JP2002094076A5 - - Google Patents
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- JP2002094076A5 JP2002094076A5 JP2001176282A JP2001176282A JP2002094076A5 JP 2002094076 A5 JP2002094076 A5 JP 2002094076A5 JP 2001176282 A JP2001176282 A JP 2001176282A JP 2001176282 A JP2001176282 A JP 2001176282A JP 2002094076 A5 JP2002094076 A5 JP 2002094076A5
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- Japan
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001176282A JP4827324B2 (ja) | 2000-06-12 | 2001-06-11 | 半導体装置の作製方法 |
Applications Claiming Priority (13)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000176173 | 2000-06-12 | ||
| JP2000176188 | 2000-06-12 | ||
| JP2000176188 | 2000-06-12 | ||
| JP2000176173 | 2000-06-12 | ||
| JP2000177641 | 2000-06-13 | ||
| JP2000177652 | 2000-06-13 | ||
| JP2000-176173 | 2000-06-13 | ||
| JP2000177641 | 2000-06-13 | ||
| JP2000-177641 | 2000-06-13 | ||
| JP2000177652 | 2000-06-13 | ||
| JP2000-176188 | 2000-06-13 | ||
| JP2000-177652 | 2000-06-13 | ||
| JP2001176282A JP4827324B2 (ja) | 2000-06-12 | 2001-06-11 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002094076A JP2002094076A (ja) | 2002-03-29 |
| JP2002094076A5 true JP2002094076A5 (ja) | 2008-07-17 |
| JP4827324B2 JP4827324B2 (ja) | 2011-11-30 |
Family
ID=27531579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001176282A Expired - Fee Related JP4827324B2 (ja) | 2000-06-12 | 2001-06-11 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4827324B2 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7029980B2 (en) * | 2003-09-25 | 2006-04-18 | Freescale Semiconductor Inc. | Method of manufacturing SOI template layer |
| KR101132603B1 (ko) * | 2003-09-25 | 2012-04-06 | 프리스케일 세미컨덕터, 인크. | 템플릿 층 형성 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3522381B2 (ja) * | 1995-03-01 | 2004-04-26 | 株式会社半導体エネルギー研究所 | 薄膜半導体デバイス及び薄膜半導体デバイスの作製方法 |
| JP3468967B2 (ja) * | 1996-01-23 | 2003-11-25 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法及びそれを用いた薄膜トランジスタ |
| JP3910229B2 (ja) * | 1996-01-26 | 2007-04-25 | 株式会社半導体エネルギー研究所 | 半導体薄膜の作製方法 |
| JP3830623B2 (ja) * | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
| JP4601731B2 (ja) * | 1997-08-26 | 2010-12-22 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置を有する電子機器及び半導体装置の作製方法 |
| JP4376331B2 (ja) * | 1998-08-07 | 2009-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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2001
- 2001-06-11 JP JP2001176282A patent/JP4827324B2/ja not_active Expired - Fee Related