixing plate 68 is formed into a shape that fits the inner wall of the bottomed hole 66, the fixing plate 68 can quickly respond to a change in the temperature of the hot plate, and can always maintain substantially the same temperature as the hot plate temperature. Therefore, even when the temperature of the hot plate fluctuates rapidly, the fixing plate 68
Can accurately measure the hot plate temperature.

Further, since a heat insulating material is used for the holding member 70, conduction of heat of the support 79 to the holding member 70 can be suppressed.

Also, close to the detector 67a of the thermocouple 67,
The metal wire 67 b as an extension is connected to the bottom 66 of the bottomed hole 66.
a, a metal wire 67b that is close to the detection section 67a and that affects the detection temperature, is connected to the detection section 67a.
Since it can be arranged at the bottom 66a of the bottomed hole 66, which is the same as a, the detection of the hot plate temperature by the detection section 67a is performed more accurately.

In the above embodiment, the detecting portion 67a of the thermocouple 67 is provided between the bottom 66a of the bottomed hole 66 and the fixing plate 68. However, as shown in FIG.
A concave portion 66b may be provided in the bottom portion 66a of the sensor 6, and the detecting portion 67a may be fitted in the concave portion 66b. The concave portion 66b is formed so as to conform to the outer shape of the detecting portion 67a. When the detecting portion 67a is spherical as in the present embodiment, the concave portion 66b is formed in a hemispherical shape. Thus, the detection unit 6
The contact area between the detecting portion 67a and the hot plate 63 is increased by fitting the 7a into the concave portion 66b, so that the temperature of the hot plate 63 can be detected more accurately.

In the above embodiment, the fixing member 6
Although the same material as the hot plate 63 is used for 8, a material having a higher thermal conductivity than the hot plate 63, for example, aluminum, copper, or the like may be used. By doing so, the heat conductivity of the fixing member 68 is improved, so that the heat of the hot plate 63 is absorbed more quickly, and the responsiveness of the heat to the hot plate 63 is improved. Therefore, even when the temperature of the hot plate is suddenly changed, the temperature difference between the hot plate 63 and the fixing member 68 can be further reduced, and the thermocouple 67 can measure the hot plate temperature more accurately.

Although the substrate processing apparatus according to the above embodiment has been described with respect to the PEB apparatus 44 or 45, other heat processing apparatuses such as the pre-bake apparatus 33 or 34 and the post-bake apparatus 35, 36, 46 or 47 may be used. Can also be applied. Further, the present invention can be applied to a cooling device 30, 40, or 43 having a cooling plate on which a wafer W is placed and cooled.

In the above-described embodiment, the processing apparatus for the wafer W in the photolithography step of the semiconductor wafer device manufacturing process has been described.
The present invention can be applied to a processing apparatus for a substrate other than a semiconductor wafer, for example, an LCD substrate.

[0054]

According to the first to eighth aspects, conduction of heat from the outside to the hot plate or the temperature sensor via the pressing member can be suppressed, so that the temperature sensor can be accurately measured. Therefore, since the temperature of the heat-treated plate can be maintained and adjusted accurately, the substrate mounted on the heat-treated plate is processed at an appropriate temperature, and the yield is improved.

In particular, according to the second aspect, since a material having the same or higher thermal conductivity as the heat-treated plate is used for the fixing member, the heat response of the fixing member to the heat-treated plate is improved, and the fixing member is improved. Temperature difference between the heat-treated plate and the heat-treated plate can be kept small. Therefore, even if the temperature sensor is in contact with the fixing member, the temperature of the heat-treated plate can be accurately measured. Further, even when the temperature of the heat-treated plate is changed, the temperature of the fixing member quickly responds to the temperature change of the heat-treated plate, so that the temperature sensor can quickly and accurately measure the temperature of the heat-treated plate. Therefore, the temperature adjustment of the heat-treated plate performed based on the measurement result is also performed quickly and accurately, and the throughput and the yield of the substrate processing performed on the heat-treated plate are improved.

According to the third aspect, since the intermediate member can more reliably shut off heat from the outside, the measurement of the temperature sensor can be performed more accurately.

According to the fourth aspect, the temperature of the fixing member is stabilized, and the measurement of the temperature sensor is performed more accurately.

According to the fifth aspect, the transfer of heat from the outside via the pressing member can be suppressed, and the temperature of the heat-treated plate can be accurately measured.

According to the sixth aspect, the temperature measurement of the temperature sensor is appropriately performed, the processing of the substrate mounted on the heat-treated plate is performed at an appropriate temperature, and the yield is improved.

According to claim 7 or 8, the temperature sensor is:
The temperature of the heat-treated plate can be measured more accurately and quickly.

[Brief description of the drawings]

FIG. 1 is a plan view schematically showing the configuration of a coating and developing system having a PEB apparatus according to an embodiment of the present invention.

FIG. 2 is a front view of the coating and developing system of FIG.

FIG. 3 is a rear view of the coating and developing system of FIG. 1;

FIG. 4 is an explanatory diagram of a longitudinal section of the PEB device according to the present embodiment.

FIG. 5 is an explanatory view of a longitudinal section showing a mechanism for installing a thermocouple on a hot plate of a PEB device.

FIG. 6 is an explanatory view of a longitudinal section of a heat insulating member.

FIG. 7 is an explanatory view of a vertical cross section of a hot plate when a concave portion is provided at the bottom of a bottomed hole.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 coating / developing processing system 44 PEB device 63 hot plate 66 bottomed hole 66 a bottom 67 thermocouple 68 fixing plate 69 heat insulating member 70 pressing member K installation mechanism S processing chamber W wafer

Claims (8)

[Claims] 1. A substrate processing apparatus having a heat-treating plate for heat-treating a substrate mounted on a front surface thereof, wherein the heat-treating plate has a bottomed hole provided from the back surface side to the front surface side; A temperature sensor for measuring the temperature of the heat-treated plate, a fixing member for fixing the temperature sensor to the bottom of the bottomed hole, a pressing member for pressing the fixing member, the fixing member and the fixing member. An intermediate member sandwiched between the holding member and a holding member, wherein the intermediate member is made of a heat insulating material. 2. The substrate processing apparatus according to claim 1, wherein the fixing member is made of a material having the same or higher thermal conductivity as the heat-treated plate. 3. The substrate processing apparatus according to claim 1, wherein the intermediate member has a hollow inside. 4. The fixing member according to claim 1, wherein a peripheral surface of the fixing member has a shape adapted to an inner wall of the bottomed hole.
4. The substrate processing apparatus according to any one of 2 and 3. 5. The substrate processing apparatus according to claim 1, wherein a heat insulating material is used for the holding member. 6. The temperature sensor has a detection unit for detecting the temperature of the heat-treated plate, and a metal wire connected to the detection unit, and the detection unit is provided at a bottom of the bottomed hole. ,
The substrate processing apparatus according to any one of claims 1, 2, 3, 4, and 5, wherein the metal wire has an extending portion extending from the detecting portion along a bottom of the bottomed hole. . 7. The substrate processing apparatus according to claim 6, wherein a concave portion is formed at a bottom of the bottomed hole, and a detecting portion of the temperature sensor is provided in the concave portion. apparatus. 8. The substrate processing apparatus according to claim 7, wherein the recess is formed so as to conform to an outer shape of the detection unit.