JP2002084782A - Power window driving controller - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a power window driving controller which has a simple constitution, can be manufactured inexpensively, and can quickly detect pinched foreign matters with high accuracy. SOLUTION: When foreign matters are pinched, a switching device 110 limits a load current, namely, the torque of a PW motor 102 by repetitively turning on/off a main control FETQA by means of a driving circuit 111. When the difference between the drain-source voltage of the main control FETQA and a first reference voltage (VDSB) exceeds a first prescribed value set by means of a diode clamp circuit, and the output of a comparator CMP1 becomes a low level, the circuit 111 turns off the main control FETQA. When the drain- source voltage of the FETQA increases and the output of the comparator CMP1 becomes a high level, the circuit 111 turns on the FETQA.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a power window drive control device for moving a window glass of a vehicle or the like up and down by a driving force of a motor. At cost,
High-precision and high-speed foreign object entrapment detection can be performed.
In addition, the present invention relates to a power window drive control device capable of eliminating adjustment work.

[0002]

2. Description of the Related Art As a conventional power window drive control device, for example, there is one shown in FIG. The power window drive control device of this conventional example detects the entrapment of a foreign object by detecting the rotation speed of the motor with a pulse sensor, and stops or reverses the drive of the motor.

[0003] In FIG. 4, a power window drive control device of the prior art includes a motor unit 501, a motor drive control unit 502, and an auto (automatic) switch 50.
3 and a manual (manual) switch 504. Here, the motor unit 501 includes a motor 511 that moves the window glass up and down, a pulse sensor 512 that generates a pulse corresponding to the number of rotations of the motor 511 to detect the rotation speed of the motor 511, and a pulse sensor 5.
12 is provided with a limit switch 513 for setting a dead zone.

[0004] The motor drive control unit 502 includes:
The control microcomputer 523 transmits operation instructions from the power supply circuit 521, the auto switch 503, the manual switch 504, and the like.
Interface unit 522 for transmitting a detection signal from the pulse sensor 512 to the control microcomputer 523, and a driving instruction for the motor 511 to the drive circuit 524 based on the operation instruction and the detection signal from the pulse sensor 512. Control microcomputer 523 to be provided, a relay switch unit 525 having a relay contact, and a relay switch unit 5 based on a driving instruction from the control microcomputer 523.
A drive circuit 524 that opens and closes 25 relay contacts and controls the rotation direction and speed of the motor 511 is provided.

In the auto switch 503, when the up-side contact or the down-side contact is turned on, the drive of the motor 511 is continued even if the user releases his / her hand, and the window glass moves until it is fully closed or fully opened. For example, when moving this window glass from the fully open state to the fully closed state, when the window glass is in the fully closed state,
Such movement is prevented by a window frame or the like, and the motor 511 is moved.
Rotation speed fluctuates. The amount of change in the rotation speed of the motor 511 is detected via the pulse sensor 512. When the change exceeds a predetermined value, it is determined that the movement of the window glass has been completed, and the motor 511 is stopped. On the other hand, manual switch 5
Reference numeral 04 is for manually operating the vertical movement of the window glass. That is, the occupant moves the switch in the desired direction (up /
By turning on the “down” side, the window glass is moved in the direction in which it was
The windowpane can be stopped at a predetermined position.

In such a conventional power window drive control device, detection of a state in which a foreign object is caught during the auto-up operation, that is, detection of the caught object is performed as follows. That is, the control microcomputer 523 detects both rising and falling edges of the detection pulse from the pulse sensor 512, calculates the rotation speed of the motor 511 when the power window rises, and detects pinching by a change in the rotation speed. . More specifically, when the rate of change of the rotation speed of motor 511 in the decreasing direction falls below a predetermined threshold value while the power window is rising, it is determined that a foreign object has been caught. Also, when the rotation speed of the motor 511 falls below a preset threshold value while the power window is rising, it is determined that a foreign object has already been trapped. Note that the detection range of such entrapment detection is the operation range of the windowpane, but from the start of window rising to the input of 20 pulses, the detection range is set as a dead zone to absorb fluctuations in operation speed, In addition, the limit switch 513 is turned off even during the period from the fully closed state to the opened state of 4 [mm] of the window glass, so that the dead zone is set.

[0007]

However, in the above-described conventional power window drive control device, the pulse sensor 512 generally generates one pulse per one rotation of the motor 511 in order to reduce the cost. There is a problem that the accuracy of speed detection is low because a low resolution device is used. Also, in order to keep the reversal load after foreign object entrapment detected, the threshold value in entrapment determination is determined by setting the power supply voltage fluctuation, the ambient temperature fluctuation, the motor characteristic fluctuation, and the door standing fluctuation (initial, aging). ), It is necessary to correct various items such as the influence of wind pressure during high-speed running, the backlash of the window when running on rough roads, the wiring resistance of the harness, and the like, and there are circumstances in which the number of adjustment work is large.

Further, in order to prevent malfunction due to noise or threshold variation, a plurality of pulse sensors are provided, or a method of making an accurate determination by fine-grained processing has been proposed. If the judgment is delayed, there is a situation that a foreign substance is caught by a torque higher than a specified value, which is dangerous. Further, it is necessary to include the control microcomputer 523, the pulse sensor 512, the drive circuit 524, the correction circuit, and the like, the number of parts is large, the system configuration is complicated, and it is difficult to reduce the system scale and the apparatus cost. There were circumstances.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional circumstances, and to simplify the apparatus configuration by eliminating the need for a sensor or the like, and to detect a foreign object at high speed at low cost with high accuracy. It is an object of the present invention to provide a power window drive control device which can perform the adjustment work and can also eliminate the adjustment work.

[0010]

In order to solve the above-mentioned object, a power window drive control device of the present invention is a power window drive control device that includes a motor and that opens and closes a window glass by a driving force of the motor. A switching device that controls switching according to a control signal supplied to a control signal input terminal and controls a power supply from a power supply to the motor; a semiconductor switch that is connected in parallel to the semiconductor switch and the motor; A circuit in which a second semiconductor switch and a second load to be switched are connected in series; and a reference having a voltage characteristic substantially equivalent to a voltage characteristic of a terminal voltage of the semiconductor switch. Reference voltage generation means for generating a voltage; and detection for detecting a difference between a voltage between terminals of the semiconductor switch and the reference voltage. Those comprising the stage, and control means for ON / OFF controlling the semiconductor switches in accordance with the difference between the voltage and the reference voltage between the detected terminal.

According to a second aspect of the present invention, in the power window drive control device according to the first aspect, the power window drive control device is based on a control signal for turning on / off the semiconductor switch or a voltage of the motor. ,
An abnormality in the opening / closing movement of the motor or the window glass is determined.

According to a third aspect of the present invention, there is provided a power window drive control device according to the first or second aspect, further comprising an operation switch for instructing automatic opening or closing movement of the window glass automatically or manually. Switching means for switching and setting the resistance value of the second load according to the instruction content of the operation switch.

According to a fourth aspect of the present invention, in the power window drive control device according to the first, second or third aspect, the semiconductor switch and the second semiconductor switch are turned on from an off state. It has equivalent characteristics with respect to the transient voltage characteristics of the voltage between terminals when transitioning to.

According to a fifth aspect of the present invention, there is provided a power window drive control device according to any one of the first to third aspects, wherein the current capacity of the second semiconductor switch is equal to the current capacity of the semiconductor switch. The resistance ratio between the motor and the second load is set to be as inversely proportional as possible to the current capacity ratio between the semiconductor switch and the second semiconductor switch.

Here, the semiconductor switch and the second semiconductor switch include a field effect transistor (FET: Fiel
d-Effect Transistor) or static induction transistor (S
IT: Static Inducted Transistor) or MOS compound devices such as emitter switched thyristor (EST), MOS controlled thyristor (MCT) and IGBT
(Insulated Gate Bipolar Transistor) and other switching elements such as insulated gate power devices. These switching elements are n-channel type,
Any p-channel type may be used.

In the power window drive control device according to the first, second, third, fourth, and fifth aspects of the present invention, when the power supply from the power supply to the motor is controlled by the semiconductor switch, the reference voltage generating means uses the reference voltage generation means. (2) generating a voltage between the terminals of the semiconductor switch as a reference voltage having a voltage characteristic substantially equivalent to the voltage characteristic of the voltage between the terminals of the semiconductor switch, detecting a difference between the voltage between the terminals of the semiconductor switch and the reference voltage by a detecting means; The control means controls on / off of the semiconductor switch according to the difference between the detected inter-terminal voltage and the reference voltage.

When an FET is used as a semiconductor switch, for example, the voltage between the terminals (drain-source voltage) of the FET which forms a part of the power supply path changes from the off state to the on state (for example, n-channel). In the case of the type FET, the voltage characteristics change according to the state of the power supply path and the motor, that is, the wiring inductance of the path and the time constant based on the wiring resistance and the short-circuit resistance. The present invention utilizes a transient voltage characteristic of a semiconductor switch when transitioning from an off state to an on state in such a semiconductor switch, and uses a voltage between terminals of the semiconductor switch and a reference voltage generated by reference voltage generation means. (Normal state), the terminal voltage of the semiconductor switch forming a part of the power supply path (ie,
This is to determine the degree to which the current of the power supply path deviates from the normal state.

For example, when a window glass gets foreign matter in between, the load current suddenly increases because the number of revolutions of the motor decreases and the back electromotive force decreases, and the voltage across the terminals of the semiconductor switch also changes rapidly. In this case, the control means detects that the window glass has caught a foreign substance when the difference between the voltage between the terminals of the semiconductor switch and the reference voltage exceeds the first predetermined value, and controls the semiconductor switch to turn off. The voltage between the terminals of the semiconductor switch increases due to the OFF control, and the value thereof becomes the second value.
When the semiconductor switch is turned on when it exceeds a predetermined value, the on / off control of the semiconductor switch is repeatedly performed to limit the load current, that is, the motor torque.

Further, even when the armature back electromotive force of the motor is reduced and the rotation speed of the motor is reduced, and the motor is locked, the semiconductor switch is turned on / off to flow through the motor. The range of the current is limited, and the motor torque is limited.

That is, in the present invention, the load current is directly detected to detect the entrapment in comparison with the conventional pulse type in which the entrapment is detected based on the rotational speed or the rate of change of the rotational speed. The torque can be directly detected, and the detection accuracy can be increased.

After the jamming is detected, the semiconductor switch is turned on / off to limit the load current, thereby controlling the torque of the motor. When the load becomes normal during the OFF control, the normal operation can be restored. This allows
There is no need to set the judgment load high because of fear of malfunction, and the judgment load can be set low. As a result, highly accurate detection becomes possible.

Furthermore, unlike the related art, since a sensor and the like are not required and the configuration is simple, the system scale of the power window drive control device can be reduced, and the cost can be reduced. Further, conventionally, it is necessary to correct the entrapment determination threshold value, and the man-hour for the adjustment work has been a problem, but this can be eliminated.

In the power window drive control device according to the second aspect of the present invention, the abnormality of the open / close movement of the motor or the window glass is determined based on the control signal for turning on / off the semiconductor switch or the voltage of the motor. Is desirable. For example, the degree of change in the voltage between the terminals of the semiconductor switch differs between when the window glass sandwiches a foreign substance and when the motor reaches the locked state, so that the repetition cycle of the on / off control of the semiconductor switch is different. That is, since the change in the voltage between the terminals of the semiconductor switch is larger when locking occurs than when pinching occurs, the repetition cycle of the on / off control of the semiconductor switch is shorter. From such a circuit characteristic, it is possible to determine what abnormality has occurred on the motor side by looking at a control signal for controlling ON / OFF of the semiconductor switch or a change in the voltage of the motor.

Further, in the power window drive control device according to the third aspect, the resistance of the second load is changed by the switching means in accordance with the contents of the operation switch for instructing the opening and closing movement of the window glass to be performed automatically or manually. It is desirable to set the value by switching. As described above, the change in the voltage between the terminals of the semiconductor switch is larger when locking occurs than when pinching occurs, and when the window glass pinches foreign matter, the window glass automatically closes and moves. Since it occurs only when the window glass is automatically closed and moved, and by setting the resistance value of the second load to be switched between other times, pinch or lock abnormality detection can be performed more accurately. Becomes possible. More specifically, since the change in the voltage between the terminals of the semiconductor switch is larger when locking occurs than when pinching occurs, the resistance of the second load for pinching detection is equal to the resistance of the second load for locking detection. It will be set to a value larger than the value.

[0025]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a power window drive control device according to the present invention will be described below in detail with reference to FIGS. Here, FIG. 1 is a configuration diagram of a power window drive control device according to an embodiment of the present invention, FIG. 2 is a configuration diagram of a switching device used in the power window drive control device of the embodiment, and FIG. FIG. 3 is an explanatory diagram illustrating a voltage waveform of a motor.

[Switching Device Used in the Embodiment] Before giving a detailed description of the embodiment, first, a switching device (hereinafter referred to as YAFET) used in the power window drive control device of the embodiment will be described with reference to FIG. I will explain. YASFET is power supply 1
01 on the path for supplying the output voltage VB to the load 102, the drain D- of the main control FET QA as a semiconductor switch.
A source SA is connected in series to control power supply by switching control of the main control FET QA. A drive unit, a protection unit, a load current detection unit and the like are combined with the main control FET QA and integrated on one chip 110. Integrated circuit.

In FIG. 2, a IASFET 110 includes a charge pump 305 as a driving means of the main control FET QA.
And a drive circuit 111. Drive circuit 111
Includes a source transistor having a collector connected to the output of the charge pump 305 and a sink transistor having an emitter connected to the ground potential, which are connected in series. Based on a switching signal by turning on / off the switch SW1, these sources are connected to each other. A signal for driving and controlling the main control FET QA is output by turning on / off the transistor and the sink transistor. When the output voltage VB of the power supply 101 is, for example, 12 [V], the charge pump 305
Is, for example, VB + 10 [V].

Next, as a protection means for the main control FET QA, the YSFET 110 is provided with an overheat cutoff protection circuit 306. The overheat cutoff protection circuit 306 realizes an overheat cutoff protection function that is also added to a general FET with a built-in temperature sensor, and detects that the temperature of the main control FET QA has risen to a specified temperature or more by the built-in temperature sensor. In this case, the detection information to that effect is held in the latch circuit, and the overheat cutoff FET connected between the gate TG and the source SA of the main control FET QA is turned on, so that the main control FET QA is turned on. It is forcibly turned off. The information held by the latch circuit is output via the terminal T14 and can be used as diagnosis (diagnosis) information.

Next, as a load current detecting means of the main control FET QA, the YAFET 110 has an overcurrent detecting function and an undercurrent detecting function. First, the overcurrent detection function
Specifically, the first reference FET QB and the resistors R1 to R1
This is realized by R9, Rr1, diodes D1 to D3, and comparator CMP1. That is, the first reference FET QB and the resistor Rr1 are means for generating a first reference voltage in overcurrent detection, and the source (SB) potential of the first reference FET QB is connected to the "-" input terminal of the comparator CMP1 via the resistor R6. Is supplied to The source (SA) potential of the main control FET QA is supplied to the “+” input terminal of the comparator CMP1 via the resistor R5.

The potential at the "+" input terminal and the potential at the "-" input terminal of the comparator CMP1 are respectively applied to the potentials VC and VE (strictly speaking, the potentials VC and VE) by the resistors R1 to R3 and the diode clamp circuits formed by the diodes D2 and D3. VE (potential obtained by subtracting the forward potential of each diode from VE). The resistor R9 and the diode D1 connected to the "+" input terminal of the comparator CMP1 are circuits for providing the comparator CMP1 with hysteresis.

That is, the overcurrent detection function is performed by the main control FET.
A first reference voltage having a voltage characteristic substantially equivalent to the voltage VDSA between the drain D and the source S of the QA is set to a first reference FET QB on the same chip 110 and a resistor Rr outside the chip 110
1 in the comparator CMP1.
This is realized by detecting a difference between the first reference voltage and the voltage VDSA between the drain D and the source S of the main control FET QA.

Therefore, when a complete short circuit (dead short circuit) occurs on the load 102 side, the comparator CMP
1 becomes “L” level, and the drive circuit 111 controls the main control FET QA to be turned off. When a complete short circuit (dead short circuit) occurs, the main control FE
When the TQA transitions from the off state to the on state, or when an incomplete short circuit (rare short) having a certain degree of short resistance occurs, the on / off control of the main control FET QA is repeatedly performed to periodically generate heat. Main control FET QA by action
Is overheated and the main control FET Q
A is designed to accelerate the overheating cutoff.

Here, the setting of the first reference voltage, that is, the resistance R
The setting of r1 is performed as follows. That is, since the main control FET QA is usually configured by connecting n FETs (having the same characteristics as the first reference FET QB) in parallel, the resistance Rr1 is set to (the resistance value of the load 102 × n).
However, it is desirable to set the resistance value of the load 102 to a value about the short-circuit resistance at the time of incomplete short-circuit (rare short). In FIG. 3, the comparator CMP1
Is supplied only to the drive circuit 111, but it can be used for other control by outputting it to the outside via a terminal.

Next, the undercurrent detection function, specifically,
This is realized by the second reference FET QC, the resistor Rr2, and the comparator CMP2. That is, the second reference FET QC and the resistor Rr2 are means for generating a second reference voltage in detecting an undercurrent, and the source (SC) potential of the second reference FET QC is supplied to the "-" input terminal of the comparator CMP2. .
The “+” input terminal of the comparator CMP2 is supplied with the source (SA) potential of the main control FET QA.

That is, the undercurrent detection function is performed by the main control FE.
A second reference voltage having a voltage characteristic substantially equivalent to the voltage VDSA between the drain D and the source SA of the TQA is generated by the second reference FET QC on the same chip 110 and the resistor Rr2 outside the chip 110, and the second reference voltage is generated by the comparator CMP2. 2 Reference voltage and drain D- of main control FET QA
This is realized by detecting a difference from the source-S voltage VDSA.

Therefore, when a disconnection failure or the like occurs on the load 102 side, the output of the comparator CMP2 becomes valid (“L” level) and is output to the outside of the chip 110 via the terminal T15. Here, the setting of the second reference voltage, that is, the setting of the resistor Rr2 is performed as follows. As with the first reference voltage (resistance Rr1), the resistance R
Although r2 may be set to (the resistance value of the load 102 × n), it is desirable to set the resistance value of the load 102 to a value about the load resistance at the time of the disconnection failure.

In addition to the driving means, the protection means and the load current detecting means described above, the power supply enable circuit 302, the rush current mask circuit 303 for avoiding the overcurrent judgment by the rush current, the integration of the number of ON / OFF times ON / OFF count integrating circuit 30 that performs cutoff control by means of
4 is also described, but is not directly related to the present invention, and therefore the description is omitted.

Finally, the characteristics of the YAFET 110 can be summarized as follows. First, the shunt resistor for current detection is not required, and power consumption in the power supply path can be suppressed, which is advantageous for a large current circuit. Third, the sensitivity is high and the current detection accuracy is high.
The ETQA can be turned on / off, and the overheat cutoff function and the on / off number integration circuit 304 can perform high-speed processing as compared with program processing of a microcomputer or the like.
In addition, the circuit configuration can be reduced in size by one chip, the mounting space can be reduced, and the device cost can be reduced. Fifth, the current detection is performed by the drain of the main control FET QA.
Since the detection is performed by detecting the difference between the source-to-source voltage VDSA and the first reference voltage and the second reference voltage, the first reference FET QB and the second reference FE are mounted on the same chip.
By forming the TQC and the main control FET QA,
The common mode error factor in current detection, that is, the influence of power supply voltage, temperature drift, and variation between lots can be eliminated.

[Embodiment] Next, a power window drive control device according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a configuration diagram of the power window drive control device of the embodiment. The power window drive control device of the present embodiment includes a PW motor 102, and opens and closes a window glass by the driving force of the PW motor 102.

In FIG. 1, the power window drive control device of the present embodiment includes an auto (automatic) switch 203 and a manual (manual) switch 204 corresponding to the operation switches described in the claims, an operation instruction and a switching device ( Signal 255 from YASFET 110
Switching device (YASFET) 110 based on
A control microcomputer 223 for giving a drive instruction of the PW motor 102 to the drive circuit 111 therein, an operation interface unit 522 for transmitting operation instructions from the auto switch 203 and the manual switch 204 to the control microcomputer 523,
And a switching device (YASFET) 110.

Here, the switching device (YASF)
ET) 110 has the configuration described above (see FIG. 2),
The power supply voltage VB is supplied to the terminal T1, the control signal 251 from the control microcomputer 223 is supplied to the terminal T2, and the PW motor 102 is connected to the terminal T3 as a load. In addition, a resistor Rr connected in series for setting a first reference voltage in the overcurrent detection function is connected to a terminal T17.
11 and Rr12 are connected. The collector of the transistor TR1 that is turned on / off by the signal 253 from the control microcomputer 223 supplied to the gate is connected to the connection point of the resistors Rr11 and Rr12. Further, a resistor Rr2 for setting a second reference voltage in the undercurrent detection function is connected to the terminal T16.

In this embodiment, the semiconductor switch described in the claims is the main control FET QA, the second semiconductor switch is the first reference FET QB, the second load is the resistors Rr11 and Rr12, and the detecting means is the comparator CMP1. However, the control unit corresponds to the drive circuit 111, and the switching unit corresponds to the transistor TR1.

Next, while explaining the function of each component,
The operation of the power window drive control device of the present embodiment will be described. First, as in the conventional example, when the up switch or the down switch is turned on, the operation switch of the PW motor 1 is turned on even if the hand is released.
02 is continued, and the window glass moves until it is fully closed or fully opened. On the other hand, the manual switch 204 is for manually operating the vertical movement of the window glass. That is,
When the occupant turns on the switch in a desired direction (up / down), the windowpane is moved in the ON direction in the ON time, and the windowpane can be stopped at a predetermined position.

Next, in FIG. 2, the basic operation of the switching device (YASFET) 110 is PW
The supply of the power supply voltage VB to the motor 102 is controlled by the main control FET Q
When switching control is performed by A, the drain-source voltage VDSB of the first reference FET QB is generated as a first reference voltage having a voltage characteristic substantially equivalent to the voltage characteristic of the drain-source voltage VDSA of the main control FET QA. Drain-source voltage VDSA of control FET QA
The difference between the first reference voltage (VDSB) and the comparator CMP
1 and the drive circuit 111 controls on / off of the main control FET QA according to the comparison result of the comparator CMP1.

When the window glass pinches a foreign object and the pinch occurs, the rotation speed of the PW motor 102 decreases and P
Since the back electromotive force of the W motor 102 decreases, the load current rapidly increases, and the drain-source voltage VDSA of the main control FET QA also changes rapidly. In this case, in the comparator CMP1, the main control FET QA
Drain-source voltage VDSA and the first reference voltage (VDS
When the difference from B) exceeds a first predetermined value set by the diode clamp circuit, the output of the comparator CMP1 becomes “L” level, and the drive circuit 111 controls the main control FET QA to be turned off. Thereafter, when the voltage VDSA between the drain and the source of the main control FET QA increases due to the off control and the value exceeds a second predetermined value set by the diode clamp circuit, the comparator CMP
1 becomes the "H" level, and the main control FET QA is turned on / off by the drive circuit 111. In this manner, the on / off control of the main control FET QA is repeatedly performed to reduce the load current, that is, the torque of the PW motor 102. I try to limit it.

Further, even when the armature back electromotive force of the PW motor 102 decreases and the rotation speed of the PW motor 102 decreases, and the PW motor 102 is locked, the main control FET QA is turned on / off. By controlling the PW motor 102
Is limited to limit the torque of the PW motor 102.

In the power window drive control device of the present embodiment, the load current is directly detected, as compared with the conventional example (pulse method) in which the entrapment is detected based on the rotation speed or the change rate of the rotation speed. As a result, the torque of the PW motor 102 can be directly detected, and the detection accuracy can be increased.

After the entrapment is detected, the main control FET Q
A is turned on / off to limit the load current.
The torque control of the PW motor 102 can be performed, and even after the trapping is once detected, the normal operation can be resumed when the load becomes normal during the on / off control. As a result, it is not necessary to set the determination load high because of fear of malfunction, and the determination load can be set low, and as a result, highly accurate detection can be performed.

Further, unlike the conventional example, since a sensor and the like are not required and the configuration is simple, the system scale of the power window drive control device can be reduced, and
It can be realized at low cost. Further, conventionally, it is necessary to correct the entrapment determination threshold value, and the man-hour for the adjustment work has been a problem, but this can be eliminated.

In the power window drive control device of the present embodiment, the resistances connected to the terminal T17 by the on / off control of the transistor TR1 are changed to Rr11 and Rr1.
By switching to 1 and Rr12, the setting of the first reference voltage can be switched and set.

When the entrapment of a foreign object occurs and when the PW motor 102 reaches the locked state, the main control FET Q
The degree of change of the drain-source voltage VDSA of A is different, and the change of the drain-source voltage VDSA of the main control FET QA is larger when locking occurs than when pinching occurs. Further, the foreign substance is trapped only when the auto switch 203 is on and the manual switch 204 is on to the up side, that is, only when the window glass is automatically closed (at the time of auto-up). . Therefore, by setting the resistance value of the second load to be switched between the time of auto-up and the other time (down and manual up), it is possible to more accurately detect pinch or motor lock abnormality. Become.

In the present embodiment, at the time of auto-up or at other times (down and manual up)
Is determined by the control microcomputer 223, and at the time of auto-up, the signal 253 is set to the “H” level to turn on the transistor TR1, and the resistance value of the second load for pinch detection is a series combined resistance of Rr11 and Rr12. Value,
At other times (down and manual up), the signal 253 is set to “L” level and the transistor TR
1 is turned off, and the resistance value of the second load for detecting lock occurrence is set to the resistance value of Rr11.

Further, in the power window drive control device of this embodiment, as described above, when pinch or motor lock abnormality occurs, the main control FET QA is turned on / off to reduce the current flowing through the PW motor 102. And the torque of the PW motor 102 is limited.
The load voltage (VL) of the W motor 102 is taken into the control microcomputer 223 via a signal 255, and the PW motor 1
Based on the load voltage (VL) of No. 02, it is possible to determine whether the pinch or the motor lock has occurred. The control microcomputer 223 determines
For example, when the motor lock occurs, the driving of the PW motor 102 can be forcibly stopped via the control signal 251.

The degree of change in the drain-source voltage VDSA of the main control FET QA differs between the time of occurrence of a foreign substance jam and the time of motor lock.
Have different on / off control repetition periods. That is, as shown in FIGS. 3A and 3B, when pinching occurs (FIG.
The repetition cycle of the ON / OFF control of the main control FET QA is shorter when lock occurs (see FIG. 3A) than when lock occurs (see FIG. 3B). Therefore, the PW motor 10
By diagnosing the signal waveform of the load voltage (VL) of No. 2, it is possible to determine what kind of abnormality has occurred on the PW motor 102 side. Note that, instead of the load voltage (VL) of the PW motor 102, an output signal of the drive circuit 111 for turning on / off the main control FET QA may be extracted from the switching device 110 and diagnosed.

It is desirable to set the resistance values of the resistors Rr11 and Rr12 as follows. First, the combined resistance value of the pinch detection resistors Rr11 and Rr12 is set so that the torque of the PW motor 102 is equal to or less than the specified torque value, and the maximum torque is set to a safe value. Further, the resistor Rr11 for detecting the occurrence of the motor lock is set so that the torque of the PW motor 102 is interposed and is equal to or more than a specified torque value and the current flowing through the PW motor 102 is equal to or less than the lock current.

[0056]

As described above, according to the power window drive control device of the present invention, when the power supply from the power supply to the motor is controlled by the semiconductor switch, the second semiconductor switch is controlled by the reference voltage generation means. Is generated as a reference voltage having a voltage characteristic substantially equivalent to the voltage characteristic of the voltage between the terminals of the semiconductor switch, the difference between the voltage between the terminals of the semiconductor switch and the reference voltage is detected by the detection means, and the control means The on / off control of the semiconductor switch is performed according to the difference between the detected terminal voltage and the reference voltage. For example, when a window glass catches foreign matter, the rotation speed of the motor decreases and the back electromotive force is reduced. Since the load current decreases, the load current increases rapidly, and the voltage between the terminals of the semiconductor switch also changes rapidly. When the difference from the pressure exceeds a first predetermined value, it is detected that a window glass has caught foreign matter, and the semiconductor switch is controlled to be turned off. When the load exceeds a second predetermined value, the on / off control of the semiconductor switch is repeatedly performed to limit the load current, that is, the motor torque, so that the load current is directly detected. Since the pinching is detected, the torque of the motor can be directly detected, and the detection accuracy can be improved.

After the jamming is detected, the semiconductor switch is turned on / off to limit the load current, thereby controlling the torque of the motor. When the load becomes normal during the OFF control, the normal operation can be restored. Furthermore, unlike the related art, since a sensor and the like are not required and the configuration is simple, the system scale of the power window drive control device can be reduced, and realization at low cost is possible. Further, conventionally, it is necessary to correct the entrapment determination threshold value, and the man-hour for the adjustment work has been a problem, but this can be eliminated.

Also, according to the present invention, the switching means
For example, by switching and setting the resistance value of the second load between the time when the window glass is automatically closed and the time when the window glass is not moved, it is possible to detect the pinch or lock abnormality more accurately.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a power window drive control device according to an embodiment of the present invention.

FIG. 2 is a configuration diagram of a switching device used in the power window drive control device of the embodiment.

FIG. 3 is an explanatory diagram illustrating a voltage waveform of a motor when an abnormality occurs.

FIG. 4 is a configuration diagram of a conventional power window drive control device.

[Explanation of symbols]

 Reference Signs List 101 power supply 102 PW motor 110 YASFET (chip constituent part) 111 drive circuit (control means) 203, 204 switch (operation switch) 222 interface circuit 223 control microcomputer 301 overcurrent detection function 302 power supply enable circuit 303 inrush current mask circuit (masking) 304 ON / OFF count integration circuit 305 Charge pump 306 Overheat cutoff protection circuit QA Main control FET QB First reference FET QC Second reference FET TR1 Transistor (switching means) RG Internal resistance Rr1, Rr11, Rr12 Resistance (second load) R1 To R10, Rr2 Resistance CMP1, CMP2 Comparator (detection means) ZD1 Zener diode D1 Diode SW1 Switch VB Power supply voltage

 ──────────────────────────────────────────────────続 き Continued on the front page F-term (reference) 2E052 AA09 CA06 EA14 EB01 GA08 GB06 GC01 GC05 GD01 HA01 3D127 AA02 AA09 AA17 AA19 BB01 CB05 DF34 DF35 DF36 FF05 FF06 FF20 5H571 AA03 BB07 CC04 EE23 MM03B02 LL03

Claims (5)

[Claims] 1. A power window drive control device comprising a motor, for opening and closing a window glass by a driving force of the motor, wherein the power window drive control device is switching-controlled in accordance with a control signal supplied to a control signal input terminal. A semiconductor switch for controlling power supply to a motor, a circuit in which a semiconductor switch and a second load are connected in parallel to the motor, and a second semiconductor switch and a second load that are switching-controlled in accordance with the control signal are connected in series; Reference voltage generating means for generating a voltage between terminals of the second semiconductor switch as a reference voltage having a voltage characteristic substantially equivalent to a voltage characteristic of a voltage between terminals of the semiconductor switch; and a voltage between the terminals of the semiconductor switch and the reference voltage. Detecting means for detecting the difference between the two, and turning on / off the semiconductor switch according to the difference between the detected inter-terminal voltage and the reference voltage. Power window drive control apparatus characterized by comprising a control unit for full control, the. 2. The apparatus according to claim 1, wherein an abnormality in the opening / closing movement of the motor or the window glass is determined based on a control signal for controlling on / off of the semiconductor switch or a voltage of the motor. Power window drive control device. 3. An operation switch for instructing automatic opening or closing movement of the window glass automatically or manually, and switching means for switching and setting the resistance value of the second load according to the instruction of the operation switch. The power window drive control device according to claim 1 or 2, wherein: 4. The semiconductor switch according to claim 1, wherein the semiconductor switch and the second semiconductor switch have equivalent characteristics with respect to a transient voltage characteristic of a terminal voltage when transitioning from an off state to an on state. 4. The power window drive control device according to 2 or 3. 5. A current capacity of the second semiconductor switch is smaller than a current capacity of the semiconductor switch, and a resistance value ratio between the motor and the second load is as small as possible with a current capacity ratio of the semiconductor switch and the second semiconductor switch. 5. The power window drive control device according to claim 1, wherein the power window drive control device is set to be in inverse proportion.