JP2000284468A - Mask structure, exposure method and exposure device using this mask structure, semiconductor device manufactured by using this mask structure and production of semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make the life of a mask longer by preventing the contamination of a mask surface by deposits, dust, etc., and decreasing or eliminating the number of times of washing. SOLUTION: The X-ray mask structure consists of a holding frame 1 which consists of Si having a thickness of 0.625 mm and SiC of 2.0 μm in thickness which constitutes an X-ray permeable supporting film 2 and is deposited by CVD. A thin film of titanium oxide 6 is formed at a thickness of 200 nm as a photocatalyst on the supporting film 2 by resistance heating vapor deposition or EB vapor deposition. The deposition conditions for the titanium oxide 6 are so regulated that a crystal type turns to an anatase type. The mask structure further comprises an X-ray absorber 3 consisting of Ta formed by sputtering and a reinforcing body 4 consisting of 'Pyrex (R)' adhered to the holding frame 1 by anode joining. Further, the opposite side of the mask surface is provided with a pellicle 8 to prevent the direct adhesion of dust, etc., on the mask, by which the number of washing times of the mask is decreased or the need for washing the mask itself is eliminated and the longer life of the mask may be achieved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask structure used for forming a desired pattern on a substrate such as a semiconductor substrate, an exposure method for forming the above-mentioned pattern using the mask structure, and an exposure method. The present invention relates to an apparatus, a semiconductor device manufactured using this mask structure, and a method for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In the manufacture of semiconductor devices such as semiconductor integrated circuits, micromachines, thin-film magnetic heads, and other devices on which fine patterns are formed, light (visible light or ultraviolet light) ) Or X-rays to form a desired pattern on the substrate. For example, in the case of a semiconductor integrated circuit, a mask corresponding to a desired circuit pattern is prepared, and this mask is prepared for a semiconductor substrate having a resist formed on the surface, and a semiconductor substrate having a resist formed on the surface. The mask is irradiated with light or X-rays through this mask, the resist is selectively exposed, and a circuit pattern is transferred to the resist. A circuit will be formed. Hereinafter, the formation of a device having a fine pattern as described above will be described using the case of manufacturing a semiconductor integrated circuit as an example.

[0003] In recent years, as the density and speed of semiconductor integrated circuits have increased, the pattern line width of the integrated circuits has been reduced, and there has been a demand for higher performance semiconductor manufacturing methods. For this reason, a stepper using an exposure light source with a shorter wavelength, such as a KrF laser (248 nm), an ArF laser (193 nm), or an X-ray region (0.2 to 15 nm), has been developed as a printing apparatus (exposure apparatus). It is getting. Further, a chemically amplified resist using an acid catalyst has come to be used as a resist used when transferring a desired pattern to a transfer target.

[0004]

As the line width of a desired pattern becomes finer, it becomes very difficult to take measures against dust and the like. In addition to the strict size and number restrictions on ordinary garbage, the sensitivity of processes to chemical substances has also increased, and chemical contamination has become a problem in clean rooms where semiconductor integrated circuits are manufactured. . These are the decomposition products of the resist,
These include volatile substances generated during the process of developing and cleaning the resist, and volatile substances caused by facilities such as adhesives and wall materials.

In such a chemical environment, if exposure is performed for a long time using light of a short wavelength such as far ultraviolet light or X-ray,
Due to the contamination of the mask surface, that is, the generation of deposits, light transmittance, reflectance, scattering, and the like on the mask change.
Especially when a chemically amplified resist is used as the resist,
Acid generators or acids and decomposed substances evaporate during or after exposure, accelerating contamination of the mask.

FIG. 11 shows one reaction example of a chemically amplified resist. T- contained in the resist as a dissolution inhibitor
Boc (tertiary-butoxy carbo)
nyl) groups decompose to form volatile butenes.

Further, in the X-ray projection exposure, the transferred object and the mask are exposed with a gap of several tens μm or less, so that contamination of the mask is a serious problem. These deposits are not uniform in shape and composition but tend to be more present depending on the environment, but it is not clear. It is presumed that this is not a simple photochemical reaction but that decomposition, recombination, multi-order reaction, deposition, crystallization, and the like are acting in a complicated manner. When such deposits are generated, it is conceivable to remove them by washing. However, especially in the case of an X-ray mask, etc., since the shape of the absorber has a high aspect, washing is very difficult and cannot be removed by washing. Garbage is also generated.
In addition, since the support film is a thin film, the strength is weak, and it is necessary to reduce the number of times of washing.

An object of the present invention is to provide a mask structure which can reduce the number of times of cleaning of a mask or eliminate the need for cleaning itself by preventing adhesion and deposition of contamination on the mask surface, and can achieve a longer life of the mask. An object of the present invention is to provide an exposure method, an exposure apparatus, a semiconductor device, and a semiconductor device manufacturing method using such a mask structure.

[0009]

Means for Solving the Problems The present inventors have conducted trial and error studies as a measure for preventing adhesion and deposition to the mask surface, and as a result, have formed a thin film of photocatalyst on the mask surface (transfer member side). It has been found that the above problem can be solved by providing a pellicle on the opposite side of the mask surface.
A representative example of the photocatalyst is titanium oxide.
As the film forming method, a method of forming a titanium oxide such as an alkyl titanate by coating in advance and then heating the film to form a titanium oxide by oxidizing titanium can be applied.

[0010]

The photocatalyst functions as a catalyst when irradiated with short-wavelength light such as ultraviolet rays or X-rays, and has the action of chemically decomposing various substances. In addition, it exerts its effect as an optical semiconductor,
It becomes conductive by the irradiation of light, and exhibits an antistatic effect, thereby exhibiting a contaminant adhesion preventing effect.

That is, the photocatalyst is decomposed and the antistatic effect prevents contamination of the mask surface (to be transferred).
By providing the pellicle on the opposite side of the mask surface, the number of times of cleaning of the mask can be reduced or eliminated, and the life of the mask can be extended.

Further, the present invention provides an exposure method and an exposure apparatus for transferring a desired pattern onto an object by exposure using a mask structure according to the present invention. Mass production of baking is possible. In addition, a desired pattern is transferred onto a processing substrate by exposure using the mask structure of the present invention, and this is processed.
By forming, high-performance semiconductor devices can be mass-produced.

[0013]

Next, the present invention will be described more specifically with reference to the drawings. Embodiment 1 FIG. 1 is a sectional view of an X-ray mask structure according to a first embodiment of the present invention. The X-ray mask structure
A holding frame 1 made of 0.625 mm thick Si and a 2.0 μm thick SiC film formed by CVD to become an X-ray permeable support film 2 are formed on the support film 2 by resistance heating evaporation or EB. A thin film of titanium oxide 6 is used as a photocatalyst by evaporation.
It is formed to a thickness of nm. As the titanium oxide 6,
The film forming conditions are adjusted so that the crystal form becomes an anatase type. The mask structure shown in FIG. 1 further includes an X-ray absorber 3 made of Ta formed by sputtering, and a reinforcing body 4 made of Pyrex bonded to the holding frame 1 by anodic bonding.

A pellicle 8 attached to a frame 7 is attached to the side surface of the reinforcing member 4 with an easily removable adhesive 10 so that the distance from the supporting film 2 is 5 mm. The frame 7 is made of Al and has a hole 9 for pressure adjustment. The hole 9 is provided with a filter (not shown) for preventing dust from entering. The pellicle 8 is made of 0.8 μm thick polyimide.

As described above, a thin film of titanium oxide 6 is formed on the mask surface (transfer member side), and the attached matter is decomposed by the photocatalytic action. To explain the function in detail, titanium oxide generates electrons and holes by absorbing light energy, and decomposes deposits by a redox action. Therefore, in this embodiment, not only the deposits on the titanium oxide surface are decomposed, but also the electrons generated from the titanium oxide are transmitted to the X-ray absorber, which is a conductor, and the deposits that have arrived on the absorber surface due to the reduction action are also decomposed. it can. This can prevent recombination of electrons and holes once generated, which leads to an increase in efficiency.

Further, a pellicle 8 is provided on the opposite side of the mask surface to prevent dust or the like from directly adhering to the mask, thereby reducing the number of times of cleaning of the mask or making cleaning itself unnecessary, and extending the life of the mask. Can be achieved.

Titanium oxide not only acts as a photocatalyst at the time of X-ray exposure, but also emits auxiliary light of ultraviolet light, vacuum ultraviolet light, or X-ray within a range that does not affect the object to be transferred (wafer). Decomposition as a photocatalyst is caused by irradiation with black light, laser, laser plasma X-ray, or the like. In addition, auxiliary light can be applied in the mask cassette during storage. In addition, titanium oxide can continue its operation even in normal room light (fluorescent lamp or the like). Further, since the titanium oxide is brought into a conductive state by exposure or irradiation of auxiliary light, adhesion of dust and the like on the mask can be prevented.

By using the pellicle in combination with the decomposition function and antistatic function of titanium oxide as described above, an X-ray corresponding to mass production of X-ray exposure in which a transferred object and a mask are exposed with a gap of several tens μm or less. A mask structure could be supplied.

Embodiment 2 FIG. 2 is a sectional view of an X-ray mask structure according to a second embodiment of the present invention. The X-ray mask structure shown in FIG. 2 has a holding frame 1 made of 2 mmt Si, X
An X-ray absorber 3 made of 2.0 μm C (diamond) and W, which is formed by CVD to become a line-permeable support film 2, and made of Pyrex glass adhered to the holding frame 1 by anodic bonding. It is composed of a reinforcing member 4. For the pellicle 8, polyphenylene sulfide, which is a conductive polymer and is a radiation-resistant polymer, was used.

Titanium oxide 6, which is a photocatalyst, was formed to a thickness of 1000 nm by applying and firing an alkyl titanate only on the peripheral portion (outside the exposure region) of the mask. Decomposes as a photocatalyst by applying an auxiliary light of ultraviolet, vacuum ultraviolet, or X-ray using a mercury lamp, black light, laser, laser plasma X-ray, etc. within a range that does not affect the transferred object (wafer). Wake up. In addition, auxiliary light can be applied in the mask cassette during storage. Titanium oxide can continue to function as a photocatalyst even in ordinary room lighting (fluorescent lamps and the like). By forming the layer outside the exposure region, the film thickness can be set to a necessary and sufficient amount for the reaction without fear of attenuation of X-rays due to absorption of titanium oxide and change of titanium oxide due to X-rays. In this embodiment, not only the deposits on the titanium oxide surface are decomposed, but also the electrons generated from the titanium oxide are transmitted to the X-ray transmitting film and the absorber, which are conductors, and are attached to the permeable film and the absorber surface by a reducing action. Kimonos can also be disassembled. This can prevent recombination of electrons and holes once generated, which leads to an increase in efficiency. As described above, in this embodiment, C (diamond), which is a conductor, is used for the permeable film. However, when the conductivity of the permeable film is insufficient, the conductive film having a thickness that has little effect on the X-ray transmittance and the like is used. Preferably, a film is formed. Number n
noble metal (Au, Pt, etc.) or ITO with thickness less than m
And the like. By dissolving and preventing the titanium oxide formed on the transfer object side of the mask surface and providing a pellicle on the opposite side of the mask surface, it is possible to prevent contamination of the mask and reduce or eliminate the number of times of cleaning of the mask. As a result, the life of the mask can be extended, and an X-ray mask structure suitable for mass production can be supplied.

Embodiment 3 FIG. 3 is a sectional view of an X-ray mask structure according to a third embodiment of the present invention. The X-ray mask structure shown in FIG.
SiC formed by CVD to be a line-permeable support film 2
2.0 μm, X made of Ta formed by sputtering
It comprises a wire absorber 3 and a reinforcing member 4 made of Pyrex bonded to the holding frame 1 by anodic bonding.
After the pattern formation of the X-ray absorber 3, titanium oxide 6 is formed to a thickness of 200 nm as a photocatalyst by vapor deposition or sputtering. As the pellicle 8, the organic film used in Examples 1 and 2 or SiC which is the same material as the support film 2 may be used.

Providing a pellicle on the opposite side of the mask surface from the decomposition and antistatic effects of titanium oxide prevents contamination of the mask, and reduces or eliminates the number of times of cleaning of the mask. The service life can be extended and an X-ray mask structure suitable for mass production can be supplied.

Embodiment 4 FIG. 4 is a sectional view of an X-ray mask structure according to a fourth embodiment of the present invention. As an X-ray mask structure, a holding frame 1 made of 2 mmt of Si and a SiN film formed by CVD to become an X-ray transparent support film 2
2.0 μm, WX-ray absorber 3 formed by sputtering, and Si bonded to holding frame 1 with adhesive 5
Although it is composed of a reinforcing member 4 made of C, a Ti film 6 ′ is used to improve the adhesion of W as the absorber 3 to the support film. After patterning W, Ti is oxidized by exposing it to O ₂ plasma, and titanium oxide 6 is used as a photocatalyst.
Is formed to a thickness of 100 nm. As the means for oxidation, thermal oxidation, implantation of oxygen ions, or the like may be used. Adhesion improving film T
Since the film can be formed only by changing the peeling step i to the oxidation step, the process can be simplified. The pellicle 8 is made of S, which is the same material as the support film 2 in the organic film.
iN may be used.

By providing a pellicle on the side opposite to the mask surface, which is capable of decomposing and preventing the titanium oxide, the contamination of the mask can be prevented, and the number of times of cleaning of the mask can be reduced or eliminated. Thus, an X-ray mask structure suitable for mass production could be supplied.

Embodiment 5 FIG. 5 is a sectional view of an X-ray mask structure according to a fifth embodiment of the present invention. The X-ray mask structure is made in the same configuration as that of the third embodiment, but has a directionality by using a mesh when forming a titanium oxide 6 as a photocatalyst by sputtering. Then, since the titanium oxide film is not formed on the side surface of the absorber 3, it is easy to control the line width of the absorber.

[Embodiment 6] FIG. 6 is a sectional view of an X-ray mask structure according to a sixth embodiment of the present invention. As the X-ray mask structure, a holding frame 1 made of 5 mmt of Si, a SiN film formed by CVD to be an X-ray transparent support film 2,
The X-ray absorber 3 is made of 2.0 μm (Pt is formed as a conductive film with a thickness of several nm) and Au formed by plating. In this embodiment, the reinforcing member 4 is not used. Therefore, the pellicle is directly bonded to the holding frame 1. Before removing the resist used when forming the absorber 3, the titanium oxide 6 which is a photocatalyst is formed, and the resist is peeled off to form only on the absorber 2 in the exposed area. In addition, as in the second embodiment, it is also formed in the peripheral portion (outside the exposure area). X due to absorption of titanium oxide
It is possible to prevent a decrease in contrast due to line attenuation.

[Embodiment 7] Next, an embodiment of an X-ray exposure apparatus for manufacturing a micro device (semiconductor device, thin-film magnetic head, micromachine, etc.) using the mask described in the above embodiments 1 to 6 will be described.

FIG. 7 is a schematic view of an essential part of an exposure apparatus using an X-ray mask according to the present invention, and FIG. 8 is a view of the X-ray exposure apparatus as viewed from above. The X-ray exposure apparatus uses synchrotron radiation (SR) light as an X-ray light source.

In the figure, A is an SR radiation source (storage ring), and the synchrotron radiation light B in the form of a sheet beam emitted from the SR radiation source A spreads in a beam having a uniform light intensity in the lateral direction. It has a sheet beam shape that has almost no spread in the vertical direction. The radiated light B is reflected by a cylindrical mirror C and expanded in the vertical direction, whereby a beam having a substantially square cross section is obtained, thereby obtaining a square exposure area. The expanded radiation light B is adjusted by a shutter D so that the exposure amount in the irradiation area becomes uniform, and the radiation light B passing through the shutter D is irradiated with an X-ray mask E.
It is led to. The X-ray mask E is manufactured by the method of the first to sixth embodiments. The X-ray mask E is attracted to the mask stage G and is held at a position facing the wafer F. Note that no pellicle is displayed in FIGS.

F is a wafer to be exposed. The wafer F is held by a wafer chuck H. The wafer chuck H is mounted on the wafer stage I. The wafer stage I is moved to position the wafer F.

The alignment unit J has an optical system for detecting a positioning alignment mark provided on each of the mask E and the wafer F, and a calculation unit for calculating a deviation between the two. By using the X-ray mask E of the present invention, highly accurate alignment can be performed.

After the alignment of the mask E and the wafer F according to the present invention, the pattern formed on the X-ray mask E is exposed and transferred onto the wafer F by a step-and-repeat method or a scanning method. An auxiliary light source K of any one of ultraviolet light, vacuum ultraviolet light, and X-ray is provided near the mask stage G, and the auxiliary light from the auxiliary light source K is applied to the X-ray mask E within a range that does not affect the wafer F. Can be irradiated. As the auxiliary light source K, specifically, a mercury lamp, black light, laser, laser plasma X-ray, or the like is used.

By configuring the X-ray exposure apparatus in this manner, the mask surface (to be transferred) can be exposed at the time of exposure to SR light B (when titanium oxide is formed as a photocatalyst in the exposed area) or at the time of irradiation with auxiliary light. The decomposition action and the antistatic action by the action of titanium oxide which is the photocatalyst in (2) are promoted, and the adhesion of dust to the mask together with the pellicle provided on the opposite side can be prevented.

Further, in this X-ray exposure apparatus, as shown in FIG. 8, an auxiliary light source K is also provided in the mask cassette chamber L. Even during storage of the X-ray mask E, it is possible to cause the adhering substance to be decomposed by the titanium oxide as a photocatalyst, and the decomposition product can be recovered from the exhaust port M of the mask cassette chamber L. With this X-ray exposure apparatus, highly accurate X-ray exposure corresponding to mass production could be performed.

[Embodiment 8] Next, an embodiment of a method of manufacturing a semiconductor device (semiconductor element) using the above-described exposure apparatus will be described. FIG. 9 is a flowchart of manufacturing a semiconductor device (a semiconductor chip such as an IC or an LSI, or a liquid crystal panel or a CCD). In this embodiment, step 1
In (circuit design), a circuit of a semiconductor device is designed. In step 2 (mask production), an X-ray mask on which a designed circuit pattern is formed is produced by using the method of the first to sixth embodiments. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is referred to as a preprocess, and actual circuits are formed on the wafer by X-ray lithography using the prepared mask and wafer.

The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip using the wafer manufactured in step 4, and includes an assembly process (dicing and bonding) and a packaging process (chip encapsulation). And the like.

In step 6 (inspection), inspections such as an operation confirmation test and a durability test of the semiconductor device manufactured in step 5 are performed. Through these steps, a semiconductor device is completed and shipped (step 7).

FIG. 10 is a detailed flowchart of the wafer process in step 4 described above. First, step 11
In (oxidation), the surface of the wafer is oxidized. Step 12
In (CVD), an insulating film is formed on the wafer surface. Step 13 (electrode formation) forms electrodes on the wafer by vapor deposition. Step 14 (ion implantation) implants ions into the wafer. In step 15 (resist processing), a chemically amplified resist is applied to the wafer.

In step 16 (exposure), the circuit pattern of the mask is printed and exposed on the wafer by the X-ray exposure apparatus described in the seventh embodiment. The wafer is loaded, the wafer is opposed to the mask, the misalignment is detected by the alignment unit, and the wafer stage is driven to align the two. If they match, exposure is performed. After the exposure is completed, the wafer moves to the next shot stepwise, and the operations following the alignment are repeated.

In step 17 (development), the exposed wafer is developed. Step 18 (etching) removes portions other than the developed resist. In step 19 (resist stripping), unnecessary resist after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
By using the manufacturing method of this embodiment, it is possible to cope with mass production of a highly integrated semiconductor device which has been conventionally difficult to manufacture.

As described above, the embodiments of the present invention have been described centering on the case where a semiconductor device is manufactured by X-ray exposure, but the present invention is not limited to these.
An exposure method, an exposure apparatus, and a mask on the premise that light other than X-rays (ultraviolet light, vacuum ultraviolet light) is used as exposure light or auxiliary light as long as light in a wavelength region in which a photocatalyst functions is used. The structure is also included in the scope of the present invention. That is, exposure using ultraviolet light or vacuum ultraviolet light from a light source such as an excimer laser, transmission or reflection X-ray exposure, and exposure using EB (electron beam) or IB (ion beam) are also included. Also, titanium oxide has been mentioned as a specific example of the photocatalyst, but other photocatalysts,
For example, ZnO, Nb ₂ O ₅ , WO ₃ , SnO ₂ , ZrO
₂ , metal oxides such as SrTiO ₃ , KTaO ₃ , N
composite metal oxides such as _{i-K 4 Nb 6 O 17} , CdS, Z
metal sulfides such as nS, CdSe, GaP, CdTe,
Metal chalcogenides such as MoSe ₂ and WSe ₂ may be used.

[0042]

As described above, the photocatalyst is provided on the mask surface (transfer object side), and the pellicle is formed on the opposite side of the mask surface. , Can prevent contamination of the mask surface, reduce or eliminate the number of cleaning,
The life of the mask can be extended.

Further, the exposure method and the exposure apparatus, which are characterized in that a pattern is transferred onto a transfer object by exposure using the mask structure of the present invention, enable mass production of printing with high precision. Further, by transferring a pattern onto a processing substrate by exposure using the mask structure of the present invention, and processing and forming the pattern, mass production of a high-performance semiconductor device becomes possible.

[Brief description of the drawings]

FIG. 1 is a sectional view of a mask structure according to a first embodiment of the present invention.

FIG. 2 is a sectional view of a mask structure according to a second embodiment of the present invention.

FIG. 3 is a sectional view of a mask structure according to a third embodiment of the present invention.

FIG. 4 is a sectional view of a mask structure according to a fourth embodiment of the present invention.

FIG. 5 is a sectional view of a mask structure according to a fifth embodiment of the present invention.

FIG. 6 is a sectional view of a mask structure according to a sixth embodiment of the present invention.

FIG. 7 is a schematic view of an exposure apparatus using the mask structure of the present invention.

8 is a view of the exposure apparatus of FIG. 7 as viewed from above.

FIG. 9 is a manufacturing flow of a semiconductor device manufactured by an exposure apparatus using the mask structure of the present invention.

FIG. 10 is a detailed flow of the wafer process in FIG. 9;

FIG. 11 is an explanatory view showing a reaction example of a chemically amplified resist.

[Explanation of symbols]

1: holding frame, 2: supporting film (X-ray transmitting film), 3: X-ray absorber, 4: reinforcing material, 5: adhesive, 6: photocatalyst (titanium oxide), 7: frame pellicle, 8: pellicle , 9: hole, 1
0: adhesive, A: SR radiation source, B: synchrotron radiation, C: convex mirror, D: shutter, E: X-ray mask,
F: wafer, G: mask stage, H: wafer chuck, I: wafer stage, J: alignment unit,
K: auxiliary light source, L: mask cassette chamber, M: exhaust port.

 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Shinya Ogura 3-30-2 Shimomaruko, Ota-ku, Tokyo F-term in Canon Inc. (reference) 2H095 BA10 BB30 BC24 BC26 BC39 5F046 AA25 CB17 DA29 GA04 GA20 GD03 GD04 GD20

Claims (14)

[Claims] 1. A mask used for exposing a desired pattern onto a substrate, wherein the mask has a photocatalyst on the surface of the transfer object side, and a pellicle is provided on the opposite side of the transfer object side surface of the mask. A mask structure characterized by the above-mentioned. 2. The mask structure according to claim 1, wherein the mask is a transmission type mask. 3. The mask structure according to claim 1, wherein a photocatalyst is provided on a portion of the mask other than a portion irradiated with light used for exposure. 4. The method according to claim 1, which is used for exposure using X-rays.
4. The mask structure according to any one of Items 1 to 3. 5. An exposure method using the mask structure according to claim 1 to transfer a desired pattern onto a transfer target by exposure. 6. The exposure method according to claim 5, wherein a chemically amplified resist is used when a desired pattern is transferred to the transfer target body by exposure. 7. The exposure method according to claim 5, wherein the exposure light used is an X-ray. 8. An exposure apparatus for transferring a desired pattern onto an object to be transferred by exposure, according to claim 1.
An exposure apparatus using the mask structure according to any one of the first to third aspects. 9. The exposure apparatus according to claim 8, further comprising an auxiliary light source for irradiating the mask structure with auxiliary light within a range that does not affect the transfer target. 10. A mask cassette chamber for storing the mask structure when the object to be transferred is not exposed to light, and auxiliary light is irradiated to the mask structure in the mask cassette chamber within a range that does not affect the object to be transferred. The exposure apparatus according to claim 8, further comprising: an auxiliary light source that performs the operation. 11. The method according to claim 11, wherein the auxiliary light source is an ultraviolet ray,
11. A method selected from X-rays.
3. The exposure apparatus according to claim 1. 12. The exposure light to be used is an X-ray.
12. The exposure apparatus according to item 11. 13. A semiconductor device according to claim 1, wherein
3. Using the mask structure according to any one of (3), a desired pattern is transferred to the transfer target body by exposure, and processed.
A semiconductor device characterized by being formed and manufactured. 14. A semiconductor device manufacturing method for manufacturing a semiconductor device by transferring a desired pattern onto an object to be transferred by exposure, and processing and forming the desired pattern. A method for manufacturing a semiconductor device, comprising using the mask structure according to (1).