JP2002099070A - Photomask for exposure - Google Patents
Photomask for exposureInfo
- Publication number
- JP2002099070A JP2002099070A JP2000286716A JP2000286716A JP2002099070A JP 2002099070 A JP2002099070 A JP 2002099070A JP 2000286716 A JP2000286716 A JP 2000286716A JP 2000286716 A JP2000286716 A JP 2000286716A JP 2002099070 A JP2002099070 A JP 2002099070A
- Authority
- JP
- Japan
- Prior art keywords
- exposure
- light
- shielding portion
- photosensitive resin
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、紫外光を用いて微
細加工を行う際の露光方法、特に感光性樹脂の膜厚を複
数作成する露光用フォトマスクに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure method for performing fine processing using ultraviolet light, and more particularly to an exposure photomask for forming a plurality of photosensitive resin film thicknesses.
【０００２】[0002]
【従来の技術】従来のフォトリソグラフィー、エッチン
グ工程は感光性樹脂の下地の残すべき領域には感光性樹
脂をパターニングして形成し、その後のエッチング工程
で下地がエッチングされるのを防ぎ、それ以外の感光性
樹脂のない下地はエッチングされ、下地をパターニング
していた。そして下地が変わるたびに、このようなフォ
トリソグラフィー、エッチング工程を繰り返していた。
そのために高価な露光装置を多く要するとともに、工程
数が多くなり製造価格を押し上げる要因となっていた。2. Description of the Related Art In a conventional photolithography and etching process, a photosensitive resin is patterned and formed in a region where a base of a photosensitive resin should be left, and the base is prevented from being etched in a subsequent etching process. The base without photosensitive resin was etched and the base was patterned. Each time the underlayer changes, such photolithography and etching steps are repeated.
For this reason, many expensive exposure apparatuses are required, and the number of processes is increased, which is a factor that increases the manufacturing cost.
【０００３】このように従来のフォトリソグラフィー工
程では感光性樹脂があるか、ないかのどちらかであった
が最近、下地層を複数一括して作成するとともにグレー
トーン露光と呼ばれる方法で感光性樹脂の膜厚を複数
（通常の膜厚以外に膜厚の薄いもの）作成し、その後の
エッチング工程で感光性樹脂の膜厚に応じて複数の下地
層のエッチング領域を変える方法が提案されている。As described above, in the conventional photolithography process, there was either a photosensitive resin or no photosensitive resin. Recently, however, a plurality of underlayers have been collectively formed and the photosensitive resin has been formed by a method called gray-tone exposure. A method has been proposed in which a plurality of film thicknesses (thin film thicknesses other than the normal film thickness) are formed, and the etching regions of a plurality of underlayers are changed in the subsequent etching step according to the film thickness of the photosensitive resin. .
【０００４】図８（ａ）にある様に、基板に下地層１、
下地層２を連続的に成膜し、下地層の上に感光性樹脂の
膜厚の異なるものを作成する（図８（ｂ））。その後、
エッチングを行い感光性樹脂の厚い部分は下地層２ま
で、感光性樹脂の薄い部分は下地層１まで残し（図８
（ｃ））、感光性樹脂のない部分は下地層を除去するこ
とを１回のフォトリソグラフィー工程で行っている。[0004] As shown in FIG.
The underlayer 2 is formed continuously, and a photosensitive resin having a different thickness is formed on the underlayer (FIG. 8B). afterwards,
Etching is performed to leave the thick portion of the photosensitive resin up to the underlayer 2 and the thin portion of the photosensitive resin up to the underlayer 1 (FIG. 8).
(C), the portion without the photosensitive resin is subjected to a single photolithography step to remove the underlayer.
【０００５】なお、このグレートーン露光で用いられる
露光用フォトマスクは通常、図９に示すように感光性樹
脂をパターニングする露光機の解像度以下の微細パター
ンの組み合わせにより作成されている。解像度以下の遮
光部と非遮光部が混在する微細パターンにより回折光が
遮光部にも回り込み、微細パターン部は解像度以上の大
きさの非遮光部に比べ、全体として少量の平均化された
光量となり感光性樹脂の膜厚が薄くなる。なお、フォト
マスクの光量を制御するには、遮光物質（通常はクロ
ム）の厚さを変えればよいが、フォトマスク作成のため
の成膜回数が増えるため、従来と同様に作成できる前記
した微細パターンによる方法を採っている。[0005] The exposure photomask used in the gray-tone exposure is usually formed by a combination of fine patterns having a resolution equal to or less than the resolution of an exposing machine for patterning a photosensitive resin as shown in FIG. Diffracted light also reaches the light-shielding part due to the fine pattern in which the light-shielding part and the non-light-shielding part that are less than the resolution coexist, and the fine pattern part has a small amount of averaged light amount as a whole compared to the non-light-shielding part that is larger than the resolution. The thickness of the photosensitive resin is reduced. In order to control the amount of light of the photomask, the thickness of the light-shielding substance (usually, chromium) may be changed. The method by the pattern is adopted.
【０００６】[0006]
【発明が解決しようとする課題】このように、次工程の
エッチングを考えると、グレートーン露光で作成する感
光性樹脂の膜厚を制御すること、ならびに感光性樹脂の
平坦度が重要である。しかしながら、このグレートーン
露光では複数作成する感光性樹脂の膜厚を容易に制御で
きないという問題があった。つまり、どのような微細パ
ターンを作れば感光性樹脂の膜厚はどれ位になるか不明
であった。As described above, in consideration of the etching in the next step, it is important to control the thickness of the photosensitive resin formed by gray-tone exposure, and to determine the flatness of the photosensitive resin. However, this gray-tone exposure has a problem in that the thickness of a plurality of photosensitive resins cannot be easily controlled. In other words, it was unclear what kind of fine pattern was to be formed and how thick the photosensitive resin would be.
【０００７】そこで遮光部、非遮光部の様々なパターン
のフォトマスクを作り、予め決められた露光量で露光
し、グレートーン露光部の膜厚を計測し、必要なパター
ンを決定しなければいけなかった。また、グレートーン
露光部の膜厚は微細パターンによる光量分布により決ま
るため、膜厚の平坦性をとることが難しいという問題が
あった。そこで、本発明では上記の問題点に鑑み、グレ
ートーン露光部の膜厚予測用のフォトマスクが不要とな
り、平坦性の優れた感光性樹脂膜を作成する露光用フォ
トマスクを提供することを目的とする。Therefore, photomasks having various patterns of light-shielding portions and non-light-shielding portions must be prepared, exposed with a predetermined exposure amount, the thickness of the gray-tone exposed portions must be measured, and the necessary pattern must be determined. Did not. In addition, since the thickness of the gray-tone exposed portion is determined by the distribution of the amount of light by the fine pattern, there is a problem that it is difficult to obtain a flat film thickness. Therefore, in view of the above problems, the present invention eliminates the need for a photomask for estimating the thickness of a gray-tone exposed portion, and aims to provide an exposure photomask for forming a photosensitive resin film having excellent flatness. And
【０００８】[0008]
【課題を解決するための手段】上記のグレートーン露光
部の感光性樹脂膜厚を制御する目的を達成するために、
遮光部と非遮光部の面積割合は、前記面積割合に基づき
求められる単位面積当たりの平均露光量と、前記感光性
樹脂の膜厚と露光量の関係において露光量に前記平均露
光量の値を入力して得られる膜厚と、により決定される
露光用フォトマスクとすることであり、平坦性の優れた
感光性樹脂を作成する目的を達成するためには、第一に
開口数ＮＡの投影露光機で露光波長λで露光した際の解
像寸法を与えるｄ（ｄ＝λ／ＮＡ）のｄ／５より小さな
寸法で遮光部及び非遮光部を作成すること、第二にフォ
トマスクと基板に塗布された感光性樹脂の距離がｇの密
着露光機で露光波長λで露光した際の解像寸法を与える
ｄ（ｄ＝（２λｇ）0.5）のｄ／５より小さな寸法で遮
光部及び非遮光部を作成すること、第三に端部までより
均一な膜厚を得るためには前記遮光部の隣接する遮光部
は上下、左右ともｄ／５以内の寸法でずらした露光用フ
ォトマスクとすることである。In order to achieve the above object of controlling the thickness of the photosensitive resin in the gray-tone exposed portion,
The area ratio of the light-shielding portion and the non-light-shielding portion is the average exposure amount per unit area determined based on the area ratio, and the value of the average exposure amount to the exposure amount in the relationship between the thickness and the exposure amount of the photosensitive resin. In order to achieve the purpose of producing a photosensitive resin having excellent flatness, it is necessary to first project the numerical aperture NA. Creating a light-shielding portion and a non-light-shielding portion with a dimension smaller than d / 5 of d (d = λ / NA) which gives a resolution dimension when exposed at an exposure wavelength λ by an exposure machine; second, a photomask and a substrate The distance between the photosensitive resin applied to the light-shielding portion and the non-light-shielding portion is smaller than d / 5 (d = (2λg) 0.5 ), which gives a resolution dimension when exposed at an exposure wavelength λ with a contact exposure device of g. Third, to create a light-shielding part, to obtain a more uniform film thickness up to the end The light-shielding portion adjacent to the light-shielding portion may be an exposure photomask shifted vertically and horizontally by a dimension within d / 5.
【０００９】[0009]
【発明の実施の形態】（実施の形態１）次に本発明の実
施例を図面を用いて説明する。図１（ａ）、（ｂ）は本
発明の実施例で遮光部１と非遮光部２を繰り返して作成
したグレートーン露光用フォトマスクである。図１
（ａ）では遮光部１の大きさは０．３μｍ×０．３μｍ
で０．３μｍの非遮光部２の間隔をおいて同じ大きさの
遮光部１が繰り返されている。図１（ｂ）では遮光部１
の大きさは０．５μｍ×０．５μｍで０．１５μｍの非
遮光部２の間隔をおいて同じ大きさの遮光部１が繰り返
されている。なお遮光部１は通常のフォトマスクと同じ
くクロムを蒸着させて作成している。遮光部、非遮光部
が混在している部分の単位面積当たりの非遮光部の面積
割合は、図１（ａ）では、（０．６×０．６−０．３×
０．３）／（０．６×０．６）＝０．７５となり、また
図１（ｂ）では、（０．６５×０．６５−０．５×０．
５）／（０．６５×０．６５）＝０．４１となる。(Embodiment 1) Next, an embodiment of the present invention will be described with reference to the drawings. FIGS. 1A and 1B show a gray-tone exposure photomask formed by repeating a light-shielding portion 1 and a non-light-shielding portion 2 in an embodiment of the present invention. FIG.
In (a), the size of the light shielding unit 1 is 0.3 μm × 0.3 μm.
The light-shielding portions 1 of the same size are repeated at intervals of the non-light-shielding portions 2 of 0.3 μm. In FIG. 1B, the light shielding unit 1
Is 0.5 μm × 0.5 μm, and light-shielding portions 1 of the same size are repeated at intervals of non-light-shielding portions 2 of 0.15 μm. The light-shielding portion 1 is formed by vapor-depositing chromium similarly to a normal photomask. In FIG. 1A, the area ratio of the non-light-shielding portion per unit area of the portion where the light-shielding portion and the non-light-shielding portion are mixed is (0.6 × 0.6−0.3 ×
0.3) / (0.6 × 0.6) = 0.75, and in FIG. 1B, (0.65 × 0.65-0.5 × 0.
5) / (0.65 × 0.65) = 0.41
【００１０】このグレートーン露光用フォトマスクでは
非遮光部の面積割合が、０．４１〜０．７５となる遮光
部、非遮光部の組み合わせを作った。平均露光量は露光
量に非遮光部の面積割合を乗じて算出した。例えば露光
量２００ｍＪ／ｃｍ2のときの図１（ａ）の平均露光量
は、２００×０．７５＝１５０（ｍＪ／ｃｍ2）とな
る。In this gray-tone exposure photomask, a combination of a light-shielding portion and a non-light-shielding portion in which the area ratio of the non-light-shielding portion is 0.41 to 0.75 was made. The average exposure amount was calculated by multiplying the exposure amount by the area ratio of the non-light-shielding portion. For example Figure 1 the average exposure amount (a) when the exposure amount 200 mJ / cm 2 becomes 200 × 0.75 = 150 (mJ / cm 2).
【００１１】次に感光性樹脂の膜厚と露光量の関係を求
めた。これは感光性樹脂の塗布膜厚によりそれぞれ作成
する必要がある。ここでは感光性樹脂の塗布膜厚が２．
１４μｍの時で、作成条件のみを記述する（従来からの
手法のため図示せず）。Next, the relationship between the thickness of the photosensitive resin and the amount of exposure was determined. It is necessary to make this according to the applied film thickness of the photosensitive resin. Here, the coating thickness of the photosensitive resin is 2.
At 14 μm, only the preparation conditions are described (not shown because of the conventional method).
【００１２】ガラス基板に感光性樹脂（ポジ型、粘度１
９ｃＰ）を２０００ｒｐｍで塗布後、ホットプレートで
９０℃、１分のプリベークを行い、適当なフォトマスク
を用いて露光量を０〜２００ｍＪ／ｃｍ2まで変えた試
料をそれぞれ作成した。その後、ホットプレートで１１
０℃、１分の露光後ベーキングを行い、１分の静止現像
後１３０℃、１分のポストベークを行った。このように
して作成した露光量毎試料の感光性樹脂の膜厚を段差計
で計測した。この結果が図２の露光量−膜厚特性曲線で
ある。露光不足にならないためには、１７０ｍＪ／ｃｍ
2以上の露光量が必要であるが、過大な露光量であると
ポジ型ではパターンの細りが見られる。パターン寸法の
点から２００ｍＪ／ｃｍ2が適正露光量であった。Photosensitive resin (positive type, viscosity 1)
After applying 9 cP) at 2000 rpm, prebaking was performed on a hot plate at 90 ° C. for 1 minute, and samples with different exposure amounts from 0 to 200 mJ / cm 2 were prepared using an appropriate photomask. Then, on a hot plate 11
After exposure at 0 ° C. for 1 minute, baking was performed. After 1 minute of static development, post baking was performed at 130 ° C. for 1 minute. The film thickness of the photosensitive resin of the sample thus prepared for each exposure amount was measured with a step gauge. The result is the exposure-thickness characteristic curve of FIG. 170mJ / cm
An exposure amount of 2 or more is necessary, but if the exposure amount is excessive, the pattern becomes thinner in the positive type. From the point of the pattern size, 200 mJ / cm 2 was the appropriate exposure.
【００１３】また別のガラス基板に露光時の露光量は２
００ｍＪ／ｃｍ2で図１のフォトマスクを使用した以外
は全く同様の条件で試料を作成した。図１のフォトマス
クの遮光部、非遮光部が混在している部分の露光量は上
述した平均露光量で計算し、それぞれの平均露光量に対
応する領域の感光性樹脂の膜厚を段差計で計測した。こ
の結果が図２の遮光・非遮光部面積割合に基づく平均露
光量―膜厚である。The exposure amount when exposing another glass substrate is 2
A sample was prepared under exactly the same conditions except that the photomask of FIG. 1 was used at 00 mJ / cm 2 . The exposure amount of the portion where the light-shielding portion and the non-light-shielding portion are mixed in the photomask of FIG. 1 is calculated by the above-mentioned average exposure amount, and the film thickness of the photosensitive resin in the region corresponding to each average exposure amount is measured by a step gauge. Was measured. The result is the average exposure amount-film thickness based on the light-shielding / non-light-shielding area ratio in FIG.
【００１４】図２からわかるように、露光量−膜厚特性
曲線と遮光・非遮光部面積割合に基づく平均露光量―膜
厚曲線はほぼ一致している。グレートーン露光で必要な
感光性樹脂膜厚が決まれば、露光量−膜厚特性曲線より
露光量が決定され、その露光量と同じ値の平均露光量を
与える遮光、非遮光部の面積割合が求められる。As can be seen from FIG. 2, the exposure-thickness characteristic curve and the average exposure-thickness curve based on the area ratio of the light-shielding / non-light-shielding portion substantially match. When the thickness of the photosensitive resin film required for the gray-tone exposure is determined, the exposure amount is determined from the exposure amount-thickness characteristic curve, and the area ratio of the light-shielding and non-light-shielding portions that gives the same average exposure amount as the exposure amount is determined. Desired.
【００１５】露光機として投影露光機（開口数ＮＡ＝
０．１６）を使用し、露光波長λとしてλ＝４０５ｎｍ
が中心のもので露光した。感光性樹脂の膜厚、ベークの
作成条件は上述の条件と全く同じである。フォトマスク
として図１（ｂ）と非遮光部の大きさは０．１５μｍで
遮光部の大きさが０．８、１．０、１．２、１．５μｍ
としたものを用意し、２００ｍＪ／ｃｍ2の露光量で露
光した。そして、各条件での感光性樹脂膜厚を段差計で
１５０μｍ幅測定し、その範囲での平均膜厚と３σ値を
算出した。As an exposure device, a projection exposure device (numerical aperture NA =
0.16) and λ = 405 nm as the exposure wavelength λ
Was exposed at the center. The photosensitive resin film thickness and baking conditions are exactly the same as those described above. As shown in FIG. 1B, the size of the non-light-shielding portion is 0.15 μm and the size of the light-shielding portion is 0.8, 1.0, 1.2, and 1.5 μm.
Was prepared and exposed at an exposure of 200 mJ / cm 2 . Then, the thickness of the photosensitive resin film under each condition was measured by a 150 μm width using a step gauge, and the average film thickness and 3σ value in that range were calculated.
【００１６】図３は遮光部大きさと３σ／平均膜厚の関
係を示したものである。感光性樹脂の膜厚平坦性は±３
％以内必要であるから、遮光部大きさは０．５μｍ以内
にする必要がある。FIG. 3 shows the relationship between the size of the light shielding portion and 3σ / average film thickness. ± 3 thickness flatness of photosensitive resin
%, The size of the light shielding portion needs to be within 0.5 μm.
【００１７】同様に非遮光部の大きさの影響をみるため
に、フォトマスクとして図１（ｂ）と遮光部大きさは
０．５μｍで非遮光部の大きさが０．５、０．８、１．
０μｍにして３σ／平均膜厚と非遮光部の大きさとの関
係を示したものが図４である。やはり０．５μｍ以内に
する必要がある。Similarly, in order to see the influence of the size of the non-light-shielding portion, the size of the light-shielding portion is 0.5 μm and the size of the non-light-shielding portion is 0.5, 0.8 as shown in FIG. 1.
FIG. 4 shows the relationship between 3σ / average film thickness and the size of the non-light-shielding portion at 0 μm. Again, it must be within 0.5 μm.
【００１８】投影露光機の解像寸法ｄは、開口数ＮＡ、
露光波長λのとき、ｄ＝λ／ＮＡとなるので、この場合
はｄ＝０．４０５／０．１６＝２．５（μｍ）となる。
従って、０．５（ｕｍ）＝ｄ／５となる。The resolution dimension d of the projection exposure machine is:
Since d = λ / NA at the exposure wavelength λ, d = 0.405 / 0.16 = 2.5 (μm) in this case.
Therefore, 0.5 (um) = d / 5.
【００１９】露光機として密着露光機（フォトマスクと
基板間距離ｇ＝８μｍ）を使用し、露光波長λとしてλ
＝４０５ｎｍが中心のもので露光した。その他は上述の
条件と全く同じである。図５は遮光部大きさと３σ／平
均膜厚、図６は非遮光部大きさと３σ／平均膜厚の関係
を示したものである。遮光部、非遮光部ともその大きさ
は０．５μｍ以内にする必要がある。A contact exposure apparatus (distance g = 8 μm between the photomask and the substrate) was used as an exposure apparatus, and the exposure wavelength λ was λ.
= 405 nm at the center and exposed. The other conditions are exactly the same as those described above. FIG. 5 shows the relationship between the size of the light-shielding portion and 3σ / average film thickness, and FIG. 6 shows the relationship between the size of the non-light-shielding portion and 3σ / average film thickness. The size of both the light-shielding portion and the non-light-shielding portion must be within 0.5 μm.
【００２０】密着露光機の解像寸法ｄは、ｄ＝（２λ
ｇ）0.5となるので、この場合はｄ＝（２×０．４０５
×８）0.5＝２．５（μｍ）であるから、０．５ｕｍ
は、同様に、０．５（ｕｍ）＝ｄ／５となる。The resolution dimension d of the contact exposure machine is d = (2λ
g) 0.5 , so in this case d = (2 × 0.405)
× 8) Since 0.5 = 2.5 (μm), 0.5 μm
Is similarly 0.5 (um) = d / 5.
【００２１】（実施の形態２）図７は本発明の露光用フ
ォトマスクの他の実施例である。上下左右に隣接する遮
光部を、遮光部の大きさ以内でずらしたパターンとして
いる。ずらすことにより、端面の露光量分布の均一性が
とれ、端面までより膜厚が均一となった。(Embodiment 2) FIG. 7 shows another embodiment of the photomask for exposure of the present invention. The light-shielding portions adjacent to the upper, lower, left, and right are formed in a pattern shifted within the size of the light-shielding portion. By shifting, the uniformity of the exposure distribution on the end face was obtained, and the film thickness became more uniform up to the end face.
【００２２】なお、実施の形態では全てポジ型の感光性
樹脂を例に説明したが、ネガ型感光性樹脂を使用した場
合のフォトマスクはポジ型の遮光部と非遮光部が逆にな
るだけである。In the above embodiments, the positive type photosensitive resin is used as an example. However, when a negative type photosensitive resin is used, the photomask in which the positive type light-shielding portion and the non-light-shielding portion are reversed is used. It is.
【００２３】[0023]
【発明の効果】以上のように本発明によれば、グレート
ーン露光での感光性樹脂の膜厚を決定するに際し、遮光
部、非遮光部のパターンを様々に変えた膜厚決定用のフ
ォトマスクを製作する必要がなくなる。また、感光性樹
脂膜厚の平坦性も十分となり、グレートーン露光の信頼
性が向上し、工業上極めて大きな効果を有する。As described above, according to the present invention, when determining the film thickness of the photosensitive resin in the gray-tone exposure, the photo film for determining the film thickness in which the patterns of the light shielding portion and the non-light shielding portion are variously changed. There is no need to make a mask. Further, the flatness of the photosensitive resin film thickness is also sufficient, and the reliability of graytone exposure is improved, which has an extremely large industrial effect.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明の実施の形態の露光用フォトマスクを示
す図FIG. 1 is a diagram showing an exposure photomask according to an embodiment of the present invention.
【図２】露光量と感光性樹脂膜厚の関係を示す図FIG. 2 is a diagram showing a relationship between an exposure amount and a photosensitive resin film thickness.
【図３】投影露光機での遮光部大きさと膜厚平坦性の関
係を示す図FIG. 3 is a diagram showing the relationship between the size of a light-shielding portion and the film thickness flatness in a projection exposure machine.
【図４】投影露光機での非遮光部大きさと膜厚平坦性の
関係を示す図FIG. 4 is a diagram showing the relationship between the size of a non-light-shielding portion and the film thickness flatness in a projection exposure machine.
【図５】密着露光機での遮光部大きさと膜厚平坦性の関
係を示す図FIG. 5 is a diagram showing the relationship between the size of a light-shielding portion and the film thickness flatness in a contact exposure machine.
【図６】密着露光機での非遮光部大きさと膜厚平坦性の
関係を示す図FIG. 6 is a diagram showing the relationship between the size of a non-light-shielding portion and the film thickness flatness in a contact exposure machine.
【図７】本発明の他の実施の形態の露光用フォトマスク
を示す図FIG. 7 is a diagram showing an exposure photomask according to another embodiment of the present invention.
【図８】従来のパターニング工程のフロー図FIG. 8 is a flowchart of a conventional patterning process.
【図９】グレートーン露光の原理を説明する図FIG. 9 illustrates the principle of gray-tone exposure.
１ 遮光部 ２ 非遮光部 1 Shading part 2 Non-shading part
Claims (6)
するようパターニングする際に用いられ、前記感光性樹
脂のパターニングを行う露光機の解像度以下の寸法で形
成された遮光部と非遮光部を繰り返して形成した露光用
フォトマスクであって、前記遮光部と前記非遮光部の面
積割合は、前記面積割合に基づき求められる単位面積当
たりの平均露光量と、前記感光性樹脂の膜厚と露光量の
関係において露光量として前記平均露光量の値を入力し
て得られる前記感光性樹脂の膜厚と、により決定される
ことを特徴とする露光用フォトマスク。1. A light-shielding portion, which is used when patterning a photosensitive resin to have a plurality of film thicknesses by ultraviolet light, and is formed with a size equal to or less than the resolution of an exposing machine for patterning the photosensitive resin, and a non-light-shielding portion. An exposure photomask formed by repeating a portion, wherein an area ratio of the light-shielding portion and the non-light-shielding portion is an average exposure amount per unit area obtained based on the area ratio, and a film thickness of the photosensitive resin. And a film thickness of the photosensitive resin obtained by inputting a value of the average exposure amount as an exposure amount in a relationship between the exposure amount and the exposure amount.
光した際の解像寸法を与えるｄ（ｄ＝λ／ＮＡ）のｄ／
５より小さな寸法で遮光部を作成する請求項１記載の露
光用フォトマスク。2. The d / d of d (d = .lambda. / NA) giving a resolution dimension when exposed at an exposure wavelength .lamda. By a projection exposure machine having a numerical aperture NA.
2. The exposure photomask according to claim 1, wherein the light-shielding portion is formed with a size smaller than 5.
光した際の解像寸法を与えるｄ（ｄ＝λ／ＮＡ）のｄ／
５より小さな寸法で非遮光部を作成する請求項１記載の
露光用フォトマスク。3. The d / d of d (d = .lambda. / NA) giving a resolution dimension when exposed at an exposure wavelength .lamda. By a projection exposure machine having a numerical aperture NA.
2. The exposure photomask according to claim 1, wherein the non-light-shielding portion is formed with a size smaller than 5.
脂の距離がｇの密着露光機で露光波長λで露光した際の
解像寸法を与えるｄ（ｄ＝（２λｇ）0.5）のｄ／５よ
り小さな寸法で遮光部を作成する請求項１記載の露光用
フォトマスク。4. The distance d between the photomask and the photosensitive resin applied to the substrate is d / (d = (2λg) 0.5 ), which gives the resolution dimension when exposed at an exposure wavelength λ with a contact exposure device with g. 2. The exposure photomask according to claim 1, wherein the light-shielding portion is formed with a size smaller than 5.
脂の距離がｇの密着露光機で露光波長λで露光した際の
解像寸法を与えるｄ（ｄ＝（２λｇ）0.5）のｄ／５よ
り小さな寸法で非遮光部を作成する請求項１記載の露光
用フォトマスク。5. The d / d of d (d = (2λg) 0.5 ) which gives a resolution dimension when exposed at an exposure wavelength λ by a contact exposure device in which the distance between the photomask and the photosensitive resin applied to the substrate is g. 2. The exposure photomask according to claim 1, wherein the non-light-shielding portion is formed with a size smaller than 5.
ともｄ／５以内の寸法でずらしてある請求項１記載の露
光用フォトマスク。6. The photomask for exposure according to claim 1, wherein the light-shielding portion adjacent to the light-shielding portion is shifted vertically and horizontally by a dimension within d / 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000286716A JP3518497B2 (en) | 2000-09-21 | 2000-09-21 | Photomask for exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000286716A JP3518497B2 (en) | 2000-09-21 | 2000-09-21 | Photomask for exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002099070A true JP2002099070A (en) | 2002-04-05 |
| JP3518497B2 JP3518497B2 (en) | 2004-04-12 |
Family
ID=18770595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000286716A Expired - Fee Related JP3518497B2 (en) | 2000-09-21 | 2000-09-21 | Photomask for exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3518497B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1589373A1 (en) * | 2003-01-28 | 2005-10-26 | Sony Corporation | Exposing mask and production method therefor and exposing method |
| JP2008046623A (en) * | 2006-07-21 | 2008-02-28 | Dainippon Printing Co Ltd | Gradation mask |
| US7473494B2 (en) | 2003-07-29 | 2009-01-06 | Sony Corporation | Exposure mask and mask pattern production method |
| US7914971B2 (en) | 2005-08-12 | 2011-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Light exposure mask and method for manufacturing semiconductor device using the same |
-
2000
- 2000-09-21 JP JP2000286716A patent/JP3518497B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1589373A1 (en) * | 2003-01-28 | 2005-10-26 | Sony Corporation | Exposing mask and production method therefor and exposing method |
| EP1589373A4 (en) * | 2003-01-28 | 2007-05-16 | Sony Corp | Exposing mask and production method therefor and exposing method |
| US8092960B2 (en) | 2003-01-28 | 2012-01-10 | Sony Corporation | Exposing mask and production method therefor and exposing method |
| US7473494B2 (en) | 2003-07-29 | 2009-01-06 | Sony Corporation | Exposure mask and mask pattern production method |
| US7914971B2 (en) | 2005-08-12 | 2011-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Light exposure mask and method for manufacturing semiconductor device using the same |
| JP2008046623A (en) * | 2006-07-21 | 2008-02-28 | Dainippon Printing Co Ltd | Gradation mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3518497B2 (en) | 2004-04-12 |
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