JP2002075839A - Exposure system, mask structure used therefor, exposure method, semiconductor device manufactured by using the same, and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prolong the service life of a mask, to prevent a decline in exposure accuracy of the mask, and so on, by preventing the adhesion and deposition of contaminants to and on the surface of the mask. SOLUTION: Humidity is controlled by using a mask structure 15 at least partially having a photo catalyst and providing an auxiliary light source 21 which appropriately emits auxiliary light to the structure 15 in an exposure chamber 22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus used for forming a desired pattern on a substrate such as a semiconductor substrate, a mask structure used in the exposure apparatus, an exposure method, and a method using the exposure apparatus. The present invention relates to a manufactured semiconductor device and a semiconductor device manufacturing method.

[0002]

2. Description of the Related Art In the manufacture of a semiconductor device such as a semiconductor integrated circuit, or a device having a fine pattern formed thereon, such as a micromachine or a thin-film magnetic head, light (visible light) is applied to a substrate as a transfer object through a mask as an original. In general, a desired pattern is formed on the substrate by irradiating light or ultraviolet light) or X-rays. For example, in the case of a semiconductor integrated circuit, a mask corresponding to a desired circuit pattern is prepared, and this mask is prepared for a semiconductor substrate having a resist formed on the surface, and a semiconductor substrate having a resist formed on the surface. The mask is irradiated with light or X-rays through this mask, the resist is selectively exposed, and a circuit pattern is transferred to the resist. A circuit will be formed. Hereinafter, the formation of a device having a fine pattern as described above will be described using the case of manufacturing a semiconductor integrated circuit as an example.

[0003] In recent years, as the density and speed of semiconductor integrated circuits have increased, the pattern line width of the integrated circuits has been reduced, and there has been a demand for higher performance semiconductor manufacturing methods. Thus, printing apparatus as (exposure apparatus), KrF laser (248 nm), ArF laser (193 nm), F ₂ laser (157 nm), EUV / X-ray region (0.2 to 15
nm) etc., a stepper (exposure apparatus) using an exposure light source having a shorter wavelength than the conventional one is being developed.

Further, a chemically amplified resist using an acid catalyst has come to be used as a resist used when transferring a desired pattern to an object to be transferred.

[0005]

As the line width of a desired pattern becomes finer, it becomes very difficult to take measures against dust and the like. In addition to the strict size and number restrictions on ordinary garbage, the sensitivity of processes to chemical substances has also increased, and chemical contamination has become a problem in clean rooms where semiconductor integrated circuits are manufactured. . These are substances generated by decomposition of the resist, diffused substances generated during the process such as development and cleaning of the resist, and volatile substances caused by facilities such as adhesives and wall materials.

In such a chemical environment, if exposure is performed for a long time using light having a short wavelength such as far ultraviolet light or X-rays, contamination of the mask surface, that is, generation of attached matter, causes transmission of light through the mask. The rate, reflectivity, scattering, etc. change. In particular, when a chemically amplified resist is used as the resist, the acid generator or acid and the decomposed substance evaporate during or after exposure, accelerating the contamination of the mask.

FIG. 19 shows one reaction example of a chemically amplified resist. T- contained in the resist as a dissolution inhibitor
The Boc (tertiary-butoxy carbonyl) group decomposes to form volatile butenes.

Further, in the X-ray projection exposure, the contamination of the mask is a serious problem since the object to be transferred (the object to be transferred) and the mask are exposed with a gap of several tens μm or less. These deposits are not uniform in shape and composition but tend to be more present depending on the environment, but it is not clear. I guess this is not a simple photochemical reaction,
It is considered that recombination, multiple reactions, deposition, crystallization, and the like are acting in a complicated manner. When such deposits are generated, it is conceivable to remove them by cleaning. However, especially in the case of an X-ray mask or the like, cleaning is very difficult because the shape of the absorber has a high aspect and cannot be removed by cleaning. Garbage is also generated. In addition, since the support film is a thin film, the strength is weak, and it is necessary to reduce the number of times of washing.

Further, if exposure is continued while leaving contamination on the mask surface such as dust and adhered substances, unevenness of exposure and a decrease in exposure amount control, and a decrease in alignment accuracy due to a decrease in alignment light transmittance, etc. The effect on the transfer pattern was remarkable.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and reduces the number of times of cleaning of a mask by preventing the adhesion and deposition of contamination on the mask surface, or eliminates the need for cleaning itself, and extends the life of the mask. It is an object of the present invention to provide an exposure apparatus that can achieve the above, and an exposure apparatus that can prevent a decrease in exposure accuracy due to contamination on a mask surface. Still another object is to provide a mask structure, an exposure method, a semiconductor device, and a semiconductor device manufacturing method used in such an exposure apparatus.

[0011]

Means for Solving the Problems The present inventors have conducted trial and error investigations as a measure for preventing adhesion to the mask surface and preventing deposition, and as a result, they have found that the following means can solve the problem. That is, in an exposure apparatus that transfers a desired pattern formed on a mask structure to a transfer target body by exposure, the mask structure constituting the original plate includes a substance having a photocatalytic action, and an exposure chamber and an exposure chamber in the exposure apparatus. And / or an exposure apparatus having means for controlling humidity in a room separate from the exposure chamber in the exposure apparatus.

Further, the exposure apparatus may have means (such as an auxiliary light source) for irradiating the mask structure with auxiliary light. Further, it is preferable that the exposure apparatus has a mask cassette chamber, which is the separate chamber for storing the original, and the humidity of the mask cassette chamber is controlled. The exposure apparatus may include a unit that irradiates the mask structure with auxiliary light in the exposure chamber and / or the separate chamber. Further, the humidity managed in the exposure apparatus is preferably 4% or more and 80% or less (4-80%).

It is preferable that the auxiliary light is one of ultraviolet light, vacuum ultraviolet light, and X-ray.

Further, it is preferable that the exposure apparatus has an exhaust port for exhausting decomposition products of the deposits attached to the mask structure. The exposure apparatus preferably has a partition provided between the exposure chamber and the separate chamber. Further, the exposure light used in the exposure apparatus is preferably X-ray, EUV, or excimer laser light.

In the mask structure of the present invention, it is preferable that the mask structure, which is a structure having the original plate, is obtained by implanting metal ions into the substance having a photocatalytic action. Preferably, the metal injected into the substance having the photocatalytic function is Cr (chromium) or V (vanadium).

In the exposure method according to the present invention, exposure is performed by using the exposure apparatus to transfer a desired pattern formed on the original to the transfer target, and the structure is irradiated with the auxiliary light. be able to.

In the present invention, the exposing method includes a step of exposing a desired pattern formed on the original to the object to be transferred and not using the original, or an exposure light or an object to be exposed and When the transmittance of the alignment light used for alignment of the original plate is deteriorated, it is preferable to irradiate the structure with the auxiliary light in the exposure room and / or the separate room where the humidity is controlled.

In the exposure method, when a desired pattern is transferred to the transfer object by exposure, it is preferable to use a chemically amplified resist for the transfer object. In the exposure method, when deterioration in transmittance of the exposure light or the alignment light is caused by an adhered substance attached to the structure, the exposure is interrupted, and the structure is irradiated with the auxiliary light. And whether or not to interrupt the exposure is preferably determined according to the accuracy required for the transfer object. Further, it is preferable that the exposure light used in the exposure method is X-ray, EUV, or excimer laser light.

The semiconductor device of the present invention is manufactured by using the exposure apparatus to transfer a desired pattern formed on the original plate to the transfer target by exposure, and processing and forming the transfer target. .

In the device manufacturing method of the present invention, a desired pattern formed on an original is transferred to a transfer-receiving body by exposure,
In the device manufacturing method for manufacturing a device by processing and forming the transfer target, the exposure apparatus can be used for the exposure.

According to a semiconductor device manufacturing method of the present invention, a manufacturing device group for various processes including the exposure apparatus is installed in a semiconductor manufacturing factory, and a semiconductor device is manufactured by a plurality of processes using the manufacturing device group. And a step.

Further, in the semiconductor device manufacturing method of the present invention, the step of connecting the group of manufacturing apparatuses via a local area network includes the step of connecting the group of manufacturing apparatuses between the local area network and an external network outside the semiconductor manufacturing factory. And data communication of information on at least one of the devices.

Further, according to the semiconductor device manufacturing method of the present invention, a database provided by a vendor or a user of the exposure apparatus is accessed via the external network to obtain maintenance information of the manufacturing apparatus by data communication.
Alternatively, production management can be performed by performing data communication between the semiconductor manufacturing plant and another semiconductor manufacturing plant via the external network.

A semiconductor manufacturing plant accommodating the exposure apparatus of the present invention includes a manufacturing apparatus group for various processes including the above-described exposure apparatus, a local area network connecting the manufacturing apparatus group, and a local area network connected to the outside of the factory. The information processing apparatus may include a gateway that enables access to an external network, and may enable data communication of information on at least one of the manufacturing apparatuses.

[0025] The maintenance method of the exposure apparatus of the present invention is a maintenance method of the exposure apparatus installed in a semiconductor manufacturing factory,
A step of providing a maintenance database connected to an external network of a semiconductor manufacturing plant by a vendor or a user of the exposure apparatus, and a step of permitting access to the maintenance database from the inside of the semiconductor manufacturing factory via the external network. Transmitting the maintenance information stored in the maintenance database to the semiconductor manufacturing factory via the external network.

The exposure apparatus according to the present invention is the exposure apparatus, wherein a display, a network interface,
A computer that executes network software, so that the maintenance information of the exposure apparatus can be data-communicated via a computer network.

Further, the network software provides a user interface on the display for accessing a maintenance database provided by a vendor or a user of the exposure apparatus connected to an external network of a factory where the exposure apparatus is installed. Then, it is possible to obtain information from the database via the external network.

[0028]

A typical action of the photocatalyst is an action of chemically decomposing various substances by irradiation with light having a short wavelength such as ultraviolet rays or X-rays. Further, it exhibits an effect as an optical semiconductor, becomes conductive by irradiation of light, exhibits an antistatic effect, and also exhibits an effect of preventing adhesion of contaminants.

According to the present invention, there is provided an exposure apparatus for transferring a desired pattern onto a transfer object by performing exposure using a mask structure having a photocatalyst at least partially.
The photocatalyst can be made to act by irradiating the exposure light or the auxiliary light and controlling the humidity at all times or at the time of non-exposure, thereby cleaning the original mask and preventing contamination.

Further, in an exposure apparatus for transferring a desired pattern onto a transfer object by performing exposure using a mask structure having a photocatalyst at least partially, the photocatalyst is caused to act by exposure light during exposure. Separately, it has an exposure room and / or a unit for irradiating auxiliary light (a room separate from the exposure room), detects dirt on the mask, and when a certain level is reached, moves to the exposure room and / or the unit to decompose. Promote. The exposure room and / or unit is managed separately from the exposure atmosphere, and a light source and an environment most suitable for photocatalysis are prepared. further,
The exposure chamber and / or unit has an exhaust port to exhaust decomposition products, prevent re-adhesion, and increase the efficiency of adhering substance decomposition.

Further, in an exposure apparatus having a mask cassette chamber (separate chamber from the exposure chamber) for storing a mask when the object to be transferred is not exposed to light, the auxiliary light is radiated.
A mask cassette chamber can be used together with or instead of the unit. That is, a light source and an environment most suitable for the photocatalysis are prepared in the mask cassette chamber, and the mask can be cleaned during an unused time, thereby preventing the contamination of the mask.

With the above-described configuration, the number of times of cleaning the mask can be reduced or eliminated, and the life of the mask can be extended.

Further, the photocatalyst requires energy higher than a certain energy (light having a short wavelength) in order to act as a catalyst due to the band gap of the substance. A light absorption band is also generated, and a photocatalytic action can be caused in the absorption band. Typical titanium oxide as a photocatalyst is 3
It absorbs light having a wavelength of 80 nm or less to cause a photocatalytic effect. By ion-implanting Cr (chromium), V (vanadium), or the like into titanium oxide, a wavelength of about 450 nm can be obtained depending on the amount of ion implantation. Long wavelength light can be used.

Further, by transferring a desired pattern onto a transfer object using the exposure apparatus of the present invention, unevenness in exposure due to mask contamination and a reduction in exposure amount control, and furthermore, an alignment accuracy due to a reduction in alignment light transmittance. Mass production of high-precision baking is possible without being affected by a decrease in image quality. Further, by transferring a desired pattern onto a processing substrate using the exposure apparatus of the present invention, and processing and forming the pattern, mass production of high-performance devices (such as semiconductor devices) becomes possible.

[0035]

Next, the present invention will be described in more detail by way of examples with reference to the drawings. [First Embodiment] An embodiment of an X-ray exposure apparatus according to the present invention will be described. FIG. 1 is a schematic view of a main part of an exposure apparatus according to a first embodiment of the present invention. This X-ray exposure apparatus uses synchrotron radiation (SR) light as an X-ray light source. The present invention is applicable not only to X-ray exposure but also to exposure using an excimer laser or EUV.

In FIG. 1, reference numeral 11 denotes an SR radiation source (storage ring). A synchrotron radiation (SR) light 12 in the form of a sheet beam emitted from the SR radiation source 11 is a beam having a uniform light intensity in the lateral direction. It has a shape (sheet beam shape) which spreads little in the vertical direction. This SR light 12 is converted into a cylindrical mirror (convex mirror).
The light is reflected at 13 and expanded in the vertical direction to form a beam having a substantially square cross section, thereby obtaining a square exposure area. The expanded SR light 12 is adjusted by a shutter 14 so that the exposure amount in the irradiation area becomes uniform, and the SR light 12 having passed through the shutter 14 is guided to an X-ray mask (mask structure) 15 having an original. . The X-ray mask 15 is attracted to the mask stage 17 and is held at a position facing the wafer 16.

The wafer 16 is an object to be exposed (an object to be transferred), and is held by a wafer chuck 18. The wafer chuck 18 is mounted on a wafer stage 19, and moves the wafer stage 19 to position the wafer 16.

The alignment unit 20 has an optical system for detecting alignment marks for positioning provided on each of the X-ray mask 15 and the wafer 16 and a calculation unit for calculating a deviation between the two. Positioning can be performed.

After the alignment of the X-ray mask 15 and the wafer 16, the pattern formed on the X-ray mask 15 is exposed and transferred onto the wafer 16 by a step-and-repeat method, a scanning method, or the like.

The X-ray mask 15 will be described with reference to FIG.
FIG. 2 is a cross-sectional view of the mask structure according to the first embodiment of the present invention. The X-ray mask structure is a 2.0 mm thick Si
Frame 1 made of and CVD to become an X-ray permeable support film 2
Holding film 1 with SiN 2.0 μm, TaX-ray absorber 3 formed by sputtering, and adhesive 5
And titanium oxide 6 which is a substance having a photocatalytic function is deposited after the absorber 3 is formed. When forming the titanium oxide 6 by sputtering, a direction is given by using a mesh or the like. Since the titanium oxide 6 is not formed on the side surface of the absorber 3, the line width of the absorber 3 can be easily controlled.

X-ray exposure is performed using the above-described mask. As shown in FIG. 1, the mask stage 17 is
An auxiliary light source 21 of any one of ultraviolet light, vacuum ultraviolet light, and X-ray is provided near the X-ray mask 15 so that the auxiliary light from the auxiliary light source 21 can be irradiated to the X-ray mask 15 within a range that does not affect the wafer 16. It has become. As the auxiliary light source 21 in the exposure chamber 22, specifically, a mercury lamp, black light, laser, laser plasma X-ray, or the like is used.

The titanium oxide 6 absorbs light having a short wavelength of 380 nm or less, and causes photocatalysis. If the wavelength is 380 nm or less, light having a longer wavelength at which the absorptance is higher is preferable, and a mercury lamp, a black light, a xenon lamp, a laser, or the like which emits a large amount of light having a wavelength of 350 nm to 380 nm is effective. , Vacuum ultraviolet, X
Line, etc.).

In the X-ray exposure apparatus according to the present embodiment, as shown in FIG. The exposure chamber 22 is maintained in a vacuum or a light element atmosphere such as He except for water, and only water is supplied from the steam supply device 24 through the mass flow 25 using He gas as a carrier gas. The exposure chamber 2 is operated in conjunction with the moisture meter 23.
The water content (humidity) in 2 is adjusted so that it can be controlled over a wide range from ppm order to 90% humidity. The water content may be changed during exposure and when the photocatalytic action is mainly caused, or the water content may be kept constant if possible depending on the exposure conditions.

Since the mask structure shown in FIG. 2 also has a photocatalyst in the exposed area, the humidity in the exposure chamber 22 is controlled during the non-exposure as well as during the X-ray exposure, and the auxiliary light from the auxiliary light source 21 is controlled. Irradiation causes a photocatalytic action, which prevents decomposition of attached matter and adhesion of dust due to antistatic. With such an X-ray exposure apparatus, highly accurate X-ray exposure corresponding to mass production could be performed.

[Second Embodiment] An X-ray exposure apparatus according to a second embodiment of the present invention will be described. FIG. 3 is a schematic view of a main part of an exposure apparatus according to a second embodiment of the present invention.
The configuration is the same as that of the embodiment. However, the exposure chamber 22 is in a vacuum or a light element atmosphere such as He so that the attenuation of X-rays is small, and the water content is controlled in the order of ppm. In this state, the pattern of the X-ray mask 15 is transferred to the wafer 16 by X-ray exposure. However, when the transmittance of the X-rays or the transmittance of the laser beam used for alignment is deteriorated due to the adhered substance, the exposure is interrupted and the X-ray mask 15 is moved to the auxiliary light source 21 as shown in FIG.
The position is changed so as to be preferentially irradiated by the auxiliary light from the wafer (the wafer side may be moved). And
The auxiliary light source 21 irradiates the X-ray mask 15 to activate the photocatalysis. Except for the moisture, the conditions are controlled under the same conditions as during the exposure.
The gas is supplied as a carrier gas through the mass flow 25. The moisture content is adjusted in conjunction with the moisture meter 23, and the humidity is controlled to 1 to 90%, preferably 4 to 80%. The level at which the exposure is interrupted due to the deterioration of the X-rays or the alignment light is determined by the accuracy required for the object to be transferred. By using light having an efficient wavelength, the reaction speed is increased by moisture, the decomposition reaction of the attached matter by photocatalysis is promoted, and the X-ray mask 15 can be cleaned.

Third Embodiment An X-ray exposure apparatus according to a third embodiment of the present invention will be described. FIG. 4 is a schematic view of a main part of an exposure apparatus according to a third embodiment of the present invention.
FIG. 6 is a schematic diagram of a main part showing a modification of the exposure apparatus of FIG. 4.
The X-ray exposure apparatus shown in FIGS. 4 and 5 uses synchrotron radiation (SR) light as an X-ray light source.
4 and 5, in addition to the exposure chamber 22 (and a mask cassette chamber (not shown) (if there is a separate chamber for the exposure chamber 22), this mask cassette chamber), a separate chamber (unit).
4 has an auxiliary light source 21 only in the unit 26, and FIG. 5 has an auxiliary light source 21 in both the exposure chamber 22 and the unit 26 (in FIGS. 4 and 5, the water vapor supply device 24 and the moisture meter are used). 23 are both provided in the unit 26). 4 and 5, the same reference numerals as those in FIG. 1 indicate the same components as those in FIG.

Next, the X-ray mask (mask structure) 15 will be described with reference to FIGS. Here, FIG. 6 is a sectional view of a mask structure according to the third embodiment of the present invention, and FIG. 7 is a sectional view of another mask structure according to the third embodiment of the present invention. .

The X-ray mask (mask structure) is 2.0 m
A holding frame 1 made of m-thick Si, an X-ray absorber 3 made of 2.0 μm-thick SiC and W formed by CVD to be an X-ray permeable support film 2, and a holding frame formed by anodic bonding 1 and a reinforcing member 4 made of Pyrex (registered trademark) glass adhered thereto.

Titanium oxide 6 as a photocatalyst is formed to a thickness of 1000 nm by applying and firing an alkyl titanate on the periphery (outside the exposure area) of the mask and on the reinforcing member 4. The titanium oxide 6 on the reinforcing body 4 may be coated with titanium oxide powder using a binder such as Teflon (registered trademark). Further, SiO ₂ or the like may be formed as a separation film (not shown) on the reinforcing member 4 so that the reinforcing member 4 and the titanium oxide 6 do not affect each other.

In the X-ray exposure area of the mask of this embodiment,
No titanium oxide layer is formed. By forming the film outside the exposure region, the film thickness can be set to a necessary and sufficient amount for the reaction without distributing the attenuation of the X-ray due to the absorption of the titanium oxide and the change due to the X-ray of the titanium oxide.

X-ray exposure is performed using the above-described mask. In FIG. 4, an auxiliary light source 21 of ultraviolet light, vacuum ultraviolet light, or X-ray is provided near the mask stage 17 only in the separate room 26 and in FIG. The auxiliary light from the auxiliary light source 21 can be irradiated to the X-ray mask 15 within a range where there is no influence. As the auxiliary light source 21 in the exposure chamber 22, specifically, a mercury lamp, black light, laser, laser plasma X-ray, or the like is used.

In the exposure apparatus as shown in FIG.
By irradiating the auxiliary light onto the X-ray mask 5, it is possible to prevent the adhesion of dust to some extent due to the decomposition of the attached matter and the antistatic action (when the desired pattern formed on the X-ray mask 15 is exposed on the wafer 16 and the X-ray Even when the mask 15 is not used, the X-ray mask 15 is irradiated with auxiliary light from the auxiliary light source 21 (humidity is also managed). However, when the X-ray transmittance or the transmittance of the laser beam used for alignment deteriorates due to the adhered substance on the X-ray mask 15, the exposure is interrupted,
The line mask 15 is moved to the unit 26 and irradiated with auxiliary light from the auxiliary light source 21. Similarly, in the apparatus shown in FIG. 4, when the transmittance of the X-rays or the transmittance of the laser beam used for alignment is deteriorated due to the adhered substance, the exposure is interrupted, the X-ray mask 15 is moved to the unit 26, and the auxiliary light source is moved. Irradiation by 21 (humidity is also controlled). The level at which the deterioration of the X-rays or the alignment light interrupts the exposure is determined by the accuracy required for the object to be transferred.

The exposure chamber 22 is often maintained in a vacuum or a light element atmosphere such as He during exposure so as to reduce X-ray attenuation. However, the unit 26 is managed under conditions close to the exposure chamber 22 except for moisture, and only moisture is supplied from the steam supply device 24 through the mass flow 25 using He gas as a carrier gas. The moisture content is adjusted in conjunction with the moisture meter 23, the humidity is controlled to 1 to 90%, preferably 4 to 80%, and an exhaust port M is provided. In FIGS. 4 and 5, a partition is provided between the exposure chamber 22 and the unit 26. However, the partition may not be provided if the exposure is not affected by performing differential evacuation or the like. The auxiliary light source 21 of the unit 26 includes a mercury lamp, a black light, a xenon lamp, a laser,
Alternatively, laser plasma X-ray or the like is used.

The titanium oxide 6 absorbs light having a short wavelength of 380 nm or less, and causes photocatalysis. If it is 380 nm or less, light having a longer wavelength at which the absorptance becomes higher is preferable, and a mercury lamp, a black light, a xenon lamp, a laser, or the like which emits a large amount of light having a wavelength of 350 nm to 380 nm is effective.

The action of adhering matter decomposition by photocatalysis is described in detail. The photocatalyst absorbs light energy to generate electrons and holes, and the electrons and holes react with water to form a hydroxyl radical (. OH) and superoxide ions (O ₂ ⁻ ), and these radicals and ions decompose attached substances such as organic substances. Therefore, if the water content is low (the humidity is low), the reaction becomes slow. But,
If the humidity is too high, the maintenance of the apparatus is affected due to dew condensation or the like. Further, by providing the exhaust port 27, the decomposition product of the adhered substance is exhausted to promote the reaction, and the reattachment of the intermediate substance of the decomposed substance is also prevented.

Further, the electrons generated from the photocatalyst are transmitted to the conductor, and the substances attached to the conductor surface can be decomposed by the reducing action. As a result, recombination of electrons and holes once generated can be prevented, which leads to an increase in efficiency.
In this embodiment, the SiC film used as the support film 2 is
Since there is some conductivity, the conductive film 7 may be provided as shown in FIG. 7 without providing the conductive film 7 as shown in FIG.
As the conductive film 7, a noble metal such as Au or a metal oxide such as ITO having a thickness of several nm or less may be formed.

However, when the conductive film 7 is not provided, it is preferable that the absorber 3 made of a metal as a conductor is in contact with the photocatalyst 6. Whether or not to provide the conductive film 7 also depends on the area ratio between the X-ray absorbing portion and the X-ray transmitting portion in the exposure region. By irradiating the auxiliary light from the auxiliary light source to the photocatalyst provided outside the exposure region, not only the surface of the photocatalyst but also the attached substance on the support film and the absorber surface in the exposure region to which the electrons have been transmitted are decomposed.

The X-ray exposure apparatus provided with the unit 26 and using a photocatalyst to clean the mask by using a photocatalyst function could perform high-precision X-ray exposure corresponding to mass production.

[Fourth Embodiment] An X-ray exposure apparatus according to a fourth embodiment of the present invention will be described. FIG. 8 is a schematic view of a main part of an exposure apparatus according to a fourth embodiment of the present invention. FIG.
FIG. 9 is a view of the exposure apparatus of FIG. 8 as viewed from above. Exposure room 22
The inside has the same configuration as that of the third embodiment. A configuration having the unit 26 as shown in FIGS. 4 and 5 may be used.

In the X-ray exposure apparatus of this embodiment, as shown in FIG. 9, an auxiliary light source 21 is provided in a mask cassette chamber 28. The mask cassette chamber 28, which is a separate chamber from the exposure chamber 22, is managed under conditions close to the exposure chamber 22 except for water, and only water is supplied from the steam supply device 24 through the mass flow 25 using He gas as a carrier gas. Further, the amount of moisture is adjusted in conjunction with the moisture meter 23, and the humidity is adjusted to 1 to 90.
%, Preferably 4 to 80%, and an exhaust port 27 is provided. As the auxiliary light source 21, a mercury lamp, black light, xenon lamp, laser, laser plasma X-ray, or the like is used. The speed of the reaction is increased by moisture using light having an efficient wavelength by the auxiliary light source 21. And by providing the exhaust port 27,
Decomposition products of the deposits are exhausted to promote the reaction and prevent reattachment of the intermediates of the decomposition products. Further, the atmosphere of the mask cassette chamber 28 may be an atmosphere of a clean room environment from which dust and the like are sufficiently removed. Normally, humidity is 40%
After the cleaning is completed, the condition is returned to the condition close to the exposure chamber 22. Furthermore, the titanium oxide as a photocatalyst can continue its operation even under normal room lighting (such as a fluorescent lamp).

Since the mask structure shown in FIG. 2 also has a photocatalyst in the exposure region, the mask can be cleaned using the photocatalyst in the mask cassette chamber 28 as well as during the X-ray exposure. Furthermore, since the photocatalyst is brought into a conductive state by exposure or irradiation of auxiliary light, adhesion of dust and the like on the mask can be prevented. With such an X-ray exposure apparatus, highly accurate X-ray exposure corresponding to mass production could be performed.

In the exposure apparatus of this embodiment, the mask structure shown in FIG. 6 or 7 can be used.
0 mask structure (described in a fifth embodiment described later), etc.
Of course, any mask that has a photocatalyst can be used.

[Embodiment 5] FIG. 10 is a sectional view of a mask structure according to a fifth embodiment of the present invention. The mask structure of this embodiment may be used in an X-ray exposure apparatus as in the first or second embodiment, or may be used in an X-ray exposure apparatus having a unit as in the third embodiment. I do not care. In addition, X having a mask cassette chamber as in the fourth embodiment.
It may be used in a line exposure apparatus. Further, it may be used in an X-ray exposure apparatus having both a unit and a mask cassette chamber.

As the X-ray mask structure, a 2 mm thick S
i, a holding frame 1 made of i, and a CV serving as an X-ray permeable
An X-ray absorber 3 made of 2.0 μm C (diamond) and W formed in D, and a reinforcing body 4 made of Pyrex glass adhered to the holding frame 1 by anodic bonding.

The titanium oxide 6 as a photocatalyst is applied to the peripheral portion of the mask (outside the exposure area) and the reinforcing member 4 by resistance heating or EB.
The film is formed by vapor deposition, sputtering, or the like. SiO ₂ or the like may be formed as a separation film (not shown) so that the reinforcing member 4 and the titanium oxide 6 do not affect each other. Cr (2 × 10 ⁻⁶ mol / g) ions are implanted into the titanium oxide 6 film. Thereby, the absorption wavelength of titanium oxide 6 becomes 450
nm, and a long wavelength having a high absorptance can be used, and the efficiency increases. Further, usable light sources increase, and incandescent lamps such as halogen lamps can be used.
When using a xenon lamp or mercury lamp, 3
Since the light having a wavelength of 80 nm or more can be used, the use efficiency of the lamp is improved. Generally, as the Cr ion implantation amount increases, the usable wavelength becomes longer. Therefore, the implantation amount is adjusted depending on the lamp used. In addition, V or the like can be used as the metal to be injected.

Since the C (diamond) film, which is the support 2 of the mask used in the present embodiment, has conductivity, the titanium oxide 6 provided outside the exposure region is irradiated with auxiliary light from an auxiliary light source. At the same time, not only the surface of the titanium oxide 6 but also the deposits on the surface of the support film and the absorber in the exposure region where the electrons have been transmitted are decomposed.

By injecting a metal such as Cr into titanium oxide, the wavelength of the absorption wavelength can be lengthened, and the reaction efficiency and lamp efficiency can be increased. The decomposing action and antistatic action of the photocatalyst can also prevent adhesion of dust and the like on the mask. By using such a mask and performing exposure with the X-ray exposure apparatuses of the first to fourth embodiments, highly accurate X-ray exposure corresponding to mass production could be performed.

[Sixth Embodiment] An X-ray exposure apparatus according to a sixth embodiment of the present invention will be described. FIG. 11 is a schematic view of a main part of an exposure apparatus according to a sixth embodiment of the present invention. In the X-ray reduction exposure apparatus of FIG. 11, 31 is an undulator light source as an X-ray source, 32 is an X-ray beam, 33 is a total reflection mirror as an illumination optical system, 34 is a reflection mask, and 35 is a reflection mask 14. A mounted mask stage 36 indicates a projection optical system. Further, reference numeral 37 denotes a wafer, 38 denotes a wafer stage on which the wafer 37 is mounted, and 39 denotes a vacuum vessel which is an exposure chamber for keeping the entire optical system at a vacuum in order to prevent attenuation of X-rays. Further, 40 is a mask cassette chamber which is a separate room from the exposure chamber, 41 is an auxiliary light source, 42
Is an exhaust port, 43 is a steam supply device, 44 is a moisture meter, 45
Indicates mass flow.

The undulator light source 31 emits thin and parallel X-rays in the form of a pencil beam.
The X-rays are reflected by a total reflection mirror 33 to cut short-wavelength components, and irradiated as a substantially monochromatic X-ray beam 32 to a reflective mask 34. A desired pattern is formed on the reflective mask 34, and X-rays are reflected according to this pattern and guided to the projection optical system 36. Then, the pattern of the reflection type mask 34 is reduced and projected on the wafer surface to expose the resist.

The reflection type mask 34 will be described with reference to FIG. The X-ray reflection type mask structure (reflection type mask) is composed of a reflection substrate 9 having a multilayer structure of Mo / Si on a substrate 8 made of SiC, and a non-reflection pattern 10 made of W. Titanium oxide 6, which is a photocatalyst, is formed by resistive heating or EB evaporation around the mask (outside the exposure area).
It is formed by sputtering or the like. Multilayer film 9 and titanium oxide 6
So they do not affect each other, it may be formed of SiO ₂ or the like as a separation membrane (not shown).

In the X-ray reduction exposure apparatus of the present embodiment, FIG.
As shown in the figure, an auxiliary light source 41 is installed in the mask cassette chamber 40. In the mask cassette chamber 40, impurities other than water are managed under conditions close to the vacuum container 39, and only moisture is supplied from the steam supply device 43 through a mass flow using He gas as a carrier gas. The moisture content is adjusted in conjunction with the moisture meter 44, the humidity is controlled to 1 to 90%, preferably 4 to 80%, and an exhaust port 42 is provided. As the auxiliary light source 41, a mercury lamp, black light, xenon lamp, laser, laser plasma X-ray, or the like is used. Using light of efficient wavelength,
By increasing the speed of the reaction with moisture and providing the exhaust port 42, the decomposition products of the adhered substances are exhausted to promote the reaction, and the reattachment of the intermediate substance of the decomposed substances is prevented. In addition, the titanium oxide 6 (FIG. 12) can continue its operation even in a normal room light (fluorescent lamp or the like).

As shown in FIG. 12, in the reflection substrate 9, Mo / Si used for the reflection substrate 9 having a multilayer structure in the present embodiment has at least Mo conductive. As the other reflection film, a combination of a heavy element and a light element such as Mo / Be which is often used is mainly used, and the non-reflection pattern 10 is also mainly composed of a heavy element. As the heavy element, a metal is often used, and the mask structure is often conductive. Therefore, the electrons generated by the photocatalytic action of the titanium oxide 6 are transmitted to the reflection film and the non-reflection pattern, and the entire surface can be cleaned by the reduction action.

By providing the exhaust port 42 (FIG. 11), the decomposition products of the adhered substances are exhausted to promote the reaction and prevent the intermediate substances of the decomposed substances from re-adhering. further,
The exhaust port 42 can also prevent recombination of the once generated electrons and holes, leading to an increase in efficiency. further,
The cleaning may be performed by providing a separate chamber separate from the mask cassette chamber 40 or the like.

Exposure with the X-ray reduction exposure apparatus as described above prevented contamination of the mask surface and reduced or eliminated the number of times of cleaning. Further, the life of the mask can be extended, and high-precision X-ray reduction exposure corresponding to mass production can be performed.

[Seventh Embodiment] FIG. 13 shows a seventh embodiment of the present invention.
It is sectional drawing of the mask structure which concerns on Example. The mask structure of this embodiment may be used in an X-ray reduction exposure apparatus having a mask cassette chamber as described in the sixth embodiment, or may be an apparatus (not shown) having a dedicated unit for photocatalyst irradiation. I do not care.

As the X-ray reflection type mask structure, SiC
A reflective substrate 9 having a multilayer structure of TiO ₂ / Ni and a non-reflective pattern 10 made of W are formed on a substrate made of TiO ₂ / Ni. TiO ₂ is a photocatalyst has been also used as a constituent of the multilayer film, the top layer has a TiO _2. However, since TiO ₂ as a multilayer film is thin, titanium oxide 6 is formed around the mask (outside the exposure area) by resistance heating, EB evaporation, sputtering, or the like, as in the mask of FIG.

Since the mask structure shown in FIG. 13 also has a photocatalyst in the exposure area, the mask can be cleaned using the photocatalyst action not only during X-ray exposure but also in the mask cassette chamber. Furthermore, since the photocatalyst is brought into a conductive state by exposure or irradiation of auxiliary light, adhesion of dust and the like on the mask can be prevented. With such an X-ray exposure apparatus, highly accurate X-ray reduction exposure corresponding to mass production could be performed.
A device such as a semiconductor can be manufactured using the X-ray exposure apparatus in each of the embodiments described above.

[Embodiment of Semiconductor Production System] Next, devices such as semiconductors (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin film magnetic heads) utilizing the above-described exposure apparatus (X-ray exposure apparatus, etc.) , Micromachine, etc.)
An example of the production system will be described. This includes maintenance services such as troubleshooting and periodic maintenance of manufacturing equipment installed in semiconductor manufacturing factories, or software provision.
This is performed using a computer network or the like outside the manufacturing factory.

FIG. 14 shows the whole system cut out from a certain angle. In the figure, reference numeral 101 denotes a vendor that supplies a semiconductor device manufacturing apparatus (apparatus supplier).
Is a business establishment. Examples of manufacturing equipment include semiconductor manufacturing equipment for various processes used in semiconductor manufacturing factories, for example, pre-processing equipment (lithography equipment such as exposure equipment, resist processing equipment, etching equipment, heat treatment equipment, film formation equipment, planarization). Equipment) and post-process equipment (assembly equipment, inspection equipment, etc.). A host management system 1 that provides a maintenance database for manufacturing equipment in the business office 101
08, a plurality of operation terminal computers 110, and a local area network (LAN) 109 connecting these to construct an intranet or the like. The host management system 108 has a gateway for connecting the LAN 109 to the Internet 105, which is an external network of the office, and a security function for restricting external access.

On the other hand, 102 to 104 are manufacturing factories of a semiconductor manufacturer as users of the manufacturing apparatus. The manufacturing factories 102 to 104 may be factories belonging to different manufacturers or factories belonging to the same manufacturer (for example, a factory for a pre-process, a factory for a post-process, etc.). In each of the factories 102 to 104, a plurality of manufacturing apparatuses 106, a local area network (LAN) 111 connecting them to construct an intranet or the like, and a host as a monitoring apparatus for monitoring the operation status of each manufacturing apparatus 106 are provided. A management system 107 is provided. Each factory 1
Host management system 107 provided in the storage system 02 to 104
Has a gateway for connecting the LAN 111 in each factory to the Internet 105 which is an external network of the factory. As a result, the LAN 111 of each factory can access the host management system 108 on the vendor 101 side via the Internet 105, and only the users limited by the security function of the host management system 108 are permitted to access. In particular,
Via the Internet 105, status information indicating the operation status of each manufacturing apparatus 106 (for example, the symptom of the manufacturing apparatus in which a trouble has occurred) is notified from the factory side to the vendor side, and response information corresponding to the notification (for example, (Information for instructing a coping method for the trouble, software and data for coping), and maintenance information such as the latest software and help information can be received from the vendor side. Each factory 1
02-104 and the vendor 101 and the data communication on the LAN 111 in each factory, a communication protocol (TC) generally used on the Internet is used.
P / IP) is used. Instead of using the Internet as an external network outside the factory, it is also possible to use a dedicated line network (such as ISDN) that is not accessible from a third party and has high security. Further, the host management system is not limited to the one provided by the vendor, and a user may construct a database and place it on an external network, and permit access from a plurality of factories of the user to the database.

FIG. 15 is a conceptual diagram showing the entire system according to the present embodiment cut out from a different angle from FIG. In the above example, a plurality of user factories each having a manufacturing device and a management system of a vendor of the manufacturing device are connected via an external network, and the production management of each factory and at least one device are connected via the external network. Data communication of the information of the manufacturing apparatus. On the other hand, in this example, a factory equipped with manufacturing equipment of a plurality of vendors is connected to a management system of each of the plurality of manufacturing equipments via an external network outside the factory, and maintenance information of each manufacturing equipment is stored. It is for data communication. In the figure, reference numeral 201 denotes a manufacturing factory of a manufacturing apparatus user (semiconductor device maker), and a manufacturing line for performing various processes, for example, an exposure apparatus 202, a resist processing apparatus 203, and a film forming apparatus 204 have been introduced. Although FIG. 15 shows only one manufacturing factory 201, a plurality of factories are actually networked in the same manner. Each device in the factory is connected by a LAN 206 to form an intranet or the like, and a host management system 205 manages the operation of the production line. On the other hand, each business establishment of a vendor (equipment supply maker) such as an exposure apparatus maker 210, a resist processing apparatus maker 220, and a film formation apparatus maker 230 has host management systems 211 and 221 for performing remote maintenance of the supplied equipment. , 231 which comprise a maintenance database and an external network gateway as described above. The host management system 205 that manages each device in the user's manufacturing factory and the management systems 211, 221, and 231 of the vendors of each device are connected by the external network 200 as the Internet or a dedicated line network. In this system, if a trouble occurs in any of a series of manufacturing equipment in the manufacturing line, the operation of the manufacturing line is stopped, but remote maintenance is performed from the vendor of the troubled equipment via the Internet 200. As a result, quick response is possible, and downtime of the production line can be minimized.

Each manufacturing apparatus installed in the semiconductor manufacturing factory has a display, a network interface, and a computer for executing network access software and apparatus operation software stored in a storage device. The storage device is a built-in memory, a hard disk, a network file server, or the like. The network access software includes a dedicated or general-purpose web browser, and provides, for example, a user interface having a screen as shown in FIG. 16 on a display. The operator who manages the manufacturing equipment at each factory refers to the screen and refers to the manufacturing equipment model 4.
01, serial number 402, trouble subject 40
3. Information such as date of occurrence 404, degree of urgency 405, symptom 406, coping method 407, progress 408, etc. is input to input items on the screen. The input information is transmitted to the maintenance database via the Internet, and the resulting appropriate maintenance information is returned from the maintenance database and presented on the display. The user interface provided by the web browser further includes a hyperlink function 41 as shown in the figure.
0, 411, 412, allowing the operator to access more detailed information on each item, extract the latest version of software used for manufacturing equipment from the software library provided by the vendor, and provide information for the factory operator. An operation guide (help information) can be pulled out. Here, the maintenance information provided by the maintenance database includes the information on the present invention described above, and the software library also provides the latest software for realizing the present invention.

Next, a manufacturing process of a semiconductor device using the above-described production system will be described. FIG.
Shows the flow of the entire semiconductor device manufacturing process. In step 1 (circuit design), the circuit of the semiconductor device is designed. Step 2 is a process for making a mask on the basis of the circuit pattern design. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer produced in step 4, and an assembly process (dicing, dicing,
Bonding), an assembly process such as a packaging process (chip encapsulation) and the like. In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7). The pre-process and the post-process are performed in separate dedicated factories, and maintenance is performed for each of these factories by the above-described remote maintenance system. Also, between the pre-process factory and the post-process factory,
Information and the like for production management and device maintenance are communicated via the Internet or a dedicated line network.

FIG. 18 shows a detailed flow of the wafer process. Step 11 (oxidation) oxidizes the wafer's surface. Step 12 (CVD) forms an insulating film on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist processing), a photosensitive agent is applied to the wafer.
In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the above-described exposure apparatus (such as an X-ray exposure apparatus). Step 17 (development) develops the exposed wafer. In step 18 (etching), portions other than the developed resist image are removed. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
Since the manufacturing equipment used in each process is maintained by the remote maintenance system described above, troubles can be prevented beforehand, and if troubles occur, quick recovery is possible. Productivity can be improved.

By using the manufacturing method of this embodiment, it is possible to cope with mass production of devices such as highly integrated semiconductors, which were conventionally difficult to manufacture.

As described above, the present invention has been described mainly on the case of manufacturing a semiconductor device by X-ray exposure.
The present invention is not limited to the above embodiments. That is, light other than X-rays (ultraviolet light, vacuum ultraviolet light) is used as long as it is assumed that light in the wavelength region where the photocatalyst functions is used.
An exposure method, an exposure apparatus, and a mask structure on the assumption that is used for exposure light or auxiliary light are also included in the scope of the present invention. That is, it includes exposure using ultraviolet light or vacuum ultraviolet light from a light source such as an excimer laser, transmission or reflection X-ray exposure, and exposure using EB or IB.

Further, titanium oxide is mentioned as a specific example of the photocatalyst, but other photocatalysts such as ZnO, Nb ₂ O ₅ , W
Metal oxides such as O ₃ , SnO ₂ , ZrO ₂ , SrTi
O _3, complex metal oxides such as _{Ni-K 4 Nb 6 O 17} , Cd
Metal sulfides such as S and ZnS, CdSe, GaP, CdT
Metal chalcogenides such as e, MoSe ₂ and WSe ₂ may be used.

[0088]

As described above, the present invention relates to an exposure apparatus for transferring a desired pattern onto a transfer object by exposure using a mask structure having at least a photocatalyst at least in part, and in an exposure apparatus which is always or unexposed. By irradiating light and controlling the humidity, a photocatalyst can act to clean the mask and prevent contamination.

As described above, the number of times of cleaning the mask can be reduced or eliminated, and the life of the mask can be extended. In addition, the occurrence of uneven exposure and a decrease in exposure amount control,
Further, it is possible to prevent a decrease in alignment accuracy due to a decrease in the transmittance of alignment light, and mass production of high-precision printing is enabled. In addition, a pattern is transferred onto a processing substrate by exposure using the exposure apparatus of the present invention, and this is processed,
By forming, high-performance semiconductor devices can be mass-produced.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a main part of an exposure apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a mask structure according to the first embodiment of the present invention.

FIG. 3 is a schematic diagram of a main part of an exposure apparatus according to a second embodiment of the present invention.

FIG. 4 is a schematic view of a main part of an exposure apparatus according to a third embodiment of the present invention.

FIG. 5 is a schematic diagram of a main part showing a modification of the exposure apparatus of FIG. 4;

FIG. 6 is a sectional view of a mask structure according to a third embodiment of the present invention.

FIG. 7 is a sectional view of another mask structure according to the third embodiment of the present invention.

FIG. 8 is a schematic diagram of a main part of an exposure apparatus according to a fourth embodiment of the present invention.

9 is a view of the exposure apparatus of FIG. 8 as viewed from above.

FIG. 10 is a sectional view of a mask structure according to a fifth embodiment of the present invention.

FIG. 11 is a schematic diagram of a main part of an exposure apparatus according to a sixth embodiment of the present invention.

FIG. 12 is a sectional view of a mask structure according to a sixth embodiment of the present invention.

FIG. 13 is a sectional view of a mask structure according to a seventh embodiment of the present invention.

FIG. 14 is a conceptual view of a semiconductor device production system including an exposure apparatus according to one embodiment of the present invention, as viewed from a certain angle.

FIG. 15 is a conceptual diagram of a semiconductor device production system including an exposure apparatus according to one embodiment of the present invention, as viewed from another angle.

FIG. 16 is a diagram showing a specific example of a user interface in a semiconductor device production system including an exposure apparatus according to one embodiment of the present invention.

FIG. 17 is a diagram illustrating a flow of a device manufacturing process by the exposure apparatus according to one embodiment of the present invention.

FIG. 18 is a diagram illustrating a wafer process by the exposure apparatus according to one embodiment of the present invention.

FIG. 19 is an explanatory view showing a reaction example of a chemically amplified resist according to a conventional example.

[Explanation of symbols]

1: holding frame, 2: supporting film (X-ray transmitting film), 3: X-ray absorber, 4: reinforcing material, 5: adhesive, 6: photocatalyst (titanium oxide), 7: conductive film, 8: substrate, 9: reflective substrate, 10: non-reflective pattern, 11: SR radiation source, 12: synchrotron radiation, 13: convex mirror, 14: shutter, 15:
X-ray mask, 16, 37: wafer, 17, 35: mask stage, 18: wafer chuck, 19, 38: wafer stage, 20: alignment unit, 21, 41:
Auxiliary light source, 22: exposure chamber, 23, 44: moisture meter, 24,
43: steam supply device, 25, 45: mass flow, 2
6: separate room, 27, 42: exhaust port, 28: mask cassette room, 31: undulator light source, 32: X-ray beam, 3
3: Total reflection mirror (illumination optical system), 34: Reflective mask, 36: Projection optical system, 39: Vacuum container, 40: Mask cassette room, 101: Vendor office, 102, 10
3,104: Manufacturing plant, 105: Internet, 10
6: manufacturing equipment, 107: factory host management system, 1
08: vendor-side host management system; 109: vendor-side local area network (LAN); 110:
Operation terminal computer, 111: factory local area network (LAN), 200: external network,
201: manufacturing apparatus User's manufacturing factory, 202: exposure apparatus, 203: resist processing apparatus, 204: film forming apparatus, 205: factory host management system, 206: factory local area network (LAN), 210: exposure apparatus Maker, 211: host management system of the business of the exposure apparatus maker, 220: resist processing apparatus maker, 2
21: Host management system of a business site of a resist processing apparatus maker, 230: Film forming apparatus maker, 231: Host management system of a business site of a film forming apparatus maker, 401: Model of manufacturing apparatus, 402: Serial number, 403: Trouble Subject, 404: date of occurrence, 405: urgency, 406: symptom, 407: remedy, 408: progress, 410, 411
412: Hyperlink function.

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat ゛ (Reference) H01L 21/30 502G 531A 531M F-term (Reference) 2H095 BA07 BA10 BA12 BB29 BB30 BB31 BE12 2H097 BA02 BA04 BA06 CA13 CA15 JA02 LA10 LA15 LA17 LA20 5F046 AA22 AA28 DA06 DD06 GA07 GA14 GA20 GD01 GD03 GD07 GD10

Claims (25)

[Claims] 1. An exposure apparatus for transferring a desired pattern formed on an original to a transfer target by exposure, wherein a mask structure constituting the original includes a substance having a photocatalytic action, and an exposure chamber in the exposure apparatus is provided. And / or an exposure apparatus having means for managing humidity in a room separate from the exposure chamber in the exposure apparatus. 2. The apparatus according to claim 1, wherein the exposure apparatus includes a unit for irradiating the mask structure with auxiliary light.
3. The exposure apparatus according to claim 1. 3. The exposure apparatus according to claim 1, wherein the exposure apparatus has a mask cassette chamber as the separate chamber for storing the original, and the humidity of the mask cassette chamber is controlled. apparatus. 4. The exposure apparatus according to claim 3, wherein the exposure apparatus includes means for irradiating the mask structure with auxiliary light in the exposure chamber and / or the separate chamber. 5. The exposure apparatus according to claim 1, wherein the humidity managed in the exposure apparatus is 4% or more and 80% or less. 6. The apparatus according to claim 1, wherein the auxiliary light is one of ultraviolet light, vacuum ultraviolet light, and X-ray.
5. The exposure apparatus according to any one of 5. 7. The exposure apparatus according to claim 1, wherein the exposure apparatus has an exhaust port for exhausting decomposition products of the deposits attached to the mask structure. 8. The exposure apparatus according to claim 1, wherein the exposure apparatus has a partition provided between the exposure chamber and the separate chamber. 9. The exposure apparatus according to claim 1, wherein the exposure light used in the exposure apparatus is X-ray, EUV, or excimer laser light. 10. A mask structure used for the exposure apparatus according to claim 1, wherein metal ions are implanted into the substance having the action of the photocatalyst. A mask structure. 11. The mask structure according to claim 10, wherein the metal injected into the substance having a photocatalytic action is Cr or V. 12. Using the exposure apparatus according to any one of claims 1 to 9, performing exposure for transferring a desired pattern formed on the original plate to the transfer target, and further performing the exposure on the structure. An exposure method comprising irradiating auxiliary light. 13. A method of exposing a desired pattern formed on the master to the transfer object, when the master is not used, or when exposure light or alignment light used for alignment of the transfer object with the master is used. When transmittance deteriorates,
13. The exposure method according to claim 12, wherein the structure is irradiated with the auxiliary light in the exposure room and / or the separate room where the humidity is controlled. 14. The exposure method according to claim 12, wherein, when a desired pattern is transferred to the transfer object by exposure, a chemically amplified resist is used for the transfer object. 15. When the transmittance of the exposure light or the alignment light is degraded due to a substance attached to the structure, the exposure is interrupted, and the structure is irradiated with the auxiliary light. The exposure method according to any one of claims 12 to 14, wherein whether or not the exposure is interrupted is determined based on an accuracy required for the transfer object. 16. The exposure method according to claim 12, wherein the exposure light used in the exposure method is X-ray, EUV, or excimer laser light. 17. Using the exposure apparatus according to any one of claims 1 to 9, transferring a desired pattern formed on the original plate to the transfer object by exposure, and processing the transfer object.
A semiconductor device characterized by being formed and manufactured. 18. A device manufacturing method for manufacturing a device by transferring a desired pattern formed on an original to an object by exposure, and processing and forming the object to form a device. A device manufacturing method using the exposure apparatus according to any one of claims 9 to 10. 19. A process for installing a manufacturing apparatus group for various processes including the exposure apparatus according to claim 1 in a semiconductor manufacturing factory, and a semiconductor device by a plurality of processes using the manufacturing apparatus group. Manufacturing a semiconductor device. 20. A step of connecting the manufacturing equipment group via a local area network, and data communication between at least one of the manufacturing equipment group between the local area network and an external network outside the semiconductor manufacturing plant. 20. The method according to claim 19, further comprising the step of: 21. A semiconductor manufacturing plant different from the semiconductor manufacturing plant, wherein a database provided by a vendor or a user of the exposure apparatus is accessed via the external network to obtain maintenance information of the manufacturing apparatus by data communication. 21. The production control is performed by performing data communication with the device via the external network.
3. The method for manufacturing a semiconductor device according to item 1. 22. A manufacturing apparatus group for various processes including the exposure apparatus according to claim 1, a local area network connecting the manufacturing apparatus group, and an external device outside the factory from the local area network. A semiconductor manufacturing plant, comprising: a gateway enabling access to a network; and enabling data communication of information on at least one of the manufacturing apparatus groups. 23. The semiconductor device according to claim 1, which is installed in a semiconductor manufacturing plant.
A method for maintaining an exposure apparatus according to any one of claims 1 to 9,
A step of providing a maintenance database connected to an external network of a semiconductor manufacturing plant by a vendor or a user of the exposure apparatus, and a step of permitting access to the maintenance database from the inside of the semiconductor manufacturing plant via the external network. Transmitting the maintenance information stored in the maintenance database to the semiconductor manufacturing factory via the external network. 24. The exposure apparatus according to claim 1, further comprising a display, a network interface, and a computer that executes network software, and stores maintenance information of the exposure apparatus via a computer network. An exposure apparatus, which enables data communication. 25. The network software,
Provided on the display is a user interface for accessing a maintenance database provided by a vendor or a user of the exposure apparatus connected to an external network of a factory where the exposure apparatus is installed, and from the database via the external network. The exposure apparatus according to claim 24, wherein information can be obtained.